1342613 九、發明說明： 【發明所屬之技術領域】 發明背景 發明範圍 本發明係關於一種Π I族氮化物半導體發光元件；特別 關於一種已提高其光引出（light-extract ion)效率的III族氮 化物半導體發光元件。 【先前技術】 先前技藝之描述 ΙΠ族氮化物半導體（於此之後，縮寫爲"氮化物半導體 ")擁有一直接能量轉換型式的能帶隙，該能量與可見光到 紫外光的區域相符合且其准許有高發光效率，因此其已化 爲商業產品，諸如發光二極體（LED)及雷射二極體（LD)。特 別是’已預計發白光二極體之實現（由於其與螢光材料的組 合）可作爲發光二極體應用的新領域。 發光二極體之輸出由內部量子效益（例如，與其磊晶結 構或結晶性相關）乘以光引出效率（其與在該元件或該元件 的形狀中之再吸收性相關）的乘積來決定。在上述提及的因 素當中，當光重覆碰撞在基材（其對所發射的光具不透性） 上或穿透過發光層時’會在該元件中發生再吸收而影響光 引出效率。在元件表面上的總反射其自身將構成—對光引 出架構具有重大影響的因素。已眾所周知的是，當光從大 折射率層行進至小折射率層時，超過臨界角（0 c)的光部分 會在界面中接受總反射而無光被引出至小折射率層。例 1342613 如，在氮化鎵（GaN)的實例中，因爲其折射率爲2.4，僅有 進入具有頂點角度24° (相對於垂直該表面的方向）的逃逸 錐面之光可被引出外部。 此比率爲2 7 %。因此，由於此效應而大大限制光引出 效率。當想要避免將此來自界面的總反射強加在抑制該光 引出上時’已知的方法有讓界面變粗糙（例如，參照日本專 利案號2 8 3 6 6 8 7 )及分歧該元件的形狀以使用另一表面的逃 逸錐面（例如’參照日本專利案號 2 7 8 4 5 3 7 )。已普遍使用 • MOCVD(金屬有機化學氣相沉積）方法來生長氮化物半導 體。MOCVD方法爲一種讓一有機金屬與一氮來源在一基材 ' 上反應來生長出氮化物半導體的方法。但是，單晶氮化物 ( 半導體尙未以商業規模製造。雖然在市場上已可利用 ' Η V P E (氫化物氣相磊晶）方法在S i或G a A s基材上實現厚膜 磊晶生長來獲得一假單晶基材，但其極昂貴。因此，通常 會使用在高溫下安定的異質基材（諸如藍寶石（ai2o3)或碳 化矽（SiC)基材）作爲該發光二極體用之基材。 # 但是，該使用作爲安定物質的藍寶石及s i C亦已知爲 一很硬而不易加工的物質。因此，在將其分割成組成元件 的製程上，會有提高光引出效率之目標難以達成的問題。 當使用機械切割方法來達成此分割時，從而獲得的組成元 件時常會蒙受到碎屑及破裂，而難以達到提供提高產率。 當使用乾式蝕刻方法作爲無機械加工手段來達成該分割 時，其耗時長，因此將嚴重降低生產力。 已知憑藉著切割方法的機械方法會在加工表面上形成 1342613 —稱爲破碎層的層，其將干擾光引出過程；同樣地’已知 乾式蝕刻會因曝露至髙電漿能量顆粒下而讓表面的電及光 學性質受影響。已亦熟知溼式蝕刻爲一無明顯損傷的加工 方法（例如，參照]P - A Η EI 1 0- 1 9 0 1 5 2 及 J Ρ - A 2 0 Ο 0 - 6 8 6 0 8 )。但是，使用此方法所製造的組成元件具有垂 直的分割截面。 考慮到諸如來自氮化物半導體發光元件的光之光引出 效率會因總反射而下降’及該光引出效率會因在難以加工 φ 的基材上進行機械加工方法期間所產生之破碎層而下降的 問題，本發明之目標爲提高該氮化物半導體發光元件的光 引出效率。 > 本發明之引出光的目的已基於下列發現而達成：可藉 -由使用不會造成任何重要損傷的溼式蝕刻製程作爲該加工 方法，讓在氮化物半導體元件中之半導體層的側面呈傾斜 且同時使用此面，來提高該光引出效率。 【發明內容】 • 發明槪述 本發明的第一觀點爲提供一種氮化物半導體發光元 件，其包含一基材及一堆疊在該基材上而包含一發光層之 氮化物半導體層，其中相對於在該基材與該發光層間之氮 化物半導體層的至少一側面之法線與相對於該氮化物半導 體層之表面的法線會形成一大於9 0度之角度Θ ° 本發明的第二觀點包括該第一觀點，該氮化物半導體 層的側面排除該發光層。 1342613 本發明的第三觀點包括該第一或第二觀點，該氮化物 半導體層在其自身與該發光層間具有一垂直側面。 本發明的第四觀點包括該第一觀點，該角度0爲95 度或更大及170度或較小。 本發明的第五觀點包括該第一觀點，該角度0爲1〇〇 度或更大及1 6 0度或較小。 本發明的第六觀點包括該第二觀點，該氮化物半導體 層之厚度範圍爲1至20微米。 本發明的第七觀點包括該第一至第六觀點之任何一個 觀點，該基材由藍寶石形成。 本發明的第八觀點包括該第一至第六觀點之任何一個 觀點，該基材由碳化矽形成。 本發明的第九觀點包括該第一至第八觀點之任何一個 觀點，該氮化物半導體層具有一具（〇〇〇 1 )面的表面作爲主 面。 本發明的第十觀點進一步提供一種氮化物半導體發光 元件的製造方法，其中該發光元件包含一基材及一堆疊在 該基材上而包含一發光層之氮化物半導體層’該方法之步 驟包括使用一已提供規定圖案的遮罩來覆蓋該氮化物半導 體層之第—表面，移除在欲分割成組成元件的區域中之氮 化物半導體層直至到達該基材，讓該氮化物半導體層接受 溼式蝕刻處理及將該氮化物半導體層分割成該組成元件° 本發明的第Η--觀點包括該第十觀點，該基材由藍寶 石形成。 1342613 本發明的第十二觀點包括該第十觀點，該基材由碳化 砂形成。 本發明的第十三觀點包括該第十至第十二觀點之任何 一個觀點，該遮罩爲一光阻。 本發明的第十四觀點包括該第十至第十三觀點之任何 一個觀點’使用雷射來進行該氮化物半導體層移除步驟。 本發明的第十五觀點包括該第十至第十三觀點之任何 一個觀點’使用乾式蝕刻來進行該氮化物半導體層移除步 • 驟。 本發明的第十六觀點包括該第十至第十三觀點之任何 一個觀點’使用切片機來進行該氮化物半導體層移除步驟。 本發明的第十七觀點包括該第十至第十六觀點之任何 •一個觀點’使用正磷酸來進行該溼式蝕刻處理。 本發明藉由讓該氮化物半導體元件的半導體層之側面 呈傾斜’來增加透射過該側面的光或在該側面上反射的光 量，最終將該光引出該氮化物半導體元件層而到達外部’ ® 因此可增加光引出效率。其進一步能夠在該難以加工的基 材上，利用溼式蝕刻來加工該氮化物半導體元件之側面’ 以獲得一未蒙受明顯損傷的元件。 本發明之上述及其它目標、技術特徵及優點，可爲熟 知此技藝之人士從提供於下文的說明且參考伴隨的圖形中 明瞭。 【實施方式】 較佳具體實施例之說明 » i 1342613 r 本發明係關於一種堆疊在一基材上而 氮化物半導體元件，其中相對於該氮化物 之法線與相對於該氮化物半導體層的表面 於9 0度的角度0 (於此之後指爲"經傾斜" 現在’將參考伴隨的圖形在下列中特 第1圖爲一光在本發明之氮化物半導體元 之圖式截面圖’其描繪出一具有相對於基 朝向外部傾斜之側面的半導體層202之實 ® 將在該氮化物半導體層與該發光層間之側 式截面圖。在這些圖形中，參考數字203 進方向的箭號線，數字2 0 4代表相對於該 之法線’數字205代表相對於該基材的側 ' Θ代表由這些法線所定義出的角度。因爲 發光層206配置在該元件的第—表面上下 示在第2圖之組態在該發光層2 0 6的側面 優於顯示在第1圖的組態。爲此理由，顯 ^ 態具有穩定的發光及高亮度效應。 第3圖爲一光在習知的氮化物半導體 例的圖式截面圖，其描繪出一將半導體層 擱放至基材201的主平面之實例。 然而，將使用下列的假設來邏輯解釋 半導體層的側面相對於該基材之主平面呈 的光引出效率之理由。第 3圖間明出習 體。當在位置A處所發射的光如箭號線般 包含一發光層的 半導體層的側面 之法線形成一大 )° 別解釋本發明。 件中前進的實例 材2 0 1的主平面 例。第2圖爲一 面製成垂直的圖 代表指示出光前 半導體層的側面 面之法線及符號 本發明採用將該 之元件結構，顯 之加工均勻性上 示在第2圖之組 元件中前進之實 2〇2的側面垂直 本發明藉由讓該 傾斜而獲得提高 知的氮化物半導 前進，且照射在 -10- 1342613 广 .. 該半導體的側面上之光超過臨界角度肖，此光會在射入位 置處反射且進〜步在該半導體層與該基材間之界面上反 射。因此’會降低光引出效率。 在描述於第1圖的實例中’雖然光會在該半導體層的 側面上反射，但該光會落在該半導體層與該基材間之界面 上的臨界角度內’因此可透射過此界面，最終將引出該元 件。在第丨圖中’該傾斜角度0大於9 〇度且小於1 8 〇度。 95度或更大及17〇度或較小爲較佳’而1〇〇度或更大及16〇 # 度或較小爲更佳。 因爲在第1圖的半導體之側面上的入射光落在臨界角 度內’其將透射過該半導體層。 然而，該氮化物半導體通常生長在異質基材上，該氮 化物半導體與該異質基材具有不同折射率。因此，當光在 該積層主體內傳播時，垂直端面會因爲在該端面上的反射 而將光返回該主體。構成傾斜表面的端面（如在本發明的實 例中）會改變光的前進方向而促成光引出另一表面。 ® 在本發明中，該氮化物半導體層與位於相同方向的基 材之側面不形成一連續面較佳。在本發明中，光會集中在 該氮化物半導體層內。當在該氮化物半導體與該基材間之 接合表面的外面邊部分產生一空的空間（如闡明在第〗圖） 時，在此部分中的折射率變化將增加且趨向於將光'朝向該 發光表面邊返回° 利用溼式蝕刻’使用正磷酸來形成該傾斜表面爲較 佳。因爲溼式蝕刻會引起一熱平衡反應’而此將不會對結 1342613BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Group I nitride semiconductor light-emitting device; and more particularly to a Group III nitrogen which has improved light-extraction efficiency. A semiconductor light-emitting element. [Prior Art] Description of the Prior Art The bismuth nitride semiconductor (hereinafter, abbreviated "nitride semiconductor") has an energy band gap of a direct energy conversion type, which is in accordance with the region of visible light to ultraviolet light. And it permits high luminous efficiency, so it has been turned into commercial products such as light-emitting diodes (LEDs) and laser diodes (LDs). In particular, the implementation of white light diodes (due to its combination with fluorescent materials) has been expected to serve as a new field for LED applications. The output of the light-emitting diode is determined by the product of the internal quantum benefit (e.g., related to its epitaxial structure or crystallinity) multiplied by the light extraction efficiency (which is related to the resorbability in the shape of the element or the element). Among the above-mentioned factors, when the light repeatedly collides with or penetrates the light-emitting layer on the substrate (which is impervious to the emitted light), re-absorption occurs in the element to affect the light extraction efficiency. The total reflection on the surface of the component will itself constitute a factor that has a significant impact on the light extraction architecture. It is well known that as light travels from the large refractive index layer to the small refractive index layer, portions of the light that exceed the critical angle (0 c) will undergo total reflection in the interface without light being extracted to the small refractive index layer. Example 1342613 For example, in the case of gallium nitride (GaN), since the refractive index is 2.4, only the light entering the escape cone having an apex angle of 24 (relative to the direction perpendicular to the surface) can be taken out. This ratio is 27%. Therefore, the light extraction efficiency is greatly limited due to this effect. When it is desired to avoid imposing this total reflection from the interface on suppressing the light extraction, 'a known method is to roughen the interface (for example, refer to Japanese Patent No. 2 8 3 6 6 8 7) and to divergently The shape is to use an escape cone of the other surface (for example, 'refer to Japanese Patent No. 2 7 8 4 5 3 7 ). It has been widely used • MOCVD (Metal Organic Chemical Vapor Deposition) method to grow nitride semiconductors. The MOCVD method is a method in which an organic metal is reacted with a nitrogen source on a substrate to grow a nitride semiconductor. However, single crystal nitrides (semiconductor tantalum are not manufactured on a commercial scale. Although thick film epitaxy can be achieved on the Si or Ga a s substrate by the 'Η VPE (hydride vapor epitaxy) method on the market. Growing to obtain a pseudo single crystal substrate, but it is extremely expensive. Therefore, a heterogeneous substrate (such as sapphire (ai2o3) or tantalum carbide (SiC) substrate) which is stable at a high temperature is usually used as the light emitting diode. The substrate. However, the sapphire and si C which are used as the stabilizing substance are also known as a substance which is hard and not easy to process. Therefore, in the process of dividing it into constituent elements, there is an increase in light extraction efficiency. Problems that are difficult to achieve with the goal. When using mechanical cutting to achieve this segmentation, the resulting component is often subject to debris and cracking, which is difficult to achieve to improve productivity. When using dry etching as a non-machining method When this segmentation is achieved, it takes a long time and therefore severely reduces productivity. It is known that a mechanical method by means of a cutting method forms 1342613, a layer called a fracture layer, on a machined surface. The interference light is extracted from the process; likewise, 'dry etching is known to affect the electrical and optical properties of the surface due to exposure to the plasma energy particles. Wet etching is also known as a processing method without significant damage (eg , refer to]P - A Η EI 1 0- 1 9 0 1 5 2 and J Ρ - A 2 0 Ο 0 - 6 8 6 0 8 ). However, the constituent elements manufactured by this method have a vertical split cross section. Considering that light extraction efficiency such as light from a nitride semiconductor light-emitting element may decrease due to total reflection' and the light extraction efficiency may be lowered by a fracture layer generated during a machining process on a substrate that is difficult to process φ Problem, the object of the present invention is to improve the light extraction efficiency of the nitride semiconductor light-emitting element. The purpose of the light extraction of the present invention has been achieved on the basis of the following findings: by using wet etching without causing any significant damage As a processing method, the side of the semiconductor layer in the nitride semiconductor device is inclined while using the surface to improve the light extraction efficiency. The first aspect of the present invention provides a nitride semiconductor light-emitting device comprising a substrate and a nitride semiconductor layer stacked on the substrate and including a light-emitting layer, wherein the substrate and the substrate are The normal line of at least one side of the nitride semiconductor layer between the light-emitting layers and the normal to the surface of the nitride semiconductor layer form an angle greater than 90 degrees Θ ° The second aspect of the present invention includes the first point of view, The side of the nitride semiconductor layer excludes the light-emitting layer. 1342613 A third aspect of the invention includes the first or second aspect, the nitride semiconductor layer having a vertical side between itself and the light-emitting layer. The viewpoint includes the first viewpoint that the angle 0 is 95 degrees or more and 170 degrees or less. A fifth aspect of the invention includes the first aspect, the angle 0 being 1 〇〇 or more and 160 degrees or less. A sixth aspect of the invention includes the second aspect, the nitride semiconductor layer having a thickness ranging from 1 to 20 μm. A seventh aspect of the invention includes any one of the first to sixth aspects, the substrate being formed of sapphire. An eighth aspect of the invention includes any one of the first to sixth aspects, the substrate being formed of tantalum carbide. A ninth aspect of the invention includes any one of the first to eighth aspects, the nitride semiconductor layer having a surface having a (〇〇〇 1 ) plane as a main surface. A tenth aspect of the present invention further provides a method of fabricating a nitride semiconductor light-emitting device, wherein the light-emitting element comprises a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate. Covering the first surface of the nitride semiconductor layer with a mask having a prescribed pattern, removing the nitride semiconductor layer in the region to be divided into constituent elements until reaching the substrate, allowing the nitride semiconductor layer to accept Wet etching treatment and division of the nitride semiconductor layer into the constituent elements. The present invention is based on the tenth aspect, and the substrate is formed of sapphire. 1342613 A twelfth aspect of the invention includes the tenth aspect, the substrate being formed of carbonized sand. A thirteenth aspect of the invention includes any one of the tenth to twelfth aspects, wherein the mask is a photoresist. The fourteenth aspect of the invention includes any one of the tenth to thirteenth aspects, wherein the step of removing the nitride semiconductor layer is performed using a laser. The fifteenth aspect of the invention includes any one of the tenth to thirteenth aspects, wherein the nitride semiconductor layer removing step is performed using dry etching. The sixteenth aspect of the invention includes any one of the tenth to thirteenth aspects, wherein the step of removing the nitride semiconductor layer is performed using a microtome. The seventeenth aspect of the present invention includes any of the tenth to sixteenth aspects. The one viewpoint uses the orthophosphoric acid to perform the wet etching treatment. The present invention increases the amount of light transmitted through the side surface or the amount of light reflected on the side surface by tilting the side surface of the semiconductor layer of the nitride semiconductor device, and finally extracts the light out of the nitride semiconductor device layer to the outside. ® thus increases light extraction efficiency. It is further capable of processing the side of the nitride semiconductor element by wet etching on the difficult-to-process substrate to obtain an element which is not significantly damaged. The above and other objects, features and advantages of the present invention will become apparent to those skilled in the <RTIgt; DESCRIPTION OF THE PREFERRED EMBODIMENTS DESCRIPTION OF THE PREFERRED EMBODIMENT » i 1342613 r The present invention relates to a nitride semiconductor device stacked on a substrate, wherein a normal to the nitride and a layer opposite to the nitride semiconductor layer The surface is at an angle of 90 degrees (after which it is referred to as "tilted" now' will refer to the accompanying pattern in the following: Figure 1 is a cross-sectional view of a nitride semiconductor element of the present invention. 'It depicts a side cross-sectional view of a semiconductor layer 202 having a side that is inclined toward the outside with respect to the base, between the nitride semiconductor layer and the light-emitting layer. In these figures, reference numeral 203 enters the direction of the arrow The number line, the number 2 0 4 represents the normal to the 'the number 205 represents the side relative to the substrate' Θ represents the angle defined by these normals. Because the luminescent layer 206 is disposed on the first surface of the element The configuration shown in Figure 2 above is better on the side of the luminescent layer 206 than in the configuration shown in Figure 1. For this reason, the display has stable illumination and high brightness effects. Light in the conventional A cross-sectional view of a compound semiconductor example depicting an example of placing a semiconductor layer on a principal plane of a substrate 201. However, the following assumptions will be used to logically interpret the side of the semiconductor layer relative to the major plane of the substrate. The reason for the light extraction efficiency is shown in Fig. 3. When the light emitted at the position A is as an arrow line, the normal line of the side of the semiconductor layer containing a light-emitting layer is formed. invention. An example of the advancement in the piece is the main plane of the material 2 0 1 . Figure 2 is a diagram showing the normal to the side surface of the semiconductor layer before the light is emitted. The present invention adopts the structure of the element, and the uniformity of processing is shown in the group of elements in Fig. 2 The side perpendicular of the actual 2〇2 is obtained by the tilting of the present invention to obtain a known nitride semiconducting advancement, and the illumination is on the -10- 1342613 wide. The light on the side of the semiconductor exceeds the critical angle XI, the light will Reflected at the incident position and stepped at the interface between the semiconductor layer and the substrate. Therefore, the light extraction efficiency will be reduced. In the example described in Figure 1, 'although light will be reflected on the side of the semiconductor layer, the light will fall within the critical angle at the interface between the semiconductor layer and the substrate' and thus can be transmitted through this interface. The component will eventually be brought out. In the second diagram, the tilt angle 0 is greater than 9 degrees and less than 18 degrees. 95 degrees or more and 17 degrees or less are preferred's and 1 degree or more and 16 degrees # degrees or less are more preferable. Since the incident light on the side of the semiconductor of Fig. 1 falls within a critical angle, it will be transmitted through the semiconductor layer. However, the nitride semiconductor is usually grown on a heterogeneous substrate having a different refractive index from the heterogeneous substrate. Therefore, when light propagates within the laminated body, the vertical end face returns light to the body due to reflection on the end face. The end faces that make up the inclined surface (as in the embodiment of the invention) change the direction of advancement of the light to cause light to exit the other surface. In the present invention, it is preferred that the nitride semiconductor layer does not form a continuous surface with the side faces of the substrate in the same direction. In the present invention, light is concentrated in the nitride semiconductor layer. When an empty space is created at the outer side portion of the bonding surface between the nitride semiconductor and the substrate (as illustrated in the figure), the change in refractive index in this portion will increase and tend to direct the light toward the The return surface of the light-emitting surface is preferably formed by wet etching using orthophosphoric acid to form the inclined surface. Because wet etching will cause a thermal equilibrium reaction, and this will not be the opposite of 1342613
t I I '. r * 晶造成損傷，且不可能降低結晶的穿透度。 當讓一具有主要包含（0001)面的表面之氮化物半 層接受使用正磷酸的溼式飩刻時，因爲其容易在該側 形成一相對於該表面呈傾斜且等於（1 -10-1 )平面之 面，從原子程度及引起高反射性的觀點來看，該切割 平坦。The t I I '. r * crystal causes damage and it is impossible to reduce the crystallinity of the crystal. When a nitride half layer having a surface mainly containing a (0001) plane is subjected to wet etching using orthophosphoric acid, since it is easy to form a slope on the side with respect to the surface and is equal to (1 -10-1) The plane of the plane is flat from the viewpoint of atomic degree and high reflectivity.
對本發明之氮化物半導體發光元件的基材來說， 用多種已知的基材材料而沒有任何限制 > 其包括氧化 0 晶，諸如藍寶石單晶（Al2〇3 :A平面，C平面，Μ平谊 平面）及尖晶石單晶（MgA丨2〇4)及Sic單晶。在上述歹IJ ' 其它基材材料當中，藍寶石單晶或SiC單晶特別優良 帶一題的是，該基材之平面方向無特別限制。欲使用 • 材可僅爲一基材或可爲已提供斜角的基材。 爲了達成將以氮化鎵爲基礎的化合物半導體堆曼 基材上之目的，可使用在日本專利案號3 02 6 0 8 7及 Η E I 4 - 2 9 7 0 2 3中所揭示出的低溫緩衝方法，及揭示在 鲁 2 0 0 3 - 2 4 3 3 0 2中的晶格失配結晶磊晶生長技術（稱爲播 法（S Ρ ))。 當使用低溫緩衝方法或晶格失配結晶磊晶生長 (諸如S Ρ )時，該在基材上之以氮化鎵爲基礎的化合物 體（其堆疊作爲下層）爲未摻雑形式或經低程度G aN摻 如5χ1〇17 /立方公分）爲較佳。該下層之厚度範圍在1 微米爲較佳及範圍在5至1 5微米爲更佳。在該下層上 η型G a Ν，以接觸該電極且對其供應電流。在該η型For the substrate of the nitride semiconductor light-emitting element of the present invention, various known substrate materials are used without any limitation > including oxidized crystals such as sapphire single crystal (Al2〇3: A plane, C plane, Μ Pingyi plane) and spinel single crystal (MgA丨2〇4) and Sic single crystal. Among the above other 基材IJ' other substrate materials, the sapphire single crystal or the SiC single crystal is particularly excellent. The planar direction of the substrate is not particularly limited. The material to be used may be only one substrate or may be a substrate that has been provided with an oblique angle. In order to achieve the purpose of a gallium nitride-based compound semiconductor stack substrate, the low temperature disclosed in Japanese Patent No. 3 02 6 0 8 7 and Η EI 4 - 2 9 7 0 2 3 can be used. The buffering method, and the crystal lattice misalignment crystal epitaxial growth technique (referred to as the sowing method (S Ρ )) in Lu 2 0 0 3 - 2 4 3 3 2 2 . When a low temperature buffering method or lattice mismatched crystal epitaxial growth (such as S Ρ ) is used, the gallium nitride-based compound body on the substrate (whose stack is used as the lower layer) is undoped or low The degree of G aN doping is preferably 5 χ 1 〇 17 /cm ^ 3 ). The thickness of the lower layer is preferably in the range of 1 μm and more preferably in the range of 5 to 15 μm. An n-type G a Ν is formed on the lower layer to contact the electrode and supply current thereto. In the n-type
導體 面上 切割 面將 可使 物單 Ϊ及R 舉的 。附 的基 在該 JP-A JP-A 種方 技術 半導 雜（諸 至20 生長 GaN -12- 1342613 生長期間，對該生長層提供η型摻雜物直到其劑量範圍爲 ΙχΙΟ18 /立方公分至ΙχΙΟ19 /立方公分。通常選擇Si或Ge 作爲該η型摻雜物。已知該摻雜可爲二種型式’一產生自 均勻摻雜的結構及一產生自週期性重覆低摻雜層與高摻雜 層的結構。後者之間歇性摻雜在抑制生長結晶時發生凹坑 特別有效。 在一接觸層與一發光層間插入一 η包覆層爲較佳。例 如，該η包覆層可由AlGaN、GaN或InGaN形成。當其由 • InGaN形成時，顯而易見地，該層之組成物的能帶隙比 ' InGaN活性層大爲較佳。該η包覆層的載體濃度可與該n 接觸層相同或可較大或較小。在該包覆層上的發光層爲一 量子井結構較佳。此結構可爲僅具有一層井層的簡單量子 井結構或具有複數層井層之多重量子井結構。特別是，該 多重量子井結構優良，因爲當該元件結構使用以111族氮化 鎵爲基礎的化合物半導體時，其能結合高輸出及低操作電 壓。此外，在多重量子井結構的實例中，全部井層（活性層） ® 及阻障層在本專利說明書中將共同指爲發光層。 Ρ型層的厚度範圍通常爲0.01至1微米，且其由一鄰 近活性層的Ρ包覆層及一意欲形成正電極的Ρ接觸層而形 成。該Ρ包覆層例如由GaN或A】GaN形成，且摻雜Mg作 爲P摻雜物。已知該負電極可爲多種組成物及結構。可使 用這些相當熟知的負電極而沒有任何限制。至於注定接觸 該η接觸層之負電極用的接觸材料，不僅可使用a 1、Ti、 Ni及Au’而且亦可使用Cr、W及V»顯而易見地，整個 1342613 ' 負電極可由多層結構形成且可提供黏合性質。特別是，在 最外邊表面塗佈上A u係有利於促進黏合。 同樣地’該正電極已相當熟知可爲多種組成物及多種 結構。可使用這些相當熟知的正電極而沒有任何限制。例 如1該透明正電極材料可包括 Pt、Pd、Au' Cr、Ni、Cu 及C o。再者’已知經形成部分氧化結構之正電極可提高該 電極被光通過的性質。除了上述舉出的材料外’可使用 R h、A g及A 1作爲該反射型正電極材料。 φ 爲了藉由分割該氮化物半導體來達成讓該各別元件的 半導體層側面呈傾斜之目的’首先形成一光阻圖案以便覆 蓋該P電極、該η電極及該曝露的p型層。該光阻可爲正 型或負型。根據普通程序’使用一具有適合於曝露各別元 ' 件（其包含該Ρ電極及η電極）的界限之圖案的光遮罩’在 各別元件上進行微影蝕刻。當該光阻能覆蓋上述提及的電 極與ρ型層且能區別各別元件時，並非總是需要進行微影 蝕刻。該膜厚範圍在0 ·】微米至2 0微米較佳。若膜厚過薄 • 時，該薄膜可能在溼式蝕刻程序期間遭剝除。若其過厚時， 此過量將可能難以提供微影蝕刻的解析度，而不易識別出 下面圖案。膜厚範圍在0 · 5微米至1 〇微米有利且在1微米 至5微米的範圍內更有利。 使用雷射來進行移除該氮化物半導體層（直至到達基 材）較佳。可在本發明的範圍內使用任何型式之雷射加工機 器，只要其可形成能將半導體晶圆分割成各別晶片的延伸 隙縫。於此，特別可使用能形成連續線、虛線及次級破裂 1 1342613 • 形狀的分離槽紋之c Ο 2雷射、Y A G雷射 '準分子雷射及脈 衝雷射。在上述舉出的雷射當中’脈衝雷射爲較佳。 可使用波長範圍193奈米至1064奈米的雷射。藉由選 擇一波長比該氮化物半導體的吸收終端還短之雷射（2 66奈 米或3 5 5奈米爲較佳），可將加工位置限制在雷射照射的位 置處，因爲該氮化物半導體的吸收係數高達〗〇5 /公分。其 頻率範圍在1赫茲至100000赫茲爲較佳，3 0000赫茲至 7 0 0 0 0赫茲更佳。該雷射輸出最小爲較佳。因爲過量的雷 φ 射輸出會對該基材或化合物半導體給予熱損傷，此輸出爲 2瓦或較小爲較佳，1瓦或較小爲更佳。 所照射的雷射束之點形狀可爲圓形、橢圓形或實質上 '矩形。橢圓形比圓形佳。特別在橢圓形的實例中，將其形 •狀調整成長軸在加工方向爲較好。此調整能夠將切割表面 製成比圓形實例更清晰，且可提高加工速度。在圓形實例 中，其直徑範圍在〇 · 1至20微米爲較佳，1 〇微米或較小爲 特佳。束長爲10微米或更長爲較佳，20微米或更長爲更 • 佳。藉由適當地選擇該雷射用的光學系統，使其能在寬度 小於1 〇微米下執行該製程及提高該元件的產率。 雷射加工的深度可在1微米或更深的範圍內任意選 擇。若加工深度過淺’將可能造成該經分割的元件變形。 當從該化合物半導體層中形成該延伸隙縫時，若在該基材 上之延伸隙縫的深度爲5微米或更深時，可抑制該經分割 的元件變形。深度1 0微米或更深爲更優良。 雖然該延伸隙縫的切面形狀可爲方形、u字、V字形 1342613 • 等等之任何一種’但V字形較佳，因爲當將該元件分割 晶片時’從V字形的頂端鄰近產生破裂，能夠實質上垂 切割。 藉由將一氣體吹到該雷射加工部分上可冷卻該經加 的化合物半導體層之鄰近部分，以減低在該化合物半導 層上的熱損傷。再者，因爲在加工期間所產生的熔融物 被吹開而沒有黏附至該V字形的斜面，故可獲得一乾淨 鮮明的V形槽紋。因此，容易進行分割成各別晶片。可 9 用氧、氮、氦、氬、氫等等任何一種作爲吹到該雷射加 部分上之氣體而沒有任何限制。同時引用氣、氮及氮作 • 該氣體時’在冷卻效應上特別高，成本便宜的氮爲較佳 使用來噴灑氣體的噴嘴頂端直徑越小越好。因爲其可進 •局部噴灑及加速該氣體流動速度。 其它方面，可使用切片機的機械設備來達成該分割 各別元件。於此實例中，可藉由合適地選擇欲使用來切 的刀片且將刀片插入該基材的量減少至最大可能程度， Φ 防止各別元件蒙受碎屑及破裂。雖然此插入基材的量可 I微米至5 0微米之範圍內任意選擇，所選擇的範圍爲j 米至2 0微米爲較佳及該範圍爲1微米至1 0微米爲更佳 隨後，讓該分割區域接受溼式蝕刻’以形成一凹部分（延 隙縫）。使用正磷酸來進行該溼式蝕刻。將正磷醆放在一 含於指定的加熱元件中之燒杯中’且在其中將其加熱 1 0 0。(：至4 0 0 °C的溫度範圍。若該加熱溫度過低，蝕刻速 將降低。若其過高’該遮罩將蒙受剝離。將此溫度選擇 成 直 工 體 可 及 使 工 爲 c 行 成 割 來 在 微 〇 伸 包 至 度 在 1342613 150°C至3 0 0 °c之範圍內爲較佳及在18(TC至24〇°C的範圍 爲更佳，使其能調和足夠的蝕刻速度與遮罩的抵抗性。 所分割的各別元件之形狀形成長方形（包括方形及矩 形）有利。因爲用來分割元件的畫線器會進行機械掃描，而 直線掃描能增高劃線速度。在一個方向上完成劃線後，在 另一方向中進行劃線。若無特別理由的話，從一個方向轉 9〇度至另一方向。隨著此’可獲得一方形元件。 所分割的各別元件之形狀形成六角形亦有利》在由本 發明所形成的表面上，容易發展出等於（1-10-1)平面的切割 面而具有六個相等平面。因此，該元件將形成具有六角形 形狀。當將該六角形的邊製成與（1-100)平面之方向符合 時，在該傾斜表面形成後，由該切割面形成該元件的側邊， 以使該反射性提高。 爲了獲得六角形元件，在樣品加工臺上不進行直線掃 描，而是對雷射加工機器指示出以適合的間距來進行X - Y 軸方向掃描。因爲在電腦控制下進行該臺之驅動，此操作 容易。 現在，將在下列例示本發明之實例。 實例： 使用藍寶石（Al2〇3)C平面基材作爲該基材。根據揭示 在J P - A 2 0 0 3 - 2 4 3 3 0 2中的程序，在此基材上，藉由週期性 摻雜Ge(直到平均載體濃度1 XI 019 /立方公分），來形成~ 厚度6微米之未摻雜的GaN層及形成一厚度4微米的η型 接觸層；交替堆® —由In〇.iGa〇.9N形成且厚度爲！2.5奈米 1342613 • 之η包覆層、—由GaN形成且厚度爲16奈米之阻障層及 —由In〇.2GaQ.8N形成且厚度爲2.5奈米的井層，直到總共 5循環；經由A1N緩衝層，相繼堆疊一多重量子井結構之 發光層（其提供一阻障層、一由In0.07Gac.93N形成且厚度爲 10奈米的p包覆層及一由摻雜Mg(濃度8χ1019 /立方公分 -1)的Al0.03Ga0.97N形成且厚度爲0.15微米之Ρ接觸層）’ 以在該基材上形成一氮化物半導體層。 使用熟知的微影蝕刻及RI Ε來處理該氮化物半導體層 # 之表面，以曝露出各別元件的界限1 0 4部分及η型接觸層 部分。於此化合物半導體的ρ接觸層上，在規定位置處堆 疊一層，其可使用熟知的微影蝕刻及剝落製程，從該Ρ接 觸層邊，依所提及的順序來製造出一由Pt及Au所形成的 透明正電極1 0 2。隨後，使用熟知的微影蝕刻及剝落製程， 在該半導體邊製造出黏合墊。將在微影蝕刻中所使用的光 阻塗佈至第4圖之晶圓（其已在各別元件上完成形成該電極 之製程）。藉由重覆該微影蝕刻，僅曝露出該元件的界限。 ® 在第4圖中，參考數字10代表發光二極體之集合體、數字 101爲P型墊、數字103爲η型墊及數字105爲一用來移 除氮化物半導體層的線。 使用雷射作爲移除氮化物半導體層（直至到達基材）之 工具。使用具有波長266奈米、頻率50千赫、輸出1.6瓦 及操作速度7 〇毫米/秒之雷射，在該基材中形成一深度達 2〇微米的槽紋。接著，將該臺旋轉90°，在Υ軸方向中類 似地形成該延伸隙縫。在其中形成該延伸隙縫後，將該基 -I 8 - 1342613 材浸入容納有正磷酸的石英燒杯中2 0分鐘’使用加熱裝置 來加熱至2 4 0 °C ，以進行溼式蝕刻。由此蝕刻所移除的氮 化物半導體層量爲深度5 · 2微米。在超音波中沖洗該已接 受溼式蝕刻的基材及氮化物半導體層，且使用有機液體進 一步清洗，以移除由該光阻所形成的蝕刻遮罩。 在該基材邊上，對已經接受蝕刻處理的基材及氮化物 半導體層進一步硏磨減薄’直到厚度爲8 0微米。之後，以 一折斷裝置將它們分割成各別元件。當使用積分球來測試 # 該經分離的元件之輸出時’發現該輸出爲7. 1毫瓦。當由 S Ε Μ來觀察該元件側面時，發現該氮化物半導體層之側面 可在相對於該氮化物半導體層的側面之法線與相對於該基 ^ 材的主平面之法線間形成1 3 0度的傾斜角度0 (如闡明在 '第1圖中）。 比較例： .爲了比較的目的，下列引用〜省略溼式蝕刻之實例。 在與實例1相同的條件下進行氮化物半導體層之生長及氮 • 化物半導體層之移除。在其中形成該延伸隙縫後，將該晶 圓分離成各別元件而沒有進行任何溼式蝕刻。該經分割的 元件之側面與該基材的主平面呈垂直。當評估該經分離的 兀件之輸出時，發現該輸出爲5 . 1毫瓦。已發現該元件的 側面具.有實質上與該垂直折斷的基物.之側面相同的法線。 因爲本發明之氣化物半導體發光元件僅在形成延伸隙 縫的操作期間承受不明顯的損傷且氧有高光引出效率，其 可使用作爲高亮度的發光二極體。 -19- 1342613 【圖式簡單說明】 第I圖爲一光在本發明所涵蓋的氮化物半導體元件中 前進之實例的圖式截面圖。 第2圖爲將在該氮化物半導體層與該發光層間之側面 製成垂直的圖式截面圖。 第3圖爲一光在習知的氮化物半導體元件中前進的實 例之圖式截面圖。 第4圖爲在實例1中所製造的氮化物半導體發光二極 體之平面圖。 【元件符號說明】 10 發 光 二 極 體 之 集 合 體 10 1 P : 型 塾 1 02 透 明 正 電 極 1 03 η型 塾 1 04 基 材 界 限 1 05 線 20 1 基 材 202 半 導 體 層 203 光 前 進 方 向 的 箭 號 線 204 相 對 於 該 半 導 體 層 的 側 面 之法線 205 相 對 於 該 基 材 的 側 面 之 法 線 206 發 光 層 -20-The cutting surface on the conductor surface will allow the object to be lifted and R. The attached group is provided with an n-type dopant to the growth layer during the growth of the JP-A JP-A compound semiconductor semi-conductive (the growth of GaN -12-1342613 until the dose range is ΙχΙΟ18 / cubic centimeter to ΙχΙΟ19 /cm ^3. Si or Ge is usually selected as the n-type dopant. It is known that the doping can be of two types 'one from a uniformly doped structure and one from a periodic repetitive low doped layer and The structure of the highly doped layer. The intermittent doping of the latter is particularly effective in suppressing the occurrence of pits during growth crystallization. It is preferred to insert a n-cladding layer between a contact layer and a light-emitting layer. For example, the n-cladding layer may be AlGaN, GaN or InGaN is formed. When it is formed of • InGaN, it is apparent that the composition of the layer has a band gap larger than that of the 'InGaN active layer. The carrier concentration of the η cladding layer can be in contact with the n The layer is the same or can be larger or smaller. The luminescent layer on the cladding layer is preferably a quantum well structure. The structure can be a simple quantum well structure with only one well layer or multiple quantum with multiple layers of well layers. Well structure. In particular, the multiple quantum The structure is excellent because when the element structure uses a compound semiconductor based on Group 111 gallium nitride, it can combine high output and low operating voltage. Further, in the example of a multiple quantum well structure, all well layers (active layers) ® and the barrier layer will be collectively referred to as a light-emitting layer in this patent specification. The thickness of the germanium layer is usually in the range of 0.01 to 1 micrometer, and it consists of a tantalum coating adjacent to the active layer and a crucible intended to form a positive electrode. The germanium cladding layer is formed, for example, of GaN or A]GaN, and is doped with Mg as a P dopant. It is known that the negative electrode can be of various compositions and structures. These relatively well-known negative electrodes can be used. There is no limitation. As for the contact material for the negative electrode that is destined to contact the η contact layer, not only a 1, Ti, Ni and Au' but also Cr, W and V» can be used. Obviously, the entire 1342213' negative electrode It can be formed by a multilayer structure and can provide adhesive properties. In particular, coating the outermost surface with the A u system is advantageous for promoting adhesion. Similarly, the positive electrode is quite well known as a plurality of compositions and various structures. These fairly well-known positive electrodes can be used without any limitation. For example, the transparent positive electrode material may include Pt, Pd, Au' Cr, Ni, Cu, and C o. Further, a positive electrode known to form a partially oxidized structure is known. The property of the electrode to be light-transmitted can be improved. In addition to the materials mentioned above, R h, A g and A 1 can be used as the reflective positive electrode material. φ is achieved by dividing the nitride semiconductor. The side of the semiconductor layer of the other element is inclined to form a photoresist pattern to cover the P electrode, the n electrode and the exposed p-type layer. The photoresist may be positive or negative. A photomask having a pattern suitable for exposing the boundaries of the respective elements (which include the germanium electrode and the n electrode) is lithographically etched on the respective elements. When the photoresist can cover the above-mentioned electrode and p-type layer and can distinguish the respective components, it is not always necessary to perform lithography etching. The film thickness is preferably in the range of 0 μm to 20 μm. If the film thickness is too thin, the film may be stripped during the wet etching process. If it is too thick, this excess may make it difficult to provide the resolution of the lithographic etching, and the underlying pattern is not easily recognized. The film thickness is advantageously in the range of from 0.5 μm to 1 μm and is more advantageous in the range of from 1 μm to 5 μm. It is preferred to use a laser to remove the nitride semiconductor layer (up to the substrate). Any type of laser processing machine can be used within the scope of the present invention as long as it can form an extended slit that can divide the semiconductor wafer into individual wafers. Here, in particular, it is possible to use a c Ο 2 laser, a Y A G laser 'excimer laser and a pulsed laser which can form a continuous line, a broken line and a secondary rupture 1 1342613. Among the above-mentioned lasers, a 'pulse laser is preferred. A laser with a wavelength range of 193 nm to 1064 nm can be used. By selecting a laser having a shorter wavelength than the absorption terminal of the nitride semiconductor (2 66 nm or 355 nm is preferred), the processing position can be limited to the position of the laser irradiation because of the nitrogen The absorption coefficient of the semiconductor is as high as 〇5 / cm. The frequency range is preferably from 1 Hz to 100,000 Hz, and more preferably from 30,000 Hz to 7,000 Hz. This laser output is minimal. Since an excessive amount of lightning ray output imparts thermal damage to the substrate or compound semiconductor, the output is preferably 2 watts or less, more preferably 1 watt or less. The spot shape of the illuminated laser beam can be circular, elliptical or substantially 'rectangular. The ellipse is better than the circle. Particularly in the case of the elliptical shape, it is preferable to adjust the shape of the growth axis in the machine direction. This adjustment makes the cut surface clearer than the circular example and increases the speed of the process. In the case of a circular shape, the diameter is preferably in the range of 〇 1 to 20 μm, and particularly preferably 1 〇 micrometer or less. A bundle length of 10 μm or longer is preferred, and a thickness of 20 μm or longer is more preferred. By appropriately selecting the optical system for the laser, it is possible to perform the process at a width of less than 1 Å and to increase the yield of the element. The depth of laser processing can be arbitrarily selected within a range of 1 micron or more. If the machining depth is too shallow, the segmented component may be deformed. When the extended slit is formed from the compound semiconductor layer, deformation of the divided element can be suppressed if the depth of the extended slit on the substrate is 5 μm or more. A depth of 10 microns or more is more excellent. Although the shape of the slit of the extended slit may be square, u-shaped, V-shaped 1342613, etc., but the V-shape is preferable, since the crack is generated from the vicinity of the top end of the V-shaped portion when the element is divided into wafers, Drooping cut. The adjacent portion of the applied compound semiconductor layer can be cooled by blowing a gas onto the laser processed portion to reduce thermal damage on the semiconductive layer of the compound. Further, since the melt generated during the processing is blown off without adhering to the V-shaped bevel, a clean and vivid V-shaped groove can be obtained. Therefore, it is easy to divide into individual wafers. Any one of oxygen, nitrogen, helium, argon, hydrogen, or the like may be used as the gas to be blown onto the laser addition portion without any limitation. At the same time, the use of gas, nitrogen and nitrogen as the gas is particularly high in the cooling effect, and the cheaper nitrogen is preferably used. The smaller the tip diameter of the nozzle for spraying the gas, the better. Because it can be used to locally spray and accelerate the gas flow rate. In other respects, the mechanical components of the microtome can be used to achieve the segmentation of the individual components. In this example, the amount of the blade to be cut can be appropriately selected and the amount of the blade inserted into the substrate can be reduced to the maximum extent possible, Φ preventing the individual components from being subjected to chipping and cracking. Although the amount of the intercalation substrate can be arbitrarily selected from the range of 1 micrometer to 50 micrometers, the selected range is preferably from j to 20 micrometers, and the range is preferably from 1 micrometer to 10 micrometers. The divided region is subjected to wet etching to form a concave portion (a slit). This wet etching is performed using orthophosphoric acid. The phosphorous ruthenium is placed in a beaker contained in a designated heating element and heated therein for 1000. (: Temperature range up to 400 ° C. If the heating temperature is too low, the etching rate will decrease. If it is too high, the mask will be peeled off. This temperature is selected as a straight body and the work is made c It is better to cut into the range of 1342613 150 ° C to 300 ° C and better in the range of 18 (TC to 24 ° ° C, so that it can be adjusted enough Etching speed and resistance of the mask. The shape of each of the divided components is formed into a rectangular shape (including square and rectangular). Because the line drawing device for dividing the component performs mechanical scanning, the linear scanning can increase the marking speed. After the scribing is completed in one direction, the scribing is performed in the other direction. If there is no special reason, turn from one direction to 9 degrees to the other direction. With this, a square element can be obtained. It is also advantageous for the shape of the other element to form a hexagon. On the surface formed by the present invention, it is easy to develop a cut surface equal to the plane of (1-10-1) and have six equal planes. Therefore, the element will be formed with a hexagonal shape. Shape. When the hexagon When the edge is formed in conformity with the direction of the (1-100) plane, after the inclined surface is formed, the side of the element is formed by the cut surface to improve the reflectivity. In order to obtain a hexagonal component, at the sample processing table Instead of performing a linear scan, the laser processing machine is instructed to scan the X-Y axis at a suitable pitch. This operation is easy because the drive is driven under computer control. Now, the following examples will be An example of the invention. Example: A sapphire (Al2〇3) C-plane substrate is used as the substrate. According to the procedure disclosed in JP-A 2 0 0 3 - 2 4 3 3 2 2, on this substrate, By periodically doping Ge (up to an average carrier concentration of 1 XI 019 /cm ^ 3 ) to form an undoped GaN layer of 6 μm thickness and forming an n-type contact layer with a thickness of 4 μm; alternating stack ® - by In 〇.iGa〇.9N is formed and has a thickness of !2.5 nm 1342613 • η cladding layer, a barrier layer formed of GaN and having a thickness of 16 nm and formed of In〇.2GaQ.8N and having a thickness of 2.5 Nano well layer up to a total of 5 cycles; successive stacks via A1N buffer layer a light-emitting layer of a multiple quantum well structure (which provides a barrier layer, a p-cladding layer formed of In0.07Gac.93N and having a thickness of 10 nm and a doped Mg (concentration of 8 χ 1019 /cm ^ 3 -1) a layer of Al0.03Ga0.97N formed of a thickness of 0.15 μm) to form a nitride semiconductor layer on the substrate. The nitride semiconductor layer is processed using well-known photolithography etching and RI Ε a surface for exposing the boundary portion 104 of the respective component and the n-type contact layer portion. On the p-contact layer of the compound semiconductor, a layer is stacked at a prescribed position, and a well-known photolithography etching and peeling process can be used. From the side of the tantalum contact layer, a transparent positive electrode 1 0 2 formed of Pt and Au was fabricated in the order mentioned. Subsequently, an adhesive pad is fabricated on the semiconductor side using well known lithography etching and stripping processes. The photoresist used in the lithography etching is applied to the wafer of Fig. 4 (which has completed the process of forming the electrode on the respective elements). By repeating the lithography etch, only the boundaries of the component are exposed. In Fig. 4, reference numeral 10 denotes an assembly of light-emitting diodes, numeral 101 denotes a P-type pad, numeral 103 denotes an n-type pad, and numeral 105 denotes a line for removing a nitride semiconductor layer. A laser is used as a tool for removing the nitride semiconductor layer (up to the substrate). Using a laser having a wavelength of 266 nm, a frequency of 50 kHz, an output of 1.6 watts, and an operating speed of 7 mm/sec, a groove having a depth of 2 μm was formed in the substrate. Next, the stage is rotated by 90°, and the extended slit is similarly formed in the z-axis direction. After the extended slit was formed therein, the base -I 8 - 1342613 was immersed in a quartz beaker containing orthophosphoric acid for 20 minutes' using a heating device to be heated to 240 ° C for wet etching. The amount of the nitride semiconductor layer removed by this etching was a depth of 5.2 μm. The wet-etched substrate and the nitride semiconductor layer are rinsed in an ultrasonic wave and further cleaned using an organic liquid to remove an etch mask formed by the photoresist. On the side of the substrate, the substrate and the nitride semiconductor layer which have been subjected to the etching treatment are further honed and thinned until the thickness is 80 μm. Thereafter, they are divided into individual components by a breaking device. When the integrating sphere is used to test # the output of the separated component, the output is found to be 7.1 milliwatts. When the side surface of the element is observed by S Ε , it is found that the side surface of the nitride semiconductor layer can be formed between the normal to the side surface of the nitride semiconductor layer and the normal to the main plane of the substrate. The tilt angle of 3 degrees is 0 (as illustrated in '1'). Comparative Example: For the purpose of comparison, the following references - omit the example of wet etching. The growth of the nitride semiconductor layer and the removal of the nitride semiconductor layer were carried out under the same conditions as in Example 1. After the extended slit was formed therein, the crystal was separated into individual members without any wet etching. The sides of the segmented element are perpendicular to the major plane of the substrate. When evaluating the output of the separated element, the output was found to be 5.1 milliwatts. It has been found that the side mask of the element has substantially the same normal to the side of the vertically broken substrate. Since the vaporized semiconductor light-emitting element of the present invention is subjected to insignificant damage only during the operation of forming the extended slit and oxygen has high light extraction efficiency, it can be used as a high-luminance light-emitting diode. -19- 1342613 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an example of advancement of light in a nitride semiconductor device covered by the present invention. Fig. 2 is a cross-sectional view showing a side surface between the nitride semiconductor layer and the light-emitting layer in a vertical direction. Fig. 3 is a cross-sectional view showing an example of advancement of light in a conventional nitride semiconductor device. Fig. 4 is a plan view showing a nitride semiconductor light-emitting diode fabricated in Example 1. [Description of component symbols] 10 Assembly of light-emitting diodes 10 1 P : Type 塾1 02 Transparent positive electrode 1 03 η-type 塾1 04 Substrate limit 1 05 Line 20 1 Substrate 202 Semiconductor layer 203 Arrow of light forward direction The line 204 is opposite to the normal 205 of the side of the substrate relative to the normal of the side of the substrate.