1292000 A7 B7 五、發明説明（彳） 技術領域 本發明係關於半導體積體電路等之製造裝置所用的電 鍍處理裝置。 背景技術 隨著攜帶資訊終端機等電子機器之小型輕量化的進行 ，呼應之，對於該等機器所組裝半導體積體電路本身，亦 要求其小型輕量化、高密度實裝化。 作爲達成半導體積體電路等（以下稱爲半導體裝置） 之小型化、高密度實裝化的有力方法，乃有在半導體裝置 表面之所定位置，利用電鍍技術以金（A u )予以形成所 謂凸塊電極，並使用該凸塊電極將半導體裝置直接安裝於 實裝基板之方法，則廣泛地利用。 圖3爲顯示習知所用電鍍處理裝置之槪要。 在圖3，5 1爲儲存槽、5 2爲電鍍處理槽、5 3爲 緩衝槽、5 4爲循環泵、5 5爲浮子式流量計、5 6爲過 濾器、5 7爲熱交換單元、5 8爲配管。儲存槽5 1、電 鑛處理槽5 2、緩衝槽5 3、熱交換單元5 7、配管5 8 之材料卻使用樹脂系材料。 在循環泵5 4加壓之電鑛液係流入於儲存槽5 1。注 入於儲存槽5 1之電鍍液，乃在儲存槽5 1被調整其流速 ’以所定流速（液體自重）流入於其次之電鍍處理槽5 2 。接著，電鍍液自電鍍處理槽5 2排出口流入於緩衝槽 5 3 ’再於循環泵5 4被加速，而流入於儲存槽5 1。 ，查紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) r 經*濟部智慧財產局員工消費合作社印製 -4 1292000 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（2) 在進行電鍍液循環時，有時由於循環泵5 4之空泡現 象會在電鍍液中發生氣泡。當該氣泡附著於基板表面時， 其爲原因被阻礙電鍍成長，最壞時竟發生電鍍異常（電鍍 厚度之異常或電鍍形狀不良）。爲消除該氣泡，例如將在 循環泵5 4加壓之電鍍液一旦予以流入儲存槽，經把液體 中之氣泡放出於大氣中後，未進行電鍍液加壓，即藉液體 自重使其流入於電鍍處理槽5 2。 進行電鍍時，爲了控制金屬析出速度及基板上之析出 速度均勻性、即控制電鍍厚度而言，電鍍液之流量控制、 電鍍液之溫度控制亦是重要的因素。 電鍍液之流量測定，乃在儲存槽5 1至電鍍處理槽 5 2之配管途中，裝設浮子式流量計5 5，以控制流量。 電鍍液之溫度控制，則在緩衝槽5 3中，設置熱交換單元 5 7 (將溫水循環於樹脂製捆綁之管子內予以間接性調溫 =溫度調節）以進行浸漬。 當進行電鍍時，有時由於電鍍液之性質，致基板上所 定位置以外、例如電鍍液循環配管、循環泵或電鍍槽本身 等亦會析出電鍍金屬。該等析出於所定位置以外之金屬一 部分，係自析出處所剝離成爲異物浮游於電鍍液中，並隨 著電鍍液之流動而移動於電鍍處理裝置中。當該異物附著 於基板表面時，其即成爲原因，最壞時會發生電鍍異常（ 電鍍厚度之異常、或電鍍形狀不良）。爲除去該異物’例 如在循環栗之後予以裝設過 '濾器5 6。又，如圖3所τ ’ 在電鍍處理槽5 2直前亦予以裝設過濾器5 6。 本二紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) ，裝· 訂 «- -5- 1292000 A7 ___B7 五、發明説明（3) (請先閲讀背面之注意事項再填寫本頁) 浮游於電鍍液中之異物，雖使用過濾器加以除去，惟 沉積固結於電鍍處理槽等內壁之析出物卻無法在過濾器除 去之。該等析出物由於具有堵塞配管、發生異物數增加等 不妥之可能性，因此需使用鹵系藥液（王水、碘等），定 期性加以洗滌。 以往，乃如是有困難將電鍍處理中以異物所發生電鍍 物質之析出容易又有效地加以控制之問題。 發明之開示 本發明即鑑於上述問題予以開發者，其目的爲提供一 種：能容易且有效地抑制在電鍍處理中以異物所發生電鍍 物質之析出的電鍍處理裝置。 經濟部智慧財產局員工消費合作社印製 爲達成上述目的，本發明有關之電鍍處理裝置，係爲 在供應含電鍍物質之電鍍液，.藉該電鍍液接觸於電鍍對象 物以進行該電鍍對象物之電鍍，同時當非所盼位置析出電 鍍物質時即利用除去劑加以除去該電鍍物質之電鍍處理裝 置’而以：將電鍍處理裝置之與電鍍液接觸的至少一部分 ’使用促使除去劑作用時以相同條件測定之表面粗糖變化 率比樹脂低的材料所形成爲特徵。 藉上述構成，由於與電鍍液接觸的至少一部分，使用 促使除去劑作用時以相同條件測定之表面粗糙變化率比樹 脂低的材料所形成。 因此’在進行電鍍處理，於非所盼位置析出電鍍物質 時’促使上述除去劑作用時以如上述材料所形成之與上述 _氏張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ϊ*ϊ·Γν — -6 - 1292000 A7 B7 五、發明説明（4) 電鍍液接觸部分，其表面比起由樹脂形成時不易粗糙。且 由於表面不易粗糙，相對地可抑制因其表面粗糙所成凹凸 致使電鍍物質之析出加速。 是故，能容易且有效地控制在電鍍處理中以異物所發 生電鍍物質之析出。 又，本發明之電鍍處理裝置，除了上述構成外，更加 具有使電鍍對象物接觸於電鑛液之電鍍處理槽，且上述電 鍍處理槽壁面，由促使除去劑作用時以相同條件測定之表 面粗糙變化率比樹脂低的材料所形成爲特徵。 藉上述構成，由於電鍍處理槽壁面，使用促使除去劑 作用時以相同條件測定之表面粗糙變化率比樹脂低的材料 加以形成。因此，除了上述構成所致效果外，更加能容易 且有效地控制在電鍍處理中以異物所發生電鍍物質之析出 〇 又，本發明之電鍍處理裝置，除了上述構成外，更具 有使電鍍對象物接觸於電鍍液之電鍍處理槽、與向上述電 鍍處理槽輸送電鍍液之電鍍處理槽用配管，且上述電鍍處 理槽用配管之壁面，由促使除去劑作用時以相同條件測定 之表面粗糙變化率比樹脂低的材料所形成爲特徵。 藉上述構成，由於將電鍍處理槽用配管之壁面，使用 促使除去劑作用時以相同條件測定之表面粗糙變化率比樹 脂低的材料加以形成。因此，除了上述構成所致效果外， 更加能容易且有效地控制在電鍍處理中以異物所發生電鍍 物質之析出。 条|氏張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) •裝· 訂 經濟部智慧財產局員工消費合作社印製 1292000 A7 B7 五、發明説明（5) 又，本發明之電鍍處理裝置，除了上述構成外，更具 有使電鍍對象物接觸於電鍍液之電鍍處理槽、與可儲存被 裝入於上述上述電鍍處理槽之電鍍液的儲存槽，且上述儲 存槽之壁面，由促使除去劑作用時以相同條件測定之表面 粗糙變化率比樹脂低的材料所形成爲特徵。 藉上述構成，由於將儲存槽之壁面，使用促使除去劑 作用時以相同條件測定之表面粗糙變化率比樹脂低的材料 加以形成。因此，除了上述構成所致效果外，更加能容易 且有效地控制在電鍍處理中以異物所發生電鍍物質之析出 〇 又，本發明之電鍍處理裝置，除了上述構成外，更具 有其內部被裝入上述儲存槽，且以熱傳導對儲存槽內之電 鍍液進行加熱的加熱槽爲特徵。 藉上述構成，由於以熱傳導加熱儲存槽內之電鍍液。 因此，不必爲溫度調節而以熱交換單元使用直接接觸於電 鑛液之構件。是故，可更加容易且有效地控制在電鍍處理 中以異物所發生電鍍物質之析出。 又，本發明之電鍍處理裝置，除了上述構成外，更具 有使電鍍對象物接觸於電鍍液之電鍍處理槽、與向上述電 鍍處理槽輸送電鍍液之電鍍處理槽用配管，且在上述電鍍 處理槽用配管一部分配置超音波式流量計，而上述電鍍處 理槽用配管中被配置上述超音波式流量計之部位的壁面， 由促使除去劑作用時以相同條件測定之表面粗糙變化率比 樹脂低的材料所形成爲特徵。 、夺^氏張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先聞讀背面之注意事項再填寫本頁) -裝·1292000 A7 B7 V. Technical Description The present invention relates to an electroplating processing apparatus used in a manufacturing apparatus of a semiconductor integrated circuit or the like. Background Art As electronic devices such as information terminal devices are reduced in size and weight, it is required to be compact, lightweight, and high-density for the semiconductor integrated circuit itself assembled by such devices. As a powerful method for achieving miniaturization and high-density mounting of a semiconductor integrated circuit or the like (hereinafter referred to as a semiconductor device), a so-called convex is formed by gold (A u ) at a predetermined position on the surface of the semiconductor device by a plating technique. A bulk electrode and a method of directly mounting a semiconductor device on a mounting substrate using the bump electrode are widely used. Fig. 3 is a view showing a conventional plating treatment apparatus used. In Fig. 3, 51 is a storage tank, 52 is a plating treatment tank, 53 is a buffer tank, 54 is a circulation pump, 55 is a float type flowmeter, 56 is a filter, 57 is a heat exchange unit, 5 8 is piping. The material of the storage tank 5 1 , the ore treatment tank 5 2 , the buffer tank 5 3 , the heat exchange unit 5 7 , and the piping 5 8 is made of a resin material. The electric ore which is pressurized by the circulation pump 54 flows into the storage tank 51. The plating solution injected into the storage tank 5 1 is adjusted in the storage tank 51 to have its flow rate 'flowed at the predetermined flow rate (liquid weight) to the next plating treatment tank 5 2 . Then, the plating solution flows into the buffer tank 5 3 ' from the discharge port of the plating bath 5 2 and is accelerated by the circulation pump 54 to flow into the storage tank 51. Check the paper scale for the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the note on the back and fill out this page) r Printed by *Jibu Intellectual Property Bureau Staff Consumer Cooperatives-4 1292000 Ministry of Economics Property Bureau Staff Consumer Cooperatives Print A7 B7 V. Invention Description (2) During the plating solution circulation, air bubbles sometimes occur in the plating solution due to the bubble phenomenon of the circulation pump 54. When the bubble adheres to the surface of the substrate, it is hindered from plating growth for the reason, and plating abnormality (abnormal plating thickness or poor plating shape) occurs at the worst. In order to eliminate the air bubbles, for example, once the plating solution pressurized by the circulation pump 54 is flown into the storage tank, after the bubbles in the liquid are released into the atmosphere, the plating solution is not pressurized, that is, the liquid is allowed to flow in by the liquid weight. Electroplating treatment tank 5 2 . In the electroplating, in order to control the metal deposition rate and the uniformity of the deposition rate on the substrate, that is, to control the plating thickness, the flow rate control of the plating solution and the temperature control of the plating solution are also important factors. The flow rate of the plating solution is measured by a float type flow meter 5 5 to control the flow rate during the piping of the storage tank 51 to the plating tank 5 2 . For the temperature control of the plating solution, a heat exchange unit 57 (circulating warm water in a resin-bundled tube for indirect temperature adjustment = temperature adjustment) is provided in the buffer tank 53 for impregnation. When electroplating is performed, plating metal may be deposited in addition to a predetermined position on the substrate, such as a plating liquid circulation pipe, a circulation pump, or a plating tank itself, depending on the nature of the plating solution. These portions of the metal which are deposited outside the predetermined position are separated from the deposition site to be foreign matter floating in the plating solution, and are moved in the plating treatment apparatus in accordance with the flow of the plating solution. When the foreign matter adheres to the surface of the substrate, it becomes a cause, and in the worst case, plating abnormality (abnormal plating thickness or poor plating shape) occurs. In order to remove the foreign matter, for example, the filter 56 is installed after the circulation of the pump. Further, as shown in Fig. 3, τ ' is also provided with a filter 56 in front of the plating treatment tank 52. The second paper scale applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the note on the back and fill out this page), install and order «- -5- 1292000 A7 ___B7 V. Invention description (3) (Please read the precautions on the back and fill out this page.) The foreign matter floating in the plating solution is removed by a filter, but the precipitate deposited on the inner wall of the plating bath cannot be removed by the filter. Since these precipitates have the possibility of clogging the piping and increasing the number of foreign matter, it is necessary to use a halogen-based chemical solution (aqua regia, iodine, etc.) and wash it regularly. In the past, it has been difficult to control the deposition of the plating material by foreign matter in the plating process easily and effectively. Disclosure of the Invention The present invention has been made in view of the above problems, and an object thereof is to provide a plating treatment apparatus capable of easily and effectively suppressing precipitation of a plating material generated by a foreign matter in a plating process. In order to achieve the above object, the electroplating processing apparatus according to the present invention is for supplying a plating solution containing a plating material, and contacting the plating object with the plating solution to perform the plating object. Electroplating, and at the same time, when the plating material is precipitated at a position that is not desired, the plating treatment device for removing the plating material is removed by using a removing agent to: at least a portion of the plating treatment device in contact with the plating solution is used to promote the action of the removing agent. The surface roughness measured by the same conditions was characterized by a material having a lower rate of change than the resin. According to the above configuration, at least a part of the contact with the plating solution is formed by using a material having a lower surface roughness change rate than that of the resin which is measured under the same conditions when the removal agent acts. Therefore, 'in the electroplating treatment, when the electroplating material is precipitated at a non-predicted position, 'the above-mentioned removal agent acts to form the above-mentioned material and the above-mentioned Chinese standard (CNS) A4 specification (210×297 mm). ϊ*ϊ·Γν — -6 - 1292000 A7 B7 V. INSTRUCTIONS (4) The contact portion of the plating solution is not easily roughened when it is formed of a resin. Further, since the surface is not easily roughened, the precipitation of the plating material due to the unevenness of the surface roughness can be relatively suppressed. Therefore, it is possible to easily and effectively control the precipitation of the plating material by the foreign matter in the plating process. Further, in addition to the above-described configuration, the plating treatment apparatus of the present invention further has a plating treatment tank in which the plating target is brought into contact with the electro-mineral liquid, and the surface of the plating treatment tank is roughened by the same conditions when the removal agent acts. A material having a lower rate of change than a resin is formed. According to the above configuration, the wall surface of the plating treatment tank is formed by using a material having a lower surface roughness change rate than that of the resin measured under the same conditions when the action of the remover is promoted. Therefore, in addition to the effects of the above-described configuration, it is possible to more easily and effectively control the deposition of the plating material by the foreign matter in the plating process. Further, in addition to the above configuration, the plating processing apparatus of the present invention has the object of plating. The surface of the plating bath for the plating solution and the plating bath for the plating solution to the plating bath, and the surface of the wall for the plating bath is subjected to the same conditions as the surface roughness change rate when the removing agent acts. A material lower than the resin is formed as a feature. According to the above configuration, the wall surface of the pipe for the plating treatment tank is formed by using a material having a lower surface roughness change rate than that of the resin measured under the same conditions when the action of the remover is promoted. Therefore, in addition to the effects of the above configuration, it is easier and more effective to control the deposition of the plating material by foreign matter in the plating process. Articles | Chinese Standards (CNS) A4 specifications (210X297 mm) (Please read the notes on the back and fill out this page) • Installed and subscribed to the Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives Printed 1292000 A7 B7 Five In addition to the above configuration, the plating treatment apparatus of the present invention further includes a plating treatment tank for bringing the plating target into contact with the plating solution, and a plating solution which can be stored in the plating treatment tank. The storage tank and the wall surface of the storage tank are characterized by a material having a lower surface roughness change rate than the resin which is measured under the same conditions when the remover acts. According to the above configuration, the wall surface of the storage tank is formed by using a material having a lower surface roughness change rate than that of the resin which is measured under the same conditions when the action of the remover is promoted. Therefore, in addition to the effects of the above-described configuration, it is possible to more easily and effectively control the deposition of the plating material by the foreign matter in the plating process. Further, in addition to the above configuration, the plating processing apparatus of the present invention has its internal interior. A heating tank that enters the storage tank and heats the plating solution in the storage tank by heat conduction. With the above configuration, the plating solution in the storage tank is heated by heat conduction. Therefore, it is not necessary to use a member that is in direct contact with the electro-mineral liquid as a heat exchange unit for temperature adjustment. Therefore, it is easier and more effective to control the deposition of the plating material by the foreign matter in the plating process. In addition to the above-described configuration, the plating treatment apparatus of the present invention further includes a plating treatment tank for bringing the plating target into contact with the plating solution, and a plating treatment tank for conveying the plating solution to the plating treatment tank, and the plating treatment is performed. An ultrasonic flowmeter is disposed in a part of the piping for the tank, and the wall surface of the portion in which the ultrasonic flowmeter is disposed in the piping for the plating treatment tank is lower than the resin by the same condition as measured by the action of the removing agent. The material is formed as a feature. , Take the Chinese standard (CNS) A4 specification (210X297 mm) (Please read the back note first and then fill in this page) - Install ·
、1T 經·濟部智慧財產局員工消費合作社印製 -8- 1292000 A7 __B7 五、發明説明（6) 藉上述構成，由於上述電鍍處理槽用配管中被配置上 .述超音波式流量計之部位壁面，使用促使除去劑作用時以 相同條件測定之表面粗糙變化率比樹脂低的材料加以形成 。且上述超音波式流量計被配置於不會接觸電鍍液之位置 ’於是能將超音波信號抵觸於通過上述電鍍處理槽用配管 中之電鍍液，依據自電鍍液反射之信號加以測定電鍍液之 流量。是故，除了上述構成所致效果外，更加能容易且有 效地控制在電鍍處理中以異物所發生電鍍物質之析出。 本發明之其他目的、特徵、及優點，料能由以下所示 記載充分了解之。又，本發明之利益，料能由參照添附圖 面之其次說明明白之。 圖示之簡單說明 圖1爲本發明有關電鍍處理裝置之一構成例說明用顯 示圖。 圖2爲各材質之鹵系藥液（碘）所致表面粗糙變化率 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 。 知 圖習 示爲 顯 3 用圖 明 說 明 說 號 符 槽 彐二 理 槽處槽泵 存鍍衝環 儲電緩循 圖 示 顯 用 明 說 例 成 構 - 之 置 裝 彐二 理 處 鍍 冬紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -9 - 1292000 A7 B7 五、發明説明（8) II----,--^--^裝-- (請先閲讀背面之注意事項再填寫本頁) 僅0 %〜1 0 %地非常之少。由於不可能完全防止基板上 所定位置（電鍍對象物之電鍍對象位置）以外之金屬析出 ，致無法避免使用鹵系藥液加以定期性洗滌，因此雖反覆 進行以鹵系藥液加以洗滌，亦需使用不致破壞電鍍處理裝 置內壁面（與電鍍液接觸之面）之材料。 電鍍厚度，在進行電鍍之基板上雖需呈均勻，惟爲此 ，如上述電鍍液之流量控制，電鍍液之溫度控制亦爲重要 因素。 流量測定，係使用習知之浮子式流量計。該型式之流 量計由於藉流量將浮子（浮動元件）加以浮游數値化，致 浮子本身成爲阻礙液流之主要原因。又爲裝設流量計所需 之配管配設相當複雜，因此增大電鍍液與配管之觸液面積 (與液體接觸之面積），在流量計內部或配管彎曲部易析 出金屬，浮子本身亦會發生析出，故隨著使用時間所累積 之析出物，而有無法以穩定進行正確之流量測定的可能性 〇 經‘濟部智慧財產局員工消費合作社印製 以藥液流量之測定方法，卻有使用與液體非接觸亦可 測定之超音波方法。即將超音波信號抵觸於配管內之流體 ，以讀取其傳達信號，以正確測定流速·流量。惟，樹脂 製配管卻會被破壞配管內壁面，在其析出金屬，而無法正 確地收發傳達信號，.故在電鍍處理裝置不能使用。 電鍍液之溫度控制，雖在上述緩衝槽使用將樹脂製管 子加以捆綁之熱交換單元，但樹脂之熱傳導率不佳，致欲 進行所盼熱交換卻需增大觸液面積。因此亦與熱交換器之 .夹紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） U -11 - 1292000 Α7 Β7 五、發明説明（9) 構造相輔，易析出電鍍物質之金屬。 (請先閲讀背面之注意事項再填寫本頁) 電鍍液之溫度控制，雖在進入電鍍處理槽之直前加以 進行爲宜，但習知電鍍處理裝置，由於使用樹脂製熱交換 單元致易析出金屬。因此乃在緩衝槽進行溫度控制，並於 循環泵予以加壓，透過過濾器將電鍍液注入儲存槽。其結 果，配管變長，發生溫度下降，困難進行正確之溫度控制 。又，隨著觸液面積之增加，亦招惹更加析出金屬。 又，習知電鍍處理裝置，在圖3所示電鍍處理槽5 2 直前亦設有過濾器5 6。此爲除去自儲存槽5 1或流量計 5 5及儲存槽直到電鍍處理槽5 2之配管中所析出金屬異 物而設置。且藉過濾器進行除去異物時，雖需對藥液施加 所定壓力，惟在儲存槽5 1至電鍍處理槽5 2之間無法裝 5受爲防止空泡現象之加壓用水栗’故需利用藥液之落差（ 自重）進行加壓。而爲獲得所盼壓力，則需將儲存槽5 1 設置於相稱之高度，復由於過濾器之堵塞狀況（流量下降 )需更換過濾器。因此，有保養時間及費用增多之可能性 〇 經濟部智慧財產局員工消費合作社印製 爲防止基板上所定位置（電鍍對象物之電鍍對象部位 )以外之金等金屬（電鍍物質）之析出，已知將與電鍍處 理裝置之電鑛液接觸部分的觸液面積抑制於最小限度，並 以鹵系藥液等、洗滌劑進行定期性洗滌時內壁面之粗糙度 亦不起變化之材料予以製作電鍍處理裝置頗爲有些。依據 之，乃可大幅度抑制電鍍處理裝置之異物發生，以削減除 去異物習知所需之過濾器數目，而能抑制更換過濾器有關 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) ζ·ι·^· -12- 1292000 A7 ----- B7, 1T, and the Department of Intellectual Property of the Ministry of Intellectual Property, Printed by the Consumer Cooperatives -8- 1292000 A7 __B7 V. Inventive Note (6) With the above configuration, the ultrasonic flowmeter is disposed in the piping for the plating treatment tank. The wall surface of the portion is formed using a material having a lower surface roughness change rate than that of the resin measured under the same conditions when the action of the remover is promoted. Further, the ultrasonic flowmeter is disposed at a position where it does not contact the plating solution. Thus, the ultrasonic signal can be in contact with the plating solution passing through the plating tank, and the plating solution can be measured based on the signal reflected from the plating solution. flow. Therefore, in addition to the effects of the above configuration, it is easier and more effective to control the deposition of the plating material by the foreign matter in the plating process. Other objects, features, and advantages of the present invention will be apparent from the description and appended claims. Further, the benefits of the present invention can be understood from the following description of the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view for explaining the configuration of a plating apparatus according to the present invention. Figure 2 shows the rate of surface roughness change caused by the halogenated liquid (Iodine) of each material (please read the notes on the back and fill out this page). Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative. The knowledge of the map is shown as 3. The diagram shows that the symbol is trough, the trough, the trough pump, the plating, the rushing ring, the storage, the slow-moving, the illustration, the use of the example, the construction, the installation, the second, the plating, the winter paper scale. Applicable to China National Standard (CNS) A4 Specification (210X297 mm) -9 - 1292000 A7 B7 V. Invention Description (8) II----,--^--^装-- (Please read the notes on the back first) Fill in this page again) Only 0%~1 0% is very small. Since it is impossible to completely prevent the precipitation of a metal other than the predetermined position on the substrate (the plating target position of the plating target), it is inevitable that the halogen-based chemical solution is used for periodic washing. Therefore, it is necessary to repeatedly wash the halogen-based chemical solution. Use a material that does not damage the inner wall surface of the plating treatment device (the surface in contact with the plating solution). The thickness of the plating needs to be uniform on the substrate to be plated. However, for the flow control of the above plating solution, the temperature control of the plating solution is also an important factor. For flow measurement, a conventional float type flowmeter is used. This type of flow meter causes the float (floating element) to float by the flow rate, so that the float itself becomes the main cause of the flow. Moreover, the piping required for installing the flowmeter is quite complicated, so that the contact area of the plating solution and the piping (the area in contact with the liquid) is increased, and the metal is easily precipitated inside the flowmeter or in the curved portion of the piping, and the float itself is also Precipitation occurs, so there is a possibility that the flow rate can be measured stably with the use of the precipitate accumulated in the use time, and the method of measuring the flow rate of the liquid medicine printed by the Ministry of Intellectual Property of the Ministry of Intellectual Property is printed. Ultrasonic methods that can be measured by non-contact with liquids. That is, the ultrasonic signal is in contact with the fluid in the pipe to read the signal to accurately measure the flow rate and flow rate. However, the resin pipe is destroyed by the inner wall surface of the pipe, and the metal is deposited thereon, and the signal cannot be transmitted and received correctly. Therefore, the plating apparatus cannot be used. In the temperature control of the plating solution, although the heat exchange unit in which the resin tube is bundled is used in the above buffer tank, the thermal conductivity of the resin is not good, and it is necessary to increase the liquid contact area in order to perform the desired heat exchange. Therefore, it is also applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) and the paper size of the heat exchanger. U -11 - 1292000 Α7 Β7 5. Inventive Note (9) The structure is complementary, and the metal of the plating material is easily precipitated. (Please read the precautions on the back and fill out this page.) The temperature control of the plating solution is preferably carried out before entering the plating bath. However, the conventional plating treatment device is easy to precipitate metal due to the use of a resin heat exchange unit. . Therefore, the temperature is controlled in the buffer tank, and the circulation pump is pressurized, and the plating solution is injected into the storage tank through the filter. As a result, the piping becomes long, the temperature drops, and it is difficult to perform correct temperature control. Moreover, as the contact area increases, it also causes more precipitation of metals. Further, in the conventional plating treatment apparatus, a filter 56 is also provided in front of the plating treatment tank 5 2 shown in Fig. 3 . This is provided by removing metal foreign matter deposited in the piping from the storage tank 5 1 or the flow meter 5 5 and the storage tank to the plating treatment tank 5 2 . When a foreign matter is removed by a filter, it is necessary to apply a predetermined pressure to the chemical solution, but it is not possible to install a pressurized water chestnut between the storage tank 51 and the plating treatment tank 52 to prevent cavitation. The drop of the liquid (self weight) is pressurized. In order to obtain the desired pressure, the storage tank 5 1 needs to be set at a proportional height, and the filter needs to be replaced due to the clogging condition of the filter (the flow rate is reduced). Therefore, there is a possibility that the maintenance time and the increase in the cost of the metal (electroplating material) other than the position (the plating target portion of the plating target) on the substrate are printed. It is known that the contact area of the contact portion of the electroplating solution of the electroplating treatment device is minimized, and the material whose internal wall surface roughness does not change when the detergent is periodically washed with a halogen-based chemical solution or the like is electroplated. The processing device is quite a bit. According to this, it is possible to greatly suppress the occurrence of foreign matter in the plating treatment apparatus, and to reduce the number of filters required for removing foreign matter, and to suppress the replacement of the filter. The Chinese National Standard (CNS) A4 specification (210X297) is applicable to the paper scale.厘) ζ·ι·^· -12- 1292000 A7 ----- B7
五、發明説明（A 之保養時間及費用之發生。 (請先閲讀背面之注意事項再填寫本頁) 對於半導體積體電路之金（A u )的凸塊電極形成工 手壬槪要，雖擬容後再述，惟如已述，需要將配管或電鍍處 理槽等使用鹵系藥液（王水.碘等）加以定期性洗條。 如已說明，在圖2，係顯示有使用鹵系藥液加以洗滌 時之電鍍處理裝置所用樹脂系材料與玻璃系材料的表面粗 糙變化率’而洗滌前之表面粗糙（初期値），無論是樹脂 系材料或玻璃系材料，配管內之表面粗糙雖未見有意差異 ’但如浸漬於藥液（碘液）一週時，樹脂系材料之表面粗 糖對於初期値卻呈7 0〜1 5 8 %變化率之非常大幅度變 化。針對之，玻璃系材料時，可知變化率呈〇〜丨〇 %之 格外地小。該表面粗糙變化率愈小愈佳。 表面粗糙變化率高時、即內壁凹凸增加時，由於以其 爲核心變爲金屬易析出於各槽或配管之內壁，致每次進行 藥液洗滌、或每多次洗滌需要更換各槽或配管。 經濟部智慧財產局員工消費合作社印製 在本實施形態，乃以雖反覆進行鹵系藥液之洗滌，其 內壁面亦不會發生粗糙、或極少粗糙之材料，而使用玻璃 構成電鍍處理裝置之各部分。因此，能抑制金屬之析出於 內壁面。 由於玻璃之熱傳導率比樹脂爲高，故藉使用玻璃構成 儲存槽，將儲存槽浸漬於加熱槽，而能進行電鍍液之溫度 控制。其結果，不需要熱交換單元，可大幅度減少與電鍍 液之觸液面積同時，尙能在更接近於電鍍處理槽之處所進 行電鍍液之溫度控制，以圖處理溫度之穩定化。 ^氏張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐1 -13- 1292000 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（A 由於將儲存槽與電鍍處理槽、及其間之配管全部以玻 璃系材料形成’可防止其間之金屬析出，致儲存槽與電鍍 處理槽之間不必用過濾器，而能削減定期性過濾器更換等 之保養費用·保養時間。且儲存槽與電鍍處理槽之落差， 只要形成有電鍍液流動所需之落差即可，乃能小型化電鍍 處理裝置。 又，藉將配管亦變更爲玻璃製，而可抑制配管內壁面 之金屬析出，故能導入與液體非接觸地測定流量之超音波 流量計，可使配管成爲單純之構造。 以下，就半導體積體電路之製造工程所用的電鍍處理 裝置，利用圖示詳細說明本發明之實施形態。 又，以下說明引用之藥液等，卻與通常之半導體積體 電路製造所用藥液或使用條件基本上相同，除了特殊情形 之外，則省略其詳細記述 首先，說明使用本實施形態有關電鍍處理裝置之半導 體積體電路製造方法、即半導體基板上之金（Au)電鍍 所致凸塊電極形成工程。 在本實施形態，以被電鍍基板（電鍍對象物）所使用 之上述半導體基板，係爲將多數半導體積體電路加以組裝 所成者，可由以下工程作成之。 在組裝有半導體積體電路之半導體基板、例如直徑8 英吋（約2 0 0 m m )之硅酮晶圓表面全面’堆積所定厚 度之S i〇2等絕緣膜，利用光蝕法技術及絕緣膜蝕刻法技 術，將該絕緣膜之所定位置加以開口。 -冬轉張尺度適用中國國家標準（CNS ) A4規格（21〇><297公釐） ilb _14_ (請先閲讀背面之注意事項再填寫本頁) -裝· 訂 絲 1292000 A7 ____B7_ 五、發明説明（? 0 . 2 // m 〇 接著，將光阻劑塗敷於晶圓全面，利用光蝕法技術除 去晶圓上所定位置、即表面保護膜開口部上方之光阻劑。 藉以上工程，在次段電鍍工程可形成成爲被電鍍基板 之半導體基板。又，晶圓上所殘留光阻劑可達成電鍍工程 之掩膜任務，電鍍金屬則析出於光阻劑之開口部。 更，就對於上述半導體基板由A u電鍍予以形成凸塊 電極之電鍍工程進行說明。本實施形態有關電鍍處理裝置 即爲進行該電鍍工程之裝置。 首先，在上述半導體基板之晶圓上所堆積基底金屬所 定位置予以連接電鍍處理裝置之陰電極。且，使上述半導 體.基板與未圖示之陽電極略呈平行對向，浸漬於電鍍處理 槽2所裝入電鍍液中。而在半導體基板與陽電極之間藉電 源予以施加所定電壓，由電解電鍍法使電鍍金屬析出於半 導體基板之所定位置、亦即光阻劑之開口部。 半導體基板與陽電極之間所施加之電壓，乃由半導體 基板之大小或電鍍速度等加以適當地設定即可。 上述電鍍工程之形成凸塊電極完妥半導體基板係被除 去光阻劑，況且，以該凸塊電極爲掩膜將不需部分之基底 金屬加以除去。然後，經過所定工程以完成半導體積體電 路電路。 其次，對本實施形態有關電鍍處理裝置進行詳細說明 -------— (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -16 - 1292000 A7 B7 五、發明説明（仏 〇 圖1爲本實施形態有關電鍍處理裝置之構成槪略圖。 在圖1，1爲儲存槽、2爲電鍍處理槽、3爲緩衝槽 、4爲循環泵、6爲過濾器、8爲配管（樹脂配管）、9 爲配管（玻璃配管）、1 0爲加熱槽、1 1爲超音波式流 量計（非液體接觸（非觸液）型）之各顯示。 各槽之大小，乃使用約4 0 0 m m (縱向）X 1 0 0 m m (橫向）X 3 0 0 m m (高）之儲存槽1，及約 3〇〇mmx 1〇〇mmx 3 0 〇mm之電鍍處理槽2 ，以 及約7 0〇mmx 5 0 Ommx 2 0 0mm之緩衝槽3。又 ，加熱槽10只要具有可容納儲存槽1之足夠底面積及高 度即可。 在圖1所示本實施形態有關電鍍處理裝置，儲存槽1 及電鍍處理槽2、以及緩衝槽3係由玻璃、即硬質玻璃或 石英玻璃予以製成，且，自過瀘器6至儲存槽1之配管9 、自儲存槽1至電鍍處理槽2之配管（電鍍處理槽用配管 )9亦由玻璃所製成。 由於過濾器6至電鍍處理槽2以玻璃所製成，致此間 之槽與配管的內壁面之金屬析出至爲極微量。 自電鍍處理槽2以下至電鍍處理槽2之間卻使用樹脂 製之配管。由使用樹脂製配管致配管內壁雖易於析出金屬 ，惟此間所析出之金屬異物則藉予以裝設過濾器6，而可 阻止其流入於儲存槽1。 將緩衝槽3以樹脂製形成亦無妨，惟由於會增大與電 .本紙張尺度適用中國國家標準（CNS ) A4規格（210><297公釐） ' ·; Γν (請先閲讀背面之注意事項再填寫本頁) ▼裝_ 經濟部智慧財產局員工消費合作社印製 -17- 1292000 A7 _B7___ 五、發明説明（& 鍍液之觸液面積致金屬析出量亦增加，故會促成過瀘器6 之及早堵塞。因此，緩衝槽3亦呈玻璃製較佳。 (請先閲讀背面之注意事項再填寫本頁) 藉將自儲存槽1至電鍍處理槽2之配管設成玻璃製， 其內壁面所析出之金屬爲微量，於是可使用利用超音波之 流量計。異於習知浮子式流量計，其間之配管變爲非常單 純，與使用玻璃相輔，此間之金屬析出幾乎全無，其結果 ，可省略習知電鍍處理裝置所需之電鍍處理槽直前之過濾 器。在本實施形態有關之電鍍處理裝置，比起習知技術有 關之裝置係可削減過濾器數之約五分之一，除了能削減電 鍍處理裝置之保養所需費用及時間同時，更對電鍍處理裝 置之小型化亦有貢獻。 又，習知電鍍處理裝置由於使用樹脂系材料之配管， 致因配管內面之表面粗糙度增加而增加對於內壁之析出物 ，利用超音波等之非觸液流量計竟無法獲得安定之數値， 但在本實施形態，藉更換爲玻璃系材料之配管而可抑制對 於配管內之析出，使用非觸液流量計（超音波）亦能進行 穩定之計測。又，藉使用非觸液流量計（超音波），乃可 經濟部智慧財產局員工消費合作社印製 除去原來浮子等之配管內抵抗物，能獲得更加穩定之流量 〇 針對樹脂系材料、例如聚丙烯之熱傳導率爲4 . 2〜 4 · 5 X 1 0 ’ 4 ( c a 1 / c m · s e c · °C )，玻璃系 材料、例如硬質玻璃之熱傳導率爲2 6 . 〇〜3 0 . 〇 x 1 〇 · 4 ( c a 1 / c m · s e c · °C )，而比樹脂大一位 數。 夯紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -18- 1292000 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（4 因此，將進行電鍍液之溫度控制所需熱交換單元設爲 玻璃製時，比起樹脂製時能大爲加以小型化。且，與熱交 換單元之小型化相輔可抑制金屬之析出，並將習知電鍍處 理裝置之僅在緩衝槽才能進行之電鍍液之溫度控制可在儲 存槽加以進行。其結果，可在更接近於電鍍處理槽之處所 實行電鍍液之更正確溫度控制。 以熱交換單元，雖將通常所用較細管子予以捆綁呈蜂 窩形狀者浸漬於儲存槽1之電鑛液亦可，惟本實施形態， 卻利用儲存槽1爲玻璃製其熱傳導率良好，如圖1所作例 示，將儲存槽1直接插入於另途所設加熱槽1 0內亦可進 行所盼之溫度控制。此時，由於未將特殊情形之熱交換單 元浸漬於電鍍液中，致更能抑制金屬之析出。加熱槽1 0 內則可裝入例如溫水，以該溫水，藉熱傳導將儲存槽1內 之電鍍液予以保溫。 以上，係將自電鍍處理槽2至緩衝槽3之配管、及自 緩衝槽3經過循環泵4至過濾器6之配管，使用樹脂製配 管之例子加以說明。且將此間之配管形成爲玻璃製，自抑 制金屬析出觀點言之亦無特別之問題。惟泵浦近旁之配管 可料想由於泵浦之振動等促使玻璃破損等，故對於變更爲 玻璃系材料需作特別之考量。 藉將其他部位之配管.各槽之材質變更爲玻璃系材料 ’則可將相當於電鍍液之總觸液面積約9 0 %部分設成以 玻璃系材料爲之，其結果，能抑制半導體裝置表面所定位 ® (電鍍對象物之電鍍對象部位）以外之析出。 (請先閱讀背面之注意事項再填寫本頁) _裝· 訂 _# 2it紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐} -19- 經濟部智慧財產局員工消費合作社印製 1292000 A7 ____B7 __ 五、發明説明（Υ 在圖1 ，雖顯示自儲存槽1之電鍍液的流出口設於其 底面之例子，惟予以設於側面亦可。此時，亦能使用相同 之加熱槽1 0加以調溫。 又，同樣在圖1 ，雖顯示向電鍍處理槽2之電鍍液流 入口設於電鍍處理槽2側面之例子，但爲控制電鍍厚度予 以設於電鍍處理槽2底面亦可，又，當然亦可設置多數之 流入口。 藉如此構成，係可防止向電鍍處理裝置之裝置內部的 金屬析出。其結果，能減.低自裝置內剝離之金屬附著於半 導體基板而構成不良。於是可削減爲除去異物所使用之過 濾器數，進而能削減保養有關之費用及時間。 又，能將實行電鍍液溫度調節之處所移到更接近於電 鍍處理槽，以圖在進行電鍍之基板上實施正確的溫度控制。 在此，雖以洗滌液（除去劑）使用鹵系藥液，卻是金 (A u )電鍍時之一例示而已，其他，如爲C u電鍍，則 亦可使用濃硝酸或濃硫酸，如爲N i電鍍，則亦可使用濃 鹽酸或稀硝酸。 以上，即以半導體積體電路之電鍍處理裝置爲例，就 本發明詳細地加以說明，惟不必多言，本發明當然亦可適 用於半導體積體電路以外之半導體裝置、例如化合物半導 體製造工程所使用之電鍍處理裝置、或液晶面板製造工程 之電鍍處理裝置。 又，本發明，係在由電鍍液之儲存槽、與自儲存槽流 入電鍍液之電鍍處理槽、與自電鍍處理槽流入電鍍液之緩 批衣 訂 ^ IAW, (請先閱讀背面之注意事項再填寫本頁) . 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -20- 經濟部智慧財產局員工消費合作社印製 1292000 A7 ___ B7_五、發明説明（4 衝槽、與計測電鍍液流量之流量計、與實行電鍍液之溫度 控制的熱交換單元、與除去電鍍液中之異物的過濾器、與 促使電鍍液循環之泵浦、以及將各槽加以連結之配管所成 的半導體積體電路之電鍍處理裝置，把與電鍍液接觸部分 ，以伴隨鹵系藥液洗滌時之表面粗糙變化率爲初期値之 1 0 %以下的材料予以構成亦可。 又，在上述構成，將伴隨鹵系藥液洗滌時之表面粗糙 變化率爲初期値之1 0 %以下的材料，由硬質玻璃或石英 玻璃予以構成亦可。 又，在上述構成，將上述電鍍液之流量計，構成爲利 用超音波進行與電鍍液非接觸之計測亦可。 又，在上述構成，將連結上述各槽之配管一部分，由 硬質玻璃或石英玻璃加以構成亦可。 又，在上述構成，將電鍍液之溫度控制構成爲在上述 儲存槽予以進行亦可。 且，在「發明之最佳實施形態」的項目所記載之具體 實施形態或實施例，純粹僅在說明本發明之技術內容而已 ，不應只限定於該具體例以狹義解釋之，實際上在本發明 之精神與其次記載之申請專利範圍內，可作種種變化加以 實施。 產業上之可利用忤 本發明係關於半導體積體電路等之製作裝置等所使用 的電鍍處理裝置，特別是，可使用於被要求小型輕量化、 (請先閲讀背面之注意事項再填寫本頁) -裝· 訂 1«· -η参紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） … -21 _ 1292000 A7 B7 五、發明説明（^ 高密度安裝化之攜帶資訊終端機等電子機器所組裝之如半 導體積體電路的用途。 (請先閱讀背面之注意事項再填寫本頁) ▼裝·V. Invention Description (The maintenance time and cost of A. (Please read the note on the back and fill out this page.) For the gold electrode of the semiconductor integrated circuit (A u ), the bump electrode formation workmanship, though After the introduction, it is necessary to use a halogen-based liquid (Wangshui. Iodine, etc.) for periodic washing of the piping or plating bath, etc. As already explained, in Figure 2, the use of halogen is shown. The surface roughness change rate of the resin-based material and the glass-based material used in the plating treatment apparatus when the chemical solution is washed, and the surface roughness before washing (initial enthalpy), whether the resin-based material or the glass-based material, the surface roughness in the piping Although no intentional difference was observed, the surface of the resin-based material showed a very large change in the rate of change from 70 to 158 % for the initial enthalpy when immersed in the liquid medicine (iodine solution) for one week. When the material is used, it is known that the rate of change is 〇~丨〇%, which is exceptionally small. The smaller the surface roughness change rate, the better. When the surface roughness change rate is high, that is, when the inner wall unevenness increases, it becomes easy to change Out of The inner wall of each tank or piping is required to be replaced with each tank or piping every time the chemical liquid is washed or every time. The Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative is printed in this embodiment, but the halogen system is repeated. In the washing of the chemical liquid, the inner wall surface is not rough or rarely rough, and the glass is used to form various parts of the plating treatment device. Therefore, the precipitation of the metal to the inner wall surface can be suppressed. Since the thermal conductivity of the glass is higher than that of the resin Since the storage tank is made of glass, the storage tank is immersed in the heating tank, and the temperature of the plating solution can be controlled. As a result, the heat exchange unit is not required, and the contact area of the plating solution can be greatly reduced. The temperature of the plating solution can be controlled closer to the plating bath to stabilize the temperature. The Chinese standard (CNS) A4 specification (210 X 297 mm 1 -13- 1292000 A7) B7 Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives, Printing 5, Inventions (A) Because the storage tank and the plating tank, and the piping between them are all in the glass system The material formation 'prevents the precipitation of metal between them, so that no filter is needed between the storage tank and the plating treatment tank, and the maintenance cost and maintenance time of the periodic filter replacement, etc. can be reduced, and the difference between the storage tank and the plating treatment tank is In addition, it is possible to reduce the size of the plating solution, and it is possible to reduce the size of the plating apparatus. Further, by changing the piping to glass, the metal deposition on the inner wall surface of the piping can be suppressed, so that it can be introduced into contact with the liquid. In the ultrasonic flowmeter for measuring the flow rate, the piping can be made into a simple structure. Hereinafter, an embodiment of the present invention will be described in detail with reference to the plating treatment apparatus used in the manufacturing process of the semiconductor integrated circuit. The liquid or the like is basically the same as the chemical liquid or the use conditions for the manufacture of the conventional semiconductor integrated circuit, and the detailed description thereof is omitted except for the special case. First, the semiconductor integrated circuit manufacturing using the plating processing apparatus according to the present embodiment will be described. The method, that is, the bump electrode formation process by gold (Au) plating on a semiconductor substrate. In the present embodiment, the semiconductor substrate used for the substrate to be plated (the object to be plated) is formed by assembling a plurality of semiconductor integrated circuits, and the following steps can be made. Insulating film such as S i〇2 of a predetermined thickness of a semiconductor substrate on which a semiconductor integrated circuit is assembled, for example, a surface of a silicone wafer having a diameter of 8 inches (about 200 mm), using photolithography technology and insulation A film etching technique is used to open a predetermined position of the insulating film. - Winter rotation scale applies to China National Standard (CNS) A4 specification (21〇><297 mm) ilb _14_ (Please read the note on the back and fill out this page) - Loading · Threading 1292000 A7 ____B7_ V. DESCRIPTION OF THE INVENTION (?0. 2 // m 〇 Next, a photoresist is applied to the entire wafer, and the photoresist is removed by a photo-etching technique, that is, a photoresist above the opening of the surface protective film. In the second stage electroplating process, the semiconductor substrate can be formed into a substrate to be plated. Further, the photoresist remaining on the wafer can achieve the masking task of the electroplating process, and the electroplated metal is deposited in the opening portion of the photoresist. An electroplating process in which a bump electrode is formed by Au plating on the semiconductor substrate will be described. In the present embodiment, the plating processing apparatus is an apparatus for performing the electroplating process. First, a base metal is deposited on a wafer of the semiconductor substrate. The cathode electrode of the plating apparatus is connected to the predetermined position, and the semiconductor substrate is slightly parallel to the anode electrode (not shown), and is immersed in the plating bath 2 to be charged. In the liquid, a predetermined voltage is applied between the semiconductor substrate and the anode electrode by a power source, and the plating metal is deposited by electrolytic plating at a predetermined position of the semiconductor substrate, that is, an opening portion of the photoresist. Between the semiconductor substrate and the anode electrode The applied voltage may be appropriately set by the size of the semiconductor substrate, the plating speed, etc. The bump electrode is formed in the plating process, and the photoresist is removed from the semiconductor substrate, and the bump electrode is used as a mask. The film removes part of the base metal. Then, the predetermined process is completed to complete the semiconductor integrated circuit. Next, the plating processing apparatus of this embodiment will be described in detail ------- (Please read the back Precautions and then fill out this page) Customs Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperatives Printed Paper Size Applicable to China National Standard (CNS) A4 Specification (210X 297 mm) -16 - 1292000 A7 B7 V. Invention Description (仏〇 Fig. 1 is a schematic view showing the configuration of a plating apparatus according to the embodiment. In Fig. 1, 1 is a storage tank, 2 is a plating tank, and 3 is slow. Slotting, 4 is a circulation pump, 6 is a filter, 8 is a pipe (resin pipe), 9 is a pipe (glass pipe), 10 is a heating tank, and 1 is an ultrasonic flowmeter (non-liquid contact (non-contact) Each display of the liquid type). The size of each groove is a storage tank 1 of approximately 400 mm (longitudinal) X 1 0 0 mm (transverse) X 3 0 0 mm (height), and approximately 3 mmx 1〇〇mmx 3 0 〇mm plating treatment tank 2, and about 70 〇mmx 5 0 Ommx 2000 mm buffer tank 3. Further, the heating tank 10 has a sufficient bottom area and height to accommodate the storage tank 1, can. In the plating processing apparatus of the present embodiment shown in Fig. 1, the storage tank 1, the plating processing tank 2, and the buffer tank 3 are made of glass, that is, hard glass or quartz glass, and are supplied from the filter 6 to the storage tank. The piping 1 of 1 and the piping (the piping for plating treatment tank) 9 from the storage tank 1 to the plating treatment tank 2 are also made of glass. Since the filter 6 to the plating treatment tank 2 are made of glass, the metal between the groove and the inner wall surface of the pipe is precipitated to a very small amount. A resin pipe is used between the plating bath 2 and the plating bath 2 below. In the case where the inner wall of the pipe is made of a resin, the metal is easily precipitated, but the metal foreign matter precipitated there is provided with the filter 6, so that it can be prevented from flowing into the storage tank 1. It is also possible to form the buffer tank 3 in resin, but it is applicable to the Chinese National Standard (CNS) A4 specification (210><297 mm) for the paper size. · Γν (Please read the back Note: Please fill out this page again. ▼ Install _ Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Print -17- 1292000 A7 _B7___ V. Invention Description (& The liquid contact area of the plating solution also increases the amount of metal precipitation, so it will be promoted The buffer 6 is also blocked in the early stage. Therefore, the buffer tank 3 is also made of glass. (Please read the back note first and then fill out this page.) The piping from the storage tank 1 to the plating tank 2 is made of glass. The metal deposited on the inner wall surface is a trace amount, so that a flowmeter using ultrasonic waves can be used. Unlike the conventional float type flowmeter, the piping between them becomes very simple, and it is complementary to the use of glass, and the metal precipitation therein is almost completely absent. As a result, the filter in front of the plating bath required for the conventional plating apparatus can be omitted. In the plating apparatus according to the present embodiment, the number of filters can be reduced as compared with the apparatus related to the prior art. In addition, it is possible to reduce the cost and time required for the maintenance of the plating treatment device, and contribute to the miniaturization of the plating treatment device. Moreover, the conventional plating treatment device uses a resin-based material for piping, resulting in piping. When the surface roughness of the surface is increased and the precipitates on the inner wall are increased, the number of stable cells cannot be obtained by using a non-liquid-contacting flowmeter such as ultrasonic waves. However, in the present embodiment, the piping can be suppressed by replacing the piping with the glass-based material. For the precipitation in the pipe, the non-contact liquid flow meter (ultrasonic wave) can also be used for stable measurement. Moreover, by using the non-contact liquid flow meter (ultrasonic wave), it can be printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative. 2, 4 to 4 · 5 X 1 0 ' 4 ( ca 1 / cm · sec · °C) The thermal conductivity of a glass-based material such as hard glass is 2 6 . 〇 〜 3 0 . 〇 x 1 〇 · 4 ( ca 1 / cm · sec · °C ), which is one digit larger than the resin. Zhang scale applies China National Standard (CNS) A4 specification (210X297 mm) -18- 1292000 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (4 Therefore, the heat required for temperature control of plating solution will be performed When the exchange unit is made of glass, it can be made smaller than that of the resin. Moreover, the miniaturization of the heat exchange unit can suppress the precipitation of the metal, and the conventional plating treatment device can only be used in the buffer tank. The temperature control of the plating solution carried out can be carried out in a storage tank, as a result of which a more accurate temperature control of the plating solution can be carried out closer to the plating bath. In the heat exchange unit, although the thinner tube which is usually used is bundled into a honeycomb shape, the electric ore liquid immersed in the storage tank 1 may be used. However, in the embodiment, the storage tank 1 is made of glass, and the thermal conductivity is good, as shown in the figure. As an exemplification, the desired temperature control can be performed by directly inserting the storage tank 1 into the heating tank 10 provided in the other way. At this time, since the heat exchange unit in a special case is not immersed in the plating solution, precipitation of metal is more suppressed. In the heating tank 10, for example, warm water can be charged, and the plating liquid in the storage tank 1 is kept warm by the heat transfer. In the above, the piping from the plating tank 2 to the buffer tank 3 and the piping from the buffer tank 3 through the circulation pump 4 to the filter 6 are described using an example of a resin piping. Further, the piping for this purpose is formed into a glass system, and there is no particular problem in the viewpoint of suppressing metal deposition. However, piping in the vicinity of the pump is expected to cause damage to the glass due to vibration of the pump, etc., so special consideration is required for changing to glass-based materials. By changing the material of each of the grooves to the glass-based material, the portion corresponding to the total contact area of the plating solution can be made of a glass-based material, and as a result, the semiconductor device can be suppressed. The surface is positioned (other than the plating target of the plating object). (Please read the notes on the back and fill out this page) _装·订_# 2it paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -19- Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative print 1292000 A7 ____B7 __ V. Inventive Note (Υ In Figure 1, although the example of the flow outlet of the plating solution from the storage tank 1 is provided on the bottom surface thereof, it may be provided on the side. In this case, the same heating tank can also be used. Also, in Fig. 1, although the plating liquid inlet to the plating bath 2 is provided on the side of the plating bath 2, the thickness of the plating bath may be provided on the bottom surface of the plating bath 2. Further, it is a matter of course that a plurality of inlets can be provided. By this configuration, it is possible to prevent metal deposition inside the apparatus of the plating treatment apparatus. As a result, it is possible to reduce the adhesion of the metal which is peeled off from the apparatus to the semiconductor substrate, resulting in poor formation. Therefore, the number of filters used for removing foreign matter can be reduced, and the cost and time for maintenance can be reduced. Moreover, the temperature adjustment of the plating solution can be moved closer to electroplating. The processing tank is configured to perform accurate temperature control on the substrate to be plated. Here, although the halogen-based chemical solution is used as the washing liquid (removing agent), it is an example of gold (A u ) plating, and the like, For Cu plating, concentrated nitric acid or concentrated sulfuric acid can also be used. For electroplating of N i , concentrated hydrochloric acid or dilute nitric acid can also be used. The above, that is, the electroplating treatment device of the semiconductor integrated circuit is taken as an example, and the present invention is In addition, it is needless to say that the present invention can be applied to a semiconductor device other than a semiconductor integrated circuit, for example, a plating processing apparatus used in a compound semiconductor manufacturing process, or a plating processing apparatus for a liquid crystal panel manufacturing process. The invention is in the storage tank of the plating solution, the plating treatment tank which flows into the plating solution from the storage tank, and the slow-coating IAW which flows into the plating solution from the plating treatment tank, (please read the precautions on the back first and then fill in This page applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -20- Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative prints 1292000 A7 ___ B7_ V. Description of the invention (4 fluent, flow meter for measuring the flow rate of the plating solution, heat exchange unit for controlling the temperature of the plating solution, filter for removing foreign matter in the plating solution, and pump for promoting the circulation of the plating solution, And a plating processing apparatus for a semiconductor integrated circuit formed by piping in which the respective grooves are connected, and a material which is in contact with the plating solution and whose surface roughness is changed by the halogen-based chemical solution is 10% or less of the initial value. In the above configuration, the material having a surface roughness change rate at the time of washing with the halogen-based chemical solution is 10% or less of the initial enthalpy, and may be composed of hard glass or quartz glass. In the configuration, the flow meter of the plating solution may be configured to perform non-contact measurement with the plating solution by ultrasonic waves. Further, in the above configuration, a part of the piping connecting the grooves may be formed of hard glass or quartz glass. Further, in the above configuration, the temperature control of the plating solution may be carried out in the storage tank. The specific embodiments and examples described in the "Best Embodiments of the Invention" are merely illustrative of the technical contents of the present invention, and should not be construed as limited to the specific examples. The spirit of the present invention can be implemented in various variations within the scope of the patent application. INDUSTRIAL APPLICABILITY The present invention relates to a plating processing apparatus used in a manufacturing apparatus such as a semiconductor integrated circuit, and the like, and in particular, can be used for being required to be small and lightweight, (please read the back of the back sheet and fill in the page again) ) - Packing and setting 1«· -η 纸张 paper scale applicable to China National Standard (CNS) A4 specification (210X297 mm) ... -21 _ 1292000 A7 B7 V. Invention description (^ High-density installed information terminal, etc. The use of semiconductor integrated circuits assembled by electronic equipment. (Please read the notes on the back and fill in this page) ▼ Install·
、1T 經濟部智慧財產局員工消費合作社印製 ，'务紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -22-, 1T Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing, 'business paper scale applies China National Standard (CNS) A4 specification (210X297 mm) -22-