TWI290311B - Active matrix organic light emitting diode pixel circuit with current auto compensated function - Google Patents
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- 229920001621 AMOLED Polymers 0.000 title claims abstract description 16
- 239000010409 thin film Substances 0.000 claims description 47
- 239000011159 matrix material Substances 0.000 claims description 31
- 230000005540 biological transmission Effects 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 210000004508 polar body Anatomy 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 238000005286 illumination Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 20
- 230000007423 decrease Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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Abstract
Description
1290311 五、發明說明(1)1290311 V. Description of invention (1)
發明所屬之技術頜述 本發明是有關於一 路,且特別是有關於一 發光二極體像素電路。 種主動矩陣有機發光二極體像素電 種可自動補償電流之主動矩陣有機 先前技術 隨著資訊科技的發達,各式各樣如電腦、行動電話、 個人數位助理(PDA)及數位相機等資訊設備,均不斷地 推陳出新。在這些資訊設備中,顯示器始終扮演著舉足輕 重之地位,而平面顯示器(Flat Panel Display)由於具有 薄型化、輕量化及省電之特性,乃逐漸地受到歡迎。 在各種平面顯示器中,主動矩陣有機發光二極體(Ac一tive Matrix Organic Emitting Diode,簡稱AM0LED) 顯不器因具有視角廣、色彩對比效果好、響應速度快及成 ^低等優點,故十分適用於如電子時鐘、行動電話、個人 位助理及數位相機等小尺寸顯示器之應用。 。然而’在主動矩陣有機發光二極體(AM〇LED)像素電路 ^知作過程中,由於其有機發光二極體⑶^㈧元件的跨 。’會隨著操作時間的增加而逐漸地上升,連帶也會影響 薄膜電晶體(Thin Film Transistor,簡稱TFT)的汲 係ί I'極的電壓。一般而言,有機發光二極體之顯示亮度 #、*、〃IL、工有機發光二極體之電流I d成正比,而流經有機發 光二,體之電流Id的計算則如下式: ^薄膜電晶體為N型且Vds小於Vgs-Vt時 Id==kJ (W/L)[(Vgs-Vt)Vds-(l/2)(Vds)(Vds)]. . (1)BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates generally to one aspect, and more particularly to a light emitting diode pixel circuit. Active matrix organic light-emitting diode pixel type can automatically compensate current active matrix organic prior art With the development of information technology, various information devices such as computers, mobile phones, personal digital assistants (PDAs) and digital cameras They are constantly introducing new ideas. Among these information devices, displays have always played a pivotal role, and flat panel displays have become increasingly popular due to their thinness, light weight and power saving features. Among various flat panel displays, the Active Matrix Organic Emitting Diode (AM0LED) has advantages such as wide viewing angle, good color contrast effect, fast response speed and low performance. Suitable for applications such as electronic clocks, mobile phones, personal assistants and digital cameras. . However, in the active matrix organic light-emitting diode (AM〇LED) pixel circuit, it is known because of its organic light-emitting diode (3) ^ (8) component span. ‘ will gradually increase as the operating time increases, and it will also affect the voltage of the Thin Film Transistor (TFT). In general, the display brightness of the organic light-emitting diodes #, *, 〃IL, and the current I d of the organic light-emitting diode are proportional to each other, and the current Id flowing through the organic light-emitting diode is calculated as follows: ^ When the thin film transistor is N-type and Vds is smaller than Vgs-Vt, Id==kJ (W/L)[(Vgs-Vt)Vds-(l/2)(Vds)(Vds)]. (1)
第5頁 1290311 五、發明說明(2) 當薄膜電晶體為N盤且Vds大於或等於Vgs-Vt時Page 5 1290311 V. Description of invention (2) When the thin film transistor is N disk and Vds is greater than or equal to Vgs-Vt
Id = (l/2)kJ (W/L)(Vgs-Vt) (Vgs-Vt) ............(2) 當薄膜電晶體為P型且Vsd小於Vsg-Vt時Id = (l/2)kJ (W/L)(Vgs-Vt) (Vgs-Vt) ............(2) When the thin film transistor is P type and Vsd is smaller than Vsg- Vt
Id-k5 (W/L)[(Vsg-Vt)Vsd-(l/2)(Vsd)(Vsd)]..(3) 當薄膜電晶體為P型且Vsd大於或等於Vsg-Vt時Id-k5 (W/L)[(Vsg-Vt)Vsd-(l/2)(Vsd)(Vsd)]..(3) When the thin film transistor is P type and Vsd is greater than or equal to Vsg-Vt
Id-(l/2)k,(W/L)(Vsg-Vt) (Vsg-Vt)............⑷ 故知’當Vgs(或Vsg)或Vds(或Vsd)因為有機發光二極體元 件跨壓的上昇而下降時,便會影響到流經有機發光二極體 之電流I d變小,進而影響到顯示器面板的亮度。此外,由 於使用者播放的晝面及時間之不同,導致各像素中之有機 叙光一極體兀件跨壓的上昇幅度也會不同,於是造成整個 了顯示亮度下降之外,&會有晝面不均的現象。 發明内容 陣有=ί ί此,本發明提供一種可自動補償電流之主動矩 壓上昇昧,电 其可於有機發光二極體之跨 自動補償流經有機發光二極體之電流。 ,、、'達上述及其他目的, 一 >;之主動矩陣有機發光二極體像素自:補償電 流之主動矩陣有機_:=侬素电路。此可自動補償電 機發光二極體像素極體像素電路包括:主動矩陣有 鲁 二極體像素具有笋光負載。其中,主動矩陣有機發光 陣有機發光二:體用之有機發光二極體,且主動起 極體之電流傳送路彳^的=顯不焭度,係由流經有機發光二 置於上述之電流傳送路η:戶:f疋:而主動負載則配 二1便自動補償流經有機發光〜Id-(l/2)k, (W/L)(Vsg-Vt) (Vsg-Vt)............(4) Knowing that 'when Vgs (or Vsg) or Vds (or Vsd) When the organic light-emitting diode element is lowered across the voltage, the current I d flowing through the organic light-emitting diode is reduced, which affects the brightness of the display panel. In addition, due to the difference in the playing time and time of the user, the increase in the cross-pressure of the organic light-emitting element in each pixel will be different, thus causing the entire display brightness to drop. Uneven phenomenon. SUMMARY OF THE INVENTION The present invention provides an active moment riser that automatically compensates for current, which automatically compensates for current flowing through the organic light-emitting diode across the span of the organic light-emitting diode. , , , 'To achieve the above and other purposes, a >; active matrix organic light-emitting diode pixel from: active current matrix of compensation current _: = halogen circuit. The circuit module for automatically compensating for the LED body of the LED includes: the active matrix has a diode and has a bamboo light load. Among them, the active matrix organic light-emitting array organic light-emitting diode 2: the organic light-emitting diode for the body, and the current-transmitting current of the active polar body is 显^, which is the current flowing through the organic light-emitting diode Transmission path η: household: f疋: and the active load is equipped with two 1 will automatically compensate for the flow through the organic light ~
10765t.wf.ptd 麵10765t.wf.ptd face
第6頁 1290311 五、發明說明(3) 極體的電流 括:ί:Ν實型施曰其主動矩陣有機發光二極體像素包 機發光二極體4Λν曰體:t 薄膜電晶體、電容及有 極、第-汲Ξ及Γ,Γ?薄膜電晶體具有第-間 間極、第二沒匕源;朽第:::型薄臈電晶體具有第二 有機發光二極體則1^ ώ ^ 为弟一端及第二端; w 為:第-間極端。其_係則 極.禺接第一=接ί描;極接資料、線,第二間 第二間極,及極㈣至電源正端端輕接 陰極端•接弟二源極,陽極端-接第二源極, 流傳Ϊ:,:將=負載配置於陽極端與第二源極間之電 門Γ 或將主動負載配置於電源正端盥笛_、 間之電流傳送路徑上。 而/、弟一 /及極 在另一實施例中,盆主動矩陳右 括:ν型薄膜電晶體、Ρ型薄二極體像素包 極體。其中,n型薄膜Λ體且va:、,容及有機發光二 弟::原極;p型薄膜電晶體具有第二間極、第、、及;= 一源極;電容且古楚 山η斤 弟一及極及弟 陽極端及吟極5 f知及弟二端;有機發光二極體具有 而及G極缟。其耦接關係則為: /、β J :第-汲極耦接資料線,第二閘極耦接第】_ % ^ ^ 原而,弟一知耦接第二閘極,第-端耦桩 弟-源極,陽極端耦接第二汲極 ::知耦接 端。 u k極編耦接至電源負Page 6 1290311 V. Invention Description (3) The current of the polar body includes: ί: Ν 型 曰 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 : : : : : : : : : : : : : : : : Pole, 汲Ξ-汲Ξ and Γ, Γ? The thin film transistor has a first-to-interstitial and a second-free source; the dyad:::-type thin-twisted transistor has a second organic light-emitting diode, 1^ ώ ^ For the younger end and the second end; w is: the first - the extreme. The _ system is extremely 禺 禺 第一 = = ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; - Connect to the second source, pass Ϊ:,: Configure the load to be placed between the anode terminal and the second source, or place the active load on the current transmission path between the positive terminal and the source. And /, brother / / pole In another embodiment, the basin active moment is right: ν-type thin film transistor, Ρ-type thin diode pixel package. Wherein, the n-type thin film body and va:, and the organic light emitting second brother:: the primary pole; the p-type thin film transistor has a second interpole, the first, the and; = a source; the capacitor and the Guchu Mountain η The younger one and the other are the anode end and the bungee pole 5 f and the second end of the brother; the organic light-emitting diode has the G and the extreme. The coupling relationship is: /, β J : the first-pole is coupled to the data line, the second gate is coupled to the first _ % ^ ^, and the second is coupled to the second gate, the first-end coupling The pile-source, the anode end is coupled to the second drain:: the coupling end. u k pole is coupled to the power supply negative
1290311 五、發明說明(4) 其中,係將主動負載配置於陽極 流傳廷路徑上,或將主動負載配置於::弟一汲極間之電 間之電流傳送路徑上。 於电源正端與第二源極 在又一實施例中,其主動矩障 括:第-N型薄膜電晶體、第 :極體像素包 極、第-汲;及^源膜電晶體具有第-開 有機,4 ;電容具有第-端及第二端. 以i:;二ΐ有?極端及陰極端。其耦接關係為 ⑺極祸接~描線,第一汲極耦 门 接第-源極,第1心接2耦接貝枓線,帛二間極耦 間極電源負#,第一端福接第二 弟一 ^輕接弟二源極, 陰極端耦接第二汲極。 而柄拱至电源正端’而 流傳送路栌:將㊁=2:置於陰極端與第二汲極間之電 間之電流;送路::負載配置於電源負端與第二源極 在-起Ϊν型上薄逑膜實:二之主動負載可以為閘極與沒極連接 起。型薄A:晶體’亦可以為間極與"極連接在- 動補:i ϊ:=中:知’應'用本發明所提供之一種可自 二流傳送路捏之主動負載,在有機發br,則因配 :½ ’其跨壓也會隨著電流 亟體之跨壓 致流經有機發光二極體之電流的上;,故;進而導 ^自動補償流經 五、發明說明(5) 有機發光二極體之電流。 為讓本發明之上述和其 顯易懂,下文特以較佳每=目的、特徵、和優點能更明 說明如下: 、、並配合所附圖式,作詳細 清參看第1圖所示,盆兔 有機發光二極體像素示意圖、'。貝知一例使用之主動矩陣 發光二極體像素包括:第一N曰顯不,此主動矩陣有機 薄膜電晶體120、電容130及有/f電晶體110、第二N型 方式為第一N型薄膜電晶體11〇之』亟,140。其耦接 -汲極連接資料線、第一源極則、鱼拉:f連接掃描線、第 第二N型薄膜電晶體12〇第、,谷130之第一端與 ⑵之第二汲極連接電源二:極第 U極鳊則連接至電源負端。 如前所述,有機發光二極體丄 有機發光二極體14〇之電浐Id 之颈不焭度係與流經 極體140之帝t ;,L成正比,而流經有機發光二 掃描Λ分Λ"Λ(11式⑵之計算所示。當 以將資料線之恭=素日Γ二ν通第一 Ν型薄膜電晶體11 0, 極,庐得門朽:壓傳送至第二Ν型薄膜電晶體120之第二閘 Wed Λ Ν _。假設有機發光二極體1 40之跨壓為 壓Vds分別工型薄膜電晶體120之閘源電壓Vgs與没源電1290311 V. INSTRUCTIONS (4) Among them, the active load is placed on the anode flow path, or the active load is placed on the current transmission path between the two: In another embodiment of the power source positive terminal and the second source, the active matrix barrier includes: a first-N type thin film transistor, a: a polar body pixel package, a first-electrode; and a source film transistor has a first - Open organic, 4; Capacitor has a first end and a second end. With i:; Extreme and cathode ends. The coupling relationship is (7) the fault is connected to the trace line, the first drain pole is connected to the first source, the first core is connected to the beta line, and the second pole is coupled to the pole power supply. #第一端福The second brother is connected to the second source, and the cathode end is coupled to the second drain. And the handle arch to the positive end of the power supply and the flow transmission path: the second = 2: the current between the cathode and the second drain; the way: the load is placed at the negative end of the power supply and the second source On the - Ϊ 型 type on the thin film: the active load of the two can be connected to the gate and the pole. Type thin A: crystal 'can also be interpolar and " pole connected in - dynamic complement: i ϊ: = in: know 'should' with the active load that can be self-twisted by the two-way transmission path provided by the present invention, in organic Hair br, then with: 1⁄2 'the cross-pressure will also flow through the current of the organic light-emitting diode with the voltage across the body; therefore, the automatic compensation flow through the fifth, the invention description ( 5) Current of the organic light emitting diode. In order to make the above description of the present invention easier to understand, the following description of the preferred embodiments, the features, and the advantages of the present invention will be more clearly described as follows: Basin rabbit organic light-emitting diode pixel diagram, '. The active matrix light-emitting diode pixel used in one example includes: the first N-turn display, the active matrix organic thin film transistor 120, the capacitor 130 and the /f transistor 110, and the second N-type mode is the first N-type Thin film transistor 11 亟, 140. The coupling-drain connection data line, the first source, the fish pull: the f-connected scan line, the second N-type thin film transistor 12〇, the first end of the valley 130 and the second drain of the (2) Connect the power supply two: the pole U pole is connected to the negative end of the power supply. As described above, the organic light-emitting diode 丄 organic light-emitting diode 14 〇 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 浐 颈 颈 颈 颈 颈 颈 颈 颈 颈 颈 颈 颈 颈 颈 颈 颈Λ Λ Λ quot Λ 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 The second gate of the 薄膜-type thin film transistor 120 is Wed Λ _ _. It is assumed that the voltage across the organic light-emitting diode 1 40 is the voltage Vds, and the gate voltage Vgs of the thin film transistor 120 is different from the source.
Vgs ' V§ - Vs = Vg - (VSS + Voled)Vgs ' V§ - Vs = Vg - (VSS + Voled)
1290311 五、發明說明(6)1290311 V. Description of invention (6)
Vds = Vd - Vs ^ Vdd ^ rvss ^ v ) 由於第二N型薄膜電晶體12()之臨界 f ed) (1)與式(2 )之計管々,而7 > 包仏Vt為已知’故由式 料線之電壓值 '二,當有機::之,:亮度,來傳送資 上升時,明顯地,Vgs及Vds就‘ ^ =二之跨:V— 二極體M0的電流Id也會跟著下降。 k經有機發光 f參看第2圖所示,其為根據本發明第一每 動矩陣有機發光二極體像素電路圖。 貝,彳之^主 圖之第—N型薄膜電晶體1 1 0、第二N型"薄膜币不曰’矛、了第1 容130及有機發光二極體14〇 第=1120、電 薄膜電晶體120之第二货托^更於弟1圖中,由第二Ν型 140所形成之電流傳送路徑中弟; = 發光二極體 之Ν型薄膜電晶體所形成之主動負〇丫極連接在-起 二極體uo之陽極端與第二源極^載m㉟置於有機發光 因此,當有機發光二極體140之跨壓ν〇 致流經有機發光二極體14〇的 ,、 ^ r, ^ T „ #Vgs ,Vds τ /Λ; 10 i 1:而可自動補償流經有機發光二極體140的電汽Id。 與第4圖所示,其中實:二 置動負載2 1〇之Vs電壓上升曲線與1(1電流下 虛線部分則為配置主動負載21〇後之Vs電壓上的j 電流下降曲線。明顯地,已可補償流經 升曲線與 ⑷”流Id之下降情形,而達到自動補償= 先果-。極體 清參看第5圖所示,其為根據本發明第一實施例之另 10765twf,ptd 第10頁 !29〇311 五、發明說明(7) 〜種主動矩陣有機發光二 =是,此像素電路係將二;2::,。與第2圖不同 电晶體所形成之主動負載51 接在一起之N型薄膜 N型薄膜電晶體120之第% & „置於電源正端Vdd與第二 作法可以藉由補㈣s下―降,電流傳送路徑上此種 有機發光二極體U〇的電流Η = |而達到自動補償流經 請參看第6圖所示,i1咸。 有機發光二極體像素示咅,、圖為二二二施例使用之主動矩陣 發光二極體像素包括.W圖中』不’此主動矩陣有機 體620、電容63 0及有機薄膜電晶體610、P型薄膜電晶 薄膜電晶體6 ! 0之第極/640 °其福接方式為N型 料線、第一、、原托,甲1木連接知描線、第一汲極連接資 6 20之第二門^貝1 , f〒容63 0之第一端與P型薄膜電晶體 63 0之第-二盥,P型薄膜電晶體6 2 0之第二源極連接電容 體64^^ ^電源正端恤、第二汲極連接有機發光二極 源負端Vss而,有機發光二極體64〇之陰極端則連接至電 1/ ^ 樣地,當有機發光二極體64 0之跨壓V〇led上升時, 光-彳/ϋ,由式(3)之計算式可知,將導致流經有機發 ::極體640的電流Id也會跟著下降,故需如第7圖與第8 圖所不之自動補償電路。 右Lt ΐ第7圖’其為根據本發明第二實施例之主動矩 型薄二體像素1路圖。圖中顯示’除了第6圖之Ν ,二日日體610、P型薄膜電晶體62〇、電容63〇及有機發 一盈-640外,更於第6圖中,由p型薄膜電晶體62〇之第 10765twf ,pt.d 1290311 "― 丨《_丨. 五、發明說明(8) 二,極第一及極與有機發光二極^ ^ ^ ^ ^ ^ ^ 極與汲極連接在-起之^薄以ΐ 形成之主動負載71〇,献班士人^> 包日日體所 間。 戰0配置於電源正端Vdd與第二源極之 因此,當有機發光二極體640之跨壓Vo ied上升 致流經有機發光二極5 〇iea上升,而導 之跨壓也會下降,==流Id下降時’主動負載7Π ^ ^ . ί :: 7- FIV; "# ^,J ^ ^ ^ 請參看第8圖所示,V1;—ipH640的電流Id。 一種主動矩陣有機發光二 /楚Γ 的是,此像素電路係將間朽路圖。與弟7圖不同 電晶體所形成之主動負』:i 〇、没極連接在一起之p型薄膜 晶體620之第二汲極間的 塞配:f陽極端與?型薄膜電 可以藉由補償Vsd下降之:;,:動法同樣 發光二極體640的電流Id之效果。】自動補“ k經有機 睛參看第9圖所示,1兔 一 有機發光二極體像素示意圖'弟二,:例使用之主動矩陣 發光二極體像素包括:帛固?: ’此主動矩陣有機 薄膜電晶體920、電容93n月女/#胲电晶體910、第二N型 方式為第一N型薄膜電晶於機f光二極體94〇。其耦接 一汲極連接資料線、、^日—之第—閘極連接掃描線、第 第二N型薄膜電二極=接!容… 920之第二汲極連接有弟一閘極,弟二N型薄膜電晶體 極連接電容93〇之第二浐極體94〇之陰極端,第二源 而,、甩源負端VsS,有機發光二極體 l〇765twf.ptd 第12頁 1290311 五、發明說明(9) 940之陽極端則連接至電源正端Vdd。 當有機發光二極體940之跨壓v〇led上升時,vds就會 下IV由式(1 )之计异式可知,將導致流經有機發光二極 體9 4 0的私流I d也會跟著下降,故需如第丨〇圖與第丨丨圖所 示之自動補償電路。 。月苓看第1 0圖所示,其為根據本發明第三實施例之主 動矩陣有機發光二極體像素電路圖。圖中顯示,、除了第9 匕第-N型薄膜電晶體91〇、第二N型薄膜電晶體92〇、電 合及有機發光二極體940外,更於第9圖中,由有機發 光二極體940與第二N型薄膜電晶體92〇之第二汲極、第二 源形成之電流傳送路徑中,將閘極與汲極連接在一起 之i溥肤電晶體所形成之主動負載1〇 極與電源負端之間。 匕置於弟一源 因=,當有機發光二極體940之跨壓v〇 led上升,而導 致流經有機發光二極體94〇的電流Id下降時,主動負^ 1010之跨壓也會下降,使得 、 獲得補償,因而VT 63 ^ 上升而Vds下降之幅度亦 流Id。 自動補侦流經有機發光二極體940的電 請參看第1 1圖所示,其為根據本發明 :?主動矩陣有機發光二極體像素電路圖。:;10 = 的是’此像素電路係將間極 :-弟10圖不同 電晶體所形成之主動負載及極連接在一起之N型薄膜 -之陰極端與第二以 流傳送路徑上。此種作法可以;0二第二汲極間的電 籍由補^員V d s下降之幅度, 10765twf.ptd 第13頁 1290311 五、發明說明(ίο) 而達到自動補償流經有機發 果。 當然,如熟習此藝者應 負載可以為N型薄膜電晶體 實施例中之主動負載,或配 置於薄膜電晶體源極端,但 負載,其實際之配置當視使 綜上所述,本發明至少 1. 可自動補償流經有機 2. 可改善顯示晝面均勻 雖然本發明已以較佳實 限定本發明,任何熟習此技 和範圍内,當可作各種之更 範圍當視後附之申請專利範 光二極體9 4 0的電流I d之效 知,上述任一實施例中之主動 也可以為P型薄膜電晶體。而 置於薄膜電晶體汲極端,或配 實際上亦可兩端同時配置主動 用者之需求而定。 具有如下之優點: 發光二極體之電流。 度及延長產品壽命。 施例揭露如上,然其並非用以 藝者,在不脫離本發明之精神 動與潤飾,因此本發明之保護 圍所界定者為準。 _Vds = Vd - Vs ^ Vdd ^ rvss ^ v ) Since the threshold of the second N-type thin film transistor 12() is f ed) (1) and the formula (2), and 7 > Knowing the 'voltage value of the type of material line', when organic::,: brightness, to transfer the capital rise, obviously, Vgs and Vds are '^ = two spans: V-diode M0 current Id will also decline. k via organic light emission f Referring to Fig. 2, it is a circuit diagram of a first per-matrix organic light-emitting diode pixel according to the present invention.贝,彳之^The main picture of the first-N-type thin film transistor 1 1 0, the second N-type "film coin not 曰' spear, the first capacity 130 and the organic light-emitting diode 14〇 =1120, electricity The second carrier of the thin film transistor 120 is further in the current transmission path formed by the second 140 type 140; the active negative 形成 formed by the 薄膜-type thin film transistor of the light-emitting diode The pole is connected to the anode end of the diode uo and the second source is loaded with the organic light emitting element. Therefore, when the voltage across the organic light emitting diode 140 flows through the organic light emitting diode 14〇, , ^ r, ^ T „ #Vgs , Vds τ /Λ; 10 i 1: and can automatically compensate the electric Id flowing through the organic light-emitting diode 140. As shown in Fig. 4, where: the two-position load 2 1〇Vs voltage rise curve and 1 (1 line below the dotted line is the j current drop curve on the Vs voltage after the active load 21〇. Obviously, the flow through the rise curve and the (4) flow Id can be compensated The situation is lowered, and the automatic compensation is achieved = first result - the polar body is shown in Fig. 5, which is another 10765 twf according to the first embodiment of the present invention, ptd page 10! 311 V. INSTRUCTIONS (7) ~ Active matrix organic light-emitting two = Yes, this pixel circuit is two; 2::, N-type film connected with the active load 51 formed by different transistors in Figure 2 The % & „ of the N-type thin film transistor 120 is placed at the positive end of the power supply Vdd and the second method can be used to reduce the current of the organic light-emitting diode U〇 on the current transmission path by (4) s. To achieve automatic compensation flow, please refer to Figure 6, i1 salt. Organic light-emitting diode pixel display, the picture shows the active matrix light-emitting diode pixel used in the 22nd embodiment including the .W figure "not" The active matrix organic body 620, the capacitor 63 0 and the organic thin film transistor 610, and the P-type thin film electro-crystalline thin film transistor 6 · 0 of the first pole / 640 ° of the way to receive the N-type material line, the first, the original support, A 1 wood connection known line, the first pole connection 6 20 second door ^ shell 1, f 〒 63 0 first end and P type thin film transistor 63 0 first - second P, P type thin film The second source of the crystal 6 2 0 is connected to the capacitor body 64 ^ ^ ^ power supply positive shirt, the second drain is connected to the organic light emitting diode negative terminal Vss, The cathode end of the 64 〇 diode of the organic light-emitting diode is connected to the ground 1/^, and when the voltage across the organic light-emitting diode 64 is increased, the light-彳/ϋ is calculated by the formula (3). It can be seen that the current Id flowing through the organic hair:: pole body 640 will also decrease, so the automatic compensation circuit as shown in Fig. 7 and Fig. 8 is needed. Right Lt ΐ Fig. 7 'It is based on this The second embodiment of the active rectangular thin two-body pixel of the second embodiment of the present invention shows that, except for the sixth figure, the second day of the body 610, the P-type thin film transistor 62 〇, the capacitor 63 〇 and the organic hair -640, more in Figure 6, by p-type thin film transistor 62 〇 10765twf, pt.d 1290311 "― 丨 "_ 丨. V, invention description (8) two, the first and the extreme Organic light-emitting diode ^ ^ ^ ^ ^ ^ ^ The pole and the bungee are connected to the bottom of the thin body to form the active load 71〇, the classmates ^> 包日日体所. The battle 0 is disposed at the positive end of the power supply Vdd and the second source. Therefore, when the voltage across the organic light-emitting diode 640 rises, the flow rises through the organic light-emitting diode 5 〇iea, and the voltage across the guide also decreases. == When the stream Id drops 'active load 7Π ^ ^ . ί :: 7- FIV; "# ^,J ^ ^ ^ Please refer to Figure 8, V1; - ipH640 current Id. An active matrix organic luminescence II/Chu is that this pixel circuit will be a road map. Different from the brother 7 diagram, the active negative formed by the transistor: i 〇, the p-type film with the poles connected together The plug between the second poles of the crystal 620: f anode end and ? The type of thin film can be reduced by compensating for the Vsd:;,: the dynamic method also illuminates the effect of the current Id of the diode 640. 】Automatic complement "k through the organic eye, see Figure 9, 1 rabbit-organic light-emitting diode pixel diagram 'di two,: the active matrix light-emitting diode pixels used in the example include: tamping?: 'This active matrix The organic thin film transistor 920, the capacitor 93n month female / #胲 transistor 910, the second N-type mode is the first N-type thin film electro-crystal in the machine f-light diode 94〇. It is coupled to a drain connection data line, ^日—之第—The gate is connected to the scanning line, the second N-type thin film is electrically connected to the second pole=接!容... The second pole of the 920 is connected with a brother and a gate, and the second two N-type thin film transistor is connected to the capacitor 93 The cathode end of the second 浐 〇 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 Then, it is connected to the positive terminal Vdd of the power supply. When the voltage across the voltage of the organic light-emitting diode 940 rises, the vds will be IV, and the equation of (1) will be known to cause the flow through the organic light-emitting diode 9 The private stream I d of 40 will also decrease, so the automatic compensation circuit as shown in the figure and the figure is required. 0 is a circuit diagram of an active matrix organic light emitting diode according to a third embodiment of the present invention. The figure shows that, in addition to the 9th 匕 first-N type thin film transistor 91 〇, the second N type thin film The crystal 92 〇, the electric junction and the organic light emitting diode 940 are further formed by the second light source and the second source of the organic light emitting diode 940 and the second N type thin film transistor 92. In the current transmission path, the active load 1 pole formed by the skin transistor connected to the gate and the drain is connected between the anode and the negative terminal of the power supply. When the voltage across the 940 voltage rises and the current Id flowing through the organic light-emitting diode 94 decreases, the voltage across the active negative voltage 1010 also decreases, so that compensation is obtained, so that VT 63 ^ rises and Vds decreases. The amplitude also flows Id. The power of the automatic detection through the organic light-emitting diode 940 is shown in Figure 11, which is a circuit diagram of the active matrix organic light-emitting diode according to the present invention: 10 = Is 'this pixel circuit system will be the pole: - brother 10 picture of the different transistors formed by the initiative The N-type film of the load and the pole are connected together - the cathode end and the second flow path are carried out. This method can be used; the amplitude of the electric charge between the second and the second poles is reduced by the V ds of the supplement, 10765 twf. Ptd Page 13 1290311 V. Inventive Note (ίο) to achieve automatic compensation through the organic hair. Of course, if you are familiar with this art, the load should be the active load in the N-type thin film transistor embodiment, or in the thin film The crystal source is extreme, but the load, its actual configuration, as described above, at least 1. The invention can automatically compensate for the flow through the organic 2. The display can be improved. Although the present invention has been described in terms of preferred embodiments, Any of the above-mentioned embodiments may be P-type active in any of the above-mentioned embodiments, and the current I d of the patent application vane diode 94 can be used in various ways. Thin film transistor. It is placed at the extreme end of the thin-film transistor, or it can be configured with the needs of both active users at the same time. It has the following advantages: The current of the light-emitting diode. Degree and extend product life. The present invention is disclosed above, and it is not intended to be used by those skilled in the art without departing from the spirit and scope of the invention. _
10765t.wf.ptd 第14頁 1290311 圖式簡單說明 第1圖係顯示第一實施例使用之主動矩陣有機發光二 極體像素示意圖; 第2圖係顯示根據本發明第一實施例之主動矩陣有機 發光二極體像素電路圖; 第3圖係顯示根據本發明第一實施例之主動矩陣有機 發光二極體像素電路電壓上升曲線比較圖; 第4圖係顯示根據本發明第一實施例之主動矩陣有機 發光二極體像素電路電流下降曲線比較圖; 第5圖係顯示根據本發明第一實施例之另一種主動矩 陣有機發光二極體像素電路圖; 第6圖係顯示第二實施例使用之主動矩陣有機發光二 極體像素示意圖; 第7圖係顯示根據本發明第二實施例之主動矩陣有機 發光二極體像素電路圖; 第8圖係顯示根據本發明第二實施例之另一種主動矩 陣有機發光二極體像素電路圖; 第9圖係顯示第三實施例使用之主動矩陣有機發光二 極體像素示意圖; 第1 0圖係顯示根據本發明第三實施例之主動矩陣有機 發光二極體像素電路圖;以及 第11圖係顯示根據本發明第三實施例之另一種主動矩 陣有機發光二極體像素電路圖。 圖式標示說明: 1 1 0、9 1 0第一 N型薄膜電晶體10765t.wf.ptd Page 14 1290311 Brief Description of the Drawings Fig. 1 is a schematic diagram showing an active matrix organic light emitting diode used in the first embodiment; Fig. 2 is an active matrix organic according to a first embodiment of the present invention. LED pixel circuit diagram; FIG. 3 is a comparison diagram of voltage rise curves of an active matrix organic light emitting diode circuit according to a first embodiment of the present invention; FIG. 4 is a diagram showing an active matrix according to a first embodiment of the present invention. Comparison diagram of current decreasing curve of organic light emitting diode pixel circuit; Fig. 5 is a circuit diagram of another active matrix organic light emitting diode according to the first embodiment of the present invention; Fig. 6 is a diagram showing active use of the second embodiment Schematic diagram of a matrix organic light emitting diode pixel; FIG. 7 is a circuit diagram of an active matrix organic light emitting diode according to a second embodiment of the present invention; and FIG. 8 is a diagram showing another active matrix organic according to a second embodiment of the present invention. Light-emitting diode pixel circuit diagram; Figure 9 shows the active matrix organic light-emitting diode pixel used in the third embodiment FIG. 10 is a circuit diagram of an active matrix organic light emitting diode according to a third embodiment of the present invention; and FIG. 11 is a diagram showing another active matrix organic light emitting diode according to a third embodiment of the present invention. Circuit diagram. Schematic indication: 1 1 0, 9 1 0 first N-type thin film transistor
10765t.wf.ptd 第15頁 1290311 圖式簡單說明 120 130 140 210 主動負載 92 0 第二N型薄膜電晶體 630 、 930 電容 640、940 有機發光二極體 510 、 710 、 810 、 1010 、 1110 6 1 0 N型薄膜電晶體 6 2 0 P型薄膜電晶體10765t.wf.ptd Page 15 1290311 Schematic description 120 130 140 210 Active load 92 0 Second N-type thin film transistor 630, 930 Capacitance 640, 940 Organic light-emitting diodes 510, 710, 810, 1010, 1110 6 1 0 N-type thin film transistor 6 2 0 P-type thin film transistor
10765t.wf.ptd 第16頁10765t.wf.ptd Page 16
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| TWI413061B (en) * | 2008-08-01 | 2013-10-21 | Univ Nat Cheng Kung | A driving circuit and a pixel circuit having the driving circuit |
| TWI427597B (en) * | 2011-08-11 | 2014-02-21 | Innolux Corp | Display and driving method thereof |
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| JP2011043729A (en) * | 2009-08-24 | 2011-03-03 | Sony Corp | Display device and electronic apparatus |
| TWI682381B (en) * | 2018-10-17 | 2020-01-11 | 友達光電股份有限公司 | Pixel circuit, display device and pixel circuit driving method |
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| TWI413061B (en) * | 2008-08-01 | 2013-10-21 | Univ Nat Cheng Kung | A driving circuit and a pixel circuit having the driving circuit |
| TWI427597B (en) * | 2011-08-11 | 2014-02-21 | Innolux Corp | Display and driving method thereof |
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