TWI220799B - Light-emitting device with metal matrix composite material carrier - Google Patents
Light-emitting device with metal matrix composite material carrier Download PDFInfo
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- TWI220799B TWI220799B TW92120598A TW92120598A TWI220799B TW I220799 B TWI220799 B TW I220799B TW 92120598 A TW92120598 A TW 92120598A TW 92120598 A TW92120598 A TW 92120598A TW I220799 B TWI220799 B TW I220799B
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- 239000011156 metal matrix composite Substances 0.000 title claims abstract description 68
- 239000000463 material Substances 0.000 title claims abstract description 53
- 239000010410 layer Substances 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 239000012790 adhesive layer Substances 0.000 claims description 35
- 239000011159 matrix material Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000002905 metal composite material Substances 0.000 claims description 4
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 4
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000002322 conducting polymer Substances 0.000 claims 1
- 229920001940 conductive polymer Polymers 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 229910020658 PbSn Inorganic materials 0.000 description 2
- 101150071746 Pbsn gene Proteins 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Led Device Packages (AREA)
Abstract
Description
1220799 五、發明說明(1) 發明技術領域 .本發明係關於一種發光元件,尤其關於一種具有金 屬基質複合材料載體之發光元件。 發光元件之應用頗為廣泛,例如,可應用於光學顯 示裝置、雷射二極體、交通號誌、資料儲存裝置、通訊 裝置、照明裝置、以及醫療裝置。 先前技術 傳統之發光元件之材質主要為半導體,該種材質之 導熱特性不佳。當發光元件通電時,由於發光元件發 光,會因此而產生熱,由於發光元件為半導體材質,因 此導熱不佳,這些熱若無法適當的被移除,則發光元件 將會因受熱而降低發光效率,如A 1 G a I η P組成之材料,在 相同之電流條件操作下,當外界之溫度由2 0 °C升溫至 8 0 °C時,亮度將下降20%〜50%。前述之問題在小尺寸之發 光元件上,由於在低電流操作,電流小於3 0 m A〜5 0 m A,發 光產生之熱還勉強能由疊層導除,因此問題還不太明 顯;但是當發生在大尺寸之發光元件時,在高電流操 作,電流大於1 0 0 m A〜1 A,則該大尺寸發光元件所產生之 熱,將無法及時移除,則發光元件之溫度將上升,亮度 便明顯下降,使得發光元件之發光功率大大降低。 於美國專利第6 2 8 7 8 8 2號揭露一種發光二極體,其以1220799 V. Description of the Invention (1) Technical Field of the Invention The present invention relates to a light-emitting element, and particularly to a light-emitting element having a metal matrix composite carrier. The applications of light-emitting elements are quite wide, for example, they can be applied to optical display devices, laser diodes, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. Prior technology The material of traditional light-emitting elements is mainly semiconductors, which have poor thermal conductivity. When the light-emitting element is energized, heat is generated because the light-emitting element emits light. Because the light-emitting element is a semiconductor material, it does not conduct heat well. If this heat cannot be removed properly, the light-emitting element will reduce the light-emitting efficiency due to heat. For example, for materials composed of A 1 G a I η P, under the same current conditions, when the external temperature rises from 20 ° C to 80 ° C, the brightness will drop by 20% to 50%. The aforementioned problem is that on small-sized light-emitting elements, since the current is less than 30 m A to 50 m A at low current operation, the heat generated by light emission can be barely conducted by the stack, so the problem is not obvious; but When it occurs in a large-sized light-emitting element, and the current is greater than 100 m A ~ 1 A at high current operation, the heat generated by the large-sized light-emitting element cannot be removed in time, and the temperature of the light-emitting element will rise. , The brightness is significantly reduced, so that the luminous power of the light-emitting element is greatly reduced. A light emitting diode is disclosed in U.S. Patent No. 6 2 8 7 8 8 2
第5頁 1220799 五、發明說明(2) 金屬反射黏結劑黏結一發光疊層以及一金屬基板,使得 該發光二極體具有反射及導熱之功能。於中華民國專利 第1 5 1 4 1 0號揭露一種具有金屬基板的半導體元件,其利 用電鍍法將金屬材料鍍於半導體發光疊層上,形成一金 屬基板,以金屬基板取代傳統半導體基板,來達到導熱 的功能。但是在上述兩種結構中,由於金屬基板之熱膨 脹係數與半導體之發光疊層不同,兩者差異非常大,因 此在後段加工時,金屬基板與發光疊層之間因熱膨脹係 數差異之影響,使得兩者之間產生剝離,造成產品之信 賴度降低。 發明内容 於Kevin A. Moores等人發表之文獻中(Future Circuits International, Issue No. 7, pp. 45-49, 2001)提到一種金屬基質複合材料(Metal Matrix Composites, MMC)載體,其中該金屬基質複合材料載體 係於一具有孔洞之載體中充填入適合之金屬基質,使得 該金屬基質複合材料載體具有可調變之熱傳係數或熱膨 脹係數特徵。 本案發明人於思考如何解決前述之問題時,認為若 利用一金屬基質複合材料(Metal Matrix Composites, MMC)載體,使得該金屬基質複合材料載體之熱膨脹係數 接近一發光疊層之熱膨脹係數,再以一黏結層將該金屬 基質複合材料載體與該發光叠層結合在一起。如此,將Page 5 1220799 V. Description of the invention (2) A metal reflective adhesive bonds a light-emitting stack and a metal substrate, so that the light-emitting diode has the functions of reflection and heat conduction. In the Republic of China Patent No. 151410, a semiconductor element with a metal substrate is disclosed. A metal material is plated on a semiconductor light-emitting stack by electroplating to form a metal substrate. The metal substrate is used to replace the traditional semiconductor substrate. To achieve the function of heat conduction. However, in the above two structures, because the thermal expansion coefficient of the metal substrate is different from that of the semiconductor light-emitting stack, the difference between the two is very large. Therefore, during the subsequent processing, the difference in thermal expansion coefficient between the metal substrate and the light-emitting stack makes the There is peeling between the two, which reduces the reliability of the product. SUMMARY OF THE INVENTION In a document published by Kevin A. Moores et al. (Future Circuits International, Issue No. 7, pp. 45-49, 2001), a metal matrix composite (MMC) carrier is mentioned, in which the metal The matrix composite carrier is filled with a suitable metal matrix in a carrier having holes, so that the metal matrix composite carrier has a tunable heat transfer coefficient or thermal expansion coefficient characteristic. When thinking about how to solve the foregoing problems, the inventor of the present case thought that if a metal matrix composite (MMC) carrier was used to make the thermal expansion coefficient of the metal matrix composite carrier close to that of a light-emitting stack, then An adhesive layer combines the metal matrix composite carrier with the light-emitting laminate. So will
第6頁 1220799 五、發明說明(3) 可解決習知結構中金屬基板與發光疊層間產生剝離之問 題。另外由於該金屬基質複合材料載體内填充金屬基 質,使得該金屬基質複合材料載體亦具有高熱傳係數, 進而達到熱能散逸之功能。 本發明之主要目的在於提供一種具有金屬基質複合 材料載體之發光元件,利用一金屬基質複合材料載體, 使得該金屬基質複合材料載體之熱膨脹係數接近一發光 疊層之熱膨脹係數。如此,將可解決習知結構中金屬基 板與發光疊層間產生剝離之問題。 本發明之另一目的在於提供一種具有金屬基質複合 材料載體之發光元件,該金屬基質複合材料載體亦具有 高熱傳係數,如此,可解決發光元件中熱能無法即時移 除之問題。 依本發明一較佳實施例具有金屬基質複合材.料載體之發 光元件,包含一金屬基質複合材料載體,其中該金屬基 質複合材料載體係於一具有孔洞之載體中充填入一金屬 基質;以一黏結層將該金屬基質複合材料載體與一發光 叠層結合在一起。 前述之金屬基質複合材料載體係包含選自MMC(Metal Matrix Composites,金屬基質複合材料)及CMC(Page 6 1220799 V. Description of the invention (3) It can solve the problem of peeling between the metal substrate and the light-emitting stack in the conventional structure. In addition, because the metal matrix composite material carrier is filled with a metal matrix, the metal matrix composite material carrier also has a high heat transfer coefficient, thereby achieving the function of heat energy dissipation. The main object of the present invention is to provide a light emitting element having a metal matrix composite carrier. By using a metal matrix composite carrier, the thermal expansion coefficient of the metal matrix composite carrier is close to that of a light emitting stack. In this way, the problem of peeling between the metal substrate and the light emitting stack in the conventional structure can be solved. Another object of the present invention is to provide a light-emitting element having a metal matrix composite carrier. The metal matrix composite carrier also has a high heat transfer coefficient. In this way, the problem that the thermal energy in the light-emitting element cannot be removed immediately. According to a preferred embodiment of the present invention, a light-emitting element having a metal matrix composite material carrier includes a metal matrix composite carrier, wherein the metal matrix composite carrier is filled with a metal matrix in a carrier having holes; An adhesive layer combines the metal matrix composite carrier with a luminescent stack. The aforementioned metal matrix composite carrier is selected from the group consisting of MMC (Metal Matrix Composites) and CMC (
第7頁 1220799 五、發明說明(4)Page 7 1220799 V. Description of the invention (4)
Ceramic Metal Composites,陶瓷金屬複合材料)所構成 材料族群中之至少一種材料或其他可替代之材料。 實施方式 請參閱圖1 ,依本發明一較佳實施例1具有金屬基質 複合材料載體之發光元件1 ,包含一金屬基質複合材料載 體1 0,其中該金屬基質複合材料載體係於一具有孔洞之 載體中充填入適合之金屬基質,使得該金屬基質複合材 料載體之熱膨脹係數接近一發光疊層之熱膨脹係數;形 成於該金屬基質複合材料載體上之一金屬反射層1 1 ;形 成於該金屬反射層上之一透明黏結層1 2 ;形成於該透明 黏結層上之一透明導電層1 3,其中,該透明導電層之上 表面包含一第一表面區域與一第二表面區域;形成於該 第一表面區域上之一發光疊層14 ;形成於該第二表面區 域上之一第一接線電極1 5 ;以及形成於該發光疊層上之 一第二接線電極1 6。 上述之實施例1中,於該金屬反射層及該透明黏結層 之間可形成一第一反應層;於該透明黏結層及該透明導 電層之間可形成一第二反應層,以提高之間的附著力。 上述之實施例1中,該金屬反射層亦可形成於透明黏 結層與透明導電層之間。另外上述之實施例中該透明黏 結層亦可以不透明黏結層取代,同時該金屬反射層形成Ceramic Metal Composites (Ceramic Metal Composites), at least one of the material groups or other alternative materials. For an embodiment, please refer to FIG. 1. According to a preferred embodiment 1 of the present invention, a light-emitting element 1 having a metal matrix composite carrier includes a metal matrix composite carrier 10, wherein the metal matrix composite carrier is in a cavity having a hole. The carrier is filled with a suitable metal matrix, so that the thermal expansion coefficient of the metal matrix composite carrier is close to that of a light-emitting stack; a metal reflective layer 1 1 formed on the metal matrix composite carrier; and formed on the metal reflection A transparent adhesive layer 12 on the layer; a transparent conductive layer 13 formed on the transparent adhesive layer, wherein the upper surface of the transparent conductive layer includes a first surface region and a second surface region; A light emitting stack 14 on the first surface region; a first wiring electrode 15 formed on the second surface region; and a second wiring electrode 16 formed on the light emitting stack. In the above embodiment 1, a first reaction layer may be formed between the metal reflective layer and the transparent adhesive layer; a second reaction layer may be formed between the transparent adhesive layer and the transparent conductive layer to improve the Adhesion. In Embodiment 1 described above, the metal reflective layer may be formed between the transparent adhesive layer and the transparent conductive layer. In addition, in the above embodiment, the transparent adhesive layer may be replaced by an opaque adhesive layer, and at the same time, the metal reflective layer is formed.
第8頁 1220799 五、發明說明(5) 於不透明黏結層與透明導電層之間。 上述之實施例1中,於該金屬反射層及該導電透明黏 結層之間可形成一第一反應層;於該導電透明黏結層及 該透明導電層之間可形成一第二反應層,以提高之間的 附著力。 上述之實施例1中,該透明黏結層亦可以導電透明黏 結層取代。該金屬反射層亦可形成於導電透明黏結層與 透明導電層之間。另外上述之實施例中該導電透明黏結 層亦可以導電黏結層取代,同時該金屬反射層形成於導 電黏結層與透明導電層之間。 請參閱圖2,依本發明又一較佳實施例2具有金屬基質複 合材料載體之發光元件2,包含一金屬基質複合材料載體 2 0,其中該金屬基質複合材料載體係於一具有孔洞之載 體中充填入適合之金屬基質,使得該金屬基質複合材料 載體之熱膨脹係數接近一發光疊層之熱膨脹係數;形成 於該金屬基質複合材料載體上之一金屬黏結層2 1 ;形成 於該金屬黏結層上之一發光疊層2 2 ;以及形成於該發光 疊層上之一接線電極2 3。 前述之金屬基質複合材料載體係包含選自MMC( Metal Matrix Composites,金屬基質複合材料)及CMC( CeramicPage 8 1220799 V. Description of the invention (5) Between the opaque adhesive layer and the transparent conductive layer. In the above-mentioned Embodiment 1, a first reaction layer may be formed between the metal reflective layer and the conductive transparent adhesive layer; a second reaction layer may be formed between the conductive transparent adhesive layer and the transparent conductive layer, so that Improve adhesion between. In the above-mentioned Embodiment 1, the transparent adhesive layer may be replaced by a conductive transparent adhesive layer. The metal reflective layer may also be formed between the conductive transparent adhesive layer and the transparent conductive layer. In addition, in the foregoing embodiment, the conductive transparent adhesive layer may be replaced by a conductive adhesive layer, and the metal reflective layer is formed between the conductive adhesive layer and the transparent conductive layer. Please refer to FIG. 2. According to another preferred embodiment 2 of the present invention, a light-emitting element 2 having a metal matrix composite carrier includes a metal matrix composite carrier 20, wherein the metal matrix composite carrier is on a carrier having holes. A suitable metal matrix is filled in the metal matrix, so that the thermal expansion coefficient of the metal matrix composite carrier is close to that of a light-emitting stack; a metal bonding layer 2 1 formed on the metal matrix composite carrier; An upper light emitting stack 2 2; and a wiring electrode 23 formed on the light emitting stack. The aforementioned metal matrix composite carrier is selected from the group consisting of MMC (Metal Matrix Composites) and CMC (Ceramic
第9頁 1220799 五、發明說明(6)Page 9 1220799 V. Description of the invention (6)
Metal Composites,陶瓷金屬複合材料)所構成材料族群 中之至少一種材料或其他可替代之材料;前述發光疊層 係包含AlGalnP、A1 InGaN及AlGaAs系列所構成材料族^ 中之至少一種材料;前述透明黏結層係包含選自於聚醯 亞胺(PI)、苯并環丁烷(BCB)或過氟環丁烷(PFCB)所構成 材料組群中之至少一種材料;該導電透明黏結層包含選 自於自發性導電焉分子(Intrinsically conductingMetal Composites, at least one of the materials in the family of materials or other alternative materials; the aforementioned light-emitting stacks include at least one of the materials in the family of AlGalnP, A1 InGaN and AlGaAs series ^ The adhesive layer includes at least one material selected from the group consisting of polyimide (PI), benzocyclobutane (BCB), or perfluorocyclobutane (PFCB); the conductive transparent adhesive layer includes an optional 2. spontaneously conducting
polymer )或高分子中摻雜導電材質所構成材料組群中之 至少一種材料,其中,該導電材質包含選自於氧化銦 錫、氧化鎘錫、氧化銻錫、氧化鋅、氧化鋅錫、Au及 N i / A u所構成材料組群中之至少一種材料;前述第一反廣 層係包含選自於S i N X、T i或C r所構成材料組群中之至少w 一種材料;前述第二反應層係包含選自於S i N X、τ i咬i 所構成材料組群中之至少一種材料;前述金屬反射層^ 包含選自於 In、Sn、A1、Au、Pt、Zn、Ge、Ag、Ti 曰、、 Pb、-Pd、Cu、AuBe、AuGe、Ni、PbSn 或AiiZn 所構成材 組群中之至少一種材料;前述金屬黏結層係包含選自於’polymer) or at least one material in a polymer group doped with a conductive material, wherein the conductive material includes a material selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, zinc tin oxide, and Au And at least one material in the group of materials formed by N i / Au; the first anti-wide layer system includes at least one material selected from the group of materials formed by Si NX, Ti or C r; The second reaction layer includes at least one material selected from the group consisting of Si NX and τ i. The metal reflection layer ^ includes a material selected from In, Sn, Al, Au, Pt, Zn, and Ge. , Ag, Ti, Pb, -Pd, Cu, AuBe, AuGe, Ni, PbSn, or AiiZn; at least one of the material groups; the aforementioned metal bonding layer system is selected from the group consisting of
In 、Sn 、Α1 、Αυ 、Pt 、Ζη 、Ge 、Ag、Ti 、Pb 、Pd 、Cu;In, Sn, Α1, Αυ, Pt, Zη, Ge, Ag, Ti, Pb, Pd, Cu;
AuBe、AuGe、N i 、PbSn或AuZn所構成材料组群ψ U、 、 1 T〈至少 一種材料。 雖然本發明之發光元件已以較佳實施例揭露於上,然 發明之範圍並不限於上述較佳貫施例,應以下述申= 利範圍所界定為準。因此任何熟知此項技藝者,在$ =The material group ψ U,, 1 T <A, consisting of AuBe, AuGe, Ni, PbSn, or AuZn is at least one material. Although the light-emitting element of the present invention has been disclosed above with preferred embodiments, the scope of the invention is not limited to the above-mentioned preferred embodiments, but should be defined by the following claims. So anyone who knows the art well, at $ =
12207991220799
第11頁 1220799 圖式簡單說明 圖式之簡單說明: 圖1為一示意圖,顯示依本發明一較佳實施例之一種 具有金屬基質複合材料載體之發光元件。 圖2為一示意圖,顯示依本發明另一較佳實施例之一 種具有金屬基質複合材料載體之發光元件。Page 11 1220799 Brief description of the drawings Brief description of the drawings: Fig. 1 is a schematic diagram showing a light-emitting element having a metal matrix composite carrier according to a preferred embodiment of the present invention. Fig. 2 is a schematic view showing a light emitting device having a metal matrix composite carrier according to another preferred embodiment of the present invention.
符號說明 1 發 光 元 件 10 金 屬 基 質 複 合 材 料 載 體 11 金 屬 反 射 層 12 透 明 黏 結 層 13 透 明 導 電 層 14 發 光 疊 層 15 第 一 接 線 電 極 16 第 二 接 線 電 極 2 發 光 元 件 20 金 屬 基 質 複 合 材 料 載 體 21 金 屬 黏 結 層 22 發 光 疊 層 23 接 線 電 極 第12頁DESCRIPTION OF SYMBOLS 1 Light emitting element 10 Metal matrix composite carrier 11 Metal reflective layer 12 Transparent adhesive layer 13 Transparent conductive layer 14 Light emitting stack 15 First wiring electrode 16 Second wiring electrode 2 Light emitting element 20 Metal matrix composite carrier 21 Metal bonding layer 22 Light emitting stack 23 Wiring electrode 第 12 页
Claims (1)
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| TW92120598A TWI220799B (en) | 2003-07-25 | 2003-07-25 | Light-emitting device with metal matrix composite material carrier |
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| TW200505045A TW200505045A (en) | 2005-02-01 |
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