1299545 九、發明說明： 【發明所屬之技術領域】 本，明係關於一種切割晶粒黏著膜，尤指一種黏附於 導體晶圓背面之半導體用切割晶粒黏著膜，係有助於半 導體晶圓切割製程’並使切割後產生之半導體晶片附著基 扳上。 【先前技術】 在傳、、先的衣私中，一般係使用膏狀黏著劑將一半導體 晶片黏附於-黏片框架上，然而膏狀黏著劑因其厚度較難 ，容易導致黏著劑外流現象(bleeding phen〇men〇n)的發 。此外，由於膏狀黏著劑亦無法應用於半導體晶圓調平 (wafer leveling)之製程，所近年來 漸被業界所使用。 杨式0日歸者劑已逐 15 20 -般使㈣膜式w黏著劑之半導體製程絲將半導 :晶：貼附於：黏著膜，再貼附上—切割膠帶(di—e) Li進Γ半導體晶圓切割程序。近年來，業界已推出一 具切割及半導體晶片黏著兩種功能的切割晶粒黏著膜 DAF，—d1Cing die adhesive fnm)，以簡化上述傳統步驟程 声°目:所使用之㈣晶粒黏著膜大致上包含有一黏著 ^ ’係用以黏附於半導體晶圓之背面；以及一附著於勒著 作用則在半導體晶圓切割時防止切割產生 之+V體曰曰片飛濺而出並將半導體晶片固定於 曰曰 一使用切割晶粒黏著膜之晶圓切割製程係切切割 5 1299545 粒黏著膜貼附於一晶圓之背面， 曰 小。垃发各、 再將日日固切剎至所需的大 一 巧洗晶粒/晶粒黏著膜並加以乾燥後，再將每 一切割而出之晶粒挑起。 的特η:割晶粒黏著膜之黏著層需具有兩種近乎矛盾 一須在切割晶圓時將晶圓固定於切割膜上， ί著H 必須ΐ切割而出之晶粒容易剝落以自切割 低、\ λ其黏钱在沾㈣塵粉後，其黏性容易減 致：刀副而出之晶粒形成-薄且長形之毛邊(burr)，導 曰粒在後續導線焊接製程時容易成為不良品。 =人經過長期且„之研究，最於研發出本發明之 ^體用切割晶粒黏著臈，以解決上述先前技術的各種缺 夭0 【發明内容】 15 20 因：，本發明的目的係用於解決先前技術的種種缺 明之主要目的係在提供—種半導體用切割黏著 、’俾祕止切割後產生之晶粒飛出及毛邊現象之發生、 二=挑片ί問題的發生、保持半導體晶圓與黏著膜之 、"，使晶粒與基板間於黏晶時維持^之黏力、以 及保持晶粒黏著膜與晶圓之間的低剝離強度。 壯制：f成士述目❸，本發明係提供-種應用於半導體封 ;衣::丰導體用切割晶粒黏著臈，其包括-第-黏著 -黏著層之表面；以及:二：:黏著層，係附著於第 ^切割朕，係附著於第二黏著層之 6 1299545 表面。其中，於室溫下，第一黏著層之儲存模數（st〇rage modiiluS)(Tl)係低於第二黏著層之儲存模數（T2)，且前述 Τ2係；丨於5〇〜300 MPa ,另，第一黏著層之延展係數 (elongation)(El)係咼於第二黏著層之延展係數（μ)，於室 5溫下所測得之E2係介於5〇〜500 % ;又，第一黏著層之黏力 (tackiness f0rce)(Tal)係高於第二黏著層之黏力（Ta2)， 且於攝氏60度之環境下所測得之Ta2係介於3〇〜35〇gf ;以及 第一黏著層與晶圓之間的剝離強度（peel strength)(pi)係 高於第二黏著層與薄膜的剝離強度（p2)，而ρι係介於 10 30〜300 gf/cm 〇 【實施方式】 本發明之較佳實施例將對照相對應之圖示詳細地說明 如下。但是，在說明前應合先敘明，本說明書與本發明所 15主張^權利範圍中所提及之詞囊，應依照本發明技術層面 所A盍之含義與概念，以及發明人對於本發明原理之瞭解 所下的定義為準，而非僅限於一般或辭典上狹隘之譯釋。 =，以下所述之實施例僅係為了方便說明而舉例而已，本 ^明所主張之權利範圍自應以申請專利範圍所述之範圍為 2〇準而非僅限於以下之實施例，且在不脫離本發明之範疇 下/、他等效方法及諸多修飾變化皆可予以實施。 多#^發明之發明人已積極研發出一種半導體用切割晶粒 1著膜其可抑制毛邊的產生，亦不致造成於進行挑片時 發生晶圓與黏著層之間的介面剝落現象（interfacial peel 7 12995451299545 IX. Description of the invention: [Technical field of the invention] This is a method for cutting a die attach film, especially a semiconductor die-cut die attach film adhered to the back surface of a conductor wafer, which is useful for a semiconductor wafer. The cutting process 'brings the semiconductor wafer adhesion substrate generated after the cutting. [Prior Art] In the transmission and the first clothing, a semiconductor wafer is generally adhered to the adhesive sheet frame by a paste adhesive. However, the paste adhesive is difficult to cause the adhesive to flow out due to its thickness. (bleeding phen〇men〇n). In addition, since paste adhesives cannot be applied to wafer leveling processes, they have been used in the industry in recent years. Yang type 0 day return agent has been 15-20 - general (four) film type w adhesive semiconductor process wire will be semi-conductive: crystal: attached to: adhesive film, and then attached - cutting tape (di-e) Li Into the semiconductor wafer cutting process. In recent years, the industry has introduced a cutting die attach film DAF (D1Cing die adhesive fnm) with two functions of dicing and semiconductor wafer bonding to simplify the above-mentioned traditional steps: the use of (4) die attach film The upper surface includes an adhesive layer for adhering to the back surface of the semiconductor wafer; and an attached film for the purpose of preventing the dicing of the +V body sheet from being cut during the semiconductor wafer cutting and fixing the semiconductor wafer to the semiconductor wafer The wafer cutting process using a dicing die attach film cuts and cuts 5 1299545 adhesive film attached to the back side of a wafer, which is small. Each of the chips is lifted and the grain is cleaned to the desired size. The grain/die film is dried and the crystals are cut out. The special η: the adhesive layer of the die-adhesive film needs to have two kinds of contradictions. The wafer must be fixed on the dicing film when the wafer is diced, and the granules which must be cut out are easily peeled off for self-cutting. Low, \ λ, its sticky money after dip (four) dust powder, its viscosity is easy to reduce: the grain formed by the knife is formed - thin and long burr, the guide grain is easy in the subsequent wire bonding process Become a defective product. = After a long period of research, the human body has developed the dicing die bond of the present invention to solve various defects of the prior art described above. [Invention] 15 20 Because: The purpose of the present invention is The main purpose of solving the various shortcomings of the prior art is to provide the cutting adhesion of the semiconductor, the occurrence of the grain flying out and the burr phenomenon after the cutting, the occurrence of the problem, and the maintenance of the semiconductor crystal. The circular and adhesive film, maintains the adhesion between the die and the substrate during the bonding, and maintains the low peel strength between the die attach film and the wafer. The invention provides a method for applying to a semiconductor package; a clothing: a conductive die-cutting die attaching ruthenium comprising a surface of a -adhesive-adhesive layer; and: a second:: an adhesive layer attached to the second cutting朕, is attached to the surface of the second adhesive layer 6 1299545. wherein, at room temperature, the storage modulus of the first adhesive layer (T〇rage modiiluS) (Tl) is lower than the storage modulus of the second adhesive layer ( T2), and the aforementioned Τ2 series; 丨5〇~300 MPa, another, The elongation coefficient (El) of an adhesive layer is the elongation coefficient (μ) of the second adhesive layer, and the E2 system measured at room temperature 5 is between 5 〇 and 500%; The tackiness f0rce (Tal) is higher than the adhesion of the second adhesive layer (Ta2), and the Ta2 system measured at 60 degrees Celsius is between 3〇35〇gf; The peel strength (pi) between an adhesive layer and a wafer is higher than the peel strength (p2) of the second adhesive layer and the film, and the ρι is between 10 30 and 300 gf/cm. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, however, the description of the present invention and the scope of the claims of the present invention, The definitions and concepts of the technical aspects of the present invention, as well as the inventors' definition of the principles of the present invention, shall not be limited to the general or dictionary narrow interpretations. The examples are only for convenience of explanation, and the scope of rights claimed by the present invention is from the scope of patent application. The scope of the invention is not limited to the following examples, and can be implemented without departing from the scope of the invention, his equivalent method and many modifications. The inventor of the invention has been actively developed. A semiconductor cutting die 1 can be used to suppress the generation of burrs, and does not cause interface peeling between the wafer and the adhesive layer during picking (interfacial peel 7 1299545)
PhenomenGn)。因此，本發明係藉由控制半導體用㈣日日日粒 勸著膜之第-黏著層及第：黏著層所分別具備之儲存模 數、黏力、延展係數以及剝離強度所製備而成，其中本發 明之半導體用切割晶粒黏著膜係包含_第一黏著層，其‘ 附著於-晶圓之背面；-第二黏著層，其係、附著於第二黏 著層之表面；以及一切割膜，其係附著於該 表面。 圖1係本發明之半導體用切割晶粒黏著膜 干乂 Ί王員 施例的剖視圖 明麥閱圖1，其中本較佳實施例之切割晶粒黏著膜⑺〇 具有一層狀結構，其係包含一基膜（base fllm)n〇、一第一 黏著層12〇係接合於基膜110之表面、—第二黏著層13〇係接 合於第-黏著層、以及一切割膜140係接合於第芦 130 〇 曰 15 &膜11G係用以維持本較佳實施例之切割晶粒黏著膜 100之基本外型’其較佳係由下列所示之組君，中至少一成份 所製成·聚對苯二甲酸乙二醇酉旨（PET)以及聚乙稀蔡二 羧酸鹽（PEN))，但不僅限於此。 丁 本較佳實施例之切割晶粒黏著膜100之第一黏著層120 2〇係為：於半導體封裝製程中與晶圓之背面接合之材料層 (mate^al layer)，其對於半導體晶片（即晶圓經切割後而產 生之部分）須具備有較高之黏力。而本較佳實施例之半導體 用切割黏著膜100之第二黏著層130係為一結合於切割^ 140之材料層，且相較於第一黏著層12〇與晶粒之間的黏 1299545 力’第二黏著層130與 至於切㈣H0,幻卜 鬆備的黏力較低。 以固定i去乂:切割晶圓時，暫時黏合於晶圓上用 二Ϊ 之部份，其係一種包含塗佈如丙稀經 或聚稀烴膜。 纟寺搞材枓之黏著層的聚氯乙烯 切割結I:了 Ϊ產生之晶粒產生毛邊現象的機率且移除 的儲；r*: Γ之曰曰粒’本發明之半導體用切割晶粒黏著膜 木-子禺、延展係數等物質特性均應加以控制。因為， ;轉明之半導體用切割晶粒黏著膜的儲存模數較高時， 1,? !膜之切割屬;反之，若本發明之半導體用切 口1 B心黏著膜的儲存模數較低時，則可能導致 刀具之切割而被同步拉長，使得切割後產生之晶粒產生： 邊的機率增加。但是，當本發明之半導體用切割晶粒黏著 版的儲存模數過高時，相對地會造成黏著膜之黏力下降， 導致黏著介面發生剝落現象，而此剝落現象亦會提高切割 =產生之晶粒產生毛邊的機率。此外，當提高本發明之半 導體用切割晶粒黏著膜的延展係數時，黏著膜之延展屬性 ^會超越並抑制其本身的切割屬性，亦會使切割後產生之 晶粒產生毛邊的機率大增。 20 本發明之半導體用切割晶粒黏著膜藉由將其第一黏著 層之導電模數（則加丨似〇f electricity)及張力 strength)控制在一較低的範圍，進而改善其第一黏著層與 晶圓之間的黏著力，且藉由將其第二黏著層之導電模數控 制在一較高的範圍並將其第二黏著層之延展係數控制在一 9 1299545 ‘黏著層改善本發明之半導體用切 較低的範圍，使得其第 割晶粒黏著膜之硬度。 本發明之半導體用切割晶粒黏著膜之 耗數（T1)應低於第二黏著層之儲存模數⑽，而辦= ηΛ 料㈣切—減界值時，财進行晶圓 真刀柄會因為切割晶粒黏著膜之硬度減低而產生大量的毛 二巨是’當第二黏著層之儲存模數超出-高臨界值時， =時會因為溢流現象的產生，而影響到後續之打線 坪接1私（Wlre bonding)的品質。 同時，本發明之半導體用切割晶粒黏著膜之 層的延展係數（E1)應維持高 ' 竹q於弟一黏者層之延展係數 :/二在室溫的環境下所測得之E2值較佳係介於50〜500 15 20 二/係為保持—半導㈣切割晶粒黏著膜硬度的-必要 條件。 又 ㈤ ==半導體用切割晶粒黏著膜之第-黏著 ::弟一黏者層均應具備最適宜的黏著度，以改善挑片製 私牯的良率。當介於本發明 曰ile 之+泠體用切割晶粒黏著膜與 ^之:的緊进黏度獲得改善’且其第一黏著層之黏力增 加日守，本發明之半導，用 飛片現象的情況發生Γ:；、立々占者膜便可防止切割時 備較高之黏力時，在貼二二因此、’當第-黏著層具 攝氏60度的環境下作業，避^造成氣泡，且應於 §弟一黏著層之黏力小於第一 10 1299545 .黏著層之勒力時，第二黏著 離。為了達到上^ 合易與丰導體晶圓分 應保持高於第二//第―”層與晶粒間的黏力叫） 氏6〇度的#下^日肋•之間_力（加），且於攝 又的墩丨兄下所測得之第二黏 (Ta2)值較佳係介於3G〜35Qg卜“刀相之間的黏力 膜的中，當本發明之半導體用切割黏著 之間不能♦生時分離時’晶粒與第一黏著層 割晶粒黏i膜::第=!象。因此，本發明之半導體用切 10 15 保持言於第 '卖、"者層與晶圓之間的剝離強度（P1)應 發明：半ί二與切割膜之間的剝離強度㈣，且於本 =〇 晶粒黏著膜的切割膜中，P1係較佳介 於 30〜3〇〇gf/em。 同%纟發明之半導體用切割晶粒黏著膜的第一黏著 二20及第二黏著層130之成分較佳分別包含有-固狀環氧 树月曰…液狀環氧樹脂、—橡膠樹脂以及—填充料。 —而a為了使本發明之半導體用切割晶粒黏著膜的第-黏 者層及第二黏著層得以具有適宜之儲存模數、黏力、延展 係數以及介面剝離強度等物質特性，本發明 、 割晶粒黏著膜的第-黏著層較佳由―第—組成物製_ 成旦此第-組成物包含有一第一基質樹脂組成物，其係由 重量百分比30〜50 %之固狀環氧樹脂、重量百分比2〇〜4〇% 之液狀環氧樹脂及50〜1G%之橡膠樹脂所組成；以及以第— 基質樹脂組成物總重量為基準之Μ重量份的填充料所製 成。另-方面，本發明之半導體用切割晶粒黏著膜的第二 1299545 黏著層較佳由一第二成份製備而成，此第二組成物包含有 一第一基質樹脂成物，其係由重量百分比35〜55 %之固狀環 氧樹脂、15〜35 %之液狀環氧樹脂及50〜1() %之橡膠樹脂； 以及以第二基質樹脂組成物總重量為基準之之丨〜3〇重量份 5 的填充料所製成。PhenomenGn). Therefore, the present invention is prepared by controlling the storage modulus, the adhesive force, the elongation coefficient and the peeling strength of the first adhesive layer and the first adhesive layer of the film by controlling the semiconductor (4). The dicing die attach film for semiconductor of the present invention comprises a first adhesive layer attached to the back side of the wafer, a second adhesive layer attached to the surface of the second adhesive layer, and a dicing film It is attached to the surface. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the embodiment of a dicing die attaching film for semiconductors of the present invention, wherein the dicing die attaching film (7) of the preferred embodiment has a layered structure. A base fllm is included, a first adhesive layer 12 is bonded to the surface of the base film 110, a second adhesive layer 13 is bonded to the first adhesive layer, and a slit film 140 is bonded to the base film The ruthenium 130 amp 15 & film 11G is used to maintain the basic shape of the diced die attach film 100 of the preferred embodiment, which is preferably made of at least one component of the group shown below. • Polyethylene terephthalate (PET) and polyethylene dicarboxylate (PEN), but are not limited thereto. The first adhesive layer 120 of the dicing die attach film 100 of the preferred embodiment of the present invention is a mate layer bonded to the back surface of the wafer in a semiconductor package process for a semiconductor wafer ( That is, the part of the wafer that has been cut and produced must have a high viscosity. The second adhesive layer 130 of the dicing adhesive film 100 for a semiconductor of the preferred embodiment is a material layer bonded to the dicing layer 140, and the adhesion between the dies and the dies of the first adhesive layer 12 is 1299545. The second adhesive layer 130 has a lower adhesive force than the cut (four) H0. To fix the i: When the wafer is diced, it is temporarily bonded to the wafer with a portion of the ruthenium, which is coated with a coating such as a propylene or a polyolefin film. The PVC cutting junction of the adhesive layer of the 纟 搞 : : : : : : : : : : : : : : : : : : : : : : : : : : 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚The properties of the adhesive film, wood, and the coefficient of elongation should be controlled. Because, when the storage modulus of the diced die-adhesive film for semiconductors is high, the dicing of the film is genus; on the contrary, if the storage modulus of the sandwich 1 B of the semiconductor for the present invention is low, , it may cause the cutting of the tool to be synchronously elongated, so that the grain generated after the cutting is generated: the probability of the edge increases. However, when the storage modulus of the dicing die attaching plate for a semiconductor of the present invention is too high, the adhesive force of the adhesive film is relatively lowered, which causes peeling of the adhesive interface, and the peeling phenomenon also increases the cutting=production. The chance of the grain producing burrs. In addition, when the elongation coefficient of the dicing die attach film for a semiconductor of the present invention is increased, the ductility of the adhesive film exceeds and suppresses its own cutting property, and the probability of burrs generated by the dicing after the dicing is greatly increased. . The dicing die attach film for semiconductor of the present invention is controlled to a lower range by controlling the conductive modulus (and tens of electricity) of the first adhesive layer, thereby improving the first adhesion. The adhesion between the layer and the wafer, and by controlling the conductive modulus of the second adhesive layer to a higher range and controlling the elongation coefficient of the second adhesive layer to a 9 1299545 'adhesive layer improvement The semiconductor of the invention cuts the lower range such that the hardness of the etched die adhesion film. The consumption (T1) of the dicing die attach film for semiconductors of the present invention should be lower than the storage modulus of the second adhesive layer (10), and when the η Λ ( 四 四 四 四 减 减 减 减 减Because the hardness of the die-adhesive film is reduced, a large amount of hair is generated. When the storage modulus of the second adhesive layer exceeds the -high threshold, the phenomenon of overflow will occur due to the overflow phenomenon, which will affect the subsequent wire bonding. The quality of the Wlre bonding. Meanwhile, the elongation coefficient (E1) of the layer of the die-cutting film for semiconductors of the present invention should be kept high. The elongation coefficient of the bamboo layer is: /2 The E2 value measured at room temperature. Preferably, the system is between 50 and 500 15 20 2 / is necessary to maintain - semi-conductive (four) cutting die bond film hardness. (5) == The first-adhesive of the die-cutting die attaching film for semiconductors should have the most suitable adhesion to improve the yield of the private film. When the adhesion of the dicing die adhesion film of the present invention is improved, and the adhesion of the first adhesive layer is increased, the semi-guide of the present invention, the flying film The phenomenon of the phenomenon occurs:;, the film can prevent the high viscosity when cutting, in the second and second, therefore, when the first-adhesive layer has an environment of 60 degrees Celsius, avoiding Bubbles, and should be the viscosity of the adhesive layer of the § brother is less than the first 10 1299545. The adhesion of the adhesive layer, the second adhesion. In order to achieve the upper and lower conductors, the wafer should be kept higher than the adhesion between the second layer and the second layer, and the adhesion between the grains is called 6 〇 日 之间 之间 之间 之间 加), and the second viscosity (Ta2) value measured under the photo of the 丨 丨 较佳 is preferably between 3G 〜 35Qg 卜 "the viscous film between the knives, when the semiconductor of the present invention is used for cutting Between the adhesions can not be ♦ when the separation occurs when the 'grain and the first adhesive layer cut the grain adhesion film:: ==! Therefore, the semiconductor 1010 of the present invention maintains that the peel strength (P1) between the layer and the wafer should be invented: the peel strength between the film and the dicing film (4), and In the dicing film of the present invention, the P1 system is preferably between 30 and 3 〇〇gf/em. The components of the first adhesive 20 and the second adhesive layer 130 of the semiconductor die-cut die attach film of the invention are preferably composed of a solid-state epoxy resin, a liquid epoxy resin, a rubber resin, and the like. - Filler. - a, in order to make the first-adhesive layer and the second adhesive layer of the dicing die-adhesive film for semiconductor of the present invention have suitable storage characteristics such as storage modulus, viscosity, elongation coefficient and interfacial peel strength, the present invention, The first adhesive layer of the die-adhesive film is preferably made of a "first composition". The first composition comprises a first matrix resin composition, which is composed of a solid epoxy of 30 to 50% by weight. A resin, a liquid epoxy resin having a weight percentage of 2 〇 to 4% by weight, and a rubber resin of 50 to 1% by weight; and a filler of Μ by weight based on the total weight of the first matrix resin composition. In another aspect, the second 1299545 adhesive layer of the dicing die attach film for semiconductor of the present invention is preferably prepared from a second component, the second composition comprising a first matrix resin composition by weight percentage 35 to 55 % solid epoxy resin, 15 to 35% liquid epoxy resin and 50 to 1% rubber resin; and 丨~3〇 based on the total weight of the second matrix resin composition Made up of 5 parts by weight of filler.
此外’具有10,000〜50,000當量之雙酚苯氧基樹脂 (b1Sphen〇l-A phenoxy resin)、具有 10,0〇〇 〜5〇,〇⑽當量之雙 紛 F-苯氧基樹脂（bisphen〇1-F phen〇xy resin)、具有 I 400〜6,000當量之雙酚A_固狀環氧樹脂（bisphen〇i_A 10 邛0巧Rsin)或具有400〜6,000當量之雙酚固狀環氧樹脂 (bisphenol-F solid epoxy resin)可分別單獨或以其組合作為 固狀環氧樹脂，但不僅限於此。 另外，雙酚A-液狀環氧樹脂（bisphenoij nquid ep〇xy resin)、雙 _ F-液狀環氧樹脂（biSphen〇i_F UqUid 15 ^8-)、至少具有三種官能性之多官能之液狀環氧樹脂、經 橡膠改貝之液狀環氧樹脂（rubber-m〇dified Hquid π。” 丨 min)、經胺基甲酸酯改質之液狀環氧樹脂 (urethane-modified liquid epoxy resin)、經丙烯酸改質之液 ，環氧樹脂（aCryl-modified nquid ep〇xy resin)或感光液狀 20 環氧树月日（Photosensitive liquid epoxy resin)等等可作為液 狀環氧樹脂，並且可單獨或以組合作為固狀環氧樹脂 <，但 不僅限於此。 再者，含有重量百分比15〜40%丙烯腈及於攝氏1〇〇度 的環境下具有Mooney黏度20〜8〇之NBR(丁二烯-丙烯腈橡 12 1299545 膠）；含有重量百分比1 5〜40 %丙烯腈及於攝氏1 〇〇度時具有 Mooney黏度20〜80之HNBR(氫化丁二烯-丙烯腈橡膠）；含有 重量百分比10〜30 %SBR(苯乙烯-丁二烯橡膠）；含有重量百 分比10〜60 %SBS(聚苯乙烯-共-丁二烯-共-苯乙烯）；含有 重量百分比10〜60 %SEBS(氫化聚苯乙烯-共—丁二烯—共—苯 乙烯）等等，可單獨或以其組合作為橡膠樹脂，但不僅限於 此0 另外，填充料可增強黏著層之内部強度（一種内部張 ^ 力）、改善黏著層之切割特性以及減低其黏力，藉以改盖整 10 體晶圓切割製程。氧化石夕、石墨、叙、碳黑等可單獨戍以 它們的組合構成前述之填充料，但不僅限於此。此外，當 填充料之成分佔黏著層之總成分的比例過低時，黏著層之 硬度與黏力將十分難以控制，然而當填充料之成分佔黏著 層之總成分的比例過高時，則黏著層並無法有效地吸收及 15 承受壓力。 再者’在本發明之半導體用切割晶粒黏著膜中所使用 φ 之黏膠的成分更可在本發明所欲主張之範圍内，且不影響 本發明之效果下，更包含有適量之添加物，例如環氧固化 劑（epoxy curing agent)、紫外光固化劑（Uv cuHng 吨加）、 20偶聯劑（couPlin§ a§ent)、紫外光固化配方（uv curing formulation)等添加物，但不僅限於此。 意即，用以製備第一黏著層之第一組成物或用以製備 第二黏著層之第二組成物較佳更分別包含依第一組成物或 第二組成物之總重量為基準之卜如重量份的環氧固化劑， 13 1299545 ‘其中該環氧固化劑至少一種材料選自由胺類化合物、有機 酸以及酐所組成之群組。 此外，用以製備第一黏著層之第一組成物或用以製備 第二黏著層之第二組成物較佳更包含依第一組成物或第二 5 組成物之總重量為基準之0·1〜1 〇重量份的紫外光固化劑， 其中該紫外光固化劑至少一材料選自由^羥基己基苯基酮 (1-hydroxy hexyl phenyl ketone)、2羥基-2-甲基小苯基丙 烷小醇（2-hydr〇xy-2-methyl小phenyl propan小on)、4_(2-經基乙基）苯基-(2-羥基_2-甲基丙基）酮 10 (4-(2.hydroxyethyl)phenyl.(2.hydroxy-2.methylpropyl)keto ne)、磷酸酯氧化物（ph〇sphate oxide)、環戊二烯基苯基鐵 六氟磷酸 S 旨（cyclopentadienyl phenyl iron hexafluorophosphate)、二苯酮（diphenylketone)、雙-(2,6- 二甲氧基苯甲醯基）-t- 丁基-2-曱基乙基膦氧化物 15 (bis-(256-dimethoxybenzoyl).t-butyl.2-methylethylphosphin eoxide)及雙（2,4,6-三甲氧基苯曱醯基）苯基膦氧化物 (bis(2,4,6-tdmethoxybenzoyl)phenylphosphineoxide)所組成 之群組。 另外’用以製備弟一黏著層之第一組成物或用以製備 20 第二黏著層之第二組成物較佳更分別包含以第一組成物或 第二組成物之總重量為基準之〇1〜2〇重量份的偶聯劑，其 中該偶聯劑係選自由由矽烷（silane)偶聯劑、鋁偶聯劑、鈦 偶聯劑等等所組成之群組，但不僅限於此。上述之偶聯劑 係作為一種可將鬆散狀之填充料與流動狀之樹脂兩者結合 14 1299545 的靖，並其亦可作為用以增加對於半導體晶片及基 板等黏著對象之黏著力的促進劑。 本發明之半導體用切割晶粒黏著膜可先以一連續式余 佈機，例如風刀式塗佈機、c〇_塗佈機*塗佈機、g_= 5 :佈機’分別將第-黏著層及第二黏著層塗佈成一膠膜 y再以熱麼處5里的方式於高溫（攝氏6〇〜⑽度）的環境下將 _著層（第一黏著層及第二黏著層）相互虔合，最後再將切 告㈣合於第二黏著層±的方式製備，惟本發明之半導體 費用切割晶粒黏著膜的製備方式並不僅限於此。 10 本發明之半導體用切割晶粒黏著膜係用於如自圖2至 圖8所示之程序的半導體晶片製程中。除了半導體晶片之製 ί卜有關本發明之半導體用切割晶粒黏著膜的部分將詳 細描述說明於下： 首先，圖2係顯不一半導體晶圓丨。如圖3所示，一切割 15晶粒黏著膜100係壓附於半導體晶圓1之背面，而一原本貼 附於切剎Μ粒黏著膜丨〇〇之上表面的保護膜丨1 〇則在進行壓 丨合處理之前先行移除。 如圖4所示，一半導體晶圓切割程序係先利用一刀具2 將半導體晶圓1切割為預設之晶片尺寸，接著再進行清洗及 20 2燥等處理。而在進行切割程序時，半導體晶圓1與第一黏 著層皆完全被切斷，而切割膜14〇則僅部分地被切割至一特 定深度。 、如圖5所示，一挑片裝置3係用以挑起上述之切割後的 晶粒4。此時，除了切割膜14〇之外，第一黏著層與第二黏 15 1299545 著層仍黏附於晶粒4上’以使得挑片程序得以順利進行。亦 一由於本發明之第一黏著層12G與晶粒4之間的黏力大於 弟一黏著層130與切割膜140之間的黏力，所以切割膜14〇可 在進订挑片程序時有效地自第二黏著層分離。 —成挑片耘序之後，一半導體晶片打線焊接程序將 5進订:如圖6所示，半導體晶片打線悍接程序係將晶片 黏附於—導線架（Ieadframe)或-基板5上，例如-印刷電路 板或y軟性電路板（tape wke b_d)，接著再進行—固化處 理，以增強晶粒與基板之間的黏著力。 圖7所示，此g守半導體晶片與基板係一 :::::模Γ所示，最後再將接合後之半導= 心 _(ep°xymGlding)相個半導體封裝 15 20 詳細了解本發明之技術特徵，相關之較佳實施例將 、，下准所揭露較佳實施例僅係為便於說明舉 r内#用以限疋本發明，故在不棒離本發明之精神及 =内’任何為熟f本項技#者所知悉之其他各種等效手 ’又之修飾方法皆可實施。 比較例 每一黏著層係依照下述表i中所列 塗佈機製備而成，接著再以赦％β 工乂風刀式 一 丹乂熱壓合處理方式於摄庆QO许认 咼溫環境下將兩黏著層相 ... 又勺 黏附。取後，再以熱壓合處理 16 1299545 方式將壓合後的黏著層與切割膜相互黏合，製作完成一切 割晶粒黏著膜。 固狀環氧樹脂 (重量百分比） 較佳實施例1 較佳實施例2 比較例1 比較例2 f者層 黏著層 黏著層 黏著層 第一 40 第二 第一 第二 第一 第一 第二— 44 40 40 30 36 25 30 /夜狀％虱樹脂 Αίϋ分比） X&f 0¾¾ L-l-l rtL- 25 26 25 32 42 36 28 24 橡膠樹脂 (重量百分比） 氧偶聯劑 (Phr) ~~[Z—--—. 29 24 29 22 22 22 41 40 4 4 4 5 4 4 4 4 务外光偶gyp劑 (phr) 6 6 6 6 6 6 6 6 紫外光固化配 百分比） 6 ------ 6 6 6 6 6 6 6 填充料 (phr) -----—--- 1m rj04t ^τΛ ι 6 12 6 10 7 6 7 6 偶聯劑 (Phr) 1 1 1 1 1 1 1 1 表1中，固狀環氧樹脂係為BPA型-環氧樹酯（固體狀）， 液狀環氧樹脂係為BPA型-環氧樹酯（液體狀），橡膠樹酯係 為NBR，裱氧偶聯劑係為胺固化劑，紫外光固化配方係為 二丙烯酸酯，填充料係為二氧化矽，而偶聯劑則為矽烷偶 聯劑。 實施例及比較例中將會分別測量出每一切割晶粒黏著 膜之儲存模數、黏力、延展度以及介面剝離強度如下，其 17 1299545 測量結果詳列於表2中。 儲存模數 儲存模數（storage modulus)係藉由_Further, 'B1Sphen〇l A phenoxy resin having 10,000 to 50,000 equivalents, having 10,0 〇〇 5 〇, 〇 (10) equivalents of bis-F-phenoxy resin (bisphen〇1-F) Phen〇xy resin), bisphenol A_solid epoxy resin (bisphen〇i_A 10 R 0 R Rsin) having 400 to 6,000 equivalents or bisphenol-F having 400 to 6,000 equivalents of bisphenol-based epoxy resin The solid epoxy resin may be used alone or in combination as a solid epoxy resin, but is not limited thereto. In addition, bisphenol A-liquid epoxy resin (bisphenoij nquid ep〇xy resin), bis-F-liquid epoxy resin (biSphen〇i_F UqUid 15 ^8-), polyfunctional liquid having at least three functionalities Urethane-modified liquid epoxy resin ), acryl-modified nquid ep〇xy resin or photo-sensitive liquid epoxy resin, etc. can be used as liquid epoxy resin, and Separately or in combination as a solid epoxy resin, but not limited thereto. Further, it contains 15 to 40% by weight of acrylonitrile and has a Mooney viscosity of 20 to 8 Å in an environment of 1 degree Celsius (NBR) Butadiene-acrylonitrile rubber 12 1299545 gum; HNBR (hydrogenated butadiene-acrylonitrile rubber) containing 15% to 40% by weight of acrylonitrile and Mooney viscosity of 20 to 80 at 1 degree Celsius; Weight percent 10~30% SBR (styrene-butadiene rubber); Weight percentage 10~60% SBS (polystyrene-co-butadiene-co-styrene); containing 10~60% by weight of SEBS (hydrogenated polystyrene-co-butadiene-co-styrene) Alternatively, it may be used alone or in combination as a rubber resin, but it is not limited to this. In addition, the filler can enhance the internal strength of the adhesive layer (an internal tensile force), improve the cutting characteristics of the adhesive layer, and reduce the viscosity thereof. Covering the whole 10 wafer wafer cutting process. Oxide oxide, graphite, ruthenium, carbon black, etc. can be combined with each other to form the above-mentioned filler, but not limited thereto. In addition, when the filler component occupies the total of the adhesive layer When the proportion of the composition is too low, the hardness and adhesion of the adhesive layer will be very difficult to control. However, when the proportion of the filler component to the total composition of the adhesive layer is too high, the adhesive layer cannot be effectively absorbed and 15 is subjected to pressure. Further, the composition of the adhesive of φ used in the dicing die attach film for semiconductors of the present invention can be further within the scope of the present invention and does not affect the effects of the present invention, and includes an appropriate amount of addition. For example, an epoxy curing agent, an ultraviolet curing agent (Uv cuHng ton plus), a 20 coupling agent (couPlin§ a§ent), an ultraviolet curing formulation (uv curing formulation), and the like, but not only Limited to this. That is, the first composition for preparing the first adhesive layer or the second composition for preparing the second adhesive layer preferably further comprises, respectively, based on the total weight of the first composition or the second composition. For example, by weight of the epoxy curing agent, 13 1299545 'wherein the epoxy curing agent at least one material is selected from the group consisting of amine compounds, organic acids and anhydrides. In addition, the first composition for preparing the first adhesive layer or the second composition for preparing the second adhesive layer preferably further comprises 0 based on the total weight of the first composition or the second composition. 1 to 1 part by weight of a UV curing agent, wherein at least one material of the ultraviolet curing agent is selected from the group consisting of 1-hydroxy hexyl phenyl ketone and 2 hydroxy-2-methyl small phenylpropane Alcohol (2-hydr〇xy-2-methyl small phenyl propan small on), 4-(2-ylethyl)phenyl-(2-hydroxy-2-methylpropyl) ketone 10 (4-(2. Hydroxyethyl)phenyl.(2.hydroxy-2.methylpropyl)keto ne), ph〇sphate oxide, cyclopentadienyl phenyl iron hexafluorophosphate, diphenyl Diphenylketone, bis-(2,6-dimethoxybenzylidene)-t-butyl-2-mercaptoethylphosphine oxide 15 (bis-(256-dimethoxybenzoyl).t-butyl. 2-methylethylphosphin eoxide) and a group of bis(2,4,6-tdmethoxybenzoyl)phenylphosphine oxide. Further, the first composition for preparing the adhesive layer or the second composition for preparing the second adhesive layer preferably further comprises, based on the total weight of the first composition or the second composition, respectively. 1 to 2 parts by weight of the coupling agent, wherein the coupling agent is selected from the group consisting of a silane coupling agent, an aluminum coupling agent, a titanium coupling agent, and the like, but is not limited thereto. The coupling agent described above is a combination of a loose filler and a fluid resin, and can also be used as an accelerator for increasing the adhesion to adhering objects such as semiconductor wafers and substrates. . The dicing die attach film for semiconductor of the present invention can be firstly used as a continuous type of residual machine, such as a wind knife coater, a c〇_coater* coater, a g_=5: cloth machine. The adhesive layer and the second adhesive layer are coated into a film y, and then the _ layer (the first adhesive layer and the second adhesive layer) are mutually exchanged in a high temperature (6 〇 to (10) degrees Celsius) environment. The combination is finally prepared by combining (4) the second adhesive layer ±, but the preparation method of the semiconductor cost-cutting die-adhesive film of the present invention is not limited thereto. The dicing die attach film for semiconductor of the present invention is used in a semiconductor wafer process as shown in Figs. 2 to 8. In addition to the fabrication of semiconductor wafers, the portion of the dicing die attach film for semiconductors of the present invention will be described in detail below. First, Fig. 2 shows a semiconductor wafer defect. As shown in FIG. 3, a dicing 15 die attach film 100 is affixed to the back surface of the semiconductor wafer 1, and a protective film 原1 原 originally attached to the upper surface of the squeegee squeegee film 丨〇〇1 〇 Remove before performing compression bonding. As shown in FIG. 4, a semiconductor wafer cutting process first uses a tool 2 to cut the semiconductor wafer 1 into a predetermined wafer size, followed by cleaning and drying. When the dicing process is performed, the semiconductor wafer 1 and the first adhesive layer are completely cut, and the dicing film 14 仅 is only partially cut to a specific depth. As shown in Fig. 5, a picking device 3 is used to pick up the above-mentioned cut crystal grains 4. At this time, in addition to the dicing film 14 ,, the first adhesive layer and the second adhesive layer 15 299 545 are still adhered to the die 4 to allow the picking process to proceed smoothly. Also, since the adhesive force between the first adhesive layer 12G and the die 4 of the present invention is greater than the adhesive force between the adhesive layer 130 and the dicing film 140, the dicing film 14 〇 can be effective in the ordering process. The ground is separated from the second adhesive layer. After the picking process, a semiconductor wafer wire bonding process will be ordered: as shown in FIG. 6, the semiconductor wafer wire bonding process attaches the wafer to the lead frame or the substrate 5, for example - A printed circuit board or a y flexible circuit board (tape wke b_d) is then subjected to a curing process to enhance the adhesion between the die and the substrate. As shown in FIG. 7, the semiconductor wafer and the substrate are shown in a ::::: module, and finally the bonded semiconductor = ep° xymGlding semiconductor package 15 20 The preferred embodiments of the present invention will be described in the following, and the preferred embodiments are only used to limit the invention, so that it is not inferior to the spirit of the present invention. Any other equivalent hand-recognition method known to those skilled in the art can be implemented. In the comparative example, each adhesive layer was prepared according to the coating machine listed in Table i below, and then the 赦%β 乂 乂 刀 一 一 一 乂 乂 于 于 于 于 于 于 于 摄 Q Q Under the two layers of adhesive layer... After taking it, the pressure-bonded adhesive layer and the dicing film are bonded to each other by hot pressing treatment 16 1299545, and the die-adhesive film is completed. Solid epoxy resin (% by weight) Preferred Embodiment 1 Preferred Embodiment 2 Comparative Example 1 Comparative Example 2 f-layer adhesive layer adhesive layer adhesive layer first 40 second first second first first second - 44 40 40 30 36 25 30 / Night % 虱 resin Α ϋ ϋ) X&f 03⁄43⁄4 Lll rtL- 25 26 25 32 42 36 28 24 Rubber resin (% by weight) Oxygen coupling agent (Phr) ~~[Z- ---. 29 24 29 22 22 22 41 40 4 4 4 5 4 4 4 4 Extra-light photo-gyp agent (phr) 6 6 6 6 6 6 6 6 UV curing with percentage) 6 ------ 6 6 6 6 6 6 6 Filler (phr) --------- 1m rj04t ^τΛ ι 6 12 6 10 7 6 7 6 Coupling agent (Phr) 1 1 1 1 1 1 1 1 Table 1 The solid epoxy resin is BPA type-epoxy resin (solid), the liquid epoxy resin is BPA type-epoxy resin (liquid), the rubber resin is NBR, and the oxygen coupling The agent is an amine curing agent, the ultraviolet curing formulation is diacrylate, the filler is cerium oxide, and the coupling agent is a decane coupling agent. In the examples and comparative examples, the storage modulus, viscosity, ductility and interfacial peel strength of each of the die-adhesive films are measured as follows. The measurement results of 17 1299545 are shown in Table 2. Storage modulus storage modulus is based on _
5 (Universal Testing Machine，u™)於室溫（攝氏 25度）的環产 下進行分析。且測量儲存模數所需之黏著層#本的厚S ~m。第-黏著層之儲存模數應㈣：黏著層之儲存ς數 為低，且第二黏著層之儲存模數於室溫的環境下較佳介 | 50〜300 MPa 〇 10 黏力 黏力（tackiness f0rce)係藉由一黏力測試儀器於攝 氏60度的環境下進行測量，且測量黏力所需之樣本的厚度 沾叫，㈣占力測言式儀器之探針的直徑為51讓。第_黏 15著層之黏力應較第二黏著層之黏力為高，且第二黏著層之 黏力於攝氏60度的環境下較佳介於30〜350 gf。 ) 延展係數 延展係數（elongation)係藉由一試驗機（Universal 20 TeSthlg Mwhine，UTM)於室溫（攝氏25度）的環境下進行分 析。測量延展係數之黏著層樣本的厚度為25μηι。第一黏著 層之延展係數應較第二黏著層之延展係數為高。第二黏著 層之延展係數於室溫的環境下較佳介於5〇〜5〇〇 %。 18 1299545 介面剝離強色 介面剝離強度（interfacial peel strength)藉由一推/ 拉式張力儀（push pull gauge)在室溫（攝氏25度）的環境下以 ⑽度之剝離力進行測量。第一黏著層之介面剥離強度係指 5第一黏著層與晶圓之間的剝離強度；第二黏著層之介面剝 離強度係指第二黏著層與切割膜之間的剝離強度。測量介 面剝離強度所需之黏著層樣本的厚度為25μιη。此外，一介 面的剝離強度可區分為第一黏著層與晶圓之間剝離強度 (Ρ1)，以及第二黏著層與切割膜之間的剝離強度（Ρ2)，且Η 10應大於Ρ2，並P1較佳介於30〜300gf/cm。 (------ 較佳實施例1 τ--- 孕父佳實施例2 比較例1 比較例2 第一 筮一 黏著層 黏著層 黏著層 儲存模數 (MPa) (gf) 19.6 --------- 430 69 ------ 75 第一 19.6 ------- 第二 第一 第二 第一 哲一 乐—^ 95 28.5 19.4 10.8 28.1 450 55 382 420 720 420 狀反 (%) 介面杳jl雜 612 250 612 104 91.6 564.5 1?386 887 /丨 w利離5虫 度(gf/cm) 58.5 20.8 68 、—-—.1 25.4 " —一 38.5 35.5 92.5 26.2 A2 15 :據表2所列之結果可得知，在本發明 及較佳實施例2中，第裟昆 之儲存4者層之儲存模數係較第二黏著層 介面剝離強度皆，隹二者層之黏力、延展係數以及 乂 "者層為低。反觀在比較例1中，由 19 1299545 ::二！層之儲存模數高於第二黏著層之儲存模數，而 延：：：力及延展係數皆高於第一黏著層之黏力及 ^數，而此種數據並非理想的結果。而且，由於在 較例1中’第-黏著層與第二黏著層之介面剝離強度差距微 二：：使得切割後的晶粒較不容易被挑起(即造成挑片困 外？比較例2中，第一黏著層之黏力較第 4 g之黏力為鬲，此亦非理想的數據，但是，在比敕、 體晶圓於切割後所產生的晶粒較不容易被挑‘ 二：：例1之原因不同，其係因為第二黏著層之黏力值過高 的緣故。 —此，，本發明之各較佳實施例及各比較例中所製備的 母-黏著膜將依照毛邊之產生與否以及挑片之難易與否分 別予以評估如下，結果詳列於表3中。 15 20 毛邊 黏著膜與晶圓係藉由對半導體晶圓之背面進行麼合處 式予以壓合，之後再透過顯微鏡觀察晶圓在 L疋否有毛邊產生。在此所使用之黏著層的樣本之厚 又：、、25μηι。結果s觀察到毛邊則係為不理想 現象方可視作良好之結果。 ’、、、乇遭 姓片難县疮 —雖可猎由肉眼在晶粒挑片時加以觀察切割膜是否易於 攸弟-黏著層剝離，但仍必須藉由黏著層之剝離強度的數 20 1299545 值作為確切判斷的標準。因a，若第二黏著層之剝離強度 低； 則ϋ平疋為「良好」；若第二黏著層之剝離強度高 於30，則評定為「不良」。 j 交佳實施例 比較例 1 〜--- 2 1 2 無 無 有 有 良好 良好 不良 良好 毛邊 挑片難易度5 (Universal Testing Machine, uTM) was analyzed at room temperature (25 degrees Celsius). And measure the thickness of the adhesive layer #本本, which is required to store the modulus. The storage modulus of the first-adhesive layer should be (4): the storage number of the adhesive layer is low, and the storage modulus of the second adhesive layer is preferably in the environment of room temperature | 50~300 MPa 〇10 Stickiness (tackiness) F0rce) is measured by a viscoelastic test instrument in an environment of 60 degrees Celsius, and the thickness of the sample required to measure the viscosity is squeaked. (4) The diameter of the probe of the tamper-detecting instrument is 51. The adhesive force of the first adhesive layer should be higher than the adhesive force of the second adhesive layer, and the adhesive force of the second adhesive layer is preferably between 30 and 350 gf in an environment of 60 degrees Celsius. ) The elongation factor The elongation coefficient was analyzed by a test machine (Universal 20 TeSthlg Mwhine, UTM) at room temperature (25 ° C). The thickness of the adhesive layer sample measuring the elongation coefficient was 25 μm. The elongation coefficient of the first adhesive layer should be higher than the elongation coefficient of the second adhesive layer. The elongation coefficient of the second adhesive layer is preferably between 5 〇 and 5 〇〇 % in a room temperature environment. 18 1299545 Interfacial peel strength The interfacial peel strength was measured by a push pull gauge at room temperature (25 ° C) with a peel force of (10) degrees. The interface peel strength of the first adhesive layer refers to the peel strength between the first adhesive layer and the wafer; the interface peel strength of the second adhesive layer refers to the peel strength between the second adhesive layer and the cut film. The thickness of the adhesive layer sample required to measure the peel strength of the interface was 25 μm. In addition, the peel strength of one interface can be distinguished as the peel strength between the first adhesive layer and the wafer (Ρ1), and the peel strength between the second adhesive layer and the cut film (Ρ2), and Η 10 should be greater than Ρ2, and P1 is preferably between 30 and 300 gf/cm. (------ Preferred Embodiment 1 τ--- Pregnant Parents Example 2 Comparative Example 1 Comparative Example 2 First 筮-adhesive layer adhesive layer storage layer storage modulus (MPa) (gf) 19.6 -- ------- 430 69 ------ 75 First 19.6 ------- Second First Second First Zhe Yile - ^ 95 28.5 19.4 10.8 28.1 450 55 382 420 720 420形反(%) interface 杳jl 612 250 612 104 91.6 564.5 1?386 887 /丨w away from 5 insects (gf/cm) 58.5 20.8 68 , ————1 25.4 " —a 38.5 35.5 92.5 26.2 A2 15 : According to the results listed in Table 2, in the present invention and the preferred embodiment 2, the storage modulus of the layer 4 of the storage layer of the second layer is higher than that of the second layer of the adhesive layer. The adhesion, elongation coefficient, and 乂" layer of the layer are low. In contrast, in Comparative Example 1, the storage modulus of the 19 1299545 ::2 layer is higher than the storage modulus of the second adhesion layer, and the delay is: The force and elongation coefficients are higher than the adhesion and number of the first adhesive layer, and such data is not an ideal result. Moreover, since the interface between the first-adhesive layer and the second adhesive layer is peeled off in the first example Intensity gap : makes the crystal grains after cutting less likely to be provoked (ie, causing the picks to be trapped outside? In Comparative Example 2, the adhesion of the first adhesive layer is lower than that of the 4th g, which is not ideal data, However, the grain produced after the dicing of the wafer and the wafer is less likely to be picked. The reason for the case of Example 1 is that the viscosity of the second adhesive layer is too high. The mother-adhesive film prepared in each of the preferred embodiments and the comparative examples of the present invention will be evaluated as follows according to whether or not the burrs are generated or not, and the results are detailed in Table 3. 20 The burr adhesive film and the wafer are pressed by the back surface of the semiconductor wafer, and then observed through the microscope to see if the wafer has burrs in the L. The sample of the adhesive layer used here is Thick and:,, 25μηι. Results s observation of the burrs are not ideal phenomenon can be regarded as a good result. ',,, 乇 乇 乇 片 片 片 片 片 — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Is it easy to cut the film? The adhesive layer is peeled off, but it still has to be borrowed. The peeling strength of the adhesive layer is 20 1299545 as the criterion for the exact judgment. Because a, if the peel strength of the second adhesive layer is low, the flatness is "good"; if the peel strength of the second adhesive layer is higher than 30, It is rated as "bad". j Good example of comparison Example 1 ~--- 2 1 2 No good and bad, good edging and easy to pick
1010
表3 依據表3所列之結果可得知，本發明之各較佳實施例並 未觀察到任何毛邊現象的產生，且在進行挑片製程時顯示 出良好的挑片屬性。反觀在比較例中，其切割屬性較本發 明之各較佳實施例為差，除了導致毛邊現象的產生外，^ 挑片屬性表現亦較差，導致整體製程之品質亦隨之下降。 一如上所述，本發明之半導體用切割晶粒黏著膜完全符 合半導體製程所需求之物理屬性，㈣使用本發明之半導 體用切害，J晶粒黏著膜切害j而成的半導體晶片不易產生毛 邊’且容易進行挑片處理。因此，前述之本發明所預定的 各目的皆可達成。 上述本發明之各較佳實施例及其搭配之圖示僅為了方 便說明本發明之技術特徵而舉例而已，本發明所主張之權 利範圍自應以申請專利範圍所述為準，而非僅限於上述實 施例，因此本發明之保護範圍當視後附之申請專利範圍戶^ 界定者為準。 21 20 1299545 ' 產業利用性 如上所述，本發明之半導體用切割晶粒勒著膜可有效 地防止切割而出之毛邊現象，且簡化挑片製程的困難戶， 且於打線焊接製料保持晶粒與基板之収夠的黏著=。 因此’本發明之半導體用切割晶粒黏著膜可 裝製程的品質。 什十v體封Table 3 According to the results listed in Table 3, it was found that the preferred embodiments of the present invention did not observe any occurrence of burrs and exhibited good pick properties during the picking process. In contrast, in the comparative example, the cutting property is inferior to the preferred embodiments of the present invention, and in addition to causing the occurrence of burrs, the performance of the picking property is also poor, resulting in a decrease in the quality of the overall process. As described above, the dicing die attach film for a semiconductor of the present invention completely conforms to the physical properties required for the semiconductor process, and (4) the semiconductor wafer formed by the use of the semiconductor chip of the present invention and the J die attach film is not easily produced. The burrs are 'easy to pick and place. Therefore, the foregoing objects of the present invention can be achieved. The above description of the preferred embodiments of the present invention and the accompanying drawings are merely illustrative of the technical features of the present invention, and the scope of the claims is intended to be The above-mentioned embodiments, therefore, the scope of protection of the present invention is subject to the definition of the patent application. 21 20 1299545 'Industrial Applicability As described above, the dicing die-casting film for semiconductors of the present invention can effectively prevent burrs from being cut, and simplifies the difficulty of the picking process, and maintains the crystal in the wire bonding process. Adhesion of the granules to the substrate = Therefore, the dicing die attach film for a semiconductor of the present invention can be processed in a process quality. Shi ten v body seal
10 【圖式簡單說明】 圖1係本發明一較佳實施例之切割 圖。 晶粒黏著膜之斷面剖視 圖2至圖8係一利用本發明一 之半導體封裝製程的示意圖 較佳實施例之切割晶粒黏著膜 15 【主要元件符號說明】10 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cutaway view of a preferred embodiment of the present invention. Cross-sectional view of a die attach film FIG. 2 to FIG. 8 are schematic views of a semiconductor package process using the present invention. The die die attach film of the preferred embodiment 15 [Explanation of main component symbols]
100切割晶粒黏著膜 120第一黏著層 1半導體晶圓 4晶粒 7環氧樹脂封模 130第二黏著層 2刀具 5基板 11 〇基膜 Mo切割膜 3挑片裝置 6打線 22100-cut die attach film 120 first adhesive layer 1 semiconductor wafer 4 die 7 epoxy resin mold 130 second adhesive layer 2 cutter 5 substrate 11 base film Mo cut film 3 pick device 6 line 22