1295512 1 » 九、發明說明： 【發明所屬之技術領域】 本發明有關-種影像感測器及其製法，特別是有關一種使 用感光二極體的互補式金氧半導體電晶體影像感測器及其製法。 【先前技術】 互補式金氧半導體電純影縣測II (CMOS image sensor j CIS)寺,載子偶δ裝置(charge c〇upied devices，CCDs)都是習知技 術中系用來將光轉換為電子訊號的光學電路元件，兩者的應用 範圍、自很廣泛，包括有掃描器、攝影機、以及照相機等等，但 f因為載子偶合裝置受限於價位高以及體積大的問題，所以目 刚市面上以互補式金氧半導體電晶體影像感測器較為普及。互 補式金氧半‘體電晶體景《像感測器，是以傳統的半導體製程製 1 ’因此可以大幅減少所需成本及元件尺寸，目前大致分為線 里面型兩種，而線型互補式金氧半導體電晶體影像感測器以 應用在掃猫器等產品為主，面型互補式金氧半導體電晶體影像 感測器則以應用在數位相機等產品為主。 •對於CMOS影像感測元件的性能而言，暗電流是重要指 希望不存在。暗電流與製造_發㈣淺賴隔離結構(sti) 局部石夕氧化(L0C0S))引起的缺陷、電聚缺陷、晶圓不純物 ^等有關。例如’ CMOS影像感測元件的感光二極體層於電装 刻製程期間易受損壞，因此產生暗電流。 1295512 美國專利第6,906,364號揭示一種CMOS影像感測元件的 結構以減少暗電流的產生，其包括一感光二極體感測區、一電 晶體區元件、一自對準區塊(self-aligned block)、及一保護層。 感光'一極體感測區及電晶體元件區係形成於基底中，自對準區 j 塊係形成於感光二極體感測區上。保護層形成於整個基底上， 覆蓋自對準區塊。如此感光二極體感測區可於後續之後段製程 中受到保護而免於損壞，以減少暗電流產生。然而，閘極係於 _ 保護層形成之前所形成，感光二極體感測區於使用電漿餘刻警 程形成閘極期間仍有受損的風險。 因此，仍需要一種具有更少量暗電流的影像感測元 件，及其製法。 【發明内容】 本發明的一目的係提供一種影像感測元件，其具有改善的 • 暗電流現象。 本發明的另一目的係提供一種製造影像感測元件的方法， 以製得具有改善的暗電流的影像感測元件。 依據本發明的影像感測元件包括一基底、一光感測區、— 介電保護層、一閘極絕緣層、一閘極、及一摻雜區。光感蜊區 • 是位於基底中。介電保護層是位於光感測區上，以做為光感測 1295512 2保㈣。閘極絕緣層是位於基底上，鄰接介電保護層。間 换疋位於閘極&緣層上，其—侧跨至介電保護層的—部分上。 杉雜區是位於基底中。 =據本發明的製造影像感測元件的方法包括下列步驟。首 ’提供一基底，其包括-光❹m於基底中。其次，形成一 包保制於光感漸上。織，形成—閘極絕緣層於基底上 ⑩雜接介電保護層。形成一閉極於間極絕緣層上並且使問極的 一侧延伸至介電保護層的—部分上。最後，分別於閘極的另一 側的基底中形成一摻雜區及於光感測區形成一感光層。 、於本發明的另-方面，依據本發明的製造影像感測元件的 匕括下列步驟。首先，提供一基底，其包括一光感測區於 基底中。、接著，形成-介電保護層於光感測區上。於光感測區 域感光層。然後，形成—閘極絕緣層於基底上並鄰接介電 馨=層。形成—閘極於閘極絕緣層上並且使閘極的-侧延伸至 ’I電保韻的—部分上。最後，於閘極的另—侧的基底中形成 一摻雜區。 於本發明的仍另一方面，依據本發明的製造影像感測元件 的方法包括下列步驟。首先，提供—基底，其包括—光感測區 及閘極區於基底中，其中閘極區係被光感測區圍繞。其次， 形成一介電保護層於光感測區上。於閘極區的基底中形成一摻 1295512 雜區。接著，形成―閘極絕緣層於閘極區的基底上並鄰接介電 層。形成—閘極於閘極絕緣層上並且使閘極的侧邊延伸至 •介電保護層的-部分上。最後，於光感測區中形成一感光層。 於本發明的又另-方面，依據本發明的製造影像感測元件 的村包括下列步驟。首先，提供一基底，其包括一光感測區 及閘極區於基底中，其中閘極區係被光感測區圍繞。其次， _ 形成W電保濩層於光感測區上。分別於光感測區中形成一感 光層及於閘極區的基底中形成一摻雜區。接著，形成一間極絕 緣層於閘極區的基底上並鄰接介電保護層。最後，形成一閉極 於閘極絕緣層上並且使閘極的侧邊延伸至介電保護層的一部分 上0 依據本發明的影像感測元件，係先於光感測區上形成一介 電保護層做為倾層，再於基底上形·極，尤其是所形成的 閘極的-側邊係跨至介電保護層的—部分上。因此，此介電保 護層可保護域砸的感光層，可減少就層於以電聚進行光 阻去除、閘極钕刻、及間隙壁_時所造成的損壞，而改善暗 電抓。此外，於本發明的另一具體實施例中，使閘極儘量不接 觸sti邊界而位於光感測區包圍的區域内，如此不會受到π】 誘發的缺陷的影響，可降低漏電流(即，暗電流）。再者，閑極 不接觸STI邊界時，則不會有STI窄寬度效應，就不會在間極 下方造成-遮障，*影響光感測區的電荷傳出。因此，依據本 1295512 發明的影像感測元件可具有良好的性能。 【實施方式】 請芩閱第1及2圖，第2圖是第1圖中沿著AA，線段的剖 •面圖。依據本發明的影像感測元件可為CMOS影像感測元件， 包括一基底20、一光感測區22、一介電保護層24、一閘極絕 緣層26 閘極28、及一摻雜區30。此影像感測元件以淺溝 鲁槽隔離結構21與其他元件隔離。依據本發明的影像感測元件亦 適用其他方式例如L〇c〇s的隔離。 基底20可為P型或η型半導體基底。光感測區22是位於 基底20中。光感測區22可包括一感光層％，為感光材料，例 如，當基底20為Ρ型基底時，感光層32可包括輕摻雜 層34及- p型重摻雜層36。服(p型l型)感光二極體、 APD感光二極體、或其他—般的感光二極體均可做為感光層， 籲 但不限於此。 介電保護層24是位於光感測區22，例如位於感光層32之 上，以做為光感測區22的保護層。介電保護層可為單層或多層 介電層。單層介電層可為例如氧化石夕層等介電材料層。多層^ 電層可為例如-層氧切層38及-層氮切層4q位於該氧化 矽層上’或是交替堆疊的複數層氧化石夕層及複數層氮化石夕層。 -介電保護層是做為保護光感測區以免於後續製程例如電漿製程 1295512 Γ二，，'，介電保護層的厚度可為不影響透光而可達保護功 此、旱又’較佳總厚度不大於肖1000Α 居 。一二：:介 層的保^配合適當厚度時，例如細至观，亦可具有抗反射 閘極絕緣層26是位於其& 極絕緣鄰接介電保護層24。閘 於_緣層:上：二度較佳小於謹。_是位 閘㈣包括導電性材;24的一部分上。 -步具有-間隙壁42 :間= 摻雜區30是位於間極28的 乳化石夕層，或多層介電層。 λ匕士、 、1極28的另一側的基底20中，以於電晶！#功 二=汲，源極。摻雜區可包括-部分輕摻雜區及-部分 =同其電性與感光二極體的輕推雜層™ 依據本發明的影像感測元件，一主 區的感光層具有-介轉，/、 、$在；光感測 區相互間的位置並心清制光感測區、閉極、及摻雜 底中，或有-部分位H’推雜區可位於閘極的另一侧的基 、閘極下方的基底中，形狀並無特別限制。 1295512 或者，閘極所在的區域可被光感測區圍繞，如第3圖顯示 依據本發明的影像感測元件的另-具體實施例，及第4圖顯示 於第3圖中沿著BB，線段的剖面圖。其中，閘極％是位於被光 感測區52包圍的區域的基底上並以其側邊跨於介電保護層54 的邛分上，及摻雜區60係部分位於閘極58下方的基底中。 介電保護層54包括氧化梦層68及氧化氮層7()位於感光層幻 上以做為感光層62的保護層。感光層62可包括輕摻雜層 # 64及重摻雜層66。閘極絕緣層56位於基底50上，鄰接介電保 4層54。閘極58位於閘極絕緣層56上，其侧邊跨至介電保護 層54的一部分上。摻雜區6〇是位於基底中，於閘極兄的 下方。摻雜區60可部分位於閘極58下方的基底5〇中，或可位 於閘極58的側邊基底50中而不位於閘極下方。使閘極位於被 光感测區包圍的區域的基底上的如此配置的優點是，使得問極 不會碰觸淺溝槽結構或LOCOS邊界，或是僅少許部分碰觸， 鲁所以不會受到STI誘發的缺陷的影響，可降低暗電流。再者， 閘極不接觸STI邊界時，則不會有奶窄寬度效應，而不會在 閘極下方造成一遮障影響光感測區的電荷傳出。 第5至8圖顯示依據本發明的影像感測元件的製造方法的 -具體實施例。請參閱第5圖’首先提供—基底2()，其中已製 備完成淺溝槽隔離結構’並且具有-光感測區(未示出）。可 藉由熱氧化法於基底表面形成氧化石夕層，及藉由電聚增強化學 •氣相沉積法使用魏與氨氣做為處理氣體，於氧化石夕層上形成 1295512 氮^化層，以去 以制〜夕 文為；丨電材料層。若需要，可重複此步驟若干次， 的:介電材料層。織，以微影製程形成具有對應圖案 行仙遮住對應於光感親的介電保護層預定區’以進 用=::!的介電材料層部分。⑽她刻，可利 用乾Γ如電漿侧。氧㈣層的侧，則可利 4〇的介電保^ ，界定出包括氧化石夕層38與氮化石夕層 除。 、θ 4復盍於光感測區之上。然後，將光阻層移 胃6 _ ’進行—祕氧化層餘 =氧，底2。之上，為，絕緣層26，鄰:二 “成井(：。極絕緣層之前，亦可視需要而先於基底2。 请參m7及8圖’藉由例如化學氣相沉積方法形成導電 二多晶梅屬(PGly_，彡與 ㈣ί 於閉極絕緣層26之上，間極28的-側 係製作於介電保護層24的一部分上。由於 跨在做為光感測區保護層的介電保護層上，因此，’=== =:電形成•時，或是於崎除開㈣ 的先阻I域測層不會受咖刻的難。然後， 雜區與感光層的製程，例如藉由離子佈植W，以間7遮 幕，對基錢進行離子的植入，於懸_ '中形 1295512 於光㈣區的基底中，亦進行離子佈植， 的摻輕摻雜的電性為η型或ρ型係依基底201295512 1 » IX. Description of the Invention: [Technical Field] The present invention relates to an image sensor and a method of fabricating the same, and more particularly to a complementary MOS transistor image sensor using a photodiode and Its method of production. [Prior Art] Complementary MOS Semiconductor CMOS image sensor j CIS Temple, charge c〇upied devices (CCDs) are used in the conventional technology to convert light For optical circuit components of electronic signals, the scope of application of the two is very wide, including scanners, cameras, cameras, etc., but because the carrier coupling device is limited by the high price and large volume, Complementary MOS transistor image sensors are popular on the market. The complementary MOS half-body transistor Vision "image sensor is based on the traditional semiconductor manufacturing process 1", so the cost and component size can be greatly reduced. Currently, it is roughly divided into two types: the line type and the line type. The MOS transistor image sensor is mainly used in products such as a mouse sweeper, and the face-type complementary MOS transistor image sensor is mainly applied to products such as digital cameras. • For the performance of CMOS image sensing components, dark current is important to the hope that it does not exist. The dark current is related to the defects caused by the manufacturing (four) shallow isolation structure (sti) local lithography (L0C0S), the electropolymerization defects, the wafer impurities, and the like. For example, the photodiode layer of the CMOS image sensing element is susceptible to damage during the electrical indentation process, thus producing dark current. No. 6,906,364 discloses a structure of a CMOS image sensing device for reducing the generation of dark current, comprising a photodiode sensing region, a transistor region component, and a self-aligned block (self-aligned block). ), and a protective layer. The photosensitive 'inductive sensing region and the transistor element region are formed in the substrate, and the self-aligned region j is formed on the photosensitive diode sensing region. A protective layer is formed over the entire substrate to cover the self-aligned blocks. Such a photosensitive diode sensing region can be protected from damage during subsequent subsequent stages to reduce dark current generation. However, the gate is formed before the formation of the _ protective layer, and the photosensitive diode sensing region is still at risk of damage during the formation of the gate using the plasma residual urging. Therefore, there is still a need for an image sensing element having a smaller amount of dark current, and a method of making same. SUMMARY OF THE INVENTION An object of the present invention is to provide an image sensing element having an improved dark current phenomenon. Another object of the present invention is to provide a method of fabricating an image sensing element to produce an image sensing element having improved dark current. The image sensing device according to the present invention comprises a substrate, a photo sensing region, a dielectric protective layer, a gate insulating layer, a gate, and a doped region. Light sensation area • It is located in the base. The dielectric protective layer is located on the light sensing area to serve as a light sensing 1295512 2 (4). The gate insulating layer is on the substrate adjacent to the dielectric protective layer. The interleave is located on the gate & edge layer, which spans to the portion of the dielectric cap layer. The Shanza area is located in the basement. The method of manufacturing an image sensing element according to the present invention comprises the following steps. The first ' provides a substrate comprising - a light pupil m in the substrate. Secondly, a package is formed to protect the light. Weaving, forming - the gate insulating layer on the substrate 10 is mixed with a dielectric protective layer. A portion is formed which is closed to the interpole insulating layer and extends to one side of the dielectric layer to the dielectric protective layer. Finally, a doped region is formed in the substrate on the other side of the gate and a photosensitive layer is formed in the photo sensing region. In still another aspect of the invention, the following steps are performed in the manufacture of an image sensing element in accordance with the present invention. First, a substrate is provided that includes a photo sensing region in the substrate. Then, a dielectric protective layer is formed on the photo sensing region. Photosensitive layer in the light sensing area. Then, a gate insulating layer is formed on the substrate and adjacent to the dielectric layer. Forming - the gate is on the gate insulating layer and extends the - side of the gate to the portion of the 'I. Finally, a doped region is formed in the other side of the gate. In still another aspect of the invention, a method of fabricating an image sensing element in accordance with the present invention comprises the following steps. First, a substrate is provided that includes a photo sensing region and a gate region in the substrate, wherein the gate region is surrounded by the photo sensing region. Next, a dielectric protective layer is formed on the photo sensing region. A 1295512 impurity region is formed in the substrate of the gate region. Next, a gate insulating layer is formed on the substrate of the gate region and adjacent to the dielectric layer. Forming a gate on the gate insulating layer and extending the sides of the gate to the portion of the dielectric protective layer. Finally, a photosensitive layer is formed in the photo sensing region. In still another aspect of the invention, a village for fabricating image sensing elements in accordance with the present invention includes the following steps. First, a substrate is provided that includes a photo sensing region and a gate region in the substrate, wherein the gate region is surrounded by the photo sensing region. Secondly, _ forms a layer of electric protection layer on the light sensing area. A photosensitive layer is formed in the photo sensing region and a doped region is formed in the substrate of the gate region. Next, a very insulating layer is formed on the substrate of the gate region and adjacent to the dielectric protective layer. Finally, a photo-sensing element is formed which is closed on the gate insulating layer and extends the side of the gate to a portion of the dielectric protective layer. The image sensing element according to the present invention forms a dielectric before the photo sensing region. The protective layer acts as a tilting layer, and then forms a pole on the substrate, especially the side of the formed gate spans to the portion of the dielectric protective layer. Therefore, the dielectric protective layer can protect the photosensitive layer of the domain, and can reduce the damage caused by the photoresist removal, the gate etching, and the spacers in the electropolymerization, thereby improving the dark electric scratch. In addition, in another embodiment of the present invention, the gate is placed in the region surrounded by the photo sensing region as far as possible without contacting the sti boundary, so that the leakage current is reduced by the influence of the defect induced by π]. , dark current). Furthermore, when the idle pole does not touch the STI boundary, there is no STI narrow width effect, and no barrier is caused below the interpole. * The charge transmission of the photo sensing region is affected. Therefore, the image sensing element according to the invention of 1259512 can have good performance. [Embodiment] Please refer to Figs. 1 and 2, and Fig. 2 is a cross-sectional view taken along line AA of Fig. 1. The image sensing device according to the present invention may be a CMOS image sensing device, including a substrate 20, a photo sensing region 22, a dielectric protective layer 24, a gate insulating layer 26, a gate 28, and a doped region. 30. The image sensing element is isolated from other components by a shallow trench trench isolation structure 21. The image sensing elements in accordance with the present invention are also susceptible to isolation by other means such as L〇c〇s. Substrate 20 can be a P-type or an n-type semiconductor substrate. The light sensing region 22 is located in the substrate 20. The light sensing region 22 may include a photosensitive layer %, which is a photosensitive material. For example, when the substrate 20 is a germanium type substrate, the photosensitive layer 32 may include a lightly doped layer 34 and a p-type heavily doped layer 36. The service (p-type l) photodiode, APD photodiode, or other general-purpose photodiode can be used as the photosensitive layer, but it is not limited to this. The dielectric cap layer 24 is located on the photo sensing region 22, such as over the photosensitive layer 32, as a protective layer for the photo sensing region 22. The dielectric protective layer can be a single layer or a multilayer dielectric layer. The single layer dielectric layer can be a layer of dielectric material such as a oxidized layer. The multilayer electrical layer may be, for example, a layer of oxygen-cut layer 38 and a layer of nitrogen-cut layer 4q on the layer of tantalum oxide or a plurality of layers of oxidized stone layers and a plurality of layers of nitride layer. - The dielectric protective layer is used to protect the light sensing area from subsequent processes such as the plasma process 1295512. ', the thickness of the dielectric protective layer can be improved without affecting the light transmission, and the drought is good. The preferred total thickness is not greater than that of Xiao 1000. One or two: When the dielectric layer is properly bonded to the appropriate thickness, for example, as small as viewed, it may also have an anti-reflective gate insulating layer 26 located at its & pole insulating adjacent dielectric protective layer 24. Gate on the _ edge layer: Upper: Second degree is better than less. _ is the position of the gate (four) including the conductive material; The step has a spacer 42: the interlayer = doped region 30 is an emulsified layer located at the interpole 28, or a multilayer dielectric layer. λ gentleman, the base 20 on the other side of the pole 28, for the electro-crystal! #功二=汲, source. The doped region may include a partially lightly doped region and a portion = a lightly doped layer TM having the same electrical property and a photodiode. According to the image sensing element of the present invention, the photosensitive layer of a main region has a -, /, , $ in; the position of the light sensing area and the center of the light sensing area, the closed pole, and the doping bottom, or the - part of the H' doping area can be located on the other side of the gate The shape of the base under the gate and the gate is not particularly limited. 1295512 Alternatively, the region in which the gate is located may be surrounded by the photo sensing region, as shown in FIG. 3 showing another embodiment of the image sensing element in accordance with the present invention, and FIG. 4 is shown in FIG. 3 along BB. A section view of the line segment. Wherein, the gate % is on the substrate of the region surrounded by the photo sensing region 52 and the side thereof is spanned over the dielectric protective layer 54, and the doped region 60 is partially located under the gate 58. in. The dielectric protective layer 54 includes an oxidized dream layer 68 and a nitrogen oxide layer 7 () located on the photosensitive layer to serve as a protective layer for the photosensitive layer 62. The photosensitive layer 62 may include a lightly doped layer #64 and a heavily doped layer 66. A gate insulating layer 56 is disposed on the substrate 50 adjacent to the dielectric layer 54. Gate 58 is located on gate insulating layer 56 with its sides spanning over a portion of dielectric protection layer 54. The doped region 6 is located in the substrate below the gate brother. The doped region 60 may be partially located in the substrate 5A below the gate 58 or may be located in the side substrate 50 of the gate 58 and not under the gate. The advantage of such a configuration that the gate is located on the substrate of the region surrounded by the photo-sensing region is that the pole does not touch the shallow trench structure or the LOCOS boundary, or only a small portion touches, so Lu is not subject to The effect of STI-induced defects can reduce dark current. Moreover, when the gate does not touch the STI boundary, there is no milk narrow width effect, and no barrier is caused under the gate to affect the charge transmission of the light sensing region. Figures 5 through 8 show a specific embodiment of a method of fabricating an image sensing element in accordance with the present invention. Referring to Figure 5, first, a substrate 2 () is provided in which a shallow trench isolation structure has been fabricated and has a photo-sensing region (not shown). The formation of a oxidized stone layer on the surface of the substrate by thermal oxidation, and the use of Wei and ammonia as a processing gas by electropolymerization enhanced chemical vapor deposition, forming a 1295512 nitrogen layer on the oxidized stone layer. To go to the system ~ Xi Wen as; If necessary, repeat this step several times: the dielectric material layer. For the lithography process, a portion of the dielectric material layer having a corresponding pattern is formed to cover the predetermined portion of the dielectric protective layer corresponding to the photosensitive contact to use =::! (10) She can use dry, such as the plasma side. On the side of the oxygen (four) layer, a dielectric protection of 4 Å can be defined, including the formation of the oxidized stone layer 38 and the nitride layer. , θ 4 is recuperated over the light sensing area. Then, the photoresist layer is transferred to the stomach 6 _ ' to carry out the secret layer oxide = oxygen, bottom 2. Above, is the insulating layer 26, adjacent: two "wells (: before the pole insulating layer, can also be preceded by the substrate 2 as needed. Please refer to the m7 and 8 maps] to form conductive more by chemical vapor deposition, for example. The genus Pythium (PGly_, 彡 and (4) ί is over the closed-pole insulating layer 26, and the side of the interpole 28 is formed on a portion of the dielectric protective layer 24. Due to the dielectric across the protective layer of the photo-sensing region On the protective layer, therefore, '=== =: when the electricity is formed, or when the first-resistance I-domain layer of the stripping (4) is not difficult to be engraved. Then, the process of the miscellaneous area and the photosensitive layer, for example, The ion is implanted by W, and the ion is implanted by the interstitial, and the ion is implanted in the base of the light (four) region of the suspension. Η-type or ρ-type dependent substrate 20
可進-步於· 28的㈣形成間隙壁42 ♦積方法形成氧切層，於基絲上，㈣H =2成Γ_。之後，可進-步進行更重的離子佈植，於 利區r2yi底2G中形成重摻雜區(未示出），及於光感 _元件成—重捧雜區。如此，製得如第1及2圖所示的影像 、/參閱第9至13圖，於依據本發明的另—具體實施例中， 感光層可於形成介電保護層後即製備。第9 _示於形成介電 保護層24的步驟後，進行離子佈植29，可使用光阻層31做為 單幕’以於光感漸形成—輕摻雜層34，及進—步形成一重換 雜層36 ’成為感光層32。第1()圖顯示去除光阻層後，形成間 極絕緣層26鄰接介電保護層24。第11圖顯示於閘極絕緣層％ 之上以如上述的方法形成_閘極28,其—侧係跨至介電保護層 24的-部分上’因此於製程中，介電保護層Μ下方的感光層 32可受到保護。 〜 θ 第12圖顯示摻雜區的製造。將光感測區以圖案化的光阻層 1295512 * » 33遮蔽’進行輕離子佈植35，形成—輕摻純施。請 I3圖再如上逑形成間隙壁42，進行重離子佈植，形成 雜區，如此形成摻雜區30。然後，去除光阻層33，製得; 及2圖所示的影像感測元件。 弟1 於依據本發明的影像感測元件配置如第3及4圖所 形時，因為摻雜區60部分位於閘極58的下方，因^ 間⑽响成摻雜區60,如第14至15圖所示。第二 不”電保複層54，其包括氧化發層68及氮化梦層％，已: 用圖案化光阻層做為遮幕，進行離子佈植， =摻f此摻雜區⑼的寬度w及形成的光感測區η 圖祕-起蚊閘極58的寬度。接著，如第15圖所示，於基 S ΠΓ雜區60上形成間極絕緣層56。接著，於閘極絕緣層 >、間極58，其侧邊跨至介電保護層54的部分上。最後， 早^結子佈植製私’於光感測區52先後進行輕離子佈植及重離 ’形成輕摻雜層64及重摻雜層66，成為感光層62，製 传如弟3及4圖所示的影像感測元件。 ，者’於另—具體實施财，可於形成閘極％之前形成捧 =〇及感光層62。如第16圖所示，介電保護層54，其包括 Γ始Γ68及氮切層7G，已形成於光麵區上。藉由離子 、“成摻雜區60(可包括輕摻雜區及重捧雜區換感光 曰（可包括輕摻雜層64及重摻雜層66)。接著，於基底50 14 1295512 及摻雜區60上形成閘極絕緣属 至介電保護層54的部分上。亦㈣1再軸間極58，其側邊跨 感測元件。 、I传如第3及4圖所示的影像 負 以上所述僅為本發_她實麵， 乾園所做的均等變化邮# 一 專利 /、>飾，白應屬本發明的涵蓋範圍。(4) Forming the spacer 42 ♦ The method of forming the oxygen cut layer on the base wire, (4) H = 2 into Γ _. Thereafter, a heavier ion implantation can be performed in a stepwise manner to form a heavily doped region (not shown) in the bottom region 2G of the r2yi region, and the light-inducing element becomes a heavy-grain region. Thus, images as shown in Figs. 1 and 2, and Figs. 9 to 13 are obtained. In another embodiment according to the present invention, the photosensitive layer can be prepared after forming a dielectric protective layer. After the step of forming the dielectric protective layer 24, the ion implantation 29 is performed, and the photoresist layer 31 can be used as a single screen to form a light-doped layer 34, and the light-doped layer 34 is formed. The one-time alternating layer 36' becomes the photosensitive layer 32. The first (1) figure shows that after the photoresist layer is removed, the formation of the interlayer insulating layer 26 is adjacent to the dielectric protective layer 24. Figure 11 shows that over the gate insulating layer %, the gate 28 is formed as described above, and the side is spanned to the portion of the dielectric protective layer 24. Thus, during the process, the dielectric protective layer is underneath. The photosensitive layer 32 can be protected. ~ θ Figure 12 shows the fabrication of the doped regions. The light sensing region is patterned with a photoresist layer 1295512* » 33 to perform light ion implantation 35 to form a light-doped pure application. In the case of the I3 pattern, the spacers 42 are formed as above, and heavy ion implantation is performed to form a dummy region, thereby forming the doping region 30. Then, the photoresist layer 33 is removed, and the image sensing elements shown in FIG. 2 are obtained. When the image sensing element according to the present invention is configured as shown in FIGS. 3 and 4, since the doped region 60 is partially located below the gate 58, the (10) is turned into the doped region 60, as in the 14th to Figure 15 shows. The second non-electrical protective layer 54, which includes the oxidized hair layer 68 and the nitrided dream layer, has: used the patterned photoresist layer as a curtain to perform ion implantation, = doping the doped region (9) The width w and the formed photo-sensing region η--the width of the mosquito gate 58. Next, as shown in Fig. 15, a spacer insulating layer 56 is formed on the base S doping region 60. Then, at the gate The insulating layer >, the interpole 58 has its side spanning over the portion of the dielectric protective layer 54. Finally, the early soldering of the patch is performed in the light sensing region 52 for light ion implantation and re-dissection. The lightly doped layer 64 and the heavily doped layer 66 become the photosensitive layer 62, and the image sensing elements as shown in the figures 3 and 4 are produced, and the other is implemented in the form of the gate %. A handle layer is formed and a photosensitive layer 62 is formed. As shown in Fig. 16, a dielectric protective layer 54 including a germanium tantalum 68 and a nitrogen cut layer 7G has been formed on the smooth surface region. 60 (which may include a lightly doped region and a heavily doped region for photoreceptor (which may include a lightly doped layer 64 and a heavily doped layer 66). Next, a gate insulator is formed on the substrate 50 14 1295512 and the doped region 60 To the portion of the dielectric protective layer 54. (4) 1 and then the inter-axis pole 58 with its side spanning the sensing element. I pass the image as shown in Figures 3 and 4, and the above is only the present. Face, the equal change made by the dry garden #一专利/,> Decoration, white should be the scope of the present invention.
【圖式簡單說明】 二^示依據本發明的影像感測讀的—具體實施例的頂視 思圖。 ^ 2圖顯不沿著第1圖所示的ΑΑ，線段的剖面示意圖。 、目一圖』讀據本發明的影像感測元件的另_具體實施例的頂 現示意圖。 第4圖顯示沿著第3圖所示的ΑΑ，線段的剖面示意圖。BRIEF DESCRIPTION OF THE DRAWINGS A top view of a specific embodiment of an image sensing read in accordance with the present invention is shown. ^ 2 shows a schematic diagram of the section of the line segment that does not follow the ΑΑ shown in Figure 1. BRIEF DESCRIPTION OF THE DRAWINGS A top schematic view of another embodiment of an image sensing device in accordance with the present invention is shown. Fig. 4 is a cross-sectional view showing the line segment along the ΑΑ shown in Fig. 3.
第5至8圖顯示依據本發明的影像感.件的製造方法的一具 體實施例。 第9至13圖顯示依據本發明的影像感測元件的製造方法的另一 具體實施例。 至Μ圖顯示依據本發明的影像感測元件的製造方法的又 具體實施例。 第16圖顯示依據本發明的影像感測元件的製造方法的又另一 具體實施例。 15 1295512Figures 5 through 8 show a specific embodiment of a method of manufacturing an image sensing member in accordance with the present invention. Figures 9 through 13 show another embodiment of a method of fabricating an image sensing element in accordance with the present invention. The drawings show still further embodiments of a method of fabricating an image sensing element in accordance with the present invention. Fig. 16 shows still another specific embodiment of the method of fabricating the image sensing element according to the present invention. 15 1295512
【主要元件符號說明】 20、50 基底 21 22 > 52 光感測區 23、31、33 24、54 介電保護層 26、56 27 離子佈植 28、58 29 離子佈植 30、60 32、62 感光層 34 〜64 30a、34a 輕摻雜區 35 36、66 重摻雜層 38、68 40、70 氮化矽層 42 淺溝槽隔離結構 光阻層 閘極絕緣層 閘極 摻雜區 輕摻雜層 輕離子佈植 氧化矽層 間隙壁[Main component symbol description] 20, 50 substrate 21 22 > 52 light sensing area 23, 31, 33 24, 54 dielectric protective layer 26, 56 27 ion implantation 28, 58 29 ion implantation 30, 60 32, 62 photosensitive layer 34 ~ 64 30a, 34a lightly doped region 35 36, 66 heavily doped layer 38, 68 40, 70 tantalum nitride layer 42 shallow trench isolation structure photoresist layer gate insulating layer gate doped region light Doped layer light ion implanted yttria layer spacer
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