1236161 狄、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體及其製程，特別是可 發出紫外光（uv)及/或藍光之發光二極體，以及其製作 過程。 【先前技術】 人類文明因科學發展而突飛猛進，各項發明不勝牧 舉，不但推動世界經濟繁榮，也帶來人類生活之舒適、方 便與富裕’發光二極體即為眾多發明中的其中一項。 參閱圖1所示，一般以氮化鎵系列之發光二極體1， 為顧及磊晶成長的品質，是以一例如藍寶石（sapphire)為 材質的磊晶基材（Substrate)ll，在其上磊晶成長而成一以 導電型氮化鎵化合物（Gallium nitride-based compound semiconductors)為材料的發光單元12。 邊發光單元12包含一形成在該磊晶基材丨丨上的η型 披覆層121(n_claddinglayer)、一形成於該η型彼覆層121 上的活性發光層 122(Active light-emitting layer)、一形成 於該活性發光層122上的p型披覆層123 (p_cladding layer)、一形成於該p型披覆層123上的透明導電層124、 一形成於該透明導電層14上且與p型披覆層123形成歐姆 接觸的p型歐姆電極125，及一與該n型彼覆層123形成 歐姆接觸之η型歐姆電極126。 當對該發光單元12施以適當之電壓時，電流從ρ型 歐姆電極125、經過透明導電層丨24均勻擴散，再經過ρ 1236161 5 10 15 層123、活性發光層122、n型披覆層m，最後至 n型歐姆電極126,且，當電流穿過介於η型披覆層121 及Ρ型披覆層123之活性發光層122時，電子電洞覆人， 使電子躍遷至㈣階㈣生多數光子，^對外輸出⑽。 上述發光二極^確實可產生光線，並因省電、驅動 低、反應快發光賴率高等等優點，而廣為應用於顯 不幕、交通號誌等等曰常生活中。 然而，對氮化錄系列之發光二極體而言，氮化鎵㈣ 晶生長必須制藍寳石作為蟲晶基材，方可得到高品質的 蟲晶薄膜，但同時’藍寶石基材的散熱性卻不佳，以至於 限制上述發光二極體的發光功率，以及應用範圍。特別是 針對當前發光二極體必須往大面積、高功率的應用而言， 如何可以同時得到高品質 的蠢日0_ ’又同時可兼顧蠢晶 基材的散熱性，以製作出大面積、高功率的發光二極體， 疋業者與學界積極研究發展的課題之一。 【發明内容】 因此，本發明之目的，即在提供一種具有散熱基板的 發光二極體及其製程’以製作出大面積、高功率的發光二 極體。 本發明之一種具有散熱基板之發光二極體，包含一基 板、一與該基板相連結且可反射光之反射鏡、一與該反射 鏡相連結之磊晶基材，及一可產生光的發光單元。 該發光單兀至少具有一形成於該磊晶基材的〇型彼覆 層、一形成於該η型披覆層上的活性發光層、一形成於該 20 1236161 活性發光層上的P型披覆層、一設置於該η型披覆層上的 η型歐姆電極’及一設置於該ρ型披覆層上的ρ型歐姆電 極’當施加一電壓於該ρ、η型歐姆電極後，該活性發光層 產生複數光子使該發光單元向外輸出光，且該反射鏡將該 發光單元向該散熱基板方向輸出的光反射而向外輸出。 此外’本發明之一種具有散熱基板之發光二極體的製 程，包含下列步驟： (a )於一磊晶基材上形成一施加電壓後可產生光的發 光單元’該發光單元具有一自該磊晶基材向上形成之η型 披覆層、一形成於該η型披覆層上的活性發光層、一形成 於該活性發光層上的ρ型彼覆層、一設置於該η型披覆層 上的η型歐姆電極，及一設置於該ρ型披覆層上的ρ型歐 姆電極。 (b)將一暫時基板黏貼於該發光單元上。 (c )自該磊晶基材之相反於形成該發光單元之一底 面’向該暫時基板方向移除一預定厚度，使該磊晶基材薄 化。 (d) 自該薄化後的蠢晶基材上形成一可反射光的反 射鏡。 (e) 自該反射鏡上形成一可傳導熱的散熱基板。 (f) 移除該暫時基板。 又’本發明之另一種具有散熱基板之發光二極體的製 程，包含下列步驟： (a )於一磊晶基材上形成一施加電壓後可產生光的發 1236161 光單元，該發光單元具有一自該磊晶基材向上形成之η型 披覆層、一形成於該η型披覆層上的活性發光層、一形成 於該活性發光層上的ρ型披覆層、一設置於該η型披覆層 上的η型歐姆電極，及一設置於該ρ型披覆層上的ρ型歐 5 姆電極。 (b)將一暫時基板黏貼於該發光單元上。 (c )自該磊晶基材之相反於形成該發光單元之一底 面’向該暫時基板方向移除一預定厚度，使該磊晶基材薄 化。 (d)自一可傳導熱的散熱基板上形成一可反射光的 反射鏡。 (e )將該反射鏡與該薄化後的磊晶基材相貼合。 (f)移除該暫時基板。 本發明之功效在於提供一種薄化磊晶基材後再低溫 15 貼合散熱基板的製程，以製造出大面積、高功率的發光二 極體。 【實施方式】 有關本發明之别述及其他技術内容、特點與功效，在 以下配合參考圖式之四較佳實施例的詳細說明中，將可清 20 楚的明白。 參閱圖2所示，本發明具有散熱基板之發光二極體之 一第-較佳實施例’是以如圖3所示本發明具有散熱基板 之發光二極體的製程的一第一較佳實施例所製作，今相互 配合詳述如下。 1236161 參閱圖3所示，首先進行步驟31，與習知之氮化鎵系 列的發光二極體相似’選用一例如藍寶石（sapphire )為 材質的磊晶基材21，並以導電型氮化鎵化合物為材料，於 該蠢晶基材21上依序蠢晶向上形成一 η型披覆層231、活 性發光層232，及一 ρ型披覆層233 ;再將該ρ型彼覆層 233、活性發光層232，及部份該η型彼覆層231之一側# 刻移除，使得該η型彼覆層23 1部分區域裸露；最後於該 Ρ型彼覆層233形成與ρ型披覆層233歐姆接觸之ρ型歐 姆電極234，並在該η型彼覆層231部分裸露之區域形成 一與該η型披覆層231形成歐姆接觸的η型歐姆電極235, 完成如圖2所示之一包含該η型彼覆層231、活性發光層 232、ρ型披覆層233、ρ型歐姆電極234，及η型歐姆電 極235之發光單元23的製備。 為付到良好的蟲晶品質’上述蠢晶基材21除了藍寶 石之外，亦可選用例如磷化鎵、砷化鎵、氧化鋅等作為磊 晶基材。 接著進行圖3所示之步驟32,選用例如玻璃為一暫時 基板’並利用例如蠛、SOG ( spin-on -glass )、光阻、有機 材料等將該暫時基板與該ρ型披覆層233相黏貼成一體。 然後進行步驟33，以化學機械研磨（CMP ;1236161 D. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a light-emitting diode and a process therefor, particularly a light-emitting diode capable of emitting ultraviolet (UV) and / or blue light, and a manufacturing process thereof . [Previous technology] Human civilization is advancing rapidly due to scientific development. The inventions are numerous and will not only promote the prosperity of the world economy, but also bring comfort, convenience and prosperity to human life. 'Light-emitting diodes are one of many inventions. . Referring to FIG. 1, in general, a light-emitting diode 1 of a gallium nitride series, in order to take into account the quality of epitaxial growth, an epitaxial substrate (Substrate) 11 made of, for example, sapphire is used as a material. The epitaxy grows into a light-emitting unit 12 using Gallium nitride-based compound semiconductors as a material. The edge light emitting unit 12 includes an n-cladding layer 121 (n_claddinglayer) formed on the epitaxial substrate, and an active light-emitting layer 122 (active light-emitting layer) formed on the n-cladding layer 121. A p-cladding layer 123 formed on the active light-emitting layer 122, a transparent conductive layer 124 formed on the p-type cladding layer 123, and a transparent conductive layer 14 formed on the transparent conductive layer 14 and The p-type cladding layer 123 forms a p-type ohmic electrode 125 in ohmic contact, and an n-type ohmic electrode 126 in ohmic contact with the n-type other cladding layer 123. When an appropriate voltage is applied to the light-emitting unit 12, the current is uniformly diffused from the ρ-type ohmic electrode 125 through the transparent conductive layer 丨 24, and then passes through the ρ 1236161 5 10 15 layer 123, the active light-emitting layer 122, and the n-type cladding layer. m, finally to the n-type ohmic electrode 126, and when the current passes through the active light-emitting layer 122 between the n-type cladding layer 121 and the p-type cladding layer 123, the electron hole covers the person, so that the electron transitions to the second order Most photons are generated, and ⑽ outputs ⑽ to the outside. The above-mentioned light-emitting diodes can indeed generate light, and are widely used in daily life such as displays, traffic signs, etc. due to the advantages of power saving, low driving, fast response and high light-emitting rate. However, for the light-emitting diodes of the Nitride series, the growth of gallium nitride gadolinium crystals must be made of sapphire as the worm crystal substrate to obtain high-quality worm crystal films, but at the same time, the heat dissipation of the sapphire substrate However, it is not good enough to limit the light emitting power of the light emitting diode and the application range. Especially for the application that the current light-emitting diode must be large area and high power, how can we get high-quality stupid light at the same time, while taking into account the heat dissipation of the stupid crystal substrate, so as to make a large area, high-power Power light-emitting diodes, one of the topics actively researched and developed by industry and academia. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a light-emitting diode with a heat-dissipating substrate and a process thereof 'to produce a large-area, high-power light-emitting diode. A light-emitting diode with a heat-dissipating substrate according to the present invention includes a substrate, a reflecting mirror connected to the substrate and reflecting light, an epitaxial substrate connected to the reflecting mirror, and a light-emitting diode Lighting unit. The light-emitting unit has at least one O-type coating layer formed on the epitaxial substrate, an active light-emitting layer formed on the n-type coating layer, and a P-type coating formed on the 20 1236161 active light-emitting layer. A cladding layer, an n-type ohmic electrode 'disposed on the n-type cladding layer, and a p-type ohmic electrode' disposed on the p-type cladding layer, when a voltage is applied to the ρ, n-type ohmic electrode, The active light-emitting layer generates a plurality of photons to cause the light-emitting unit to output light outward, and the reflector reflects the light output from the light-emitting unit toward the heat-dissipating substrate and outputs the light outward. In addition, a process of a light-emitting diode with a heat-dissipating substrate of the present invention includes the following steps: (a) forming a light-emitting unit that can generate light upon application of a voltage on an epitaxial substrate; the light-emitting unit has a An n-type coating layer formed on the epitaxial substrate upward, an active light-emitting layer formed on the n-type coating layer, a p-type coating layer formed on the active light-emitting layer, and an n-type coating layer An n-type ohmic electrode on the cladding layer and a p-type ohmic electrode disposed on the p-type cladding layer. (b) Adhere a temporary substrate to the light-emitting unit. (c) removing a predetermined thickness from the bottom surface of the epitaxial substrate opposite to the one where the light-emitting unit is formed toward the temporary substrate, so that the epitaxial substrate is thinned. (d) forming a reflecting mirror from the thinned stupid substrate. (e) A heat-radiating substrate capable of conducting heat is formed from the reflector. (f) Remove the temporary substrate. According to another aspect of the present invention, another manufacturing process of a light-emitting diode with a heat-dissipating substrate includes the following steps: (a) forming an epitaxial substrate on an epitaxial substrate which can generate light upon application of a voltage and emits light 1236161, and the light-emitting unit has An n-type coating layer formed upward from the epitaxial substrate, an active light-emitting layer formed on the n-type coating layer, a p-type coating layer formed on the active light-emitting layer, and an An n-type ohmic electrode on the n-type cladding layer, and a p-type ohmic electrode disposed on the p-type cladding layer. (b) Adhere a temporary substrate to the light-emitting unit. (c) removing a predetermined thickness from the bottom surface of the epitaxial substrate opposite to the one where the light-emitting unit is formed toward the temporary substrate, so that the epitaxial substrate is thinned. (d) forming a reflector capable of reflecting light from a heat-radiating substrate which can conduct heat. (e) bonding the reflector to the thinned epitaxial substrate. (f) Remove the temporary substrate. The effect of the present invention is to provide a process of laminating the epitaxial substrate and then bonding the heat dissipation substrate at a low temperature to manufacture a large-area, high-power light-emitting diode. [Embodiment] The other descriptions of the present invention and other technical contents, features, and effects will be clearly understood in the following detailed description of the fourth preferred embodiment with reference to the drawings. Referring to FIG. 2, a first preferred embodiment of the light-emitting diode with a heat-dissipating substrate according to the present invention is a first preferred method of manufacturing the light-emitting diode with a heat-dissipating substrate according to the present invention as shown in FIG. 3. The production of the examples and the mutual cooperation are detailed as follows. 1236161 As shown in FIG. 3, step 31 is performed first, similar to the conventional GaN series light-emitting diodes. 'An epitaxial substrate 21 such as sapphire is selected, and a conductive gallium nitride compound is used. As a material, an n-type coating layer 231, an active light-emitting layer 232, and a p-type coating layer 233 are sequentially formed on the stupid substrate 21 in order. The light-emitting layer 232 and a part of one side of the n-type coating layer 231 are removed, so that a part of the n-type coating layer 23 is exposed; finally, a p-type coating is formed on the p-type coating layer 233. P-type ohmic electrode 234 in ohmic contact with layer 233, and an n-type ohmic electrode 235 in ohmic contact with the n-type cladding layer 231 is formed in a partially exposed area of the n-type cladding layer 231, as shown in FIG. 2 One is the preparation of the light-emitting unit 23 of the n-type cladding layer 231, the active light-emitting layer 232, the p-type cladding layer 233, the p-type ohmic electrode 234, and the n-type ohmic electrode 235. In order to provide good insect crystal quality, the above-mentioned stupid crystal substrate 21 may be selected from epitaxial substrates other than sapphire, such as gallium phosphide, gallium arsenide, and zinc oxide. Then, step 32 shown in FIG. 3 is performed. For example, glass is used as a temporary substrate, and the temporary substrate and the p-type cladding layer 233 are used, for example, thorium, SOG (spin-on-glass), photoresist, organic materials, and the like. Stick together. Then proceed to step 33 to chemical mechanical polishing (CMP;
Chemical-Mechanical Polishing)方式使該磊晶基材 21 薄 至50 // m以下。 該步驟33亦可先以一般研磨方式使該磊晶基材21薄 化至預定厚度’例如80至120 // m之後，再以感應式輕合 1236161 電聚鍅刻（ICP ; Inductively Coupled Plasma)乾蝕刻方式 將該蠢晶基材21薄至5〇# m以下，由於此種薄化方式眾 多’在此不多加--舉例說明。 接著進行步驟34，在該薄化後之磊晶基材21上形成 一可反射光之反射鏡22。在本例中，是以例如金（Au)、 銀（Ag)、翻（Pt)、鋁（A1)、鎳（Ni)、銅（Cu)、鈦（、 纽（Ta)、鉻（Cr)、鈀（pd)、鎢（w)、鉬（Mo)等金屬 或其合金為材料，應用物理鍍膜形成一金屬反射鏡。 此外’也可以利用介電材料形成介電反射鏡，該介電 反射鏡具有複數介電反射單元，每一介電反射單元包含二 分別具有不同折射率之介電層，且該較遠離該磊晶基材21 之介電層的折射率是小於相對靠近該磊晶基材21之介電 層的折射率；而該介電層的材料可以選自例如硒化鋅 (ZnSe)、氟化鎂（MgF2)、氧化矽（Si〇2)、矽（^)、氮 化矽（Si3N4)、氧化鈦（Ti〇2)、氧化鈕（Ta2〇5)、氧化铪 jHfO2)、氧化結（Zr〇2)等，以例如硒化辞與氟化鎂、 氧化;ε夕與碎、氮化矽與矽、氧化鈦與矽、氧化鈕與矽、氧 化給與氧切、氧㈣與氧切、氧㈣與氧切、氧化 鈇與氧化石夕等相互搭配，分別組成其中_包含二介電層 介電反射單元。 θ 、 崔再進行步驟3 5，選用具有高散熱率例如銅、金、錄、 二、銀等金屬或其合金所構成的金屬基板，或是例如矽義 、碟化鎵等非金屬基板作為一散熱基板24，利用例如^ ”膠、蠟、不導電膠、溶質凝膠玻璃（s〇1_gel Si〇”、高 10 1236161 分子材料、光阻、低炼點之合金等作為黏合劑25，將該反 射鏡22與該薄化後的磊晶基材21相貼合成一體。 最後進行步驟36,利用例如_、研磨等方式移除該 暫時基板’即完成如圖2所示，本發明具有散熱基板之發 5 光二極體26之第一較佳實施例的成品。 此外，步驟35亦可以電鍍方式於該反射鏡上直接形 f整面的散熱基板；或先以光阻於該反射鏡22上形成預 疋態樣，且使該反射冑22冑份區域對應該光阻所形成之 態樣裸露，再選用例如銅、金、錄、銘、銀、翻、鎢等金 1〇 ^或合金為材料’再自該反射鏡22之裸露的部份區域電 鍍形成该散熱基板24，然後再移除光阻，使形成之散熱基 板24具有預定態樣。由於此等細節變化方式眾多，在此 不多加舉例詳述。 參閱圖2所*，以上述製程所製成之具有散熱基板之 15 發光二極體2，包含具有高散熱率的散熱基板24、黏合劑 25、反射鏡22、厚度小於5〇#m以下的磊晶基材21，及 蟲晶形成於該磊晶基材21上的發光單元23。 反射鏡22與散熱基板24是以黏合劑25連結成一體。 發光單元23依序包含形成於磊晶基材21上的^型彼覆層 10 231、形成於η型披覆層231上的活性發光層232、形成於 活性發光層232上的ρ型披覆層233、與^型披覆層231 形成歐姆接觸之η型歐姆電極235，及與ρ型披覆層233 形成歐姆接觸之ρ型歐姆電極234。 當施加一電壓於上述具有散熱基板之發光二極體2之 11 1236161 p、η型歐姆電極234、235後，電流從p型歐姆電極234、 經過P型披覆層233、活性發光層232、n型披覆層231， 最後至η型歐姆電極235;當電流穿過活性發光層232時， 電子電洞覆合而產生多數光子，且該反射鏡可反射向散熱 5 基板24方向輸出的光，使大部分產生的光均以相反於散 熱基板24方向向外輸出光線；同時，由於磊晶基材21薄 化至50//m以下，並配合具有高散熱率的散熱基板24， 使得熱可迅速導離發光二極體2本身，進而可提高發光二 極體2本身之發光功率、製作更大面積的發光二極體。 _ 1〇 參閱圖4所示，本發明具有散熱基板之發光二極體之 -第二較佳實_ ’是以如圖5所示本發明具有散熱基板 之發光一極體的製程5的一第二較佳實施例所製作，今相 互配合詳述如下。 參閱圖5所示，首先進行步驟51，與上例步驟31相 15 似，選用一例如藍寶石為材質的磊晶基材21，，並以導電 型氮化鎵化合物為材料，於該磊晶基材21，上依序磊晶向-上形成一 n型披覆層231，、活性發光層232,，及- p型彼籲 覆層233 ,再將该P型披覆層233,、活性發光層232,，及 邛伤忒η型披覆層23丨，之一側蝕刻移除，使得該n型彼覆 2〇 ^ 231部分區域裸露；最後於該Ρ型披覆層233,形成與ρ 型披覆層233’歐姆接觸之Ρ型歐姆電極234’，且在該η型 覆層231 σ卩分裸露之區域形成一與該〇型披覆層ρ 形成歐姆接觸的η型歐姆電極235，，完成如圖4所示之-匕S 口亥η型披覆層231，、活性發光層232,、ρ型彼覆層 12 1236161 及11型歐姆電極235,之發光單 233’ ' p型歐姆電極234, 元23’的製備。 5 10 15 20 ，上述蠢晶基材21，除了藍寶石之外，亦可選用例 如^化鎵、坤化鎵、氧化鋅等作為使用材料。 接著進行步驟52，選用例如玻璃為—暫時基板，並利 用例々蟻SQG、光阻、有機材料等將該暫時基板與該ρ 型披覆層233,相黏貼成一體。 然後進行步驟53,以化學機械研磨方式使該蟲晶基材 21，薄至50/ζηι以下。 步驟53亦可先以一般研磨方式使該蟲晶基材21，薄化 至預疋厚度’例如8〇 i 12〇#m之後’再以感應式柄合電 浆餘刻乾餘刻方式將該磊晶基材21薄至5〇//m以下，由 於此種薄化方式眾多，在此不多加一一舉例說明。 接著進行步驟54,選用具有高散熱率例如銅、金、鎳、 銘、銀等金屬或其合金所構成的金屬基板，或是例如矽基 材、碟化鎵等非金屬基板作為散熱基板24,，並在該散熱 基板24’上形成可反射光之反射鏡22，。在本例中，是以例 如金、銀、鉑、鋁、鎳、銅、鈦、组、鉻、把、鶴、鉬等 金屬或其合金為材料，應用物理鍍膜形成一金屬反射鏡。 此外’也可以利用介電材料形成介電反射鏡，該介電 反射鏡具有複數介電反射單元，每一介電反射單元包含二 分別具有不同折射率之介電層，且該較遠離該散熱基板 24’之介電層的折射率是小於相對靠近該散熱基板24，之介 電層的折射率；而該介電層的材料可以選自例如硒化鋅、 13 1236161 亂化鎖、氧化石夕、石夕、氮化石夕、氧化欽 片 氧化參I 、； y 匕名一、氧化給、 與氟化鎂、氧化·氮切 域財、氧化、氧聽與氧切、氧化 5 10 15 t與乳化矽、氧化鍅與氧化 配，八1 乳化鈦與巩化矽等相互搭 刀別組成其中一包含二介電層的介電反射單元。 、疑脉::行步驟55,選用例如透明膠、不吸光之蠛、溶質 , 兩分子材料、綠等透光材料作為黏合劑25，， 將該反射鏡22’與該薄化後的蟲晶基材。，相貼合成一體。 最後進行步驟56,利用例如㈣、研磨等方式移除該 暫時基板’即完成如圖4所示，本發明具有散熱基板之發 光二極體4之第二較佳實施例的成品。 第-&佳實施例’是以如圖5所示本發明具有散熱基板之 發光二極體的製程的一第二較佳實施例所製作出來，因其 構造與上述圖2所示之本發明具有散熱基板之發光二極體 2相似，其差異僅在於製程中反射鏡是先形成於薄化後的 磊晶基板上再貼合散熱基板，或是反射鏡先形成於散熱基 參閱圖4所示，本發明具有散熱基板之發光二極體之 板上，再與薄化後的磊晶基板相貼合的製程順序而已，而 製備完成的具有散熱基板之發光二極體2、4也大致相似， 故不再--詳細說明。 參閱圖6所示，本發明具有散熱基板之發光二極體之 一第三較佳實施例，與上述具有散熱基板之發光二極體2 相似’其相異之處僅在於本例所述之具有散熱基板之發光 二極體6的發光單元61，更包含一以透明且可導電之材 20 1236161 料’例如薄錄-金鑛膜、銦錫氧化物，在p型披覆層233 上形成-透明導電層61卜該透明導電層6ιι可在不影響 發光效率的條件下使電流擴散均勻，增加該具有散熱基板 之發光二極體6的發光功率。 5 ❿製備該具有散熱基板之發光二極體6的製程亦與該 具有散熱基板之發光二極體的製程3所說明的過程相似， 其不同處僅在形成發光單元的過程而已。在本製程中是先 於一以藍寶石為材質的蟲晶基材21上，以導電型氣化録 化合物為材料，依序磊晶向上形成一 n 1。 _ —P型披覆…再將該覆:型:覆： 233活性發光層232，及部份該n型披覆層23丨之一側蝕 刻移除，使得該η型披覆層231部分區域裸露；然後再將 一透明且可導電之材料形成於該ρ型披覆層233上而成透 明導電層611 ;最後於該透明導電層611上形成一與該ρ 15 型披覆層233形成歐姆接觸之Ρ型歐姆電極234，且，在 該η型披覆層231部分裸露之區域形成一與該η型披覆層 231形成歐姆接觸的η型歐姆電極235，完成如圖6所示 之包含该11型彼覆層231、活性發光層232、ρ型披覆層 233、透明導電層611、ρ型歐姆電極234，及η型歐姆電 1〇 極235之發光單元61的製備。接著進行的其他步驟均與 上述說明相似，在此不再多加贅述。 參閱圖7所示’本發明具有散熱基板之發光二極體之 一第四較佳實施例’與上述具有散熱基板之發光二極體4 相似’其相異之處僅在於本例所述之具有散熱基板之發光 15 1236161 :極體7的發光單元71 ’更包含一以透明且可導電之材 料例如薄鎳金鑛膜、銦錫氧化物，在p型披覆層Us，上 形成-透明導電層7U，該㈣導電層711可在不影響發 光效率的條件下使電流擴散均句，增加該具有散熱基板之 發光二極體7的發光功率。 而製備u亥具有散熱基板之發光二極冑7的製程亦與如 圖3或圖5所說明之具有散熱基板之發光二極體的製程 3、5相似’其不同處僅在於形成發光單元的過程而已，而 蠢晶形成發光單元的過程，又與上述形成有透明導電層的 發光單元相似，故在此不再重複說明。 最後，要特別說明的是，上述具有散熱基板之發光二 極體2、4、6、7中說明的，均是具有「反射鏡」之結構 的發光二極體，而熟知發光二極體技藝人士均知，發光二 極體内之反射鏡的功效在於提高光的取出使用率，若無此 一結構，所影響的僅是使用時發光亮度的差異而已，並不 會造成發光二極體無法運作的狀況發生；因此上述較佳實 施例中所說明具有散熱基板之發光二極體2、4、6、7，亦 可以忽略此「反射鏡」之結構與製程，而製備出亮度較低， 然散熱率較高的發光二極體。 由從上述說明可知，本發明具有散熱基板之發光二極 體及其製程，是應用磊晶品質良好的磊晶基材，磊晶生長 出品質優良的發光單元之後，再薄化磊晶基材至50 Am以 下，使得蠢晶基材因厚度大幅縮減而使熱傳率大幅提昇， 再在低於300 C以下的工作溫度，以貼合（bonding )或電 16 1236161 鍍方式於薄化後的磊晶基材上形成反射鏡反射光線與散 熱基板’不但不會因高溫破壞反射鏡或磊晶品質，並可以 提南光線輸出率，而可改善習知發光二極體為顧及得到高 品質的蠢晶薄膜，但卻犧牲磊晶基材散熱性的缺點，而可 5 兼顧磊晶薄膜的品質，以及提昇基板的散熱功率，而可用 於製作大面積、高功率的藍光或紫外光的發光二極體，確 實達到本發明之目的。 惟以上所述者，僅為本發明之四較佳實施例而已，當 不能以此限定本發明實施之範圍，即大凡依本發明申請專 10 利範圍及發明說明書内容所作之簡單的等效變化與修 飾，皆應仍屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一結構示意圖，說明習知一種發光二極體的構 造； 15 圖2是一結構示意圖，說明本發明具有散熱基板之發 光二極體之一第一較佳實施例的構造； 圖3是一流程圖，說明本發明具有散熱基板之發光二 極體的製程之一第一較佳實施例； 圖4是一結構示意圖，說明本發明具有散熱基板之發 20 光二極體之一第二較佳實施例的構造； 圖5是一流程圖，說明本發明具有散熱基板之發光二 極體的製程之一第二較佳實施例； 圖6是一結構示意圖，說明本發明具有散熱基板之發 光二極體之一第三較佳實施例的構造；及 17 1236161 圖7是一結構示意圖，說明本發明具有散熱基板之發 光二極體之一第四較佳實施例的構造。 18 1236161 圓式之主要元件代表符號說明】 I 發光二極體 32 步驟 II 磊晶基材 33 步驟 12發光單元 121 η型披覆層 122活性發光層 123 ρ型披覆層 124透明導電層 125 ρ型歐姆電極 126 η型歐姆電極 2 具有散熱基板之發光 二極體 21 蠢晶基材 23 反射鏡 23 發光單元 231 η型披覆層 232活性發光層 233 ρ型披覆層 234 ρ型歐姆電極 235 η型歐姆電極 24 散熱基板 25 黏合劑 3 製程 31 步驟 34 步驟 35 步驟 36 步驟 4 具有散熱基板之發光 二極體 21 ’蟲晶基材 22’反射鏡 23’發光單元 231’η型披覆層 232’活性發光層 233’ρ型披覆層 234’ ρ型歐姆電極 235’ η型歐姆電極 24’散熱基板 2 5 ’黏合劑 5 製程 51 步驟 52 步驟 53 步驟 54 步驟 55 步驟 19 1236161 56 6 61 611 步驟 7 具有散熱基板之發光 具有散熱基板之發光 二極體 二極體 71 發光單元 發光單元 711透明導電層 透明導電層 20Chemical-Mechanical Polishing) makes the epitaxial substrate 21 thin to 50 // m or less. In this step 33, the epitaxial substrate 21 may be thinned to a predetermined thickness by a general grinding method, for example, 80 to 120 // m, and then inductively coupled etched (ICP; Inductively Coupled Plasma) by inductive light-welding. The dry-etching method thins the stupid substrate 21 to less than 50 μm. Because there are many such thinning methods, it is not added here-for example. Then, step 34 is performed to form a reflective mirror 22 that can reflect light on the thinned epitaxial substrate 21. In this example, for example, gold (Au), silver (Ag), flip (Pt), aluminum (A1), nickel (Ni), copper (Cu), titanium (Titanium, Ta, Cr) Metals such as palladium (pd), tungsten (w), molybdenum (Mo) or their alloys are used as materials, and physical coatings are used to form a metal reflector. In addition, a dielectric reflector can also be formed using a dielectric material, the dielectric reflection The mirror has a plurality of dielectric reflection units, and each dielectric reflection unit includes two dielectric layers having different refractive indices, and the refractive index of the dielectric layer farther from the epitaxial substrate 21 is smaller than that of the epitaxial crystal. The refractive index of the dielectric layer of the substrate 21; and the material of the dielectric layer may be selected from, for example, zinc selenide (ZnSe), magnesium fluoride (MgF2), silicon oxide (SiO2), silicon (^), nitrogen Silicon oxide (Si3N4), titanium oxide (Ti〇2), oxide button (Ta205), hafnium oxide (JHfO2), oxide junction (Zr〇2), etc., for example, selenide and magnesium fluoride, oxidation; It is matched with broken, silicon nitride and silicon, titanium oxide and silicon, oxide button and silicon, oxidation and oxygen cutting, oxygen thorium and oxygen cutting, oxygen thorium and oxygen cutting, thorium oxide and stone oxide, etc. To which _ comprises two dielectric layers of dielectric reflective unit. θ, Cui then proceed to step 3, select a metal substrate with a high heat dissipation rate such as copper, gold, copper, silver, or other metals or its alloy, or a non-metallic substrate such as silicon oxide, gallium disk, etc. as a The heat-dissipating substrate 24 uses, for example, glue, wax, non-conductive glue, solute gel glass (s〇1_gel Si〇), high 10 1236161 molecular material, photoresist, low-melting point alloy, and the like as the adhesive 25. The reflecting mirror 22 is integrated with the thinned epitaxial substrate 21. Finally, step 36 is performed, and the temporary substrate is removed by using, for example, grinding, etc., to complete the process shown in FIG. The finished product of the first preferred embodiment of the light emitting diode 26. In addition, step 35 can also directly plate the entire surface of the heat sink on the mirror in an electroplating manner; or first use a photoresist on the mirror 22 Form a pre-condensed state, and expose the 22 胄 area of the reflection to the state formed by the photoresist, and then select gold, such as copper, gold, copper, metal, silver, flip, tungsten, etc., or an alloy as The material 'is then charged from an exposed part of the mirror 22 The heat-dissipating substrate 24 is formed, and then the photoresist is removed, so that the formed heat-dissipating substrate 24 has a predetermined appearance. Because there are many ways to change these details, no further examples are given here. Refer to Figure 2 *, based on the above-mentioned process The produced 15 light-emitting diode 2 with a heat-dissipating substrate includes a heat-dissipating substrate 24 with high heat dissipation rate, an adhesive 25, a mirror 22, an epitaxial substrate 21 having a thickness of less than 50 mm and a worm crystal formation. The light-emitting unit 23 is formed on the epitaxial substrate 21. The reflector 22 and the heat-dissipating substrate 24 are integrally connected with an adhesive 25. The light-emitting unit 23 sequentially includes a cladding layer 10 formed on the epitaxial substrate 21. 231, an active light emitting layer 232 formed on the n-type cladding layer 231, a p-type cladding layer 233 formed on the active light-emitting layer 232, an n-type ohmic electrode 235 forming an ohmic contact with the ^ -type cladding layer 231, and The p-type ohmic electrode 234 that forms ohmic contact with the p-type cladding layer 233. When a voltage is applied to the above-mentioned light-emitting diode 2 having a heat-dissipating substrate 11 1236161 p, n-type ohmic electrode 234, 235, a current flows from the p-type Ohmic electrode 234, P-type coating 233, active hair Layer 232, n-type cladding layer 231, and finally to n-type ohmic electrode 235; when the current passes through the active light-emitting layer 232, the electron holes overlap to generate most photons, and the mirror can reflect to the direction of heat dissipation 5 substrate 24 The output light causes most of the generated light to be output outward in a direction opposite to the heat dissipation substrate 24; at the same time, because the epitaxial substrate 21 is thinned to 50 // m or less, and cooperates with the heat dissipation substrate 24 having a high heat dissipation rate So that heat can be quickly conducted away from the light-emitting diode 2 itself, thereby increasing the light-emitting power of the light-emitting diode 2 itself and making a larger area of the light-emitting diode. _ 10 Please refer to FIG. 4, the present invention has heat dissipation The second preferred embodiment of the light-emitting diode of the substrate is made according to a second preferred embodiment of the process 5 of the light-emitting diode with a heat-dissipating substrate according to the present invention. As described below. Referring to FIG. 5, step 51 is performed first, similar to step 31 in the above example. An epitaxial substrate 21 made of sapphire is used as the material, and a conductive gallium nitride compound is used as the material. Material 21, an n-type cladding layer 231, an active light-emitting layer 232, and a p-type cladding layer 233 are formed on the epitaxial layer in order, and the P-type cladding layer 233, The layer 232, and the n-type cladding layer 23 丨 are etched and removed on one side, so that a part of the n-type cladding layer 20 2 231 is exposed; finally, the p-type cladding layer 233 is formed with ρ P-type ohmic electrode 234 'with ohmic contact of the type cladding layer 233', and an n-type ohmic electrode 235 forming ohmic contact with the 0-type cladding layer ρ is formed in the n-type cladding layer 231 σ 卩 exposed area, To complete, as shown in FIG. 4-the d-type coating layer 231, the active light emitting layer 232, the p-type coating layer 12 1236161 and the 11-type ohmic electrode 235, the light-emitting single 233 '' p-type ohm Preparation of electrode 234, element 23 '. 5 10 15 20, in addition to sapphire, the above-mentioned stupid substrate 21 can also be selected from gallium carbide, gallium gallium oxide, zinc oxide, and the like. Then, step 52 is performed, for example, glass is used as a temporary substrate, and the temporary substrate and the p-type coating layer 233 are adhered and integrated with each other using the SQG, photoresist, organic material, and the like. Then, step 53 is performed to make the worm crystal substrate 21 thin by 50 / ζηι by chemical mechanical polishing. In step 53, the worm crystal substrate 21 can also be thinned to a predetermined thickness 'for example, after 80i 12o # m' by a general grinding method. The epitaxial substrate 21 is as thin as 50 // m or less. Since there are many such thinning methods, no more examples are given here. Next, step 54 is performed, and a metal substrate made of a metal or an alloy thereof having a high heat dissipation rate such as copper, gold, nickel, metal, or silver, or a non-metallic substrate such as a silicon substrate, gallium disk, or the like is used as the heat dissipation substrate 24, A light reflecting mirror 22 ′ is formed on the heat dissipation substrate 24 ′. In this example, a metal reflector is formed by using a metal such as gold, silver, platinum, aluminum, nickel, copper, titanium, group, chromium, handle, crane, molybdenum, or an alloy thereof as a material. In addition, a dielectric mirror can also be formed using a dielectric material. The dielectric mirror has a plurality of dielectric reflection units, and each dielectric reflection unit includes two dielectric layers each having a different refractive index. The refractive index of the dielectric layer of the substrate 24 'is smaller than that of the dielectric layer relatively close to the heat-dissipating substrate 24, and the material of the dielectric layer can be selected from, for example, zinc selenide, 13 1236161 disordered lock, oxide stone Xi, Shi Xi, Nitride Shixi, Oxidation tablets and Oxygen ginseng I; y Dagger name I, Oxygenation, and Magnesium fluoride, Oxidation and nitrogen cutting domains, Oxidation, Oxygen and Oxygen cutting, Oxidation 5 10 15 t It is compatible with emulsified silicon, hafnium oxide and oxide, and it is composed of a dielectric reflective unit including two dielectric layers. Questioning pulse :: Step 55, using transparent glue such as transparent glue, non-light-absorbing tincture, solute, bimolecular material, green, etc. as the adhesive 25, the mirror 22 'and the thinned insect crystal Substrate. , Close together. Finally, step 56 is performed, and the temporary substrate is removed by, for example, rubbing, grinding, etc., to complete the finished product of the second preferred embodiment of the light emitting diode 4 with a heat dissipation substrate as shown in FIG. The-& best embodiment 'is produced by a second preferred embodiment of the process of the light-emitting diode with a heat-dissipating substrate of the present invention as shown in FIG. 5, because its structure is the same as that shown in FIG. 2 above. The invention of the light-emitting diode 2 with a heat-dissipating substrate is similar, except that the reflector is first formed on the thinned epitaxial substrate and then attached to the heat-dissipating substrate during the manufacturing process, or the mirror is first formed on the heat-dissipating substrate. See FIG. 4 As shown, the process sequence of the light-emitting diodes having a heat-dissipating substrate according to the present invention is then bonded to the thinned epitaxial substrate, and the light-emitting diodes 2 and 4 having the heat-dissipating substrate are also prepared. Roughly similar, so no longer-detailed description. Referring to FIG. 6, a third preferred embodiment of the light-emitting diode with a heat-dissipating substrate according to the present invention is similar to the above-mentioned light-emitting diode 2 with a heat-dissipating substrate. The difference is only in this example. The light-emitting unit 61 of the light-emitting diode 6 having a heat-dissipating substrate further includes a transparent and electrically conductive material 20 1236161, such as a thin film-gold ore film, indium tin oxide, formed on the p-type cladding layer 233. -Transparent conductive layer 61. The transparent conductive layer 6m can make current spread uniformly without affecting the luminous efficiency, and increase the light emitting power of the light emitting diode 6 with a heat dissipation substrate. 5) The process of preparing the light-emitting diode 6 with a heat-dissipating substrate is similar to the process described in the process 3 of the light-emitting diode with a heat-dissipating substrate, and the difference is only in the process of forming the light-emitting unit. In this process, an n 1 is sequentially formed on a worm crystal substrate 21 made of sapphire and a conductive gasification compound as a material. _ —P-type cladding ... and then the cladding: type: cladding: 233 active light emitting layer 232, and one side of the n-type cladding layer 23 丨 is removed by etching, so that a part of the n-type cladding layer 231 area Exposed; then a transparent and conductive material is formed on the p-type coating layer 233 to form a transparent conductive layer 611; finally, a transparent conductive layer 611 is formed on the transparent conductive layer 611 to form an ohm with the p-15-type coating layer 233 The p-type ohmic electrode 234 is in contact with each other, and an n-type ohmic electrode 235 is formed in the exposed area of the n-type cladding layer 231 to form an ohmic contact with the n-type cladding layer 231. Preparation of the light-emitting unit 61 of the 11-type cladding layer 231, the active light-emitting layer 232, the p-type cladding layer 233, the transparent conductive layer 611, the p-type ohmic electrode 234, and the n-type ohmic electrode 10 235. The other steps that follow are similar to the above description and will not be repeated here. Referring to FIG. 7, “a fourth preferred embodiment of the light-emitting diode with a heat-dissipating substrate according to the present invention is similar to the above-mentioned light-emitting diode 4 with a heat-dissipating substrate”, and the difference is only in this example. Luminescence 15 1236161 with heat-dissipating substrate: the light-emitting unit 71 of the polar body 7 'further comprises a transparent and electrically conductive material such as a thin nickel gold ore film, indium tin oxide, formed on the p-type coating layer Us, -transparent The conductive layer 7U, the plutonium conductive layer 711 can spread the current uniformly without affecting the luminous efficiency, and increase the luminous power of the light emitting diode 7 with a heat dissipation substrate. The process of preparing the light-emitting diode 7 with a heat-dissipating substrate is similar to the processes 3 and 5 of the light-emitting diode with a heat-dissipating substrate as illustrated in FIG. 3 or FIG. 5. The only difference is that the light-emitting unit is formed. Only the process, and the process of forming the light-emitting unit by the stupid crystal is similar to the above-mentioned light-emitting unit having the transparent conductive layer, so the description will not be repeated here. Finally, it should be particularly noted that the above-mentioned light-emitting diodes 2, 4, 6, and 7 having a heat-dissipating substrate are all light-emitting diodes having a structure of a "reflector", and the light-emitting diode technology is well known Everyone knows that the effect of the reflector in the light-emitting diode body is to improve the use of light. Without this structure, it only affects the difference in light-emitting brightness during use, and will not cause the light-emitting diode to fail. The operating condition occurs; therefore, the light-emitting diodes 2, 4, 6, and 7 with the heat-dissipating substrate described in the above-mentioned preferred embodiment can also ignore the structure and manufacturing process of this "mirror" and produce a lower brightness. However, the light emitting diode has a higher heat dissipation rate. From the above description, it can be seen that the light-emitting diode with a heat-dissipating substrate and the manufacturing process of the present invention is an epitaxial substrate with good epitaxial quality. After the epitaxial growth of a light-emitting unit with good quality, the epitaxial substrate is thinned to 50%. Below Am, the heat transfer rate of the stupid substrate is greatly improved due to the substantial reduction in thickness. Then, at an operating temperature below 300 C, the epitaxial wafer is thinned by bonding or electrical 16 1236161 plating. The reflector is formed on the substrate to reflect the light and the heat sink substrate. Not only will the quality of the reflector or epitaxial not be damaged due to high temperature, but also the light output rate can be improved, and the conventional light-emitting diode can be improved to take high quality stupid crystals into consideration. Thin film, but sacrificing the shortcomings of the heat dissipation of the epitaxial substrate, and can take into account the quality of the epitaxial film and improve the heat dissipation power of the substrate, and can be used to make large-area, high-power blue or ultraviolet light-emitting diodes , Indeed achieve the purpose of the present invention. However, the above are only the four preferred embodiments of the present invention. When the scope of implementation of the present invention cannot be limited by this, that is, the simple equivalent changes made according to the scope of the patent application of the present invention and the contents of the description of the invention And modifications should still fall within the scope of the invention patent. [Brief description of the drawings] FIG. 1 is a schematic diagram illustrating the structure of a light-emitting diode that is known; 15 FIG. 2 is a schematic diagram illustrating one of the first preferred implementation of the light-emitting diode with a heat-dissipating substrate according to the present invention The structure of the example; FIG. 3 is a flowchart illustrating one of the first preferred embodiments of the manufacturing process of the light-emitting diode with a heat-dissipating substrate according to the present invention; FIG. 4 is a schematic diagram illustrating the light-emitting diode with a heat-dissipating substrate according to the present invention. Structure of a second preferred embodiment of a polar body; FIG. 5 is a flowchart illustrating a second preferred embodiment of a process for producing a light emitting diode with a heat dissipation substrate according to the present invention; FIG. 6 is a schematic structural view illustrating The structure of a third preferred embodiment of a light-emitting diode having a heat-dissipating substrate according to the present invention; and 17 1236161 FIG. 7 is a schematic diagram illustrating a fourth preferred embodiment of a light-emitting diode having a heat-dissipating substrate according to the present invention. The construction. 18 1236161 Symbol description of the main components of the circle type] I Light-emitting diode 32 Step II Epicrystalline substrate 33 Step 12 Light-emitting unit 121 η-type coating layer 122 Active light-emitting layer 123 ρ-type coating layer 124 Transparent conductive layer 125 ρ Type ohmic electrode 126 η-type ohmic electrode 2 Light-emitting diode with heat dissipation substrate 21 Stupid substrate 23 Reflector 23 Light-emitting unit 231 η-type coating layer 232 Active light-emitting layer 233 ρ-type coating layer 234 ρ-type ohmic electrode 235 n-type ohmic electrode 24 heat-dissipating substrate 25 adhesive 3 process 31 step 34 step 35 step 36 step 4 light-emitting diode 21 having a heat-dissipating substrate 21 'worm crystal substrate 22' reflector 23 'light-emitting unit 231' n-type coating layer 232 'active light-emitting layer 233' p-type coating layer 234 'p-type ohmic electrode 235' n-type ohmic electrode 24 'heat-dissipating substrate 2 5' adhesive 5 process 51 step 52 step 53 step 54 step 55 step 19 1236161 56 6 61 611 Step 7 Light-emitting diode with heat-radiating substrate Light-emitting diode with heat-radiating substrate 71 Light-emitting unit Light-emitting unit 711 Transparent conductive layer Transparent conductive layer 20