TWI238589B - High step-up converter with coupled-inductor by way of bi-direction energy transmission - Google Patents
High step-up converter with coupled-inductor by way of bi-direction energy transmission Download PDFInfo
- Publication number
- TWI238589B TWI238589B TW093114585A TW93114585A TWI238589B TW I238589 B TWI238589 B TW I238589B TW 093114585 A TW093114585 A TW 093114585A TW 93114585 A TW93114585 A TW 93114585A TW I238589 B TWI238589 B TW I238589B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- circuit
- capacitor
- diode
- current
- Prior art date
Links
- 230000005540 biological transmission Effects 0.000 title claims abstract 6
- 230000001172 regenerating effect Effects 0.000 claims abstract description 106
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- 238000011084 recovery Methods 0.000 claims abstract description 26
- 230000000694 effects Effects 0.000 claims abstract description 12
- 230000002349 favourable effect Effects 0.000 claims abstract 2
- 239000003990 capacitor Substances 0.000 claims description 163
- 238000004804 winding Methods 0.000 claims description 150
- 238000013016 damping Methods 0.000 claims description 94
- 239000004065 semiconductor Substances 0.000 claims description 73
- 230000002457 bidirectional effect Effects 0.000 claims description 57
- 238000012546 transfer Methods 0.000 claims description 53
- 238000010168 coupling process Methods 0.000 claims description 50
- 238000005859 coupling reaction Methods 0.000 claims description 50
- 230000008878 coupling Effects 0.000 claims description 49
- 230000005284 excitation Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 238000005516 engineering process Methods 0.000 claims description 20
- 230000006870 function Effects 0.000 claims description 19
- 230000001965 increasing effect Effects 0.000 claims description 16
- 230000008901 benefit Effects 0.000 claims description 15
- 230000000295 complement effect Effects 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 230000002500 effect on skin Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 210000004508 polar body Anatomy 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims description 2
- 230000008929 regeneration Effects 0.000 claims description 2
- 238000011069 regeneration method Methods 0.000 claims description 2
- 206010033799 Paralysis Diseases 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 230000005415 magnetization Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 230000035939 shock Effects 0.000 claims 1
- 239000002699 waste material Substances 0.000 claims 1
- 238000004088 simulation Methods 0.000 abstract description 13
- 239000000446 fuel Substances 0.000 abstract description 9
- 230000005347 demagnetization Effects 0.000 abstract 1
- 230000001131 transforming effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 210000004027 cell Anatomy 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 7
- 238000009795 derivation Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000001914 filtration Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000010336 energy treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000013332 literature search Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
Landscapes
- Dc-Dc Converters (AREA)
Abstract
Description
1238589 玖、發明說明: 【發明所屬之技術領域】 許多電源應用場合,例如氣體放電式頭燈、不斷電系統 中反流器之高壓直流匯流排、寬頻行波管放大器…等,均需 要高壓直流電源供應,一般以蓄電池作為電力來源;另一方 面,潔淨能源發電系統,如太陽能、風能及燃料電池,通常 為較低電壓之直流電源,因此高昇壓比之高效率直流/直流換 流器為必要之前端能源轉換機制。本發明之利用耦合電感雙Φ 向磁路能量傳遞之高昇壓比換流器,可以將:(1)傳統蓄電池 及潔淨能源發電系統,轉換為高電壓直流電源供電系統,大 幅提昇能源利用率及增加供電穩定度;(2)將市電電源整流為 直流電源後,利用本創作可升壓至仟伏級直流電源系統,亦 或是調節直流電壓,提供後端電源電路使用並增進電源品 質。本發明所涉及之技術領域包含電力電子、直流/直流換流 技術及能源科技之範疇,雖然本發明所牽涉之技術領域廣 泛,但其主要在於利用耦合電感雙向磁路能量傳遞及電壓箝$ 制技術,改善習用高昇壓換流器所使用之元件必須承受兩側 電壓及電流之應力,致使其容量無法充分運用及轉換效率不 彰之缺失。 【先前技術】 一般傳統昇壓式換流器電路如圖2(a)所示,藉由調整開 關之責任週期(Duty Cycle),以提高輸入電壓之位準。習用昇 壓式換流器之功率半導體開關於截止時,兩端跨壓同為輸出 側電壓值,因此必須選擇耐壓大於或等於輸出側電壓之功率 1238589 半導體開關,倘若採用MOSFET元件,其特性含有較大導通 阻抗(RDS(0N)),自然衍生較高之導通損失。此外,傳統昇壓 式換流器中輸出端二極體存在逆向恢復(Reverse-Recovery)之 問題,當功率半導體開關導通瞬間,輸出端二極體必須幾乎 以突波電流建立逆偏電壓,此電流流經功率半導體開關,引 起嚴重之切換損失,以致於其轉換效率不彰。但由於此架構 簡單且成本低廉,於昇壓比不高及不苛求效率的情形下,為 工業界廣泛應用,如功率因數調整器(Power Factor Correction^ PFC)。 ’ 目前第二種習用昇壓架構即是利用變壓器,該電路最大 優點可以隔離高、低壓側電路。一般最常使用變壓器的直流/ 直流轉換裝置反而是降壓式換流器,優點在於可以在低壓侧 使用低導通損失之元件,並於高壓侧開關截止時,不會因開 關/¾漏電流直接傳遞至低壓側,導致低壓侧電路之元件,因 電壓過南擊穿。然而,激磁電流之平衡控制及漏感能量處理, 都是有待克服之問題。此外,變壓器應用於昇靨架構時亦存_ 在諸多缺點’譬如最高電壓增益等於匝數比例,輸出整流二 極體承受至少兩倍輸出電壓之應力,以致使緩震電路是不可 或缺之裝置。 對於昇壓電路而言,隔離的意義為何?倘若電路主動權 在於低壓側’換言之,控制電路可以掌控系統電壓,而掌控 的開關係利用電壓箝制技術後,使用較低電壓額定之功率半 導體開關’那麼還需要隔離嗎?於是各界研究發展非隔離型 幵壓架構,習用耦合電感型昇壓電路,如圖2(b)所示,它同 7 1238589 時具有返馳式(Flyback)高昇壓比特性。由於搞合電感屬非隔 離型昇壓架構,一次側電路可以輔助昇壓,昇壓比例及輸出 功率均優於返馳式電路。然而圖2(b)電路於開關截止時,漏 感所產生之突波電壓,必須加裝緩震電路以消耗其能量,避 免開關過壓而損壞,因此其轉換效率不彰。 因此許多專家學者提出高效率昇壓換流技術(如下列備 註所列論文),改善上述傳統昇壓式換流器缺點,大致分成 四類·· 第一類型:柔性切換技術1238589 发明 Description of the invention: [Technical field to which the invention belongs] Many power supply applications, such as gas discharge headlamps, high-voltage DC busbars of inverters in uninterruptible power systems, wideband traveling wave tube amplifiers, etc., all require high voltage DC power supply generally uses batteries as the source of power; on the other hand, clean energy power generation systems, such as solar, wind and fuel cells, are usually lower voltage DC power sources, so high efficiency DC / DC converters with high boost ratios The device is a necessary front-end energy conversion mechanism. The high step-up converter using double-inductive energy transfer to the magnetic circuit of the present invention can convert: (1) traditional storage batteries and clean energy power generation systems into high-voltage DC power supply systems, which greatly improves energy utilization and Increase the stability of power supply; (2) After rectifying the mains power to DC power, use this creation to step up to a volt-level DC power system, or adjust the DC voltage to provide back-end power circuits and improve power quality. The technical field covered by the present invention includes the fields of power electronics, DC / DC converter technology and energy technology. Although the technical field involved in the present invention is wide, it is mainly based on the use of coupled inductor bidirectional magnetic circuit energy transfer and voltage clamp system Technology, to improve the components used in conventional high-boost converters must withstand the stress of both sides of the voltage and current, so that its capacity cannot be fully used and the conversion efficiency is inadequate. [Prior technology] As shown in Figure 2 (a), the conventional traditional boost converter circuit is used to adjust the duty cycle of the switch to increase the input voltage level. When the power semiconductor switch of the conventional step-up converter is turned off, the voltage across the two terminals is the same as the output side voltage. Therefore, it is necessary to select a power 1238589 semiconductor switch with a withstand voltage greater than or equal to the output side voltage. If a MOSFET element is used, its characteristics Contains large on-resistance (RDS (0N)), naturally resulting in higher on-conduction loss. In addition, the output diode in the conventional boost converter has the problem of reverse-recovery. When the power semiconductor switch is turned on, the output diode must almost establish a reverse bias voltage with a surge current. Current flows through the power semiconductor switch, causing serious switching losses, so that its conversion efficiency is not good. However, due to its simple structure and low cost, it is widely used in the industry, such as Power Factor Correction ^ PFC, when the boost ratio is not high and efficiency is not critical. ’At present, the second conventional boost architecture is to use a transformer. The biggest advantage of this circuit is that it can isolate the high and low-side circuits. Generally, the most commonly used transformer DC / DC conversion device is a step-down converter. The advantage is that low conduction loss components can be used on the low voltage side. When the high voltage side switch is turned off, it will not be directly caused by the switch / ¾ leakage current. Passed to the low-voltage side, causing the components of the low-voltage side circuit to breakdown due to voltage over south. However, the balance control of the excitation current and the energy treatment of leakage inductance are problems to be overcome. In addition, transformers also exist when applied to the lifting structure _ in many disadvantages, such as the highest voltage gain is equal to the number of turns, the output rectifier diodes bear at least twice the output voltage stress, so that the cushioning circuit is an indispensable device . What does isolation mean for a boost circuit? If the initiative of the circuit lies on the low-voltage side, in other words, the control circuit can control the system voltage, and the on-control relationship uses voltage clamping technology to use a lower-voltage rated power semiconductor switch, then do you still need isolation? Therefore, various circles have researched and developed non-isolated voltage boosting architecture, and conventionally used a coupled inductive booster circuit. As shown in Figure 2 (b), it has a flyback high boost ratio characteristic when it is the same as 7 1238589. Because the coupling inductor is a non-isolated boost architecture, the primary circuit can assist boost, and the boost ratio and output power are better than the flyback circuit. However, when the circuit in Figure 2 (b) turns off, the surge voltage generated by the leakage inductance must be equipped with a damping circuit to consume its energy and avoid damage caused by the overvoltage of the switch, so its conversion efficiency is not good. Therefore, many experts and scholars have proposed high-efficiency boost converter technologies (such as the papers listed in the following remarks) to improve the shortcomings of the traditional boost converters, which can be roughly divided into four categories: · The first type: flexible switching technology
參考文獻[1]利用耦合電感之漏感與開關寄生電容(一般 又稱輸出電容)(Parasitic Capacitance or Output Capacitance) 之諧振特性,於諧振電壓最低點時開關導通,解決二極體逆 向恢復電流之問題,因此切換損失大幅減少,而且是單開關 架構,輕載效率可達97%以上,本發明圖11(f)的開關電壓〜 波形亦有類似此柔性切換功能。參考文獻[1]諸多缺點:(1) 開關仍須承受高、低壓側之電壓及電流;(2)開關容量利用率 低,以TO-247開關包裝容量,但僅有200W輸出,顯然該架 構之高效率特性並無法於較高負載下表現;(3)電感電流漣波 與開關導損失較高;(4)僅提高50%之輸入電壓,昇壓比例 低;(5)變頻控制,將造成驅動電路複雜以及重載之柔性切換 效果有限。一般諧振電路易受負載及電感電容參數變化影 響,同時開關電流漣波大,將增加額外導通損失。參考文獻[2] 輸出功率達1.6kW轉換效率高於前述文獻,然而此電路需要 加裝輔助開關,控制電路較為複雜。輸出400V與輸入300V 1238589 之電壓差距不高,導通電流低,因此柔性切換將是達成高效 率轉換之關鍵技術。一般而言,只要有效處理二極體逆向恢 復電流的問題,高輸入電壓且升壓比例很低的非隔離架構換 流器,開關導通的時間短,代表只有輸出端與輸入端之壓差 能量是靠開關所提供的,相對的開關導通損失小,理論上可 以大幅提昇轉換效率。基本上,柔性切換最重要是處理開關 導通時,開關寄生電容短路電流之損失,若不考慮二極體逆 向恢復電流部分,開關MOSFET大部分之切換損失等於$ 〇.5乂(^以[1],其中/;為切換頻率,為開關電壓,Q為開關 寄生電容,倘若開關導通前,兩端電壓低於50V時,切換損 失在全部損失所佔比例大幅下降,因此以柔性切換特性在此 電壓範圍操作,對於提高轉換效率之效益有限。 第二類型:變壓器昇壓 參考文獻[3]利用變壓器配合柔性切換技術,最高效率可 達97.5%,但昇壓比例不到三倍,而且遠低於匝數比。開關 所承受之電壓與輸出電壓相同,因此變壓器並未將隔離之特® 性充分發揮,以應用於低壓側低導通損之功率半導體開關。 第三類型:耦合電感架構 參考文獻[4]已經成功處理漏感能量之問題,同時達成開 關電壓箝制之效果。文中以箝制電容吸收低壓側漏感瞬間大 電流,該電容同時有助於提高電壓增益。另一方面,在箝制 模式運用下,開關所承受電壓低於輸出電壓,並為前述幾種 架構中,昇壓比例最高,既使在額定功率輸出時,仍呈現出 1238589 不錯轉換效率,為高效率高昇壓比換流器跨出一大步。後續 發表之參考文獻[5]敘述參考文獻[4]架構在開關導通時’高 壓侧二極體需承受匕+〃‘之逆向偏壓及)^為輸出電壓,/2 為匝數比),必須搭配使用缓震電路消除漏感所造成之突波 電壓,此種情形在高輸出電壓與高匝數比架構更為明顯。參 考文獻[5]將前者輸出電容調整至二次側高壓迴路,有效降低 二極體逆向偏壓,但不可否認,緩震電路還是無法捨去。 第四類型··二次侧多組串聯昇壓 _ 參考文獻[6]利用兩級或單級架構、柔性切換加上變壓器 昇壓,以獲得高電壓增益。其變壓器二次側整流後,將多組 繞組串聯電壓,得到3.2kV之高電壓輸出,主要為通訊衛星 用之電源,參考文獻[5]中亦有類似電路接法。由於運用柔性 切換特性,有效處理高壓側二極體逆向恢復電流的問題,因 此轉換效率非常高,輸入電壓為26V-44V,供應額定150W負 載時,最低效率94.1%,就高昇壓比技術範疇而言,為一經 典之作。進一步分析,實際上3.2kV為二次側多繞組電壓串_ 接才能提升至此範圍,若以單繞組最高輸出電壓僅為750V。 主要架構使用到四個開關、三個電感及一個變壓器。輔助開 關實測最高電壓150V,實際選用耐壓250V-23A;主開關實測 最高電壓120V,選用耐壓200V-100A。全部使用四個TO-247 開關,然而輸出功率僅有150W,未充分發揮元件之容量, 不過該架構用於通訊衛星,效率實為首要考量。 綜合觀察先前技術所列之參考文獻以及其他耦合電感架 構,其開關兩端之電壓波形,如參考文獻[1]之Fig. 15及參考 10 1238589 文獻[5]之Fig· 19之實測開關厘〇;51^丁電壓波形,截止瞬間皆 存在突波電壓,其電壓超過正常跨壓一半以上,必須提高使 用開關電壓規格,甚至高於輸出電壓。以M〇SFET製造特性, 提高之比例將遠高於電壓上昇幅度,一般而言,m〇SFET 的導通損與電流平方成正比,高壓]^〇!51^1的重載導通損將 南於IGBT功率半導體開關,因此部分高效率之電路只能於輕 載才能有所表現,此乃一般研究人員揚其長避其短之處。參 考文獻[1]及參考文獻[5]所呈現之開關突波電壓,乃因耦合 電感一次侧截止時,線路及元件内部之電感流經電流,瞬間 電流變化所引起。解決方式必須在開關兩側並聯緩震電路, 流經電路必須越短越好,此路徑必須兼具低集膚效應及互感 值,如此才能有效使用更低電壓之低導通損開關,因此高效 率南昇壓比裝置,電壓箝制技術遠比柔性切換機制更為重 要。另外,上述耦合電路已克服漏感之影響,但並未進一步 解決高壓側二極體之電壓箝制問題。其次,二次側繞組只有 早方向電流’鐵心利用率低。 紅將先前鬲昇壓比換流器技術缺失作一總結:(丨)諧振電_ 路發揮之領域應於高輸入電壓架構;(2)開關容量未能充分運 用;(3)不能同時在高、低壓侧所有元件達成電壓箝制j句未能 充分運用變壓器之激磁電流與感應電流的特性;(5)轉換效^ 無法全面提升;(6)咸有架構可同時達成高效率及高升壓比之 功月b,(7)架構或控制複雜。本創作主旨係以上述所列缺失, 逐一克服達成尚效率高昇壓比換流裝置之目的,在同樣匝數 比與責任週期導通前提下,電壓增益比高於前述架構,甚至 1238589 無法在其他先前文獻搜尋相同技術。除此之外,在後續說明 亦揭示本創作仍具高效率轉換之特點。 備註:參考文獻 1· D· C. Lu,D· K. W. Cheng,and Y. S· Lee,“A single-switch continuous-conduction-mode boost converter with reduced reverse-recovery and switching losses/9 IEEE Transactions on Industrial Electronics, vol. 50? pp. 767-776, 2003. · 2. C. M. C. Duarte, and I. Barbi? uAn improved family of ZVS-PWM active-clamping DC-to-DC converters/5 IEEE Transactions on Power Electronics, vol. 17? pp. 1-7, 2002. 3. E. S· da Silva,L. dos Reis Barbosa,J· B. Vieira,Jr·, L· C· deReference [1] utilizes the resonance characteristics of the leakage inductance of the coupled inductor and the parasitic capacitance or output capacitance (general output capacitance) of the switch. At the lowest point of the resonance voltage, the switch is turned on to solve the reverse recovery current of the diode. The problem is that the switching loss is greatly reduced, and the single switch architecture has a light load efficiency of more than 97%. The switching voltage to waveform of FIG. 11 (f) of the present invention also has a similar flexible switching function. Reference [1] Many shortcomings: (1) the switch must still bear the voltage and current of the high and low voltage sides; (2) the switch capacity utilization is low, and the TO-247 switch is used to pack the capacity, but only 200W output, obviously the architecture The high efficiency characteristics cannot be performed under higher loads; (3) the inductor current ripple and switching losses are high; (4) the input voltage is only increased by 50%, and the boost ratio is low; (5) the frequency conversion control, will The flexible switching effect of the complicated driving circuit and the heavy load is limited. General resonant circuits are susceptible to changes in load and inductance-capacitance parameters. At the same time, large switching current ripples will increase additional conduction losses. Reference [2] has an output power of 1.6 kW, and the conversion efficiency is higher than that of the previous literature. However, this circuit needs to be equipped with an auxiliary switch, and the control circuit is more complicated. The voltage difference between the output 400V and the input 300V 1238589 is not high and the on-current is low. Therefore, flexible switching will be the key technology to achieve efficient conversion. Generally speaking, as long as the reverse recovery current of the diode is effectively dealt with, the non-isolated architecture converter with high input voltage and low boost ratio has a short switch-on time, which means that only the energy difference between the output and input It is provided by the switch, the relative switch conduction loss is small, and theoretically can greatly improve the conversion efficiency. Basically, the most important thing for flexible switching is to deal with the loss of short-circuit current of the parasitic capacitance of the switch when the switch is on. If the reverse recovery current part of the diode is not considered, most of the switching loss of the switching MOSFET is equal to $ 0. 5 乂 (^ 以 [1 ], Where /; is the switching frequency, is the switching voltage, and Q is the switching parasitic capacitance. If the voltage at both ends of the switch is less than 50V before the switch is turned on, the proportion of the switching loss in the total loss is greatly reduced. Voltage range operation has limited benefits for improving conversion efficiency. Type II: Transformer boost reference [3] The use of transformers with flexible switching technology can achieve a maximum efficiency of 97.5%, but the boost ratio is less than three times and is much lower. Because the switch bears the same voltage as the output voltage, the transformer does not take full advantage of the isolation characteristics to apply to power semiconductor switches with low conduction loss on the low side. Type III: Coupling Inductor Architecture References [4] The problem of leakage inductance energy has been successfully dealt with, and the effect of switching voltage clamping has been achieved. The clamping capacitor is used to absorb the low voltage side. This capacitor helps to improve the voltage gain at the same time when the leakage inductance is instantaneous. On the other hand, in the clamp mode, the voltage to which the switch is subjected is lower than the output voltage. At rated power output, 1238589 still shows good conversion efficiency, which is a big step for high efficiency and high boost ratio converter. Subsequent references [5] describe the reference [4] architecture when the switch is turned on 'high voltage The side diode needs to withstand the reverse bias voltage of 匕 + 〃 'and ^ is the output voltage and / 2 is the turns ratio). It must be used in conjunction with a damping circuit to eliminate the surge voltage caused by leakage inductance. The output voltage and high turns ratio are more obvious than the architecture. In reference [5], the former output capacitance was adjusted to the secondary side high-voltage loop, which effectively reduced the reverse bias voltage of the diode, but it is undeniable that the cushioning circuit could not be dropped. The fourth type ·· Multiple series boost on the secondary side _ Reference [6] uses a two-stage or single-stage architecture, flexible switching, and transformer boost to obtain high voltage gain. After the secondary side rectification of the transformer, multiple sets of windings are connected in series to obtain a high-voltage output of 3.2 kV, which is mainly a power supply for communication satellites. There is a similar circuit connection method in reference [5]. Due to the use of flexible switching characteristics, it effectively deals with the reverse recovery current of the high-side diode, so the conversion efficiency is very high. The input voltage is 26V-44V. When the rated load is 150W, the minimum efficiency is 94.1%. In other words, it is a classic. Further analysis, in fact, 3.2kV is the secondary side multi-winding voltage string _ connection can be increased to this range, if the maximum output voltage of a single winding is only 750V. The main architecture uses four switches, three inductors, and a transformer. The auxiliary switch measures the highest voltage of 150V, and the actual voltage is 250V-23A. The main switch measures the highest voltage of 120V, and the voltage is 200V-100A. All four TO-247 switches are used, but the output power is only 150W, and the capacity of the components is not fully used. However, the architecture is used for communication satellites, and efficiency is the primary consideration. Comprehensively observe the references listed in the prior art and other coupled inductor architectures, and the voltage waveforms across the switches, such as Fig. 15 in reference [1] and Fig. 19 in reference [12] in [12]. ; 51 ^ D voltage waveform, there is a surge voltage at the moment of cutoff, its voltage exceeds the normal cross-over voltage by more than half, the switching voltage specifications must be increased, or even higher than the output voltage. Based on the manufacturing characteristics of M0SFET, the increase ratio will be much higher than the voltage increase. Generally speaking, the on-state loss of m0SFET is proportional to the square of the current, and the high-load conduction loss of ^ 〇! 51 ^ 1 will be lower than IGBT power semiconductor switches, so some high-efficiency circuits can only perform at light loads. This is the general researcher's strengths to avoid their weaknesses. The switching surge voltages presented in References [1] and [5] are caused by the current flowing through the inductors inside the line and components when the primary side of the coupled inductor is turned off, and the instantaneous current changes. The solution must be in parallel with the damping circuit on both sides of the switch, and the shorter the flow through circuit, the better. This path must have both low skin effect and mutual inductance value, so that the low-conductance switch with lower voltage can be effectively used, so the efficiency is high. South boost ratio device, voltage clamping technology is far more important than the flexible switching mechanism. In addition, the above coupling circuit has overcome the influence of leakage inductance, but has not further solved the problem of voltage clamping of the high-side diode. Secondly, the secondary side winding has only the early direction current 'and the core utilization rate is low. Red summarizes the lack of previous 鬲 boost ratio converter technology: (丨) the field of resonance circuit _ should be used in high input voltage architecture; (2) the switching capacity is not fully utilized; (3) can not be at the same time in high The voltage clamping of all components on the low-voltage side has failed to make full use of the characteristics of the excitation current and induced current of the transformer; (5) the conversion efficiency cannot be fully improved; (6) the existing architecture can achieve high efficiency and high boost ratio at the same time Contribution month b, (7) Complex architecture or control. The purpose of this creation is to overcome the above-mentioned shortcomings one by one to achieve the purpose of achieving a high-efficiency high-boost converter device. Under the premise of the same turn ratio and duty cycle, the voltage gain ratio is higher than the previous structure, and even 1238589 cannot Literature search for the same technique. In addition, the following description also reveals that this creation still has the characteristics of efficient conversion. Note: References 1 · D · C. Lu, D · KW Cheng, and Y. S · Lee, "A single-switch continuous-conduction-mode boost converter with reduced reverse-recovery and switching losses / 9 IEEE on Industrial Electronics, vol. 50? Pp. 767-776, 2003. · 2. CMC Duarte, and I. Barbi? UAn improved family of ZVS-PWM active-clamping DC-to-DC converters / 5 IEEE on Power Electronics, vol 17? Pp. 1-7, 2002. 3. E. S. da Silva, L. dos Reis Barbosa, J. B. Vieira, Jr., L. C. de
Freitas, and V. J. Farias5 uAn improved boost PWM soft-single-switched converter with low voltage and current stresses/9 IEEE Transactions on Industrial Electronics, voL 48, pp· 1174-1179, 200L 暹 4. Q. Zhao,and F. C. Lee,“High-efficiency,high step-up DC-DC converters,’’ IEEE Transactions on Power Electronics, vol· 18, pp· 65-73, 2003. 5. K. C. Tseng,and T. J. Liang, “Novel high-efficiency step-up converter,” IEE Proceedings Electric Power Applications, vol. 151, pp. 182-190, 2004. 6· I. Barbi,and R. Gules,“Isolated DC-DC converters with high-output voltage for TWTA telecommunication satellite 1238589 applicationsZ,IEEE Transactions on Power Electronics, vol. 18, pp· 975-984, 2003. 以下將前述參考文獻之高效率昇壓換流技術彙整比較,以 更進一步凸顯本發明之「利用耦合電感雙向磁路能量傳遞之 高昇壓比換流器」技術突破之技術參考指標。Freitas, and VJ Farias5 uAn improved boost PWM soft-single-switched converter with low voltage and current stresses 9 IEEE Transactions on Industrial Electronics, voL 48, pp · 1174-1179, 200L Siam 4. Q. Zhao, and FC Lee, "High-efficiency, high step-up DC-DC converters," IEEE Transactions on Power Electronics, vol · 18, pp · 65-73, 2003. 5. KC Tseng, and TJ Liang, "Novel high-efficiency step- up converter, "IEE Proceedings Electric Power Applications, vol. 151, pp. 182-190, 2004. 6. I. Barbi, and R. Gules," Isolated DC-DC converters with high-output voltage for TWTA telecommunication satellite 1238589 applicationsZ , IEEE Transactions on Power Electronics, vol. 18, pp · 975-984, 2003. The following compares and compares the high-efficiency boost converter technology of the aforementioned references to further highlight the "two-way magnetic circuit energy using coupled inductors" of the present invention. The technical reference index of the technology breakthrough of "high boost ratio converter of transfer".
參 考 文 獻 輸入 電壓 輸出 電壓 輸出 容量 最高轉 換效率 電壓 增益 及 倍數 開關使用 規格或 波形最南 跨壓 優缺點比較 Φ [1] 100V 150V 200W 97.4% 1.5 500V/14A 優點:具柔性切換 缺點:昇壓比低及電 感容量大 [2] 300V 400V 1.6kW 98,3% 1.3 500V/20A 優點:具柔性切換 缺點:昇壓比太低及 箝制電壓高 [3] 80V 200V 400W 97.5% 2.5 400V/10A 優點:具柔性切換 缺點:昇壓比最多四 倍 [4] 48V 1 75V 380V lkW 92.3% (75V-lkW) ^ ^nD Ciy — y 1 - D 8.0 250V/14A 並聯4個 優點··架構簡單及使 用較低導通 損零件 缺點:二極體需加 緩震電路 [5] 12V 42V 35W 93% F 1 - Z) 3.5 30V 優點:二極體耐壓規 格較低 缺點:二極體仍需加 裝緩震電路 [6] 26V 1 44V 單組 最南 750V 150W 94.7% 28.8 200V- 100A*2 250V- 23A*2 優點:柔性切換高效 率高昇壓比 缺點:成本高架構複 雜 本 創 作 12V 1 40V 400V 370W 97.8% (輸入24V) v \-D 33.0 8〇ν-71Α-/2Λ4Α: 開關最高跨壓55V 13 1238589 【發明内容】 本發明所揭示「利用耦合電感雙向磁路能量傳遞之高昇 壓比換流器」第一較佳實施例之方塊圖,如圖丨所示。^二 輸入電路101之直流電壓〜,於一次側電路1〇2之功率半導= 開關e導通時’電流將能量儲存於耦合電感^之一次側结租 A,同時二次側電路1〇4耦合電感^之二次側繞組々因且:向 電流導通迴路,所感應之電壓Vi2(此時極性點為正),串ς一 再生被動式緩震電路103之箝制電容ς電壓,經由功率半導體 開關e與放電二極體乃2迴路’對二次侧電路1〇4高壓電 · 電(充電電流為-ii2)。當功率半導體開關減止瞬間,」次 侧電路102電流離開功率半導體0開關,經由再生被動式緩 電路103之㈣二極❿流人該電路之箝制電容^。待輕合電 感之二次側繞組’依據磁通不滅定理’ 一次側激磁;流 將二次側電流轉向m波電⑽5之整紅極體% 注入該電路之it波電容q ’取得穩定之直流電壓直°流 出電路106將負載心與本換流器作一連接線路。 本發明所揭示「利用輕合電感雙向磁路能量傳遞之高昇# 壓比換流器」電路時序與卫作模式,分別如圖⑽圖4所干。 =利:圖3及圖4詳述本創作之工作原理,同時為使說明 t間易於瞭解’專有名詞不至於冗長,除電^在圖3定義為 ^入極性點為正,其餘以圖4該所屬模式圖為依據。以下内 容至對照功效部分,電路歸屬㈣(如·..電路igi)省略之, 直接對照說明所屬圖式即可明瞭· 模式一:時間hi);開關e導通一段時間 1238589 耦合電感7;—次側繞組A之電流&為一次側感應電流^及 :電机、所組成。一次侧感應電流(來自理想變壓器感應 ^二次側繞組…次側感應電流G而激磁電流激磁電 “所產生’主要於開關2導通時儲存能量,開關峨止後再 傳遞給二次側繞組&。此時’上述三者電流(、。及L全部流 絰開關0,其中二次側繞組&感應極性點為正電壓,串聯一 =生被動式緩震電路箝制電容ς之電壓、,經由開關2及放 電-極體A對二次側電路之高壓電容q充電,此路徑為達成 雙向磁路能量傳遞之關鍵技術。 · 、此期間,開關2電流^等於吋ζ·“η2,由於激磁電流。為 電感儲存能量,電流由小逐漸上升,波形斜率為正;開關導 通瞬間,二次側電路之高壓電容q充電電流k為一週期之峰 值,並隨該電容電壓逐漸上升而下降m次側感應 電流纟產生,其值依匝數比等比例將l放大,電流纟波形斜^ 為負。因此一次侧繞組A之電流/£1為纟與‘兩者之和,又兩互 補特性,造成電流l趨近方波;同理前項加上二次側感應電 流l (高壓小電流)等於開關e電流、,其波形亦接近方波。 方波之電流波形代表意義有兩點:第一點,流經開關2電流 波形之漣波成为低,而開關導通損失與電流平方成正比,假 設在相同平均電流下,方波電流之平方和小於三角波電流平 方和,因此方波電流所造成開關ρ之導通損遠低於高漣波電 流。第二點,電流^與電流。兩者波形斜率相反,可以接受 更低之激磁電感An,代表耦合電感r 一次側繞組A匝數及鐵心 容量可大幅減少,一次側高電流所造成之銅損及鐵心損亦同 15 1238589 步降低。 模式二·時間h S);開關e觸發訊號截止瞬間 戸』關〇覦恭却缺冼丄a 0日/ 、,References Input Voltage Output Voltage Output Capacity Maximum Conversion Efficiency Voltage Gain and Multiple Switch Use Specifications or Waveforms Southernmost Voltage Comparison Comparison [1] 100V 150V 200W 97.4% 1.5 500V / 14A Advantages: Flexible switching Disadvantages: Boost ratio Low and large inductance capacity [2] 300V 400V 1.6kW 98,3% 1.3 500V / 20A Advantages: Flexible switching Disadvantages: Low boost ratio and high clamping voltage [3] 80V 200V 400W 97.5% 2.5 400V / 10A Advantages: Disadvantages of flexible switching: up to four times the boost ratio [4] 48V 1 75V 380V lkW 92.3% (75V-lkW) ^ ^ nD Ciy — y 1-D 8.0 250V / 14A 4 advantages in parallel · Simple structure and use Disadvantages of low conduction loss parts: Diodes need to be equipped with damping circuits [5] 12V 42V 35W 93% F 1-Z) 3.5 30V Advantages: Diodes with lower voltage specifications Disadvantages: Diodes still need to be equipped with damping Circuit [6] 26V 1 44V Southmost single 750V 150W 94.7% 28.8 200V- 100A * 2 250V- 23A * 2 Advantages: Flexible switching, high efficiency, high boost ratio Disadvantage: high cost, complicated architecture, original creation 12V 1 40V 400V 370W 97.8% (Input 24V) v \ -D 33.0 8〇ν-71Α- / 2 Λ4Α: The highest cross-voltage of the switch is 55V 13 1238589 [Summary of the invention] The block diagram of the first preferred embodiment of the "high step-up ratio converter using two-way magnetic circuit energy transfer using coupled inductors" disclosed in the present invention is shown in Figure 丨. ^ DC voltage of the two input circuits 101 ~, power semiconductance at the primary side circuit 102 = when the switch e is on, 'current stores energy in the coupled inductor ^ primary side lease A, and secondary side circuit 104 The secondary winding of the coupled inductor ^ is: and the current is conducted to the loop, the induced voltage Vi2 (the polarity point is positive at this time), a clamp capacitor voltage of the regenerative passive damping circuit 103 is connected in series, and the power semiconductor switch is passed e and the discharge diode are two circuits. The secondary side circuit 104 is high-voltage electricity (charge current is -ii2). When the power semiconductor switch decelerates momentarily, the current of the secondary circuit 102 leaves the power semiconductor 0 switch, and the second pole of the regenerative passive slow circuit 103 flows into the clamping capacitor of the circuit ^. The secondary-side winding of the light-closing inductor is to be 'excited according to the flux-theorem theorem'. The primary side is excited; the current turns the secondary-side current to m-wave electric current, 5% of the entire red pole body, and is injected into the circuit's it-wave capacitor q 'to obtain a stable DC. The voltage output circuit 106 connects the load core to the inverter. The circuit sequence and operation mode of the "high-rise # voltage ratio converter using light-duty inductor bidirectional magnetic circuit energy transfer" disclosed in the present invention are as shown in Fig. 4 and Fig. 4 respectively. = Profits: Figures 3 and 4 detail the working principle of this creation. At the same time, in order to make the description easy to understand, the proper term is not too verbose. The affiliated pattern diagram is based. The following content to the control function section, the circuit attribution (such as .. circuit igi) is omitted, and it can be understood by directly comparing the description of the mode. Mode 1: time hi); switch e is turned on for a period of time 1238589 coupling inductance 7;-times The current & of the side winding A is composed of the primary side induction current ^ and: the motor. Primary-side induction current (from the ideal transformer induction ^ secondary winding ... the secondary-side induction current G and the excitation current excite the electricity "produced" are mainly stored when the switch 2 is turned on, and then transferred to the secondary winding & At this time, the above three currents (,, and L all flow to switch 0, where the secondary winding & the induced polarity point is a positive voltage, and the series voltage of the passive capacitor clamped by the passive damping circuit. Switch 2 and discharge-pole body A charge the high-voltage capacitor q of the secondary circuit. This path is the key technology to achieve bidirectional magnetic circuit energy transfer. During this period, the current of switch 2 is equal to inch ζ · “η2. Current. Stores energy for the inductor, the current gradually rises from small, and the slope of the waveform is positive; at the moment when the switch is turned on, the high-voltage capacitor q charging current k of the secondary circuit is a peak value of one cycle, and decreases m times as the capacitor voltage gradually rises. The side induced current 纟 is generated, and its value is amplified by l in proportion to the turns ratio, and the current 纟 waveform is sloped ^ is negative. Therefore, the current of the primary side winding A / £ 1 is the sum of 纟 and ', and two complementary characteristics The current l approaches the square wave; similarly, the preceding item plus the secondary-side induced current l (high voltage and small current) is equal to the switch e current, and its waveform is close to the square wave. The current waveform of the square wave has two meanings: First, the ripple of the current waveform flowing through Switch 2 becomes low, and the conduction loss of the switch is proportional to the square of the current. It is assumed that the square sum of the square wave current is less than the sum of the square wave current at the same average current. Causes the conduction loss of the switch ρ to be much lower than the high ripple current. The second point is that the current ^ and the current. The waveform slopes of the two are opposite, and a lower excitation inductance An can be accepted, which represents the number of turns of the primary winding A and the core capacity of the coupled inductor r. Significantly reduced, the copper loss and core loss caused by the high current on the primary side are also reduced in steps of 15 1238589. Mode 2 · Time h S); Switch e triggers the signal cut-off moment 戸 关 觎 觎 觎 but lack 冼 丄 a 0 days / ,,
電壓vn可視為一穩定之低漣波直流電壓, 為一具高頻響應佳之 心至該電容,因此其 ’以確保開關電壓之 最大值。另’箝制二極體乃,必須為快速導通二極體,其耐壓 規格同於開關2,所以具低消耗功率與低導通電壓之蕭基二 極體為最佳選擇。 模式三:時間匕―〖3);二次側電流l轉向 在釋放二次側繞組z2漏感能量後,電流L於時間~時降為φ 令,一次側激磁電流。釋放能量,感應至二次側電流k緩十曼 上昇流出非極性點。二次側電流L對放電二極體A施以截止 所舄之逆向恢復電流,以建立其逆偏電壓〜,該電壓迫使淚 波電路之整流二極體%之逆向寄生電壓、逐漸釋放至零。兩 二極體/)2及%之電流總和等於二次侧電流k,同時之二次側 繞組A之漏感會限制電流變化速度以及二次侧電路必為小電 流特性,因此逆向恢復電流及順向導通電流很小。另外,由 於兩二極體A及%串聯跨接於濾波電路之濾波電容c◦及箝制 16 1238589 電容ς之間,基本上兩者電壓之和,等於輸出電壓c扣除箝 制電容C,電壓Vci,因此具有電壓箝制效果’其耐壓規格低於 輸出電Μ,當輸出默電壓在細¥以下時,可以直接使 基二極體。 杈式四:時間能量傳遞至輸出端 當遽波電路之整流二極體%逆向寄生電壓釋放為零 而導通’同時放電二極體A截止。直流電源電壓〜、一次側 激磁電流^所產生之-次側電Mvii、二次側繞 側電路向壓電容電壓Ve2串聯’以低電流型式對遽波電容 ^^並供應直流輸出電路之負載〜。激磁能量依據磁通 /疋在漏感能量耗盡後,搞合電感[仍會有—段時間 在7、二次侧電路提供電流,一次侧對箝制電容^充 ㈣次侧電流’二次側則對滤波電路及直流輸出電路 於模式四中期’高壓電容q電壓〜因持續放電下 同打柑制電容C,電壓v。長期充電而上昇,箝制二極體乃 逆偏截止。此時,一次侧電流/tl等於二次侧電流。 · 模式五:時間(,4—,5);開關0導通瞬間 開關e導通瞬間(,=0,由於箝制二極體A為低壓蕭基二 極體,開關2導通瞬間立即逆偏 制雷〜m、、h 感广次側漏感'限 ^ ;,L" V机至一次侧漏感之電流k則需要時間降至 零’兩漏感電流相互牽制, 指雷、、掛制二極體A逆偏無逆向恢 =1路彳==:㈣電路、二线電路與㈣二極體 '一二'壬可電流,自然形成零電流切換特性(zcs)。 此時電路電流仍缺維拷於 …隹待輪出側流向,但逐漸遞減中,因此本 17 1238589 創作導通時具柔性切換特性,減輕切換損失。 模式六:時間(,5-,。);二次側電流l轉向 漏感能量釋放後〇=/5),耦合電感Γ之二次側電流l轉向, 流入開關2,以小電流對濾波電路之整流二極體凡施以逆向 恢復電流,並同時導引放電二極體a導通。當放電二極體A 導通瞬間(,w。),完成一切換週期(Switching Cycle),接下來 工作模式則回到模式一的情形。 [公式推導] 令耦合電感7;之一次繞組Ζι與二次繞組&之匝數比 〃 = ,耦合係數々定義為 k-LJ{Lk^Lm) ⑴ 中An為激磁電感(又稱互感),々為—次侧繞組&漏感。 功率半導體開關ρ導通時,一次側激磁電感&之等效 壓、為The voltage vn can be regarded as a stable low-ripple DC voltage, which has a high-frequency response to the capacitor, so it is to ensure the maximum value of the switching voltage. In addition, the clamping diode must be a fast conducting diode, and its withstand voltage specification is the same as that of the switch 2. Therefore, a Schottky diode with low power consumption and low on voltage is the best choice. Mode 3: Time dagger ― 〖3); Secondary-side current l turns After releasing the leakage inductance energy of the secondary-side winding z2, the current L decreases to φ order over time, and the primary-side exciting current. The energy is released, and the secondary current k is induced to rise ten times slowly to flow out of the non-polar point. The secondary-side current L applies a reverse recovery current to the discharge diode A to establish its reverse bias voltage ~, which forces the reverse parasitic voltage of the rectified diode% of the tear wave circuit to gradually release to zero. . The sum of the currents of the two diodes /) 2 and% is equal to the secondary side current k. At the same time, the leakage inductance of the secondary side winding A will limit the current change rate and the secondary side circuit must have a small current characteristic. Therefore, the reverse recovery current and The forward current is small. In addition, since two diodes A and% are connected in series between the filter capacitor c of the filter circuit and the clamp capacitor 16 1238589, basically the sum of the two voltages is equal to the output voltage c minus the clamp capacitor C and the voltage Vci, Therefore, it has a voltage clamping effect. Its withstand voltage specification is lower than the output voltage. When the output silent voltage is less than ¥, the base diode can be directly used. Type 4: Time energy is transferred to the output terminal. When the reverse parasitic voltage of the rectified diode% of the wave circuit is released to zero and turned on, the discharge diode A is turned off. DC power supply voltage ~, generated by primary-side excitation current ^-secondary-side electricity Mvii, secondary-side winding circuit connected in series to piezo-capacitor voltage Ve2 ', low-current type is applied to the wave capacitor ^^ and supplies the load of the DC output circuit ~. The excitation energy is based on the magnetic flux / 疋. After the leakage inductance energy is exhausted, the inductance [is still there—the current will be provided in the secondary circuit for a period of time. The primary side will charge the clamping capacitor. Then the filter circuit and the DC output circuit are in the middle of the fourth phase of the high-voltage capacitor q voltage ~ because of continuous discharge, the capacitor C and the voltage v are simultaneously hit. It rises after long-term charging, and the clamping diode is reversed. At this time, the primary current / tl is equal to the secondary current. · Mode 5: time (, 4—, 5); switch 0 is turned on instantaneously and switch e is turned on instantaneously (, = 0, because clamping diode A is a low-voltage Schottky diode, switch 2 is turned on immediately and reverse biased lightning is turned on immediately ~ m ,, h sense wide side leakage inductance 'Limit ^ ;, L " The current k from the V machine to the primary side leakage inductance needs time to drop to zero. The two leakage inductance currents are pinned by each other, and the lightning, and hanging diodes A reverse bias without reverse recovery = 1 road ===: The circuit, the second-wire circuit and the ㈣diode 'one or two' are non-current, which naturally forms the zero-current switching characteristic (zcs). At this time, the circuit current is still lacking dimensions. … Wait for the flow direction on the exit side, but it is gradually decreasing, so Ben 17 1238589 has a flexible switching characteristic when switching on to reduce switching losses. Mode 6: Time (, 5-,.); Secondary side current l turns to leakage inductance energy After the release (0 = / 5), the secondary current l of the coupling inductor Γ is turned and flows into the switch 2. The reverse current is applied to the rectifier diode of the filter circuit with a small current, and the discharge diode a is guided at the same time. Continuity. When the discharge diode A is turned on instantaneously (, w.), A switching cycle is completed, and then the working mode returns to the mode one. [Formula derivation] Let the coupling inductor 7; the primary winding Zι and the secondary winding & turns ratio 〃 =, the coupling coefficient 々 is defined as k-LJ {Lk ^ Lm) ⑴ An is the excitation inductance (also known as mutual inductance) , 々 is-secondary winding & leakage inductance. When the power semiconductor switch ρ is turned on, the equivalent voltage of the primary excitation inductance & is
^ (2X 且一次側繞組&感應在極性點為正之電壓L為 '2=nvu=:nkV!N (3) 人側繞組感應之電壓〜串聯—再生被動式緩震電路 :制%谷C,之電壓,對二次側電路高壓電容q充電,因 此高壓電容c2之電壓〜為^ (2X and the primary side winding & the positive voltage at the polarity point L is' 2 = nvu =: nkV! N (3) the voltage induced by the human side winding ~ series-regenerative passive damping circuit: the control valley C, Voltage of the secondary circuit high voltage capacitor q, so the voltage of the high voltage capacitor c2 is
Vc2^^-+V- (4) 5 = 2戴止時’一次側電路之漏感々維持續流至再生被動式 、、友震電路之箝制電容ς,一直到二次側電流反應激磁電紅 18 1238589 能 量’依據-次側减U壓平衡理論,其料週期β η 一 一 _一 .ν . ▲ ▲Vc2 ^^-+ V- (4) 5 = 2 When wearing, the leakage inductance of the primary circuit continues to flow to the regenerative passive, clamping capacitor of the friendly circuit, until the secondary side current reacts to the magnetoelectric red 18 1238589 Energy 'is based on the secondary-side pressure reduction U pressure balance theory, and its material period β η one one_ one. Ν. ▲ ▲
Dl ^tL/Ts =2(l-D)/(n + l) Wt 其中A為開關切換週期’ Z)為開關責任週期 Λ Q為杈式二與模 式二日寸間之和,換言之’為一次側繞組漏感⑶放能量所需 要之時間,因此漏感I,釋放能量之電壓〜(靠近開 之電壓為正) ”2(1, - (6) 激磁電感\之電壓、(靠近開關2接點為正)等於(7) 因此箝制電容Cl之電壓VC1可以表示如下Dl ^ tL / Ts = 2 (lD) / (n + l) Wt where A is the switching cycle 'Z) is the switching duty cycle Λ Q is the sum of the two-inch and two-inch modes, in other words, the primary side Winding leakage inductance ⑶ the time required to discharge energy, so leakage inductance I, voltage to release energy ~ (voltage close to open is positive) ”2 (1,-(6) voltage of excitation inductance \ (close to switch 2 contact Is positive) is equal to (7), so the voltage VC1 of the clamping capacitor Cl can be expressed as follows
Vci ^VLk ^VLm^VIN -Vin ^ D{\-k){n-\) ~2{\-D)—Vci ^ VLk ^ VLm ^ VIN -Vin ^ D (\-k) {n- \) ~ 2 {\-D) —
DS ⑻ 同時電U為開關⑽承受之電壓。因此方程式(4)可以重 新改寫成為 vC2=[.+l±»zl)]Fw (9) 田開關0截止日寸’ |馬合電感Γ二次側繞組^在非極性點處,電 壓為正,其值為 vi2 = knvLm = Dkn VIN /(1 - D) 此時電壓 (10)DS ⑻ At the same time, U is the voltage to which switch ⑽ is subjected. Therefore, equation (4) can be rewritten as vC2 = [. + L ± »zl)] Fw (9) Tian switch 0 cut-off inch '| Ma He inductor Γ secondary side winding ^ at the non-polar point, the voltage is positive , Its value is vi2 = knvLm = Dkn VIN / (1-D) at this time the voltage (10)
Cl 出直流電壓^ VC2及VZ2一者,對濾波電容Q與負載心放電,輸 v0 = vcx + vC2 + νΛ2 ί-Ζ) 取 (Π) 因此,換流器電壓增益可表示為 GV] =^- = —n^+D(l~ k){n^ 1) 、Cl outputs DC voltage ^ VC2 and VZ2, discharge filter capacitor Q and load core, and input v0 = vcx + vC2 + νΛ2 ί-Z) Take (Π) Therefore, the converter voltage gain can be expressed as GV] = ^ -= --N ^ + D (l ~ k) (n ^ 1),
VlN U 1 一 Z) (12) 19 1238589VlN U 1 1 Z) (12) 19 1238589
將耦合係數& = 1代入方程式(12),匝數比”分別為1、2、4、6 及8時,責任週期i)與換流器電壓增益^曲線,如圖5(a)所示。 再將上圖數據擇一匝數比”二6固定,辆合係數Μ足〇·9逐漸提 高至1,繪製責任週期D與換流器電壓增益Gn曲線,如圖5(b) 所示。依據兩圖分析耦合係數《對於電壓增益心之影響有限, 因此可以將耦合係數設定為1,俾利於分析換流器特性。令 辆合係數&等於1時,方程式(12)第二項為零,換流器電壓增 益可以簡化成 _V0 _ 2-l· η 倘若設定責任週期為0.5時,將方程式(13)除以與參考文獻[4] 及[5]電壓增益方程式,恰巧為二,表示本創電壓增益將高出 參考文獻[4]及[5]—倍。圖5(a)中標示為本發明所揭示「利 用耦合電感雙向磁路能量傳遞之高昇壓比換流器」電壓增益 曲線,而實線部分為習用耦合電感電路之電壓增益曲線(圖 2(b)),同樣匝數比條件下,本創作之昇壓比高於習用耦合電 感電路及參考文獻,尤其是責任週期越小之處,其差距越籲 大,證明本創作有更寬裕的責任週期調整空間。例如W = 6,Z) = 0.8 代入,可以得到40倍電壓增益輸出。 將耦合係數*等於1代入方程式(8),可簡化成 vDS=ViN/(l-D) (14) 再代入方程式(13)可以得到開關所承受之電壓值如下 vDS=V0/(n-^2) (15) 觀察方程式(15),將輸出電壓G及匝數比〃固定,開關2所 承受電壓與輸入電壓‘及責任週期β無關,因此可以確保功 20 1238589 率半導體開關元件之所承受最高電壓為定值。只要輸入電壓 不高於開關2耐壓,依據方程式(15)所設計之換流器,配合原 本高電壓增益比之特性,可接受高、低電壓大範圍變動之輸 入電壓,如太陽能、風力發電機及燃料電池等。另外,可以 將直流蓄能裝置,利用本創作昇壓並調節電壓’提供反流器、 交直流馬達控制裝置之前端電源或直接應用電路裝置,作為 緊急電源或維持高電力品質之電力調節裝置。 本發明係針對國内外文獻及習用電路改善先前技術之原籲 理及對照功效如下: 1.耦合電感僅需低匝數比與寬裕調整之責任週期,即可輸出 高電壓增益。耦合電感之匝數比過高,於繞製線圈時,繞 組一、二次側無法緊密結合,耦合係數隨之下降,減少輸 出電壓。其次,當開關導通時,二次側線圈電壓逆偏,該 電壓正比直流輸入電壓乘以匝數比,整流二極體必須承受 此電壓加上輸出電路之高電壓值。雖然調高匝數比,可獲 得較低之開關箝制電壓與寬裕之責任週期控制,但是高壓_ 側二極體耐壓問題不易處理,更何況還有切換時,來自高 壓側繞組之突波電壓成分。另外’責任週期太低時’電感 電流處於不連續模式,開關漣波增加,其表示電流呈現鋸 齒波形,例如MOSFET開關導通損係與電流平方成正比, 所以相較於方波電流,同樣供應功率條件下,鋸齒電流波 形易使開關損失較高。責任週期接近一時,固然可以改善 開關導通損失,但在高壓側二極體所承受之電壓、電流應 力將有嚴苛的考驗。首先只有極少時間傳送全部之容量, 21 1238589 二極體必須承受瞬間大電流^其次前項所述之突波電壓問 題,因此切換責任週期過高,必須提高二極體之容量,同 時損失隨之增加。總而言之,一昧調高匝數比以獲得高升 壓比,將會有嚴峻的考驗。 2.再生被動式緩震電路可以吸收線路電感能量,使得佈線容 易,有利產業利用性。目前文獻中所使用之缓震電路 (Snubber)大致分成被動式(Passive)(由電容、電阻及二極 體組成)、主動式(Active)(附加輔助開關、電容及二極體¥ 及再生被動式(Passive Regenerative)(電容及二極體)三種, 主要吸收影響電壓箝制之電感以及二極體逆向恢復電流之 能量。被動式緩震電路之電容能量全部由電阻消耗,因此 效率最差。主動式缓震電路需額外增加開關及控制電路, 同時内部環流亦是另一需要克服的問題。再生被動式緩震 電路先吸收影響電壓箝制之能量,再利用原電路特性送到 輸出端,所需電路元件最少,僅增加些許開關切換損失, 即可達成另一個昇壓輔助電路,其效率最高。 φ 切換式電路瞬間電流高變化率,一般都是突波電壓產 生之主因。由於功率是電壓與電流之乘積,在低壓直流電 源輸入之電流特別高,因此只要些許雜散電感存在即會造 成突波電壓。雜散電感主要來自於配線不當之互感、導線 内之電感及元件内部等效電感。突波電壓將直接反映在開 關兩側而燒毀,為保護開關,於最近兩端併聯高容量電容 即可獲得到電壓箝制效果。此外,這些突波電流迅速導引 至再生被動式緩震電路後,輸出端迴路即無高充電電流與 22 1238589 漣波電壓,達成雙重抑制突波之目的,因此既使線路電感 再大,亦不會影響箝制效果。一般而言,欲達成高電流與 低互感之配線,將是一個實務上具挑戰課題,本電路將有 效降低線路互感之影響。 3. 再生被動式緩震電路電容所吸收能量可以再運用於昇壓, 無環流問題,進一步達成電壓箝制目的。本創作不單將缓 震電路之能量送出輸出端,而且過程中串入電壓箝制之一 環,進一步壓低開關所需承受之電壓,同時提供二次側繞$ 組雙向電流迴路之關鍵架構。 4. 開關所需承受電壓與輸入電壓無關,適合電壓高變動範圍 之直流電源轉換裝置。本創作由公式推導及實驗驗證,開 關所需承受電壓取決於輸出電壓與匝數比,在各種電壓及 負載變動下,開關之最高承受電壓約為55V,因此與輸入 電壓及責任週期比無關,不用擔心輸入電壓及責任週期調 整變化期間,箝制電壓會過壓而造成開關損壞。當然必要 條件是直流輸入電壓不可高過開關耐壓。 φ 5. 所有二極體皆可達成電壓箝制功能,無開關導通時二極體 短路電流及逆向高恢復電流之問題。再生被動式緩震電路 所使用之放電二極體兩端分別銜接箝制電容與濾波電路, 其逆向電壓高於輸出電壓與箝制電容電壓之差值時,濾波 電路之整流二極體導通。因此所承受電壓低於輸出電壓, 不需加裝額外缓震電路。所使用耐壓規格越低,二極體導 通損隨之降低。濾波電路所使用之整流二極體,逆向電壓 高於輸出電壓與箝制電容電壓之差值時,再生被動式緩震 23 1238589 電路所使用之放電二極體導通,因此所承受電壓低於輸出 電壓,亦勿需加裝其他緩震電路,該二極體與再生被動式 緩震電路所使用之放電二極體互補導通,因此二極體逆向 恢復電流低,並相互達成電壓箝制之功效。 6. 轉換效率高。本創作在非隔離架構下,嚴謹區分低壓大電 流及高壓低電流特性,且電流漣波低。導通週期於百分之 五十時,同樣輸出功率下,開關電流可以獲得最低有效值, 形成最高效率區域。是故,元件之額定分別可選用較低之$ 電壓與電流範圍,以達成低成本、高效率換流器裝置。 7. 架構簡單。相較於習用耦合電感電路,僅增加兩個二極體 與兩個電容,然而本專利昇壓比例遠高於習用電路,特別 是再生被動式緩震電路之電壓與雙向能量傳遞功能,可以 充分提高昇壓比例。 8. 耦合電感之容量低於習用電路。耦合電感具有變壓器一次 侧電流導通,二次侧立即輸出電流之特性。依據理想變壓 器分析,此時二次侧所傳遞能量致使鐵心產生之淨磁通為φ 零,並不增加鐵心磁通量之負擔。該一次侧激磁電流於功 率半導體開關截止時,以返驰式變壓器原理傳送能量至二 次側繞組,二次侧繞組電流反向以懸殊比例之低電流對濾 波電路充電。一般架構欲產生低漣波充電電流,變壓器必 須設計採高電感值,因此本創作所設計之低激磁電感意味 著大幅壓縮功率半導體開關之電流漣波,鐵心之容量隨之 減少。 9. 變壓器銅損較低。本創作之架構,容許高漣波之激磁電流, 24 1238589 可設計低激磁電感之耦合電感,所以大電流所流經一次側 繞組所需之匝數少,致使因集膚效應所產生之銅損以及激 磁損亦可望降低。 ίο·電磁干擾易處理。劇烈變化之電流,可以侷限在一次侧電 路,方便電磁干擾之防制處理。 【實施方式】 茲說明本創作所有實施例通用規格如后。主要元件_功率馨 半導體開關2選用MOSFET,編號為FQI90N08,導通電P旦 1_=16μΩ,耐壓8〇v以及額定電流71A,包裝型式/2以尺。設 定額定輸出電壓400V,開關最高箝制電壓為50V,俾利亦可 使用75V之低導通損開關,將上述數據代入方程式(15),決 定耦合電感匝數比^2為When the coupling coefficient & = 1 is substituted into equation (12) and the turns ratios are 1, 2, 4, 6, and 8, respectively, the duty cycle i) and the converter voltage gain curve are shown in Figure 5 (a). Then the data in the above figure is fixed to a ratio of "2 to 6", and the vehicle combination coefficient M is gradually increased to 1, and the duty cycle D and the converter voltage gain Gn curve are plotted, as shown in Figure 5 (b). Show. According to the two figures, the analysis of the coupling coefficient "has a limited effect on the voltage gain center, so the coupling coefficient can be set to 1, which is beneficial for analyzing the characteristics of the inverter. When the combined coefficient & is equal to 1, the second term of equation (12) is zero, and the converter voltage gain can be simplified to _V0 _ 2-l · η. If the duty cycle is set to 0.5, divide equation (13) The voltage gain equations with references [4] and [5], which happen to be two, indicate that the original voltage gain will be two times higher than those in references [4] and [5]. Figure 5 (a) shows the voltage gain curve of the "high boost ratio converter utilizing bidirectional magnetic circuit energy transfer" disclosed by the present invention, and the solid line is the voltage gain curve of the conventional coupled inductor circuit (Figure 2 ( b)), under the same turns ratio condition, the boost ratio of this creation is higher than the conventional coupled inductor circuit and references, especially the smaller the duty cycle, the larger the gap, which proves that this creation has a wider responsibility Cycle adjustment space. For example, W = 6, Z) = 0.8, you can get 40 times the voltage gain output. Substituting the coupling coefficient * equal to 1 into equation (8) can be simplified to vDS = ViN / (lD) (14) Substituting into equation (13) can obtain the voltage value that the switch withstands as follows: vDS = V0 / (n- ^ 2) (15) Observing equation (15), the output voltage G and the turns ratio 〃 are fixed. The voltage on switch 2 is independent of the input voltage 'and the duty cycle β, so it can ensure the highest voltage that the semiconductor switching element can withstand. Is a fixed value. As long as the input voltage is not higher than the withstand voltage of switch 2, the converter designed according to equation (15), with the characteristics of the original high voltage gain ratio, can accept high and low voltage wide range input voltages, such as solar and wind power. Motors and fuel cells. In addition, a DC energy storage device can be used to boost and regulate the voltage to provide inverters, AC-DC motor control devices, front-end power supplies, or directly applied circuit devices as emergency power supplies or power conditioning devices that maintain high power quality. The present invention is based on domestic and foreign literature and conventional circuits to improve the original appeal and control efficiency of the prior art as follows: 1. The coupled inductor only needs a low turn ratio and a duty cycle with ample adjustment to output a high voltage gain. The turns ratio of the coupled inductor is too high. When winding the coil, the primary and secondary sides of the winding cannot be tightly coupled, and the coupling coefficient decreases accordingly, reducing the output voltage. Secondly, when the switch is turned on, the secondary coil voltage is reverse biased. This voltage is proportional to the DC input voltage multiplied by the turns ratio. The rectifier diode must withstand this voltage plus the high voltage value of the output circuit. Although the turn ratio is increased, a lower switching clamping voltage and a wider duty cycle control can be obtained, but the problem of withstand voltage on the high voltage side diode is not easy to handle, not to mention the surge voltage from the high voltage side winding during switching. ingredient. In addition, when the duty cycle is too low, the inductor current is in discontinuous mode, and the switching ripple increases, which indicates that the current has a sawtooth waveform. For example, the MOSFET switch on-state loss is proportional to the square of the current, so compared to the square wave current, it also supplies power. Under the conditions, the sawtooth current waveform easily causes higher switching losses. The duty cycle is close to one time, although the switch conduction loss can be improved, but the voltage and current stress on the high-voltage side diode will be severely tested. First, there is very little time to transfer the full capacity. 21 1238589 The diode must withstand the instantaneous high current ^ Second, the surge voltage problem described in the previous paragraph, so the switching responsibility period is too high, the capacity of the diode must be increased, and the loss will increase. . All in all, raising the turns ratio to obtain a high boost ratio will have a severe test. 2. The regenerative passive cushioning circuit can absorb the inductance energy of the line, make the wiring easy, and benefit the industrial utilization. The snubber circuits currently used in the literature are roughly divided into passive (composed of capacitors, resistors and diodes), active (additional auxiliary switches, capacitors and diodes ¥ and regenerative passive ( Passive Regenerative (capacitance and diode) mainly absorbs the energy that affects the voltage clamping inductance and the reverse recovery current of the diode. The capacitive energy of the passive damping circuit is all consumed by the resistor, so the efficiency is the worst. Active damping The circuit needs additional switches and control circuits. At the same time, the internal circulation is another problem to be overcome. Regenerative passive damping circuits first absorb the energy that affects voltage clamping, and then use the original circuit characteristics to send to the output. The required circuit components are minimal. With only a small increase in switching loss, another booster auxiliary circuit can be achieved, which has the highest efficiency. Φ Switching circuits have a high instantaneous current change rate, which is generally the main cause of surge voltage. Because power is the product of voltage and current, The current input in the low-voltage DC power supply is particularly high, so as long as some stray inductance is present Surge voltage. Stray inductance mainly comes from improper mutual inductance in wiring, inductance in wires and equivalent inductance inside components. Surge voltage will be directly reflected on both sides of the switch and burned out. In order to protect the switch, it is connected in parallel at the nearest two terminals. Capacitors can achieve the voltage clamping effect. In addition, after these surge currents are quickly guided to the regenerative passive cushioning circuit, the output circuit is free of high charging current and 22 1238589 ripple voltage, achieving the purpose of double suppression of surges. Therefore, no matter how large the line inductance is, it will not affect the clamping effect. Generally speaking, it is a practically challenging issue to achieve high current and low mutual inductance wiring. This circuit will effectively reduce the influence of line mutual inductance. 3. The energy absorbed by the regenerative passive damping circuit capacitor can be reused for boosting, no circulating current problem, and further achieve the purpose of voltage clamping. This creation not only sends the energy of the damping circuit out of the output, but also loops into the voltage clamping loop in the process, further Depress the voltage that the switch needs to withstand, while providing the key architecture of the secondary side-wound bidirectional current loop 4. The voltage required by the switch has nothing to do with the input voltage, and is suitable for DC power conversion devices with high voltage fluctuation ranges. This creation is derived by formula and verified by experiments. The voltage required by the switch depends on the output voltage and the turns ratio. Under load changes, the maximum withstand voltage of the switch is about 55V, so it has nothing to do with the input voltage and duty cycle ratio. Don't worry about the clamping voltage will overvoltage during the change of input voltage and duty cycle adjustment and cause switch damage. Of course the necessary condition is DC The input voltage cannot be higher than the withstand voltage of the switch. Φ 5. All diodes can achieve the voltage clamping function, without the problem of diode short-circuit current and reverse high recovery current when the switch is on. The discharge used in regenerative passive damping circuit The two ends of the pole body are respectively connected to the clamp capacitor and the filter circuit. When the reverse voltage is higher than the difference between the output voltage and the clamp capacitor voltage, the rectifier diode of the filter circuit is turned on. Therefore, the withstand voltage is lower than the output voltage, and there is no need to install an additional damping circuit. The lower the withstand voltage specification used, the lower the diode conduction loss will be. When the reverse voltage of the rectifier diode used in the filter circuit is higher than the difference between the output voltage and the clamp capacitor voltage, the regenerative passive cushioning 23 1238589 is used to turn on the discharge diode, so the voltage it bears is lower than the output voltage. There is also no need to install other damping circuits. The diode and the discharge diode used in the regenerative passive damping circuit are connected in a complementary manner, so the reverse recovery current of the diode is low and the voltage clamping effect is achieved. 6. High conversion efficiency. In this non-isolated architecture, the characteristics of low-voltage high-current and high-voltage low-current are strictly distinguished, and the current ripple is low. When the on-period is 50%, at the same output power, the switching current can obtain the lowest effective value, forming the highest efficiency region. Therefore, the lower voltage and current ranges of the components can be selected respectively to achieve low-cost and high-efficiency converter devices. 7. Simple architecture. Compared with the conventional coupled inductor circuit, only two diodes and two capacitors are added. However, the voltage boost ratio of this patent is much higher than the conventional circuit, especially the voltage and bidirectional energy transfer function of the regenerative passive cushioning circuit, which can fully improve Boost ratio. 8. The capacity of the coupled inductor is lower than the conventional circuit. The coupled inductor has the characteristics that the primary side of the transformer is conducting, and the secondary side immediately outputs current. According to the analysis of an ideal transformer, at this time, the energy transmitted by the secondary side causes the net magnetic flux generated by the core to be φ zero, without increasing the burden of the core magnetic flux. When the power semiconductor switch is turned off, the primary-side excitation current transfers energy to the secondary-side winding based on the principle of a flyback transformer. The secondary-side winding current reversely charges the filter circuit with a low proportion of current. In order to generate a low ripple charging current in a general architecture, the transformer must be designed with a high inductance value. Therefore, the low magnetic field inductance designed in this creation means that the current ripple of the power semiconductor switch is greatly compressed, and the core capacity is reduced accordingly. 9. Transformer copper loss is low. The structure of this creation allows high ripple excitation current. 24 1238589 Coupling inductance with low excitation inductance can be designed, so the small number of turns required for high current to flow through the primary winding, resulting in copper loss and excitation due to skin effect. Losses are also expected to decrease. ίο · Electromagnetic interference is easy to handle. The sharply changing current can be limited to the primary circuit, which is convenient for the prevention and treatment of electromagnetic interference. [Embodiment] The general specifications of all the embodiments of the present invention are described below. The main component _ power Xin The semiconductor switch 2 uses a MOSFET, the number is FQI90N08, the conduction is P 1 1 = 16 μΩ, the withstand voltage is 80V and the rated current is 71A, and the package type is 2 feet. Set the rated output voltage to 400V and the maximum clamping voltage of the switch to 50V. We can also use a low conduction loss switch with 75V. Substitute the above data into equation (15) and determine the coupling inductor turns ratio ^ 2 as
vD η = —2 = 6 /1 ζ:\ V^(max) (1 … 依據方程式(13)計算輸入最低電壓為10V且輸出電壓為4〇〇v 時,責任週期i)為0.8,此為實務尚可接受之值。本創作切換· 頻率100kHz,為一般業界所常用高頻切換頻率,其餘詳細之 規格說明如下vD η = —2 = 6/1 ζ: \ V ^ (max) (1… According to equation (13), when the minimum input voltage is 10V and the output voltage is 400v, the duty cycle i) is 0.8, which is Acceptable value in practice. This creative switching frequency is 100kHz, which is a high-frequency switching frequency commonly used in the general industry. The remaining detailed specifications are as follows
v0 : 400VDCv0: 400VDC
Tr · Α =470/^/;^ =3:i8;k=0.98;core: EE-55Tr · Α = 470 / ^ /; ^ = 3: i8; k = 0.98; core: EE-55
Q : FQI90N08: 80V/71A 才*準值4_=12禮,隶大值1⑽,/2/MA: CJN : 3300/^/50F* 2 25 1238589Q: FQI90N08: 80V / 71A only * 4 == 12 courtesy value, 1⑽, 2 / MA: CJN: 3300 / ^ / 50F * 2 25 1238589
C, : 5/zF/100F C2 ·· 6.8wF/250F C〇 : 47uF/450VC,: 5 / zF / 100F C2 · 6.8wF / 250F C〇: 47uF / 450V
dx: STPS20H100CT, 100V/2*10A (schottky) ? TO-220ABdx: STPS20H100CT, 100V / 2 * 10A (schottky)? TO-220AB
H SFA1606G,400V/16A,TO220AB 為使進一步暸解本創作之内容,以下實施例之實驗波 形,元件之電壓、電流之代號,敬請參閱圖4。為驗證本發 明所揭示「利用耦合電感雙向磁路能量傳遞之高昇壓比換流 器」,具有電壓變動箝制功能與高容量高轉換效率之效能,® 圖6所示為應用於燃料電池昇壓至400V,各元件電壓及電流 波形。本實施例直流輸入電路101之直流電源,採美國H_H SFA1606G, 400V / 16A, TO220AB In order to further understand the content of this creation, the experimental waveforms of the following examples, the code of the component voltage and current, please refer to Figure 4. In order to verify the "high boost ratio converter utilizing bidirectional magnetic circuit energy transfer using a coupled inductor" disclosed in the present invention, it has the function of voltage fluctuation clamping function and high capacity and high conversion efficiency. To 400V, the voltage and current waveform of each element. The DC power supply of the DC input circuit 101 in this embodiment uses the US H_
Power公司所生產之燃料電池p〇werPEMTM-PS250,此燃料 電池之額定輸出功率為250W,輸出電壓範圍約在38V (無载) 至25V ( 386W最大功率輸出)。本實施例之測試條件為The fuel cell p0werPEMTM-PS250 produced by Power Company has a rated output power of 250W and an output voltage range from 38V (no load) to 25V (386W maximum power output). The test conditions of this example are
400V-300W之輸出規格,燃料電池在該負載條件下,所提供 之電壓為28V。觀察圖6(a)_(j),MOSFET兩端電壓vD5箝制在 50V ’電流k接近方波,顯示開關具有較佳利用率。同理, 一次側電路繞組A之電流L維持約在20A,對I3淖的電感值而 言’鐵心所需之容量並不大。開關導通責任週期〇·44,仍有 相當寬裕調整空間應付輸入電壓變動、負載效應及提高輸出 電壓。高壓侧之電流遠小於低壓側電流,表示本創作已完全 達成高、低壓側的電壓及電流分野之目的。檢視所有二極體 電壓及電流波形,逆向恢復電流低於導通電流且未加裝緩震 電路下,二極體兩端不存在突波電壓,而且低於輸出電壓 26 1238589 400V,所以二極體已達成電壓箝制及柔性切換效果。圖6(k) 所示為本創作400V,20W至300W瞬間加載及降載之輸出電 壓電流響應’依照波形顯示,電壓漣波遠低於1%以下,又因 激磁電感小,能量調節快速,所以負載劇烈變動下,電壓變 動率非常低。 燃料電池發電系統另一實施例如圖7所揭示,測試條件 為負載從32W逐步提高至372W,測量開關之電壓及電流波 形。當輸出功率增加時,燃料電池電壓下降,需要調高責任· 週期,進而增加電壓增益以維持固定輸出電壓,此時開關2 兩端電壓、仍箝制在50V左右。由電流波形顯示,輸入直流 電壓電流接近低漣波之方波電流。 圖8為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」實施例之一應用於燃料電池昇壓至400V 轉換效率。本實施例為驗證理論之可行性,效率之計算並不 包含驅動信號電路所消耗之功率。本創作輸出功率操作於 2〇OW以下時,具有參考文獻[1]所述耦合電感7;之漏感A與開鲁 關2之寄生電容c⑽諧振現象,如圖7(a)顯示之〜波形’開關 ρ導通時,電壓k低於箝制電壓,因此切換損失較低。由於 無環流問題,開關於低壓使用,切換損及導通損比例很低, 因此本裝置在40W功率輸出時,效率已超過94.5% ’敢南效 率超過97%,此部分亦可以用一般常用電路軟體即可證明。 當輸出功率越高時,燃料電池電壓亦隨該發電曲線降低。For the output specifications of 400V-300W, the fuel cell provides 28V under this load condition. Observing Fig. 6 (a) _ (j), the voltage vD5 across the MOSFET is clamped at 50V 'and the current k is close to a square wave, indicating that the switch has a better utilization rate. In the same way, the current L of the primary circuit winding A is maintained at about 20A, and the required capacity of the core is not large for the inductance value of I3 淖. The switch on duty cycle is 0.44, and there is still ample room for adjustment to cope with input voltage fluctuations, load effects, and increase output voltage. The current on the high-voltage side is much smaller than the current on the low-voltage side, which means that the purpose of this work is to completely achieve the division of voltage and current on the high- and low-voltage sides. Check the voltage and current waveforms of all diodes. Under the condition that the reverse recovery current is lower than the on-current and no damping circuit is installed, there is no surge voltage at the two ends of the diode, and it is lower than the output voltage 26 1238589 400V. Voltage clamping and flexible switching effects have been achieved. Figure 6 (k) shows the output voltage and current response of 400V, 20W to 300W instantaneous loading and deloading according to the waveform. According to the waveform display, the voltage ripple is far below 1%, and the energy regulation is fast due to the small excitation inductance. Therefore, under severe load changes, the voltage change rate is very low. Another embodiment of the fuel cell power generation system is disclosed in FIG. 7. The test condition is that the load is gradually increased from 32W to 372W, and the voltage and current waveforms of the switch are measured. When the output power increases, the fuel cell voltage decreases, and the duty cycle needs to be increased to increase the voltage gain to maintain a fixed output voltage. At this time, the voltage across Switch 2 is still clamped at about 50V. The current waveform shows that the input DC voltage current is close to the square wave current of low ripple. FIG. 8 is one of the embodiments of the “high boost ratio converter utilizing bidirectional magnetic circuit energy transfer using a coupled inductor” disclosed in the present invention applied to a fuel cell boosting to 400V conversion efficiency. This example is to verify the feasibility of the theory. The calculation of efficiency does not include the power consumed by the driving signal circuit. When the output power of this creative is below 20OW, it has the coupling inductance 7 described in reference [1]; the leakage inductance A and the parasitic capacitance c⑽ resonance phenomenon of on / off 2 are shown in Figure 7 (a). 'When the switch ρ is turned on, the voltage k is lower than the clamping voltage, so the switching loss is low. Because there is no circulation problem, the switch is used at low voltage, and the ratio of switching loss and conduction loss is very low. Therefore, the efficiency of this device has exceeded 94.5% at 40W power output. 'Dare South efficiency exceeds 97%, this part can also use common circuit software You can prove it. When the output power is higher, the fuel cell voltage also decreases with the power generation curve.
圖9為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之向昇壓比換流器」另一更電壓增益實施例之一,應用於12V 27 1238589 蓄電池昇壓至400V,輸出功率為210W時,各元件電壓及電 流波形。從開關導通週期增加,證明本創作電壓增益之公式 接近實驗結果,既使在低壓電源,昇壓比超過33倍條件下, 仍然具有本創作所欲表達之理念。各波形位置之排序同圖6 順序,對照兩圖,雖然本實施例之電流漣波較高,但仍可達 成電壓箝制效果。 圖10為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」實施例之一,應用於12V蓄電池昇壓至$ 400V,最高輸出功率為300W之轉換效率。在此測試條件下, 最高效率超過96.5%,整體效率略低於圖8,但於昇壓比超過 33倍之範圍,開關2電流^超過額定三分之二情況下,已充 分使用開關之容量,此效率仍超過大部分先前技術所列之參 考文獻。 圖11為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」實施例之一,將直流輸出電路負載固定 在100W時,直流輸入電路101之電壓由12V逐漸提昇至30V,· 輸出端昇壓至400V,測量開關電壓及電流波形。由連續實驗 可以歸納,電流漣波較低情形發生在責任週期於0.5附近,顯 示此時為激磁電流‘;一次側感應電流纟加上二次側電流/Z2之 和,前後兩項主要電流波形互補,開關2導通期間, 維持定值,以致其波形接近方波,有效降低開關之導通損。 本實施例之轉換效率如圖12所示,當輸入電壓為25V時,其 效率接近98%,此時電壓增益為16倍,然而電壓增益低於16 倍之部分(輸入電壓高於25V),轉換效率反而隨著電壓增益 28 1238589 減少而降低。另外,本實施例之極限值為輸入電壓可接受8 V, 該昇壓比為50倍,效率94.5%。由本實施例證明充分運用本 創作所分析之特性,既使昇壓比再高,效率不一定會隨之降 低,換言之,實驗結果已克服先前技術之瓶頸,可達成高昇 壓比高效率換流器之目的。 綜合上述所有實施例之實驗結果,功率半導體開關最高 電壓不會超過55V,可以進而選用更低導通阻抗之75V MOSFET。另外,圖10實驗12V-300W推論開關流經之最大電馨 流高於50A,已超過實作選用MOSFET開關FQI90N08之額定 電流71A的三分之二。因此本創作所選用開關,尚有25V餘 域之緩衝電壓,運作電流貼近額定,零件易取得,更重要是 便宜,其餘元件亦可採此原則。本創作所顯示之性能及成本, 非為使用最佳元件下完成,熟悉該領域皆能輕易完成其性 能,有利於產業界實現成品之競爭力。 圖13為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」,第二較佳實施例之方塊圖。相較於圖丨,鲁 二次側電路1301的耦合電感r之二次侧繞組&極性接線方法 相反(極性點定義在與濾波電路1〇5銜接處)。此架構之原理 為一次側電路102之功率半導體開關β導通時,二次侧電路 1301耦合電感7;之二次側繞組&之極性點電壓為正,因此濾 波電路1G5之整流二極體μ偏導通,輸出電壓(等於二次側 高壓電容。2之電壓ν。串聯耦合電感7;二次側電壓b。當開關ρ 截止時’耦合電感7;之二次側繞組電流^反向,經過箝制二 極體A與放電-極體路徑,對高壓電容q充電。此架構之 1238589 特點為責任週期β較長,以及再生被動式緩震電路103吸收與 釋放能量較少,開關2流經電流心有效值較低,但所承受之 電壓vD,較高。 [第二較佳實施例公式推導] 參考圖13所示,當開關2導通時,耦合電感C二次側繞 組z2之極性點為正電壓,串聯高壓電容c2之電壓vC2,對濾波 電路105充電,為簡化計算,耦合係數A設定為1,因此輸出 電壓匕為 彳 V〇 =^L2+VC2 (17) 高壓電容c2電壓VC2充電狀態,係在開關2截止時,由耦合電 感7;之一次側激磁電流l,透過二次側繞組12之電流l對該電 容充電,此時電壓〜等於電壓vC2,因此其值為 vC2=VINnD/(i-D) (18) 耦合電感7;二次側繞組Z2在開關0導通時,該繞組電壓v,2與高 壓電容C2電壓vC2同時串聯對濾波電路105放電,此時〜電壓 由一次側繞組4感應,其值為 < VL2=nVIN (19) 將方程式(18)與方程式(19)代入方程式(17)計算,所以第二較 佳實施例之電壓心為 gV2=v0/vin=^ (20) 由於開關2兩端所承受之箝制電壓〜,與方程式(8)相同,因 此可以整理獲得 VDS =VC\ ~^0 ^ n (21) 30 1238589 假定輸入直流電壓為28V,匝數比η為6,輸出電壓設計 為400V,代入方程式(13)及方程式(20)計算,第一較佳實施 例之責任週期D為0.44,第二較佳實施例之責任週期D為 0.58。另外,從方程式(21)計算,第二較佳實施例之開關0電 壓财壓為67V。 圖14為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」,第二較佳實施例之模擬波形響應。此 波形係採用PSPICE電路軟體模擬,為方便對照模擬之結果,0 電路元件與第一較佳實施例實作規格相同,模擬之條件比照 圖6,輸入電壓28V,400V-300W之輸出規格。依據波形顯示, 開關2兩端電壓提升至67V,但開關電流^峰值明顯降低。再 生被動式緩震電路103之放電二極體/)2,該電壓νϋ2及電流/D2 波形亦有效處理逆向恢復電流之問題。耦合電感τ; 一次側繞 組A之電流Μ,當開關2截止一段時間後,逐漸與二次側繞組 心電流L靠近,最後流經同一迴路而相等,此現象有利於開 關2導通時,電流k無法立即自一次側繞組Α汲取電流,形成春 零電流切換(ZCS),模擬中開關2導通瞬間存在少許電流, 乃箝制二極體A選取一般二極體所產生(模擬軟體未提供蕭 基二極體之零件庫),其電流為箝制二極體逆向恢復電流, 實測倘若使用蕭基二極體不會有此部分電流。經由此模擬結 果可以佐證圖13之電路,亦可嚴謹區分高壓側低電流,低壓 側南電流之功能。 圖15為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」,第三較佳實施例之方塊圖。此實施例 31 1238589 承襲圖1及圖13方塊圖之特點,意即第— 弟-再生被動式緩震電路15〇2可以選擇附加或省 側電路1_合·^之二次側繞組Ζ2 ’接線方式為極性點在 左側,南壓電容c2之電壓Vc2充電時間為開關咖期間,電 路工作模式與圖1架構相似。當—次側電路1()2之功 開關2導通時’搞合電感(二次側繞組&極性點為正電壓、,該 繞組電U聯箝制電容q與直流電壓⑼,_射、放 極體對高壓電容c2充電。當功率半導體開關ρ截止時,瑭 箝制二極體仏導引一次侧繞組A之突波電流^對箱制電容 電。待二次側繞組4之電流L轉向後,一同串聯高壓電容A 之電壓VC2、二次側繞組&之電壓、(非極性點電壓為正)、一 次側繞組A之激磁電流L所建立電壓、與直流電壓源‘四 者,經過整流二極體^,對濾波電路1〇5充電。第三較佳實 施例之方塊圖,可選擇性加入第二再生被動式緩^震電路 1502,可以均勻吸收突波電流,並同時有兩組被動式緩震電 路,以並聯再生方式加入昇壓陣容。 _ 本實施例之電壓增益公式與第一較佳實施例相同,其推 導原理相同,在此不加以贅述,其功能可經由下述模擬驗證。 圖16為本發明所揭示「利用|馬合電感雙向磁路能量傳遞 之咼昇壓比換流器」,第三較佳實施例之模擬波形響應。模 擬條件依然對照圖6條件,輸入電壓28V,輸出規格400V-300W,但不包括第二再生被動式緩震電路15〇2。依據波形 顯示,功率半導體開關2兩端箝制電壓與第一較佳實施例相 32 1238589 同為50V,電流‘並無明顯差異。第一再生被動式緩震電路 1501之放電二極體仏,其電壓、及電流“波形亦可有效處理 逆向恢復電流之問題。經由此模擬結果可以證明圖15之電路 亦可嚴謹區分南壓侧低電流,低壓側南電流之功能。 圖17為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」,第四較佳實施例之方塊圖。相較於圖15 之電路架構,二次側電路1301之耦合電感7;之二次側繞組 極性接線方法相反,該極性點選擇在濾波電路105銜接處。φ 承襲圖13方塊圖之特點,將以第一再生被動式緩震電路1501 取代圖13之再生被動式緩震電路103。當一次側電路102之功 率半導體開關0導通時,耦合電感7;二次側繞組ζ2之極性點為 正電壓,該繞組電壓νΖ2串聯高壓電容c2,經濾波電路105之 整流二極體%對濾波電容c,充電。當功率半導體開關2截止 時,箝制二極體A導引一次側繞組A之突波電流L對箝制電 容c3充電。待二次側繞組z2之電流l轉向後,一同串聯箝制 電容c3電壓vC3、二次侧繞組z2之電壓Vz2 (非極性點電壓為正;φ 與直流電壓源匕三者,再扣除一次側繞組a之激磁電流、所 建立電壓h,經過放電二極體d4,對二次側電路1301之高壓 電容c2充電。第四較佳實施例之方塊圖,可選擇加入第二再 生被動式緩震電路1502,可以均勻吸收突波電流,並同時有 兩組被動式緩震電路,以並聯再生方式加入昇壓陣容。 本架構二次側電路1301之高壓電容c2電壓vC2,幾乎完全 來自於二次側繞組l2,直流輸入電路101與一次側電路102之 電壓相互抵銷,並沒有串聯直接放電於濾波電路105之濾波 33 1238589 電容c。,因此該架構之電壓增益較低,箝制電壓較高,然而 調高責任週期維持固定輸出電壓後,可以縮小功率半導體開 關!2之有效值電流,換言之,開關損失與承受電流可以降低。 本實施例之電壓增益公式與第二較佳實施例相同,其推 導原理相同,在此不加以贅述,其功能可經由下述模擬驗證。 圖18為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」,第四較佳實施例之模擬波形響應。模 擬之條件比照圖6,輸入電壓28V,輸出電壓400V及功率$ 300W。依據波形顯示,功率半導體2開關兩端箝制電壓να提 升至67V,但電流k峰值明顯降低。第一再生被動式缓震電 路1501之放電二極體A,該電壓vD4及電流“波形已有效處理 逆向恢復電流之問題。經由此模擬結果可以證明圖17之電路 架構,亦可嚴謹區分高壓側低電流,低壓側高電流之功能。 圖19為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」,第五較佳實施例之方塊圖。本實施例 與圖1不同之處在於再生被動式緩震電路103,由串聯再生被φ 動式緩震電路1901所取代。由於再生被動式缓震電路係與濾 波電路105串聯,故稱之為串聯再生被動式缓震電路1901。 濾波電路105之濾波電容c0之負極,不與直流輸入電路101之 負極相連,改接至由串聯再生被動式緩震電路1901之箝制電 容ς正極端點。本實施例除具有第一較佳實施例之高昇壓比 高效率之功能,另外之特點在於可以降低濾波電容cD所承受 電壓。直流輸出電路106之電壓,由串聯再生被動式緩震電 路1901之箝制電容ς之電壓vcl與濾波電路105之濾波電容仏之 34 1238589 電壓串聯所組成。當開關e截止時,耦合電感τ;之一次側繞 組Α的突波電流Μ先對箝制電容q充電,待耦合電感C之二次 側繞組A的電流L轉向後,同時以電流L對箝制電容q與濾波 電容4充電。 本實施例之電壓增益公式與第一較佳實施例相同,其推 導原理相同,在此不加以贅述,其功能可經由下述模擬驗證。 圖20為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」,第五較佳實施例之模擬波形響應。綜擊 合觀察,本實施例欲表達之創作理念與第一及第三較佳實施 例相仿,同樣可達成高昇壓比高效率換流之目的。 圖21為本發明所揭示「利用耦合電感雙向磁路能量傳遞 之高昇壓比換流器」,第六較佳實施例之方塊圖。相較於圖19 之電路架構,二次側電路1301之耦合電感7;之二次側繞組 極性接線方法相反,該極性點選擇在濾、波電路105銜接處。 本實施例除具有第二較佳實施例之高昇壓比高效率功能,另 外之特點在於可以降低濾波電容所承受電壓。直流輸出電春 路106之電壓匕,由串聯再生被動式緩震電路1901之箝制電容 q之電壓vn與濾波電路105之濾波電容cQ之電壓串聯所組成, 開關0截止時,待耦合電感7;之一次側繞組L,電流l先對箝制 電容q充電,待下一次開關2導通時,耦合電感C之二次側繞 組12電路電流L,同時對箝制電容口與濾波電容G充電。 本實施例之電壓增益公式與第二較佳實施例相同,其推 導原理相同,在此不加以贅述,其功能可經由下述模擬驗證。 圖22為本發明所揭示「利用耦合電感雙向磁路能量傳遞 35 1238589 之咼昇壓比換μ态」,第六較佳實施例之模擬波形響應。本 實施例透過杈擬波形結果,欲表達之創作理念與第二及第四 較佳實施例相仿,可達成高昇壓比高效率換流之目的。 茲將上述六個較佳實施之電壓增益及開關箝制電壓之公 式彙整如下: 實施例 第一、三及五較佳實施例 第二、四及六較佳實施例 電壓增益 Gy-V〇/VIN^m 1-D Gv = V0IVin^-JL^ 1-D 開關箝制 電壓 =^〇/(n + 2) v ds = V〇 ί η 若以第一列公式設計換流器,額定輸出電壓lkv,匝數 比〃設定10,責任週期Z)為〇·8,則電壓增益為60倍,換古之, 可以將16·7ν之電壓提昇約至lkv,開關籍制約為83·、^,可 使用100V或15GV之開關,當然、整流二極體及放電 〇 向電壓低於直流輸出電壓,可選擇使用_規格,=體逆 改善習用高壓輸出時需串聯多個繞組與高壓二極體之電= 雖然本發明已前述較佳實施例揭示,铁盆並 本發明’任何熟習此技藝者,再不脫離本發明用以限定 内’當可作各種之變動與修改’因此本發明之保範園 後附之申請專利範圍所界定者為準。 固當視FIG. 9 is another embodiment of the voltage gain of the “directional boost ratio converter using bidirectional magnetic circuit energy transfer” disclosed by the present invention, which is applied to a 12V 27 1238589 battery boosted to 400V with an output power of 210W , The voltage and current waveforms of each element. The increase in the on-period of the switch proves that the formula for the voltage gain of this creation is close to the experimental results. Even under the condition of a low-voltage power supply with a boost ratio of more than 33 times, it still has the idea expressed in this creation. The order of the positions of the waveforms is the same as that of Fig. 6. In contrast to the two figures, although the current ripple is higher in this embodiment, the voltage clamping effect can still be achieved. FIG. 10 is one of the embodiments of the “high boost ratio converter using bidirectional magnetic circuit energy transfer using a coupled inductor” disclosed in the present invention, which is applied to a 12V battery boosting to $ 400V with a maximum output power of 300W. Under this test condition, the highest efficiency exceeds 96.5%, and the overall efficiency is slightly lower than that of Figure 8. However, in the case where the boost ratio exceeds 33 times and the current of Switch 2 exceeds two-thirds of the rated capacity, the capacity of the switch has been fully used. This efficiency still exceeds most of the references listed in the prior art. FIG. 11 is one of the embodiments of the “high boost ratio converter utilizing bidirectional magnetic circuit energy transfer using a coupled inductor” disclosed in the present invention. When the DC output circuit load is fixed at 100W, the voltage of the DC input circuit 101 is gradually increased from 12V to 30V, · The output terminal is boosted to 400V, and the switching voltage and current waveform are measured. It can be concluded from continuous experiments that the lower current ripple occurs near the duty cycle of 0.5, which shows that it is the exciting current '; the primary side induced current 纟 plus the secondary side current / Z2 sum, the two main current waveforms before and after Complementary, during the on-time of switch 2, the constant value is maintained so that its waveform is close to a square wave, which effectively reduces the conduction loss of the switch. The conversion efficiency of this embodiment is shown in FIG. 12. When the input voltage is 25V, the efficiency is close to 98%. At this time, the voltage gain is 16 times, but the voltage gain is less than 16 times (the input voltage is higher than 25V). Instead, the conversion efficiency decreases as the voltage gain 28 1238589 decreases. In addition, the limit value of this embodiment is that the input voltage can accept 8 V, the step-up ratio is 50 times, and the efficiency is 94.5%. This example demonstrates that by making full use of the characteristics analyzed in this creation, even if the boost ratio is higher, the efficiency may not be reduced accordingly. In other words, the experimental results have overcome the bottlenecks of the prior technology and can achieve a high boost ratio and high efficiency converter. Purpose. Based on the experimental results of all the above embodiments, the maximum voltage of the power semiconductor switch will not exceed 55V, and a 75V MOSFET with a lower on-resistance can be selected. In addition, in Figure 10, the 12V-300W inferred that the maximum current flowing through the switch is higher than 50A, which has exceeded two-thirds of the 71A rated current of the MOSFET switch FQI90N08. Therefore, the switch used in this creation still has a buffer voltage of 25V. The operating current is close to the rated, the parts are easy to obtain, and more importantly, it is cheap. The remaining components can also adopt this principle. The performance and cost shown in this creation are not completed with the best components. Familiar with the field can easily complete its performance, which is conducive to the industry to achieve the competitiveness of the finished product. FIG. 13 is a block diagram of the second preferred embodiment of the “high boost ratio converter using bidirectional magnetic circuit energy transfer using a coupled inductor” disclosed in the present invention. Compared to Figure 丨, the secondary winding & polarity wiring method of the coupling inductor r of the secondary circuit 1301 in Lu is opposite (the polarity point is defined at the junction with the filter circuit 105). The principle of this architecture is that when the power semiconductor switch β of the primary circuit 102 is turned on, the secondary circuit 1301 is coupled to the inductor 7; the polarity of the secondary winding & is positive, so the rectification diode μ of the filter circuit 1G5 μ Bias-conduction, output voltage (equal to the secondary-side high-voltage capacitor. Voltage ν of 2. Series-coupling inductor 7; secondary-side voltage b. When the switch ρ is turned off, 'coupling inductor 7'; the secondary-side winding current ^ reverses, Clamp diode A and discharge-pole body path to charge high-voltage capacitor q. 1238589 of this architecture is characterized by a longer duty cycle β, and less energy is absorbed and released by regenerative passive cushioning circuit 103, and switch 2 flows through the current core The effective value is lower, but the voltage vD it bears is higher. [The derivation of the formula of the second preferred embodiment] Referring to FIG. 13, when the switch 2 is turned on, the polarity point of the secondary winding z2 of the coupled inductor C is positive. Voltage, the voltage vC2 of the series high-voltage capacitor c2, charges the filter circuit 105. To simplify the calculation, the coupling coefficient A is set to 1, so the output voltage is 彳 V〇 = ^ L2 + VC2 (17) The state of charge of the high-voltage capacitor c2 voltage VC2 , Tied to When OFF 2 is turned off, the primary side excitation current l is charged by the coupling inductor 7; the capacitor is charged through the current l of the secondary winding 12, and the voltage at this time is equal to the voltage vC2, so its value is vC2 = VINnD / (iD) (18) Coupling inductor 7; When the secondary winding Z2 is turned on, the winding voltage v, 2 and the high-voltage capacitor C2 voltage vC2 are simultaneously discharged in series to the filter circuit 105. At this time, the voltage is induced by the primary winding 4, which The value is < VL2 = nVIN (19) Substituting equation (18) and equation (19) into equation (17), so the voltage center of the second preferred embodiment is gV2 = v0 / vin = ^ (20) The clamping voltage ~ at both ends is the same as equation (8), so VDS = VC \ ~ ^ 0 ^ n (21) 30 1238589 Assuming that the input DC voltage is 28V, the turns ratio η is 6, and the output The voltage is designed to be 400V and calculated by substituting into equations (13) and (20). The duty cycle D of the first preferred embodiment is 0.44, and the duty cycle D of the second preferred embodiment is 0.58. In addition, from equation (21) It is calculated that the voltage value of the switch 0 voltage and the second preferred embodiment is 67V. Shows "high boost ratio converter using two-way magnetic circuit energy transfer by coupled inductor", the second preferred embodiment of the simulated waveform response. This waveform is simulated using PSPICE circuit software. To facilitate comparison of the simulation results, 0 circuit components and The first preferred embodiment has the same implementation specifications. The simulation conditions are compared with the output specifications of input voltage 28V, 400V-300W according to Fig. 6. According to the waveform display, the voltage across switch 2 is increased to 67V, but the switching current ^ peak is significantly reduced. The discharge diode /) 2 of the passive damping circuit 103 is regenerated, and the voltage ν 电压 2 and the current / D2 waveforms also effectively deal with the problem of reverse recovery current. Coupling inductance τ; the current M of the primary winding A, when the switch 2 is turned off for a period of time, gradually approaches the core current L of the secondary winding, and finally flows through the same circuit to be equal. This phenomenon is conducive to the current k of the switch 2 when it is turned on Can not immediately draw current from the primary winding A to form a spring-zero current switching (ZCS). In the simulation, there is a little current when the switch 2 is turned on. It is generated by clamping the diode A and selecting a normal diode (the simulation software does not provide Xiao Jier The parts library of the polar body), its current is the reverse recovery current of the clamped diode, the actual measurement will not have this part of the current if the Schottky diode is used. The results of this simulation can support the circuit of Figure 13, and can also distinguish the functions of low current on the high side and south current on the low side. FIG. 15 is a block diagram of the third preferred embodiment of the “high boost ratio converter utilizing bidirectional magnetic circuit energy transfer using a coupled inductor” disclosed in the present invention. This embodiment 31 1238589 inherits the characteristics of the block diagrams of Fig. 1 and Fig. 13, which means that the first-regenerative passive damping circuit 1502 can choose to add or save the side circuit 1_ ^ · secondary side winding Z2 'wiring The method is that the polarity point is on the left, and the charging time of the voltage Vc2 of the south voltage capacitor c2 is the switching period. The circuit working mode is similar to the structure of FIG. 1. When the power switch 2 of the secondary circuit 1 () 2 is turned on, the inductance is engaged (the secondary winding & the polarity point is a positive voltage, the winding is electrically connected to the clamping capacitor q and the DC voltage ⑼, The pole body charges the high-voltage capacitor c2. When the power semiconductor switch ρ is turned off, the clamped diode 仏 guides the inrush current of the primary winding A to the box capacitor. After the current L of the secondary winding 4 turns, , The voltage VC2 of the high-voltage capacitor A in series, the voltage of the secondary winding & (the voltage at the non-polar point is positive), the voltage established by the exciting current L of the primary winding A, and the DC voltage source are rectified. The diode ^ charges the filter circuit 105. The block diagram of the third preferred embodiment may optionally include a second regenerative passive mitigation circuit 1502, which can evenly absorb the surge current and has two sets of passive The damping circuit is added to the boost lineup in parallel regeneration mode. _ The voltage gain formula of this embodiment is the same as that of the first preferred embodiment, and its derivation principle is the same, which will not be repeated here. Its function can be verified by the following simulation. Figure 16 is the Institute Revealed the "Using | Mahe Inductor Bidirectional Magnetic Circuit Energy Transfer 咼 Boost Ratio Converter", the third preferred embodiment of the simulated waveform response. The simulation conditions are still compared to the conditions in Figure 6, the input voltage is 28V, and the output specification is 400V-300W , But does not include the second regenerative passive damping circuit 1502. According to the waveform display, the clamping voltage across the power semiconductor switch 2 is the same as that of the first preferred embodiment 32 1238589 is 50V, and the current is not significantly different. First The discharge diode 仏 of the regenerative passive cushioning circuit 1501, its voltage and current waveform can also effectively deal with the problem of reverse recovery current. The simulation results can prove that the circuit of Figure 15 can also strictly distinguish the low current on the south side. The function of the low-side south current. Figure 17 is a block diagram of the fourth preferred embodiment of the "high boost ratio converter using bidirectional magnetic circuit energy transfer using a coupled inductor" disclosed in the present invention. Compared to the circuit architecture of Figure 15 The coupling inductance 7 of the secondary side circuit 1301; the secondary side winding polarity wiring method is reversed, and the polarity point is selected at the connection of the filter circuit 105. φ inherits the characteristics of the block diagram of FIG. 13 The first regenerative passive cushioning circuit 1501 will be used instead of the regenerative passive cushioning circuit 103 of Fig. 13. When the power semiconductor switch 0 of the primary circuit 102 is turned on, the inductance 7 is coupled; the polarity point of the secondary winding ζ2 is a positive voltage, The winding voltage νZ2 is connected in series with a high-voltage capacitor c2, and the filtering capacitor c is charged by the rectifying diode% of the filtering circuit 105. When the power semiconductor switch 2 is turned off, the clamped diode A guides the surge current L of the primary winding A Charge the clamping capacitor c3. After the current l of the secondary winding z2 turns, connect the voltage c3 of the clamping capacitor c3 and the voltage Vz2 of the secondary winding z2 together (the non-polar point voltage is positive; φ and the DC voltage source Then, the exciting current of the primary side winding a and the established voltage h are subtracted, and the high-voltage capacitor c2 of the secondary side circuit 1301 is charged through the discharge diode d4. In the block diagram of the fourth preferred embodiment, a second regenerative passive damping circuit 1502 can be optionally added, which can evenly absorb the surge current, and there are two sets of passive damping circuits simultaneously, which are added to the boost lineup in parallel regenerative mode. The voltage vC2 of the high-voltage capacitor c2 of the secondary-side circuit 1301 in this architecture is almost completely derived from the secondary-side winding l2. The voltages of the DC input circuit 101 and the primary-side circuit 102 cancel each other out, and there is no direct discharge in series to the filtering of the filtering circuit 105. 33 1238589 Capacitor c. Therefore, the voltage gain of this architecture is low and the clamping voltage is high. However, after increasing the duty cycle to maintain a fixed output voltage, the rms current of the power semiconductor switch! 2 can be reduced. In other words, the switching loss and withstand current can be reduced. The voltage gain formula of this embodiment is the same as that of the second preferred embodiment, and its derivation principle is the same, which will not be repeated here. Its function can be verified by the following simulation. FIG. 18 is an analog waveform response of the fourth preferred embodiment of the “high boost ratio converter using bidirectional magnetic circuit energy transfer using a coupled inductor” disclosed in the present invention. The simulation conditions are compared with Fig. 6, the input voltage is 28V, the output voltage is 400V and the power is $ 300W. According to the waveform display, the clamping voltage να at both ends of the power semiconductor 2 switch is increased to 67V, but the peak value of the current k is significantly reduced. The discharge diode A of the first regenerative passive damping circuit 1501, the voltage vD4 and the current "waveform have effectively dealt with the problem of reverse recovery current. The simulation results can prove the circuit structure of Fig. 17 and can also distinguish the high voltage side low. The function of current and high current on the low voltage side. Figure 19 is a block diagram of the fifth preferred embodiment of the "high boost ratio converter using bidirectional magnetic circuit energy transfer using a coupled inductor" disclosed in the present invention. This embodiment is different from FIG. 1 in that the regenerative passive vibration damping circuit 103 is replaced by a series regenerative vibration damping circuit 1901. Since the regenerative passive damping circuit is connected in series with the filter circuit 105, it is called a series regenerative passive damping circuit 1901. The negative electrode of the filter capacitor c0 of the filter circuit 105 is not connected to the negative electrode of the DC input circuit 101, but is connected to the positive terminal of the clamp capacitor 981 of the series regenerative passive damping circuit 1901. In addition to the high boost ratio and high efficiency of the first preferred embodiment, this embodiment is also characterized in that the voltage to which the filter capacitor cD is subjected can be reduced. The voltage of the DC output circuit 106 is composed of a series voltage of the clamped capacitor vcl of the regenerative passive damping circuit 1901 and a filter capacitor of the filter circuit 105. When the switch e is turned off, the coupling inductor τ; the surge current M of the primary winding A first charges the clamping capacitor q. After the current L of the secondary winding A of the coupling inductor C turns, the current L is used to clamp the capacitor at the same time. q and filter capacitor 4 are charged. The voltage gain formula of this embodiment is the same as that of the first preferred embodiment, and its derivation principle is the same, which is not repeated here, and its function can be verified by the following simulation. FIG. 20 is an analog waveform response of the fifth preferred embodiment of the “high boost ratio converter utilizing bidirectional magnetic circuit energy transfer using a coupled inductor” disclosed in the present invention. Through comprehensive observation, the creative concept to be expressed in this embodiment is similar to the first and third preferred embodiments, and the purpose of high boost ratio and high efficiency commutation can also be achieved. FIG. 21 is a block diagram of the sixth preferred embodiment of the “high boost ratio converter using bidirectional magnetic circuit energy transfer using a coupled inductor” disclosed in the present invention. Compared with the circuit structure of FIG. 19, the coupling inductance 7 of the secondary side circuit 1301; the secondary side winding has the opposite polarity wiring method, and the polarity point is selected at the connection of the filter and wave circuit 105. In addition to the high boost ratio and high efficiency function of the second preferred embodiment, this embodiment is also characterized in that the voltage to which the filter capacitor is subjected can be reduced. The voltage dagger of the DC output electric spring circuit 106 is composed of the voltage vn of the clamping capacitor q of the regenerative passive damping circuit 1901 in series and the voltage of the filter capacitor cQ of the filter circuit 105 in series. When the switch 0 is turned off, the inductor 7 is to be coupled; The primary winding L and the current l first charge the clamping capacitor q. When the switch 2 is turned on next time, the secondary winding 12 circuit current L of the coupling inductor C is charged, and the clamping capacitor port and the filter capacitor G are also charged. The voltage gain formula of this embodiment is the same as that of the second preferred embodiment, and its derivation principle is the same, which will not be repeated here. Its function can be verified by the following simulation. FIG. 22 is the simulated waveform response of the sixth preferred embodiment of “the bi-directional magnetic circuit energy transfer 35 1238589 using the coupled inductor to change the μ state” according to the present invention. In this embodiment, through the pseudo-waveform result, the creative concept to be expressed is similar to the second and fourth preferred embodiments, and the purpose of high-boosting and high-efficiency commutation can be achieved. The formulas of the voltage gains and switching clamping voltages of the six preferred implementations are summarized as follows: First, third, and fifth preferred embodiments, second, fourth, and sixth preferred embodiments, voltage gains Gy-V0 / VIN ^ m 1-D Gv = V0IVin ^ -JL ^ 1-D Switch clamping voltage = ^ 〇 / (n + 2) v ds = V〇ί η If the converter is designed with the formula in the first column, the rated output voltage lkv, The turns ratio 〃 is set to 10, and the duty cycle Z) is 0.8. The voltage gain is 60 times. In other words, the voltage of 16.7ν can be increased to about lkv, and the switch limit is 83., ^. It can be used. 100V or 15GV switch, of course, rectifier diode and discharge. Directional voltage is lower than DC output voltage. You can choose to use _ specifications, = body inverse. To improve the conventional high voltage output, multiple windings and high voltage diodes must be connected in series. Although the present invention has been disclosed in the foregoing preferred embodiments, the iron basin and the present invention "any person skilled in this art will not depart from the scope of the present invention to limit it" when various changes and modifications can be made. The ones defined in the scope of patent application shall prevail. Gudos
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW093114585A TWI238589B (en) | 2004-05-21 | 2004-05-21 | High step-up converter with coupled-inductor by way of bi-direction energy transmission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW093114585A TWI238589B (en) | 2004-05-21 | 2004-05-21 | High step-up converter with coupled-inductor by way of bi-direction energy transmission |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI238589B true TWI238589B (en) | 2005-08-21 |
| TW200539553A TW200539553A (en) | 2005-12-01 |
Family
ID=37000315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093114585A TWI238589B (en) | 2004-05-21 | 2004-05-21 | High step-up converter with coupled-inductor by way of bi-direction energy transmission |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI238589B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI383568B (en) * | 2008-11-14 | 2013-01-21 | Univ Hungkuang | High efficiency step-up power converters |
| CN103427659A (en) * | 2013-08-22 | 2013-12-04 | 深圳桑达国际电源科技有限公司 | Electrical energy conversion system, DC-DC (direct current) converter and voltage spike suppression circuit of DC-DC converter |
| CN106300974A (en) * | 2016-10-08 | 2017-01-04 | 山东大学 | A kind of modified model non-isolated high step-up ratio DC converter and control method |
| CN109713896A (en) * | 2019-01-04 | 2019-05-03 | 国网山东省电力公司淄博供电公司 | High-gain boost converter and its control method with inverse ratio square characteristic |
| CN113938003A (en) * | 2021-11-18 | 2022-01-14 | 陕西科技大学 | Bidirectional common-current DC/DC converter and method using coupling inductor |
| US20220294345A1 (en) * | 2021-03-10 | 2022-09-15 | Panasonic Intellectual Property Management Co., Ltd. | Dc-dc converter and vehicle |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI402527B (en) * | 2008-12-17 | 2013-07-21 | Univ Nat Taipei Technology | Estimation of Transformer Leakage Value |
| TWI385908B (en) * | 2009-03-13 | 2013-02-11 | Richtek Technology Corp | Single inductance multi - output power converter and its control method |
| TWI412221B (en) * | 2010-10-18 | 2013-10-11 | Univ Nat Taipei Technology | High boost ratio converter |
| TWI519051B (en) * | 2014-03-24 | 2016-01-21 | 全漢企業股份有限公司 | Power conversion apparatus and control method thereof |
| CN104734547B (en) * | 2015-03-19 | 2017-08-04 | 南京航空航天大学 | A kind of boosting unit Z-source inverter |
| TWI752840B (en) * | 2020-11-25 | 2022-01-11 | 立錡科技股份有限公司 | Resonant switching power converter and driving circuit thereof |
-
2004
- 2004-05-21 TW TW093114585A patent/TWI238589B/en not_active IP Right Cessation
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI383568B (en) * | 2008-11-14 | 2013-01-21 | Univ Hungkuang | High efficiency step-up power converters |
| CN103427659A (en) * | 2013-08-22 | 2013-12-04 | 深圳桑达国际电源科技有限公司 | Electrical energy conversion system, DC-DC (direct current) converter and voltage spike suppression circuit of DC-DC converter |
| CN106300974A (en) * | 2016-10-08 | 2017-01-04 | 山东大学 | A kind of modified model non-isolated high step-up ratio DC converter and control method |
| CN106300974B (en) * | 2016-10-08 | 2019-03-22 | 山东大学 | A kind of non-isolated high step-up ratio DC converter of modified and control method |
| CN109713896A (en) * | 2019-01-04 | 2019-05-03 | 国网山东省电力公司淄博供电公司 | High-gain boost converter and its control method with inverse ratio square characteristic |
| CN109713896B (en) * | 2019-01-04 | 2020-09-29 | 国网山东省电力公司淄博供电公司 | High-gain boost converter with inverse square characteristic and control method thereof |
| US20220294345A1 (en) * | 2021-03-10 | 2022-09-15 | Panasonic Intellectual Property Management Co., Ltd. | Dc-dc converter and vehicle |
| US11936297B2 (en) * | 2021-03-10 | 2024-03-19 | Panasonic Intellectual Property Management Co., Ltd. | DC-DC converter including first and second coils magnetically coupled such that current flows through second coil in forward direction of diode by mutual induction as current flowing through first coil from intermediate terminal to output terminal increases and vehicle |
| CN113938003A (en) * | 2021-11-18 | 2022-01-14 | 陕西科技大学 | Bidirectional common-current DC/DC converter and method using coupling inductor |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200539553A (en) | 2005-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Pahlevaninezhad et al. | A novel ZVZCS full-bridge DC/DC converter used for electric vehicles | |
| Kim et al. | An improved current-fed ZVS isolated boost converter for fuel cell applications | |
| Duan et al. | High-efficiency bidirectional DC-DC converter with coupled inductor | |
| Lin et al. | Soft-switching zeta–flyback converter with a buck–boost type of active clamp | |
| Wai et al. | High-efficiency bidirectional dc–dc converter with high-voltage gain | |
| Lin et al. | New zero-voltage switching DC–DC converter for renewable energy conversion systems | |
| He et al. | Design of 1 kW bidirectional half-bridge CLLC converter for electric vehicle charging systems | |
| Khalili et al. | Fully soft-switched non-isolated high step-down DC–DC converter with reduced voltage stress and expanding capability | |
| Kulasekaran et al. | A 500-kHz, 3.3-kW power factor correction circuit with low-loss auxiliary ZVT circuit | |
| TWI238589B (en) | High step-up converter with coupled-inductor by way of bi-direction energy transmission | |
| Mohammadi et al. | Soft-switching bidirectional buck/boost converter with a lossless passive snubber | |
| Li et al. | Application summarization of coupled inductors in DC/DC converters | |
| TWI262646B (en) | High-efficiency bidirectional converter for power sources with great voltage diversity | |
| TWI489750B (en) | High-efficiency bidirectional single-input and multi-outputs dc/dc converter | |
| Hu et al. | Secondary side cascaded winding-coupled bidirectional converter with wide ZVS range and high conversion gain | |
| TWI238590B (en) | High-efficiency DC/DC converter with high voltage gain | |
| Lai et al. | A high-efficiency on-board charger utilitzing a hybrid LLC and phase-shift DC-DC converter | |
| Tseng et al. | A novel active clamp high step-up DC-DC converter with coupled-inductor for fuel cell system | |
| Lin et al. | Analysis of the ZVS two‐switch forward converter with synchronous current doubler rectifier | |
| TW201246766A (en) | DC-DC voltage booster circuit and control method thereof | |
| Lin et al. | Analysis of an integrated flyback and zeta converter with active clamping technique | |
| Gurunathan et al. | ZVT boost converter using a ZCS auxiliary circuit | |
| Inaba et al. | High frequency PWM controlled step-up chopper type dc–dc power converters with reduced peak switch voltage stress | |
| Lin et al. | Novel interleaved ZVS converter with ripple current cancellation | |
| Choi et al. | High-performance front-end rectifier system for telecommunication power supplies |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |