12367771236777
【發明所屬之技術領域】 本發明係有關於一種聲波共振裝置及其製造方法 【先前技術】 >、習知濾波器元件係已能以微機電製程而大量製作於一 半導體基板（如晶圓），例如薄膜聲波共振器（FBAR，th'in film bulk acoustic resonator)，其係利用壓電薄膜腔 產生聲波共振，依其共振頻率可使特定頻率能量通過或是 截止其它頻率能量，達到控制接收頻率及發射頻率之功 能，而習知薄膜聲波共振器係製作於一半導基板上，以組 成一聲波共振裝置。 ' 我國專利公告第514621號「用以製造薄膜整體聲波共 振器（FBAR)之改良方法及具現此方法之FBAR構造」係揭^ 有幾種習知聲波共振裝置，請參閱第1圖，一種習知之聲 波共振裝置1 00係主要包含有一薄膜聲波共振器丨丨〇 (fbar) 及一如矽基板之半導體基板120，該薄膜聲波共振器U〇係 u又於4半導體基板120之上表面並^ 一上電極ill、一下電 極1 12以及夾設在該上電極丨丨丨與該下電極丨12間之壓電材 料層113所組成，該半導體基板12〇係具有一貫通該上、下 表面之共振腔1 2 1，以懸空該薄膜聲波共振器丨丨〇，此種聲 波共振裝置1 00係可以微機電製成大量製造在一大尺寸之_ 半導體晶圓上，再以一切割刀具切割為複數個個別分離之 半導體基板120，具有製造容易與低成本之優勢，但在晶 圓切割時，受制於該鏤空貫通之共振腔丨2 1，該半導體基 板120在切割成形時，易於引發崩裂（chipping)導致碎片[Technical field to which the invention belongs] The present invention relates to an acoustic wave resonance device and a method for manufacturing the same [prior art] > The conventional filter element system can be manufactured in large quantities on a semiconductor substrate (such as a wafer) by a micro-electromechanical process. ), Such as a thin film acoustic resonator (FBAR), which uses a piezoelectric thin film cavity to generate acoustic resonance. Depending on its resonance frequency, energy of a specific frequency can pass or cut off energy of other frequencies to achieve controlled reception. Frequency and emission frequency functions, and the conventional thin film acoustic wave resonator is made on a half of the conductive substrate to form an acoustic wave resonance device. '' Chinese Patent Bulletin No. 514621 "Improved method for manufacturing thin film bulk acoustic wave resonator (FBAR) and FBAR structure with this method" are disclosed. There are several known acoustic wave resonance devices. Please refer to FIG. The known sonic resonance device 100 series mainly includes a thin film acoustic resonator 丨 丨 (fbar) and a semiconductor substrate 120 like a silicon substrate. The thin film acoustic resonator U0 series u is on the upper surface of the 4 semiconductor substrate 120 and ^ An upper electrode ill, a lower electrode 112, and a piezoelectric material layer 113 sandwiched between the upper electrode 丨 and the lower electrode 丨 12 are formed. The semiconductor substrate 12 has a structure that penetrates the upper and lower surfaces. The resonant cavity 1 2 1 is used to suspend the thin-film acoustic wave resonator. This kind of acoustic wave resonance device 100 can be fabricated in a large amount by micro-electromechanical manufacturing on a large size _ semiconductor wafer, and then cut with a cutting tool to A plurality of individually separated semiconductor substrates 120 have the advantages of being easy to manufacture and low cost. However, when the wafer is diced, they are subject to the hollow cavity 218, when the semiconductor substrate 120 is cut and formed, To crack initiation (chipping) lead to fragmentation
1236777 五、發明說明（2) 之產_生。此外，在黏晶固定該聲波共振裝置1 00以組成 身^頻元件時，黏晶膠容易污染該鏤空之共振腔1 2 1，且 黏著面積有限。 清參閱第2圖，另一種習知之聲波共振裝置2 〇 〇係主要 包含有一薄膜聲波共振器21 〇以及一半導體基板22〇，同樣 地，該薄膜聲波共振器2 1〇係包含有一上電極2U、一下電 極212以及夾設在該上電極2U與該下電極212間之壓電材 料層2 1 3 ’該薄膜聲波共振器2丨〇係設於該半導體基板2 2〇 之一上表面2 2 1且具有複數個蝕刻孔2丨4，然該半導體基板 220之共振腔223係僅形成在該上表面221之一低窪區，而 不貫穿至該半導體基板2 2〇之該下表面222，使得該半導體 基板220有較佳之支撐強度，但在製作上顯得複雜而高成 本，首先以蝕刻方式預先在該半導體基板22〇之上表面221 形成一低窪區，以作為該共振腔223，該低窪區應先填入 犧牲材料（圖未繪出），以填平該半導體基板22〇之上表面 221，再製造該薄膜聲波共振器21〇使其形成在該半導體基 板220之上表面221，該薄膜聲波共振器21〇必須要有貫通 至該低窪區（共振腔223)之蝕刻孔214，以能在後續步驟中 利用蝕刻液通過該蝕刻孔2 1 4，以去除該犧牲材料，故製 程複雜並且該蝕刻孔214與該犧牲材料之形成均會增加成（ 本0 【發明内容】 ,本發明之主要目的係在於提供一種聲波共振裝置，其 係主要包含有一半導體基板、一薄膜聲波共振器（fbar，、 1236777 五、發明說明（3) thin film bulk acoustic resonator)以及一強化板 (reinforcing plate)，該薄膜聲波共振器係設於該半導 體基板^—^表面’且該半導體基板係具有一貫穿該上、下 表面之共振腔，該強化板係設於該半導體基板之下表面， 以密封該共振腔，其係可防止該半導體基板在切割步驟中 產生崩裂，且該強化板係可供黏晶接合，減少該共振腔之 污染。 本發明之次一目的係在於提供一種聲波共振裝置之製 造方法’首先’係將複數個薄膜聲波共振器形成於一半導 體基板之上表面，接著，再對該半導體基板蝕刻形成複數 個貝通上下表面之共振腔，之後，一強化板係設於該半導 體基板之下表面，以密封該共振腔，接著，進行切割步驟 以形成複數個聲波共振裝置，該強化板係可防止該半導體 基板在切割步驟中產生崩裂，且該強化板係可供黏晶接 ^，因此，該半導體基板不需要製作如習知技術所述之 非貫穿低窪共振腔”，並且該薄膜聲波共振器不需要製 作習知之蝕刻孔，亦不需要填入犧牲材料，製程簡單且具 有低成本與實用之功效。 〃 本發明之聲波共振裝置，主要包含有一半導體基板、 一薄膜聲波共振器（FBAR)以及一強化板（reinf〇rcing1236777 V. Description of Invention (2) In addition, when the acoustic resonance device 100 is fixed by a viscous crystal to form a body frequency component, the viscous crystal easily contaminates the hollow resonance cavity 1 2 1, and the adhesion area is limited. Refer to FIG. 2. Another conventional acoustic wave resonance device 200 series mainly includes a thin film acoustic resonator 21 0 and a semiconductor substrate 22 0. Similarly, the thin film acoustic wave resonator 2 10 series includes an upper electrode 2U. The lower electrode 212 and the piezoelectric material layer 2 1 3 'sandwiched between the upper electrode 2U and the lower electrode 212. The thin film acoustic wave resonator 2 is provided on one of the upper surfaces 2 2 of the semiconductor substrate 2 2 1 and has a plurality of etched holes 2 丨 4, but the resonant cavity 223 of the semiconductor substrate 220 is formed only in a low-lying area of the upper surface 221, and does not penetrate to the lower surface 222 of the semiconductor substrate 2 20, so that The semiconductor substrate 220 has better support strength, but it is complicated and expensive to manufacture. First, a low-lying region is formed in advance on the upper surface 221 of the semiconductor substrate 22 by etching, as the resonant cavity 223, the low-lying region. A sacrificial material (not shown) should be filled in first to fill the upper surface 221 of the semiconductor substrate 22 and then manufacture the thin film acoustic wave resonator 21 to form it on the upper surface 221 of the semiconductor substrate 220. The The thin film acoustic wave resonator 21 must have an etching hole 214 penetrating to the low-lying area (resonant cavity 223), so that the etching solution can be passed through the etching hole 2 1 4 in the subsequent steps to remove the sacrificial material, so the manufacturing process is complicated In addition, the formation of the etched hole 214 and the sacrificial material will increase. [Abstract] The main purpose of the present invention is to provide an acoustic wave resonance device, which mainly includes a semiconductor substrate and a thin film acoustic wave resonator ( fbar, 1236777 V. Description of the invention (3) thin film bulk acoustic resonator) and a reinforcing plate, the thin film acoustic wave resonator is provided on the surface of the semiconductor substrate ^-^ and the semiconductor substrate has a through The reinforcing cavity on the upper and lower surfaces is provided on the lower surface of the semiconductor substrate to seal the resonant cavity, which can prevent the semiconductor substrate from cracking during the cutting step, and the reinforcing plate is available for bonding. Crystal bonding to reduce the contamination of the resonant cavity. A second object of the present invention is to provide a method for manufacturing an acoustic resonance device 'first' A plurality of thin film acoustic wave resonators are formed on the upper surface of a semiconductor substrate, and then the semiconductor substrate is etched to form a plurality of resonance chambers on the upper and lower surfaces of Beton. After that, a reinforcing plate is provided on the lower surface of the semiconductor substrate, The resonant cavity is sealed, and then a dicing step is performed to form a plurality of acoustic wave resonance devices. The reinforcing plate system can prevent the semiconductor substrate from cracking during the cutting step, and the reinforcing plate system can be used for bonding bonding. Therefore, the semiconductor The substrate does not need to be made of a non-penetrating low-lying resonant cavity as described in the conventional technology ", and the thin-film acoustic wave resonator does not need to make the conventional etched hole, and does not need to be filled with a sacrificial material. .声 The acoustic resonance device of the present invention mainly includes a semiconductor substrate, a thin-film acoustic resonator (FBAR), and a reinforcement board
Plate)，該半導體基板係具有一上表面、一下表面以及一 共振腔，其中該共振腔係貫通該上表面與該下表面，該薄 膜聲波共振器係設於該半導體基板之該上表面，該強化板 係設於該半導體基板之該下表面，以密封該共振腔。Plate), the semiconductor substrate has an upper surface, a lower surface, and a resonant cavity, wherein the resonant cavity penetrates the upper surface and the lower surface, and the thin film acoustic wave resonator is disposed on the upper surface of the semiconductor substrate, the A reinforcing plate is disposed on the lower surface of the semiconductor substrate to seal the resonant cavity.
1236777_ 五、發明說明（4) " 〜η 【實施方式】 參閱所附圖式，本發明將列舉以下之實施例說明。. 依本發明之一具體實施例，請參閱第3圖，一種聲波 共振裝置300係主要包含有一半導體基板3】〇、一薄骐聲波 共振器320(FBAR)以及一強化板330(reinforcing plate)，該半導體基板3 1〇係具有一上表面311、一下表面 312以及一共振腔313，該半導體基板310之材質可為矽， 其中該共振腔313係貫通該上表面31 1與該下表面312，在 製造上’該共振腔3 1 3之成形順序係在形成該薄膜聲波共 振器3 2 0之後，在本實施例中，該共振腔3丨3在該下表面 31 2之孔徑係大於其在該上表面3 11之孔徑，以構成一下共· 振腔的結構，並且，在該半導體基板31〇之上表面311係形· 成有一氮化矽層3 1 4，作為蝕刻停止層。 a亥薄膜聲波共振器3 2 0係設於該半導體基板31 〇之該上 表面31 1，該薄膜聲波共振器320係包含有一上電極321、 一下電極3 2 2以及夾設在該上電極3 2 1與該下電極3 2 2間之 壓電材料層323，該上電極321與該下電極321係可為鋁、 銅、白金（Pt)、金或鉬材質，該壓電材料層323係可選自 於il化銘、氧化鋅或其它壓電材料（piezoelectric material) 。 · 該強化板33 0係設於該半導體基板310之該下表面 312，以密封該共振腔313，該強化板330之硬度應不小於 該半導體基板31 0之硬度，該強化板330係可選自於陶瓷 板、矽基板或玻璃基板之其中之一，較佳地，在該半導體1236777_ 5. Description of the invention (4) " ~ η [Embodiment] Referring to the attached drawings, the present invention will enumerate the following embodiment descriptions. According to a specific embodiment of the present invention, please refer to FIG. 3, a sound wave resonance device 300 mainly includes a semiconductor substrate 3], a thin chirped sound wave resonator 320 (FBAR), and a reinforcing plate 330 (reinforcing plate). The semiconductor substrate 3 10 has an upper surface 311, a lower surface 312, and a resonant cavity 313. The material of the semiconductor substrate 310 may be silicon. The resonant cavity 313 penetrates the upper surface 31 1 and the lower surface 312. In manufacturing, the forming sequence of the resonant cavity 3 1 3 is after the thin film acoustic resonator 3 2 0 is formed. In this embodiment, the aperture of the resonant cavity 3 丨 3 on the lower surface 31 2 is larger than that. A hole in the upper surface 3 11 constitutes a common cavity structure, and a silicon nitride layer 3 1 4 is formed and formed on the upper surface 311 of the semiconductor substrate 31 as an etching stop layer. The thin film acoustic wave resonator 3 2 0 is provided on the upper surface 31 1 of the semiconductor substrate 31 〇, and the thin film acoustic wave resonator 320 includes an upper electrode 321, a lower electrode 3 2 2 and an upper electrode 3 sandwiched therebetween. A piezoelectric material layer 323 between 2 1 and the lower electrode 3 2 2. The upper electrode 321 and the lower electrode 321 may be made of aluminum, copper, platinum (Pt), gold or molybdenum. The piezoelectric material layer 323 is It can be selected from illuminating zinc, zinc oxide or other piezoelectric materials. · The strengthening plate 330 is provided on the lower surface 312 of the semiconductor substrate 310 to seal the resonance cavity 313. The hardness of the strengthening plate 330 should be not less than the hardness of the semiconductor substrate 310. The strengthening plate 330 is optional From one of a ceramic plate, a silicon substrate, or a glass substrate, preferably, the semiconductor
第10頁 1236777Page 10 1236777
基板31 0之下表面3 12與該強化板330之間係形成有一界面 層331，如鉻層，以增進該強化板33〇與該半導體基板^ μ > 上述之該聲波共振裝置3〇〇，係利用該強化板3 30設於 該半導體基板310之該下表面312，以達到密封該貫通朝下 型之共振腔3 1 3，且在晶圓切割該半導體基板3 i 〇時，以該 強化板3 3 0作為切割之最終斷離層，使該半導體基板3丨〇不 會發生崩裂之問題，並且該強化板3 3〇可作為整個聲波共 振裝置3 0 0之底板，以黏晶連接於一外部基板（圖未繪 出）不但使得忒聲波共振裝置3 0 0具有較大之黏晶面積並 且不會污染到該共振腔3 1 3。 、 該聲波共振裝置300之製造方法說明如後，請參閱第 4A圖，首先，提供至少一半導體基板3 1〇，該半導體基板 310係具有一上表面311及一下表面312，複數個半導體基 板310係構成於一半導體晶圓；之後，請參閱第4β圖，利 用微機電製程之沉積技術將一薄膜聲波共振器3 2 〇之一上 電極321、一下電極322與一壓電材料層323製作於該半導 體基板310之該上表面31 1 ;之後，請參閱第4C圖，以濕蝕 刻（wet etching)或乾鍅刻（dry etching)方式形成該半導 體基板3 1 Q之共振腔3 1 3，該共振腔3 1 3係由該半導體基板〇 310之下表面312触刻成形，且貫通該半導體基板31 〇之該 上表面311與該下表面312 ;之後，請參閱第4D圖，將一強 化板33 0設置於該半導體基板31〇之該下表面312，以密封 該共振腔3 1 3，而上述之步驟係可運用微機電製程在一半An interface layer 331, such as a chromium layer, is formed between the lower surface 3 12 of the substrate 31 0 and the reinforcing plate 330 to enhance the reinforcing plate 33 〇 and the semiconductor substrate ^ > The acoustic resonance device 300 described above. It is to use the reinforced plate 3 30 provided on the lower surface 312 of the semiconductor substrate 310 to seal the through-resonant cavity 3 1 3, and when the semiconductor substrate 3 i 0 is cut by the wafer, the The reinforced plate 3 3 0 is used as the final separation layer for cutting, so that the semiconductor substrate 3 丨 will not be broken, and the reinforced plate 3 3 0 can be used as the bottom plate of the entire acoustic resonance device 3 0 0, which is connected by sticky crystals. An external substrate (not shown) not only causes the chirped acoustic wave resonance device 300 to have a large area of crystallites but also does not contaminate the resonance cavity 3 1 3. The manufacturing method of the acoustic resonance device 300 will be described later. Please refer to FIG. 4A. First, at least one semiconductor substrate 3 10 is provided. The semiconductor substrate 310 has an upper surface 311 and a lower surface 312, and a plurality of semiconductor substrates 310. It is constituted on a semiconductor wafer. After that, referring to FIG. 4β, the upper electrode 321, the lower electrode 322, and a piezoelectric material layer 323 of a thin film acoustic wave resonator 3 2 0 are fabricated on a thin-film acoustic wave resonator 3 2 0 by using a deposition technique of a microelectromechanical process. After the upper surface 31 1 of the semiconductor substrate 310 is described, referring to FIG. 4C, a resonant cavity 3 1 3 of the semiconductor substrate 3 1 Q is formed by wet etching or dry etching. The resonant cavity 3 1 3 is formed by touching the lower surface 312 of the semiconductor substrate 0310, and penetrates the upper surface 311 and the lower surface 312 of the semiconductor substrate 31. Then, referring to FIG. 4D, a reinforcing plate is formed. 33 0 is disposed on the lower surface 312 of the semiconductor substrate 31 to seal the resonant cavity 3 1 3, and the above steps can be performed in half using a micro-electromechanical process.
第11頁 1236777 五、發明說明（6) 導體晶圓上據以實施，之後，再執行—切割步驟，在本實 施例中係以一切割刀具10切割斷離該半導體晶圓及該強化 板33匕，以形成複數個如第3圖所示之聲波共振裝置3〇〇， $於該聲波共振裝置3〇〇最後被切割斷離層係為該強化板 田七幻因此可增強該半導體基板3 1 0之結構強度，且可避免 因切割而使該半導體基板31 0有崩裂之門題。 避免 本月之保護範圍當視後附之申請專利範 為皁任何熟知此項技藝者，在不脫離太恭日H夕心疋者 圍内所作之任何變化與修改，均 ^月之精砷和範 ^Ί屬於本發明之保護範圍。 1236777 圖式簡單說明 【圖式簡單說明】 第 1 圖 • _ "一 圖， 第 2 圖 ••另 意圖； 第 3 圖 :依 置之截 面示 意圖 第4A至4D圖 :依 圖··一種習知薄膜聲波共振器（FBAR)之截面示意 圖·另一種習知薄膜聲波共振器（FBAR)之截面示 置在晶圓級製程之戴面示意圖 元件符號簡單說明： ίο 切割刀具 100 聲波共振裝置 110 薄膜聲波共振 器 111 上電極 112 下電極 113 壓電材料層 120 半導體基板 121 共振腔 122 碎片 200 聲波共振裝置 210 薄膜聲波共振器 211 上電極 212 下電極 213 壓電材料層 214 餘刻孔 220 半導體基板 221 上表面 222 下表面 223 共振腔 300 聲波共振裝置 310 半導體基板 311 上表面 312 下表面 313 共振腔 314 氮化矽層 320薄膜聲波共振器 钃丨Page 11 1236777 V. Description of the invention (6) It is implemented on the conductor wafer, and then the cutting step is performed. In this embodiment, the semiconductor wafer and the reinforcing plate 33 are cut and separated by a cutting tool 10 To form a plurality of sonic resonance devices 300 as shown in FIG. 3, and finally the sonic resonance device 300 is cut and separated to form the reinforced Itada Seven Magics so that the semiconductor substrate 3 can be enhanced It has a structural strength of 10, and can avoid the problem that the semiconductor substrate 3 1 is cracked due to cutting. To avoid the scope of this month's protection, consider the attached patent application as a soap. Any changes and modifications made by those who are familiar with this technology without departing from the princely condolence will be the essence of the month. ^ Ί belongs to the protection scope of the present invention. 1236777 Schematic illustration [Schematic illustration] Picture 1 _ " a picture, picture 2 • other intentions; picture 3: schematic diagram of the cross section of the drawing picture 4A to 4D: picture A cross-sectional view of a known thin-film acoustic wave resonator (FBAR). A cross-section of another conventional thin-film acoustic wave resonator (FBAR) is shown in a wafer-level process. The symbol of the component is simply explained. Ίο Cutting tool 100 Acoustic resonance device 110 Thin film Acoustic resonator 111 Upper electrode 112 Lower electrode 113 Piezoelectric material layer 120 Semiconductor substrate 121 Resonant cavity 122 Fragment 200 Acoustic resonance device 210 Thin film acoustic resonator 211 Upper electrode 212 Lower electrode 213 Piezoelectric material layer 214 Recessed hole 220 Semiconductor substrate 221 Upper surface 222 Lower surface 223 Resonant cavity 300 Acoustic resonance device 310 Semiconductor substrate 311 Upper surface 312 Lower surface 313 Resonant cavity 314 Silicon nitride layer 320 Thin film acoustic resonator 钃 丨
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