TWI298161B - Ferroelectric storage device - Google Patents
Ferroelectric storage device Download PDFInfo
- Publication number
- TWI298161B TWI298161B TW094136689A TW94136689A TWI298161B TW I298161 B TWI298161 B TW I298161B TW 094136689 A TW094136689 A TW 094136689A TW 94136689 A TW94136689 A TW 94136689A TW I298161 B TWI298161 B TW I298161B
- Authority
- TW
- Taiwan
- Prior art keywords
- bit line
- potential
- circuit
- storage device
- ferroelectric
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 description 14
- 230000000295 complement effect Effects 0.000 description 10
- 238000001514 detection method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2297—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Description
1298161 電位， 其中該電位控制電路連同該第一電晶體、該第二電晶 體、該第三電晶體及該第四電晶體建立一電流鏡電路， 及 5 該時序控制電路包含一判斷電路其判斷該互補參考 位元線的一電位是否達到一預定範圍。 5. 如申請專利範圍第4項所述之鐵電儲存裝置，其中該判 斷電路包含一轉移自該互補參考位元線所檢測的一檢測 信號之參考位準的位準轉移電路、及一判斷具有該轉移 10 之參考位準的檢測信號是否達到一預定位準的信號位準 判斷電路。 6. 如申請專利範圍第5項所述之鐵電儲存裝置，其中該位 準轉移電路包含一電容器元件，其截止一直流成分並允 許該檢測信號的一波動成分通過； 15 —放大器，其放大通過該電容器元件的波動成分； 一等化器電路，其使該放大器的一輸入信號位準與一 輸出信號位準幾乎與一預定匹配電位匹配； 一電阻器元件，其藉由將該電容器元件接收該檢測信 號之一輸入的輸入側端連接至該參考電位，將該電容器 20 元件的一輸入側端從該參考電位轉移； 一第三切換元件，具有輸入至該電容器元件之輸入側 端的檢測信號；及 一第四切換元件，當該檢測信號被輸入至該電容器元 件的輸入側端時，將該電阻器元件與該輸入侧端分開， 41 .1298161 及 其中與該電容器元件連接之該放大器的輸入側係藉 由分開該電阻器元件，而自該匹配電位轉移。 7.如申請專利範圍第3項所述之鐵電儲存裝置，更包含有 5 一放大該位元線與該互補位元線之間的一電位差之减測 放大器， 其中該時序控制電路產生一啟動信號，該啟動信號控 制該感測放大器的一啟動時序。 8·如申請專利範圍第7項所述之鐵電儲存裝置，更包含有 10 一電路，其根據一表示該感測放大器之啟動時序的一限 制時間點的限制時間點信號、與該啟動信號中的至少一 個信號，來啟動該感測放大器。 9.一種鐵電儲存裝置，包含有： 鐵電電容器’其各自保留互補的資料； 15 位元線’其從該等鐵電電容器接收數份互補資料的個 別輸出；及 一檢測電路’其在輸出至該等位元線之兩份互補資料 穩定之前，檢測這些互補資料之間的一電位差。 1〇·如申請專利範圍第9項所述之鐵電儲存裝置，更包含有 20 一電位控制電路，其在由該等鐵電電容器所保留之資料 被讀至該等位元線的情况下，減少該等位元線的電位。 11·一種鐵電儲存裝置，包含有： 鐵電電容器，其各自保留互補的資料； 位元線’接收來自該等鐵電電容器之數份互補資料的 42 .1298161 個別輸出； 一板線，用來將電壓施加至該等鐵電電容器； 一字線，用來給予該等鐵電電容器的一資料輸出指 令； 5 一電壓控制電路，其在該資料輸出指令係經由該字線 所給予且該等電壓經由該板線被施加的情況下，減少該 等位元線之電位；及 一檢測電路，其在兩份輸出至該等位元線之互補資料 穩定之別’檢》則這些互補貧料之間的·一電位差。 43
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005197945A JP4295253B2 (ja) | 2005-07-06 | 2005-07-06 | 強誘電体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200703329A TW200703329A (en) | 2007-01-16 |
| TWI298161B true TWI298161B (en) | 2008-06-21 |
Family
ID=37618155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094136689A TWI298161B (en) | 2005-07-06 | 2005-10-20 | Ferroelectric storage device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7200029B2 (zh) |
| JP (1) | JP4295253B2 (zh) |
| KR (1) | KR100756612B1 (zh) |
| TW (1) | TWI298161B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI861483B (zh) * | 2019-09-13 | 2024-11-11 | 日商鎧俠股份有限公司 | 半導體記憶裝置 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007063678A1 (de) * | 2007-08-06 | 2010-07-15 | Qimonda Ag | Halbleiterspeicher und Verfahren zum Betreiben eines Halbleiterspeichers |
| US7933138B2 (en) * | 2009-01-30 | 2011-04-26 | Texas Instruments Incorporated | F-RAM device with current mirror sense amp |
| KR101926336B1 (ko) * | 2010-02-05 | 2019-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8686415B2 (en) * | 2010-12-17 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5733033B2 (ja) * | 2011-06-06 | 2015-06-10 | 富士通セミコンダクター株式会社 | 強誘電体メモリ |
| JP2013033566A (ja) * | 2011-08-01 | 2013-02-14 | Fujitsu Semiconductor Ltd | 半導体メモリおよびシステム |
| JP6538426B2 (ja) | 2014-05-30 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| US10083731B2 (en) * | 2016-03-11 | 2018-09-25 | Micron Technology, Inc | Memory cell sensing with storage component isolation |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001319472A (ja) | 2000-05-10 | 2001-11-16 | Toshiba Corp | 半導体記憶装置 |
| JP4099349B2 (ja) | 2002-06-04 | 2008-06-11 | 富士通株式会社 | 強誘電体メモリ |
| JP4093827B2 (ja) * | 2002-08-28 | 2008-06-04 | 富士通株式会社 | タイミング調整回路 |
| KR100506450B1 (ko) | 2003-01-24 | 2005-08-05 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리를 이용한 테스트 모드 제어 장치 |
| KR100506459B1 (ko) | 2003-09-08 | 2005-08-05 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 장치 |
| KR100568866B1 (ko) * | 2004-02-09 | 2006-04-10 | 삼성전자주식회사 | 강유전체 메모리에서 기준전압 발생장치 및 그에 따른구동방법 |
| JP4079910B2 (ja) * | 2004-05-28 | 2008-04-23 | 富士通株式会社 | 強誘電体メモリ |
-
2005
- 2005-07-06 JP JP2005197945A patent/JP4295253B2/ja not_active Expired - Lifetime
- 2005-10-20 TW TW094136689A patent/TWI298161B/zh not_active IP Right Cessation
- 2005-10-26 US US11/258,227 patent/US7200029B2/en not_active Expired - Lifetime
- 2005-11-16 KR KR1020050109604A patent/KR100756612B1/ko not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI861483B (zh) * | 2019-09-13 | 2024-11-11 | 日商鎧俠股份有限公司 | 半導體記憶裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100756612B1 (ko) | 2007-09-10 |
| JP2007018585A (ja) | 2007-01-25 |
| KR20070005445A (ko) | 2007-01-10 |
| TW200703329A (en) | 2007-01-16 |
| JP4295253B2 (ja) | 2009-07-15 |
| US20070008766A1 (en) | 2007-01-11 |
| US7200029B2 (en) | 2007-04-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |