TWI227521B - Polishing element - Google Patents

Abstract

A polishing element comprising a polishing platen, a polishing sub-pad and a polishing pad is provided. The polishing sub-pad is set up over the polishing platen and the polishing pad is set up over the polishing sub-pad. A first surface of the polishing sub-pad interfaces with the polishing pad and a second surface of the polishing sub-pad interfaces with the platen. Either the first surface or the second surface of the polishing sub-pad is an undulating surface.

Description

1227521

V. Description of the invention (1) The technology of MAN AA The present invention relates to a grinding member, which can improve the abrasive cloth type (fixed heart · special) 疋 About a rate of grinding :: ⑽ Grinding A of chemical mechanical grinding method The solution of the previous method: The size of the legacy component in the process of Γ continues to shrink, and the depth of the exposed surface of the micro-micro is fluctuated. Relying on chemical mechanical polishing ^ 曰 来 固-二; Γ anisotropic grinding properties in addition to the wafer surface wheel: = = can also be used for vertical and horizontal metal interconnecting wheel contour ( jnterconnects) of the mosaic structure, the production of components in the previous process, micro-electromechanical ΓΓ flat, for shallow trench isolation, and so on. It is one of the important mechanical and mechanical polishing processes of the chemical mechanical polishing process. Two = the grinding canal isolation junction method is removed on the active area nitrogen cutting = using two) of = mechanical grinding method, ρ has been effective. The oxidized stone will cause the problem of dishing and shing. Therefore, near :: within = :: Π f a kind of abrasive cloth-type chemical mechanical polishing method that does not require polishing liquid ', the abrasive particles have the function of grinding, this method ik' lies in the grinding selection ratio of oxygen cutting to nitrogen cutting, And 1 flat ±

11486twf.ptd Page 7 1227521 V. Description of the invention (2) The planization efficiency is good, and it can effectively reduce the phenomenon of dishing of oxide stones in shallow trenches. Fig. 1 is a schematic diagram of a scraped surface of a conventional abrasive cloth type abrasive member. Please refer to FIG. 1. A conventional abrasive cloth-type polishing member is formed by sequentially stacking a polishing platen 130, a polishing pad 120, and a polishing pad 110. The polishing pad 1 10 is an abrasive cloth polishing pad, and the polishing pad is composed of a binder and abrasive particles uniformly distributed in the binder. In the polishing process using this polishing member 100, the object to be polished (not shown in the figure) on the wafer is pressed against the polishing pad, and then the wafer and the polishing pad are pressed. Relative movement occurs for grinding. However, the above abrasive cloth-type polishing member 100 has the following application. When the surface of the object to be ground is flattened, the surface of the object to be ground is also flat due to the grinding process. In addition, it is difficult for you to grind the original material to reduce the stickiness in the polishing pad 110, so that the grinding rate of the object to be polished will be fast and large residues will remain. It is said that the object to be ground cannot be effectively removed and caused to be ground m ja. After the shallow trench isolation and flattening of the circle made of hibiscus, it is used in the application of η μ〃〃 衣 为了, in order to avoid air grinding). # There is still too thick flattened silicon oxide (the oxide on the researched% is less than a predetermined value), y W degrees (〇 ”1'131 ^ (1611) must be controlled to make the fi 11) process wide The production is f, which makes the oxide silicon trench fill (gap visibility crossed to the limit. 1227521 V. Description of the invention (3) Too much, also in the application of the shallow trench isolation structure process, = meters and sub-90 nm In terms of the shallow trench isolation structure process, the width of the f process is getting smaller and smaller. Therefore, the above-mentioned active region silicon nitride I will often exceed the predetermined height 'so that it may be combined ^ = reduce the problem with oxidized women' Making abrasive cloth: chemically difficult to apply to 90 nm and sub-90 nm shallow isolation structure processes. Rong Wang. Therefore, the purpose of the present invention is to provide an abrasive member to improve the abrasive rate of the abrasive cloth chemical mechanical polishing method. Is to provide an abrasive component ^ At the same time as the polishing rate of the cloth-type chemical mechanical polishing method, the load effect during polishing is also provided. ^ ^ Another object of the present invention is to provide a polishing member and apply the sand Z-type chemical mechanical polishing method to a shallow trench isolation structure. During the manufacturing process, the processing width of the shallow trench isolation structure process is sufficiently large, and the abrasive cloth type mechanical polishing method can be applied to the process of the shallow trench isolation structure with a smaller size. The present invention provides a grinding member, the grinding member system It consists of a polishing pad and a polishing pad. The polishing pad is arranged on the second polishing pad, and the polishing pad is arranged on the polishing pad, wherein the polishing pad is in contact with the polishing pad with two first surfaces, and The polishing pad has a second surface in contact with the 2 grinding discs, and at least one of the first surface and the second surface is a concave-convex surface. The present invention proposes another polishing member, which is composed of a polishing < , A polishing pad and a polishing pad. The polishing pad is arranged in the research ^ vf.ptd page 9 1227521 V. Description of the invention (4) 'The polishing pad is arranged in the research on the grinding disc On the polishing pad, the polishing pad is in contact with the polishing pad with a first surface, the polishing pad is in contact with the polishing pad with a second surface, the polishing pad is in contact with the polishing pad with a third surface, and the polishing The disc is in contact with the polishing pad with a fourth surface, wherein one of the first surface, the first surface, the second surface, and the fourth surface is an uneven surface. Also, in the above-mentioned polishing member, the polishing pad is The first surface and the second surface of the pad are both uneven surfaces with height difference. The present invention provides a polishing disc, which is suitable for forming a polishing member with a polishing pad and a polishing pad, wherein the polishing disc has a main ridge, And this polishing disc is in contact with the polishing pad on one surface, and this surface is on the surface. Q μ ϋ The polishing pad and polishing disc of the hair polishing pad set are concave The polishing pad of the hair polishing pad set is concave In the present case, its composition clearly proposes a one-to-one grinding system with a first contact and a convex surface. Ming proposed to grind a surface and a surface. 'In the above, the unevenness and the various types of polishing principles' are applicable to a polishing disc and a member, wherein the polishing pad has a body, and this surface is in contact with the polishing pad, and a second surface and, at least One of the first surface and the second surface, and a grinding surface, and the grinding surface is the same type of polishing pad as the convex structure of the polishing structure, which is suitable for contacting a polishing disc member, wherein the polishing pad has a main polishing pad contact , Characterized in that the surface of the grinding pad, grinding pad, and grinding disc is composed of a plurality of grooves and a plurality of grooves, and the pattern may include a straight bar, ten

V. Description of the invention (5) One of heart-shaped, spiral, and compound forms including a straight stop 旋 spiral. "Ten zigzag shape, concentric circle shape and screw shape. Among the above-mentioned polishing pads and w pieces, the general polishing view, the polishing disc and the polishing member, among which the polishing pads include abrasive cloth polishing pads. ： = :: 有 =: =;:, in: Grinding lining or grinding member formed by the disc K2: pad direction ::; enough surface to grind two Γ so that the polishing pad also B, j_ The polishing rate of the polishing member, the surface of the object to be polished is flat, and the polishing rate is good. &Amp; The polishing member of the moon can still provide the polishing member which is quite a clear polishing member, and its unevenness is 2-2. Curve-like smooth changes' Even if shallow grooves are used to increase the polishing rate, the pieces can not only achieve cross-voltage crossover, but also effectively reduce the load effect problem due to the different density of the pattern of the object being polished. fi ώ 研磨 The abrasive member used in the present invention can improve the polishing, the rate, and is suitable for the object to be polished with a flat surface. Therefore, in the application of shallow grooves = process, the thickness of the oxygen cut (the object to be polished) will be ΐ to The degree will no longer be restricted to = heart: == satisfy smaller Inch shallow trench isolation structure and the width of the private emulsified silicon trench filling process. Therefore, the abrasive cloth type of the present invention 1227521 Description of the invention (6) The two grinding parts can be applied to the shallower size of the smaller γ 'The grinding of the present invention The component is used for grinding ::: structural process. In the case of silicon oxide, it can improve the grinding rate of the sand / ditch isolation structure and also the grinding rate of the emulsification. Effectively reduce the silicon oxide 2 in shallow trenches, and obtain the effects of flat grinding to maintain the phenomenon of oxidized stone pitting against nitrided slabs, ceremonial moxibustion, and selection ratio of silicon slabbing. In order to make the above and other aspects of the present invention The purpose and obviousness are as follows. A preferred embodiment is given below: J can be explained in more detail as follows: The figure shown in FIG. 5 is shown in detail. The first embodiment is shown in FIG. 2 as a preferred embodiment according to the present invention. A schematic cross-sectional view of a polishing member of the embodiment. Please refer to FIG. 2. The polishing member 200 of the present invention is a polishing pad 21, a polishing pad 22, and a platen. ) 230. Please continue Referring to FIG. 2, the polishing pad 210 is disposed on the polishing pad 22o. In this embodiment, the main body of the polishing pad 2 1 0 is, for example, a fixed abrasive polishing pad, and the polishing pad 210 includes a plurality of polishing pads. Abrasive particles (herein for the sake of simplification, the abrasive pads are shown as a whole layer of 21 and not the individual abrasive particles are shown here in Figure 2), where these abrasive particles are triangular cones, hexagonal cones Or cylindrical and matrix arrangement, and each abrasive particle is composed of a binder and abrasive particles uniformly distributed in the binder, and the binder is, for example, a resin. It is worth mentioning that if the polishing pad is applied to a shallow trench isolation junction

11486twf.ptd Page 12 1227521 V. Description of the invention (7) Selection ratio. Evening /, there are two kinds of grinding selection, ΓΓ! Ref; Figure 2 'Grinding lining 220 is configured in the main body of the grinding class gram force 220, such as plastic, rubber or 2 = ::, structure /. It is worth noting here that in this embodiment, the surface 222 that is in contact with the polishing pad 210 is composed of a complex J ::: structure 224 and a groove 225, and has a surface roughness with unevenness (level difference). The surface 222 of the pad 220 is formed with a concave-convex (level difference) method, such as removing a part of the abrasive pad 2 2 0 to form a groove, a convex structure 224, and a diagram of the formed groove 225; Such as' straight bar (as shown in Fig. 3A), cross (as shown in Fig. 3β), concentric circles (as shown in ^ 3 (: picture), spiral shape (as shown in 3D picture) Or one of the composite types including straight, =, concentric circles, and spirals. Next, please continue to refer to Figure 2. The grinding disc 23 is arranged in the grinding machine (not shown), where The main body of this grinding disc 23 is made of, for example, stainless steel or alloy. Next, referring to FIG. 4, the grinding member 2000 of this embodiment is actually used to polish the silicon oxide of the shallow trench isolation structure. Schematic cross-section. In Figure 4, wafer 300 has a plurality of shallow trenches, and A silicon oxide insulating layer (that is, a private object to be polished) having a height difference to fill these shallow trenches is formed on 300. When the insulating layer 310 is polished by using the polishing member 2000 of this embodiment, The surface of the wafer 300 where the insulating layer 31 is formed is pressure-bonded on the polishing pad 2 10 for polishing. 11486twf.ptd Page 13 1227521 V. Description of the invention (8) It is worth noting here that, The surface 222 of the polishing pad 220 is composed of a convex structure 224 and a groove 225 and has a concave-convex surface (difference in height). During polishing, the polishing pad 21 will be pressed and depressed toward the groove 225, thereby As a result, the polishing pad 21 ° will also generate unevenness (level difference), and the polishing pad 21 will cause unevenness, so that the adhesive in the convex part of the polishing pad 2 10 can be easily removed to expose the abrasive particles. Since the abrasive particles therein will be easier to contact the insulating layer 3, the polishing rate of the polishing member 200 can be increased. Moreover, even in the above-mentioned polishing process, even if the surface of the insulating layer 310 gradually becomes flat, research Because the polishing pad 21 has unevenness, based on the above-mentioned polishing mechanism, compared with the conventional polishing pad with a flat surface, the polishing member 2000 of this embodiment can still have a relatively good polishing rate. As shown in FIG. 3, the unevenness (low difference) of the polishing pad 2 in this embodiment is a curve-like smooth (sm00th) change, and is similar to the surface 222 of the polishing pad 220. The right-angle type sharp changes, so the trenches have different dense and dense patterns on the distribution of the substrate (the different dense and shallow patterns of shallow trenches are not shown in Figure 3). If you use the polishing pad in this embodiment, 2 1 〇 When polishing, not only can achieve the purpose of improving polishing, but also can reduce the smooth uneven fluctuation effect of the polishing pad 21 〇 Because of the roundness of the object to be polished & a _ ^ The same self-advancement: Different loading effects caused by different grinding rates. The 5th pair of grinding linings "The figure: The picture shows different researches in use. Among them, the general use is shown: == the shadow of the fossil evening grinding rate. The 9-pass grinding pad grinding members are used to grind oxygen.

1227521, Description of the invention (9) Fossil evening layer. Oxidation > 5th layer nitridation > 5th layer grinding, nitriding, or removing structure with grooved layer Means. Call on the table. 〇 is the surface layer. According to the figure, the polishing rate of the silicon oxide layer pad is the same as that of the polishing pad, and the general polishing structure is used. The rate is 0. The chemical components and grooves with low polishing content are used. Abrasive parts can also have grooved grinding pads. Ordinary grinding pads have grooved grinding pads. It can be known that whether the components are ground and nitrided, it is quite suitable for mechanical grinding processes. There are many people who use grooved grinding pads for oxygen pads. That is, the improvement of the polishing effect is used for the polishing of the polishing member, the polishing member for the polishing, and the polishing member for the polishing, and the ordinary polishing method is used. The silicon nitride is used for the shallow trench isolation junction. Removal rate of the siliconized layer of the polishing member using a normal polishing pad. Therefore, a grooved pad surface with uneven raised oxidized stones (the object to be polished) is shown in FIG. 6 of the first embodiment. A schematic sectional view of a research member according to a preferred embodiment. In Fig. 6, the same components as those in Fig. 2 are assigned the same reference numerals and their descriptions are omitted. Referring to Fig. 6, the polishing member 200 of the present invention is composed of a polishing pad 210, a polishing pad 22, and a polishing plate 230. The difference between this embodiment and the first embodiment lies in that the groove 229 and the convex structure 228 are disposed on the surface 226 of the polishing pad 220 that is in contact with the polishing disk 23. At this time, the polishing pad 220 is preferably j uses a deformable material, such as rubber, and the pattern y of the formed groove 229 is, for example, the patterns shown in FIGS. 3A to 3D or one of these patterns.

1227521 V. Description of the invention (ίο) When the polishing member 20 0 of this embodiment is used for polishing, the polishing pad 21 0 and the polishing pad 220 are recessed toward the groove 229, so that the polishing pad 21 0 is produced as in the first implementation. The smooth unevenness of the example can also achieve the effects of increasing the polishing rate and slowing down the load effect of the polishing as in the first embodiment. Third Embodiment FIG. 7 is not a schematic cross-sectional view of a grinding member according to another preferred embodiment of the present invention. In Fig. 7, the same components as those in Fig. 2 are assigned the same reference numerals and descriptions thereof are omitted. Referring to Fig. 7, the polishing member 200 of this month is composed of a polishing pad 21o, a polishing pad 220, and a polishing wind 230. This embodiment differs from the first embodiment in that the surface 222 of the polishing pad 220 that is in contact with the polishing pad 21o is provided with grooves 225 and two convex structures 224 that are in contact with the polishing disk 23o. On the surface 226, the groove 229 and the convex structure 228 are formed, and the formed groove 229 is dimpled, such as the patterns shown in FIGS. 3A to 3D or a composite type of these patterns. one of them. 91 η When using the polishing member 2000 of the present embodiment for polishing, the stomach of the polishing pad is recessed toward the groove 225, and the polishing pad 22 itself may be recessed toward the groove ^, so that the polishing pad 210 can produce The flat grinding speed of the first embodiment has been reduced, so that the same effect as that of the first embodiment can be achieved, and the grinding load effect can be reduced. The fourth embodiment of the embodiment Grinding structure: Figure 8: Shown according to the present invention-another preferred embodiment-the type of d surface is not intended. And in Figure 8, the components are the same as in Figure 2.

1227521 V. Description of the invention (11) The same reference numerals are used and the description is omitted. Referring to FIG. 8, the polishing member 200 of this month is composed of a polishing pad 210, a polishing pad 220, and a polishing disk 230. This embodiment is different from the first embodiment in that the groove ^ 2 15 and the convex structure 2 1 4 are disposed on the surface 212 of the polishing pad 2 1 0 and the polishing disc 2 3 0, and, The pattern of the formed trench 229 is, for example, the pattern shown in FIGS. 3A to 3D or one of these patterns. ^ Similarly, when the polishing member 200 of this embodiment is used for polishing, the polishing pad 210 is recessed toward the groove 215, so that the polishing pad 21 is generated, which is the same as the smooth unevenness of the first embodiment, so that The effect of increasing the polishing rate and slowing down the load effect of the polishing can be achieved as in the first embodiment. Fifth Embodiment FIG. 9 is a schematic cross-sectional view of a grinding member according to another preferred embodiment of the present invention. In Fig. 9, the same components as those in Fig. 2 are assigned the same reference numerals, and descriptions thereof are omitted. Referring to Fig. 9, the polishing member 200 of the present invention is composed of a polishing pad 210, a polishing pad 22o, and a polishing plate 230. The difference between this embodiment and the first embodiment lies in that the groove 235 and the convex structure 234 are disposed on the surface 232 of the grinding disc 23 which is in contact with the grinding pad = 0, and the grinding pad 220 is preferred at this time. For the use of a shapeable and supportable material, such as rubber, the pattern of the grooves 229 formed is, for example, the patterns shown in FIGS. 3A to 3D or a combination of these figures. 1 "1 Similarly, when using the grinding member 2000 of this embodiment for grinding

1227521 V. Description of the invention (12) At the time of polishing pad 210 and polishing pad 220, grooves 235 and polishing pad 21 () will produce smooth uneven bumps and depressions as in the first embodiment, so that the sample can achieve the same as the first implementation. For example, the effect of improving research and the same load effect. Dragon slows down the grinding. Next, please refer to Figure 10, which shows the effect of different roughing rates on stone oxides / the use of different roughing ratios in the case of a grinding disc with a rough surface as shown in Figure 10. Among them, it means that the abrasive members using a low-roughness surface polishing disc (: f-speed pads without bumps and undulations) are used to grind oxidized stone, and the high-rough surface polishing discs (that is, polishing pads with bumps and bumps) are used for polishing. To polish the silicon oxide layer. Lu Jiangyi, the person) to grind the nitrided layer of the disk to grind the surface of the nitrided layer, to grind the surface of the nitrided layer to the surface of the plate: Grind the surface of the disk or the surface of the high-granulated sugar with a low coarse sugar surface :: ：： 二 ： Therefore, it is quite suitable for shallow trench isolation structure. It is very suitable for those who use high-coarse sugar surface grinding discs. Rough surface grinding discs have many rough and rough surface grinding discs for oxidized stone layer, because: = obvious The use of low-abrasive components in the south of the country ... The use of abrasive pads with rough surface abrasive discs can effectively improve the polishing structure rate of if == convex. The emulsification of silicon (the object to be polished) is faster than the polishing pad. In each of the above embodiments, the method of forming a surface with unevenness, an abrasive pad, or an abrasive disk is performed by removing a portion of the abrasive.

1227521 V. Description of the invention (13) The method of forming grooves on the surface of a pad, a polishing pad or a grinding disc is achieved, but the present invention is not limited to this. The method of forming a convex structure on the surface of the polishing disc can be, for example, by sticking tape on the surface of the polishing pad, the polishing pad, or the polishing disc, or by using a screen on the surface of the polishing pad, the polishing pad, or the polishing disc. The printing method forms a patterned convex structure to form an uneven surface on a polishing pad, a polishing pad or a polishing disc. Furthermore, no matter which method is adopted, as long as an uneven surface is formed on a polishing pad, a polishing pad, or a polishing disk, it is included in the technical features of the present invention. Furthermore, in the above-mentioned preferred embodiment, the process is described for the application of the shallow trench isolation structure process. However, those skilled in the art should know that as long as the application is a chemical mechanical polishing process, for example, the surface profile of the wafer is flat The abrasive members of the present invention can be used for the fabrication of mosaic structures for vertical, horizontal, and horizontal metal interconnects, the production of advanced components, the planarization of MEMS, and the production of flat displays. To sum up, the present invention has at least the following advantages: 1. The polishing pad, polishing pad, or polishing disc system of the present invention forms a concave-convex surface with a low difference. When the pad and the polishing member composed of the grinding disc are being polished, the polishing pad will be pressed and the recess of the concave-convex surface will be depressed, so that the polishing pad also has unevenness. The adhesive can be easily removed and exposed, so the abrasive particles in it will be easier to contact with the object to be polished, and it will not be enough to raise the polishing rate of the abrasive member, even if it is the surface of the object to be polished.

1227521 V. Description of the invention (14) The plane is flat and the rate of the present invention is 02. The curve of the present invention is smooth and different patterns, so that the purpose of the grinding rate is reduced, and the load of different rates is effectively reduced. 3 Suitable for surface-travel applications, the thickness of the oxygen-lifted shallow trench isolation will no longer be thicker to meet the energy path of the oxygen-type abrasive component required for the fabrication process. 4 · The oxidized stone of the process of the present invention can also be used to effectively maintain the silicon oxide and nitrogen by sanding. Although the present invention is limited to the present invention, it can be caused by the unevenness of the convex volt system distribution. It is enough to mention the isolation barrier of the Nanyan trench, and because the shallow trench can be formed, the abrasive component of the trench isolation junction of the present invention can still provide a relatively good abrasive polishing pad for the abrasive component, which is concave, even if the shallow trench is on the base. With the polishing member of the present invention, not only the smoothness of the polishing pad to the pattern of the object to be polished is not affected, but also the problem of inefficiency. It is clear that the abrasive components used can be polished, so the thickness of the shred will not be affected by the process width of the structural process. However, it is limited, that is, the smaller size of silicon oxide (90 nm and below). The width of the fossil evening trench filling process is sufficient for shallow trenches of smaller size. K = used to grind shallow trench isolation and scoop k pairs. Characteristics of silicon oxide polishing rate chemical mechanical polishing. The effect of oxygen cutting in the IS channel is to select the ratio of polishing to polishing. It is a kind of abrasive cloth structure with a dense grinding structure structure capable of diffusing Tienan research and being able to oxidize silicon. The same structure is flat and polished. The preferred embodiment is disclosed above. Anyone familiar with this Artists, do not leave: hair is not the essence of the Ming

Page 1227521

11486twf.ptd Page 21 1227521 Brief description of the drawing --- ~ = ^ The drawing shows a schematic cross-sectional view of a conventional abrasive member. FIG. 2 is a schematic cross-sectional view of a comparative member according to the present invention. ^ Example of the grinding chart. The edges of FIGS. 3A to 3D are schematic diagrams of the shape of the grooves in FIG. 2: FIG. 4 is a schematic cross-sectional diagram of the polishing process of the silicon oxide structure of the polishing structure of FIG. Screen-Separation Figure 5 shows the schematic diagram for the research of silicon oxide / IUh2 roughness polishing pads when using non-grinding members. & Effect of fossil evening fossil evening grinding rate Figure 6 is a schematic cross-sectional view of another comparatively careful member according to the present invention. A study of a case of bismuth bismuth. Figure 7 shows a schematic cross-sectional view of another M-milled member according to the present invention. A Kind of Research on the Example of Jia Jiaguan Figure 8 is a schematic cross-sectional view of a grinding member according to the present invention. Fig. 9 is a schematic cross-sectional view of a grinding member according to the present invention. Another month—a study of a preferred embodiment. FIG. 10 illustrates the grinding intention of a silicon oxide / gas different-roughness grinding disc in the case of using a component. Indication of the influence of the polishing rate of gasified rocks [Illustration of drawing marks] 1 0 〇, 2 0 0: polishing member 1 1 〇, 2 1 0: polishing pad

^^ twf.ptd Page 22 1227521 Brief description of drawings 1 2 0, 2 2 0: Polishing pad 1 3 0, 2 3 0: Polishing disc 300: Wafer 3 1 0: Insulating layers 212, 222, 226, 232: Table® 214, 224, 228, 234: Convex structure 215 ^ 22 5 > 229 ^ 235: Groove

11486twf.ptd Page 23

Claims (1)

1227521 VI. Application Patent Scope 1. A kind of grinding-grinding-grinding in which the first surface of the grinding pad and 2. Rushen convex surface is formed by 3. Rushen groove pattern and straight strip Zhong Xi '—— —— 〇A polishing member includes: a disc; a pad disposed on the polishing disc; a pad disposed on the polishing pad, the polishing pad is a first 矣 & A # α said * ^ /, the polishing塾 contact, and the two surfaces of m are in contact with the grinding disc, and at least one of the first surfaces is the first in the patent scope! A plurality of grooves and a plurality of convex structures are formed in the concave and convex surfaces of the abrasive structure concave item described in the item. Please refer to the abrasive members described in item 2 of the patent scope, where these systems include straight bars, crosses, concentric circles, spiral shapes, cross shapes, concentric circles and spiral composite types. The polishing member according to item 1 of the patent application range, wherein the first surface and the second surface are simultaneously the uneven surface. 5. The abrasive member according to item 1 of the patent application scope, wherein the abrasive pad includes an abrasive cloth-type polishing pad. 6. A polishing member, comprising: a polishing disc; a polishing pad disposed on the polishing disc; and a polishing pad disposed on the polishing pad, wherein the polishing pad is formed by a first surface and The polishing pad is in contact, the polishing pad is in contact with the polishing disk with a second surface, the polishing pad is in contact with the polishing pad with a third surface, and the polishing disk is in a fourth table 11486twf.ptd Page 24 1227521 1227521 VI. Patent application scope, and at least one of the first surface and the second surface is a / tetra-convex surface. 1 5 · The polishing pad according to item 14 of the scope of patent application, wherein the uneven surface is composed of a plurality of grooves and a plurality of convex structures. 16 · The polishing pad according to item 15 of the scope of patent application, wherein the patterns of the grooves include straight bars, crosses, concentric circles, spirals, and straight bars, crosses, and concentric shapes. One of the complex states of circle and spiral. 17 • The polishing method described in item 14 of the scope of patent application, wherein the first surface and the second surface are simultaneously the uneven surface. 18. A polishing pad having a main body, adapted to form a polishing member with a polishing disc and a polishing pad, wherein the polishing pad is in contact with the polishing pad with a surface, and the surface is an uneven surface . 19 · The polishing pad according to item 18 of the scope of patent application, wherein the concave-convex surface is composed of a plurality of grooves and a plurality of convex structures. 2, 20 · The polishing pad as described in item 19 of the scope of patent application, wherein the patterns of these 2 7 include straight strips, crosses, concentric circles, spirals are straight bars, crosses, concentric The composite form of a circle and a spiral shape is one of the following: 108% 21-The polishing pad according to item 18 of the scope of patent application, wherein the research includes abrasive cloth-type polishing pads.