1345931 九、發明說明： 本申請案主張對2006年2月21日提出、標題為“具有前 置脈衝之雷射生成式電漿極端紫外線光源”、代理人案號 2005-0085-01的美國專利申請案第u/358,988號之優先權， 5其係2005年2月25日提出、標題為“用於極端紫外線電漿源 目標傳送之方法與裝置”、代理人案號2004-0008-01的同時 等待之美國專利申請案序號第11/067，124號的部分連續申 請案，其整個内容係據此以引用的方式併入本文中。 2006年2月21日提出之美國專利申請案係亦2005年6月 10 29日提出、標題為“LPP極端紫外線電漿源材料目標傳送系 統”、代理人案號2005-0003-01的同時等待之美國專利申請 案序號第11/174,443號的部分連續申請案，其整個内容係據 此以引用的方式併入本文中。 本申猜案係亦有關同時一併提出、代理人案號 15 2005-0102-01的同時等待之美國非臨時專利申請案、標題為 ‘‘用於極端紫外線光源之原材料分配器”，其整個内容係據 此以引用的方式併入本文中。 本申請案係亦有關同時一併提出、代理人案號 2005- 0081-01的同時等待之美國非臨時專利申請案、標題為 20 “雷射生成式電聚極端紫外線光源”’其整個内容係據此以 引用的方式併入本文中。 本申請案係亦有關同時一併提出、代理人案號 2006- 0010-01的同時等待之美國臨時專利申請案、標題為 “極端紫外線光源”，其整個内容係據此以引用的方式併入 5 1345931 本文中。 【發明所屬之^技術領城】 發明領域 本發明有關極端紫外線(“EUV”)光源，其例如在大約50 5 奈米之波長及以下自一由原材料所建立之電漿提供EUV光 線，並將該光線及集中及引導至一焦點，供在該EUV光源 室外側之利用，例如用於半導體積體電路製造之微影術。 t Λ. 3 發明背景 10 極端紫外線(“EUV”)光線、例如具有約50奈米或更少之 波長的電磁輻射（有時亦稱為軟X-射線），且包含在大約13.5 奈米波長之光線，能夠被用在微影製程中，以於基板、例 如矽晶圓中產生非常小之部件。 產生EUV光線之方法包含、但不須限於將—材料轉換 15 成一電漿狀態，該電漿狀態具有一元素，例如氙、鋰、錫， 且於該EUV範圍中具有一發射譜線。於一此種方法中，通 常稱為雷射生成式電漿(“LPP”），該所需之電漿可藉著以一 雷射光束照射諸如材料之點滴、液流或凝塊的目標材料所 產生，該材料具有所需之線放射元素。至今為止，已揭示 20 諸系統，其中每一點滴係藉著一分開之雷射脈衝連續地照 射，以由每一點滴形成一電漿。亦已揭示諸系統，其中於 藉著一電漿-產生脈衝（例如主要雷射脈衝）充分照射，以由 該前置脈衝原材料產生EUV之前，每一點滴係藉著—分開 之前置脈衝連續地照明、例如光線脈衝(每一點滴一前置脈衝）。 6 1345931 當作範例，對於錫及鋰原材料，該原材料可在其個別 之熔點以上加熱，且強迫經過一孔口，以產生一點滴。然 而，此型式之未調節喷射，典型產生一隨後分成點滴而非 混亂之液流。該結果大致上係點滴尺寸中之一大變化，及 5 沿著該點滴路徑與在一正交於該點滴路徑的平面兩者在點 滴的位置穩定性上之不良控制。 如此，用於如上面所述每點滴組合之單一光線脈衝（未 包括前置脈衝），其可為需要精確地傳送該等點滴進入一相 對之小雷射-點滴相互作用區域。再者，用於此型式之雷射 10 點滴相互作用，於該相互作用區域中，該射束點典型需要 比該點滴直徑較小，以接近百分之100的耦合。用於此方 案，甚至小不重合可導致該點滴及雷射脈衝間之非有效耦 合，導致減少之EUV輸出及該輸入功率及該輸出EUV功率 間之一相當低的轉換效率。為增加點滴及雷射間之耦合， 15 已開發一些執行過程，以建立點滴之一調節液流，其中該 原材料可通過一毛細管及一可電致動元件、例如壓電（PZT) 材料，可被用來擠壓該毛細管及調節原材料之由該管子釋 放進入一相當均勻之點滴液流。 如在此所使用，該“可電致動元件”一詞及其衍生字， 20 意指當遭受一電壓、電場、磁場、或其組合時歷經一尺寸 變化之材料或結構，且包含、但不限於壓電材料、電致伸 縮材料及磁致伸縮材料。可電致動元件典型在一多少狹窄 之溫度範圍内有效率及可信任地操作，並使一些PZT材料具 有大約攝氏250度之最大操作溫度。對於一些目標材料，此 7 溫度係接近目標材料之熔點。譬如，錫之熔點係攝氏231 度，其對於該PZT之操作範圍留下很狹窄之邊限。再者，以 該目標材料之熔點及該PZT的最大操作溫度間之僅σ 一小 差異，可由於原材料之凝固在該毛細管的表面發生該喷嘴 之阻塞或局部阻塞。 對於未調節之點滴喷嘴，例如錫、鋰等原材料可被很 好地加熱至其熔點之上。既然在此無ρζτ，且其額外之加熱 傾向於使喷嘴阻塞減至最小。在另一方面，一Ρζτ之使用亦 可由於當操作該ΡΖΤ時所造成之超音波促成喷嘴阻塞。這些 超音波係有效率地通過該已熔化之目標材料，並可導致原 材料貯存3之内部表Φ的超音波清洗仙。此清洗作用依 序可洗掉殘留之厚塊，該厚塊可阻塞該小噴嘴孔口❶如此， 電動元件之使用以調卽點滴形成，傾向於增加系統複 雜性’可造成嘴嘴阻塞，及/或可電致動元件之使用可被 限制於某些原材料。 旦產生，該點滴可例如由於其動量及/或在重力或 -些其他力量之影響下，在—真空室内行進至一照射位 置在此例如藉著—雷射光束照射該點滴，及產生-電漿。 用於此製程m典型係在例如真空室之密封容器中產 生，並使用各㈣式之計量制設備監視 。除了產生EUV輻 、、卜這二電漿製程典型亦於該電漿室中產生不想要之 巧物(例如殘餘物）’該副產物可潛在地損壞或減少各種電 至光干7L件之㈣效率。此殘餘物可包絲量、高能量 來自該電毁形成之散播殘餘物例如原材料之原 手及:::塊/微滴。為此緣故，其通常想要的是採用- 成多’叫用於-給定Euv輸出功率所形成之殘餘 物的生相封數量及總數量減至最小。當選擇該目標尺 寸、例如點滴直徑，及/或目標级成、例如化學性，以使 殘餘物咸至最J、時，該等目標有時候被稱為所謂之“質量限 制”目標。 ;製程中’ co2雷射存在有某些優點，特別是用於 某些目標’且這些優點可包含在該輸入功率及該輸出顺 功率之間產生-相當高轉換效率的能力。然而，於某些應 用中使用co2雷射之—缺點係未能緊緊地聚焦则微米輕 射。譬如，考慮-典型具有少於100微米直徑之“質量限制” 錫點滴K0姻聚焦設計，該設計具有大約5〇 A刀，，，、之透鏡以將該雷射輕射聚焦於該剛微米點滴 上。為聚焦-光束、例如co2雷射光束，於此一設計中該 光束之發散將典型需要少於大約0.01/50=0.2職I。然而， 此值係少於在該透鏡位置具有50絲口徑之则微米輻射的 繞射限制：驗=1.22*1G.6*鮮6)/5()*鮮3)=2.6腿d，且 如此不月b抵it為克服此限制，該焦距必需減少或該透鏡 (雷射光束)直徑必f増加。衫地是，這些改良兩者具有缺 』„如ItLPP電聚可為形成在—橢圓形收集器内側，使 該雷射通過該收集器中之-開口，以抵達該照射位置。以 此裝置，射該該或增加該透鏡（雷射光束）直徑大致上需 要曰加該收集器開口之尺寸。這依序可減少收集角度 及需要複敎設計，用於_财機人窗口不遭受殘餘物。 1345931 典型設計LPP EUV光源，以產生光線供藉著一光學裝 置、諸如一微影掃描器使用。於一些案例中，這此光學裝 置由於其結構可在該體積上加上一限制，其中由該EUV光 源所產生之光線係可藉者該設備所使用。此外，設計一些 5光線使用之光學設備、例如掃描器，以用較小光源體積更 有效率地操作（亦即對於該掃描器設計者，一較小之光源體 積係更好的）。一光源之此光學特色一般已知為展度 (Etendue)數目。摘要而言，聚焦一電漿起動雷射之能力可 建立用於一照射體積之最小尺寸同時該展度數目可限制該 1〇 最大數目。 考慮到上述者，申凊人揭示一具有前置脈衝之雷射生 成式電衆 EUV光源，及使用之對應方法。 C發明内容:J 發明概要 15 於第一態樣中，一用於產生EUV光線之方法可包含以 下動作/步驟：提供一原材料；產生複數原材料點滴；以 第—光線脈衝同時照射複數原材料點滴，以建立經照射之 原材料；及此後將該經照射之原材料暴露至第二光線脈 衝，以產生EUV光線、例如藉著產生該原材料之電漿。 2〇 、 特別之執行過程中，該經照射之原材料可包含已蒸發之 原材料。於一執行過程中，該經照射之原材料可包含一薄 弱電漿(weak plasma)。視該應用而定，該光線脈衝之—或 者可藉著-C〇2雷射所產生，該原材料可包含錫，且該原 材料點滴可具有-於5微米至1〇〇微米範圍中之直徑，及於 10 1345931 一些案例中，可具有一於5微米至15微米範圍中之直徑。 於另一執行過程中，一用於產生EUV光線之方法可包 含以下動作/步驟：提供一原材料；產生至少一原材料點 滴；以第一光線脈衝照射該至少一原材料點滴，以建立經 5 照射之原材料；及將該經照射之原材料暴露至一第二光線 脈衝，以產生EUV光線。用於此執行過程，該第二光線脈 衝可被聚焦至具有一焦斑尺寸之焦斑，且可允許一預定時 期，以通過該照射動作及該暴露動作之間，以在開始該暴 露動作之前允許該經照射之原材料擴展至最少該焦斑尺 10 寸。譬如，該預定時間可為數微秒。 於另一態樣中，一 EUV光源可包含一點滴產生器，其 將複數原材料點滴傳送至一目標區域；第一光線脈衝之來 源，用於在該目標區域中以該第一脈衝同時照射複數原材 料點滴，以產生一經照射之原材料；及第二光線脈衝之來 15 源，用於將該經照射之原材料暴露至該第二光線脈衝，以 產生EUV光線。於一具體實施例中，該點滴產生器可包含 一非調節式點滴產生器。於一特別之具體實施例中，該點 滴產生器可包含一多孔口喷嘴。於一特別之具體實施例 中，該點滴產生器可包含一原材料貯存器，其具有一壁面 20 及形成有一孔口；及一可電致動元件，其由該壁面隔開， 及可操作至使該壁面變形與調節來自該點滴產生器的原材 料之釋放。 圖式簡單說明 第1圖根據本發明之一態樣，顯示用於一雷射生成式電 11 漿^_ —_、之概要視圖； 第—概要視圖; 要視圏，該分配器產生孔口、原材料分配器之概 -光線脈衝同時照射二點滴，用於在一目標區域藉著 至一雷射祕 ②發及擴展該原材料供隨後暴露 射脈衝，以產生-EUV放射； 視圖，二:丁非調郎式、多孔口、原材料分配器之概要 光線刀-複數點滴，用於在一目標區域藉著一 10 15 -雷射r同時照射’以蒸發及擴展該原材料供隨後暴露至 雷射脈衝，以產生一EUV放射； 視Γ圖顯示—橫截面視圖’如沿著第4圖中之.领 顯示該多孔口分配器； 的盾f 6 A ·C圖說明在藉著一光線脈衝同時照射三點滴之後 的原材料之擴展； 交 第7A C圖說明用於產生一前置脈衝及主要脈衝的光線 傳送該等脈衝至目標位置之三不同具體實施例。 I 施'式】 較佳實施例之詳細說明 最初參考第1圖，在此根據本發明之-態樣顯示-示範 EUV光源之概要視圖，例如—雷射生成式電聚光源 2〇。如第1圖所7^ ’及在下面進-步詳細敘述者，該LPP光 源20可〇 s來源22，用於產生光線脈衝及將該光線脈衝 傳送進入-至26。如在下面詳細敘述者，該等光線脈衝可 沿著一或夕個光束路徑由該來源22行進及進入該室26，以 12 1345931 照明一或多個目標區域。 如在第1圖進-步顯示，該光源2〇亦可包含一原材料傳 送系統24，例如傳送-原枓料之點滴進入一室26之内部至 -目標區域28 ’在此該原材料目標將藉著―或多個光線脈 5衝、例如-前置脈衝及其後—主要脈衝所照射，以生成— * 電漿及產生-EUV放射。該原材料可包含、但不限於一包 含錫、鋰、氙或其組合之材料。該EUV放射元素，例如锡、 # *、氣等可為呈液體點滴及/或包含在液體點滴内的固體 微粒之形式，或於不連續的數量中將該EUV放射元素傳送 1〇至該目標區域之任何其他形式。於一些案例中，該等點滴 可包含一電荷，而允許該等點滴選擇性地操縱朝向或遠離 該目標區域28。 持續看第1圖，該光源20亦可包含一收集器3〇、例如— 反光鏡、例如呈截頭橢圓之形式、例如一具有交替之鉬及 15矽層的多層鏡片，並設有一孔口，以允許由該來源22所產 # 生之光線脈衝通過該孔口及抵達該目標區域28。該收集器 30可為例如一橢圓形鏡片’其具有在該目標區域28内或接 近該目標區域28之第一焦點，及在一所謂中介點4〇(亦稱為 該中介焦點40)之第二焦點，在此第二焦點，該euv光線可 20由該光源20輸出及輸入至例如一積體電路微影工具(未示出）。 該光源20亦可包含一 EUV光源控制器系統6〇，其亦可 包含一點火控制系統65，用於觸發該來源22中之一或多個 燈泡及/或雷射源，以藉此產生用於傳送進入該室26之光 線脈衝。該光源20亦可包含一點滴位置偵測系統，其可包 13 1345931 含一或多個點滴成像器70，該等點滴成像器提供一或多個 點滴、例如相對該目標區域28之位置的輸出指示，及將此 輸出提供至一點滴位置偵測回饋系統62 ’該回饋系統可例 如計算一點滴位置及執道，由此可例如藉著點滴基礎在一 5點滴上或平均計算一點滴誤差。該點滴誤差可接著被提供 當作一至該光源控制器60之輸入，其可例如提供一位置、 方向、及時機修正信號至該來源22，以控制一來源定時電 路及/或控制一光束位置及修整系統，例如改變待傳送至 該室26的光線脈衝之位置及/或焦點功率。 10 如第1圖所示，該光源20可包含一點滴傳送控制系統 90，其可回應於一來自該系統控制器60之信號(於一些執行 過程中可包含上述之點滴誤差、或一些源自該處之數量)操 作’以例如修改來自一點滴傳送機件92的原材料之釋放 點’以校正抵達該想要之目標區域28的點滴中之誤差。 15 第2圖較大詳細地顯示一點滴傳送機件92之範例。如在 此所視，該點滴傳送機件92可包含一加壓卡匣143，其例如 使用氬氣在壓力下裝盛一熔化之原材料，例如錫、鋰等， 炎tr架構成使該熔化之原材料通過一組過濾器144、145， 该等過濾器可分別為譬如十五及七微米，以誘捕七微米及 7〇糝六之固體夾雜物，例如像氧化物、氮化物之錫化合物； 食屬雜質等。由該等過濾器144、145，該原材料可通過至 〆分配器148 〇 第3及4圖顯示點滴分配器丨48,、148”之二不同具體實 施例，用於產生及傳送複數點滴至一目標區域28,、28”， 14 1345931 使得該二或更多點滴（例如第3圖中之點滴200a’、200b’ ；例 如第4圖中之點滴200a’’、200b，’、200c”及200d”)可同時駐在 該目標區域28’、28”中，如所示。更詳細地，第3圖顯示一 具有單一孔口 202’之原材料分配器148，原材料204’係通過 : 5該孔口，以建立1)離開該分配器之點滴的一液流，或2)—連 , 續之液流’其離開該分配器148’及隨後由於表面張力分成 諸點滴。於任一案例中，複數點滴係產生及傳送至該目標 φ 區域28’ ’使得該二或更多點滴可同時駐在該目標區域28, 中。如在下面進一步詳細敘述者，在一些案例中，該目標 10區之尺寸（其係至少局部藉著用於照射該目標區中之點滴 的光束所界定）可為大於單一點滴之尺寸，允許該EUV光源 可容納點滴的一液流，該等點滴不須是尺寸或位置均勻者 (例如相對一由s玄孔口延伸至該目標區域中心之直線的位 置、及/或相對由該相同孔口所釋放之其他點滴的位置）。 15如此，用於一些具體實施例，一非調節式分配器可被使用。 φ 如在此所使用’該“非調節式分配器，，一詞及其衍生字意指 不會利用一輸入信號之分配器，其具有一在或接近該點滴 形成頻率之頻率，用於經過一分配器孔口所形成之點滴。 - 儘管非調節式分配器有上述之利益，對於某些應用，在此 20所敘述之光源可利用及自—調節式分配器獲益，諸如2005 年2月25日提出、標題為‘‘用於極端紫外線電漿源目標傳送 之方法與裝置”之美國專利申請案序號第11/〇67，124號， 2005年6月29日提出、標題為‘‘Lpp極端紫外線電漿源材料目 標傳送系統’，之美國專利申請案序號第丨丨/丨74,443號中所敘 15 1345931 述及主張的分配器之一，該二者之内容已事先以引用的方 式併入本文中。1345931 IX. INSTRUCTIONS: This application claims US Patent No. 2005-0085-01, entitled "Laser-Generated Plasma Extreme Ultraviolet Light Source with Pre-pulse", dated February 21, 2006 Priority of Application No. U/358,988, 5 which was issued on February 25, 2005, entitled "Methods and Devices for Target Transmission of Extreme Ultraviolet Plasma Sources", Agent Case No. 2004-0008-01 Part of the continuation of the U.S. Patent Application Serial No. 11/067,124, the entire disclosure of which is incorporated herein by reference. The US patent application filed on February 21, 2006 was also filed on June 10, 2005, entitled "LPP Extreme Ultraviolet Plasma Material Source Target Transfer System", Agent Case No. 2005-0003-01 A contiguous application of U.S. Patent Application Serial No. 11/174,443, the entire disclosure of which is incorporated herein by reference. This case is also related to the United States non-provisional patent application filed at the same time as the agent's case number 15 2005-0102-01, entitled "The Raw Material Dispenser for Extreme Ultraviolet Light Sources", the whole The contents are hereby incorporated by reference. This application is also related to the United States Non-Provisional Patent Application, entitled "Laser", which is also filed at the same time, attorney number 2005-0081-01 The present invention is hereby incorporated by reference in its entirety. This application is also related to the United States Provisional, filed concurrently, attorney Docket No. 2006-0010-01 The patent application, entitled "Extreme Ultraviolet Light Source", the entire contents of which is incorporated herein by reference in its entirety by reference in its entirety in its entirety in the the the the the the the the the the a light source, for example, providing EUV light from a plasma created by a raw material at a wavelength of about 50 5 nm or less, and directing and directing the light to a focus for supply Use of the outdoor side of an EUV source, such as lithography for the fabrication of semiconductor integrated circuits. t Λ. 3 Background of the Invention 10 Extreme ultraviolet ("EUV") light, for example electromagnetic radiation having a wavelength of about 50 nm or less (sometimes referred to as soft X-rays) and containing light at a wavelength of approximately 13.5 nanometers, can be used in lithography processes to produce very small parts in substrates such as germanium wafers. The method includes, but is not limited to, converting the material into a plasma state having an element such as lanthanum, lithium, tin, and having an emission line in the EUV range. Medium, commonly referred to as laser-generated plasma ("LPP"), which can be produced by irradiating a target material such as droplets, streams or clots of a material with a laser beam. Having the desired line-emitting elements. To date, 20 systems have been disclosed in which each droplet is continuously illuminated by a separate laser pulse to form a plasma from each droplet. Systems have also been disclosed, Borrowing one The slurry-generating pulse (e.g., the primary laser pulse) is sufficiently illuminated to produce an EUV from the pre-pulse raw material, each droplet is continuously illuminated by a separate pre-pulse, such as a light pulse (one per drop) 6 1345931 As an example, for tin and lithium raw materials, the raw material can be heated above its individual melting point and forced through an orifice to produce a drop. However, this type of unregulated spray typically produces A subsequent flow that is divided into droplets rather than chaos. The result is roughly a large change in the droplet size, and 5 the positional stability along the droplet path and the plane orthogonal to the droplet path. In this case, for a single ray pulse (not including a pre-pulse) for each drop combination as described above, it may be necessary to accurately transmit the droplets into a relatively small laser-drip interaction region. . Again, for this type of laser 10 drop interaction, in this interaction region, the beam spot typically needs to be smaller than the droplet diameter to approach 100 percent coupling. For this scheme, even small misalignment can result in inefficient coupling between the droplet and the laser pulse, resulting in a reduced EUV output and a relatively low conversion efficiency between the input power and the output EUV power. In order to increase the coupling between the droplets and the laser, 15 an implementation process has been developed to establish a flow of one of the droplets, wherein the raw material can pass through a capillary and an electrically actuatable element, such as a piezoelectric (PZT) material. The tube is used to squeeze the capillary and regulate the release of the material into a fairly uniform droplet stream. As used herein, the term "electrically actuatable element" and its derivatives, 20, mean a material or structure that undergoes a dimensional change when subjected to a voltage, electric field, magnetic field, or a combination thereof, and includes, but It is not limited to piezoelectric materials, electrostrictive materials, and magnetostrictive materials. The electrically actuatable element typically operates efficiently and with confidence over a relatively narrow temperature range and allows some PZT materials to have a maximum operating temperature of about 250 degrees Celsius. For some target materials, this 7 temperature is close to the melting point of the target material. For example, the melting point of tin is 231 degrees Celsius, which leaves a very narrow margin for the operating range of the PZT. Further, a small difference of only σ between the melting point of the target material and the maximum operating temperature of the PZT may cause clogging or partial clogging of the nozzle on the surface of the capillary due to solidification of the raw material. For unadjusted drip nozzles, raw materials such as tin, lithium, etc. can be well heated above their melting point. Since there is no ρζτ here, and its additional heating tends to minimize nozzle clogging. On the other hand, the use of a Ρζτ can also contribute to nozzle clogging due to the ultrasonic waves caused when the cymbal is operated. These ultrasonic waves pass through the melted target material efficiently and can cause ultrasonic cleaning of the internal surface Φ of the raw material storage 3. This cleaning action can sequentially wash away the remaining thick block, which can block the small nozzle opening. Thus, the use of the electric component is formed by puncturing, which tends to increase the system complexity, which can cause the nozzle to block, and / or the use of electrically actuatable components can be limited to certain raw materials. Once generated, the droplets may, for example, due to their momentum and/or under the influence of gravity or some other force, travel within the vacuum chamber to an illumination position where the droplets are illuminated, for example by a laser beam, and the electricity is generated. Pulp. This process m is typically produced in a sealed container such as a vacuum chamber and monitored using a metering device of each type (4). In addition to producing EUV radiation, the two plasma processes typically produce unwanted artifacts (such as residues) in the plasma chamber. This by-product can potentially damage or reduce various electrical to light-drying 7L pieces. effectiveness. This residue can be coated with a high amount of energy from the disseminated residue of the electrical destruction, such as the raw material of the raw material and:::block/microdroplet. For this reason, it is generally desirable to minimize the number and total number of phase seals used for the residue formed by the given Euv output power. When the target size, e.g., the drip diameter, and/or the target level, e.g., chemical, is selected to salt the residue to the maximum J, these targets are sometimes referred to as so-called "quality limits" targets. The 'co2 lasers in the process have certain advantages, particularly for certain targets' and these advantages can include the ability to produce - a fairly high conversion efficiency between the input power and the output power. However, the use of co2 lasers in some applications - the disadvantage of not being able to focus tightly on micron light. For example, consider a "mass-limited" tin-drop K0 marriage focusing design with a diameter of less than 100 microns, which has a lens of about 5 〇A,,,, to focus the laser light on the micron droplets. on. To focus a beam, such as a co2 laser beam, the divergence of the beam in this design will typically require less than about 0.01/50 = 0.2 job I. However, this value is less than the diffraction limit of micron radiation with a 50 wire diameter at the lens position: test = 1.22 * 1 G. 6 * fresh 6) / 5 () * fresh 3) = 2.6 leg d, and so In order to overcome this limitation, the focal length must be reduced or the diameter of the lens (laser beam) must be increased. In the case of the shirt, these improvements are both indispensable. For example, the ItLPP electropolymer can be formed on the inside of the elliptical collector, so that the laser passes through the opening in the collector to reach the irradiation position. Shooting this or increasing the diameter of the lens (laser beam) generally requires the addition of the size of the collector opening. This in turn reduces the collection angle and requires a reclamation design for the window to not suffer from residue. 1345931 A typical design of an LPP EUV source to generate light for use by an optical device, such as a lithography scanner. In some cases, the optical device may have a limit on the volume due to its structure, wherein The light produced by the EUV source can be used by the device. In addition, some 5 light-using optical devices, such as scanners, are designed to operate more efficiently with smaller source volumes (ie for the scanner designer) A smaller source of light is better. The optical characteristic of a light source is generally known as the number of etendues. In summary, the ability to focus a plasma to initiate a laser can be established. For the minimum size of an illumination volume, the number of spreads can limit the maximum number of 1 。. In view of the above, the applicant reveals a laser-generated electric EUV light source with pre-pulse, and the corresponding method of use C SUMMARY OF THE INVENTION: SUMMARY OF THE INVENTION In a first aspect, a method for producing EUV light can include the following actions/steps: providing a raw material; generating a plurality of raw material droplets; and simultaneously irradiating the plurality of raw materials with the first light pulse And illuminating the irradiated raw material; and thereafter exposing the irradiated raw material to a second light pulse to generate EUV light, for example, by generating a plasma of the raw material. 2〇, in particular, during the execution, the irradiated The raw material may comprise the evaporated raw material. During the execution, the irradiated raw material may comprise a weak plasma. Depending on the application, the light pulse may be - or may be by -C〇2 Produced by a laser, the raw material may comprise tin, and the raw material droplet may have a diameter ranging from 5 micrometers to 1 micrometer, and 10 1345931 In the case, there may be a diameter in the range of 5 micrometers to 15 micrometers. In another implementation, a method for generating EUV light may include the following actions/steps: providing a raw material; generating at least one raw material droplet; a first light pulse illuminating the at least one raw material droplet to establish a 5-irradiated raw material; and exposing the irradiated raw material to a second light pulse to generate EUV light. For performing the process, the second light pulse Can be focused to a focal spot having a focal spot size and can be allowed for a predetermined period of time to pass between the illumination action and the exposure action to allow the illuminated raw material to expand to a minimum of the focus prior to initiating the exposure action The scale is 10 inches. For example, the predetermined time may be several microseconds. In another aspect, an EUV light source may include a drop generator that delivers a plurality of raw materials to a target area; the source of the first light pulse, And irradiating a plurality of raw material droplets with the first pulse in the target region to generate an irradiated raw material; and a second light pulse 15 to the source for the exposure of the irradiated material to the second light pulses to generate the EUV light. In one embodiment, the drip generator can include a non-regulating drip generator. In a particular embodiment, the drip generator can comprise a multi-port nozzle. In a particular embodiment, the drip generator can include a raw material reservoir having a wall surface 20 and an aperture formed therein; and an electrically actuatable element separated by the wall surface and operable The wall is deformed and the release of the raw material from the drip generator is regulated. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a laser-generated electric discharge 11 ___ according to an aspect of the present invention; a first overview view; , the raw material dispenser - the light pulse simultaneously illuminates two drops, used to spread the laser in a target area to a laser and expand the raw material for subsequent exposure to generate -EUV radiation; view, two: An outline of a non-pronounced, multi-port, raw material dispenser ray knife - a plurality of droplets used to simultaneously illuminate a target area by a 10 15 -laser r to evaporate and expand the raw material for subsequent exposure to a laser pulse To produce an EUV radiation; a view of the cross-sectional view of the cross-sectional view as shown in Figure 4. The shield f 6 A · C diagram illustrates simultaneous illumination by a pulse of light Extension of the raw material after three o'clock; Figure 7A C illustrates three different embodiments for generating a pre-pulse and a main pulse of light to deliver the pulses to the target location. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Referring initially to Figure 1, a schematic view of an exemplary EUV source, such as a laser-generated electro-convex source, is shown in accordance with the present invention. As described in detail in Figure 1 and in the following, the LPP source 20 can be used to generate a pulse of light and to transmit the pulse of light into -26. As will be described in more detail below, the light pulses can travel from the source 22 and into the chamber 26 along one or more beam paths to illuminate one or more target regions at 12 1345931. As shown in step 1 of the first step, the light source 2〇 may also include a raw material delivery system 24, such as a transfer-original drip into the interior of a chamber 26 to a target area 28 where the raw material target will be borrowed - or a plurality of light pulses, 5 pulses, for example - a pre-pulse and thereafter - a main pulse, to generate - * plasma and produce - EUV radiation. The raw material may include, but is not limited to, a material comprising tin, lithium, cerium or a combination thereof. The EUV radiation element, such as tin, #*, gas, etc., may be in the form of a liquid droplet and/or solid particles contained in a liquid droplet, or the EUV radiation element may be delivered to the target in a discrete amount. Any other form of the area. In some cases, the droplets may contain a charge that allows the droplets to be selectively manipulated toward or away from the target region 28. Continuing with Figure 1, the light source 20 can also include a collector 3, for example, a mirror, for example in the form of a truncated ellipse, such as a multilayer lens having alternating layers of molybdenum and 15 turns, and having an aperture To allow light rays generated by the source 22 to pass through the aperture and to reach the target area 28. The collector 30 can be, for example, an elliptical lens having a first focus within or near the target area 28 and a so-called intermediate point 4 (also referred to as the intermediate focus 40) Two focuss, at this second focus, the euv light 20 can be output by the light source 20 and input to, for example, an integrated circuit lithography tool (not shown). The light source 20 can also include an EUV light source controller system 6〇, which can also include an ignition control system 65 for triggering one or more light bulbs and/or laser sources in the source 22 for use thereby A pulse of light that is transmitted into the chamber 26 is transmitted. The light source 20 can also include a drop position detection system that can include 13 1345931 with one or more drop imagers 70 that provide one or more drops, such as an output relative to the location of the target region 28. Indication, and providing this output to the drop position detection feedback system 62', the feedback system can, for example, calculate a drop location and an obedience, whereby a drop error can be calculated on a 5 point drop or on average, for example, by a drip basis. The drip error can then be provided as an input to the light source controller 60, which can, for example, provide a position, direction, and time machine correction signal to the source 22 to control a source timing circuit and/or control a beam position and The conditioning system, for example, changes the position of the light pulses to be delivered to the chamber 26 and/or the focus power. 10, as shown in FIG. 1, the light source 20 can include a drop delivery control system 90 responsive to a signal from the system controller 60 (which may include the above-described drip error, or some of The number) operates 'to modify, for example, the release point of the raw material from the drop conveyor 92' to correct for errors in the drip that reaches the desired target area 28. 15 Figure 2 shows an example of a drop conveyor 92 in greater detail. As seen herein, the drip conveyor member 92 can include a pressurization cartridge 143 that holds a molten raw material, such as tin, lithium, etc., under pressure, for example, using argon. The raw material passes through a set of filters 144, 145, which may be, for example, fifteen and seven micrometers, respectively, to trap solid inclusions of seven micrometers and seven hexagons, such as tin compounds such as oxides and nitrides; It is an impurity or the like. From the filters 144, 145, the raw material can be used to generate and deliver a plurality of drops to a different embodiment by means of a dispenser 148, Figures 3 and 4 showing the droplet dispensers ,48, 148" The target area 28, 28", 14 1345931 causes the two or more drops (for example, the dots 200a', 200b' in Fig. 3; for example, the dots 200a'', 200b, ', 200c" and 200d in Fig. 4 ") can reside in the target area 28', 28" simultaneously, as shown. In more detail, Figure 3 shows a raw material dispenser 148 having a single aperture 202' through which the raw material 204' passes: 5 To establish 1) a flow of liquid leaving the dispenser, or 2) - continuous, continuous flow 'which leaves the distributor 148' and then divided into droplets due to surface tension. In either case, plural The drip system is generated and transmitted to the target φ region 28'' such that the two or more droplets can reside in the target region 28 simultaneously. As will be described in further detail below, in some cases, the size of the target 10 region ( At least partially by illuminating the target The droplets defined by the droplets can be larger than the size of a single droplet, allowing the EUV source to accommodate a stream of droplets that do not have to be uniform in size or position (eg, relative to one by s The position of the line in the center of the target area, and/or the position of other drops released by the same aperture. 15 Thus, for some embodiments, a non-regulated dispenser can be used. The term "the" non-regulated dispenser, as used herein, means a dispenser that does not utilize an input signal having a frequency at or near the frequency at which the droplet is formed for passage through a dispenser. The drip formed by the orifice. - Although the unregulated dispenser has the above benefits, for some applications, the light source described in this 20 can be utilized and benefit from a self-regulating dispenser, such as the one proposed on February 25, 2005, entitled "' U.S. Patent Application Serial No. 11/67,124, filed on Jun. 29, 2005, entitled "'Lpp Extreme Ultraviolet Plasma Material Source Target Transfer System" One of the claimed dispensers is described in the U.S. Patent Application Serial No. PCT/S.
第4及5圖說明-非調節式、多孔口、原材料分配器 148” ’其產生複數點滴，用於藉著一光線脈衝、例如前置 :5脈衝在一目標區域28”同時照射，以蒸發及擴展該原材料供 • 隨後之暴露至一雷射脈衝、例如主要脈衝，以產生一EUV 放射。更詳細地是，第4及5圖顯示一具有九個孔口（代表性 φ 孔口 2〇2’’已被標記)之原材料分配器148”，原材料204”係通 過該孔口，以對於每一孔口建立1)離開該分配器之點滴的 10 一液流，或2)一連續之液流，其離開該分配器148，，及隨後 由於表面張力分成諸點滴。雖然顯示九個孔口，應了解可 採用超過九個及少到如二個孔口，以建立一合適之多孔口 分配器。如所示’用於該分配器148”，複數點滴係產生及 傳送至該目標區域28” ’使得二或更多點滴可同時駐在該目 15標區域28”中。以此配置，於一些案例中，可獲得有效之雷 • 射-點滴耦合’而不會使用上述以下零組件之一或多個；該 點火控制系統65、該點滴位置偵測系統、點滴成像器7〇、 點滴位置偵測回饋系統62、及/或該點滴傳送控制系統9〇β - ⑹在下面進—步詳細言之，在-些案财，該目標區 20之尺寸（其係至少局部藉著用於照射該目標區中之點滴的 光束所界定)可為大於單-點滴之尺寸，允許該廣光源< 容納點滴的一液流，該等點滴不須是尺寸或位置均勻者。 *此，用於-些具體實施例，-非調節式分配器可被使用。 奸非調節式分配器有上述之利^，對於某些應用，在此 16 所敘述之㈣可及自―調節式分配器獲益， 述。譬如’概m分㈣可仙來m似所 該多孔口分配器148”之“蓮蓬頭型，，效應。 、所不 第3及4圖亦說明各個光束路徑206, ' 206”，來自誃 源22之光線該等光束_行進至崎該目= 域。如在第3及4圖中所說明，該等光束路徑可被聚舞Z 焦斑H應了解該焦斑不須必定位在該目標區域内。 陳述另-方式，沿著光束路徑·，、”行進之脈衝可為 不聚成焦關、可«焦域目標區域狀-焦斑、可在 沿著該來源22及目標區域28’、28”間之光學路徑的一位置 被聚焦至一焦斑、或可在一位置被聚焦至一焦斑，在該位 置中’該目標區域28’、28”係沿著該來源22及焦斑間之光 學路徑定位。 為重新陳述，第3及4圖說明複數點滴可被設置在一目 標區域28’、28”中，用於藉著一光線脈衝、例如一前置脈 衝同時照射’以蒸發及擴展該原材料，及以一隨後之主要 脈衝照射’以由該擴展之原材料產生一EUV放射。第6A-C 圖說明在藉著單一光線脈衝照射之後，一目標區域中之數 個點滴2〇〇a-e的蒸發及擴展。如第6A圖所示，在t=ti，該等 點滴係設置在一目標區域中及被照射·>立即在其後，在 t=t2 ’每一點滴已被局部蒸發及已擴展，如第6B圖所示。在 時間t=t3 ’來自個別點滴之蒸氣已合併及已形成一於第6C 圖中之多少連續的蒸氣雲。視該前置脈衝之能量而定，於 一些執行過程中，該原材料可形成一薄弱電漿。如在此所 1345931 使用者’該“薄弱電漿”一詞及其衍生字意指一材料，其包 含離子’但其係少於大約百分之1電離的。在以該前置脈衝 照射之後’於一預先選定時間已經消逝之後，該經照射之 材料可暴露至—主要脈衝，以建立一電漿及產生一Ευν放 5射。應了解該原材料可暴露至超過一個之“前置脈衝”，以 於暴露至該主要脈衝之前蒸發該原材料（及於一些案例中 形成該原材料之薄弱電漿）。 第7A-C圓說明來源22’、22”、22”，之數個合適具體實 施例’用於產生及傳送該等光線脈衝、例如一前置脈衝及 10主要脈衝至該目標區域28a、28b、28c。其進一步應了解該 前置脈衝可被傳送至第一目標區域，且該主要脈衝被傳送 至第二目標區域，並使該第一及第二目標區域之位置及/ 或尺寸不同。更詳細言之，第7A圖說明一來源22’之具體實 施例’其中二分開之光源300、302被分別用於產生該前置 15脈衝及主要脈衝。第7A圖亦顯示可採用一分光鏡3〇6,以沿 著一共用之光束路徑308結合來自該光源300、302之脈衝。 光源300可為一燈泡、例如產生非相干之光線，或一雷射。 光源302典型係一雷射，但可為異於用於來源3〇〇之不同塑 式雷射。合適之雷射包含、但不限於一在1〇 6微米操作之 20例如具有1)(：:或111?激發的脈衝式C〇2雷射，一在例如高功率 及兩脈衝重複速率下操作之準分子或氟分子雷射。視該應 用而定，其他型式雷射亦可為合適的。譬如，一固態雷射、 —例如在美國專利第6,625，191、6,549,551及6,567,450號中 所顯示的ΜΟΡΑ架構之準分子雷射系統、一具有單一室之準 18 1345931 分子雷射、-具有例如振盈器室及二放大室（具有平行或串 連之放大室）之超過二室的準分子雷射、-主要器/功 率振盈器(爾〇)配置、-功率振盈器/功率放大器(p〇pA) 配置、或-播種-或多個c〇2準分子或氟分子放Α||或振盈 器室之固態雷射，可為合適的。其他設計係可能的。 10 第7B圖說明-來源22,之具體實施例，其中單一雷射係 用於產生該前置_及社要脈衝。第7C圖說明一來源 22’”之具體實施例，其中二分開之光源31〇、爪被分別用 於產生該前置脈衝及主要脈衝。第7C圖亦顯示來自該光源 310、312之脈衝可沿著不同光束路徑314、μ行進，以抵 達該目標區域28c。光源31〇可為一燈泡，例如產生非相干 之光線、或一雷射。 於執行過知中，可使用單一孔口喷嘴(看第3圖）’其 具有10微米或更少之孔口直#，以產生具有大約2〇微米或 15更少之直徑的點滴。該喷嘴及原材料、例如錫或鐘可被很 • ㈣加熱在其魅以上’以防止喷嘴阻塞。用於多數錫點 滴，-合適之前置脈衝可為譬如來自具有脈衝寬度>1〇奈秒 之Nd-YAG雷射的1_1〇毫焦耳脈衝，且在該目標區域聚焦至 ·· 離細㈣光斑，及擴展該等點滴。賴置脈衝雷 20射可在固定之重複迷率下射出，且於一些案例中，可與一 主要脈衝雷射同步化，該主要脈衝雷射可為譬如一在10.6 奈米下操作之〇)2雷射。該cc>2雷射可在該前置脈衝之後被 引發大約1-100微秒，允許該原材料蒸氣對該c〇2雷射呈現 -3〇〇__微米目標。然而，如上面所指示，較大之蒸氣目 19 1345931 標可被暴露’該最大之目標尺寸可藉著展度(Etendue)數目 所限制，該展度數目可為多達600-800微米。 於另一執行過程中’可使用一多孔口喷嘴(看第4圖）， 其具有100-200微米之喷嘴直徑d(看第5圖），且形成有數個 ·· 5孔口，及於一些案例中有20-30個孔口，或大約10微米的更 , 多之直徑d，其在同心圓中可為有組織、隨機或線性地。具 有超過一個之孔口，一或甚至若干孔口之阻塞對於EUV生 • 產係不重要的，且如此，點滴產生器之使用壽命可大幅地 增加。以此配置，可產生具有大約20微米或更少之直徑的 10點滴。該喷嘴及原材料、例如錫或鋰可被很好地加熱在其 熔點以上，以防止喷嘴阻塞。用於多數錫點滴，一合適之 别置脈衝可為譬如來自具有脈衝寬度>1〇奈秒之Nd_YAG雷 射的1-10毫焦耳脈衝，且在該目標區域聚焦至1〇〇 2〇〇微米 光斑以蒸發及擴展該等點滴。該前置脈衝雷射可在固定 15之重複速率下射出，且於一些案例中，可與一主要脈衝雷 • 射同步化’該主要脈衝雷射可為譬如-在10.6奈米下操作 之c〇2雷射。該⑺2雷射可在該前置脈衝之後被引發大約 1-100微秒，允許該原材料蒸氣對該c〇2雷射呈現一侧 - 微米目‘。以此執行過程，如與100微米之單-點滴比較， 20可獲仔材料 >肖耗之相當可觀的減少。面積之比率係 100 給與該材料祕比率減少之評估。 熟諸此技藏i t A考應了解上文所揭示的本發明之具體實施 例的態樣係思指僅只為較佳之具體實施例，且不欲以任何 方式限制本發明《揭示内容，及特別不欲僅只受限於-特 20 的已 定較佳之具體實施例。可對所揭示發明之具體實施例 揭系態樣作很多變化及修正，並將藉由熟諳此技藝者所了 解及體會。所附申請專利範圍係意欲在範圍中 且意指不 只涵蓋本發明之具體實施例的已揭示態樣，同樣涵蓋此等 對於熟諳此技藝者將變得明顯之同等項及其他修正與改 變。雖然在滿足35美國§112所需之詳細中，在此專利申靖 案中所敘述及說明的具體實施例之特別態樣係能夠完全庐 得任何上述之目的，對於待解決之問題、或任何其他理由二 或上述-具體實施例的態樣之目的，熟諸此技藝者應了解 本發明之已敘述具體實施例的目前敘述態樣，係僅只藉著 本發明所寬廣地考慮之主題的示範、說明及代表。諸具體 實域之目缝述及主張態樣的·完全涵蓋其他具體實 ^例’基於觀明書之教導，該等具體實施例現在對於那 ，熟諸此技藝者可為或可變得明顯的。本發明之範圍係僅 、及凡王又限於所附之申請專利範圍，且沒有任何超出所 附之申β專利之限制者^於此等中請專利範圍中，於 單數中參考元件係不欲意指、也將不意謂解釋此主張 為個及僅只一個，，，除非明破地如此陳述、但非“一 5 i於已知或稍後將由那些熟諳此技藝者所得知的 ”體實施例之上述態樣的任何元件之所有結構及功能同等 係在此月確地以引用的方式併入本文中，且意欲藉著 所呈現之f請專利範_涵括。該說明書中及/或於該等 申明專利範圍中所使用、與在本申請案的說明書及/或申 月專飾圍t明確地給與—意義之名詞，應具有該意義， 1345931 5 10 15 9 20 —ι體::::典或其他用於此—名詞之-般使用意義。如 “體實⑽之任何M，對於在魏明書 =方法係不欲或不需要的，以致力於待藉著此申二 斤=之具體實施例的態樣所解决之每—及每個探求問 ”係思欲藉由本㈣專利範圍所涵蓋。本揭示内容 中無任何元件、零組件、或方法步驟係意欲奉獻給該公眾， 不管該元件、零組件、或方法步驟是否在該等申請專利範 圍中明確地陳述。於該等所附申請專利範圍中之沒有主張 元件將被視為在35美_12的條款、第六段之下，除非^ 元件係使用該片語“用於...之機構，，明確地陳述或於—方^ 申請專利範圍之案例中’該元件係陳述為-“步驟”，代替 一“作用”。 【圖式簡單明】 第1圖根據本翻之—態樣，顯^用於―雷射生成式電 衆EUV光源的整個寬闊構想之概要視圖； 第圖，貝7F原、材料過據器/分配器组件之概要視圖； 第3圖顯示-非調節式、單一孔口、原材料分配器之概 要視圖’該分配器產生複數點滴，用於在一目標區域藉著 光線脈衝同相、射，以紐及擴展該原材料供隨後暴露 至-雷射脈衝’以產生一 Ευν放射； 第4圖顯示—非調節式、多孔口、原材料分配器之概要 視圖，該分配器產生複數點滴，用於在—目標區域藉著— 光線脈衝同時照射，以蒸發及擴展該原材料供隨後暴露至 -雷射脈衝，以產生—Ευν放射； 22 1345931 第5圖顯示一橫截面視圖，如沿著第4圖中之剖線5-5所 視，並顯示該多孔口分配器； 第6A-C圖說明在藉著一光線脈衝同時照射三點滴之後 的原材料之擴展， 5 第7A-C圖說明用於產生一前置脈衝及主要脈衝的光線 脈衝來源及傳送該等脈衝至目標位置之三不同具體實施例。 【主要元件符號說明】 20.. .光源 22，22’，22”，22”，…來源 24.. .原材料運送系統 26.. ·室 28，28’，28”，28a，28b，28c...目標區域 30.. .收集器 40.. .中介點 60.. . EUV光源控制器系統 62.. .點滴位置偵測回饋系統 65…點火控制系統 70.. .點滴成像器 90.. .點滴運送控制系統 92…點滴運送機件 143…加壓卡匣 144，145...過濾器 148.. .分配器 148’，148”...點滴分配器 23 1345931Figures 4 and 5 illustrate - an unregulated, porous port, raw material dispenser 148" 'which produces a plurality of droplets for simultaneous illumination by a pulse of light, for example a pre-position: 5 pulses in a target zone 28" to evaporate And expanding the raw material for subsequent exposure to a laser pulse, such as a primary pulse, to produce an EUV radiation. In more detail, Figures 4 and 5 show a raw material dispenser 148" having nine orifices (representative φ orifices 2〇2'' have been marked) through which the raw material 204" passes Each orifice establishes 1) a stream of 10 drops exiting the dispenser, or 2) a continuous stream of liquid exiting the dispenser 148, and subsequently separated into droplets due to surface tension. Although nine orifices are shown, it should be understood that more than nine and as few as two orifices can be used to create a suitable porous orifice dispenser. As shown for 'for the dispenser 148', a plurality of drip lines are generated and transmitted to the target area 28"' such that two or more drops can reside in the target area 28" simultaneously. In this configuration, in some cases In this case, an effective lightning-eject-drop coupling can be obtained without using one or more of the following components; the ignition control system 65, the droplet position detecting system, the drip imager 7〇, the spot position detection The feedback system 62, and/or the drip transfer control system 9〇β-(6), in the following, details the size of the target zone 20 (which is at least partially used to illuminate the target) The spotted light beam in the zone can be larger than the single-drip size, allowing the wide light source to accommodate a flow of droplets that do not have to be uniform in size or position. *This, for some In particular, a non-regulating dispenser can be used. The non-regulating dispenser has the benefits described above, and for some applications, the four (4) described herein can benefit from the "regulator". Such as 'general m points (four) can be immortal m like much The "nozzle head type, effect" of the orifice distributor 148", and the third and fourth figures also illustrate the respective beam paths 206, '206", the light rays from the source 22 are traveling to the surface of the field. . As illustrated in Figures 3 and 4, the beam paths can be focused on the Z focal spot H. It should be understood that the focal spot does not have to be positioned within the target area. Stated another way, along the beam path, ", the pulse of travel may be non-aggregated, can be "focal domain target area - focal spot, may be along the source 22 and target area 28', 28" A position of the optical path between the two is focused to a focal spot, or can be focused at a position to a focal spot in which the 'target region 28', 28' is along the source 22 and the focal spot Optical path positioning. For restatement, Figures 3 and 4 illustrate that a plurality of dots can be placed in a target region 28', 28" for simultaneous illumination by a pulse of light, such as a pre-pulse, to evaporate and expand. The raw material, and irradiated with a subsequent primary pulse, to produce an EUV radiation from the expanded raw material. Figure 6A-C illustrates the evaporation and expansion of several drops 2〇〇a-e in a target region after being illuminated by a single pulse of light. As shown in Fig. 6A, at t = ti, the drip systems are placed in a target area and are illuminated. > Immediately thereafter, at t = t2 ' each drop has been partially evaporated and expanded, such as Figure 6B shows. At time t = t3 ', the vapors from the individual droplets have merged and how many successive vapor clouds have formed in Figure 6C. Depending on the energy of the pre-pulse, the raw material can form a weak plasma during some executions. As used herein, the term "weak plasma" and its derivatives mean a material that contains ions' but is less than about one percent ionized. After the pre-selected time has elapsed after being irradiated with the pre-pulse, the irradiated material may be exposed to a - primary pulse to establish a plasma and produce a Ευ 放 shot. It should be understood that the raw material may be exposed to more than one "pre-pulse" to evaporate the raw material prior to exposure to the primary pulse (and in some cases to form a weak plasma of the raw material). 7A-C circle illustrates sources 22', 22", 22", and a number of suitable embodiments 'for generating and transmitting the light pulses, such as a pre-pulse and 10 primary pulses, to the target regions 28a, 28b 28c. It is further understood that the pre-pulse can be transmitted to the first target area and the primary pulse is transmitted to the second target area with different locations and/or sizes of the first and second target areas. In more detail, Figure 7A illustrates a specific embodiment of a source 22' in which two separate light sources 300, 302 are used to generate the pre-pulse 15 and the main pulses, respectively. Figure 7A also shows that a beam splitter 3〇6 can be employed to combine the pulses from the source 300, 302 along a common beam path 308. Light source 300 can be a light bulb, such as producing incoherent light, or a laser. Light source 302 is typically a laser, but may be different from the different plastic lasers used for source 3〇〇. Suitable lasers include, but are not limited to, one operating at 1 〇 6 microns, such as a pulsed C 〇 2 laser with 1) (:: or 111 Å excitation, one operating at, for example, high power and two pulse repetition rates Excimer or fluoro-molecular lasers. Other types of lasers may be suitable depending on the application. For example, a solid-state laser, as shown in, for example, U.S. Patent Nos. 6,625,191, 6,549,551 and 6,567,450.准-structured excimer laser system, a single-chamber 18 1345931 molecular laser, with more than two chambers of excimer thunder, such as a vibrating chamber and two amplification chambers (with parallel or series of amplification chambers) Shot, - main / power oscillator (er) configuration, - power oscillator / power amplifier (p〇pA) configuration, or - seeding - or multiple c〇2 excimer or fluorine molecule release | | Or a solid-state laser of the vibrating chamber may be suitable. Other designs are possible. 10 Figure 7B illustrates - source 22, a specific embodiment in which a single laser system is used to generate the pre- _ and social Pulse. Figure 7C illustrates a specific embodiment of a source 22'", where two separate The source 31 〇, the claws are used to generate the pre-pulse and the main pulse, respectively. Figure 7C also shows that pulses from the light sources 310, 312 can travel along different beam paths 314, μ to reach the target area 28c. 31〇 can be a light bulb, such as producing incoherent light, or a laser. In the implementation, a single orifice nozzle can be used (see Figure 3), which has a hole of 10 microns or less. To produce droplets having a diameter of about 2 〇 microns or 15 less. The nozzles and raw materials, such as tin or clocks, can be heated by (4) above their charms to prevent nozzle clogging. For most tin drip, - suitable The pre-pulse may be, for example, a 1_1 〇 millijoule pulse from a Nd-YAG laser having a pulse width > 1 nanosecond, and is focused to a thin (four) spot in the target area, and the dots are expanded. The pulsing Ray 20 shot can be fired at a fixed repetition rate, and in some cases, can be synchronized with a main pulsed laser, which can be operated at 10.6 nm. 2 lasers. The cc > 2 laser can be placed at the front The pulse is then induced for approximately 1-100 microseconds, allowing the raw material vapor to exhibit a -3 〇〇__micron target for the c〇2 laser. However, as indicated above, the larger vapor target 19 1345931 may be exposed 'The maximum target size can be limited by the number of Etendues, which can be as many as 600-800 microns. In another implementation, a porous nozzle can be used (see Figure 4). ), which has a nozzle diameter d of 100-200 microns (see Figure 5), and is formed with a number of 5 holes, and in some cases 20-30 holes, or about 10 microns, more The diameter d, which may be organized, random or linear in a concentric circle. With more than one orifice, one or even a few orifices are not critical to the EUV production line, and as such, the life of the droplet generator can be greatly increased. With this configuration, 10 drops having a diameter of about 20 microns or less can be produced. The nozzle and the raw material, such as tin or lithium, can be well heated above their melting point to prevent nozzle clogging. For most tin droplets, a suitable pulse can be, for example, a 1-10 millijoule pulse from a Nd_YAG laser with a pulse width of > 1 nanosecond, and focus to 1〇〇2 in the target area. The micro-spots evaporate and expand the dots. The pre-pulse laser can be fired at a repetition rate of 15 and, in some cases, can be synchronized with a main pulse radar. The main pulse laser can be operated, for example, at 10.6 nm. 〇 2 lasers. The (7)2 laser can be induced for about 1-100 microseconds after the pre-pulse, allowing the raw material vapor to exhibit a side-micron target for the c〇2 laser. In this way, if compared with a single-drip of 100 micron, 20 can get a considerable reduction in the material > The ratio of the area is 100 to give an estimate of the reduction in the material's secret ratio. It is to be understood that the specific embodiments of the present invention disclosed herein are intended to be a It is not intended to be limited to only the preferred embodiment of the invention. Many variations and modifications can be made to the specific embodiments of the disclosed invention and will be appreciated by those skilled in the art. The scope of the appended claims is intended to be in the scope of the claims While in the details required to satisfy 35 US § 112, the particular embodiment of the specific embodiment described and illustrated in this patent application is capable of fully achieving any of the above objectives, for the problem to be solved, or any Other reasons 2 or the above-described embodiments of the present invention will be understood by those skilled in the art, and the present description of the presently described embodiments of the present invention is merely exemplary of the subject matter which is broadly considered by the present invention. , instructions and representatives. The specific aspects of the actual domain and the claims are completely covered by other specific examples based on the teachings of the book, which are now or may become apparent to those skilled in the art. of. The scope of the present invention is only limited to the scope of the appended patent application, and there is no limitation beyond the scope of the appended patents. It is not intended to mean that the claim is one and only one, unless stated otherwise, but not "a 5 i is known or will be known to those skilled in the art". All of the structures and functions of any of the above-described aspects are incorporated herein by reference in its entirety, and are hereby incorporated by reference. The nouns used in this specification and/or in the scope of such claims, and in the specification of the present application and/or the special decoration of the month of the application, shall have the meaning, 1345931 5 10 15 9 20 — ι体:::: Code or other use of this term—the general meaning of the noun. For example, "any M of the body (10), for the Wei Mingshu = method is not required or necessary, to solve every problem that is to be solved by the specific embodiment of the application" "The thinking is covered by the scope of this (4) patent. No element, component, or method step in the present disclosure is intended to be dedicated to the public, regardless of whether the element, component, or method step is explicitly stated in the scope of the patent application. No claim element in the scope of the appended claims will be considered to be under the terms of 35 US _12, under the sixth paragraph, unless the element is used in the phrase "for institutions" In the case of the local statement or in the case of applying for patents, the component is stated as - "step" instead of "action". [Simplified and simple] Figure 1 is based on this aspect. A summary view of the entire broad concept of a laser-generated electric EUV source; Figure 1, a schematic view of the original 7F, material pass/distributor assembly; Figure 3 shows an unregulated, single orifice, A schematic view of a raw material dispenser that produces a plurality of droplets for in-phase, shot, and expansion of the raw material for subsequent exposure to a -laser pulse in a target region to produce a Ευν radiation; Figure 4 shows a schematic view of a non-regulated, porous port, raw material dispenser that produces a plurality of droplets for simultaneous illumination in the target area by a pulse of light to evaporate and expand the raw material for subsequent exposure to - Laser Rushing to produce - Ευν radiation; 22 1345931 Figure 5 shows a cross-sectional view, as seen along section line 5-5 in Figure 4, and shows the porous port dispenser; Figure 6A-C illustrates By means of a light pulse simultaneously illuminating the extension of the material after three drops, 5 Figures 7A-C illustrate three different embodiments of the source of the light pulses for generating a pre-pulse and a main pulse and the transmission of the pulses to the target position [Main component symbol description] 20.. Light source 22, 22', 22", 22", ... source 24.. Raw material delivery system 26: · Room 28, 28', 28", 28a, 28b, 28c ...target area 30.. Collector 40.. . Intermediary point 60.. . EUV light source controller system 62.. Drip position detection feedback system 65... Ignition control system 70.. Drip imager 90. . drip transport control system 92... drip transport mechanism 143... pressurization cassette 144, 145... filter 148.. dispenser 148', 148"... drip dispenser 23 1345931
200a，200a’，200a”，200b，200b’，200b”，200c，200c’’...點滴 202,，202”…孔口 204’，204”...原材料 206’，206”，308，314，316...光束制查 300，302，310，312...光源 306· .·分光鏡 24200a, 200a', 200a", 200b, 200b', 200b", 200c, 200c''... drip 202, 202"... aperture 204', 204"... raw material 206', 206", 308, 314, 316... beam inspection 300, 302, 310, 312... light source 306·.·beam splitter 24