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TWI297169B - Field emission illumination light source and method for making the same - Google Patents

Field emission illumination light source and method for making the same Download PDF

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Publication number
TWI297169B
TWI297169B TW95111401A TW95111401A TWI297169B TW I297169 B TWI297169 B TW I297169B TW 95111401 A TW95111401 A TW 95111401A TW 95111401 A TW95111401 A TW 95111401A TW I297169 B TWI297169 B TW I297169B
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Taiwan
Prior art keywords
field emission
illumination source
glass
anode
emission illumination
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TW95111401A
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Chinese (zh)
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TW200737283A (en
Inventor
Li Qian
Liang Liu
Peng Liu
Jie Tang
Yang Wei
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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Priority to TW95111401A priority Critical patent/TWI297169B/en
Publication of TW200737283A publication Critical patent/TW200737283A/en
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Publication of TWI297169B publication Critical patent/TWI297169B/en

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Description

1297169 • 九、發明說明: 【發明所屬之技術領域】 本發明係涉及一種場發射照明光源及其製造方 法,尤其涉及一種藉由吸氣劑有效地保持其内部具有正 常工作下所需真空度之場發射照明光源及其製造方法。 【先前技術】 按,習知照明用光源多為白熾燈或螢光管。白熾燈 歷史悠久,製作工藝簡單,惟其消耗之電能大部分轉化 爲熱能浪費掉,而未直接用於發光,故其最大缺點係發 光效率低下。普通螢光管包括一透明玻璃管,其内壁塗 覆有白色或彩色螢光材料,玻璃管内亦充有汞蒸汽。該 普通螢光管之原理係利用熱陰極發射之電子激發汞蒸 汽發出紫外光,而紫外光照射在螢光材料上發出白色光1297169 • IX. Description of the Invention: [Technical Field] The present invention relates to a field emission illumination source and a method of fabricating the same, and more particularly to a method for effectively maintaining the vacuum required for normal operation in the interior thereof by a getter Field emission illumination source and method of manufacturing the same. [Prior Art] According to the conventional illumination source, the illumination source is mostly an incandescent lamp or a fluorescent tube. Incandescent lamps have a long history and simple manufacturing process. However, most of the energy consumed is converted into heat energy, which is not directly used for illuminating, so its biggest drawback is the low luminous efficiency. A conventional fluorescent tube includes a transparent glass tube whose inner wall is coated with a white or colored fluorescent material, and the glass tube is also filled with mercury vapor. The principle of the ordinary fluorescent tube is that the electrons emitted by the hot cathode excite the mercury vapor to emit ultraviolet light, and the ultraviolet light emits white light on the fluorescent material.

或彩色光。該螢光管係一種熱陰極光源,發光效率比白 熾燈高。惟,螢光燈内使用之汞蒸汽有毒,當螢光燈管 被打破之後,汞蒸汽流出外面將對環境及人體有害。 爲解決上述問題,一種場發射照明光源被提供,其 t括陰極及與陰極對應設置之陽極。該陰極表面設有電 發射層,陽極與電子發射層對應設置有螢光層。當於 j與陽極之間施加—定電_,陰極 發 登光層於電子的在擊下發 害、。惟發光效率較高,對環境及人體無危 作所⑽====== 1297169 有兩種類型,即蒸散式及集中非蒸散式。 —以對於蒸散式吸氣劑,係於場發射照明光源内部設置 平面結構以藉由預先之蒸散過程形成吸氣劑層。惟該 吸氣劑會增加製造成本,亦可能引起電極引線間短路或 漏電,導致光源失效。對於集中非蒸散式吸氣劑,其係 集中設置於場發射照明光源之安裝頭部。惟其於場發射 照明光源内部靠近吸氣劑之位置真空度較好,而在遠離 吸氣劑之位置真空度較差,故而影響場發射照明光源之 玉常工作。Or colored light. The fluorescent tube is a hot cathode light source with higher luminous efficiency than incandescent lamps. However, the mercury vapor used in the fluorescent lamp is toxic. When the fluorescent tube is broken, the mercury vapor flowing out will be harmful to the environment and the human body. In order to solve the above problems, a field emission illumination source is provided which includes a cathode and an anode disposed corresponding to the cathode. The cathode surface is provided with an electroluminescent layer, and the anode and the electron-emitting layer are provided with a phosphor layer. When a constant electricity is applied between j and the anode, the cathode emits a layer of light that is damaged by the electrons. However, the luminous efficiency is high, and there is no danger to the environment and the human body. (10) ====== 1297169 There are two types, namely, evapotranspiration and concentrated non-evaporable. - In the case of an evaporable getter, a planar structure is placed inside the field emission illumination source to form a getter layer by a pre-evaporation process. However, the getter may increase the manufacturing cost, and may also cause a short circuit or electric leakage between the electrode leads, resulting in failure of the light source. For concentrated non-evaporable getters, they are placed centrally on the mounting head of the field emission illumination source. However, the vacuum inside the field emission light source is close to the getter, and the vacuum is poor at the position away from the getter, thus affecting the field emission illumination source.

有鑒於此,確有必要提供—種場發射照明光源,能 有效地維持其内部具有正常工作下所需之真空度。 【發明内容】 以下將藉由實施例說明一種場發射照明光源及其 製造方法,該場發射照明光源可有效地維持其内部具有 正常工作下所需之真空度從而確保其良好之工作品質。 一種場發射照明光源,係包括一密封之透明玻璃外 殼、形成於玻璃外殼内壁上之陽極、與玻璃外殼一端固 定連接之㈣以及陰極。該陽極包括形成於玻璃外殼内 壁上之陽極導,層、形成於陽極導電層上之螢光層以及 陽極電極。該陽極電極一端與陽極導電層連通,另一端 與燈頭相連通。該陰極係包括與燈頭相連通且與陽極電 極絕緣之陰極電極以及固定於陰極電極遠離燈頭一端 之電子發射體。其中’該電子發射體包括金屬導電體及 形成於金屬導電體表面之電子發射層。該電子發射層含 有吸氣劑微粒、奈㈣料、導電金屬微粒以及玻璃。 -種場發㈣明光源之製造方法,财法係包括以 下步驟: 提供吸氣舰粒、導電金屬微粒、朗微粒及奈米 1297169 材料、具有陽極導電層及螢光層之玻璃外殼、陽極電 極、陰極電極、金屬導電體以及燈頭; 將吸氣劑微粒、導電金屬微粒、玻璃微粒以及奈米 材料於有機載體中進行充分混合形成漿料; 將上述漿料塗敷於金屬導電體表面; 將塗敷有漿料之金屬導電體於300〜600 °C下進行烘 乾與焙燒從而於金屬導電體表面上形成電子發射層以 得到電子發射體;In view of this, it is indeed necessary to provide a field emission illumination source that effectively maintains the vacuum required for normal operation inside. SUMMARY OF THE INVENTION A field emission illumination source and a method of fabricating the same will be described below by way of example, which can effectively maintain the vacuum required for normal operation inside it to ensure its good working quality. A field emission illumination source comprising a sealed transparent glass envelope, an anode formed on the inner wall of the glass envelope, a fixed connection to one end of the glass envelope, and a cathode. The anode includes an anode lead formed on the inner wall of the glass envelope, a layer, a phosphor layer formed on the anode conductive layer, and an anode electrode. One end of the anode electrode is in communication with the anode conductive layer, and the other end is in communication with the lamp cap. The cathode system includes a cathode electrode in communication with the lamp cap and insulated from the anode electrode, and an electron emitter fixed to the cathode electrode at one end away from the lamp cap. Wherein the electron emitter comprises a metal conductor and an electron emission layer formed on a surface of the metal conductor. The electron emission layer contains getter particles, naphthalene, conductive metal particles, and glass. - Seed production (four) Ming light source manufacturing method, the financial system includes the following steps: Provide suction ship particles, conductive metal particles, Lang particles and nano 1297169 material, glass shell with anode conductive layer and fluorescent layer, anode electrode a cathode electrode, a metal conductor, and a lamp cap; the getter particles, the conductive metal particles, the glass particles, and the nano material are thoroughly mixed in an organic carrier to form a slurry; and the slurry is applied to the surface of the metal conductor; The metal conductor coated with the slurry is dried and calcined at 300 to 600 ° C to form an electron emission layer on the surface of the metal conductor to obtain an electron emitter;

組裝玻璃外殼、陽極電極、陰極電極及電子發射 體,於玻璃外殼之頸部開口處加上密封材料,一併加熱 至400〜500°C,密封材料熔融從而固定陽極電極、陰極 電極及電子發射體並於玻璃外殼内部形成密封空間,將 燈頭組裝於玻璃外殼之頸部並使其分別與陽極電極及 陰極電極相連從而得到場發射照明光源。 上述之場發射照明光源中吸氣劑微粒係分散於陰 極電子發射層中,其可有效地吸收螢光層發出之氣體或 由於其他各種原因進入場發射照明光源内部之氣體,從 而保持場發射照明光源内部具有良好之真空度進而提 高其使用品質。 【實施方式】 以下將結合附圖詳細說明本實施例場發射照明光 源10之結構以及其製造方法。 請參閱圖1,本實施例場發射照明光源10係包括一 透明玻璃外殼20、形成於玻璃外殼20内壁上之陽極 30、與玻璃外殼一端固定連接之燈頭40及陰極50。 玻璃外殼20係包括一頭部22以及從頭部22延伸 形成並具有開口之頸部24。該頸部24之底端開口處由 密封材料密封從而於玻璃外殼20内形成一密封空間。 1297169 、橢球形、水滴 之頭部22係圓 ,部22之形狀可根據需要製成圓球形 ^或其他城,圖1中所示玻璃外殼20 深形。The glass casing, the anode electrode, the cathode electrode and the electron emitter are assembled, and a sealing material is added to the opening of the neck of the glass casing, and is heated to 400 to 500 ° C, and the sealing material is melted to fix the anode electrode, the cathode electrode and the electron emission. The body forms a sealed space inside the glass casing, and the lamp cap is assembled to the neck of the glass casing and connected to the anode electrode and the cathode electrode respectively to obtain a field emission illumination source. The getter particles in the field emission illumination source are dispersed in the cathode electron emission layer, which can effectively absorb the gas emitted from the phosphor layer or enter the gas inside the field emission illumination source for various other reasons, thereby maintaining the field emission illumination. The inside of the light source has a good vacuum to improve its quality of use. [Embodiment] Hereinafter, a structure of a field emission illumination light source 10 of the present embodiment and a method of manufacturing the same will be described in detail with reference to the accompanying drawings. Referring to Fig. 1, the field emission illumination source 10 of the present embodiment comprises a transparent glass casing 20, an anode 30 formed on the inner wall of the glass casing 20, and a lamp cap 40 and a cathode 50 fixedly connected to one end of the glass casing. The glass casing 20 includes a head portion 22 and a neck portion 24 extending from the head portion 22 and having an opening. The bottom end opening of the neck portion 24 is sealed by a sealing material to form a sealed space in the glass casing 20. 1297169, ellipsoidal, water droplets of the head 22 is a circle, the shape of the portion 22 can be made into a spherical shape or other city as needed, the glass casing 20 shown in Figure 1 is deep.

燈頭40固定安裝於玻璃外殼2〇 ^成,如紹材料或不綱料。以4 ::場發f照明光源10安裝於燈座或其他Ξ二= 式:螺裝置上,其可根據實際需要製成卡扣 i紋他形式’圖1中所示之燈頭4°爲外 請配合參閱圖2,陽極30係包括陽極導電層32、 =置於陽極導電層32上之螢光層34以及與陽極曰導電層 ^連接導通之陽極電極36。該陽極導電層32覆蓋於玻 璃外豉20頭部22之内壁上並延伸至玻璃外殼2〇頸部 24之内壁,其係透明導電膜,優選地,採用透明氧化銦 錫,作爲陽極導電層32。該螢光層34可僅覆蓋於玻璃 外设20頭部22之内壁或既覆蓋頭部22之内壁亦覆蓋 頸部24之内壁。該螢光層34應選用高光電轉換效率、 低應用電壓及長餘輝的螢光層,螢光層34之螢光物質 根據實際需要可選用白色螢光物質或彩色螢光物質。可 選擇地,該螢光層34表面可設置一鋁膜(圖中未顯示), 其可防止螢光物質過早老化,亦可提高光源亮度。陽極 電極36包括一設置於陽極導電層32上之陽極引線環 360、陽極引線柱362以及兩根陽極連接引線364。該陽 極引線環360設置於玻璃外殼20頸部24之内壁靠近陽 極導電層32邊緣之位置。該陽極引線柱362與玻璃外 殼頸部24之内壁平行設置,且藉由玻璃外殼20之 密封材料被固定。該陽極引線柱362設置於玻璃外殼20 内部之端部,其一端藉由一陽極連接引線364與陽極引The lamp cap 40 is fixedly mounted on the glass casing 2, such as materials or materials. The light source 10 is mounted on a lamp holder or other Ξ2= type: screw device, which can be made into a buckle i-shaped form according to actual needs. The lamp head shown in Fig. 1 is 4° outside. Referring to FIG. 2, the anode 30 includes an anode conductive layer 32, a phosphor layer 34 disposed on the anode conductive layer 32, and an anode electrode 36 connected to the anode anode conductive layer. The anode conductive layer 32 covers the inner wall of the head 22 of the glass outer casing 20 and extends to the inner wall of the glass casing 2, the neck portion 24, which is a transparent conductive film. Preferably, transparent indium tin oxide is used as the anode conductive layer 32. . The phosphor layer 34 may cover only the inner wall of the head 22 of the glass peripheral 20 or both the inner wall of the head 22 and the inner wall of the neck 24. The phosphor layer 34 should be a phosphor layer with high photoelectric conversion efficiency, low application voltage and long afterglow. The phosphor of the phosphor layer 34 can be white phosphor or color phosphor according to actual needs. Optionally, an aluminum film (not shown) may be disposed on the surface of the phosphor layer 34 to prevent premature aging of the phosphor material and to increase the brightness of the light source. The anode electrode 36 includes an anode lead ring 360 disposed on the anode conductive layer 32, an anode lead post 362, and two anode connection leads 364. The anode lead ring 360 is disposed at an inner wall of the neck portion 24 of the glass envelope 20 near the edge of the anode conductive layer 32. The anode lead post 362 is disposed in parallel with the inner wall of the glass casing neck portion 24, and is fixed by the sealing material of the glass envelope 20. The anode lead post 362 is disposed at the inner end of the glass casing 20, and one end thereof is connected to the anode by an anode connecting lead 364.

10 1297169 線環360連接導通,另一端由玻璃外殼20密封之末端 向外延伸並藉由另一陽極連接引線364與燈頭40連接 導通。該陽極引線環360、陽極引線柱362和陽極連接 引線364均由導電材料製成,如銅。其中,陽極電極36 設置之目的在於提供燈頭40與陽極導電層32間電連 接,故而其結構可採用其他形式,如陽極電極36僅爲 一兩端分別連接陽極導電層及燈頭之導電絲或導電柱 (圖中未顯示),或者陽極電極36包括一陽極引線環10 1297169 The wire loop 360 is electrically connected, and the other end is extended outward by the sealed end of the glass casing 20 and is connected to the base 40 by another anode connecting lead 364. The anode lead ring 360, the anode lead post 362 and the anode connecting lead 364 are each made of a conductive material such as copper. The anode electrode 36 is disposed for the purpose of providing electrical connection between the lamp cap 40 and the anode conductive layer 32. Therefore, the structure of the anode electrode 36 can be other forms. For example, the anode electrode 36 is only connected to the anode conductive layer and the conductive wire or the conductive material of the lamp cap. a column (not shown), or the anode electrode 36 includes an anode lead ring

以及與陽極引線環及燈頭分別連接導通之導電柱或導 電絲。 陰極50設置於玻璃外殼2〇及燈頭4〇之内,係包 括一電子發射體52及陰極電極54。該陰極電極54包括 一電極頭部540、一連接電極頭部54〇與電子發射體52 之陰極連接引線542 ,以及中空且内部收容有陰極連接 引^542之玻璃支柱544。該電極頭部54〇設置於燈頭 40遠離玻璃外殼20之頂部,其與陰極連接引線542均 由導電材料製成。該玻璃支柱之一端支撐電子發射 體52並使之固定,另一端被玻璃外殼20之密封材料固 定。請參閱® 3,該電子發射體52係包括金屬導電體 520以及形成於金屬導電體52〇表面之電子發射屛 522。該金屬導電體52Q自導電金屬或其合金製成,^ 選地,金屬導電體520由銀製成。金屬導電體52〇之 狀應與玻璃外㉟2G之頭冑22相對貞,其 = 作爲準。圖丨及圖3中顯示之金屬匕 陰極電極54之結構亦可採用其他形式,如由 電柱(圖中未顯示)代替玻璃支柱544及陰極連接引^ 542連接電子發射體52及電極頭部刚,即陰極 11 1297169 包括一設置於燈頭40上之電極頭部540以及一支撐電 子發射體52並使之與電極頭部540相連之導電柱。該 導電柱可藉由玻璃外殼20上之密封材料被固定或直接 與電極頭部540固定,該電子發射體52可焊接固定於 導電柱之端部,亦可直接與導電柱設置爲一體成型之結 構。And a conductive post or a conductive wire connected to the anode lead ring and the lamp cap respectively. The cathode 50 is disposed within the glass envelope 2 and the base 4, and includes an electron emitter 52 and a cathode electrode 54. The cathode electrode 54 includes an electrode tip 540, a cathode connection lead 542 connecting the electrode tip 54 and the electron emitter 52, and a glass post 544 which is hollow and internally houses the cathode connection 542. The electrode tip 54 is disposed on the top of the base 40 away from the glass envelope 20, and the cathode connection leads 542 are each made of a conductive material. One end of the glass post supports the electron emitter 52 and is fixed, and the other end is fixed by the sealing material of the glass casing 20. Referring to ® 3, the electron emitter 52 includes a metal conductor 520 and an electron emission 522 522 formed on the surface of the metal conductor 52. The metal conductor 52Q is made of a conductive metal or an alloy thereof. Alternatively, the metal conductor 520 is made of silver. The metal conductor 52〇 should be opposite to the head 胄22 of the outer glass 352G, which is as standard. The structure of the metal ruthenium cathode electrode 54 shown in FIG. 3 and FIG. 3 can also be in other forms, such as replacing the glass pillar 544 and the cathode connection 542 with an electric column (not shown) to connect the electron emitter 52 and the electrode tip. That is, the cathode 11 1297169 includes an electrode head 540 disposed on the base 40 and a conductive post supporting the electron emitter 52 and connecting it to the electrode head 540. The conductive pillar can be fixed by the sealing material on the glass casing 20 or directly fixed to the electrode head 540. The electron emitter 52 can be welded and fixed to the end of the conductive pillar, or can be directly formed integrally with the conductive pillar. structure.

請參閱圖4,電子發射層522係包含有奈米材料 530、玻璃532、導電金屬微粒534以及吸氣劑微粒536。 其中,該吸氣劑微粒536採用非蒸散型吸氣劑材料,直 徑爲1〜10微米。非蒸散型吸氣劑係靠表面吸著或體擴 散吸氣,以欽、錯、給、趾、稀土金屬或者其合金等成 分爲主,如鍅鋁合金、電子漿料級鈦粉、锆釩鐵。該導 電金屬微粒534選用銀或氧化銦錫,其可確保奈米材料 530與金屬導電體520間電性連接,優選地,導電金屬 微粒534由銀製成。該奈米材料530包括能夠用於場發 射之碳奈米管或其他材料之奈米管、奈米線、奈米棒或 奈米級微粒,其長度爲5〜15微米,直徑爲1〜100奈米。 優選地,該奈米材料530至少一端露出電子發射層522 之表面。 爲確保陽極電極36與陰極電極54之間絕緣,可進 一步於頭部40上設置絕緣介質42,該絕緣介質42係設 置於陰極電極54之電極頭部540及陽極電極36與燈頭 40相連之陽極引線364之間。該絕緣介質42爲絕緣材 料製成,如玻璃或陶瓷。 使用時,電子發射層522於電場作用下發射電子, 電子撞擊陽極30螢光層34,當螢光層34採用彩色螢光 物質時,會發出彩色光,當螢光層34採用白色螢光物 質時,會發出白色光。此過程中,吸氣劑微粒536由於 12 1297169 Γ=Γί發射層522之内,其可有效地吸收螢光 1Π或由於其他各縣目進人場發射昭明 從而保持場發射朗光源 發;m造上料發射照明光 步驟(一),提供一定量吸氣劑微粒 =534破璃微粒及奈米材請、形成有= 螢光層34之玻璃外殼20、陽極電極36、陰 極電極54、金屬導電體52〇以及燈頭4〇 ; 吸氣劑微粒536及導電金屬微粒534可預先 f機分別球磨,使吸氣劑微粒536直徑爲1〜1G微米, 導電金屬微粒534直徑爲〇.卜1()微米。優選地,選用 激發溫度為300〜500。(:之吸㈣,如純合金吸氣劑。 ^璃微粒選用低熔點玻璃,其主要材料爲四氧化矽 (Si〇4),直徑爲1〇〜1〇〇奈米,熔點爲35〇 6〇〇γ。奈米 材,530可預先藉由化學氣相沈積法、電弧放電法或鐳 射蒸發法等習知技術製備,其長度爲5〜15微米過短 易減弱奈米材料之場發射特性,過長易使奈米材料53〇 相互缠繞結團。 玻璃外殼20包括頭部22以及帶有開口之頸部24, 其内壁先藉由蒸鍍或其他手段形成陽極導電層32,後藉 由沈積或其他手段於陽極導電層32上形成螢光層34。曰 該陽極導電層32覆蓋至玻璃外殼20之頸部24,而螢光 層34可僅覆蓋於玻璃外殼2〇之頭部22或既覆蓋頭部 22亦覆蓋頸部24。 " 步驟(二),將吸氣劑微粒536、導電金屬微粒534、 玻璃微粒及奈米材料530於有機載體中進行充分混合形 13 1297169 , 成漿料; 有機載體係由作爲溶劑之松油醇、作爲增塑劑之少 • *鄰位苯二曱二丁醋以及作爲穩定劑之少量乙基纖維 , 素形成之混合劑。漿料中吸氣劑微粒536之質量百分比 濃度40〜80°/。,混合過程優選爲6〇〜8(rc混合3 5小時。 爲了更好分散奈米材料並得到奈米材料直徑均勻之漿 料,可進一步使用低功率之超聲波對含有奈米材料之 機溶劑進行超聲波震蕩,然後再對其進行離心處理。 步驟(三),將上述漿料塗敷於金屬導電體52〇 _ 面; 塗敷過程應於潔淨環境内進行,優選地,塗敷環产 之灰塵度應小於1000/m3。 ^ ^ 步驟(四),將塗敷有漿料之金屬導電體52〇於 300〜600°C下進行烘乾與焙燒從而於金屬導電體52〇表 面上形成電子發射層522以得到電子發射體52 ; 烘乾與焙燒通常於真空環境下進行或者於烘乾與 焙燒過程中通入惰性氣體加以保護防止烘乾與焙燒^ 發生氧化反應亦防止吸氣劑飽和。烘乾之目的在於^有 機載體從金屬導電體520上揮發。焙燒之目的在於使玻 璃微粒熔融從而將吸氣劑微粒536、導電金屬微粒534 以及奈米材料530粘結於金屬導電體520之上形成電子 發射層522。另,熔融玻璃532可調節整體之熱膨脹 數防止所形成之電子發射層522産生裂紋或發y 爲進一步增強電子發射層522之場發射特性,致 乾與培燒過程之後,可對電子發射體52之表面進二供 擦,部分奈米材料530之末端於摩擦後會露出雷=摩 層522表面。 卞發射 步驟(五),組裝玻璃外殼20、陽極電極3 1 、陰 1297169 極電極54及電子發射體52,於玻璃外殼20之頸部24 開口處加上密封材料,一併加熱至400〜500°C,密封材 料熔融從而固定陽極電極36、陰極電極54及電子發射 體52並於玻璃外殼20内部形成密封空間,將燈頭4〇 組裝於玻璃外殼20之頤部24並使之與陽極電極36及 陰極電極54相連從而得到場發射照明光源1〇。Referring to FIG. 4, the electron emission layer 522 includes a nano material 530, a glass 532, conductive metal particles 534, and getter particles 536. The getter particles 536 are made of a non-evaporable getter material having a diameter of 1 to 10 μm. Non-evaporable getter is based on surface adsorption or bulk diffusion, mainly composed of Qin, wrong, toe, toe, rare earth metals or alloys thereof, such as bismuth aluminum alloy, electronic slurry grade titanium powder, zirconium vanadium iron. The conductive metal particles 534 are made of silver or indium tin oxide, which ensures electrical connection between the nano material 530 and the metal conductor 520. Preferably, the conductive metal particles 534 are made of silver. The nanomaterial 530 comprises a carbon nanotube or other material capable of being used for field emission, a nanotube, a nanowire, a nanorod or a nanoparticle, and has a length of 5 to 15 micrometers and a diameter of 1 to 100. Nano. Preferably, at least one end of the nanomaterial 530 is exposed on the surface of the electron emission layer 522. In order to ensure insulation between the anode electrode 36 and the cathode electrode 54, an insulating medium 42 may be further disposed on the head 40. The insulating medium 42 is disposed on the electrode head 540 of the cathode electrode 54 and the anode connected to the base 40 of the anode electrode 36. Between the leads 364. The insulating medium 42 is made of an insulating material such as glass or ceramic. In use, the electron emission layer 522 emits electrons under the action of an electric field, and the electrons strike the fluorescent layer 34 of the anode 30. When the fluorescent layer 34 is colored fluorescent material, color light is emitted, and when the fluorescent layer 34 is white fluorescent material. When it is white, it will emit white light. In this process, the getter particles 536 can effectively absorb the fluorescence 1 由于 due to the 12 1297169 Γ=Γί emission layer 522 or the field emission of the other fields. The step of emitting the illumination light (1), providing a certain amount of getter particles = 534 broken glass particles and nano-materials, forming a glass shell 20 with a fluorescent layer 34, an anode electrode 36, a cathode electrode 54, and a metal conductive The body 52 〇 and the lamp holder 4 〇; the getter particles 536 and the conductive metal particles 534 can be ball-milled in advance, so that the getter particles 536 have a diameter of 1 to 1 Gm, and the conductive metal particles 534 have a diameter of 〇. Micron. Preferably, the excitation temperature is selected from 300 to 500. (: suction (four), such as pure alloy getter. · Glass particles are selected from low melting point glass, the main material is osmium tetroxide (Si〇4), the diameter is 1〇~1〇〇N, the melting point is 35〇6 〇〇γ. Nanomaterials, 530 can be prepared by conventional techniques such as chemical vapor deposition, arc discharge or laser evaporation. The length of 5~15 microns is too short to weaken the field emission characteristics of nanomaterials. If the length is too long, the nano-materials 53 are intertwined and agglomerated. The glass casing 20 includes a head portion 22 and a neck portion 24 having an opening, and the inner wall thereof is first formed by evaporation or other means to form the anode conductive layer 32, and then borrowed A phosphor layer 34 is formed on the anode conductive layer 32 by deposition or other means. The anode conductive layer 32 covers the neck portion 24 of the glass envelope 20, and the phosphor layer 34 may cover only the head portion 22 of the glass envelope 2 Or covering both the head portion 22 and the neck portion 24. " Step (2), the getter particles 536, the conductive metal particles 534, the glass particles and the nano-material 530 are thoroughly mixed in the organic carrier 13 1297169 Slurry; organic carrier is derived from terpineol as a solvent a small amount of agent * * ortho-benzoic acid dibutyl vinegar and a small amount of ethyl cellulose as a stabilizer, a mixture of the elements. The mass percentage of the getter particles 536 in the slurry is 40 to 80 ° /., the mixing process Preferably, it is 6〇~8 (rc mixed for 35 hours. In order to better disperse the nano material and obtain a slurry having a uniform diameter of the nano material, ultrasonic vibration of the organic solvent containing the nano material can be further performed using low-power ultrasonic waves, Then, it is centrifuged. Step (3), the slurry is applied to the surface of the metal conductor 52; the coating process should be carried out in a clean environment, preferably, the dust produced by the coating ring should be less than 1000/m3. ^ ^ Step (4), the metal conductor 52 coated with the slurry is dried and fired at 300 to 600 ° C to form an electron emission layer 522 on the surface of the metal conductor 52. The electron emitter 52 is obtained; drying and baking are usually carried out in a vacuum environment or by introducing an inert gas during drying and baking to prevent drying and baking. Oxidation reaction is also prevented. The getter is prevented from being saturated. The organic carrier is volatilized from the metal conductor 520. The purpose of the firing is to melt the glass particles to bond the getter particles 536, the conductive metal particles 534, and the nano-material 530 to the metal conductor 520 to form an electron-emitting layer. 522. In addition, the molten glass 532 can adjust the overall thermal expansion number to prevent the formed electron-emitting layer 522 from being cracked or y to further enhance the field emission characteristics of the electron-emitting layer 522. After the drying and firing process, the electron emission can be performed. The surface of the body 52 is rubbed, and the end of the portion of the nano-material 530 is exposed to the surface of the lightning layer 522. The emission step (5), assembling the glass casing 20, the anode electrode 3 1 and the cathode 1297169 electrode 54 And the electron emitter 52 is provided with a sealing material at the opening of the neck portion 24 of the glass casing 20, and is heated to 400 to 500 ° C, and the sealing material is melted to fix the anode electrode 36, the cathode electrode 54 and the electron emitter 52. A sealed space is formed inside the glass casing 20, and the base 4 is assembled to the flange portion 24 of the glass casing 20 and connected to the anode electrode 36 and the cathode electrode 54 to obtain a field emission. 1〇 illumination source.

加熱過程通常於真空環境下進行或者於加熱過程 中通入惰性氣體加以保護。加熱過程中,吸氣劑微粒536 被激發。通常情況,密封材料可選用習知密封材料,如 選用溶點為350〜600 C之低熔點玻璃粉作爲密封材料。 由於玻璃粉微粒直徑較小,其實際熔點低於6〇〇°c。當 加熱至400〜500°C時,玻璃粉熔融,冷卻後,熔融之破 璃凝固從而將陽極電極36、陰極電極54及電子發射體 52固定於玻璃外殼20内部並於玻璃外殼2〇内部形成二 密封空間。 綜上所述,本發明確已符合發明專利要件,爰依法 提出專利申請。惟,以上所述者僅為本發明之較佳實施 例,舉凡熟悉本案技藝之人士,於援依本案發明精神所 作之等效修飾或變化,皆應包含於以下之申請專利範 之内。 【圖式簡單說明】 圖1係本發明實施例場發射照明光源之剖視示青 圖。 圖2係圖1中II部分之放大圖。 圖3係圖1場發射照明光源沿ΙΠ_ΙΠ方向之剖視 圖。 圖4係圖3中IV部分之放大圖。 圖5係本發明實施例場發射照明光源製造方法之步 15 1297169 驟示意圖。 【主要元件符號說明】The heating process is usually carried out under vacuum or by applying an inert gas during the heating process. The getter particles 536 are excited during the heating. Generally, the sealing material may be a conventional sealing material, such as a low melting point glass powder having a melting point of 350 to 600 C as a sealing material. Since the glass powder particles have a small diameter, the actual melting point is lower than 6 ° C. When heated to 400 to 500 ° C, the glass frit is melted, and after cooling, the molten glass solidifies to fix the anode electrode 36, the cathode electrode 54 and the electron emitter 52 to the inside of the glass envelope 20 and form inside the glass envelope 2 Two sealed spaces. In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and those skilled in the art will be able to include the equivalent modifications or variations of the invention in the spirit of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a field emission illumination source in accordance with an embodiment of the present invention. Figure 2 is an enlarged view of a portion II of Figure 1. Figure 3 is a cross-sectional view of the field emission illumination source of Figure 1 taken along the ΙΠ_ΙΠ direction. Figure 4 is an enlarged view of a portion IV of Figure 3. FIG. 5 is a schematic diagram of a method for manufacturing a field emission illumination source according to an embodiment of the present invention. [Main component symbol description]

場發射照明光源 10 玻璃外殼 20 頭部 22 頸部 24 陽極 30 陽極導電層 32 螢光層 34 陽極電極 36 陽極引線環 360 陽極引線柱 362 陽極連接引線 364 燈頭 40 絕緣介質 42 陰極 50 電子發射體 52 金屬導電體 520 電子發射層 522 奈米材料 530 玻璃 532 導電金屬微粒 534 吸氣劑微粒 536 陰極電極 54 電極頭部 540 陰極連接引線 542 玻璃支柱 544Field emission illumination source 10 Glass housing 20 Head 22 Neck 24 Anode 30 Anode conductive layer 32 Fluorescent layer 34 Anode electrode 36 Anode lead ring 360 Anode lead post 362 Anode connection lead 364 Lamp cap 40 Insulating medium 42 Cathode 50 Electron emitter 52 Metal Conductor 520 Electron Emission Layer 522 Nano Material 530 Glass 532 Conductive Metal Particles 534 Getter Particles 536 Cathode Electrode 54 Electrode Head 540 Cathode Connection Lead 542 Glass Post 544

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Claims (1)

1297169 十、申請專利範圍 1. 一種場發射照明光源,包括: 密封之玻璃外殼,係包括頭部以及從頭部延伸形成 並具有開口之頸部; 固定於玻璃外殼頸部之燈頭; 形成於玻璃外殼内壁上之陽極,係包括形成於玻璃 外殼内壁上之陽極導電層、形成於陽極導電層上榮光層 以及連接陽極導電層與燈頭之陽極電極;以及1297169 X. Patent application scope 1. A field emission illumination source comprising: a sealed glass casing comprising a head and a neck extending from the head and having an opening; a lamp cap fixed to the neck of the glass casing; formed in the glass casing The anode on the inner wall comprises an anode conductive layer formed on the inner wall of the glass envelope, a glory layer formed on the anode conductive layer, and an anode electrode connecting the anode conductive layer and the lamp cap; 安裝於玻璃外殼與燈頭内之陰極,係包括陰極電極 及固定於陰極電極一端之電子發射體,該陰極電極與陽 極電極間相互絕緣且電性連接電子發射體與燈頭,該電 子發射體包括金屬導電體及形成於金屬導電體表面之 電子發射層,該電子發射層含有吸氣劑微粒、奈米材 料、導電金屬微粒及玻璃。 2. 如申請專利範圍第1項所述之場發射照明光源,其 中,該吸氣劑微粒係非蒸散型吸氣劑。 3. 如申請專利範圍第2項所述之場發射照明光源,其 中,該吸氣劑微粒直徑爲1〜10微米。 4. 如申請專利範圍第3項所述之場發射照明光源,其 中,該奈米材料之長度爲5〜15微米,直徑爲1〜100奈 米。 5. 如申請專利範圍第3項所述之場發射照明光源,其 中,該陽極導電層爲氧化銦錫膜。 6. 如申請專利範圍第3項所述之場發射照明光源,其 中,該陽極亦包括一鋁膜,該鋁膜設置於螢光層外表面。 7. 如申請專利範圍第3項所述之場發射照明光源,其 中,該導電金屬微粒選用銀或氧化銦錫,其直徑爲 0. 1〜10微米。 17 1297169 ^如申印專利範圍第3項所述之場發射照明光源,其 ' ’該陰極電極包括設置於燈頭上之電極頭部、連接電 極碩部與電子發射體之陰極連接引 收容陰極連接引線之玻璃支柱。 内P 9·如申印專利範圍第3項所述之場發射照明光源,其 中,該陰極電極包括設置於燈頭上之電極頭部、連接&amp; 極頭部與電子發射體之導電柱。 10· 一種場發射照明光源之製造方法,包括以下步驟: (一) 提供吸氣劑微粒、導電金屬微粒、玻璃微粒及 || 奈米材料、具有陽極導電層及螢光層且具有開口之玻璃 外设㈤極電極、陰極電極、金屬導電體以及燈頭; (二) 將吸氣劑微粒、導電金屬微粒、玻璃微粒以及 奈米材料於有機載體中進行充分混合從而形成漿料; (三) 將上述漿料塗敷於金屬導電體表面; (四) 將塗敷有漿料之金屬導電體於3〇〇〜6〇〇〇c下進 行烘乾與培燒從而於金屬導電體表面上形成電子發射 層以得到電子發射體; (五) 組裝玻璃外殼、陽極電極、陰極電極、電子發 || 射體以及燈頭,並於玻璃外殼内部形成一密封空間,從 而得到場發射照明光源。 11·如申請專利範圍第ίο項所述場發射照明光源之製造 方法’其中,於步驟(一)中,該吸氣劑微粒係非蒸散 型吸氣劑,其激活溫度爲300〜500。0 12·如申請專利範圍第11項所述場發射照明光源之製造 方法’其中,於步驟(一)中,該玻璃微粒爲低熔點玻 璃微粒,其熔點在350〜600°C之間,微粒直徑爲1〇〜1 〇〇 奈米。 13·如申請專利範圍第12項所述場發射照明光源之製造 18 1297169 方法,其中,於步驟(一)中,該陽極導電層係藉由蒸 鍍方法形成於玻璃外殼内壁上,該螢光層藉由沈積方法 形成於陽極導電層上。 14. 如申請專利範圍第13項所述場發射照明光源之製造 方法,其中,於步驟(二)中,該有機載體係松油醇、 鄰位苯二甲二丁酯及乙基纖維素之混合劑。 15. 如申請專利範圍第14項所述場發射照明光源之製造 方法,其中,於步驟(二)中,該漿料中吸氣劑微粒之 濃度比例為40〜80%。The cathode mounted in the glass casing and the lamp cap comprises a cathode electrode and an electron emitter fixed at one end of the cathode electrode, the cathode electrode and the anode electrode are insulated from each other and electrically connected to the electron emitter and the lamp cap, and the electron emitter comprises a metal An electric conductor and an electron emission layer formed on a surface of the metal conductor, the electron emission layer containing getter particles, a nano material, conductive metal particles, and glass. 2. The field emission illumination source of claim 1, wherein the getter particles are non-evaporable getters. 3. The field emission illumination source of claim 2, wherein the getter particles have a diameter of 1 to 10 microns. 4. The field emission illumination source of claim 3, wherein the nanomaterial has a length of 5 to 15 microns and a diameter of 1 to 100 nm. 5. The field emission illumination source of claim 3, wherein the anode conductive layer is an indium tin oxide film. 6. The field emission illumination source of claim 3, wherein the anode further comprises an aluminum film disposed on an outer surface of the phosphor layer. 7〜10微米。 The conductive metal particles are selected from the silver or indium tin oxide, the diameter of which is 0. 1~10 microns. 17 1297169 ^ The field emission illumination source of claim 3, wherein the cathode electrode comprises an electrode head disposed on the lamp cap, and a connection between the connection electrode and the cathode of the electron emitter. The glass pillar of the lead. The field emission illumination source of claim 3, wherein the cathode electrode comprises an electrode head disposed on the base, and a conductive post connecting the pole head and the electron emitter. 10. A method of manufacturing a field emission illumination source, comprising the steps of: (1) providing getter particles, conductive metal particles, glass particles and || nano materials, glass having an anode conductive layer and a phosphor layer and having an opening Peripheral (5) pole electrode, cathode electrode, metal conductor and lamp cap; (2) thoroughly mixing getter particles, conductive metal particles, glass particles and nano materials in an organic carrier to form a slurry; The slurry is applied to the surface of the metal conductor; (4) the metal conductor coated with the slurry is dried and fired at 3 〇〇 to 6 〇〇〇c to form an electron on the surface of the metal conductor. The emission layer is used to obtain an electron emitter; (5) assembling a glass casing, an anode electrode, a cathode electrode, an electron emitter, a lamp body, and a lamp cap, and forming a sealed space inside the glass casing, thereby obtaining a field emission illumination source. 11. The method of manufacturing a field emission illumination source according to claim </ RTI> wherein, in the step (1), the getter particles are non-evaporable getters having an activation temperature of 300 to 500. 12. The method of manufacturing a field emission illumination source according to claim 11, wherein in the step (1), the glass particles are low melting glass particles having a melting point of between 350 and 600 ° C and a particle diameter. For 1〇~1 〇〇 nano. The method of manufacturing a field emission illumination source according to claim 12, wherein the anode conductive layer is formed on the inner wall of the glass casing by an evaporation method, and the phosphor is formed in the step (1). The layer is formed on the anode conductive layer by a deposition method. 14. The method for producing a field emission illumination source according to claim 13, wherein in the step (2), the organic carrier is terpineol, ortho-dibutylene dibutylate and ethyl cellulose. Mixture. 15. The method of manufacturing a field emission illumination source according to claim 14, wherein in the step (2), the concentration ratio of the getter particles in the slurry is 40 to 80%. 16. 如申請專利範圍第15項所述場發射照明光源之製造 方法,其中,於步驟(二)中,該混合過程係於60〜80°C 進行3〜5小時。 17. 如申請專利範圍第16項所述場發射照明光源之製造 方法,其中,於步驟(三)中,該塗敷過程係於灰塵度 小於1000/m3之環境中進行。 18. 如申請專利範圍第17項所述的場發射照明光源之製 造方法,其特徵在於:於步驟(四)中,所述的烘乾和 焙燒過程在真空或惰性氣體保護的情況下進行。 19. 如申請專利範圍第18項所述場發射照明光源之製造 方法,其中,實施步驟(五)之前,可預先對陰極之電 子發射層表面進行摩擦,部分奈米材料末端經摩擦後露 出電子發射層表面。 1916. The method of manufacturing a field emission illumination source according to claim 15, wherein in the step (2), the mixing process is carried out at 60 to 80 ° C for 3 to 5 hours. 17. The method of manufacturing a field emission illumination source according to claim 16, wherein in the step (3), the coating process is performed in an environment in which the degree of dust is less than 1000/m3. 18. The method of manufacturing a field emission illumination source according to claim 17, wherein in the step (4), the drying and roasting process is carried out under vacuum or inert gas protection. 19. The method of manufacturing a field emission illumination source according to claim 18, wherein before the step (5), the surface of the electron emission layer of the cathode is rubbed in advance, and the end of the portion of the nano material is exposed to expose the electron. Emissive layer surface. 19
TW95111401A 2006-03-31 2006-03-31 Field emission illumination light source and method for making the same TWI297169B (en)

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