TWI222761B - Light-emitting diode and its manufacturing method - Google Patents

Abstract

A kind of light-emitting diode (LED) and its manufacturing method are disclosed in the present invention. The invention at least contains a die-carrying base, an LED die having plural semiconductor layers and a patterned substrate; the first type electrode and the second type electrode. The first type electrode and the patterned substrate are located on the bottom part of plural semiconductor layers. When the die is bonded to the die-carrying base, the first type electrode is electrically connected to the first type electrode contact region on the electrode die-carrying base; and one wire-bonding step is used to complete the electric connection of the second type electrode. The electrodes of LED stated above are located at different sides of the chip such that it is capable of eliminating the problems, such as the requirement of performing the secondary wire-bonding step, poor diode heat dissipation and reduction of light-emitting area, generated in the prior art where electrodes are disposed on the same side to obtain electric connection.

Description

1222761

1222761 V. Description of the invention (2) The crystal grain 1 has a p-type thunder, the n-type electrode 3 is oriented to ^ / 1-type electrode 3 ′, and the P-type electrode 2 and-have a plurality of semiconductor layers; Figure 1b. The plurality of semiconductor layers formed. 4 ^ The crystal grains 1 of the sapphire substrate are removed. The more the bottom of the sapphire substrate 4 is, the more the n-type electrode 3 faces upward, and the solid crystal surface 13 is bonded. , And then (7 as a ^ grain bearing seat)-In this way, the wires 9 are electrically connected to the square carrier of the bonding body ^ 6, 7 2 electrode 2 & the 11 type electrode 3 and the wire The bonded light-emitting diodes 10 are encapsulated so as to have an electrical and mechanical connection with the carrier 5 = 10Λ. The heat generated when the temperature is relatively low; the structural phase ... the light will cause the diode to accumulate the heat dissipation efficiency of D — = 1, unstable, lower diode, bright; Diode light-emitting characteristics and due to the n-type electrode 3 and p-type thunder pole? + Menshijili electrode configuration. In this way, the semiconductor layer (active matrix product, reduces the luminous efficiency of the element and brightens i.-The light emitting surface of the polar body element) In addition, this type of assembly requires a relaxed electrical connection, and the wire 9 connects the light emitting Λ- The wire bonding is used to enter the lamp connection ends 6, 7, and the formed coil electrode M and «, and the loop must occupy a considerable amount.

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1222761 V. Description of invention (3) Large space. It is undoubtedly a disadvantage for the current luminescence element. In view of this, in order to solve this problem, a light-emitting diode is provided, the main purpose of which is to remove = Ming, in order to set the -type-electrode to "in :: bulk crystal grains" Part of the base, when the die is bonded to the die carrier, the -type-electrode contact of the 1f die carrier on the semiconductor film layer above the d: extremely direct wire bonding step to solve the conventional technology in When using an electrical connection to reduce the substrate of the crystal layer, the non-conductive material is used to achieve the electrical connection. As a result, it is necessary to wire the electrodes twice, and the dispersion is placed in the same- problem. A hair is provided to obtain the light-emitting diode using the non-conductive electrode plate according to the present invention, and the two-pole light-emitting diode is used for achieving the above-mentioned purpose. The hair according to the present invention includes a grain bearing base. The grain bearing base has y ::: pole contact area on it;-a light emitting diode grain ::; ":"; said first type electrode and base = i ΐ ΐ: Type II electrodes are located on top of the multiple semiconductor layers, and: on,; day position Different sides of the grain, and the grain in the opposite side of the solid soil of FIG. ^ Bonded to the solid surface of the crystal grains of the supporting base, of the die of

0691 · 937 (Qing⑽); page 7 edits the hidden L 关 丨 U1 V. Description of the invention (4) A type electrode and the above crystal 'junction, and a second type 4 thunder block first The second type contact region of the electrically connected conjoined grains of the type electrode contact region is electrically connected with the above-mentioned two-pole root electrode by a wire. According to the present invention, the bottom of the plurality of semiconductor layers has a bipolar body, and the light-emitting diode grains are connected at the body layer at 11] having a first surface, and the substrate is connected to the plurality of semiconductors, and the first A cousin has a surface, the first surface is the first type of lightning with the second surface grains, and the area is larger than that of the second surface, and the above surface. σ 糸 is located on the first table that is not in contact with the second surface. The body-based manufacturing of the pellet bearing seat provides a substrate with a semi-conductive cover to remove a part of the base substrate; the side of the patterned semiconductor layer is formed , The first diode crystallinity of the solid crystal carrier of the carrier is connected. Another method of the invention, the step of which has a solid crystal 5 on which a physical layer constitutes a layer on the above-mentioned hair plate so that the substrate of the first shape is the same as the top and the surface of the crystal is on the surface 5 and the type electrode is contacted The second-type electric eye, the present invention includes at least a lifting surface and a first plurality of semi-luminescent diodes. The light-emitting diodes are on the above-mentioned complex side; and a first-type patterned base of the crystal grains is formed. The second-region electrical connection electrode and a second system are provided for providing a die-bearing electrode to contact the conductor layer, and the die is formed; Combined with a type-I electrode and a type-I electrode with a light-emitting diode carrier, the crystal region is on it; § the substrate and the definition of a figure, and a pattern and a patterned bottom and The difference between the plurality of grains is that the above-mentioned grains bear the above-mentioned grain-bearing wires and the above-mentioned contact area is used as electricity

Ptd

1222761 V. Description of the invention (5) The present invention is based on conventional techniques. The present invention is an example of a semiconductor film formed on a part of a substrate. The use of a body layer, but the first layer, the electrode of the first type electrode with a different type of contact between the particles is connected to the invention. Formed on the aa line to reach the electrode and the second type. In order to make this move better implemented in the conductive material of the present invention, the electrode is a plurality of half-type electrodes on the diode side. The light emitting diode is arranged on the conductor layer and is the first junction of the crystal grains. For example, P, connection is the characteristic pattern, and the light emitting diode is different from the substrate on the semiconductor layer. After the step on the substrate, the first type electrode and the second type electrode and the die carrier are exposed after removing and removing part of the substrate. This and the conventional technique need to be performed twice. A line is required to connect the second type. The electric power can be more clearly defined and easy to understand. The following description is as follows: [Embodiment] The invention will be described in detail below with reference to the drawings. Please refer to it, which shows this iid: Example: substrate! 2 0, the method of the present invention is applicable to the step f of the printing process. A board or a semiconductor substrate is provided, which may be a sapphire circuit board or a ceramic substrate. First, a plurality of "boards" or a sharp-stone board are formed on the above-mentioned substrate 120. The semiconductor layer 13 and the above-mentioned substrate 120 are composed of a bulk layer 130 'this plurality of diode crystal grains 丨 丨 0 when an electric current is applied, an umbrella crystal grain 1 1 0' is arbitrarily selected as a free P-type binding layer , Η-type binding layer, half-toss layer to 130 groups of touchable layers. The semiconductor layer 130 can be punched, lined, and connected "by liquid phase, stone surface, surface (LPE), vapor phase epitaxy (VPE), or organic gold from phase Qiu Riri. It is a rolling phase. Crystal method

m 0691-9379rrWF (Nl); AOC-02-17-rnV; PHOELIF.ptd page 9

1222761 V. Description of the invention (6) (M 0 C V D). The composition of the diode grains may also include a distributed Bragg reflector (DBR), a transparent contact layer, or a multiple quantum well layer. In a preferred embodiment, the die may be a gallium nitride (GaN) series light-emitting device grown on a sapphire substrate by an organic metal vapor phase epitaxy (MOCVD). Then, an electrode is formed on the top portion of the plurality of semiconductor layers 130 of the crystal grain 110, as the second-type electrode 1440 of the crystal grain. The material of the electrode can be selected from platinum (Pt), cobalt (Co), gold (Au), palladium (Pd), nickel (Ni), magnesium (Mg), silver (Ag), | Lu (A1), thorium ( V), Meng (Μη), Silk (Bi), Baht (Re), Copper (Cu), Tin (Sn), Record (Rh), Titanium (Ti), Molybdenum (Mo), Crane (W), Word ( Zn), Cr, Nb, Hf, and their alloys. Next, please refer to Figure 2b to form and define a patterned cover layer 150 above. On the substrate 1 2 0 of the die 1 1 0, the patterned masking layer 1 50 is used as the remaining mask to carry out a more than one procedure, and a portion of the substrate 1 2 0 is engraved with money and removed. The lower surface of the semiconductor film layer exposed on the back of some substrates is 1 2 3, please refer to Figure 2c. The etching process to etch out some substrates can be a dry etch, you can use money to hit I insect etch (spu 11 eringetch), reactive ion surname Etch (reactivei ο netching, RIE), magnetically enhanced reactive ion I worm etch (magnetically enhanced RIE, MERIE), electron cyclotron resonance (ECR) | worm etch or inductive coupling The plasma etching process (ICP, TCP) and other methods, the molecules used as the reaction gas can be gas molecules containing fluorine compounds, gas molecules containing sulfur compounds, oxygen and auxiliary gas molecules (such as inert gases).

I

0691 -9379TWF (N1); AOC-02-17-TW; PHOELIP. Ptd Page 10 1222761 V. Description of the invention (7) Next, please refer to Figure 2d, the semiconductor film layer exposed after removing part of the substrate 120 An electrode is formed on the lower surface 1 3 2 as the first type electrode 140 a of the crystal grain. This electrode 140 a is formed on the bottom surface of the plurality of semiconductor layers 130 like the substrate 120. As the material of the first type electrode 140a, platinum (Pt), copper (Co), gold (Au), ls (Pd), nickel (Ni), town (Mg), silver (Ag), and aluminum (A1) can be selected. , Vanadium (V), manganese (Μη), bismuth (Bi), baht (Re), copper (Cu), tin (Sn), rhodium (Rh), titanium (Ti), molybdenum (Mo), tungsten (W) , Zinc (Zn), chromium (Cr), niobium (Nb), hafnium (Hf) and their alloys. Next, please refer to FIG. 2e, and provide a sun-dried water scorpion 200, which has a solid crystal surface 170 and a first type electrode contact area 160an, and the above-mentioned diode crystal grains 11 and the substrate 2 The 〇 side is fixed on the solid crystal surface 170 of the die carrier 200, and the first type electrode H0a (located on the same side as the substrate of the semiconductor layer) of the above-mentioned diode die 110 is supported by the die. The first type electrode contact area on the seat 2000 is contacted at 160a to achieve electrical connection. A metal bump can be formed on the first-type electrode 140a, or a bonding pad 162 can be formed on the first-type electrode contact area 160 and the first-type electrode 1403 and the electrode contact area 160a. Electrical connection 'to achieve electrical connection. The material of the metal bump: the ghost or the bonding pad 162 can be compatible with the material of the electrode :: suitable metal, alloy or composite film layer, for example, it can be a solder bump of two gold :: two tin silver alloy. The method of fixing the crystal grains on the crystal reed to fix the ^ a + solid crystal surface 1 70 can be-transparent bonding-I ^ 5 days such as BCB and epoxy resin (ep〇xy); low temperature can also be used Solder by resistance heating welding, ultrasonic welding, arc welding

1222761 Amendment No. 92129734 V. Description of the invention (9) In summary, the advantages of the light-emitting diode of the present invention: The flaw and its manufacturing method have the following: 1. The light-emitting diode of the present invention and its diode The second type of electrode system is formed on different sides of the crystal grain (the surface of the type electrode and the first layer is formed on the bottom of the semiconductor layer), = the heat generated by the diode of your conductor layer is accumulated on the same side, The method can prevent the carrier phase from being transmitted to the surface of the substrate with large particles, which can greatly help the heat dissipation of the light-emitting diode: product = carrier 5; ^ ° so The present invention = a diode made by a conventional technique, which has disadvantages such as unstable luminous characteristics and low lifetime due to accumulation of action heat. &Amp; Into the light emitting diode according to the present invention, the substrate is shifted to dispose the first type electrode on the semiconductor film layer which is removed from the substrate, so-here, no need The moving layer exposed after removing the board) is to set the first type electrode and the other semiconducting crossbones as you are in contact with the king, so the light emitting efficiency and brightness of the diode element will not be reduced. Please refer to Figure 7, Technique 3—Avoid the top view of the light-emitting side of the element. The area of the top of the semiconductor layer ^^ is not the same as the light-emitting area. The product of the second type electrode surface J is the light-emitting area 300. And Fig. 8 shows the light-emitting surface of the conventional technology. 3. The method of manufacturing the light-emitting diode according to the present invention requires only one wire bonding when the electrical bonding is configured, and & j Every 70-piece electrical connection requires only one lead wire, which not only meets the current trend of miniaturization of light-emitting components, but also has more convenience in manufacturing processes than conventional technologies. Although the sun and the moon are disclosed in the preferred embodiment as above, it is not intended to be limited. 〇69l-9379TWFl (Nl); AOC-02-17-TW.ptc

1222761 _ Case No. 92129734 V. Description of the invention (10) The scope of the invention is amended. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.

0691-9379TWFl (Nl); A0C-02-17-TW.ptc Page 14 1227761 Months of the diagram is simple and light @ ^--Figures 1a and 1b show the conventional light-emitting diode diagrams . Figures 2a through 2e are process flow diagrams showing a preferred 'embodiment according to the present invention. "Picture system", the member shows a sectional view of the structure of the light emitting diode hybrid embodiment according to the present invention.-Figure 4 is a sectional view of the structure of another embodiment of the light emitting diode according to the present invention. Η Figure H shows an embodiment of the light-emitting diode according to the present invention, and a bottom view of the diode grains. Compared with f Γι 6φ, the picture shows a light-emitting diode according to the present invention. The best implementation: the bottom view of the diode grains in Figure 7. Figure 7 shows a schematic diagram of the light-emitting area in the embodiment of the present invention. ^ This is the first-the car "" Figure 8 shows a diagram ％ Mao Mao Diode's luminous area is a schematic structure. The cross-section luminous pole is more solid / more solid. [Symbol] 1 ~ diode crystal grain; 2 ~ ρ type electrode; 3 ~ η type electrode; 4 ~ Substrate; 5 ~ carrier; 6, 7 ~ electrical connection terminal;

1222761 _ Case No. 92129734 _ Year Month Day __ Brief description of the drawing 8 ~ encapsulating resin; 9 ~ lead; 10 ~ light emitting diode; 11 ~ junction end of the wire; 1 ~ 3 ~ metal material layer; 14 ~ plural Semiconductor layer; 20 ~ diode light emitting area; 22 ~ semiconductor layer removed area; I 0 0 ~ light emitting diode;

II 0 ~ diode crystal grain; 120 ~ substrate; 130 ~ plural semiconductor layer; 132 ~ lower surface of semiconductor film layer exposed after removing part of substrate; 140a ~ first type electrode; 140b ~ second type electrode ; 1 4 4 ~ joint end point of the wire; 1 50 ~ cover layer; 160 a ~ first type electrode contact area; 160 b ~ second type electrode contact area;

1 6 2 ~ bonding pads; 1 6 4 ~ lead wires; 1 70 ~ area occupied by the substrate; 2 0 0 ~ die carrier; 2 0 ~ lead frame; 3 0 ~ light emitting area of the diode.

0691-9379TWF1 (N1); AOC-02-17-TW.ptc Page 16

Claims (1)

1222761 6. Scope of patent application 1. A light-emitting diode, at least comprising: a die-bearing base, the die-bearing base having a solid crystal surface and a first type electrode contact area thereon; a light-emitting diode A bulk crystal grain having a plurality of semiconductor layers, a first type electrode, a second type electrode, and a patterned substrate, wherein the first type electrode and the substrate are located at the bottom of the plurality of semiconductor layers, and the second type electrode It is located on the top of the plurality of semiconductor layers, and is on a different side from the first type electrode, and the crystal grains are fixed on the solid crystal surface of the crystal grain carrier with the patterned substrate side, and the first type electrode of the crystal grains. It is electrically connected to the first-type electrode contact area of the die carrier; and a second-type electrode electrical contact area is electrically connected to the second-type electrode of the diode grain by a wire. 2. The light-emitting diode according to item 1 of the scope of the patent application, wherein the light-emitting diode grains have a first surface at the bottom of the plurality of semiconductor layers, and the junction between the substrate and the plurality of semiconductor layers is Is a second surface, the first surface is in contact with the second surface, and the area of the first surface is larger than that of the second surface, and the first type electrode of the crystal grain is located after removing a part of the substrate On the first surface of the exposed semiconductor film layer. 3. The light-emitting diode according to item 1 of the scope of the patent application, wherein the electrical contact area of the second-type electrode is located on the above-mentioned die carrier. 4. The light-emitting diode according to item 1 of the scope of patent application, wherein the electrical contact area of the second-type electrode is located on a lead frame (1 e a d f r a m e). 5. The light-emitting diode according to item 1 of the scope of patent application, wherein the electrical contact area of the first type electrode has a bonding pad and a first 0691-9379TWF (Nl); AOC-02-17-TW; PHOELIP, ptd Page 17 1222761 VI. Patent Application Type The electrodes are electrically connected. 6. The light-emitting diode according to item 1 of the scope of the patent application, wherein the first type electrode of the crystal grain has a metal bump and is electrically connected to the electrical contact area of the first type electrode. 7. The light-emitting diode according to item 1 of the scope of patent application, wherein the substrate is a printed circuit substrate, a ceramic substrate, or a semiconductor substrate. 8. The light-emitting diode according to item 1 of the scope of patent application, wherein the substrate is a sapphire substrate or a spinel substrate. 9. The light-emitting diode according to item 1 in the scope of the patent application, wherein the light-emitting diode grains are epitaxially grown on a sapphire substrate and obtained from a gallium nitride series diode grain. 10. A method for manufacturing a light emitting diode, at least comprising: providing a die carrier, the die carrier having a solid crystal surface and a first type electrode contact area thereon; providing a substrate, A plurality of semiconductor layers are formed thereon, and the substrate and the plurality of semiconductor layers constitute a light emitting diode crystal; a patterned cover layer is formed and defined on the substrate side of the light emitting diode crystal, and A program removes a part of the substrate, so that the light-emitting diode die has a patterned substrate; forming a first-shaped electrode on the bottom of the plurality of semiconductor layers on the same side as the patterned substrate; forming a second shape The electrode is on the top of the plurality of semiconductor layers and is on a different side of the crystal grains than the first type electrode; the crystal grains are fixed to the crystal grain bearing with the patterned substrate side. 0691-9379TWF (N1); A0C-02-17-TW; PHOELIF.ptd page 181222761 VI. Patent application scope on the solid crystal surface, and the first type electrode of the crystal grain and the above crystal grain are carried The first type electrode contact area of the base is electrically connected; and the second type electrode of the diode crystal grains and the second type electrode electrical contact area are electrically connected by a wire. 11. The method for manufacturing a light-emitting diode according to item 10 of the scope of patent application, wherein the above-mentioned procedure for removing a part of the substrate includes an etching procedure. 1 2. The method for manufacturing a light emitting diode according to item 10 of the scope of the patent application, wherein the bottom of the plurality of semiconductor layers of the light emitting diode grains has a first surface, and the substrate and the plurality of semiconductor layers are on the first surface. The junction is a second surface, the first surface is in contact with the second surface, and the area of the first surface is larger than the area of the second surface, and the first type electrode system of the crystal grains is located On the first surface of the semiconductor film layer exposed after removing a part of the substrate. 1 3. The method for manufacturing a light-emitting diode according to item 10 of the scope of patent application, wherein the electrical contact region of the second-type electrode is formed on the above-mentioned crystal grain carrier. 1 4. The method for manufacturing a light emitting diode as described in item 10 of the scope of patent application, wherein the electrical contact area of the second type electrode is formed on a lead frame ° 1 5. As a patent application The method for manufacturing a light-emitting diode according to item 10 in the scope, wherein the first-type electrode electrical contact region has a bonding pad electrically connected to the first-type electrode of the crystal grain. 16. The method for manufacturing a light-emitting diode according to item 10 of the scope of patent application, wherein the first-type electrode of the crystal grain has a metal bump and the above-mentioned 0691 -9379TWF (N1); AOC-02-17-TW; PHOELIF. Pt'J Page 19 1222761 »6. Scope of patent application The electrical contact area of the first type electrode is electrically connected. 1 7. The method for manufacturing a light-emitting diode as described in the application for special m1 sacrifice to 10, wherein the above-mentioned Fu Zhao * f 1 J stone H map, number + conductor layer system is by the liquid phase stupid method ( LPE), vapor phase stupid crystal (VPE) or ancient metal organic vapor phase epitaxy (MOCVD). 18. A method for manufacturing a light emitting diode as described in Item 10 of the declared patent scope ', wherein the substrate is a printed circuit substrate, a ceramic substrate, or a semiconductor substrate. 19 · The method for manufacturing a light-emitting diode according to item No. 0 of the patent application scope, wherein the substrate is a sapphire substrate or a spinel substrate. 20. The method for manufacturing a light-emitting diode according to item 1 of the scope of the patent application, wherein the above-mentioned light-emitting diode is a nitride series I ^ crystal grain obtained by epitaxial growth on a sapphire substrate.