95399 21868twf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種晶片模組以及具有此晶片模組 的顯示裝置，且特別是有關於一種具有導熱墊(thermal pad) 的晶片模組以及具有此晶片模組的顯示裝置。 【先前技術】 隨著電腦性能的大幅進步以及網際網路、多媒體技術 的高度發展，目前影像資訊的傳遞大多已由類比轉為數位 傳輸。為了配合現代生活模式，視訊或影像裝置之體積曰 漸趨於輕薄。配合光電技術與半導體製造技術所發展之平 面式顯示器（Flat Panel Display，FPD)，例如液晶顯示裝 置、有機電激發光顯示器（0rganic Electr〇_Luminescent Display，OELD)或是電漿顯示器（Piasma Dispiay pand, PDP)’已逐漸成為顯示器產品之主流。 現今使用者對於平面顯示裝置的畫質細緻度要求越來 越尚。因此，液晶顯示裝置的製造技術必須不停地朝向解 析度同以及反應時間短的方向邁進。然而，要提高液晶顯 不裝置的解析度意味著驅動顯示裝置的晶片封裝體中的晶 片必須在短時間内處理大量的數據。因此，晶片的負擔加 重，也同時凸顯晶片散熱的重要性。工業界中所做的應變 是使科熱塾貼附在晶片封裝體上，以加逮將晶片運 异日守所產生的熱散逸至外界，進而保護晶#不會因過妖而 損壞。 95399 21868twf.doc/n 然而，為了節省製造成本而盡量縮小晶片與晶片封裳 體的體積已是現今一大趨勢。當晶片封裝體的體積越小， V熱塾所能貼附在晶片封裝體上的面積也隨之減小，因此 容易造成導熱墊的散熱效果不良，而發生熱過度集中使晶 片損壞的現象。如此一來，更會導致使用此晶片封裝體之 液晶顯示装置無法正常運作。為了改善導熱墊散熱效果不 佳的問題’可以改用導熱係數較高的材質來製作導熱墊。 但是，使用導熱係數較高的材質會使導熱墊的成本增加數 倍以上，並不符合成本效益。 因此，要在不增加成本負擔的前提之下，使導熱墊即 ，貼附在小體積的晶片封裴體上也可擁有良好的散熱效外 汽為產業所需解決的重要課題之一。 【發明内容】 本發明之目的是提供一種晶片模組， 體内之晶片運作時散熱不良的問題。 本發明之另—目的是提供—種顯示裝 龄枯沾a μ “ 以解決晶片封裝95399 21868twf.doc/n IX. Description of the Invention: [Technical Field] The present invention relates to a wafer module and a display device having the same, and more particularly to a thermal pad A wafer module and a display device having the same. [Prior Art] With the dramatic advancement of computer performance and the high development of Internet and multimedia technologies, most of the current image information transmission has been converted from analog to digital. In order to cope with the modern lifestyle, the size of video or video devices has become thinner and lighter. Flat Panel Display (FPD) developed by optoelectronic technology and semiconductor manufacturing technology, such as liquid crystal display device, organic electroluminescent display (Organic Electr〇_Luminescent Display, OELD) or plasma display (Piasma Dispiay pand) , PDP)' has gradually become the mainstream of display products. Nowadays, the user's requirements for the fineness of the picture display device are becoming more and more demanding. Therefore, the manufacturing technology of the liquid crystal display device must constantly move toward the same degree of resolution and short reaction time. However, to increase the resolution of the liquid crystal display device means that the wafer in the chip package for driving the display device has to process a large amount of data in a short time. Therefore, the burden on the wafer is increased, and the importance of heat dissipation from the wafer is also highlighted. The strain made in the industry is to attach the Kee 塾 to the chip package to absorb the heat generated by the wafer transport to the outside world, and thus protect the crystal # from being damaged by the demon. 95399 21868twf.doc/n However, it has become a major trend to minimize the size of wafers and wafers in order to save manufacturing costs. When the volume of the chip package is smaller, the area that the V enthalpy can be attached to the chip package is also reduced, so that the heat dissipation effect of the thermal pad is liable to be poor, and the phenomenon that the heat is excessively concentrated causes the wafer to be damaged. As a result, the liquid crystal display device using the chip package is not functioning properly. In order to improve the heat dissipation effect of the thermal pad, it is possible to use a material with a high thermal conductivity to make a thermal pad. However, using a material with a higher thermal conductivity will increase the cost of the thermal pad by more than several times and is not cost effective. Therefore, under the premise of not increasing the cost burden, the thermal pad, that is, attached to the small-sized wafer package body, can also have good heat dissipation effect. The external steam is one of the important problems to be solved by the industry. SUMMARY OF THE INVENTION It is an object of the present invention to provide a wafer module in which the problem of poor heat dissipation during operation of the wafer in the body. Another object of the present invention is to provide a display age of a μ "to solve the chip package
95399 21868twf.doc/n 膜或金屬箔接觸晶片封裝體。 在本發明之晶片模組的一實施例中，上述之承載基板 為玻璃基板、印刷電路板、捲帶自誠合基板膜基板。 本發明另提出-麵示裝置，包括顯示面板以及電性 連接至顯示面板的晶片模組。其中，晶片模組包括：承載 基板、晶片封襄體以及導熱墊。％載基板電性連接至顯示 面板，而晶片封裝體配置於承載基板上並與其電性連接， 導熱墊配置於晶片封裝體上。另外，導熱墊包括：第一軟 性導熱膜以及金屬箔。金屬箔配置於第—軟性導熱獏上， 金屬ϋΙ之導熱係數大於第一軟性導熱膜之導熱係數。其 中，第一軟性導熱膜或金屬箔接觸晶片封裝體。 在本發明之顯示裝置的一實施例中，上述之承載基板 為印刷電路板、捲帶自動貼合基板或薄膜基板。 在本發明之顯示裝置的一實施例中’上述之顯示面板 包括液日日顯示面板、電毁顯不面板(plasma displaying panel, PDP)或有機電激發光顯示面板(organic electro-luminance displaying panel, OELD panel)。 在本發明之顯示裝置的一實施例中，上述之顯示裝 置，更包括一背光模組，其中顯示面板配置於背光模組上 且為液晶顯示面板。 本發明更提出一種顯示裝置，包括顯示面板、晶片封 裝體以及導熱墊。顯示面板至少具有一承載基板，而晶片 封裝體配置於承載基板上並與其電性連接，且導熱墊配置 於晶片封裝體上。此外，導熱墊包括第一軟性導熱膜以及 95399 21868twfdoc/n '其中’金屬箱配置於第—軟性導熱膜上，金屬结 之¥熱係數大於第1性導熱膜之導熱係數。其中，第一 軟性導熱膜或金；| _接觸晶片封裝體。 在本發明之晶>{模組與顯示裝置的—實施例t，上述 之V熱塾更包括-第二軟性導熱膜，金職配置於第一軟 性導熱膜與第二軟性導熱膜之間。在此實施例中，金屬结 例如為平整的或具有多個皺摺。 在本發明之晶片模組與顯示裝置的一實施例中，上述 之金屬结包括銀结、鋁落、銅箱或鋁合金络。 在本發明之晶片模組與顯示裝置的一實施例中，上述 之金屬箔之厚度例如介於0 08毫米至02毫米。 在本％明之a曰片模組與顯示裝置的—實施例中，上述 之第一軟性導熱膜之導熱係數例如介於〇.5瓦特/公尺_度 (W/m.K)至 2,2 瓦特/公尺-度(w/m.K)。 在本發明之晶片模組與顯示裝置的一實施例中，上述 之第一軟性導熱膜之材質包括一矽膠基材與一金屬化合 物，金屬化合物散佈於矽膠基材中。 在本發明之顯示裝置的一實施例中，上述之承載基板 例如為玻璃基板。 在本發明之顯示裝置的一實施例中，上述之顯示面板 包括液晶顯示面板、電激顯示面板或有機電激發光顯示面 板。 在本發明之顯示裝置的一實施例中，上述之顯示裝 置，更包括一背光模組，其中顯示面板配置於背光模組上 95399 21868twf.doc/n 且為液晶顯示面板。 在本發明之晶片模組與顯示裝置中’是由金屬箱搭配 軟性導熱膜以做為導熱墊，此導熱墊具有較佳的導熱效能 且不會造成成本過度增加，並提升晶片模組與顯示裝置的 可靠度。 、、、、 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細 明如下。 、D 【實施方式】 圖1A為應用本發明之一實施例之晶片模組的顯示襞 置之上視示意圖，而圖1B、1(：及m為應用於圖认之^ 不裝置之本發明三種實施例之晶片模組的立體示意圖。姓 先參考圖1A’顯示裝置1〇包括顯示面板2〇、晶片模級『 以及將顯示面板20與晶片模組3〇電性連接的可彎折 =路板40〇晶片模組30例如由承載基板32與配置於^ 土板32上的多個晶片封裝體所組成。 晶片封裝體50内的晶片（未繪示）可處理大 知訊號以驅動顯示面板2G ’使其進行顯示。隨著 ^裝置1G的品質不斷提升，晶片封裝體％内的 因=在_的散熱問， 里數據日卞，其晶片大量生熱的問題。 95399 21868twf.d〇c/n 請參照圖IB，晶片槿绐Tnn a 1 Η 1〇Λ 衩、，且I00a包括承載基板110、晶 片封裝體120以及導埶替^ ηΛ … 其中’晶片封裝體120配 置於承載基板110上並应发泰 Μ曰ϋ Μ壯Μ '、/、电性連接，而導熱墊130配置 於晶片封裝體120上。此夕卜i. 此夕卜，導熱墊130包括第一軟性導 熱膜13Ga以及金射g 13% 。㈣广’ 導熱膜130a上，且金屬溶道 爱，白〗30b之導熱係數大於第一軟性 導熱膜130a之導熱係數。复中筮-,_ 至屬、泊130b接觸晶片封裝體12〇，本實施例中是由第一軟 性導熱膜1施賴晶料魏12G。在此，晶#封裝體12〇 可以疋經過封裝而在晶片（die)外部包覆有封裝膠體 (moldmg Compound)(未標示）者，或者晶片封裝體12〇也可 以是未經封裝而直接將晶片的背部露出者。 金屬箱130b可以是銀箱、紹羯、銅箱或紹合金镇。 其中，鋁合金馆之材質可以是Al5〇52或其他鋁合金。本實 施例中所舉的金屬箔l3〇b並非用以限定本發明，金屬箔 130b的材質還可以依照使用者需求而採用其他金屬或是 合金。另外，金屬箔130b之厚度較佳是介於〇〇8毫米至 0.2毫米。一般來說，金屬具有較好的導熱性質，因此很 適合作為導熱與散熱之材料。然而，金屬塊材十分笨重且 4貝錢Φ貝，右採用金屬塊材為導熱與散熱之材料會使成本 提高許多。此外’金屬塊材要與晶片之表面完全接觸並不 容易，會導致熱阻存在金屬塊材與晶片之間。所以，本發 明利用金屬箔130b配置於導熱墊130中，可以達到良好= 導熱效能並且不會使成本過度增加。此外，薄片狀金屬$ 95399 21868twf.doc/n 1 30b具有優良的變形能力，將此金屬箔貼附於第一軟性導 熱膜130a上不會影響導熱墊13〇原有的優良彈性。因此， 導熱墊130可以緊密的貼附於晶片封裝體120上，而使導 熱效能更好。 第一軟性導熱膜13〇a之導熱係數例如介於〇.5瓦特/ 公尺-度(W/m.K)至2.2瓦特/公尺•度(W/m.K)。相較於第一 軟性導熱膜130a，常見的金屬的導熱係數如表1所示，皆 高出數倍至數十倍’甚至有百倍之上。因此，在導熱墊130 中配置金屬箔130b可提高導熱墊130的導熱效率。 表1 金屬種類 導熱係數(W/m.K) 純金 318 純銀 417 純錄 91.7 純鋁 220 純銅 392.9 鐵 71.8 鋁 5052 137 IS 6061 155.8 SUS430 25.6 SUS304 16.3 習知技術中，僅採用軟性導熱膜做為導熱墊時，會因 軟性導熱膜之導熱係數較小而發生熱無法快速散逸甚至集 中在晶片區域的現象。本實施例中，晶片封裝體120内的 95399 21868twf.doc/n 晶片（未繪示)所產生的熱玎藉由高導熱係數之金屬箔130b 而快速傳導至第一軟性導熱膜13〇a的絕大部分區域，因此 可避免熱量集中在配置有晶片的區域而導致該區溫度過 高’進而大幅降低因溫度過高可能導致晶片損毀的機率。 實際上，導熱墊可以均勻的疏導熱量’所以在配置有導熱 墊之晶片的區域所產生的熱會散布至晶片周圍，而可能使 晶片周圍之溫度提高，但是在配置有晶片的區域之溫度則 有明顯的下降。 在一實施例中，第一軟性導熱膜130a之材質包括一 矽膠基材與一金屬化合物，金屬化合物散佈於矽膠基材 中。在一較佳實施例中，金屬化合物是純金屬或是合金， 並以顆粒或是粉末狀態而散佈於矽膠材質中。此外，其中 金屬粉末的種類及梦膠基材與金屬化合物的比例可視實際 需求而決定。由於空氣是不良導體，若晶片封裝體12〇與 導熱墊130間留有空隙’會造成散熱不良的情形。主要由 矽膠基材製成的第一軟性導熱膜13〇a富有彈性，故可以盥 晶片封裝體120緊密地貼合以有效散熱。 ^ H接著’ 5月參考圖1C，在本實施例之晶片模組100b中， 2金屬泊130b接觸晶片封裝體12〇,而第—軟性導熱膜 小，置於金屬泊130b上。由於金屬㉟13〇b之厚度很 a性不曰片封裝體]2〇保持緊密接觸，不會因貼 σ f•生不佳而導致散熱效率降低。 接著，請參考圖1D，右士 — ^ 導熱塾m除了前述之晶片模組職中’ 心义系一軟性導熱膜13〇a與金屬箔 1342605 95399 21868twf.doc/n 130b外’更包括一第二軟性導熱膜i3〇(^第二軟性導熱膜 130c的材質與第一軟性導熱膜13〇a之材質相似，而金屬 结130b配置於第—軟性導熱膜13〇a與第二軟性導熱膜 130c之間。值得注意的是，本實施例之金屬箔13〇b具有 多個皺摺’但金屬箔130b也可如圖1B所示為平整的或是 其他樣式。具有多個皺摺的金屬箔130b可使金屬箔130b 的面積增大’進而提高導熱墊132的導熱效能。 在一實施例中’承載基板110為玻璃基板、印刷電路 板、捲帶自動貼合基板、薄膜基板或是其他承載基板。換 言之’晶片封裝體120與承載基板no的接合可採用晶片_ 電路板接合(chip on board，COB)、晶片-玻璃接合(chip on glass，COG)、捲帶自動接合（tape automatic bonding， TAB)、晶片-薄膜接合(chip on film，COF)或是其他接合技 術。 圖2為本發明一實施例之顯示裝置的剖面示意圖。請 參考圖2，顯示裝置2〇〇包括顯示面板2〗〇以及電性連接 至顯示面板210的晶片模組220。其中，晶片模組220包 括：承載基板222、晶片封裝體〗2〇以及導熱墊13〇。承載 基板222電性連接至顯示面板210，而晶片封裝體12〇配 置於承載基板222上並與其電性連接，導熱墊13〇則配置 於晶片封裝體120上。其中，晶片封裝體12〇及導熱墊13〇 與前述實施例相同，而圖1D之導熱墊132也可應用於本 ^施例中以取代導熱墊130,在此並不另作描述。既然本 實施例之顯示裝置200使用了具有如前述實施例之導熱墊 13 1342605 95399 21868twf.doc/, 130的晶片模組220’則可避免晶片封裝體120内的晶片因 過熱而損壞’以藉此提升顯示裝置2〇〇的可靠度。 與圖1B之承載基板11〇相似，承載基板222可為印 刷電路板、捲帶自動貼合基板或薄膜基板。除了晶片封裝 體120以外，還可將例如電容、電阻之被動元件或其他主 動元件設置於承載基板222上。晶片模組220例如是利用 可彎折之軟性電路板（Flexible printed circuit, FPC) 240 或 是其他方式與顯示面板210電性連接。如圖2所示，晶片 模組220可以設置在顯示裝置2〇〇的背面，以縮小顯示裝 置200的邊寬而達到美觀的需求。 此外，顯示面板210例如是液晶顯示面板、電漿顯示 面板、有機電激發光顯示面板或其他種類的顯示面板。當 顯示面板210為穿透式或半穿透半反射式的液晶顯示面板 時，顯示裝置200更包括一背光模組23〇,而顯示面板21〇 配置於背光模組230上。背光模組230用於提供面光源， 以使顯示面板210能進行影像的顯示。當顯示面板21〇為 反射式液晶顯示面板、電漿顯示面板、有機電激發光顯示 面板或其他可自行發光之顯示面板時，則不需使用背光模 組 230。 ' 圖3為本發明另一實施例之顯示裝置的剖面示意圖。 凊參考圖3，顯示裝置300包括顯示面板310、晶片封裝體 12〇以及導熱墊130。顯示面板31〇至少具有一承載基板 3l〇a’而晶片封裝體120配置於此承載基板31〇a上並與其 電性連接，導熱墊130則配置於晶片封裝體12〇上。其中， 14 1342605 95399 21868twf.doc/n 晶片封裝體120及導熱墊130與前述實施例相同，而圖id 之導熱塾132也可應用於本實施例中以取代導熱塾130， 在此並不另作描述。 同樣，本實施例之顯示裝置300因使用了如前述實施 例之導熱墊130’故可避免晶片封裝體120因過熱而損壞， 並藉此提升顯示裝置300的可靠度。 在本實施例中，承載基板310a為玻璃基板，但承載 基板310a也可以是其他種類之承載基板。此承載基板31〇a 是顯示面板310的一部份，而晶片封裝體12〇直接電性連 接至承載基板310a’這樣可以簡化製程、降低成本並減少 顯示裂置300的厚度。 與前一實施例相同，顯示面板310可以是液晶顯示面 板、電漿顯示面板、有機電激發光顯示面板或其他種類的 顯示面板。此外，當顯示面板310為液晶顯示面板時，顯 示面板310更包括上基板31〇b以及液晶層31〇c。另外， 當顯示面板310為穿透式或半穿透半反射式的液晶顯示面 板時，顯示裝置300可更包括一背光模組33〇，而顯示面 板310配置於背光模組330上。 綜上所述，在本發明之晶片模組以及應用此晶片模組 所製成的顯示裝置中’是採用具有高導熱係數之金屬箔來 提升導熱墊之散熱效率。藉此，可有效避免晶片在運作時 所產生的熱集中在局部區域的現象而導致晶片損毁，進而 提升晶片榼組與顯示裝置的可靠度且成本低廉。同時，由 於晶片在運作時可獲得較佳的散熱，故可提升晶片之運算 15 1342605 ‘ 95399 21868twf.doc/n 能力而不需擔心因過熱而損毀。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明’任何所屬技術領域中具有通常知識者，在不 脫離本發明之精神和範圍内，當可作些許之更動與潤飾， 因此本發明之保護範圍當視後附之申請專利範圍所界定者 為準。 【圖式簡單說明】 圖1A為應用本發明之一實施例之晶片模組作為驅動 晶片模組的顯示裝置之上視示意圖。 圖IB、1C及1D為本發明三種實施例之晶片模組的 立體示意圖。 圖2為本發明一實施例之顯示裝置的剖面示意圖。 圖3為本發明另一實施例之顯示裝置的剖面示意圖。 【主要元件符號說明】 10、200、300 :顯示裝置 20、210、310 :顯示面板 30、100a、100b、100c、220 :晶片模組 32 ' 110、222、310a :承載基板 40、240 :軟性電路板 50、120 :晶片封裝體 130、132 :導熱墊 130a :第一軟性導熱膜 16 1342605 95399 21868twf.doc/n 130b :金屬箔 130c :第二軟性導熱膜 230、330 :背光模組 310b :上基板 310c :液晶層95399 21868twf.doc/n Film or foil contact chip package. In an embodiment of the wafer module of the present invention, the carrier substrate is a glass substrate, a printed circuit board, and a tape self-satisfactory substrate film substrate. The invention further provides an area display device comprising a display panel and a wafer module electrically connected to the display panel. The wafer module comprises: a carrier substrate, a wafer package body and a thermal pad. The carrier substrate is electrically connected to the display panel, and the chip package is disposed on the carrier substrate and electrically connected thereto, and the thermal pad is disposed on the chip package. In addition, the thermal pad includes a first flexible thermally conductive film and a metal foil. The metal foil is disposed on the first soft thermal conductive crucible, and the thermal conductivity of the metal crucible is greater than the thermal conductivity of the first flexible thermal conductive film. The first flexible thermal conductive film or metal foil contacts the chip package. In an embodiment of the display device of the present invention, the carrier substrate is a printed circuit board, a tape automatic bonding substrate or a film substrate. In an embodiment of the display device of the present invention, the display panel comprises a liquid day display panel, a plasma display panel (PDP) or an organic electro-luminance display panel. OELD panel). In an embodiment of the display device of the present invention, the display device further includes a backlight module, wherein the display panel is disposed on the backlight module and is a liquid crystal display panel. The present invention further provides a display device including a display panel, a wafer package, and a thermal pad. The display panel has at least one carrier substrate, and the chip package is disposed on the carrier substrate and electrically connected thereto, and the thermal pad is disposed on the chip package. In addition, the thermal pad comprises a first flexible thermal conductive film and a metal box disposed on the first flexible thermal conductive film, and the thermal coefficient of the metal junction is greater than the thermal conductivity of the first thermal conductive film. Wherein, the first flexible thermal conductive film or gold; | _ contacts the chip package. In the crystal of the present invention, the embodiment of the module and the display device, the above-mentioned V heat includes a second flexible heat conductive film, and the gold member is disposed between the first flexible heat conductive film and the second flexible heat conductive film. . In this embodiment, the metal knot is, for example, flat or has a plurality of wrinkles. In an embodiment of the wafer module and display device of the present invention, the metal junction comprises a silver junction, an aluminum drop, a copper box or an aluminum alloy. In an embodiment of the wafer module and display device of the present invention, the thickness of the metal foil is, for example, between 0 08 mm and 02 mm. In the embodiment of the present invention, the thermal conductivity of the first flexible thermal conductive film is, for example, between 〇5 watts/meter _ degrees (W/mK) to 2,2 watts. / metric - degrees (w / mK). In an embodiment of the wafer module and the display device of the present invention, the material of the first flexible heat conductive film comprises a silicone substrate and a metal compound, and the metal compound is dispersed in the silicone substrate. In an embodiment of the display device of the present invention, the above-mentioned carrier substrate is, for example, a glass substrate. In an embodiment of the display device of the present invention, the display panel comprises a liquid crystal display panel, an electro-acoustic display panel or an organic electroluminescent display panel. In an embodiment of the display device of the present invention, the display device further includes a backlight module, wherein the display panel is disposed on the backlight module 95399 21868twf.doc/n and is a liquid crystal display panel. In the wafer module and the display device of the present invention, the metal case is matched with a soft thermal conductive film as a thermal conductive pad, and the thermal pad has better thermal conductivity without excessive cost increase, and the wafer module and the display are improved. The reliability of the device. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the invention. [FIG. 1A] FIG. 1A is a top view of a display device of a wafer module to which an embodiment of the present invention is applied, and FIGS. 1B and 1(: and m are the inventions applied to the device. A schematic view of a wafer module of three embodiments. Referring first to FIG. 1A, the display device 1 includes a display panel 2, a wafer die level, and a bendable connection for electrically connecting the display panel 20 and the die module 3 The wafer 40 chip module 30 is composed of, for example, a carrier substrate 32 and a plurality of chip packages disposed on the earth plate 32. A wafer (not shown) in the chip package 50 can process the signal to drive the display. The panel 2G' is displayed. As the quality of the device 1G continues to increase, the cause of the chip package %==the heat dissipation in the _, the data is in the future, and the wafer has a large amount of heat generation. 95399 21868twf.d〇 C/n Referring to FIG. 1B, the wafer 槿绐Tnn a 1 Η 1〇Λ 衩, and I00a includes a carrier substrate 110, a chip package 120, and a conductive package. The chip package 120 is disposed on the carrier substrate 110. On the top should be issued Thai Μ曰ϋ Μ Μ Μ ', /, electrical connection The thermal pad 130 is disposed on the chip package 120. Further, the thermal pad 130 includes the first soft thermal conductive film 13Ga and the gold g 13%. (4) on the thermal film 130a, and the metal channel The thermal conductivity of the first soft thermal conductive film 130a is greater than that of the first soft thermal conductive film 130a. The composite medium-, _ to genus, pois 130b contact chip package 12 〇, in this embodiment is the first soft thermal conductive film 1 Lai crystal material Wei 12G. Here, the crystal package 12 can be packaged and coated with a moldmg compound (not labeled) on the outside of the die, or the chip package 12 can also be The back of the wafer is directly exposed without being packaged. The metal box 130b may be a silver box, a Shaoguan, a copper box or a Shaoxing town. The material of the aluminum alloy hall may be Al5〇52 or other aluminum alloy. The metal foil 13b is not used to limit the present invention, and the metal foil 130b may be made of other metals or alloys according to the needs of the user. In addition, the thickness of the metal foil 130b is preferably between 〇〇8. Mm to 0.2 mm. Generally speaking, metal It has good thermal conductivity, so it is very suitable as a material for heat conduction and heat dissipation. However, the metal block is very bulky and has 4 bucks Φ shell, and the right metal block for heat conduction and heat dissipation will increase the cost a lot. It is not easy for the metal block to completely contact the surface of the wafer, which may cause thermal resistance to exist between the metal block and the wafer. Therefore, the present invention utilizes the metal foil 130b to be disposed in the thermal pad 130, which can achieve good = thermal conductivity and not In addition, the flaky metal $95399 21868twf.doc/n 1 30b has excellent deformability, and attaching the metal foil to the first flexible heat conductive film 130a does not affect the original thermal pad 13 Excellent elasticity. Therefore, the thermal pad 130 can be closely attached to the chip package 120 to make the heat conduction performance better. The thermal conductivity of the first flexible thermal conductive film 13a is, for example, between 〇5 watts/meter-degree (W/m.K) to 2.2 watts/meter-degree (W/m.K). Compared with the first flexible thermal conductive film 130a, the thermal conductivity of a common metal is as shown in Table 1, which is several times to several tens of times' or even hundreds of times higher. Therefore, disposing the metal foil 130b in the thermal pad 130 can improve the heat conduction efficiency of the thermal pad 130. Table 1 Metal Type Thermal Conductivity (W/mK) Pure Gold 318 Sterling Silver 417 Pure Record 91.7 Pure Aluminum 220 Pure Copper 392.9 Iron 71.8 Aluminum 5052 137 IS 6061 155.8 SUS430 25.6 SUS304 16.3 In the conventional technology, only the soft thermal conductive film is used as the thermal pad Due to the small thermal conductivity of the flexible thermal conductive film, the phenomenon that heat cannot be quickly dissipated or even concentrated in the wafer region occurs. In this embodiment, the heat generated by the 95399 21868 twf.doc/n wafer (not shown) in the chip package 120 is quickly conducted to the first flexible thermal conductive film 13A by the high thermal conductivity metal foil 130b. In most areas, heat can be prevented from being concentrated in the area where the wafer is placed, resulting in excessive temperature in the area, which greatly reduces the probability of wafer damage due to excessive temperature. In fact, the thermal pad can evenly dissipate the amount of heat conduction. Therefore, the heat generated in the area of the wafer in which the thermal pad is disposed can be spread around the wafer, and the temperature around the wafer can be increased, but the temperature in the region where the wafer is disposed is There is a significant drop. In one embodiment, the material of the first flexible thermal conductive film 130a comprises a silicone substrate and a metal compound dispersed in the silicone substrate. In a preferred embodiment, the metal compound is a pure metal or an alloy and is dispersed in a silicone material in a particulate or powder state. In addition, the type of metal powder and the ratio of the base material to the metal compound can be determined according to actual needs. Since air is a poor conductor, if there is a gap between the chip package 12A and the thermal pad 130, heat dissipation may occur. The first flexible thermal conductive film 13A made mainly of a silicone substrate is elastic, so that the chip package 120 can be closely attached to effectively dissipate heat. ^H Then, referring to FIG. 1C in May, in the wafer module 100b of the present embodiment, the metal mooring 130b contacts the chip package 12A, and the first flexible thermal conductive film is small and placed on the metal pouch 130b. Since the thickness of the metal 3513〇b is very a-slip, the package is kept in close contact, and the heat dissipation efficiency is not lowered due to poor σ f•birth. Next, please refer to FIG. 1D, the right-handed-^ heat-conducting 塾m in addition to the aforementioned wafer module, the 'heart of a soft thermal conductive film 13〇a and metal foil 1342605 95399 21868twf.doc/n 130b' includes a The material of the second flexible heat conductive film 130c is similar to that of the first flexible heat conductive film 13a, and the metal junction 130b is disposed on the first flexible heat conductive film 13a and the second flexible heat conductive film 130c. It should be noted that the metal foil 13〇b of the present embodiment has a plurality of wrinkles, but the metal foil 130b may also be flat or other pattern as shown in FIG. 1B. The metal foil having a plurality of wrinkles 130b can increase the area of the metal foil 130b to further improve the thermal conductivity of the thermal pad 132. In one embodiment, the carrier substrate 110 is a glass substrate, a printed circuit board, a tape automated bonding substrate, a film substrate, or other carrier. In other words, the bonding of the chip package 120 to the carrier substrate no can be performed on a chip-board (COB), a chip-on-glass (COG), or a tape automatic bonding (tape automatic bonding). TAB), wafer - FIG. 2 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. Referring to FIG. 2, the display device 2 includes a display panel 2 and an electrical connection. The wafer module 220 includes a carrier substrate 222, a chip package body 2, and a thermal pad 13. The carrier substrate 222 is electrically connected to the display panel 210, and the chip package 12 is mounted on the display module 210. The 〇 is disposed on the carrier substrate 222 and electrically connected thereto, and the thermal pad 13 is disposed on the chip package 120. The chip package 12 and the thermal pad 13 are the same as the previous embodiment, and the thermal pad of FIG. 1D 132 can also be applied to the present embodiment to replace the thermal pad 130, which is not described herein. Since the display device 200 of the present embodiment uses the thermal pad 13 1342605 95399 21868twf.doc/ as in the previous embodiment, The wafer module 220' of 130 can prevent the wafer in the chip package 120 from being damaged by overheating, thereby improving the reliability of the display device 2. The carrier substrate 222 can be similar to the carrier substrate 11A of FIG. 1B. A printed circuit board, a tape reel, or a film substrate. In addition to the chip package 120, a passive component such as a capacitor or a resistor or other active component may be disposed on the carrier substrate 222. The wafer module 220 may be utilized, for example. A flexible printed circuit (FPC) 240 or other means is electrically connected to the display panel 210. As shown in Fig. 2, the wafer module 220 can be disposed on the back side of the display device 2 to reduce the width of the display device 200 to achieve aesthetic requirements. Further, the display panel 210 is, for example, a liquid crystal display panel, a plasma display panel, an organic electroluminescence display panel, or other types of display panels. When the display panel 210 is a transmissive or transflective liquid crystal display panel, the display device 200 further includes a backlight module 23A, and the display panel 21A is disposed on the backlight module 230. The backlight module 230 is configured to provide a surface light source to enable the display panel 210 to display images. When the display panel 21 is a reflective liquid crystal display panel, a plasma display panel, an organic electroluminescent display panel, or other self-illuminating display panel, the backlight module 230 is not required. 3 is a cross-sectional view showing a display device according to another embodiment of the present invention. Referring to FIG. 3, the display device 300 includes a display panel 310, a chip package 12A, and a thermal pad 130. The display panel 31A has at least one carrier substrate 31a', and the chip package 120 is disposed on the carrier substrate 31A and electrically connected thereto, and the thermal pad 130 is disposed on the chip package 12A. Wherein, the chip package body 120 and the thermal pad 130 are the same as the previous embodiment, and the heat conductive crucible 132 of FIG. id can also be used in the embodiment to replace the heat conduction crucible 130, and there is no other difference here. For description. Also, the display device 300 of the present embodiment can avoid damage of the chip package 120 due to overheating by using the thermal pad 130' as in the foregoing embodiment, and thereby improve the reliability of the display device 300. In this embodiment, the carrier substrate 310a is a glass substrate, but the carrier substrate 310a may be other types of carrier substrates. The carrier substrate 31A is a part of the display panel 310, and the chip package 12 is directly electrically connected to the carrier substrate 310a', which simplifies the process, reduces the cost, and reduces the thickness of the display crack 300. As in the previous embodiment, the display panel 310 may be a liquid crystal display panel, a plasma display panel, an organic electroluminescent display panel, or other types of display panels. In addition, when the display panel 310 is a liquid crystal display panel, the display panel 310 further includes an upper substrate 31〇b and a liquid crystal layer 31〇c. In addition, when the display panel 310 is a transmissive or transflective liquid crystal display panel, the display device 300 may further include a backlight module 33A, and the display panel 310 is disposed on the backlight module 330. In summary, in the wafer module of the present invention and the display device fabricated by using the wafer module, a metal foil having a high thermal conductivity is used to improve the heat dissipation efficiency of the thermal pad. Thereby, the phenomenon that the heat generated by the wafer during operation is concentrated in a local area can be effectively prevented, resulting in wafer damage, thereby improving the reliability and low cost of the wafer stack and the display device. At the same time, since the chip can obtain better heat dissipation during operation, the operation of the chip can be improved 15 1342605 ‘ 95399 21868twf.doc/n capability without fear of being damaged by overheating. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a top plan view of a display device to which a wafer module according to an embodiment of the present invention is applied as a driving chip module. IB, 1C and 1D are perspective views of wafer modules in accordance with three embodiments of the present invention. 2 is a cross-sectional view of a display device in accordance with an embodiment of the present invention. 3 is a cross-sectional view showing a display device according to another embodiment of the present invention. [Main component symbol description] 10, 200, 300: display device 20, 210, 310: display panel 30, 100a, 100b, 100c, 220: wafer module 32' 110, 222, 310a: carrier substrate 40, 240: soft Circuit board 50, 120: chip package 130, 132: thermal pad 130a: first flexible thermal film 16 1342605 95399 21868twf.doc / n 130b: metal foil 130c: second flexible thermal film 230, 330: backlight module 310b: Upper substrate 310c: liquid crystal layer
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