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TWI341600B - Light optoelectronic device and forming method thereof - Google Patents

Light optoelectronic device and forming method thereof

Info

Publication number
TWI341600B
TWI341600B TW096132383A TW96132383A TWI341600B TW I341600 B TWI341600 B TW I341600B TW 096132383 A TW096132383 A TW 096132383A TW 96132383 A TW96132383 A TW 96132383A TW I341600 B TWI341600 B TW I341600B
Authority
TW
Taiwan
Prior art keywords
forming method
optoelectronic device
light optoelectronic
light
forming
Prior art date
Application number
TW096132383A
Other languages
English (en)
Other versions
TW200910645A (en
Inventor
Tzong Liang Tsai
Original Assignee
Huga Optotech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huga Optotech Inc filed Critical Huga Optotech Inc
Priority to TW096132383A priority Critical patent/TWI341600B/zh
Priority to US12/061,623 priority patent/US8124989B2/en
Publication of TW200910645A publication Critical patent/TW200910645A/zh
Application granted granted Critical
Publication of TWI341600B publication Critical patent/TWI341600B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
TW096132383A 2007-08-31 2007-08-31 Light optoelectronic device and forming method thereof TWI341600B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW096132383A TWI341600B (en) 2007-08-31 2007-08-31 Light optoelectronic device and forming method thereof
US12/061,623 US8124989B2 (en) 2007-08-31 2008-04-02 Light optoelectronic device and forming method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096132383A TWI341600B (en) 2007-08-31 2007-08-31 Light optoelectronic device and forming method thereof

Publications (2)

Publication Number Publication Date
TW200910645A TW200910645A (en) 2009-03-01
TWI341600B true TWI341600B (en) 2011-05-01

Family

ID=40405999

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096132383A TWI341600B (en) 2007-08-31 2007-08-31 Light optoelectronic device and forming method thereof

Country Status (2)

Country Link
US (1) US8124989B2 (zh)
TW (1) TWI341600B (zh)

Families Citing this family (8)

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JP5533744B2 (ja) * 2010-03-31 2014-06-25 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
US20120015502A1 (en) * 2010-07-14 2012-01-19 Jie Cui p-GaN Fabrication Process Utilizing a Dedicated Chamber and Method of Minimizing Magnesium Redistribution for Sharper Decay Profile
CN102637796B (zh) * 2012-05-15 2014-11-12 湘能华磊光电股份有限公司 具有P型AlGaN层结构的LED芯片及其制备方法
KR20130141290A (ko) * 2012-06-15 2013-12-26 삼성전자주식회사 초격자 구조체 및 이를 포함한 반도체 소자
JP6430317B2 (ja) * 2014-08-25 2018-11-28 株式会社東芝 半導体発光素子及びその製造方法
CN104701432A (zh) * 2015-03-20 2015-06-10 映瑞光电科技(上海)有限公司 GaN 基LED 外延结构及其制备方法
DE102016112294A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
CN113284995A (zh) * 2021-03-30 2021-08-20 华灿光电（浙江）有限公司 深紫外发光二极管的外延片及其制备方法

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Also Published As

Publication number Publication date
US8124989B2 (en) 2012-02-28
TW200910645A (en) 2009-03-01
US20090057694A1 (en) 2009-03-05

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