TWI227927B - Method of fabricating a self-aligned contact opening and structure of a self-aligned contact - Google Patents

Abstract

A method of fabricating a self-aligned contact opening is described. A substrate having several gate structures thereon is provided. A first spacer is formed on the sidewalls of the gate structures. A dielectric layer is formed to cover the gate structures and the substrate. Etch the partial of the dielectric layer until the partial tops of the two adjacent gate structures is exposed, and also an opening is formed in the etched dielectric layer. A second spacer is formed on the sidewalls of the opening. Remove the exposed dielectric layer in the opening to form a self-aligned contact opening. Since the second spacer covers the exposed top of the gate structures before removing the exposed dielectric layer in the opening, it can avoid the gate structures being exposed.

Description

1227927 _Case No. 92125463_ Year Month Date__ V. Description of the Invention (1) Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a self-aligning contact window and self-aligning contact window. Manufacturing method of quasi-contact window opening. In the prior art, the resolution of the ultra large integrated circuit (ULSI) process has been developed to less than 0.8 microns, that is, the ratio of depth to width or diameter is getting larger and the contact windows of metals and semiconductors are getting smaller. How to overcome the increasingly smaller line widths and prevent misalignment of contact windows has become the focus of research and development in the semiconductor industry. In order to overcome the ever-smaller line width and prevent misalignment of the contact window, many semiconductor devices usually adopt a self-aligned contact (SAC) design. In particular, if the doped region in the substrate is to be electrically connected to the wire structure formed above the substrate, a self-aligned contact window design can be used to achieve it. Figures 1A to 1D show schematic cross-sectional views of the manufacturing process of a conventional self-aligned contact window opening. Referring to FIG. 1A, a substrate 100 is provided. A plurality of gate structures 1 10 having a cap layer 108 have been formed on the substrate 100, and each gate structure 1 1 0 further includes a gate. The dielectric layer 102, the polycrystalline silicon layer 104, and the silicided metal layer 106 are the polysilicon layer 104 and the silicided metal layer 106 are gate conductive layers. Thereafter, a silicon nitride spacer 1 12 is formed on the sidewall of the gate structure 110. Next, please continue to refer to FIG. 1A to form a barrier layer 1 13 on the substrate 100 between two adjacent gate structures 1 110. After that, on the substrate 1 0 0

Page 8 1227927 _Case No. 92125463_ Year Month Date__ V. Description of the Invention (2) Deposit a silicon oxide dielectric layer 1 1 4 to cover the gate structure 1 1 0 and the barrier layer 113 °. Figure 1 B. After forming a patterned polycrystalline stone hard mask layer 1 1 6 on the dielectric layer 1 1 4, the hard mask layer 1 1 6 is used as the mask, and the dielectric layer 1 is etched by the insect. 1 4. It is worth noting that when the dielectric layer 1 1 4 a is gradually removed and the top of the top cap layer 108 is exposed, the silicon oxide dielectric layer (1 1 4 and 1 1 4 a) is not suitable for nitride nitride. The contact ratio of the top cap layer 108 and the silicon nitride spacer 1 12 is not high enough (approximately 10 to 20), so when this etching process is continued, part of the top cap layer 108 and The partition wall 1 1 2 is removed (as shown in Fig. 1 C). Referring to FIG. 1D, the steps of etching the dielectric layer 114 are continued to form self-aligned contact window openings 120. Thereafter, the barrier layer 1 1 3 located in the self-aligning contact window opening 1 2 0 is removed. It is worth noting that when the etching process continues, the problem of removing the cap layer 108 and the spacer wall 1 12 will become more and more serious, and it may even make the gate electrode below the cap layer 108 The conductive layers (the polycrystalline silicon layer 104 and the silicided metal layer 106) are exposed. Thus, when a conductive material is subsequently filled in the self-aligning contact window opening 120 to form a self-aligning contact (not shown), the self-aligning contact window and the exposed gate conductive layer (polycrystalline silicon layer) will be caused. 104 is short-circuited with the silicided metal layer 106). Although the above problems can be solved by forming a thicker cap layer 108, in the case of the current process line width becoming narrower and narrower, this will increase the aspect ratio of the opening of the contact window. This results in more process constraints. Summary of the Invention

Page 9 1227927 _Case No. 92125463_year month_ charm_ V. Description of the invention (3) In view of this, the object of the present invention is to provide a self-aligning contact window and a method for manufacturing a self-aligning contact window opening. In order to solve the problem that during the self-aligning contact window opening process between two adjacent gate structures, part of the top of the cap layer may be exposed, which may cause the lower gate conductive layer to be exposed during the etching process. Exposed, causing short-circuit problems.

The invention proposes a method for manufacturing a self-aligned contact window opening. This method first provides a substrate on which several gate structures have been formed. Each of the gate structures includes a gate dielectric layer, a gate conductive layer and Top cover. After that, a first gap wall is formed on a sidewall of these gate structures. Then, a dielectric layer is formed over the substrate to cover these gate structures and the substrate. Next, a part of the dielectric layer is etched until the top of a part of the capping layer between two adjacent gate structures is exposed, and an opening is formed in the etched dielectric layer. Next, a second gap wall is formed on the side wall of the opening, and the material of the second gap wall is, for example, different from that of the dielectric layer. Thereafter, the exposed dielectric layer is removed from the opening to form a self-aligned contact window opening.

The present invention proposes a self-aligning contact window. The self-aligning contact window includes a plurality of gate structures, a dielectric layer, a first spacer wall, a second spacer wall, and a conductive layer. Among them, several gate structures are arranged on the substrate, and each of the gate structures has a gate dielectric layer, a gate conductive layer, and a cap layer. In addition, the dielectric layer covers these gate structures, and the dielectric layer has a self-aligned contact window opening to expose the area between two adjacent gate structures. In addition, the first gap wall is disposed in a self-aligned contact window opening.

Page 10 1227927 _ Case No. 92125463 _ Month and Day __ V. Description of the invention (4) The side walls of these gate structures. In addition, the second spacer is disposed on a side wall of the dielectric layer in the self-aligned contact window opening, and the material of the second spacer is, for example, different from that of the dielectric layer. In addition, the conductive layer fills this self-aligning contact window opening. In the present invention, since the process of etching the dielectric layer to form the self-aligned contact window opening is divided into two steps, and between these two steps, a second gap wall is formed to cover the bare cap layer. top. Therefore, during the second etching step of the dielectric layer (removing the exposed dielectric layer in the opening), the cap layer of the gate structure is less easily removed. Therefore, it is possible to avoid the problem that the gate conductive layer may be exposed due to the removal of the cap layer, and it is also possible to avoid the short circuit caused by the self-aligned contact window and the gate conductive layer formed later. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are described below in detail with the accompanying drawings as follows: Embodiments The following is a method for manufacturing an interconnect. The self-aligning contact window opening process of the present invention is described, but the present invention is not limited thereto. Figures 2A to 2F are schematic cross-sectional views showing the manufacturing process of an interconnector according to a preferred embodiment of the present invention. Referring to FIG. 2A, the manufacturing method of the interconnect in the present invention firstly provides a substrate 2 0, and a plurality of gate structures 2 1 0 have been formed on the substrate 2 0. Among them, each gate structure 210 includes a gate dielectric layer 202, a gate conductive layer 206, and a cap layer 208. Moreover, in a preferred embodiment, the gate is conductive

1227927 _Case No. 92125463_ Year Month__ V. Description of the Invention (5) The layer 2 0 6 is composed of a polycrystalline silicon layer 2 0 4 and a silicided metal layer 2 0 5. Among them, the material of the gate dielectric layer 202 is, for example, silicon oxide, the material of the cap layer 208 is, for example, nitride nitride, and the material of the stone-plated metal layer 205 is, for example, stone-plated crane or stone-plated Of titanium. After that, please continue to refer to FIG. 2A to form a gap wall 2 1 2 on the side wall of these gate structures 2 1 0. The method for forming the partition wall 2 12 is to first form a conformal partition wall material layer (not shown) on the substrate 2000. The material of the partition wall material layer is, for example, silicon nitride. It is then formed by anisotropic etching.

In addition, in a preferred embodiment, after forming the spacers 2 12, the method further includes forming a barrier layer 213 on the surface of the bare substrate 200 to protect the substrate 200. The material of the barrier layer 2 1 3 is, for example, silicon oxide or nitride nitride.

Next, please continue to refer to FIG. 2A to form a dielectric layer 2 1 4 on the substrate 200 to cover the gate structures 2 1 0 and the barrier layer 2 1 3. The material of the dielectric layer 2 1 4 is, for example, silicon oxide. In another preferred embodiment, the material of the dielectric layer 2 1 4 is, for example, composed of a doped silica glass layer (borophosphosilicate glass) 2 1 5 and an undoped silica glass layer (silicon oxide) 2 1 7 The dielectric layer 2 1 4 is formed by, for example, first forming a doped silica glass layer 215 using a chemical vapor deposition method to cover the gate structure 210 and the barrier layer 213. Then, a planarization process is performed to remove a part of the doped silica glass layer 2 15 and the top of the gate structure 2 10 is exposed. The planarization process is, for example, a chemical mechanical polishing method. After that, an undoped silica glass layer 2 1 7 with better insulation effect is formed on the doped silica glass layer 2 1 5 by a chemical vapor deposition method. Of which

1227927 on page 12 _ case number 92125463 _ year month day__ V. Description of the invention (6) The reaction gas used to form the undoped silica glass layer 2 1 7 is, for example, tetra ethyl vinegar (tetra — ethyl — ortho — Silicate (TEOS for short), and the thickness formed is, for example, about 2500 Angstroms. Then, please continue to refer to FIG. 2A to form a patterned hard mask layer 2 1 6 on the dielectric layer 2 1 4. The material of the hard cover curtain layer 2 1 6 is, for example, a material having a different etching selection ratio than that of the dielectric layer 2 1 4.

The thickness is, for example, about 850 angstroms. The formation method is formed by first forming a hard mask material layer (not shown) on the dielectric layer 2 1 4 and then performing a lithography etching process. Of course, in a preferred embodiment, a patterned photoresist layer (not shown) may be formed on the dielectric layer 2 1 4, and the photoresist layer is used as an etching mask for a subsequent etching process. Next, please refer to FIG. 2B. The hard mask layer 2 1 6 is used as the etching mask, and the dielectric layer 2 1 4 is etched to the top cover between the adjacent two gate structures 2 1 0. A part of the layer 208 is exposed at the top, and an opening 2 2 0 is formed in the etched dielectric layer 2 1 4 a.

Subsequently, referring to FIG. 2C, a conformal spacer material layer 2 2 2 is formed on the dielectric layer 2 1 4 a and the opening 2 2 0 to cover the surface and top of the exposed dielectric layer 2 1 4 a. The top of the cover layer 2 0 8 and the hard cover curtain layer 2 1 6 surface. The material of the spacer material layer 2 2 2 is, for example, different from the material of the dielectric layer 2 1 4 a, but may be the same as the material of the spacer 2 1 2, for example, silicon nitride. Of course, the material of the spacer material layer 2 2 2 may also be the same as that of the dielectric layer 2 1 4a, such as silicon oxide. In addition, the thickness of the formed spacer material layer 2 2 2 is, for example, between 200 and 300 angstroms. After that, referring to FIG. 2D, the spacer material layer 2 2 2 is etched back to

Page 13 1227927 _ Month Amendment Case No. 92125463 V. Description of the Invention (7) Keep the spacer material layer 2 2 2 on the side wall of the opening 2 2 0 to form the spacer 2 2 4 ′ and the spacer 2 2 4 It covers the top of the exposed cover layer 208. Next, referring to FIG. 2E, the exposed dielectric layer 2 1 4 a ′ in the opening 2 2 0 is removed to form a self-aligning contact window opening 2 between two adjacent gate structures 2 1 〇. 2 6. The method for removing the dielectric layer 2 1 4 a is, for example, an etching process. After that, the hard cover curtain layer 2 1 6 is removed. It is worth mentioning that, before the step of removing the exposed dielectric ^ 2 1 4 a in the opening 220, the spacer 4 is covered on the top of the exposed cap layer 2 08, so when the dielectric layer is removed 2 丨 ", it can reduce the probability of the top cover layer 2 8 being removed. In other words, the gate conductive layer top cover layer 208 located under the top cover layer 208 is less likely to be removed, so it will not be exposed. Therefore, it can be known that the gate conductive layer and the self-aligned contact window shorting device formed later. 1. In the preferred embodiment, if the spacer 2 2 4 and the dielectric layer 2 丨 4 a have a high etching option Compared with that, the probability that the cap layer 2 08 is removed is even greater than 2, and in a preferred embodiment, the material of the partition wall 2 2 4 is, for example, Shi Xi and the material of the dielectric layer 2 1 4 a For example, it is oxidized stone. As shown in FIG. 9, in another preferred embodiment, if the material of the dielectric layer 214 includes a doped glass layer 215 (borophosphosilicate glass) and an undoped silicon glass layer (Fossil evening), then the steps of making the 2D to 2E steps are two non-doped silica glass layers 2 1 7 to etch to expose the adjacent: Part of the top cover layer 2 0 8 between the structures 2 0. Then / the side wall of the undoped silica glass layer 2 1 7 a in the opening 2 2 0 forms a spacer 2 2 4. Remove doped silica glass between two gate structures 2 1 0

1227927 _ Case No. 92125463_ Year Month__ V. Description of the invention (8) The above description is the manufacturing process of the self-aligned contact window opening of the present invention. Of course, the following processes can be continued in the future to complete the interconnection process. The detailed description is as follows. Referring to FIG. 2F, after removing the barrier layer 2 1 3, a conductive material is filled in the self-aligning contact window opening 2 2 6 to form a self-aligning contact window 2 2 8. Among them, the conductive material is, for example, metal tungsten or polycrystalline silicon, and the method of filling the conductive material is, for example, forming a conductive material on the dielectric layer 2 1 4 b (or the undoped silicon glass layer 2 1 7 a). And the conductive material at least fills the self-aligned contact window opening 2 2 6, and then removes conductive materials other than the opening 2 2 6 by an etch-back method or a chemical mechanical polishing method.

In addition, in another preferred embodiment, the spacer 2 2 4 is removed before the step of self-aligning the contact window opening 2 2 6 with a conductive material.

Then, please continue to refer to FIG. 2F to form a wire structure 2 3 0 on the dielectric layer 2 1 4 b (or undoped silica glass layer 2 1 7 a), and the wire structure 2 3 0 is self-aligned. The quasi-contact window 2 2 8 is electrically connected. The method for forming the lead structure 230 is, for example, a damascene process. The metal damascene process is, for example, forming another dielectric layer (not shown) on the dielectric layer 214b (or the undoped silica glass layer 217a). The dielectric layer has trenches (not shown), The self-aligning contact window 2 2 8 is exposed. Then, fill the trench with a layer of wire material (not shown). The material of the wire material layer is, for example, a wire material such as tungsten or copper. Next, a layer of wire material other than the trench is removed by chemical mechanical polishing. In addition, in another preferred embodiment, the formation method of the wire structure 2 3 0

Page 15 1227927

Correct ____ ΐ 21Ξ iv on the dielectric, 214 b (or non-doped Shixi glass layer 2 1 7 a) to form φ ,, 'said (not shown)' to cover the self-aligned contact window 2 2 8. The second -ϊK material layer is a wire material such as tungsten or aluminum. # 着 ， Carry out the etch process to define the wire structure 2 3 0.

= The following is a description of the present invention based on the interconnect structure obtained in FIG. 2F = ^ = The structure of the alignment contact window. Please refer to FIG. 2F. This interconnection structure includes the structure of the self-aligned contact window and the wire structure 23 of the present invention. The structure of the self-aligned contact window includes a plurality of gate structures 21, a dielectric layer 214b (or an undoped silica glass layer 2117a), a spacer wall (212 and 2 2 4), and a conductive layer 2 2 8. In addition, these gate structures 21 include a gate dielectric layer 202, a silicon layer 204, a silicide metal layer 205, and a cap layer 208, and a polycrystalline silicon layer 204 and a silicide metal layer. 2 0 5 is an interfacial conductive layer 2 06. Among them, a plurality of gate structures 21 are arranged on the stomach 200. In addition, the μ electrical layer 2 1 4 b (or the undoped silicon glass layer 2 1 7 a) covers these gate structures 210, and the dielectric layer 214 b (or the undoped silicon glass layer 217 a) has a self-alignment. The quasi-contact window opening 2 2 6 exposes an adjacent area between the two gate structures 2 1 0. In addition, the partition wall 2 1 2 is a side wall of the gate structures 2 1 0 arranged in the self-aligned contact window opening 2 2 6. The material of the partition wall 2 1 2 is, for example, nitride stone.

In addition, the spacer 2 2 4 is a side wall of the dielectric layer 214 b (or undoped silica glass layer 217 a) disposed in the self-aligned contact window opening 2 2 6 and covers the bare top cover layer 2 0 8 the top of. The material of the spacer 2 2 4 is, for example, different from the material of the dielectric layer 214b (or the undoped stone layer 217a), but may be the same as the material of the spacer 2 1 2 '. For example, it is nitrided stone. Clearance

Page 16 1227927 __Case No. 92125463_Year_Month__ V. Description of the invention (10) The material of the wall 224 may also be the same as that of the dielectric layer 214b (or undoped silica glass layer 217a), which is Silicon oxide. In addition, the conductive layer 2 2 8 fills the self-aligning contact window opening 2 2 6 and serves as a self-aligning contact window. The material of the conductive layer 2 2 8 is, for example, a conductive material such as metal tungsten or polycrystalline silicon. In addition, for an interconnect structure, the wire structure 2 3 0 is further disposed on the dielectric layer 2 1 4 b (or the undoped silica glass layer 2 1 7 a), and the wire structure 2 3 0 is related to The conductive layers 2 2 8 are electrically connected. The material of the lead structure 230 is, for example, a lead material such as tungsten, aluminum, or copper. In the present invention, since the process of engraving the dielectric layer 2 1 4 to form the self-aligned contact window opening 2 2 6 is divided into two steps, and a gap wall 2 2 is formed between the two steps. 4 to cover the top of the bare top cover 208. Therefore, when the second etching step of the dielectric layer 2 1 4 is performed (removing the exposed dielectric layer 2 1 4 a in the opening 2 20), the cap layer 2 0 8 of the gate structure 2 10 Less easily removed. Therefore, the problem that the conductive conductive layer of the gate may be exposed due to the removal of the cap layer 2 08 can be avoided, and the subsequent self-aligned contact window 2 2 8 and the conductive short layer of the gate can be avoided. . In addition, in the present invention, since the top of the bare cap layer 208 is covered with a gap wall 2 2 4, even if the thickness of the cap layer of the gate structure is thin, the conventional problem that the conductive layer of the gate is exposed will not occur. . Therefore, the present invention can use a thinner capping layer to reduce the aspect ratio of the contact window opening, which can reduce the limitation of the aspect ratio on the manufacturing process. In addition, the above-mentioned manufacturing method can be applied not only to the interconnection process of general devices, but also to memory devices to make doped regions in the substrate.

Page 17 1227927 _ Case No. 92125463_ Year Month Date__ V. Description of the invention (11) The electrical connection between the contact window and the upper bit line is made by self-aligning the contact window. If the above process is applied to a memory device, the above-mentioned conductive structure 230 is a bit line, and the above-mentioned self-aligned contact window (or conductive layer) 2 28 is a bit line contact window. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the attached patent application.

Page 18 1227927 _Case No. 92125463_Year Month Day__ Brief Description of Drawings Figures 1A to 1D are cross-sectional schematic diagrams of the manufacturing process of a conventional self-aligned contact window opening. Figures 2A to 2F are schematic cross-sectional views showing the manufacturing process of an interconnect according to a preferred embodiment of the present invention. [Schematic mark description]

1 0 0, 2 0 0 · Base 1 0 2, 2 0 2: gate dielectric layer 1 0 4, 2 0 4: polycrystalline silicon layer 1 0 6, 2 0 5: petrified metal layer 1 0 8, 2 0 8: Cap layer 1 1 0, 2 1 0: Gate structure 1 1 2, 2 1 2, 2 2 4: Spacer wall 1 1 3, 2 1 3: Barrier layer 114, 114a, 214, 214a, 214b: Dielectric layer 1 1 6, 2 1 6: Hard cover curtain layer 1 2 0, 2 2 6: Self-alignment 揍, touch window opening 2 0 6: Gate conductive layer 2 1 5: Doped silica glass layer 2 1 7, 2 1 7 a: undoped silica glass layer

220 open a 222 gap wall material layer 228 white line contact window (conductive layer) 230 wire structure

Page 19

Claims (1)

1227927 _ Case No. 92125463_ 年月 日 _ί ± ^ _ VI. Scope of Patent Application 1. A method for manufacturing a self-aligned contact window opening, comprising: providing a substrate on which a plurality of gate structures have been formed, Each of the gate structures includes a gate dielectric layer, a gate conductive layer, and a capping layer; a first gap wall is formed on a sidewall of the gate structures; a dielectric layer is formed over the substrate To cover the gate structures and the substrate; part of the dielectric layer is engraved until the top of a portion of the capping layer of two of the adjacent gate structures is exposed, and An opening is formed in the electrical layer; Forming a second gap wall on a side wall of the opening; and removing the dielectric layer exposed in the opening to form a self-aligned contact window opening. 2 · The method for manufacturing a self-aligned contact window opening as described in item 1 of the scope of patent application, wherein the material of the second spacer is different from the material of the dielectric layer. 3. The method for manufacturing a self-aligned contact window opening as described in item 2 of the scope of patent application, wherein the material of the second gap wall is the same as that of the first gap wall. 4. The method for manufacturing a self-aligned contact window opening as described in item 3 of the scope of patent application, wherein the material of the second spacer is silicon nitride. 5. The method for manufacturing a self-aligned contact window opening as described in item 1 of the scope of patent application, wherein the material of the second spacer wall is the same as that of the dielectric layer. Page 20 1227927 _Case No. 92125463_ Year Month Date__ VI. Patent Application Range 6. The manufacturing method of self-aligning contact window openings as described in item 5 of the patent application range, wherein the material of the second gap wall is For silicon oxide. 7. The method for manufacturing a self-aligned contact window opening according to item 1 of the scope of patent application, wherein the forming method of the second spacer comprises: forming a conformal spacer on the dielectric layer and the opening. A material layer to cover the exposed surface of the dielectric layer and the top of the capping layer; and etch back the spacer material layer to retain the spacer material layer on the side wall of the opening to form the second spacer, And the second gap wall covers the top of the exposed capping layer. 8. The method for manufacturing a self-aligning contact window opening as described in item 7 of the scope of patent application, wherein the thickness of the spacer material layer is between 200 and 300 Angstroms. 9. The manufacturing method of self-aligning contact window openings as described in item 1 of the scope of patent application, after the step of forming the first gap wall on the side walls of the gate structures, and forming the dielectric layer over the substrate Before the step, the method further includes forming a barrier layer on the exposed substrate, and after the step of removing the dielectric layer under the opening, the method further includes removing the barrier layer to expose the substrate. 10. The method for manufacturing a self-aligned contact window opening as described in item 1 of the scope of patent application, wherein the method for forming the dielectric layer includes: Forming a first dielectric material layer on the substrate to cover the substrate and the gate structures; performing a planarization process to remove a portion of the first dielectric material layer and making the gate structures The top is exposed; and Page 21 1227927 Case No. 92125463 Amended on 6th, Haigu ° Covered with layer material ^ β 2 Second Circumstance 1 Fan Chengli Special Application Please apply for the description of the layer material dielectric ο Circumference Fanli Specially asked Zhongrua, some of the silicon glass poles, the other layers of the material, the dielectric layer of the material, the material, the electrical intermediary, the second method, and the method, and the glass structure of the glass gate structure and The material of the first self-aligned contact window includes a doped and an undoped silicon glass seed window, and the number of quasi-parallel junction gates is overlaid on the substrate-the placement layer is electrically and conductively connected The gate is a gate, some layers are covered by the electric cover, and a layer is provided with a dielectric structure. The adjacent phase is exposed to the storm D. The window is opened. The first pole, the second pole, the first pole, the first gate, the second gate, the second gate, the second gate, the second gate, the second gate, the second gate, the second gate, the second gate, the first gate, the second gate, the second gate, and the second gate Describing f ^ ^ ^ Haixiang Gukou g 2 and 3 1 Department 1 The first spoiled fence material Fan Fan J's spear affairs I Spear special gap Qing Qinggu 0 _ Gukoujianzhongzhong D 卩 1 卩 • 第 · 3 HAI4 1 古 " 1 According to the application, such as the gap, the special month, the main month, and the main month ^ -0 The description of the Lidiqia and the phylogeny of the ancient wall is nitrogen. A cap layer; the dielectric layer has one of the two gate structure contact window openings in the contact window opening. Align the contact window by yourself. The material of the contact window is different. Align the contact window by yourself. The material of the gap wall is the same. Self-align the contact window, self-align the contact window, Page 22 1227927 Case No. 92125463 Amendment 6. Scope of patent application Where the material of the second spacer is the same as that of the dielectric layer. 17. The self-aligning contact window described in item 16 of the scope of patent application, wherein the material of the second partition wall is silicon oxide. metal Page 23