TWI342582B - Method of surface texturizing - Google Patents

Description

1342582 1 Λ 玖, DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION Embodiments of the present invention generally relate to the use of a beam of electromagnetic radiation to modify the surface of a material. More specifically, embodiments of the present invention relate to a method of using an electron beam to adjust the surface of a component used in a process chamber to provide a textured surface on the chamber component. [Previous Tech Street] As the performance of integrated circuit devices is reduced in size, the manufacture of these devices becomes more susceptible to the reduced yield due to contamination. Therefore, it is necessary to make the contamination more controlled to a greater extent than previously thought. Contamination of the IC device may result from spurious particles slamming the substrate, such as during film deposition, etching, or other semiconductor manufacturing processes. In general, the fabrication of an integrated circuit device includes the use of a reaction chamber such as a physical vapor deposition (PVD) and a sputtering reaction chamber, a chemical vapor deposition (CVD) reaction chamber, a plasma etching reaction chamber, and the like. During the deposition and etching processes, the material tends to condense from the gaseous state to various internal surfaces of the reaction chamber to form a solid 14 present on the surface of the reaction chamber. This condensed foreign matter accumulates on the surface of the reaction chamber and tends to separate or peel off from the inner surface between or during the wafer processing sequence. A separate foreign matter may then impact and contaminate the wafer substrate and the devices thereon. Contaminated devices often have to be discarded, thus reducing the manufacturing yield of the process. 5 1342582 In order to prevent condensation from separating outside the surface of the process chamber, a surface texture may be provided to the inner surface to allow the condensed foreign matter formed on the surfaces to have enhanced adhesion to the surface, and thus may be less Separate and contaminate the wafer substrate. Current methods for providing a surface texture to the surface of a reaction chamber include "bead blasting". The blasting method comprises spraying hard particles onto the surface to roughen the surface. Alternatively, a surface texture can be applied to the surface by applying a coating to the surface, for example, by using an arc coating method (arc). Spray) a thin aluminum coating deposited. However, these and other common methods used to adjust the surface in the process chamber are sometimes ineffective in creating sufficient adhesion between the condensate and the surface of the chamber. In order to prevent problems associated with separated foreign matter, the surface of the reaction chamber needs to be frequent, and sometimes a lengthy cleaning step to remove the condensate from the surface of the reaction chamber. In addition, no matter how many times the cleaning is performed, in some cases, contamination from substances separated from the separation will still occur. Therefore, there is a need to reduce the contamination of materials from the surface of the process chamber, and to develop a method for promoting the adhesion of the condensate to the surface of the process chamber. SUMMARY OF THE INVENTION The present invention generally provides a method for providing a surface texture to a worksheet. The method includes providing a workpiece to a texturing reaction chamber day - a magnetic energy beam is directed across the surface of the workpiece to form a plurality of features thereon. The features formed are selected from the group consisting of depressions, protuberances, and combinations thereof. The present invention generally provides a method of providing a surface texture to the surface of a workpiece. The method includes providing a workpiece to a texturing reaction chamber and scanning the surface of the workpiece with an electron beam to form a plurality of features thereon selected from the group consisting of depressions, protrusions, and combinations thereof. The present invention also provides a method of reducing contamination in a process chamber. The method includes scanning an electromagnetic energy beam through one or more process chamber component surfaces to form a plurality of features thereon. The features formed are selected from the recesses ' protrusions, and combinations thereof. The method further includes placing the one or more reaction chamber components into a process chamber and beginning a process sequence within the process chamber. [Embodiment] Fig. 1 shows a schematic sectional view of a surface texturing apparatus 100 which can be used to adjust the surface of a workpiece 104. The surface texturing device 1〇〇 typically includes a column 120. A biasing cover 116 surrounding a cathode 丨〇 6 is disposed inside the column. The cathode 1 〇 6 may be, for example, a filament containing a material such as tungsten. A high voltage cable 122 is coupled to the cathode 106 and is coupled to a high voltage power supply to the cathode 1 〇 6 and the anode 108. Separate from the cathode 106 and below the cathode crucible 6 are an anode 108' and two pairs of high speed bias coils ((1 is 16 (^1), a via 118). Formed within the anode 10, a fast focus coil 110, which is generally annular in shape and concentric with the column 12, is disposed under the anode 108 via 1342582. The two pairs of high speed bias coils 1 12a, 1 12b are present below the fast focus coil 110. Connected to the column 120 and below it is a working reaction chamber 114 having an upper surface 11 4t. The working chamber typically contains a substrate support 140. The substrate support 140 can be coupled to an actuating device 142, such as an actuator or rotating rod that can transfer the workpiece 104 or rotate the workpiece 104 along one or more axes of rotation to move the substrate support 140. Device 142 moves the substrate relative to electrical beam 102. Electromagnetic beam 102 can be, for example, an electron beam. The substrate support 140 can further include a heating element 150, such as a resistive heater or thermoelectric device - disposed at anode 108 And fast The compartments 128 between the focusing coils 110 are generally separated by a column of tubes 2, so that the reaction chamber 114 can be maintained at a different pressure than the portion of the column 120 located on the isolation valve 128. A pump 1 24 'e. The diffusion pump or a turbomole pump is connected to the column ι20 through a valve 126. The pump 124 is used to evacuate the column 12. Typically, a vacuum pump 130 is connected to the reaction chamber 114 through an isolation valve in Evacuation of the reaction chamber 114. Examples of electron beam devices that may be used or that may be adapted for use in the processes described herein include Precision Technologies from Enfield, Connecticut, or Water Beach, from the Canadian province of Cabs. Electron Beam of Cambridge Vacuum Engineering Although the first field specifically shows a surface texturing apparatus including an electron beam, it is within the scope of the invention to use any electromagnetic wave or particle beam, for example, Proton beam, neutron beam, x beam, laser beam, arc beam, etc. The use of the term electromagnetic beam is not meant to be limited to charged particle beams, but rather to include Any form of focusing energy that is moved to the workpiece, such as an electron beam, a proton or neutron beam, an X-ray, a high-density optical ray (such as a laser), or an arc-type process (such as electrical discharge machining (E DM), etc.). The surface texturing apparatus typically includes means for controlling and focusing the particular energy beam on the surface of the workpiece. The particular means for controlling and focusing the energy beam typically depends on the particular type of electromagnetic radiation used. A variety of methods for providing a surface texture to the surface of the workpiece 104 are described in the 3A, 3B, 3C, 3D, 3E, and 3F circles. More specifically, FIG. 3A depicts a series of method steps 300 beginning at step 3〇1 and proceeding to step 304, wherein a workpiece 1〇4 is provided to a surface texturing reaction, eg, first The reaction chamber 114 of the figure. The 3B circle describes a process as in the 3A circle, but adds a step in which the workpiece 1〇4 is preheated before undergoing the texturing process. Figure 3C depicts a series of steps 3 of the method as in Figure 3A, but with the addition of a step in which the workpiece 1〇4 is relieved of stress prior to step 304, and a step 3〇7 in which the workpiece is accepted Preheat before the texture process. The 3d circle describes a series of method steps 3〇〇 as in the 3A, but adds a step 302 in which the workpiece 1() 4 is relieved of stress before the step 3()4. The preheat step and stress relief step can be performed in a reaction chamber or the same reaction chamber separate from the texturing process. Figure 3E depicts a series of steps as in step 3A, step 00, adding a step 31, wherein after the texturing process is completed in step 9 zen 31, the workpiece is relieved of stress to eliminate during the texturing process. Any stress that occurs or remains afterwards. In other embodiments of the invention, the step 311 may also be added in other method steps 300 as described in the 3b, 3c, 3D and 3F circles to eliminate the application of texture by the workpiece.

The stress caused by the process, or the residual stress in the work piece. Figure 3F depicts a series of method steps 3, as in Figure 3A, but with the addition - step 312' where the texturing process is chemically cleaned after the texturing process is completed in step 31 to reduce or prevent contamination Advance to the future process and promote the adhesion of the second material to the work piece. In other embodiments of the invention, step 312 may also be added to other method steps 300 as described in Figures 3B, 3C, 3D and 3E to reduce or prevent contamination effects that the work piece will be used. The future process and promote the adhesion of the second material to the work piece. The workpiece typically contains a metal such as a metal or metal alloy, a terracotta material, a polymeric material, a composite, or a combination thereof. In one embodiment, the workpiece contains metal selected from the group consisting of steel, non-recorded steel, button, town, titanium, copper, aluminum, nickel, aluminum oxide, aluminum nitride, tantalum oxide, tantalum carbide, sapphire (Ah). 〇 3), and combinations thereof. In one embodiment, the workpiece comprises a metal alloy, such as an austenitic type stainless steel, an iron-nickel-chromium alloy (such as Inconel® alloy), a nickel-chromium-molybdenum-tungsten alloy (such as Hastelloy®), a copper-zinc alloy, and chromium. Copper alloy (e.g., 5% or 1% chromium with balanced copper), or the like. In another embodiment, the workpiece contains quartz. The working piece may also contain a polymer such as P〇lyimide (Vespel®), polyetheretherketone (p〇iyEtherEtherKetone), 10 1342582 polyarylate (Ardel@), and the like. . Referring to step 306, reaction chamber 114 and column 120 are evacuated to a pressure in the range of from about 1 X 1 〇 -3 to i χ 1 〇 -5 Torr. In one embodiment, the electromagnetic beam 102 is formed by heating a cathode ι 6 using a resistive heater (not shown) and applying a current to the cathode using a power source (not shown). Electrons are detached from the cathode and accumulated in the biasing cap 116. A negative high voltage potential, referred to as an accelerating power, is applied to the cathode via cable 122 relative to the anode 1 , and a second negative potential, typically less than the accelerating voltage, is applied to the deflector. The accelerating voltage can range from about 5 〇 to about 16 〇 kV. The second potential is used to control the intensity of the electron beam delivered to the workpiece 1〇4. Electrons move through the vias 118 in the anode and begin to shift. A fast focus coil 11 located below the anode 180 focuses the electron beam into a narrow diameter of the workpiece 104, and the high speed bias coils 112 & 112b magnetically deflect the electron beam to the surface of the workpiece 1〇4 In a specific location. Current is applied to the fast focus coil 丨丨〇 and the high speed bias coils 112a, 11b to generate sufficient magnetic flux to manipulate the electron beam 〇2. After passing through the fast focus coil H0 and the high speed bias coils n2a, U2b, the electron beam is supplied to the surface of the workpiece as shown in step 3〇8 of Fig. 3. The distance between the upper surface of the reaction chamber U4 and the workpiece 1〇4 is the working distance of the electron beam. In one embodiment, the working distance is from about 50 mm to about 1000 mm, preferably from about 2 mm to about 35 mm. Referring to Fig. 2, a microprocessor controller 2 is preferably coupled to the poly 11 1342582 focal coil 110 and the high speed biasing coils 112a, 112b. The microprocessor controller 200 can be any type of general purpose computer processor (CPU) that can be used in industrial settings to control various types of reaction chambers and sub-processors. The computer can use any suitable memory, such as random access memory, read only memory, floppy disk, hard disk, or any other type of digital storage, local or remote. Various support circuits (supp〇rt circuits) can be connected to the CPU to support the processor in a conventional manner. The desired software routine can be stored in memory or by a second CPU located remotely. The software program strokes execute the software routine after the workpiece 104 is placed in the reaction chamber n4. When executed, the general purpose computer is converted into a specific process computer that can control the operation of the reaction chamber, so the reaction chamber process That is executed. Alternatively, the process of the present invention can be performed in hardware as a special application integrated circuit or other type of hardware, or a combination of software and hardware. Referring again to Figure 2, a set of instructions is typically encoded on a computer readable medium provided to controller 200. The control signals generated by the execution of the instructions are communicated from the controller 200 through the one or more signal generators 204 to the fast focus coil 110 and the high speed bias coils 112a, 112b. In the embodiment, the instructions are communicated through five signal generators 204. One of the five signal generators is used for fast focus. Two signal generators are used to make the first beam offset, and two signal generators are used as the second beam offset. The signal generators are accompanied by corresponding power amplifiers (not shown). The instructions generally cause the fast focus coil Π〇 and 12 1342582 high speed bias lines 圏n2a, 112b to manipulate the electromagnetic beam 1〇2 by moving the electromagnetic beam to a particular location on the surface of the workpiece to The work piece 104 creates a specific round, spacing, and characteristic properties on the surface. The signal generators are capable of generating signal waveforms of a plurality of frequencies. This allows the position and focus diameter of the electron beam 104 to be quickly adjusted to be a signal from the controller, and features can be snapped onto the surface of the workpiece. The signal controllers 204 are preferably coupled to - or a plurality of power amplifiers, power supplies, etc. (not shown) to facilitate signals at the controller 2 and the focus coil 11A and the high speed bias coil U2a, Communicated between u2b. As shown in step 310 of Figure 3, the electromagnetic beam 1〇2 is scanned through the workpiece! 04 surface. The workpiece 1〇4 can be heated to a preheating temperature before the electromagnetic beam is scanned across the surface of the workpiece 1〇4. This preheating temperature usually depends on the material used to make the workpiece 1〇4. For example, the workpiece 104 can be heated below the workpiece 丨〇4 to begin melting the preheat temperature that undergoes a change in physical state or undergoes a substantially decomposed temperature. The workpiece 丨〇4 can be heated by the heating element #15〇 shown in the figure 帛1. The workpiece can also be heated by scanning the member with the electron beam prior to providing the surface texture to the workpiece. This first scanning step can be performed by rapidly transferring the electron beam on the surface by heating the morphology of the region on which the texturing process is performed. In one embodiment, the electron beam, or other source of energy, process parameters, such as focal length and process power, are variable during the process of preheating the workpiece. The process parameters used during the preheating process may depend on the expected preheat temperature, the speed at which the electron beam is transferred through the surface of the workpiece, and/or the material of the workpiece that is preheated prior to texturing. 13 1342582 The system should not be limited to the amount of time and the high-speed passing of the workpiece 104 in an embodiment, before performing the texturing process. Preheating the workpiece can be accomplished by the use of an energy source 181 disposed in the counter 114 proximate the workpiece 1〇4, which delivers certain types of energy workpieces 104. Examples of typical energy sources well known in the art include, but are, radiant heat lamps, inductive heaters or infrared type electric resistance heaters. In the configuration, the energy source is "turned on" and maintained for a certain period of time or until the workpiece reaches the temperature before starting the physical and chemical process (steps 3 and 7). In another embodiment, the workpiece 1〇4 can be preheated to outside of 114' and then moved into the chamber prior to the texturing process (completed before step 304). A stress relief process can also be performed prior to the preheating and texturing process to prevent deformation of the workpiece 104 due to the relaxation of residual stresses from the prior manufacturing process present in the workpiece. Remaining. It should be produced by a variety of previous production operations, such as grit Masting, which is formed into a process (eg, grinding, patterning, sintering, forming, etc.). The method or process of elimination is familiar in the manufacturing and/or manufacturing of parts and the process method depends on the type of material, the type of process used, and the tolerance to deformation of the workpiece. Referring to Fig. 4, the electron beam travels through the focus line 圏11〇 and the bias coils 112a and 112b. Depending on the signal nature of the signal generator 204 sent from the controller 200, the electron beam 1〇2 scans a particular portion of the surface of the 104. This results in a plurality of features 500 formed on the surface of the workpiece. The features 500 can be a particular geometrical pattern. In one embodiment, the workpiece 1 〇 4 is moved relative to the impacted electromagnetic beam 104 during the texturing process 14 1342582. The workpiece may, for example, be associated with movement of the electromagnetic beam 102 at a speed ranging from about 1 meter per minute to about 1.7 meters per minute. In one embodiment, the workpiece is exposed to the electromagnetic beam 102 during exposure to the electromagnetic beam 102. Rotates along one or more axes of rotation. The axis of rotation < is, for example, perpendicular or parallel to the incident electromagnetic beam. Because of the size or shape of the work piece, it may be impractical for the entity to move or rotate the work piece so that the electromagnetic beam 102 can be moved through the work piece 4 to form the desired texture. Generally, when the electromagnetic beam 102 is generated by an electron beam, an ion beam or an electric arc, a current flows to the workpiece 1〇4. When the electromagnetic beam 1 〇 2 is an electron beam, the current may range from about 15 to about 50 milliamperes (mA), preferably 15 to 40 milliamperes (mA). The energy delivered by the bundle 〇2 can be defined by the power density, which is the average power delivered through a particular cross-sectional area of the surface of the workpiece. In one embodiment, the average power density of the electromagnetic beam 1 〇 2 at a point on the surface of the workpiece that the electromagnetic beam is directed to may be, for example, about 1 〇 4 watts/cm 2 to about! 〇 5 watts / square metre. The electromagnetic beam 1 〇 2 may have a power density at one of the surfaces of the workpiece, e.g., watts per square millimeter. τ 10,000 to approximately The peak power density can be defined as the process setting at which the electromagnetic is at its maximum focus (ie, the smallest possible point size) at a known power setting. It should be noted that the amount of energy required to form the features 500 on the surface of the workpiece may vary depending on the type of energy (e.g., electron beam, laser, etc.) because absorption or energy transfer to the workpiece effectiveness. 15 1342582 The power or energy delivered by the electromagnetic beam to the surface of the workpiece is not expected to result in significant or severe deformation (e.g., melting, hipping, cracking, etc.) of the workpiece. A significant or severe deformation of the work piece can be defined as the work piece being unable to be used for its intended use due to the application of the texturing process. The amount of energy required to cause significant deformation of the workpiece depends on the material used to make the workpiece, the thickness and/or mass of the workpiece near the textured region, the shape of the workpiece (eg, flat, column, etc.) The amount of residual stress in the workpiece, the actual power delivered to the workpiece, the transfer speed of the electromagnetic beam through the workpiece, the density of the textured features on the surface of the workpiece (feature 500), and / or the residence time of the electromagnetic beam at any point of the workpiece. In an embodiment, to prevent thin work pieces or pairs from the texturing process? Significant deformation of the thermal stress sensitive work piece of the burst can be accomplished by increasing the transfer speed of the electromagnetic beam, defocusing the electromagnetic beam during the transit time, or reducing the power of the electromagnetic beam during the transit time 'To minimize the energy transferred to the workpiece that is not used to form features on the surface of the workpiece. To reduce deformation of the workpiece susceptible to deformation (eg, geometrically flat material with high thermal expansion, etc.), in one embodiment, the texturing process may require providing a textured surface to both sides of the workpiece to compensate for The stress caused by the texturing process on one side of the workpiece. In another embodiment, the heating element 150 within the substrate support 140 can be adjusted to cool the workpiece 1 〇 4 during the texturing process to reduce the maximum temperature reached during the texturing process, and/or to allow There is a controlled cooling rate after texturing to prevent or reduce the variation of the workpiece 16 1342582. The heating element 150 in this embodiment can be made of a thermoelectric device, such as from Ter Technology, Inc. of Traverse, Michigan, or Perr〇tec USA, Nashua, New Hampshire (Ferrotec America) Corporation) purchaser. In another embodiment, the workpiece can be clamped to the substrate support 140 to control deformation of the workpiece and prevent deformation of the workpiece during texturing. In general, the electromagnetic beam has a spatial distribution of energy that varies depending on the composition of the workpiece. The electromagnetic beam typically has an energy spatial distribution that varies around an intermediate value that may be, for example, a Gaussian distribution. In other embodiments, the electromagnetic beam may have a non-尚斯 distribution. For example, the electromagnetic beam may have an energy spatial distribution across the diameter of the electromagnetic beam, and its diameter across the electromagnetic beam is substantially more than a Gaussian distribution. Uniform β In one embodiment, about 90% to about 98%, preferably about 98% of the wall energy of the Austenite steel is contained within a beam diameter of about 0.4 mm, while the remaining energy It is outside the diameter of about 0.4 mm, but is usually within 1 mm diameter. In one embodiment, the electromagnetic beam is scanned across the surface of the workpiece by high speed biasing coils n2a, 112b, but without the use of focus coil 11 〇. In this embodiment, the electromagnetic beam remains focused throughout the texturing process. Fig. 5A shows a schematic top view circle of the workpiece surface 1〇4 that has been textured. The electromagnetic beam experiences a first offset using high speed biasing coils 112a, ii2b. The high speed bias coils 112a, 112b move the electromagnetic beam near a plurality of reference points r "the electromagnetic beam is offset between the reference points R by a first offset frequency. The first offset frequency can range from about 23 to about 32 Hertz. Once the electromagnetic beam comes into the vicinity of a reference point, the electromagnetic east undergoes a plurality of second 17 1342582 offsets. Each second offset causes the electromagnetic beam to be moved to a second point, such as R shown in Figure 5A. After undergoing a particular first, the electromagnetic beam acts on the surface of the workpiece 104 to form thereon. The second offset frequency may be in the range of about 400 Hz to 1 Å. In one embodiment, the second offset cheek rate is in the range of from about 2 kHz to about 4 kilohertz. The second offset may be spatially configured such that the features 5〇〇 form a circle 520 near the reference point R. The sleepy case shown in Fig. 5 is a linear pattern. Of course, other round cases are also possible, including rings, ovals, triangles, stars, rings with a center point, and other shapes. The second offset number near each reference point R is variable and may, for example, be up to about 1 〇〇. In one embodiment, the features 5 are formulated into a hexagonal close packed (HCP) pattern, as shown in the 5th C-circle, which may be defined as a feature 500 (shown as A1) The six closely-configured features are surrounded by 5〇〇 (shown as eight 2 to A7). The HCP pattern can be repeated to form a feature array across the surface of the workpiece. The use of a hexagonal close-packed pattern optimizes the feature 5 〇〇 density on the surface to facilitate deposition of material on the surface of the workpiece 1〇4 during use of the texturing workpiece 104 in a subsequent deposition process (described later). Adhesion. The texture density can be defined and measured as a number of features within a surface area of a square centimeter of work piece 104. The texture density can vary depending on the workpiece material, the type of material deposited in the subsequent process, the angle of incidence of the electromagnetic beam, and the size and spacing of each feature, but usually between about 1 per square. Between about 300 features, and preferably between about 18 1342582 points per square meter and about 20 and about 26 features. For example, part number 0020-46649 made of titanium for use in a titanium deposition process, available from Applied Materials, Inc., of Santa Clara, Calif., may have a spacing of about 200 per square centimeter across the textured surface. Between about 260 features. In yet another embodiment, the Applied Material Company part number 0020-4443 8 made of aluminum for use in a pVD crucible or nitride button deposition process may span between about 3 per square centimeter of the textured surface. Between the 〇 and about 50 features. Figure 5B shows a close up top view of the surface of the workpiece 1 〇4 that has been textured. The electromagnetic beam 102 has an electromagnetic beam diameter of 5 〇4. The diameter of the electromagnetic beam diameter 504 at a point where the electromagnetic beam 1 〇 2 contacts the surface of the workpiece 104 may be about 〇 4 mm to about 丨 mm, and preferably about 〇 4 mm in diameter. The electromagnetic beam is focused on the area 5〇2 of the surface of the workpiece 1〇4 and remains focused on the area 502 for a period of time called dwell time. During this dwell time, the electromagnetic beam reacts with a region 502 of the surface of the workpiece 104 to form features thereon. As shown in Fig. 5, the feature thus formed may have a diameter of 5 〇 6 which is substantially the same size as the electromagnetic beam at the point where the electromagnetic beam 1 〇 2 is in contact with the surface of the workpiece 直 2 from the 〇 4 . In general, the residence time of the electromagnetic beam can range from about 〇丨 milliseconds to about 2 milliseconds. The transit time elapsed between each second offset may be from about 1 microsecond to about 50 microseconds. The inventors have found that when such a short transit time is applied to a material such as austenitic steel, there is no need to defocus or reduce the power of the electromagnetic beam from one characteristic to the next. Only the surface exposed to the electromagnetic beam during the electromagnetic beam transit time does not significantly melt, so the features are only formed in those areas where the electromagnetic beam stays. __ After the dwell time has elapsed, the electromagnetic beam 102 is deflected to another area on the surface of the workpiece 1〇4, such as region 510. In an embodiment, the dwell time may be reduced to less than 1 microsecond, such as about 1 microsecond, and/or the transit time may be reduced to less than 1 microsecond to prevent the workpiece from being thin due to geometry. Or deformed by the fragile area of the work piece at the 500's location. In another embodiment, the focus coil 110 rapidly moves the electromagnetic beam 1〇2 into and out of focus to reduce the electromagnetic beam power that strikes the surface of the workpiece 104 during the transit time. In this way, the energy delivered to the surface of the workpiece can be tightly controlled. Similar to the above method, a plurality of features are formed on the surface of the workpiece 1〇4. The plurality of features 5 〇〇 may be depressions, protrusions (ΡΓ - (10) (1)), or a combination thereof. The plurality of features 500 can be formulated to have a pattern of substantially spaced 5〇8 between features 5〇〇. Although 5A, 5B, and 5C illustrate the case of discontinuous features. However, feature 500 can be overlapped or merged with each other. Heavy; eve. Figure 50 shows. In the other two cases, an array of 500 is used to form grooves or lines on the surface of the workpiece, thereby promoting the adhesion of the deposited film. Figure 6 does not show that it has been connected to an electromagnetic beam such as electromagnetic 102.

An overview of one of the surfaces of the workpiece 104 is shown in the figure. As shown in the figure, the 男 男 男 男 她 她 夂 夂 夂 夂 夂 夂 0 0 0 0 0 〆 〆 102 102 102 102 102 102 102 102 102 102 102 102 102 610 610 610 The incident angle system 疋 is an angle between the workpiece 1〇4 and the electromagnetic beam 1〇2 “* 坩 and 炙耵猓010a ten-set ray 610b. The incident angle can be about -45 degrees from 20 1342582 to In about 45 words, the angle of incidence:: feature 500 typically encloses the effect of the electromagnetic beam during the observation of the beam due to the deflection of the electromagnetic beam during the texturing process. This electricity and preferably prevents the inside of the column 1 20 _ Although the inventor specifically explained, the material is ejected outward by boiling of a material heated to 104. The vertical 602 ' is also at 604 °. The recess 602 has a depth of 6 1 2, and the bottom of the recess 602 is Ying Fufan. The inner surface of the range is in the range of two points on the concave surface 622, preferably about _30 degrees to about 3 degrees. The change is measured in relation to the ray 61〇a. Within about 45 degrees, there is a recess 602, and the protrusions 6〇4 are exposed to the body. The shielding column 120 allows the various hardware members to be disengaged from the material that is detached from the surface, so that the incident angle 61〇 is also moved. Having an improved hardware lifetime or the offset of the magnetic beam about the column 12 Smaller, ions move up from the column and damage the cathode 106 and other components. It is not desirable to be limited to the formation of these features, but the letter on the surface of the workpiece 1〇4 and the internal material In some cases higher than the point at which the workpiece is formed. The rapid heating of the workpiece portion causes the material to be formed by the position at which the material is ejected to form a recess that is deposited by the material from which the nozzle is ejected. A surface 622»the recess 602 is defined as a vertical distance from the upper surface 620 of the workpiece 丨04 to the ', from about 0.005 inches to about 0100 inches from about 0001 inches to about 6 inches. Light 614', but preferably between about 0.008 and about 0.089, has an inner diameter 616. The inner diameter 616 is defined as the maximum distance of the table & is recessed or raised with the upper surface 62〇21 1342582 of the workpiece 1〇4 Or, within the scope of the invention, in addition, the surface diameter, and the inner diameter, and the height and the recess of the workpiece may be in contact with, in the case of, or in the case of, between the protrusions or between the depressions. In one embodiment, The depression has a surface Inner diameter 616. In another embodiment, the recess has an inner diameter 161 that is smaller than 614. In an embodiment, the protrusion 6〇4 has a height 618 in the range of about 0.060 inches. And 0.0 02 to about 0.04 6 inches. An example of a size range formed in an aluminum work piece, Applied Materials Inc. 0020-44438, between about 〇〇29 and about 089 089 leaves 6 1 4 Between 〇. 〇丨7 and approximately 46 inches, the height _〇23 to about 0.036 inches between the depths of 612. Another example of a typical size range of feature 500 formed therein is 0020-46649, which is between about 〇〇12 and about 31 inches, 614, between about 〇.0〇2 and about 〇〇〇. The height between 4 miles is 0.0 06 to about 〇·〇ΐ The depth between 1 inch is 61 2. Although Fig. 6 shows a specific texture of the feature, including one or two protrusions 604, the proportions and combinations of only the shapes included in the protrusions having different shapes, depths, and the like may have different contact angles. The protrusions are separated from each other. In one implementation at about 0.0 2 inches. In one embodiment, the Reitz electromagnetic beam can be stopped with a slight offset in the electromagnetic beam to form a non-projective electrical feature on the surface of the workpiece. The surface diameter "larger than the offset 614 during the dwell time" is preferably between about 0.00 2 and preferably between the feature 500 part number, and about one part of the work piece' part number. The surface straightness, and about the depressions 602 and the depressions and protrusions, the depressions may similarly, the difference in the surface or the combination of the distances between the two, the retention of the magnetic beam during the retention time, the resulting shape of the magnetic beam comprising 22 1342582, including, for example, a star , elliptical, rhombic, triangular, pentagonal hexagon, or other polygon. In one embodiment 'using a beam of hard particles ("blasting") at the surface texturing with the electromagnetic beam 102, the workpiece 1〇4 . The particles may comprise, for example, aluminum telluride, garnet, tantalum carbide, or oxidized and may have a particle size of from about 24 to about 80 grit (about 535 microns to about microns). Typically, the "sandblasting" process is carried out at a pressure of about 5 70 psi. The hard particles can be sprayed from a nozzle and can be dried or sprayed as part of a water-like polymer. In other words, the blasting treatment induces a roughness on the surface of the workpiece 1 〇 4 which is better than that of the electricity 102. The sanding treatment also removes any loosely attached material, such as protrusions, formed by the physicochemical process. The roughness formed by the treatment increases the retention and adhesion of the textured member as it deposits on the surface. In addition, sand blasting can be used for these components after use. The blasting treatment removes the material deposited on the member and returns to the surface state initially provided to the member prior to the deposition process. In another embodiment, the workpiece 1〇4 is subjected to chemical roughness after surface texturing. The term chemical roughness should be interpreted broadly and includes, but is not limited to, chemically etching the surface of the member, electrochemically etching the surface, or a combination thereof. The chemically rough process, as described above for sand blasting, is used to form a rough surface that helps promote the deposition of film against the workpiece 104. The method of chemically roughening the surface of the workpiece 104 takes the material from which the workpiece is made, and those skilled in the art of chemical cleaning, metallography, and grinding should be familiar with and understand. The term chemical etching is intended to be broad, and the term is hard and hard dreams* 1 92 to about, the general magnetic beam is blasting, the cleaning is in the process and the component is attached to the chemical composition 23 1342582 'but not limited to A process for removing material from the surface of a workpiece by the use of chemical activities. Examples of typical chemicals that may be used may be aqueous acidic solutions, acids containing, for example, sulfuric acid (H2S04), nitric acid (HN〇3), hydrochloric acid (HC1), or combinations thereof, or aqueous alkaline solutions containing, for example, hydroxide A chemical of potassium (K〇H), ammonium hydroxide (NH4〇H) or a combination thereof. In another embodiment, the process of chemically etching the surface of the workpiece can also be accomplished by the use of a dry etch (plasma etch) process. Dry etching is typically a process that produces a plasma to pressurize or decompose a reactive gas species that reacts with the material and ultimately removes material from the surface of the workpiece. The term electrochemical etching is intended to describe broadly, but not limited to, the process of removing material from the surface of a workpiece by applying an anodic bias to a workpiece associated with another element that acts as a cathode and is also immersed in an electrolyte. An application example of an electrochemical etching process that is applicable to the present invention, which was filed on July 27, 2001, entitled "Electrochemical Rough Aluminium Semiconductor Process Equipment Surface" Patent Application No. 09/91 8,683 (Agent) This is incorporated herein by reference to the extent that it is hereby incorporated by reference to the extent of

The particle contamination side A provides a method of reducing contamination in the process chamber in another embodiment of the invention. In one embodiment, the method mitigates contamination of the substrate provided to the process chamber. In general, the reaction chamber can be any closed or partially closed reaction chamber that may be susceptible to contamination by materials condensing on the surface of the reaction chamber or on the surface of the components within the reaction chamber. In one embodiment 24 1342582, the reaction chamber is a substrate processing chamber. The reaction chamber may be suitable for vacuum processing of semiconductor substrates or glass panels. The wafer processing chamber can be, for example, a deposition reaction chamber. Representative deposition chambers include sputtering, physical vapor deposition (PVD) and ionic metal plasma (IMP) chambers, chemical vapor deposition (CVD) chambers, etching chambers, molecular beam epitaxy (MBE), Atomic layer deposition (ALD) reaction chambers, with the exception of other reaction chambers. The reaction chamber can also be, for example, an etch chamber, such as a plasma etch chamber. Examples of other suitable process chambers include ion implantation reaction chambers, tempering reaction chambers, and other furnace reaction chambers. In a preferred embodiment, the reaction chamber is a substrate processing chamber exposed to one or more vapor phase materials. Figure 7 shows a simplified schematic cross-sectional view of a sputtering reactor 700 in which contamination can be mitigated using the embodiments described herein. The reaction chamber 700 includes a vacuum reaction chamber 716 and a substrate support 736 having an upper surface 736A. The substrate support 736 can be, for example, an electrostatic chuck. The reactor 700 further includes a protective combination 718 and a lifting system 732» - a substrate 720 (e.g., a semiconductor wafer) is disposed on the upper surface 73 6 A of the substrate support 736. In an exemplary configuration, the substrate support 73 6 is connected, for example, using a plurality of screws to a conventional vertical movement lifting system 723. Some hardware such as an intake manifold and/or a vacuum pump is omitted for clarity. The illustrated vacuum reaction chamber 716 includes a cylindrical reaction chamber wall 714 and a support ring 712 disposed at the top of the reaction chamber wall. The top of the reaction chamber is closed with a target plate 706 having an inner surface 7〇6A. The target plate 706 is electrically insulated from the reaction chamber wall 714 by a ring 23 342582 insulating 710 disposed between the target plate 706 and the support ring 712. Typically, to ensure vacuum integrity within the reaction chamber 716, a weft ring (not shown) is used above and below the insulator 71 to provide a vacuum seal. The billboard 706 may be made of a material that will become a deposited species, or it may contain a coating of the deposit. To facilitate the Tibetan key process, a high voltage power supply 702 is coupled to the target 706. The substrate support 736 holds and supports the substrate 720 within the reaction chamber 716. The substrate support 736 may contain one or more electrodes 734 embedded in a support vessel 738. The electrodes are driven by a voltage from a power supply 7〇4 and, in response to a voltage application, the substrate 72 is electrostatically clamped to the support surface of the chuck. The chuck body may contain, for example, a ceramic material. A wall-like cylindrical protective member 742 is disposed on the support ring 712. The cylindrical shape of the protective member 742 is illustrative of a protective member conforming to the shape of the reaction chamber and/or the substrate, and of course, the protective member may be of any shape. The illustrated components may include 0020-45544, 0020-47654, 0020-BW101, 0020-BW3 02, 01 90-1 1 82 1, 0020-44375, 0020-44438 available from Shengta Barbara Applied Materials, California. 0020-43498, 0021-JW077, 0020-19122, 0 0 2 0 - JW 0 9 6, 0 0 2 1 - KS 5 5 6, 0 0 2 0 - 4 5 6 9 5 ° In addition to the protective member 742, The protective combination 718 also includes an annular deposition ring 730 having an inner diameter that is selected to mount the outer periphery of the ring on the edge of the substrate without contacting the substrate. The shield ring is disposed on a pair of quasi-rings 728, and the alignment ring 728 is supported by a flange (not shown) extending from the substrate support 73 6 26 1342582. In addition, other components, such as clamp rings for physical vapor deposition (PVD), can be textured according to the processes described herein and used in applications for inspection herein. The illustrated annular shield ring and/or clamp ring includes 0020-43171 and 0020-46649 available from Shengta Barbara Applied Materials, Inc. » During the sputter deposition process, a process gas system is supplied to the reaction chamber And the power source is supplied to the target plate 706. The process gas system is ignited into a plasma and accelerated toward the coarse plate 706. The process gas boat thus ejects particles from the dry sheet, and the particles are deposited onto the substrate 720, forming a coating of deposited material thereon. While the protective combination 718 typically confines the plasma and sputter particles to a reaction zone 777 'but inevitably, the sputtered particles, initially in an electropolymerized or gaseous state, will condense on the various reaction chamber surfaces. For example, the reduced bond particles may condense on the inner surface 718A of the protective combination 718, on the inner surface 70 6A of the dry sheet 70 6 , on the inner surface 712A of the support ring 712, on the inner surface 730A of the deposition ring 730, As well as other reactions on the interior surface. In addition, other surfaces, such as the upper surface of the substrate support 736, may be contaminated during or between deposition sequences. Generally, the term "inner surface" means any surface having an interface with the reaction chamber 716. The reaction chamber member represents any separable element that is fully or partially housed within a process chamber. The reaction chamber member may be a vacuum reaction to a member', a reaction chamber member disposed within a vacuum reaction chamber, e.g., reaction chamber 716. The condensed material formed on the inner surface of a reaction chamber member typically has only limited adhesion and may detach from the member and contaminate the base 27 1342582 plate 720. In order to reduce the tendency of the coagulated foreign matter to separate from the process chamber components, the reaction chamber components, for example, the protective combination 718, the coffin 7〇6, the support ring 712, the deposition ring 730, the coil (not shown), the coil support ( Not shown), a deposition collimator (not shown), a pedestal 73 8 , an alignment ring 728, a shuter disk (not shown), or a substrate support 736 is provided to a texturing reaction chamber. For example, the working chamber 设备4 of the device 1 . Referring now to Figure 8, a series of method steps 8 开始 begins at step 8 〇 2 and proceeds to step 804 where an electromagnetic energy beam is bounced through - or a plurality of reaction chamber component surfaces to form thereon A plurality of features. These features may be depressions, protrusions, < combinations thereof. The type of features comprising depressions and protrusions thus formed on the surface of the reaction chamber member are as previously described with respect to the work piece 104. In general, step 8〇4 includes the method steps 3〇1 to 31 described in the 3a 3b, 3C, 3D, 3E, and 3F diagrams t. In another embodiment, the method is further included in the method. The feature 5 is roughened by the surface of the process member or the workpiece after the electromagnetic beam 102 is formed on the surface. The process of roughening the surface of the workpiece after formation, such as "sand blasting" or chemical roughness, can promote the adhesion of the deposited material to the workpiece, because the surface 622 and the surface texture treatment are formed. The surface of the protrusions 604 tends to be smoother (surface roughness (R 〇 about 64 micro 吋). The smooth surface produced by this texturing process is considered to be the surface tension effect of the molten surface generated during the texturing process. The roughened surface formed by "sand blasting" or chemical roughening is important 'because of the intrinsic properties (such as crystal defects, stacking faults, etc.) and/or non-essential present in the deposited material. The stress (eg, temperature difference between the workpiece and the deposited material, thermal expansion misalignment, etc.) may cause the deposited material to distort and/or fracture. The singularity or fracture of the deposited material may result in particles that may cause contamination of the substrate 720. The present invention The increased surface roughening viewpoint helps promote adhesion of the deposited material to the surface of the workpiece via local mechanical bonding or bonding. Wherein, the reaction chamber member, or the workpiece, the surface is further coarsely distorted by a beam of hard particles (jet/") on the surface of the member after the texturing process of step 804. The hard particles may contain For example, alumina, garnet, yttria or tantalum carbide, and may have a particle size of from about 24 to about 80 grit. Typically, the "sandblasting" process is between about 5 and about 7 psi. The pressure blasting process is completed. The blasting process portion also has the effect of removing the slightly adhered material left by the texturing process. In another embodiment of the invention, the process component (or workpiece) is in a texturing process. Chemical cleaning is followed by pen. Due to the stringent cleanliness requirements required to meet the yield target of the semiconductor manufacturing unit, any material that may be micronized, decomposed, evaporated, or separated from the process components during the manufacturing process must be minimized. Some types of contamination that may be found after the texturing process may include, for example, a slightly adhered material that is "sprayed" by the process member material due to local heating of the electromagnetic beam. Contamination from processing process components, and/or any contamination from texturing, sand blasting, tamper removal or chemical roughening reaction chambers. Typical cleaning processes can be ambiguous, for example, containing corrosive etching/defatting steps, going Ionized water for cleaning, in acidic or laboratory solutions to remove contaminants in or on the surface of process components, high-deion deionization 29 1342582 water cleaning, ultrasonic or million-cycle ultrasonic waves to leave the empty oven or blow Process steps such as nitrogen drying. The cleanliness requirements required to meet the semi-goal objectives should be in one embodiment for those skilled in the art of ultra-high and/or semiconductor production, which is completed after the steps have been completed. However, prior to the step in which the member is placed, this embodiment thus helps to ensure that the process chamber is used before the process member is removed. 'The cleaning process is completed only after the sandblasting process to remove any contaminants, because of the treatment. The sandblasted particles that are left behind. It is possible to clean the component prior to the process of yet another embodiment, as long as it is disposed of in a clean environment and is packaged or transferred to a rinse with deionized water. Referring to step 806, the one or more process configuration chambers, for example, the sputtering reactor 700, as shown in step 808, are formed in the reactor, for example, on the substrate 720 in the reactor 700. 8 1 0 ends. While the above discussion details a method of mitigating the reduction of bonds, it is within the scope of the invention to use a method to mitigate any amount of contamination within. Any process in which the present invention can condense the inner surface of the process can be removed from the reaction chamber by sub-water cleaning, and the UEB chemical cleaning of the true conductor production device is well known or understood. Some texturing process steps are placed in a process chamber where all contaminants are present. In another embodiment, the contaminant after the texturing process is removed, and wherein, prior to texturing, the process member is placed in a reaction chamber prior to the process chamber and then disposed within a reaction chamber 716. Start a process sequence, a sputter layer. This method of different types of process reactions in the reactor can be applied to the chamber containing materials. Any component that is partially or fully positioned and placed in a textured device, such as device 100, is suitable for processing by the method of the present invention. The method can be used to mitigate contamination of a process chamber designed to deposit, etch, heat, or condition a workpiece, substrate, or layer deposited therein. In one embodiment, the method is for mitigating a layer of refractory metal or refractory metal compound, such as a layer, a titanium nitride layer, a tantalum layer, a tungsten layer, or a tantalum nitride layer, which is designed to be sputter deposited on a substrate. Dyeing in the reaction chamber. In other similar embodiments of the invention, the texturing method can be used to mitigate one molecule beam epitaxy (MBE), atomic layer deposition (ALD), chemical vapor deposition (CVD), or dry etch process chambers, among other things. , inside the dye. Components that may require a texturing process typically include components that will receive some deposition during the processing cycle (during deposition or cleaning process) and that have a tendency to deposit the film directly or indirectly. In a non-sputtering counter, for example, an MxP+, Super-e or eMax process system can be purchased from Santa Barbara Applied Materials, Inc., and examples of typical pieces that require texturing are: 0040-41188, 0040 -41 189 0020-15694 , 0040-45966 ' 0040-44917 ' 0020-17482 0020-07569 , 0020-07570 ' 0020-07571 , 0020-07567 , and 0020-07568 ° In another embodiment, the one or more The process chamber components are removed from the process chamber after step 808, and the process of removing the condensed foreign matter that may adhere to the textured surface is initiated. Removal of the coagulated foreign matter can be accomplished by spraying a bundle of particles onto the surface of the process chamber component or processes. The hard particles may contain smudges in the interior to smear the smear. 31 1342582 For example, oxidize from about 24 to about 80 foreign substances but bases and protrusions. In another process chamber, liquid handling may involve excessive acid potassium 'hydrogen acid, acid, and chemical shots. Or, other methods. The depressions are formed between the reaction chambers, and in the present invention, for example, the arc welding is used to add adhesion to the working workpiece, which is completed in the environment. Therefore, the attachment of the work piece in the 3A to 3F includes, the stone plum, the oxidized dream or the broken hair, and may have a particle size of a particle size. Preferably, the jet is sufficient to remove the texture on the surface of the member (i.e., in the recessed embodiment, a chemical liquid system is applied to the surface of one or more of the parts to remove the foreign matter on the surface. The chemistry includes, for example, immersing or spraying the surface with a chemical such as a degreasing composition, sodium hydroxide, potassium oxide, ammonium hydroxide, hydrogen peroxide, nitric acid, argon fluoride, or the like. The treatment of the liquid may be added or replaced. The spraying of hard particles can be discussed to remove foreign matter from the textured surface. Preferably, the chemical treatment does not reduce the micro-roughness of the texturing process. In this manner, the member can be returned to the I to provide condensation. Adhesion of the material on the surface. In one embodiment, the texturing process may have to be utilized, metal inert gas (MIG) welding, molecular beam epitaxy, or other similar processes for forming protrusions on the surface of the device. Materials with similar composition. To ensure that the process of adding materials can be required in the vacuum reaction chamber, non-oxidation (for example and / or the workpiece is heated to pick up The addition of the material to the melting point of the material to form the protrusions is intended to promote the deposition of the film against the force. It is contemplated that this embodiment may be substituted or added to the process steps 31 〇 and 8 〇 4 described in the respective figures and Fig. 8. Several preferred embodiments of the teachings of the present invention have been shown and described in detail in the teachings of the specification, the disclosure of which is hereby incorporated by reference to the same. A more detailed description of the features, advantages and objects of the present invention, which are described in the foregoing, are briefly described in the foregoing. A schematic cross-sectional view of a surface texturing apparatus that can be used to implement the embodiments described herein is shown; FIG. 2 shows a schematic cross-sectional view of a control system that can be coupled to a surface texturing apparatus to implement the methods described herein. Embodiments; Figure 3A illustrates a series of method steps that may be used to adjust the surface of a material as described herein; Figure 3B illustrates the surface of the material that may be used to adjust Utilizing a series of method steps of the embodiments described herein; FIG. 3C illustrates a series of method steps that may be used to adjust the surface of the material utilized in the embodiments described herein; FIG. 3D illustrates the surface of the material that may be used to adjust A series of method steps using one of the embodiments described herein; FIG. 3E illustrates a series of method steps that may be used to adjust the surface of the material utilized in the embodiments described herein; FIG. 3F illustrates the surface of the material that may be used to adjust Utilizing a series of method steps of the embodiments described herein; FIG. 4 is a schematic view showing the electron beam sequentially contacting portions of the workpiece to adjust its surface; 33 1342582 FIG. 5A shows that ρτ has been utilized herein. A schematic top view of the surface of the embodiment; FIG. 5 is a view showing the surface of the workpiece of 笫ςΑ m A圊 and its upper view; FIG. 5C is a view showing the surface of the feature array having a hexagonal closely packed thereon. Close-up top view; Figure 5D shows a close-up top-view circle of the work with an array of overlapping features on the field; Figure 6 of the thousand table shows the formation according to the embodiment described herein Summary of the characteristics Section 圊; Figure 7 shows a schematic cross-sectional view of the chain-breaking reactor in which the embodiments described herein can be used to reduce the dyeing; and Figure 8 shows that it can be used to reduce contamination in the process chamber, A series of method steps of one of the embodiments described herein. Textured features of the workpieces in the vicinity of the workpiece surface in the [simplified description of the component symbol] 100 surface texturing equipment 102 electromagnetic beam 104 working piece 106 cathode 108 anode 110 fast focus coil 112A, 112B bias coil 114 work Reaction chamber 114t Upper surface 116 biasing cover 11 8 through hole 120 column 122 cable 124 pump 126 valve 128, 132 isolation valve 34 1342582 130 vacuum pump 140 substrate support 142 actuator 150 heating element 181 energy source 200 micro processing Controller 204 Signal Generator 500 Features 502, 510 Region 504, 606 Electromagnetic Beam Straight 506 Diameter 508 Interval 520 Pattern 602 Sag 604 Protrusion 610 Incident Angle 610a, 610b Ray 612 Depth 614 Surface Diameter 616 Inner Diameter 618 Degree 620 Upper Surface 622 Surface 700 Reservoir Recovery 702, 704 Power Supply 706 Drying Plate 706A, 712A, 718A, 730A Inner Surface 710 Insulator 712 Support Ring 714 Reaction Chamber Wall 716 Vacuum Reaction Chamber. 718 Protection Combination 720 Substrate 728 Alignment Ring 730 Deposition Ring 732 lifting system 734 electrode 736 substrate Support 736A upper surface 738 support 742 protective member 777 reaction zone 35

Claims (1)

1342582 Pickup, Patent Application Range: 1. A method of providing a surface texture of a component in a semiconductor process chamber, comprising: scanning an electromagnetic beam through the surface of the component for a sufficient amount of time to form a plurality of thereon Features; and roughening the surface and features of the member. 2. The method of claim 1, wherein the scan comprises a pass time and a dwell time. 3. The method of claim 1, wherein the electromagnetic beam has a power density at a point on the surface of the member at which the electromagnetic beam is directed at about 104 watts per square millimeter (W/mm 2 ) to It is in the range of about 107 watts/mm 2 (W/mm 2 ). 4. The method of claim 1, wherein the roughening the surface of the member comprises sandblasting the member. 5. The method of claim 1, wherein the roughening the surface of the member comprises chemically roughening the member. 6. The method of claim 1, further comprising heating the member prior to scanning the electromagnetic beam. The method of claim 6, wherein the heating the member comprises preheating the member to a temperature that is lower than a temperature at which the member begins to melt, flow, or substantially decompose. 8. The method of claim 6, wherein the component is heated by a radiant heat lamp, an inductive heater, or an infrared type electric resistance heater. 9. The method of claim 4, wherein the blasting is performed using sand comprising alumina, garnet, tantalum carbide, cerium oxide or a combination thereof. 10. The method of claim 4, further comprising chemically cleaning the member after blasting the member. 11. The method of claim 5, further comprising chemically cleaning the member after chemically roughening the member. 12. The method of claim 1, further comprising forming a plurality of thereon The component is chemically cleaned after the feature. 13. The method of claim 1, further comprising the step of removing the stress of the member prior to providing a texture on the surface of the member, further comprising: 14. The method of claim 1, wherein the method of claim 1 is The stress of the member is eliminated after a plurality of features. 15. The method of claim 1, further comprising eliminating the stress of the member after eliminating a condition of the member prior to providing a surface texture. ' Take the hard 16. The method described in claim 4 of the patent scope' - the component eliminates the stress of the component. The % step is included in the blasting 17. The method described in the item of claim 2 is for forming a feature on the electromagnetic beam-first surface of the granule formed on the second surface of the member: To compensate for the possible deformations. 18. A method of providing a surface texture of a component, comprising: pumping a texturing reaction chamber to a pressure within a range of from 1 to 5 Torr; from about 1 〇 3 Torr to about using a beam current between about 15 and about a speed of about 5 〇 and about 160 kV female ΓΒ and add the surface of the member, and the upper electron beam sweeping the shoe over the tool to form a plurality of features. Roughening the surface and features of the member. 19. The method of claim 18, wherein the scan comprises a pass time and a dwell time. 20. The method of claim 18, wherein the electromagnetic beam power density at a point on the surface of the member at which the electromagnetic beam is directed is about 1 〇 4 watts/mm 2 (W/mm 2 ). Up to about 107 watts/mm 2 (W/mm 2 ). 21. The method of claim 18, wherein the roughening the surface of the member comprises sandblasting the member. 22. The method of claim 18, wherein the roughening the surface of the member comprises chemically roughening the member. 23. The method of claim 18, further comprising heating the member prior to scanning an electromagnetic beam. 24. The method of claim 23, wherein the heating the member comprises preheating the member to a temperature that is lower than a temperature at which the member begins to melt, flow, or substantially decompose. 25. The method of claim 23, wherein the member 39 1342582 is heated by a radiant heat device. 2 6 · If the patent application system is carried out using sand containing oxygen and matter. 2 7 · If you apply for patents, the components are laterized and 2 8. If the patent application is roughened, the structure is formed. 29. If a plurality of patents are formed on the patent application, the patent is applied to the surface of the component - 3 1 Such as the application of patents into a plurality of features 1 32. If the application of the patent model induction heater, or the infrared type of the method described in Item 21, Yu Ming, Shi Jieshi, carbonized niobium, which is the 21st item of the upper oxide sand The method described further cleans the member. In the method described in item 22, the member is chemically cleaned after one step of ice. Method described in item 18: Chemical cleaning of the component after F. The method described in item 18 - before the texture is removed, further, further stress. In the method described in item 18, the stress of the member is eliminated. The method according to Item 18, the step-resistive heating described in the blasting or the combination thereof is included in the spray contained in the inclusion contained in the form contained in the form 40 i.1342582 3 3. As claimed The method of claim 3, wherein the beam is formed on the surface of the member of the member to complement any possibility of forming a special μ π on the first surface. The deformation of 3 5 · If you apply for a patent on the surface of a solid point on the surface. The stress of the member is removed before the surface texture is applied, and the stress of the member is eliminated after the plurality of features. The method of claim 21, further removing the stress of the member after sanding the member, wherein the upper 1 force density is between about 1 〇 4 and about 1 〇 5 36. The method of clause S, wherein the comparing the surface comprises Ray & «chemically roughening the surface. 37. The method of claim 22, wherein the surface is roughened and the surface is electrochemically roughened. 38. A process chamber component for use in a process only reaction chamber, a body having one or more surfaces; and a plurality of features formed on the surface of the surface, wherein the formation is contained in the spray The chemical contained in the chemical slabs of the component watts/squares is exemplified by a magnetic chemistry: the features 41 1342582 are scanned by an electromagnetic energy beam over the surface of the process chamber component to form 'and The features formed are selected from the group consisting of depressions, protrusions, and combinations thereof, and wherein the surface described above is chemically roughened after forming a plurality of features thereon. 3. The process chamber component of claim 38, wherein the surface is chemically cleaned after chemically roughening the process chamber component. 40. The process chamber component of claim 38, wherein the surface is electrochemically roughened. 41. A process chamber component for use in a process chamber, comprising: - a body having one or more surfaces; and a plurality of features formed on the surfaces, wherein the features are utilized - an electromagnetic energy beam Scanning over a surface of one of the process chamber components, and wherein the features formed are selected from the group consisting of depressions, protrusions, combinations thereof, and wherein the components are scanned at the electromagnetic energy beam Stress is removed prior to the surface of the process chamber component. A process chamber component for use in a process chamber, comprising: a body having one or more surfaces; and a plurality of features formed on the surfaces, wherein the features 42 1342582 are scanned using an electromagnetic energy beam Oriented against a surface of one of the process chamber components, and wherein the features formed are selected from the group consisting of depressions, protrusions, and combinations thereof, and wherein the member is entering the electromagnetic energy beam sweep The aiming is directed to a preheating temperature, and wherein the components described above are relieved of stress prior to heating to a preheating temperature. 43. A process chamber component for use in a process chamber, comprising: a body having one or more surfaces; and a plurality of features formed on the surfaces, wherein the features utilize an electromagnetic energy beam Scanning over a surface of one of the process chamber components, and forming such features from a group consisting of depressions, protrusions, and combinations thereof, and wherein the members are forming a plurality of features After stress relief. 44. A process chamber component for use in a process chamber, comprising: a body having one or more surfaces; and a plurality of features formed on the surfaces, wherein the features are scanned using an electromagnetic energy beam Oriented against a surface of one of the process chamber components, and wherein the features formed are selected from the group consisting of depressions, protrusions, and combinations thereof, and wherein the components described above provide a surface texture and Stress is removed after forming a plurality of features on the surface. 45. A process chamber component for use in a process chamber, comprising: 43 1342582 a a host having one or more surfaces; and a plurality of features formed on the surfaces, wherein the features are utilized An electromagnetic energy beam is scanned across a surface of one of the process chamber components to form 'and wherein the features formed are selected from the group consisting of depressions, protrusions, and combinations thereof, and wherein the member is entering the The electromagnetic energy beam is directed to a preheat temperature prior to scanning, and wherein the components described above are relieved of stress after forming a plurality of features. 46. A process chamber component for use in a process chamber, comprising: a body having one or more surfaces; and a plurality of features formed on the surfaces, wherein the features are scanned using an electromagnetic energy beam Oriented against a surface of one of the process chamber components, and wherein the features formed are selected from the group consisting of depressions, protrusions, and combinations thereof, and wherein the members described above are formed in a first A feature on the second surface, wherein the features on the second surface compensate for stress induced by features formed on the first surface. 44