1231246 」务正 _案號 93102852 五、發明說明(1) 【發明所屬之技術領域】 本發明係一種鑽石晶圓研磨方^ 屬·片以研磨鑽石晶圓之方法。 、,特別是一種利用金 L先前技術】 在半導體製程中,為增進籍雜恭 層材質的厚度與平整度均需嚴格要求路^密度’晶圓上每 化是半導體製程中一道重要的;;未二此晶圓表面平坦 一接此担处曰m主二表程,其中化學機械研磨為 種此k供日日固表面平坦化之重要製程技術。 如第圖所不’其係一化學機械研磨裝置示意圖,由 圖I知…研磨頭10利用氣壓變化之方式,吸附一晶圓12 之背面,並使晶圓12正面朝向一研磨塾14進行研磨,而為 避免研磨頭10與晶圓12直接接觸導致晶圓12毁損,於研磨 頭10與晶圓12間會設置一具有複數個通氣孔之緩衝墊16以 作為缓衝之用’且當晶圓12進行研磨時,尚有一研磨液輸 送裝置18會噴灑研磨液20 (Slurry)以協助研磨。 然而,對於鑽石晶圓而言,亦即對於表面形成有鑽石 薄膜之晶圓而言,由於鑽石薄膜具有極佳的物理與化學特 性,因此傳統的化學機械研磨方法難以有效研磨鑽石薄 膜’故若欲將鑽石薄膜應用在精密的電子元件上,會受限 於鑽石薄膜高達數微米的表面粗糙度,而儘管目前有許多 關於鑽石薄膜平坦化技術的研究,但因為鑽石本身是相當 難以加工的材質,故考量到加工效率、所需的設備成本以 及加工時間等’至今尚無有效的鑽石晶圓研磨方法。 W 有鑑於此,本發明提出一種鑽石晶圓研磨方法,以改1231246 "Wu Zheng _ case number 93102852 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention is a method for polishing diamond wafers by using a method to grind diamond wafers. In particular, the previous technology using gold L] In the semiconductor process, in order to improve the thickness and flatness of the material of the heterogeneous layer, strict requirements are required. The density of the wafer is important in the semiconductor process; The surface of the wafer is flat and connected to this load. The main process is chemical mechanical polishing, which is an important process technology for flattening the surface. As shown in the figure, it is a schematic diagram of a chemical mechanical polishing device. As shown in FIG. 1, the polishing head 10 uses the method of changing the air pressure to adsorb the back surface of a wafer 12 and makes the front surface of the wafer 12 face a polishing pad 14 for polishing. In order to avoid the damage of the wafer 12 caused by the direct contact between the polishing head 10 and the wafer 12, a cushion pad 16 having a plurality of vent holes will be provided between the polishing head 10 and the wafer 12 as a buffer. When the circle 12 is being ground, there is still a grinding liquid conveying device 18 that sprays a grinding liquid 20 (Slurry) to assist the grinding. However, for diamond wafers, that is, for wafers with a diamond film formed on the surface, the diamond film has excellent physical and chemical properties, so it is difficult for traditional chemical mechanical polishing methods to effectively grind the diamond film. The application of diamond films to precision electronic components is limited by the surface roughness of diamond films up to several microns. Although there are many studies on diamond film planarization technology, diamonds are very difficult to process. Therefore, considering the processing efficiency, required equipment cost, and processing time, etc., there is no effective diamond wafer polishing method yet. In view of this, the present invention proposes a diamond wafer polishing method to modify
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善習知技術之不足。 【發明内容】 本發明:主要目的,係提供一種鑽石晶圓研磨方法, :係利用一第一傳動裝置帶動鑽石晶圓向一旋轉之 =近,藉此使金屬片研磨鑽石晶圓之表面,以達 磨效率之目的。 9進研 種鑽石晶圓研磨方法Knowing the shortcomings of technology. [Summary of the invention] The present invention: the main purpose is to provide a diamond wafer grinding method: using a first transmission device to drive the diamond wafer to a rotation of close to, so that the metal sheet grinds the surface of the diamond wafer, For the purpose of Daruma efficiency. 9 advanced research diamond wafer polishing methods
本發明之另一目的,係提供一 此節省研磨之時間與成本。 根據本發明,首先,將至少一鑽石晶圓固定於一 真空的方式,將工件固定於一研磨機台之 第一傳動裝置上,此第一傳動裝置會帶動工件向一 第二傳動裝置上金屬h近’此金屬片在第:傳=的 轉狀態’故當固定於工件表面之鐵石晶圓 罪近該鉍,之金屬片時,其便會將鑽石晶圓加以研磨。 底下藉由具體實施例的說明,並參照所附之。 更容易瞭解本發明之目❸、技術内容、特點及其所;忐: 功效。 咬风之 【實施方式】 一轉 本、 本發明係提供一種鑽石晶圓研磨方法, 動之金屬片,研磨鑽石晶圓之表面,藉此節省研 縮短研磨時間並增進研磨效率。 如第二圖所示,本發明之鑽石晶圓研磨 蠟程序,其係將複數片鑽石晶圓30以蠟貼附於一=一上 上,接著再利用一定壓力將鑽石晶圓3〇與工件“固=3在2 一 五、發明說明(3) 而在完成上蠟程序後,便開始進行研磨程序,參昭第 三圓,研磨程序之步驟包括:首先,利用吸真空之方J, 將貼附有鑽石晶圓30之工件32固定於研磨機台34之第一傳 動.裝置36上’而此第一傳動裝置36能帶動工件32及其上 f石晶圓30前進、後退以及旋轉或上下左右移動;在固定 裝即:操作一控制裝置38,使其控制第-傳動 維持徒轉狀態,且位置保持不變,而上下 二:二研磨參數,以適當控制鑽石晶圓;J 8: 磨時間及研磨方式等;因此 =磨尽度、研. 制裝置38的控制下,透過 裝置36會在控 其與旋轉之金屬片㈣接觸:3』==3。前進,使 -段時間後’控制裝置38可根據研動作,而在研削 傳動裝置36帶動鑽石晶圓 帶設定,令第一 匕右移動;然後第一傳動裝置隨旋轉 後退之過程,以讓金屬片40重覆研廢J重覆别述前進與 鐵石晶圓30研磨至所要求之厚度為2鑽石晶圓30,直到將 另外,為了冷卻研磨 粒或碎屬等,研磨機台34上更且= 及沖洗研磨粉 44,如第三圖所示 ;=-冷卻液喷出口 洗並冷卻鑽石晶圓30或金屬=::=會嘴出冷卻液以沖· 之材質則可為鋼鐵或其合金,而。再者,金屬片40 二塑:等材質,至於鑽石 二材質則可為陶莞 外’更可以其它黏性物或其它於工件32上 方式固定於工件32上 1231246 -"篆號931咖R9 年月日 修正 五、發明說明(4) 而為了增加利用本發明之彈性,參照第三圖,於進行 :磨鑽石晶圓3〇時,亦可透過控制裝置38之操控,使第一 ,動裳置36保持不動,而使第二傳動裝置42帶動金屬片4〇 旋*轉’並同時帶動金屬片4〇往鑽石晶圓3〇前進,以研削其 厚度’同理,控制裝置38更可根據輸入研磨參數之不同, 操控第一、第二傳動裝置36、42進行旋轉、前進、後退或 上下左右移動等動作,藉此達到多樣化的研磨方式及研磨 效果。 惟以上所述之實施例僅為本發明之較佳實施例而已, 並非用以限定本發明實施之範圍。故凡Another object of the present invention is to provide time and cost savings in grinding. According to the present invention, first, at least one diamond wafer is fixed in a vacuum, and a workpiece is fixed on a first transmission device of a grinding machine. The first transmission device will drive the workpiece to a second transmission device to metal. h Nearly 'this metal sheet is in the turning state of the first: pass =' So when the iron wafer fixed on the surface of the workpiece is close to the metal sheet of bismuth, it will grind the diamond wafer. The following description of specific embodiments, and refer to the attached. It is easier to understand the purpose, technical content, characteristics and features of the present invention; 忐: efficacy. [Embodiment] First Turn This and the present invention provide a diamond wafer polishing method, which uses a moving metal sheet to polish the surface of the diamond wafer, thereby saving research time, shortening the polishing time, and improving the polishing efficiency. As shown in the second figure, the diamond wafer grinding wax procedure of the present invention is to attach a plurality of diamond wafers 30 to wax with one on one, and then use a certain pressure to attach the diamond wafer 30 to the workpiece. "Solid = 3 in 2 1-5. Description of the invention (3) After the waxing process is completed, the grinding process is started. Refer to the third circle. The grinding process includes the following steps: First, use the vacuum method J, The workpiece 32 to which the diamond wafer 30 is attached is fixed to the first drive of the grinding machine 34. The device 36 is used to drive the workpiece 32 and the wafer 30 thereon forward, backward, and rotate. Move up, down, left and right; in the fixed installation, that is: operate a control device 38 to control the first drive to maintain the state of rotation, and the position remains unchanged, and up and down two: two grinding parameters to properly control the diamond wafer; J 8: Grinding time, grinding method, etc .; therefore = under the control of grinding exhaustion and grinding device 38, the transmission device 36 will control its contact with the rotating metal sheet ㈣: 3 "== 3. Go forward and make-a period of time later 'The control device 38 can grind the transmission device 36 according to the research operation. Drive the setting of the diamond wafer belt to move the first dagger to the right; then, the first transmission device revolves with the rotation, so that the metal sheet 40 repeats the research and waste J, repeats the other progress and the stone wafer 30 is ground to the required The thickness is 2 diamond wafers 30. In addition, in order to cool the abrasive particles or broken particles, etc., the grinding machine 34 is changed and the grinding powder 44 is washed, as shown in the third figure; The material for cooling the diamond wafer 30 or metal = :: = can mouth the cooling liquid to punch. The material can be steel or its alloy. Moreover, the metal sheet 40 is second grade: and other materials, and the second grade of diamond can be Tao Wanwai can also be fixed to the workpiece 32 by other sticky materials or other methods on the workpiece 32 1231246-"篆 号 931 咖啡 R9 year, month, day, amendment five, description of the invention (4) and in order to increase the flexibility of the invention Referring to the third figure, during the grinding of the diamond wafer 30, it is also possible to keep the first and moving clothes 36 stationary through the control of the control device 38, and the second transmission device 42 to drive the metal piece 40 to rotate. * Turn 'and drive the metal sheet 40 to the diamond wafer 30 at the same time. Grinding its thickness is the same. The control device 38 can also control the first and second transmissions 36 and 42 to perform rotation, forward, backward, or up, down, left, and right movements according to the different input grinding parameters, thereby achieving a variety of grinding. Method and grinding effect. However, the embodiments described above are only preferred embodiments of the present invention, and are not intended to limit the scope of implementation of the present invention.
範圍所述之形狀、槿造、特徵及笋妯私* + f θ T 構以特徵及精神所為之均等變化與修 飾,均應包括於本創作之申請專利範 1231246 _案號93102852_年月日 修正 圖式簡單說明 圖式說明: 第一圖為習知化學機械研磨加工示意圖。 家二圖為本發明上蠟程序示意圖。 第.三圖為本發明研磨程序示意圖。The shapes, hibiscuses, characteristics, and characteristics described in the scope * + f θ T equal changes and modifications based on characteristics and spirits should all be included in the patent application for this creation 1231246 _ case number 93102852_ year month The modified diagram is briefly explained. The first diagram is a schematic diagram of a conventional chemical mechanical polishing process. The second figure is a schematic diagram of the waxing procedure of the present invention. The third figure is a schematic diagram of the grinding process of the present invention.
圖號說明: 10 研磨頭 12 晶圓 14 研磨墊 16 緩衝墊 18 研磨液輸送裝置 20 研磨液 30 鑽石晶圓 32 工件 34 研磨機台 36 第一傳動裝置 38 控制裝置 40 金屬片 42 第二傳動裝置 44 冷卻液喷出口Description of drawing number: 10 polishing head 12 wafer 14 polishing pad 16 cushion pad 18 polishing liquid conveying device 20 polishing liquid 30 diamond wafer 32 workpiece 34 polishing machine table 36 first transmission device 38 control device 40 metal piece 42 second transmission device 44 coolant outlet