1293579 之技術領域】 玖、發明說明： t 明戶斤屬 技術領域 5 本發明係有關於可將液體塗布於被處理基板上且形成 塗布膜之長條型塗布嘴嘴及塗布裝置。 t先前技】 背景技術 迄今，在LCD或半導體元件等之製造程序中的微影成 像v驟中U例如專利文獻丨所揭示之具有縫隙狀噴出口之 1〇長條型光㈣嘴作為_將絲液塗布於被處理基板(玻 璃基板、半導體晶圓等)上之光阻噴嘴的其中—形式是已知 的。 一在利用上述長條型噴嘴之光阻塗布裝置中，如第_ 斤示在水平地載置於載置台或保持板(未圖示)上之基板〇 15與長條型光阻噴嘴100之下端面的噴出口之間設定數百㈣ 以下之微小間隙，且一面使光阻喷嘴1〇〇在基板〇上方朝掃 描方向（-般指與喷嘴長向垂直之水平方向)移動，一面將光 阻液喷至基板G上。此時，嘴至基板G上的光阻液會由於濕 潤(wet)現象而附著於光阻噴嘴1〇〇之背面下部驗，且朝高 度方向擴散（诱起），並形成朝喷嘴長向延伸之凸面狀彎月 面。該彎月面的形狀由光阻液的表面張力及黏度或喷嘴喷 出部或者背面部的形狀等來決定，正常狀態下，彎月面的 頂部位置會穩定在某-固定高度的水平線，即，濕線wl。 唯有當該濕線WL的高度位置gj定時，才可以在基板〇上以 I293579 . 固义膜厚形成光阻液的塗布膜。 在利用上述長條型光阻噴嘴1〇〇之光阻塗布裝置中，在 塗布處理中由於濕潤現象而附著於光阻喷嘴1〇〇之背面下 哗的光阻液之頂部線或濕線WL與基板上之光阻塗布膜的 5外形有關，且唯有當濕線WL在固定高度位置保持水平或一 直線時，才可以在基板上以固定膜厚形成光阻塗布膜。然 而，在過去此種光阻塗布裝置中，由於濕線WL的高度位置 不固定或不穩定，因此，產生膜厚管理不易的問題，或者， 若在濕線WL穩定的高度位置附近，在光阻喷嘴的表面 10 100a有表面狀態不良之處，例如，有髒污或附著粒子之處， 則，如第13圖所示，在對應於該不良處1〇2之基板G上的位 置會產生朝知描方向延伸的筋狀塗布不均1 〇4。 本發明有鑑於上述習知技術的問題，其目的在於提供 可在被處理基板上形成膜厚固定且沒有塗布不均的塗布膜 15 之長條型塗布喷嘴及塗布裝置。 本發明之另一目的在於提供可在固定高度位置形成穩 定的濕線之長條型塗布喷嘴。 【發明内容3 發明概要 20 為了達成上述目的，本發明之塗布噴嘴係與大致水平 地配置之被處理基板隔著期望之微小間隙，朝預定掃描方 向相對地水平移動，並將塗布液塗布於前述基板上者，且 該塗布喷嘴具有長條狀之噴嘴本體，又，該喷嘴本體包含： 下端面，形成有用以喷出前述塗布液之嘴出口；及背面， 1293579 係在箾述喷出口之掃描方向後方，從前述下端面朝上方延 伸，且一部分會在塗布處理中被從前述噴出口喷出至前述 基板上的塗布液濕潤，又，用以使塗布處理中濕潤前述喷 嘴本體背面之前述塗布液的正常極限位置與期望濕線一致 5 之物理性分界部設於前述喷嘴本體背面。 在本發明之塗布喷嘴中，在塗布處理中，使由於濕潤 現象而附著於本體背面且朝高度方向擴散之塗布液的極限 位置實體上與設於喷嘴本體背面之分界部一致，藉此，可 使濕線穩定並固定在段差部之高度位置。如此一來，可將 1〇塗布膜管理成固定的膜厚，並可避免出現筋狀的塗布不均。 在本發明之塗布喷嘴中，為了得到均勻的膜厚，喷嘴 本體背面之物理性的分界部宜在固定高度位置直線狀地沿 著噴嘴本體之長向延伸。 根據本發明之其中一較佳態樣，噴嘴本體背面之分界 由段差部所形成。該段差部宜包括··第1背面部，實質上 =向知描方向後方，且從前述喷嘴本體之下端面的其中一 上方L伸至固疋尚度位置，·第2背面部，實質上朝向下 且從别述第1¾面部之上端朝掃描方向後方延伸；及第 20 ^面部’實f上朝向掃描方向後方，且從前述第2背面部 立、出、朝上方延伸’又，將前述濕線限定在前述第2背面 m在忒構這中，在屋簷狀的第2背面部從上方抑制附著於 第1月面部且朝高度方向擴散之塗布膜頂部的狀態下形成 /愚線:此時，第3背面部下端宜設定在與第1背面部上端大 致等高的位置或較低的位置。第⑶面部宜與水平面成銳 1293579 角，且以朝上方延伸的平坦面形成。 部二=Γ喷嘴本體背面之段差部包括:第1背面 面的:Γ 向後方’且從前述噴嘴本體之下端 5 Ϊ = 糊至叫度位置；料面部，Ϊ 延：=，且從前述第1背面部之上端朝掃描方向前方 第部’實f上朝向掃描方向後方，且從前述 苐2月面。卩之掃描方向前方的端部朝上方延伸，又 濕線限定在形成於針十、笛 、月j边 角t在t 部與前述第2背面部之間的 10之⑽角=造中’以她M於第1編卩與第2背面部 ===:Γ面部且朝高度_散之 在與第1背面部上自#二:面部下端宜設定 寻回的位置或較低的位置。第1背 :水平面成銳角，且以朝上方延伸的平坦面形成。 面部的分界所形成。分割之上部背面部與下部背 呈顏k 攻具體而吕’下部背面部具有對塗布液 萨皮卜/生的表面’另—方面’上部背面部具有對塗布液呈 :面’的fr或者’下部背面部具有粗糙的表面，另-)〇 , 卩月面4具有光滑的表面。下部背面部可從喷嘴 A之下端面的其中—端朝斜上方延伸至第1高度位置，而 /背面部則從第1高度位置朝斜上方延伸至第2高度位 置。 X月之塗布裝置包含本發明之塗布喷嘴、可將塗布 ⑽給至前述塗布噴嘴之塗布液供給部、可大致水平地支 1293579 持被處理基板之基板續部、與由前述純切部 前述基板隔著期望之微小_來支持前述塗布噴嘴之= 支持部，及可在前述基板支持部與前述喷嘴支持部之間進 =相對的水平移動，使前述塗布喷嘴在維持前述間隙之狀 態下，朝默掃財向在㈣基板上相對地水平移動之掃 “部。在該構造中’利用本發明之塗布喷嘴，可將濕線穩 疋並固定在m定高度位置，並可進一步管理塗布膜膜厚及 膜質。Technical Field of 1293579 玖 发明 发明 发明 发明 发明 发明 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 技术 。 。 。 。 。 。 。 。 。 。 BACKGROUND OF THE INVENTION In the lithography imaging process in the manufacturing process of an LCD or a semiconductor element, etc., for example, a slit type light (four) nozzle having a slit-like discharge port disclosed in the patent document is used as The form in which the silk liquid is applied to the photoresist nozzle on the substrate to be processed (glass substrate, semiconductor wafer, etc.) is known. In the photoresist coating apparatus using the above-described elongated nozzle, the substrate 15 and the elongated photoresist nozzle 100 which are horizontally placed on a mounting table or a holding plate (not shown) are shown in the first embodiment. A small gap of several hundred (four) or less is set between the discharge ports of the lower end surface, and the photoresist nozzle 1 is moved over the substrate 朝 in the scanning direction (the horizontal direction perpendicular to the longitudinal direction of the nozzle). The liquid barrier is sprayed onto the substrate G. At this time, the photoresist liquid on the nozzle to the substrate G adheres to the back surface of the photoresist nozzle 1 due to the wet phenomenon, and diffuses (induced) in the height direction, and forms a long direction toward the nozzle. The convex meniscus. The shape of the meniscus is determined by the surface tension and viscosity of the photoresist or the shape of the nozzle discharge portion or the back portion. Under normal conditions, the top position of the meniscus is stabilized at a certain level of a fixed height, that is, , wet line wl. Only when the height position gj of the wet line WL is timed, a coating film of the photoresist liquid can be formed on the substrate by a thickness of I293579. In the photoresist coating apparatus using the above-described long-type resistive nozzle 1 ,, the top line or wet line WL of the photoresist which adheres to the back surface of the photoresist nozzle 1 due to the wetting phenomenon during the coating process It is related to the outer shape of the photoresist coating film on the substrate, and the photoresist coating film can be formed on the substrate with a fixed film thickness only when the wet line WL is kept horizontal or straight at a fixed height position. However, in the conventional photoresist coating apparatus, since the height position of the wet line WL is not fixed or unstable, there is a problem that film thickness management is not easy, or, in the vicinity of the height position where the wet line WL is stable, in the light The surface 10 100a of the resisting nozzle has a surface state defect, for example, where there is dirt or adhesion of particles, as shown in Fig. 13, a position on the substrate G corresponding to the defective portion 1〇2 is generated. The rib-like coating extending in the direction of the drawing is not uniform 1 〇4. The present invention has been made in view of the above problems in the prior art, and an object of the invention is to provide a long coating nozzle and a coating apparatus which can form a coating film 15 having a constant film thickness and no coating unevenness on a substrate to be processed. Another object of the present invention is to provide a long strip type coating nozzle which can form a stable wet line at a fixed height position. SUMMARY OF THE INVENTION In order to achieve the above object, the coating nozzle of the present invention is horizontally moved in a predetermined scanning direction with a desired minute gap between a substrate and a substrate to be processed substantially horizontally, and the coating liquid is applied to the above. On the substrate, the coating nozzle has a long nozzle body, and the nozzle body comprises: a lower end surface forming a nozzle outlet for ejecting the coating liquid; and a back surface, 1293579 scanning the nozzle The rear side of the direction extends upward from the lower end surface, and a part of the coating liquid which is ejected from the ejection port to the substrate during the coating process is wetted, and the coating of the back surface of the nozzle body is wetted during the coating process. The physical boundary portion of the normal limit position of the liquid and the desired wet line is provided on the back surface of the nozzle body. In the coating nozzle of the present invention, in the coating process, the limit position of the coating liquid adhered to the back surface of the main body due to the wetting phenomenon and diffused in the height direction is physically coincident with the boundary portion provided on the back surface of the nozzle body, whereby The wet line is stabilized and fixed at the height position of the step portion. In this way, the coating film can be managed to a fixed film thickness, and uneven coating unevenness can be avoided. In the coating nozzle of the present invention, in order to obtain a uniform film thickness, the physical boundary portion of the back surface of the nozzle body preferably extends linearly along the longitudinal direction of the nozzle body at a fixed height position. According to a preferred aspect of the invention, the boundary of the back side of the nozzle body is formed by the step portion. Preferably, the step portion includes a first back portion, substantially = rearward in the direction of the drawing, and extends from one of the upper ends L of the lower end surface of the nozzle body to a fixed position, and the second back portion is substantially a downward direction and extending rearward from the upper end of the 13th surface of the other side toward the scanning direction; and the 20th surface of the second surface is oriented rearward in the scanning direction, and extends from the second back surface portion upwardly and upwardly. In the second back surface portion, the second back surface portion is formed in a state in which the second back surface portion of the eaves is restrained from the top portion of the coating film which is adhered to the first month surface and diffused in the height direction. In this case, the lower end of the third back surface portion should be set to a position substantially equal to the upper end of the first back surface portion or a lower position. The (3) face should have a sharp angle of 1293579 with the horizontal plane and be formed with a flat surface extending upward. The second step of the second nozzle Γ nozzle body includes: the first back surface: Γ rearward and from the lower end of the nozzle body 5 Ϊ = paste to the position; the material face, delay: =, and from the foregoing 1 The upper end of the back surface portion faces the scanning portion in the front direction of the scanning portion, and the rear side faces the scanning direction, and is formed from the aforementioned 苐2 moon surface. The end portion in front of the scanning direction of the crucible extends upward, and the wet line is limited to 10 (10) angle formed between the t portion and the second back portion at the corner t of the needle ten, the flute, and the month j. She M is in the first edit and the second back part ===: Γ face and height _ scattered on the first back part from #二: the lower end of the face should be set to find the position or lower position. First back: The horizontal plane forms an acute angle and is formed by a flat surface that extends upward. The boundary of the face is formed. The upper back portion and the lower back portion are divided into a face and the lower back portion has a specific surface, and the lower back portion has a surface for the coating liquid Sappib/other's other side. The upper back portion has a fr or 'for the coating liquid: face' The lower back portion has a rough surface, and the other side has a smooth surface. The lower back portion may extend obliquely upward from the center end of the lower end surface of the nozzle A to the first height position, and the / back portion may extend obliquely upward from the first height position to the second height position. The coating apparatus of the X month includes the coating nozzle of the present invention, the coating liquid supply unit that can apply the coating (10) to the coating nozzle, the substrate continuation portion that can support the substrate to be processed substantially horizontally 1293579, and the substrate from the purely cut portion. A small amount of _ is required to support the coating nozzle = support portion, and a relative horizontal movement between the substrate supporting portion and the nozzle supporting portion, and the coating nozzle is maintained in a state in which the gap is maintained Sweeping the sweeping portion to the horizontally moving portion on the (four) substrate. In this configuration, the wettating wire can be stabilized and fixed at a fixed height position by using the coating nozzle of the present invention, and the coating film thickness can be further managed. And membranous.
根據本發明之塗布喷嘴，藉由上述構造與作用，可將 10知、疋的濕線形成在固定高度位置，並可在被處理基板上形 成膜厚固定且沒有塗布不均的塗布膜。 根據本發明之塗布裝置，藉由上述構造與作用，可在 被處理基板上形成膜厚固定且沒有塗布不均的塗布膜。 圖式簡單說明 15 第1圖係顯示可適用本發明之塗布顯像處理系統的構According to the coating nozzle of the present invention, the wet line of 10 turns can be formed at a fixed height position by the above-described configuration and action, and a coating film having a fixed film thickness and no uneven coating can be formed on the substrate to be processed. According to the coating apparatus of the present invention, by the above-described configuration and action, a coating film having a fixed film thickness and no uneven coating can be formed on the substrate to be processed. BRIEF DESCRIPTION OF THE DRAWINGS 15 Fig. 1 shows the construction of a coating development processing system to which the present invention is applicable.
造之平面圖。 第2圖係顯示實施形態之塗布顯像處理系統之熱處理 部的構造之側視圖。 第3圖係顯示實施形態之塗布顯像處理系統之處理順 2〇 序的流程圖。 第4圖係顯示實施形態之塗布顯像處理系統之塗布製 程部之構造的上視圖。 第5圖係顯示實施形態之塗布製程部之塗布處理部的 構造。 9 造之續*根據其中—實施例之^噴嘴的外觀構 嘴之主要部分的構 胃7 __示根據實施例之光阻 造與作用之部岣面側視圖。、 第8圖係顯示根據實施例之光阻 第9圖係顯示根據實施例之嘴嘴故 1 的作、用，透視圖。 部分截面側視圖。 11測Is的作用之 噴嘴之主要部分 第10圖係顯示根據其他實施例 的構造與作用之部分截面側視圖。1 第11圖係顯示根據其他實施例 的透視圖。 先卩且噴嘴之外觀構造 之主要部分的構 第12圖係顯示根據實施例之光阻噴嘴 造與作用之部分截面侧視圖。 第13圖係顯示 的透視圖。 t知縫隙型光阻嘴嘴之外觀構造與作用 【實施方式】 實施發明之最佳形態 以下’參照第1圖〜第12圖說明本發明之較佳實施形態。 第1圖係顯示作為可適用本發明之塗布喷嘴及塗布裝 置之構U例的塗布顯像處理彡統。該塗布顯像處理系統 10係設置於料錢，且以例如LCD基板作為被處理基 板，並在LCD製造程序中進行微影成像步驟中之洗淨、光 阻塗布、預焙、顯像及後焙等一連串的處理。曝光處理則 由没置成與該處理系統相鄰接之外部曝光裝置12來進行。 1293579 該塗布顯像處理系統ίο係在中心部配置橫長的製程站 (P/S)16，且在其長向（X—方向）兩端部配置匣盒站（c/S)14與 介面站（I/F)18。 匣盒站(C/S)14包含作為系統1〇之匣盒搬入搬出埠且可 5 在例如Y方向之水平方向並排4個來載置可以多段積層之形 態收容多片角型玻璃基板G之匣盒C之匣盒台20及將基板g 搬入該匣盒台20上之匣盒C且從該匣盒C搬出基板G之搬送 機構22。搬送機構22具有可保持基板G之構件，例如，搬送 臂部22a，該搬送臂部22a可在Χ、γ、ζ、04軸動作，且可 10 與相鄰接之製程站(P/S)16傳送基板G。 製程站(P/S)16係依照製程流程或步驟順序將各處理部 配置於沿著系統長向（X-方向）延伸之平行且逆向的一對生 產線A、B。詳而言之，在從£盒站（C/S)14朝向介面站(i/f)18 之上游部的製程線A中橫向一列地配置洗淨製程部24、第丄 15熱處理部26、塗布製程部28及第2熱處理部3〇。另一方面， 在從介面站（I/F)18朝向匣盒站（C/S)14之下游部的製程線B 中橫向一列地配置第2熱處理部30、顯像製程部32、脫色製 程部34及第3熱處理部36。於該生產線形態中，第2熱處理 部30係位於上游之製程線A的最尾端，同時位於下游之製程 2〇 線B的最前頭，並跨設於兩生產線a、B之間。 於兩製程線A、B之間設有辅助搬送空間38，該辅助搬 送空間38可使可以-片為單位水平地載置基板〇之往復搬 運車40藉由未圖示之驅動機構在生產線方向（乂—方向）雙向 移動。 11 1293579 於上游部之製程線A中，洗淨製程部24包含洗刷洗淨單 MSCR)42，且在該洗刷洗淨單元（SCR)42内與匣盒站 (c/s)io相鄰接之處配置激分子11¥照射單元卜―υν)4ι。洗 J先淨單元(SCR)42内的洗淨部可一面藉由滾輪搬送或帶 5搬送以水平姿勢朝生產線A方向搬送基板G，一面在基板^ 上面（被處理面）施加洗刷洗淨或吹洗。 與洗淨製程部24之下游相鄰接之第丨熱處理部26係沿 著製程線A在中心部設置縱型的搬送機構牝，且在其前後兩 α置與基板傳送用傳遞單元一起多段地積層配置多數板 1〇式乾燥單元所構成之多段單元部或乾燥塔(ΤΒ)44、48。 例如，如第2圖所示，於上游之乾燥塔(丁叫料係由下依 序積層有基板搬入用傳遞單元(PASSl)5〇、脫水烘培用加熱 單元(DHP)52、54及黏著單元(AD)56。於此，提供傳遞單Z (pasSl)5G可將來自洗職淨單元(SCR)42且已完成洗淨處 15理之基板0搬入第1熱處理部26内的空間。於下游之乾燥塔 (TB)48係由下依序積層有基板搬出用傳遞單^ (PASSR)60、基板溫度調整用冷卻單元(c〇L)62、料及黏著 單元(AD)66。於此，提供傳遞單元(PASSr)6〇可將已在第i 熱處理部26完成必要的熱處理之基板G搬至塗布製程部“ 20 的空間。 第2圖中，搬送機構46包含可沿著沿垂直方向延伸之引 導軌道68升降移動之升降搬送體7〇、可在該升降搬送體％ 上朝Θ方向旋轉或迴轉之迴轉搬送的，及可在該迴轉搬 送體72上，—面支持基板G，—面在前後方向進退或伸縮之 12 1293579 :、或銷"且件74。用以升降驅動升降搬送體70之驅動 又於垂直引導轨道68末端，用以迴轉驅動迴轉搬送體 74、、"動。卩78女裝於升降搬送體70，而用以驅動搬送臂部 進^之驅動部80安裝於旋轉搬送體72。各驅動部76、78、 5 80可以例如電動馬達等來構成。 如上所述所構成之搬送機構46可快速地升降乃至於迴 轉運動並進人相鄰之乾燥塔(TB)44、48巾的任-單元，亦 可與輔助搬送空間38側之往復搬運車刪專送基板g。 與第1熱處理部26之下游相鄰接之塗布製程部28係如 1〇第1圖所示，沿著製程線A—列地配置光阻塗布單元(CT)82 #減壓乾單元(VD)84。塗布製程部湖的構造則在之後 詳細地說明。 與塗布製程部28之下游相鄰接之第2熱處理部3〇係與 鈾述第1熱處理部具有相同構造，該第2熱處理部30係在兩 15製程線A、B之間設置縱型的搬送機構90，且在製程線入上 (最尾端)設有其中一乾燥塔(TB)88，並在製程線6上(前頭) 設有另一乾燥塔(TB)92。 雖省略圖式，但，例如，亦可於製程線A上之乾燥塔 (TB)88在最下段配置基板搬入用傳遞單元(PASSl)，且於基 20板搬入用傳遞單元(passl)上積層例如3段之預焙用加熱單 元(PREBAKE)。又，亦可於製程線3上之乾燥塔(TB)92在最 下段配置基板搬出用傳遞單元(PASSR)，且於基板搬出用傳 遞單元(PASSR)上重疊例如1段之基板溫度調整用冷卻單元 (COL)，並於基板溫度調整用冷卻單元(〔〇1^)上積層例如2 13 1293579 段之預焙用加熱單元(PREBAKE)。 第2熱處理部30之搬送機構90不僅可分別透過兩乾燥 塔(TB)82、92之傳遞單元(PASSL)、（PASSR)以一片為單位與 塗布製程部28及顯像製程部32傳送基板G，亦可以一片為單 5 位與輔助搬送空間38内之往復搬運車40或後述介面站 (I/F)18傳送基板G。 於下游部之製程線B中，顯像製程部32—面以水平姿勢 搬送基板G，一面進行一連串的顯像處理步驟，且包含所謂 連續線方式之顯像單元(DEV)94。 0 於顯像製程部32之下游隔著脫色製程部34配置第3熱 處理部36。脫色製程部34包含用以將i線(波長365nm)照射至 基板G之被處理面且進行脫色處理之i線UV照射單元（i — UV)96。 第3熱處理部36與前述第1熱處理部26或第2熱處理部 15 30具有相同構造，第3熱處理部36係沿著製程線B設置縱型 搬送機構100及其前後兩側的一對乾燥塔(TB)98、102。 雖省略圖式，但，例如，亦可於上游之乾燥塔(TB)98 在最下段設置搬入用傳遞單元(PASSl)，且於其上積層例如 3段之後焙用加熱單元(POBAKE)。又，亦可於下游之乾燥 20 塔(TB)102在最下段設置後焙單元(POBAKE)，且於其上重 疊1段基板搬出及冷卻用傳遞·冷卻單元(PASSR · COL)， 並於傳遞·冷卻單元(PASSR · COL)上積層2段後焙用加熱 單元(POBAKE)。 第3熱處理部36之搬送機構100不僅可透過兩多段單元 14 1293579 部（ΤΒ)98、102之傳遞單元（pASSl)及傳遞·冷卻單元 (PASSR · COL)分別以一片為單位與匕線^^照射單元〇 — UV)96及匣盒站(C/S)14傳送基板G，亦可以一片為單位與輔 助搬送空間38内之往復搬運車4〇傳送基板g。 5 介面站（I/F)18具有用以與相鄰接之曝光裝置12傳送基 板G之搬送裝置104，且於其周圍配置有緩衝台（BUF)1〇6、 伸展·冷卻台（EXT · COL)108及周邊裝置no。於緩衝台 (BUF)106設有定置型緩衝匣盒（未圖示）。伸展·冷卻台 (EXT · COL)l08為具有冷卻功能之基板傳送用平台，且用 10在與製程站(P/S)16傳送基板G時。周邊裝置11〇可例如為上 下積層字幕編輯器（TITLER)與周邊曝光裝置(EE)之構造。 搬送裝置104具有可保持基板G之機構，例如，搬送臂部 104a，且可與相鄰接之曝光裝置12或各單元（BUF)106、 (EXT · COL)108、（TITLER/EE)110傳送基板G。 15 第3圖係顯示該塗布顯像處理系統之處理順序。首先， 於匣盒站（C/S)14中，搬送機構22從匣盒台20上的任一匣盒 C中取出一片基板G，且將該基板G搬入製程站（p/s)16之洗 淨製程部24的激分子UV照射單元(e —UV)41(步驟SJ。 於激分子UV照射單元(e — UV)41内對基板G施加藉由 20照射紫外線所進行的乾洗(步驟S2)。在該紫外線洗淨中，主 要是去除基板表面的有機物。在紫外線洗淨結束後，基板G 會藉由匣盒站（C/S)14的搬送機構22移送至洗淨製程部24之 洗刷洗淨單元(SCR)42。 於洗刷洗淨單元(SCR)42中，如上所述，一面藉由滾輪 15 1293579 搬送或帶搬送以水平姿勢將基板〇以連續線方式朝製程線 A方向搬送，一面在基板G上面（被處理面）施加洗刷洗淨或 吹洗，藉此，從基板表面除去粒子狀的污垢（步驟S3)。然後， 在洗淨後亦一面以連續線方式搬送基板G，一面施加沖洗處 5理，且最後利用氣刀等使基板G乾燥。 於洗刷洗淨單元(SCR)42内結束洗淨處理之基板G會被 搬入第1熱處理部26之上游乾燥塔（TB)44内之傳遞單元 (PASSL)50。 在第1熱處理部26中，基板G藉由搬送機構46以預定順 10序依序傳送至預定乾燥單元。例如，基板G最初從傳遞單元 (PASSL)50移送至加熱單元(DHP)52、54其中一個，且於此 接受脫水處理（步驟SO。接著，基板(^移送至冷卻單元 (COL)62、64其中一個，且於此冷卻至預定基板溫度（步驟 S5)。然後，基板G移送至黏著單元(AD)56，且於此接受疏 15水化處理（步驟心）。在該疏水化處理結束後，基板G會在冷 卻單tg(COL)62、64其中一個冷卻至預定基板溫度（步驟 S7)。最後，基板G移送至下游乾燥塔(TB)48之傳遞單元 (PASSR)60 〇 如此一來，在第1熱處理部26内，基板G可透過搬送機 20構46在上游乾燥塔(TB)44與下游乾燥塔(TB)48之間隨意地 往來。另’於第2及第3熱處理部30、36亦可進行同樣的基 板搬送動作。 在第1熱處理部26接受上述一連串的熱或熱相關的處 理之基板G從下游乾燥塔(TB)48内之傳遞單元(pAS心)6〇移 16 1293579 运至下游相鄰之塗布製程部28的搬入單元(ιΝ)81，且從搬入 單元(IN)81移送至光阻塗布單元(CT)82。 在光阻塗布單元(CT)82中，基板G係如下所述藉由使用 縫隙型光阻噴嘴之旋轉塗布法將光阻液塗布於基板上面 5 (被處理面）。接著，基板G在下游相鄰之減壓乾燥單元 (VD)84接受藉由減壓所進行之乾燥處理（步驟心）。 已接受上述光阻塗布處理之基板(5從減壓乾燥單元 (VD)84搬入相鄰的第2熱處理部30之上游乾燥塔(13)88内 的傳遞單元(PASSL)。 10 在第2熱處理部30内，基板G藉由搬送機構9〇以預定順 序依序傳送至預疋單元。例如’基板G最初從傳遞單元 (PASSl)移送至加熱早元(PREBAKE)的其中一個，且於此接 受預焙之加熱處理（步驟SO。接著，基板G移送至冷卻單元 (COL)的其中一個’且於此冷卻至預定基板溫度（步驟s1〇)。 15然後，基板G經由下游乾燥塔(TB)92之傳遞單元(PASSR)， 或者不經過傳遞早元(PASSr)而傳送至介面站（i/f)i§之伸 展·冷卻台(EXT · COL)108。 在介面站（I/F)18中，基板G從伸展·冷卻台（EXT · COL)1〇8搬入周邊裝置11〇之周邊曝光裝置(EE)，且於此接 20 受用以去除顯像時附著於基板G周邊部的光阻之曝光，然 後，移送至相鄰的曝光裝置12(步驟sn)。 在曝光裝置12中，使預定電路圖案曝光於基板G上之光 阻。然後，當結束圖案曝光之基板G從曝光裝置12返回介面 站(I/F)18(步驟Sn)時，首先，將該基板G搬入周邊裝置110 17 1293579 之字幕編輯器（TITLER)，且於此在基板上之預定部位記錄 預定資訊(步驟Sn)。然後，基板G返回伸展·冷卻台（EXT · COL)108。基板G在介面站(I/F)18中的搬送及與曝光裝置12 傳送基板G的動作則藉由搬送裝置104來進行。 5 於製程站(p/S)16中，在第2熱處理部30中，搬送機構90 從伸展·冷卻台（EXT· COL)108接收曝光完畢之基板G，且 透過製程線B之乾燥塔(ΤΒ)92内的傳遞單元(PASSR)傳送至 顯像製程部32。 在顯像製程部32中，將從該乾燥塔(tb)92内的傳遞單 10 元(PASSR)接收之基板G搬入顯像單元(DEV)94。在顯像單 元(DEV)94中，基板g以連續線方式朝製程線b下游搬送， 並在該搬送中進行顯像、沖洗、乾燥之一連串的顯像處理 步驟(步驟S13)。 在顯像製程部3 2接受顯像處理之基板g以連續線方式 15朝下游相鄰之脫色製程部34搬入，且於此接受藉由照射1線 所進行之脫色處理（步驟Sm)。完成脫色處理的基板G則搬入 第3熱處理部36之上游乾燥塔（tb)98内的傳遞單元 (PASSL) 〇 在第3熱處理部36中，基板G最初從該傳遞單元(PASSl) 2〇移送至加熱單元(POBAKE)的其中一個，且於此接受後焙之 加熱處理(步驟Sy。接著，基板G移送至下游乾燥塔(TB)1〇2 内之傳遞·冷卻單元(PASSr · C0L)，且於此冷卻至預定基 板溫度(步驟S10)。基板G在第3熱處理部36中的搬送則藉由 搬送機構100來進行。 18 1293579 在匣盒站(C/S)14中，搬送機構22從第3熱處理部36之傳 遞·冷卻單元(PASSR · COL)接收已結束塗布顯像處理的所 有步驟之基板G，且將所接收之基板G收容於匣盒台2〇上之 任一匣盒C(步驟S〇。 5 在該塗布顯像處理系統1〇中，於塗布製程部28，特別 疋光阻塗布單元(CT)82可適用本發明。以下，參照第4圖〜 第12圖說明將本發明適用在塗布製程部28之一實施形態。 如第4圖所示，塗布製程部28係在支持台112上朝χ方向 (沿著製程線Α) —列地配置光阻塗布單元(CT)82與減壓乾 10燥單元(VD)84。沿著X方向延伸之一對引導執道114、114 係平行地舖設於支持台ι12的兩端部，且可藉由引導至兩引 導執道114 ' 114並於其上移動之一組或多組搬送臂部116、 116將基板G從光阻塗布單元(CT)82轉送至減壓乾燥單元 (VD)84。再者，兩引導軌道114、114係引進與塗布製程部 15 28相鄰接之上游及下游的單元，即，隸屬於第1熱處理部26 之下游乾燥塔(TB)48之傳遞單元(PASSr)與隸屬於第2熱處 理部30之上游乾燥塔(TB)88之傳遞單元(PASSL)，使搬送臂 部116、ία可進出於傳遞單元(PASSr)、（PASSl)。因此，可 藉由搬送臂部116、116，將塗布處理前之基板〇從乾燥塔 20 (TB)48之傳遞單元(passr)搬入光阻塗布單元(CT)82，且將 完成塗布處理之基板〇從減壓乾燥單元 σ—的傳遞翠元(圓L)。 乾^ 光阻塗布單元(CT)82包含可水平地載置且保持基板G 之機台118、可利用長條型光阻喷嘴12〇以旋轉塗布法將光 19 1293579 阻液塗布於載置於該機台118上之基板G上面（被處理面）之 塗布處理部122，及可將光阻噴嘴120的光阻液喷出功能維 持在正常狀態或恢復至正常狀態之喷嘴恢復部124等。光阻 塗布單元(CT)82内之各部的構造及作用則參照第5圖〜第12 5 圖在後面詳述。 減壓乾燥單元(VD)84包含上面呈開口狀態之淺盤或淺 底容器型下部腔室126及構成為可密閉地接合或嵌合於該 下部腔室126上面之蓋狀上部腔室（未圖示）。下部腔室^26 大致呈四角形，且在中心部配設用以水平地載置並支持基 10 板G之機台128,並在底面四角設置排氣口 13〇。各排氣口 13〇 係透過排氣管（未圖示)與真空泵(未圖示)相通。在上部腔室 覆蓋下部腔室126之狀態下，藉由該真空泵將兩腔室内形成 密閉之處理空間減壓至預定真空度。 第5圖係顯示光阻塗布單元(CT)82之塗布處理部122的 15構造。塗布處理部122包含具有光阻喷嘴12〇之光阻液供給 部132、在塗布處理時使光阻噴嘴12〇在機台118上方朝箭頭 方向(X-方向）水平移動，即，進行掃描之掃描部134。在光 阻液供給部132中，光阻喷嘴12〇具有以可覆蓋機台118上之 基板G的其中一端至另一端的長度朝γ方向延伸之長條狀 2〇喷嘴本體15()，且與來自光阻液供給源（未圖示）之光阻液供 給管136相連接。在喷嘴本體18〇之下端面形成有沿著噴嘴 長向（γ方向）延伸之縫隙狀喷出口 152。掃描部134包含水平 地支持光阻喷嘴120之逆:a字形之支持體138及可使該支持 體138朝X方向雙向前進移動之掃描驅動部14〇。該掃描驅動 20 1293579 部140可由例如具引導構件之線性馬達機構或滾珠螺桿機 構構成。在連接支持體138與光阻喷嘴120之接合部142宜設 置可變更或調節光阻喷嘴120的高度位置之具引導構件的 升降機構。藉由調節光阻喷嘴120的高度位置，可任意地設 5定或調整光阻喷嘴120之下端面或喷出口 152與機台118上 之基板G上面（被處理面）之間的距離間隔，即，間隙的大小。 第6圖及第7圖係顯示一實施例之光阻噴嘴120的構 造。該光阻噴嘴12〇之喷嘴本體150由例如不鏽鋼等抗鏽性 與加工性佳的金屬構成，且包含角筒狀之缓衝部154及朝下 ‘面之㉟出口 152從該緩衝部154延伸成錐狀之喷嘴部 156。設於緩衝部154内部之孔穴(未圖示)係形成暫時儲存從 光阻液供給管136導入的光阻液且使喷嘴長向的壓力均勻 之緩衝室。在噴嘴部152内部設有從緩衝室154内的孔穴朝 垂直下方延伸至下端的喷出口 152之縫隙狀流路ι58。 15 喷嘴部156中，在掃描方向（X-方向）後方或朝向相反側 的面’即’背面16〇形成有朝喷嘴長向延伸成水平或一直線 之段差部162。該段差部162包括：平坦的第1背面部164， 實質上朝向掃描方向後方，且從噴嘴部156之下端面後端朝 上方延伸至固定高度位置；平坦的第2背面部166，實質上 2〇朝向下方，且從該第1背面部164之上端朝掃描方向後方延 伸；及平坦的第3背面部168，實質上朝向掃描方向後方， 且從該第2背面部166之突出端朝上方延伸。該實施形態 中，第β面部164與水平面呈銳角⑷且朝上方延伸，同 時，第2背面部166從第！背面部164上端朝斜下方延伸成屋 21 1293579 簷狀，又，第3背面部168之下端設定在較第1背面部164之 上端略低的位置。另，在朝向喷嘴部156之掃描方向（X-方 向）前方的面，即，前面17〇並未設置相當於前述段差部162 的東西。 5 前述喷嘴背面160中之段差部162係如下所述，用以規 定塗布處理中之濕線WL，且可依照所使用之光阻液的表面 張力、黏度、喷嘴部156的形狀、光阻塗布膜的膜厚設定值 等，設定成適當的高度位置及段差大小，例如，可將第2背 面部166設定在從喷嘴下端算起0.2mm〜2.0mm的高度位 10 置’且寬度（突出量)設為0.2mm〜2.0mm。 於此，根據第5圖、第7圖及第8圖，說明上述光阻塗布 單元(CT)82之塗布處理部122的作用。塗布處理部122係在 基板G載置於機台118上時由控制部（未圖示）所進行的控制 之下動作。詳而言之，如第5圖所示，一面藉由掃描部j34 15使光阻噴嘴12〇如同在X-方向縱斷般以固定速度在機台118 上方掃描，一面在光阻液供給部132中，從光阻噴嘴12〇之 縫隙狀噴出口 152以沿著Y方向延伸之線狀喷出流將光阻液 R供給至機台118上之基板G上面。此時，如第7圖及第8圖 所示，噴至基板G上的光阻液R會由於濕潤現象而附著於光 2〇阻喷嘴120之喷嘴部156的背面160，且朝高度方向擴散（湧 起）’其頂部位置可藉由段差部162穩定或固定。如此一來， 濕潤光阻噴嘴120之噴嘴部156的背面160之光阻液汉的頂部 線，即，濕線WL可藉由段差部162來決定，藉此，在濕線 界£之下游中，形成於基板G上之光阻塗布膜RM的膜厚4可 22 !293579 固定地維持在期望值。又，如上所述，由於在藉由段差部 W2，嚴格說來，藉由屋簷狀的第2背面部166強制地抑制光 阻液R的頂部之形態下，在固定高度位置一直線地形成濕線 WL，故，即使段差部162附近有表面狀態不良之處，濕線 WL也不會不整齊，且可維持直線性。因此，不會發生在光 阻塗布膜RM上產生筋狀塗布不均的情形。 第9圖係顯示喷嘴恢復部124(第4圖）之一構造例。該喷 嘴恢復部124可設置於例如光阻噴嘴12〇之歸零位置，且具 有在上面設有可放入取出光阻喷嘴12〇之開口的長條狀筒 1〇型處理室172。在該處理室172中配置有用以將洗淨液(例如 稀釋劑）喷向收容於室内的預定位置之光阻噴嘴12〇的喷嘴 部156，特別是喷出口 152乃至於背面160之段差部162的洗 淨喷嘴174。該洗淨喷嘴174透過垂直支持構件176及水平支 持構件178，藉由洗淨喷嘴掃描機構18〇之掃描驅動，朝噴 15鳴長向（Y方向）水平移動，且在同方向將洗淨液喷至喷嘴部 156全部或主要部分的各個角落。使用完畢的洗淨液則從設 於處理室172底部的排放口 182送至廢液部（未圖示）。藉由該 喷嘴洗淨，可洗掉光阻喷嘴12〇之喷出口 152或附著在段差 部162附近的垃圾或固體光阻等。另，洗淨液供給線由來自 洗淨液供給源（未圖示）之洗淨液供給管184所構成，例如， 以筒狀體構成垂直支持構件176，且使洗淨液供給管184通 過其中，並與洗淨噴嘴174相連接。又，可在洗淨液供給管 184中間設置用以控制噴嘴洗淨的開與關之開關閥。洗 淨噴嘴掃描機構180可由例如具引導構件之滾珠螺桿機構 1293579 構成。 再者，在該喷嘴恢復部124中，亦 “ 喷出光阻液驗供給。此時，打開（開啟 5 10 136的開關閥188一段時間。藉由該假供給，可以某種：官 的確率除去光阻喷嘴120内部的堵塞。 〃各度 上述喷嘴恢復部124中之噴嘴洗淨機構只是1中— 例。例如，亦可使㈣由-面將浸透洗淨液的海錦狀 在光阻噴嘴⑽之喷嘴部156上—面朝噴嘴長向水平移^ 拭去喷嘴部156的髒污之方式的噴嘴洗淨機構。 又，雖省略圖示，但亦可藉由例如CCD攝像機等圖像 攝像機從絲喷嘴i默喷翁⑵的其巾—端掃描攝影至 另一端，且藉由圖像處理來檢查噴嘴部156的狀態，特別是 檢查有無光阻癖污或粒子附著等，並將檢查結果反饋至上 述喷嘴洗淨處理。 15 第10圖係顯示根據另一實施例之光阻喷嘴120的構 造。在該實施例之光阻喷嘴120中，與前述實施例（第6圖〜 第9圖）不同的點在於設於喷嘴部156的背面16〇之段差部 162的基本形態。即，從在喷嘴部156的背面16〇因濕潤現象 而朝高度方向擴散之光阻液來看，上述實施例（第6圖〜第9 20圖）之段差部162係以突出成屋簷狀以從上方遮蔽之段差構 造為基本形態，相對於此，該實施例（第1〇圖）之段差部162 則以溝狀且拉進内侧之段差構造為基本形態。 詳而言之，該實施例之段差部162包括：平坦的第1背 面部164，實質上朝向掃描方向後方，且從喷嘴部156之下 24 1293579 端面後^朝上方延伸至固定高度位置；平坦的第2背面部 166’ ’實質上朝向上方，且從該第丨背面部164上端朝掃描 方向刖方延伸，及平坦的第3背面部168，實質上朝向掃描 方向後方，且從該第2背面部166，之掃描方向前方端朝上方 5延伸。圖式的例子中’第2背面部166,係從第1背面部164上 端朝斜下方延伸，且第3背面部168下端設定在較第1背面部 164上端更低的位置。 藉由該溝狀段差部162,可以利用形成於第丨背面部164 與第2背面部166’之間的銳角角部來截斷光阻液在喷嘴部 10 156背面160朝高度方向的擴散之形態，使濕線説在固定高 度位置一直線地形成。另，越過該角部或濕線…乙的光阻液 則引導或收容至深處的溝部，以與第丨背面部164隔開。藉 此，該實施例中亦可得到沒有筋狀不均且具固定膜厚4之光 阻塗布膜RM。 15 本發明之光阻噴嘴12〇中之濕線用段差部162亦可作其 他各種變形。即，在上述基本形態，可選擇任何的段差形 成外形，例如，在屋簷型（第7圖）或溝型（第1〇圖）中皆可任 意地選擇第1及第2背面部164、166(166，)分別相對於水平面 的角度（絕對角度）或兩者之間的角度（相對角度）及分界位 2〇置。一般而言，屋簷型（第7圖）之段差部162以如上述實施例 使第2背面部166從第1背面部164上端朝斜下方延伸之形狀 為佳。但，亦可設為使第2背面部166大致水平地延伸之形 狀，亦可為使第2¾面部166朝斜上方延伸的形狀。同樣地， 溝型（第10圖）之段差部162亦可設為使第2背面部166，從第i 25 1293579 为面部164上端朝向掃描方向前方大致水平地延伸之形狀 或者朝斜上方延伸之形狀。 又，在上述實施形態中，在喷嘴部156的背面16〇中， 將用以規定濕線WL之物理性的分界部形成在段差部162。 5但，如第11圖所示，亦可根據表面狀態的不同將噴嘴部156 的背面160上下2分割為下部背面部16〇a與上部背面部 160B，且由兩背面部16〇A、16〇B之分界形成本發明之濕線 用分界部162。具體而言，例如，如第12圖所示，可將下部 背面部160A形成為粗糙的表面，並將上部背面部16〇B形成 1〇為光滑的表面。藉由該構造，可使光阻液在噴嘴部156的背 面160朝高度方向的擴散停留在粗糙表面之下部背面部 160A的領域，而不會朝光滑表面之上部背面部丨娜的領域 擴政藉此，可強制將濕線WL形成在分界部162的高度位 置。上述粗糙表面（160A)及光滑表面（16〇B)可由例如表面加 15 工來形成。 雖省略圖式，但其他較佳實施例亦可將下部背面部 160A形成為對光阻液呈親水性的表面，且將上部背面部 形成為對光阻液呈疏水性的表面。該親水性表面及疏 加水性表面可由例如塗布處理來形成。#，下部背面部⑽八 每P月面。卩160B宜形成為錐面。即，下部背面部16〇A可 K質上朝向掃描方向後方，且從喷嘴部I56之下端面後端朝 ^上方延伸至分界部162的高度位置，而上部背面部160Β 。成為下邛月面部160Α的延長，且從分界部162的高度位置 月斜上方延伸至適當的高度位置。下部背面部16GA與上部 26 1293579 背面部16〇B可為同-錐角，亦可為不同（在分界部i62彎 的錐角。 在上述實施形態中，以單向(X-方向）噴嘴掃描來進行 塗布處理，且在光阻喷嘴120之噴嘴部156中，在掃描方向 5後方或朝向相反侧的面（背面）160設置濕線用分界部H 且不在噴嘴156的前面170設置濕線用分界部162。此時，在 喷嘴部156的前面170可選擇舖開光阻液時適當的形狀外 形。但，當以雙向(X-方向、X+方向）嘴嘴掃描進行塗布處 理時，亦可在喷嘴部156的兩面160、17〇分別設置濕線用分 10界部162。又，本發明中之濕線用分界部162通常宜如上述 實施形悲朝喷嘴長向水平且一直線地延伸，但，亦可依= 同的應用’斜斜地延伸成-直線，或者彎曲地(例如，周邊 部較中心部高)延伸等。 上述實施形態係有關於具有縫隙狀噴出口之長條型塗 15布喷嘴，但，本發明亦可適用具有由配列於喷嘴長向之多 數小孔所構成之喷出口的長條型塗布噴嘴。又，上述實施 形態係有關於製造LCD之塗布顯像處理系統中之光阻塗布 裝置，但本發明可適用於可將塗布液供給至被處理基板上 的任何應用上。本發明中之塗布液除了光阻液以外，也包 20含例如層間絕緣材料、介電質材料、配線材料等各種塗布 液。本發明中之被處理基板並不限於LCD基板，也包含其 他平面面板顯示器用基板、半導體晶圓、CD基板、玻璃基 板、光掩模、印刷基板等。 【圖式簡單說明】 27 1293579 第1圖係顯示可適用本發明之塗布顯像處理系統的構 造之平面圖。 第2圖係顯示實施形態之塗布顯像處理系統之熱處理 部的構造之側視圖。 5 第3圖係顯示實施形態之塗布顯像處理系統之處理順 序的流程圖。 第4圖係顯示實施形態之塗布顯像處理系統之塗布製 程部之構造的上視圖。 第5圖係顯示實施形態之塗布製程部之塗布處理部的 10 構造。 第6圖係顯示根據其中一實施例之光阻喷嘴的外觀構 造之透視圖。 第7圖係顯示根據實施例之光阻喷嘴之主要部分的構 造與作用之部分截面側視圖。 15 第8圖係顯示根據實施例之光阻喷嘴的作用之透視圖。 第9圖係顯示根據實施例之喷嘴故障監測器的作用之 部分截面側視圖。 第10圖係顯示根據其他實施例之光阻喷嘴之主要部分 的構造與作用之部分截面側視圖。 20 第11圖係顯示根據其他實施例之光阻喷嘴之外觀構造 的透視圖。 第12圖係顯示根據實施例之光阻喷嘴之主要部分的構 造與作用之部分截面側視圖。 第13圖係顯示習知縫隙型光阻喷嘴之外觀構造與作用 1293579 的透視圖。 【圖式之主要元件代表符號表】 ίο...塗布顯像處理系統 12.. .外部曝光裝置 14.. .匣盒站 16.. .製程站 18.. .介面站 20.. .匣盒台 22…搬送機構 22a...搬送臂部 24.. .洗淨製程部 26…第1熱處理部 28.. .塗布製程部 30…第2熱處理部 32.. .顯像製程部 34.. .脫色製程部 36…第3熱處理部， 38.. .輔助搬送空間 40.. .往復搬運車 41…激分子UV照射單元 42.. .洗刷洗淨單元 44、48...乾燥塔 46.. .搬送機構 50.. .基板搬入用傳遞單元 52、54··.脫水烘焙用加熱單元 56…黏著單元 60.. .基板搬出用傳遞單元 62、64...基板溫度調整用冷卻 XJXi 一 早兀Create a floor plan. Fig. 2 is a side view showing the structure of a heat treatment portion of the coating development processing system of the embodiment. Fig. 3 is a flow chart showing the processing procedure of the coating development processing system of the embodiment. Fig. 4 is a top view showing the structure of a coating process portion of the coating development processing system of the embodiment. Fig. 5 is a view showing the structure of a coating treatment portion of a coating process portion of the embodiment. 9 Continuation of the construction of the nozzle according to the appearance of the nozzle of the embodiment - the side view of the photo-resistance and action portion according to the embodiment. Fig. 8 shows a photoresist according to an embodiment. Fig. 9 is a perspective view showing the operation, use, and the mouth of the nozzle according to the embodiment. Partial section side view. The main part of the nozzle which measures the action of Is. Fig. 10 is a partial cross-sectional side view showing the configuration and action according to other embodiments. 1 Fig. 11 shows a perspective view according to other embodiments. First, the structure of the main portion of the appearance of the nozzle is shown in Fig. 12 which is a partial cross-sectional side view showing the construction and action of the photoresist nozzle according to the embodiment. Figure 13 shows a perspective view. BEST MODE FOR CARRYING OUT THE INVENTION The preferred embodiment of the present invention is described below with reference to Figs. 1 to 12 to illustrate preferred embodiments of the present invention. Fig. 1 is a view showing a coating development process as a U example of a coating nozzle and a coating apparatus to which the present invention is applicable. The coating development processing system 10 is disposed on a bill of money, and is, for example, an LCD substrate as a substrate to be processed, and is subjected to cleaning, photoresist coating, prebaking, development, and subsequent in a lithography imaging step in an LCD manufacturing process. Bake a series of treatments. The exposure process is performed by an external exposure device 12 that is not placed adjacent to the processing system. 1293579 The coating development processing system ίο is provided with a horizontally long process station (P/S) 16 at the center, and a cassette station (c/S) 14 and an interface are arranged at both ends of the long direction (X-direction). Station (I/F) 18. The cassette station (C/S) 14 includes a cassette loading/unloading cassette as the system 1 and can accommodate a plurality of angular glass substrates G in a plurality of stages in a horizontal direction in the horizontal direction of the Y direction. The cassette 20 of the cassette C and the cassette C for carrying the substrate g into the cassette 20 and carrying out the transfer mechanism 22 of the substrate G from the cassette C. The transport mechanism 22 has a member that can hold the substrate G, for example, a transfer arm portion 22a that can operate on the Χ, γ, ζ, and 04 axes, and can be connected to an adjacent process station (P/S). 16 transfers the substrate G. The process station (P/S) 16 arranges each processing unit in a parallel and reverse pair of production lines A and B extending in the longitudinal direction (X-direction) of the system in accordance with the process flow or the sequence of steps. Specifically, the cleaning process unit 24 and the second heat treatment unit 26 are disposed in a row in the process line A from the package station (C/S) 14 toward the upstream portion of the interface station (i/f) 18. The coating process unit 28 and the second heat treatment unit 3 are coated. On the other hand, the second heat treatment unit 30, the development process unit 32, and the decoloring process are arranged in a row in the process line B from the interface station (I/F) 18 toward the downstream portion of the cassette station (C/S) 14. The portion 34 and the third heat treatment portion 36. In the production line configuration, the second heat treatment portion 30 is located at the end of the upstream process line A, and is located at the forefront of the downstream process 2 线 line B, and is disposed between the two production lines a and B. An auxiliary transport space 38 is provided between the two process lines A and B. The auxiliary transport space 38 allows the shuttle truck 40 on which the substrate cassette can be placed horizontally in a unit-by-sheet manner by a drive mechanism (not shown) in the production line direction. (乂—direction) moves in both directions. 11 1293579 In the upstream process line A, the cleaning process unit 24 includes a scrubbing cleaning unit MSCR 42 and is adjacent to the cassette station (c/s) io in the scrubbing unit (SCR) 42. Where the stimulator 11 ¥ irradiation unit Bu υ ) ν) 4 ι. The washing unit in the washing head unit (SCR) 42 can be washed by the roller conveyance or the belt 5 conveyance in the horizontal direction in the direction of the line A, and the washing is performed on the upper surface (the surface to be treated) or Blow. The second heat treatment unit 26 adjacent to the downstream of the cleaning process unit 24 is provided with a vertical transfer mechanism 中心 at the center portion along the process line A, and the front and rear two α are placed in multiple stages together with the substrate transfer transfer unit. A plurality of unit units or drying towers 44 and 48 composed of a plurality of plate-type drying units are laminated. For example, as shown in Fig. 2, the upstream drying tower (the squeezing system consists of a substrate transfer transfer unit (PASS1) 5 〇, dehydration baking heating units (DHP) 52, 54 and adhesion. The unit (AD) 56. Here, the transfer sheet Z (pasS1) 5G is provided to allow the substrate 0 from the cleaning unit (SCR) 42 and having completed the cleaning unit 15 to be carried into the space in the first heat treatment unit 26. The downstream drying tower (TB) 48 is provided with a substrate transfer transfer unit (PASSR) 60, a substrate temperature adjustment cooling unit (c〇L) 62, a material, and an adhesive unit (AD) 66 in this order. A transfer unit (PASSr) 6 is provided to transport the substrate G that has been subjected to the necessary heat treatment in the i-th heat treatment portion 26 to the space of the coating process portion "20. In Fig. 2, the transfer mechanism 46 includes an extension along the vertical direction. The lifting and lowering conveyance body 7 of the guide rail 68 can be moved up and down in the direction of rotation or rotation of the lifting and lowering body %, and the substrate G can be surface-supported on the rotary conveyance body 72. 12 1293579 : or pin " and 74 in the front and rear direction to retreat or retract The driving body 70 is driven at the end of the vertical guiding rail 68 for rotating the rotating conveying body 74, and the driving unit 80 for driving the conveying arm portion. It is attached to the rotary conveyer 72. Each of the drive units 76, 78, and 580 can be configured by, for example, an electric motor. The transport mechanism 46 configured as described above can be quickly moved up and down, or swiveled, and enters an adjacent drying tower (TB). In any of the 44th and 48th sheets, the transfer tray can be deleted from the reciprocating transporter on the side of the auxiliary transport space 38. The coating process unit 28 adjacent to the downstream of the first heat treatment unit 26 is, for example, 1st. As shown in the figure, a photoresist coating unit (CT) 82 #pressure dry unit (VD) 84 is disposed along the process line A-column. The structure of the coating process portion lake will be described in detail later. The second heat treatment unit 3 adjacent to the downstream side has the same structure as the first heat treatment unit of the uranium, and the second heat treatment unit 30 is provided with a vertical transfer mechanism 90 between the two 15 process lines A and B, and One of the drying towers (TB) 88 is provided on the process line (the last end) and is on the process line 6 (front The head is provided with another drying tower (TB) 92. Although the drawing is omitted, for example, the substrate carrying transfer unit (PASS1) may be disposed in the lowermost stage of the drying tower (TB) 88 on the process line A, and A pre-baked heating unit (PREBAKE) of, for example, three stages is stacked on the transfer unit (passl) of the substrate 20, and the substrate transfer can be carried out at the lowermost stage in the drying tower (TB) 92 on the process line 3. In the unit (PASSR), for example, a substrate temperature adjustment cooling unit (COL) is superimposed on the substrate carry-out transfer unit (PASSR), and a substrate temperature adjustment cooling unit ([〇1^) is laminated, for example, 2 13 Pre-baked heating unit (PREBAKE) of 1293579. The transport mechanism 90 of the second heat treatment unit 30 can transport the substrate G not only through the transfer units (PASSL) and (PASSR) of the two drying towers (TB) 82 and 92, but also in one unit and the coating processing unit 28 and the developing process unit 32. Alternatively, the substrate G may be transferred to the reciprocating truck 40 in the auxiliary transport space 38 or the interface station (I/F) 18 to be described later. In the process line B of the downstream portion, the developing process unit 32-side transfers the substrate G in a horizontal posture, and performs a series of development processing steps, and includes a so-called continuous line type developing unit (DEV) 94. The third heat treatment unit 36 is disposed downstream of the development processing unit 32 via the decoloring process unit 34. The decoloring process portion 34 includes an i-line UV irradiation unit (i - UV) 96 for irradiating the i-line (wavelength 365 nm) to the processed surface of the substrate G and performing decoloring treatment. The third heat treatment unit 36 has the same structure as the first heat treatment unit 26 or the second heat treatment unit 15 30 , and the third heat treatment unit 36 is provided with the vertical conveyance mechanism 100 along the process line B and a pair of drying towers on the front and rear sides thereof. (TB) 98, 102. Although the drawing is omitted, for example, a transfer unit (PASS1) may be provided in the lowermost drying tower (TB) 98 at the lowermost stage, and a heating unit (POBAKE) may be baked after stacking, for example, three stages. In addition, the downstream drying tower 20 (TB) 102 may be provided with a post-baking unit (POBAKE) at the lowermost stage, and a one-stage substrate carrying-out and cooling transfer/cooling unit (PASSR · COL) may be superimposed thereon and transferred. • The heating unit (POBAKE) is post-baked in two stages on the cooling unit (PASSR · COL). The transport mechanism 100 of the third heat treatment unit 36 can transmit not only the transfer unit (pASS1) and the transfer/cooling unit (PASSR·COL) of the two-stage unit 14 1293579 (ΤΒ) 98 and 102, but also the transfer line and the cooling unit (PASSR · COL). The irradiation unit 〇-UV) 96 and the cassette station (C/S) 14 transport the substrate G, and the substrate g may be transported in one unit and the shuttle truck 4 in the auxiliary transport space 38. The interface station (I/F) 18 has a transfer device 104 for transporting the substrate G to the adjacent exposure device 12, and is provided with a buffer table (BUF) 1〇6 and an extension/cooling station (EXT·). COL) 108 and peripheral devices no. A buffer type cassette (not shown) is provided in the buffer table (BUF) 106. The stretching/cooling stage (EXT·COL) 108 is a substrate transfer platform having a cooling function, and is used when the substrate G is transferred to the process station (P/S) 16. The peripheral device 11A can be, for example, a configuration of a top-down layered caption editor (TITLER) and a peripheral exposure device (EE). The conveying device 104 has a mechanism capable of holding the substrate G, for example, the transfer arm portion 104a, and can be transferred to the adjacent exposure device 12 or each unit (BUF) 106, (EXT · COL) 108, (TITLER/EE) 110 Substrate G. 15 Fig. 3 shows the processing sequence of the coating development processing system. First, in the cassette station (C/S) 14, the transport mechanism 22 takes out one of the substrates G from any of the cassettes C on the cassette deck 20, and carries the substrate G into the process station (p/s) 16 The laser irradiation unit (e-UV) 41 of the cleaning process unit 24 (step SJ) applies dry cleaning by irradiating ultraviolet rays to the substrate G in the ultraviolet irradiation unit (e-UV) 41 (step S2). In the ultraviolet cleaning, the organic matter on the surface of the substrate is mainly removed. After the ultraviolet cleaning is completed, the substrate G is transferred to the cleaning processing unit 24 by the transport mechanism 22 of the cassette station (C/S) 14. Washing and cleaning unit (SCR) 42. In the scrubbing cleaning unit (SCR) 42, as described above, the substrate is conveyed in a horizontal position in the horizontal direction by the roller 15 1293579 or conveyed in a horizontal position toward the process line A. The surface of the substrate G (the surface to be treated) is subjected to scrubbing or purging, thereby removing particulate dirt from the surface of the substrate (step S3). Then, the substrate G is transported in a continuous line after washing. Apply a rinse to the surface, and finally dry the substrate G with an air knife or the like. The substrate G that has been subjected to the cleaning process in the unit (SCR) 42 is carried into the transfer unit (PASSL) 50 in the upstream drying tower (TB) 44 of the first heat treatment unit 26. In the first heat treatment unit 26, the substrate G is used. The transport mechanism 46 is sequentially transported to the predetermined drying unit in a predetermined order of 10. For example, the substrate G is initially transferred from the transfer unit (PASSL) 50 to one of the heating units (DHP) 52, 54 and is subjected to dehydration processing there (step SO Then, the substrate is transferred to one of the cooling units (COL) 62, 64, and is cooled thereto to a predetermined substrate temperature (step S5). Then, the substrate G is transferred to the adhesive unit (AD) 56, and is subjected to the thinning 15 hydration treatment (step core). After the hydrophobization treatment, the substrate G is cooled to a predetermined substrate temperature in one of the cooling single tg (COL) 62, 64 (step S7). Finally, the substrate G is transferred to the downstream drying. In the first heat treatment unit 26, the substrate G can pass through the conveyor 20 in the upstream drying tower (TB) 44 and the downstream drying tower (TB) 48. Between the two, the second and third heat treatment units 30, 36 can also carry out the same The substrate transfer operation is performed. The substrate G that has received the above-described series of heat or heat related treatments in the first heat treatment unit 26 is transported from the transfer unit (pAS core) 6 in the downstream drying tower (TB) 48 to the downstream side. The loading unit 81 of the coating processing unit 28 is transferred from the loading unit (IN) 81 to the photoresist coating unit (CT) 82. In the photoresist coating unit (CT) 82, the substrate G is borrowed as follows. The photoresist liquid is applied onto the substrate top surface 5 (processed surface) by a spin coating method using a slit type photoresist nozzle. Next, the substrate G is subjected to a drying process (step core) by decompression at a downstream decompression drying unit (VD) 84. The substrate (5 passed from the reduced-pressure drying unit (VD) 84 into the upstream drying tower (13) 88 of the adjacent second heat treatment unit 30 has been subjected to the above-described photoresist coating treatment. In the portion 30, the substrate G is sequentially transferred to the pre-twisting unit by the transport mechanism 9 in a predetermined order. For example, the substrate G is initially transferred from the transfer unit (PASS1) to one of the heating elements (PREBAKE), and is accepted here. Pre-baked heat treatment (step SO. Next, the substrate G is transferred to one of the cooling units (COL)' and cooled thereto to a predetermined substrate temperature (step s1〇). 15 Then, the substrate G is passed through a downstream drying tower (TB) Passing unit (PASSR) of 92, or transmitting to the interface station (i/f) i§ stretching/cooling station (EXT · COL) 108 without passing the early pass (PASSr). In the interface station (I/F) 18 In the middle, the substrate G is carried into the peripheral exposure device (EE) of the peripheral device 11 from the stretching/cooling stage (EXT · COL) 1〇8, and the photoresist is attached to the peripheral portion of the substrate G when the connection is removed. The exposure is then transferred to the adjacent exposure device 12 (step sn). In the exposure device 12, the reservation is made. The road pattern is exposed to the photoresist on the substrate G. Then, when the substrate G that has finished the pattern exposure is returned from the exposure device 12 to the interface station (I/F) 18 (step Sn), first, the substrate G is carried into the peripheral device 110 17 A subtitle editor (TITLER) of 1293579, and the predetermined information is recorded on a predetermined portion on the substrate (step Sn). Then, the substrate G is returned to the stretching/cooling station (EXT · COL) 108. The substrate G is at the interface station (I/ The transfer and the transfer of the substrate G by the exposure device 12 in F) 18 are performed by the transfer device 104. 5 In the process station (p/S) 16, in the second heat treatment unit 30, the transfer mechanism 90 is stretched. The cooling stage (EXT·COL) 108 receives the exposed substrate G and transmits it to the developing process unit 32 through the transfer unit (PASSR) in the drying tower 92 of the process line B. In the developing process unit 32 The substrate G received from the transfer unit (PASSR) in the drying tower (tb) 92 is carried into the developing unit (DEV) 94. In the developing unit (DEV) 94, the substrate g is processed in a continuous line. The line b is transported downstream, and a series of development processing steps of development, rinsing, and drying are performed during the transfer (step S13). The substrate g that has undergone the development processing in the development processing unit 32 is carried in the continuous line 15 toward the downstream decoloring processing unit 34, and receives the decoloring treatment by the irradiation of one line (step Sm). The substrate G that has been subjected to the decoloring treatment is carried into the transfer unit (PASSL) in the upstream drying tower (tb) 98 of the third heat treatment unit 36. In the third heat treatment unit 36, the substrate G is first transferred from the transfer unit (PASS1). To one of the heating units (POBAKE), and thereafter subjected to post-baking heat treatment (step Sy). Next, the substrate G is transferred to the transfer/cooling unit (PASSr · C0L) in the downstream drying tower (TB) 1〇2, and is cooled to a predetermined substrate temperature (step S10). The conveyance of the substrate G in the third heat treatment unit 36 is performed by the conveyance mechanism 100. 18 1293579 In the cassette station (C/S) 14, the transport mechanism 22 receives the substrate G of all the steps of the coating development process from the transfer/cooling unit (PASSR·COL) of the third heat treatment unit 36, and The receiving substrate G is housed in any of the cassettes C on the cassette table 2 (step S〇. 5 in the coating development processing system 1〇, in the coating processing unit 28, in particular, the photoresist coating unit (CT) The present invention is applied to the present invention. Hereinafter, an embodiment in which the present invention is applied to the coating process unit 28 will be described with reference to Figs. 4 to 12. As shown in Fig. 4, the coating process portion 28 is attached to the support table 112. Direction (along process line Α) - a photoresist coating unit (CT) 82 and a decompression dry 10 (VD) 84 are arranged in a row. One of the guide lanes 114, 114 is laid in parallel along the X direction. At both ends of the support table ι12, the substrate G can be removed from the photoresist coating unit (CT) by guiding to the two guide tracks 114' 114 and moving one or more sets of transfer arms 116, 116 thereon. 82 is transferred to a reduced pressure drying unit (VD) 84. Further, the two guiding rails 114, 114 are introduced upstream of the coating process portion 15 28 and The unit that swims, that is, the transfer unit (PASSr) belonging to the downstream drying tower (TB) 48 of the first heat treatment unit 26 and the transfer unit (PASSL) of the upstream drying tower (TB) 88 belonging to the second heat treatment unit 30, The transfer arm portions 116 and ία can pass through the transfer units (PASSr) and (PASS1). Therefore, the transfer unit can be transferred from the drying tower 20 (TB) 48 by the transfer arm portions 116 and 116. (passr) is carried into the photoresist coating unit (CT) 82, and the substrate 〇 which has been subjected to the coating treatment is transferred from the decompression drying unit σ—the circle (circle L). The dry photoresist coating unit (CT) 82 contains horizontally The machine table 118 on which the substrate G is placed and held, and the light-blocking method 12 can be used to apply a light-blocking method to the substrate G placed on the machine table 118 by the spin coating method (the processed surface) The coating processing unit 122 and the nozzle recovery unit 124 that can maintain the photoresist liquid discharge function of the photoresist nozzle 120 in a normal state or return to a normal state. The structure of each part in the photoresist coating unit (CT) 82 And the function will be described later with reference to Fig. 5 to Fig. 12 5. The vacuum drying unit (VD) 84 is included a shallow tray or shallow bottom container type lower chamber 126 in an open state and a lid-shaped upper chamber (not shown) that is hermetically joined or fitted to the upper chamber 126. The lower chamber is substantially It has a quadrangular shape, and is provided at the center portion with a table 128 for horizontally placing and supporting the base 10 plate G, and an exhaust port 13 is provided at the four corners of the bottom surface. Each of the exhaust ports 13 is transmitted through the exhaust pipe (not The figure is connected to a vacuum pump (not shown). In a state where the upper chamber covers the lower chamber 126, the closed processing space in the two chambers is decompressed to a predetermined degree of vacuum by the vacuum pump. Fig. 5 shows the structure of the coating processing portion 122 of the photoresist coating unit (CT) 82. The coating processing unit 122 includes the photoresist liquid supply unit 132 having the photoresist nozzle 12, and horizontally moves the photoresist nozzle 12 in the arrow direction (X-direction) above the machine 118 during the coating process, that is, performs scanning. Scanning unit 134. In the photoresist supply unit 132, the photoresist nozzle 12A has an elongated 2-inch nozzle body 15 () extending in the γ direction so as to cover the length from one end to the other end of the substrate G on the stage 118, and It is connected to a photoresist supply pipe 136 from a photoresist supply source (not shown). A slit-like discharge port 152 extending in the longitudinal direction (γ direction) of the nozzle is formed on the lower end surface of the nozzle body 18A. The scanning unit 134 includes a support 138 that horizontally supports the inverse of the resistive nozzle 120: an a-shape, and a scanning drive unit 14 that can move the support 138 in the X direction. The scan drive 20 1293579 portion 140 can be constructed, for example, by a linear motor mechanism with a guide member or a ball screw mechanism. Preferably, the joint portion 142 of the connection support 138 and the resistive nozzle 120 is provided with an elevating mechanism having a guide member that can change or adjust the height position of the resist nozzle 120. By adjusting the height position of the photoresist nozzle 120, the distance between the lower end surface of the photoresist nozzle 120 or the discharge port 152 and the upper surface (processed surface) of the substrate G on the machine table 118 can be arbitrarily set. That is, the size of the gap. Fig. 6 and Fig. 7 show the construction of the photoresist nozzle 120 of an embodiment. The nozzle body 150 of the photoresist nozzle 12 is made of a metal having excellent rust resistance and workability such as stainless steel, and includes a corner-shaped buffer portion 154 and a downward-facing surface 35 outlet 152 extending from the buffer portion 154. A tapered nozzle portion 156. The cavities (not shown) provided inside the buffer portion 154 form a buffer chamber for temporarily storing the photoresist liquid introduced from the photoresist liquid supply tube 136 and making the nozzle longitudinally uniform. Inside the nozzle portion 152, a slit-like flow path ι 58 which is formed from the hole in the buffer chamber 154 to the lower end of the discharge port 152 is provided. In the nozzle portion 156, a step portion 162 that extends horizontally or in a straight line toward the nozzle is formed on the surface of the back surface 16' behind the scanning direction (X-direction) or the opposite side. The step portion 162 includes a flat first back surface portion 164 which is substantially rearward in the scanning direction and extends upward from the rear end surface of the lower surface of the nozzle portion 156 to a fixed height position. The flat second back surface portion 166 is substantially 2 The crucible faces downward and extends rearward from the upper end of the first back surface portion 164 in the scanning direction; and the flat third back surface portion 168 substantially extends rearward in the scanning direction and extends upward from the protruding end of the second back surface portion 166 . In this embodiment, the β-th face portion 164 extends at an acute angle (4) from the horizontal plane and extends upward, and the second back surface portion 166 is from the first! The upper end of the back surface portion 164 extends obliquely downward to form a housing 21 1293579, and the lower end of the third back surface portion 168 is set at a position slightly lower than the upper end of the first back surface portion 164. Further, the surface facing the scanning direction (X-direction) of the nozzle portion 156, that is, the front surface 17 is not provided with the portion corresponding to the step portion 162. 5 The step portion 162 in the nozzle back surface 160 is as follows to define the wet line WL in the coating process, and may be in accordance with the surface tension of the photoresist liquid used, the viscosity, the shape of the nozzle portion 156, and the photoresist coating. The film thickness setting value or the like of the film is set to an appropriate height position and a step size. For example, the second back surface portion 166 can be set at 0 from the lower end of the nozzle. 2mm~2. The height position of 0mm is set to 'set' and the width (protrusion amount) is set to 0. 2mm~2. 0mm. Here, the action of the coating processing unit 122 of the photoresist coating unit (CT) 82 will be described based on Fig. 5, Fig. 7, and Fig. 8. The coating processing unit 122 operates under control by a control unit (not shown) when the substrate G is placed on the machine table 118. More specifically, as shown in FIG. 5, the photoresist nozzle 12 is scanned by the scanning portion j34 15 at a fixed speed as above in the X-direction, and is scanned in the photoresist supply portion at a fixed speed. In 132, the slit-shaped discharge port 152 of the photoresist nozzle 12 is supplied with a linear discharge flow extending in the Y direction to supply the photoresist R to the upper surface of the substrate G on the stage 118. At this time, as shown in FIGS. 7 and 8, the photoresist R sprayed onto the substrate G adheres to the back surface 160 of the nozzle portion 156 of the light-blocking nozzle 120 due to the wetting phenomenon, and diffuses in the height direction. (Emerging) 'The top position thereof can be stabilized or fixed by the step portion 162. In this way, the top line of the photoresist liquid on the back surface 160 of the nozzle portion 156 of the wet photoresist nozzle 120, that is, the wet line WL can be determined by the step portion 162, thereby being in the downstream of the wet line boundary The film thickness 4 of the photoresist coating film RM formed on the substrate G can be fixedly maintained at a desired value by 22!293579. Further, as described above, in the form of the step portion W2, strictly speaking, the second back surface portion 166 of the eaves shape forcibly suppresses the top portion of the resist liquid R, and the wet line is formed linearly at the fixed height position. Since WL is present, even if there is a surface state defect near the step portion 162, the wet line WL is not untidy and linearity can be maintained. Therefore, the occurrence of uneven coating of the ribs on the photoresist coating film RM does not occur. Fig. 9 is a view showing a configuration example of one of the nozzle restoring portions 124 (Fig. 4). The nozzle recovery portion 124 may be disposed, for example, at a return-to-zero position of the photoresist nozzle 12, and has a long cylindrical processing chamber 172 having an opening into which the photoresist nozzle 12 can be placed. The processing chamber 172 is provided with a nozzle portion 156 for ejecting a cleaning liquid (for example, a diluent) to the photoresist nozzle 12A at a predetermined position accommodated in the chamber, in particular, the discharge port 152 or the step portion 162 of the back surface 160. Wash nozzle 174. The cleaning nozzle 174 passes through the vertical support member 176 and the horizontal support member 178, and is driven by the cleaning of the cleaning nozzle scanning mechanism 18 to horizontally move in the (Y direction) toward the jet 15 and to wash the cleaning liquid in the same direction. Sprayed to all corners of the nozzle portion 156 all or a major portion. The used cleaning liquid is sent to the waste liquid portion (not shown) from the discharge port 182 provided at the bottom of the processing chamber 172. By washing the nozzle, the discharge port 152 of the photoresist nozzle 12 or the garbage or solid photoresist attached to the vicinity of the step portion 162 can be washed away. Further, the cleaning liquid supply line is constituted by a cleaning liquid supply pipe 184 from a cleaning liquid supply source (not shown). For example, the vertical support member 176 is formed of a cylindrical body, and the cleaning liquid supply pipe 184 is passed. Therein, it is connected to the washing nozzle 174. Further, an on-off valve for controlling opening and closing of the nozzle cleaning may be provided in the middle of the cleaning liquid supply pipe 184. The cleaning nozzle scanning mechanism 180 may be constituted by, for example, a ball screw mechanism 1293579 having a guiding member. Further, in the nozzle restoring portion 124, the photoresist liquid supply is also ejected. At this time, the opening and closing of the on-off valve 188 of 5 10 136 is performed for a while. With the false supply, it is possible to: a certain degree of accuracy The clogging inside the photoresist nozzle 120 is removed. The nozzle cleaning mechanism in the above-described nozzle restoring portion 124 is only one example. For example, the fourth surface may be impregnated with the cleaning liquid by the - surface. The nozzle portion 156 of the nozzle (10) is a nozzle cleaning mechanism that moves horizontally toward the nozzle length and wipes off the dirt of the nozzle portion 156. Although not shown, an image such as a CCD camera may be used. The camera scans from the towel end of the wire nozzle i (M) to the other end, and checks the state of the nozzle portion 156 by image processing, in particular, checks for the presence or absence of photoresist stains or particle adhesion, and will check The result is fed back to the nozzle cleaning process described above. 15 Fig. 10 shows the configuration of the photoresist nozzle 120 according to another embodiment. In the photoresist nozzle 120 of this embodiment, the foregoing embodiment (Fig. 6 to ninth) The difference is that it is provided on the back side of the nozzle portion 156. The basic form of the step portion 162 of 6 。. That is, the above-described embodiment (Fig. 6 to Fig. 9 20) is seen from the photoresist liquid which is diffused in the height direction due to the wetting phenomenon on the back surface 16 of the nozzle portion 156. The step portion 162 is formed in a shape that protrudes from the upper portion so as to be blocked from the upper portion, and the step portion 162 of the first embodiment has a groove shape and is inserted into the inner step. In other words, the step portion 162 of this embodiment includes a flat first back surface portion 164 which is substantially rearward in the scanning direction and extends from the lower surface of the nozzle portion 156 24 1293579 to the upper portion to the fixed height position. The flat second back surface portion 166 ′′ is substantially upward, and extends from the upper end of the second back surface portion 164 in the scanning direction, and the flat third back surface portion 168 is substantially rearward in the scanning direction. In the second back surface portion 166, the front end in the scanning direction extends upward. In the example of the drawing, the second back surface portion 166 extends obliquely downward from the upper end of the first back surface portion 164, and the lower end of the third back surface portion 168 is set at Upper end of the first back portion 164 The groove-like step portion 162 can cut off the photoresist liquid in the height direction from the back surface 160 of the nozzle portion 10 156 by the acute angle portion formed between the second back surface portion 164 and the second back surface portion 166'. The form of diffusion causes the wet line to be formed in a straight line at a fixed height position. In addition, the photoresist liquid that passes over the corner or the wet line is guided or received to the deep groove portion to be separated from the second back portion 164. Thus, in this embodiment, a photoresist coating film RM having no unevenness and having a fixed film thickness of 4 can be obtained. 15 The wet line step portion 162 of the photoresist nozzle 12 of the present invention can also be used. Other various modifications, that is, in the above basic form, any step can be selected to form an outer shape. For example, the first and second back faces can be arbitrarily selected in the eaves type (Fig. 7) or the groove type (Fig. 1). The angles (absolute angles) of the portions 164, 166 (166,) with respect to the horizontal plane, or the angles (relative angles) between the two, and the boundary 2 are respectively set. In general, the step portion 162 of the eave type (Fig. 7) preferably has a shape in which the second back surface portion 166 extends obliquely downward from the upper end of the first back surface portion 164 as in the above embodiment. However, the second back surface portion 166 may be formed to extend substantially horizontally, or the second surface portion 166 may be formed to extend obliquely upward. Similarly, the step portion 162 of the groove type (Fig. 10) may be such that the second back surface portion 166 extends from the upper end of the face portion 164 toward the front side in the scanning direction or extends obliquely upward from the i 25 1293579. shape. Further, in the above embodiment, the boundary portion 162 for defining the physical property of the wet line WL is formed in the back surface 16 of the nozzle portion 156. 5, as shown in Fig. 11, the back surface 160 of the nozzle portion 156 may be divided into the lower back portion 16a and the upper back portion 160B depending on the surface state, and the back portions 16A and 16 may be divided. The boundary of 〇B forms the boundary portion 162 for the wet line of the present invention. Specifically, for example, as shown in Fig. 12, the lower back surface portion 160A can be formed into a rough surface, and the upper back surface portion 16B can be formed into a smooth surface. With this configuration, the diffusion of the photoresist liquid in the height direction of the back surface 160 of the nozzle portion 156 can be stopped in the field of the lower surface portion 160A of the rough surface without expanding the area toward the back surface of the smooth surface. Thereby, the wet line WL can be forcibly formed at the height position of the boundary portion 162. The above rough surface (160A) and smooth surface (16〇B) can be formed by, for example, surface work. Although the drawings are omitted, the other preferred embodiments may form the lower back surface portion 160A as a surface that is hydrophilic to the photoresist, and the upper back portion may be formed as a surface that is hydrophobic to the photoresist. The hydrophilic surface and the water-repellent surface may be formed by, for example, a coating treatment. #, lower back part (10) eight per P month.卩160B should be formed as a tapered surface. That is, the lower rear surface portion 16A can be made to be rearward in the scanning direction, and extends from the rear end surface of the lower surface of the nozzle portion I56 toward the upper side of the nozzle portion I to the height position of the boundary portion 162, and the upper rear surface portion 160B. It is an extension of the lower face of the lower moon, 160 ,, and extends from the height position of the boundary portion 162 to the appropriate height position. The lower back portion 16GA and the upper portion 26 1293579 and the back portion 16B may have the same-cone angle or may be different (the taper angle bent at the boundary portion i62. In the above embodiment, the one-way (X-direction) nozzle scan is used. In the nozzle portion 156 of the resist nozzle 120, the wet line boundary portion H is provided on the surface (back surface) 160 behind the scanning direction 5 or the opposite side, and the wet line is not provided in the front surface 170 of the nozzle 156. The boundary portion 162. At this time, the front surface 170 of the nozzle portion 156 can be selected to have an appropriate shape and shape when the photoresist is spread. However, when the coating process is performed by scanning in both directions (X-direction, X+ direction), it is also possible to The wetted line boundary portion 162 is provided on both sides 160, 17 of the nozzle portion 156. Further, the wet line boundary portion 162 in the present invention is preferably extended to the horizontal and straight line as described above. It can also be extended obliquely to a straight line according to the same application, or curved (for example, the peripheral portion is higher than the central portion), etc. The above embodiment relates to a long strip coating having a slit-like discharge port. Cloth nozzle, however, the invention is also applicable There is a long coating nozzle having a discharge port formed by a plurality of small holes arranged in the longitudinal direction of the nozzle. Further, the above embodiment relates to a photoresist coating device in a coating development processing system for manufacturing an LCD, but the present invention can be It is suitable for any application in which the coating liquid can be supplied onto the substrate to be processed. The coating liquid in the present invention contains, in addition to the photoresist liquid, various coating liquids such as an interlayer insulating material, a dielectric material, and a wiring material. The substrate to be processed in the present invention is not limited to an LCD substrate, and includes a substrate for a flat panel display, a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed substrate, etc. [Simplified illustration] 27 1293579 1 The figure shows a plan view showing the structure of the coating development processing system to which the present invention is applied. Fig. 2 is a side view showing the structure of the heat treatment portion of the coating development processing system of the embodiment. 5 Fig. 3 shows the coating of the embodiment. Flowchart of the processing sequence of the development processing system. Fig. 4 is a top view showing the construction of the coating process portion of the coating development processing system of the embodiment. Fig. 5 is a view showing a structure of a coating processing portion of a coating process portion of the embodiment. Fig. 6 is a perspective view showing an appearance configuration of a photoresist nozzle according to an embodiment. Fig. 7 is a view showing an embodiment according to an embodiment. Partial cross-sectional side view of the construction and function of the main portion of the photoresist nozzle. Fig. 8 is a perspective view showing the action of the photoresist nozzle according to the embodiment. Fig. 9 is a view showing the nozzle failure monitor according to the embodiment. Partial cross-sectional side view of the function. Fig. 10 is a partial cross-sectional side view showing the configuration and function of the main portion of the photoresist nozzle according to other embodiments. 20 Fig. 11 shows the appearance configuration of the photoresist nozzle according to other embodiments. Fig. 12 is a partial cross-sectional side view showing the configuration and action of a main portion of a photoresist nozzle according to an embodiment. Figure 13 is a perspective view showing the appearance and function of a conventional slit type photoresist nozzle 1293579. [The main components of the diagram represent symbol tables] ίο. . . Coating development processing system 12. . . External exposure device 14. . . 匣 box station 16. . . Process station 18. . . Interface station 20. . . 匣 box 22... transport mechanism 22a. . . Transfer arm 24. . . Cleaning process unit 26... first heat treatment unit 28. . . Coating process section 30...second heat treatment section 32. . . Imaging process department 34. . . Decoloring process section 36...3rd heat treatment section, 38. . . Auxiliary transport space 40. . . Reciprocating truck 41...excimer UV irradiation unit 42. . . Washing and cleaning unit 44, 48. . . Drying tower 46. . . Transport agency 50. . . Substrate loading unit 52, 54··. Dehydration baking heating unit 56...adhesive unit 60. . . Substrate carry-out transfer unit 62, 64. . . Substrate temperature adjustment cooling XJXi
66…黏著單元 68·.·引導軌道 70.. .升降搬送體 72…迴轉搬送體 74.. .銷組件 76、78、80···驅動部 81…搬入單元 82…光阻塗布單元66...Adhesive unit 68·.· Guide rail 70.. Lifting transport body 72... Rotary transport body 74.. Pin assembly 76, 78, 80···Drive unit 81... Carry-in unit 82...Photoresist coating unit
84.··減壓乾燥單元 88、92、98、102…乾燥塔 90…搬送機構 94…顯像單元 96.. .1.UV照射單元 100…光阻喷嘴 100a...光阻喷嘴背面下部、光 阻喷嘴表面 102···不良處 29 1293579 104…塗布不均 156...喷嘴部 104...搬送裝置 158…流路 104a...搬送臂部 160···背面 106...缓衝台 162、165·.·段差部 108…伸展·冷卻台 164…第1背面部 110...周邊裝置 166、166’·.·第2背面部 112...支持台 168…第3背面部 114…引導執道 170·.·前面 116...搬送臂部 172...處理室 118、128…機台 174…洗淨喷嘴 120.·.光阻喷嘴 176...垂直支持構件 122…塗布處理部 178...水平支持構件 124...喷嘴恢復部 180…喷嘴本體 126...下部腔室 182…排放口 130…排氣口 184...洗淨液供給管 132...光阻液供給部 186、188··.開關閥 134…掃描部 G...基板 136...光阻液供給管 C...匣盒 138...支持體 A、B...生產線、製程線 140...掃描驅動部 WL...濕線 142...接合部 R...光阻液 150…喷嘴本體 RM...光阻塗布膜 152···喷出口 d...膜厚 154...緩衝部 X—、X+...搬送方向 3084.·Decompression drying unit 88, 92, 98, 102... drying tower 90... conveying mechanism 94... developing unit 96..1. UV irradiation unit 100... photoresist nozzle 100a... lower surface of photoresist nozzle Photoreceptor nozzle surface 102···Bad place 29 1293579 104...Coating unevenness 156...Nozzle part 104...Transporting device 158...Flow path 104a...Transport arm unit 160···Back surface 106... Cushioning table 162, 165, ..., step portion 108, stretching, cooling table 164, first back portion 110, peripheral device 166, 166', ..., second back portion 112, support table 168, ... Back surface 114... Guided road 170·. Front side 116...Transport arm unit 172...Processing chamber 118,128...Machining station 174...Washing nozzle 120.·.Resistance nozzle 176...Vertical supporting member 122...coating treatment unit 178...horizontal support member 124...nozzle recovery unit 180...nozzle body 126...lower chamber 182...discharge port 130...exhaust port 184...cleaning liquid supply pipe 132. .. photoresist liquid supply unit 186, 188··. switching valve 134... scanning unit G... substrate 136... photoresist liquid supply tube C... cassette 138... support A, B.. Production line, process line 140...scan drive Moving part WL...wet line 142...joining part R...resistance liquid 150...nozzle body RM...photoresist coating film 152···discharge port d...film thickness 154...buffer Department X—, X+... transport direction 30