TWI223901B - Light-emitting diode and its manufacturing method - Google Patents
Light-emitting diode and its manufacturing method Download PDFInfo
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- TWI223901B TWI223901B TW92129397A TW92129397A TWI223901B TW I223901 B TWI223901 B TW I223901B TW 92129397 A TW92129397 A TW 92129397A TW 92129397 A TW92129397 A TW 92129397A TW I223901 B TWI223901 B TW I223901B
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
1223901 五、發明說明（1 ) 【發明所屬之技術領域】 本發明係有關於一種發光二極體（L i g h t E m i 11 i n g D l o d e， L E D )及其製造方法，特別係有關於一種可將外部 光輸出效率增強之發光二極體及其製造方法。 【先前技術】 發光二極體（Light Emitting Diode， LED)是一種固 態的半導體元件，利用電流通過時二極體内產生的二個載 子（分別為帶負電的電子與帶正電的電洞）之相互結合，將 能量以光的形式釋放。由於其具有體積小（多顆、多種組 合）、反應速度快（可在高頻操作）及無污染等優點，.使得 發光二極體應用領域逐漸跨足至高效率照明光源市場，是 未來成為替代傳統照明器具的一大潛力商品。 發光二極體所使用之材料，其折射率（約為2〜3 )通常 較二極體所鄰接之介質（例如：樹脂）來的高許多，而在發 光二極體晶片和相鄰介質之間之界面上很大之折射率變動 會使全反射之邊界角變小，使二極體之發光區所產生之光 發射大部份在界面被反射回二極體中，因此使得二極體發 光區所產生之光束只有一部份由晶粒發射出來。 一種增加發光二極體之外部光輸出效率的方法，係將 二極體發光區所產生之光束利用旁放射（side emission) 或雜散放射的方式發射出。用以達成此目標的一般習知技 術，包括使用透明基板或是利用厚窗口層。如美國專利第 5，5 0 2，3 1 6號所揭示，請參照第1圖，係顯示一習知之發光1223901 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a light-emitting diode (Light E mi 11 ing D lode, LED) and a method for manufacturing the same, and particularly relates to an external Light-emitting diode with enhanced light output efficiency and manufacturing method thereof. [Previous Technology] Light Emitting Diode (LED) is a solid-state semiconductor element that uses two carriers (respectively negatively charged electrons and positively charged holes) generated in the diode when a current is passed through it. ) Are combined with each other to release energy in the form of light. Due to its small size (multiple pieces, multiple combinations), fast response speed (operable at high frequencies), and no pollution, the light emitting diode application has gradually entered the high-efficiency lighting source market, and will become a substitute in the future. A great potential commodity for traditional lighting fixtures. The materials used for light-emitting diodes usually have a higher refractive index (approximately 2 to 3) than the medium (such as resin) adjacent to the diode. The large refractive index change on the interface between them will make the boundary angle of total reflection smaller, so that most of the light emission generated by the light emitting area of the diode is reflected back to the diode at the interface, so the diode Only a part of the light beam generated by the light emitting area is emitted by the crystal grains. A method for increasing the external light output efficiency of a light emitting diode is to emit the light beam generated by the light emitting area of the diode by means of side emission or stray emission. Commonly known techniques to achieve this include using transparent substrates or using thick window layers. As disclosed in U.S. Patent No. 5,502,3,16, please refer to Fig. 1, which shows a conventional luminescence
0691 -9222^rWF(N1); A0C-02-1 3-TW ； PHOELIP. pt d 第5頁 1223901 五、發明說明（2) 二極體1 0，其具有一基底1 2、一二極體發光結構區1 4及一 厚的透明窗戶層〗5 ，其利用此厚的透明窗戶層（約5 0 β m ) 側緣1 6增加光的出射面積，引出額外的光，使二極體之光 射出增加。但由於目前可用之最佳透明窗戶層其折射率 (約為1 · 6 )仍較鄰接晶粒之介質南許多’且透明窗戶層其 與半導體膜層介面之不佳特性（例如電阻產生），造成此技 術在使用上之限制。 使用粗糙之頂面亦是業界中用以降底元件頂面反射率 的一種習知技術。此種粗糙頂面與一底部反射型元件結合 使用時尤其可增加輸出，因為原本會被反射之光束改為向 外散射，但根據斯奈爾定律（S n e 1 Γ s 1 a w，亦既折射定 律），由於垂直側壁二極體其結構先天上之限制，使得藉 由使用粗糙之頂面增加之光輸出效率仍具有一限制。 【發明内容】 有鑑於此，為了解決上述問題，本發明之主要目的在 於提供一種發光二極體，其在完成磊晶之步驟後，利用一 具有至少上一非垂直刃面之銳切工具或切银工具進行裂晶 (s a w i n g)之步驟，以得到一上窄下寬之發光二極體，且此 發光二極體至少具有一非垂直之切割面，當二極體内所產 生之光藉由切割面輸出至外部時，由於出射角變小，光輸 出之效率因而提昇，以解決傳統發光二極體立方結構，易 將光侷限於晶粒内，導致發光效率降低的問題。 本發明之另一目的，係提供一種發光二極體之製造方0691 -9222 ^ rWF (N1); A0C-02-1 3-TW; PHOELIP. Pt d page 5 1223901 V. Description of the invention (2) Diode 1 0, which has a substrate 1 2, a diode The light-emitting structure area 14 and a thick transparent window layer 5 use this thick transparent window layer (about 50 β m) to increase the light exit area by the side edge 16 and lead to extra light, which makes the diode Light emission increases. However, the refractive index (about 1.6) of the best transparent window layer currently available is still much lower than that of the medium adjacent to the crystal grains, and the poor characteristics of the interface between the transparent window layer and the semiconductor film layer (such as resistance generation), Causes restrictions on the use of this technology. The use of a rough top surface is also a well-known technique in the industry for reducing the reflectivity of the bottom surface of a component. This kind of rough top surface can increase the output especially when used in combination with a bottom-reflective element, because the light beam that was originally reflected will be scattered outward, but according to Snell's law (S ne 1 Γ s 1 aw, it also refracts Law), due to the inherent limitation of the structure of the vertical sidewall diode, the light output efficiency increased by using a rough top surface still has a limit. [Summary of the Invention] In view of this, in order to solve the above problems, the main object of the present invention is to provide a light-emitting diode, which uses an acute cutting tool or at least one non-vertical cutting edge surface after completing the epitaxial step. The silver-cutting tool performs a sawing step to obtain a light-emitting diode with a narrow upper and lower width, and the light-emitting diode has at least a non-vertical cutting surface. When the light generated in the diode is borrowed, When outputting from the cutting surface to the outside, the light output efficiency is improved due to the smaller exit angle, so as to solve the problem of the traditional light-emitting diode cubic structure, which is easy to confine light to the crystal grains, resulting in a decrease in light-emitting efficiency. Another object of the present invention is to provide a method for manufacturing a light emitting diode.
0691-922 im(N1); A0C - 02 -1 3 - l^V; PHOEi. IP. p t d 第 6 頁 1223901 五、發明說明（3) 法，以獲致本發明所述具有一非垂直之切割面且上窄下寬 之發光二極體。 為獲致上述之目的，本發明所述之發光二極體，至少 包括一基底，其底部具有一第一表面，於該基板之第一表 面相反側具有一第二表面；複數之半導體膜層所構成之蠢 晶層，其具有一第三表面於該磊晶層底部及一在第三表面 相反側之一第四表面，上述蠢晶層係形成上述基底之上， 以上述第三表面與上述基底之第二表面接觸，且上述基底 及上述磊晶構成該發光二極體之發光晶粒；一第一導電型 電極位於上述第一表面上，及一第二導電型電極位於上述 第四表面上，其特徵在於上述第一表面及上述第四表面大 體為一平面，且上述第一表面之面積係大於上述第四表面 之面積。 根據上述之發光二極體，其發光晶粒可形成一上窄下 寬之圓柱體、一上窄下寬之角柱體、一六面體、一由圓柱 體及角柱體所組成上窄下寬之形體或一由圓柱體及六面體 所組成上窄下寬之形體。 本發明所述之發光二極體亦具有另一形式，其至少包 含一基底，其底部具有一第一表面，於該基板之第一表面 相反側具有一第二表面，複數之半導體膜層所構成之蠢晶 層，其具有一第三表面於該蠢晶層底部及一在第三表面相 反側之一第四表面，上述蠢晶層係形成上述基底之上，以 上述第三表面與上述基底之第二表面接觸，且上述基底及 上述蠢晶構成該發光二極體之發光晶粒，一弟一導電型電0691-922 im (N1); A0C-02 -1 3-l ^ V; PHOEi. IP. Ptd page 6 1223901 V. Description of the invention (3) method to obtain a non-vertical cutting surface according to the present invention The light-emitting diodes are narrow above and wide below. In order to achieve the above-mentioned object, the light-emitting diode according to the present invention includes at least a substrate having a first surface at the bottom and a second surface opposite to the first surface of the substrate; a plurality of semiconductor film layers The stupid crystal layer has a third surface at the bottom of the epitaxial layer and a fourth surface on the opposite side of the third surface. The stupid layer is formed on the substrate, and the third surface and the above The second surface of the substrate is in contact, and the substrate and the epitaxial crystal constitute the light-emitting diode of the light-emitting diode; a first conductive type electrode is located on the first surface, and a second conductive type electrode is located on the fourth surface It is characterized in that the first surface and the fourth surface are substantially flat, and an area of the first surface is larger than an area of the fourth surface. According to the above-mentioned light-emitting diode, the light-emitting crystal grains can form a cylinder with a narrow upper width, a corner with a narrow upper width, a hexahedron, and a narrow and wide bottom consisting of a cylinder and a corner cylinder. A shape or a shape consisting of a cylinder and a hexahedron with a narrow top and a wide bottom. The light-emitting diode according to the present invention also has another form, which includes at least a substrate, a bottom surface having a first surface, a second surface opposite to the first surface of the substrate, and a plurality of semiconductor film layers. The stupid crystal layer has a third surface on the bottom of the stupid layer and a fourth surface on the opposite side of the third surface. The stupid layer is formed on the substrate, and the third surface and the above The second surface of the substrate is in contact with each other, and the substrate and the stupid crystal form the light-emitting crystal of the light-emitting diode.
0691 -922211VF(N1); AOC-02-13-rHV； PHOHLIP. pid 第7頁 1223901 五、發明說明u) 極位於上述第一表面上，及一第二導電型電極位於上述第 四表面上，其特徵在於上述發光晶粒之底部具有一第五表 面，該晶粒之頂部具有一第六表面，而該第五表面係為一 平面，上述第六表面係為一弧面或是一曲面，且使該晶粒 具有一拱頂形之結構。 根據上述之發光二極體，其為一弧面或是一曲面之第 六表面係可延伸至上述第五表面之邊緣，而該發光二極體 更可包括具有一或一以上之側壁，俾使上述為一弧面或是 一曲面之第六表面藉由上述側壁延伸至上述第五表面之邊 緣。根據上述之發光二極體，本發明所述之發光二極體其 發光晶粒可形成一半圓體、一半橢圓體、一角錐體、一底 部為六面體之半圓體、一底部為六面體之半橢圓體或一底 部為六面體之角錐體。且上述之發光二極體。 在本發明之一較佳實施例中，本發明所述之發光二極 體其可具有一或一以上之切割面，該切割面之形狀係擇自 平面、曲面、弧面及其結合所組成之族群，而該切割面亦 可為粗糙、具有波紋或具有凹槽之壁面。 基於本發明之另一目，本發明係關於提供一種發光二 極體之製作方法，其步驟至少包括提供一基底，並形成複 數之半導體膜層所構成之磊晶層於該基底，而該基底之底 部具有一第一表面，而該複數之半導體層頂部具有一第二 表面，形成一第一導電性電極於上述第一表面，形成複數 個第二導電性電極於部份之上述第二表面，上述基底、蠢 晶層、第一導電性電極及第二導電性電極構成一發光二極0691 -922211VF (N1); AOC-02-13-rHV; PHOHLIP. Pid Page 7 1223901 V. Description of the invention u) A pole is located on the first surface and a second conductivity type electrode is located on the fourth surface. It is characterized in that the bottom of the light-emitting die has a fifth surface, the top of the die has a sixth surface, and the fifth surface is a plane, and the sixth surface is an arc surface or a curved surface. And the crystal grains have a dome-shaped structure. According to the above-mentioned light-emitting diode, the sixth surface, which is a curved surface or a curved surface, may extend to the edge of the fifth surface, and the light-emitting diode may further include one or more side walls. The sixth surface which is an arc surface or a curved surface is extended from the side wall to an edge of the fifth surface. According to the light-emitting diodes described above, the light-emitting diodes of the light-emitting diodes of the present invention can form half-round bodies, half-ellipsoids, pyramids, semi-circular bodies with a hexahedron at the bottom, and six faces with a bottom. A semi-ellipsoid or a pyramid with a hexahedron at the bottom. And the above-mentioned light-emitting diode. In a preferred embodiment of the present invention, the light-emitting diode according to the present invention may have one or more cutting surfaces, and the shape of the cutting surface is selected from a plane, a curved surface, an arc surface, and a combination thereof. And the cutting surface may be a rough, corrugated or grooved wall surface. Based on another object of the present invention, the present invention relates to a method for manufacturing a light emitting diode, the steps of which include at least providing a substrate and forming an epitaxial layer composed of a plurality of semiconductor film layers on the substrate, and the substrate The bottom has a first surface, and the top of the plurality of semiconductor layers has a second surface. A first conductive electrode is formed on the first surface, and a plurality of second conductive electrodes is formed on the second surface. The substrate, the stupid crystal layer, the first conductive electrode and the second conductive electrode constitute a light emitting diode.
0691-9222WF( N1); A0C- 02 -13 - π; ； PHOELIP. P t d 第8頁 1223901 五、發明說明C5) 體晶圓複合物，接著切裂（s a w 1 n g )上述發光二極體晶圓複 合物，得到一上窄下寬之發光晶粒。 根據上述之發光二極體之製作方法，其中切裂 (s a w 1 n g )上述發光二極體晶圓複合物係利用一銑切工具或 切鋸工具，而上述銑切工具或切鋸工具係具有至少一非垂 直刃面，當該刃面接觸及切裂（s a w i n g )上述發光二極體晶 圓複合物時，得到之發光晶粒至少具有一非垂直之切割 面。 本發明之特徵在於本發明所述之發光二極體，其對於 基底及半導體膜層之選用、半導體膜層之形成方式或是導 電性電極之形成皆可承習既有之技術，只需在切裂 (s a w i n g )發光二極體晶圓複合物之步驟（也就是裂晶步驟） 時，更換銑切工具（切鋸工具），改用具有至少一非垂直刃 面之銑切工具（切鋸工具），當該刃面切裂上述發光二極體 晶圓複合物時，得到一上窄下寬之發光晶粒，且其至少具 有一非垂直之切割面，不同以往習知技術在在裂晶步驟 後，所得到之立方體形晶粒。且由於所形成之切割面係為 非垂直基板底部之平面、弧面或是曲面，當二極體内所產 生之光藉由切割面輸出至外部時，更可縮小切割面法線與 出射光之夾角，使光不因折射率的關係而被侷限於發光二 極體内。 為使本發明之上述目的、特徵能更明顯易懂，下文特 舉較佳實施例，並配合所附圖式，作詳細說明如下：0691-9222WF (N1); A0C- 02 -13-π;; PHOELIP. P td Page 8 1223901 V. Description of the invention C5) bulk wafer composite, and then cleave (saw 1 ng) the above light-emitting diode crystal Round the composite to obtain a light-emitting crystal with a narrow top and a wide bottom. According to the method for manufacturing a light emitting diode described above, wherein the light emitting diode wafer composite is saw 1 ng using a milling tool or a sawing tool, and the milling tool or the sawing tool has At least one non-vertical cutting surface. When the cutting surface contacts and saws the light-emitting diode wafer composite, the obtained light-emitting die has at least one non-vertical cutting surface. The present invention is characterized in that the light-emitting diodes described in the present invention can learn the existing technology for the selection of the substrate and the semiconductor film layer, the formation method of the semiconductor film layer, or the formation of the conductive electrode. In the step of sawing the light emitting diode wafer composite (ie, the step of cracking crystals), replace the milling tool (cutting saw tool) with a milling tool (cutting saw with at least one non-vertical edge surface) Tool), when the blade surface cuts the light-emitting diode wafer composite, a light-emitting die with a narrow upper and lower width is obtained, and it has at least a non-vertical cutting surface. After the crystallization step, the cube-shaped grains obtained. And because the cutting surface formed is a plane, arc, or curved surface at the bottom of the non-vertical substrate, when the light generated in the diode is output to the outside through the cutting surface, the normal and outgoing light of the cutting surface can be reduced. The included angle prevents light from being confined to the light-emitting diode due to its refractive index. In order to make the above-mentioned objects and features of the present invention more comprehensible, preferred embodiments are described below in detail with the accompanying drawings, as follows:
0691-9222TWF(Nl);AOC-02-13-^V；PHOELIP.ptd 第9頁 1223901 五、發明說明（6) 【實施方式】 以下將配合圖式詳細說明本發明之較佳實施例： 發光二極體晶圓複合物之製作 請參照第2圖’提供一基底1 2 0，其具有一第一表面 i 3 1於其底部，一第二表面於其頂部1 3 2，且第一表面1 3 1 與第二表面1 3 2係在該基底之相反側。在此，基底一詞係 指任何適用之二極體基板，包括一複晶（P 〇 1 y c r y s t a 1 )基 板或非晶系（Amorphous )基板，在此可以是磷化鎵（Gap)、 磷砷化鎵（GaAsP)、硒化鋅（ZnSe)、硫化鋅（ZnS)、硒化鋅 硫（Z n S S e )、碎（S i )或碳化石夕（S i C )基板，其上可已形成所 需之膜層，例如是一布拉格反射層。該基底1 2 0可為多層 結構，不過此處為了簡化圖式，僅以一層平整的基底表示 之。接著，形成複數之半導體膜層所構成之磊晶層1 4 〇於 該基底上，該磊晶層140係具有一第三表面133及一第四表 面1 3 4，且該磊晶層1 4 0係以該第三表面1 3 3形成於上述基 底之第二表面132上。該構成磊晶層140之複數半導體層， 可以包含一或一以上之束缚層、緩衝層、主動層或是接觸 層，其形成之方法可由液相磊晶法（LPE )、氣相磊晶法 (VPE)或是有機金屬氣相蠢晶法（M0CVD)所形成。最後形成 一第〆導電性電極1 7 0於上述第一表面1 3 1 ，形成複數個第 二導電性電極172於部份之上述第四表面134，至此，完成 發光二極體晶圓複合物1 0 0之製作。而作為電極之材質， 可擇自由鈾（Pt)、鈷（Co)、金（Au)、鈀（Pd)、鎳（Ni )、鎂 (M g )、銀（A g )、鋁（A 1 )、釩（V )、錳（Μ η )、鉍（B i )、鍊0691-9222TWF (Nl); AOC-02-13- ^ V; PHOELIP.ptd Page 91223901 V. Description of the Invention (6) [Embodiment] The following describes the preferred embodiment of the present invention in detail with the drawings: Please refer to FIG. 2 for the fabrication of the diode wafer composite. A substrate 1 2 0 is provided, which has a first surface i 3 1 at its bottom, a second surface at its top 1 3 2, and a first surface. 1 3 1 and the second surface 1 3 2 are on the opposite side of the substrate. Here, the term substrate refers to any applicable diode substrate, including a polycrystalline (P 001 ycrysta 1) substrate or an amorphous (Amorphous) substrate, which may be gallium phosphide (Gap), phosphorous arsenic Gallium (GaAsP), zinc selenide (ZnSe), zinc sulfide (ZnS), zinc selenide (Z n SS e), broken (S i), or silicon carbide (S i C) substrates may be A desired film layer is formed, such as a Bragg reflective layer. The substrate 120 may have a multi-layer structure, but for the sake of simplification, only one flat substrate is used here. Next, an epitaxial layer 1 4 composed of a plurality of semiconductor film layers is formed on the substrate. The epitaxial layer 140 has a third surface 133 and a fourth surface 1 3 4, and the epitaxial layer 1 4 0 is formed on the second surface 132 of the substrate with the third surface 1 3 3. The plurality of semiconductor layers constituting the epitaxial layer 140 may include one or more tie layers, buffer layers, active layers, or contact layers. The formation method thereof may be a liquid phase epitaxy (LPE) method or a gas phase epitaxy method. (VPE) or organic metal vapor phase stupid method (MOCVD). Finally, a first conductive electrode 170 is formed on the first surface 1 3 1, and a plurality of second conductive electrodes 172 are formed on a part of the fourth surface 134. Thus, the light-emitting diode wafer composite is completed. 1 0 0 making. As the material of the electrode, free uranium (Pt), cobalt (Co), gold (Au), palladium (Pd), nickel (Ni), magnesium (Mg), silver (Ag), and aluminum (A1) can be selected. ), Vanadium (V), manganese (Μ η), bismuth (B i), chain
()691 - 9222TWF( Ν Π ; A〇C- 02 · 1 3 -TW; ph()F丄 11). p t d 第10頁 1223901 五、發明說明（7) (Re)、銅（Cu)、錫（Sn)、铑（Rh)、鈦（Τι)、鉬（M〇）、鎢 (W )、鋅（Ζ η )、鉻（C r )、銳（N b )、铪（Η Π及其合金所組成 之族群中。 發光二極體之製作 本發明所述之形成發光二極體晶圓複合物1 0 0之方法 可承習既有之技術，而本發明之發光二極體製方式與習知 技術最大之差別在於發光二極體之晶粒形狀，取決於發光 二極體晶圓複合物1 0 0切割的方式。請參照第3 a圖及第3 b 圖，顯示習知發光二極體之切割方式，其係利用具有幾近 垂直刃面2 1 0之銑切工具（切鋸工具）2 0 0來切割發光二極體 晶圓複合物1 0 0，請參照第4圖，所得到之發光二極體晶粒 係為一立方結構，其切割面1 9 0幾近垂直於該基底之第一 表面1 3 1。 請參照第5a圖.及第5b圖，顯示本發明一較佳實施例之 發光二極體切割方式，其係利用具有至少一非垂直刃面 3 1 0之銑切工具（切鋸工具）3 0 0來切割發光二極體晶圓複合 物1 0 0，該銳切工具（切鋸工具）之刃面可為傾斜之平面、 弧面、曲面或為其混合，經切割所得之發光晶粒之切割面 之形狀可擇自平面、曲面、弧面及其結合所組成之族群， 且藉設該銑切工具其刃面（切鋸工具）之設計，所得之切割 面可為粗糙、具有波紋或具有凹槽之壁面。切割後所得之 晶粒，其形狀係可為一上窄下寬之圓柱體、一上窄下寬之 角柱體、一六面體、一由圓柱體及角柱體所組成上窄下寬() 691-9222TWF (Ν Π; A〇C-02 · 1 3 -TW; ph () F 丄 11). Ptd page 10 1223901 V. Description of the invention (7) (Re), copper (Cu), tin (Sn), rhodium (Rh), titanium (Ti), molybdenum (M0), tungsten (W), zinc (Z η), chromium (C r), sharp (N b), rhenium (Η) Π and alloys thereof In the group formed, the production of light-emitting diodes The method of forming the light-emitting diode wafer composite 100 described in the present invention can be learned from existing technologies, and the light-emitting diode system and method of the present invention The biggest difference in the known technology is the crystal shape of the light-emitting diode, which depends on the method of cutting the light-emitting diode wafer composite 100. Please refer to Figures 3a and 3b to show the conventional light-emitting diodes. The cutting method of the body is to use a milling tool (cutting saw tool) 2 0 with a nearly vertical cutting surface 2 1 0 to cut the light emitting diode wafer composite 1 0 0. Please refer to FIG. 4. The obtained light-emitting diode crystal grains have a cubic structure, and its cutting surface 1900 is almost perpendicular to the first surface 1 31 of the substrate. Please refer to FIG. 5a and FIG. 5b, which show a comparison of the present invention. Development of the best embodiment Photodiode cutting method, which uses a milling tool (cutting saw tool) 3 0 0 with at least one non-vertical cutting surface 3 1 0 to cut the light emitting diode wafer composite 100, the sharp cutting tool ( The cutting surface of the cutting tool can be inclined plane, arc surface, curved surface or a mixture of them. The shape of the cutting surface of the light-emitting crystals obtained after cutting can be selected from the group consisting of plane, curved surface, arc surface and their combination And, by designing the cutting surface (cutting saw tool) of the milling tool, the obtained cutting surface can be rough, corrugated or grooved wall surface. The shape of the grains obtained after cutting can be one. Cylinder with narrow lower width, one corner cylinder with narrow upper width, one hexahedron, one with cylinder and corner cylinder
0691 -9222TWF(N1);AOC-02 -13 - ΓΠν ；PHOELIP.p t d 第11頁 1223901 五、發明說明（8) 之形體或一由圓柱體及六面體所組成上窄下寬之形體。在 某此些較佳實施例中，切割後所得之發光晶粒係形成一半 圓體、一半憜圓體、一底部為六面體之半圓體或一底部為 六面體之半橢圓體，請參照第6a圖及第6b圖所示。 請參照第7圖及第8圖，由於切割後所得之晶粒具有斜 坡狀（傾斜）之切割面，依據斯奈爾定律（S n e Π ’ s 1 a w )， 此二極體所產生之光線其出射角較具垂直側壁二極體來的 小，故更易由將光輸出至外部，且亦根據朗伯定律 (L a m b e r 1 a w )，考慮光吸收之問題，由傾斜之切割面引 出之光強度高於由側壁所引出之光。因此，本發明所述之 發光二極體其性能顯著高優於具有垂直側壁的傳統發光二 極體。 綜上所述，本發明之發光二極體晶，係藉由改變銑切 工具（切鋸工具）之切割刃面，使經磊晶步驟後所得之發光 二極體晶圓複合物，在進行切割之步驟時，可以產生具有 非與基底底部垂直之切割面，使切割後所得之晶粒呈上窄 下寬之立體結構。由於所形成之切割面係為非垂直基板底 部之平面、弧面或是曲面，當二極體内所產生之光藉由切 割面輸出至外部時，更可縮小切割面法線與出射光之夾 角，使光不因二極體材質與外部介質折射率相差甚大之關 係而被侷限於發光二極體内，如此一來，可增加光輸·出至 二極體外部之效率，使發光二極體發光效率提昇。且依本 發明所述之製造方法，形成發光二極體之步驟皆可承習既 有之技術，僅需藉由預先設計並製造合用之銑切工具（切0691 -9222TWF (N1); AOC-02 -13-ΓΠν; PHOELIP.p t d page 11 1223901 V. Description of the invention (8) The shape or a shape consisting of a cylinder and a hexahedron with a narrow upper and lower width. In some of these preferred embodiments, the light-emitting grains obtained after cutting are formed into a semi-circular body, a semi-circular body, a semi-circular body with a hexahedral bottom or a semi-ellipsoid with a hexahedral bottom, Refer to Figures 6a and 6b. Please refer to Fig. 7 and Fig. 8. Since the grains obtained after cutting have sloped (inclined) cutting surfaces, according to Snell's law (S ne Π 's 1 aw), the light generated by this diode Its exit angle is smaller than that of a diode with a vertical side wall, so it is easier to output light to the outside, and according to Lambert's law (L amber 1 aw), considering the problem of light absorption, the light from the inclined cutting surface The intensity is higher than the light drawn from the side walls. Therefore, the performance of the light-emitting diode according to the present invention is significantly higher than that of a conventional light-emitting diode having a vertical sidewall. In summary, the light-emitting diode crystal of the present invention is made by changing the cutting edge surface of a milling tool (cutting saw tool), so that the light-emitting diode wafer composite obtained after the epitaxial step is performed. In the cutting step, a cutting surface that is not perpendicular to the bottom of the substrate can be generated, so that the crystal grains obtained after cutting have a three-dimensional structure with a narrow upper width. Because the cutting surface formed is a plane, arc, or curved surface at the bottom of the non-vertical substrate, when the light generated in the diode is output to the outside through the cutting surface, the normal of the cutting surface and the emitted light can be further reduced. The included angle prevents light from being confined to the light emitting diode due to the large difference between the refractive index of the diode material and the external medium. In this way, the efficiency of light output and output to the outside of the diode can be increased, making the light emitting diode Polar body luminous efficiency is improved. And according to the manufacturing method of the present invention, the steps of forming the light-emitting diode can be learned from the existing technology, and only need to pre-design and manufacture a suitable milling tool (cutting
0691 -9222m(N1); AOC-02-13-Ήν ； PHOELIP. ptd 第12頁 1223901 五、發明說明（9) 鋸工具）進行切割（裂晶）即可，使得本發明所揭示之製造 方法易於實施且適於大量生產。 本發明雖以較佳實施例揭露如上，然其並非用以限定 本發明的範圍，任何熟習此項技藝者，在不脫離本發明之 精神和範圍内，當可做各種的更動與潤飾，因此本發明之 保護範圍當視後附之申請專利範圍所界定者為準。0691 -9222m (N1); AOC-02-13-Ήν; PHOELIP. Ptd Page 12 1223901 V. Description of the invention (9) Saw tool) can be cut (cracked), making the manufacturing method disclosed in the present invention easy Implemented and suitable for mass production. Although the present invention is disclosed as above with a preferred embodiment, it is not intended to limit the scope of the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
0691 -9222TWF(NM ) ;Α(Γ-()2-13-OV；PH0ELIP.ptd 第Γ3頁 1223901 圖式簡單說明 第1圖係顯示習知之發光二極體結構剖面圖。 第2圖係顯示根據本發明所述之發光二極體晶圓複合 物之剖面圖。 弟3 a圖及弟3 b圖係顯不習知之發光二極體之橫切面及 所用之切鋸刀剖面圖。 第4圖係顯示根據習知發光二極體之結構剖面圖。 第5 a圖及第5 b圖係顯示本發明所述之發光二極體之橫 切面及所用之切鑛刀剖面圖。 第6 a圖及第6 b圖係顯示本發明所述之發光二極體之橫 切面及所用之切鋸刀剖面圖。 第7圖係顯示根據本發明所述之發光二極體一較佳實 施例之結構剖面圖。 第8圖係顯示根據本發明所述之發光二極體一較佳實 施例之結構剖面圖。 【符號說明】 1 0〜二極體晶粒； 12〜基底； 1 4〜二極體發光結構區 1 5〜透明窗戶層； 1 6〜透明窗戶層側壁； 1 0 0〜電性連接端； 1 2 0〜基底， 131〜第一表面；0691 -9222TWF (NM); Α (Γ-() 2-13-OV; PH0ELIP.ptd page Γ3, page 1223901 Brief description of the diagram Figure 1 shows a conventional cross-sectional view of the structure of a light emitting diode. Figure 2 shows The cross-sectional view of the light-emitting diode wafer composite according to the present invention. Figure 3a and Figure 3b are cross-sections of the unfamiliar light-emitting diode and a cross-sectional view of a saw blade used. The figure is a cross-sectional view of the structure of a conventional light-emitting diode. Figures 5a and 5b are cross-sections of the light-emitting diode according to the present invention and a cross-sectional view of a mining knife used. Section 6a Figures and Figure 6b are cross-sectional views of the light-emitting diodes and cross-sections of the saw blade used in the present invention. Figure 7 shows a light-emitting diode according to a preferred embodiment of the present invention. Sectional view of structure. Fig. 8 is a sectional view of a structure of a light emitting diode according to a preferred embodiment of the present invention. [Symbols] 1 0 ~ diode grains; 12 ~ substrate; 1 4 ~ 2 Polar light-emitting structure area 15 to transparent window layer; 16 to transparent window layer side wall; 100 to electrical connection end; 120 to substrate 131~ a first surface;
0691-922T\W(N1); A0C- 02 - ] 3 -； PHOELIP. p t d 第14頁 1223901 圖式簡單說明 1 3 2〜第二表面； 1 3 3〜第三表面； 1 3 4〜第四表面； 1 4 0〜複數半導體層構成之磊晶層； 1 7 0〜第一導電型電極； 1 7 2〜二極體之發光面積； 1 9 0〜垂直之切割面； 1 9 2、1 9 4〜非垂直之切割面； 2 0 0、3 0 0、4 0 0〜銑切工具（切鋸工具）； 210、310、410〜銑切工具（切鋸工具）之刃面。0691-922T \ W (N1); A0C- 02-] 3-; PHOELIP. Ptd Page 14 1223901 Brief description of the drawings 1 3 2 to the second surface; 1 3 3 to the third surface; 1 3 4 to the fourth The surface; an epitaxial layer composed of a plurality of semiconductor layers; a range of 170 to a first conductivity type electrode; a luminous area of a diode to a range of 1 to 2; a cut surface perpendicular to the range of 1 to 9; 9 4 ~ non-vertical cutting surface; 2 0 0, 3 0 0, 4 0 0 ~ milling tool (cutting saw tool); 210, 310, 410 ~ cutting surface of milling tool (cutting saw tool).
0691 -9222TWF( N1); AOC- ()2 - LVHV; PHOELIP. p t d 第15 I0691 -9222TWF (N1); AOC- () 2-LVHV; PHOELIP. P t d No. 15 I
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