TWI230412B - Cleaning method of substrate - Google Patents
Cleaning method of substrate Download PDFInfo
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- TWI230412B TWI230412B TW92108747A TW92108747A TWI230412B TW I230412 B TWI230412 B TW I230412B TW 92108747 A TW92108747 A TW 92108747A TW 92108747 A TW92108747 A TW 92108747A TW I230412 B TWI230412 B TW I230412B
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- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 238000004140 cleaning Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 41
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 24
- -1 hydroxyl ions Chemical class 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims description 15
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000011572 manganese Substances 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 125000003277 amino group Chemical group 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 3
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims description 3
- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical compound [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 claims description 3
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 3
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- 229910001448 ferrous ion Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 3
- 229910001437 manganese ion Inorganic materials 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 8
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 229910001868 water Inorganic materials 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 abstract 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 10
- 239000002699 waste material Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
Description
1230412 五、發明說明（1) 【發明所屬之技術領域11230412 V. Description of the invention (1) [Technical field to which the invention belongs 1
一種在基板上具有圖 一種基板清洗方法，且特別是有關於 案化金屬層的基板清洗方法。 【先前技術】 液晶顯示器（liquid crystal display，LCD)因具 有低幅射性以及體積輕薄短小之優點，故於使用上日漸廣 泛。而薄膜電晶體（thin film transistor，TFT) LCD 因 為其高亮度與大視角的特性，在高階電子產品上更是廣受4 歡迎。其中，TFT LCD至少包括玻璃基板（glass substrate )、多條掃描線（s c a η 1 i n e )、多條資料線 (data line)、多個儲存電容（storage capacitor)及多 個 TFT。 請參照第1圖，其繪示乃傳統之玻璃基板清洗方法的 流程圖。在第1圖中，首先，在步驟1 〇 2中，提供一玻璃基 板。接著’進入步驟104中，錢鍍一金屬層於玻璃基板 上’金屬層例如是銘合金層或含紹金屬層。然後，進入步 驟106中，形成一光阻層於金屬層上。接著，進入步驟1〇8 中’圖案化此光阻層’以形成一圖案化光阻層於金屬層 _丨 上’並暴露部分之金屬層。然後，進入步驟11 〇中，以蝕 刻方式去除暴露之金屬層，並形成一圖案化金屬層。其 中’此圖案化金屬層例如是圖案化鋁合金層或圖案化含鋁 金屬層’且此圖案化金屬層即TFT-LCD之掃描線（scan line) °The invention relates to a substrate cleaning method having a figure on a substrate, and more particularly to a substrate cleaning method involving a metallized layer. [Prior technology] Liquid crystal displays (LCDs) are becoming more and more widely used due to their advantages of low radiation and small size. Thin film transistor (TFT) LCDs are popular among high-end electronic products because of their high brightness and wide viewing angle. The TFT LCD includes at least a glass substrate, a plurality of scanning lines (sca n 1 ine), a plurality of data lines, a plurality of storage capacitors, and a plurality of TFTs. Please refer to Figure 1, which shows a flowchart of a conventional glass substrate cleaning method. In Fig. 1, first, in step 102, a glass substrate is provided. Next, in step 104, a metal layer is plated on the glass substrate. The metal layer is, for example, an alloy layer or a metal-containing layer. Then, step 106 is performed to form a photoresist layer on the metal layer. Then, the method proceeds to step '108' 'patterning this photoresist layer' to form a patterned photoresist layer on the metal layer _ 丨 'and exposing a part of the metal layer. Then, the method proceeds to step 11 to remove the exposed metal layer by etching and form a patterned metal layer. ‘The patterned metal layer is, for example, a patterned aluminum alloy layer or a patterned aluminum-containing metal layer’, and the patterned metal layer is a scan line of a TFT-LCD °
第5頁 1230412 五、發明說明（2) 接著，進入步驟11 2中，以T0K- 1 0 6為光阻剝離劑 (stripper)來清洗玻璃基板，並去除圖案化光阻層。其 中，TOK-106包括70wt%之單乙醇胺 (monoethanolamine，NH2CH2CH2OH，MEA)及30wt% 之二甲 亞石風（dimethyl sulfoxide，CH3S0CH3，DMS0)。然 後，進入步驟114中，以二甲亞石風（DMSO )為中間清洗 液（intermedia rinse)來清洗玻璃基板，並去除Τ0Κ- 1 0 6。接著，進入步驟11 6中，以去離子水清洗玻璃基板， 並去除DMS0。 需要注意的是，當DMS0清洗完玻璃基板後，玻璃基板 上之圖案化金屬層上仍然會有殘留的TOK-丨〇6 ,而其中具 有胺基（-NH2 )之單乙醇胺將容易與去離子水反應而生成 驗性的氫氧根離子（0H-)。此時，玻璃基板上之圖案化金 屬層將容易與氫氣根離子反應，而產生腐蝕現象。另外， 由於DM SO之價格非常昂貴，傳統之玻璃基板清洗方法必須 使用大量的DMS0為中間清洗液，導致使用者必須在購買 DMS0方面必須耗費較高的成本。此外，清洗玻璃基板後所 產生之3有DMS0的廢液具有工安問題，將會增加廢液處理 費用。 【發明内容】 有鑑於此’本發明的目的就是在提供一種基板清洗方 法’其利用金屬離子容易跟氫氧根離子結合之特性，來降 低基板上圖案化金屬層與氫氧根離子反應之機率，避免圖Page 5 1230412 V. Description of the invention (2) Next, proceed to step 11 2 to clean the glass substrate with TOK-106 as a photoresist stripper and remove the patterned photoresist layer. Among them, TOK-106 includes 70% by weight of monoethanolamine (NH2CH2CH2OH, MEA) and 30% by weight of dimethyl sulfoxide (CH3S0CH3, DMS0). Then, in step 114, the glass substrate is washed with DMSO as an intermediate cleaning solution, and TOK-106 is removed. Then, the process proceeds to step 116, the glass substrate is washed with deionized water, and DMS0 is removed. It should be noted that after DMS0 cleans the glass substrate, there will still be TOK- 丨 〇6 on the patterned metal layer on the glass substrate, and the monoethanolamine with amine group (-NH2) will be easily deionized. The water reacts to generate the hydroxyl hydroxide ion (0H-). At this time, the patterned metal layer on the glass substrate will easily react with the hydrogen ion and cause corrosion phenomenon. In addition, because DM SO is very expensive, traditional glass substrate cleaning methods must use a large amount of DMS0 as an intermediate cleaning solution, resulting in users having to spend a higher cost in purchasing DMS0. In addition, the 3 DMS0 waste liquids generated after cleaning the glass substrate have industrial safety problems, which will increase the waste liquid treatment costs. [Summary of the Invention] In view of this, the purpose of the present invention is to provide a substrate cleaning method, which uses the characteristic that metal ions are easily combined with hydroxide ions to reduce the probability of the patterned metal layer on the substrate reacting with hydroxide ions. Avoid graph
TW1037F(奇美）.ptd 第6頁 1230412 五、發明說明（3) 案化金屬層產生腐蝕現象。除可節省購買DMS0的花費開 銷，且減少含DMS0之廢液處理費用。 : 根據本發明的目的，提出一種基板清洗方法，用以清 -洗一基板，基板上具有一圖案化金屬層及一形成在圖案化 金屬層上之圖案化光阻層，而圖案化金屬層例如是圖案化 鋁合金層或圖案化含鋁金屬層。在此方法中，首先，以一 具有胺基之光阻剝離劑去除圖案化光阻層。接著，以一具 有金屬離子之中間清洗液清洗基板。然後，以一去離子水 清洗基板。 j 根據本發明的再一目的，提出一種金屬圖案的形成方 法。首先，提供一基板。接著，形成一銘合金層或一含I呂 金屬層於基板上。然後，形成一圖案化光阻層於鋁合金層 或含鋁金屬層上，並暴露部分之鋁合金層或含鋁金屬層。 接著，去除暴露之铭合金層或一含紹金屬層。然後，去除 圖案化光阻層。其中，在去除圖案化光阻層的步驟中，首 先，以一具有胺基之光阻剝離劑清洗基板。接著，以一具 有金屬離子之中間清洗液清洗基板。然後，以一去離子水 清洗基板。 根據本發明的另一目的，提出一種基板清洗方法，其則 中基板上具有一圖案化金屬層及一形成在圖案化金屬層上 之圖案化光阻層，而圖案化金屬層例如是圖案化鋁合金層 或圖案化含鋁金屬層。首先，以一具有胺基之光阻剝離劑 去除該圖案化光阻層。接著，以一醋酸清洗液清洗基板。 然後，以一去離子水清洗基板。TW1037F (Chimei) .ptd Page 6 1230412 V. Description of the invention (3) The corroded metal layer has a phenomenon of corrosion. In addition, it can save the cost of purchasing DMS0, and reduce the disposal cost of waste liquid containing DMS0. According to the purpose of the present invention, a substrate cleaning method is provided for cleaning and washing a substrate. The substrate has a patterned metal layer and a patterned photoresist layer formed on the patterned metal layer, and the patterned metal layer. For example, it is a patterned aluminum alloy layer or a patterned aluminum-containing metal layer. In this method, first, the patterned photoresist layer is removed with a photoresist stripper having an amine group. Next, the substrate is cleaned with an intermediate cleaning solution having metal ions. Then, the substrate was washed with deionized water. j According to still another object of the present invention, a method for forming a metal pattern is proposed. First, a substrate is provided. Next, a metal alloy layer or an I-containing metal layer is formed on the substrate. Then, a patterned photoresist layer is formed on the aluminum alloy layer or the aluminum-containing metal layer, and a part of the aluminum alloy layer or the aluminum-containing metal layer is exposed. Then, the exposed alloy layer or a metal-containing layer is removed. Then, the patterned photoresist layer is removed. Among them, in the step of removing the patterned photoresist layer, the substrate is first cleaned with a photoresist stripper having an amine group. Next, the substrate is cleaned with an intermediate cleaning solution having metal ions. Then, the substrate was washed with deionized water. According to another object of the present invention, a substrate cleaning method is provided. The substrate has a patterned metal layer and a patterned photoresist layer formed on the patterned metal layer. The patterned metal layer is, for example, patterned. An aluminum alloy layer or a patterned aluminum-containing metal layer. First, the patterned photoresist layer is removed with a photoresist stripper having an amine group. Then, the substrate is cleaned with an acetic acid cleaning solution. Then, the substrate was washed with deionized water.
TW1037F(奇美）.ptd 第7頁 1230412 五、發明說明（4) 為讓本發明 懂，下文特舉— 明如下：TW1037F (Chimei) .ptd Page 7 1230412 V. Description of the Invention (4) In order to make the present invention understandable, the following is enumerated-as follows:
【實施 本 根離子 根離子 請 基板清 中，提 形成一 含鋁金 上。然 上。接 圖案化 後，進 化金屬 化含銘 刻之方 中，圖 trans i 線（s c 接 之上述目的、特徵、和優 較佳實施例，並配合所附圖更明顯易 町圖式，作詳細說 方式】 發明之基板清洗方法，係利用金屬办 一 結合之特性，來降低基板上之圖案化：易跟^ t 反應之機率，避免圖案化金屬層產生廒層與氫氧 參照第2 ®，其緣示乃依照本發明餘現象。 洗方法的流程圖。在第2圖中，首先又實施例之 供一其^ ^ ^ , 疋，在步驟202 金屬接著’進入步驟2〇4中， 思！ 基’此金屬層例如是-鈀合金層或-i:進其：，此金屬層係以藏鍍之方式形成於基板 ，，進入步驟2〇6中，形成一光阻層於此金屬層 者’進入步驟2 0 8中，圖案化此光阻層，以形成一 光阻層於此金屬層上，並暴露部分之金屬層。然 入步驟210中，去除暴露之金屬層，以形成一圖案 層’此圖案化金屬層例如是圖案化銘合金層吱圖幸 金屬層。其巾，在步驟m中，本使Λ 式去除暴露之金屬層，以形成圖案化金屬層。其 案化金屬層即薄膜電晶體液晶顯示器（t h i n f i 1 m stor-liquid crystal display，TFT-LCD)之掃描 an line) o 著，進入步驟2 1 2中，以一具有胺基之光阻剝離劑[Implementation of the root ion The root ion please clean the substrate and form an aluminum-containing gold. Of course. After patterning, the evolutionary metallization contains inscribed squares, and the figure trans i (sc is connected to the above purpose, characteristics, and preferred embodiments, and it is more obvious with the accompanying drawings in the easy-to-draw diagram. ] The invented substrate cleaning method uses the combination of metal and metal to reduce the patterning on the substrate: the probability of easy reaction with ^ t, and avoiding the occurrence of hafnium layer and hydrogen and oxygen in the patterned metal layer. Shown are the remaining phenomena according to the present invention. The flow chart of the washing method. In Fig. 2, the first embodiment of the present invention is provided ^ ^ ^, 疋, in step 202 the metal is then 'entered in step 204, thinking! 'This metal layer is, for example, a -palladium alloy layer or -i: into it: this metal layer is formed on the substrate by a Tibetan plating method, and it proceeds to step 206 to form a photoresist layer on this metal layer' Go to step 208, pattern the photoresist layer to form a photoresist layer on the metal layer and expose part of the metal layer. Then go to step 210 to remove the exposed metal layer to form a pattern layer 'This patterned metal layer is, for example, a patterned alloy The layer is a thin metal layer. In step m, the exposed metal layer is removed by Λ to form a patterned metal layer. The metalized layer is a thin film liquid crystal display (thinfi 1 m stor-liquid) scan of a crystal display (TFT-LCD) an line) o go to step 2 1 2 with a photoresist stripper with an amine group
TW1037F(奇美）.ptd 第8頁 1230412 五、發明說明（5) (stripper )清洗基板，以去除圖案化光阻層。其中，光 阻剝離劑例如為T 0 K - 1 0 6，且T 0 K - 1 0 6至少包括約7 0 w t %之 單乙醇胺（monoethanolamine，NH2CH2CH20H，MEA )及約 30wt% 之二甲亞石風（dimethyl sulfoxide，CH3S0CH3， DMSO )。然後，進入步驟21 4中，以一具有金屬離子 (Mn+ )之中間清洗液（i n t e r m e d i a r i n s e )清洗基板，並 去除光阻剝離劑。其中，n之值為正整數。接著，進入步 驟2 1 6中，以去離子水清洗基板，並去除中間清洗液。需 要注意的是，步驟212、214及216可以歸納為一去除圖案 化光阻層之步驟，且第2圖所示之方法流程可以視為一金 屬圖案之形成方法流程。 在本發明中，本發明所選用之金屬離子（Μη+ )具有與 氫氧根離子（OH-)高度結合成Μ(0Η)η的特性，且Μ(0Η)η具 有一溶度積（solubility product constant，Ksp)。當 M(0H)n iKsp越小時，表示金屬離子（Mn+ )傾向與氫氧根離 子（OH—)結合成Μ(0Η)η，且結合後之Μ(0Η)η將不容易解離 為金屬離子（Mn+ )及氫氧根離子（oh-)。所以，本發明之 中間清洗液之金屬離子（Mn+ )係選自於錳離子 (Mn+2 )、鋁離子（A1+3 )、鐵離子（Fe+3 )、亞鐵離子 (Fe+2 )、銅離子（Cu+2 )、鋅離子（Zn+2 )、鎂離子 (Mg+2 )、鉛離子（pb+2 )及鎘離子（cd+2 )所組成之任一 種或兩種以上之組合。且此些金屬離子（W+)與氫氧根離 子（0H-)所結合成之M(〇H)n的溶度積如下表所示··TW1037F (Chimei) .ptd Page 8 1230412 V. Description of the invention (5) (stripper) Clean the substrate to remove the patterned photoresist layer. The photoresist stripping agent is, for example, T 0 K-106, and T 0 K-106 includes at least about 70 wt% of monoethanolamine (NH2CH2CH20H, MEA) and about 30 wt% of bisparite. Wind (dimethyl sulfoxide, CH3S0CH3, DMSO). Then, in step 21, the substrate is cleaned with an intermediate cleaning solution (i n t e r m e d i a r i n s e) having metal ions (Mn +), and the photoresist stripper is removed. The value of n is a positive integer. Then, the method proceeds to step 2 16 to clean the substrate with deionized water and remove the intermediate cleaning solution. It should be noted that steps 212, 214, and 216 can be summarized as a step of removing the patterned photoresist layer, and the method flow shown in FIG. 2 can be regarded as a method of forming a metal pattern. In the present invention, the metal ion (Μη +) selected in the present invention has the characteristic of highly combining with hydroxide ion (OH-) to form M (0Η) η, and M (0Η) η has a solubility product (solubility product constant, Ksp). When M (0H) n iKsp is smaller, it indicates that metal ions (Mn +) tend to combine with hydroxide ions (OH—) to form M (0Η) η, and the combined M (0Η) η will not easily dissociate into metal ions. (Mn +) and hydroxide ion (oh-). Therefore, the metal ion (Mn +) of the intermediate cleaning solution of the present invention is selected from the group consisting of manganese ion (Mn + 2), aluminum ion (A1 + 3), iron ion (Fe + 3), and ferrous ion (Fe + 2) One or two or more of copper ion (Cu + 2), zinc ion (Zn + 2), magnesium ion (Mg + 2), lead ion (pb + 2), and cadmium ion (cd + 2) combination. The solubility products of M (〇H) n formed by the combination of these metal ions (W +) and hydroxide ions (0H-) are shown in the table below.
TW1037F(奇美）.ptd 第9頁 1230412 五、發明說明（6) M(OH)n Ksp Mg(OH)2 1.8xlOu Α1(ΟΗ)3 2xl〇-32 Fe(OH)2 8xl016 Fe(OH)3 4xl0·38 Cu(OH)2 1.6xl0·19 Zn(OH)2 1.2xl〇·17 Mn(OH)2 1.9xl013 Pb(OH)2 2.5xl0·16 Cd(OH)2 5.9xl0·15 藉由當Ksp越小時，金屬離子（Mn+ )傾向與氫氧根離 子（OH—)結合成Μ(0Η)η之故，可知當金屬離子（Mn+ )與氫 氧根離子（OH-)所結合成之Μ(0Η)η的溶度積在10_1()〜10， 範圍時，均可作為本發明選用的金屬離子（Mn+ )。 所以，即使基板上殘留有光阻剝離劑，如Τ0Κ- 1 0 6， 中間清洗液之金屬離子（Mn+ )將快速地與單乙醇胺及去離 子水所反應生成之氫氧根離子（OH—)結合成M(OH)n，且結 合後之Μ(0Η)η將不容易解離為金屬離子（Mn+)及氫氧根離 子（OH—)。如此一來，可以降低圖案化金屬層與氫氧根離 子（or )反應而產生腐蝕現象的機率。另外，本發明不需 要以DMS0為中間清洗液，可以節省購買DMS0的花費成本， 避免產生含有DMS0之廢液的工安問題，且減少廢液處理費 用，合乎經濟效益。 然熟悉此技藝者亦可以明瞭本發明之技術並不侷限在 此，例如，具有金屬離子之中間清洗液更包含去離子水。TW1037F (Chimei) .ptd Page 9 1230412 V. Description of the invention (6) M (OH) n Ksp Mg (OH) 2 1.8xlOu Α1 (ΟΗ) 3 2xl0-32 Fe (OH) 2 8xl016 Fe (OH) 3 4xl0 · 38 Cu (OH) 2 1.6xl0 · 19 Zn (OH) 2 1.2xl0 · 17 Mn (OH) 2 1.9xl013 Pb (OH) 2 2.5xl0 · 16 Cd (OH) 2 5.9xl0 · 15 The smaller the Ksp, the more the metal ions (Mn +) tend to combine with hydroxide ions (OH—) to form M (0Η) η. It can be seen that when metal ions (Mn +) and hydroxide ions (OH-) combine to form Μ (0Η) When the solubility product of η is in the range of 10_1 () ~ 10, it can be used as the metal ion (Mn +) selected in the present invention. Therefore, even if a photoresist stripper is left on the substrate, such as TOK-106, the metal ions (Mn +) of the intermediate cleaning solution will quickly react with the hydroxide ions (OH—) generated by the monoethanolamine and deionized water. Combined into M (OH) n, and the combined M (0η) η will not be easily dissociated into metal ions (Mn +) and hydroxide ions (OH-). In this way, the probability that the patterned metal layer reacts with hydroxide ions (or) to cause a corrosion phenomenon can be reduced. In addition, the present invention does not need to use DMS0 as an intermediate cleaning solution, which can save the cost of purchasing DMS0, avoid the production safety problem of waste liquid containing DMS0, and reduce waste liquid treatment costs, which is economical. However, those skilled in the art can also understand that the technology of the present invention is not limited to this. For example, the intermediate cleaning solution having metal ions further includes deionized water.
TW1037F(奇美）.ptd 第10頁 1230412 五、發明說明（7) 其中，本發明另根據酸鹼中和原理可以於步驟2 1 4中改用 醋酸清洗液來清洗基板，以去除光阻剝離劑，且其餘步驟 > 將如同第2圖所示，在此省略不再贅述。此外，醋酸清洗 液所解離產生之氫離子（H+)容易與單乙醇胺及去離子水 所反應生成之氫氧根離子（0 H—)進行酸驗中和而產生水 (H20 )，以降低圖案化金屬層與氫氧根離子（OH—)反應 而產生腐#現象的機率。 本發明上述實施例所揭露之基板清洗方法，其以具有 金屬離子之中間清洗液清洗基板的設計，一方面可以防止· 基板上之圖案化金屬層與氫氧根離子反應而產生腐#現 象；另一方面可以節省購買DMS0的花費開銷，並減少含 DMS0之廢液處理費用。 綜上所述，雖然本發明已以較佳實施例揭露如上，然 其並非用以限定本發明，任何熟習此技藝者，在不脫離本 發明之精神和範圍内，當可作各種之更動與潤飾，因此本 發明之保護範圍當視後附之申請專利範圍所界定者為準。TW1037F (Chimei) .ptd Page 10 1230412 V. Description of the invention (7) Among them, according to the principle of acid-base neutralization, the present invention can use acetic acid cleaning solution to clean the substrate in step 2 1 4 to remove the photoresist stripper. And the remaining steps > will be as shown in Fig. 2 and will not be repeated here. In addition, the hydrogen ions (H +) generated by the dissociation of the acetic acid cleaning solution are easily neutralized with the hydroxide ions (0 H-) generated by the reaction of monoethanolamine and deionized water to produce water (H20) to reduce the pattern. Probability that the metallized layer reacts with hydroxide ions (OH—) to produce a rot # phenomenon. The substrate cleaning method disclosed in the above embodiments of the present invention, the design of which cleans the substrate with an intermediate cleaning solution having metal ions, can on the one hand prevent the patterned metal layer on the substrate from reacting with hydroxide ions to produce a rot # phenomenon; On the other hand, it can save the cost of purchasing DMS0, and reduce the disposal cost of waste liquid containing DMS0. In summary, although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Retouching, so the scope of protection of the present invention shall be determined by the scope of the attached patent application.
TW1037F(奇美）.ptd 第11頁 1230412 圖式簡單說明 【圖式簡單說明】 第1圖繪不乃傳統之玻璃基板清洗方法的流程圖。 第2圖繪示乃依照本發明之較佳實施例之基板清洗方 法的流程圖。TW1037F (Chimei) .ptd Page 11 1230412 Simple illustration of the drawing [Simplified illustration of the drawing] The first diagram is a flowchart of the traditional glass substrate cleaning method. FIG. 2 shows a flowchart of a substrate cleaning method according to a preferred embodiment of the present invention.
TW1037F(奇美）.ptd 第12頁TW1037F (Chi Mei) .ptd Page 12
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