1291677 九、發明說明： • 【發明所屬之技術領域】 ， 本發明係有關一種液晶顯示器晝素之儲存電容結 構，尤其對於主動式矩陣型液晶顯示器之晝素儲存電容結 構，用以提高晝素之開口率，提升整體面板顯示之亮度。 【先前技術】 液晶顯示器（Liquid Crystal Display ; LCD)因具有低幅 射性以及體積輕薄短小之優點，故於使用上日漸廣泛，而 • 薄膜電晶體液晶顯示器（Thin Film Transistor LCD ; TFT LCD)因為其對比與視角之特點，在市場上目前仍為主流顯 示器。由於液晶本身材料不發光，使得TFT LCD之光源來 自背後光源，該背後光源經由TFT LCD之各層如偏光片、 彩色濾光片（color filter)等等材質，真正顯示的亮度大約只 有原發光光源之10%左右。也因為此亮度的不足，提高面 板開口率將可增進面板顯示亮度，現今如何提高顯示面板 上的畫素(pixel)的開口率，目前仍為所有面板研發人員所 ^ 致力的目標。 請參閱「第1圖」，係傳統TFT LCD之晝素結構圖示 意圖。習知技術顯示區結構，如圖所示係一種使用薄膜電 晶體開關元件（TFT)之主動矩陣型液晶顯示面板1〇之結 構實例。該液晶顯示面板10包含配置於每一矩陣區塊之 TFT 2與連接於TFT 2之源極電極（晝素電極）之晝素電容 裔1。該晝素電容器1包含一介於晝素電極與共通電極接 點4間之液晶層所形成之液晶電容器ia，與平行於該液晶 電容器la之儲存電容器比。液晶電容器la、儲存電容器 1291677 lb另一端電性連接至配置在對應基板之共通電極接點4。 • 掃描訊號線3電性連接至TFT 2之閘極電極，至於資料訊 一 號線5電性連接至TFT 2之汲極電極。該TFT 2藉由掃描 ’ 訊號線3提供之訊號使TFT 2處於開/關的狀態。當TFT 2被打開時，影像訊號電壓經由資料訊號線5供給至TFT 2 • 源極電極（晝素電極），藉由該TFT 2汲極電極對晝素電容 . 器1充電至相對應汲極電極的電壓準位。其中標號8與9 分別為配接至驅動晶片掃描訊號線接點8、資料訊號線接 ® 點9。 另該液晶顯示面板10設有靜電防護電路7介於掃描 訊號線3與等電位線接點6之間，及資料訊號線5與等電 位線接點6之間。當靜電電壓產生，此時藉由靜電防護電 路7將靜電電壓排除，因此可防止TFT 2免於遭受靜電電 壓之破壞。其中該靜電電壓的產生係因於製造液晶顯示裝 置之製程，在組合主動矩陣基板（在其上具有開關元件之 $ 基板）時，特別是於配置驅動電路晶片（Driver 1C)之製程 時所產生。 另請參閱「第2圖」，為一習知技術晝素佈局示意圖 ，包括TFT 11、遮光層13、由第一導電金屬層所形成之 掃描訊號線14、主動區15、由第二導電金屬層所形成之 資料訊號線16、晝素電極17與共通電極18，其製作儲存 電容的方式是由第一導電金屬層所形成之共通電極18與 由第二導電金屬層所形成之TFT 11源極電極（晝素電極) 對應之重疊區域19。另外該遮光層13係用以防止漏光’ 6 1291677 負責遮斷液晶顯示器内部多餘的背光模組的光線，使每一 個晝素間的光源不會互相干擾，提高顯示的對比度，如此 該晝素將可同時達到具有儲存電容及具有遮光效果。然而 在一定面積的情況下，此設計方法之開口率將不會太大， 因為形成該儲存電容所需之重疊區域19面積將不會太小 ，而該遮光層13也佔去一定的面積，對於顯示面板往高 解析度（畫素變小）的趨勢下，此設計方法將更壓縮其開口 率。 對於前述之缺失，美國專利US6262784提出一種利用 由第一導電金屬層形成之共通電極與與透明導電層-晝素 電極(如銦錫氧化物（ITO))之對應重疊區域形成一儲存電 容之結構，此設計方法雖較傳統之佈局方法有較高之開口 率，但由於其共通電極與晝素電極之間由於TFT元件製 程，因此具有二層絕緣層，其一為第一絕緣層-閘極絕緣 層，其二為第二絕緣層為保護層（passivation)，由兩平行板 間的電容公式可以得知，兩平板間的電容值會與平板間的 距離成反比，所以美國專利US6262784所揭露的由第一導 電金屬層-共通電極與透明導電層-晝素電極之厚度將會因 為該些絕緣層的厚度縮小不易，導致在需一定儲存電容值 之晝素設計下，勢必要要有一定之重疊區域，方可製作每 一晝素所需之儲存電容值。 【發明内容】 爰是，為解決上述之缺失，本發明之主要目的係在於 所提供之液晶顯示器晝素儲存電容之結構，該第二導電金 1291677 屬層形成之共通電極與由該透明導電層形成之晝素電極 - 之對應重疊區域夾置該第二絕緣層，作為該晝素存積電荷 之儲存電容形態。藉此可因為該第二絕緣層為單一厚度， • 且單一厚度的可控制特性，可較習知以較少之重疊面積就 可達到一晝素所需之儲存電容值，藉此本發明之晝素將可 _ 較習知提高其開口率，提升整體面板顯示之亮度。 本發明之次要目的在於該共通電極在與該晝素電極 ' 形成儲存電容的同時，藉由該共通電極之不透光性，所以 該共通電極可作為該晝素之遮光層，負責遮斷多餘的背光 • 模組的光線，提高整體顯示面板的對比度，不需如傳統需 另外再設置該遮光層。 本發明係一種液晶顯示器晝素儲存電容之結構，一種 液晶顯示器晝素儲存電容之結構，包括一基板，一第一導 電金屬層覆蓋於該基板，一第一絕緣層覆蓋於該第一導電 金屬層，一第二導電金屬層覆蓋於該第一絕緣層，一第二 絕緣層覆蓋於該第二導電金屬層，一晝素電極覆蓋於該第 二絕緣層，且該晝素電極之部分區域係對應於該第二導電 • 金屬層；俾藉該晝素電極與該第二導電金屬層對應重疊區 域，該疊區域間夾置該第二絕緣層以形成晝素儲存電容結 構。 其中該第二導電金屬層係包含一共通電極，由該第二 導電金屬層形成之共通電極，也因為金屬層之不透光性， 所以該共通電極同時可作為該晝素之遮光層，負責遮斷多 餘的背光模組的光線，使每一個晝素間的光源不會互相干 擾，提高整體顯示面板的對比度。 【實施方式】 8 1291677 茲有關本發明之詳細内容及技術說明，現配合圖式說 . 明如下： _ 清先參閱「第3圖」所示，係薄膜電晶體（TFT)之結構 - 剖面圖。以下將先介紹本發明之薄膜電晶體製程，首先一 第一導電金屬層形成TFT結構之閘極電極51與晝素之掃 描訊號線於一基板50表面，其材料的成膜是由濺鍍 (Sputter)設備來進行，其材料則使用鉬（M〇)、钽（Ta)、鉻 (Cr)、鎢（W)、鋁（A1)以及鋁合金所組成之族群或其任意組 _ 合’依需求也可製作積層（Multilayer)使用。其次一第一絕 緣層形成一閘極絕緣層52與一半導體層，其中該半導體 層的成膜是採用電漿輔助化學氣相沉積（PECVD)設備以連 續的方式進行閘極絕緣層52(如：SiNx)、a-Si:H本質層53、 以及n+Si歐姆接觸（〇hmic Contact)膜54，其中a-Si:H本 質層53與SiNX的閘極絕緣層52是連續成膜的，所以此 做法可以得到較好的SiNx與a-Si:H半導體膜的界面，接 著利用黃光及蝕刻模組形成該薄膜電晶體所需之主動層 區圖樣。隨後再以濺鍍鍍上一第二導電金屬層與利用黃光 • 製程形成薄膜電晶體結構之汲、源極電極55之圖樣，然 後用乾餘刻方式|虫刻背向通道端的n+Si歐姆接觸膜54， 接著再以薄膜製程進行化學氣相沈積一第二絕緣層56以 形成一保護層（passivati〇n)，接著再以黃光製程在欲製作不 同層金屬連接之處挖洞，接著再以濺鐘鍍上一透明導電層 形成之晝素電極57，如：氧化銦錫（indium tin 〇xide， ITO ) ’接著利用黃光製程形成晝素區域之圖樣，完成該薄 膜電晶體製程。 在說明本發明之該薄膜電晶體(TFT)之結構後，現請同 9 1291677 日守參閱「帛4、5圖」所示’係本發明 :施樣態。本發明包括一基板100;一第二導電:屬；覆 ”板HK)，且該第一導電金屬層係為該液晶顯示面 描訊號線11G·’ -第一絕緣層1()1覆蓋於該第一導 電金屬層；一第二導電金屬層覆蓋於該第一絕緣層ι〇ι， 且該第二導電金屬層係為該液晶顯示面板之資料訊號線 150及共通電極151 ;—第二絕緣層1〇2覆蓋於該第二導 電金屬層；-透明導電層形成之晝素電極削覆蓋於該第 :絕緣層102，且該晝素電極17〇之部分區域係對應於該 弟二導電金屬層之共通電極151;俾藉該晝素電極與該第 一 ^電金屬層形成之共通電極151間的對應重疊區域 200，該重豐區域2〇〇形成一種該晝素電極與該第二 導電金屬層夾置該第二絕緣層1〇2之電容結構。 本發明主要是利用該第二導電金屬層形成之共通電 ，151與由該透明導電層形成之晝素電極17〇對應之重疊 區域200，形成该晝素儲存電容之結構。該第一實施樣態 之結構包括：一薄膜電晶體(TFT)3〇〇、一第一導電金屬層 形成之掃描訊號線11〇圖案化於該基板1〇〇表面，其中該 晝素之掃描訊號線11〇係呈橫向樣態，且由該第一導電金 屬層所形成。一第二導電金屬層所形成呈縱向樣態之資料 訊號線150，及沿該晝素所内緣之共通電極151。然後再 沈積一第二絕緣層1〇2以形成保護層（passivati〇n)，一接觸 _ 152與一透明導電層所形成之晝素電極17〇(其中該接觸 窗152係用於連接該薄膜電晶體300之源極與該晝素電極 17〇)，透過該共通電極151與部分該晝素電極170所形成 之對應重疊區域2〇〇夾置該第二絕緣層1〇2，作為該晝素 1291677 存積電荷之儲存電容形態。 - 請參閱「第6圖」所示，係本發明之晝素結構之第二 實施樣態。相同的針對本發明之精神利用該第二導電金屬 • 層形成之共通電極151與該透明導電層形成之晝素電極 170之對應對重疊區域200,形成該畫素之儲存電容結構。 第二實施樣態與第一實施樣態不同處係原本由第一導電 金屬層所形成之掃描訊號線110改呈縱向樣態，由第二導 電金屬層所形成之資料訊號線150改呈橫向樣態。該第二 實施樣態之晝素結構包括：一薄膜電晶體300，一掃描訊 * 號線110圖案化於一基板100表面，其中呈縱向樣態之掃 描訊號線110係由該第一導電金屬層所形成。一第二導電 金屬層所形成呈橫向樣態之資料訊號線150,及位於該畫 素所内緣之共通電極151。然後再沈積一第二絕緣層102 以形成保護層（passivation)，一接觸窗152與一透明導電 層所形成之晝素電極170,（其中該接觸窗152係用於連接 該薄膜電晶體300之源極與該晝素電極170)，透過該共通 電極151與晝素電極170對應部分處夾置該第二絕緣層 φ 102，作為晝素存積電荷之儲存電容形態。 又，本發明中該第二導電金屬層所行成之共通電極 151在與部分晝素電極170之對應重疊區域200形成該儲 存電容的同時，藉由該第二導電金屬層之不透光性，該共 通電極151可同時作為該晝素之遮光層，負責遮斷多餘的 背光模組的光線，提高整體顯示面板的對比度，不需如傳 統需另外再設置該遮光層。 惟上述僅為本發明之較佳實施例而已，並非用來限定 本發明實施之範圍。即凡依本發明申請專利範圍所做的均 11 1291677 ^文化與修飾，皆為本發明專利範圍所涵 【圖式簡單說明】 =，係傳統TFT LCD之晝素結構圖示意圖。 圖，係習知技術晝素結構示意圖。 f 3圖，係薄膜電晶體之結構示意圖。 弟4圖’係本發明之晝素結構第 第5¾Δ ^實施樣悲不意圖 ★ 口 你弟4圖Α-Α之剖面圖。1291677 IX. Description of the invention: • The technical field of the invention relates to a storage capacitor structure of a liquid crystal display, especially for a monolithic storage capacitor structure of an active matrix liquid crystal display, for improving the quality of the pixel The aperture ratio increases the brightness of the overall panel display. [Prior Art] Liquid crystal display (LCD) is widely used due to its low radiation and shortness and thinness. • Thin Film Transistor LCD (TFT LCD) Its contrast and perspective characteristics are still mainstream displays in the market. Since the material of the liquid crystal itself does not emit light, the light source of the TFT LCD is from the back light source, and the back light source is made of various layers of the TFT LCD such as a polarizer, a color filter, etc., and the brightness of the real display is only about the original light source. About 10%. Also because of the lack of brightness, increasing the panel aperture ratio will increase the brightness of the panel display. How to improve the aperture ratio of the pixel on the display panel is still the goal of all panel developers. Please refer to "Figure 1" for the purpose of the traditional TFT LCD. The structure of the prior art display area is shown in the figure as an example of the structure of an active matrix type liquid crystal display panel 1 using a thin film transistor switching element (TFT). The liquid crystal display panel 10 includes a TFT 2 disposed in each matrix block and a halogen capacitor 1 connected to a source electrode (a halogen electrode) of the TFT 2. The halogen capacitor 1 includes a liquid crystal capacitor ia formed by a liquid crystal layer between the halogen electrode and the common electrode contact 4, and a storage capacitor ratio parallel to the liquid crystal capacitor la. The other end of the liquid crystal capacitor la and the storage capacitor 1291677 lb is electrically connected to the common electrode contact 4 disposed on the corresponding substrate. • The scanning signal line 3 is electrically connected to the gate electrode of the TFT 2, and the data line 5 is electrically connected to the drain electrode of the TFT 2. The TFT 2 causes the TFT 2 to be in an on/off state by scanning the signal supplied from the signal line 3. When the TFT 2 is turned on, the image signal voltage is supplied to the TFT 2 via the data signal line 5 • the source electrode (the halogen electrode), and the pixel 2 is charged to the corresponding drain by the TFT 2 drain electrode. The voltage level of the electrode. Reference numerals 8 and 9 are respectively connected to the driving wafer scanning signal line contact 8, and the data signal line connection ® point 9. Further, the liquid crystal display panel 10 is provided with an electrostatic protection circuit 7 interposed between the scanning signal line 3 and the equipotential line contact 6, and between the data signal line 5 and the isoelectric line contact 6. When an electrostatic voltage is generated, the electrostatic voltage is removed by the electrostatic protection circuit 7, and thus the TFT 2 can be prevented from being damaged by the electrostatic voltage. The electrostatic voltage is generated by the process of manufacturing the liquid crystal display device, when the active matrix substrate (the substrate having the switching element thereon) is combined, especially when the process of the driver circuit (Driver 1C) is configured. . Please refer to FIG. 2 , which is a schematic diagram of a conventional technology, including a TFT 11 , a light shielding layer 13 , a scan signal line 14 formed by a first conductive metal layer, an active region 15 , and a second conductive metal. The data signal line 16, the halogen electrode 17 and the common electrode 18 formed by the layer are formed by the common electrode 18 formed by the first conductive metal layer and the TFT 11 source formed by the second conductive metal layer. The pole electrode (the halogen electrode) corresponds to the overlap region 19. In addition, the light shielding layer 13 is used to prevent light leakage. 6 1291677 is responsible for blocking the light of the excess backlight module inside the liquid crystal display, so that the light source between each element does not interfere with each other, thereby improving the contrast of the display, so that the element will It can achieve both storage capacitance and shading effect. However, in the case of a certain area, the aperture ratio of the design method will not be too large, because the area of the overlap region 19 required to form the storage capacitor will not be too small, and the light shielding layer 13 also occupies a certain area. For the trend of the display panel to high resolution (the pixel becomes smaller), this design method will compress its aperture ratio more. For the aforementioned deletion, US Pat. No. 6,262,784 proposes a structure in which a storage capacitor is formed by a common electrode formed of a first conductive metal layer and a corresponding overlapping region with a transparent conductive layer-halogen electrode (such as indium tin oxide (ITO)). Although this design method has a higher aperture ratio than the conventional layout method, since the common electrode and the halogen electrode are processed by the TFT element, there are two insulating layers, one of which is the first insulating layer-gate The insulating layer, the second of which is the second insulating layer is a passivation. It can be known from the capacitance formula between the two parallel plates that the capacitance between the two plates is inversely proportional to the distance between the plates, so that the US Pat. No. 6,262,784 discloses The thickness of the first conductive metal layer - the common electrode and the transparent conductive layer - the halogen electrode will be difficult to reduce due to the thickness of the insulating layer, so that it is necessary to have a certain density design The overlap area is used to create the storage capacitor value required for each element. SUMMARY OF THE INVENTION In order to solve the above-mentioned shortcomings, the main object of the present invention is to provide a structure of a liquid crystal display pixel storage capacitor, the second conductive gold 1291677 is a common electrode formed by a layer and the transparent conductive layer The second insulating layer is interposed between the corresponding overlapping regions of the formed halogen electrodes as a storage capacitor form of the stored charge of the halogen. Therefore, because the second insulating layer has a single thickness, and a controllable characteristic of a single thickness, the storage capacitor value required for a single element can be achieved with a small overlap area, thereby the present invention. The sputum will be able to increase its aperture ratio and increase the brightness of the overall panel display. A secondary object of the present invention is that the common electrode forms a storage capacitor with the halogen electrode and the opaque property of the common electrode, so that the common electrode can serve as a light shielding layer of the halogen, and is responsible for interrupting Excessive backlighting • The light from the module increases the contrast of the overall display panel, eliminating the need to additionally set the shading layer as is conventional. The invention relates to a structure of a liquid crystal display pixel storage capacitor, a structure of a liquid crystal display pixel storage capacitor, comprising a substrate, a first conductive metal layer covering the substrate, and a first insulating layer covering the first conductive metal a second conductive metal layer covering the first insulating layer, a second insulating layer covering the second conductive metal layer, a halogen electrode covering the second insulating layer, and a partial region of the halogen electrode Corresponding to the second conductive metal layer; corresponding to the overlapping area of the second conductive metal layer, the second insulating layer is interposed between the stacked regions to form a halogen storage capacitor structure. Wherein the second conductive metal layer comprises a common electrode, and the common electrode formed by the second conductive metal layer is also opaque to the metal layer, so the common electrode can also serve as the light shielding layer of the halogen. The light of the excess backlight module is blocked, so that the light sources between each pixel do not interfere with each other, and the contrast of the overall display panel is improved. [Embodiment] 8 1291677 The details and technical description of the present invention are now described in conjunction with the drawings. The following is a clear description of the structure of the thin film transistor (TFT) as shown in "Figure 3". . Hereinafter, the thin film transistor process of the present invention will be described. First, a first conductive metal layer forms a gate electrode 51 of a TFT structure and a scanning signal line of a halogen substrate on a surface of a substrate 50, and the film formation of the material is performed by sputtering ( Sputter) equipment is made of materials such as molybdenum (M〇), tantalum (Ta), chromium (Cr), tungsten (W), aluminum (A1) and aluminum alloy or any group thereof. Requirements can also be used to create a layer (Multilayer). Next, a first insulating layer forms a gate insulating layer 52 and a semiconductor layer, wherein the film formation of the semiconductor layer is performed in a continuous manner by a plasma assisted chemical vapor deposition (PECVD) device (eg, :SiNx), a-Si:H intrinsic layer 53, and n+Si ohmic contact film 54, wherein the a-Si:H intrinsic layer 53 and the SiNX gate insulating layer 52 are continuously formed into a film, Therefore, this method can obtain a better interface between the SiNx and the a-Si:H semiconductor film, and then use the yellow light and the etching module to form the active layer region pattern required for the thin film transistor. Subsequently, a second conductive metal layer is plated by sputtering and a pattern of the germanium and source electrodes 55 formed by the yellow light process to form a thin film transistor structure, and then dry-engraved|inserts n+Si facing away from the channel end The ohmic contact film 54 is then chemically vapor-deposited by a thin film process to form a second insulating layer 56 to form a protective layer, and then a yellow light process is used to dig holes in the joints where different layers of metal are to be formed. Then, a halogen electrode 57 formed by a transparent conductive layer, such as indium tin 〇xide (ITO), is coated with a splashing clock, and then a pattern of the halogen region is formed by a yellow light process to complete the thin film transistor process. . After explaining the structure of the thin film transistor (TFT) of the present invention, please refer to the description of "Fig. 4, 5" for the purpose of the present invention. The present invention includes a substrate 100; a second conductive: genus; a "substrate HK", and the first conductive metal layer is the liquid crystal display surface trace line 11G · ' - the first insulating layer 1 () 1 is covered a first conductive metal layer; a second conductive metal layer covering the first insulating layer ι〇ι, and the second conductive metal layer is the data signal line 150 and the common electrode 151 of the liquid crystal display panel; An insulating layer 1 2 covers the second conductive metal layer; a transparent electrode formed by the transparent conductive layer is covered over the first insulating layer 102, and a portion of the germanium electrode 17 is corresponding to the second conductive layer a common electrode 151 of the metal layer; a corresponding overlap region 200 between the pixel electrode and the common electrode 151 formed by the first metal layer, the double region 2 forming a halogen electrode and the second The conductive metal layer sandwiches the capacitor structure of the second insulating layer 〇2. The present invention mainly utilizes the co-energization formed by the second conductive metal layer, and the 151 overlaps with the halogen electrode 17〇 formed by the transparent conductive layer. The region 200 forms a structure of the halogen storage capacitor. The structure of the first embodiment includes: a thin film transistor (TFT) 3?, a scan signal line 11 formed by a first conductive metal layer is patterned on the surface of the substrate, wherein the scan signal of the pixel The line 11 is in a lateral state and is formed by the first conductive metal layer. A second conductive metal layer forms a longitudinal signal line 150 and a common electrode 151 along the inner edge of the element. Then, a second insulating layer 1 〇 2 is deposited to form a protective layer, a contact 152 and a transparent conductive layer formed of a halogen electrode 17 〇 (where the contact window 152 is used to connect the film) The source of the transistor 300 and the pixel electrode 17A) are interposed between the common electrode 151 and a portion of the corresponding overlap region 2 formed by the pixel electrode 170, and the second insulating layer 1〇2 is interposed as the 昼The storage capacitor form of the stored charge 1291677 - see the "Figure 6", which is the second embodiment of the halogen structure of the present invention. The same pair of overlapping electrodes 200 formed by the common electrode 151 formed by the second conductive metal layer and the transparent electrode layer formed by the transparent conductive layer for the spirit of the present invention form a storage capacitor structure of the pixel. The difference between the second embodiment and the first embodiment is that the scanning signal line 110 formed by the first conductive metal layer is changed to a vertical state, and the data signal line 150 formed by the second conductive metal layer is changed to a horizontal direction. Style. The semiconductor structure of the second embodiment includes: a thin film transistor 300, a scanning signal line 110 is patterned on the surface of a substrate 100, wherein the scanning signal line 110 in a longitudinal state is composed of the first conductive metal The layer is formed. A second conductive metal layer forms a data signal line 150 in a lateral state and a common electrode 151 located on the inner edge of the pixel. Then, a second insulating layer 102 is deposited to form a passivation, a contact window 152 and a transparent conductive layer formed by the transparent electrode 170, wherein the contact window 152 is used to connect the thin film transistor 300. The source and the halogen electrode 170) are interposed between the common electrode 151 and the corresponding portion of the halogen electrode 170, and the second insulating layer φ 102 is interposed as a storage capacitor form of the stored charge of the pixel. Moreover, in the present invention, the common electrode 151 formed by the second conductive metal layer forms the storage capacitor in a corresponding overlapping region 200 with the partial halogen electrode 170, and the opaque property of the second conductive metal layer The common electrode 151 can serve as the light shielding layer of the halogen at the same time, and is responsible for blocking the light of the excess backlight module and improving the contrast of the overall display panel, without the need to additionally set the light shielding layer as in the conventional. The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the present invention. That is, all the 11 1291677 ^ cultures and modifications made according to the scope of the patent application of the present invention are all covered by the scope of the invention. [Simple description of the figure] =, is a schematic diagram of the structure of the traditional TFT LCD. The figure is a schematic diagram of the structure of the conventional technology. Fig. 3 is a schematic view showing the structure of a thin film transistor.弟4图' is the 昼 structure of the present invention. The fifth ⁄ Δ 实施 实施 ★ ★ ★ ★ 你 你 你 你 你 你 你 你 你 你 你 你 你 你 你 你 你 你 你 你
=圖係本發明之晝素結構之第二實施樣態示意圖 L主要元件符號說明】 【習知】 晝素電容器1 TFT 2、11= Figure 2 is a schematic diagram of the second embodiment of the pixel structure of the present invention. L main component symbol description] [Practical] Alizarin capacitor 1 TFT 2, 11
液晶電容器la 儲存電容器lb 掃描訊號線3 共通電極接點4 資料訊號線5 等電位線接點6 靜電防護電路7 掃描訊號線接點8 資料訊號線接點9 液晶顯示面板10 遮光層13 掃描訊號線14 主動區15 資料訊號線16 1291677 晝素電極17 • 共通電極18 ~ 重疊區域19 V 【本發明】 基板50、100 • 閘極電極51 閘極絕緣層52 '本質層53 歐姆接觸膜54 没、源極電極5 5 第二絕緣層56、102 晝素電極57、170 第一絕緣層101 掃描訊號線110 資料訊號線150 共通電極151 接觸窗152 • 重疊區域200 薄膜電晶體300 13Liquid crystal capacitor la storage capacitor lb scan signal line 3 common electrode contact 4 data signal line 5 equipotential line contact 6 electrostatic protection circuit 7 scanning signal line contact 8 data signal line contact 9 liquid crystal display panel 10 light shielding layer 13 scanning signal Line 14 Active area 15 Data signal line 16 1291677 Alizarin electrode 17 • Common electrode 18 ~ Overlapping area 19 V [Invention] Substrate 50, 100 • Gate electrode 51 Gate insulating layer 52 'Essence layer 53 Ohmic contact film 54 No , source electrode 5 5 second insulating layer 56, 102 halogen electrode 57, 170 first insulating layer 101 scanning signal line 110 data signal line 150 common electrode 151 contact window 152 • overlapping region 200 thin film transistor 300 13