[go: up one dir, main page]

TWI288978B - Manufacturing method of electronic light emitting device - Google Patents

Manufacturing method of electronic light emitting device Download PDF

Info

Publication number
TWI288978B
TWI288978B TW92100268A TW92100268A TWI288978B TW I288978 B TWI288978 B TW I288978B TW 92100268 A TW92100268 A TW 92100268A TW 92100268 A TW92100268 A TW 92100268A TW I288978 B TWI288978 B TW I288978B
Authority
TW
Taiwan
Prior art keywords
substrate
layer
light
conductive
emitting
Prior art date
Application number
TW92100268A
Other languages
Chinese (zh)
Other versions
TW200414555A (en
Inventor
Robert Yeh
Yu-Sheng Lin
Original Assignee
Everlight Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to TW92100268A priority Critical patent/TWI288978B/en
Publication of TW200414555A publication Critical patent/TW200414555A/en
Application granted granted Critical
Publication of TWI288978B publication Critical patent/TWI288978B/en

Links

Landscapes

  • Led Device Packages (AREA)

Abstract

There is provided a manufacturing method of electronic light emitting device, which includes: forming plural through holes in a substrate; forming a copper covering layer on the surface of the substrate; forming a silver covering layer on the copper covering layer; removing the copper covering layer and silver covering layer on a predefined surface area of the substrate, so as to form a conductive metal laminate with a predefined pattern on the surface of the substrate; attaching plural light emitting diode dies on the surface of the metal laminate; using a metal wire to electrically connect each light emitting diode die to the conductive metal laminate; using encapsulating material to package the light emitting diode dies and the metal wires on the substrate; and dicing the substrate to form plural light emitting devices.

Description

1288978 五、發明說明(i) 發明所屬之技術領域 方 造 製 之 \^y ο 6 C法 • 1—I V方 6 d 造 (製 件之 器件 光器 ,月 子極 電二 種光 _ 發 於種 關一 係於 月 aw rrr'-v 發其 本尤 法 先前技術 發光二極體器件之應用頗為廣泛,例如,可應用於光 學顯示裝置、交通號誌、資料儲存裝置、通訊裝置、照明 裝置、以及醫療裝置。如何以經濟有效且符合現代環保要 求之方式提升發光二極體之亮度,是研發人員所關心之一 重要課題。 目前最常見的一種發光二極體器件之製造方法包含下 列各步驟:.1 .準備一片由玻璃環氧樹脂(G 1 a s s Ε ρ ο X y) 或類似材質製成的基板、2 .依預定圖案(p a. 11 e r η),在 該基板中形成複數個貫穿孔、3 .在該基板之表面(含該等 複數個貫穿孔之内表面)上形成銅覆蓋層、4.將該基板之 — 〜 表面形成鎳覆蓋層、5.將該基板之表面形成盒_覆蓋層、6 . 一'''''一 以曝光顯影技術,除去該基板表面預定區域上之各金屬覆 蓋層,因而在基板表面形成具有預定圖案之一導電金屬疊 層、7.將複數個發光二極體晶粒於相應之複數個預定位 置,分別依附於該導電金屬疊層之鑛金表面上、8.在每一 發光二極體晶粒與該導電金屬疊層間,以一金屬線建立適 當之電連接、9.以適當之封裝材料(例如環氧樹脂)將每 一發光二極體晶粒與相關之金屬線封裝於基板上、1 1.切 割該基板,以形成複數個發光二極體器件。1288978 V. INSTRUCTIONS (i) The technical field of the invention belongs to the \^y ο 6 C method • 1 - IV side 6 d (the device optoelectronics of the workpiece, the two kinds of light of the moon) The application of the ancestors in the month aw rrr'-v has been widely used in the prior art luminescent diode devices, for example, it can be applied to optical display devices, traffic signs, data storage devices, communication devices, lighting. Devices and medical devices. How to improve the brightness of light-emitting diodes in a cost-effective and modern environmental protection manner is an important issue for researchers. The most common method for manufacturing light-emitting diode devices includes the following. Each step: 1. Preparing a substrate made of glass epoxy resin (G 1 ass Ε ρ ο X y) or the like, 2. Forming a predetermined pattern (p a. 11 er η) in the substrate a plurality of through holes, 3. a copper coating layer is formed on the surface of the substrate (including the inner surface of the plurality of through holes), 4. a nickel coating layer is formed on the surface of the substrate, and the substrate is formed. Surface forming box_covered a cover layer, a '''''''''''''''''''''''''''''' The light-emitting diode crystal grains are respectively attached to the surface of the gold-plated metal of the conductive metal layer at a plurality of predetermined positions, and a metal wire is disposed between each of the light-emitting diode grains and the conductive metal layer. Establishing appropriate electrical connections, 9. encapsulating each of the light-emitting diode dies and associated metal lines on the substrate with a suitable encapsulating material (eg, epoxy), 1 1. cutting the substrate to form a plurality of luminescent layers Diode device.

第4頁 1288978 五、發明說明(2) 該先前技藝發光二極體器件之製造方法所製成的發光 二極體器件,有多項缺點:1.鍍金表面對於短波長光線 (如藍光)之反射率偏低,例如對藍光之反射率僅約 4 0%,因而無法有效反射短波長發光二極體晶粒所發射之 光線、2.在一般印刷電路板所使用之銅箔基版上鍍金之 前,為避免金與銅之、間產生遷移(m i g r a t i ο η)現象,須 先在銅箔表面鍍上一層鎳,作為阻隔層,導致偏高之製造 成本、3.鎳係一種有害健康物質(請參閱中華民國九十 一年八月三十曰行政院環境保護署環署水字第0九一 0 0 五九九0 —號公告)、4.以及金之材料成本偏高。 · 本案發明人長期構思如何能夠兼顧環保且經濟有效地 提升發光二極體器件之亮度,熟習本技藝者皆以為··於製 造發光二極體之程序中,在銅扳一表面-鍍-銀,其.所鍍^ ,故不可行。但本案發明人,以逆向思考方 法,在大家皆曰不可行之概念上思考,並經實u登實二於 一—......... …’ 製造發光二極體之程序中’在印刷電路板預定表面區域鑛 對於短波長光線有較高反射率之銀(其例如對於藍光之反 射率約為9 7 %),以取代該先前技藝之鍍金,竟然电 料之為地,能夠避免先前技藝之前述各項缺點’而達致_能 夠兼顧環保且經濟有效地提升發光二極體器件亮度之進步遽, 功效。 發明内容 本發明之一目的在於提供一種電子發光器件之製造方Page 4 1288978 V. DESCRIPTION OF THE INVENTION (2) The light-emitting diode device fabricated by the prior art method for fabricating a light-emitting diode device has several disadvantages: 1. Reflection of a gold-plated surface for short-wavelength light (such as blue light) The rate is low, for example, the reflectance of blue light is only about 40%, so that the light emitted by the short-wavelength light-emitting diode crystal grains cannot be effectively reflected, 2. Before the gold-plated copper plate used in general printed circuit boards is plated with gold In order to avoid the phenomenon of migration between gold and copper, it is necessary to first coat a layer of nickel on the surface of the copper foil as a barrier layer, resulting in a high manufacturing cost and 3. Nickel is a harmful health substance (please Refer to the Announcement of the Water Quality Department of the Environmental Protection Department of the Executive Yuan, August 30, 2011, and the material cost of gold. · The inventor of the present invention has long conceived how to balance the environmental protection and cost-effectively improve the brightness of the light-emitting diode device. Those skilled in the art believe that in the process of manufacturing the light-emitting diode, in the copper plate-surface-plating-silver , it is plated ^, it is not feasible. However, the inventor of this case, in the way of reverse thinking, thinks on the concept that everyone is not feasible, and through the real thing, it is in the process of manufacturing a light-emitting diode. 'In the predetermined surface area of the printed circuit board, the silver has a higher reflectivity for short-wavelength light (for example, the reflectance of blue light is about 97%), instead of the gold plating of the prior art, even the electric material is ground, It is possible to avoid the aforementioned shortcomings of the prior art and achieve the advantages and advantages of environmentally friendly and cost-effectively improving the brightness of the light-emitting diode device. SUMMARY OF THE INVENTION An object of the present invention is to provide a manufacturer of an electronic light emitting device

第5頁 1288978 五、發明說明(3) 法,以此方法所製造之發光二極體器件,能夠產生較高之 亮度。 本發明之另一目的在於提供一種電子發光器件之製造 方法,其製造程序較簡單,因而能夠降低製造成本。 本發明之又一目的在於提供一種電子發光器件之製造 方法,其中使用價格較低廉之電鍍反射金屬材料,因而能 夠降低材料成本。 本發明之又另一目的在於提供一種電子發光器件之製 造方法,其中免用先前技藝所使用之一種有害健康物質-鎳,因而能夠符合現代之環保要求。 # 為達成上述各目的,依本發明一較佳實施例之一種電 子發光器件之製造方法,.包含下列各步驟:依一預定圖 案,在一基板中形成複數個貫穿孔;在該基板之表面(含 該等複數個貫穿孔之内表面)形成一銅覆蓋層;在該銅覆 蓋層上形成一銀覆蓋層;以曝光顯影技術,除去該基板表 面預定區域上之該銅覆蓋層與該銀覆蓋層,因而在該基板 表面形成具有預定圖案之一導電金屬疊層;將複數個發光 二極體晶粒於相應之複數個預定位置,分別依附於該導電 金屬疊層之表面上;在該等複數個發光二極體晶粒中之每 一發光二極體晶粒與該導電金屬疊層間,以一金屬線建立 適當之電連接;以一封裝材料,將該發光二極體晶粒與該 金屬線封裝於該基板上;以及切割該基板,以形成複數個 發光二極體器件。Page 5 1288978 V. Description of Invention (3) The light-emitting diode device manufactured by this method can produce higher brightness. Another object of the present invention is to provide a method of manufacturing an electron-emitting device which is simple in manufacturing process and thus can reduce manufacturing costs. It is still another object of the present invention to provide a method of manufacturing an electroluminescent device in which a relatively inexpensive electroplated reflective metal material is used, thereby reducing material cost. Still another object of the present invention is to provide a method of manufacturing an electroluminescent device in which a harmful health substance, nickel, which is used in the prior art, is dispensed with, thereby being able to meet modern environmental requirements. In order to achieve the above objects, a method for fabricating an electronic light-emitting device according to a preferred embodiment of the present invention comprises the steps of: forming a plurality of through holes in a substrate according to a predetermined pattern; on the surface of the substrate Forming a copper cap layer on the copper cap layer; forming a silver cap layer on the copper cap layer; removing the copper cap layer on the predetermined surface of the substrate surface and the silver by exposure and development techniques a cover layer, thereby forming a conductive metal stack having a predetermined pattern on the surface of the substrate; and dicing the plurality of light-emitting diodes on the surface of the conductive metal laminate respectively at a plurality of predetermined positions; A suitable electrical connection is established between each of the plurality of light-emitting diode crystal grains and the conductive metal layer by a metal wire; and the light-emitting diode die is formed by a packaging material The metal line is packaged on the substrate; and the substrate is diced to form a plurality of light emitting diode devices.

第6頁 1288978 五、發明說明(4) 實施方式 茲參照附圖,詳細說明本發明如後。Page 6 1288978 V. DESCRIPTION OF THE INVENTION (4) Embodiments The present invention will be described in detail with reference to the accompanying drawings.

依本發明一較佳實施例之一電子發光器件之製造方法 包含下列各步驟:1 .準備一片基板、2.依預定圖案 (p a 11 e r η),在該基板中形成複數個貫穿孔、3 .將該基 板之表面上形成一銅覆蓋層,使該等複數個貫穿孔之内表 面皆覆蓋一層銅材料、4 .將該基板之表面I度銀、5 .以曝光 顯影技術,除去基板表面預定區域上之金屬,因而在該基 板表面形成具有預定圖案之一導電金屬疊層、6.將複數個 發光二極體晶粒於相應之複數個預定位置,分別依附於該 導電金屬疊層之鍍銀表面上、7 .在每一發光二極體晶粒與 該導電金屬疊層間,以一金屬線建立適當之電連接、8 ·以 適當之封裝材料(例如環氧樹脂)將每一發光二極體晶粒 與相關之金屬線封裝於該基板上、9 .切割該基板,以形成 複數個發光二極體器件。 熟習本技藝者應可瞭解,在以上任何相鄰之二步驟 間,可加入適當之其他一步驟或多步驟。依本發明一較佳 實施例之製造方法,於完成前述步驟6後之基板11,顯示 於圖1 ,包含複數個貫穿孔2 0、複數個導電區3 0,其中每A method of manufacturing an electronic light-emitting device according to a preferred embodiment of the present invention comprises the following steps: 1. preparing a substrate, 2. forming a plurality of through holes in the substrate according to a predetermined pattern (pa 11 er η), Forming a copper coating on the surface of the substrate, so that the inner surfaces of the plurality of through holes are covered with a layer of copper material, 4. The surface of the substrate is silvered at a degree of 1. 5, by exposure and development techniques, the surface of the substrate is removed. a metal on the predetermined area, thereby forming a conductive metal stack having a predetermined pattern on the surface of the substrate, 6. Having a plurality of light-emitting diode dies in a corresponding plurality of predetermined positions, respectively attached to the conductive metal stack On the silver-plated surface, between each of the light-emitting diode dies and the conductive metal stack, a suitable electrical connection is established by a metal wire, and each illuminating is performed with a suitable encapsulating material (such as an epoxy resin). A diode die and associated metal lines are packaged on the substrate, and the substrate is diced to form a plurality of light emitting diode devices. Those skilled in the art will appreciate that any other step or steps may be added between any two adjacent steps above. According to a manufacturing method of a preferred embodiment of the present invention, the substrate 11 after the completion of the foregoing step 6 is shown in FIG. 1 and includes a plurality of through holes 20 and a plurality of conductive regions 30, each of which

一導電區3 0於完成前述步驟9後,.形成複數個導電區1 2與 複數個導電區1 3,如圖2中所示。 請參閱圖2,依本發明之前述製造方法所製成之一發 光二極體器件1例如包含一基板1 1、二導電區1 2與1 3、一 發光二極體晶粒1 4、一金屬線1 5 (例如由金製成)、及一After completing the foregoing step 9, a conductive region 30 forms a plurality of conductive regions 12 and a plurality of conductive regions 13 as shown in FIG. Referring to FIG. 2, a light-emitting diode device 1 manufactured by the above manufacturing method of the present invention includes, for example, a substrate 1 1 , two conductive regions 12 and 13 , and a light-emitting diode die 14 . Metal wire 15 (for example made of gold), and one

1288978 五、發明說明(5) ’ 封裝材料1 6,其中基板1 1例如為用以製造印刷電路板之一 般玻璃環氧樹脂基板,導電區1 2與1 3_為在基板1 1之二預定 —一 _______________________-一________—一一1288978 V. INSTRUCTION DESCRIPTION (5) 'Packaging material 1 6, wherein the substrate 1 1 is, for example, a general glass epoxy substrate for manufacturing a printed circuit board, and the conductive regions 12 and 1 3 are predetermined on the substrate 1 1 - one _______________________ - one ________ - one by one

CH 表面區域上依前述方法形成一銅覆蓋層及一銀覆..蓋..層所構 、成’發光二極體晶粒1 4之陰極以電連接方式依附於導電區 1 2上,金屬線1 5使導電區1 3電連接於發光二極體晶粒1. 4之 陽極。封裝材料1 6,例如由耐高溫之矽膠或環氧樹脂形 成,將發光二極體晶粒1 4與金屬線1 5封裝於導電區1 2與1 3 以及基板1 1上。被封裝材料1 6封住之導電區1 2與1 3的鍍銀 表面,因一與空氣“隔一暴」—故—無氧.化-變·黑之…時-1§一。 經實驗證實,依本發明之發光二極體器件1所產生之 亮度約為前述先前技藝藍色發光二極體器件所產生亮度之 1 4 0%,亦即能夠達成亮度提升約4 0%之增進功效。 此夕卜,由於基板1 1之銅材料與其上所鍍之銀牲王j生 ,一-----------------------------------...............一〜一 遷移現象,故可直接在基板1 1之銅材料上鑛銀,而無須如 前述先前技藝發光二極體器件要求先鍍一層鎳作為防止該 遷移現象之阻隔層,因而依本發明之發光二極體器件1能 夠達致簡化生產程序及兼顧現代環保要求之優點。 0 以上所述者,僅為用以方便說明本發明之一較佳實施 例,本發明之範圍不限於該較佳實施例,凡依本發明所做 的任何變更,皆屬本發明申請專利之範圍。例如,以銀合 金取代銀,做為導電區1 2與1 3表面之反射材料,顯然不脫 離本發明之精神與範圍。On the surface of the CH, a copper coating layer and a silver coating are formed according to the above method. The cathode is formed, and the cathode of the LED diode 14 is electrically connected to the conductive region 12, metal. The anode of the light-emitting diode die 1.4 is electrically connected to the anode of the light-emitting diode. The encapsulating material 166 is formed, for example, of a high temperature resistant silicone or epoxy resin, and the luminescent diode die 14 and the metal line 15 are encapsulated on the conductive regions 12 and 13 and the substrate 11. The silver-plated surface of the conductive regions 1 2 and 1 3 sealed by the encapsulating material 16 is "one violent" from the air - therefore - anaerobic, chemical-transformed, black, and the like -1. It has been experimentally confirmed that the brightness of the light-emitting diode device 1 according to the present invention is about 140% of the brightness produced by the prior art blue light-emitting diode device, that is, the brightness can be increased by about 40%. Improve efficacy. In addition, since the copper material of the substrate 1 1 and the silver plated on it are born, one --------------------------- --------............... One to one migration phenomenon, so it can be directly on the copper material of the substrate 1 1 without silver, without the prior art The diode device requires a layer of nickel to be used as a barrier layer to prevent the migration phenomenon, so that the light-emitting diode device 1 according to the present invention can achieve the advantages of simplifying the production process and taking into consideration modern environmental protection requirements. The above is only a preferred embodiment for facilitating the description of the present invention, and the scope of the present invention is not limited to the preferred embodiment, and any changes made in accordance with the present invention are claimed in the present invention. range. For example, the replacement of silver with a silver alloy as a reflective material for the surfaces of the conductive regions 12 and 13 does not clearly depart from the spirit and scope of the present invention.

12889781288978

Claims (1)

1288978 六、申請專利範圍 1 . 一種電子發光器件之製造方法,包含下列各步驟: 依一第一預定圖案,在一基板中形成複數個貫穿孔; 在該基板之表面(含該等複數個貫穿孔之内表面)上形 成由一 在該 導電層 依一 與該第 將複 依附於 在該 二導電 將該 切割 其中 射率高 \依申 法,其 )·依申 法,其 象。 4.依申 法,其 κ依申 基板之表面 第一導電材 第一導電層 第二預 二導電 數個電 該第二 等複數 層間,. 電子發 該基板 該第二 於 7 0 %。 請專利 中該第 定圖 層; 子發 導電 個電 建立 光單,以 導電 料構成之一第一導電層; 上形成由一第二導電材料構成之一第二 案,除去該基板表面上之該第一導電層 光單元於相應之複數個預定位置,分別 層上 ; 子發光單元中每一電子發光單元與該第 適當之電連接; 元與該金屬線封裝於該基板上;以及 形成複數個電子發光二極體器件, 層對於該電子發光單元所發射光線之反 範圍第1項之一種電子發光器件之製造方 二導電材料包含銀。 請專利範圍第1項之一種電子發光器件之製造方 中該第一導電層與該第二導電層間不產生遷移現 請專利範圍 中該電子發 請專利範圍 第1項之一種電子發光器件之製造方 光單元係一種發光二極體晶粒。 第1項之一種電子發光器件之製造方1288978 6. Patent application scope 1. A method for manufacturing an electronic light-emitting device, comprising the steps of: forming a plurality of through holes in a substrate according to a first predetermined pattern; on a surface of the substrate (including the plurality of through-the-holes) The inner surface of the hole is formed by a layer in the conductive layer and the second layer is attached to the second conductive portion in the second portion of the conductive portion. 4. According to the application method, the surface of the κ 依 申 substrate is the first conductive material, the first conductive layer, the second pre-conducting current, the second, the second plurality of layers, and the electron emitting the substrate, the second at 70%. The third layer of the conductive layer is formed by a conductive material, and the first conductive layer is formed of a conductive material; and a second case formed of a second conductive material is formed thereon, and the surface of the substrate is removed. The first conductive layer light unit is respectively disposed on the respective plurality of predetermined positions; each of the sub-light emitting units is electrically connected to the first appropriate; the metal and the metal line are packaged on the substrate; and a plurality of An electron-emitting diode device, the layer of which is opposite to the light emitted by the electron-emitting unit. The second conductive material of the electron-emitting device comprises silver. In the manufacturing method of an electronic light-emitting device of the first aspect of the patent, there is no migration between the first conductive layer and the second conductive layer, and the manufacture of an electronic light-emitting device of the first application of the electronic patent application scope is disclosed in the patent scope. The square light unit is a light-emitting diode crystal. The manufacturer of an electronic light-emitting device of item 1 第10頁 1288978 六、申請專利範圍 法,其中該第 導電層對於該電子發光單元所發射光線之 反射率高於9 0 % ◦ 6 . —種電子發光器件之製造方法 依一預定圖案,在 包含下列各步驟: 基板中形成複數個貫穿孔; 在該基板之表面(含該等複數個貫穿孔之内表面)形成 銅覆盖層 在 以 蓋層 案之 將 別依 在 與該 以 該基 切 該銅覆 曝光顯 與該銀 一導電 複數個 附於該 該等複 導電金 一封裝 板上; 割該基 蓋層 影技 覆蓋 金屬 發光 導電 數個 屬疊 材料 以及 板, 上形 術, 層, 疊層 二極 金屬 發光 層間 ,將 成一銀覆蓋層 除去該基板表 因而在該基板 面預定區域上之該銅覆 表面形成具有一預定圖 體晶粒於相應之複數個預定位置,分 疊層之表面上; 二極體晶粒中之每一發光二極體晶粒 ,以一金屬線建立適當之電連接; 該發光二極體晶粒與該金屬線封裳於 以形成複數個發光二極體器件Page 10 1288978 6. The patent application scope method, wherein the first conductive layer has a reflectance higher than 90% for the light emitted by the electronic light-emitting unit. The manufacturing method of the electronic light-emitting device according to a predetermined pattern includes The following steps are: forming a plurality of through holes in the substrate; forming a copper cover layer on the surface of the substrate (including the inner surface of the plurality of through holes), in the case of the cap layer, a copper-clad exposure display is attached to the plurality of conductive conductive gold-on-package plates; the base cover layer is covered with a metal-emitting conductive conductive material and a plate, a topography, a layer, and a stack Between the layer of the two-layer metal light-emitting layer, the silver-clad layer is removed to remove the substrate surface, and the copper-clad surface on the predetermined area of the substrate surface is formed to have a predetermined pattern of crystal grains at a plurality of predetermined positions, and the surface is laminated. Each of the light-emitting diode grains in the diode grains establishes an appropriate electrical connection by a metal line; the light-emitting diode crystal grains and the metal The wire is sealed to form a plurality of light emitting diode devices
TW92100268A 2003-01-28 2003-01-28 Manufacturing method of electronic light emitting device TWI288978B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92100268A TWI288978B (en) 2003-01-28 2003-01-28 Manufacturing method of electronic light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92100268A TWI288978B (en) 2003-01-28 2003-01-28 Manufacturing method of electronic light emitting device

Publications (2)

Publication Number Publication Date
TW200414555A TW200414555A (en) 2004-08-01
TWI288978B true TWI288978B (en) 2007-10-21

Family

ID=39228508

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92100268A TWI288978B (en) 2003-01-28 2003-01-28 Manufacturing method of electronic light emitting device

Country Status (1)

Country Link
TW (1) TWI288978B (en)

Also Published As

Publication number Publication date
TW200414555A (en) 2004-08-01

Similar Documents

Publication Publication Date Title
US8067777B2 (en) Light emitting diode package assembly
EP2897182A1 (en) Light emitting device and lighting system having the same
KR101255121B1 (en) Lighting emitting diode package and Method for manufacturing the same
WO2006028073A1 (en) Chip component type light emitting device and wiring board for the same
US20130200400A1 (en) Pcb having individual reflective structure and method for manufacturing light emitting diode package using the same
US20110101392A1 (en) Package substrate for optical element and method of manufacturing the same
WO2007126074A1 (en) Semiconductor light emitting module, device, and its manufacturing method
TW201218338A (en) Package board and manufacturing method thereof
WO2013121708A1 (en) Light emitting apparatus and method for manufacturing same
JP2012124248A (en) Lead frame substrate for mounting led chip, method for manufacturing the same and led package
KR101051488B1 (en) Method for manufacturing light emitting diode unit, and light emitting diode unit manufactured by this method
US10680140B2 (en) Light-emitting device and manufacturing method thereof
TWI472067B (en) Optical package and method of manufacturing same
KR101719692B1 (en) Printed Circuit Board, Manufacturing method thereof, LED module and LED lamp with using the same
CN116799108A (en) A manufacturing method of LED lamp beads and LED lamp beads
TW201037803A (en) Multi-layer packaging substrate, method for making the packaging substrate, and package structure of light-emitting semiconductor
TWI288978B (en) Manufacturing method of electronic light emitting device
KR101129002B1 (en) Optical package and manufacturing method of the same
KR20130015480A (en) Lighting emitting diode package and method for manufacturing the same
TW201119099A (en) Light-emitting diode and method for manufacturing thereof
KR20100100229A (en) Light emitting diode package and manufacturing method for the same
JP2009194112A (en) LED module substrate, manufacturing method thereof, and LED module using the LED module substrate
KR101146656B1 (en) Optical package and manufacturing method of the same
KR101128991B1 (en) Side view optical package and manufacturing method of the same
KR101146659B1 (en) Optical package and manufacturing method of the same