1228281 玖、發明說明： 【發明所屬之技術區域】 本發明係關於一種電漿處理裝置，特別是關於一種利用 藉由將微波導入室内所形成的電漿生成區域對基板施以一 定處理之電漿處理裝置。 【先前技術】 近年’伴隨半導體裝置之高密度化及微細化，於半導體 裝置之製程中，為實施成膜、餘刻、灰化等處理而使用電 漿處理裝置。特別是於使用微波而讓電漿產生之微波電漿 處理裝置中，即使於約O.hiO Pa之壓力較小（高真空）條件 下，亦可穩定地使電漿產生。因此，例如使用頻率為2.45 GHz之微波之微波電漿處理裝置受到注目。 說明關於這種先前電漿處理裝置。如圖6所示，電漿處理 裝置係具有收容基板115而實施一定處理之室1〇1、產生微 波之高頻率電源109、將微波導入到電漿處理裝置之導波管 119、及將微波放射於室ιοί之天線部1〇7。 天線部107係具有於導波管119下端被接續之金屬製之輻 射狀導波路l〇7a及覆蓋輻射狀導波路1〇7下端開口之圓板 狀之狹縫天線l〇7b。於狹缝天線i〇7b上方之與導波管119對 向之位置上，設置有為執行調整阻抗之凸出部108。又，於 導波路1〇7&内存在有大氣。 狹縫天線1 〇7b係由例如厚度為〇· 1 mm至數mm程度之銅 度而形成。於狹縫天線107b設置有為將微波向室101内放射 之複數狹縫（開口部）。 84684.doc 1228281 於室101$ 土方，配置有構成室101之隔壁一部分之頂板 105。頂板115係由例如石英等之介電體形成。於頂板105與 室101之隔壁之間，設置有例如〇型環等之密封配件113。天 線部107於頂板105上方隔有一定間隔被配置，於天線部1〇7 與頂板105之間，形成空氣層12〇。 於室101内設置有為保持基板Π5之基座103。於此基座 103接續有偏壓用高頻電源in。再者，於室内，安裝有 將室101内排氣用之真空泵（未圖示）。 於上述之電漿裝置中，利用真空泵將室1〇1内排氣，作為 於一定壓力範圍下生成電漿用之氣體，將例如氬氣導入室 101 内。 由南頻電源109產生之TE11模式之微波，利用圓極化波轉 換器（未圖示）讓其於導波管119軸線周圍旋轉而在導波管 119傳導’到達天線部1〇7之輕射狀導波路i〇7a。 到達輻射狀導波路l〇7a之微波向輻射狀導波路1〇7a之周 、’彖方向傳播。向周緣之方向傳播之微波透過狹缝天線1 〇7b 於室101内讓電磁場產生。 氬氣因產生於室101内的電磁場而解離，於基板115與頂 板105之間形成電漿生成區域，執行一定之電漿處理。 但於先前之電漿處理裝置中具下之問題點。首先，到達 輻射狀導波路l〇7a而向輻射狀導波路i〇7a之周緣方向傳播 <微波被輻狀導波路107a之内周面反射，於輻狀導波路 107a内形成有第i駐波。 又，由於由狹缝天線107b被放射之微波與微波被生成於 84684.doc 1228281 室101内電漿生成區域反射而回來之微波的相互結合，因此 於頂板105與空氣層12〇之區域内形成第2駐波。 室101内之電漿生成區域成為由上述之第1駐波與第2駐 波之相互結合所維持。此時，於第1駐波與第2駐波之相互 結合較弱之時，於電漿生成區域之維持上，第2駐波之影響 有支配控制之傾向。 另一方面，此第2駐波有基於室1〇1内之壓力、導入室内 之氣體之種類、或供給之電力量等之製程條件而容易變動 之傾向。 且說，如圖6所示，第1駐波係取波於輻射狀導波路丨07a 之内徑P A與被供給之微波模式所形成，而第2駐波係取決於 頂板105、空氣層120位置之區域之内經pb與電漿之狀況所 形成。 再者，於第2駐波之形成上，由於被電漿生成區域反射而 回來之微波亦有關，所以亦取決於電漿生成區域之大小。 電漿生成區域之大小被室101之内徑PC限制。因此，第2駐 波亦取決於室101之内徑PC所形成。 但疋於過去之電聚處理裝置’輕射狀導波路1 〇 7 a之内徑 PA，頂板105與空氣層120位置之區域之内徑PB，以及室1〇1 之内徑PC被任意設定，故隨各PA、PB、PC之尺寸，於電漿 生成區域之維持上，第2駐波之影響有時具支配性。 如上述，第2駐波容易隨室1〇1内之壓力等製程條件變動 。因此，於電漿生成區域之維持上，若如此不安定之第2駐 波之影響具支配性，控制形成電聚生成區域用之電磁波變 84684.doc 1228281 為困難。 若電磁場之控制變困難，於室1〇1内备 比、 門θ有電漿密度偏差之 十月況。其結果，於基板面㈣電聚處理程度會產生偏差， 例如有蝕刻速度或成膜速度偏差之問題。㈢ 二 【發明内容】 本發明係為解決上述之問題點而設 括不胳士私 直其目的係提供一 種電漿處理裝置，其控制形成電漿生 私水玍成£域之電磁場， 成電漿密度均勻之電漿生成區域。 與本發明相關之電漿處理裝置，係 、、 作將基板暴露於電 水生成區域並施與一定處理，且古会 屣理具有至、頂板部與天線部。 於室内收容基板。頂板部被配置於被導人室内之基板之上 方，構成室之隔壁之一部分。天績郜茲 土 大、、杲邵精由於罜内供給高頻 電磁場，於室内之頂板部盥基板邱 …丞扳4 <間 < 區域内形成電漿 生成區域。其天線部含具―定内徑之輻射狀導波路。室於 頂板部與天線部位置之部分，具有4之内徑。設其輻狀 導波路之内徑為A、頂板部與天線部位置之部分之内徑為6 基於頂板α卩之介電常數與頂板部與天線部位置之部分之 工間〈介电吊數《合成介電常數之高頻電磁場之波長為、 。則設定成大約滿足下式（B-A)/2=(V2)· Ν。又，Ν4〇或 自然數遂有於此關係式中，^/1〇程度之尺寸誤差被解釋 成滿足此關係。 基於此構造’藉由將各内徑設定成實質上滿足上述關係 ，於輕射狀導波内被形成之第1駐波與於頂板部與天線部位 置之部分被形成之第2駐波之相位一致，第丨駐波與第2駐注 84684.doc 1228281 之相互結合較過去之電漿處理裝置之情況強。基於此，於 電漿生成區域之形成維持上，第m波之影響具有支配性。 其总果為电漿生成區域之形&維持可由天線部加以控制， 因而降低電漿密度之偏差。 又，室於面臨電漿被形成之區域之部分具有一定之内徑 ，若設定面臨電漿被形成之區域之部分内徑為C，則設定成 大約滿足下式cs A為佳。且於此關係式中，；^/1〇程度之尺 寸誤差亦被解釋成滿足此關係。 這疋因為被認為内徑C較内徑A大之情況下，於室内被形 成之電漿生成區域會變更大，隨此電漿生成區域，頂板部 之介電常數與空間之介電常數之合成介電常數之值會與電 漿之狀況共同變化而不能滿足上述之關係，不能增強第^駐 波與第第2駐波之相互結合之故。 位於第2駐波被形成之區域之頂板部具體而言，以含石英 板等介電體為佳。 【實施方式】 說明與本發明之實施型態相關之電漿處理裝置。如圖i 所不’電浆處理裝置包含有·收容基板15而實行一定處理 之室1、產生微波用之高頻電源9、將微波導入到電聚處理 裝置用之導波管19及將微波放射入室1内用之天線部7。 天線部7具有於導波管19下端被接續之金屬製之輕射狀 導波路7a與被覆輻射狀導波路7a之下端開口之圓板狀之狹 縫天線7a。於狹缝天線7b上與導波管19呈相對之位置上設 置為調整阻抗之凸出部8，又，於導波路7a内有大氣存在。 84684.doc -9- 1228281 狹缝天線7b係由例如Ο· 1 mm至數mm程度之銅板等所形 成。於此狹縫天線7b設置將微波向著室1内放射之複數狹缝 (開口部）。 於室1之上方配置有構成室1之隔壁一部分之頂部5。頂板 5係由例如石英等所形成。頂板5與室1之隔壁之間，例如設 置有例如Ο型環等之密封配件13。天線部7於頂板5上方隔開 間隔被配置，於天線部7與頂板5之間形成空氣層20。 於室1内設置有為保持基板15用之基座3。於此基座3接續 有偏壓用之南頻電源11。再者，於室内丨安裝置有將室 排氣用之真空泵（未圖示）。 於本電漿處理裝置，頂板5及天線部7位置之區域之内徑B 與輻射狀導波路7a之内徑A之差之一半長度成為^員板5及天 線邵7位置之區域之基於大氣（空氣層2〇)之介電常數與頂板 5之介電常數之合成介電常數的微波波長、之一半長度之 包含〇之自然整數倍。即，成為大約以下式表示之尺寸關係。 (Β-Α)/2=(λ§/2) · N (N: 0或自然數） 再者，室1之内徑C比輻射狀導波路7&之内徑人短地被設 定’或如後述’内徑C與内徑A相同。又，於ΝΛ〇之情況係 内徑Α與内徑Β實質上相等之情況。又，於上述之尺寸關係 式，λ8/10程度之尺寸誤差被解釋成滿足此關係。 其次說明祕上述之電聚處理裝置之動作。首先，利用 真，栗將室1内排氣。作為於—定之壓力範圍下為生成電浆 之氣體’將例如氬氣導入室1内。 藉由高頻電源9’作為微波’產生圓極化波ΤΕ·式之微 84684.doc 1228281 理之均勻。 揭示之實施形態於所有之點均係例示，應被認為 疋者。本發明並非為上述之說明，而為專利申 請範圍所顯示，意圖是包與申 範圍内之所有變更。、^專利_均等之意義及在 產業上利用之可能生 本發明係關於—種電漿處理裝置，其㈣藉由於室内， 導;:微波形成之生成區域錢，對基板施錢刻或成膜等 一疋的電漿處理，可有效被高 於_形成電漿生成區域 <私磁％如升電漿密度均一性之構造。 【圖式簡單說明】 圖1係本發明之實施形能 %輯理裝置之剖面圖。 圖2係顯示於本實施形態 之微波旋轉之圖。 ㈣電漿處理裝置之動作 圖3係顯示於本實施形態 之駐波樣子之剖面圖。巾為說明電裝處理裝置之動作 圖4係顯示於本實施能 之於輕射狀導波路内旋轉:駐波= 圖電聚處理裝置之動作 面Γ系於本實施型態中關於變形例之電聚處理裝置之剖 圖6係先前電聚處理裝置之剖面圖。 【圖式代表符號說明】 101 室 3, 103 基座 84684.doc -14- 1228281 5, 105 頂板 7, 107 天線部 7a，107a 輻射狀導波路 7b， 107b 狹缝天線 8, 108 凸出部 9, 109 南頻電源 11 TE模式 13, 113 密封配件 15, 115 基板 17 電聚生成區域 19, 119 導波管 20, 120 空氣層 21 微波 Y 導波管19之軸線周圍之箭頭所示方向 A 輻射狀導波路7a之内徑 B 頂板5及天線部7位置之區域中之内徑 C 室1之内徑 L 内徑B與内徑A之差之一半長度之部分 SI 第1駐波 S2 第2駐波 111 偏壓用高頻電源 PA 輻射狀導波路l〇7a之内徑 PB 頂板105與空氣層120位置之區域之内徑 PC 室101之内徑 84684.doc -15-1228281 发明 Description of the invention: [Technical area to which the invention belongs] The present invention relates to a plasma processing device, and more particularly, to a plasma that applies a certain treatment to a substrate by using a plasma generation area formed by introducing a microwave into a room. Processing device. [Prior art] In recent years, with the increase in the density and miniaturization of semiconductor devices, plasma processing devices have been used in the process of semiconductor devices to perform processes such as film formation, etching, and ashing. Especially in a microwave plasma processing apparatus that uses a microwave to generate plasma, even under a low pressure (high vacuum) condition of about 0.1 HPa, the plasma can be stably generated. Therefore, for example, a microwave plasma processing apparatus using a microwave having a frequency of 2.45 GHz has attracted attention. A description is given of such a conventional plasma processing apparatus. As shown in FIG. 6, the plasma processing apparatus is provided with a chamber 101 for accommodating a substrate 115 and performing a certain process 101, a high-frequency power source 109 for generating microwaves, a waveguide 119 for introducing microwaves into the plasma processing apparatus, and microwaves Radiation in the antenna section 107 of the room ιοί. The antenna portion 107 is a metal-made radial waveguide 107a connected to the lower end of the waveguide 119 and a circular plate-shaped slot antenna 107b covering the opening at the lower end of the radial waveguide 107. A convex portion 108 for performing impedance adjustment is provided at a position above the slot antenna i07b opposite to the waveguide 119. There is an atmosphere in the guided wave path 107. The slot antenna 107b is formed of copper having a thickness of approximately 0.1 mm to several mm, for example. A plurality of slits (openings) are provided in the slot antenna 107b to radiate microwaves into the chamber 101. 84684.doc 1228281 In the room 101 $ earthwork, a top plate 105 constituting a part of the next wall of the room 101 is arranged. The top plate 115 is formed of a dielectric such as quartz. Between the top plate 105 and the partition wall of the chamber 101, a sealing fitting 113 such as an O-ring is provided. The antenna section 107 is arranged at a certain interval above the top plate 105, and an air layer 12 is formed between the antenna section 107 and the top plate 105. In the chamber 101, a base 103 for holding the substrate UI5 is provided. A high-frequency power source in for bias is connected to the base 103. A vacuum pump (not shown) for exhausting the inside of the chamber 101 is installed in the room. In the plasma apparatus described above, the inside of the chamber 101 is evacuated by a vacuum pump. As a gas for generating a plasma under a certain pressure range, for example, argon gas is introduced into the chamber 101. The TE11 mode microwave generated by the South Frequency power supply 109 is rotated around the axis of the waveguide 119 by a circularly polarized wave converter (not shown), and conducted in the waveguide 119 to reach the antenna 107. Radial guided wave path i〇7a. The microwaves that have reached the radial waveguide 107a propagate in the direction of the periphery of the radial waveguide 107a, ''. The microwave propagating in the direction of the periphery passes through the slot antenna 107b and generates an electromagnetic field in the chamber 101. The argon gas is dissociated by an electromagnetic field generated in the chamber 101, and a plasma generating region is formed between the substrate 115 and the top plate 105, and a certain plasma treatment is performed. However, there are problems in the previous plasma processing equipment. First, it reaches the radial guided wave path 107a and propagates in the circumferential direction of the radial guided wave path 107a. ≪ The microwave is reflected by the inner peripheral surface of the radial guided wave path 107a, and an i-th standing wave is formed in the radial guided wave path 107a. wave. In addition, since the microwave radiated by the slot antenna 107b and the microwave generated by the plasma generation area reflected in the 84684.doc 1228281 room 101 are combined with each other, they are formed in the area of the top plate 105 and the air layer 12 The second standing wave. The plasma generating area in the chamber 101 is maintained by the combination of the first standing wave and the second standing wave described above. At this time, when the interaction between the first standing wave and the second standing wave is weak, the influence of the second standing wave tends to control the maintenance of the plasma generation region. On the other hand, this second standing wave tends to change easily based on process conditions such as the pressure in the chamber 101, the type of gas introduced into the chamber, or the amount of power supplied. Furthermore, as shown in FIG. 6, the first standing wave system is formed by the inner diameter PA of the radial waveguide 07a and the supplied microwave mode, and the second standing wave system depends on the positions of the top plate 105 and the air layer 120. The area is formed by the condition of pb and plasma. Furthermore, in the formation of the second standing wave, since the microwaves reflected by the plasma generation region are also related, it also depends on the size of the plasma generation region. The size of the plasma generation area is limited by the inner diameter PC of the chamber 101. Therefore, the second standing wave also depends on the inner diameter PC of the chamber 101. However, the inner diameter PA of the light-condensing guided wave path 1 007 a, the inner diameter PB of the area where the top plate 105 and the air layer 120 are located, and the inner diameter PC of the chamber 101 are arbitrarily set. Therefore, with the size of each PA, PB, and PC, in the maintenance of the plasma generation area, the effect of the second standing wave is sometimes dominant. As described above, the second standing wave easily changes with process conditions such as the pressure in the chamber 101. Therefore, in the maintenance of the plasma generation area, if the influence of such a unstable second standing wave is dominant, it is difficult to control the electromagnetic waves used to form the electropolymerization generation area 84684.doc 1228281. If the control of the electromagnetic field becomes difficult, there is an October condition in which the plasma density deviation of the gate ratio θ in the room 101 is obtained. As a result, the degree of the electropolymerization treatment on the substrate surface may vary, for example, there is a problem that the etching rate or the film-forming rate varies. ㈢ 2 [Content of the Invention] The present invention is designed to solve the above-mentioned problems. The purpose of the present invention is to provide a plasma processing device, which controls the formation of an electromagnetic field generated by the plasma to generate electricity. Plasma generation area with uniform plasma density. The plasma processing device related to the present invention is used to expose the substrate to the electro-hydrogen generation area and apply a certain treatment, and the ancient society has a top plate portion and an antenna portion. The substrate is housed indoors. The top plate portion is arranged above the substrate in the guided room to constitute a part of the partition wall of the room. As a result of the high-frequency electromagnetic field supplied by the Japanese, Japanese, Japanese, and Japanese students, the plasma-generating area is formed in the indoor ceiling board of the ceiling board. Its antenna part contains a radiating guided wave path with a fixed inner diameter. The portion of the chamber at the position of the top plate portion and the antenna portion has an inner diameter of 4. Set the inside diameter of the radial waveguide to A, and the inside diameter of the part where the top plate part and the antenna part are located. 6 Based on the dielectric constant of the top plate α 卩 and the part where the top plate part and the antenna part are located. "The wavelength of the high-frequency electromagnetic field of the synthesized dielectric constant is,. Then it is set to approximately satisfy the following formula (B-A) / 2 = (V2) · N. In addition, N40 or a natural number is included in this relationship, and a size error of about ^ / 10 is interpreted to satisfy this relationship. Based on this structure, by setting each inner diameter to substantially satisfy the above-mentioned relationship, the first standing wave formed in the light-radiated guided wave and the second standing wave formed in the portion of the top plate portion and the antenna portion are formed. The phases are consistent. The mutual combination of the first standing wave and the second standing note 84684.doc 1228281 is stronger than that of the past plasma processing equipment. Based on this, in the formation and maintenance of the plasma generation region, the influence of the mth wave is dominant. The overall result is the shape of the plasma generating area & maintenance can be controlled by the antenna section, thereby reducing the deviation of the plasma density. In addition, the part of the chamber facing the plasma formation area has a certain inner diameter. If the inner diameter of the part facing the plasma formation area is set to C, it is better to set it to approximately satisfy the following formula cs A. And in this relationship, the size error of ^ / 10 degree is also interpreted as satisfying this relationship. This is because when the inside diameter C is considered to be larger than the inside diameter A, the plasma generation area formed in the room will change greatly. With this plasma generation area, the dielectric constant of the top plate portion and the dielectric constant of the space will vary. The value of the combined dielectric constant changes with the condition of the plasma and cannot satisfy the above-mentioned relationship, and the mutual combination of the third standing wave and the second standing wave cannot be enhanced. Specifically, the top plate portion located in the region where the second standing wave is formed is preferably a dielectric material such as a quartz plate. [Embodiment] A plasma processing apparatus related to an embodiment of the present invention will be described. As shown in Figure i, the plasma processing apparatus includes a chamber for accommodating the substrate 15 and performing a certain process 1. A high-frequency power source 9 for generating microwaves, a waveguide 19 for introducing microwaves into the electro-polymerization processing apparatus, and An antenna section 7 for radiation into the room 1. The antenna section 7 has a light-radiating waveguide 7a made of metal connected to the lower end of the waveguide 19 and a circular plate-shaped slot antenna 7a opened at the lower end of the covering radial waveguide 7a. A protruding portion 8 for adjusting the impedance is provided on the slot antenna 7b opposite to the waveguide 19, and an atmosphere exists in the waveguide 7a. 84684.doc -9- 1228281 The slot antenna 7b is formed of a copper plate, for example, about 0.1 mm to several mm. A plurality of slits (openings) for radiating microwaves into the chamber 1 are provided on the slot antenna 7b. Above the chamber 1, a top portion 5 constituting a part of the partition wall of the chamber 1 is arranged. The top plate 5 is formed of, for example, quartz. Between the top plate 5 and the partition wall of the chamber 1, for example, a sealing fitting 13 such as an O-ring is provided. The antenna portion 7 is arranged at intervals above the top plate 5, and an air layer 20 is formed between the antenna portion 7 and the top plate 5. A pedestal 3 for holding the substrate 15 is provided in the chamber 1. A south frequency power supply 11 for biasing is connected to the base 3. Furthermore, a vacuum pump (not shown) for exhausting the room is installed in the room. In this plasma processing device, the half-length of the difference between the inner diameter B of the area at the position of the top plate 5 and the antenna portion 7 and the inner diameter A of the radial waveguide 7a becomes the area based on the atmosphere at the position of the member 5 and the antenna 7 The microwave wavelength of the combined dielectric constant of the dielectric constant of (air layer 20) and the dielectric constant of the top plate 5 is a natural integer multiple of one and a half length including zero. That is, it becomes approximately a dimensional relationship represented by the following formula. (Β-Α) / 2 = (λ§ / 2) · N (N: 0 or natural number) Furthermore, the inner diameter C of the chamber 1 is set shorter than the inner diameter of the radial waveguide 7 & As described later, the 'inner diameter C is the same as the inner diameter A. The case of NΛ0 is a case where the inner diameter A and the inner diameter B are substantially equal. Further, in the above-mentioned dimensional relationship expression, a dimensional error of about λ8 / 10 is interpreted to satisfy this relationship. Next, the operation of the above-mentioned electropolymerization processing device will be described. First, the inside of the chamber 1 is exhausted using a chestnut. As the gas generating plasma in a predetermined pressure range, for example, argon gas is introduced into the chamber 1. The circularly polarized wave TE · is generated by the high-frequency power source 9 'as a microwave'. 84684.doc 1228281 is uniform. The disclosed implementation form is an example at all points, and should be considered a sham. The present invention is not the above description, but is shown by the scope of the patent application, and is intended to cover all changes within the scope of the application. The meaning of the patent and the equality and the possibility of industrial utilization The present invention relates to a plasma processing device, which is used in the room to guide the formation of regional money, and the substrate is engraved or filmed with microwaves. Waiting for a long time for the plasma treatment, it can be effectively higher than the formation of the plasma generation area < private magnetic% such as the plasma density uniformity structure. [Brief Description of the Drawings] FIG. 1 is a cross-sectional view of an embodiment of the embodiment of the invention. Fig. 2 is a diagram showing the microwave rotation in this embodiment.动作 Operation of Plasma Processing Apparatus FIG. 3 is a cross-sectional view showing a standing wave state in this embodiment. Fig. 4 shows the operation of the electrical equipment processing device. Figure 4 shows the rotation in the light-emitting guided wave path in this embodiment: standing wave = Figure. The operating surface of the electrical polymerization processing device. Γ is the modification example in this embodiment. Section 6 of the electropolymerization processing device is a cross-sectional view of a prior electropolymerization processing device. [Illustration of Symbols in Drawings] Room 101, Room 3, 103 Base 84684.doc -14- 1228281 5, 105 Top Plate 7, 107 Antenna Section 7a, 107a Radial Guide 7b, 107b Slot Antenna 8, 108 Projection 9 , 109 South frequency power supply 11 TE mode 13, 113 Sealing parts 15, 115 Substrate 17 Electropolymerization generating area 19, 119 Waveguide 20, 120 Air layer 21 Microwave Y Y-waveguide 19 The direction of the arrow around the axis A Radiation Inner diameter B of the guided wave path 7a Inner diameter C in the area where the top plate 5 and the antenna portion 7 are located Inner diameter L of the chamber 1 In the half length of the difference between the inner diameter B and the inner diameter SI First standing wave S2 Second Standing wave 111 Inner diameter of high-frequency power supply PA for radial guide wave 107a Inner diameter PB Top plate 105 and inner layer 120 Inner diameter of PC room 101 Inner diameter 84684.doc -15-