1298 16^wf.doc/e 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種探針的檢測方法，且特別是有關 於一種探針之位置與針壓的檢測方法。 【先前技術】 一般來說’半導體的封裝測試可區分為兩大部份，分 別疋在晶圓加工完成後的晶圓測試（wafer probe and1298 16^wf.doc/e IX. Description of the Invention: [Technical Field] The present invention relates to a method for detecting a probe, and more particularly to a method for detecting the position and acupressure of a probe. [Prior Art] In general, the semiconductor package test can be divided into two parts, which are wafer test after wafer processing is completed.
sort)’以及封裝完成後的成品測試(final test)。晶圓測試是 利用晶圓探測機(pr〇ber)上探針卡(pr〇be card)的探針與受 測晶圓的切割道(scribe line)上所配置的測試鍵(㈣如力連 接來進行測試，而此測試鍵與晶粒上之某一元件結構相 同。然後，將測得的資料送往測試機(tester)作分析與判斷， ff理f各晶簡可修補轉，經由f射修補機依據此資 =不良的树#換掉，之後再經晶圓探測通過後，即止 完成。 σ : ΤΛ咧試鍵連接時會因為探針之針壓大小不 =而在，鍵的銲墊(pad)表面 : 就是既，當針壓過大時，探針I在 也 痕，而當舰過小時，探針 ^上1^成A面積的刻 探針之針壓大小往往會造“二面積的刻痕。 的量測。舉例來說，針壓過大二】得:二’而影響電性 測試結果。 ㈢使侍接觸笔阻過大而影響 針對上述問題，目前多 式來觀測贿的面積判 人工利⑽微鏡觀測的方 積仏針壓大小，並藉由調整探針的 5 ^29814Svfd0C/e 高度來調整針壓。然而，使用人工的方式往往會浪費過多 的時間，且判定針壓大小的精準度也較低。 此外，在進行晶圓測試時，很容易在探針與銲墊之間 產生對準失誤(miss_alignment)的問題。對於一個晶粒來 說，假如探針的對準偏差為1μπι，在經過1〇個晶粒之後， 探針的偏差則可能為10μπι。因此，當晶圓的尺寸越做越 大以及測試用的銲墊越做越小時，探針與銲墊之間便會產 生相當嚴重的對準失誤。 【發明内容】 、本發明的目的就是在提供一種探針之位置的檢測方 法’可以避免在進行電性量測時發生探針對準失誤的問題。 、本發明的另一目的是提供一種探針之針壓的檢測方 法’可以將針壓量化以及增加電性量測的可靠度與精確度。 曰本發明提出一種探針之位置的檢測方法，此方法是先 ，供一晶圓’此晶圓之切割道上具有—個測試區域、多個 ;一測試鍵與多個第二測試鍵。測試區域分為多個次區 或，而廷些次區域以矩陣的方式排列。在每—個次區域中 具有-個第-單元與—個第二單元，且 元電性不相連接，1中同一 时二早 LL^L ^ τΗ列中的弟一早兀藉由第一導線 接並對應連接其中—個第—測試鍵，而同一行 白、^=單元藉由第二導線彼此電性連接並對應連接其中 =弟二測試鍵。然後，將探針接觸測試區域，使探針連 猎由〃鉍針連接的至少一個次區域中之第一單元與第 U981 氣 doc/e ，兀，使對應至少一個次區域中之第一單元的第一測試 對應至少一次區域中之第二單元的第二測試鍵接收此 二二之後，根據接收到電壓之第一測試鍵與第二測試鍵 獲传探針與測試區域接觸之位置。 士發明另提出一種探針之針屋的檢測方法，此方法是 ，士-晶圓，此晶圓之切割道上具有一個測試區域、多個 ^測:,鍵與多個第二測試鍵。測試區域分為多個次區 二m域以矩陣的方式排列。在每—個次區域中 i雷單元與—個第二單元，且第-單元與第二單 被Jf Ή目連接!其中同一列中的第一單元藉由第一導線 中的】二接f對f連接其中一個第-測試鍵，而同-行 -個裳==猎由第二導線彼此電性連接並對應連接其中 接至小式鍵。然後’將探針接觸測試區域，使探針連 i 域中之第一單元與第二單元，並施加電 二單元，使對應至少二μ之第一咖 鍵與對應至少—次區域中^域^之第:單元的第一測試 電壓。接著，根據接收到電的第二測試鍵接收此 獲得與探針連接之至少—二之罘一測試鍵與第二測試鍵 量與參考值進行比對，以c量。之後，將此數 的相對關係。 衣針之針壓與參考針壓之間 本發明將測試區域分匈 鍵’而 同—行的次區域中料1元對^至二 域，且同一列的次區域中Ί矩陣方式排列的次區 而同一轩66士反以a /單元對應至一第一測試 第二測試 :wf.doc/e :wf.doc/e 鍵 測試區域並施加電_，根據接收到 與第二賴鍵來獲得探針與測試區域接 =3=此可以在進行電性量測前，預先檢測 失誤的情形? 叫免在物·量_發生對準 〜此本發明還可以根據接收到錢之第—測試鍵盘 :::::來獲得與探針連接之次區域的數量，並將此數 篁契茶考健比較，關定探狀針壓是_大或過小， ，此可以將探針之針壓量化域由量㈣結果對探針進行 权準避免了以人工方式利用顯微鏡觀測刻痕面積所產生 的誤差，且縮短了檢測探針之針壓的時間。 、 為讓本翻之上述和其他目的、特徵和優點能更明顯 '重’下文特舉實施例，並配合_圖式，作詳細說明如 下0 【實施方式】 圖1為依照本發明實施例所繪示的檢測探針之位置的 之步驟流程圖。請參照圖丨，首先，在步驟1〇〇中， 一晶圓，此晶圓之切割道上具有一個測試區域、多個 第二测試鍵與多個第二測試鍵。在本實施例中，對於第一 測喊鍵與第二賴鍵並不加以限定，其可以是與晶粒上之 任一 70件具有相同結構的測試元件。測試區域分為多個次 區域’而這些次區域以矩陣的方式排列。以下將以4x4的 矩陣為例來對本發明做說明。 圖2為依照本發明實施例所繪示的晶圓之切割道的上 1298 麻砲。c/e 視示意圖。圖3A為依照本發明實施例所繪示的次區域pn 之上視示意圖。圖3B為依照圖3A中I-Ι，剖面所纷示的剖 面示意圖。圖3C為依照圖3A中ΙΙ-ΙΓ剖面所繪示的剖面 示意圖。請同時參照圖2、圖3A、圖3B與圖3C，切割道 200上具有一個測試區域2〇2、第一測試鍵 與第二測試鍵206·1〜206-4。測試區域202分為次區域 Pij ’ 1為1〜4 ’ j為1〜4。次區域Pij例如是利用位於測試 區域202的基底201中之淺溝渠隔離結構(未繪示)所隔離 出來的區域，也就是所謂的主動g(activearea)。在每一個 次區域中具有一個單元212與一個單元214，且單元212 與單元214電性不連接。單元212與單元214位於介電層 215中，而介電層215位於已形成有内連線結構(未繪示) 的基底201上，單元212例如為環狀導體結構，其形狀例 如為，形或矩形，而在本實施例中是以圓形為例來做說 明。單元214例如為插塞，且環狀導體結構位於插塞之頂 部周圍。 ' 此外，同一列中的單元212藉由導線216彼此電性連 接並，應連接其中一個第一測試鍵，而同一行中的單元 214藉由導線218彼此電性連接並對應連接其中一個第二 測試鍵。舉例來說，位於同一列中的次區域&、Pn、& 與P二中的單元212對應連接至第一測試鍵20U，而位於 同-行中的次區域Pu、ρ2ι、p3i與&中的單元214對應 連接至第二測試鍵施]。單元212、單元214、導線训 人$線218的形成方法與一般熟知的内連線製程相同，於 9 此不再贅述。 她f繼續參照圖1與圖2，然後，在步驟搬中，將探 :广接=顧區。域2〇2，使探針連接至少一個次區域巧中之 ^個1二:兀214 ’並施加㈣，藉由與探針連接的至 Y之單元212與單元214，使對應至少-垃二V二一之單凡212的第一測試鍵與對應至少-次區 驟lL 早兀214的第二測試鍵接收此電愿。之後，在步 、舉，來說’當探針接觸測試區域搬並施加電麗時， =測試鍵204_卜2G4_2以及第二測試鍵脈3與2〇6_4 ^電Μ ’㈣試人驗據接㈣電壓 ^到第-測試鍵购與第二測試鍵 忍 =3、對應到第-測試鍵购與第二測試鍵施_4的次 ^ ^4、對應到第-測試鍵2〇4_2與第二測試鍵脈3的 :1H3、對應到第一測試鍵2〇4_2與第二測試鍵206_4 、-人=域1>24即為探針與測試區域2⑽接觸之位置。 $別提的疋’上述方法除了可以檢測探針之位置之 外，逛可以用來檢測探針之針壓。 奸在另-實施例中’在步驟1G4之後，根據接收到電壓 23_與第二測試鍵’可以獲得與探針連接之次區 以上例說明’此數量為4)。之後’將此數量與表 關係。i丁之針壓與標準針壓之間的相對 難上述的茶考值視產品的需要而有所不同，其可以是 10 I298l4a.d0c/e 一個2值或是一個範圍。在一實施例中，當此數量大於參 t值時’探針之針壓與標準針壓之間的相對關係被判定為 才木^十之針壓大於標準針壓。在另一實施例中，當此數量小 ，芩考值時，探針之針壓與標準針壓之間的相對關係被判 =為板針之針壓小於標準針壓。如此一來，便可以將每_ 人=探針進行電性量測時的針壓量化，以方便檢測探針的 針壓是否過大或過小。此外，上述方法還可以避免以人工 方式利用顯微鏡觀_痕面積所產生的誤差，以及縮短了 檢測的時間。 除此之外 m 社刊疋採針的針壓是否過大或過小之後， =須將探針加以娜，以使電性量賴可靠度與精確度 因此1#探針之針壓大於標準針壓時，將探針的高 S二二f捸針遠離晶圓以減小探針與晶圓的接觸面積， 針壓至參考值。或者，當探針之針壓小於標 二 的高度降低’使探針接近晶圓以增加探 ==接:面;、’以增加探針之針壓至參考值。如此 使得a㈣便可以精確地控讎針的針壓， 便付日日圓上母一點的針壓都， 可靠度與精確度。袖，亚大幅提高電性量測的 特別值得一提的是，一I太 座(chuck)的平坦度是 11台中用來固定晶圓的吸 來产 要^師或廠商定期校驗的。一般 而使得製程必須以進行校驗， 述的方法可以在量測她直接=== 1298 Hc/e 關資訊 也就疋說，當晶圓上各點的針壓不平均時，即代 表吸座的平坦度產生問題，工程師可以馬上調整吸座的平 坦度。此外’在每次進行電性量測時就可隨時監控吸座的 平坦$ ’且不需停機或可延長定期校驗之時間。 &上所述’本發明利用以矩陣方式排列的次區域，且 將同列的次區域巾的第—單元對應連接至—個第一測試 鍵’以及將同一行的次區域中的第二單元對應連接至-個 弟二測試鍵，並在探針接觸職區域且施加電壓時，根據 電壓的第—測試鍵與第二測試鍵來獲得探針與測試 、U，位置1因此可以檢測出探針位置是否偏差，以 避免在進彳了電性制時發生對準失誤的情形。 ―此外本u還可以根據接收到電壓之第—測試鍵盘 t測=鍵來獲得與探針連接之次區域的數量，並將此數 3麥考值做比較，以判定探針之針壓是否過大或過小， 將= 十之針壓進行量化並藉由量化的結果對探針 、’, 了以人工方式利用顯微鏡觀測刻痕面積所 由將針壓量化的結果對探針進行校準，避免了以人1方ΐ 微鏡觀_痕面積所產生的誤差，以及縮短了檢2 再者利用本务日月之方法還可以在機台運作中，同 檢測晶圓吸錢平坦度，而不s _ =影響製程產量的問題，並可以隨時制晶圓吸 12 1298 雖然本發明已以貫施例揭露缺 本發明，任何孰習此技蓺者，f …〜、I非用从限定 H自此H在不脫離本發 ，内，可作些許之更動與潤傅，因此本發明之 虽視後附之中請專利範圍所界…蔓乾圍 【圖式簡單說明】 / 方照本發明實施例所繪示的檢測探針之位置的 方法之步驟流程圖。 的 圖 圖2為依照本發明實施酬繪示的_道之上視示意 施例所繪示的次區域之上視示 圖3A為依照本發明實 意圖。 、 H’剖面所繪示的剖面示意圖。 ΙΗΓ剖面所緣示的剖面示意圖。 圖3B為依照圖3A中 圖3C為依照圖3A中 【主要元件符號說明】 100〜104 :步驟 200 :切割道 201 ·基底 202 :測試區域 购〜204七第1試鍵 206-1〜206七第二測試鍵 212、214 :單元 215 :介電層 216、218 :導線 Ριι〜P44 :次區域Sort)' and the final test after the package is completed. The wafer test is performed by using a probe of a pr〇be card on a wafer prober and a test button configured on a scribe line of the wafer to be tested ((4) To test, and the test key has the same structure as a certain component on the die. Then, the measured data is sent to the tester for analysis and judgment, and the crystals can be repaired and transferred. The shot repairing machine is replaced according to this resource = bad tree #, and then after the wafer is detected and passed, it is completed. σ : When the test button is connected, the needle pressure of the probe is not =, and the key Pad surface: It is that when the needle pressure is too large, the probe I is also marked, and when the ship is too small, the needle pressure of the probe on the probe ^1 into the A area tends to make " The measurement of the two-area nick. For example, the needle pressure is too large to get the second: and affects the electrical test results. (3) The contact resistance is too large and the impact on the above problems, the current multi-modality to observe bribery The area is judged by artificial (10) micro-mirror observation of the square pin diameter and adjusted by adjusting the probe's 5 ^29814Svfd0C/e height. Acupressure. However, the use of manual methods tends to waste too much time and the accuracy of the needle pressure is also low. In addition, it is easy to create alignment between the probe and the pad during wafer testing. The problem of miss_alignment. For a die, if the alignment deviation of the probe is 1 μm, the deviation of the probe may be 10 μm after passing through one die. Therefore, when the size of the wafer is larger The larger the soldering pad and the smaller the solder pad for testing, the more serious misalignment between the probe and the pad. SUMMARY OF THE INVENTION The object of the present invention is to provide a probe position detection. The method 'can avoid the problem of misalignment of the probe when performing electrical measurement. Another object of the present invention is to provide a method for detecting the acupressure of the probe, which can quantify the needle pressure and increase the electrical measurement. Reliability and accuracy. The present invention provides a method for detecting the position of a probe. First, a wafer is provided with a test area and a plurality of test streets. And a plurality of second test keys. The test area is divided into a plurality of sub-areas or sub-areas arranged in a matrix, and each of the sub-areas has - a --unit and a second unit, and The meta-electricity is not connected. In the same time, the younger brother of the LL^L^ τΗ column in the first two hours is connected by the first wire and correspondingly connected to the first-test key, and the same line is white, ^= unit borrows The second wire is electrically connected to each other and correspondingly connected to the test button. Then, the probe is contacted with the test area, so that the probe is connected to the first unit and the U981 in at least one sub-area connected by the needle. The gas doc/e, 兀, causes the first test corresponding to the first unit in the at least one sub-region to correspond to the second test key of the second unit in the at least one region, after receiving the second test, according to the first test of receiving the voltage The key and the second test key capture the position where the probe contacts the test area. The invention also proposes a method for detecting a needle house of a probe. The method is a slab-wafer having a test area, a plurality of tests, a key and a plurality of second test keys on the scribe line of the wafer. The test area is divided into multiple sub-areas. The two m-domains are arranged in a matrix. In each sub-region, the i-ray unit and the second unit are connected, and the first unit and the second unit are connected by the Jf item! wherein the first unit in the same column is connected by the second wire in the first wire One of the first-test keys is connected to f, and the same-line-single==hunting is electrically connected to each other by the second wire and the corresponding connection is connected to the small key. Then 'contact the probe to the test area, connect the probe to the first unit and the second unit in the i domain, and apply the electric two unit so that the first coffee key corresponding to at least two μ corresponds to at least the second area ^The first: the first test voltage of the unit. Then, according to the received second test button, the at least two test keys and the second test key connected to the probe are compared with the reference value, and the amount is c. After that, the relative relationship of this number. Between the needle pressure of the needle and the reference needle pressure, the present invention divides the test area into Hungarian keys and the sub-regions of the same line are 1 yuan to 2 to the second domain, and the sub-regions of the same column are arranged in the order of the matrix. District and the same Xuan 66 counter against a / unit corresponding to a first test second test: wf.doc / e: wf.doc / e key test area and apply electricity _, according to the receipt of the second Lai key The probe is connected to the test area=3=This can detect the error beforehand before the electrical measurement? Calling the object/quantity_ Alignment~ This invention can also be based on the receipt of the money-test key Disk::::: to obtain the number of sub-areas connected to the probe, and compare this number with the tea test, and determine whether the probe pressure is _large or too small, which can press the needle of the probe The quantification of the quantized domain by the amount (4) results in the probe avoids the error caused by manually observing the scoring area by the microscope and shortens the time for detecting the acupressure of the probe. The above and other objects, features and advantages of the present invention will become more apparent and <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; A flow chart of the steps of detecting the position of the probe. Referring to the figure, first, in step 1, a wafer has a test area, a plurality of second test keys and a plurality of second test keys on the scribe line of the wafer. In the present embodiment, the first sensing key and the second bonding key are not limited, and may be test elements having the same structure as any of the 70 pieces on the die. The test area is divided into a plurality of sub-areas' and these sub-areas are arranged in a matrix. The present invention will be described below by taking a 4x4 matrix as an example. 2 is an upper 1298 cannon of a wafer scribe line according to an embodiment of the invention. c/e is a schematic diagram. FIG. 3A is a top view of a sub-region pn according to an embodiment of the invention. Fig. 3B is a cross-sectional view showing the section taken along the line I-Ι in Fig. 3A. Figure 3C is a schematic cross-sectional view taken along the ΙΙ-ΙΓ section of Figure 3A. Referring to FIG. 2, FIG. 3A, FIG. 3B and FIG. 3C simultaneously, the cutting path 200 has a test area 2〇2, a first test key and second test keys 206·1 to 206-4. The test area 202 is divided into sub-regions Pij '1 and 1 to 4' j is 1 to 4. The sub-region Pij is, for example, an area isolated by a shallow trench isolation structure (not shown) located in the substrate 201 of the test area 202, that is, a so-called active area (active area). There is one unit 212 and one unit 214 in each sub-area, and unit 212 and unit 214 are not electrically connected. The unit 212 and the unit 214 are located in the dielectric layer 215, and the dielectric layer 215 is located on the substrate 201 on which an interconnect structure (not shown) has been formed. The unit 212 is, for example, a ring-shaped conductor structure having a shape such as a shape. Or a rectangle, but in the embodiment, a circle is taken as an example for illustration. Unit 214 is, for example, a plug and the looped conductor structure is located around the top of the plug. In addition, the units 212 in the same column are electrically connected to each other by the wires 216, and one of the first test keys should be connected, and the units 214 in the same row are electrically connected to each other by the wires 218 and correspondingly connected to one of the second. Test key. For example, the sub-regions &, Pn, & and P2 in the same column are connected to the first test key 20U, and the sub-regions Pu, ρ2ι, p3i, and & The unit 214 is correspondingly connected to the second test button. The method of forming the unit 212, the unit 214, and the wire train $ line 218 is the same as that of the generally known interconnect process, and will not be repeated here. She f continues to refer to Figure 1 and Figure 2, and then, in the step of moving, will explore: wide access = area. The field 2〇2, the probe is connected to at least one sub-region of the first one: 兀214′′ and (4) is applied, and the unit 212 and the unit 214 connected to the Y are connected to the probe, so that the corresponding at least The first test key of the V-one unit 212 and the second test key corresponding to the at least-time interval lL early 214 receive the wish. After that, in the step, lift, say, 'When the probe touches the test area and applies the battery, the test button 204_b 2G4_2 and the second test button pulse 3 and 2〇6_4 ^电Μ '(4) testimonial Connect (4) voltage ^ to the first - test key purchase and the second test key tolerate = 3, corresponding to the first - test key purchase and the second test key application _4 times ^ ^ 4, corresponding to the first - test key 2 〇 4_2 and The second test key 3: 1H3, corresponding to the first test key 2〇4_2 and the second test key 206_4, - person = domain 1 > 24 is the position where the probe is in contact with the test area 2 (10). $ don't mention 上述' In addition to detecting the position of the probe, the above method can be used to detect the needle pressure of the probe. In the other embodiment, after the step 1G4, the sub-region connected to the probe can be obtained according to the received voltage 23_ and the second test key'. The above description is 'this number is 4'. Then 'this number is related to the table. The relative difficulty between the needle pressure and the standard needle pressure is different depending on the needs of the product. It can be a value of 2 I298l4a.d0c/e or a range. In one embodiment, when the amount is greater than the value of t, the relative relationship between the needle pressure of the probe and the standard needle pressure is determined to be greater than the standard needle pressure. In another embodiment, when the amount is small, the relative relationship between the needle pressure of the probe and the standard needle pressure is judged as = the needle pressure of the needle is less than the standard needle pressure. In this way, the needle pressure can be quantified when each _ person = probe is electrically measured to facilitate detection of whether the needle pressure of the probe is too large or too small. In addition, the above method can also avoid the manual use of the error caused by the microscopic area and the detection time. In addition, if the needle pressure of the needle is too large or too small, the probe must be added to make the electrical quantity depend on reliability and accuracy. Therefore, the needle pressure of the 1# probe is greater than the standard acupressure. When the probe is moved from the wafer to reduce the contact area between the probe and the wafer, the needle is pressed to the reference value. Alternatively, when the needle pressure of the probe is less than the height of the target, the height of the probe is lowered to bring the probe close to the wafer to increase the sense of the surface of the probe; to increase the needle pressure of the probe to the reference value. In this way, a (4) can accurately control the needle pressure of the needle, and then the needle pressure on the female point of the Japanese yen is paid, reliability and accuracy. Sleeve, sub-larger electrical measurement is particularly worth mentioning, the flatness of a chuck is the number of suctions used to fix wafers in 11 units. Generally, the process must be verified. The method described can be measured directly by her === 1298 Hc/e. The information is also said. When the needle pressure at each point on the wafer is not uniform, it means the suction. The flatness creates problems and the engineer can immediately adjust the flatness of the suction cup. In addition, the flatness of the suction cup can be monitored at any time during each electrical measurement without any downtime or extended periodic calibration. & described above, 'the present invention utilizes sub-regions arranged in a matrix, and connects the first cell of the sub-regional towel of the same column to the first test key' and the second cell of the sub-region of the same row Corresponding to the connection to the second test button, and when the probe contacts the working area and the voltage is applied, the probe and the test are obtained according to the first test key and the second test key of the voltage, and the position 1 can be detected. Whether the needle position is deviated to avoid an alignment error when the electrical system is inserted. ―In addition, the u can also obtain the number of sub-areas connected to the probe according to the received voltage-test keyboard t== key, and compare the number of the three McCaw values to determine the needle pressure of the probe. Whether it is too large or too small, quantify the pressure of the ten needles and calibrate the probe by quantifying the result of the needle pressure by manually measuring the surface of the notch by using the quantified result. The error caused by the micro-mirror view and the shortened inspection area can also be used in the operation of the machine, and the flatness of the wafer is not detected. s _ = problem affecting process yield, and can be used to make wafers at any time. 12 1298 Although the present invention has disclosed the invention by way of example, any skilled person, f ... ~, I is not limited to H This H does not deviate from the hair, and can be used to make some changes and invigorating. Therefore, the scope of the patent is bounded by the scope of the invention... 蔓干围 [Simple description of the drawing] / The implementation of the present invention A flow chart of the steps of the method for detecting the position of the probe is illustrated. Figure 2 is a top view of the sub-area illustrated in accordance with an exemplary embodiment of the present invention. Figure 3A is a representation of the present invention in accordance with the present invention. And a schematic cross-section of the H' section. A schematic cross-section of the ΙΗΓ section. FIG. 3B is a diagram of FIG. 3A according to FIG. 3A according to FIG. 3A [main element symbol description] 100 to 104: step 200: cutting path 201 · base 202: test area purchase ~ 204 seven first test key 206-1~206 seven Second test key 212, 214: unit 215: dielectric layer 216, 218: wire Ριι to P44: sub-region