1221035 五、發明說明（l) 發明所屬之技術領域·· 本發明有關於一種發光二極體製作方法 一種新顆 '性具有特殊形狀的透光層並先 光二極體製造方法。 ，特 行將 別是有關於 晶粒分離的發 先前技術： 世界能 省能產 物。但 用也逐 地面燈 助照明 前的主 體的天 界的潮 我國的 角色， 的角色 明市場 發光二 白光或 將來的 源的短 品的開 隨著發 漸開展 /逃生 、主照 要應用 下，因 流，美 發光二 所以在 ’目前 5帶入 極體所 藍白光 個人數 缺，是 發，省 光二極 ，包括 燈/醫 明等。 。所以 其具有 曰等國 極體產 此一領 發光二 另外一 取代， 發光二 位助理 不爭的事實 電燈泡的問 體技術的進 :指示燈、 療設備光源 簡言之，也 下一世代的 輕巧、省電 ，皆以舉國 業，在世界 域的下世代 極體在白光 個境界。目 由早期的黃 極體，已將 (personal ，全球各 世，便是 步，白光 攜帶式手 、汽車儀 就是以背 照明市場 及壽命長 之力，投 市場上， 發展，台 市場的應 前手機的 、綠光發光 手機點綴 digital 國莫不積極投入 此一趨勢下的產 發光二極體的應 電筒、LCD背光板 錶及内裝燈、輔 光源與照明為當 ’將是發光二極 的優點，符合世 入開發的行列， 佔有舉足輕重的 灣也將扮演重要 用，已將小型照 背光源，已都被 二極體到現在的 的五彩繽紛。 assistant· PDA)1221035 V. Description of the invention (l) The technical field to which the invention belongs ... The present invention relates to a method for manufacturing a light-emitting diode, a new light-transmitting layer having a special shape, and a method for manufacturing a light-emitting diode. In particular, it is related to the prior art of grain separation: the world's energy-efficient products. However, the role of our country before the lighting of the subject ’s celestial sphere is also assisted by the ground light. The role of the market is to illuminate the white light or the short source of the future source. Stream, the United States and the United States and the United States to bring the number of blue and white light into the polar body in the current 5 lack of personal data, is the hair, saving light poles, including lamps / medical Ming. . Therefore, it has the advantages of waiting for the national body to produce this light-emitting two, another replacement, the fact that the two light-emitting assistants are indisputable, the advancement of the light bulb's body technology: indicator lights, light sources for therapeutic equipment. In short, the lightness of the next generation, Power saving is based on the national industry, and the next generation of polar bodies in the world is in the realm of white light. In the early years, the yellow polar body has already changed the pace (personal, all generations in the world, and the white light portable hand and car instrument are backed by the backlight market and long life. Mobile phones, green light-emitting mobile phones embellished with digital Guo Mo does not actively invest in the production of light-emitting diode-based flashlights, LCD backlight panels and built-in lamps, auxiliary light sources and lighting as the advantages of light-emitting diodes In line with the ranks of the world's entry into the development, the bay that holds a significant role will also play an important role, has been a small backlight, has been colorful by the diode to the present. Assistant · PDA)
1221035 五、發明說明（2) 乃至液晶顯示面板（TFT-LCD)的背光源，也都將成為發光二 極體的天下，輕薄省電，使其具有不可取代的地位。 就現階段而言，距離實際進入白光led照明時代，尚有一段 距離’若白光發光二極體要取代現階段照明市場，發光效 率^少要達到1〇〇 lm/w以上，這個目標也成為各國努力的 目標。因此，基於上述之所需，以及因應趨勢之需求，因 此本發明將提出一種發光二極體之製作流程，可以提高 光二極體的發光效率。 x 發明内容： 本發明 本發明 形狀的 一種發 上迷暫 I區塊 I ;在 極體上 i ;及 '黏合 副獨立 法 之目的係為提供一種新穎的半導體元件之製造方 之再一目的係為 透光層並先行將 光—極體的製造 時性基板上以物 ’於該獨立區塊 該薄膜上形成發 ，去除該暫時性 形成反射層於第 材質於反射層側 區塊的發光二極 &供有關於一種新穎性具有特殊 晶粒分離的發光二極體製造方法。 方法包含：選擇一暫時性基板，於 理或化學方式分割成彼此獨立夕單 上以磊晶技術成長一薄膜做為透 光二極體，形成第一電極於發光二 基板；形成第二電極於該薄膜表— 一或第二電極上。其中更包含 ，再選擇一永久性基板，將該1 I 體黏合於該永久基板上。 刀1221035 V. Description of the invention (2) Even the backlight source of the liquid crystal display panel (TFT-LCD) will also become the world of light-emitting diodes, which is thin and light and saves power, making it irreplaceable. As far as the current stage is concerned, there is still a long way to go before entering the era of white LED lighting. 'If white light-emitting diodes are to replace the current stage of the lighting market, the luminous efficiency must be at least 100lm / w. This goal has also become Goals of national efforts. Therefore, based on the above-mentioned needs and the needs of responding to the trend, the present invention will propose a manufacturing process for a light-emitting diode, which can improve the light-emitting efficiency of the light-emitting diode. x Summary of the Invention: The present invention has a shape of the present invention, a block I, a block I, an i on a polar body, and the purpose of the 'adhesion sub-independent method' is to provide a novel semiconductor device. It is a light-transmitting layer and firstly forms an object on the thin film of the independent block on the time-sensitive substrate of the manufacturing of the photo-polar body, and removes the light-emitting layer that temporarily forms the reflective layer on the reflective material side block. Pole & provides a novel method for manufacturing a light emitting diode with special grain separation. The method includes: selecting a temporary substrate, and dividing it into two parts independently by chemical or chemical means; growing a thin film as a light-transmitting diode by epitaxial technology on a single sheet; forming a first electrode on the light-emitting two substrate; forming a second electrode on The thin film meter — on one or the second electrode. It further includes, and a permanent substrate is selected, and the 1 I body is adhered to the permanent substrate. Knife
第6頁 1221035 五、發明說明（3) 其中上述之暫時性基板可以選自導體、半導體、絕緣體其 中之一或其組合。永久性基板可以選自導體、半導體、絕 緣體其中之一或其組合。其中上述分割獨立區塊方法之物 理方式可以用硬度較高之刀片劃開、鋸刀切開、雷射切割 或以機械方式劃分切割；化學方式可以用濕式蝕刻、乾式 I虫刻等。於該獨立區塊上成長一薄膜作為透光層的磊晶技 術可以選自化學沉積、物理沉積其中之一或其組合。上述 將發光二極體黏合於該永久基板上的物理方式可以用黏著 劑、壓力、融合、熱效應、凡得瓦力或採用化學方式。其 中上述黏合之黏著材料可以選自其中含有化合物、聚合物 、單種或多種金屬及其組合。將上述暫時性基板去除的方 式可以為物理研磨、機械切削、化學蝕刻、化學機械研磨 或以雷射照射該暫時性基板與該半導體元件之介面，將該 暫時性基板剝離。 實施方式： 本發明係揭露一種半導體光電元件的製造方法，其中光元 件可以為發光二極體、雷射二極體、太陽電池、光檢測器… 等；而電元件可以為單極性元件、雙極性元件、微波元件… 等。其主要之步驟包括：選擇一暫時基板2，將該暫時基板2 以物理方式（例如以刀片劃分、鋸刀切割或以雷射切割…等） 或化學方式（例如濕式蝕刻、乾式蝕刻…等）分離成彼此獨 立區塊。在上述分割後之獨立區塊，利用磊晶技術（化學沉Page 6 1221035 V. Description of the invention (3) The above-mentioned temporary substrate may be selected from one of a conductor, a semiconductor, an insulator, or a combination thereof. The permanent substrate may be selected from one of a conductor, a semiconductor, an insulator, or a combination thereof. The physical method of the above-mentioned method of dividing independent blocks can be cut with a relatively hard blade, saw blade, laser cutting, or mechanical cutting; chemical methods can be wet etching, dry I insect engraving, etc. The epitaxial technique for growing a thin film as a light transmitting layer on the independent block may be selected from one of chemical deposition, physical deposition, or a combination thereof. The physical method for bonding the light-emitting diode to the permanent substrate can be adhesive, pressure, fusion, thermal effect, van der Waals or chemical method. The above-mentioned adhered adhesive material may be selected from the group consisting of compounds, polymers, single or multiple metals, and combinations thereof. The method for removing the temporary substrate may be physical polishing, mechanical cutting, chemical etching, chemical mechanical polishing, or irradiating the interface between the temporary substrate and the semiconductor element with a laser, and peeling the temporary substrate. Embodiments: The present invention discloses a method for manufacturing a semiconductor optoelectronic element, wherein the light element may be a light emitting diode, a laser diode, a solar cell, a photodetector, etc .; and the electric element may be a unipolar element, a bipolar element, or the like. Polar components, microwave components ... etc. The main steps include: selecting a temporary substrate 2 and physically (for example, dividing by a blade, cutting with a saw blade, or cutting by laser, etc.) or chemically (such as wet etching, dry etching, etc.) ) Into separate blocks. In the separated blocks above, the epitaxial technology (chemical
1221035 五、發明說明（4) 積、物理沉積等）成長一可具有斜面的薄膜4做為透光層， 如圖一所示。上述暫時基板可為導體、半導體、絕緣體， 例如可以採用氧化鋁基板，膜層4可以採用G a N。 參閱圖二，於上述各獨立區塊之膜層4上形成發光二極體 單元6，鍍上第一電極8。隨後再鍍上反射層1 0及黏合材料1 2 > 將上述完成各膜層的發光二極體黏合於一永久性基板1 4， 如圖三所示。再將暫時性基板2移除，移除的方法包含但不 限於使用物理研磨、機械切削、化學蝕刻或雷射剝離等方法> 之後在暫時性基板移除後所曝露之膜層4表面鍍上第二電極1; 如圖四所示。最後切割該永久性基板1 4，以完成整個製程。 其中黏合永久性基板1 4係為選擇性步驟。假設上述膜層4之 厚度大於4 0微米，則可以不需要永久性基板1 4。可參閱圖五 製程步驟亦可更改為完成膜層4及發光二極體單元6後，鍍 上第一電極8。隨後將暫時性基板2移除，為防止暫時性基板2 被移除後，已分割的發光二極體四散，可於膜層8上黏貼一 膠膜1 8固定，再移除暫時性基板。於膜層4的表面鍍上第二 電極1 6及反射層1 0，如圖六所示。 本發明的主要優點如下： 1 .簡化發光二極體製造的製程，且增加製程的穩定度，因 此可提高元件製程之良率，並可以降低生產成本。 2.可根據不同需求選擇適合之永久性基板，並可經由此製 程加強並改善元件之特性，例如散熱性、導電性。另外可 調變薄膜4的厚度，來決定是否使用永久基板。1221035 V. Description of the invention (4) Product, physical deposition, etc.) Grow a thin film 4 that can have a bevel as a light-transmitting layer, as shown in Figure 1. The temporary substrate may be a conductor, a semiconductor, or an insulator. For example, an alumina substrate may be used, and the film layer 4 may be G a N. Referring to FIG. 2, a light emitting diode unit 6 is formed on the film layer 4 of each of the independent blocks, and a first electrode 8 is plated. Then, the reflective layer 10 and the adhesive material 1 2 are plated again. The light-emitting diodes having completed the above-mentioned film layers are adhered to a permanent substrate 14 as shown in FIG. 3. Then, the temporary substrate 2 is removed, and the removal method includes, but is not limited to, using physical grinding, mechanical cutting, chemical etching, or laser peeling, etc. > After that, the surface of the film layer 4 exposed after the temporary substrate is removed is plated Upper second electrode 1; as shown in Figure 4. Finally, the permanent substrate 14 is cut to complete the entire process. Bonding the permanent substrate 14 is an optional step. Assuming that the thickness of the film layer 4 is greater than 40 microns, the permanent substrate 14 may not be needed. Refer to Fig. 5. The process steps can also be changed to plate the first electrode 8 after the film layer 4 and the light-emitting diode unit 6 are completed. Subsequently, the temporary substrate 2 is removed. In order to prevent the divided light-emitting diodes from scattering after the temporary substrate 2 is removed, an adhesive film 18 can be fixed on the film layer 8 and then the temporary substrate can be removed. A second electrode 16 and a reflective layer 10 are plated on the surface of the film layer 4, as shown in FIG. The main advantages of the present invention are as follows: 1. Simplify the manufacturing process of the light-emitting diode, and increase the stability of the process. Therefore, the yield of the device process can be improved, and the production cost can be reduced. 2. A suitable permanent substrate can be selected according to different needs, and the characteristics of components such as heat dissipation and conductivity can be enhanced and improved through this process. In addition, the thickness of the film 4 can be adjusted to determine whether to use a permanent substrate.
第8頁 1221035 五、發明說明（5) 3.薄膜4可當作發光二極體的透光層，其厚度及斜角可以提 升發光二體的發光效率。 對熟悉此領域技藝者，本發明雖以一較佳實例闡明如上， 然其並非用以限定本發明精神。在不脫離本發明之精神與 範圍内所作之修改與類似的安排，均應包含在下述之申請 專利範圍内，這樣的範圍應該與覆蓋在所有修改與類似結 構的最寬廣的詮釋一致。因此，闡明如上的本發明一較佳 實例，可用來鑑別不脫離本發明之精神與範圍内所作之各 種改變。Page 8 1221035 V. Description of the invention (5) 3. The thin film 4 can be used as the light-transmitting layer of the light-emitting diode, and its thickness and bevel can improve the light-emitting efficiency of the light-emitting diode. For those skilled in the art, although the present invention is explained above with a preferred example, it is not intended to limit the spirit of the present invention. Modifications and similar arrangements made without departing from the spirit and scope of the present invention should be included in the scope of the patent application described below, and such scope should be consistent with the broadest interpretation covering all modifications and similar structures. Therefore, a preferred embodiment of the present invention, as explained above, can be used to identify various changes made without departing from the spirit and scope of the present invention.
1221035 圖式簡單說明 圖式簡單說明： 藉由以下詳細之描述結合所附圖示，將可輕易的了解上述 内容及此項發明之諸多優點，其中： 圖一為根據本發明於暫時性基板形成獨立區塊並形成一具 有斜面的薄膜之截面圖。 ：丨 圖二為根據本發明形成一發光二極體、電極、反射層及黏 合材料之截面圖。 圖三為根據本發明黏合於永久性基板之截面圖。 圖四為根據本發明移除暫時性基板並鍍上電極之截面圖。 圖五為根據本發明當具有斜面的薄膜厚度大於4 0微米，直 接鍍上電極之截面圖。 圖六為根據本發明以膠膜固定發光二極體單體，移除暫時 性基板之截面圖。 符號對照表： 暫時性基板2 具有斜面之薄膜4 發光二極體單體6 第一電極8 反射層1 0 黏合材料1 2 永久性基板1 4 第二電極1 61221035 Brief description of the drawings Brief description of the drawings: The above content and the many advantages of this invention can be easily understood through the following detailed description combined with the attached drawings, where: Figure 1 shows the formation of a temporary substrate according to the present invention. A cross-sectional view of a separate block and forming a film with a bevel. : 丨 Figure 2 is a cross-sectional view of a light emitting diode, an electrode, a reflective layer, and an adhesive material formed according to the present invention. FIG. 3 is a cross-sectional view of a permanent substrate according to the present invention. FIG. 4 is a cross-sectional view of removing a temporary substrate and plating an electrode according to the present invention. Fig. 5 is a cross-sectional view of an electrode directly plated when the thickness of the thin film with a bevel is greater than 40 m according to the present invention. FIG. 6 is a cross-sectional view of a light-emitting diode unit fixed with an adhesive film and a temporary substrate removed in accordance with the present invention. Symbol comparison table: Temporary substrate 2 Film with inclined surface 4 Light-emitting diode monomer 6 First electrode 8 Reflective layer 1 0 Adhesive material 1 2 Permanent substrate 1 4 Second electrode 1 6
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