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TWI229861B - Multi-stack optical data storage medium and use of such a medium - Google Patents

Multi-stack optical data storage medium and use of such a medium Download PDF

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Publication number
TWI229861B
TWI229861B TW091111468A TW91111468A TWI229861B TW I229861 B TWI229861 B TW I229861B TW 091111468 A TW091111468 A TW 091111468A TW 91111468 A TW91111468 A TW 91111468A TW I229861 B TWI229861 B TW I229861B
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TW
Taiwan
Prior art keywords
layer
recording
stack
data storage
optical data
Prior art date
Application number
TW091111468A
Other languages
English (en)
Inventor
Erwin Rinaldo Meinders
Hermanus Johannes Borg
Guo-Fu Zhou
Johannes Cornelis Norb Rijpers
Original Assignee
Koninkl Philips Electronics Nv
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Publication of TWI229861B publication Critical patent/TWI229861B/zh

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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description

1229861
本發明關於-種多堆疊光學資料健存媒體，用於藉由一 聚焦的雷射光束來可覆寫地記錄，該媒體具有一基板，其 一側邊沉積有： 八 -一包含有一相變形式的記錄層之第一記錄堆疊，該第一 記錄堆疊係存在最為遠離於該聚焦的雷射光束， -至少另-第-記錄堆叠包含_相變形式的記錄層， -一透明的間隔層，其每個相鄰於另一個記錄堆疊，1係 位在最靠近該第一記錄堆疊之侧彡，料明層之厚度大於 該聚焦的雷射光束之焦距深度。 本發明亦關於使用這種多堆疊光學資料儲存媒體在高資 料速率記錄應用。 ' 在該公開文獻中所提到的該種光學資料儲存媒體之具體 實施例，其可由本申請人所立案的美國專利案號us 6，190,750中所揭示。 . 一種基於該相變原理之光學資料儲存媒饉很引人注意， 因為其結合了該直接覆寫（D0W)及具有簡易相容於唯讀光 學資料儲存系統之高儲存密度之可能性。在此文中的資料 儲存包含數位視訊-、數位音訊-及軟體資料儲存。相變光學 記錄牽涉到使用一聚焦的相當高功率雷射光束在一結晶記 錄層中形成次微米大小的非晶性記錄標記。在記錄資訊期 間，該媒體係相對於該聚焦的雷射光束來移動，其係根據 要記錄的該資訊來調變。標記係在當該高功率雷射光束熔 化該結晶記錄層時所形成。當該雷射光束切換為關閉，及/ 或後續相對於該記錄層來移動，該溶化標記的淬火會發生 -4- 本纸張尺度適用中國國家標準<CNS) A4規格(210 X 297公釐） 1229861 A7 B7
五、發明説明（2 在該記錄層中，留下一非晶性資訊標記在該記錄層的曝露 區域中’其在該未曝露的區域中維持結晶。寫入的非▲性 標記之抹除係藉由重新結晶來實現，其透過利用在相同的 一較低功率位準之雷射來加熱，而不會熔化該記錄層。該 非晶性標記代表該資料位元，其可利用一相當低功率聚焦 的雷射光束例如經由該基板來讀取。該非晶性標記相對於 3玄結晶3己錄層之反射性差異引起一調變的雷射光束，其後 續根據該記錄的資訊來由一偵測器轉換到一調變的光電流。 在相變光學記錄中最重要的需求之一為一高資料速率， 其代表該資料可利用至少30 Mbits/s之使用者資料速率來寫 入或覆寫在該媒體中。這種高資料速率需要在D〇w期間該 記錄層具有一高結晶速率，即一短結晶時間。為了保證先 前記錄的非晶性標記可在DOW期間重新結晶，該記錄層必 須具有一適當的結晶速率來匹配於相對於該雷射光束之媒 體速度。如果該結晶速率不夠高，來自先前記錄的該非晶 性仏5己’代表售負料’其在D 0 W期間不能夠完全抹除，代 表重新結晶。此造成一高雜訊位準。一高結晶速率在該密 度記錄及該資料速率光學記錄媒體中特別需要，例如在碟 形的 CD-RW 高速、DVD-RW、DVD+RW、DVD-RAM、 DVR-紅及藍，其分別為已知的光碟及新世代的高密度數位 多功能碟片+RW及-RAM之縮寫，其中RW及RAM代表這種 碟片的可覆寫性，及數位視訊記錄光學儲存碟片，其中紅 及藍代表該使用的雷射波長。對於這些碟片，該完整的抹 除時間（CET)必須低於30 ns。CET係定義為一抹除脈衝的最 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 1229861 A7 B7
五、發明説明（ 用於可覆寫相變 的媒體具有一| IP2[M2l+丨S丨IPJI^ |結構， 的光學穿透率。I代表一介電層，r 及P2代表相變記錄層，而s代表一 構中，該雪射氺击杰；隹人靖禍白么 記錄，其具有兩個金屬反射層Ml及Μ”其分別為相當地 厚，而具有一高光學反射，並相當地薄，而具有一相當高 代表另一個介電層。 透明的間隔層。在此結 泮火該非晶性相之快速冷卻。該 稱t，該雷射光束先進入通過包含h之堆疊。該金屬層不 僅做為一反射層，但也做為一散熱器，以保證在寫入期間 P 1層係出現在靠近一相 當厚的金屬鏡面層Ml，其造成記錄期間該Ρι層的實質冷卻 而4 P2層係出現在靠近一相當薄的金屬層,其具有有 限的散熱特性。一記錄層的冷卻行為很大地決定了記錄期 間的正確形成非晶性標記。其需要充份的散熱動作，藉以 保證在記錄期間之適當的非晶性標記形成。 在4已知的媒體中，該金屬層]VI；2不可避免地阻隔該雷射 光的一實質部份，而造成在該Pi層處的一降低的記錄功率 。其使用另一個介電層1+ ，其結合於該層m2，藉此增加該 M2層的穿透率。該金屬層M2為充份的散熱動作所需要。此 另一個介電層單獨之熱傳導性仍出現為過低，因此其能夠 快速地降低該記錄層中的溫度的能力即不夠。由於該雷射 光的部份阻隔’其需要該Pi記錄層之實質上較高的寫入功 率。此代表其需要相當大量的雷射光功率來成功地寫入或 覆寫資料在該光學資料儲存媒體中，特別是在高資料速率 ，其需要相對於該雷射光束為一較大的媒體速率。在較大 的寫入及覆寫速率下，其需要更高的雷射光功率。在大部 本紙張尺度適用中® ®家標準(CMS) A4規格(210 X 297公董) 1229861 A7 _一― ______B7 五、發明説明（5 ) ~ " -— 份狀況下，其使用半導微+似七立 又川干导體雷射來產生該雷射光束。特 在較短的雷射光波長下，例如柄於 ^ 1 J戈低於700 nm，那些雷射的^ 大雷射功率係有限的，並造点古^々本 I k成同5己錄功率的一障礙。再 ，大雷射功率較佳地是要避免，因為相鄰於該第一記錄堆 疊的其它記錄堆疊會不想要地被該雷射光束所加熱，其係 聚焦在該第-記錄堆疊的該記錄層上。當未使用金屬層％ 時’該層P2的冷卻行為實質上不同於該層匕的冷卻行為。2 由於此不同，在該層1>2中以一給定的資料速率寫入的方式 實質上不同於該層Pl。#由寫入，例如可代表一脈衝或寫 入策略。其甚至不可能在一足夠高的資料速率下以一相當 低的冷卻行為來成功地寫入在一疊層中。換言之··該非晶 性秫圮形成由於該P層的緩慢冷卻速率而高度地抵消，其允 許實質上的重新結晶。 本發明之一目的在於提供在該公開文獻中所描述的該種 多堆疊光学資料儲存媒體，其具有至少另一個記錄堆疊， 其實質上透明於一雷射光束，藉以允許相當低功率寫入在 一下方的記錄堆疊中，且其具有一充份的散熱動作，藉以 保證適當地形成非晶性標記在該另一個記錄堆疊之記錄層 中0 此目的係由至少一銦錫氧化物（IT0)層存在於至少該記錄 堆疊之一來達到。 本發明係基於體認到一 ΙΡΙΤ堆疊的穿透率大致僅由該ρ層 之穿透率所決定。Τ代表該ΙΤΟ層，而I及Ρ分別代表一介電 層及一相變記錄層。一金屬層，其不可避免地阻隔該雷射 -8- 本紙張尺度適用中國a家標準(CNS) Α4規格(210 X 297公釐） 1229861 五、發明説明（6 份’其並不存在。由於該IT〇層的存在充份的散 ,、.、動作存在於該記錄堆#中。ITQ為—透㈣料， 相當高的導電性’例如做為液晶顯示器(LCD)中一透電極 益而經常❹。使㈣⑽為在光學記錄堆疊中具有高= =材料尚未可知。由於本發明’用於寫入在下方記錄 堆豐的該雷射光功率會明顯地降低，例如其量最高到約5〇%。 在根據本發明該光學資料儲存媒體之具體實施例中該 IT〇層存在於至少另—個記錄堆疊中，其係位在最接近於相 鄰一透明間隔層之第一記錄堆疊之侧邊上。 在架構上，以下的結構可代表該具體實施例·· I ΐΡηΐτη丨sn丨iPdiTd | Sn-1 | ···丨ΙΡιη。該雷射光首先進入 通過第η個堆疊。該IPlI堆疊係為第一記錄堆叠，Sn為一透 明間隔層，IPnITn為第π個記錄堆疊，且其中j、p及τ具有 上述的意義。其必須提到其有可能有許多該多堆疊設計等 級的記號、。有時候多堆疊設計係由Ln所代表，其中n代表〇 或一正整數。該雷射光進入通過的該第一堆疊稱為b，而 每個較深的堆疊係由L!..Ln所代表。較深可瞭解於係在該進 入雷射光束的方向上。在此文件中，其使用另一個記號， 其中該最深的堆疊具有下標1。 在另一具體實施例中，另一個IT〇層存在於另一個包含一 ιτ〇層的另一個記錄堆疊中，該另一個ΙΤ〇層係存在於相對 於該ΙΤΟ層側邊的另一個記錄堆疊的一側邊。在架構上此可 由以下的結構來代表·· I TnIPnITn I Sn I IVJPwIIV丨 | Sn·丨 I ....IIP丨I卜 -9- 本紙張尺度適用中s困家標準(CNS) Λ4規格（210X297公#) 裝 訂 線 ...Ϊ A7 B7
1229861 五、發明説明（7 依此方式，一對稱的堆疊可利用一散熱層形成在該記錄層 的兩側上。此好處在於該冷卻行為可更為對稱地分佈其 、成更佳地寫入及抹除泫記錄層中的非晶性標記。 在一較佳的具體實施例中，另一個IT〇層係存在於最靠近 該另一個記錄堆疊之側邊處的該第一記錄堆疊中，而一金 屬反射層係存在於最遠離該另一個記錄堆疊之側邊處的該 己錄堆f中。因為該第一記錄堆疊為最後一個堆疊，其中 該雷射光到達一不透明金屬反射層，其可存在而增強該光 學資料儲存媒體之整體反射。再者，該金屬層將做為該第 一記錄堆疊之良好的散熱器。 在一先則具體實施例的改良中，該金屬反射層係由一 ITO 層所取代。當該P層本身具有一充份的反射性，該金屬層可 由IT0層取代。該好處為該第一記錄堆疊之冷卻行為係實 質上等於另一個記錄堆疊之冷卻行為，.其中ιτ〇層可存在於 相同的組辑中。依此方式，該第一及其它記錄堆疊之寫入 及抹除特性實質上相等。再者，由一經濟性的觀點，刪除 金屬層較佳。對於該第一記錄堆疊的該金屬反射層，其 可使用像是 Α 卜 Ti、Au、Ni、Cu、Ag、Rh、pt、pd、犯、
Co Mn及Cr，及这些金屬的合金。適當合金的範例為 、A1Cr&A1Ta。Ag由於其高熱傳導性而較佳。此金屬反射 層的厚度並非關鍵，但較佳地是該穿透率為零來得到最大 反射率。為了實際的理由，該厚度約為1〇()nm。 較佳地是，該ITO層之厚度範圍為5到2⑻nm。一太薄的 疊層不會呈現充份的散熱動作，而一太厚的疊層可劣化該 -10- 本紙張尺度適用中國國家搮準(CNS) A4^7i1〇X297公釐)
裝 訂
1229861
記錄堆疊的光學穿透率。再者，一厚的疊層較為昂貴來沉 積。 在較佳的具體實施例中，該記錄層係接觸於至少一額外 層，其包含由 Al2〇3、SiC、Si3N4、MgO、ZnO 及 Ain 所構 成的群組中選出的一化合物，其包含其非化學計量組成， 。亥額外層具有一最大厚度為1〇nm。這些疊層在D〇w期間增 加該非晶性標記的結晶速率，其直接造成一較高可能的資 料速率。在這些疊層之間的介面及該記錄層做為一成核來 源，用於該非晶性標記的結晶。該額外層具有一相當小的 厚度。因此，該額外層對於該記錄層中熱量傳導到該Ιτ〇層 的能力僅具有一相當小的影響。換言之，該ΙΤ〇散熱動作幾 乎不會被該額外層所改變。 該記錄層較佳地是包含該元素&及Te。該記錄層為該相 變形式。一相變材料顯示一結晶-非晶性相轉變。，進_步有 用的是化舍物 In-Sb-Te、Te-Se-Sb、Ag-In-Sb-Te、Ge-Sb-Te 、Ge-In-Sb-Te或Ge-Te。特別有用地是該化合物描述在該 國際專利申請案W0 01/13370及W0 97/50084中，其皆為申 清人所立案。在WO 97/50084中的化合物具有一組成，其由 以下公式中原子百分比所定義：
Ge50XSb40_40xTe60]0x，其中0.166 < X < 0.444.這些組成係位 在該三角形Ge-Sb-Te構成圖中連接該合成物GeTe及Sb2Te3 之線上，並包含該化學計量化合物Gejbje5 (χ=〇·444)、 GeSb2Te4 (χ=0.2 86)及 GeSb4Te7 (χ=0·166)。這些化合物顯示 出一短的結晶（抹除）時間。 -11 - 本紙張尺度適用中阐國家標準(CMS) Α4規格（210 X 297公釐） 1229861 A7 __ _ B7 五、發明説明（9 ) 在W0 01/13370中的化合物具有一組成，其由以下公式中 原子百分比所定義：
Qa Inb Sbc Ted (在原子百分比中），其中 Q係由Ag及Ge所構成的群組中選出， 2 < a < 8 0 < b < 6 55 < c < 80 15<d<30 及 a + b + c + d= 100。 較佳地是，另一個記錄堆疊之記錄層之厚度在5及25 nm 之間。一較厚的疊層將造成穿透率過低。該第一記錄堆疊 的該記錄層可為較厚，例如在5及50 nm之間。 在所有記錄堆疊中，一介電層在遠離於該基板之該相變 記錄層之側邊，其保護該記錄層不會受到該通常為有機的 間隔層之影響，並最佳化該光學對比。由此光學對比的觀 點’此層的厚度較佳地是限制在（7〇 + χ/2η) nm，其中λ為 該雷射光束的波長’而η為該介電層的折射率。 在該第一記錄堆疊中，該記錄層與該較佳的金屬折射層 之間的介電層係在1 〇到50 nm之間，較佳地是在2〇到4〇 nm之間。當此疊層太薄時，該記錄層與該金屬反射層之間 的絕熱會受到不利的影響。因此，該記錄層的冷卻速率即 增加其會造成不良的結晶過程’及可能一不良的循環性 。該冷卻速率將因增加該介電層的厚度而降低。一相當厚 的介電層為較佳，藉以增加該第一記錄堆疊的該記錄層之 敏感度。 -12- 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐） 1229861 A7 B7
五、發明説明 該介電層I較佳地是由 〜此，Sr、初製成，巧如 (ZnS — ^OAo該疊層亦可由Si〇2、Ta2〇5、丁叫、μ製成 ，其包含它們的非化學計量組成。 在該第一及另一個記錄堆疊之間的透明間隔層之厚度大 於该雷射光束的焦距深度，例如1 〇 μπι。此厚度可保證該第 一及第二記錄堆疊係光學地解耦合，即一聚焦在妖第二記 錄堆疊之記錄層上的一雷射光束並不讀取/寫入資訊到另一 個記錄堆疊m依此方式，該儲存容量即相對於 一單一疊層的資料儲存媒體而增加。該間隔層的材料為， 例如一紫外線硬化的丙烯酸鹽黏結劑，其中伺服軌跡可由 一複製處理來提供。 該貪料儲存媒體的基板係至少對於該雷射波長為透明， 其由例如聚碳酸酯、聚甲基甲基丙烯酸酯（pmma)、非晶性 聚烯烴或玻璃所製成。該基板的透明性僅在該雷射光束經 由該基板的進入面進入到該記錄堆疊時才需要。在一典型 範例中，該基板為一碟形，其直徑為120 mm ,厚度為〇 6或 1.2 nm。該基板在當該雷射光束由經由相對於該基板的側 邊之側邊進入該堆疊時，可為不透明。 在該記錄堆疊側邊上該碟形基板的表面較佳地是具有一 伺服執跡，其可以光學地掃描。此伺服軌跡通長由一螺旋 狀的溝槽所構成，並在射出成型或衝壓期間由一模具形成 在該基板中。這些溝槽另可在一複製處理中形成在該間隔 層的該合成樹脂令，例如一紫外光可硬化的的丙烯酸醋。 可視需要，該堆疊的最外層可藉由例如一紫外光硬化的 -13- 本紙張尺度適用中固國家標準(CNS) A4規格(21〇 X 297公釐） 1229861 A7 B7 五、發明説明（11 ) 聚（甲基）丙烯酸酯的保護層來由該環境所遮蔽。該保護層必 須有良好的光學品質，即實質上無光學像差及實質上厚度 為均勻’當該雷射光經由該保護層進入該記錄堆疊時。在 此例中’該保護層係透明於該雷射光。 在該記錄堆疊的記錄層中記錄及抹除資料可藉由使用一 短波長雷射來達到，例如利用一波長為66〇 nm或較短（纟工 藍）。 '
違金屬反射層及該介電層皆由蒸鍍或噴濺所提供。 該ITO層可由喷濺或由濕式化學方式來提供。 裝 該相變記錄層可由真空沉積來應用到該基板上。已知的 真二/儿積處理為蒸鍍（電子束蒸鍍，來自一坩鍋的耐熱蒸鍍） 三噴濺、低壓化學汽相沉積（CVD)、離子電鍍、離子束輔助 条鍍、電漿增強CVD。正常的熱CVD處理由於過高的反應 溫度而無法應用。 圖式簡單說明 訂
本發明將藉由範例性具體實施例及參考所附圖式來詳細 說明，其中 圖1到3所示分別為根據本發明一多堆疊光學資料儲存媒 體之具體實施例的架構性橫截面圖。 圖4所不為利用一習用的寫入策略在一 ιρΐΜ堆疊之DvR· 藍條件下寫入的一非晶性標記之計算尺寸之平面圖。 圖5所不為利用一習用的寫入策略在一 ιρι堆疊之-藍 條件下寫入的一非晶性標記之計算尺寸之平面圖。 圖6所不為利用一習用的寫入策略在一 τιριτ堆疊之dvR· -14-
1229861 A7 ________B7 五、發明説明（12 ) 藍條件下寫入的一非晶性標記之計算尺寸之平面圖。 發明詳細說明 在圖1中，所示為藉由一聚焦的雷射光束3〇進行可覆寫記 錄之多堆疊光學資料儲存媒體20之具體實施例。該媒體具 有一由聚碳酸酯（PC)所製成的基板i，其一側邊上沉積有·· -一包含一相變形式記錄層6之第一記錄堆疊2。該第一記 錄堆疊2係距離該聚焦的雷射光束3〇最遠。 -一第二記錄堆疊3，其包含一相變形式的記錄層12。 -一相鄰於該第二記錄堆疊3之透明間隔層9,其位在最靠 近該第一記錄堆疊2之側邊。該透明層間隔層9之厚度為3〇 μιη，其大於該聚焦的雷射光束3〇之焦距深度。 該第一記錄堆疊之記錄層6包含具有原子組成 Ge5.〇In5.5Sb65.〇Te24.5之化合物，其厚度為1〇 。一金屬反 射層4存在於該第一記錄堆疊2中，其位在最遠離該第二記 錄堆疊3之側邊處。該金屬反射層4包含該金屬Ag,其厚度 為100 nm。一介電層5 ,其厚度為25 nm，其存在於該記錄 層6與該金屬反射層4之間。該介電層5包含該化合物 (ZnS)8G(Si〇2)20。一銦錫氧化物（ITO)層8，其厚度為130 nm ’其存在於該第一記錄堆疊中，位在最靠近該第二記錄堆 疊3的側邊處。 该第二記錄堆疊3之記錄層12包含具有原子組成 GeuInuSbw.oTeMj之化合物，其厚度為6 nm。一銦錫氧 化物（ITO)層10，其厚度為80 nm，其存在於該第二記錄堆 疊3，位在最靠近相鄰於該透明間隔層9之第一記錄堆疊2之 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 1229861 A7 ___ B7 五、發明説明（13 ) 側邊處。另一個ITO層14，其厚度為100 nm，其存在於該第 二記錄堆疊3中，位在相對於該ITO層1〇之側邊之第二記錄 堆疊3之側邊處。兩個介電層11及丨3，其厚度皆為20 nm， 並皆由（ZnS)8〇(Si02)2〇製成，其係存在接觸於該第二記錄 堆疊3的該記錄層12。 ·〆 一保護層1 5，其例如由一雷射光透明紫外線可硬化樹脂 製成，其厚度為ΙΟΟμιη，其存在相鄰於該另一個ιτο層14。 旋塗及後續的紫外線硬化可提供層15。該保護層1 5亦可藉 由施加例如一壓力敏感黏結劑（PSA)層的一聚碳酸酯（PC)板 來提供。該第一記錄堆疊2的光學反射，其波長為670 nm， 且當該記錄層6為非晶性相時，其係定義成Ra ，其數值為 1.4%。該記錄堆疊2的光學反射，其波長為670 nm，且當該 記錄層6為結晶相時，其係定義成R。，其數值為28 7%。該 光學對比為95·2%〇該光學對比係定義成丨Re - Ra丨/ Rmax ， 其中公式Rmax為Rc或1的最大值。對於該第二記錄堆疊3 ’這些數值為Ra= 3· 1 %， Rc= 14.4%及該光學對比為 78.6%。該第二記錄堆疊3的穿透率在波長為67〇 nm下，當 該記錄層在非晶性相時為52·2% (Ta)，當該記錄層在結晶 相時為 39.0% (Tc)。 在圖2中’所示為藉由一聚焦的雷射光束3〇進行可覆寫記 錄之多堆疊光學資料儲存媒體2〇之另一具體實施例。 該第一記錄堆疊2之記錄層6包含具有原子組成
Ge5.〇In5 5Sb65.〇Te24 5之化合物，其厚度為1〇ϊ1ΙΏ。一金屬反 射層4存在於該第一記錄堆疊2中，其位在最遠離該第二記 -16- 紙張尺度適用中國國家標準(CNS) A4規格X 297公釐)— 1229861 A7 一_______B7 五、發明説明（14 ) 錄堆疊3之側邊處。該金屬反射層4包含該金屬Ag，其厚度 為100 nm。一厚度為25 nm之介電層5，其存在於該記錄層 與該金屬反射層之間。另一個介電層7,其厚度為13〇 nm, 其存在於該第一記錄堆疊2，其位在最靠近該第二記錄堆疊 3之側邊。兩個介電層皆包含該化合物（ZnS)8Q(Si〇2)2Q。 該第二記錄堆疊3之記錄層12包含具有原子組成 GeuInuSbw.oTQu之化合物，其厚度為6 nm。一銦錫氧 化物（ITO)層10，其厚度為1〇〇 nm，其存在於該第二記錄堆 疊中，其位在最靠近相鄰於該透明間隔層之第一記錄堆疊 之側邊處。一介電層11，其厚度為20 nm，由（ZnS)80(Si〇2)20 製成’其存在於該ITO層1〇與該第二記錄堆疊3之記錄層12 之間。另一個介電層13存在於該第二記錄堆疊3的該記錄層 12之另一側邊處。該保護層1 5與該基板1係相同於圖1之說 明中所述。該第一記錄堆疊2之光學反射當該記錄層6處於 非晶性相時之波長為670 nm，其係定義為Ra ，其數值為 2.0%。該記錄堆疊2之光學反射當該記錄層6處於結晶相時 之波長為670 nm，其係定義為R。，其數值為3〇 8%。該光 學對比為93.5%。該光學對比定義如上述。對於該第二記錄 堆疊3，這些數值為Ra= 4.8%， Rc=16.9%及該光學對比為 72.0%。該第二堆疊3的穿透率在波長為67〇 nm下，當該記 錄層12在非晶性相時為5 1.0% (Ta)，當該記錄層12在結晶 相時為 37.5% (Tc)。 在圖3中，所示為藉由一聚焦的雷射光束3〇進行可覆寫記 錄之多堆疊光學資料儲存媒體2〇之另一具體實施例。該記 -17- 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐）
裝 訂
k 1229861 A7 B7 五、發明説明（17 ) 圍所列出之外的元件或步驟。在一元件之前的該用語「一」 並不排除複數個這種元件的存在。唯一的事實為在彼此不 同的相關申請專利範圍所引用的某些度量並不代表不能為 了較佳的用途而使用這些度量的組合。 根據本發明，其提供了藉由一聚焦的雷射光束用於可覆 寫記錄之一多堆疊光學資料儲存媒體。該媒體具有至少兩 個包含一相變形式記錄層之記錄堆疊。該記錄堆疊除了最 後滿足該雷射光束的該記錄堆疊之外，具有該雷射光束的 一高透明度，並結合了在該堆疊中該記錄層的良好冷卻行 為。此可在至少存在於靠近該高度透明記錄堆疊之記錄層 之一個ITO層中達到。 -20- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐）

Claims (1)

  1. A8 BS C8 D8 鸭卵齡fl 11468號專利申請案 ;中專利範圍替換本(93年6月） 申請專利範圍 1· -種多堆疊光學資料儲存媒體(2〇)，用於藉由一聚焦的 雷射光束（30)來可覆寫地記錄’該媒體（2。）具有一基板 (1 )，其一側邊沉積有： _ 一包含有一才目變形式的1己錄層⑹之第-記錄堆疊 (2) ’該記錄堆疊⑺係存在最為遠離於該聚焦的雷 射光束（30)， _至少另一第一記錄堆疊（3)，其包含一相變形式的 記錄層（12)， 田-一透明的間隔層（9),其每個相鄰於另一個記錄堆 疊（3)，其係位在最靠近該第—記錄堆疊⑺之側邊，該 透明間隔（9)層之厚度大於該聚焦的雷射光束⑽之焦距 深度， 其特徵為至少一銦錫氧化物層（1〇)存在於至少另一個 記錄堆疊（2, 3)中。 2·如申請專利範圍第1項之光學資料儲存媒體（2〇)，其中 該銦錫氧化物層（10)係存在於至少另外記錄堆疊中的一 個，其位在最靠近相鄰於一透明間隔層之該第一記 錄堆堃（2)之側邊處。 3·如申請專利範圍第1或2項之光學資料儲存媒體（2〇)，其 中另一銦錫氧化物層（14)存在於該另一個包含該銦錫氧 化物（10)之記錄堆疊中，該另一個銦錫氧化物層（14)係 存在於相對於該銦錫氧化物（丨0)之側邊的另一個記錄堆 疊（3)之側邊處。 4·如申請專利範圍第1或2項之光學資料儲存媒體（2〇),其 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公
    r另 卿测物虱化物層（8)係 ，其位在最接近於該另(一):=亥第-記錄堆疊中 5. 6. -金屬反射層（4)係存在於兮f(3)之側邊處，且 丄η 土 、弟一记錄堆疊（2)中，J：位 在最达離該另-個記錄堆疊(3)之側邊處。 、 f申：專利範圍第4項之光學資料儲存媒體(20)，其中 5亥金屬反射層⑷係由-銦錫氧化物層所取代。 如申請專利範圍第1或2項之光學資料儲存媒體㈣，里 中該銦錫氧化物層(8，10，14)之厚度範圍在5到2〇 間。 7. 如申請專利範圍第1或2項 #風：欠貝之九學貧料健存媒體（2〇),並 中該記錄層(6, i2)係接觸於至少_額外層(5，，7，，u:， 13 ) ’ 其包含由 AI2O3、SiC、f μ3 ml Sl3N4、MgO、ΖϋΟ及 AIN所構成的群組中所選出的一化合物，其中包含它們的非 化學計量之組成，該額外層(5，，7，，"’，13，)之最大厚度 為 10 nm 〇 8·如申請專利範圍第1或2項之光學資料儲存媒體⑽，其 中該記錄層（6, 12)包含該元素Ge及Te。 9· -高資料速率光學記錄方》，其特徵在於如精專利範 圍第1或2項之多堆疊光學資料餘存媒體。 -2- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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CN1511318A (zh) 2004-07-07
KR20030024818A (ko) 2003-03-26
EP1407451A1 (en) 2004-04-14
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