TWI233703B - White light emitting device and method for preparing the same - Google Patents

Abstract

The present white light emitting device comprises a substrate with an upper surface and a bottom surface, a stoichiometric silicon nitride film positioned on the upper surface, a plurality of silicon nanocrystals distributed in the stoichiometric silicon nitride film, a first ohmic contact electrode positioned on the stoichiometric silicon nitride film, and a second ohmic contact electrode positioned on the bottom surface. The present method for preparing the red light emitting device first forms a sub-stoichiometric silicon nitride (SiNx) film on a substrate, wherein the numerical ratio (x) of nitrogen atoms to silicon atoms is smaller than 4/3. A thermal treating process is then performed to transform the sub-stoichiometric silica film into a stoichiometric silicon nitride film with a plurality of silicon nanocrystals distributed in the stoichiometric silicon nitride film. The thickness of the stoichiometric silicon nitride film is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 1 and 10 nanometers.

Description

1233703 Rose, description of the invention: [Technical field to which the invention belongs] The present invention relates to a white light emitting element and a preparation method thereof, and particularly to a white light emitting element having a silicon-containing light emitting film and a preparation method thereof. [Previous technology] There are currently two methods of using a light-emitting diode to generate white light ... One is to light three red, green, and blue light-emitting diodes at the same time, and produce white light through the three primary colors; One is to use a blue or ultraviolet light source to excite the phosphor to generate complementary light, and generate white light by mixing the light source with the complementary light. The former has a difference in driving voltage, light output, temperature characteristics, and component life of a light-emitting diode, so it causes a lot of problems in practical applications. Although the latter requires only one light-emitting diode, and it is relatively easy to design the driving circuit, the phosphors used in it have the disadvantages of light emission and poor conversion efficiency. With the attention of countries around the world on issues such as energy conservation and the prevention of the global greenhouse effect, power-saving, environmentally-friendly and safe white light-emitting diodes have become new light sources in the 21st century. At present, the technology widely used to produce white light-emitting diodes was proposed by Japan's Nichia Chemical Company in September 1996, which is coated with a layer of indium gallium nitride (InGaN) blue light (about 460 nm) diode. YAG phosphor. However, its disadvantage is that when blue light excites the YAG phosphor to produce yellow light, part of the energy is lost during the conversion process, so the current luminous efficiency is only 10 to 15 lumens / watt (im / w). In January 1999, Sumitomo Electric developed a white light-emitting diode using zinc selenide (ZnSe) material. Although it does not require white light-emitting diodes using zinc selenide

H: \ HU \ HYG \ Nuclear Energy Institute W2836 \ 92836 DOC 1233703, but its luminous efficiency is only about 8 lumens / watt, and its lifetime is only 8,000 hours. Since the invention of the transistor in 1947, silicon has always played a very important role in the integrated circuit industry. According to Moore ’s prediction, the size of the components of integrated circuits will be reduced to half of the original about every 18 months. Moore's law is mainly based on the continuous innovation of new technologies. And the development of potential applications, and silicon materials are an important cornerstone of this rapid progress. After years of development, the process technology of silicon materials used in integrated circuits can be said to be the most complete and cost-effective. Therefore, if the silicon material can be further developed into a light emitting element, the light emitting element can be specifically integrated with a large-scale integrated circuit (VLSI). Silicon material (Group IV element) is an inefficient light source at room temperature, mainly The origin is that the dagger belongs to the Indirect ban (i_gap) material. Its Radiative recombination rate is very low, and the internal quantum efficiency is only about 丨 〇 · 6 to 1. 〇-7, so that it has always been excluded from its role as a light source. Therefore, the application of silicon materials in the optoelectronic industry is currently limited to detection. , A charge coupled device (charge

Coupled Device ′ (CCD) array image sensor and solar cell and other light receiving elements. In 1990, the British LTCanham discovered that porous silicon (Porous Si, PSi) formed by anodic electrolytic silicon material in hydrofluoric acid solution can generate a high-efficiency visible light source (see Canham LT, APP1. PhyS. Lett., 57, 1040 (1990)). This important invention has initiated research teams from all over the world to invest in the development of silicon light sources. Between 2000 and 2003, many academic researches in the world

H \ HU \ HYG \ Nuclear Energy Institute \ 92836 \ 92836 DOC 1233703 Research institutes and researchers have invested in the development of red or infrared light-emitting diodes on silicon substrates and made many advances (Reference: Mykola Sopinskyy and Viktonya Khomchenko? Current Opinion in Solid State and Material Science 7 (2003) 97-109.). However, although there has been good progress in the research and development of silicon-based light-emitting diodes, there have not been any commercialized optoelectronic products such as light-emitting diodes. Because porous silicon materials have a sponge-like structure, they have some significant disadvantages in the application of light-emitting 7L pieces. In terms of mechanical properties, the 'porous rhenium' material is not suitable for integration into a standard semiconductor process because of its S fragmentation. In addition, the porous material exhibits a high degree of activity in terms of chemical characteristics, and is liable to produce chemical interaction with oxygen atoms in the air, thereby deteriorating the photoelectric performance, so it is difficult to control the change of the photoelectric performance with time. [Summary of the Invention]

The main object of the present invention is to obtain a white-light emitting device with a silicon-containing light-emitting film and a preparation method thereof. In order to achieve the above purpose, Ben Yuming-do not disclose a white light emitting element and preparation method. The white light emitting element includes a substrate, a poor upper surface and a lower surface, a substrate disposed on the upper surface—a silicon film, and a plurality of calariums distributed in the silicon nitride film. A body, a first ohmic electrode disposed on the erbium tetranitride film, and a second ohmic contact electrode disposed on the lower surface. The substrate is a P-type silicon substrate or an η-type substrate. The first ohmic contact is a thin electrode. The pole may be composed of vaporized indium tin. The thickness of the silicon tetrazide thin film is between ”'Zhuo Yuejian * σ 奈 1,000 nanometers, and the size of the silicon sunburst body is between 丨 and 10”

H: \ HU \ HYG \ Nuclear Energy Institute \ 92836 \ 92836 D0C 1233703 Another embodiment of the white light emitting element includes a substrate, a silicon nitride film on the substrate, and a plurality of silicon nitride films distributed on the substrate. A crystalline nano-silicon crystal in a tri-silicon thin film, a He-wang film disposed on the tri-silicon tetra-nitride thin film, a first ohmic contact electrode disposed on the tri-silicon tri-silicon thin film, and a A second ohmic contact on the alloy film. The alloy thin film is composed of silicon, nickel, and gallium, the first ohmic contact electrode is composed of indium tin oxide, and the substrate is a quartz substrate or an aluminum trioxide substrate. The method for preparing the white light emitting element firstly forms a silicon nitride 4 film on a substrate once, and the ratio of the number of nitrogen atoms to the number of stone atoms is less than four-thirds. After that, a heat treatment process is performed to drive a portion of the silicon nitride film of this equivalent ratio; the ε-atom crystals to form a plurality of stone-silver nano-crystals. The sub-equivalent silicon nitride film is formed on the substrate by an atmospheric pressure chemical vapor deposition process, and the process temperature is between 700 and 100 (rc and the deposition time is between 1 and 300 minutes. The The atmospheric pressure chemical vapor deposition process uses a two-gas silicon dihydride and ammonia gas, or a silane and ammonia gas as a reaction gas at a flow ratio between 10: 1 to 1:10. The atmospheric pressure chemical vapor deposition process uses Hydrogen, nitrogen, or argon is used as the transport gas, and the reaction gas is uniformly mixed and sent to the reaction chamber. [Embodiment] The quantum confinement effect makes the energy gap interval of the material widen as the size becomes smaller. Nano-sized crystals have unique optoelectronic properties that are different from those of ordinary large-sized materials. Therefore, in addition to the use of conventional porous silicon materials, researchers have also tried to form the stone by forming a high-stability stone dioxide film. Nanocrystalline (Silicon nanocrytstal, Si-NC) to prepare HAHlAHYG \ Nuclear Energy Institute \ 92836 \ 92836.DOC-1〇! 2337〇3 Shi Xi light source. However, 'silicon nano crystals are formed in silicon dioxide film Only red Or infrared light. The present invention is to form a silicon nanocrystal in a silicon nitride film to emit white light with a wavelength between 400 and 700 nanometers. A method for preparing a silicon nanocrystal that can emit red or infrared light One is to use chemical vapor deposition technology to form a second-generation with excess silicon atoms (Sub-stoichiometric silica film) 'the number of oxygen and silicon atoms The ratio is less than 2. Annealing is then performed to drive two different metal phases (ie, stone eve and silicon monoxide) to separate from each other to form an orderly structure Sheme ’s body and homogeneous structure (Am〇rph〇us) of the stone dioxide, in which the stone dioxide film is used as the mother tissue of stone crystal nanocrystalline boarding (see example. Since a lice silicon material is Homogeneous structure, so there is no strain (Strai ~ free) between silicon nanocrystals and silicon dioxide. The size and density of silicon nanocrystals can be controlled by working parameters such as rhenium film deposition temperature and annealing temperature. Another type of silicon Nanocrystal The preparation method is using ion implantation technology. Ion implantation technology has been developed for many years and has been used in large-scale semiconductor integrated circuit manufacturing processes. Ion implantation technology implants accelerated silicon ions directly into silicon lice. In the thin film, the excess silicon atoms are formed in a local area in the silicon dioxide film. Then, an annealing process is performed to drive the excess silicon atoms to nucleate for t days to form a hosted in the silicon dioxide film (the parent tissue). Shi Xinmian crystal. "Ion implantation technology can adjust the energy and dose of implanted ions to implant the excess Shi Xi atom concentration in a specific local area and depth range (c_ 福 ㈣ 和Distribution is profile. Furthermore, it has been planted in ion cloth ^

H: \ HU \ HYG_ Noso \ 92836 \ 92836.DOC 1233703 Also opened δ no structural defects, and these structural defects lack T 卩 + low atomic diffusion activity (Activati) energy), so that the annealing temperature required to perform metal phase separation is also relatively reduced. However, compared with the chemical vapor deposition process, the time required for the formation of excess silicon atom concentration by ion implantation technology is too long to be suitable for mass production scale. Chemical vapor deposition method widely used in semiconductor processes

Deposition 'CVD) can be divided into atmospheric pressure chemical vapor deposition (APCVD) and low pressure chemistry according to the working temperature range (from 1000 to 丨 00) and the working pressure dry range (from atmospheric pressure to 7Pa, etc.) Vapor deposition (LpcvD) and plasma enhanced chemical vapor deposition (PECVD). Compared with ion implantation technology, chemical vapor deposition has the advantages of accurately controlling the composition and structure of the deposited film, uniform and fast deposition rate, high yield, and low production cost. The metallographic structure of the films formed by low-temperature deposition processes such as low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition is relatively loose, and there are many structural defects and impurities that inhibit crystal growth. This invention is selected for use

Jiu—π 7 Yi Lai-Yu Bu iN-UJ complex order, the matter can be opened "into a high density and high density distribution of silicon nano crystals. y

H: \ HU \ HYG \ ^ «^^ t \ 92836 \ 92836 DOC K still-frequency oscillation power supply 12, an inlet manifold 16 and an outlet manifold ι8 provided in the reverse. -12- 1233703 The graphite block 14 is used to carry the substrate 22 for thin film deposition. Preferably, the graphite block 14 itself has been previously deposited with a thin film 15 composed of carbonaceous fossil and carbon dioxide to prevent the graphite block 14 from being attacked by oxygen molecules. 2 to 4 illustrate a method for preparing a white light emitting diode according to the present invention. In preparing the light-emitting diode 50 according to the present invention, a substrate 22 is first placed on a graphite block 14 in a reaction chamber ιo, and then the graphite block μ is heated to a deposition temperature TD using a high-frequency oscillation power source 12. The substrate 22 may be a -p_type stone evening substrate or a_type stone evening substrate and has an upper surface 23A and a lower table φ23β. After that, a certain number of moles or volume ratio of the reaction gas 17 is mixed by the transport gas (optionally hydrogen gas, chlorine gas or nitrogen gas) u through the intake manifold 16 and sent to the reaction chamber 10. The reaction gas 17 can be two gases. A mixed gas of siH2Ci2 and ammonia (NH3), and the flow ratio or volume ratio of the two is between 1: 10 and 10: 1. In addition, the reaction gas 17 may also be the port / gas' of Shi Xiyan (siH4) 14 nh3, and the flow ratio or volume ratio of the two is between 1:10 and 10: 1. The reaction chamber 10 was maintained at Shen Ji, w π A + 况 积 Product / plate degree TD — a predetermined time t 0 to form a secondary silicon silicon (SiNx) with excess silicon atoms. The thin film 20 is on the upper surface 23 A of the substrate 22, and the backup shield machine also has a ratio of the number of rat atoms to the number of silicon atoms (X) less than two to four. Miscellaneous and deficient 5 This is a product of Yingtian 1 19, for example, nitrogen (N2) and hydrogen chloride (HC1) net gas are discharged through the Nongshan branch of the detoxification ancient field 18 consecutive records. After that, the gas is input to the reaction to 10 in order to form a nitrogen atmosphere, and the temperature of the reaction chamber 10 is raised to a heat treatment temperature τ! 1 p and maintained for a predetermined time tp to A heat treatment process is performed. In addition, lice or lice gas can also be input into the reaction chamber 10 at γ π to carry out the heat treatment process in a hydrogen or argon ring.

H: \ HU \ HYG \ Nuclear Energy Research Institute \ 92836 \ 92836.DOC -13-1233703 The exhibition of the reaction chamber 1 + I5SL β ^ I will drive the excess of the equivalent stone atomic crystals in the nitrogen nitride film 20 of this time to crystallize The reaction process of growth and aging, etc., is used to transform the second field nitride nitride film 2G to form a silicon tetranitride-silicon film 26 having a stone crystal nano 24. The thickness of the silicon nitride film 26 is between 1 and nanometers, and the size of the nanocrystalline silicon 24 is between i and 100 nm. 26 series is used as the mother tissue for the boarding of silicon nanocrystal 24. As shown in Figure 4 of Kouyue Township, a transparent ohmic contact electrode made of tin oxide (Um such as OXlde 'IT0) is formed on the three-stone cyanide film 26 28 and an ohmic contact electrode 30 is formed on the lower surface 23B of the substrate 22 to complete the light emitting pole body 50. If a positive voltage is applied to the transparent ohmic contact electrode 28 and a negative voltage is applied to the ohmic contact electrode 30, the light emitting diode The body 5 () will be excited by the current to emit white light 40. Figure ^ illustrates the known temperature and time of the deposition process, heat treatment process and surface purification process of the present invention. As shown in Figure 5, the deposition temperature ~ is between · C To 1000 C, and the deposition time is between i and fan minutes. The temperature Tp of the heat treatment sequence is between 800 and 130 (rc, and the treatment time tp is between 1 and 300 minutes.… Figure 6 It is the light-induced glory of the stone m-sun body 24 of the tri-nitride thin film 26 of the present invention (P h〇〇〇lummescence (PL) spectrum. The photo-excitation light spectrum is directly irradiated with the four gasification ## 胄 胄 26 'with a He-Cd laser beam (wavelength of 325 nm) Measure the light-excitation light emitted by the Shiximite crystal 24. As shown in FIG. 6, the light-excitation fluorescent light emitted by Shiximite crystal 24 contained in the tri-silicon tetranitride film 26 is at a wavelength of 4 Between 00 and 700 nanometers, there is a continuous spectrum of ΗΛ intestine HYG \ nuclear energy where the coffee is located 92636d〇c -14-1233703, that is, the white light of the light can be seen. Figure 7 illustrates a light-emitting diode of a second embodiment of the present invention 70. As shown in FIG. 7, the light-emitting diode 70 includes a substrate 33, an alloy thin film 60 disposed on the substrate M, and a silicon trinitride film disposed on a partial surface of the alloy thin film 60. 26. A transparent electrode 28 provided on the silicon nitride film and an ohmic contact electrode 64 provided on a part of the surface of the alloy film 60. The silicon nitride film 26 is prepared by the aforementioned method and thus It has a silicon nano crystal 24 that can emit white light. The alloy thin film 60 is composed of silicon, nickel, and gallium, and is n + type, that is, -n + _GaNiSi thin film. The ohmic contact electrode 64 may be composed of a titanium-aluminum alloy. The substrate 33 may be a quartz substrate such as z) or an Al2O3 (Sapphire) substrate. The present invention uses a high temperature The atmospheric pressure chemical vapor deposition process is used to prepare the silicon nitride film 20 with the equivalent weight ratio. The chemical reaction formula is:

SiH2Cl2 + xNH3-> SiNx + ~ xH2 + 2HC1 Under a high temperature environment with a deposition temperature TD of 700 to 1000c, hydrogen, nitrogen or argon is used as the transport gas. SiH2Ci2 and Nw compound are uniformly mixed and sent to the high-temperature reaction chamber ι〇. In the high-temperature reaction chamber 10, 8 汨 2 (: 12 and NA compounds will be dissociated into an atomic state at high temperature, respectively, and then recombined to form silicon nitride with a sub-equivalent ratio and deposited on the substrate 22. Deposited on the substrate The silicon nitride on 22 contains an excess of silicon atoms, and the amount of excess silicon atoms can be measured by the non-destructive detection method. The relative ratio of the number of nitrogen atoms to the number of excess silicon atoms (N / Si) 2 For example, by speculation Its light refractive index relative to standard si3N4 can infer the phase of the number of nitrogen atoms and the number of excess silicon atoms (N / Si)

H: \ HU \ HYG \ Nuclear Energy Institute \ 92836 \ 92836.DOC -15-1233703 comparative example. The melting point (TM) of silicon is about 1430 ° C, and its crystallization nucleation temperature (TN) is about 0.6 X TM ^ 85 8 ° C. The deposition temperature Td of the second equivalent silicon nitride film 20 is between 7 0 C and 100 0, which is significantly higher than the crystallization nucleation temperature. Therefore, during the deposition of the second equivalent silicon nitride film 20, At the same time, the high temperature in the reaction chamber ι0 also drives a large portion of the excess equivalent of the silicon nitride atoms in the silicon nitride film 20 to form a silicon nanocrystal core (Nudeus), and forms a silicon nanocrystal core and the parent ( The interstate structure is composed of two stone slags. The interface structure between the Shixi nanocrystal and the matrix is mainly composed of dangling bonds and nitrogen-oxygen bonds around the silicon nanocrystal. For example, silicon-nitrogen bonds (Si_N bonds), silicon-nitrogen bonds (Si_Nbonds), silicon-oxygen bonds (Si_〇, and stone-nitrogen-oxygen bonds (Si-Nx-〇y). The interface structure It is the main fluorescent center (ouminescence centers) °, and then annealed processes such as growth and aging of silicon nanocrystals are performed. The main structural composition of the secondary silicon nitride thin film 20 includes a homogeneous structure (amorphous) of silicon nitride and a cluster of excess silicon atoms (ciu such as osmium, where most of the excess silicon atom clusters have been A silicon nanocrystal core is formed. The silicon nitride film 20 with the equivalent ratio is placed in a high temperature environment of heat treatment temperature and maintained for a period of time tp to complete the growth and interface of all Shixi nanocrystals. The chemical conversion is to convert the equivalent ratio of the gadolinium nitride film 2G to the three-second tetranitride film with a nanocrystalline 24. In addition, if the equivalent weight t is the excess in the nitrided H film 2G; The temperature of the H 4 thermal treatment sequence that did not form the Shi Xijin body during the deposition process further advances the nucleation of the excess silicon atoms in the silicon nitride film 20 with an equivalent ratio of this time.

H + VHU \ HYG \ Nuclear Energy Institute \ 92836 \ 92836.DOC -16-1233703 The deposition method uses: 1Γ The Ming system uses a high-temperature atmospheric pressure chemical vapor phase to capture the Γ / technology to prepare a thin film with a cut (ie, with a stone eve) ^ White light emission of the 24th trinitride film of 26): polar body 50, which has the following advantages: This material requires complicated vermicular crystal manufacturing process and expensive process equipment, and only needs to deposit one level of equivalent Compared with nitride nitride film 20 and heat treatment process, it has the advantages of simple and fast process. 2. The present invention uses the normal M chemical vapor deposition process to prepare the equivalent fossil film 20, and the atmospheric pressure chemical vapor process can be integrated into a standardized semiconductor process. Therefore, the present invention has a large number of white light emitting diodes. Polar body advantages. 3. The conventional technique uses a ΠΙ_ν group compound to produce a light-emitting film that damages a light-emitting element, thereby making it cost-effective. The present invention uses nitride stone to prepare the cut light-emitting film of the light-emitting diode 50, so the material and manufacturing cost are relatively low. 4. The inferior compounds used in the conventional technology can produce toxic chemicals. The present invention uses silicon nitride to prepare silicon-containing light-emitting films of light-emitting elements. It has no problems with the use and emission of chemical and toxic heavy metals, and is a green environmental protection process. 5 · Select the inter-temperature TD condition to form a silicon nitride thin film 20 with a second equivalent ratio of excess silicon atoms, and then heat-treated to convert it into a silicon tetranitride thin film 26 with silicon nanocrystals 24, which has high temperature stability. It can directly generate white light without mixing light with another beam. 6 · The equivalent weight after high temperature TP heat treatment is higher than that of the silicon nitride film

HU \ HU \ HYG \ Nuclear Energy Institute \ 92836 \ 92836.DOC 1233703 The dense, higher density distribution of silicon nanocrystals 24 and lower impurities, so silicon nanocrystals 24 and their interface structures can be excited to produce clearer High brightness white light spectrum. The technical content and technical features of the present invention have been disclosed as above. However, those skilled in the art may still make various substitutions and modifications based on the teaching and disclosure of the present invention without departing from the spirit of the present invention. Therefore, the protection scope of the present invention should not be limited to those disclosed in the embodiments, but should include various substitutions and modifications that do not depart from the present invention, and should be covered by the scope of patents. [Brief Description of the Drawings] Figure 1 is a schematic diagram of an atmospheric pressure chemical vapor deposition device; Figures 2 to 4 illustrate the preparation method of the white light emitting diode of the present invention; Figure 5 illustrates the deposition process, heat treatment, and surface of the present invention The operating temperature and time of the purification procedure; Figure 6 is a light-excitation fluorescence spectrum of a silicon nanocrystal of an emulsified stone film of ^^ ^ + Θ of the present invention, and Fig. 7 illustrates the present invention-each ^

Light emitting diode of the first embodiment [Element symbol description] 10 Reaction chamber 12 High-frequency vibration power source 15 Film 17 Reaction gas 19 Reaction byproduct 22 Substrate 23B lower surface 11 Transport gas 14 Graphite block 16 Intake manifold 18 Outlet manifold 20 times equivalent to silicon nitride film 23A upper surface 24 silicon nanocrystals

H: \ HU \ HYG \ Nuclear Energy Institute \ 92836 \ 92836 DOC 18- 1233703 26 Trisilicon tetranitride film 28 Ohm contact electrode 30 Ohm contact electrode 40 White light 33 Substrate 50 Light emitting diode 60 Alloy film 64 Ohm contact electrode 70 Light Diode 100 chemical vapor deposition device Η \ HU \ HYG \ Nuclear Energy Institute \ 92836 \ 92836.DOC-19-

Claims (1)

1233703 Patent application scope: 1 · A white light emitting element, comprising: a substrate with an upper surface and a lower surface;-a tri-silicon nitride film disposed on the upper surface; a plurality of silicon nanocrystals distributed on Among the silicon nitride films, the size of the silicon nanocrystal is between 1 and 10 nanometers; a first ohmic contact electrode is disposed on the silicon nitride film; and The first ohmic contact electrode is disposed on the lower surface. 2. For example, the white light-emitting device W in the scope of the patent application, wherein the thickness of the silicon nitride film is between 1 and 100,000 nanometers. 3. For example, the white light emitting element in the scope of application for patent i, wherein the substrate is a P-type Shixi substrate or an n-type Shixi substrate. The white light-emitting element according to item 4.2 of the patent application, wherein the first ohmic contact electrode is composed of indium tin oxide. 5 · —a kind of white light emitting element, including a substrate; an alloy thin film provided on the substrate;-a tri-silicon tetranitride thin film provided on the alloy and a plurality of nanocrystalline silicon crystals distributed on the tetranitrogen The surface of the fossilized Sanshixi film has a size between 奈 ^) nanometers, and the upper 7 :: ohm contact electrode is provided on the 6.three oscillated silicon nitride film. One second ohm The contact electrode is provided on a partial surface of the white light-emitting element film of the alloy such as claimed in claim 5. Its thickness is H: \ Hl; \ HYG \ Nuclear Energy Institute \ 92836 \ 92836.DOC! 2337〇3 The thickness of the Shi Xi film is between 丨 and 〇〇〇〇〇〇nm. 7. The white light-emitting device according to item 5 of the application, wherein the alloy thin film is composed of silicon, nickel, and gallium. 8. The white light emitting element according to item 5 of the application, wherein the first ohmic contact electrode is made of rhenium tin oxide. 9. The white light emitting element according to item 5 of the patent application scope, wherein the substrate is a stone substrate or a trioxide substrate. I 〇— A method for preparing a white light emitting device, comprising: providing a substrate; forming a silicon nitride film having a first equivalent ratio on the substrate, wherein a ratio of the number of nitrogen atoms to the number of silicon atoms of the second equivalent silicon nitride film Less than three-thirds; and performing a heat treatment process to convert the equivalent silicon nitride film into a silicon nitride film with silicon nanocrystals, wherein the size of the silicon nanocrystals ranges from 1 to 10 Between nanometers. II. A method for preparing a white light emitting device according to item 10 of the patent application range, wherein the silicon nitride thin film of the second equivalent ratio is formed on the substrate by an atmospheric pressure chemical vapor deposition process, and its deposition temperature is between 70 and 200. 〇S1〇〇 (rc. 1 2) As described in the patent application scope of the white light-emitting device manufacturing method, wherein the name # pressure chemical vapor deposition process uses silicon dihydrogen hydride and ammonia as the reaction gas. … 13. The method for preparing a white light emitting device according to item 12 of the application, wherein the flow ratio of the silicon dichlorodihydride to the ammonia gas is between 10: 丨 and 丨: 10. 14 · 如The method for preparing white light-emitting device claimed in item u of the patent scope, in which H: \ HU \ H YGWS Energy Institute V52836 \ 92836.DOC 1233703 / ¥ methionine vapor deposition process system, which reacts with sintering and ammonia gas 15. The method for preparing white light-emitting elements in the scope of claim 14 of the patent claim, in which the flow ratio of helium sintering and 4 ammonia gas is between i⑴i and i ·· i 〇 16. For example: please A method for preparing a white light emitting element according to item u of the patent, wherein The transport gas system of the atmospheric pressure chemical vapor deposition process is selected from the group consisting of hydrogen, nitrogen, and argon. 17. · A method for preparing a white light emitting device according to item 10 of the patent application, wherein the processing temperature of the heat treatment process is referred to Between 800 and i300 ° C, and the processing time is between 1 and 300 minutes. 18. The method for preparing a white light emitting device according to item 10 of the patent application, wherein the heat treatment process is performed under nitrogen and hydrogen Or argon. HAHU \ HYG \ Nuclear Energy Institute \ 92836 \ 92836.DOC