TWI238453B - Substrate processing equipment - Google Patents

Abstract

The purpose of the invented substrate processing apparatus is to have the capability of depositing a film stably and efficiently on a substrate. The substrate processing apparatus is equipped with a holding member, which supports a substrate at a position so as to make it confront a heater unit, and a rotation drive unit, which rotates the holding member that holds the substrate. A processing vessel is equipped with a gas spray nozzle, which is provided on one side of the processing space, and a rectangular exhaust vent, which is extended in a width direction and is provided on the other side of the processing space. The gas spray nozzle is equipped with plural spray openings, which are arranged in a line in the width direction of the processing space, so as to generate a stable flow of gas inside the processing space for enabling gas from the spray openings to pass over the surface of the substrate in a laminar flow. Thus, a film can be stably and efficiently deposited on the surface of the substrate; and the substrate processing apparatus can be improved in productivity.

Description

1238453 Description of the invention: [Technical field to which the invention belongs] In particular, the present invention relates to a substrate processing apparatus for processing a substrate, such as a film, on a substrate. [Previous technology] In today's ultra-high-speed semiconductor devices, while the fighters are making progress in the miniaturization process, gates below 0.1 m can be said to be possible from a long distance. -Generally, with the miniaturization of the semiconductor device, the moving speed of the semiconductor device has also increased. However, in such a miniaturized semiconductor device, the miniaturization of the semiconductor device shortens the gate length, and it is necessary to make the gate electrode shorter. The film thickness of the insulating film is reduced in accordance with the principle of proportionality. However, once the gate length becomes less than 01 / zm, the thickness of the closed-pole insulating film must also be set to the same as when a thermal oxide film is currently used! To 2 nm or less, the channel current is increased in such a very thin closed-pole insulating film. As a result, the problem of an increase in gate leakage current cannot be avoided. Because of this situation, it has been proposed that thermal oxide films are more specific than permittivity. Therefore, although the actual film thickness is large for gate insulating films, Ta205 or AH Zr with small film thickness when converted to thermal oxide films 〇2, Hf〇2, and other high dielectric f materials such as H04 or Ca04. # By using such a high dielectric material, once the gate length is below, even if it is a very short super gate speed semiconductor device, a physical film thickness of about 10 Å can be used. And can control the gate leakage current caused by the channel effect. For example, a conventionally known Ding film can be formed by using the cvd method and O 2 as a gas phase raw material. The typical occasion is that the cVD process is performed at a decompression percentage of about 28%, or about 48 (rc, or above).

0 \ 87 \ 87879.DOC 1238453 into a Ta205 film, which is further heat-treated in an oxygen atmosphere. As a result, the oxygen deficiency in the film is removed, and the film itself crystallizes. The crystalline Ta20S film thus crystallized showed a large specific permittivity. From the viewpoint of improving the carrier current mobility in the channel region, an extremely thin base oxide film with a thickness of 1 nm or less, preferably 0 or less, may be interposed between the dielectric oxide film and the silicon substrate of the upper two dielectric layers. The base oxide film must be very thin. If it is thick, it will be offset by the use of a high dielectric film for the gate insulating film. On the other hand, such a very thin base oxide must cover the surface of the silicon substrate uniformly, and it must be required that defects such as interface levels are not formed. Conventionally, thin interlayer oxide films are generally formed by rapid thermal oxidation (RTO) processing of a cut substrate (for example, refer to Patent Document 1), but if a thermal oxide film with a thickness of 1 nm or less is desired, It is necessary to reduce the processing temperature when the film is formed. However, a thermal oxide film formed at such a low temperature is likely to contain defects such as interface levels, and is not suitable as a base oxide film for a high-dielectric gate oxide film. Structure diagram of a semiconductor device 10 with a dielectric gate insulating film. Referring to FIG. 1, a semiconductor device 10 is formed on a silicon substrate, and Ta205 and Ah are formed on the silicon substrate 11 via a base oxide film 12. 〇3, Zr〇2, Hf〇2, ZrSi〇4, HfSi〇4 and other high-dielectric gate oxide film 13, in addition to the aforementioned high-dielectric interlayer oxide film 13, a gate electrode 14 is formed. In the semiconductor device 10, the surface of the aforementioned base oxide film layer 12 is damaged, and the flatness of the interface between the silicon substrate 丨 and the base oxide film 丨 2 is maintained. O: \ 87 \ 87879.DOC -8-1238453 Nitrogen (N) forms the oxynitride film 12A. The bottom oxide film is formed with an oxynitride film 12 A having a larger specific electrical rate than the silicon oxide film, which can further reduce the thickness of the thermal oxide film of the base oxide film 丨 2. It will be explained first about the high-speed semiconductor device. In 10, the preferable thickness of the aforementioned base oxide film 12 is as thin as possible. — In order to form uniformly and stably below 1 nm, for example, below 0.8 nm, and further corresponding to 0.4 nm of the 2 to 3 atomic layer The thickness of the base oxide film 12 on the left and right is more difficult than in the past. In addition, in order to realize the function of the high-dielectric gate insulating film 13 formed on the base oxide film 12, the high-electricity accumulated by crystallization is heat-treated. The dielectric film 13 must be compensated for lack of oxygen, but when such a heat treatment is performed on the high dielectric film 3, the thickness of the base oxide film 12 will increase. Therefore, the gate is reduced by using the high dielectric gate insulating film 13 The actual film thickness of the polar insulating film cancels each other out. As the film thickness of the base oxide film 12 thus heat-treated increases, it implies that at the interface between the silicon substrate 11 and the base oxide film 12, oxygen atoms and silicon Atomic diffusion With the formation of this silicate transition layer, or the possibility of the base oxide film growing due to the intrusion of oxygen into the silicon substrate, the problem of increasing the film thickness due to the heat treatment of the base oxide film 12 In particular, when the thickness of the base oxide film 12 is desired to be reduced to a desired number of atomic layers or less when used as the base oxide film, it becomes a very urgent problem. Patent Document 1 JP-A-5-47687 [ SUMMARY OF THE INVENTION The present invention aims to provide a novel and useful substrate processing device O: \ 87 \ 87879.DOC -9-1238453 which solves the above-mentioned problems. A more detailed object of the present invention is to provide a substrate processing device which can be used in On the surface of the silicon substrate, a very thin oxide film with a thickness of typically 2 to 3 atomic layers is formed stably, and then it is nitrided to form an oxynitride film. In addition, a more detailed object of the present invention is to provide a cluster substrate including a aesthetic device, which can be used on the surface of a Shixi substrate. It is intended to form a non-book thin and typically 2 ~ 3 atomic layer. An oxide film with a thickness of 1%, which in turn makes it nitride in a stable manner. Further, another object of the present invention is to provide a substrate processing apparatus' that can solve the above-mentioned problems and is configured to improve the uniformity of the oxide film, improve the yield, and prevent pollution. To achieve the above object, the present invention has the following features. According to the present invention, the 'gas nozzle ejection part ejects gas from the side of the processing container toward the substrate to be processed which is held on the holding member, and the exhaust port provided on the other side of the processing unit' exhausts the gas passing through the substrate to be processed. In this way, the uniformity of the oxide film, the improvement of the yield, and the prevention of pollution can be achieved. At the same time, it can provide a stable flow rate (laminar flow) from one direction to the surface of the substrate to be processed held in the processing space. It stabilizes the film formation process of the substrate to be processed, and can be efficiently performed to improve productivity. According to the present invention, the plural-body spray ports arranged in a row in the horizontal direction can keep the air flow in the entire processing space uniform, and the film-forming treatment of the processing substrate can be efficiently performed and improved. Productive. According to the present invention, the individual supply

O: \ 87 \ 87879.DOC -10- 1238453 A plurality of gas supply lines of tritium gas can selectively and stably supply nitriding gas or oxidizing gas, for example, and can be applied to the area near the substrate to be processed in the processing space. , Stable supply of any gas. In addition, according to the present invention, since the exhaust port is formed in a wider rectangular shape than the substrate to be processed, the exhaust efficiency of the gas passing through the substrate to be processed can be improved, thereby maintaining the air flow in the entire processing space. Since the film formation of the substrate to be processed is uniform, it can also be performed efficiently to improve productivity. In addition, according to the present invention, since the exhaust port is connected from the bottom of the other side of the processing container to an exhaust path extending downward, the exhaust efficiency of the gas passing through the substrate to be processed can be improved. The airflow in the entire processing space is kept uniform, and the film formation processing of the substrate to be processed is stable and can be performed efficiently. [Embodiment] The following drawings explain embodiments of the present invention. Fig. 2 is a front view showing the structure of an embodiment of a substrate processing apparatus of the present invention. Fig. 3 is a side view showing the structure of an embodiment of the substrate processing apparatus of the present invention. FIG. 4 is a cross-sectional view taken along line A_A in FIG. 2. = As shown in Fig. 2 to Fig. 4, the substrate treatment | set 2 () is formed as described later, and can be formed by the UV light radical oxidation treatment of the Shi Xi substrate, and formed by using such an external light radical oxidation treatment. The oxide film < free radical nitriding treatment of high-frequency long-distance plasma. The main structure of the substrate processing apparatus 2G includes a processing container 22 which is internally divided into a processing space, and is inserted into the processing container 22 by heating at a specific temperature.

O: \ 87 \ 87879.DOC -11-1238453 The heating section 24 of the substrate to be processed (Shiyu substrate) inside, the ultraviolet irradiation section 26 mounted on the upper part of the processing container 22, and the long-distance plasma supply section for supplying nitrogen radicals 27. Rotary drive unit 28 for rotating the substrate to be processed, a lifting rod mechanism 30 for lifting and lowering the substrate to be processed inserted into the processing space, an exhaust path 32 for the pressure reduction processing container ^, and a supply gas (nitrogen, oxygen) Etc.) in the gas supply portion 34 inside the processing container 22. The substrate processing apparatus 20 includes a frame 36 for supporting the above-mentioned main components. The frame 36 is a three-dimensionally assembled iron frame. The bottom frame 38 is placed on the floor in the shape of a table, and the vertical frame 40 is erected in the vertical direction from the rear of the bottom frame 38. The middle portion of the vertical frame 40 The middle frame 42 extending in the horizontal direction and being horizontally erected is formed by the upper ends of the vertical frames 40 and 41 being horizontally erected in the horizontal upper frame 44. The bottom frame 38 is equipped with a cooling water supply unit 46, exhaust valves 48a and 48b including a solenoid valve, a turbo molecular pump 50, a vacuum line 51, a power supply unit 52 of the ultraviolet irradiation unit 26, and a lifting rod mechanism 30. The driving section 136, the gas supply section 34, and the like. A cable guide 40a is formed inside the vertical frame 40 through which various cables can be inserted. An exhaust duct 4u is formed inside the vertical frame 41. In addition, an emergency stop switch 60 is mounted on a bracket 58 fixed to the middle portion of the vertical frame 40, and a bracket 62 fixed to the middle portion of the vertical frame 41 is provided with temperature adjustment by cooling water.器 64。 64. Supported on the middle frame 42 are the processing container 22, the ultraviolet irradiation section 26, the remote plasma section 27, the rotation driving section 28, the lifter mechanism 30, and the UV lamp controller 57. In addition, the upper frame 44 is equipped with a gas box 66 and an ion measurement controller 68 that can communicate with O: \ 87 \ 87879.DOC -12-1238453. A plurality of gas lines 58 are pulled from the gas supply unit 34. APC controller 70 for pressure control and TMP controller 72 for controlling full-round molecular pump 50. FIG. 5 is a front view showing the configuration of a machine disposed below the processing container 22. As shown in FIG. FIG. 6 is a plan view showing the structure of a machine arranged below the processing container 22. As shown in FIG. FIG. 7 is a side view showing the structure of a machine arranged below the processing container 22. As shown in FIG. Fig. 8A is a plan view showing the structure of the exhaust path 32; Fig. 8B is a front view showing the structure of the exhaust path 32; and the figure is a longitudinal sectional view taken along the line β · β. As shown in FIGS. 5 to 7, an exhaust path 32 for exhausting the gas inside the processing container 22 is provided below the rear portion of the processing container 22. The exhaust path 32 is installed so as to communicate with a rectangular exhaust port 74 having a lateral dimension substantially the same as the horizontal I of the processing space formed inside the processing container 22. In this way, since the exhaust port 74 is extended to correspond to the width and width of the inside of the processing container 22, the gas supplied to the inside from the front 22a side of the processing container 22 will flow through the inside of the processing container 22 as described later. In the rear, the air is efficiently exhausted toward the exhaust path 32 at a constant flow rate (laminar flow). As shown in FIGS. 8A to 8C, the exhaust path 32 includes a rectangular opening portion 32a communicating with the exhaust port 74, a left and right side surfaces of the opening portion 32a, and a tapered portion 32b inclined in a tapered shape toward the lower side. The bottom 32c where the passage area is concentrated at the lower end of the shaped portion 32b, the B-shaped main exhaust pipe 32d protruding forward from the bottom 32c, the discharge port 32e opening at the lower end of the main exhaust pipe 32d, and the lower portion of the tapered portion 32b The 32f opening is called a discharge port. The exhaust port 仏 is connected to the suction port of the turbo molecular pump 50. In addition, the shunt outlet is called O: \ 87 \ 87879.DOC -13- 1238453 and is connected to the shunt line 5 1 a. As shown in FIG. 5 to FIG. 7, the “gas exhausted from the exhaust port of the processing container 22” is attracted by the turbo molecular pump 50 and flows in from the rectangular opening 32 a and passes through the tapered portion 32 b to The bottom 32c is guided to the turbo molecular pump 50 through the main exhaust pipe 3M and the discharge port 326. The turbo tube 50a of the turbomolecular pump 50 is connected to the vacuum line 5 via interstitial gas. Therefore, the gas filled in the processing container 22 is opened to the vacuum line via the turbomolecular pump 5Q when the valve 2 is opened. 51 is discharged. In addition, a shunting discharge port in the exhaust path 32 is connected to an a-flow pipe 仏, and the shunting pipe 5U is communicated with the vacuum pipe 5i due to the opening of the valve 48b. Here, the configuration of the processing container M and its peripheral devices constituting an important part of the present invention will be described. [Configuration of the processing container 22] Fig. 9 is an enlarged side view of the processing container 22 and its peripheral devices. Fig. 9 is a plan view of the inside of the processing container 22 with the lid member 82 removed from above. As shown in FIG. 9 and FIG. 10, the processing container 22 is closed by a cover member 82 to an upper opening of 80, and the inside thereof becomes a process space (processing space) 84. The processing trough 22 is formed with a gas supply port 22g in the front portion 22a, and thereafter.卩 22b is formed with a transfer port 94. The supply port 22g is provided with a gas injection nozzle section 93 described later, and the transfer port 94 is communicated with a gate valve 96 described later.

FIG. 11 is a plan view of the processing container 22. FIG. 12 is a front view of the processing container 22. FIG. 13 is a bottom view of the processing container 22. Fig. 14 is a longitudinal sectional view taken along line C-C O: \ 87 \ 87879.DOC -14-1238453 in Fig. 12. Figure 1 5 Aα port 1 is a right side view of processing valley state 22. FIG. 16 is a left side view of the processing container 22. As shown in Figs. 11 to 16, the bottom 22c of the processing container 22 is provided with an opening 73 inserted into the heating section 24, and an exhaust opening 74 having a rectangular opening as described above. The above-mentioned exhaust path 32 is communicated with the exhaust port 74. The chamber 80 and the lid member 82 are made of, for example, a cut aluminum alloy and processed into a shape as described above. In addition, on the right side 22e of the processing container 22, a second window 75, 76 for peeping the process space 84, and a sensor unit 77 for measuring the temperature of the process space 84 are mounted. In this embodiment, since the first window 75 formed in an oval shape is arranged on the left side in the center of the right side 22e, and the second window 76 is formed in a circle on the right side of the center of the right side 22e, it can be directly visually viewed from two aspects. The state of the substrate w to be processed held in the process space 84 is advantageous for observing the film formation status of the substrate W to be processed. The windows 75 and 76 are configured so that they can be removed by the processing container 22 when a temperature measuring instrument such as a thermocouple is inserted. In addition, a sensor unit 85 for measuring the pressure in the process space 84 is mounted on the left side 22d of the processing container 22. The sensor unit 85 is provided with three pressure gauges 85a to 85c having different measurement ranges, and the pressure change in the process space 84 can be measured with high precision. In addition, four corners of the inner wall of the processing container 22 forming the process space 84 are provided with a curved portion 22h formed in an R shape, which can not only avoid stress concentration by the curved portion 22h, but also can exert a gas injection nozzle portion. 93 O: \ 87 \ 87879 DOC -15-1238453 Stabilization of gas flow from jets. [Configuration of the ultraviolet irradiation section 26] As shown in Figs. 8 to 11, the ultraviolet irradiation section 26 is mounted on the cover member 82. Inside the housing 26a of the ultraviolet irradiation section 26, two ultraviolet light sources (UV lamps) 86, 87 formed in a cylindrical shape are arranged in parallel at a specific interval. The external light sources 86, 87 have a wavelength of 172 nm. The characteristic of ultraviolet rays is provided through the rectangular openings 82a, 82b formed in the lateral extension of the cover member 82, and can face the front half of the process space 84 opposite to the upper surface of the substrate w held in the process space 84 (left of FIG. 8). (Half) area where the ultraviolet rays are exposed. In addition, the intensity distribution of the ultraviolet rays irradiated by the ultraviolet light sources 86 and 87 which are linearly irradiated on the substrate W to be processed is not uniform, but varies depending on the radial position of the substrate W to be processed. The outer side of ψ decreases, and the other side decreases toward the inner side. In this way, although the ultraviolet light sources 86, 87 form a single and monotonically changing ultraviolet intensity distribution on the substrate w to be processed, the direction of change of the ultraviolet intensity distribution of the substrate w to be processed is opposite. Therefore, by controlling the UV lamp controller 57 to optimize the driving energy of the ultraviolet light sources 86, 87, a very uniform ultraviolet intensity distribution can be achieved on the substrate w to be processed. In addition, the optimum value of such driving energy is obtained by changing the driving output of the ultraviolet light sources 86, 87 and evaluating the film formation results to obtain the optimum value. In addition, the cylindrical core of the substrate W to be processed and the ultraviolet light sources 86 and 87

O: \ 87 \ 87879.DOC -16- 1238453 The center distance, for example, is set to 50 ~ 300 mm, preferably about loo ~ 200 mm. Fig. 17 is a longitudinal sectional view showing the mounting structure of the ultraviolet light sources 86 and 87 in an enlarged manner. As shown in Fig. 17, the ultraviolet light sources 86 and 87 are held at positions 2-6b with respect to the bottom opening of the housing 26a of the ultraviolet irradiation section 26. In addition, the bottom opening 26b is formed as a rectangle that is open at a position above the substrate w to be held in the process space, and has a width in a lateral direction that is larger than that of the ultraviolet light source and a longer rectangular shape. A transparent window 88 made of transparent quartz is attached to the edge portion 26c of the bottom opening 26b. The transparent window 88 transmits ultraviolet rays irradiated by the ultraviolet light sources 86, 87 into the process space 84, and has a strength capable of withstanding the pressure difference when the process space material is decompressed. In addition, a sealing surface 88a is formed on the lower edge portion of the transparent window 88 to abut a sealing member (o-ring) mounted in the groove of the edge portion 26c of the bottom opening 26b. The sealing surface 88a is formed of a coating for protecting the sealing member 89 or of black quartz. Thereby, the material of the sealing member 89 will not be decomposed, the deterioration of the protective sealing performance can be prevented, and the material of the sealing member 89 can be prevented from penetrating into the process space 84. In addition, the upper edge portion of the transparent window 88 is in contact with a protective cover 88b made of stainless steel to increase the strength of the locking member 91 when the transparent window 88 is sandwiched, and prevent the transparent window 88 from being damaged due to the pressing force during the locking. In addition, in this embodiment, the ultraviolet light sources 86, 87 and the transparent window 88 are arranged so as to flow with the gas flow sprayed by the gas spray nozzle portion 93.

O: \ 87 \ 87879.DOC -17- 1238453 extends in a vertical direction, but it is not limited to this. For example, it can be configured such that the ultraviolet light sources 86, 87 and the transparent window 88 extend in the direction of the gas flow. [Configuration of Gas Injection Nozzle Section 93] As shown in FIG. 9 and FIG. 10, the processing container 22 is provided with a gas injection nozzle section 93 for injecting nitrogen or oxygen into the process space 84 at the supply port 22g opened at the front section 22a. . The gas injection nozzle portion 93 is a row of a plurality of injection ports 93a arranged in the direction of detection of the process space 84 as will be described later. The gas ejected from the plurality of injection ports 93a can pass through the substrate to be processed in a laminar flow state. W surface, and a stable airflow is generated inside the process space 84. In addition, the distance between the lower surface of the cover member 82 and the substrate w to be processed in the closed process space 84 is set to, for example, 5 to 100 mm, and more preferably 25 to 85 mm. [Configuration of Heating Section 24] As shown in FIGS. 9 and 10, the heating section 24 is configured to include a base made of aluminum alloy, a transparent quartz bell cover 112 fixed to the base uo, and housed in a quartz clock. Sic heater 114 in the inner space 113 of the cover 112, a heat reflecting member (reflector) 116 formed of opaque quartz, and a siC substrate setting table (heating) Component) 118. Therefore, the SiC heater U4 and the heat reflecting member 116 are separated by the internal space 113 of the quartz bell cover 112, which can prevent contamination in the process space 84. In addition, in the cleaning step, it is only necessary to clean the Sic substrate setting stand 118 exposed in the process space 84, so that the operation of cleaning the Sic heater 114 and the heat reflection member 116 can be omitted.

O: \ 87 \ 87879.DOC -18-1238453 The substrate W to be processed is held by the holding member 120 above the SiC substrate setting table 118. On the other hand, the siC heater 114 is mounted on the heat reflection member 116, and the heat emitted by the SiC heater 114 is radiated to the SiC substrate setting stage 118, and the heat reflected by the heat reflection member 116 is also radiated to sic. SUB Board Setting Stage 118. In addition, the SiC heater 114 of this embodiment is heated to about 700 in a state where it is slightly separated from the SiC substrate mounting table 118. 〇. The Si IC substrate setting table 118 has good thermal conductivity, so it can efficiently transfer heat from the SiC heater 114 to the substrate w to be processed, and eliminate the temperature difference between the edge portion and the center portion of the substrate W to be processed. The substrate w to be processed is prevented from being bent due to a temperature difference. [Structure of Rotary Drive Unit 28] As shown in FIGS. 9 and 10, the rotary drive unit 28 is configured by a holding member 12 for holding a substrate W to be processed above the sic substrate setting table 118, and is fixed to A housing 122 below the base 110, a motor 128 for rotationally driving a ceramic shaft 126 coupled to a shaft 120d of the holding member 120 in an internal space 124 divided by the housing 122, and a magnet coupling 130 for transmitting the rotation of the motor 128 . In the rotation driving part 28, the shaft 120d of the holding member 120 is passed through the 112 quartz clock cover and is coupled to the ceramic shaft 126, and the ceramic shaft 126 and the rotation shaft of the transmission motor 128 are connected in a non-contact manner through the magnet coupling 1 30. The method transmits driving energy, so that the structure of the rotary driving system is simplified, and it contributes to the miniaturization of the entire device. The holding member 120 has arm portions 12 0 a to 12 0 c extending in a radial direction from the upper end of 120 d. The substrate W to be processed is mounted on the holding member O: \ 87 \ 87879.DOC -19-1238453 120 / 120a to 120c. In this way, the substrate W to be processed and the holding member 120 are rotated by the transmission motor 128 at a specific rotation speed, thereby averaging the temperature distribution generated by the 114SiC heater and irradiating the light from the ultraviolet light sources 86, 87. The intensity distribution of ultraviolet rays is uniform, and the surface can be uniformly formed into a film. [Configuration of the lifting rod mechanism 30] As shown in FIG. 9 and FIG. 10, the lifting rod mechanism 30 is provided below the chamber 80 and on the side of the 112 quartz bell cover, and the lifting arm is inserted into the chamber. 1 32. A lifting shaft 134 connected to the lifting arm 132 and a driving part 136 for lifting the lifting shaft 134 are formed. The elevating arm 132 is formed of, for example, pottery or quartz, as shown in FIG. 10, and includes a joint portion I32a that is connected to the upper end of the elevating shaft 134, and an annular portion 132b that surrounds the outer periphery of the substrate mounting platform 118. In addition, three contact pins 138a to 138c extending from the inner periphery of the ring-shaped portion 向 toward the center are provided in the lifting arm 132 at intervals of 12 () degrees in the circumferential direction. The abutting pins 138a to 138c will descend to the positions of the grooves 118a to i i8c formed by extending from the peripheral center of the sic substrate setting table 118, and then move to the top of the SlC substrate setting table ι8 by raising the lifting arm m. . In addition, the contact pins 138a to 138c are arranged so as not to interfere with the arm portions 120a to 120c of the holding member formed on the outer peripheral side of the sie substrate setting table. In addition, when the robot arm of the conveyor 98 is used to take out the substrate W to be processed, the above-mentioned contact pins 13 8a to 138c are brought into contact with the lower surface of the substrate W, and the arm is held by the holding member 12 (). The ministry picked up the substrate W to be processed, so that the robot arm of the transfer robot 98 can be moved below the substrate W to be processed, and the lifting arm 132 can be lowered to carry and hold the substrate to be processed.

O: \ 87 \ 87879.DOC 1238453 w. [Structure of Quartz Gasket 100] As shown in Fig. 9 and Fig. 10, do you cry during processing? Inside the processing Fenjie 22, a quartz washer 100 formed of, for example, a white non-reading day r # + transparent stone center is installed to shield ultraviolet rays. In addition, the quartz gasket 100 is a cylindrical box body formed by combining the lower case body 102, the side case body 104, the upper case body 106, and the Sheshuangpao stone central bell cover 112 as described later. Composition of 108. The quartz washer 100 covers the inner walls of the processing container 22 and the lid member 82 forming the process space 84, and can obtain a thermal insulation effect to prevent the thermal expansion of the processing container 22 and the lid member 82, and prevent the processing container 22 and the lid member μ. The inner wall is oxidized by ultraviolet rays and has the task of preventing metal pollution. [Configuration of the long-distance plasma unit 27] As shown in FIG. 9 and FIG. 10, the long-range plasma unit 27 that supplies nitrogen radicals to the process space is installed at the front portion 22a of the processing container 22 and passes through the supply pipe. The path 90 communicates with the supply port 92 of the processing container 22. An inert gas such as Ar and a nitrogen gas are supplied to the long-distance plasma unit 27, and the plasma is activated to form nitrogen radicals. The nitrogen radicals thus formed will flow along the surface of the substrate w to be processed to nitride the surface of the substrate. In addition, it is also possible to carry out oxidation and nitridation radical processes using 02, NO, n20, NH3 gas and the like in other nitrogen gas. [Structure of Gate Valve 96] As shown in FIGS. 9 and 10, a transfer port 94 for transferring the substrate W to be processed is provided at the rear of the processing container 22. The transfer port 94 is closed by a gate valve 96

O: \ 87 \ 87879DOC • 21-1238453, only when the substrate W to be processed is transported, the gate valve 96 is opened to open. A transfer robot 98 is provided behind the gate valve 96. In addition, in cooperation with the opening operation of the gate valve 96, the robot arm of the transfer robot 98 enters into the processing space 84 through the transfer port 舛, and performs the exchange operation of sending the processed substrate%. [Details of the above-mentioned components] (1) Here, the structure of the gas injection nozzle portion 93 will be described in detail. FIG. 18 is a longitudinal sectional view showing an enlarged configuration of the gas injection nozzle portion 93. FIG. FIG. W is a cross-sectional view showing the structure of the gas injection nozzle section 93 in an enlarged manner. Fig. 20 is an enlarged front view showing the configuration of the gas injection nozzle portion 93. As shown in FIGS. 18 to 20, the gas injection nozzle portion is located at the center of the front surface, and has a communication hole that can communicate with the supply pipe 90 of the long-distance electropolymerization portion 27 and above the communication hole 92. The nozzle plates 93 ~~% are arranged in a row in a horizontal direction. The ejection ports 93 ~~% are, for example, small holes with a diameter of 1 mm, and are arranged at intervals of 10 planes. 'Although a spray port including a small hole is provided, for example, a small slit may be used for spraying. In addition, in this embodiment, 93ai ~ 93an' is not limited to this, and the configuration of the port is not limited thereto. In addition, the nozzle plates 93bl and b3 are locked to the gas injection nozzle portion ... Γ. Since A ', the gas emitted from the nozzle 9 through the nozzle 9 will flow forward from the wall surface of the gas injection nozzle portion 93. For example, when the mouth firing port 93a 丨 ~ 93a, Yubei Fanfan μ 1δ is placed in the tube of the nozzle tube, the part of the perch which is shot from the ejection port 93a 1 ~ 93an is a part of the body Reflow to spray will occur

CH87 \ 87879.DOC -22- 1238453 is behind the official road, and gas retention occurs in the process space 84, causing the problem of unstable gas flow around the substrate W to be processed. However, in this embodiment, since the injection nozzle holes 93ai to 93an are formed on the wall surface of the gas injection nozzle portion 93, such a phenomenon that the gas returns and returns to the rear of the nozzle does not occur, and it can be maintained on a stable substrate to be processed. w The laminar flow of surrounding gas flow. Thereby, the film formation on the to-be-processed substrate W can be formed uniformly. In addition, recesses 93ci to 93C3 having a function of retaining gas are formed on the inner wall of each of the nozzle plates 931 to 93133. Since the recesses 93q to 93h are provided above the injection ports, the flow velocity of the gas injected from each of the injection ports 93ai to 93an can be averaged. As a result, the flow velocity over the entire area of the process space 84 can be averaged. In addition, each of the recesses 93 to 933 can communicate with the supply hole 93 (^ ~ 93 (13.13) which penetrates the gas injection nozzle section 93, and the central gas supply hole 93 (j2 is not formed in a staggered manner with the communication hole 92). The gas supply hole 931 in the center is supplied with the gas whose flow rate is controlled by the i-th mass controller 97a through the gas supply pipe 992. It is also arranged in The gas supply holes 93dl and 934 around the gas supply hole 931 are supplied with gas whose flow rate is controlled by the second mass controller 97b through the gas supply lines 99! And 993. In addition, the first mass controller 97a and The second quality controller 97b is connected to the gas supply unit 34 via a gas supply line 9%, and controls the flow rate of the gas supplied from the gas supply unit 34 to a preset flow rate. The first quality controller 97a and The gas supplied by the second quality controller 97b reaches the gas supply holes 93dl ~ 93d3 through the gas supply pipes 99i ~ 993, and O: \ 87 \ 87879.DOC -23-1238453 is sprayed from the injection ports 93a 丨 ~ 93an. Filling each recess 93ci ~ 93c3 in the process Space 84. / The gas in the private room 84 is so that the nozzle plate 9 extending in the widthwise direction of the front portion 22a of the processing container 22 can be blown 1 ~ the blast hole of the pocket is called ~ 93an to the entire process space 84 The area spray flows to the rear portion 22b side of the processing container 22 at a specific flow rate (laminar flow) in the entire area of the process space 84. Outside, on the rear portion 22b side of the processing container 22, the branch extending to the rear portion 22b extends in a wide direction. The rectangular port 1 has an opening 74, and the gas in the process space 84 becomes backward, and exhausts toward the exhaust path according to a specific flow rate (laminar flow). In addition, in this embodiment, the flow of the two systems can be controlled Therefore, for example, the first mass converter 97a and the second mass controller 97b can be used to control different flow rates. Thus, by setting the flow rate (flow rate) of the gas supplied to the process space 84 to be different, the flow rate in the process space 84 can also be adjusted. The gas concentration distribution changes. In addition, the first Bailey controller 97a and the second mass controller 97b can be supplied with different types of gases. For example, the first mass controller 97a can be used to control the flow of nitrogen gas, and the second mass The controller 97b controls the flow rate of the oxygen gas. The gas used may be, for example, an oxygen-containing gas, a nitrogen-containing gas, or a rare gas. (2) Here, the structure of the heating section will be described in detail. A longitudinal sectional view of 24. FIG. 22 is a bottom view showing the heating section 24 in an enlarged manner. As shown in FIG. 22 and FIG. 22, the heating section 24 is mounted on a chain alloy base. 140 fixed to the bottom of the processing container 22

O: \ 87 \ 87879.DOC -24-1238453 22c. A heater 114 and a heat reflecting member 116 are housed in an inner space 113 of the quartz bell cover 112. Therefore, the SlC heater 114 and the heat reflecting member 116 are isolated from the process space 84 of the processing container 22, and are not in contact with the gas in the process space 84, and have a structure that does not cause pollution. The sic substrate setting table 118 is placed on the stone bell cover 112 opposite to the Sic heater 114, and the temperature can be measured by a pyrometer 119. The pyrometer 119 measures the temperature of the SiC substrate setting table 118 by the thermoelectric effect generated as the SlC substrate setting table 118 is heated, and in the control circuit, the temperature signal detected by the pyrometer 119 is used to The temperature of the substrate w to be processed is estimated, and the amount of heat generated by the Sic heater 114 is controlled based on the estimated temperature. In addition, when the internal space π 3 of the quartz bell cover 112 is decompressed in the process space 84 of the processing container 22 as described later, the decompression system operates and decompresses simultaneously to reduce the pressure difference with the process space 84. Therefore, the quartz bell cover 112 does not need to take into account the decrease in the pressure difference of C γ and increase the thickness of the shell (for example, about 3), and the heat capacity is small, and thus the reactivity during heating can be improved. The base U0 is formed in a disc shape, and has a central hole 142 in the center through which the shaft 120d of the holding member 120 is inserted, and a first water passage 144 for cooling water formed in the circumferential direction is provided inside. The base 11 is made of aluminum alloy, and although its thermal expansion coefficient is large, it can be cooled by flowing cooling water through the first water passage 144. In addition, the flange 140 is a combination of a first flange 146 between the base 11 and the bottom 22c of the processing container 22, and a second flange 148 fitted on the inner periphery of the first flange. On the inner peripheral surface of the first flange 146, a second water path 15o for cooling water formed by extending in the circumferential direction is provided.

O: \ 87 \ 87879.DOC -25- 1238453 The cooling water supplied by the cooling water supply unit 46 flows through the water channels 144 and 150 to cool the base 11 heated by the Sic heater 114 and the convex The edge 140 'prevents thermal expansion of the base 110 and the flange 14o. In addition, a first inlet 154 communicating with a first inflow pipe 152 for cooling water to flow into the water passage 144 and a first outlet 156 communicating with the cooling water outflow through the water passage 144 are provided below the base 110. Outlet 158. In addition, a plurality of mounting holes 162 (for example, about 8 to 12 locations) are provided in the circumferential direction near the outer periphery of the lower surface of the base 110 for inserting and locking the bolt 160 of the first flange 146. In addition, a temperature sensor 164 including a thermocouple for measuring the temperature of the SiC heater 114 is provided near a middle position in the radial direction below the base 110, and a terminal for connecting a power cable to the power supply to the SiC heater 114 is provided. 166a ~ 166f. In addition, three areas are formed in the SiC heater 114, and the power supply cable connection terminals 166a to 166f are respectively provided with a + side terminal and a side terminal for supplying power to each area. In addition, a second inflow port 170 communicating with a second inflow pipe 168 for cooling water to flow into the waterway 150 and a second outflow pipe 172 communicating with the cooling water discharged through the waterway 150 are provided below the flange 140. 2flow outlet 174. Fig. 23 is a longitudinal sectional view showing the mounting structure of the second inflow port 170 and the second outflow port 174 in an enlarged manner. Fig. 24 is a longitudinal sectional view showing the mounting structure of the flange 140 in an enlarged manner. As shown in FIG. 23, the first flange 146 is provided with an L-shaped communication hole 146a that can communicate with the second inlet 170. An edge portion of the communication hole 146a is connected to the water path 150. In addition, the second outflow port 174 is also connected to the water passage 150 with the same structure as the second inflow port 170 O: \ 87 \ 87879.DOC -26-1238453. Since the waterway 150 is formed in the circumferential direction extending inside the flange 140, the cooling of the flange 140 also indirectly cools the quartz bell cover 112 held between the stepped portion 146b of the first flange 146 and the base 110. Protrusion η. Temperature. Thereby, the protruding portion 112 & of the quartz bell cover 112 can suppress thermal expansion in the radial direction. ... As shown in Figs. 23 and 24, a plurality of position determining holes 78 are provided below the protruding portion 112 & of the quartz bell cover 112 at a predetermined interval in the circumferential direction. This position determining hole 178 is a hole for the bolt 176 which is screwed into the base 11, but the base 110 with a large thermal expansion coefficient does not increase the load of the protrusion 4 112a when thermally expanding in the radial direction, so it is formed as a bolt 1 The larger the diameter, the larger the diameter. That is, only the gap between the pin 176 and the position determining hole 178 is allowed to thermally expand to the base 110 of the protruding portion 112a of the quartz bell cover 112. In addition, because of the protruding portion H2a of the quartz bell cover 112, right! The stepped portion 146b of the flange 146 is provided with a gap in the radial direction. Therefore, the point can only allow the thermal expansion of the base 110 due to the gap. The underside of the protruding portion U2a of the quartz bell cover 112 is sealed by a sealing member (0 ring) 180 mounted on the base 110, and the upper portion of the protruding portion 112a of the quartz bell cover 112 is mounted on the first flange 146. The sealing member (〇ring) 182 is sealed. The upper surfaces of the first flange 146 and the second flange 148 are sealed by a sealing member (o-ring) 1,84,186 attached to the bottom 22c of the processing container 22. The lower surface of the second flange 148 is sealed by a sealing member (o-ring) 188 mounted on the upper surface of the base 11o. O: \ 87 \ 87879.DOC -27- 1238453 This is due to the double sealing structure between the base Π0 and the flange 140 and between the flange 140 and the bottom 22 (:) of the processing container 22, whichever is the sealing member. If it is damaged, it can be sealed by other sealing members, so it can improve the reliability of the sealing structure between the processing container 22 and the heating portion 24. For example, when the quartz bell cover 112 is broken or the protrusion 112a is cracked, it can be placed in the A sealing member 18 outside the protruding portion 12a ensures the airtightness of the inside of the quartz bell cover 112 and prevents the gas in the processing container 22 from flowing to the outside. Or, even if the sealing members 180, 182 are close to the heating portion 24, At the time of deterioration, the outer sealing members 186 and 188 can be installed further away from the heating section 24 to maintain the sealing performance between the processing container 22 and the base 110, thereby preventing the long-term changes. Gas leakage. As shown in FIG. 21, the SiC heater 114 is placed on the heat reflecting member 116 in the internal space of the quartz bell cover 112, and by a plurality of clamp mechanisms 190 standing on the base 110, The clamp mechanism 190 has an outer cylinder 190a abutting on the lower surface of the heat reflecting member 116, a shaft 190b penetrating the outer cylinder i90a and abutting on the upper surface of the Sic heater 114, and The coil spring 192 of the outer cylinder 190a is pressed against the shaft 190b. Moreover, since the structure of the clamp mechanism 190 is configured to sandwich the SiC heater 114 and the heat reflection member 16 with the spring force of the coil spring 192, for example, even during transportation, With some vibration, the SiC heater 114 and the heat reflecting member 116 can also keep from contacting the quartz bell cover 112. In addition, since the spring force of the coil spring 192 is constantly maintained, it can also be prevented from being caused by thermal expansion. The screws are loosened, and the SiC heater 114 and the heat reflecting member Π6 can be kept in a stable state of O: \ 87 \ 87879.DOC -28- 1238453. In addition, each clamp mechanism 190 is configured to adjust the base 110 The height positions of the SiC heater 114 and the heat reflection member 116 are at arbitrary positions. By adjusting the height positions of the plurality of clamp mechanisms 190, the level of the SiC heater 114 and the heat reflection member 116 can be maintained. In addition, the quartz bell cover 112 Inside Each of the terminals 113 is provided with connection members 194 a to 194f for connecting the terminals of the SiC heater 114 to the power gauge wire connection terminals 166a to 166f that are inserted in the base 110 (however, as shown in FIG. 21) Connecting members 194a, 194c). Fig. 25 is a longitudinal sectional view of the mounting structure of the upper end of the enlarged display device 190, as shown in Fig. 25. As shown in Fig. 25, the clamp mechanism 190 is locked and inserted into the heat-inserting mechanism. The nut 193 on the upper end of the shaft 190b of the reflection member 116 through the insertion hole 116a and the SiC heater 114 through the insertion hole U4e presses the L-shaped cymbals 197, 199 in the axial direction through the gasket 195 and holds the SiC heater 114.

In the SiC heater 114, cylindrical portions 197a and 199a of L-shaped gaskets 197 and 199 are inserted into the insertion holes 114e, and shafts 190b of the clamp mechanism 190 are inserted into the cylindrical portions 197a and 199a. The protruding portions 197b and 199b of the L-shaped cymbals 197 and 199 are in contact with the upper and lower surfaces of the SiC heater 114. The shaft 190b of the clamp mechanism 190 is applied with a downward force by the spring force of the coil spring 192, and the outer mechanism 19o of the clamp mechanism 19o is clamped by the spring force of the coil spring 192. Give upward force. In this way, the spring force of the coil spring 192 is generated as a clamping force, so the heat reflecting member 116 and the SiC heater 114 are stably held, which can prevent vibration due to transportation. O: \ 87 \ 87879.DOC- 29-1238453 damage caused by movement.

The insertion hole 114e of the SiC heater 114 is larger in diameter than the cylindrical portions 197c and 197d of the L-shaped cymbals 19? A 197b, so a gap is provided. Therefore, when the insertion hole 丨 丨 the clock and the shaft 190b are relatively displaced due to the thermal expansion caused by the heat generated by the SiC heater 114, the insertion hole U4e can abut the [protrusion i97b of the zigzag cymbals 197, 199] In the state of 199b, it is displaced in the horizontal direction to prevent the occurrence of stress due to thermal expansion. (3) Here, the SiC heater 114 will be described. As shown in FIG. 26, the SiC heater 114 is composed of a first heat generating portion 114a having a circular center portion and a second and third heat generating portions having an arc shape surrounding the outer periphery of the first heat generating portion 114a. 114b, 114c. Further, a center of the sic heater 114 is provided with a through hole 114d through which the shaft 12o of the holding member 12o is inserted. The heat generating sections 114a to 114c are connected in parallel to the heat generating control circuit 196, and then controlled by the temperature adjuster 198 to an arbitrary set temperature. In the heat generation control circuit 196, the amount of heat emitted from the SiC heater 114 is controlled by controlling the voltage supplied from the power source 200 to the heat generation sections 1143 to 114 (:). In addition, if the heat generation sections 114a to 114c Different capacity will increase the load of the power supply 200, so in this embodiment, the resistance (2 KW) of each heating unit U4a ~ 114c can be set to the same resistance. The heating control circuit 196 is optional: control method I At the same time, the heating parts 114a to 114c are energized and generate heat; the control method ^ matches the temperature distribution of the substrate w to be processed, so that the first heating part 14a in the center, or the second and third heating parts U4b, 114c of the outer side One of them generates heat; the control method is to match O: \ 87 \ 87879.DOC -30-1238453 to the temperature change of the substrate W to be processed, while heating the heating portions U4a to 114c, and heating the first heating portion 114a or the second and second portions. Any one of the third heat generating sections 114b and 114c. When the substrate W to be processed is heated by the heat generating sections 1a to 114c while rotating while being held by the holding member 120, the substrate W may be heated by the outer periphery. The temperature difference between the side and the center makes the periphery However, in this example, since the SiC heater 114 heats the substrate w to be processed through the substrate with a good thermal conductivity, the substrate ° is set at 11 °, so the entire substrate w is processed from SiC. The heating by the heater 114 can minimize the temperature difference between the peripheral portion and the central portion of the substrate w to be processed to prevent warping of the substrate W to be processed. (4) Here, the U2 quartz clock will be described in detail The structure of the cover. Fig. 27A is a top view showing the structure of the quartz bell cover 112. Fig. 27b is a longitudinal sectional view showing the structure of the quartz bell cover 112. Fig. 28A is a perspective view of the structure of the quartz bell cover 112 seen from above; Fig. 28B is a view from below A perspective view of the structure of the quartz bell cover 112. As shown in FIGS. 27A, 27B, 28A, and 28B, the quartz bell cover 112 is formed of transparent quartz, and has a cylindrical portion 112b formed above the protruding portion 112 & The top plate U2c above the cylindrical portion 112b, the hollow portion U2d extending below the center of the top plate 112c, and the beam portion 1i2e which is laterally stretched over the opening formed by the protruding portion 112a. Because the protruding portion U2a It bears the load with the top plate 112e, so it is thicker than the cylindrical portion 112b. In addition, the quartz bell cover 112 extends in the longitudinal hollow portion 112d and the beam portion U2e in the horizontal direction. O: \ 87 \ 87879.DOC -31-1238453 Downward and radial strength. In addition, the middle part of the beam part 112e can be combined with the lower end of the hollow part U2d, and the through hole 112f in the hollow part 112d is also Through the beam portion 112e. The shaft 120d of the holding member 120 can be inserted into the insertion hole 112f. Further, the aforementioned Sic heater and the heat reflecting member 116 are inserted into the inner space 113 of the quartz bell cover 112. Further, although the SiC heater U4 and the heat reflecting member Π6 are formed in a disc shape, they are divided into arcs, and can be assembled after being inserted into the inner space 113 without the beam portion 112e. In addition, 'the top plate 112c of the quartz bell cover 112 is protruded at three places (120-degree intervals)', it is a hub U2g to U2i which supports the SiC substrate setting stand 118. Therefore, the Sic substrate setting stand 118 supported by the wheels i12g to 112im is placed in a state protruding from the top plate Π 2c. Therefore, even if the internal pressure of the processing container 22 is changed, or the Sic substrate setting table 118 is changed downward due to a temperature change, contact with the top plate 2c can be prevented. In addition, the internal pressure of the quartz bell cover 112 is to control the exhaust flow rate by a pressure reduction system as described later, so that the pressure difference from the process space 84 of the processing container 22 becomes 50 Torr or less. The thickness is made relatively thin. Therefore, since the thickness of the top plate 112 (: can be made as thin as about 6 to 10 mm, the thermal capacity of the quartz bell cover 112 can be reduced and the reactivity can be improved by increasing the heat conduction efficiency of the heating element. In addition, this embodiment The quartz bell cover Π2 is designed to have a strength that can withstand 100 Torr pressure. Figure 29 is a system diagram showing the structure of the exhaust system of the pressure reduction system. As shown in Figure 29, the process space of the processing container 22 As described above, after the valve 48a is opened, it is connected to the exhaust port 32 through the exhaust path 32.

O: \ 87 \ 87879.DOC -32-1238453 The attraction of turbo molecular pump 50 reduces pressure. In addition, the vacuum line 5 丨 connected to the exhaust port of the turbo molecular pump 50 is connected to a pump (MBP) 201 that sucks exhaust gas. The internal space 11 3 of the quartz 4 cover 112 is connected to the branch line 51 a through the exhaust line 202, and the internal space 1 24 divided by the housing 122 of the rotary driving section 28 is connected to the exhaust line The 204 is connected to the branch line 51a. The exhaust line 202 is provided with a pressure gauge 205 that measures the pressure in the internal space 1 and 3, and a valve 206 that opens when the internal space U3 of the quartz bell cover 112 is decompressed. Further, the branch line 5 ia is provided with the branch line 208 having the valve 48b and the branch valve 48b as described above. The branch pipe 20 is provided with a valve 21 and a variable diaphragm 211 which can be opened in the initial stage of the pressure reducing step, and can be more concentrated than the valve 48b. In addition, on the exhaust side of the turbo molecular pump 50, a valve 212 for opening and closing and a pressure gauge 214 for measuring the pressure on the exhaust side are provided. In addition, a turbine line 21 6 that communicates with the N2 line for turbine shaft cleaning to the turbo molecular pump 50 is provided with a check valve 218, a diaphragm 220, and a valve 222. In addition, the above-mentioned valves 206, 210, 212, and 222 include solenoid valves and are opened in accordance with a control signal from a control circuit. In the decompression system configured as described above, when the decompression steps of the processing container 22, the quartz bismuth cover 112, and the rotary driving unit 28 are performed, the pressure is not decompressed at one go, but gradually decompressed to gradually reduce the pressure. Close to vacuum and decompress. First, the valve 206 ′ provided in the exhaust pipe 200 of the quartz bell cover 112 is opened, so that the internal space 113 and the process space 84 of the quartz bell cover 112 are discharged through O: \ 87 \ 87879.DOC -33-1238453. The air path 32 is in a connected state, and the pressure is uniformized. Thereby, the pressure difference between the internal space 11 3 and the process space 84 of the quartz bell cover 12 at the beginning of the decompression step is made small. Secondly, the valve 210 provided in the branch line 208 is opened, and the concentrated small-flow decompression is performed by the separable diaphragm 2 11. After that, the valve 48b provided in the diverting official path 5 1 a is opened, and the exhaust flow rate is increased stepwise. In addition, 'compare the pressure of the quartz bell cover 112 measured by the pressure gauge 205 with the pressure of the process space 8 4 measured by the pressure gauges 8 5 a to 8 5 c of the inductive state unit 8 5 when the pressure difference is 50 Torr In the following case, the valve 48b is opened. By this, in the decompression step, the pressure difference acting on the inside and outside of the quartz bell cover n2 is relaxed, and unnecessary stress is not applied to the quartz bell cover 112 to perform the decompression step. In addition, the valve 48a is opened after a certain time has elapsed, and the exhaust gas flow rate caused by the attraction of the turbo molecular pump 50 is increased. The inside of the pressure reduction processing container 22, the quartz bell cover 112, and the rotation driving portion 28 is reduced to a vacuum. until. (5) Here, the structure of the said holding member 120 is demonstrated. Fig. 30A is a plan view showing the structure of the holding member 120; Fig. 30B is a side view showing the structure of the holding member 120. As shown in FIGS. 30A and 30B, the holding member 120 is composed of arm portions 120a to 120c supporting the substrate W to be processed, and an axis i20d that can be combined with the arm portions 120a to 120c. The arm portions 120a to 120c are formed of transparent quartz to prevent contamination in the process space 84 and not to shield the heat from the SiC substrate setting table 118. The upper end of the axis 120d is used as the center axis at a horizontal interval of 120 degrees. The direction extends radially. OA87 \ 87879.DOC -34-1238453 In addition, at the middle position in the longitudinal direction of the arm portions 120a to i2oc, the hubs 120e to i20g abutting on the substrate W to be processed protrude. Therefore, the substrate W to be processed is supported by the abutting hub 12 (^ ~ 12〇§ 3 points). Thus, since the holding member 120 is configured to support the substrate to be processed with point contact, the stage 118 is provided for the SiC substrate. It is possible to maintain the separated position of the substrate w to be processed only by a small distance. In addition, the separation distance between the Sic substrate setting table 118 and the substrate to be processed w is, for example, 丨 ~ Shan mm, preferably about 3 to 10 mm. 'The substrate W to be processed has a vicious rotation floating above the Sic substrate setting table 118. Compared with those directly placed on the Sic substrate setting table 118, the heat from the SiC substrate setting table 118 can be more uniformly radiated, and it is not easy to generate. The temperature difference between the peripheral wound and the central part can also prevent the substrate W from being bent due to the temperature difference. Since the substrate W to be processed is maintained at a position separated from the SiC substrate setting table U8, Warping occurs due to the temperature difference, and it will not contact the sic substrate setting table 118, and it can be restored to the original horizontal state as the temperature is uniform at a constant time. In addition, the axis i2od of the holding member 120 is made of opaque quartz. Formed into rods, It is inserted into the above-mentioned SiC substrate setting table 118 and the quartz bell cover 112f and extends below. In this way, although the holding member 120 holds the substrate W to be processed within the process space 84, it is formed of quartz. Therefore, there is no need to worry about contamination caused by metal products. (6) Here, the structure of the above-mentioned rotary driving section 28 will be described in detail. FIG. 31 shows the structure of the rotary driving section 28 arranged below the heating section 24. Vertical sectional view. Figure 32 is an enlarged longitudinal sectional view of the rotary drive section 28. O: \ 87 \ 87879.DOC -35- 1238453 As shown in Figure 31 and Figure 32, it is useful to lock under the base 110 of the heating section 24 A bracket 230 supporting the rotation driving portion 28. A rotation position detecting mechanism 232 and a bracket cooling mechanism 234 are provided on the bracket 230. In addition, a holding member 12 is inserted and fixed below the bracket 230. The ceramic shaft 126 of the shaft 120d can be fixed by a bolt 240 to hold the housing 122 on the fixed side of the ceramic bearings 236, 237 that rotatably support the ceramic shaft 126. Inside the housing 122, the ceramic shaft is used for the rotating part. 126 and ceramic bearings 236, 237 Therefore, the metal can be prevented from being contaminated. The peripheral device 122 includes a flange 242 with bolts 240 interposed therebetween and a bottomed cylindrical partition wall 244 extending below the flange 238. It is provided on the peripheral surface of the partition wall 2 There is an exhaust hole 246 which can communicate with the exhaust line 204 of the aforementioned decompression system, and the gas in the internal space 124 of the casing 122 is decompressed by being exhausted in the decompression step of the aforementioned decompression system. Therefore, the gas in the process space 84 can be prevented from flowing to the outside along the axis 12 0 d of the holding member 12 0. Further, a driven side magnet 248 of the magnet coupling 13 is housed in the internal space 124. The driven-side magnet 248 is covered with a magnet cover 250 fitted on the outer periphery of the ceramic shaft 126 to prevent contamination, and is mounted so as not to contact the gas in the internal space 124. The magnet cover 250 is a ring-shaped cover formed of an aluminum alloy, and a ring-shaped space for valley harvesting is formed inside. Contained in a state that will not shake. In addition, the joint portion of the magnet cover 250 is welded with an electron beam to form a gap-free connection, and it does not flow out of silver like soldering to cause contamination. In addition, on the outer periphery of the housing 122, a cylindrical-shaped surrounding-side rotating portion 252 is fitted and fitted, and is rotatably supported by bearings 254, 255. In addition, O: \ 87 \ 87879 DOC -36-1238453 is provided on the inner periphery of the atmosphere-side rotating portion 252 with the driving-side magnet 2 5 6 of the magnet coupling 130. The lower end portion 252a of the atmosphere-side rotating portion 252 is connected to the drive shaft 12 8a of the motor 12 8 via the transmission member 257. Therefore, the rotational driving energy of the motor 128 is transmitted to the ceramic shaft 126 through the magnetic force between the driving-side magnet 256 provided in the atmosphere-side rotating portion 252 and the driven-side magnet 248 provided inside the housing 122. It is transmitted to the holding member 120 and the substrate W to be processed. Further, a rotation detection unit 258 for detecting the rotation of the atmosphere-side rotating portion 252 is mounted outside the atmosphere-side rotating portion 252. The rotation detection unit 258 is a disc-shaped slit plate 260, 261 mounted on the outer periphery of the lower end portion of the atmosphere-side rotation portion 252, and a photo interrupter 262 that optically detects the rotation amount of the slit plate 260, 261. , 263. The photointerrupters 262 and 263 are fixed to the housing 122 by the bearing frame 264. Furthermore, in the rotation detection early element 258, since a pair of optical interrupters 262, 263 can simultaneously detect pulses matching the rotation speed, the accuracy of rotation detection can be improved by comparing the two pulses. FIG. 3 A is a cross-sectional view showing the structure of the bracket cooling mechanism 2 3 4, and FIG. 3 3 b is a side view showing the structure of the bracket cooling mechanism 234. As shown in Figs. 33A and 33B, the bracket cooling mechanism 234 is formed inside the bracket 23o with a water channel 23a for cooling water extending in the circumferential direction. A cooling water supply hole 23b is communicated with one end of the water path 230a, and a cooling water supply discharge hole 23c is communicated with the other end of the water path 230a. The cooling water supplied from the cooling water supply unit 46 passes through the water passage 230a from the cooling water supply hole 230b, and is discharged from the cooling water supply discharge hole 23 at O: \ 87 \ 87879.DOC -37- 1238453, so it can be discharged. The entire cooling bracket 230. FIG. 34 is a cross-sectional view showing the configuration of the rotation position detecting mechanism 232. As shown in FIG. 34, a light emitting element 266 is mounted on one side of the bracket 230, and a light receiving element 268 that receives light from the light emitting element 266 is mounted on the other side of the bracket 230. In the center of the bracket 230, a central hole 230d through which the shaft 120d of the holding member 120 can be inserted is penetrated in the up-down direction, and through-holes 230e, 230f are formed in the central hole 230d to cross in the transverse direction. The light emitting element 266 is inserted into the edge portion of the one through hole 230e, and the light receiving element 268 is inserted into the edge portion of the other through hole 230f. Since the shaft 120d is interposed between the through holes 230e and 23Of, the rotation position of the shaft 120d can be detected from the output change of the light receiving element 268. (7) Here, the configuration and function of the rotational position detection mechanism 232 will be described in detail. FIG. 35A is a diagram showing a non-detection state of the rotation position detection mechanism 232, and FIG. 35B is a diagram showing a detection state of the rotation position detection mechanism 232. As shown in FIG. 35A, the shaft 120d of the holding member 120 is chamfered in the tangential direction on the outer periphery. When the intermediate position between the light-emitting element 266 and the light-receiving element 268 is rotated, the chamfered portion 120i is parallel to the light emitted from the light-emitting element 266. At this time, the light from the light-emitting element 266 is irradiated to the light-receiving element 268 through the side of the chamfered portion 120i. Thereby, the output signal S of the light receiving element 268 is turned ON and transmitted to the rotation position determination circuit 270. As shown in FIG. 35B, when the axis 120d of the holding member 120 rotates and the position of the chamfering process O: \ 87 \ 87879.DOC -38-1238453 part 1201 deviates from the middle position, the light from the light emitting element will be subjected to the axis It is shielded by 120d, so that the output signal s of the rotation position determination circuit 270 becomes OFF. Fig. 36A is a waveform diagram showing the output signal s of the light receiving element of the rotation position detecting mechanism 232, and Fig. 36B is a waveform diagram of the pulse signal p output from the rotation position determination circuit 27o. As shown in FIG. 36A, the light-receiving element 268 rotates on the axis I20d, so that the light-receiving amount (output signal s) of the light from the light-emitting element 266 changes radially. The rotational position determination circuit 270 sets a threshold value 对该 for the output signal s, and outputs a pulse p when the output signal s becomes equal to or greater than the threshold value η. The pulse P is turned out as a detection signal for detecting the rotation position of the holding member 120. That is, as shown in FIG. 10, the rotation position determining circuit 27 determines that the arms 120a to 120c of the holding member 120 will not interfere with the contact pins 13 8a to 13 8c of the lifting arm 132, and does not interfere with the transfer robot. Position of the robotic arm 98, and outputs the detection signal (pulse P). (8) Here, based on the detection signal (pulse P) output from the rotation position determination circuit 270, the rotation position control processing of the control circuit will be described. Fig. 37 is a flowchart for explaining the rotational position control process performed by the control circuit. As shown in FIG. 37, the control circuit is in S11. When there is a control signal instructing the substrate to be processed ..., it proceeds to S12 to start the motor 128. Next, the process proceeds to S13 to check whether the signal of the light receiving element 268 is on. When the signal of the light receiving element 268 is ON, the process proceeds to S14, and the periodicity of the self-detection signal (pulse O: \ 87 \ 87879.DOC -39-1238453 Street) is different from the holding member 12o and the substrate w to be processed. The number of rotations. Next, the process proceeds to S15, and it is confirmed whether the number of rotations 4 of the holding member 12 and the substrate 1 to be processed is a target number of rotations set in advance. Yu still, when the rotation number η of the protection member 120 and the substrate W to be processed reaches the target rotation number na 则, return to the above S13, and confirm again whether the rotation number of the motor 128 has increased by 0. In addition, in the above S15, when, Since the number of rotations n of the holding member 12 and the substrate W reaches the target number of rotations, the process proceeds to ⑴ to check whether there is a control signal for the motor to stop. In sn, when there is no control signal for motor stop, it will return to the above 313, and when there is a control signal for motor stop, it will advance to Sichuan to stop the motor. Next, it is checked at si9 whether the signal of the light receiving element 268 is ON, and it is repeated until the signal of the light receiving element ⑽ becomes ON. " In this way, the arm portions 120a to 120c of the holding member 120 will not interfere with the abutment pins 138a to 138e of the lifting arm 132, and can be stopped at a position where the robot arm 98 does not interfere. In addition, in the above-mentioned rotary position control section Wang Lizhong, although the method of using the period of the output signal from the light receiving element 268 to determine the number of rotations has been described, for example, the numbers input by the aforementioned optical interrupters 262, 263 may be accumulated. Find the number of rotations. ° 122 side (9) Here, the structure of the windows 75 and 76 of the processing container will be described in detail. Fig. 38 is a cross-sectional view of the installation position of the cross section 76 of the enlarged display window 75 as seen from the top of the windows 75 and 39. Figure 40 is an enlarged view. Figure window 76 O: \ 87 \ 87879.DOC -40 · 1238453 cross section. As shown in Fig. 38 and Fig. 39, the first window 75 is a process space 84 formed by a gas that can be supplied to the processing container F. Since it is decompressed to a vacuum, it has a more airtight structure. ~ Solid mouth 75 is a heavy structure with transparent quartz 272 and a glass 274 that shields UV rays. The transparent quartz 272 is in contact with the window mounting portion 276, and the first window frame 278 is fixed to the window mounting portion 276 by a small screw 277. A sealing member (o-ring) 280 that air-tightly seals between the window mounting portion 276 and the transparent center 272 is installed. In addition, the second window frame 282 is fastened by a small screw 284 on the outer surface of the first window frame 278 while the UV glass 274 is in contact with the second window frame 278. In this way, the window 75 can shield the ultraviolet light irradiated by the ultraviolet light source (UV lamp) 86, 87 by the UV glass 274, prevent it from leaking to the outside of the process space, and prevent the supply to the window by the sealing effect of the sealing member 280. The gas in the process space 84 flows out. In addition, the opening 286 penetrating through the side surface of the processing container 22 penetrates obliquely toward the center of the processing container 22, that is, toward the center of the processing substrate W held by the holding member 120. Therefore, the window 75 is provided at a position deviated from the center of the side surface of the processing container 22, but is formed in an elliptical shape which can be seen in a wide width in the lateral direction, and the state of the boundary of the substrate to be processed can be confirmed from the outside. In addition, the second window 76 has the same structure as the above-mentioned window 75, and has a double structure of transparent quartz 292 and ultraviolet-shielding uV glass 294. The transparent stone 292 is in a state of being in contact with the window mounting portion 296, and the first window frame 298 is locked and fixed to the window mounting portion 296 with a small screw 297. At the window mounting part 296 O: \ 87 \ 87879.DOC -41-U38453, a sealing structure fr \ ts \ —00 which is hermetically sealed with transparent quartz 292 is installed on the surface of the U38453. In addition, on the first window The outside of the frame 298 to make the uv glass 294! , Use small screws 304 to lock and fix the second window frame 3.2. 87 households day_mouth 76 is shielded by ultraviolet light source (UV lamp) 86, UV, UV light 294, UV and UV light outside to prevent it from leaking to the outside of the process space 84, and the sealing effect of the member 300 to prevent The gas supplied to the process space flows out. …, And: “In this embodiment, although the configuration of 5 ′ 76 is arranged on the side of the processing container 22 as an example, it is not limited to this, and three or more windows may be placed, or Of course, it can also be installed in a place other than the side. 〇〇) Here, the respective cases 10, 102, 108, 108 constituting the quartz gasket 100 will be described. 9 and FIG. 10, the quartz ring 100 is a combination of a lower case ⑽, a side case 104, an upper case 10 and a 108 cylindrical case, each of which is composed of The opaque quartz is formed for the purpose of protecting the processing container made of Cui Lu alloy such as fork gas and ultraviolet rays, and preventing metal pollution of the processing container 22. Fig. 41A is a plan view showing the structure of the lower case 102, and Fig. 41A is a side view showing the structure of the lower case 102. As shown in FIG. 41A and FIG. 41B, the lower box body 102 is formed in a plate shape corresponding to the shape of the inner wall of the processing container 22, and at the center thereof, a SiC substrate setting table 118 and a substrate to be processed are formed. ^ Circular opening 310. The circular opening 310 is formed in a size that can be inserted into the cylindrical box body 108, and O: \ 87 \ 87879.DOC -42-1238453 < an arm for inserting the holding member i is provided at an inner periphery of 120 degrees The recesses 31a to 31c at the ends before the portions 120a to 120c. In addition, the positions of the recessed portions 31〇a to 31〇c, the arm portions 120a to 120c of the holding member 12o do not interfere with the contact pins 13 of the lifter arm 2 and 13 ^, and do not interfere with the transfer robot Position of the robotic arm 98. In addition, a rectangular opening σ312 is provided in the lower case 102 with respect to the exhaust gas π74 formed at the bottom of the processing container 22. In addition, the lower case 102 is provided with a projection 31 for determining the position at an asymmetric position below, 3141). In addition, a concave portion 310de is formed on the inner periphery of the circular opening 310 to fit a protrusion of the cylindrical case 108 described later. In addition, an edge portion of the lower case 10 is provided with a side case 104. Of step-like part 3 1 5. 42A is a plan view showing the side box body 104, FIG. 42β is a front view of the side box 104, FIG. 42C is a rear view of the side box 104, and FIG. 42 is a left side view of the side box 104, FIG. 42E It is a right side view of the side box body 104. As shown in Figs. 42A to 42E, the outer shape of the side box body 104 is formed into a substantially rectangular frame shape corresponding to the inner wall shape of the processing container 22 and the four corners are R-shaped. A process space 84 is formed on the inside. In addition, the side box 104 is provided on the front surface 104a with an elongated slit 316 'opposite to the plurality of gas injection nozzles 93a of the gas injection nozzle portion 93 and extending in the horizontal direction, and is provided to be connected to a long-distance electrical connection. A u-shaped opening 317 at a position opposite to the communication hole 92 of the slurry portion 27. In this embodiment, the slits 3 and 6 and the opening 317 are connected to each other, but they may be formed as separate openings. O: \ 87 \ 87879 DOC -43- 1238453 In addition, the side box 104 is formed with a recess M 8 through which the robot arm of the aforementioned transfer robot 98 passes, at a position opposite to the transfer port 94 on the back surface 104b. In addition, the side box 104 is formed with a circular hole 319 corresponding to the aforementioned sensor unit 85 on the left side and 04c, and on the right side 104 (1, it is formed with respect to the aforementioned windows 75, 76, and Holes 32 ～ 322 of the sensor unit 77. Fig. 43A is a bottom view showing the structure of the upper box 106, and Fig. 43β is a side view showing the structure of the upper box 106. As shown in Figs. 43A and 43B, the upper box The outline of the body 106 is formed into a plate shape corresponding to the shape of the inner wall of the processing container 22, and rectangular openings 324 and 325 are formed at positions of ultraviolet light sources (uv lamps) 86 and 87. In addition, the upper case 106 The edge portion is provided with a stepped portion 326 for fitting the side box body 104. In addition, the upper box body 106 is provided with circular holes 3 27 to 329 corresponding to the shape of the cover member 82, and rectangular rectangular hole 33. FIG. 44A is a plan view showing the structure of the cylindrical box body 108, FIG. 44b is a side longitudinal sectional view of the cylindrical box body 108, and FIG. 44 (: is a side view of the cylindrical box body 08. As shown in FIG. 44A to FIG. 44C, the cylindrical box body 108 is formed in a cylindrical shape such as to cover the outer periphery of the quartz bell cover 112. Concave portions 008a to 108c of the contact pins 138a to 138c inserted into the lifting arm 132 are provided on the upper edge portion. In addition, the cylindrical case 108 is formed with a fitting lower case 1 on the outer periphery of the upper end. Concavity of 〇2 = protrusion io8d for mating position of 310d. (11) Here, the sealing structure of the lifting rod mechanism 30 will be described. Fig. 45 is an enlarged longitudinal sectional view of the lifting rod mechanism 30. Fig. 46 O: \ 87 \ 87879.DOC -44-1238453 shows a longitudinal sectional view of the sealing structure of the lifter mechanism 30. As shown in FIGS. 45 and 46, the lifter mechanism 30 is constituted by the driving section 136 command When the lifting shaft 134 is raised and lowered to raise and lower the lifting arm 132 inserted into the chamber 80, the bellows-shaped telescopic tube 332 covers the outer periphery of the lower shaft 134 in the through hole 80a of the inserted chamber 80 to prevent Contamination in the chamber 80. The telescopic officer 332 has a telescopic shape, for example, formed of a nickel-chromium heat-resistant alloy or a corrosion-resistant nickel alloy. In addition, the through-hole 80a is covered by a cover inserted into the lifting shaft 134. The member 34 is closed. In addition, the lifting arm 13 at the upper end of the lifting shaft 134 is locked by a bolt 334 The connecting member 336 of 2 is fitted with a cylindrical ceramic cover 338 fitted and fixed. The ceramic cover 338 is formed to extend below the connecting member 336 and is provided to cover the periphery of the telescopic tube 332 instead of the chamber 80. Therefore, the telescopic tube 332 in the process space 84 is extended to the upper side when the lifting arm 132 is raised, and is covered by a cylindrical cover 338 formed of ceramic. Therefore, the telescopic official 332 can be raised and lowered by The cylindrical cover 338 inserted into the through hole 80a is not directly exposed to the gas and heat of the process space material, so the deterioration due to the gas and heat can be prevented. (12) The following is a description of the use of the substrate processing apparatus 20 to perform the ultraviolet radical oxidation treatment on the surface of the substrate W to be processed and the long-distance plasma radical nitridation treatment performed thereafter. [Ultraviolet Radical Oxidation Treatment] Fig. 47A is a side view and a plan view showing the radical oxidation of the substrate W to be processed using the substrate processing apparatus 20 of Fig. 2, and Fig. 47B is a plan view showing the structure of Fig. 47A.

O: \ 87 \ 87879.DOC -45- 1238453 As shown in FIG. 47A, in the aforementioned process space 84, oxygen gas can be supplied from the gas injection nozzle portion 93, and after flowing along the surface of the substrate to be processed, it is discharged through Air port 74, full-wheel molecular pump 5 () and pump 201 are exhausted. By using the turbo molecular pump 50 'process waste force of the aforementioned process space 84, it is set at 10-3 to 10-6 d, which is required for the oxidation of oxygen radicals of the substrate W. Ting range. At the same time, it is desirable to drive the ultraviolet light source 86, 87 'which generates ultraviolet light with a wavelength of 172 nm2 to generate oxygen radicals formed / formed by oxygen radicals in the thus-formed oxygen stream to extend the substrate to be processed. When the% surface flows, the rotating substrate surface is oxidized. As a result of the oxidation of the oxygen radicals of the substrate W to be processed, an extremely thin oxide film with a thickness of less than 1 nm can be formed on the surface of the Shixi substrate with stability and reproducibility, especially equivalent to 2 to 3 atoms. The thickness of the layer is about ο · # nm. As shown in FIG. 47B, it can be seen that the ultraviolet light sources 86, 87 are tubular light sources extending in a direction intersecting with the direction of the oxygen flow, and the turbo molecular pump will exhaust the gas in the process space 84 through the exhaust port 74. On the other hand, the exhaust path shown by the dotted line in FIG. 47B that leads directly from the aforementioned exhaust core to the pump 50 is blocked by closing the valve 48b. Fig. 48 shows the substrate processing apparatus shown in Fig. 2. As shown in Fig. 47B, the substrate temperature is set to 4 °, and the ultraviolet light irradiation intensity and breast gas flow rate, or the oxygen partial pressure are variously adjusted. In the case where the Shiyu substrate is formed on the surface of the Shiyu substrate, the relationship between the film thickness and the oxidation time is "but in the experiment shown in Fig. 48," the nature of removing the surface of the Shixi substrate before the free radical oxidation "has The carbon remaining on the surface of the substrate is removed in the UV light excited nitrogen radicals. In addition, in an Ar atmosphere,

O: \ 87 \ 87879.DOC -46- 1238453 High temperature heat treatment to flatten the substrate surface. In addition, as the ultraviolet light source 86, 87, an excimer lamp having a wavelength of 1 72 nm was used. Referring to FIG. 48, the data of Series 1 shows that the intensity of ultraviolet light irradiation is set to 5% of the reference intensity (50mW / cm2) of the window surface of the ultraviolet light source 24B, and the process pressure is set to 665 mPa (5m Torr) and oxygen. The relationship between the oxidation time and the oxide film thickness when the flow rate is set to 30 SCCM, and the data of Series 2 shows that the ultraviolet light intensity is set to 0, the process pressure is set to 133Pa (1 Torr), and the oxygen flow rate is set to 3SLM. The relationship between the oxidation time and the thickness of the oxide film. The data of Series 3 shows the relationship between the oxidation time and the thickness of the oxide when the ultraviolet light intensity is set to 0, the process pressure is set to 2.66Pa (20m Torr), and the oxygen flow rate is set to 150 SCCM. Data, it shows that the UV light intensity is set to 100%, that is, set to the aforementioned reference intensity.

Relationship between oxidation time and oxide film thickness when pressure is set to 2.66Pa (20m Torr) and oxygen flow rate is set to 150 SCCM. In addition, the data of Series 5 'shows the relationship between the oxidation time and the oxide film thickness when the ultraviolet light intensity is set to 20% of the reference intensity, the process pressure is set to 2.66Pa (20m Torr), and the oxygen flow rate is set to 150 SCCM. The data of Series 6 shows the relationship between the oxidation time and the thickness of the oxide film when the UV intensity is set to 20% of the reference intensity, the process pressure is about 67Pa (0.5 Torr), and the oxygen flow rate is 0.5SLm. . In addition, the data of Series 7 shows the relationship between the oxidation time and the oxide film thickness when the ultraviolet light intensity is set to 20% of the reference intensity, the process pressure is set to 665Pa (5 Torr), and the oxygen flow rate is set to 2SLM. The data of Series 8 shows the oxidation time when the UV intensity is set to 5% of the reference intensity, the process pressure is 2.66Pa (20m Torr), and the oxygen flow rate is 150SCCM O: \ 87 \ 87879.DOC -47- 1238453 and Relationship between oxide film thickness. In the experiment of Fig. 48, the film thickness of the oxide film is obtained by the XPS method, but there is no uniform method to obtain such a very thin oxide film thickness below the i-plane. Therefore, the inventor of the present invention performs background correction and separation correction of 3/2 and 1/2 rotation states on the observed XPS spectrum of the Sl2p orbit shown in the figure, and uses the result shown in FIG. 50 The Si2p3 / 2XPS spectrum is mainly used in accordance with the teachings of H. Lu, et al., Appl. Phys, Lett. 71 (1997), pp. 2764) to calculate the oxide film using the formulas and coefficients of formula ⑴. Film thickness d. d = also sina · ιη 口 χ + / (^ j 〇 +) + 1;] · (1) λ = 2. 96 β = 0.75 But in formula ⑴ 1 is the measurement of the XPS spectrum shown in Figure 55 The exit angle is set to 30 in the example shown in the figure. . Count again! in,! The integral intensity corresponding to the light value of the oxide film (PWWx) corresponds to the peak value that can be seen in the energy region of 102 ~ 104eV in Fig. 50. On the other hand, in the energy region corresponding to the vicinity of 100 eV, the integrated intensity corresponding to the spectral peak value of the hair substrate is corresponding. Referring to FIG. 48 again, it can be confirmed that, compared with the UV light household, "7ti degree is small and the density of oxygen radicals formed in the four is small (series 丨, 2, 3, 8), although the oxide film thickness of the initial film is 〇nm, but the thickness of the oxide film will continue to increase with the oxidation time, in the series 4, 5, 6, 7 set the ultraviolet light irradiation intensity to a reference intensity ^ 20% or more, as schematically shown in Figure 51 It is shown that the oxide film stagnates when it reaches a film thickness of approximately 0.4 nm after the beginning of growth. 'O: \ 87 \ 87879.DOC -48-1238453 after a certain degree of stagnation time, it will sag again. It begins to grow. The relationship between the figure and FIG. 51 means that the oxidation treatment on the surface of the Shi Xi substrate ° can form a very thin oxide film with a thickness of about 0.4 nm. Also, as shown in FIG. 48, It can be seen that the oxidized film formed with the same thickness has the same thickness because such a dwell time lasts for a certain period of time. That is, according to the present invention: the oxide of the same thickness of about 0.4 nm is formed on the Shi Xi substrate Fig. 52A and Fig. 52B are diagrams schematically showing a system for forming a thin oxide film on the silicon substrate. In these figures, you must pay attention to the structure on the silicon substrate). Referring to FIG. 52A, each silicon atom on the surface of the silicon substrate is combined with 2 oxygen atoms to form a 1-atom layer of oxygen. In its typical state, the Shi Xi atom on the substrate surface is positioned by the two rich atoms inside the substrate and two oxygen atoms on the substrate surface to form a secondary oxide. In this state, in the state of FIG. 52B, The silicon atom in the uppermost layer of the silicon substrate is positioned by # oxygen atoms to obtain a stable state of Si4 +. It may be because of this reason that the oxidation is rapidly performed in the state of Fig. 52A, and the oxidation is stopped in the state shown in the figure. The thickness of the oxide film in the state of FIG. 52B is 0.4 nm, which is consistent with the oxide film thickness in the stagnant state observed in FIG. 48. In the XPS spectrum of FIG. 50, the oxide film thickness is 0.01 nm or In the case of 〇2nm: the low peak visible in the energy range of ΗΠ ~ 104eV corresponds to the secondary oxide shown in Figure 52, and when the oxide film thickness exceeds 〇3 nm, the peak value displayed in this energy range Department and cause correction 4+, so it can be considered to show Formation of an oxide film over 1 atomic layer. The phenomenon of stagnation of the oxide film thickness at a film thickness of 0.4 nm is not limited to O: \ 87 \ 87879.DOC -49-1238453 as shown in Figure 47A and Figure 47B. 2 The free radical oxidation process should be the same as long as the oxide film formation method can form the same thin oxide film with good fineness. From the state of Fig. 52B, if the oxidation is continued, the thickness of the oxide film will increase again. Fig. 53 shows the formation of a thickness of 0.4 nmiZrSi04x film and electrode film on the oxide film formed by the ultraviolet light radical oxidation process of Figs. 47A and 47B using such a substrate processing apparatus 20. The illustrated FIG. 54B) shows the relationship between the obtained thermal oxide film conversion film thickness Teq and the leakage current Ig for the obtained laminated structure. However, the leakage current characteristics in Fig. 53 are measured between the aforementioned electrode film and the silicon substrate, and the voltage of Vft-uv is measured based on the flat band voltage Vfb as a reference. For comparison, the leakage current characteristics of the thermal oxidation film are also shown in FIG. 53. In addition, the conversion film thickness shown in the figure refers to a structure that combines an oxide film and a ZrSiOx film. Referring to FIG. 53, when the oxide film is omitted, that is, when the thickness of the oxide film is 0 h, the leakage current density exceeds the leakage current density of the thermal oxide film, and the thermally converted film thickness Teq also becomes about 17 nm. The larger value from left to right. In this regard, it is understood that if the film thickness of the oxide film is increased from 0 nm to 0.4 nm, the value of the thermal oxide film exchange film thickness Teq starts to decrease. In such a state, the oxide film is formed between the silicon substrate and the ZrSlOx film. The physical film thickness should actually increase but the transmutation film thickness Teq decreases, which is directly formed on the silicon substrate. In the case of the ZrCh film, it means that diffusion of Zr into the silicon substrate or Sl into ZrSi0x film occurs on a large scale as shown in Fig. 54. In silicon O: \ 87 \ 87879.DOC -50 -1238453 A thick interface layer is formed between the substrate and the substrate. In this regard, as shown in the figure, it is considered that the formation of the interface layer can be suppressed by interposing an oxide film having a thickness of Q.4 nm therebetween. As a result, the converted film thickness can be reduced. It follows that the value of the leakage current also decreases with the thickness of the oxide film. However, Figs. 54A and 54B show a schematic cross-section of the experimental material thus formed, and a structure in which an oxide film 442 is formed on the silicon substrate 44 1 and a ZrSiOx film 443 is formed on the oxide film. On the other hand, if the film thickness of the oxide film exceeds 0.4 nm, the value of the film thickness converted from the thermal oxide film will start to increase again. When the film thickness of the oxide film exceeds 0.4 nm, the value of the leakage current will decrease as the film thickness increases. It can be thought that the increase in the converted film thickness is due to the increase in the physical film thickness of the oxide film. Big. In this way, the film thickness near 0.4 that the stagnation of the oxide film growth observed in FIG. 48 corresponds to the minimum value of the converted film thickness of the system including the oxide film and the high-dielectric film. It can be seen from FIG. 52 ( The stable oxide film shown in B) can effectively prevent the diffusion of metal elements such as Zr into the silicon substrate, and even if the thickness of the oxide film is larger, the effect of preventing the diffusion of metal elements will not be much improved. In addition, it can be seen that the value of the leakage current when using an oxide film with a thickness of 0.4 nm is about two digits smaller than the value of the leakage current of a thermal oxide film with a corresponding thickness. By using the insulating film thus structured in a MOS transistor, In the gate insulation film, the gate leakage current can be minimized. In addition, as a result of the stagnation phenomenon of the oxide film growth of 0.4 nm illustrated in FIG. 4 8 or 51, even if the oxide film 442 formed on the silicon substrate 441 as shown in FIG. 55A has the original film thickness unchanged. The unevenness in the growth of the oxide film is O: \ 87 \ 87879.DOC -51-1238453 ::: Thickness increase is stagnated around 0.4 as shown in Figure 55B, so it continues with the delay period. The oxide film is grown, and as shown in FIG. 55c, the oxide film 442 is very flat and has the same thickness. As explained previously, there is currently no uniform film thickness measurement method for very thin oxide films. Therefore, the film thickness value of the oxide film material 2 in FIG. 55C may vary depending on the measurement method. However, for the reasons explained earlier, it is known that the stoppage occurs during the growth of the oxide film; the thickness of the belt is 2 atomic layers, so it can be considered that the ideal film thickness of the oxide film 442 is about 2 atomic layers. In this preferred thickness, the thickness of the 2 _ atomic layer is ensured in the whole of the oxide film 442, and if the thickness of a 3 atomic layer thickness region is formed in a certain part. That is, it can be considered that the ideal thickness of the oxide film 442 is actually in the range of 2 to 3 atomic layers. [Remote Plasma Free Radical Nitriding] FIG. 56 shows the configuration of a remote plasma unit used in the substrate processing apparatus 20. As shown in FIG. 56, the long-distance plasma unit 27 is a block 27A made of aluminum, which typically includes a gas circulation channel 27a, a gas inlet 27b, and a gas outlet 76c connected thereto. A part of the aforementioned block 27A is formed with a ferrite core 27B. A fluorine resin processing 27d is provided on the inner surfaces of the gas circulation path 27a, the gas inlet 27b, and the gas outlet 27c. A high frequency of 400 kHz is supplied from a coil wound around the ferrite core 27B. A plasma 27C is formed in the gas circulation path 27a. With the excitation of plasma 27C, although O: \ 87 \ 87879.DOC -52-1238453 is formed in the aforementioned gas circulation path 27a, there are nitrogen radicals and nitrogen ions, but nitrogen ions will disappear for a while. Zhao Chu, ::: = Zhao Dehuan radical N /. In addition, the structure of FIG. 56 ^ ion transition device 27e emitting nitrogen gas outlet 27C, and :: = is placed on the front to remove electric particles such as nitrogen ions, and only nitrogen radicals are supplied in the aforementioned process space 84 . Even if the ion filter and the device 27e are not grounded, the structure of the ion 过 me also functions as a diffusion plate ❹, and can sufficiently remove charged particles such as ions. Fig. 57 shows the relationship between the number of ions and the energy of the electrons formed by the remote plasma unit 27 and the comparison with the microwave plasma source. As shown in Fig. 57, when the plasma is excited by the microwave, nitrogen ionization of the nitrogen molecules is promoted, and a large amount of nitrogen ions are formed. On the other hand, when the plasma is excited at a high frequency below 500 kHz, the number of nitrogen ions formed is greatly reduced. When the plasma treatment is performed by microwave, as shown in FIG. 58, a high vacuum and high frequency plasma of 1.33 \ 103 ~ 1.33 \ 106? (10-1 ~ 10-4 丁 〇): 1 :) are required. The processing can be performed at a relatively high pressure of 13.3 to 13.3 kPa (0.1 to 100 Torr). Table 1 below shows the comparison of ionization energy conversion efficiency, possible discharge pressure range, plasma power consumption, and process gas flow between the case where the plasma is excited by microwaves and the case where the plasma is excited by high frequencies. Table 1

Ionization energy conversion efficiency discharge possible pressure range plasma consumption power process gas flow microwave l.OOxlO'2 0.1m ~ 0 · 1 Torr 1 ~ 500W 0 ~ 100 SCCM high frequency l.OOxlO " 7 0.1 ~ 100 Torr 1 ~ 10kW 0.1 ～ 10SLM O: \ 87 \ 87879.DOC -53- 1238453 With reference to Table 1 ', it can be seen that the ionization energy conversion efficiency is about lxl0-2 in the case of microwave excitation, and reduced to RF in the case of RF excitation. About IxlO · 7 'In addition, regarding the possible wasteful force of the discharge, compared with the microwave excitation (0.1 · 1 Torr ~ 0 · 1 Torr gate, 丄 丄 on · U33mPa ~ 13.3Pa), the number of Chinese daggers is several. It is about 0.1 ~ 1〇〇 丁 01 ^ 〇3_31 ^ ~ 13.3] ^^). As a result, the plasma power consumption is greater in RF excitation than in microwave excitation, and process gas flow is much larger in RF excitation than in microwave excitation. In the substrate processing apparatus 20, the nitridation treatment of the oxide film is performed with a nitrogen radical 仏 * instead of a nitrogen ion, so it is desirable that the number of excited nitrogen ions is small. From the viewpoint of minimizing the damage to be applied to the substrate to be processed, it is also desirable that the number of excited nitrogen ions is small. In addition, in the substrate processing apparatus 20, the base oxide film with a small number of excited nitrogen radicals and a thickness of about 2 to 3 atomic layers under the high dielectric gate insulating film is very suitable for nitriding. 59A and 59B are a side view and a plan view, respectively, when radical nitridation of the substrate W to be processed is performed using the substrate processing apparatus 20. As shown in Figs. 59A and 59B, Ar gas and nitrogen gas are supplied to the long-range plasma unit 27. Therefore, the plasma is excited by a high frequency at a frequency of several hundred kHz to form nitrogen radicals. The formed nitrogen radicals flow along the surface of the substrate w to be processed, and are discharged through the exhaust port 74 and the pump 201. As a result, the aforementioned process space 84 can be set to a process pressure in the range of 1-3 Pa to i3.3 kPa (0.01 to 100 Torr) suitable for radical nitridation of the substrate w. The nitrogen radicals thus formed will nitrate the surface of the substrate W to be processed while flowing along the surface of the substrate W to be processed. O: \ 87 \ 87879.DOC -54- 1238453 In the nitriding step of Fig. 59A and Fig. 59B, in the cleaning step before the nitriding step, the aforementioned valves 48a and 212 are opened, and the aforementioned valve is closed by closing the valve 48a The pressure in the process space 84 is reduced to the pressure of 133xl {rl ~ 133xl0_4. The oxygen and moisture remaining in the process space 84 will be removed. However, in the subsequent nitriding treatment, the valves 48a and 212 will be removed. Is turned off, and the turbo molecular pump is not included in the exhaust path of the process space 84. In this way, by using the substrate processing apparatus 20, a very thin oxide film can be formed on the surface of the substrate to be processed, and the surface of the oxide film can be further nitrided. FIG. 60A shows the foregoing when a long-range plasma unit 27 is used and nitrided under a condition shown in Table 2 by a substrate processing apparatus 20 to perform a thermal oxidation process on a silicon substrate to form an oxide film having a thickness of 2.0 nm. The distribution of nitrogen concentration in the oxide film. FIG. 60B shows the relationship between the distribution of nitrogen concentration and the distribution of oxygen concentration in the same oxide film.

Nitrogen flow i Ar flow Plasma power pressure temperature breaking wave 〇— 15 SCCMj-120W 8.6m Torr 500 ° C Directional frequency 50 SCCM 2SLM 2kW 1 Torr 700 ° C Refer to Table 2 for RF nitriding using a substrate processing device 20 During the process, nitrogen was supplied into the process space 84 at a flow rate of 50 SCCMi or Ar was supplied at a flow rate of 2 SLM. Nitriding treatment was performed at a pressure of 1 Torr (133pa), but the process space 84 was temporarily left before the nitriding process started. The pressure is reduced to about 10.6 τ〇ΓΓ (1.33x10 Pa), and oxygen or water damage remaining inside is fully removed. Therefore, in the nitriding treatment performed under the aforementioned pressure of i Torr & right, in the process space 84, the residual oxygen can be diluted by Ar or nitrogen, and the residual oxygen concentration, so the thermodynamic activity of the residual oxygen The degree becomes very small.

O: \ 87 \ 87879.DOC -55- 1238453 In this regard, in the nitriding process using a microwave plasma, the pressure at the time of the nitriding process is the same as the removal pressure, so it can be considered in the plasma atmosphere. Residual oxygen system has high thermodynamic activity. Referring to Fig. 60A, in the case where the plasma is nitrided by microwave excitation, the concentration of nitrogen introduced into the oxide film is limited, so it can be seen that nitriding of the oxide film is not substantially performed. In this case, as in this embodiment, when the plasma is nitrided by rf excitation, it can be known that the nitrogen concentration in the oxide film changes linearly with the depth, and reaches a concentration of nearly 20% near the surface. . Figure 61 shows the measurement principle of Figure 60a using XPS (X-ray spectroscopy). Referring to FIG. 61, a test material for forming an oxide film 412 on a silicon substrate 411 is irradiated obliquely by X-rays at a specific angle, and then the detectors Det 1, DET2 detect the excited X-ray spectrum at various angles. At this time, for example, is set to 90. In the detector DET1 with a deep detection angle, the path in the oxide film 412 of the excited x-ray is short, so the X-ray spectrum detected by the aforementioned detector DET1 contains a lot of information about the lower part of the oxide film 412. In the detector DET2 which is set to a shallow detection angle, the path in the oxide film 412 that excites x-rays is long, so the detector DET2 mainly detects information near the surface of the oxide film 412. Fig. 60B shows the relationship between the nitrogen concentration and the oxygen concentration in the aforementioned oxide film. However, in Fig. 60B, the oxygen concentration is represented by the x-ray intensity corresponding to the ols. Referring to FIG. 60B, in the case where the oxide film is nitrided with rf remote plasma as in the present invention, the oxygen concentration decreases as the nitrogen concentration increases, so

O: \ 87 \ 87879.DOC -56-1238453 In the oxide film, the nitrogen atom will replace the oxygen atom. For this reason, in the case where the oxide film is nitrided with a microwave plasma, such a replacement relationship cannot be seen, and a relationship that the oxygen concentration decreases with the nitrogen concentration cannot be seen. In addition, particularly in FIG. 60B, in the case where 5 to 6% of nitrogen is introduced by microwave nitriding, the addition of oxygen concentration Δ is considered to increase the oxide film with nitriding. With the increase of the oxygen concentration of such microwave nitridation, the microwave W is performed at high true M, so it can be considered that the oxygen or water remaining in the processing space is not caused by the gas in the long-range electric frequency as in the south frequency. Dilute with nitrogen gas, but because of high activity in the atmosphere. FIG. 62 shows the formation of an oxide film with a thickness of 4 in. (0 4 and 7A (0.7 nm)) in the substrate processing apparatus 20, and the nitriding step of FIG. 59A and FIG. 59B using the aforementioned long-range plasma unit #The relationship between the nitriding time and the degree of crystallization in the film. Fig. 63 shows the segregation of nitrogen on the oxide film surface with the nitriding treatment of Fig. 62. In addition, Figs. It also shows that the oxide film is formed to a thickness of 5 persons (0.5 nm) * 7A (〇7 nm) by a rapid thermal oxidation treatment. Many ..., Fig. 62, the nitrogen concentration in the film is that of any oxide film It will rise together with nitriding treatment, but especially when it has an oxide film with a thickness of 0.4 nm corresponding to the 2-atomic layer formed by ultraviolet radical oxidation, or has an oxide film close to this. In the case of a thermally oxidized film with a film thickness of 5 nm, the nitrogen concentration in the film will increase under the same film formation conditions because the oxide film is thin. Figure 63 shows in Figure 6 丨 Detectors DET 丨 and DET2 are set respectively The results are shown in Fig. 63, and the vertical axis of Fig. 63 is 90%. Angular obtained by dispersion

O: \ 87 \ 87879.DOC -57-1238453 The value of the x-ray spectral intensity from the nitrogen atoms in the whole plutonium, divided by 30. The detection angle is obtained from the X-ray spectral intensity of nitrogen atoms segregated on the film surface, and t is the nitrogen segregation rate. Above this value, nitrogen segregation on the surface occurs. Many ..., Fig. 63. In the case where the oxide film is formed to a thickness of 7A by ultraviolet light-excited oxygen radical treatment, the nitrogen segregation rate becomes 1 or more. The nitrogen atom segregates at the initial surface. In the state of the oxynitride film UA in FIG. 1, it can be seen that the distribution in the film after the nitriding treatment for 90 seconds is approximately the same. It can also be seen that even with other films, the nitridation treatment with glow can make the distribution of nitrogen atoms substantially the same. In the experiment shown in FIG. 64, in the substrate processing apparatus 20, for the HD wafer (wafer # 1 to wafer # 10), the aforementioned ultraviolet light radical oxidation treatment and long-range electric water lice treatment were repeated. . Fig. 64 shows the variation in film thickness of each of the wafers of the oxynitride film thus obtained. However, the results shown in FIG. 64 relate to the formation of an oxide film having a thickness of 0.4 Satoshi when the ultraviolet light source 86 is driven by the substrate processing apparatus 20, and the ultraviolet light radical oxidation treatment is performed. The oxide film formed in this way is converted into a case of an oxynitride film containing about 4% nitrogen atoms by driving the aforementioned long-distance electro-water ^ 27 into an order process. > According to FIG. 64 ', the vertical axis shows the film thickness obtained by phase symmetry for the oxynitride film thus obtained, but the film thickness obtained from FIG. 6 is determined by Da Hui An at 8A ( 0.8 nm). FIG. 65 shows that a substrate thickness of 0 μm is formed on a substrate of Shi Xi by a radical oxidation treatment using an ultraviolet light source 86, 87 on a substrate of Shi Xi.

O: \ 87 \ 87879.DOC -58- 1238453 After oxidizing the film ′ In the case of nitriding it by the remote plasma unit 27, the result of investigation of the increase in film thickness due to nitridation is obtained. Referring to FIG. 65, it can be seen that the initial (before nitriding) oxide film having a thickness of about 0.38 ㈤ is an increase in film thickness when nitrogen atoms of 4 to 7% are introduced during the nitriding process. Up to 0.5nm. On the other hand, when a nitrogen atom of about 15/0 is introduced during the nitridation process, the film thickness is increased to about 13 nm. In this case, it can be considered that the introduced nitrogen atom penetrates into the silicon substrate through the oxide film. A nitride film is formed. In Fig. 65, the relationship between the nitrogen concentration and the film thickness in the ideal model structure for the introduction of only one layer of nitrogen in an oxide film with a thickness of 0.4 nm is shown by ▲. Referring to FIG. 65, in this ideal model structure, the film thickness after the introduction of nitrogen atoms becomes about 0.5 nm, in this case, the film thickness increases by about 0.1 nm, and the nitrogen concentration is about 12%. If this model is used as a reference, it is concluded that when the oxide film is nitrided by placing 20 on the substrate, it is desirable that the film thickness be increased to suppress the same degree of 0.1 to 0.2 nm. In addition, the maximum amount of nitrogen atoms that can be taken into the film at this time can be estimated to be about 20/0. In addition, in the above description, an example in which a substrate processing device 20 was used to form a non-ψ thin base oxide film was described. However, the present invention is not limited to such a specific embodiment, and can be applied to a silicon substrate or a silicon substrate. On the silicon layer, a high-quality oxide film, nitride film, or oxynitride film with a desired film thickness is formed. The invention has been described above with reference to preferred embodiments, but the invention is not limited to the specific embodiments described above, and various changes and modifications may be made within the spirit of the scope of the patent application.

O: \ 87 \ 87879.DOC -59- 1238453 [Brief Description of the Drawings] Figure 1 is a drawing showing a semiconductor device containing a high-dielectric gate insulating film. Fig. 2 is a view showing the structure of an embodiment of a substrate processing apparatus of the present invention. Fig. 3 is a side view showing the structure of one embodiment of the substrate processing apparatus of the present invention. Fig. 4 is a cross-sectional view taken along line A-A in Fig. 2. FIG. 5 is a front view showing the configuration of a machine disposed below the processing container 22. FIG. 6 is a plan view showing the structure of a machine disposed below the processing container 22. FIG. 7 is a side view showing the configuration of a machine disposed below the processing container 22. FIG. 8A is a plan view showing the configuration of the exhaust path 32. FIG. FIG. 8B is a front view showing the configuration of the exhaust path 32. FIG. Fig. 8C is a longitudinal sectional view taken along line b-b. Fig. 9 is an enlarged longitudinal sectional view of the processing container 22 and its peripheral devices. Fig. 10 is a plan view of the inside of the processing container 22 with the lid member 82 removed from above. FIG. Π is a plan view of the processing container 22. The figure shows a front view of the processing container 22. FIG. 13 is a bottom view of the processing container 22. Fig. 14 is a longitudinal sectional view taken along the line C-C in Fig. 12. FIG. 15 is a right side view of the processing container 22. FIG. 16 is a left side view of the processing container 22. O: \ 87 \ 87879.DOC -60- 1238453 Fig. 17 is a longitudinal sectional view showing the installation structure of the ultraviolet light sources 86 and 87 in an enlarged manner. FIG. 18 is a longitudinal sectional view showing the structure of the gas injection nozzle section 93 in an enlarged manner. FIG. 19 is a cross-sectional view showing the structure of the gas injection nozzle section 93 in an enlarged manner. FIG. 20 is an enlarged front view showing the configuration of the gas injection nozzle portion 93. FIG. FIG. 21 is a longitudinal sectional view showing an enlarged configuration of the heating section 24. FIG. 22 is an enlarged bottom view of the heating unit 24. Fig. 2 is a longitudinal cross-sectional view of the enlarged penetration structure of the second inflow port 17 0 ′ and the second outflow port 17 4. FIG. 24 is a longitudinal sectional view showing the mounting structure of the flange 140 in an enlarged manner. Fig. 25 is a longitudinal sectional view showing the mounting structure of the upper end portion of the clamp mechanism 190 on an enlarged scale. FIG. 26 is a diagram showing the structure of the SiC heater 114 and the control system of the SiC heater 114. FIG. Fig. 27A is a plan view showing the structure of the quartz bell cover H2. Fig. 27B is a longitudinal sectional view showing the structure of the quartz bell cover 112. FIG. 28A is a perspective view of the structure of the quartz bell cover 112 seen from above. FIG. 28B is a perspective view of the structure of the quartz bell cover 112 seen from below. Fig. 29 is a system diagram showing the structure of an exhaust system of a pressure reduction system. FIG. 30A is a plan view showing the configuration of the holding member 12o. Fig. 30B is a side view showing the configuration of the holding member 12o. FIG. 31 is a longitudinal sectional view showing the configuration of the rotation driving section 28 disposed below the heating section 24. As shown in FIG. Fig. 32 is a longitudinal sectional view showing an enlarged "rotation drive unit".

O: \ 87 \ 87879.DOC -61-1238453 Fig. 33A is a cross-sectional view showing the structure of the bracket cooling mechanism 234. Fig. 33B is a side view showing the structure of the bracket cooling mechanism 234. FIG. 34 is a cross-sectional view showing the configuration of the rotation position detecting mechanism 232. FIG. 3A is a diagram showing the non-detection state of the rotational position detecting mechanism 2 3 2. FIG. 35B is a diagram showing a detection state of the rotation position detecting mechanism 232. Fig. 36A is a waveform diagram showing an output signal S of the light receiving element 268 of the rotation position detecting mechanism 232. FIG. 36B is a waveform diagram of the pulse signal P output from the rotation position determination circuit 270. Fig. 37 is a flowchart illustrating a rotational position control process performed by the control circuit. Figure 38 is a cross-sectional view of the installation location of the windows 75, 76 seen from above. Fig. 39 is a cross-sectional view of the enlarged display window 75. Fig. 40 is a cross-sectional view of the enlarged display window 76. FIG. 41A is a plan view showing the structure of the lower case 102. FIG. FIG. 41B is a side view showing the structure of the lower case 102. FIG. FIG. 42A is a plan view showing the configuration of the side box body 104. FIG. FIG. 42B is a front view showing the structure of the side box body 104. FIG. FIG. 42C is a rear view showing the configuration of the side box body 104. FIG. FIG. 42D is a left side view showing the structure of the side box 104. FIG. 42E is a right side view showing the structure of the side box 104. FIG. FIG. 43A is a bottom view showing the structure of the upper case 106. FIG. FIG. 43B is a side view showing the structure of the upper case 106. FIG. FIG. 44A is a plan view showing the configuration of the cylindrical case 108. FIG. O: \ 87 \ 87879.DOC -62- 1238453 Fig. 44B is a side longitudinal sectional view showing the structure of a cylindrical box body 108. Fig. 44c is a side view showing the configuration of the cylindrical case body 108. Fig. 45 is an enlarged longitudinal sectional view of the lifter mechanism 30. Fig. 46 is a longitudinal sectional view showing an enlarged seal structure of the lift lever mechanism. FIG. 47A shows the side and the side of the case where the board is freely edited using the substrate processing apparatus 20 of FIG. 2. Fig. 47B is a plan view showing the structure of Fig. 47A. Fig. 48 is a diagram showing the substrate oxidation processing steps performed using a substrate processing apparatus. Fig. 9 is a diagram showing a film thickness measurement method used in accordance with the present invention. Fig. 50 is a diagram showing another method for measuring the film thickness of xps used in accordance with the present invention. Fig. 51 is a diagram schematically showing a stagnation phenomenon observed until the oxide film thickness grows when the oxide film is formed by the substrate processing apparatus 20. FIG. 52A is a diagram showing an oxide film formation process 1 on the surface of a silicon substrate. FIG. 52B is a view showing an oxide film formation process 2 on the surface of the silicon substrate. Fig. 53 is a graph showing the leakage current characteristics of the obtained oxide film in the first embodiment of the present invention. FIG. 54A is a diagram illustrating the cause of the leakage current characteristic of FIG. 53. FIG. 54B is a diagram explaining the cause of the leakage current characteristic of FIG. 53. FIG. Fig. 55A is a diagram showing an oxide film forming step 1 generated in the substrate processing apparatus. FIG. 55B shows an oxide film formation step generated by the substrate processing apparatus 20

O: \ 87 \ 87879.DOC -63-1238453 Picture of step 2. FIG. 550 is a view showing an oxide film forming step 3 generated in the substrate processing apparatus 20. FIG. Fig. 56 is a diagram showing the composition of a long-distance electric source used in the substrate processing apparatus. Figure 57 is a graph comparing the characteristics of RF long-range plasma and microwave plasma. Fig. 58 is another graph comparing the characteristics of RF long-range plasma and microwave plasma. Fig. 59A is a side view showing the nitriding treatment of the oxide film using the substrate processing apparatus 20. Fig. 59B is a plan view showing the nitriding treatment of the oxide film using the substrate processing apparatus 2 (). FIG. 60A shows the aforementioned oxidation when nitriding the 2.0 nm-thick oxide film 'formed on the Shixi substrate by the substrate processing apparatus 20 by thermal oxidation treatment using the remote plasma unit 27 under the conditions shown in Table 2. Distribution of nitrogen concentration in the film. _ Is a graph showing the relationship between the nitrogen concentration distribution and the oxygen concentration distribution in the same oxide film. Fig. 61 is a schematic diagram showing the "" used in the present invention. Fig. 62 is a graph showing the relationship between the nitriding time and the nitrogen concentration in the film based on the long-distance electropolymerization of the oxide film. The relationship between the nitriding time and the nitrogen distribution in the film. Figure 64 shows the film thickness variation of the entire oxynitride film formed by the nitriding process of the oxide film. Film thickness increase

O: \ 87 \ 87879.DOC -64- 1238453 [Illustration of Symbols] 10 semiconductor device 11 Si substrate 12 base oxide film 12 A oxynitride film 13 high dielectric film 14 gate electrode 20 substrate processing device 22 processing container 22a front 22b rear 22c bottom 22d left side 22e Right side 22g supply port 24 heating section 26 ultraviolet irradiation section 26a cabinet 26b bottom opening 26c edge section 27 remote plasma section 27a gas circulation path 27b gas inlet 128 motor 128a drive shaft 130 magnet coupling 132 lift arm 134 lift shaft 136 Drive sections 138a to 138c abut pin 140 flange 142 center hole 144 first water passage 146 first flange 146a L-shaped communication hole 146b stepped portion 148 second flange 150 second water passage 152 first inflow pipe 154 first 1 inlet 156 outlet pipe 158 1st outlet 160 bolt 162 mounting hole 164 temperature sensor O: \ 87 \ 87879.DOC -65- 1238453 27c gas outlet 166a ~ 166f terminal for power cable connection 27d fluorine resin processing 170 2nd inlet 27e ion filter 174 2nd outlet 27A block 176 plug 27B ferrite core 178 position determining hole 27C plasma 180 seal member (0 ring) 28 rotary drive Portion 182 Seal member (0 ring) 30 Lifting rod mechanism 184 Seal member (0 ring) 32 Exhaust path 186 Seal member (0 ring) 32a Opening portion 188 Seal member (0 ring) 32b Tapered portion 190 Clamp mechanism 32c Bottom 190a Outer cylinder 32d Main exhaust pipe 190b Shaft 32e Discharge port 192 Coil spring 32f Lower 193 Nut 32g Diversion port 195 Gasket 34 Gas supply unit 196 Heating control circuit 36 Frame 197, 199 L-shaped gasket 38 Bottom frame 197a, 199a cylindrical part 40, 41 vertical frame 197b, 199b protruding part 40a cable duct 197c, 197d cylindrical part 41a exhaust duct 198 temperature regulator 42 middle frame 200 power supply 44 upper frame 201 pump O: \ 87 \ 87879. DOC -66 1238453 46 Cooling water supply unit 48a, 48b Exhaust valve for solenoid valve 50 Turbo molecular pump 50a Discharge pipe 51 Vacuum line 51a Divert line 52 Power supply unit 57 UV lamp controller 58 Gas line 60 Emergency stop switch 62 bracket 64 temperature regulator 66 gas box 68 ion measurement controller 70 APC controller 72 TMP controller 74 exhaust port 75 first window 76 second window 77 sensor unit 80 chamber 80a penetrates Hole 82 Cover member 84 Process space (processing space) 202 Exhaust line 204 Exhaust line 205 Pressure gauge 206 Valve 208 Branch line 210 Valve 211 Variable diaphragm 212 Valve 214 Pressure gauge 216 Turbine line 218 Check valve 220 Diaphragm 222 Valve 230 Bracket 230a Water passage for cooling water 230b Cooling water supply hole 230c Cooling water supply discharge hole 230d Central hole 230e, 230f Through hole 232 Rotary position detection mechanism 234 Bracket cooling mechanism 236, 237 Ceramic bearing 238 Flange 240 Bolt O: \ 87 \ 87879.DOC -67- 1238453 85 sensor unit 85a ~ 85c pressure gauge 86, 87 external light source (ultraviolet light source) 88 transparent window 88a sealing surface 88b protective cover 89 sealing member (〇ring) 90 supply pipe Road 91 locking member 92 supply port 93 gas injection nozzle section 93al ~ 93an injection port 93bl ~ 93b3 nozzle plate 93cl ~ 93c3 recess 93dl ~ 93d3 supply hole 94 transfer port 96 gate valve 97a first quality controller 97b second quality control Device 98 transfer automatic machine 991 ~ 995 gas supply line 100 quartz gasket 102 lower case 104 side case 242 flange 244 partition wall 246 exhaust hole 248 driven side magnet 250 magnet cover 252 atmosphere Side rotation portion 252a Lower end portion 254, 255 Bearing 256 Drive side magnet 257 Transmission member 258 Rotation detection unit 260, 261 Slot plate 262, 263 Photointerrupter 264 Bearing frame 266 Light emitting element 268 Light receiving element 268 Light receiving element 270 Rotation position determination circuit 272 Transparent quartz 274 UV glass 276 Window mounting section 277 Small screw 278 First window frame 280 Seal member O: \ 87 \ 87879 DOC 68- 1238453 282 Second window frame 284 Small screw 286 Opening 292 Transparent quartz 294 UV glass 296 Window mounting section 297 Small Screw 298 1st window frame 300 sealing member (0 ring) 302 2nd window frame 304 small screw 310 circular opening 310a ~ 310c recessed portion 310d recessed portion 312 opening (rectangular) 314a, 314b protrusion 315 'stepped portion 316 slit 317 opening 318 recess 319 round hole 320 ~ 322 holes 324, 325 rectangular opening 104a front 104b back 106 upper case 108 cylindrical case 108 a ~ 108c recess 108d protrusion 110 base 112 quartz bell cover 112a protrusion 112b cylinder 112c top plate 112d Hollow section 112e Beam section 112f Insertion hole 112g ~ 112i Hub 113 Internal space 114 SiC heater 114a First heating section 114b, 114c 2, the third heating part 114d through the socket 114e through the socket 116 thermal reflection member (reflector) 116a through the socket 118 SiC substrate setting table (heating member) 326 step-shaped part O: \ 87 \ 87879.DOC -69- 1238453 119 pyrometer 120 holding member 120a ~ 120c arm 120d holding member 120e ~ 120g hub 120i chamfered portion 122 housing 124 internal space 126 ceramic shaft 327 ~ 329 round hole 330 corner hole 332 telescopic tube 334 bolt 336 connection member 338 Ceramic cover 340 cover member 411 silicon substrate 412 oxide film 441 silicon substrate 442 oxide film 443 ZrSiOx O: \ 87 \ 87879.DOC -70-

Claims (1)

1238453 Pick up and apply for patent Fangu:. A substrate processing device, which is characterized by: a processing container with a processing space internally divided, and a heating section that heats the substrate to be processed inserted in the aforementioned processing space to a special temperature A driving mechanism that holds the substrate to be processed above the heating portion, a driving mechanism that rotates and drives the shaft of the holding member that passes through the heating portion, == the side of the processing container, and is held to the holding member The aforementioned substrate to be processed, a gas ejection portion for ejecting the gas, and an exhaust port provided on the other side of the aforementioned processing container to exhaust the gas passing through the aforementioned substrate to be processed. 2. For the substrate processing device according to item 丨 of the patent application, wherein the gas injection unit is located in Taidangu a, a plurality of gas injection ports are arranged in a row in the direction of the water thousand. 3. The substrate processing apparatus according to item 2 of the scope of patent application, wherein the plurality of gas injection ports opening to the processing space are provided on the inner wall surface of the processing container. 4. The substrate processing apparatus according to item 2 of the scope of the patent application, wherein the gas injection unit is provided on a wall surface of the processing container, and a nozzle member having a plurality of gas injection ports is provided. 5. The substrate processing device according to item 4 of the scope of patent application, wherein the aforementioned mouthpiece member is provided on the wall surface of the aforementioned processing container, so that it is formed by the front O: \ 87 \ 87879.DOC 1238453 6. 7 · 8 · 9. 10. A gas is ejected toward a space above the substrate to be processed from a side of an outer periphery of the substrate to be processed. For example, the substrate processing apparatus of the scope of application for a patent, wherein the gas injection section is connected to a plurality of gas supply lines that individually supply different kinds of gases. For example, the substrate processing apparatus of the sixth scope of the patent application, in which the aforementioned plurality of gas supply lines are gas with a specific flow rate which is controlled by «control µ fixed supply flow rate. For example, the substrate processing apparatus of the second patent application range, wherein the plurality of gas injection ports are connected to a plurality of gas supply lines that individually supply different kinds of gases. For example, the substrate processing apparatus of the eighth aspect of the patent application, in which the aforementioned plurality of gas supply lines are each a gas supplied with a specific flow rate controlled by a mass flow controller. For example, the substrate processing device for which the scope of the patent application is applied, wherein the exhaust port described in the month J is formed in a rectangular shape wider than the width of the substrate to be processed. For example, please use the substrate processing device of the first scope of the patent, wherein the exhaust port is connected to an exhaust path extending below the bottom of the other side of the processing container. 11.