TWI224345B - Ion coil and ion metal plasma physical vapor deposition equipment for improving deposition film uniformity of semiconductor chip - Google Patents

Abstract

The present invention provides an ion coil for improving deposition film uniformity of semiconductor chip, which is suitable for ion metal plasma physical vapor deposition equipment; wherein the ion coil is configured with slanted geometric shape on the surfaces at two ends of the coil, so that the main projection of the coil is a closed loop on the surface of semiconductor chip, so as to improve the problem of conventional coil with insufficient deposition depth in the gaps.

Description

1224345 V. Description of the invention (1) Technical field to which the invention belongs The present invention relates to an electric ion coil for improving the uniformity of a semiconductor wafer deposition film, and is used in an ionic metal plasma physical vapor deposition equipment, and particularly relates to an The two ends of the coil are provided with inclined geometric shapes, so that the coil body is projected on the surface of the semiconductor wafer as a closed ring-shaped ion coil, and the ion coil can effectively provide the electromagnetic force required for film deposition in its gap. Therefore, the uniformity of the thin film deposited on the semiconductor wafer can be improved. The prior art ion metal plasma physical vapor deposition equipment is used in the ion metal plasma physical vapor deposition process. As shown in FIG. 1, it is a conventional ion metal plasma physical vapor deposition device 1, which includes a vacuum chamber 11. , An ion coil 12, a high-frequency AC voltage device 13, a metal target 14, a semiconductor wafer holder 15, a semiconductor wafer is placed on this holder; this is known as the physical vapor deposition of ion metal plasma The difference between the equipment and the general physical vapor deposition equipment is that the electric ion coil 12 is mainly provided in the vacuum chamber 11 and located between the metal target 14 and the semiconductor wafer holder 15 And using the same material as the metal target 14 in the ion metal plasma physical vapor deposition process, a high-frequency AC voltage device 13 is applied on the ion coil 12 to increase this vacuum chamber The gas inside 11 has more chances of collision with the metal atoms laid down by this metal target 14 and induces more metal ionization and charging, so that these charged metal ions have better metal film formed on the semiconductor wafer. Ability to fill holes.

0503 -9538twf (nl); tsmc2002-0969; Albert.ptd Page 6 1224345 V. Description of the invention (2) As the semiconductor process evolves, the component size shrinks and becomes smaller, and the deposition is uniformly filled in the entire trench wall. It is not easy, so the physical vapor deposition of ionic metal plasma with = metal force is more capable of coping with the demand of high filling ratio than the general equipment; the physical vapor deposition of ionized metal plasma with milk phase deposition has the advantages of ionization. Better hole filling ability, but also generates another problem, the rhenium itself will cause the semiconductor ion to be separated from the conventional ions == dad; the sub-coil 12 is sinking as shown in the figure; vapor deposition equipment I ’m familiar with ionization ^ ^ '' 轾 由 由 由 由 by the frequency AC power supply device 1 3

Adi 1 ~ 1 current power supply connection part 1 2 1 and second AC power supply connection part 122 enter this electric ion coil j. A P closed shape can form a two-terminal lightning, Spring circle 1 2 must exist between non-ends-this ^ this: loop. When the non-closed electrical material shadow is on the surface of the semiconductor wafer, the S-gap 1 23 causes the ion-ion coil vertical projection wafer to be attached at the annular gap, which can form a closed annular shape, causing the semiconductor to be thin, resulting in wafer deposition; The thickness of the accumulated film is much larger than that of the other thicknesses mentioned above :: Look for the problem of uneven thickness. The main reason for yield during delivery—. The reason is that living beyond the process standard is an important issue between improving the ion coil M and affecting the uneven thickness of the film caused by the gap 123. The case of ~ 9 is really one of the production technologies. SUMMARY OF THE INVENTION The physical vapor phase of ionic metal plasma, _, phase> Ion PVD (IMP PVD) equipment due to electric ions

0503-9538twf (nl); tsmc2002-0969; Albert.ptd

1224345 V. Description of the invention (3) The use of coils has a better ability to fill holes down than ordinary physical vapor phase equipment, but because of the gap in the shape of the ion coil, there is no electromagnetic force provided by the ion coil at the gap. Insufficient deposition thickness here, affecting the uneven thickness of the overall thin film deposition, is often one of the main reasons affecting the yield of the process. In view of this, the present invention provides a design method of an ion coil, which is achieved by The two ends of the coil are provided with inclined geometric shapes, so that the coil body is projected on the surface of the semiconductor wafer into a closed ring shape, so that the coil can effectively provide the electromagnetic force required for film deposition in the gap. The multiple ion coils designed in this way can effectively improve the uniformity of the deposited film on the semiconductor wafer. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, several preferred embodiments are described below, and the accompanying drawings are described in detail as follows: DETAILED DESCRIPTION The present invention provides an electric ion coil. The purpose of improving the uniformity of the film is achieved by setting the geometric shapes of the two ends of the coil to be inclined. The following describes several preferred embodiments of the present invention for illustration. First Embodiment: In order to clearly distinguish the difference between the first embodiment of the present invention and the conventional technology, the conventional implementation of the conventional ion coils of FIGS. 2a and 2b and the first implementation of FIGS. 3a and 3b are described respectively. Example for comparison. The top view of a conventional ion coil is shown in Fig. 2a, and the side view is shown in Fig. 2b. The coil includes a coil body 2, which has a long shape and has a first end and a second

0503-9538twf (nl); tsmc2002-0969; Albert.ptd Page 8 1224345 V. Description of the invention (4) The end portion, the first end portion has a first end second end surface 2 5, 23, as shown in Fig. 2b The second end surface 2 5 of the semiconductor wafer is shown in the first actual figure of the invention. The first has a first end surface 34, and the second embodiment has the inclined surface of the first embodiment. The inclined surface becomes as the first The 3 a film was originally described. At the magnetic field gap near the 2c gap, the area perpendicular to this area is far more distributed along the 3b graph than other wired examples. Because of this, the central part of the 3c graph is slowly decreasing vertically, and The first end portion is ionized with the conventional one, so the figure is shown in the figure as shown in the figure. It can be found that the surface is a vertical plane, as in the second embodiment. The embodiment includes a coil portion and a surface 24. The second end portion has A projection of the first end surface 24 of a gap sub-coil between a second end portion and a conventional electric ion coil is formed on the incapable of generating a closed loop. This figure is shown in Figure 3a. The side view is shown in Figure 3b. The main body 3 has a long shape and an end. The first end has a first end. The explanation of the rationale is the gap 33 between the distribution zone of the upper and lower magnetic field strength loops in the traditional direction and the thin direction. The surface 34 and the coil's main closed loop can be deposited by the 2c ion wire film. The side surface is near the gap. In the first embodiment, the magnetic field strength of the first end decreases gradually, but not in the gap 2c. The center of the gap is due to the end face 35, and the second end face 3 5 is projected from the figure 3b. Therefore, the circle of the graph and 3c can be distributed along the 2b scale, and the circle can be used to compare the magnetic field strength surface 34 and the second distribution of 3c in this gap. In the first discovery, the side of the pattern where the semiconductors are deposited thickly is shown in Figure 2b, and the bottom figure of 2c is the first, and the film end surface is on the 5th side. The coil magnetically comes, and the end is parallel to the invention. Add in between FIG embodiment can send a product of the thickness of deposited thick inclined, the gap field strength from the coils

0503-953Stwf (nl); tsmc2002-0969; Albert.ptd Page 9 1224345 V. Description of the invention (6) There is a gap 5 between the two ends. The first end surface 54 has a vertical plane in the middle and two inclined surfaces that are parallel to each other on the upper and lower sides. The second end surface 5 5 has the same shape as the first end surface 5 4 and is parallel to the first end surface 54. In the third embodiment, the coil main body can be projected on the surface of the semiconductor wafer into a closed loop shape as shown in FIG. 5a, so that a thin film having a uniform thickness can be deposited. Fig. 5c shows the magnetic field intensity and film deposition thickness distribution of the second embodiment near the gap along the side of Fig. 5b; from Fig. 5c, it can be seen that the third embodiment is designed in such a way that the gap can maintain the magnetic field strength. The advantage is that the area where the magnetic field strength is significantly weakened is narrower, and the disadvantage is that the magnetic force in the center of the gap is weaker. Fourth embodiment: Figures 6a and 6b are a top view and a side view of the fourth embodiment, respectively. The fourth embodiment includes a coil body 6 having a long shape and having a first end portion and a second end portion. The first end portion has a first end portion 64 and the second end portion has a first end portion. The two end surfaces 65 are provided with a gap 6 3 between the first end portion and the second end portion. The first end surface 64 is a curved surface and is parallel to the second end surface 65. The fourth embodiment can also make the coil body projection on the surface of the semiconductor wafer into a closed loop as shown in Fig. 6a, so that a thin film with a uniform thickness can be deposited. Figure 6c shows the magnetic field strength and film deposition thickness distribution of the second embodiment near the gap along the side of Figure 6b. From Figure 6c, it can be seen that the design method of the fourth embodiment can maintain the magnetic field strength in the gap in the same way as in the fourth embodiment. The center can provide a certain strength magnetic field from the left and right ends of the coil without loss of magnetic force. The advantage is that the magnetic force in the center of the gap has a special strengthening effect, while the disadvantage is that the magnetic field strength of the gap is significantly weakened.

0503-9538twf (nl); tsmc2002-0969; Albert.ptd Page 11 The present invention has the following 1224345 V. Description of the invention (7) The area is relatively wide. To sum up, one, to provide a simple and effective physical vapor deposition process in which the thickness of the film produced by the ionic metal ion coil is not uniform, and any other part can achieve the above purpose. The ion coil can be selected according to different process requirements. For example, in the third embodiment, the area is narrow but the magnetic force in the center of the gap is stronger, but the magnetic field strength is wider. Although the present invention has been defined by four preferred methods, any person familiar with the spirit and scope of the present invention can change the scope of protection as the scope of the attached patent application. Advantages: The method can improve the physical properties of ionic metal slurry. Electrical problems with vapor deposition equipment do not require changes in the equipment. The use of different conceptual designs of this method can make the magnetic field strength significantly weaker. The fourth embodiment can make the area weaker, and the embodiment will be disclosed as above. However, the skilled artist will not depart from the hair and retouch. Therefore, what is defined in the guarantee of the present invention shall prevail.

0503-9538twf (nl); tsmc, 2002-0969; Albert .ptd Page 12 1224345 Brief description of the diagram Figure 1 is a schematic diagram of a conventional ion metal plasma physical vapor deposition equipment; Figure 2a is a conventional traditional ionization Top view of the sub-coil; Figure 2b is a side view of the conventional conventional ion coil; Figure 2c is the magnetic field strength and the film of the conventional traditional ion coil along the side of the coil in Figure 2b near the notch area Deposition thickness distribution; Figure 3a is a top view of the first embodiment of the present invention; Figure 3b is a side view of the first embodiment of the present invention; Figure 3c is a first embodiment of the present invention along Figure 3b The magnetic field intensity and film deposition thickness distribution of the side of the coil near its gap; Figure 4a is a top view of the second embodiment of the present invention; Figure 4b is a side view of the second embodiment of the present invention; Figure 4c This is a second embodiment of the present invention along the side of the coil in FIG. 4b, the magnetic field intensity and the thickness of the thin film deposition near the gap; FIG. 5a is a top view of the third embodiment of the present invention; FIG. 5b is this Side view of a third embodiment of the invention Figure 5c is the third embodiment of the present invention along the coil side of the coil side magnetic field strength and film deposition thickness distribution along Figure 5b; Figure 6a is a top view of the fourth embodiment of the present invention; Fig. 6b is a side view of the fourth embodiment of the present invention; Fig. 6c is a distribution of the magnetic field strength and the thickness of the thin film deposition of the fourth embodiment of the present invention along the side of the coil in Fig. 6b near the gap. Symbol Description

0503-9538twf (nl); tsmc2002-0969; Albert.ptd Page 13 1224345 The diagram briefly illustrates the conventional ion metal plasma physical vapor deposition equipment 11 ~ vacuum chamber; 1 ~ 3 ~ high frequency AC voltage device; 15 ~ semiconductor Chip holder, 1 2 1 ~ 1st AC power connection part 1 2 2 ~ 2nd AC power connection part 2 ~ coil body; 2 1 ~ 1st AC power connection part; 22 ~ 2nd AC power connection part: 2 4 ~ 1st end face; 3 ~ coil body; 3 1 ~ first AC power supply connection; 3 2 ~ second AC power connection; 3 4 ~ first end face; 4 ~ coil body; 4 1 ~ first AC power connection 4 2 to the second AC power connection portion; 4 4 to the first end surface; 5 to the coil body; 5 1 to the first AC power connection portion; 5 2 to the second AC power connection portion; 5 4 to the first end surface 6 ~ coil body; 6 1 ~ first AC power connection; 1 2 ~ ion coil 1 4 ~ metal leather; 1 2 3 ~ gap 23 ~ gap; 2 5 ~ second end face 33 ~ gap; 3 5 ~ 2nd end face 43 ~ gap; 4 5 ~ second end face 5 3 ~ gap, 5 5 ~ second end face

0503-9538twf (nl); tsmc'2002-0969; Albert.ptd Page 14 1224345 Schematic description

0503-9538twf (nl); tsmc2002-0969; Albert.ptd p. 15

Claims (1)

1224345 92115354 The correction dragon includes the main circle line of the body, the first end, the second end, the second part, and the end, and the first one is the end source, the first current should be connected, and the first end has a long strip with a shape. The upper end of the upper part is located in the first place, the second part is located at the end, the top surface of the surface part of the crystal is the second part, the first half is set at the place, and the main part of the main part of the loop is connected to the source line. Submitted in the second sign, the first one is the description of the semi-permanent modification of the crystals of the sinking sheet. The T i is the range. The special form, please ring Shen Zhi as Hfl · Γ 2 seal! I should have flat tools in the first line. The end of the face should be one by one, the middle of the face should be the second, the fe I Γ, the father L. The end should be flat and the face should be slanted, and the face should be in the middle with two transparent shapes: , The first central circle, the first circle and the middle line have a sloping line, and the end line has a sub-line with a sub-line, a sub-line with a section, a section with a section, and a section with a straight section. Please ask for the degree of the second one, and the second row of the second row should be uniform. Even the flat end, such as uniform, end 3. Uniform, phase two 4. Uniform membrane surface, two membrane surfaces, the thinner end of the membrane, and the thinner end is thinner.% F The term of the semi-permanent modification of the piece of crystal is described in the first half of the semi-perfect modification of the circle, and the end is connected to the line & There are two end faces which are flat on the horizontal plane, and the upper end and the two ends are straight, and the middle end of the middle part is two and one, the surface, the two ends of the end surface are sinking pieces. Paragraph IX of the guide of the semi-permanent modification of crystal guidance Fan Lizhuo, please ask Chengshen group to face 5. Incline 0503-9538twfl (nl); tsmc2002-0969; sherrytsai.ptc page 16 M 9211R ^ i Modified the patent application scope of the film uniformity of the electric ion end surface, the second end portion has a second end surface, and is a curve of 6 ·-a kind of ionic metal in half, which can be set after ionization A vacuum chamber with a metal target coil is deposited on one side. The plasma conductor is drawn to the true 1 I square; one of the ion-conducting semiconductor wafers is a wafer-bearing coil, and its seat is set at the material. The voltage controller is used to indicate the voltage of the coil. Wherein, the first end portion has a first second end surface, and the first end surface is parallel to the physical vapor deposition equipment, and the surface 9 of the metal wafer includes: a vacuum and a gas; The vacuum chamber above the semiconductor wafer and located in the metal target is the same as the metal stem; in the vacuum chamber, the semiconductor crystal is used to control the metal target, the wafer holder and the ionization ion coil include the coil body , Is a long 篦, 彳 || 心 丄 said. As mentioned in the -J η Si two ends, the main body is projected at a first intersection and the first end is connected to the body surface to connect the semi-conductive power supply voltage controller. A second AC power supply is connected to the voltage controller. 7 · If the scope of the patent application is the first phase> Children's product equipment, wherein the shape has a first end portion and a gap between the two end portions, and the line is a closed ring; One end portion is connected to the second end portion, and the portion is disposed on the second end portion, and the ion metal plasma physical gas 1 " uniformity d of the semiconductor wafer deposition film is described. I shift 4345 «Page 93 ^ June · Month No. 92115354 A___ Revision VI. Patent application scope The first end of the ion coil has a first end, the second end has a second end, and the first end It is parallel to the second end surface and is a gas-quipping Qui JJ slurry electric and gold as described in Section 6 Fan Li special application, such as ο. 8 plane oblique end with a uniform part of the second part is thinner the product The first half of the integrated surface of the end-facet of the sinking plate has a good modification. The end 9 1 should be the first one, and the backup circle is set up. The line sinker is away from the electrical side, and the line is perpendicular to the plane. The bottom part and the top part are connected by the facet one by one, and the oblique side passes through the second side. The first one is in the middle and the other is specific, and please, the face is the same as the application circle end. Line II. The first phase of the product is reflected from the side. I have to fill in the members' instructions. The phase i has nnqN days) and the surface is vertical. The first part of the reformed department should be the same as the first one, and the first one should be the same. The first fan should be applied, such as οr. At the end of the circle is set the line 2 Dizi Zi Shen Li Yi Mu Pu Electricity belongs to gold as described in item 6 Qi of the Qi with the curve of the degree. The first part of the rationality department is the uniform end of the product, the uniform end is the second, the slurry is the second, the film is the first, the surface is the first film, the thin surface is obliquely thin, the surface is inclined, and the end sinks the surface. The second row is from the first row, the first row is from the first row, the first row is from the first row, the second row is from the first row, the second row is from the first row, and the second row is from the first row to the second row. 0503-9538twfl (nl); tsmc2002-0969; sherrytsai .ptc Page 18 1224345 Schematic revision page 92115354 Date of revision: 93. 6.21 Members are requested to indicate the lack of amendments in the year, month, and day. Are there any changes to the substance of the amendment? Is amendment allowed? 4 43 Fig. 4b Deposition thickness Magnetic field strength Fig. 4c