TWI227554B - Flip-chip package with integration of passive component - Google Patents
Flip-chip package with integration of passive component Download PDFInfo
- Publication number
- TWI227554B TWI227554B TW093106551A TW93106551A TWI227554B TW I227554 B TWI227554 B TW I227554B TW 093106551 A TW093106551 A TW 093106551A TW 93106551 A TW93106551 A TW 93106551A TW I227554 B TWI227554 B TW I227554B
- Authority
- TW
- Taiwan
- Prior art keywords
- chip
- substrate
- flip
- passive component
- item
- Prior art date
Links
Classifications
-
- H10W70/681—
-
- H10W72/072—
-
- H10W72/073—
-
- H10W74/15—
-
- H10W90/724—
-
- H10W90/728—
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
Description
1227554 五、發明說明(1) —^ 【發明所屬之技術領域】 本發明係有關於一種覆晶封裝構造,特別係有關於一 種整合被動元件之覆晶封裝構造。 【先前技術】 在半導體晶片與基板之電性連接技術中,「覆晶衾士 合」〔flip-chip mounting〕技術無論在電路密度與&程 效率均優於傳統的打線技術〔w i r e b ο n d i n g〕,尤盆適用 在咼^數位的應用,而半導體晶片與基板在高速數位的廡 用上常會產生不必要的共振或訊號反射,而影響訊號品 質’為了改善電性訊號品質或增加電氣功能,會在該半導 體裝置上表面接著一被動元件〔passive c〇mp0nent〕, 如電感、電阻或電容元件,由於該些被動元件相當便宜且 易取得,將該些被動元件直接整合至該晶片或基板内,不 符成本效益。有鑑於此,另有將被動元件配置於封裝膠體 外之基板上者,請參閱第1圖,如中華民國專利公告第 51 5063號「可改善訊號品質之IC封裝元件」所揭示"者,該 封裝元件係包含有一第一基板10及一第二基板2〇,該第一 基板10係具有一第一表面及一第二表面,該第一表面係用 以供一晶片之封裝〔圖未繪出〕,而該第二表面係用以裝 配外部端子1 1,複數個被動元件21係配置於該第二基板 2/^且該第二基板2〇係設於該第一基板1〇之第一表面,故 該第一基板1 〇之第一表面除了要配置該晶片之外,更要額 外設計出周邊區域,以配置該設有被動元件21之第二基板 2〇 ’導致封裝尺寸較大且構件較多。此外,就改善電性訊1227554 V. Description of the invention (1) — ^ [Technical field to which the invention belongs] The present invention relates to a flip-chip package structure, and more particularly to a flip-chip package structure integrating passive components. [Previous technology] In the electrical connection technology of semiconductor wafers and substrates, the "flip-chip mounting" technology is superior to traditional wire bonding technology in both circuit density and & process efficiency [wireb ο nding ], Especially suitable for digital applications, and semiconductor wafers and substrates often generate unnecessary resonance or signal reflection in high-speed digital applications, which affects signal quality. 'In order to improve the quality of electrical signals or increase electrical functions, A passive component [passive c0mp0nent] will be attached to the upper surface of the semiconductor device, such as an inductor, a resistor or a capacitive component. Since the passive components are relatively cheap and easy to obtain, the passive components are directly integrated into the chip or substrate. , Not cost-effective. In view of this, if there are other passive components arranged on the substrate outside the encapsulant, please refer to Figure 1, as disclosed in the Republic of China Patent Bulletin No. 51 5063 "IC Package Components That Improve Signal Quality", The package element includes a first substrate 10 and a second substrate 20. The first substrate 10 has a first surface and a second surface. The first surface is used for packaging a chip (not shown). [Drawing], and the second surface is used for assembling the external terminal 11, the plurality of passive components 21 are disposed on the second substrate 2 / ^, and the second substrate 20 is disposed on the first substrate 10 The first surface. Therefore, in addition to the wafer, the first surface of the first substrate 10 needs to be additionally designed with a peripheral area to configure the second substrate 20 ′ provided with the passive element 21, resulting in a smaller package size. Large and many components. In addition,
1227554 五、發明說明(2) 號品質或增加電氣功能而 〔圖未繪出〕保持在一定 說’上述之被動元件可能 與该晶片相距太遠,進而 無法有效改善電性訊號品 此外,中華民國專利 元件之堆疊式多晶片封裝 裝結構’其係包含一基板 導體晶片及至少一被動元 該基板上,該第二半導體 上’該第一半導體晶片與 可採用覆晶技術,該第二 導體晶片之尺寸,該被動 上未被該第二半導體晶片 而言,雖然此一配置方式 加電氣功能,然該第一半 體晶片之外,還要配置該 尺寸無法縮小之問題。 【發明内容】 本發明之主要目的係 晶封裝構造,其係以一結 於一具貫通開孔之基板, $ % ’以減少基板結合 本發明之次一目的係 言’該被動元件21必須 的距離内,才有其效果 會因為係配置於該封裝 無法達到其所預期之效 質或有效增加電氣功能。 公告第461 058號「具有整合被動 、、口構」係揭不有另^一種習知之封 與該晶片 。也就是 膠體外而 果,亦即 、一第一半導體晶片、 件’該第一半導體晶片 晶片係安置 該第二半導 半導體晶片 元件係安置 所佔據之空 能進一步改 導體晶片除 被動元件, 第二半 係安置於 於該第一半導體晶片 體晶片之安置方式係 之尺寸小於該第一半 於該第一半導體晶片 間上。就其 善電性訊號 了要配置該 卻同樣導致 電氣特性 品質或增 第二半導 封裝結構 在於提供一種整合被動 合有被動元件之晶片, 該被動元件係對應於該 面積。 在於提供一種整合被動元件之覆 元件之覆 覆晶結合 基板之貫1227554 V. Description of the invention (2) The quality of No. 2 or increase of electrical functions (not shown in the figure) must be kept to say 'the passive components mentioned above may be too far away from the chip, so that electrical signal products cannot be effectively improved. A patented stacked multi-chip package structure includes a substrate conductor wafer and at least one passive element on the substrate, the second semiconductor on the first semiconductor wafer, and a flip-chip technology can be used, the second conductor wafer In terms of the size, the second semiconductor chip is not passively. Although this configuration method adds electrical functions, the size of the first half chip cannot be reduced. [Summary of the invention] The main purpose of the present invention is a crystal package structure, which is connected to a substrate with a through-hole, $% 'in order to reduce the combination of the substrate and the second objective of the present invention,' the passive component 21 is necessary Within a distance, the effect will be because the package can not achieve its expected quality or effectively increase the electrical function. Announcement No. 461 058 "with integrated passive, integrated structure" is unveiled without another known seal and the chip. That is to say, the result is out of the colloid, that is, a first semiconductor wafer, a piece of the first semiconductor wafer, the space occupied by the second semiconducting semiconductor wafer element system, and the space occupied by the semiconductor chip can be further modified in addition to the passive components. The two halves are arranged on the first semiconductor wafer body and the size of the arrangement is smaller than the first half on the first semiconductor wafer. For its good electrical signal, it is necessary to configure it, but it also results in electrical characteristics or quality. The second semiconductor package structure is to provide a chip with passive components integrated with passive components, which correspond to the area. It is to provide an integrated passive device cover, a flip chip bonding, and a substrate.
第8頁 1227554 五、發明說明(3) 晶封裝構造,其係以一結合有被動元件之晶片,覆晶結合 =一具貫通開孔之基板,且該被動元件係對應於該基板之 貫通開孔,一底部填充材係可由該貫通開孔注入,而形成 於該晶片與該基板之間,並填充於該貫通開孔,該底部填 充材係同時密封該被動元件,並穩固該些凸塊與該被動元 件。 依本發明之整合被動元件之覆晶 一基板、一晶 具有一上表面 穿該上表面與 該基板之下表 結合有該晶片 有複數個第一 成有複數個凸 之上表面,且 件係對應於該 部填充材係係 板之間,並填 固該些凸塊與 片、一被動 、一下表面 該下表面, 面係接合有 ,該晶片係 銲墊及至少 塊,該晶片 該第二銲墊 貫通開孔而 可經由該貫 充於該貫通 該被動元件 元件及一底 及一貫通開 其寬度係介 複數個銲球 具有一主動 一第二銲墊 係以該些凸 係對準於該 結合於該晶 通開孔注膠 開孔,以密 封裝構造,其 部填充材,該 孔,該貫通開 於0. 3 至3. Omm ,該基板之上 面’該主動面 ,該些第一銲 塊覆晶結合於 貫通開孔,該 片之第二銲墊 形成於該晶片 封該被動元件 基板係 孔係貫 為佳, 表面係 係形成 墊係形 該基板 被動元 ,該底 與該基 ,並穩 【實施方式】 參閱所附圖式,本發明將列舉以下之實施例說明。 人、rfr 2本發明之第一具體實施例,請參閱第2圖,一種整 =被動70件之覆晶封裝構造100,其係包含一基板U0、一 晶片120、一被動元件130及一底部填充材14〇,該基板11〇Page 8 1227554 V. Description of the invention (3) Crystal package structure, which is a wafer with passive components, flip-chip bonding = a substrate with through-holes, and the passive component corresponds to the through-opening of the substrate Hole, an underfill material can be injected from the through opening, formed between the wafer and the substrate, and filled in the through opening. The underfill material simultaneously seals the passive element and stabilizes the bumps With the passive element. A flip-chip substrate for integrating passive components according to the present invention, a wafer having an upper surface penetrating the upper surface and a lower surface of the substrate are combined with the wafer having a plurality of first and a plurality of convex upper surfaces, and the components are Corresponding to the filling material system board, the bumps and sheets are filled, a passive, lower surface and lower surface are bonded, the wafer is a bonding pad and at least one, the wafer is the second The pads pass through the openings and can pass through the passive components and one bottom and one through the width of a plurality of solder balls with an active and a second pad aligned with the convex systems. The bonding is combined with the crystal through hole, the injection hole, to seal the structure, the part of the filling material, the hole, which is open at 0.3 to 3. Omm, on the substrate 'the active surface, the first A solder bump is bonded to the through hole, and the second pad of the sheet is preferably formed on the wafer to seal the passive element substrate. The hole system is preferably formed on the surface, and the surface system is formed into a pad system. The substrate and the passive element are formed. And stable [implementation] The accompanying drawings, the present invention will include the following examples. Human, rfr 2 The first specific embodiment of the present invention, please refer to FIG. 2, a flip-chip package structure 100 with a total of 70 passive components, which includes a substrate U0, a wafer 120, a passive component 130, and a bottom Filling material 14〇, the substrate 11〇
第9頁Page 9
1227554 五、發明說明(4) 之材質係可為BT、FR-4或FR-5,其係具有一上表面in、 一下表面112及一貫通開孔丨13,該貫通開孔113係貫穿該< 上表面111與該下表面11 2,該貫通開孔11 3之寬度係不小· 於0.3mm,較佳地,係介於0·3至30min,該基板110之下表 面11 2係接合有複數個銲球1 5 〇,用以傳輸該覆晶封裝構造 100之訊號,該基板110之上表面丨丨1係結合有該晶片12〇, 該晶片120係具有一主動面1 21,該主動面121係形成有複 數個第一銲墊122及複數個第二銲墊123,該些第一銲塾 122係形成有複數個凸塊124,該晶片120係以該些凸塊124 覆晶結合於該基板110之上表面111,該些第二銲塾123係 對準於该貝通開孔11 3 ’該被動元件1 3 〇係可為電感、電阻 或電容元件,該被動元件1 3 0係對應於該貫通開孔1 1 3而結 合於該晶片1 20之第二銲墊1 23,在本實施例中該被動元件 130係比該些凸塊124較為突起於該晶片12〇之主勒面121, 而設於該貫通開孔11 3中,該底部填充材1 4〇係形成於該晶 片120與該基板110之間,並填充於該貫通開孔113,以穩 固該些凸塊124與該被動元件130,較佳地,該底部填充材 140係覆蓋且密封該被動元件1 30,使得該被動元件丨3〇被 埋設於該貫通開孔113之中。 由於該被動元件1 3 0係結合於該晶片1 2 〇之第二銲塾 123,並對應於該基板110之貫通開孔113,該基板11〇不需 再額外設計出周邊區域以供該被動元件丨30結合,以減少 該基板11 0面積,而當該被動元件1 3 〇比該些凸塊1 2 4較為 突起於該晶片1 2 0之主動面1 21時,可以利用該貫通開孔1227554 V. Description of the invention (4) The material system can be BT, FR-4 or FR-5, which has an upper surface in, a lower surface 112 and a through-opening 丨 13. The through-opening 113 runs through the < The upper surface 111 and the lower surface 11 2, the width of the through-opening hole 11 3 is not less than 0.3 mm, preferably, 0.3 to 30 minutes, and the lower surface 11 2 of the substrate 110 is A plurality of solder balls 150 are bonded to transmit the signal of the flip-chip package structure 100. The upper surface of the substrate 110 is combined with the wafer 120, and the wafer 120 has an active surface 121. The active surface 121 is formed with a plurality of first pads 122 and a plurality of second pads 123. The first pads 122 are formed with a plurality of bumps 124, and the wafer 120 is covered with the bumps 124. The crystals are bonded to the upper surface 111 of the substrate 110, and the second solder pads 123 are aligned with the Betong openings 11 3 'The passive element 1 3 0 may be an inductor, a resistor or a capacitive element, and the passive element 1 3 0 corresponds to the through-opening 1 1 3 and is connected to the second pad 1 23 of the wafer 120. In this embodiment, the passive component 130 is more The block 124 is relatively protruded from the main face 121 of the wafer 120, and is provided in the through-opening hole 113. The underfill material 140 is formed between the wafer 120 and the substrate 110, and is filled in the The through hole 113 is used to stabilize the bumps 124 and the passive element 130. Preferably, the underfill material 140 covers and seals the passive element 130, so that the passive element 30 is buried in the through opening. Hole 113. Since the passive component 130 is coupled to the second solder pad 123 of the wafer 120 and corresponds to the through-hole 113 of the substrate 110, the substrate 110 does not need to additionally design a peripheral area for the passive The components 30 are combined to reduce the area of the substrate 110, and when the passive component 130 is more protruded than the bumps 124 on the active surface 121 of the wafer 120, the through opening can be used
第10頁 1227554 五、發明說明(5) - 11 3作為該被動元件1 3 〇之讓位空間,亦即該被動元件丨3 〇 係可被容納於該貫通開孔11 3中,以不影響該些凸塊1 2 4為 該基板11 0之結合。此外,如第3圖所示,該底部填充材 140係可由一塗膠針頭2〇〇注入該貫通開孔113,當該底部 填充材140經由該貫通開孔1 13注膠形成於該晶片12〇與該 基板11 0之間,並填充於該貫通開孔丨丨3時,可同時密封該 被動元件130,以穩固該些凸塊124與該被動元件130,不 需再以額外步驟保護該些被動元件1 3 〇。 本發明例舉第二具體實施例,請參閱第4圖,一種整 合被動元件之覆晶封裝構造3 〇 〇,其係包含一基板3 1 〇、一 晶片320、一被動元件330及一底部填充材340,該基板係 具有一上表面311、一下表面312與一貫穿該上表面3 11與 該下表面312之貫通開孔313,且該貫通開孔313係形成有 一階梯部314,該基板310之下表面312係接合有複數個銲 球350,該基板3 10之上表面311係結合有該晶片320,該晶 片320係具有一主動面321,該主動面321係形成有複數個 第一銲墊322及一第二銲墊323,該些第一銲墊322係形成 有複數個凸塊324,該晶片320係以該些凸塊324覆晶結合 於該基板310之上表面311,且該第二銲墊323係對準於該 基板310之貫通開孔313,該被動元件330係具有一第一接 合端331及一第二接合端332,該第一接合端331係結合於 該晶片320之第二銲墊323,該第二接合端332係以一銲線 360電性連接至該基板31〇之階梯部314,該底部填充材34〇 係經可由該貫通開孔313注膠形成於該晶片320與該基板Page 1227554 V. Description of the invention (5)-11 3 as the yielding space of the passive element 1 3 0, that is, the passive element 3 0 0 can be accommodated in the through opening 11 3 so as not to affect The bumps 1 2 4 are a combination of the substrate 110. In addition, as shown in FIG. 3, the underfill material 140 can be injected into the through-hole 113 through a glue-coated needle 2000. When the underfill material 140 is injected through the through-hole 1 13 to form the wafer 12 〇 and the substrate 110, and filled in the through-opening 丨 丨 3, the passive element 130 can be sealed at the same time to stabilize the bumps 124 and the passive element 130, without additional steps to protect the These passive components 1 3 0. The present invention exemplifies a second specific embodiment. Please refer to FIG. 4, a flip-chip package structure 300 for integrating passive components, which includes a substrate 3 1 0, a wafer 320, a passive component 330, and an underfill. Material 340, the substrate has an upper surface 311, a lower surface 312, and a through hole 313 penetrating the upper surface 31 and the lower surface 312, and the through hole 313 is formed with a stepped portion 314, the substrate 310 The lower surface 312 is connected with a plurality of solder balls 350, and the upper surface 311 of the substrate 3 10 is combined with the wafer 320. The wafer 320 has an active surface 321, and the active surface 321 is formed with a plurality of first solders. A pad 322 and a second pad 323, the first pads 322 are formed with a plurality of bumps 324, the wafer 320 is bonded to the upper surface 311 of the substrate 310 by the bumps 324, and The second bonding pad 323 is aligned with the through hole 313 of the substrate 310. The passive element 330 has a first bonding end 331 and a second bonding end 332. The first bonding end 331 is coupled to the wafer 320. A second bonding pad 323, and the second bonding end 332 is electrically connected by a bonding wire 360. 31〇 connected to the substrate portion of step 314, the underfill material may be through the through 34〇 based dispensing opening 313 formed on the wafer 320 and the substrate
第11頁 1227554 五、發明說明(6) 3 1 0之間’並填充於该貫通開孔3〗3,以穩固該些凸塊 324,並密封該被動元件330與該銲線360。 本發明之保護範圍當視後附之申請專利範圍所界a 為準,任何熟知此項技藝者,在不脫離本發明之精 有 範圍 圍内所作之任何變化與修改,均屬於本發明之保1神和範Page 11 1227554 V. Description of the invention (6) 3 1 0 'is filled in the through opening 3 3 to stabilize the bumps 324 and seal the passive element 330 and the bonding wire 360. The scope of protection of the present invention is subject to the scope of the appended patent application scope. Any changes and modifications made by those skilled in the art without departing from the scope of the present invention are covered by the present invention. 1 God and Fan
第12頁 1227554 圖式簡單說明_ ------------ /圖式簡單說明】 第^圖·中華民國專利公告第51 5063號「可改善訊號品質 之1C封裝元件之前視示意圖; : ϋ ί :依據本發明之第一具體實施例,一種整合被動元 件之覆晶封裝構造之截面示意圖; 依據本發明之第一具體實施例,該整合被動元件 ^曰ί裴構造,由貫通開孔注入底部填充材之截面示意 圖,及 ,依據本發明之第二具體實施例,一種整合被動元 件之覆晶封裝構造之截面示意圖。 元件符號簡單說明: 10 第一基板 11外部端子 20 第二基板 21被動元件 100 覆晶封裝構造 110 基板 111上表面 112下表面 113 貫通開孔 120 晶片 121 主動面 122第一鋅 123 第二銲墊 124凸塊 130 被動元件 140 底部填充材 150 銲球 200 塗膠針頭 3 0 0覆晶封裝構造1227554 on the 12th page _------------ / Simplified Schematic on the map] Figure ^ • Republic of China Patent Bulletin No. 51 5063 "Front view of 1C package components that can improve signal quality Schematic diagram: ϋ ί: According to a first specific embodiment of the present invention, a cross-sectional schematic diagram of a flip-chip package structure integrating passive components; according to a first specific embodiment of the present invention, the integrated passive component is constructed by A schematic cross-sectional view of a through-hole injection underfill material and, according to a second embodiment of the present invention, a cross-sectional schematic view of a flip-chip package structure integrating passive components. Brief description of component symbols: 10 first substrate 11 external terminals 20 Two substrates 21 Passive component 100 Chip-on-chip packaging structure 110 Substrate 111 upper surface 112 lower surface 113 through hole 120 wafer 121 active surface 122 first zinc 123 second pad 124 bump 130 passive component 140 underfill 150 solder ball 200 Rubber-coated needle 3 0 0 flip chip package structure
1227554 圖式簡單說明 310 基板 311 上表面 312 下表面 313 貫通開孔 314 階梯部 320 晶片 321 主動面 322 第一銲墊 323 第二銲墊 324 凸塊 330 被動元件 331 第一接合端 332 第二接合端 340底部填充材 3 5 0 鲜球 3 6 0 銲線1227554 Brief description of the diagram 310 Substrate 311 Upper surface 312 Lower surface 313 Through hole 314 Stepped portion 320 Wafer 321 Active surface 322 First pad 323 Second pad 324 Bump 330 Passive element 331 First joint end 332 Second joint End 340 underfill material 3 5 0 fresh ball 3 6 0 welding wire
第14頁Page 14
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW093106551A TWI227554B (en) | 2004-03-11 | 2004-03-11 | Flip-chip package with integration of passive component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW093106551A TWI227554B (en) | 2004-03-11 | 2004-03-11 | Flip-chip package with integration of passive component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI227554B true TWI227554B (en) | 2005-02-01 |
| TW200531234A TW200531234A (en) | 2005-09-16 |
Family
ID=35696414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093106551A TWI227554B (en) | 2004-03-11 | 2004-03-11 | Flip-chip package with integration of passive component |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI227554B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8036508B2 (en) * | 2009-09-21 | 2011-10-11 | Corning Incorporated | Methods for passively aligning opto-electronic component assemblies on substrates |
| CN112687629B (en) * | 2020-12-25 | 2024-02-23 | 上海易卜半导体有限公司 | Semiconductor packaging method, semiconductor component and electronic device containing same |
| US12159850B2 (en) | 2020-12-25 | 2024-12-03 | Yibu Semiconductor Co., Ltd. | Semiconductor packaging method, semiconductor assembly and electronic device comprising semiconductor assembly |
| US12154884B2 (en) | 2021-02-01 | 2024-11-26 | Yibu Semiconductor Co., Ltd. | Semiconductor packaging method, semiconductor assembly and electronic device comprising semiconductor assembly |
| US12500203B2 (en) | 2021-02-22 | 2025-12-16 | Yibu Semiconductor Co., Ltd. | Semiconductor packaging method, semiconductor assembly and electronic device comprising semiconductor assembly |
-
2004
- 2004-03-11 TW TW093106551A patent/TWI227554B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200531234A (en) | 2005-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100736000B1 (en) | Semiconductor device | |
| US7829961B2 (en) | MEMS microphone package and method thereof | |
| US7871865B2 (en) | Stress free package and laminate-based isolator package | |
| US7615415B2 (en) | Vertical stack type multi-chip package having improved grounding performance and lower semiconductor chip reliability | |
| CN101221946B (en) | Semiconductor package and method for manufacturing system-in-package module | |
| US7116000B2 (en) | Underfilled, encapsulated semiconductor die assemblies and methods of fabrication | |
| US20060043556A1 (en) | Stacked packaging methods and structures | |
| US20060145339A1 (en) | Semiconductor package | |
| TW557556B (en) | Window-type multi-chip semiconductor package | |
| US20090057867A1 (en) | Integrated Circuit Package with Passive Component | |
| JP2001094045A (en) | Semiconductor device | |
| CN101533814B (en) | Chip-level flip chip packaging structure | |
| JP2011159942A (en) | Electronic device and method of manufacturing the electronic device | |
| JP2002134685A (en) | Integrated circuit device | |
| TWI233194B (en) | Semiconductor packaging structure | |
| US20080009096A1 (en) | Package-on-package and method of fabricating the same | |
| TWI227554B (en) | Flip-chip package with integration of passive component | |
| JP2007281129A (en) | Multilayer semiconductor device | |
| TWI239576B (en) | Packaging of stack-type flash memory chip and the method thereof | |
| KR100444168B1 (en) | semiconductor package | |
| JP2000294722A (en) | Stacked chip semiconductor device | |
| KR100231842B1 (en) | Stacked Semiconductor Packages | |
| JP2012146882A (en) | Semiconductor device | |
| TWI278049B (en) | Stackable back-to-back flip chip package | |
| CN116072628A (en) | Heat dissipation cover plate, packaging structure and method for enhancing reliability of chip packaging |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |