TWI286776B - Inspecting device using electron beam and method for making semiconductor devices with such inspection device - Google Patents

Abstract

An inspection apparatus using electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.

Description

1286776 A7 _ B7 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Field of the Invention The present invention relates to an inspection apparatus for inspecting a pattern defect or the like formed on a surface of an inspection object using an electron beam, and more particularly, to irradiate an electron to an inspection object. The beam is then captured with the surface state to capture the changed secondary electrons and form image data, and then the pattern formed on the surface of the inspection object is inspected by high throughput according to the image data to detect the semiconductor process. A wafer defect inspection apparatus, and a device manufacturing method for manufacturing a high yield device using the inspection apparatus. The specific rain is related to an inspection apparatus α using a map projection method using a face beam and a device manufacturing method using the same. In terms of semiconductor manufacturing, its design rule has reached the era of 100 nm. In terms of production type, it has also been transformed from a large-scale production represented by DRAM to a variety of products such as SOC (Silicon on chip). A small amount of production. Therefore, it is necessary to increase the number of processes and increase the yield of each process, so that the defect inspection in the process is more important. The present invention relates to an apparatus for inspecting a wafer after each process in a semiconductor process, and a method and apparatus for inspecting an electron beam, or a device manufacturing method using the same. The problem of the conventional technology and the invention to be solved With the high integration of semiconductor devices and the miniaturization of patterns, inspection equipments with high decomposition energy and high throughput are required. In order to inspect the defects of the wafer substrate of the 1 〇〇nm design rule, it is necessary to have a decomposition energy of 100 nm or less, and as the process of high integration of the device increases, the inspection amount also increases relatively. Therefore, high throughput must be required. In addition, with the increase in the number of layers of equipment (please read the precautions on the back and then fill out this page) ---------------- # 经济部Intelligent Property Bureau Staff Consumer Cooperatives Print this paper scale applies China National Standard (CNS) A4 Specification (210 X 297 mm) 1 113757 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 B7 V. Invention Description (2) Plus' requires inspection equipment must be detectable for connection The function of contact failure (electrical defect) of the through-layer of the interlayer wiring. At present, optical defect inspection equipment is mainly used. In terms of decomposition energy and contact failure inspection, it is expected that the optical defect inspection equipment will be replaced by the defect inspection equipment using electron beams, and it will become the mainstream of inspection equipment. However, the electron beam type defect inspection apparatus also has its drawbacks, that is, it is inferior to the optical inspection apparatus in terms of throughput. Therefore, it is required to develop an inspection device with high decomposition energy, high throughput, and monthly b enough to detect electrical defects. The optical decomposition energy is generally limited to 1/2 of the wavelength of light used, and in the case of practical visible light, it is about 0·2 μπι. On the other hand, in the method of using an electron beam, a general scanning type electron beam method (SEM method) is put into practical use, and the decomposition energy is μ1 μm, and the inspection time is 8 hours/piece (2 〇cm wafer). In addition, the biggest feature of the electron beam method is to check for electrical defects (wire breakage, poor conduction, poor penetration, etc.). However, due to the relatively slow inspection speed, it is desirable to develop a defect inspection device with a high speed inspection speed. General § ' inspection equipment is expensive and has a lower throughput than other process equipment, so it is currently used after important processes such as etching, film formation, or CMP (chemical mechanical polishing) flattening. The following describes an inspection apparatus using an electron beam scanning (SEM) method. The SEM inspection apparatus reduces the electron beam (this electron diameter corresponds to the decomposition energy), scans the sample, and irradiates the sample in a line shape. On the other hand, the stage is moved in the direction of the electron beam scanning, whereby the planar observation area can be irradiated with an electron beam. The scanning range of the electron beam is generally — — — — — — — — — I — · 1111111 ^ <Please read the notes on the back and fill out this page.)

H ϋ «1 I el n ϋ I » This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 2 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative print 312767 A7 V. Invention description (3 ) Number 100μπι. Detection of the reduced electron beam (also referred to as a primary electron beam) by a detector (scintillator, photomultiplier (photomultiplier) or semiconductor detector (ρίΝ diode type)) Secondary electrons of the sample produced by irradiation. The coordinates of the irradiation position are combined with the secondary electron quantity (signal intensity) to be imaged, recorded in a billion-dollar device, or the image is taken out to a CRT (cathode ray tube). The principle of the above SEM (Scanning Electron Microscope) is to detect the defects of the process semiconductor semiconductor (generally Si) wafer from the image obtained by this method. The inspection speed (equivalent to the throughput) depends on the amount of the primary electron beam (current value, beam diameter and detector response speed. Beam diameter 0·1μιη (can be regarded as the same as the decomposition energy), current value l〇〇Na, detector The response speed is 100 目前, which is the highest value. The inspection speed is a 20-cm wafer/about 8 hours. The inspection speed is extremely slow (1/20 or less) compared to the light type. The problem (disadvantages) is also present. In addition, a device using a scanning electron microscope (SEM) is commercially available on the market for the inspection and lending related to the present invention, which is performed with a very small scanning amplitude. The reduced electron beam is scanned and the secondary electrons released from the inspection object are scanned with the secondary electron detector' and then formed twice with the same image of the wafer and the SEM image. In addition, in the conventional technology, there is not yet a complete system of defect inspection equipment for applying electronic wires. However, 'application of SEM defect inspection equipment Longer inspection time is required. In addition, the increase in beam current for high throughput will be subject to the Chinese National Standard (CNS) A4 specification (210 X 297 public) due to the empty paper size. — — — — — — — — — · I I----I Book·------- (Please read the notes on the back and fill out this page) 1286776 Ministry of Economic Affairs Intellectual Property Bureau employees cooperation cooperation printing A7 B7 V. (4) The effect of the inter-potential causes the beam to be blurred, and the wafer on the surface of the insulator cannot be charged to obtain a good SEM image. The electro-optical device that considers the illumination of the electron beam for inspection, and the object to be inspected in the clean state The overall construction of the inspection apparatus supplied to the illumination position of the electro-optical apparatus for the correlation between other subsystems for alignment has not yet been clarified. With the large-volume control of the wafer to be inspected, the subsystem It is also required to be able to correspond to it. Therefore, one of the problems to be solved by the present invention is to provide an inspection apparatus that uses an electron optical system using an electron beam. Coordination between the electro-optical system and other constituent machines constituting the inspection apparatus, and increasing the throughput. Another object to be solved by the present invention is to provide an inspection apparatus that can store and correlate the inventory of the inspection object. In the electro-optical system, between the stage devices that position the inspection object, the loader for transporting the inspection object and related equipment are improved to effectively and accurately inspect the inspection object. An object of the present invention is to provide an inspection apparatus which can solve the charging problem occurring in the SEM to accurately inspect an inspection object. Another problem to be solved by the present invention is to perform inspection of a wafer or the like by using the inspection apparatus described above. Inspection to provide a high yield device manufacturing method. ---I--------Install----I---订--------- (Please read the note on the back and then fill out this page) In addition, 'Before' with the semiconductor High density and high integration, high sensitivity inspection equipment for semiconductor wafer fabrication in semiconductor wafer manufacturing

1286776 Employees' Cooperatives Cooperatives A7 V. Inventions (5) Defect inspections such as cases are becoming more and more important. On the inspection apparatus for inspecting the defect, an electron microscope described in Japanese Patent Laid-Open No. Hei 2-142-45 or Japanese Patent Laid-Open No. Hei No. 5-258703 is used. For example, an electron microscope disclosed in Japanese Patent Laid-Open No. 2_142〇45 uses an objective lens to concentrate an electron beam from an electron to irradiate a sample, and detects a secondary electron emitted from the sample by a secondary electron detector. In this electron microscope, a negative voltage is applied to the sample, and a ΕχΒ-type filter in which an electric field and a magnetic field are orthogonal to each other is disposed between the sample and the secondary electron detector. According to the above configuration, the electron microscope applies a negative voltage to the sample to decelerate the electrons irradiated on the sample to become high decomposition energy. In addition, by applying a negative voltage to the sample, the secondary electrons emitted from the sample are accelerated, and the secondary electrons are accelerated by the ExB type filter, so that the accelerated secondary electrons are biased to the direction of the secondary electron detection H. The detector can effectively detect secondary electrons. In the apparatus using the above-described conventional electron microscope, the electron beam from the electron grab is accelerated and energized before the sample is irradiated by a lens system such as an objective lens to which a high voltage is applied. Further, by applying a negative voltage to the sample, the electrons irradiated on the sample are reduced in speed and become high decomposition energy. However, applying a high voltage to the objective lens and applying a negative voltage to the sample may cause a discharge between the objective lens and the sample. Further, in the conventional electron microscope, even if the negative electrode is not applied to the sample, as long as the potential difference between the objective lens and the sample is too large, discharge may occur between the objective lens and the sample. In addition, 'in order to correspond to the discharge of the sample', if the electric I paper size applied to the objective lens is applied to the Chinese National Standard (CNS) A4 specification (21G X 297 public hair T12767 - Ι — — — — — — — — — — I — ·1111111! - (Please read the note on the back and fill out this page) 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention description (6) If the pressure is reduced, the energy cannot be fully transmitted to the electron, resulting in Further, the sample is a semiconductor wafer having a through-substrate on the surface of the semiconductor wafer, that is, the upper layer wiring and the lower layer wiring of the semiconductor wafer are electrically connected to each other, and are substantially perpendicular to the upper and lower wiring surfaces. There is a wiring pattern in the direction. The semiconductor wafer with the through-hole is inspected by a conventional electron microscope, and the same as the description, a high voltage such as 丨〇kv is applied to the objective lens. In addition, the semiconductor crystal here A circular grounding wafer, whereby an electric field is formed between the semiconductor wafer and the objective lens. In this state of dispersion, especially on the surface of the semiconductor wafer. An electric field is concentrated in the vicinity of the body to form a high electric field. When the electron beam is irradiated to the through body, the through body releases a large amount of secondary electrons, and these secondary electrons are accelerated by a high electric field in the vicinity of the through-body. Accelerated secondary electrons It has a considerable energy (>3eV) 'Ionizes the residual gas generated when the electron beam is irradiated on the semiconductor wafer. Thus 'the secondary electrons ionize the residual gas to produce ionized charged particles. The ionized charged The positive ions of the particles are accelerated in the direction of the through-body by the high electric field in the vicinity of the through-body, and collide with the through-body, and the secondary electrons are again released by the through-body. With a series of positive feed back, finally A discharge is generated between the objective lens and the semiconductor wafer, and the pattern of the semiconductor wafer is damaged by the discharge. Therefore, another object to be solved by the present invention is to provide an electronic smash that can prevent discharge of the sample to be inspected. Device, and device manufacturing method using the same. The paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ) 6 312767 ---------- Install -------_丨--------- (Please read the phonetic on the back? Please fill out this page) 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 ---------B7___________ V. Description of invention (7) In addition, 'the above-mentioned conventional mask design for semiconductor device manufacturing, or formed on a semiconductor wafer The defect inspection of the pattern is performed by the following method: When the surface of the sample is irradiated with a single electron beam, the secondary electrons emitted from the sample are detected to obtain a pattern image of the sample, and the image is compared with the reference image. In the defect inspection apparatus, a Εχβ separator for separating primary electrons and secondary electrons is provided. Fig. 52 is a view showing an outline of an example of a map projection type electron beam inspection apparatus having a ΕχΒ separator. The electron beam released by the electron grab 72 i is formed into a rectangular shape by a formed aperture (not shown) and reduced by the electrostatic lens 722, and a shaped beam of 1.25 mm angle is formed at the center of the pupil separator 723. The shaped beam is deflected to the sample W in a vertical manner by a helium separator 723, and is further reduced to j/5 by the electrostatic lens 724 to illuminate the sample W. The secondary electrons released from the sample w have an intensity corresponding to the pattern data on the sample W, and are enlarged by the electrostatic lenses 72 4 and 741 to be incident on the detector 761. In the detector 761, an image signal corresponding to the intensity of the incident secondary electrons is formed, and the defect of the sample is detected by comparison with the reference image. The ΕχΒ separator 723 is formed in a plane perpendicular to the normal line (above the paper surface) of the sample w surface, and forms a structure in which the electric field and the magnetic field are orthogonal to each other. When the relationship between the electric field, the magnetic field, and the energy and velocity of the electrons meets predetermined conditions, Direct electrons, while others make electrons biased. The inspection apparatus of Fig. 44 is set to a form in which one electron is directly emitted. Figure 5 is a detailed description of the dynamics of the secondary electrons emitted by the rectangular region of the electron that is irradiated with the sample. Released from the sample surface — — — — — — — — — 1111111 ^ « — — — — — — I — (Please read the notes on the back and fill out this page) This paper scale applies to the Chinese National Standard (CNS) A4 size (210 X 297 mm) 7 312767 1286776 A7 _______B7_. V. Description of invention (8) (Please read the note on the back and fill out this page) The secondary electron is enlarged by the electrostatic lens 724 and separated by ExB. The center plane 723a of the 723 is imaged. Since the electric field and the magnetic field of the Exb separator 723 are set to the values of the direct secondary electrons, the secondary electrons are directly emitted, and the targets in the detector 761 are enlarged by the electrostatic lenses 741-1, 741-2, and 741_3. Plate 761a is imaged. Then, it is enlarged by a MCP (Multi Channel Plate, not shown), and an image is formed by a scintillator CCD (Charge Coupled Device) or the like (not shown). The 732 and 733 are installed in the aperture adjuster of the secondary optics. Fig. 54 is a view showing the schematic configuration of a conventional helium separator and the electric field distribution generated. An electric field is generated on the two parallel plate electrodes 723-1, 723-2 to generate a magnetic field orthogonal to the electric field in the two magnetic fields 723-3, 72 3-4. In this configuration, the magnetic poles 723-3 and 723-4 are formed of metal, and therefore, the ground potential is formed, and the electric field is bent toward the ground side. Thus, the electrical boundary distribution is as shown in Fig. 54, and the parallel electric field can only obtain the central cell domain. When the ExB separator of this type of structure is used to map a defect inspection device such as a projection type electronic wire inspection device, the Ministry of Economic Affairs, the Intellectual Property Office of the Ministry of Economic Affairs, cannot enlarge the irradiation area of the electron beam when performing high-accuracy inspection. There is a problem that causes the inspection efficiency to deteriorate. Therefore, another object of the present invention is to provide an ExB separator which can expand a region in which electric field magnetic field strengths are the same and orthogonal to each other on a surface parallel to the sample, and reduce the overall outer diameter. . By using the ExB separator for the defect inspection apparatus, the aberration of the detected image obtained can be reduced to efficiently perform the high-accuracy defect inspection. In addition, 'as mentioned above' in the past, the use of electronic wire inspection semiconductor wafer paper size applies to China National Standard (CNS) A4 specifications (210 xi97 cm ^ 8 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employees consumption cooperatives printed A7 V. Invention When (9) or the pattern of the mask is used, a device is used to send the electron wire to the surface of the sample such as a semiconductor wafer or a photomask to sweep the cat. After the sample is scanned, the surface of the sample is detected. Producing the second charged particles, and making image data according to the detection result, and then comparing each unit or each crystal grain

In contrast, the conventional defect inspection apparatus is characterized in that the surface of the sample is charged by irradiating an electron beam, and the charge generated by the charging causes distortion of the image material, so that the defect cannot be correctly detected. The problem. Since the image data is distorted, the beam current is reduced to reduce the distortion caused by the electric charge, so that the S/N ratio of the secondary electron sub-signal is deteriorated, and the occurrence rate of the detection error is increased. In order to improve the S/N ratio and perform multiple scans and perform averaging processing, the problem of throughput reduction occurs again. Therefore, another object of the present invention is to provide an apparatus for performing a defect inspection apparatus and a device manufacturing method using the same to prevent image distortion caused by charging, or even to generate Image distortion can also minimize distortion. In addition, it is known that the device is irradiated by irradiating a charged particle beam on the surface of the substrate to detect secondary charged particles generated on the surface of the substrate, and the image is formed by the detection result, and each crystal is The granule data is compared to examine image defects formed on the substrate. However, according to the above-mentioned publication, the object to be inspected by the conventional image pickup apparatus, that is, the surface potential distribution of the substrate is not uniform, so that the contrast of the photographed image is incomplete, and the problem of distortion occurs. Therefore, another object to be solved by the present invention is to provide a camera - - ! ! II ^^ _ !1! (Please read the note on the back and then fill out this page) 1286776 A7 V. Invention Description (!0) The device can improve the performance of defect detection without reducing the throughput. Further, another object to be solved by the present invention is to provide an image pickup device that can obtain the secondary electrons from the inspection object. Further, the contrast of the image is improved, and the defect detection performance is improved. Further, another object of the present invention is to provide an image pickup apparatus which can detect by uniformly homogenizing the surface potential distribution of the inspection object. The contrast of the image obtained from the secondary electrons on the surface is increased to reduce the distortion and improve the defect detection performance. Another problem to be solved by the present invention is to provide a device manufacturing method using the above-mentioned image pickup device. Evaluation of the sample of the process order. In the past, the defect inspection equipment for detecting the defect of the sample by detecting the electrons of the semiconductor wafer and the like was detected.

In the semiconductor manufacturing process, Q π: 赤 特 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷1 What is the quality, the potential change rain occurs - the human electron and the reflected electron - the image of the secondary image and / or the secondary element image is mapped to the projection optics; according to the image of the image of the thunder After the display 15 (received inspection (4), the electrons on the surface of the sample ==: the display portion'· the electron beam light irradiated by the electron beam irradiation unit 4·2, and the mapping projection of the secondary electron and the reflected electron to be transformed Electron beam deflection. The defect inspection device can illuminate the secondary electron beam into the actual rectangular area.既The surface of the wafer is applicable to China. Standard (CNS) A4 specification (2) 297 297 public love -------- lit?--------- (Please read the back first Note: Please fill in this page again) 312767 1286776 A7 V. Inventive Note (11 7 o'clock, the test material of the storage device is irradiated with electron beam in a wider area (please read the note on the back side and then fill in this page) An insulator such as dioxotomy or nitrogen dicing is formed, == the surface of the material illuminates the electron beam, and the electric field generated by it is released, and the opposite side is charged and generates electricity. The two-person electron image causes various images. The problem of obstacles is lacking!: The reason is that the above-mentioned situation is the result of providing the equipment and the defect inspection method, which can reduce the image barrier caused by the charging by reducing the surface charge of the sample. Further, a more accurate sample defect inspection is achieved. In addition, another object of the present invention is to provide a semiconductor manufacturing method in which a defect inspection can be performed by using the above defect inspection device in the process of the semiconductor device to achieve the device article. Yield And the printing of defective products is prohibited. In the past, the surface of the sample was printed on a semiconductor circuit or the like by irradiating a charged beam such as an electron beam on a surface of a sample such as a semiconductor wafer. In a device for exposing 'or inspecting a pattern formed on the surface of a sample' or a device for performing high-precision processing of a sample by irradiating a charged beam, a stage for positioning a sample in a vacuum state is used. In the case where the stage must be equipped with a high-precision positioning function, a configuration in which the stage is supported by a hydrostatic bearing non-contact is used. At this time, it is formed by discharge in the range of the hydrostatic bearing. The differential venting mechanism of the high pressure gas maintains the vacuum of the vacuum chamber so that the south pressure gas supplied from the hydrostatic bearing is not directly discharged to the vacuum chamber. 312767 A7

1286776 V. INSTRUCTION OF THE INVENTION (I2) Fig. 55 is an example of a stage of the prior art. In the configuration of the figure, a housing 98 constituting the vacuum chamber C is provided with a front end portion of a barrel 71 of a charged beam device for irradiating a sample with a second electric beam: an electric beam irradiation portion 72. The inside of the lens barrel is evacuated by vacuum piping 71, and the vacuum chamber C is evacuated by vacuum piping 911. Belt: Beam: The same as before 71, the end portion 72 is placed on a sample such as a wafer placed below. Ding..., in the test, using a generally known method to keep it in a detachable way. 94. The sample stage 94 is attached to the χγ stage (the upper side of the 载-direction movable portion 95 of the simple stage W. The γ-direction movable portion 95 is on the guide surface 96a of the movable portion with the X direction of the stage 93. In the phase = (the left and right sides and the lower side shown in Fig. 5), a plurality of hydrostatic bearings 90 are attached, and in the case of maintaining a small gap between the action of the hydrostatic bearing 9 ,, the direction is Y (55th [ The b=^ direction is moved, and a differential exhaust mechanism is provided around the hydrostatic bearing 9〇 to prevent the high-pressure gas supplied to the hydrostatic bearing from being leaked inside the vacuum chamber C. The state thereof is shown in Fig. 56. Grooves 918 and 917' are formed around the hydrostatic bearing 9G. These grooves are frequently performed by vacuum piping and a vacuum pump (not shown).

Empty exhaust. Thereby, the Y-direction movable portion 95 can be supported in a non-contact manner in a vacuum state, and the white man can freely move in the γ direction from the ^BV seven-person μ J. These double grooves 918 ☆ are formed on the surface of the hydrostatic bearing 90 provided with the movable portion % so as to surround the hydrostatic bearing. Further, since the structure of the hydrostatic bearing is generally known, the detailed description thereof will be omitted. As can be seen from Fig. 5, the X direction in which the movable portion in the γ direction is placed can be applied to the Chinese national standard for the paper scale. — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Please read the notes on the back and fill out this page.) Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Printed 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Printed A7 V. Invention Description (13) The concave shape, the singularity and the X-direction movable part 96 also sighs the same static bearing and groove, and is held on the load 7 by the contact table Q7 μ —, which can be freely facing the X Move in direction. By combining the Υ-direction movable portion 95, the 可-direction movable portion 96 can move the sample W to the horizontal position (four) of the front end of the lens barrel, that is, the charged beam illuminating center. Set and illuminate the charged beam. The desired position is on the stage on which the hydrostatic bearing and the differential exhaust mechanism are combined, and the opposite guiding surface 96a or 97a of the hydrostatic bearing 90 is 'high pressure in the hydrostatic bearing when the stage moves. At the middle of the gas, a ®, 慝 至 的 的 的 的 真空 真空 真空 。 。 。 。 。 。 。 。 At this time, the guide surface will be covered with two or more conditions. The gas is adsorbed when it is in contact with the pressurized gas, and the adsorbed gas is released in the vacuum ring. Based on the above state, the stage will cause the processing chamber when it is moving. The phenomenon in which the degree of vacuum inside is deteriorated produces a problem that the processing such as the exposure 1 inspection or processing performed by the above-described charged beam cannot be stabilized, and the sample is contaminated. Accordingly, another object to be solved by the present invention is to provide a charged beam device which can prevent the occurrence of a degree of deterioration in vacuum degree and to stably perform processing such as exposure, inspection or processing performed by the above-described charged beam. In addition, another object to be solved by the present invention is to provide a charged beam device having a non-contact support mechanism supported by a hydrostatic bearing and a vacuum sealing mechanism controlled by a differential exhaust gas, which can be in a charged beam irradiation region and A pressure difference is generated between the support portions of the hydrostatic bearing. Another object to be solved by the present invention is to provide a charged bundle--------------------^--------- (please read the back Note: Please fill out this page again) Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 1286776 A7

5. Inventive Note (W), which reduces the gas released by the surface of the component facing the hydrostatic bearing. Another object of the present invention is to provide a defect inspection apparatus for inspecting a surface of a sample using the above-described charged beam device, or an exposure apparatus for drawing a pattern on a surface of a sample. Another object of the present invention is to provide a semiconductor manufacturing method using the above-described charged beam device to fabricate a semiconductor device. Further, as shown in Fig. 55, since the differential exhaust mechanism is provided on the stage in which the above-described conventional hydrostatic bearing and differential exhaust mechanism are combined, the hydrostatic bearing type used in the atmosphere is used. Compared with Taiwan, its structure is large and complicated, so that the reliability of the stage is reduced, which causes a problem of cost increase. Accordingly, another object of the present invention is to provide a charged ray apparatus having a simple ventilating mechanism of a χ-free stage and having a simple and lightweight structure. Another object to be solved by the present invention is to provide a charged beam device in which a differential exhaust mechanism is provided, which can perform vacuum evacuation in a housing in which a χγ stage is accommodated, and can also be used in the sample surface. Exhaust is performed in the area irradiated by the charged beam. Another object to be solved by the present invention is to provide a defect inspection apparatus for inspecting a surface of a sample using the above-described charged beam device, or an exposure apparatus for drawing a pattern on a surface of a sample. Another object to be solved by the present invention is to provide a semiconductor manufacturing method for fabricating a semiconductor device using the above-described charged beam device. As described above, conventionally, in the semiconductor manufacturing process, one type is often used (please read the precautions on the back side first) Fill in this page)

This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 14 312767 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1286776 V. Invention description (b 7 inspection u 'can be detected in semiconductor crystal The secondary electrons generated by one-person:sub-particle are irradiated on a sample such as a circle to inspect the defect of the sample. The defect inspection-reparation technique has a technique of applying image recognition technology to achieve automation and efficiency of defect inspection. The pattern image data of the surface to be inspected on the surface of the sample obtained by detecting the secondary electrons and the reference image data of the sample surface which is previously memorized are matched by the electric cymbal, and the presence or absence of the sample defect is automatically determined based on the calculation result. Especially in the field of semiconductor manufacturing, as the pattern is highly refined, the requirements for detecting fine defects are also increasing. Under such a state, a defect inspection apparatus using the above image recognition technology is also required to have a higher level. Identification accuracy. However, in the past technology, the electricity is irradiated once in the inspection area of the sample surface. The secondary electron beam image obtained by the line and the reference image prepared in advance may have a difference between the defect and the accuracy of the defect inspection. When the difference is one time, the electron beam irradiation area is separated from the wafer, or part When the inspection pattern is not included in the inspection image of the electronic wire, it will cause great problems, and it cannot be solved simply by the technique of optimizing the matching region in the detection image. This problem is especially true for high-precision patterns. The inspection is undoubtedly a fatal flaw. 9 Therefore, another object of the present invention is to provide a defect inspection apparatus capable of preventing the defect inspection accuracy caused by the difference between the image to be inspected and the reference image. Another object of the present invention is to provide a semiconductor manufacturing method which can be used in the manufacturing process of a semiconductor device by using the above defect inspection device. -^--------- (Please read the notes on the back and fill out this page) This paper size applies to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 15 312767

仃 Sample defect inspection to improve the yield of the device and to terminate the shipment of the defective product. 1286776 V. EMBODIMENT OF THE INVENTION (16) The present invention is basically a method for improving the shortcomings of the inspection speed by using a so-called mapping projection method using an electron beam, and the mapping projection method will be described below. The mapping projection method is to irradiate the observation area of the sample with a single electron line (without performing a full scan and irradiating only a predetermined area), and the secondary electrons from the irradiation area are formed into an electron beam image by the lens system at a time. Imaged. The imaged image information is converted into an electrical signal by a secondary CCD (solid-state imaging device) or a TDI_CCD (linear image sensor) for output to the CRT or to the device. The defect of the sample wafer (semiconductor (Si) wafer in the middle of the process) is detected from the image information. In terms of CcD, the moving direction of the stage is the short axis direction (the long axis direction is also possible), and the moving mode is the step repeat mode. On the other hand, in the movement of the stage of the TDI-CCD, the continuous movement is performed in the cumulative direction. Since the TDI_CCD can continuously acquire images, the TDI-CCD is often used for continuous defect inspection. The decomposition energy depends on the magnification and precision of the imaging optical system (secondary optical system), and the decomposition energy of 0·05 μη is obtained in the embodiment. In this example, when the decomposition energy is 〇·1μηη, the electron beam irradiation condition is in the range of 200 μm χ 50 μm _1·6 μΑ, and the inspection time is about 1 hour per 20 cm wafer, the SEM method 8 times effect can be obtained. The TDI-CCD used here, the bear is 2048 pixels (pixel) X512 segment, and the line rate is 3,3pS (line frequency 300kHz) - (please read the back note before filling this page) · 11 11 111 ·1111111- Sewing Ministry of Intellectual Property Bureau employee consumption cooperation 衽 printed paper size applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 16 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. EMBODIMENT OF THE INVENTION (Π The irradiation area of this example is the TDI-CCD state, but the irradiation area can be changed according to the object to be irradiated. The problem of this mapping method is that: (1) Since the electron beam is irradiated once, it is easy to sample. (2) Since the electron beam current system obtained according to the present embodiment is limited (about 1.6 μm or so), the inspection speed is hindered. Therefore, the present invention has been made to solve the above conventional problems. According to a first aspect of the invention, the charged object or the electromagnetic wave is irradiated as an inspection object, and in the inspection device for inspecting the inspection object, the inspection includes: the inspection can be controlled in the real jade a working chamber of the object to be inspected; a beam generating mechanism that generates either a charged particle or an electromagnetic wave as a beam; guides the object to be inspected by holding the beam in the working chamber, and detects & The secondary charged particles generated by the inspection object are guided to the electron optical system of the image processing system; the image processing system for forming images by the secondary charged particles; and the display object is displayed and/or memorized according to the output of the image processing system The information processing system of the state information; and the stage device that holds the inspection object in a relatively movable manner with respect to the light beam. The second invention of the present invention is the detection device of the first invention, comprising: maintaining the inspection object, and According to a third aspect of the present invention, in the inspection apparatus of the second aspect of the present invention, the loading and unloading mechanism includes the following means: introducing a clean gas into the front inspection object, a small environmental device for preventing dust from adhering to the aforementioned inspection object; installed in the aforementioned small plastic environment device and the foregoing work The chambers are 'independent' at the same time at least one pair of in-----------------I---- in the vacuum gas _ control (please read the back first) Note on this page. This paper size applies to the Chinese National Standard (CNS) A4 specification (21〇x297 public η 312767 1286776 A7)

5. The loading chamber of the invention description (IS) (please read the precautions on the back side and fill out this page), and the conveying device capable of transporting the inspection object between the small environmental equipment and the working chamber, and One of the loading devices is loaded between the transfer device and the other transfer device, and the transfer chamber is supported by the vibration interrupting device. According to a fourth aspect of the present invention, in an inspection apparatus according to the first aspect of the present invention, the apparatus for supplying the inspection object to the loading device of the working chamber is provided, and the inspection is disposed in the working chamber. The object irradiates the charged particles to reduce the charging unevenness of the inspection target, and a potential applying mechanism that applies a potential to the inspection target. According to a fifth aspect of the present invention, in the inspection apparatus of the third aspect of the present invention, the first loading chamber and the second loading chamber which are independent of each other and capable of gas control are provided, and the inspection is carried out between the first loading chamber and the outside. The first conveying device of the object is placed in the second loading chamber to transport the second conveying device to be inspected between the first loading chamber and the stage device. The sixth invention of the present invention is printed in the first 'second and third inspection apparatuses of the first and second inspection apparatuses of the Ministry of Economic Affairs, and the position of the inspection target corresponding to the front electronic optical system is observed. a calibration control device for inspecting an object surface to control alignment; and a laser interference distance measuring device for detecting the coordinates of the inspection object on the front stage device, wherein the calibration control device can be utilized for the inspection object The pattern in the to determine the coordinates of the object to be inspected. According to the seventh invention of the present invention, in the first, second or third inspection apparatus, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 18 312767 1286776 Ministry of Economic Affairs Intellectual Property Office employee consumption cooperative System A7 V. Inventive Note (19) where 'the positioning of the aforementioned inspection object includes · T has 3 • The general positioning performed in the small environmental space described, and the in the case of Lun Bing # 1 # 汉隹Positioning in the 方向 direction and positioning in the direction of rotation on the station. An eighth aspect of the invention is the inspection apparatus according to any of the first, second, and third inventions, wherein the electronic optical system is provided with: U ^ \ using an electric field and a magnetic field orthogonal to the potential field The 嘈 position 嘈 嘈 嘈 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; An electrode capable of controlling the electric field intensity in the aforementioned electron beam irradiation surface of the sample to be inspected. The invention of claim 9 is the inspection apparatus according to any one of the first, second or second invention, which is a separator which is capable of incident on charged particles and which is substantially opposite to the charged particles. The secondary charged particles ' selectively bias the charged particles or the secondary charged particles, wherein the electrode for generating an electric field is composed of three or more pairs of non-magnetic conductor electrodes, and is formed into a cylinder. Configuration. According to a tenth aspect of the invention, the apparatus of any one of the first, second or third invention, wherein the apparatus is provided with charged particles which are pre-inspected by the charged particles before the inspection Irradiation section. According to an eleventh aspect of the invention, the apparatus of any one of the first or second invention, wherein the apparatus is provided with means for homogenizing or reducing the charge charged in the inspection object. According to a twelfth aspect of the invention, the apparatus of any one of the first, second, or second invention, wherein the apparatus is applicable to the Chinese National Standard (CNS) A4 specification (210) in the paper size of the detecting machine. X 297 mm) 19 312767 -----------^11 Packing·-------Booking--------- (Please read the notes on the back and fill in the form) Page 158 l286776 Ministry of Economic Affairs Intellectual Property Office Employees' Cooperatives Printed A7 V. Inventive Note (20) During the detection of the secondary charged particle image, the sample is supplied with an electron lower than the charged particle energy. According to a twelfth aspect of the invention, the inspection apparatus of any one of the first, second, or the invention, wherein the stage is a χγ carrier, the χγ stage is housed in a work chamber, and The static pressure bearing is supported in a non-contact manner in the working chamber, and the working chamber accommodating the stage is vacuum-exhausted, and the portion of the charged particle beam device that irradiates the charged particle beam is irradiated around the portion of the charged particle beam device. Providing an exhaust region of the charged particle beam on the surface of the irradiated sample A differential exhaust mechanism. The invention according to any one of the first, second or third invention, wherein the apparatus is provided with a device for placing a sample on a load stage and in a vacuum The sample is moved to an arbitrary position to irradiate the sample surface with a charged particle beam, which is provided with a non-contact type support mechanism supported by a hydrostatic bearing, and a vacuum seal controlled by differential exhaust gas. The mechanism is provided with a device for irradiating the charged particle beam on the sample surface and a device for reducing the electric conduction between the static pressure bearing support portion of the χγ stage, the charged particle beam irradiation region and the hydrostatic bearing support portion. There will be a pressure difference between them. A fifteenth invention according to any one of the first, second or third invention, wherein the apparatus comprises: partially overlapping and mutually displaced on the delineated sample An image acquisition mechanism for a plurality of images of an area to be inspected; a memory mechanism for memorizing the reference image; by 丨丨_丨丨_丨丨_丨丨^i------booking----1- (please read first Phonetic on the back? Please fill out this page again)

1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention description (21) than lucky month; The image of the plurality of areas to be inspected obtained by the image acquisition means and the reference image stored by the image-receiving mechanism are used to determine the defect determination means for the sample defect. According to a sixteenth aspect of the invention, in the device manufacturing method, the inspection apparatus of the invention of the first to fifteenth invention is used to detect a wafer defect in the middle of the process or thereafter. According to the inventions of the first to the sixteenth aspects of the invention, the following effects can be obtained. (1) The overall configuration of an inspection device using a map projection method with charged particles can be obtained, and the object can be inspected by high throughput processing. (2) It is possible to apply clean gas to the inspection object in a small environmental space, to prevent dust from adhering, and to inspect the object to be inspected by the dust in the space of the sensor surface L for observing the cleanness. (3) Since the shock chamber is integrally supported by the shock absorbing device and operates, the supply and inspection of the inspection target device can be performed without being affected by the external environment. (4) The wafer according to the seventeenth aspect of the invention is characterized in that the π-electrode is irradiated onto the sample to be inspected. a beam generating device; a decelerating electric field type objective lens that decelerates the charged particles while accelerating the secondary charged particles generated by the charged particles irradiated to the sample to be inspected; and detects a detector of the secondary charged particles; a potential field orthogonal to the magnetic field, the ΕχΒ deflector that deflects the secondary charged particles to the detector direction, and is disposed between (5) the decelerating electric field type objective lens and the sample to be inspected, ------Install--------Book--------- <Please read the notes on the back and fill in this page)

1286776 V. DESCRIPTION OF THE INVENTION (22) The irradiation optical axis of the front f charged particles has a substantially axisymmetric shape, and can control an electrode having an electric field intensity at the surface of the charged particle irradiated surface of the sample to be inspected. According to a seventeenth aspect of the invention, in the inspection apparatus of the seventeenth aspect of the invention, the voltage supplied to the electrode for controlling the electric field intensity is controlled by the type of the sample to be inspected. According to a seventeenth aspect of the present invention, in the inspection apparatus of the seventeenth aspect, the sample to be inspected is a semiconductor crystal, and a voltage for supplying the electric field intensity to the electrode is based on the semiconductor wafer. No control is provided with a through body. According to a twentieth aspect of the invention, the device manufacturing method of the inspection apparatus according to any one of the seventeenth to nineteenth invention, wherein the inspection apparatus is used to inspect the Check the defects of the semiconductor wafer of the sample. # According to the seventeenth to twentieth inventions of the present invention, the following effects can be obtained. Printed by the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs, there is an electrode between the sample to be inspected and the objective lens. The electrode has a substantially axisymmetric shape corresponding to the illumination axis of the ferroelectric particle, and can control the above-mentioned charged particle irradiation of the sample to be inspected. The electric field strength of the surface, therefore, controls the electric field between the sample being inspected and the objective lens. Since the sample to be inspected and the objective lens are provided with a substantially axisymmetric shape corresponding to the irradiation axis of the charged particles, and the electrode located on the surface of the charged particle irradiation surface of the sample to be inspected can be weakened, the electrode can be eliminated. Check the discharge between the sample and the objective lens. This paper scale is applicable to China National Standard (CNS) A4 specification (210x297 mm). 22 312767 1286776 A7 V. Invention description (23) Because the reduction of the applied voltage of the objective lens is not changed, it can effectively make the second The charged particles pass through the objective lens, which improves the detection efficiency' and obtains a signal with a good S/N ratio. &lt;Please read the precautions on the back side and fill in this page.) The voltage for weakening the electric field strength of the charged particle surface # in the above-mentioned sample to be inspected can be controlled according to the type of sample to be inspected. For example, when the sample to be inspected is an object to be inspected which is easily discharged between the objective lenses, the electric field intensity of the charged particle irradiation surface of the test sample can be weakened by changing the voltage of the electrode to prevent discharge. The voltage supplied to the electrode can be changed depending on the presence or absence of the poor semiconductor of the semiconductor wafer, that is, the voltage for weakening the electric field intensity of the electron beam irradiation surface of the semiconductor wafer can be changed. For example, when the sample to be inspected is an object to be inspected which is easily discharged between the objective lenses, the electric field strength of the charged particle irradiation surface of the sample to be inspected can be weakened by changing the voltage of the electrode to prevent discharge, in particular, The generation of discharge around the body or through body. Since discharge between the through body and the objective lens can be prevented, discharge damage such as a semiconductor wafer pattern is not generated. The Ministry of Economic Affairs' Intellectual Property Office employee consumption cooperative prints that the voltage supplied to the electrode is lower than the charge supplied to the sample to be inspected, so that the electric field strength of the charged particle irradiation surface of the sample to be inspected can be weakened, and the discharge of the sample to be inspected can be prevented. . Further, since the voltage supplied to the electrode is formed to a negative potential and the sample to be inspected is grounded, the electric field intensity of the charged particle irradiation surface of the sample to be inspected can be weakened, and the discharge of the sample to be inspected can be prevented. The eleventh invention of the present invention is a type of paper with a first charged particle size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 23 312767 1286776 Printed by the Intellectual Property Office of the Ministry of Economic Affairs A7 B7 V. INSTRUCTIONS (24) The sub-line, and the second charged particle line that runs in the opposite direction to the i-th charged particle line _ ^ ^, and the spring, can be described as the first electrification A second charged particle line selectively biased ExB separator, wherein: ^ is used to generate an electric field, and 禆 is composed of two + or more non-magnetic conductor electrodes and is substantially circular Cylindrical configuration. The twenty-second item of the invention

The Moon is the ExB 7 knife cutter of the twenty-first invention, in which a parallel plate magnetic pole that generates a magnetic field is disposed outside the cylinder composed of the two or more pairs of non-magnetic conductor electrodes, and is parallel to the foregoing A protrusion is formed on the opposite peripheral portion of the plate electrode.

According to a twenty-third aspect of the present invention, in the magnetic field line path of the magnetic field generated by the ExB separator of the twenty-second invention, most of the paths other than the parallel plate magnetic poles are the same as the foregoing three The cylinder formed of the above non-magnetic conductor electrode has the same cylindrical shape. According to a twenty-fourth aspect of the present invention, there is provided an ExB separator according to the twenty-second and twenty-third aspects of the invention, wherein the parallel plate magnetic pole is a permanent magnet. According to a twenty-fifth aspect of the invention, the apparatus for an ExB separator according to any one of the twenty-first to twenty-fourth invention, wherein the first charged particle beam or the second charged particle beam Either one is a primary charged particle beam that illuminates the sample to be inspected, and the other is a secondary electro-chemical particle line generated from the sample by irradiation of the aforementioned-sub-charged particle beam. According to the twenty-first to twenty-fifth inventions of the present invention, the following effects can be obtained. 312767 ___________^--------- ^--------- (Please read the note on the back and fill out this page) 1286776 A7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative print ____Β7__ five (Invention) (25) The electric field and the magnetic field around the optical axis can expand and extract the same region. Even if the irradiation range of the charged particles is expanded, the aberration transmitted through the ΕχΒ separator can be changed to the correct value. In addition, since the magnetic pole is provided outside the generating electrode while the protrusion is provided in the peripheral portion of the magnetic pole forming the magnetic field, not only the same magnetic field can be generated but also the deformation of the electric field caused by the magnetic pole can be reduced. Since the magnet generates a magnetic field, the entire separator can be housed in a vacuum. Further, by forming the electric field generating electrode and the magnetic path forming magnetic flux path into a coaxial cylindrical shape having the optical axis as the central axis, the ΕχΒ separator can be downsized as a whole. According to a twenty-sixth aspect of the present invention, there is provided a charged particle irradiation unit, a lens system, a deflector, a ΕΧΒ filter (Wiener filter), and a secondary charged particle detector, and the lens system is deflected by the lens system And a ΕχΒ filter, the charged particles are irradiated to the sample inspection region by the charged particle irradiation unit, and the second secondary charged particle detector is used in the secondary charged particle detector by the lens system, the deflector, and the ΕχΒ filter. The mapped projection type electron beam inspection apparatus in which the charged particles are imaged and the electrical signal is formed as an image is provided with a charged particle irradiation unit, and the inspected region before the inspection can be irradiated by the charged particles. According to a twenty-seventh aspect of the invention, in the device of the twenty-sixth aspect, the charged particles are an electron, a positive or negative ion, or a plasma. According to a twenty-seventh aspect of the invention, in the device t of the twenty-sixth or twenty-seventh aspect, the energy of the charged particles is 1 〇〇 eV or less. The twenty-ninth invention of the present invention is in the twenty-sixth or twenty-seventh item of the paper scale application (CNS) A4 specification (2) G χ 297 cc) 312767 (please read the note on the back first) Fill in this page) 装--------订---- # 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention description (26 invention equipment, the energy of the aforementioned charged particles is 3 According to a thirtieth aspect of the invention, in the apparatus manufacturing method, the inspection apparatus according to any one of the sixteenth or twenty-ninth invention is used to inspect a pattern in the course of manufacturing the apparatus. According to the invention of items 26 to 30, the following effects can be obtained. Since the treatment before the detection of the charged particles can be avoided, the detected image distortion caused by the charging can be avoided, or even if there is distortion, it is only slightly distorted. Correct measurement of defects ◊ In addition, since the stage can be circulated in the past, a large amount of current rain is applied to scan the stage, so that the secondary hands can be detected in a large amount and a detection number with a good S/N ratio is obtained. Promotion The reliability of the defect is measured. Furthermore, since the S/N ratio is large, good image data can be produced and the throughput of the inspection can be increased even if the stage is scanned early. According to the invention, the charged particles emitted from the light beam generating device are irradiated to the object, and the secondary charged particles released from the object are detected by the detector to collect the image information of the object, the defect inspection of the object, and the like. According to a thirty-second aspect of the invention, in the imaging device of the thirtieth aspect of the invention, the device is disposed in the light beam. The apparatus of the present invention is provided with an electrode capable of controlling the charged charge. The thirty-third invention of the present invention is in the thirteenth aspect of the invention, wherein the mechanism is designed to measure time. In the free time, enter -------丨-丨-装----1--丨-------- (Please read the phonetic on the back? Please fill in this page again) Scale bar country national standard (CNS) A4 A grid ⑽X 297 well meal) 26 312767 1286776 A7 V. Description of the Invention (27) for action. According to a thirty-fourth aspect of the present invention, in the image pickup device of the thirtieth aspect of the present invention, at least one of the plurality of charged particles----S---rtt is read first Precautions on the back side Fill in this page) ^ ", an optical system that strikes the aforementioned object; at least one of the secondary optics that directs the electrons emitted by the object to more than one detector The plurality of charged particle beams are irradiated to each other at a separated position by the distance decomposition energy of the secondary optical system. The thirty-fifth invention of the present invention includes the use of the thirty-first item to According to a thirty-fourth aspect of the invention, in the image pickup apparatus of the invention, in the process of detecting a wafer defect in the middle of the process or after the completion of the process, the following effects can be obtained according to the inventions of the third to third aspects of the invention (1) It is not necessary to reduce the image distortion caused by charging without depending on the state of the object to be inspected. (2) The charging equalization and offset are performed by using the neutral time of the previous measurement time', so there is no influence on the throughput. . (3) Since it can be processed on the spot, it is not necessary to process the time afterwards, and it is stored in the Ministry of Economic Affairs, the Intellectual Property Office, and the employee's consumption cooperatives. * (4) High-precision image observation and defect detection can be performed at high speed. According to a thirty-sixth aspect of the invention, there is provided a charged particle irradiation mechanism capable of irradiating one or two undercharged particles on a sample; and the secondary charged particles emitted from the sample are formed into a mapped projection and formed by a projection projection by irradiation of the primary charged particles; The organization, the detection mechanism that will be detected by using the image formed by the mapping projection mechanism as the sample electronic image', and detected by the detection mechanism

312767 This New Zealand standard applies to the Chinese National Standard (CNS) A4 specification (2) G X 297 1286776 A7 B7 V. Invention Description (28) Electronic image 'determination of defects in the sample defect, at least the detection mechanism during the detection of the electronic image The electrons having a lower energy than the primary charged particles are supplied to the sample. In the thirty-seventh aspect of the invention, the primary charged particles are irradiated to the sample by the charged particle irradiation means, and the secondary charged particles emitted from the sample are formed into a map projection by the mapping projection mechanism by the irradiation of the primary charged particles. And imaging in the detection mechanism. The sample from which the secondary charged particles were discharged was charged at a positive potential. The detecting mechanism detects the imaged image as an electronic image, and the defect determining mechanism judges the defect of the sample based on the detected electronic image. In this case, at least the detection means supplies electrons having a lower energy of the primary charged particles to the sample during the electronic image detection period. The low-energy electrons are electrically neutralized by the positively charged sample by the release of secondary electrons. In this way, the secondary charged particles are imaged by the positive potential of the sample, and the detection mechanism can detect the electronic image that has reduced the image barrier. Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumer Cooperatives Printed ------------- (Please read the notes on the back and fill in this page) About the electrons with lower energy of the charged particles, for example, the best For the use of uv optoelectronics. ...photoelectron refers to an electron that emits light according to the photoelectric effect after it is irradiated with light such as metal (IV). Further, the 'charged particle irradiation mechanism means an individual low-energy electron generating mechanism', for example, electrons can be used to generate electrons having a lower energy than the primary charged particles. In addition, in the electrons released from the sample by the irradiation of the primary charged particles, in addition to the secondary charged particles generated by the internal electrons released from the surface by the collision of the primary charged particles, the surface reflection of the (four) material is also included. I This paper scale applies to China. Job 7 1286776 A7 ____B7_ _____ V. Description of invention (29) Reflected electrons generated by charged particles at one time. Of course, the electronic image detected by the detecting mechanism of the present invention also includes the benefit generated by the reflected electron. The thirty-seventh invention of the present invention comprises the following mechanism: a charged particle irradiation mechanism that irradiates a primary charged particle to a sample; and the secondary charged particle released from the sample is formed into a map projection by the irradiation of the primary charged particle. a mapping projection mechanism; the image formed by the mapping projection mechanism is used as a detecting mechanism for detecting the electronic image of the sample; the defect determining mechanism for determining the defect of the sample according to the electronic image detected by the detecting mechanism; and the UV photoelectron can be supplied to The uv photoelectron supply mechanism of the sample. In the invention of the thirty-seventh aspect, as long as the UV photoelectron supply mechanism (or in the supply of UV photoelectrons) can achieve the effect of alleviating the image disorder of the present invention, low-energy electrons can be supplied to the sample at any time and any period of time. . For example, before performing a charged particle irradiation or secondary charged particle imaging, a charged particle imaging is performed, and before the electronic image is detected, the Ministry of Economic Affairs, the Intellectual Property Bureau, the employee consumption cooperative, prints the time - the uv photoelectron is started. supply. In addition, as shown in the figure, the UV photocell or P may be continuously supplied during the detection of the secondary charged particles for detection or detection in the electronic image, and the sample may be fully neutralized as long as the sample is fully neutralized. The UV photoelectron is stopped. :: The thirty-eighth invention of Ming's is a kind of defect in the inspection of sample defects, including: irradiation of the sub-charged particles in the above-mentioned trials. Mi J ^ The sample is irradiated by charged particles of the mountain. Forming a map formed by the second n-charged particles of the front ηz as a map projection: a process detected by the aforementioned mapping projection mechanism; and detecting according to the detection process

Specifications (2). 297 297 public &quot;I 29 -----------^ —— (Please read the note on the back and fill out this page) 312767 1286776 A7 ___B7 V. Invention Description (3G) Electronic image, judge In the defect determination process of the sample defect, at least the detection process supplies electrons having a lower energy than the primary charged particles to the sample during the detection of the electronic image. According to a thirty-ninth aspect of the present invention, a defect inspection method for inspecting a sample defect includes: irradiating a primary charged particle to an irradiation process of the sample; and releasing the sample by the primary charged particle irradiation; The secondary charged particles are formed into a mapping projection process for mapping projection; the detection process is performed by using the image formed by the mapping projection mechanism as a sample electronic image; and the foregoing detection according to the front detection process The electronic image is used to determine the defect determination process of the sample defect, and further includes a uv photoelectron supply process for supplying UV photoelectrons to the sample. The fortieth invention of the present invention, in the semiconductor manufacturing method, comprises: using the inspection apparatus of the thirty-sixth or thirty-seventh invention to perform a process for checking a defect of a sample necessary for the manufacture of a semiconductor device. According to the 36th to 40th inventions of the present invention, the following effects can be obtained. Since the electrons having a lower energy of the charged particles are supplied to the sample, the release of the secondary charged particles can reduce the positive charging of the surface of the sample and eliminate the image barrier of the secondary charged electrons caused by the charging. It can check the excellent effect of sample defects with higher precision. Further, in the device manufacturing method, if the defect inspection device is used to perform the defect inspection of the sample, it is possible to obtain an excellent effect of improving the yield of the product and avoiding the shipment of the defective product. • Pack--- (Please read the phonetic notes on the back first and then fill out this page) ·. 4 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed This paper scale applies China National Standard (CNS) A4 specification (210 X 297 mm) 30 312767 1286776 Hammers Department Intellectual Property Bureau employee consumption cooperation, social printing A7 five 'invention description (31 y The forty-first invention of the invention is placed on a χγ stage and placed under vacuum and will be under vacuum The sample is moved to an arbitrary position to irradiate a charged particle beam onto a device on the surface of the sample, wherein the χγ stage has a non-contact support mechanism supported by the hydrostatic bearing, and is differentially a vacuum sealing mechanism controlled by the exhaust gas; a partition wall for reducing the conductance between the irradiated portion of the sample on the sample surface and the static f bearing support portion of the crucible stage; A pressure difference is generated between the particle beam irradiation region and the hydrostatic bearing support portion. In the forged particle preparation of the forty-first aspect of the invention, the differential lining is included in the partition wall system. Gas structure. The invention The π-electron particle beam apparatus according to the forty-first and the forty-second invention, wherein the partition wall has a cold trap function. The charged particle beam apparatus of one of the fortieth to forty-third inventions, wherein the said wall system is installed in the vicinity of the electric particle beam equipment material and the static bearing. According to a forty-fifth aspect of the invention, in the charged particle beam apparatus of the fourth aspect or the fourth invention, in the crucible, the gas system supplied to the static pressure bearing of the XY stage is nitrogen gas or In the case of the charged particle beam apparatus of one of the fortieth and even the invention, wherein the &quot; ί ' can be reduced by the aforementioned χγ carrier At least the gas on the surface of the opposite part of the bearing. /, Static pressure -----------I installed - (Please read the note on the back and fill out this page) Order: #氏张尺寸Applicable Chinese and Canadian Standards (CNS) A4 Specifications (10) χ 297 Public Love 31 312767 1286776 Ministry of Economics Production Bureau Staff Consumer Cooperative Printed A7 V. Invention Description (32) The forty-seventh invention of the present invention, wherein any one of the fortieth to forty-sixth inventions is used to constitute an inspection A wafer defect inspection apparatus for a defect of a surface of a semiconductor wafer. The invention of claim 48, wherein the apparatus of any one of the fortieth to forty-sixth invention is used to form a surface of a semiconductor wafer Or an exposure apparatus for depicting a circuit pattern of a semiconductor device on a reticle. The invention of the forty-ninth aspect of the invention is the semiconductor manufacturing method, wherein the apparatus of the fortieth to forty-eighth invention is used Manufacturing semiconductors. According to the 41st to 49th inventions of the present invention, the following effects can be obtained. (1) The stage device can perform high-precision positioning in a vacuum state, and the pressure at the position where the charged particle beam is irradiated is not easily increased. In other words, the execution of the charged particle beam for illuminating the sample can be performed with precision. (2) The gas released by the static pressure pumping support portion is almost impossible to pass through the charged particle beam irradiation region via the separator. Thereby, the degree of vacuum of the charged particle beam irradiation position can be made more stable. (3) Since the released gas is hard to pass through the charged particle beam irradiation region, it is easy to maintain the vacuum degree of the charged particle beam irradiation region. • Γ 4) Mu (Λ? r*-* ^ w 1 to T ' is divided into a charged particle beam irradiation chamber, a static pressure from the jβ to the intermediate chamber, and the intermediate chamber by a small conductance zone. According to the low-pressure sequence 77, the charged particle beam irradiation chamber, the intermediate chamber, and the static pressure sleeve to the towel constitute a vacuum exhaust system. The pressure change in the intermediate chamber can be adjusted by the paper size _ 彳 ( (2) 〇 X 297 (Please read the note on the back and fill in this page) Pack # 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention description (33 / lower control room, charged particle beam irradiation room The force variation is further reduced by another partitioning device, and the I force variation can be reduced to the extent that no substantial problem occurs. (5) The pressure rise can be suppressed when moving the stage. (6) On the move When the stage is used, the rise of the force can be suppressed to a lower level. (7) Since the positioning function of the high-precision stage is provided, it is possible to obtain an inspection apparatus that stabilizes the vacuum degree of the irradiation area of the electric particle beam, and further provides High inspection performance without causing sample contamination (8) Due to the positioning function of the high-precision stage, an exposure device that stabilizes the vacuum of the charged particle beam irradiation area can be obtained, thereby providing the exposure precision between the types of the day without causing sample contamination. (9) It is possible to manufacture a semiconductor by using a positioning function with a high-accuracy stage and a device for stabilizing the charged particle beam, and the area of the shot area to form a fine semiconductor circuit. The fiftyth invention is an inspection apparatus and method for inspecting a defect of a sample, which comprises the following mechanism: an image acquisition mechanism capable of partially overlapping and mutually displacing a plurality of inspection area images on the sample; The memory mechanism of the reference image; ^ by comparing the image of the plurality of inspected regions obtained by the image capturing means with the reference image memorized in the memory means to determine the defect determining means of the sample defect. 丨ί! ·Installation·—I (please read the notes on the back and fill out this page)

312767 1286776 A7. The invention according to the fifty-first aspect of the present invention, characterized in that, in the inspection apparatus and method of the fiftyth invention, the primary charged particle beam is separately irradiated in the foregoing plural number to be inspected In the region, the charged particle irradiation mechanism for discharging the secondary charged particle beam from the sample, the shirt image acquisition mechanism sequentially acquires the secondary charged particle beam released from the plurality of inspection regions, and sequentially obtains the plural The image of the area being inspected. According to a fifty-second aspect of the present invention, in the inspection apparatus and method of the fifty-first aspect, the charged particle irradiation mechanism is provided to release a particle of a primary charged particle, a source, and a source The primary biasing mechanism for the charged particles in the primary direction deflects the primary charged particles released by the particle source by arranging the deflecting mechanism, thereby sequentially irradiating the primary charged particles to the plurality of inspected regions. The fifth and second inventions of the present invention are in the fiftyth and fifty-second items. The inspection apparatus and method include: a photon system that irradiates the sub-charged particles to the sample. And directing the secondary charged particles to the inspection optical system. / The fifty-fourth invention of the invention, in the semiconductor manufacturing method, is a process for inspecting a wafer defect in a process or a finished product by using any of the items of the 50th and fifty-third inventions . According to the fifth to the inventions of the present invention, effects can be obtained. By separately obtaining the partial overlap on the above-mentioned samples and shifting the mutual displacement of the paper size, the _ home standard (CNS_) A4 specification (2) 0 x 297 public love one '34 312767 ------------ (Please read the precautions on the back and fill out this page.) Order. Ministry of Economic Affairs Intellectual Property Office Staff Cooperatives Print 1286776 A7 V. Invention Description (35) Multiple inspection area images, and compare the images of the inspected areas with Base (please read the precautions on the back and fill out this page) The standard image is used to check the sample defects, and the accuracy of the defect inspection caused by the difference between the image to be inspected and the reference image is reduced. Further, according to the apparatus manufacturing method, if the defect inspection apparatus of the above-mentioned defect inspection apparatus is subjected to defect inspection of the sample, it is possible to obtain an excellent effect of improving the yield of the product and avoiding the shipment of the defective product. According to a fifty-fifth aspect of the invention, in the apparatus for irradiating charged particles on a sample placed on a stage, wherein the χγ stage is housed in the body, and the static pressure bearing is used The contact mode is supported by the casing, and the screaming body of the load port is vacuum-exhausted, and the charged particle beam is disposed around the portion of the sample surface where the charged particle beam is irradiated, and is disposed on the surface of the sample. The differential venting machine for exhausting the charged particle irradiation region "the high-pressure gas for the static pressure bearing of the second to the middle bleed" can be first connected to the vacuum venting gas by the gas connected to the vacuum enthalpy. Rowing: By placing a charged waste...-differential exhaust mechanism around the portion where the charged particle beam is irradiated, it is possible to stabilize the direct beam sound in the vacuum chamber by the target beam*, , and the field &amp; 'reachable treatment two: two = the carrier of the hydrostatic bearing type load-bearing building used in the same type of charged particle beam table for the corresponding sample), and can handle the static pressure bearing beam of the mechanism. The sample on 0 is stably charged. The fifty-sixth one of the present invention In the fifty-fifth invention of the charged 312767 1286776 A7 V. The invention (37) The fifty-ninth invention of the invention 'is a semiconductor using the apparatus of the fifty-fifth or fifty-eighth invention to manufacture a semiconductor Manufacturing method. -----------^ —— (Please read the note on the back and fill in this page) With high precision stage positioning function, and charged particle beam A stable semiconductor device can be used to manufacture a semiconductor, and a fine (four) circuit can be formed. According to the 55th to 59th inventions of the present invention, the following effects can be obtained. (1) Use of a hydrostatic bearing type stage used in general air. The stage with the same structure (the stage of the static pressure shaft 3 without the differential exhaust mechanism and the stage of the branch) can handle the stable charged particle beam on the sample on the stage. The influence of the degree of vacuum on the field of charged particle beam irradiation can be minimized, and the sample processing performed by the charged particle beam can be stabilized. (3) A highly accurate stage positioning can be provided at a relatively low price. Function 'at the same time stable The inspection equipment for the vacuum degree of the electric beam irradiation area. (4) It can provide a high-precision positioning function of the printed platform of the Intellectual Property Bureau of the Ministry of Economic Affairs of the Ministry of Economic Affairs, and can stabilize the charged beam irradiation. An exposure device for vacuum in a region. (5) A semiconductor device can be fabricated by a device having a high-precision stage positioning function and a vacuum degree in a charged particle beam irradiation region, thereby forming a fine semiconductor circuit. Ten inventions apply to the Chinese National Standard (CNS) A4 specification _(210 X 297 public i&quot; 1286776 in a paper that irradiates any object with charged particles or electromagnetic waves to the inspection object and then inspects the inspection object. A7 B7 V. Inventive Description (38) The inspection method is characterized in that: a control chamber that can be controlled in a vacuum state and inspects an inspection object; and any one of charged particles or electromagnetic waves is formed into a light beam a light beam generating mechanism that guides and illuminates the inspection object held in the working chamber to detect the object to be inspected The second charged particle is guided to the electron optical system of the image processing system; the image processing system for forming an image by the secondary charged particle; and the information of the state information of the inspection object is displayed and/or memorized according to the output of the image processing system a processing system; and a stage device that maintains an inspection target that can move relative to the light beam, and detects the position of the inspection object to correctly align the light beam with the inspection target, and deflects the light beam to the detected inspection object a desired position, by irradiating the desired position of the surface of the inspection target with the light beam, detecting secondary charged particles generated by the inspection target, and forming an image by the secondary charged particles, according to the image processing system Output, display, and/or memorize the status information of the inspection object. Brief description of the picture ----------1 Pack---- (Please read the notes on the back and fill out this page) Order ·· Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed this paper The scale applies to China (4) Standard (CNS) A4 specification (21〇X 297 public hair) 38 312767 1286776 A7 B7 V. Description of invention (39) Fig. 1 is a perspective view showing the main components of the inspection apparatus of the present invention. A view taken along line AA of Figure 2. (Please read the phonetic transcription on the back side and then fill out this page.) Figure 2A is a top view of the main components of the inspection equipment shown in Fig. 1. It is a view taken along line B-B of Fig. 1. Fig. 2B is a schematic cross-sectional view showing another embodiment of the substrate carrying apparatus of the present invention. Fig. 3 is a cross-sectional view showing the small environment device of Fig. i, which is a view taken along line C-C. Figure 4 shows the first! The loader chamber diagram of the figure is a view taken along line D-D of Fig. 2. Fig. 5 is an enlarged view of the wafer holder, [A] is a side view, and [b] is a cross-sectional view taken along the line E-E of [A]. Fig. 6 is a view showing a modification of the main casing supporting method. Fig. 7 is a view showing a modification of the main casing supporting method.

Fig. 8 is a schematic view showing the configuration of an electro-optical device of the inspection apparatus of Fig. 1. Fig. 9 is a cross-sectional view showing the structure of the electron beam deflecting portion of the exb separator. Fig. 10 is a cross-sectional view taken along line A-A of Fig. 9. Figure 11 is a view showing the overall configuration of an apparatus according to an embodiment of the present invention. Fig. 12 is a perspective view of the electrode showing a perspective view of the electrode in a cylindrical shape in an axisymmetric manner. Figure 13 is a perspective view of the electrode showing that the electrode is in axisymmetric manner and is applicable to the Chinese National Standard (CNS) A4 specification (21〇X 297 mm). 39 312767 1286776 Printed by the Intellectual Property Office of the Ministry of Economic Affairs A7 ___B7_____ V. Description of invention (4〇) Oblique view of the current disc shape. Figure 14 is a graph showing the voltage distribution between the wafer and the objective lens. Fig. 15 is a flow chart showing the secondary electron detecting operation of the electronic wire device. Figure 16 is a cross-sectional view of the weir separator of the present invention. Figure 17 is a diagram showing the electric field distribution of the helium separator of the present invention. Fig. 18 is a schematic block diagram showing an important part of an embodiment of the charging device of the present invention. Fig. 19 is a view showing a schematic configuration of another embodiment of the charging device. Fig. 20 is a view showing a schematic configuration of another embodiment of the charging device. Fig. 21 is a view showing a schematic configuration of another embodiment of the charging device. Fig. 22 is a view showing an embodiment of an image pickup apparatus of the present invention. Fig. 23 is a timing chart showing the operation of equalizing or lowering the charge charged by the object of the image pickup apparatus of Fig. 22. Fig. 24 is a schematic block diagram showing a defect inspection apparatus including a charging device according to another embodiment of the present invention. Fig. 25 is a schematic configuration diagram of a defect inspection apparatus including a charging device according to another embodiment of the present invention. Figure 26 is a diagram showing the charging associated with another embodiment of the present invention (please read the back of the page and then fill out this page). ιδτ- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 public) 40 312767 1286776 A7 B7 V. OBJECT DESCRIPTION OF THE INVENTION (") A schematic diagram of the defect inspection equipment of the device. (Please read the precautions on the back and fill out this page.) Figure 27 is a flow chart showing the wafer inspection process for the inspection equipment that is related to the embodiment of Fig. 24 to Fig. 26. Fig. 28 is a view showing a specific example of a wafer defect detecting method for the defect inspection apparatus relating to the embodiment of Figs. 24 to 26, (A) showing pattern defect detection, and (B) displaying line width detection, (c) Display potential comparison detection. Figure 29 is a display diagram of the potential application mechanism. Figure 30 is an explanatory view of the electron beam calibration mechanism, [a] is a side view, and [b] is a plan view. Fig. 3 is a schematic explanatory diagram of the wafer calibration control device. Fig. 32 is a view showing the vacuum chamber and the XY stage of the embodiment of the charged beam device of the present invention, wherein [A] is a front view and [b] is a side view. Figure 33 is a view showing the vacuum chamber and the XY stage of another embodiment of the charged beam device of the present invention. Fig. 34 is a view showing the vacuum chamber and the XY stage of another embodiment of the charged beam apparatus of the present invention. Printed by the Ministry of Economic Affairs, the Intellectual Property Office, and the Consumer Cooperatives. Fig. 35 is a view showing the vacuum chamber and the XY stage of another embodiment of the charged beam device of the present invention. Fig. 36 is a view showing the vacuum chamber and the XY stage of still another embodiment of the charged beam device of the present invention. Fig. 37 is a view showing the vacuum chamber and the XY stage of the embodiment of the charged beam device of the present invention. Figure 38 is the actuating and exhausting mechanism installed in the equipment shown in Figure 37. The paper size applies to the Chinese National Standard (CNS) A4 specification (2) Q χ tearing public love) 41 312767 ^86776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing A7 B7 V. Description of the invention (42) A diagram showing an example. Fig. 39 is a view showing the gas circulation piping system of the apparatus shown in Fig. 37. Fig. 40 is a schematic view showing an example of an optical system and a detection system installed in the lens barrel. Fig. 41 is a view showing the schematic configuration of a defect inspection apparatus according to a modification of the present invention. Fig. 42 is a view showing an example of a plurality of images to be inspected and a reference image obtained by the defect inspection device shown in Fig. 41; Fig. 43 is a flow chart showing the main routine of the wafer inspection of the defect inspection apparatus shown in Fig. 41. Fig. 44 is a detailed flow chart showing the subroutine of the process of obtaining the plurality of checked image data (step 1304) shown in Fig. 43. Figure 45 is a detailed flow chart of the subroutine of the process (step 1308) of the comparison process of Figure 43. Fig. 46 is a view showing a concrete configuration example of the detector of the defect inspection apparatus shown in Fig. 41. Fig. 47 is a conceptual diagram showing a plurality of inspected regions which are partially overlapped and misaligned on the surface of the semiconductor wafer. Fig. 48A is a schematic view showing an electron beam apparatus according to another embodiment of the present invention. Fig. 48B is a schematic plan view showing a state in which a sample is scanned by using a plurality of primary electron lines in the embodiment shown in Fig. 48A. Fig. 49A is a more detailed explanatory diagram of the embodiment of Fig. 48A. -----------^--------Book--------- (Please read the notes on the back and fill in this page) This paper scale applies to Chinese national standards. (CNS) A4 specification (210 X 297 mm) 42 312767 1286776 A7 B7 V. Description of the invention (43) Fig. 49B is a view for explaining a method of irradiating a primary electron beam in the same embodiment. Fig. 50 is a flow chart showing an embodiment of a method of manufacturing a semiconductor device of the present invention. Fig. 51(A) is a flow chart showing the process of forming a microfilm step of the wafer process core shown in Fig. 5. Fig. 52 is a view showing an outline of an example of a map projection type electron beam inspection apparatus. Figure 53 is a dynamic diagram showing the secondary electrons released by the rectangular region. Fig. 54 is a view showing the electric field distribution of the conventional helium separator. Fig. 55 is a view showing the vacuum chamber and the χγ stage of the conventional charged beam device, [Α] is a front view, and [β] is a side view. Fig. 56 is a view showing the relationship between the hydrostatic bearing and the differential exhaust mechanism used in the crucible stage of Fig. 1.袢 Symbol Description Semiconductor Inspection 僙-----------^--------^--------- (Please read the notes on the back and fill out this page) Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1 Semiconductor inspection equipment 10 Wafer truss 20 Small environmental installation 30 Main housing 40 Loading chamber 50 Stage device 60 Loader This paper scale applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 43 312767 1286776 A7 B7 V. INSTRUCTIONS (44) Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Print 70 Electro-optical device 81 Pre-charging device 83 Potential application mechanism 85 Electron beam calibration mechanism 87 Calibration control device 871 Optical microscope wafer truss C cassette W substrate 11 lifting stage 12 lifting mechanism 24 substrate transfer box 501 box main body 502 substrate loading and unloading door 503 cover body 505 ULPA filter 506 chemical filter 507 fan motor 612 first conveying device Small environmental device 21 Small environmental space 22 Housing 23 Gas circulation device 24 Discharge device 25 Pre-aligner (please read the notes on the back and fill in this page) Binding · This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 44 312767 1286776 A7 B7 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed V. Inventions (45) 221 222 223 225 231 232 233 234 &gt; 244 241 242 Main housing 2 31 32 33 36 37 321 322 323 325 331 Loading chamber W 27 ' 45 ' 46 Top wall bottom wall Peripheral wall inlet and outlet gas supply recovery conduit conduit Catheter suction duct Fan control device housing shell Main body support device gantry anti-shock device bottom wall top wall peripheral wall entrance and exit frame structure wafer shielding device (please read the back note first and then fill in this page) Binding·· This paper scale applies China National Standard (CNS) A4 specification (210 X 297 mm) 45 312767 1286776 A7 B7 V. INSTRUCTIONS (46) Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed Clothing 41 First Load Chamber 42 Second Load Chamber 43 Shell Body 47 Wafer Holder 226 ^ 435 , 436, 437 entrance 271, 451 sealing material 272 &gt; 452 &gt; 461 door 273 &gt; 453 drive unit 421 bottom wall 422 top Wall 423 Peripheral wall 433 Peripheral wall 434 Partition wall 471 Substrate 472 Pillar 473, 474 Support stage device 51 Fixing table 52 Y stage 53 X stage 54 Rotary table 55 Support frame 521, 531 Servo motor 522 ^ 532 Decoder 551 Wafer Mounting surface (please read the notes on the back and fill out this page) -· I n I inni^-rof nn ϋ ϋ ϋ nn &lt; This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ) 46 312767 1286776 A7 B7 --------------------^---------^9. (Please read the notes on the back and fill out this section) Page) Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperatives Printing V. Inventions (47) Loader 01-01 47 61 63 611 612 613 615 616 Wafer transfer 02-02

AB, C 32a v 32b 33a, 33b 3 6b 37b 40b 49b 321a, 321b 331a 336b 337b 435 Axis wafer receiver first conveying device second conveying device driving unit multi-section manipulator shaft lifting mechanism handling device rotation axis processing completed Wafer unprocessed wafer shell main body support device stand shockproof device load chamber suspension member bottom wall rectangular steel plate frame structure plural vertical frame aperture paper size applicable to China National Standard (CNS) A4 specification (210 X 297 PCT) 47 312767 1286776 A7 B7 V. INSTRUCTIONS (48) Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 632 Robotic Electron Optical Device CL, PL, TL Electrostatic Lens 71 Lens Tube 72 Primary Electron Optics 74 Secondary Electron Optics Department 76 Detection system 721 Electron gun 722 Lens system 723 ExB separator 724 Objective lens system 725 Electrode 726 Power supply 741 Lens system 761 Detection system 761a Target plate 763 Image processing unit ExB device (Wiener filter) 42 Magnetic circuit 711a, 711b Electronics Beam 712 electron 712a &gt; 712b secondary electron 723 electron beam deflecting portion 723-1, electrode 723-2 (Please read the note on the back and fill out this page.) This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 48 312767 1286776 A7 B7

V. Invention description (49) 723 7723-2a 723a to d B e EV electromagnetic coil control part magnetic field electric load electric field electronic speed detector 723 t ExB type deflector economic department intellectual property bureau employee consumption cooperative printing b through body Main functional relationship of mapping projection method and overall image description 32 Processing chamber 56 71 - 1 Stage driving mechanism Primary column 71-2 Secondary column 71a Primary column control device 71b Secondary column control device 724 Cathode lens 741 -1 2nd lens 741-2 3rd lens 741 - 3 4th lens 780 Control device 781 CPU FB Magnetic field power FE Electric field power This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) --- -----1—Installation--------Book--------- (Please read the notes on the back and fill out this page) 49 312767 1286776 A7 B7 V. Invention Description (5G ) Ministry of Economic Affairs Intellectual Property Bureau Staff Consumption Cooperative Printed NA-2 Number of openings NA-3 Field opening diameter W Sample electrode 721 Electronic line source ExB separator 701 to 708 Electrode 709, 710 Permanent magnet 711 Magnetic flux circuit 712 Protrusion 713 Electrode Support Cartridge 714 Parallel groove 715 Conductor 716 Light extraction pre-charging device W Sample substrate wafer 13 Power supply 32 Sample chamber 322 Sample chamber 711 Primary electron beam 721 &gt; 722 Electron beam irradiation mechanism 723 ExB polarizer 751 Light signal scintillator and micro Combination of channel board -----------Install---------Set--------- (Please read the note on the back and fill in this page) Paper The scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 50 312767 1286776 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed clothing (please read the note on the back and fill out this page) V. Invention Description (51) 762 7 63 770 771 772 773 774 811 815 816 &gt; 817 818 819 820 821 823 824 825 826 827 &gt; 822 828 829 830 831 832 840

CCD image processing device detector multi-channel plate fluorescent surface relay optical system imaging sensor charged particle irradiation part inspection area area charged particles charged particle line source bias power supply hot filament wire electronic power supply lead-out electrode electronic wire shield cover filament power anode ion

Ar gas conduit plasma charge control mechanism This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 51 312767 1286776 A7 B7 V. Invention description (52) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative print 841 Electrode 842 switch 843, 845 terminal 844, 848 voltage generator 846 charge detector 847 gate 849 timing signal generator 1008 memory area 1009 defect detection program 1014 control unit body 1015 CRT 1016 control unit 1017 secondary electronic image 1018 input Part 1110 Photoelectron discharge material 1110b Photoelectron emission plate lilt UV lamp holder 1112 Transparent window material 1113 Power supply 1231, ^ 1232 Grain image 1234 Actual pattern 1236 Actual secondary electron intensity signal 1237 or level 1238 Width 1239 Electrode ----- -----Install--------Book--------- (Please read the note on the back and fill in this page) This paper scale applies to China National Standard (CNS) A4 specification ( 210 X 297 mm) 52 312767 1286776 A7 B7 -----------Install--------Book--------- (Please read the notes on the back first) Write this page) Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 5, Invention Description (53) 1240 1241, 1242 1243, 1244 Potential Application Mechanism 541 763 831 832 833 834 835 Electron Beam Calibration Mechanism 851 &gt; 852 Calibration Control Device 872 &gt; 761 873 , 765 04-04

Stage device modification C

W 72 91-1 , 91-2 90 , 909a , 909b ' 911a , 911b , 910a , 910b 93 &gt; 97 Potential Barrier Pattern Equivalent Mounting Surface Image Forming Section Voltage Application Packing Charge Survey and Voltage Determination System Monitor Processing Device

CPU Faraday Cup

CCD monitor optical axis processing room sample charged beam irradiation part vacuum exhaust passage static pressure axis carrier table paper size applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 53 312767 1286776 A7 B7 V. Invention description (54 94-1 94 94 95 96 96a ^ 97a 98 721 723-2 723-1 730 760 906 907a &gt; 907b 908a ^ 908b 910 &gt; 923 &gt; 919 912 , 914 , 916 913 , 915 917 , 918 ' 925 Connection Member sample table, sample table, Y-direction movable portion, X-direction movable portion, guide surface, housing, electron gun, magnet electrode deflector, optical system, electric pedestal, direction guide, X-direction guide, vacuum piping, partition, internal space, differential table Air Ditch-----------Install--------Set--------- (Please read the notes on the back and fill out this page) Ministry of Economic Affairs Intellectual Property Bureau Employees' consumption cooperatives print 919, 920a, 920b, 928, exhaust 710 920 circumferential groove 921 exhaust passage 922 internal space This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 54 312767 1286776 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employees Printed by the cooperative (please read the note on the back and fill out this page) 5. Invention description (55) 924 926 927 928 &gt; 710 929 930 931 , 934 , 921 , 922 932 , 933 950 ^ 951 951 , 952 952 940 953 954 960 961 , 962 963 970 to 975, 920a ' 920b 976 to 980 Inspection device variants wi

Di 56 1011 Space ring member Annular groove member Support member Freezer charged beam irradiation space Flexible hose Linear motor gate Turbo Molecular Lei small gap Dry vacuum Lei compressor Filter regulator High purity Inactive gas supply system Vacuum piping plus Pressure side piping wafer image number distance value Camera sensor deflection electrode This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 55 312767 1286776 A7 V. Invention description (56) 1012 1013 1030 1030a 1032 1032a 1032b 1032k 1034 Electronic grab (electronic line source) 711 711-1 to 711-4 711a 712 713 Deviation controller reference image memory unit Wafer inspection pattern Image inspection area Image inspection area Rectangular area Inspection image area Wafer inspection surface Multi-beam electron line primary electron line secondary electron line field of view 724, 722-1, 722-2, 724 • Lens 741-1, 741-2 ------------------ ---^---------- {Please read the notes on the back and fill out this page.) Printed by the Intellectual Property Office of the Ministry of Economic Affairs

724-2 762 765 767 W objective lens TDI-CCD image display unit MCP sample material preferred embodiment of the present invention will be described below with reference to the drawings, and a substrate on which a pattern is to be formed, that is, a wafer, will be described. The paper size to be inspected is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public) 31276? 1286776 A7 B7_ — '-·_ one ~—— ___- one five, invention description (57) semiconductor Check the equipment. (Please read the precautions on the back and fill out this page.) In the first and second figures, the main components of the semiconductor inspection equipment 1 of the present embodiment are shown in a perspective view and a plan view. The semiconductor inspection device 1 of the present embodiment includes a cassetu holder 10 for holding a cassette containing a plurality of wafers, a minienvironment device 20, and a cutting studio (working The main housing 30 of the chamber is disposed between the small environment device 20 and the main housing 30, and divides the loading chambers of the two loading chambers 40; the wafer is filled by the wafer truss 1 a loader 6 to a stage device 50 disposed in the main casing 3; and an electro-optical device 70 mounted in the vacuum casing, the devices being the first And the positional relationship shown in Fig. 2 is arranged. Further, the semiconductor inspection apparatus 1 further includes: a precharge unit 81 disposed in the vacuum main casing 30; a potential application mechanism 83 for applying a potential to the wafer (as shown in FIG. 29); electron beam calibration Mechanism 85 (shown in Figure 30); and an optical microscope 871 that forms an alignment control device 87 for wafer positioning on the stage device. Wafer truss Ministry of Economics, Intellectual Property Office, Staff Consumer Cooperative, Printed S-frame 10, which is used to hold a plurality of (two in this embodiment) parallel arrays in the lower direction (for example, 25 pieces) An eassette c stored in a state of a wafer (for example, a closed cassette of SMIF or FOUP manufactured by ASIST). In terms of wafer truss, the following two types of trusses can be arbitrarily selected: one is a truss that can be transported by a robot or the like and automatically loaded onto a wafer truss; Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 57 312767 1286776 A7 B7 V. Invention description (58) (Please read the phonetic note on the back side and then fill out this page) The manual can be loaded manually. Open truss. In the embodiment, the cassette C can be automatically loaded, for example, including a lifting stage 1^; and a lifting mechanism 12 for moving the lifting stage 11 up and down, and the cassette e is in FIG. 2A. The state of the chain line diagram can be automatically mounted on the lifting stage' and after the installation, in the state shown by the solid line in FIG. 2A, the moving is performed to the first conveying device in the small environment device. Rotate the axis. Further, the "lifting stage" is lowered in the state shown by the chain diagram of the i-th figure. Such a 'wafer truss used in automatic loading, or a wafer truss used when manually loaded" is a well-known structure and can be suitably used, and therefore, its structure and function are omitted. Its detailed description. In other embodiments, as shown in FIG. 2B, a plurality of 3 mm substrates are housed in a grooved bag (not shown) fixed to the inside of the case main body 501. , carry out the 'transfer, storage, etc. The substrate transfer case 24 is connected to the corner cylindrical case main body 501 and the substrate carry-out automatic switch device, and the substrate is carried out by the opening of the side surface of the mechanical switchable box main body 501; the opening is located on the opposite side of the opening. Position and cover cover 5's for carrying out the opening of the filter and the fan motor; groove type bag (not shown) for holding the substrate w; ULPA filter 5〇5; chemical filter 5〇6; and fan motor 507 and so on. In this embodiment, the robot type second transport device 612 of the loader 60 carries out/loads the substrate. Further, the substrate stored in the cassette c, that is, the wafer, is a wafer to be inspected, and such inspection is performed after or during the wafer processing in the semiconductor manufacturing process. Specifically, accepting the enamel process, CMP, and the paper size standard (CNS) A4 specification (2) g χ tearing public meal) 58 312767 1286776 A7 V. Invention description (59) &lt;Read the phonetic transcription on the back ? In addition, the substrate, that is, the wafer, the wafer on which the wiring pattern is formed on the surface, or the wafer on which the wiring pattern is not formed, is housed in the cassette. Since the wafers accommodated in the cassette C are arranged side by side in a plurality of vertical and horizontal directions, the wafers in any position can be held by the first transfer device described later, and the first transfer can be moved up and down. The robotic arm of the device. Environment Mounting In Figures 1 to 3, the small-sized environmental device 20 is provided with a casing 22 that can be divided into a small environmental space 21 controlled by air; for controlling air in the small environmental space 21, a gas circulation device 23 for circulating a gas of a quiet air; a discharge device 24 for collecting and discharging a part of the empty fluorine supplied into the small-sized environmental space 21; and a substrate to be inspected in the small-sized environmental space 21, that is, a substrate to be inspected A pre-aligner 25 that is substantially positioned by the wafer. The housing of the Intellectual Property Office of the Ministry of Economic Affairs, the consumer consortium, has a top wall 221, a bottom wall 222, and a peripheral wall 223 surrounding the periphery, forming a structure in which the small environmental space 21 can be interrupted by the outside. In order to control the air in a small environmental space, as shown in Fig. 3, the gas circulation device 23 is installed on the top wall 22 i in the small environmental space 2 j, and the device is provided with: a clean gas (in this case) In the embodiment, the air is supplied to the gas supply device 231 which flows through the one or more gas discharge ports (not shown) so as to flow vertically downward; and is disposed in a small environmental space. On the bottom wall 222, a recovery duct 232 for recovering the air flowing toward the bottom, and a duct 233 for connecting the recovery duct 232 and the gas supply device 231 to return the recovered air to the gas supply device 2^1. In this embodiment, from the outside of the casing 22, the private paper scale of the gas supply equipment is applied to the Chinese National Standard (CNS) A4 f (2) 〇 x 297 public) _ 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 -- ---- B7_ V. INSTRUCTIONS (60) 231 About 20% of the air is supplied for cleaning, and the proportion of the gas introduced from the outside can be arbitrarily selected. The gas supply device 23A has a HEPA or ULPA filter having a known structure for producing clean air. In the flow direction below the laminar flow of the clean air, that is, downstream, the flow is mainly supplied by the transfer surface formed by the first transfer device, which will be described later, in the small-sized environmental space 21 to prevent the possibility of being caused by the transport device. The dust adheres to the wafer. Therefore, the outlet of the downstream nozzle does not need to be installed as close to the top wall as shown in the figure ’. It is only necessary to be above the conveying surface formed by the conveying device. In addition, there is no need to allow empty milk to be fully circulated in a small environmental space. In addition, ion wind can be used as clean air depending on the situation to ensure cleanliness. In addition, a sensor for observing the cleanness is provided in a small environmental space, and the device can be stopped when the cleanliness is deteriorated. An inlet and outlet 225 is formed in a portion of the peripheral wall 223 of the casing 22 adjacent to the crystal frame E. A shielding device having a known structure is provided near the entrance and exit 225, and the entrance and exit 225 can also be closed by the small environment device side. The flow rate downstream of the laminar flow formed near the wafer can be set, for example, to 0.3 to 0.4 m/sec. The gas supply means may be provided not on the outside of the small environmental space. The discharge device 24 includes a suction duct 241 disposed below the transfer device at a position below the wafer transfer surface of the transfer device, a fan 242 disposed outside the wafer 22, and a suction duct 241 connected thereto. The conduit 243 of the fan 242. The discharge device 24 sucks the dust-containing gas that may flow through the conveyance device around the conveyance device by the suction pipe 241, and discharges it to the outside of the casing 22 via the pipes 243 and 244 and the fan 242. It can also be discharged to the size of the paper placed near the casing 22. The Chinese National Standard (CNS) A4 specification (210x 297 mm) 60 312767 — — — — — — — — — — — — — — — ---^-----I---. (Please read the notes on the back and fill out this page) 1286776 A7 —---_ — V. Description of invention (61) Trachea (not shown). The aligner 25 disposed in the small-sized environment space 21 optically or mechanically detects an orientation plane formed on the wafer (a flat portion # formed on the outer circumference of the circular wafer, hereinafter referred to as a positioning plane), or is formed. One or more V-shaped notches, that is, grooves, on the outer circumference of the granule, and the position of the rotation direction around the wafer axis 〇_〇 is predetermined with an accuracy of about 1 degree. The pre-aligner constitutes a part of a mechanism for determining the coordinates of the inspection object of the invention described in the patent application to substantially locate the inspection object. The pre-aligner body may be any known structure, and its structure and operation description will be omitted. Further, although not shown, a recovery duct for the discharge device may be provided under the pre-aligner to discharge the dust-containing air discharged from the pre-aligner to the outside. In the first and second figures, the main casing 30 divided into the working chamber 31 is provided with a casing main body 32 which is a shock blocking device disposed on the gantry 36, that is, shockproof. Supported by the housing support device 33 mounted on the device 37. The casing supporting device 33 is provided with a frame structure 331 which is assembled in a rectangular shape. The casing main body 32 is fixedly mounted on the frame structure 33, and includes a bottom wall 321 placed on the frame structure, a top wall 322, and a peripheral wall connected to the bottom wall 321 and the top wall 322 to surround the garden. 323, from the external isolation studio 31. In this embodiment, the bottom wall 321 is formed of a steel plate having a relatively large thickness to avoid deformation due to the weighting of a device such as a stage device placed thereon, and may of course have other structures. In this embodiment, (please read the precautions on the back and then fill out this page). Installation--------• ------ Department of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative, Printed Paper Size China National Standard (CNS) A4 Specification (210 X 297 mm) 61 312767 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 B7 V. Invention Description (62) Shell body 32 and housing support device 33, The composition is constructed, and the vibration generated by the anti-shock device 37 blocking the floor provided with the gantry 36 is transmitted to the rigid structure. In the peripheral wall 323 of the case main body 32, an inlet and outlet 325 for wafer insertion is formed on a peripheral wall adjacent to a loading chamber to be described later. Further, the 'anti-shock device may be an automatic device having an air spring, a magnetic bearing' or a passive device having an air spring and a magnetic bearing. Since both are well-known structures, the description of their own construction and function is omitted. The working chamber 3 is held in a vacuum gas by a vacuum device (not shown) of a known construction. Below the gantry 36, a control device 2 that can control the overall operation of the device is disposed. Loading chamber In the second, second and fourth figures, the loading chamber 40 is provided with a casing main body 43 which is divided into a first loading chamber 41 and a second loading chamber 42. The shell body 43 has a bottom wall 431, a top wall 432, a peripheral wall 433 surrounding the periphery, and a partition wall 434 for partitioning the first loading chamber 41 from the second loading chamber 42, which can isolate the two loading chambers from the outside. An opening for the wafer pick-and-place between the two loading chambers, i.e., the inlet and outlet 435, is formed in the partition wall 434, and the inlet and outlet portions 436 and 437 are formed in a portion of the small environmental device adjacent to the peripheral wall 433 and the main casing. The casing main body 43 of the loading chamber 40 is placed on and supported by the frame structure 331 of the casing supporting device 33. Therefore, the vibration of the floor is not transmitted to the loading chamber 40. The inlet and outlet 436 of the loading chamber 40 is integrated with the inlet and outlet 226 of the casing 22 of the small-sized environmental device, and a shielding device 27 is provided therein for selectively blocking the communication between the small environmental space 21 and the first loading chamber 41. The shielding device 27 has: ------------Install----------Book---------^9 &lt;Jingxian reading the back of the note Fill in this page again. This paper scale applies to China National Standard (CNS) A4 specification (210 χ 297 public Chu 61 312767 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1286776 V. Invention description (circumference around the entrances and exits 226 and 436, with a sealing member 271 in which the side wall 433 is in close contact with and fixed; a door 272 that cooperates with the sealing member 271 to prevent air from flowing through the inlet; and a driving device 273 that can move the door. The inlet and outlet 436 and the housing of the loading chamber 40 The inlet and outlet 325 of the main body 32 are integrated together and a shielding device 45 for selectively blocking the communication between the second loading chamber 42 and the working chamber 31 is disposed therein. The shielding device 45 has a surrounding area 437 and 325. a door 452 that is fixed in close contact with the side walls 433 and 323 and a sealing material 451; a door 452 that cooperates with the sealing member 451 to prevent air from flowing through the inlet and outlet; and a driving device 453 that can move the door. In the opening of the partition wall 434, the opening α is closed by the door 461, and is selectively A shielding device 46 that blocks the communication between the first and second loading chambers 42. The shielding devices 27, 45, and 46 can perform air-filling de-closing of the respective chambers in a closed state. The structure and the operation are omitted. In addition, the support method of the housing 22 of the small environment device 2 is different from the support method of the load chamber, in order to prevent the vibration from the ground by the small environment device. It is preferably transmitted to the loading chamber 40 and the main casing 30, and it is preferable to arrange a shock-absorbing cushioning material that can surround the inlet and outlet in an airtight manner between the casing 22 and the loading chamber 40. The first loading chamber 41 is provided with the lower partition. In the horizontal state support plural (two in the present embodiment), the wafer holder 47 of the wafer. As shown in FIG. 5, the wafer holder 47 is provided with the wafer holder 47 fixed at four corners of the rectangular substrate 471 in an upright state. In each of the pillars 472, two support portions 473 and 474 are formed, and the periphery of the wafer w is mounted and held on the support portion. Then, the front end of the arm of the first and second transfer devices will be described later.丨丨丨丨—丨丨— •丨丨-丨丨丨-订·丨丨丨丨丨丨丨· . (Please read the notes on the back and fill out this page.) This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 63 312767 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1286776 A7 -----------____ V. Invention Description (64) ^^ Adjacent pillars approaching the wafer, controlled by robotic arm The wafer loading chambers 41 and 42 are subjected to a vacuum apparatus (not shown) including a vacuum pump (not shown), and are capable of receiving a gas under a high vacuum (vacuum degree of 10-5 to 10-6 Pa). The form of control. At this time, will be the first! Adding: the chamber 41 is maintained as a low vacuum chamber as a low vacuum chamber, and the second processing chamber 42 is maintained as a high vacuum chamber in a high vacuum gas, thereby effectively preventing contamination of the wafer by employing the The wafer stored in the loading chamber for defect inspection can be quickly transferred to the work chamber. By using the loading chamber, the principle of the multi-beam type electronic device and the throughput of the defect inspection described later can be simultaneously increased, and the degree of vacuum around the electron source in which the storage state must be in a high vacuum state is required to be maintained as high as possible. Under vacuum. Each of the first and second loading chambers 41 and 42 is connected to a vacuum exhaust pipe and an inert gas (e.g., dry pure nitrogen) by a vent pipe (both not shown). Thereby, the atmospheric pressure state in each of the loading chambers can be achieved by the delivery of an inert gas (injecting an inert gas to prevent the gas other than the inert gas from adhering to the surface). Such a device for performing inert gas transport is itself a well-known structure, and detailed description thereof will be omitted. In addition, in the inspection apparatus of the present invention using an electron beam, a representative lanthanum hexaboride (LaB6) used as an electron source of an electron optical system to be described later is heated to a high temperature state in which hot electrons can be emitted at one time, and is an extended life. The contact with oxygen should be avoided as much as possible, and the gas can be controlled by the gas control as described above before the wafer is loaded into the working chamber where the electro-optical system is placed. Stage Mounting I— I 11 ---------^---I----I 请Please read the notes on the back and fill out this page.) This paper scale applies to Chinese national standards (Cns A4 size (210 X 297 mm) 64 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7

I Please read the back of the note first S· I

Page I έ 1286776 A7 —— -----—— R7___ V. Description of invention (66) ~ Ming. Similarly, the above-described laser interference distance measuring device may be any known structure, and detailed descriptions of its structure and operation will be omitted. (Please read the phonetic transcription on the back side and then fill out this page) ^ can be benchmarked by inputting the position of the wafer corresponding to the electron beam or by inputting the X and Y positions to the signal detection system or image processing system described later. . Furthermore, the wafer clamping mechanism provided on the support frame can supply the voltage for clamping the wafer to the electrostatic clamping electrode and press the three points of the outer peripheral portion of the wafer (ideally equidistant in the circumferential direction). Separated) to locate. The wafer refreshing mechanism has two fixed positioning pins and one pressing &lt; crank pin. The crank pin enables automatic gripping and automatic release and forms the conduction point for the applied voltage. In the present embodiment, the table moving in the left-right direction in the second drawing is referred to as the X stage, and the stage moving in the vertical direction is referred to as the Y stage. However, the table moving in the left-right direction in the figure may be used. As a platform, the station that moves in the up and down direction is used as the X station. The loader loader 60 includes a robot-type first transport device 61 that is disposed in the casing 22 of the small-sized environment device 2; and a robot-type second transport that is printed by the Ministry of Economy, Intellectual Property Office, and the employee consumption cooperative. Device 63. The first conveying device 61 has a multi-section robot arm 612 that is rotatable around the axis in relation to the driving portion 611. In the case of a multi-section robot arm, any structure can be used. However, in the present embodiment, the robot arm has three parts that are coupled to each other so as to be rotatable. A part of the robot arm 612 of the first conveying device 61, that is, the i-th portion closest to the side of the driving portion 611 is a flag (10) X 297 in the paper scale by a drive mechanism of a known configuration installed in the driving portion 611. 66) 312767 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 B7 V. Invention Description (67) Show) 'Installed on a rotatable shaft (1). The robot arm 612 is rotatable about the axis cV 〇 1 by the shaft 613, and can be expanded and contracted in the radial direction by the relative rotation between the respective portions, corresponding to the axis 〇1-〇1 as a whole. At the front end of the third portion which is farthest from the shaft 613 of the robot arm 612, a gripping device 616 for holding a wafer such as a mechanical grip or a static refresher of a known structure is provided. The drive unit can be moved in the vertical direction by the elevating mechanism 615 having a known structure. In the first conveying device 61, the robot arm 612 extends out of the arm toward the direction Μι or M2 of either of the two cards Ec held on the wafer E frame, and accommodates the card in the card E e The wafer is placed on the arm or gripped by a gripping mechanism (not shown) attached to the front end of the arm. Thereafter, the arm (as shown in Fig. 2) is shortened so as to be rotated toward the position M3 extending in the direction of the pre-aligner 25, and the operation is stopped at this position. Next, the robot arm is again extended, and the wafer held in the robot arm is placed on the pre-aligner 25. Contrary to the foregoing, the mechanical arm is further rotated after receiving the wafer from the pre-aligner, and is stopped at a position (direction M4) extendable to the second loading chamber 41 to place the wafer into the second loading chamber 41. Wafer receiver 47. Further, when the wafer is mechanically held, the peripheral portion of the s曰 circle (a range of about 5 mm from the peripheral edge) is held. It mainly forms a device (circuit wiring) on the wafer except for the peripheral portion, and if the portion is held, device damage and defects occur. The second conveying device 63 is basically the same in structure as the second conveying device. The difference between the wafer holder 47 and the mounting surface of the stage device is different, and therefore detailed description thereof will be omitted. Next day

^用过过中国国家鲜X 29TW 312767 ---------------------ilri---1--- (Please read the notes on the back and fill in Page 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 The cassette held in the wafer truss is transported to the stage device 50 disposed in the working chamber 31 and the reverse wafer transfer, and the robot arm of the transfer device is only for taking out the wafer from the cassette and Insertion; loading and unloading the wafer onto and from the wafer holder; and moving the wafer up and down when it is placed on and removed from the stage device. Therefore, even a large wafer, such as a wafer having a diameter of 30 cm, can move smoothly. Wafer Handling Next, the process of transporting the wafer from the card s supported by the wafer truss to the stage device 5 disposed in the working chamber 31 will be described in order. The wafer truss 10 has a configuration suitable for each case as described above in the case where the cassette is manually mounted, or in the case where the cassette is automatically mounted. In the present embodiment, when the cassette c is attached to the elevating table 11 of the wafer truss, the elevating table 11 is lowered by the elevating mechanism 12, and the cassette c is integrated with the inlet and outlet 225. After the card He is integrated with the door 225, the cover (not shown) provided in the cassette will be opened, or a cylindrical cover will be arranged between the cassette c and the entrance and exit 225 of the small environment, and the rain will be inside and small. Inside the environmental space, it is interrupted from the outside. Since these structures are well-known structures, detailed descriptions of their construction and operation are omitted. Further, when the small environment device 20 is provided with a shielding device that can switch the door 225, the shielding device generates an action to open the door 225. On the other hand, the robot arm 612 of the first conveying device 61 is stopped in the direction of either the direction M1 or M2 (in the description of the Μι direction), and the paper size is applied to the Chinese National Standard (CNS) A4 specification (210). X 297 mm) ------1——丨装—I—订--------- (Please read the notes on the back and fill out this page) 1286776 Ministry of Economic Affairs Intellectual Property Office staff consumption Cooperatives Print A7 V. Inventions (69) f When the entrance and exit are opened, the arm will extend to the front and take out one of the wafers contained in the card. Further, in the present embodiment, the positional adjustment of the robot arm and the wafer taken out by the cassette is performed by the vertical movement of the drive unit 611 and the robot arm 612 of the transport device 61, but the wafer may be used. The up and down movement of the gantry's lifting platform or both. After wafer reception by the robot arm 612, the arm is retracted and the shutter is actuated to close the doorway (when there is a screening device). Second, the arm 612 is rotated about the axis 01-01 and elongated in the direction of M3. Then, the 'mechanical arm# is out, and the wafer placed in front or held by the gripping mechanism is placed on the pre-aligner 25, and the direction of the rotation direction (with the wafer plane) is carried by the pre-aligner The circumferential direction of the vertical central axis is positioned within a predetermined range. After the positioning is completed, the transporting device 61 is in front of the robot arm, and after receiving the wafer by the pre-aligner 25, the robot arm is contracted to assume a state in which the arm can extend in the M4 direction. Thereby, the door 272 of the shielding device 27 is actuated to open the inlet and outlet ports 226 and 436, and the robot arm is extended to place the wafer on the upper side or the lower side of the wafer holder 47 of the first loading chamber 41. In addition, before the wafer device is opened and the wafer is delivered to the wafer holder 47, the aperture 435 formed in the partition wall is closed in an airtight state by the blind door 461 of the shielding device. In the wafer transfer process performed by the first transfer device, the gas supply device i provided on the shark body of the small-sized 垅 device is cleaned in a laminar znt (downstream) to prevent the middle of the transfer. A situation in which dust adheres to the surface of the wafer. A part of the air around the conveying device (in the present embodiment, about 20% of the air supplied by the feeding device is mainly subjected to 丨丨丨丨丨丨丨丨-丨 丨丨丨 丨 丨 丨 丨 丨丨丨·丨丨- (Please read the note on the back and fill out this page) 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 312767 A7 B7 V. Invention Description (70 Pollution of the air, 4 丄 by the discharge device 24 The suction duct 241 is sucked and discharged. The remaining air is recovered by the recovery duct 23曰2 provided at the bottom of the casing, and is returned to the supply device 231. The wafer is placed by the first conveyor 61. After the inside of the wafer holder 47 in the first frame = 41 of the loading chamber 4, the shielding device 27 is closed, and the inside of the holder 2 is sealed. Thus, the load chamber 41 is filled with an inert gas: : The air is discharged, and then the inert gas is also discharged, so that the loading into the vacuum state in the 41. The vacuum gas in the loading chamber is only a low vacuum. The vacuum in the loading chamber 41 reaches a certain vacuum. At a certain level, the concealer device will generate an action to make the door 461 The sealed inlet and outlet 434 is opened, and is extended forward by the robot arm (9) of the second conveying device 63, and a wafer is taken out from the wafer receiver 47 by the holding device at the front end (placed above the front end or by the front side) After the wafer is received, the arm is contracted, re-operated by the shielding device 46, and closed by the door 4 inlet 435. Before the shielding device 46 is opened, the arm (4) is pre-presented to be able to face the frame 81 47 The direction in which the direction N1 is extended. Further, as described above, before the shielding device 46 is opened, the entrances and exits 437, 325 are closed by the door 452 of the shielding device 45 to block the inside and the second loading chamber 42 in an airtight state. The inside of the chamber 31 communicates with the vacuum in the second loading chamber 42. When the shielding device 46 closes the inlet and outlet 435, the vacuum is again evacuated in the second loading chamber 42. The vacuum degree in the load chamber 41 is high. During this period, the mechanical arm of the second transporting device 61 rotates in the direction of the stage device 5 in the working chamber 31 to the paper scale. (CNS) A4 Specifications 210 X 297 mm) -----I--------------^--------- rtt read the notes on the back and fill out this page) 1286776 A7 ____B7_____ V. INSTRUCTION DESCRIPTION (71) Position that can be stretched. On the other hand, in the stage device in the working chamber 31, the Y stage 52 moves to the upper side in Fig. 2, that is, the center line X of the X stage 53. _X〇, and the X-axis passing through the rotation axis 02_02 of the second conveying device 63, please read the back surface precautions and fill in the same position on the page line, and the X stage 53 moves to the leftmost position in the second figure. Close to the position and stand by in this state. When the vacuum state of the second loading chamber and the working chamber are substantially the same, the door 452 of the shielding device 45 will actuate and open the inlet and outlet 437, 325, and extend the robot arm so that the front end of the robot arm holding the wafer and the working chamber 3 1 The stage devices are connected. The wafer is then placed on the mounting surface 551 of the stage device 50. After the wafer is placed, the robot arm is shrunk and the access ports 437, 325 are closed by the screening device 45. The Ministry of Economic Affairs, the Ministry of Finance, and the Bureau of Employees, and the Consumers' Co., Ltd. Printed the above. The above describes the operation of transporting the wafers in the cassette C to the stage device. However, when the wafer is loaded and returned from the stage device to the cassette C after being placed on the stage device and the processing is completed, the operation opposite to the above operation can be performed. Further, in order to mount the plurality of wafers on the wafer holder 47, when the wafer carrier and the stage device are crystal-transferred by the second transfer device, the first transfer device can be used simultaneously to perform the card and the structure. The wafer is transferred between and the inspection process is effectively performed. Specifically, in the wafer _ 47 of the second transfer device, there are two cases of the processed wafer A and the unprocessed wafer b. (1) First, the unprocessed wafer B is moved to the load carrying device 5 Hey, start processing. The processed wafer A is loaded by the robot arm in the same manner. (2) In this process, the object device 50 is moved into the wafer holder 47 by the robot arm.

312767 1286776 A7 B7 V. INSTRUCTION DESCRIPTION (72) The unprocessed wafer C is taken out from the wafer holder 47 and positioned by the pre-aligner, and then moved to the wafer holder 47 of the loading chamber 41. (Please read the precautions on the back and fill out this page.) By this, the wafer B can be transferred to the wafer in the processing, and the processed wafer A can be replaced with the unprocessed wafer C. Further, by using such a method for performing inspection and evaluation, a plurality of stage devices 50 can be simultaneously arranged in parallel, and in each device, by moving the wafer from the wafer holder 47, at the same time The wafers are processed in the same way. Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives Figure 6 shows a modification of the main casing support method. In the modification shown in Fig. 6, the casing supporting means 33a is constituted by a rectangular steel plate 331a having a thickness, and the casing main body 32a is placed on the steel plate. Therefore, the bottom wall 32 la of the casing main body 32a has a thinner structure than the bottom wall of the front embodiment. In the modification shown in Fig. 7, the frame main body 32b and the load chamber 40be are supported by the frame structure 336b of the casing supporting device 33b to be fixed to the lower end of the plurality of vertical frames 337b of the frame structure 336b by suspension. It is fixed to the four corners of the bottom wall 32 lb of the case main body 32b, and supports the peripheral wall and the top wall by the bottom wall. The anti-vibration device 37b is disposed between the frame structure 336b and the gantry 36b. Further, the loading chamber 4 is suspended by the suspension member 49b fixed to the frame structure 336. In the modification in which the case main body 32b is shown in Fig. 7, since it is supported by the suspension method, the center of the main body and all the various devices installed therein are reduced in centering. In the supporting method including the main casing and the loading chamber of the above-described modification, a method in which vibration from the ground is not transmitted to the main casing and the loading chamber is employed. In other variants not shown, only the main body of the main body of the main casing is made of the Chinese National Standard (CNS) A4 specification (21〇X 297 public) 72 312767 1286776 A7 B7 5. Inventive description (73 (Please read the precautions on the back and fill out this page.) Supported by the body support device, the load compartment can be placed on the ground in the same way as the adjacent small environmental device. Further, in other modifications (not shown), 'only the main body of the main casing is supported by the frame structure in a hanging manner, and the loading chamber is placed on the ground by the same method as the adjacent small environmental device. In the above embodiment, the following effects can be obtained. (1) It is possible to obtain an inspection apparatus using a mapping projection method using an electron beam, and it is possible to process an inspection object with a high throughput. (2) Preventing the adhesion of dust by injecting clean gas into the inspection object in a small environmental space, and setting a sensor for observing the cleanness, and monitoring the dust in the space to face the inspection object. The sub-optics, the Ministry of Economic Affairs, the Intellectual Property Office, the employee consortium, the printed electro-optical device 70, and the lens barrel 71 fixed to the case body 32, wherein 'as shown in the schematic view of Fig. 8, is provided with a primary electron optical system (hereinafter referred to as primary optical system) 72 and secondary electron optical system (hereinafter referred to as secondary optical system) 74, an electron optical system; and a detection system. The primary optical system 72 is an optical system that irradiates an electron beam on an inspection object, that is, an optical system on the surface of the wafer, which includes: an electron rush 721 that discharges an electron beam; and an electrostatic lens that collects a primary electron beam discharged from the electron robes 721 The lens system 722; the Wiener filter, that is, the ΕχΒ separator 723; and the objective lens system 724, as shown in Fig. 8, the electronic slap is placed at the top and arranged in order. The lens constituting the objective lens system 724 of the present embodiment is a decelerating electric field type objective lens. In this embodiment, the optical axis of the one-person electron beam emitted by the electron grab 721 and the illumination light of the wafer W irradiated to the inspection object are appropriate ((10) A4 &amp; 21〇) &lt; 297 Meal 5 73-—312767 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1286776 A7 ^^^--^_ —— V. Invention description (74) Relevant and inclined. The objective lens system 724 and the inspection object, that is, the wafer WT, are provided with an electrode 72, the electrode 725 is axially symmetric with respect to the illumination of the primary electron beam, and the axis is related to the axis, and the voltage is controlled by the power source 726. There is provided a lens system 741 formed of an electrostatic lens that passes through secondary electrons separated from the secondary system by the yaw deflector 724. This lens system 741' functions as an enlarged mirror that enlarges the secondary electron image. The detection system 76 is provided with a detector 761 and a video processing unit 763 which are disposed on the image plane of the lens system 741. Grab (Electronic Pit) Use a hot electron source as the source of electrons. The electron emission (radiator) material is LaB6. The right side melting point (lower vapor pressure at high temperature) and a small power function can be used. Other materials: use a truncated cone-shaped electron grab with a tapered shape at the front end or a tapered front end. The diameter of the front end of the truncated cone is ι〇〇 from m or so, although an electric field source or a hot electric field is used. Electronic grabbing, but in the case of the present invention, when a relatively large current (about 1 / ί A or so) is irradiated to a wide area (for example, 1 〇〇χ 25 to 4 〇〇χΐ〇〇 / / m 2 ), The thermal electron source of ^aB6 is the best. (Sem mode _, generally uses a hot electric field electron source.) In addition, the hot electron source is a way to emit electrons by heating the electron discharge material, and the hot electric field is released. When the electron source is applied, the electron is released by applying a high electric field to the electron-releasing material, and the electron emission is re-used to heat the electron-releasing portion to stabilize the electron emission. 0 The paper scale is applicable to the Chinese national standard (CNS) )A4 specifications (21 0 X 297 公爱) 312767 -----------装---------Book---------^一^ (Please read the notes on the back first) Fill in this page) B7 Intellectual Property Office of the Ministry of Economic Affairs X Consumer Cooperation, Society Printing ^86776 V. Invention Description (75): Forming an electron beam illuminated by an electron, in the shape of a crystal, or a circle (ellipse) Electron beam ^...The mouth P knife of the yangyang is called the primary electron optical system. By controlling the lens condition of the primary electron light system, the beam size or the male and the degree of the motor can be controlled.

^ The £xB (Wiener filter) chopper's sub-electron beam at the link of the Human Science Department can be incident perpendicularly to the wafer. The hot electrons emitted by the cathodes are made up of Wenner (W-pole, two-line polar lens, and processed by electrons to form an overlapping image. H by (four)-sub-system electrostatic lens will use the illumination field of view The aperture causes the electron beam that is appropriate for the incident angle of the lens to be imaged on the optical aperture in a rotationally asymmetric form. Then the surface of the wafer is surface-irradiated. The rear section of the primary electrostatic lens is purchased as a three-stage quadrupole. And a segment of the aperture aberration correction electrode. Although the quadrupole lens has strict control of alignment accuracy, compared with the rotationally symmetric lens, it has a strong converging effect, which can be caused by the aperture aberration. The correction electrode applies an appropriate voltage to correct the aberration of the spherical aberration corresponding to the rotationally symmetric lens, whereby a uniform surface beam can be irradiated to a predetermined region. The electron optical system uses an electrostatic lens (CL) corresponding to the objective lens. TL) images the second-order secondary electron image generated by the electron beam irradiated on the wafer at the position of the field of view aperture, and expands the projection in the lens (PL) of the subsequent stage. Imaging the projection optical system called a secondary electron optical system. In this case, applying a negative bias voltage (decelerating electric field voltage) to the wafer. Decelerating electric field has a reduction effect on the illumination beam, can reduce sample damage in addition, also

I 11 ------------ I--Please read the notes on the back and fill out this page.) Gift - This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 75 312767 1286776 A7 ' ~~------------ V. Description of the invention (76) (Please read the note on the back and fill out this page.) Use the potential difference between CL and wafer to sample The secondary electrons that occur on the surface have the effect of reducing chromatic aberration. The electrons converged by CL are imaged on the FA by TL, and the image is magnified and projected by PL, and imaged on a one-person electronic detector (MCP). This optical system is provided with NA between and, and is optimized to form an optical system capable of reducing off-axis aberrations. In order to correct the error in the manufacture of the electro-optical system, or to correct the image astigmatism or anisotropy magnification which occurs when passing through the Εχβ filter (Wiener filter), the electrostatic octupole (STIG) is arranged for correction. For the shaft lens, correction is performed with a deflector (〇p) disposed between the lenses. Thereby, a mapping optical system capable of performing uniform decomposition energy in the field of view can be realized. An electromagnetic mirror device that disposes an electrode and a magnetic pole in an orthogonal direction and makes an electric field and a magnetic field mutually positive. When an electromagnetic field is selectively supplied, an electron beam is incident from the one direction to the magnetic beam. A bias is generated, and an electron beam incident from the opposite direction can produce a condition (Wiener condition) that offsets the influence of the power received by the field and the power received by the magnetic field (the Wiener condition), whereby the primary electron beam is biased toward the wisdom of the Ministry of Economy. The property bureau employee consumption cooperative prints and illuminates the wafer in a vertical manner, while the secondary electron beam directly directs the detector to the detailed configuration of the electron beam deflection 723, which is displayed using the maps # and 9 The figure of the longitudinal section formed by the A_A line is illustrated. As shown in Fig. 9, the electron beam deflecting portion is formed in a plane perpendicular to the optical axis of the mapping projection optical portion to form an electric field and a magnetic field orthogonal. The structure, that is, the ExB structure. Here, the electric field is made of electrodes 723-1 and 312767 having a concave curved surface. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Printed by the Ministry of Intellectual Property of the Ministry of Intellectual Property

312767 1286776 V. Inventions (77) 723-2. The electric fields generated by the electrodes 723-1 and 723-2 are controlled by the control units 723a and 723d, respectively. On the other hand, a magnetic boundary is generated by arranging the electromagnetic coils 723-la and 723-2a so that the electric field generating electrodes 723_1 and 723-2 are orthogonal. Further, the electrolysis generating electrodes 723 1 and 723 2 are seed points. (It can also be concentric circles). At this time, in order to improve the uniformity of the magnetic field, the magnetic circuit 42 is formed by a pole piece having a parallel plate shape. In the longitudinal section of the A-A line, the electron beam moves, as shown in Figure 1. The irradiated electron beams 711a and 711b are deflected by the electric field generated by the electrodes 723 and 723-2, and the electromagnetic coil 723_u and the generated magnetic field, and are incident on the sample surface in the vertical direction. Here, the incident position and angle of the electron beam deflecting portion 723 that irradiates the electron beams 7113 and 7111) are determined together after determining the electron energy. In order to enable the secondary electrons 712a and 712b to be direct, and the electric field and magnetic field conditions are the electric field generated by the W electrode 723-U 723_2, and the magnetic fields generated by the electromagnetic coils 723-la and 723_2a, respectively, by the respective control portions μ" And 723d, 723c, and 723b are controlled to control, so that the secondary human electrons can directly enter the electron beam deflecting portion 723 and enter the above-mentioned mapped projection light % sub-portion. Here, the velocity (m/s) of the V-based electron 712, B-series magnetic field (T), e-system% Xing 1 mile (l) 'E-type electric field (V/m). The second Rayleigh image of the detector is formed by the wafer imaged by the secondary optics. After the microchannel plate (MCP) is increased, it is transformed into a light image by contact with the phosphor screen. The principle of MCP is to collect millions of diameters. I 25 m, extremely fine conductive glass capillary with a length of 0.24 to 1.0 mm. Dry, ^, s 'Shaping it ------------^---------^--------- (Please read the notes on the back first) Fill in this page) 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention description (78) Thin plate shape, therefore, by applying a predetermined voltage, a capillary can be made Converted to separate secondary electron enhancers and form a secondary electron enhancer. The detector becomes a light image, through the vacuum transmission window, by the FOP system placed in the air, The TDI_CCD is projected in a one-to-one manner. Next, the operation of the above-configured electro-optical device 7A will be described. As shown in Fig. 8, the primary electron beam emitted by the electron grab 72 is replaced by the lens system 722. The bundled primary electron beam is incident on the ΕχΒ-type deflector 723, and is biased to be vertically irradiated toward the surface of the wafer w, and then imaged on the surface of the wafer w by the objective lens 724. By irradiation of the electron beam The secondary electrons emitted from the wafer are accelerated by the objective lens system 724, incident on the ΕχΒ-type deflector 723, and directly directed to the deflector, and then guided to the detector 761 by the lens system 741 of the secondary optical system. Then, The detection is performed by the detector 761, and the detection signal is transmitted to the image processing unit 763. In the present embodiment, the objective lens system 724 is applied with a high voltage of 1 〇 to 20 kV and is provided with a wafer. in Therefore, in the wafer W, there is a penetrating body, and after the voltage supplied to the electrode 725 is adjusted to -200 V, the electric field of the electron beam irradiation surface of the wafer becomes 〇 to 〇.1¥/111111 (- indicates the wafer The W side is a high potential. In this state, although the defect inspection of the wafer W can be performed without causing a discharge between the objective lens system 724 and the wafer W, the detection efficiency of the secondary electrons is slightly abrupt.下-------- Install i丨丨丨丨定··--- I--- (Please read the notes on the back and fill out this page)

312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention Description (79) Drop. Therefore, a series of operations of illuminating the electron beam and detecting the secondary electrons can be performed, for example, four times in a continuous reading, and the results of the four times of detection can be accumulated or equalized to obtain a predetermined detection sensitivity. Further, when the wafer has no through-hole b, even if the voltage supplied to the electrode 725 is +350 V, the defect inspection of the wafer W can be performed without causing discharge between the objective lens system 724 and the wafer W. At this time, since the secondary electrons are bundled by the voltage supplied to the electrode 725, and further concentrated by the objective lens 724, the detection efficiency of the secondary electrons in the detector can be improved. As a result, the processing of the wafer defect device becomes high speed, and the inspection can be performed with high throughput. The functional relationship of the seat type I and the overall stupid description are shown in the figure. However, some of the components are omitted. The inspection apparatus in Fig. 11 has a primary column 71 _ 1, a secondary column 71-2, and a processing chamber 32. Inside the primary column 71-1, an electron grab 721 is provided, and an optical system 72 is disposed on the optical axis of the electron beam (primary light beam) irradiated by the electron grab 721. Further, a stage 5 is provided inside the processing chamber 32, and a sample w is placed on the stage 50. On the other hand, inside the secondary column 71_2, on the optical axis of the secondary beam generated by the sample hip, a cathode lens 724, an opening number ΝΑ-2, a Wiener filter 723, and a second lens 741- are disposed. 1; field opening diameter 1^-3; third lens 741-2; fourth lens 741-3 and detector 761. Further, the number of openings ΝΑ-2 corresponds to an open gate, and is a metal (Mo, etc.) thin plate having a circular opening. The opening is set at the bundling position of the primary beam and the cathode is transparent----------Install-------------- (Please read the notes on the back first) Fill in this page again) This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 79 312767 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1286776 A7 — ____B7_____ V. Invention Description (80) Mirror 724 Focus position. Thereby, the cathode lens 724 and the number of openings Na_2 constitute a telecentric electron optical system. On the other hand, the output of the detector 761 is input to the control device 78A, and the output of the control device 780 is input to the CPU 781. The control signal of the CPU 781 is input to the primary column controller 71a, the secondary column controller 71b, and the stage drive mechanism 56. The primary column controller 7A performs lens voltage control of the optical system 72 once, and the secondary column controller 71b controls lens voltages of the cathode lens 724, the second lens 744-1 to the fourth lens 741_3, and The electromagnetic field control applied by the Wiener filter 723. Further, the stage drive mechanism 56 transmits the position information of the stage to the CPU 78, and the primary column 71_b is the secondary column controller Η. The processing chamber 32' is connected to a vacuum exhaust system (not shown), and is evacuated by a vacuum exhaust system turbo pump to maintain an internal vacuum state. (Primary beam) A primary beam from the electron grab 721, which receives the lens by a single optical (four), and the edge is directed to the Wiener filter (2). In this electronic tablet, LaB6, which can handle a large amount of current by a rectangular cathode, is used. In addition, a Goto and a Chinese-speaking system 72 use an electrostatic (or electromagnetic) lens with a non-symmetrical quadrupole or octopole of a rotating shaft. This is the same as the cylindrical lens, which can induce bundling and divergence by the X-axis and the γ-axis, respectively. The second and second sections are used as the material mirror, and (4) by the conditions of each lens, the light beam irradiation area on the test surface can be shaped into an arbitrary rectangle or ellipse without knowing the loss of ft or electrons. shape. Specifically, when using electrostatic pickups, when using mirrors, four cylindrical rods are used. The opposite electrodes are set to equipotential and the phases are supplied with opposite voltage characteristics. The scale applies to China's soup ((JNS) A4 specification (10) x 80 312767 -----------Αν ^-------^--------- (please read the back Note: Please fill in this page again) 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 B7 V. Invention Description (81) In addition, for the quadrupole lens, the cylindrical deflector can be used, and the electrostatic deflector can also be used. A circular plate that is often used is divided into quarter-shaped lenses, whereby the purpose of miniaturization of the lens can be achieved. By the primary beam of the primary optical system 72, the obstruction is bent by the biasing action of the sodium sodium filter 723. The filter 723 orthogonalizes the magnetic field to the electric field, sets the electric field to E, sets the magnetic field to B, and sets the charged particle velocity to v, and only directs the charged particles that meet the e=vB Wiener condition, and the orbits of other charged particles. When the primary beam is used, the magnetic field power FB and the electric field power FE are generated, and the beam is bent. On the other hand, when the secondary beam is used, the power FB and the power FE act in the opposite direction. The formation is offset, so the secondary beam can be directly directed. The lens voltage of the primary optical system 72 is set so that the primary light beam can be imaged at the opening portion of the number of openings NA-2. The number of openings NA-2 prevents excess electron beams diffused in the device from reaching the sample surface, and prevents the sample W from being Since the alpha-number NA-2 and the cathode lens 724 form a telecentric electron optical system, the primary beam transmitted through the cathode lens 724 becomes a parallel beam, and the sample W is uniformly and uniformly irradiated. That is, it can be realized by an optical microscope called illumination illumination. When a primary beam is irradiated onto a sample, secondary electrons, reflected electrons, and rear-diffused electrons are generated from the beam irradiation surface of the sample as a secondary beam. . The secondary beam passes through the lens while receiving the lens of the cathode lens 724. -----------^---------^--------- (Please read the notes on the back and fill out this page) This paper size applies to China. Standard (CNS) A4 specification (210 X 297 public meals) η 312767 1286776 A7 B7 V. Description of Invention (82) However, the cathode lens 724 is composed of three electrodes. The lowermost electrode is designed to form a positive electric field between the potential on the side of the sample W, and to introduce electrons (especially secondary electrons having small directivity) into the lens. Further, the lens acts to apply a voltage ' to the first and second electrodes of the cathode lens 724 and to convert the third electrode to a zero potential. On the other hand, the number of openings NA-2 is placed at the focus position of the cathode lens 724, that is, the rear focus position of the sample W. Therefore, the electron beam from outside the center of the field of view (off-axis) also becomes a parallel beam, and passes through the center position of the number of openings NA-2 without deviation. Further, in the secondary beam, the number of openings NA-2 can control the lens aberration of the second lens 741-1 to the fourth lens 743-1. The secondary beam passing through the number of openings NA-2 can be directly transmitted without being biased by the Wiener filter 723. Further, by changing the electromagnetic field applied to the Wiener filter 723, only electrons having a specific vignet (for example, secondary electrons, or reflected electrons, or backside diffused electrons) can be introduced from the secondary beam to the detector 761. . If the secondary beam is imaged only in the cathode lens 741, aberrations are likely to occur due to the lens being too strong. Therefore, in combination with the second lens 741-1, imaging is performed once. The secondary beam can be imaged by the cathode lens 724 and the second lens 741-1 on the field opening diameter _3. At this time, the third lens 741·2 and the fourth lens 741-3 are added to the lens structure for expanding the intermediate image because the magnification required for the secondary optical system is insufficient. The secondary beam is enlarged by the third lens 741-2 and the fourth lens 741_3, and the image is collectively imaged three times. In addition, the third lens 741_2 can also be combined. Please read the back surface note _ re-writing and writing; page έ Ministry of Economic Affairs, Ministry of Finance, Bureau of Staff and Workers, Consumer Co., Ltd.

1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 R7 —------—------- .____ V. Invention description (83) and 4th lens 741-3 once (total twice ) Imaging. The second lens 741-1 to the fourth lens 743-1 are each referred to as a unitary potential lens or a rotary axisymmetric lens of an Eindzwei lens. Each lens is composed of three electrodes, and the outer two electrodes are generally brought to a zero potential, and are controlled by performing a lens action by a voltage applied to the center electrode. Further, the middle of the image point is disposed with a field opening diameter NA-3. Although the field opening diameter NA-3 is the same as that of the optical microscope, the field of view is limited to the necessary range, but in the case of an electron beam, the excess beam and the third lens 741-2 and the fourth stage of the rear stage can be used. The lens 741 _3 is also interrupted to prevent charging or contamination of the detector 761. Further, the magnification can be set by changing the lens condition (focal length) of the third lens 741-2 and the fourth lens 741-3. The secondary beam is enlarged by the secondary optical system and imaged on the detection surface of the detector 761. The detector 761 is an MCP that increases electrons, a fluorescent plate that converts electrons into light, a lens or other optical element that is used to connect a vacuum system to the outside and transmits an optical image, and an imaging element (CCD, etc.). Composition. The secondary beam is imaged and amplified on the Mcp detection surface, and the electrons are converted into optical signals by the fluorescent plate, and then converted into photoelectric signals by the imaging element. The control device 780' reads the image signal of the sample by the detector 761 and transmits it to the cpu781. The CPU 781 performs defect inspection of the pattern from the image signal by template matching or the like. Further, the stage 5 is movable in the XY direction by the stage driving mechanism 56. The CJ&gt;U781 reads the position of the stage 50, and outputs a drive control signal to the stage drive mechanism % to drive the stage 50, and sequentially performs image detection and inspection. — — — — — — II — II — &gt; — — — — — — — — (Please read the notes on the back and fill out this page.) This paper size applies to China National Standard (CNS) A4. Specification (210 X 297 mm) 83 312767 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Print A7 _B7_____ V. Invention Description (84) Thus, the inspection apparatus of this embodiment is composed of the number of openings NA-2 and the cathode lens 7. 2 4 constitutes a telecentric electro-optical system, so that the beam can be uniformly irradiated onto the sample on the corresponding primary beam. That is, it is easier to implement the illumination. On the corresponding secondary beam, since all the principal rays from the sample are perpendicular to the cathode lens 724 (parallel to the optical axis of the lens) and pass through the number of openings NA-2, they do not deviate from the peripheral light and do not decrease. The brightness of the image in the peripheral part of the sample. In addition, because of the irregularity of the energy of the electrons, the imaging position is deviated, and the so-called chromatic aberration of magnification (especially secondary electrons, which is large in irregularity, so that the chromatic aberration of magnification is large) is caused by The number of openings na-2 is set at the focus position of the cathode lens 724 to control the chromatic aberration of magnification. In addition, the change in the chromatic aberration of magnification is performed after the number of apertures NA-2 has passed. Therefore, even if the set magnification of the lens conditions of the third lens 741-2 and the fourth lens 741_3 is changed, the overall field of view on the detection side can be obtained. Get a uniform image. In the present embodiment, although a uniform image can be obtained, generally, the magnification is increased, and the image brightness is lowered. In order to improve the problem, the lens condition of the optical system is set once, and when the lens condition of the primary optical system is changed and the magnification is changed, the effective field of view of the sample surface determined by the change and the electrons irradiated on the sample surface are The same size. = that is, when the magnification is increased, the field of view is narrowed, and at the same time, by the irradiation energy density of the high electron beam, even if the secondary optical system is used to enlarge the technology, the signal density of the detected electrons can often be Keep it constant, not the paper applicable standard (CNS) A4 specification (; 297 public meals) -^---^ _ ------------ loading --------. — (Please read the notes on the back and fill out this page) 1286776 A7

5. Invention Description (85) Causes the brightness of the image to decrease. In addition, in the inspection equipment of the present embodiment, the Wiener filter 723 which bends the primary beam and bends the secondary beam is used, but is not limited thereto. It is also possible to use an inspection device consisting of a Wiener filter that directs the primary beam to direct the sub-bending secondary beam orbit. Further, in the present embodiment, the rectangular light beam is formed by the rectangular cathode and the quadrupole lens. However, the shape is not limited to such a shape, and may be, for example, a circular beam, a rectangular beam, or an elliptical beam, or a circular beam may be passed through. Slit to become a rectangular beam. Between the electrode objective 724 and the wafer W, an electrode 725 having a substantially axisymmetric shape with respect to the optical axis of the electron beam is disposed. Figures 12 and 13 show an example of the shape of the electrode 725. Figs. 12 and 13 are oblique views of the electrode 725, Fig. a is a perspective view showing a state in which the electrode 725 is axially symmetrical, and Fig. 13 is a perspective view showing the electrode 725 in a disk shape symmetrical. In the present embodiment, as shown in Fig. 12, the case where the electrode 725 is in a cylindrical shape will be described. However, the electrode may have a disk shape in a state where the irradiation optical axis of the corresponding electron beam is substantially symmetrical. Further, in order to prevent discharge between the objective lens 724 and the wafer W in the electrode 725, an applied voltage of the wafer W is applied by the power source 726 (in the present embodiment, since the ground is applied, the potential is 〇 v) a lower predetermined voltage (negative potential). The potential distribution between the wafer W and the mirror 724 at this time will be described with reference to Fig. 14. —---------Install---------Book--------- (Please read the notes on the back and fill in this page) This paper scale applies to Chinese national standards. (CNS) A4 specification (210 X 297 mm) 85 312767 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 B7 V. Inventive Note (86) Figure 14 shows the potential distribution between wafer w and objective 724 Chart. In Fig. 14, the voltage distribution from the wafer W to the objective lens 724 is displayed with the position of the electron beam irradiation optical axis as the horizontal axis. In the conventional electronic wire device without the electrode 725, the voltage distribution of the objective lens 724 to the wafer W is changed to the grounded wafer W with the maximum value of the voltage applied to the objective lens 724. (The thin line of Fig. 14) On the other hand, in the electron beam apparatus of the present embodiment, the electrode 725 is disposed between the objective lens 724 and the wafer W, and the electrode 725 is applied with a voltage higher than the wafer W by the power source 726. The lower predetermined voltage (negative potential), therefore, weakens the power supply electric field. (Thick line in Fig. 14) In the electron beam device of the present embodiment, an electric field is not collected in the vicinity of the penetrating body b of the wafer W to become a high electric field. Even if the electron beam emits the secondary electrons and the secondary electrons are emitted, the secondary electrons released are not accelerated as the residual gas is ionized, so that discharge between the objective lens 724 and the wafer W can be prevented. Further, since discharge can be prevented from occurring between the objective lens 724 and the wafer W, the pattern of the wafer W is not damaged by the discharge. Further, in the above-described embodiment, discharge between the objective lens 724 and the wafer w having the through-body b can be prevented. However, since a negative potential is applied to the electrode 725, the magnitude of the negative potential may be lowered. The secondary electron detection sensitivity of the detector 761. When the detected sensitivity is lowered, as described above, the cumulative detection result of the secondary electrons can be repeated or averaged by repeating the multiple operations of irradiating the electron beam and detecting the secondary electrons to obtain a predetermined paper size. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 86 312767 -------——^--------^--------- (Read first Precautions on the back side of this page) 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperatives Printed k Scales Timely (CNS) A4 Specifications (10) X 297 mm) A7 B7 V. Invention Description (87) Out of Sensitivity (Signal S/N ratio). In the present embodiment, the detection sensitivity is described as a signal-to-noise ratio (S/N ratio). Here, the above-described detection operation of the secondary electrons will be described with reference to FIG. Figure 15 is a flow chart illustrating the secondary electron detection operation of the electronic line device. First, by the detector 761, the secondary power from the sample to be inspected is detected, and the eight-person is judged whether the signal-to-noise ratio (S/N ratio) is above a predetermined value. In step 2, the signal-to-noise ratio is (S/N ratio) At the predetermined value, the secondary electron detection performed by the detector 761 is completed, so that the secondary electron detection operation is ended. On the one hand, in step 2, when the signal-to-noise ratio (S/N ratio) is less than a predetermined value, the electron beam can be repeatedly irradiated 4N times and the continuous action of the secondary electrons can be detected for averaging processing. (Step 3). Here, since the initial value of n is set to "!", the secondary electron detection operation is performed four times in step 3.

Next, "!" is added to N to perform accumulation (step 4), and then in step 2, it is judged again whether the signal-to-noise ratio (S/N ratio) is above a predetermined value. Here, when the signal-to-noise ratio (S/N ratio) does not reach the predetermined value, the process returns to step 3' and the secondary electron detection operation is performed eight times. The money accumulates the N value' and repeats the actions of steps 2 through 4 until the signal-to-noise ratio reaches a predetermined value. ▲ 曰 In addition, in the present embodiment, it has been explained that by applying a predetermined voltage (negative potential) lower than the applied voltage of the wafer W to the electrode 725, the pair 312767 Μ--------t- is prevented. -------- (Please read the phonetic on the back? Please fill out this page again) 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention description (88) Wafer W with through body b A discharge is generated, but sometimes the secondary electron detection efficiency is lowered. Therefore, when the sample to be inspected is a wafer having no through-body or the like, it is difficult to increase the secondary electron of the detector 761 by controlling the voltage applied to the electrode 725 when the sample to be inspected is generated between the objective lens 724 and the target 724. Check out efficiency. Specifically, even when the test sample is grounded, the voltage applied to the electrode 725 is set to a predetermined voltage higher than the voltage applied to the test sample, for example, set to +10V. At this time, the distance between the electrode 725 and the sample to be inspected is set to a distance at which no discharge occurs between the electrode 725 and the sample to be inspected. At this time, the secondary electron generated by the electron beam irradiation of the sample to be inspected is accelerated on the electron source 721 side by the electric field generated by the voltage applied to the electrode 725. In addition, the electric field generated by the voltage applied to the objective lens 724 can be further accelerated on the side of the electron beam source 72 to be converged, so that more secondary electrons can be incident on the detector 761 and Check out efficiency. Further, since the electrode 725 is axisymmetric, it has a lens function of condensing the electron beam that illuminates the sample to be inspected. Therefore, the primary electron beam can be contracted to be finer by the voltage applied to the electrode 725. Further, since the primary electron beam can be contracted more finely by the electrode 725, the objective lens system of lower aberration can be formed by the combination with the objective lens 724. As long as the lens action can occur, the electrode 725 can also be substantially axisymmetric. According to the electronic wire device of the above embodiment, the sample to be inspected and the objective lens----------------------------------------- Note: Please fill out this page again. This paper scale applies to China National Standard (CNS) A4 specification (21〇X 297 public) 88 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention Description (89) In the electric axis of the electron beam irradiation axis, the electric field intensity of the electron beam irradiation surface of the sample to be inspected can be controlled, so that the electric field between the sample to be inspected and the objective lens can be controlled. Between the sample to be inspected and the objective lens, the electrode which is substantially axisymmetric to the electron beam is irradiated, and the electric field intensity in the electron beam irradiation surface of the sample to be inspected can be weakened, so that the sample to be inspected and the objective lens can be eliminated. Discharge between. Since the application of the voltage to the objective lens is not changed, and the secondary electrons are effectively passed through the objective lens, the detection efficiency can be improved and a good signal of the S/N ratio can be obtained. The voltage for weakening the electric field intensity in the electron beam irradiation surface of the sample to be inspected can be controlled according to the type of the sample to be inspected. For example, when the sample to be inspected is a sample to be easily discharged between the objective lenses, the electric field intensity in the electron beam irradiation surface of the test sample can be weakened by changing the voltage of the electrode to prevent discharge. The voltage supplied to the electrode can be changed depending on whether or not the semiconductor wafer is connected, that is, the voltage for weakening the electric field intensity in the electron beam irradiation surface of the semiconductor wafer can be changed. For example, when the sample to be inspected is an object to be inspected which is easily discharged between the objective lenses, the electric field strength in the electron beam irradiation surface of the sample to be inspected can be weakened by changing the electric field of the electrode to prevent penetration or penetration. Discharge around the body. Since the discharge between the through body and the objective lens can be prevented, the pattern of the semiconductor wafer or the like is not damaged by the discharge. ------------Install---------Book--- (Please read the phonetic on the back? Please fill out this page again) # This paper scale applies to Chinese national standards (CNS ) A4 size (210 X 297 mm) 89 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention description (90) Because the potential supplied to the electrode is set to be higher than the charge supplied to the sample to be inspected When it is low, the electric field intensity in the electron beam irradiation surface of the sample to be inspected can be weakened, and the discharge of the sample to be inspected can be prevented. Since the potential to be supplied to the electrode is set to a negative potential and the sample to be inspected is grounded, the electric field intensity in the electron beam irradiation surface of the sample to be inspected can be weakened, and discharge to the sample to be inspected can be prevented.

Modification of IxB Separator Figure 16 shows an exb separator according to an embodiment of the present invention. Figure 16 is a cross-sectional view showing the optical axis cut in a vertical plane. The four pairs of electrodes 701 and 7〇8, 702 and 707, 703 and 706, 74 and 0705 for generating an electric field are formed of a non-magnetic conductor, which is generally cylindrical in shape and is screwed ( Not shown) is fixed to the inner surface of the electrode supporting cylinder 713 formed of an insulating material. The shaft of the electrode supporting cylinder 713 and the cylindrical shaft forming the electrode are in a state of being aligned with the optical axis 716. An optical axis 716 and a parallel groove 714 are provided on the inner surface of the electrode supporting cylinder 713 between the respective electric wires 70, 7, 2, 7, 03, 74, 705, 706, 707, and 708. The inner surface area is coated with a conductor 715 and set to a ground potential. When an electric field is generated, a voltage corresponding to "cose 1" is supplied to the electrodes 7〇2 and 7Ό3, a voltage corresponding to "-cosei" is supplied to the electrodes 706 and 707, and a voltage corresponding to "COS02" is supplied to the electrodes 701 and 704. The electrodes 705 and 708 are supplied with a voltage equivalent to r - c 〇 s02", whereby an almost uniform parallel electric field can be obtained in a region of the electrode inner diameter of about 6 〇〇 /0. Figure 17 shows the simulation results of the electric field distribution. In addition, in this example, although four pairs of electrodes are used, in fact, even in three pairs, as long as the inner diameter is about 40%, the paper size is still applicable to the Chinese National Standard (CNS) A4 specification (21〇x 297). Public Love) 90 312767 ------------·装---------Book--------- (Please read the notes on the back and fill out this page 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention Description (91) The same parallel electric field can be obtained. The magnetic field is generated by arranging two rectangular platinum alloy permanent magnets 709 and 710 in parallel outside the electrode supporting cylinder 7 13 . On the periphery of the surface on the optical axis 716 side of the permanent magnets 709, 710, a projection 712 made of a magnetic material is provided. The projection 712 compensates for a convex deformer formed on the outer side by magnetic lines of force on the side of the optical axis 716. Its size and shape can depend on the simulation analysis. On the outer side of the permanent magnets 709 and 710, a magnetic flux circuit 711 made of a ferromagnetic material is provided, and the circuit is configured such that the optical axis 716 formed by the permanent magnets 7〇9 and 710 is opposite to the optical axis 716 The passage can be formed into a cylinder coaxial with the electrode support cylinder 713. The ExB splitter shown in Fig. 16 is applicable not only to the mapped projection type electronic line inspection apparatus shown in Fig. 8, but also to the scanning type electronic line inspection apparatus. As described above, according to the present embodiment, the electric field and the magnetic field having the same field can be enlarged around the optical axis, and even if the irradiation range of the primary electron beam is expanded, the aberration passing through the ExB separator can be changed to no problem. Value. Further, since the magnetic pole is provided outside the electrode for generating the electric field while the projection is provided at the peripheral portion of the magnetic pole forming the magnetic field, not only the same magnetic field but also the electric field deformation caused by the magnetic pole can be reduced. Further, since the permanent magnet is used to generate a magnetic field, the entire EXB separator can be housed in a vacuum. Further, the electric field generating electrode and the magnetic path forming magnetic flux circuit can be formed in a coaxial cylindrical shape having the optical axis as a central axis, and -------Book - (Please read the note on the back and fill out this page) # This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 public) 91 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau Employee Consumption Cooperatives Printed A7 V. Invention Description (92) Achieve the miniaturization of the ExB separator. Charging device _ As shown in Fig. 1, the pre-charging device 81 is disposed in the working chamber 31 so as to be adjacent to the lens barrel 71 of the electro-optical device 70. The inspection apparatus is a device for inspecting an object to be inspected, that is, a substrate, that is, an electron beam to the wafer, to inspect a device pattern or the like formed on the surface of the wafer, and thus, even if the electron beam is irradiated As information on the surface of the wafer, information such as secondary electrons can still charge (charge) the surface of the wafer according to conditions such as wafer material and electron energy. In addition, the surface of the wafer may also have a strong charged part and a weakly charged part. When crystal, like, the secondary electronic information will also produce unevenness and = correct information. Therefore, in the present embodiment, in order to prevent the occurrence of the unevenness, a pre-charging device having the charged particle irradiation unit 811 is provided: before the inspection electrons are irradiated to a predetermined position of the wafer to be inspected, in order to eliminate the charging failure, The charged particles of the pre-charging device are irradiated with 带8 ι illuminating charged particles to eliminate charging unevenness. The surface of the wafer is charged, and the symmetry 'i.e., the wafer surface image' is preliminarily detected to evaluate the image, and the precharge device 81 is operated based on the detection result. - In addition, the primary electron beam can be scattered and irradiated in the pre-charging device. Fig. 18 shows an important part of an embodiment of the precharging device of the present invention. The charged particles 818 are accelerated by the voltage set by the bias power source 82, and are irradiated to the sample plate w by the charged particle irradiation line source 819. The inspected area 815 is the same as the area 816, indicating the place where the charged charged particles are irradiated, and the area 817 indicates that the fine (4) _ quasi (CNS) A4 ϋ - 9 Γ ^ Τ 27 Τ — — — — — — — — — ·1111111 ^ ·1111111« (Please read the note on the back and fill out this page.) Ministry of Economic Affairs, Intellectual Property Office, Staff and Consumer Cooperatives, Printing 1286776 A7 — B7 V. Inventions (93) ▼ Locations for electric particle irradiation. In the figure φ 隹 围 , , , , , 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行It is shown that another charged particle beam source 819 can be disposed in the opposite direction of the primary electron beam source, and the charged particle source Chuan, 819 is turned on/off in accordance with the scanning direction of the sample substrate w. At this time, if the charged particle energy is excessive, the secondary electron yield from the insulating portion of the sample substrate is more than 1, the surface is positively charged, or when the secondary electron is generated below the voltage, the phenomenon becomes Since it is complicated and the irradiation effect is lowered, it is most effective to set a cycle voltage of 100 ev or less (ideally 0 ev or more, 3 〇 eV or less) which is sharply reduced by secondary electrons. Fig. 19 is a view showing a second embodiment of the precharging apparatus of the present invention. This figure shows the illuminating electron beam type 825 type illumination source as the charged particles. The illumination source is composed of a hot filament 821, an extraction electrode 824, a shield 826, a filament power supply 827, and an electron extraction power supply 823. The lead-out electrode 824 is provided with a thick 〇.imm, a width of 2 min, and a slit of a length of 1.0 mm. The positional relationship with the filament 82 1 of the direct control of Ο·1 mm is a three-electrode electron-collision type cancer. The shield 826 is provided with a wide imm and a slit of 2 mm in length, and is spaced apart from the lead electrode 824 by an imm distance, and is formed in a form in which the slit regions of the two are uniform. The material of the filament is tungsten (W), a current of 2 A is injected, and an electron current of # a is obtained by an extraction voltage of 20 V and a bias voltage of 30 V. An example is shown here. For example, in the case of the filament material, a high melting point metal such as Ta, Ir, or Re, or a yttrium oxide plating layer w may be used; the filament current such as an oxide cathode may be made of a material, a wire diameter, or the like. Change in length. In addition, as long as the electron beam irradiation area, electric hand current, energy, etc. can be set in ---------_ loading --------- order --------- (please first Read the precautions on the back page and fill in this page. This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 93 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (94) appropriate The value of 'can also use other kinds of electronic grabs. Fig. 20 shows a third embodiment. The case where the irradiation source 829 type irradiation source is used as the charged particle is shown. The illumination line source is composed of a filament 821, a filament power source 822, a discharge power source 827, an anode 828, and a shield cover 826. The anode 828 and the shield cover 826 have the same size of 1 mm x 2 mm. , 1 two open seams into one. The operation is performed by introducing an arc discharge type by a hot filament 821 by introducing a film of about 1 Pa into a screen 83 826. Set the bias voltage to a positive value. Fig. 21 is a view showing the state of the plasma irradiation method of the fourth embodiment. The structure is the same as in Fig. 20. The operation is also the same as described above. The operation is performed by the arc discharge type of the hot filament 821. By setting the bias voltage to 〇v, the electric group 832 can be oozing out by the air gap by the air pressure, and is irradiated onto the sample substrate. . In the case of electro-optic irradiation, the surface potentials of both the positive and negative surfaces of the sample substrate may be close to 〇 based on the relationship between the groups of particles having both positive and negative charges. The charged particle irradiation unit 819 disposed close to the sample substrate W is a structure shown in Figs. 18 to 21, and the surface structure of the oxide film or the nitride film of the sample substrate W can be different by appropriate conditions. Or each of the sample substrates having different processes is irradiated with the charged particles 818, and the sample substrate is irradiated with the most appropriate irradiation strips, that is, after the surface of the sample substrate is electrically smoothed or saturated by charged particles. An image is formed by the electron line 7 1 1 712 to detect a defect. As described above, in this embodiment, the paper size that can be performed by charged particle irradiation is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 94 312767 ----I---I---装--------Book-----I (Please read the note on the back and fill out this page) # 1286776 Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperative Printed A7 B7 V. Invention Description (95) Pre-detection processing to avoid detection image distortion caused by charging, even if distortion occurs, it is not loud enough to correctly detect defects. Further, since the scanning can be performed by injecting a large amount of current which has previously been problematic in use, the secondary electrons can be detected in a large amount, and a good detection signal of the S/N ratio can be obtained, thereby improving the reliability of the defect detection. In addition, because of the large S/N ratio, even if the stage is scanned early, good image data can be produced and the throughput of the inspection can be expanded. In the 22nd, the imaging device including the precharging device of the embodiment is displayed in a mode. The imaging device includes a primary optical system 72, a secondary optical system 74, and a detection system 76, and a charge control mechanism 840 that uniformizes or reduces the charge charged by the inspection target. The primary optical system 72 is an optical system that irradiates an electron beam on the surface of an inspection target (hereinafter referred to as a target) W, and includes an electron gun 721 that discharges an electron beam, and an electrostatic lens that deflects the primary electron beam 711 emitted from the electron gun 721. 722; biasing the primary electron beam toward a Wiener filter whose optical axis is perpendicular to the object surface, that is, an ExB polarizer 723; and an electrostatic lens 724 biased toward the electron beam, such as FIG. It is shown that the electron robes 721 are arranged in the uppermost order, and the optical axis of the primary electron beam 711 released by the electron gun is inclined with respect to a straight line perpendicular to the surface of the object w (sample surface). The ΕχΒ deflector 723 is provided with an electrode 723-1 and a magnet 723-2. The secondary optical system 74 is provided with an electrostatic lens 741 disposed on the 偏 deflector 723 of the primary optical system. The detection system 76 includes a combination 751 of a scintillator and a microchannel (Mcp) that converts the secondary electrons 712 into an optical signal, a CCD 762 that converts the optical signal into an electrical signal, and image processing---- ----I Pack-----I--book--------- (Please read the phonetic on the back? Please fill out this page again) This paper scale applies to China National Standard (CNS) A4 specifications. (210 X 297 mm) 95 312767 The secondary optics 74 and the detector are the same as the conventional equipment, so the province 1286776 V. The invention (96) equipment 763. The structure and function of each component of the primary optical system 72 76 will be described in detail. The charge control mechanism 840, which can equalize or reduce the charge charged by the object, is provided in the present embodiment in such a manner that it is disposed close to the object w and is disposed closest to the object w^-secondary light (four) 72. An electrode 841 between the electrostatic deflection lens 724, a changeover switch 842 electrically connected to the electrode 841, a zero voltage generator 844 electrically connected to the terminal 843 of the changeover switch 842 _ side; and the other side of the changeover switch (4) Terminal (4) A charge detector 846 that is electrically connected. The charge detector 846 has high impedance. The charge reduction mechanism 840 further has a thumb 847 disposed between the electron 721 and the electrostatic lens of the secondary light (four) 72, and a voltage generator 848 electrically connected to the gate 847. The timing signal generator 849 can be used to check the ccd762 and the image processing device 763 of the % detection system; the switch 842 of the charge reduction mechanism 84; the voltage generator 844 and the charge detection s 846, and indicate the operation time. Next, the operation of the above-described electronic line device will be described. The primary electron beam 711 released by the electron gun 721 passes through the electrostatic lens 722 of the optical system 72 to reach the ΕχΒ polarizer 723, and is deflected by the polarizer 723 in the form of a surface perpendicular to the object W, and finally via the electrostatic polarizer. 724 illuminates the surface (object surface) WF of the object w. Secondary electrons 712 are released from the surface of the object w in accordance with the state of the object. The secondary electron 712 is sent to the 'combination device 751 of the scintillator and the MCP by the electrostatic lens 741 of the primary optical system 74, and is converted into light by the scintillator, and then----------Aw In---IIII I--- (Please read the note on the back and then fill out this page) Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed This paper scale applies China National Standard (CNS) A4 specification (210 X 297 public) 96 312767 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1286776 V. Invention Description (97) The CCD 762 converts the light into photoelectric light, and the image processing device 763 forms a secondary image by the converted electrical signal (with level ). Further, in the same manner as the inspection apparatus of the above-described type, the electron beam irradiated to the object can be scanned by using a known deflection mechanism (not shown), or by the table T of the branch object. Move to the χ, γ quadratic direction; or ^ from the above combination 'let the beam illuminate the desired position on the object surface WF to collect the data of the object surface. By irradiating the primary electron beam 7 of the object w, an electric charge is generated near the surface of the object w to form a charged state. As a result, the one-to-human electron 712 generated by the object WF can be changed by the coulomb force of the electric charge in accordance with the charge state, and the image formed in the image processing device 763 is distorted. The charging of the target surface WF varies depending on the state of the object... Therefore, when a wafer is used as the object, the wafer is not necessarily the same wafer, and changes with time. Therefore, when comparing two patterns on the wafer, a detection error may occur. Thus, according to the embodiment of the present invention, the CCD 762 of the detection system 76 measures the charged 电极 of the electrode 841 disposed near the object w by the high-impedance charge detector 846 during the neutral period after the image is captured by one scan. . Then, in the voltage generator 844, a voltage is generated to illuminate the electrons corresponding to the measured charged amount, and after the measurement, the switch 842 is activated, the electrode 841 is connected to the voltage generator 844, and the voltage is generated. The voltage generated by the device is applied to the electrode 841 to offset the electrification of the charge. Thereby, distortion of the image formed in the image processing device 763 can be avoided. Specifically, when a general voltage is supplied to the electrode 841, the bundle is set up --------I---^ · I I-----^--------- (please read first) Precautions on the back side of this page} This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 97 312767 1286776 A7 5. The invention (98) The electron beam is irradiated on the object W, if the counter electrode 04 1 Supplying other thunder, the focus condition will be greatly deviated, and the radiation will be irradiated in a wide area where the electric power is estimated to be more than ^ ^ ^ ^ and j current (by reading the back note) Fill in this page again) The positive charge of Tian Qian and the positively charged object converts the voltage of the wide area that is likely to be charged into a specific positive (negative) voltage and normalizes it, and can be transformed by homogenization or subtraction. The lower positive (4) voltage (including ον). The above-mentioned offset action is performed every time the broom is performed. The Wennar electrode 'ie, the gate 847 has the following function: the self-irradiation is irradiated during the airtime The electron beam is stopped to stably perform the charging and measuring action and the charging offset action. The time of the action is indicated by the timing signal generator 849 as 'for example' as shown in the time chart of Fig. 23. In addition, when the wafer is used as an object, the amount of charge varies depending on its position, so that it can be used in the CCD. The direction of the cat is swept, and the complex array electrode 841, the changeover switch 842, the voltage generator 844, and the charge detector 846 are set and subdivided to perform more precise control. According to the present embodiment, the following effects can be obtained. Printed by the Intelligent Property Bureau employee consumption cooperative (1) The image distortion caused by the charging may be reduced according to the state of the inspection object. (2) Since the neutral time of the measurement time can be utilized, the charging uniformity and offset are performed. Therefore, it does not have any influence on the throughput. (3) Since it can be processed immediately, it does not require post-processing time, memory, etc. ° (4) High-speed, high-accuracy image observation and defect inspection ~ Figure 24 shows the pre-printed paper scales associated with other embodiments of the present invention applicable to the Chinese National Standard (CNS) A4 specification (21 〇χ 297 mm) 98 312767 1 286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 B7 V. Inventive Note (99) A schematic diagram of the defect inspection equipment of the charging device. The defect inspection device consists of: electrons that release the primary electron beam 721; an electrostatic lens 722 that can deflect and shape the released electron beam; a sample chamber 32 that is evacuated in a vacuum by a pump (not shown); and a semiconductor wafer placed in the sample chamber In the state of the sample such as W, the stage 50 can be moved in a horizontal plane; the secondary electron beam and/or the reflected electron beam released from the wafer W by the irradiation of the primary electron beam are mapped and projected by using a predetermined magnification. And the imaged projection projection is an electrostatic lens 741; the imaged image is detected as a detector 770 of the secondary electronic image of the wafer; and the entire device is controlled, and the secondary electron image is detected according to the detector 700 a control unit 1 for performing wafer W defect detection processing. Further, the secondary electron image includes, in addition to secondary electrons, a benefit of reflecting electrons, which is referred to herein as a secondary electron image.Further, in the sample chamber 32, a UV lamp holder 1111 which emits light in a wavelength range containing ultraviolet rays is provided above the wafer W. The glass surface of the UV lamp holder 1 Π 1 is plated with a photoelectron emitting material 111 光 which emits photoelectrons e - due to the photoelectric effect by the light emitted from the UV lamp holder 1111. The UV lamp holder 1111' can be selected from any type of lamp holder as long as it emits a light source having a wavelength range of light emitted from the photoelectron emitting material 1110. Low-pressure mercury lamp holders that emit ultraviolet light at 254 nm are generally used to be cost effective. Further, as the photoelectron emitting material 1110, as long as it has the ability to emit photoelectrons, it is preferable to select any metal such as Au. The energy of the above photoelectron is lower than that of the primary electron beam. Here's low energy -------1---A__w --------t--------- (please read the notes on the back and fill out this page) Applicable to China National Standard (CNS) A4 Specification (210 X 297 mm) 99 312767 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 B7 V. Invention Description (1GG) Quantity, index eV to number + ev order, most Good is 0 to 10 eV. Any mechanism for producing such low energy electrons can be used in the present invention. For example, the same effect can be achieved by having a low-energy electron that is not shown to replace the UV lamp holder 1111. Further, the defect inspection device of the present embodiment is provided with a power source U13. The negative electrode of the power source 1113 is connected to the photoelectron emitting material U1, and the positive electrode thereof is connected to the stage 50. Therefore, the photoelectron emitting material 111 is in a state of applying a negative voltage to the voltage of the wafer 50, that is, the wafer w. The structure of the detector 770 can be any structure as long as the secondary electron image imaged by the electrostatic lens 741 can be converted into a post-processable signal. For example, as detailed in the 46th wind, the structure of the detector 77A includes: a multi-channel plate 771; a fluorescent surface 772; a relay optical system 773; and a camera sensor 774 formed of a plurality of CCD elements. The multi-channel board m has a plurality of channels in the board, and the secondary electrons imaged by the electrostatic lens 741 generate more electrons when passing through the channel. That is, the secondary electrons are increased. The phosphor surface 772 converts the secondary electrons into light by the fluorescence generated by the amplified secondary electrons. The relay lens 773 introduces the fluorescent light into the ccd imaging sensor 774 and the CCD imaging sensor 774, and converts the intensity distribution of the two-human electrons on the surface of the wafer w into electrical signals of the respective components, that is, digital image data, and outputs the same. Go to control unit 1〇16. As shown in Fig. 24, the control unit 1016 can be constituted by a general personal computer or the like. The computer has a control unit main body that performs various control and wide processing according to the specified program, and a CRT 1015 that displays the processing result of the main body i 〇丨4, for the processor to input a command keyboard or slide. Rats and other input 丨丨丨丨丨丨丨 丨 丨丨丨丨丨丨 丨丨丨丨丨丨 订 订 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( (CNS) A4 specification (2) G x 297 public interest) 100 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau Consumer Cooperative Printed A7 V. Invention Description (101 Department 1 01 8. Of course, you can also use the hard disk for defect inspection equipment, or workstations, etc. The control unit main body 1014 is formed of various control boards such as a CPU, a RAM, a ROM, a hard disk, and a video substrate (not shown). The memory such as a RAM or a hard disk is distributed: The electrical signal received by the detector 770, that is, the secondary electronic image memory area 8 of the digital image data of the secondary electronic image of the wafer W is stored. In addition, the hard disk is stored with a control device for controlling the defect. The control program; and the secondary electronic image poor material is read from the storage area 1〇〇8, and the defect detection program 1〇〇9 of the defect of the wafer w is automatically detected according to the specified calculation method according to the image data. The defect detecting program 1009 is provided, for example, to compare the inspection position of the wafer w with another inspection position, and to treat the pattern different from the pattern of most of the other positions as a defect and to the processor (perper〇r The function of displaying the warning is displayed. The secondary electronic image 1 () 17 is also displayed in the display portion of the CRT 1015, and the defect of the wafer W is detected by visual observation by the processor. Next, the flowchart of Fig. 27 is used. For example, the operation of the electronic wire device for performing cancer formation in Fig. 24 will be described. First, the wafer w to be inspected is mounted on the stage 5A (step 12〇0). As shown below, a plurality of wafers W stored in a loader (not shown) are automatically mounted on the stage 5 。 one by one. Next, 'the electrons are discharged by the electron 721, and the electrons are passed through the electrostatic lens 722. Specified inspection area of the wafer W surface (step 12 〇2). Secondary electrons and/or reflected electrons are emitted from the wafer w that irradiates the electron beam (hereinafter referred to as "secondary electron" Bean pregnancy _ human electricity in"), ..., wafer w is charged to positive The size of the paper is applicable to the Chinese national ^^7S) A4 specification (10) X 297 public hair) 101 312767 I! — — !! — f--- — — — — — ^ -ml —--I (please read the phonetic transcription on the back) [Items of this page] 1286776 A7, invention description (1〇2). Next, by expanding the electrostatic lens 741 of the projection system, the secondary electron image that occurs is at the detector at a specified magnification. Imaging is performed in 770 (step 1204). At this time, in a state where a negative voltage is applied to the photoelectron emitting material 111 by the stage 50, the UV lamp holder 1111 is caused to emit light (step 1206). As a result, the ultraviolet ray of the number of vibrations from the UV lamp holder 1111 can be emitted from the photoelectron emitting material 111 藉 by the energy quantum hi &gt; (h is a pianck s constant). The photoelectrons e_ are irradiated onto the positively charged wafer W by the negatively charged photoelectron emitting material 1110, and the wafer w is electrically neutralized. Thereby, the secondary electron line can be imaged on the detector 77Q without being substantially affected by the positive potential of the wafer w. As described above, it is detected by the detection 770: the secondary electron beam image which has been relieved of the image obstacle by the electrically neutralized wafer W, and is converted and output to the digital image data (step 2208). Next, the control unit 1A16 executes the defect detection processing of the wafer w based on the detected image data in accordance with the defect detection program 1009 (step 1210). In the defect detecting process, when the control unit 1016 has a plurality of wafers having the same crystal grain, as described above, the defective portion can be extracted by comparing the detected images of the same crystal grains detected. It is also possible to compare the reference two under-electron image of the defect-free wafer previously stored in the memory with the actually detected secondary electron-line image to automatically detect the defective portion. At this time, the detected image can be displayed on the CRT1〇15, and the portion determined to be the defective portion is displayed and displayed, and the processor can perform final evaluation on whether the wafer W does have a defect. Specific examples of the defect detection method will be described later. • The defect detection processing result in step mo, judging that the wafer w has the missing paper size i§___LNS) A4 specification (2) Gx297^ Muscle 31276^

^---------^--------- (Please read the phonetic transcription on the back? Please fill out this page again) #· 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 &quot;&quot; ----^------ — V. Invention Description (l〇3) In the trapping time (step 12 12 affirmative judgment), the processor issues a warning that the defect exists (step 1218). The warning method may be, for example, a display for displaying the presence of the notification defect at the CRT1〇15 or an enlarged image of the defective pattern 1 01 7 at the same time. The defective wafer may be directly taken out from the sample chamber 32 and stored in a storage position different from the defect-free wafer (step 9). When the result of the defect detection processing in step 1210 is that there is no defect in the wafer boundary (determining in step 1212), the wafer w currently being inspected is judged to confirm whether or not there is an area that must be inspected (step 12丨4). ). If there is an area that must be inspected (certainly determined in step 1214), the stage 50' is driven and the wafer w is moved so that other areas that must be inspected can enter the illumination area of the primary electron line (step 12 16). Thereafter, returning to step 1202, the same processing is repeated for the other inspection areas. When there is no area to be inspected (negative determination in step 1214), or after the defective wafer removal process (step 1219), it is determined whether the wafer W currently being inspected is the final wafer, that is, not shown. Whether or not unchecked wafers remain in the loader (step 1220). When the wafer is not the final wafer (NO in step 1220), the wafer to be inspected is stored in the designated storage area, and the uninspected new wafer is mounted to the stage 5 (step 1222). Then, returning to step 12〇2, the same process is repeated for the wafer. When the wafer is the final wafer (definitely judged at step 1220), the wafer to be inspected is stored in the designated storage and the entire process is terminated. As long as the secondary electron image detection (step 12〇6) can be performed while avoiding the positive charging of the wafer W and the image disturbance is reduced, the UV photoelectron irradiation can be performed at any time or in any period (step 1206). ). In I—^---------. (Please read the phonetic on the back? Please fill out this page again.) This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 103 312767 1286776 Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumer Cooperatives, Printing A7 V. Inventions (104) During the processing of Figure 27, the uv lamp holders can be maintained in a state of illumination or periodically. Repeatedly illuminate or turn off the light. In the latter case, the illuminating time can be started as shown in Fig. 27, or before the execution of the secondary electron beam imaging (step 12〇4), or before the execution of the secondary electron beam irradiation (step 1202). . It is preferred to continue UVt electron irradiation at least during the secondary electron detection period. However, if the wafer can be fully neutralized before or during the secondary electronic shadow, the photoelectron irradiation can also be stopped. In the 28th (a) to (c), a specific example of the defect detecting method in step 121A is shown. First, in the 28th (4)th picture, the first detected grain image 1231 and the second detected other grain image 1232 are displayed. When the other detected image is judged to be similar to or similar to the first crystal image 1231, it is determined that the 1233 portion of the second crystal image 1232 has a defect, and the defective portion can be detected. The figure in Fig. 28(b) shows an example of detecting the line width of the pattern formed on the wafer. The actual secondary electron intensity signal when scanning the actual pattern 1234 on the wafer in the direction of 1235 is 1236, and the signal can continuously exceed the width 1238 of the portion of the predetermined level 1237, which is detected as the line width of the pattern 1234. . Thus, when the detected line width exceeds the specified range, it is judged that the pattern has a defect. In Fig. 28(c), a diagram showing the contrast of the potential of the pattern formed on the wafer is shown. In the configuration shown in Fig. 24, an axisymmetric electrode 1239 is provided above the wafer w, for example, the potential of the wafer potential 〇v is supplied to the tip. At this time, the equipotential surface of _2V exhibits m. Shown: ϋ Zhang scale applies Chinese National Standard (CNS) A4 specifications (2) Q χ 297 public f, AU4 312767- — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — ----- fPlease read the phonetic transcription on the back first? Matters to fill out this page} Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1286776 A7 — - B7 V. Invention description ((10)) &quot;~ Shape. Here, the patterns 1241 and 1242 formed on the wafer are set to potentials of -4 V and 0 V, respectively. At this time, since the secondary electron ' emitted from the pattern 1241 has a potential plane of _2 V and corresponds to the upward velocity of the kinetic energy of 2 eV, the potential barrier rib 124 超越 can be exceeded, as shown by the way 1243, by the electrode 1239 It was taken out and detected in the detector 77. On the other hand, the secondary electrons emitted by the pattern 1242 do not exceed the potential barrier of _2V, and are recovered to the wafer surface as indicated by the way 1244, and cannot be detected. Therefore, the detected image of the pattern 1241 is bright, and the detected image of the pattern 1242 becomes dark. Thereby, potential contrast can be obtained. If the name brightness and potential of the detected image are corrected in advance, the potential from the pattern of the detected image can be detected. The defective portion of the pattern can be evaluated by the potential distribution. Fig. 25 is a view showing a schematic configuration of a defect inspection apparatus including a precharge apparatus according to another embodiment of the present invention. In addition, the same components as those in the embodiment of Fig. 24 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the present embodiment, as shown in Fig. 25, the photoelectron emitting material is not applied to the glass surface of the UV lamp holder mi. Instead, the photoelectron emitting plate 1110b is disposed above the wafer W in the sample chamber 322, and the UV lamp holder 1111 is disposed at a position where the emitted ultraviolet rays are irradiated on the photoelectron emitting plate 1110b. The photoelectron emitting plate 111〇b is connected to the negative electrode of the power source 13. The stage 50 is in contact with the positive electrode of the power source. The photoelectron emitting plate ni〇b is made of a metal such as Au, and can also be used as a sheet to which the metal is applied. The effect of the embodiment of Fig. 25 is the same as that of the embodiment of Fig. 24. In the embodiment of Fig. 25, photoelectrons can also be irradiated onto the surface of the wafer W in a timely manner, so that it can be obtained in the same manner as in the embodiment of Fig. 24'. I-^ « — — — — — — I— (Please read the notes on the back and fill out this page) This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 105 312767 1286776

Effect. Fig. 26 is a view showing the schematic configuration of a defect inspection apparatus including a pre-charging device according to another embodiment of the present invention. In addition, the same symbols as those of the embodiment of Figs. 24 and 25 are denoted by the same symbols (please read the precautions on the back side). The detailed description is omitted. In the embodiment of Fig. 26, as shown in Fig. 26, a transparent window member m2 is provided on the side wall of the sample chamber 32, and the uv lamp holder lm is disposed outside the sample chamber 32 to be radiated by the UV lamp holder 1111. The ultraviolet ray can be irradiated to the photoelectron emitting plate 111 〇b disposed above the wafer W in the sample chamber 32 through the window member 1112. In the embodiment of Fig. 26, since the UV lamp holder 1111 is disposed outside the sample chamber 32 in a vacuum state, it is not necessary to consider the vacuum resistance of the UV lamp holder 1111, and the implementation of Figs. 24 and 25 is performed. Compared with the form, the choice of the uv lamp holder ηΐι can be increased. The other functions of the embodiment of Figure 26 are printed in the same way as the embodiment of Figures 24 and 25. In the embodiment of Fig. 26, the photoelectrons can be irradiated onto the surface of the wafer W in a timely manner, so that the same effects as those of the embodiment of Figs. 24 and 25 can be obtained. The above is the embodiment, but the defect inspection apparatus provided with the precharging device of the present invention is not limited to the above embodiment, and can be arbitrarily changed without departing from the scope of the invention. For example, in the sample to be inspected, the semiconductor wafer W is exemplified, but the sample to be inspected of the present invention is not limited thereto, and any defect that can be detected by an electronic wire may be selected. For example, it is also possible to apply the Chinese National Standard (CNS) A4 specification (210 X 297 public) on the sheet forming exposure. 106 312767 1286776

A mask of a pattern or the like is used as an inspection object. (Please read the precautions on the back and fill out this page.) ^In addition, the electronic wire device for defect inspection has the configuration shown in Fig. 24 to Fig. 26, but the electro-optical system can be arbitrarily changed. For example, the electron beam irradiation mechanism (721, 722) of the defect inspection device of the figure is a tilting manner, and the electron beam is incident on the surface of the wafer w from above, but the deflection mechanism of the electron beam may be disposed under the electrostatic lens 741. The secondary electron line can be incident on the surface of the wafer w in a vertical manner. In such a biasing mechanism, for example, a Wiener filter which biases the primary electrons by an ExB which is orthogonal to the magnetic field and a magnetic field can be used. Further, in the mechanism for emitting photoelectrons, any mechanism other than the combination of the UV lamp holder U11 and the photoelectron emitting member ui 第 or the photoelectron emitting plate 111 Ob shown in Figs. 24 to 26 can be used. Further, the process of the flowchart of Fig. 27 is also not limited. For example, in the step 1212, the defect which is determined to have a defect is not subjected to the defect inspection in another region, but the process may be changed to detect the defect for all the regions. In addition, if the area where the electron beam is irradiated can be enlarged, and the entire inspection area of the sample is covered by the illumination of the Intellectual Property Department X Consumer Cooperative of the Ministry of Economics, the steps 12J4 and 1216 may be omitted. Figure 27 shows that, in step 1212, when it is determined that the wafer is defective, the processor may be immediately warned and processed afterwards in step 1218 (step 1219), but after batch processing is completed in the recorded defect information (step After the 1220 is definitely judged, the processing flow can also be changed to report the defect information of the defective wafer. As detailed above, 'this paper scale is applied to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) according to the embodiment of Figure 24 to Figure 26. 107 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumption Cooperative Printing A7 B7 V. Invention Description (108) Defect inspection equipment and defect inspection method, because the sample is supplied with electrons having lower energy than the primary electron beam, it can reduce the surface of the sample which occurs when secondary electrons are emitted. The positive charging can eliminate the image obstacle of the secondary electron line generated during charging, and has an excellent effect of performing sample defect inspection with higher precision. According to the apparatus manufacturing method of the defect inspection apparatus using the Figs. 24 to 26, since the defect inspection of the sample can be performed by the above defect inspection apparatus, it is possible to obtain a good effect of improving the yield and preventing the shipment of the defective product. In the twenty-fifth diagram, the potential application mechanism 83, based on the fact that the secondary electron information (secondary electron generation rate) emitted from the wafer depends on the wafer potential, is carried out by the carrier on which the wafer is placed. The setting table of the stage applies the potential of the soil number V to control the generation of secondary electrons. Further, the potential application mechanism has a function of decelerating the energy of the illuminating electrons and applying illuminating electron energy of about 〇0 〇 to about 500 eV to the wafer. As shown in FIG. 29, the potential application unit 83 includes a voltage application device 831 that is electrically connected to the mounting surface 541 of the stage device 50. A charge investigation and voltage determination system (hereinafter referred to as a survey and determination system) 8 32. The investigation and determination system 832 includes a monitor 833 electrically connectable to the image forming unit 763 of the detection system 76 of the electro-optical device 70, a processor 834 connected to the monitor 833, and a monitor 833 CPU835. The CPU 835 can supply a signal to the aforementioned voltage applying means 831. — — — — — — — — — · 1111111 ^ ·11111111 (Please read the notes on the back and fill out this page.) This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 108 312767 1286776 A7 V. INSTRUCTION OF THE INVENTION (1〇9) The above-described potential application mechanism is designed such that the object to be inspected, that is, the wafer, is searched for a potential that is not easily charged, and the potential application mechanism is applied. In the method of detecting and detecting the electrical defects of the sample, the method of electrically insulating the part which is originally insulated from the original (and reading the back of the page) and the part of the power supply state may be different. In other words, by applying a charge to the sample in advance, a voltage difference is generated between the voltage of the portion which is originally electrically insulated and the voltage which is electrically insulated from the original portion but becomes energized for some reason, and then a voltage difference is generated. Then, by irradiating the light beam of the present invention, data showing the voltage difference is obtained, and the acquired data is analyzed to detect the power-on state. In the mechanism of Fig. 30, the electron beam aligning mechanism 85 is provided at a plurality of positions on the side of the wafer mounting surface 541 on the rotary cymbal 54, and is provided with a complex Farady cup for detecting beam current. 85i and. The Faraday Cup 851 is used for beamlets (about (four) m)' and the Faraday Cup 852 is for thick beams (about 0 30 &quot; m). The Faraday cup (5) for the beamlet is gradually transferred to the rotary table 54 to detect the fixed beam profile &quot;Printed by the Ministry of Economic Affairs, the Ministry of Finance, and the Consumers' Cooperatives. For the thick beam, the Faraday Cup 852 can measure the total current of the beam. Ά ^ 夏去拉弟杯851

And 852 are disposed at the same position as the upper surface of the wafer W placed on the mounting surface 66 L* on the upper surface. By this, the electronic-human electron line can be constantly monitored. The reason for its monitoring is not that the electronic test _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The device branch control device 87 uses the stage device 5 to determine the wafer from the standard (cns) a4 specification (10) x 297 312767 1286776 A7 __B7 5. The invention description ((10)) in the position of the electro-optical device 70 Controllable: a wide-angle field of view of the wafer by the optical microscope 871 is applied to the microscope to obtain a schematic alignment of the wafer (the detection is performed at a lower magnification than when the sub-system is used); and the electro-optical device 70 is utilized. High-magnification alignment used in the electro-optical system; focus adjustment =: map: calibration, etc. The reason for using the optical system to inspect the second at low magnification is that electrons must be used in order to automatically perform pattern inspection of the wafer 1 When wafer observation and wafer alignment are performed in a narrow field of view, the electronic mark is used to easily detect the calibration mark. The optical microscope 871 is placed on the body (movably placed in the casing)' The light source that allows the optical display to operate in the microscope is also provided in the casing, although not shown. The electron optical system of the 捍 捍, 玄 加 @ 进 进 进 进 进 进 进 进 进 进 进Light It is shared by the I-light system 72 and the secondary optical system 74). The schematic diagram of the structure is as shown in the figure. If the observed point on the wafer is viewed at a low magnification, it can be carried by The stage device 50...53 moves in the X direction to move the observed point of the wafer into the field of view of the optical microscope. The optical microscope 871 identifies the wafer with a wide-angle field of view, and then wafers by CCD872 The location must be displayed on the monitor 873 to slightly determine the viewing position. ^ At this time, the magnification of the optical microscope can be adjusted from the low rate to the high magnification. ^ Second, equivalent to electronic The distance between the optical axis of the optical device 70 and the preceding axis of the optical microscope 871 "shifts" the stage device 仂, and moves the observed point on the wafer determined by the optical microscope to the electro-optical device. Field of view. At this time, the distance between the axis g | 〇3-〇3 of the electro-optical device and the optical axis 〇4_〇4 of the optical microscope 871 (Applicable to the Chinese National Yang (3) (10) specification ^^^ at the actual paper scale) 110 312767 ^ Μ------------------ (Please read the note on the back and fill out this page) #- 1286776 Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative, Print A7 V. DESCRIPTION OF THE INVENTION (111) In the embodiment, only in the direction along the X-axis, the position of the rain I &gt; the pottery will be offset, and the position may be biased in the Y-axis direction and the Y-axis direction.

Sand) 'Because δ X is a predictive value, so just move it (5 X value, # moves from the point of observation to the recognition position from the Γ. After the action of moving the observed point to the recognition position) The optical system semgraphs the observed point at a high magnification and memorizes the image, or displays it on the monitor 765 by the CCD 761. As described above, the high-magnification of the electron optical system is used to monitor the wafer. After the device is detected by a known method, the wafer is offset from the center of rotation of the rotating table 54 of the stage device 50, and the position corresponding to the direction of rotation of the wafer is shifted from the optical axis of the electron optical system 〇3_〇3. The deviation value in the direction of rotation occupies 0, and the positional deviation between the 乂-axis and the Y-axis direction of the specified pattern associated with the electro-optical device is detected. Then, based on the detected value, and the separately obtained inspection mark set on the wafer Data, or information related to the shape of the wafer pattern, etc., controls the operation of the stage device 50, and performs wafer calibration. Vacuum evacuation vacuum evacuation system is a vacuum pump; vacuum valve; vacuum gauge Vacuum The vacuum is exhausted to the electron optical system, the detector portion, the sample to the load lock chamber, and the vacuum valve is controlled to achieve the necessary degree of vacuum. Normally, the vacuum monitor is operated. In case of abnormality, the interlocking function is used to perform emergency control such as isolation valve to ensure the degree of vacuum. The vacuum pump is a main molecular exhaust turbomolecular pump. On the rough suction, a spiral dry pump is used. Inspection place (electronic line irradiation The house capacity is 10_3 to 1〇·5ρα, and ideally the following one-port 1's 4' paper scale applies to the Chinese National Standard (CNS) k4 specification (χ 297€€--^ ----- -------装---------Book---------· (Please read the notes on the back and fill out this page) 1286776 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printing A7 - ~——-SZ______ V. Invention description (m) to l〇a5Pa is most practical. The control system is mainly composed of the main controller, the control controller, and the stage controller. With a human-machine interface, the operation of the processor is carried out here (various Inputs such as instructions/commands, recipes, etc., the start of the inspection, the switching between the automatic and manual check modes, and the input of all the instructions required in the manual check mode. Others, contact with the factory main computer Control of vacuum exhaust system, sample transfer of wafers, position control, control of other control controllers or command to the stage controller, or reception of tribute, etc. Further, the present invention further includes a stage vibration correction function that acquires a video signal from an optical microscope, feeds the stage fluctuation signal to the electro-optical system to correct image deterioration, and detects a Z direction of the sample observation position ( The displacement of the secondary optics axis direction) is then fed back to the electro-optical system, which automatically corrects the focus of the auto focus correction function. The reception of the feedback signal of the electro-optical system and the signal from the object ; are performed by the control controller and the stage controller, respectively. The control controller is mainly responsible for the control of the electronic line optical system (high-precision power supply control such as an electron gun, lens, calibrator, Wiener filter, etc.). Specifically, control is performed such as automatic voltage setting of each lens system or calibrator corresponding to various magnifications, and control (step control) for automatic voltage setting of each lens system or calibrator corresponding to various processing modes. In order to change the magnification, the predetermined electron current can still be irradiated to the irradiation area. I---------^-----1—. (Please read the notes on the back and fill out this page.) This New Zealand Scale Stab Tissue Standard (CNS) A_4 Specification (210 X 297) £7 112 312767 1286776 A7 Ministry of Economic Affairs Intellectual Property Officer 5. Inventive Note (113, Stage Controller, which can mainly perform related control of the mobile stage, and can perform precise X-direction and γ-direction movement ( ±0.5// Π1 error)α In addition, in the case of the load stage, the rotation direction can be controlled (0 control) in the case where the error accuracy is within about 3 seconds of the soil. When the electron beam apparatus of the present invention operates, the object substances are brought close to each other (the particles generated in the vicinity of the surface are charged), and the target substance is floated and attracted to the high pressure region, so that the organic substance is deposited on the electron beam. Among the various electrodes formed or deflected, the insulator formed by the surface charge is gradually deposited, which may adversely affect the formation of the electron beam or the deflection mechanism. Therefore, the deposited insulator must be removed periodically. The periodic removal of the insulator, Means that the electrode near the region of the deposited insulator is used to produce hydrogen, oxygen or fluorine in a vacuum or a compound containing the compounds hf, 〇2, η2〇, cmFn, etc., to maintain the space (4) plasma potential of the electrode surface. The potential of the sputum (a few kV, for example, 20V to 5kv) is removed by oxidation, hydrogenation, and fluorination of organic substances. The device of the interceptor is stunned by you---------1 I--------^---------. (Please read the precautions on the back and fill out this page.) Example 32 shows the stage device in the detection device of the present invention. Above the Y-direction movable portion 95 of the deformation-printing stage 93, a partition wall 914' that is horizontally extended in the +Y direction and the _Y direction (the left-right direction in the 帛32[B] diagram) is installed. Between the X-direction movable portion and the upper portion, the electric gate 950 is formed. In addition, the 'X-direction movable portion 9... is also applicable to the Chinese National Standard (CNS) A4 specification (10) 297 297 public. 113 312767 1286776 312767 A7 V. INSTRUCTIONS (114) The same partition wall 912 is + X square (10,000 white (in the 32nd [A] picture is the left and right Stretching, and a gate 951 is formed between the pq and the top of the stage 97. The stage 97 is fixed to the bottom wall of the casing % in a known manner. Therefore, regardless of the sample table 94, When the position is moved, the gates 950 and 951 are formed, so that the movable portion 动r moves. When the P 95 and 96 move, even if the gas is released from the guide surface 96a or 97a, the milk body is due to the gate 950 and In 951, the movement of the released gas is prevented, so that the pressure rise of the space 924 near the sample of the ", and the laser beam is controlled to be very small. The movable portion 9 5 of the stage is opposite to the side and the lower side and below the movable portion 96, as shown in Fig. 56, forming a differential displacement groove around the hydrostatic bearing 90 due to When the gates 950 and 951 are formed by the ditch, the animals discharged from the guide surface are exhausted by the differential exhaust portions. As a result, the pressure in the interior of the stage and the working rooms 913 and 915 is higher than the pressure in the processing chamber C. Therefore, the exhausting exhaust groove 917 or 918 performs the exhausting of the door Q11 + by the difference ordering room 913 &amp; 915, and the vacuum exhausting portion can be set by another lamp to reduce the pressure of the space 913 or 915, and can also be lowered. The sample rose near the 924. Based on the above, the vacuum exhaust passages 91-1 and 91_2 are provided, and the row of the rolling passages penetrates the stage 97 and the body 98 to the outside of the casing 98. Further, the exhaust passage is opened in the X-direction movable portion 96 toward the lower side of the X-direction movable portion 96. If the partition walls 912 and 914 are provided, the processing chamber must be enlarged to prevent the processing chamber C from coming into contact with the partition wall. Retractable material or, made as a dividing wall to improve this point. In this embodiment, the partition wall is made into a bellows shape by the rubber, and the end portion of the partition wall 914 in the moving direction is fixed: the paper scale is applicable to the Chinese National Standard (CNS) A4 ^ -------- (Please read the note on the back and then fill out this page) 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention description (out) = direction movable part 96' and the partition wall 912 is fixed to the housing% Fig. 33 shows a second modification of the stage device. In this embodiment, the front end portion of the lens barrel, that is, the charged beam irradiation, and the periphery of 72 constitute a cylindrical partition wall 916 which forms a shutter with the upper surface of the test (4). With this configuration, even if the gas is released from the n stage, the pressure of the process to c_ rises, and the partition 924 interior 924 can be separated by the partition 916 and evacuated by the vacuum piping (four), and therefore, the treatment chamber portion and the partition The pressure I is generated between the inner (four) 924 and the upward pressure of the inner space 924 of the partition wall. The gap between the partition and the sample surface may vary depending on the degree of maintenance of the pressure between the processing chamber C and the irradiation portion 72, but it is most appropriate for a few or even a few. The partition wall 916 is connected to the vacuum piping by a known method. Further, in the charged beam irradiation apparatus, a high voltage of about several is applied to the sample w, and if a conductive material is placed on the sample seventh, the discharge may be caused. At this time, if a ceramic insulator or the like is used as the material constituting the partition wall θα, discharge between the sample W and the partition wall 916 can be avoided. Further, the connecting member material disposed around the sample W (wafer) is "a plate-shaped adjusting member fixed to the sample stage 94, and the connecting member is set to the same height as the wafer, even if the charged beam is irradiated onto the wafer. In the sample end portion, a small slit 952 is also formed at the front end of the partition wall 916. Thereby, no matter where the charged beam is irradiated to the sample w, the end portion of the partition wall 916 forms a minute slit 952' to stabilize Maintain the pressure between the front end of the lens barrel 924. m This paper size applies to the Chinese National Standard (CNS) A4 specification (21〇X 297 public) 312767 — — — — — — — — ^ i — — — — — — ^« 1------. rtt first read the note on the back and fill in this page) 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention Description (116) Figure 34 shows other variants. The partition wall 919 of the charged beam illuminating gas structure of 71. The partitioning pattern is surrounded by the built-in differential row 赉忐 "1 net, the rear Q90 cut: the corpse back 919 has a cylindrical shape" and the inside is opened &gt; The circumferential groove 920, the exhaust passage ^ 1L ^ U The circumferential groove extends to the upper side. The exhaust passage is connected to the vacuum pipe 923 via the internal space 10,000 angstroms. The lower end of the separator 919 and the μ + square of the sample w form a number + V m or even a few mm In this configuration, with the movement of the load Α μ σ, the gas is released from the stage, causing the pressure in the process chamber C to be different, and the gas is released into the front end, that is, charged. When the beam irradiation unit 72 is used, the wall 919 narrows the gap with the sample w to make the conductivity smaller, and prevents the gas from flowing to reduce the inflow. Further, since the inflowing gas is discharged from the circumferential groove 92〇 to the vacuum piping, the chance of the gas flowing into the space 924 of the charged beam irradiation portion 72 is greatly reduced, and the pressure of the lightning strike irradiation unit 72 can be maintained at an ideal level. In high vacuum. Figure 3 5 shows another modification. The partition wall 926 is provided around the C and ▼ electric beam irradiation sections 72, and the charged beam irradiation section 72 is separated from the processing chamber c. The partition wall 926 is connected to the refrigerator 930 through a support member 929 formed of a material having good thermal conductivity such as copper or aluminum, and is cooled to -1 〇 (rc or -2 〇〇 。. The heat conduction between the partition wall 926 that blocks the cooling and the lens barrel is made of a ceramic or a resin material having poor thermal conductivity, etc. Further, the member is formed of a non-insulator such as ceramic, and is prevented from being formed on the lower end of the partition wall 926. The function of the discharge of the sample W and the partition wall 926. --! 丨! Loading · ---- II 丨 丨丨 丨丨 丨丨丨 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( (中_家标准(CNS)A4规格(21G X 297 公发116 312767 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 V. Invention Description (117) With this composition 'can be blocked by the partition wall 926 By processing the entanglement of the charged beam illuminating part; from the χ 虱 虱 虱 刀 , , , , , 也会 也会 也会 也会 也会 也会 也会 也会 926 926 926 926 926 926 926 926 926 926 926 926 926 926 926 926 926 926 926 ▼ ▼ ▼ ▼ ▼ ▼ ▼ ▼ For the cold machine, it can be used by liquid Cooling or He cooling; various cold-air machines such as the east machine and the pulse tube type refrigerator. Fig. 36 shows other modifications. - The two movable parts of the stage 93 are provided with the same knife as shown in Fig. 32. The stepping table 912 914 'the sample stage 94 can be separated from the inside of the stage inner space 913 and the processing chamber c by the partition walls 950 and 951 even if the sample stage 94 is moved to an arbitrary position. A partition wall 916 similar to that shown in Fig. 33 is formed around the beam irradiation portion, and the inside of the processing chamber c and the space 924 in which the charged beam irradiation portion 72 is provided are separated by 952. Therefore, when the stage moves Even if the gas adsorbed to the stage is discharged to the space 913 and the pressure of the portion rises, the rising pressure of the processing chamber c is lowered, and the rising pressure of the space 924 is also controlled to be lower. The space 924 of the illuminating portion is maintained at a low pressure state. Further, as shown by the partition wall 916, the partition wall of the differential venting mechanism and the partition wall 926 cooled by the refrigerator shown in Fig. 34 can be used.汐24 is stably maintained at a lower voltage state. With the above embodiment, The following effects can be obtained: (1) The stage device can exhibit a high-precision positioning function in a vacuum. The pressure at the charged beam irradiation position is hard to rise. That is, the high-precision treatment of the charged beam of the sample can be performed. ------------Μ---------- ^--------- (Please read the notes on the back and fill out this page)

This paper scale applies to the China National Standards (CNS) A4 specification (210 X 297 public hair 312767 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1286776 A7 &quot;&quot; ------- one _B7_____ five, invention Explanation (118) (2) The gas released by the hydrostatic bearing can hardly flow into the charged beam irradiation area through the partition wall. This makes it possible to stabilize the vacuum of the charged beam irradiation position. (3) The gas is not easily passed. The charged beam irradiation area makes it easier to maintain the stability of the vacuum in the charged beam irradiation area. (4) The vacuum processing chamber is divided into three chambers, a charged beam irradiation chamber, a static pressure bearing chamber, and an intermediate chamber, by a small electric conductor. For each chamber pressure, a vacuum exhaust system is formed in the laser beam irradiation chamber, the intermediate chamber, and the static friction bearing chamber according to the low order. The pressure variation of the intermediate chamber can be controlled lower by the partition wall. The pressure fluctuation of the beam irradiation chamber is further reduced by another partition wall to reduce the pressure fluctuation to such an extent that no substantial problem is formed. (5) When the stage is moved, the pressure can be controlled. (6) The pressure rise can be further controlled when moving the stage. (7) Available due to the high-precision stage positioning performance and the vacuum-stabilized inspection equipment in the charged beam irradiation area. Inspection equipment with high inspection performance and contamination-free sample. (8) High-precision stage positioning performance, and an exposure device with stable vacuum in the charged beam irradiation area, thus providing high exposure accuracy. (9) A semiconductor device can be fabricated by using a high-precision stage positioning performance and a device with a stable vacuum in a charged beam irradiation region to form a fine semiconductor circuit. It can be clearly seen that the stage device of Figures 32 to 36 is suitable for — — — — — — — — — 1111111 ^ · 111111! AVI (Please read the note on the back and fill out this page) The scale applies to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 118 312767 1286776 A7 B7 V. Description of the invention (ll9) For the stage 50 shown in Figure 1. Refer to ",, 37th to 39th. Other embodiments of the χγ stage of the present invention will be described. The conventional example for displaying Fig. 55 is the same as the reference number of the constituent members of the eight-way embodiment in the embodiment. This Fig. 37 shows the χγ stage. In the other embodiment, the front end portion of the lens barrel 7 i of the sample-formed charged beam, that is, the charged beam irradiation unit 72 is attached to the casing 98 which is divided into the vacuum processing chamber c. The lens barrel 71 is disposed directly below the lens barrel 71. The sample w placed on the moving table movable in the direction (the left-right direction in FIG. 37) of the χγ stage 93 is placed. In the sample w, the charged beam can be accurately irradiated to an arbitrary position on the surface of the sample by a high-precision tantalum stage. The pedestal 906 of the cymbal stage 93 is fixed to the bottom wall of the casing 98, and the gantry which is movable in the weir direction (the vertical direction to the paper surface in Fig. 37) is mounted on the pedestal 906. Both sides of the sill 95 (left and right sides in the second figure) are formed with protrusions projecting into the grooves, wherein the grooves are formed on a pair of gamma-direction guiding devices 9 that are placed on the pedestal 906. Γh and 907b on the γ stage side. The groove extends in a direction slightly longer than the gamma directional guide. It protrudes from the protrusion in the groove, and the lower and side knives further have static pressure pumps 9Ha, 909a, 911b, and 9〇9b of a known structure, and the high pressure gas is discharged by the static pressure bearing to make the γ stage 95 The γ-direction guiding devices 9〇7a and 9〇7b can be supported in a non-contact manner and smoothly moved back and forth in the Υ direction. Between the pedestal 906 and the Y-stage 95, a linear motor 932 of a known structure is arranged. With the linear motor, it is possible to apply the Chinese standard (IigTHTs) A4 gauge; i each (10) x 297 public hair a) 119 31 0 Μ · ^--------- (Please read the phonetic on the back? Please fill out this page again)

To drive the same pressure gas, the high-pressure gas supply flexible hose 934 is supplied with γ, °, and through the gas passage (not shown in FIG. 2) formed in the crucible. 911&amp;, 9〇 or even 9m, Όπι压气* to the high-pressure gas of the hydrostatic bearing, between the micro-Cullen formed between the guide surface opposite to the Y-direction guide to the tens of micro-cash The slit is ejected to perform the function of correctly positioning the corresponding guide surface of the stern in the X direction and the ζ direction (up and down direction in Fig. 37). 312767 1286776 V. DESCRIPTION OF THE INVENTION (Gal) The cymbal 96 is placed on the cymbal in a movable manner in the yaw direction (the left and right direction in Fig. 37). A pair of X-direction guiding devices 908a and 908b (illustration 908a only) having the same structure as the slanting direction guiding device 9〇7a and the squatting device are disposed above the stencil 95. A groove is formed on the side of the X stage facing the x-direction guiding device, and a side portion of the sill (facing the side of the 引导-direction guiding surface) forms a projection protruding in the groove. The groove extends along the entire length of the X-direction guiding device. The hydrostatic bearings 911a, 9〇9a, 91〇a, 9Ub, 9〇9b, 910b are disposed in the same arrangement on the upper, lower, and side surfaces of the protrusions of the X-direction stage 96 that protrude in the groove. The same static bearing (not shown). A linear motor 933 having a known structure is disposed between the platform 95 and the other unit, and is driven by the linear motor in the χ direction. The x-unit % is supplied with a high-pressure gas by a flexible hose 93], and a high-torn gas is supplied to the static-grinding bearing. The high-dust gas is sprayed by the static dust bearing toward the "guide surface" of the X-direction guiding device, and the high-precision non-contact method is supported by the high-precision non-contact method, and the support is in the direction of the υ (4) relative to the n-empty treatment to the C utilization connection. The vacuum piping 9!9, 920a, and 920b of a vacuum pump or the like of a known structure is exhausted. The side of the piping 92〇a, 92〇b is applicable to the paper size (CNS) A4 specification (10) x 297 1)

------------^---------^---------^__wi. (Please read the notes on the back and fill out this page) 1286776 A7 V. INSTRUCTION OF THE INVENTION (m) In the interior of the empty processing chamber, the high-dust gas from the XY stage is placed through the pedestal 9〇6, and the relocation force in the processing chamber is close to the vacuum to prevent vacuum. (4) (4) The front end of the bearing is high in the gas and gradually on the lens barrel, that is, the charged beam irradiation part is provided with a differential exhaust mechanism 925, even if it is straight _ # hp ^ I 1 The pressure of c: the pressure of the beam irradiation portion space 93 is still maintained at a relatively low pressure, that is, the iko-shaped member 9 2 5 of the differential exhaust mechanism 9 2 5 installed around the charged beam irradiation portion 72. Below it (the sample on the % side of the sample has a small gap (a few microcoulombs to hundreds of micro-banks) 94 〇 in order to locate in the casing ' and form an annular groove 927 under it. 927 is connected to a vacuum pump or the like (not shown) by an exhaust pipe 928. Thereby, the minute slit 940 can be exhausted by the annular groove 927 and the exhaust port 928 even if the gas molecules are vacuumed. The chamber c is intended to flow into the space 930 enclosed by the annular member 926, and is also discharged. Thus, the pressure in the charged beam irradiation portion space can be maintained at a low pressure state to perform problem-free charged beam irradiation. The double-structure or triple-structure can be made by the pressure in the processing chamber and the pressure in the charged beam irradiation space 930. The high-pressure gas supplied to the hydrostatic bearing is generally dry nitrogen gas, but as high-purity inactive as possible. Gas is preferred because if the gas contains impurities such as moisture and oil, the impurities may adhere to the surface of the inner surface of the casing or the components of the stage that are divided into the vacuum processing chamber, thereby deteriorating the degree of vacuum or adhering to the surface of the sample. However, the degree of vacuum of the charged beam irradiation space is deteriorated. In the above description, the sample W is usually not directly placed on the X stage, and the paper size such as 312767 is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). )

[286776 V. Invention description (m) is placed on a sample 具备 ^ Α 具备 具备 具备 具备 可 可 可 可 可 可 可 可 可 可 可 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但The helmet has a helmet and a J: structure, and the gist of the present embodiment is not..., ",, stomach", so it is omitted to simplify the explanation. The above-mentioned charged Dongpu Fan ^ ^ &amp; device can directly use the stage of the static pressure bearing that can be used in the atmosphere, the field φ soil can therefore be used for the charged beam device at the same cost and size. Taiwan, you can achieve the same high-precision load stage as the south precision stage used in exposure equipment. The above-described static pressure guiding device configuration or actuator (linear motor) is only one of the embodiments, and J /, the static pressure guiding device or the actuator which can be used for the atmosphere, can be applied. Fig. 38 is a view showing numerical examples of the size of the annular member of the differential exhaust mechanism and the size of the annular groove formed in the member. In this example, the annular groove has a dual structure of 927a and 927b, which are spaced apart in the radial direction. The flow rate of the pressurized gas supplied to the hydrostatic bearing is generally about 2 〇L/min (at atmospheric pressure). It is assumed that when the vacuum processing chamber c is exhausted by a dry pump having an inner diameter of 5 mm and a length of 2 m and a dry pump having an exhaust speed of 20,000 L/min, the pressure in the vacuum processing chamber is about 16 〇pa (about 1·2Τοιτ). At this time, if the size of the annular member 926 and the annular groove of the differential exhaust mechanism is set to be as shown in Fig. 38, the pressure in the charged beam irradiation space 930 can be changed to 10-4 Pa (1 〇). -6T〇rr). Figure 39 shows another embodiment of the χγ stage. The vacuum processing chamber C, which is divided by the casing 98, is connected to the dry vacuum pump 953 via vacuum piping 974, 975. The annular groove 927 of the differential exhaust mechanism 925 is connected via a vacuum pipe 970 connected to the exhaust port 928, with an ultra-high vacuum pump — I. 1111111 ^ « — — — — — — I— (Please read the notes on the back and then fill out this page) Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Print this paper scale Applicable to China National Standard (CNS) A4 Specification (210 X 297 mm) 122 312767 1286776 Economy Ministry of Intellectual Property Bureau employee consumption cooperative printing 123 312767 A7 V. Invention description (123) Turbomolecular pump 951 is connected. Further, inside the lens barrel 71, it is connected to the turbo molecular pump 952 via a vacuum pipe 971 connected to the exhaust port 710. The turbomolecular pumps 951, 952 are connected to the dry vacuum fruit 953 by vacuum piping 972, 973. (In this figure, the vacuum pump is used as the vacuum pump for the turbo pump and the vacuum pump for the vacuum chamber, but it can also be used for the high-pressure gas flow of the hydrostatic bearing supplied to the XY stage. The vacuum processing chamber volume or internal surface area 'vacuum pipe inner diameter or length is exhausted by a dry vacuum pump of another system.) High-purity inert gas (N2 gas, Ar gas, etc.) is supplied to the flexible hoses 921 and 922. The hydrostatic bearing of the χγ stage 93. The gas molecules ejected by the hydrostatic bearing are diffused into the vacuum processing chamber and exhausted through the exhaust ports 919, 920a, 920b by the dry vacuum pump 953. Further, the gas molecules that have entered the differential exhaust mechanism or the charged beam irradiation space are attracted by the annular groove 927 or the tip end portion of the barrel, and pass through the exhaust ports 928 and 71, and are then passed through the full-wheel molecular pump 951. And 952 is exhausted, and is exhausted by the turbo molecule, and then exhausted by the dry vacuum pump 953. As described above, the high-purity inert gas supplied to the hydrostatic bearing is concentrated and discharged after the dry vacuum pump. On the other hand, the exhaust port of the dry vacuum pump 953 is connected to the compressor 954 via a pipe 976, and the exhaust port of the compressor 954 is connected by pipes 977, 978, 979 and a regulator (!: § 111 01*) 961 and 962 are connected to the flexible hoses 931 and 932. Therefore, the high-purity inert inactive gas discharged from the dry vacuum pump 953 is again pressurized by the compressor 954, and is adjusted to an appropriate pressure by the regulators 961 and 962, and then supplied to the static pressure shaft of the χγ table. National Standard (CNS) A4 Specification (210 X 297 public) — — — — — — — — — — — AW· ·1111111 ^ ·11111111 (Please read the note on the back and fill out this page) Ministry of Economic Affairs Intellectual Property Office Employee consumption cooperative printing 1286776 A7 ----- R7______ V. Invention description (124) According to the above, 'In order to make the gas supplied to the hydrostatic bearing as high as possible' and avoid containing water or oil, the turbine Molecular pumps, dry pumps, and compressors require a structure in which moisture or oil does not mix into the gas flow path. Further, in the middle of the compressor discharge side pipe 977, a low temperature collector or a filter (960) or the like is provided, and impurities such as moisture or oil mixed in the circulating gas can be efficiently collected to avoid supply to the hydrostatic bearing. In this way, since high-purity inert gas can be recycled for recycling, high-purity inert gas can be saved, and since the inert gas is not retained in the room in which the device is installed, the occurrence of non-availability can be avoided. Accidents such as suffocation caused by reactive gases. A high-purity inert gas supply system 963 is connected to the circulation piping system, and the high-purity inert gas can be filled in all the cycles including the vacuum processing chamber C or the vacuum piping 970 to 975 and the pressure side piping 976 at the start of the gas circulation. In addition, when the flow rate of the circulating gas is reduced for some reason, the insufficient portion can be supplied. By applying the dry vacuum pump 953, it is possible to perform compression at atmospheric pressure or higher, and a single pump can be used as both a dry vacuum pump 953 and a compressor 954. It is also possible to replace the turbomolecular pump with an ion pump or a getter pump, and to use an ultra-high vacuum pump for the barrel discharge. However, when using these storage and Gan Baguo, the Ministry could not construct a circulation piping system. In addition, it is of course also possible to use a diaphragm type dry pump or the like, or another type of dry pump instead of a dry vacuum pump. Figure 40 shows that the charged beam farmer's first school and the paper size of this embodiment apply the Chinese National Standard (CNS) A4 specification (21〇χ 297 mm) 312767 --------- --装--------Book-----I---^W1 (Please read the note on the back and fill out this page) 124 1286776 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed A7 V DESCRIPTION OF THE INVENTION (125 mode of the detector. Although the optical system is provided in the lens barrel 71, the optical system and the detector are merely examples, and other optical systems and detectors may be used in combination with the optical system of the laser beam device. 760' includes a primary optical system 72 that irradiates a charged beam onto a sample W placed on the stage 50, and a secondary optical system 74 that inputs secondary electrons released from the sample. The primary optical system 72, The invention comprises: an electron grab 721 for discharging a charged beam; a lens system 722 formed by a two-stage electrostatic lens of a charged beam released by the bundle electron 721; and a deflector 730 biasing the charged beam toward 'the optical axis can be The object surface is a vertical Wiener filter, that is, ExB separator 723; a lens formed by a two-stage electrostatic lens The members 724' are arranged as shown in Fig. 40, with the electronic robes 721 placed above the Yuan in order, and the optical axis of the charged beam is inclined with respect to a line perpendicular to the surface of the sample w. ExB deflector 723 The electrode 723-1 and the magnet 723-2 are provided. The secondary optical system 74 is an optical system that emits secondary electrons emitted from the sample, and has two-stage static electricity disposed above the ExB type deflector 723 of the primary optical system. The lens system 741 formed by the lens. The detector 761 detects secondary electrons supplied from the secondary optical system 74. The structure and function of each component of the optical system 76 and the detector 761 are conventionally used. The same is omitted, so the detailed description of the cymbal is omitted. The charged beam discharged by the electron grab 721 is shaped by the square opening of the electron grab, and is reduced by the two-stage lens system 722, and the optical axis is adjusted by the deflector 730. On the deflecting center plane of the ExB deflector 723, a square image with a side of 1.925 ππι is formed. The ExB deflector 723 forms a structure in which an electric field and a magnetic field are orthogonal in a plane perpendicular to the normal of the sample. -----------Install--------- Order --------- (Please read the notes on the back and fill out this page)

1286776 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperatives Printing V. Inventions (l26) The relationship between field, magnetic field, and electronic energy. When you pay the predetermined conditions, let the electrons shine directly. At other times, rely on these Ray Yang. The relationship between ^ % + 琢 and electric field energy is biased toward the given direction. In Fig. 40, the spleen water accounts for two P T to set the charged beam from the electron grab to be vertically incident to the sample W, and to set the secondary electron emitted by the shouting to the direction of the direct detector 761. The impurity beam is deflected by the ExB polarizer, and the lens is reduced by 1/5 in the lens system 724 and projected onto the sample W. The image of the sample released by the sample W is a secondary electron of the bellows like Bellow, magnified in the lens systems 724 and 741, and a secondary electron image is formed in the detection crying detector 761. The four-stage magnifying lens 'is formed by the lens system 724 as a symmetrical small lens, and the lens system 741 also forms a symmetrical small lens, thus constituting a smectic lens. According to the present embodiment, the following effects can be obtained. (1) Use a stage having the same structure as that used for a hydrostatic bearing type in the atmosphere (a stationary cuff support stage without a differential exhaust mechanism to stably mount the stage) The sample is subjected to charged beam treatment. (7) The influence of the vacuum degree of the charged beam irradiation area can be minimized to stabilize the treatment of the charged beam to the sample. (3) The high-precision load can be provided at a low price. An inspection device that is positional and has a stable vacuum in the area where the beam is irradiated. (4) An exposure device that provides high-precision stage positioning and stable vacuum in the charged beam irradiation area at a low price. The high-precision stage positioning performance, and the device with the S-beam in the area of the charged beam to manufacture the semiconductor, can form a fine semiconductor circuit. It can be applied to the Chinese National Standard (CNS) A4 specification (21〇) X 297 public hair 312767 Pack -------- set — (Please read the note on the back and fill out this page) Peak 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing

A7 V. OBJECT DESCRIPTION OF THE INVENTION (127. FIG. 41 shows a schematic configuration of a defect inspection apparatus according to a modification of the present invention. The inspection apparatus is the above-mentioned map projection type inspection apparatus, and is composed of the following components. An electron gun 721 capable of releasing a primary electron beam; an electrostatic lens 722 that deflects and deforms the released secondary electron line; and a position perpendicular to the semiconductor wafer w in a position where the electric field and the magnetic field are positively oriented, a pupil deflector 723 for forming a primary electron beam; an objective lens 724 that images the deflected primary electron beam on the wafer w is placed in a sample chamber that can be vacuum-exhausted, and can be placed In the state of the wafer W, the stage 5 is moved by the horizontal plane; by the irradiation of the primary electron beam, the secondary electron beam and/or the reflected electron beam projected by the wafer is projected at a specified magnification. The imaged projection projection is an electrostatic lens 741; the imaged image is detected as a secondary electronic image of the wafer, and the detector 770 is detected; and the entire device can be controlled and detected according to the detector 77. Electricity The image is a control unit 1〇16 that detects the defect of the wafer w. Further, the secondary electron image includes, in addition to the secondary electrons, the benefit of scattered electrons or reflected electrons. In addition, the objective lens 724 and the wafer W are separated from each other by a deflection electrode 1〇11 which can be deflected toward the incident angle of the wafer w of the primary electron beam by an electric field or the like. The deflection electrode ioii can control the deflection. The deflection of the electric field of the electrode is connected to the controller 1〇12. The deflection controller 1012 is connected to the control unit 1〇16, and can control the deflection electrode so that the electric field corresponding to the command of the control unit 1〇16 can be applied to the deflection electrode 1011. In addition, the bias controller 1〇12 ----------- loaded --------- set --------- (please read the back of the precautions before Fill in this page) 1286776 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Print A7 V. Invention Description (128) A voltage control device that can control the voltage supplied to the deflection electrode J11 to the electrode 1011 can be constructed. Secondary electron image that can be imaged by electrostatic lens 741 For any signal that can be post-processed, any configuration may be omitted. As detailed in Fig. 46, the detector 77A may include: a multi-channel plate 771. A camping surface 772; a relay optical system 773; The imaging sensor 56 is constructed. The multi-channel plate 771 has a plurality of channels in its plate, and when the secondary electrons imaged by the electrostatic lens 741 pass through the channel, more electrons are generated. That is, the secondary electrons are amplified. The fluorescent surface 772 converts the secondary electrons into light by emitting fluorescent light generated by the amplified secondary electrons. The relay lens 773 1 guides the fluorescent light to the CCD imaging sensor 774, and the CCD imaging sensor 774, the secondary electron intensity distribution on the surface of the wafer W is converted into the electrical signal of each component, that is, the digital image data, and output to the control unit 1016. As shown in Fig. 41, the control unit 1016' can be constituted by a general-purpose personal computer or the like. The computer includes a control unit body 1014 that performs various control and calculation processes according to the specified program, a CRT 1015 for displaying the processing result of the main body ι 14 , and an input unit 1018 for inputting a command keyboard or mouse. . Of course, it is also possible to constitute the control unit 1016 by using hardware or a workstation or the like dedicated to the defect inspection device. The control unit main body 1014 is composed of various control boards such as a CPU, a RAM, a ROM, a hard disk, and a video recorder board (not shown). On the memory such as RAM or hard disk, the secondary paper size for storing the digital image data of the electric signal received by the detector 770, that is, the secondary electric hand image of the wafer W, is distributed to the Chinese country. Standard (CNS) A4 specification (210 X 297 mm) -------- 丨I Pack----! Order·------—^_wi (Please read the notes on the back and fill out this page) 1286776 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Print A7 -—— _B7 __ V. Invention Description (129) 1~ ^ Sub-image memory area 1008. Further, on the hard disk, there is a reference image memory unit ι3 which can pre-remember the defect-free wafer reference image data. In addition, on the hard disk, in addition to the control program for controlling the entire defect inspection device, the second electronic image data is stored from the memory area 1 〇〇 8 and automatically calculated according to the specified calculation method according to the image data. A defect detection program 1009 that detects a wafer w defect. The defect detection program 1〇〇9, as described in detail later, has a reference image that can be read by the reference image storage unit 3 and an actual detected secondary electron beam image to automatically When the defective part is detected and a defect is judged, the function of displaying a warning to the processor is displayed. At this time, the secondary image 1 〇 17 can also be displayed on the display portion of the CRT 1 〇 15. Next, the flowchart of Fig. 43 to Fig. 45 will be taken as an example to explain the function of the defect inspection apparatus explained in the embodiment. First, as shown in the flow of the main routine of Fig. 43, the wafer W as the inspection object is mounted on the stage 50 (step 13A). In the form, as described above, a plurality of wafers stored in the loader are automatically mounted to the stage 50, respectively. Next, images of a plurality of inspection regions which are partially overlapped and displaced from each other on the XY plane of the surface of the wafer W are obtained (step n〇4). The plurality of inspected areas for performing image acquisition means that, as shown in FIG. 47, for example, the wafer inspection surface 1034 is indicated by reference numerals 1〇32a, l〇32b, ...10321. Rectangular areas, which are staggered in a partially overlapping manner around the wafer inspection pattern 1〇3〇. As shown in Fig. 42, 16 images of the inspection area 1032 (image to be inspected) can be obtained. In • ml — — — — — — — — — — — — — — — — — — — — — — — — — — I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I Specifications (210 X 297 mm) 129 312767 1286776 Employees' Consortium Printed A7 V. Invention Description (B〇2 '42nd _The number of rectangles in the image is equivalent to - the block size larger than the pixel size The number of blackened digits corresponds to the portion of the pattern image on the wafer %. The details of step 13〇4 are described later in the flowchart of Fig. 44. Next, 'will be obtained in step Li The video image of the plurality of inspected areas is compared with the reference image data stored in the memory unit 1G13 (steps 13 and 8 of FIG. 43) to determine whether the wafer inspection surface collected from the plurality of inspection areas is There is a defect. The process is to perform the matching process between the images (4), the details of which are detailed later in the flowchart of Fig. 45. , τ &lt; from the comparison result of step 1 308, it is judged that the above plural is checked When the wafer inspection surface of the area is flawed (step A warning is given to the processor to display a defect (step 1318). The warning method is: for example, displaying a scarf on the CRT 1015, indicating that the defect is present, and at the same time, indicating that the defect exists. The enlarged image of the pattern is 1〇17. The defective wafer can be directly taken out from the sample chamber 31, and the non-defective wafer is additionally stored in another storage location (step 1319). The result of the comparison processing in step 1308 is When it is determined that the wafer w is not missing (the determination is negative in step 1312), the wafer w to be inspected is cut off to determine whether or not there is an area in which inspection is necessary (step 1314). At the time of the region (definitely determined in step j 314), the shell J drives the stage 50 to move the wafer so that other areas that should be inspected can enter the primary electron irradiation area (step 1316). Thereafter, return to step 1320. ' Repeat the same process for other inspection areas. I ^----------------. (Please read the notes on the back and fill out this page) Paper Size _ Standard (CNS) A4 Specifications - X 297 mm) 312767 I2 86776 A7 V. Description of Invention ((3)) When it is judged that there is no area to be inspected (step 1314 negative judgment), i after the process of removing the defective wafer (step 1319), it is judged whether or not the wafer w which is the object to be inspected is The last wafer, that is, whether or not the unchecked wafer is still present in the loader (not shown) is judged. When the final wafer is not final (step 1320 is negative), the wafer to be inspected is stored in the designated storage and subtraction position, and the other unpatched wafer is mounted on the stage 50 (step 1322). ). Thereafter, returning to step 132, the same processing is repeated for the other inspection areas. When the wafer is the final wafer (step 132, affirmative judgment), the wafer to be inspected is stored in the designated storage location, and all processes are terminated. Next, the processing flow of the step 13〇4 will be described in accordance with the flowchart of Fig. 44. In Fig. 44, first, the image number 丨 is set to the initial value ι (step 1330). The image number is assigned to the identification number of each of the plurality of inspection area images in order. Next, the image position (Xi, Yi) is determined in the area to be inspected of the set image number ( (step 1332). The image position is defined as a specific position within the area in which the area to be inspected is delineated, such as a central position within the area. At this point of time, since i = 1, it becomes the image position (Xi, 1), which corresponds to the center position of the inspection area 1〇32a shown in Fig. 47. The image positions of all the image areas to be inspected are determined in advance and are memorized on the hard disk of the control unit 1016, and are read out in step 1332. Next, 'the electric field is applied to the deflecting electrode by the deflecting controller 1012 (step 1334 of FIG. 44), so that the primary electron line passing through the deflecting electrode 1〇1 of FIG. 41 can be irradiated to the one determined in step 1332. Image Position This paper size applies to the Chinese National Standard (CNS) A4 specification (21〇x 297 mm) 312767 --------^--------- (Please read the notes on the back first. Fill in this page) 1 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 132 312767 1286776 V. Invention Description (132) (xi, Yi) The image area to be inspected. Then, the electron beam is discharged from the electrons 72, and is irradiated onto the surface of the mounted wafer through the electrostatic lens 722, the ExB deflector 723 objective lens 724, and the deflecting electrode 1〇11 (step 1336). At this time, the primary electron beam is deflected by the electric field formed by the deflection electrode ion to illuminate the entire image area to be inspected at the image position (Xi, Yi) on the wafer surface 1〇34. When the image number i=l, the checked area is l〇32a. Secondary electrons and/or reflected electrons (hereinafter referred to as "secondary electrons") are emitted from the inspection region irradiated by the primary electron beam. Thus, the generated secondary electron beam is imaged in the detector 770 in accordance with the specified magnification by expanding the electrostatic lens 741 of the projection system. The detector 77 〇 detects the image ^ secondary electron beam ' and converts the output to the electrical signal of each detected component, that is, the digital image data (step 1338). The digital image data of the detected image number 丨 is transferred to the secondary electronic image memory area 8 (step 134A). Next, the image number i is incremented only (increinentA) (step U42), and it is determined whether the incremented image number (i+1) exceeds a predetermined value iMAX (step 1344). The number ' is 16 in the above example shown in Fig. 42. When the image number i does not exceed the predetermined value 睦, the value is WAX (step 1344 negative judgment), and returns to step 1332 again for the selected The image number (i+Ι) you added to T is again determined by the image position (Xi + 1, Yi+l). The shadow ~ image position is at the specified distance (△ Χι ' △ YJ ' from the aforementioned subroutine The image position (X!, Y) of the backup T is moved to the X direction and/or the γ direction. The example of the 笫r 41 image shows that the area to be inspected becomes (Xi, YJ only moves toward the γ direction ~ port) The position (X2, Y2), the table paper scale applies to the Chinese National Standard (CNS) A4 specification (2) ο 297 • II ni ϋ n ϋ — mm n · 1 I ϋ nn ϋ n One: or I ϋ nn I n I n I (Please read the phonetic transcription on the back? Please fill out this page again) 1286776 A7 B7 V. Invention description (133) The area l 〇 32b. And ( △ , △ Yi) (i = l, (please read the back of the note before filling this page) 2,.." ΜΑΧ) value can be based on: wafer inspection surface 1034 pattern 1030 Actually, the degree of field of view deviation of the detector 770, the number and area of the area to be inspected, and the like are appropriately set. Then, the processes of step 1332 or 1342 are sequentially repeated in the iMAX areas to be inspected. These are checked. The area, as shown in Fig. 47, is arranged on the wafer inspection surface 1034 in a partially overlapping manner to form the image area to be inspected 1 〇 32k in the k-th moving position (Xk, Yk). As shown in Fig. 42, 16 pieces of image data to be inspected are acquired in the image memory area 1 to 8. The obtained image of the plurality of inspected areas 1 to 32 (inspected image) is shown as the 42nd line, and the part or The image 1030a of the pattern 1〇3〇 on the entire wafer inspection surface 1034. When the image number i exceeds the predetermined value iMAx (step 1344 affirmatively judged) 'returns to the s subroutine' and moves to the main program of Fig. 37 Process (step 308). The property bureau employee consumption cooperative prints another image data that is memorized and transmitted in step 1340, which is formed by the intensity value of the secondary electrons of each pixel detected by the detector 770 (so-called complete lean material) because In the subsequent comparison process (step 1308 in FIG. 7), the matching operation with the reference image is performed. Therefore, it can be stored in the memory area 1 to 8 in a state where various arithmetic processing is performed. The arithmetic processing includes, for example, setting the size and/or density of the image data to a positive planning process that matches the size and/or density of the reference blouse data, or an independent pixel group having a predetermined number of pixels or less. In addition to purely complete information, in addition to simple complete information, the paper will not be reduced in high-definition patterns. (4) Tickets (CNS) A4 specifications (10) (10) Gong Chu 133 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau staff consumption In the range of the detection intelligibility of 134, the feature matrix of the extracted pattern features can be converted into compressed data. The feature matrix includes mxn feature matrix, etc. The quadratic inspected region formed by the MxN pixel is divided into mxn (m &lt; M, ii &gt; N) blocks, and the sum of the two-human electron intensity values of the pixels included in each block (or the sum thereof) The normalized value obtained by dividing the total number of pixels in the entire area to be inspected is used as each matrix component. In this case, the reference image data is also memorized in the same manner. The image data referred to in the form refers to the complete data, which includes the image data extracted by the arbitrary algorithm. Then, the processing flow of the step 13〇8 is explained using the flowchart of FIG. 45. First, the control unit 1016 The CPU reads the reference video data from the reference video storage unit 1013 (Fig. 41) to a working memory such as a ram (step 1350). The reference video is indicated by reference numeral 1036 in Fig. 42. The image number i is reset to 丨 (step 1352), and the image data to be inspected of the image number 1 is read from the memory area ! 〇〇 8 to the working memory (step 1354). The read reference image data is read and The data of the image i is matched to calculate the distance value Di between the two (step 1356). The distance value Di represents the similarity between the reference image and the image to be inspected i, and the larger the distance value Di is the reference The larger the difference between the image and the image to be inspected i, the arbitrary value can be used as the distance value Di. For example, when the image data MxN pixel is formed, the secondary electron of each pixel can be used. The degree (or feature quantity) is regarded as the position vector component of the MxN dimensional space, -----------· I-------^-----1---. Read the notes on the back and fill out this page.) b. The paper scale applies to China National Standard (CNS) A4 g (21G X 297). 134 312767 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 1286776 A7 ------ -- B7 V. Invention Description (135) Calculate the Euclid distance or correlation coefficient between the reference image vector and the image i vector existing in the MxN dimensional space. Of course, the distance other than the Euclid distance can also be calculated. For example, the so-called city street distance and the like. Further, when the number of pixels is large, the amount of calculation thereof is enlarged, and therefore, the distance value between the image data represented by the mxn feature vector can be calculated as described above. Next, it is judged whether or not the calculated distance value Di is smaller than the specified threshold Th (step 1358). The threshold value Th can be regarded as a criterion obtained by judging that the reference image and the image to be inspected are completely matched. When the distance value Di is smaller than the specified threshold Th (step 1358 affirmatively, it is determined that the inspection surface 1 〇 34 of the wafer W is "no defect" (step 1360), and the subroutine is repeated. That is, as long as it is checked When one of the images is substantially identical to the reference image, it is judged as "no defect." Thus, since it is not necessary to perform matching processing with all of the images to be inspected, high-speed judgment can be achieved. The legend shows that there is no positional deviation between the image to be inspected in the third row and the third column and the reference image is substantially consistent. When the distance value Di is above the threshold Th of the heart (step 1358 negative judgment), the image is imaged. The number 1 is incremented by 1 (step 1362), and it is judged whether the incremented image number (i+Ι) exceeds a predetermined value (step 1364). When the image number i does not exceed the predetermined value and the heart (step 1364 is negative) If yes, return to step 1354 and read the image data for the incremental image number (i+i) to repeat the same process. When the image number 1 exceeds the predetermined value ιΜΑχ (step 1364 is definitely determined) 'The judgment is that the inspection surface 1034 of the wafer w has an r defect" (the step of this paper scale applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ ---------Book--------- (Please read the note on the back and then fill out this page) 135 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention Description (136) 1366), and returning to the sub-port. That is, when the entire image to be inspected does not match the reference image, it is judged as "defective"." The above is the various embodiments of the stage device. However, the present invention is not limited to the above examples, and may be arbitrarily changed as long as it does not exceed the gist of the present invention. For example, although the semiconductor wafer w is used as the sample to be inspected, the present invention is inspected. The sample is not limited to the semiconductor wafer w, and any sample that can be detected by an electronic wire can be selected to ride the test sample. For example, a photomask formed by the wafer exposure pattern can be used as an inspection object. Also suitable for use with charged particle lines other than electrons for defect inspection The device is also applicable to any device that can obtain images for checking sample defects. The deflecting electrode 1011 can be placed not only between the objective lens 724 and the wafer w, but also at any area where the electron beam irradiation area can be changed. The position, for example, can be placed between the ExB deflector 723 and the objective lens 724, or between the electron gun 721 and the ExB deflector 723. In addition, the biasing direction can be controlled by controlling the electric field generated by the ExB deflector 723. In other words, in the above-described embodiment, when the matching between the images is performed, the matching between the pixels or the matching between the feature vectors is employed. The two can also be combined. For example, high-speed matching is performed with a feature vector with a small amount of computation, and then the image with high similarity is matched with more detailed pixel data, and the two-stage processing can simultaneously achieve high speed and precision. Degree processing.丨 I I I I I - I I I — I I I t — — — — — — — I· . (Please read the notes on the back and fill out this page)

This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee elimination f Cooperative printing A7 V. Invention description (137) In the above embodiment, although one electron is used The positional deviation of the line irradiation area corresponds to the positional deviation of the image to be inspected, but it is also possible to search for the best matching area on the image data before or during the matching process (for example, detecting a region with a high correlation coefficient) And matching the regions to each other) is combined with the present invention. Thereby, the positional deviation of the primary electron beam irradiation area of the present invention can be utilized, corresponding to the large positional shift of the image to be inspected, and the digital image processing of the latter stage can be utilized to absorb the small positional shift, thereby improving the defect detection. The precision of the out. In the electronic device of the defect inspection, the fourth embodiment [the configuration shown in the figure, the electro-optical system or the like can be arbitrarily changed as appropriate. For example, the electron beam irradiation mechanism (721, 722, 723) of the defect inspection apparatus shown in FIG. 41 is such that the electron beam is incident on the surface of the wafer w from above in a vertical manner, but the ExB deflector 723 may be omitted. The electron beam is incident on the surface of the wafer W in an inclined manner. Further, the flowchart of the Fig. 43 is not limited to this. For example, in the sample determined to be defective in step 1312, the defect inspection in other areas is not performed, but the processing flow may be changed so that the entire area is covered for defect detection. Further, if the electron beam irradiation region can be enlarged once, and the entire inspection region of the sample is covered by one irradiation, steps 1314 and 1316 can be omitted. As described above, the defect inspection device of the present embodiment can be separately obtained on the sample. The image of the plurality of inspected areas that are partially overlapped and displaced from each other, and since the sample defects are inspected by comparing the image of the inspected area with the reference image, the following good effects can be obtained: 312767 — — — — — — — — — — — Awl * — — — — — — — ^ · 111111! (Please read the notes on the back and fill out this page) Printed by the Intellectual Property Office of the Ministry of Economic Affairs

1286776 A7 -----B7___ V. INSTRUCTIONS (138) The accuracy of defect detection caused by the positional deviation of the image of the inspection area and the reference image is reduced. According to the apparatus manufacturing method of the present invention, since the defect inspection of the sample is performed by using the above-described defect inspection apparatus, it is possible to obtain an excellent effect of improving the yield of the product and preventing the shipment of the defective product. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The observation area on the surface of the sample is irradiated on one side, and the secondary electron optical system adopts a mapping projection method. This method not only has the advantages of the above-described mapping projection method, but also can solve the following problems of the mapping method by scanning a plurality of electronic lines: (1) for one-time irradiation of the electron beam, and the valley is generated on the surface of the sample. Charging, (2) The electron beam current obtained by this method has its limit (1·6&quot;Α), and thus hinders the improvement of the inspection speed. That is, as the electron beam irradiation point moves, charge loss is easily generated and charging is reduced. In addition, the current value can be increased by increasing the number of lines of the complex electron lines. In the embodiment, when four electron lines are used, the current of one electron line is 500 Α (the electron diameter is 1 〇 &quot; m), so that a total of 2 Α current can be obtained. It is easy to increase the number of electronic wires to about six, and in this case, a current of 8 // Α can be obtained in principle. In the scanning of the complex electron lines, as long as the irradiation amount of the plurality of electron lines can be uniformly irradiated to the irradiation area, it is not limited to the use of the raster scan, or the Lissajou's figure. Figure) and other forms of scanning. Therefore, the scanning direction of the stage does not need to be in the scanning direction of the multiple electronic lines——————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————— S (Refill this page) 1286776 A7 V. Inventive Note (i39) Electronic wire leaching, this embodiment uses a hot electron wire as the τ 卞 green source as an electron source. The electron emission I emitter is made of LaB6. As long as you have an old point (please read the note on the back and then fill out this page) and say that the rainbow is a bit (the vapor pressure is low at two temperatures), .Λ% ^ Use other materials. In order to obtain a plurality of electronic lines, two methods can be used. An electron beam is pulled from an emitter (having a protrusion), and the burial is passed through a thin plate with a large number of holes (the aperture plate obtains a majority of the electron lines) ^ ^ _ _ _ _ _ One method is to form a plurality of protrusions on an emitter, and to pull out the plurality of electron lines directly at .m^. No matter which method is used, the characteristics of the electrons are easily released from the apex of the protrusions. In other ways, the electronic line traceable source can also use a hot electric field discharge type electron line. The hot electron line source is a way to discharge electrons by heating the electron discharge material, and the so-called thermoelectric liberation electron line The source is a method of applying a high electric field to the electron discharge material to emit electrons, and then stabilizing the electron emission by heating the electron beam discharge portion. The Ministry of Economy, Intellectual Property Office, Staff Consumer Cooperatives, Printing, Section 48, 'Other Implementations Fig. 48BW is a schematic plan view showing a state in which a sample is detected by a complex-secondary electron line sweep. The electronic grab 721 operating under the electric limiting condition can form a beam of light as indicated by the symbol 7 π of the 48th figure. The multi-beam 711 is composed of eight circular beams arranged on the circumference, that is, the primary electron line 711a. The plurality of primary electron beams 7Ua generated by the electron gun 721 are bundled by the lenses 722-1 and 722-2, and are incident on the sample at right angles by the ExB separator 723 formed by the electrodes 7234 and the magnet 723-2. The paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 cc) 139 312767 1286776 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Print A7 V. Invention Description (140) By including these elements 711, 722-^ The primary optical system of 722-2, 723, lens 724-1 and objective lens 724·2, the multi-beam 711 formed by the plurality of primary electromagnetic wires 711a bundled on the sample w is by the second segment mounted on the downstream side of the lens 722_2 The deflector (not shown. It is included in the primary optical system) sweeps the cat on the sample W. The scan of the sample W is performed in the X direction with the main surface of the objective lens 724_2 as the center of the deflection, as shown in Fig. 48B. , multi-beam 711 Each of the primary electron beams 7 11 a is disposed on the circumference in a spaced relationship with each other, and when projected on the γ-axis orthogonal to the X-axis of the scanning direction, the distance between the adjacent first electron beams 711 a ( The center of each primary electron line is measured to be equidistant. At this time, the adjacent electronic wires 711 &amp; can be isolated, connected, or partially overlapped. As shown in Fig. 48B, by forming a multi-beam 711 Each of the primary electron beams 711a is disposed at a distance from each other such that the current density limit of each of the primary electron beams 711 a, that is, the current density value at which the charge limit is not generated in the sample w, can be maintained The same situation is achieved when a single circular beam is used, whereby the drop in the S/N ratio can be prevented. In addition, since the respective electron lines 7 11 a are separated from each other, the space charge effect is also small. On the other hand, the multi-beam 7 i i can scan the sample w at one time and cover the field of view 713 with the same density. Thereby, it is possible to form an image with a high-pass excess and shorten the inspection time. In Fig. 48B, the multi-beam at the scanning start point is indicated by symbol 711, and the symbol 7Ua represents the multi-beam at the end of the scanning. -----------Install---------.Book--------- (Please read the notes on the back and fill in this page) Sample w placed Sample table (not shown). The sample table is along the X side

[286776

V. INSTRUCTIONS (141) When scanning is performed (for example, scanning at a range of 200 # 111), the direction γ orthogonal to the scanning direction X is printed along the employee's consumption cooperative of the Intellectual Property Office of the Ministry of Economic Affairs. Move continuously. Thereby, a raster scan is performed. In addition, a drive unit (not shown) for moving the sample stage is mounted. At the time of scanning, the secondary electrons generated by the sample W and emitted in the respective directions are accelerated in the optical axis direction by the lens 724-2, and as a result, the secondary electrons emitted from the respective points and in the respective directions are respectively bundled. The apertures between the images are enlarged by the lenses 724_1, 741-1, and 741-2. The secondary electron beam 712 formed by the secondary optics including the lenses 724], 724-2' 741, and 7仏2 is projected onto the light receiving surface of the detector 761 to form an enlarged image of the field of view. The detector 761 included in the optical system multiplies the secondary electron line by MCp (microchannel plate), converts it into an optical signal by a flasher, and converts the electric signal by using a CCD detector. #纟 The electrical signal from ccd can form a secondary image of sample w. Each of the primary electron beams 7Ha has a size of at least two pixels of the CCD pixel. By causing the electron robes 721 to operate under the space charge restriction condition, the smashing noise of the primary electron beam 711a is reduced by about the number of ticks when operating under the temperature condition limit. Therefore, since the loose noise of the secondary electronic signal can also be reduced by one digit, a good S/N^ signal can be obtained. According to the electronic wire device of the present embodiment, the current density threshold value of the charged-sub-electron wire which does not generate the sample in the sample can be maintained not only in the phase of the use of a single circular beam, but also in the phase Decrease, and can be used in China's national specifications (2). Reverse, 141 312767 I1IIII1 — — — · 1111111 ^·I------- (Please read the notes on the back and fill out this page) 1286776 A7 V. DESCRIPTION OF THE INVENTION (142) An image is formed with a high throughput to shorten the inspection time. Further, the apparatus manufacturing method in the present embodiment can improve the yield by performing wafer evaluation after the end of each wafer processing process by using the electron beam device. Fig. 49A is a view showing the details of the electronic wire device of the embodiment of Fig. 48A, and the map of the field. The four electronic wires 7ΐι(7)b 1 711_2, 711_3, 711_4) released by the electronic grab 721 are shaped by the mouth 徨 adjuster να", and the two-stage lenses 722-1, 722_2 are used at the center of the Wiener filter 723. An elliptical image of l〇/zmx 12//m is scanned by the deflector 730 in the vertical direction of the drawing, and the entire four electron lines are covered by an average of i lmmx 〇 25 mm @ rectangular area Way imaging. By means of the multiple electronic wires biased by EXB723, the junctions are connected by the na gate, and then the lens 724 is reduced to 1/5, and the p% front is covered on the sample to make it perpendicular to the sample surface for illumination and projection ( The four secondary electron lines 712, which have information on the pattern image (sample image F) released from the sample, are enlarged by the lenses 724, 74n, 74ι·2, and are surrounded by four electron lines 712. The synthesized rectangular image (the enlarged projection image is imaged on the MCP767. The enlarged projection image F' formed by the secondary electron beam 712 is increased by 10,000 times with the MCP767, and the fluorescent portion is increased by 10,000 times. Printed by the 767 Food Change Bureau employee consumption cooperative (please read the note on the back and fill in this page). Second, light and use TDI_CCD762 to convert to the continuous movement speed of the sample in February (four)' and in the form of continuous image The image display unit 765 picks up the image and outputs it to the CRT, etc. The electric line: the line illuminating unit 'must maintain the average of the surface of the sample' to reduce the illuminating sentence phenomenon, and irradiate the electron beam into a rectangular or elliptical shape. Applicable _ home Quasi (CN-21G x 297 Kimiyoshi a 1,423,127,671,286,776

The Ministry of Economic Affairs' Intellectual Property Office employees' consumption cooperatives print and increase the throughput, and must irradiate the electron beam irradiation area with a large current. Conventional electron beam irradiation unevenness is about i0% of soil, so that the image contrast is not uniform, and the electron beam irradiation current is about 500 Na in the irradiation field, so that a high throughput can be obtained. Further, compared with the scanning electron microscope (SEM), since the present invention performs electron beam irradiation on the wide-area image observation area, the problem of imaging failure due to charging can be avoided. A primary electron beam irradiation method of this embodiment will be described with reference to Fig. 49B. The primary electron line 711 is composed of four electronic lines 711-1, 711_2, 711_3, and 711-4 whose beam has an elliptical shape of 2 from mx 2.4 // m, with an average one corresponding to 200 /Z mx U.5/Z m The rectangular field is raster scanned so that it can illuminate a rectangular region of the entire range of 2 〇〇// mx 5 〇 &quot; m without overlapping. The beam of 711-1 reaches 711_15 in a limited time, and returns to the off-beam spot spot (1〇 from m) 711-1 immediately after almost no loss of time (2) 〇2 direction), then 'the same as before, again move to the bottom of 711-1, which is parallel to 71 id to 7 11-1', in a limited time (711_2, direction), repeat the action 'and The broom is 1/4 (2 〇〇 in m X 12 _ 5 // m) of the rectangular irradiation area shown by the dotted line, and then 'returns to the starting point 7 11 _ 1 to repeat the action at high speed. The other electronic wires 711_2 to 711-4 also overlap the electronic wire 711-1, repeating the broom at the same speed and illuminating the rectangular irradiation region in the figure at a high speed (200 &quot; mx 12·5 &quot; m ). If the illumination is average, it is not limited to performing the aforementioned raster broom. For example, it is also possible to scan the Lissajous figure. Therefore, the moving direction of the stage is not necessarily the direction A shown in the figure. That is, there is no need to scan-----------install---------order--------- (please read the phonetic on the back? This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 public meal) 143 312767 1286776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention description (correction) Direction (the horizontal direction of the figure) The high speed scanning direction is vertical. In the present embodiment, irradiation was performed with an electron beam unevenness of about ± 3 %. The irradiation current ' can be obtained on the surface of the entire sample under the condition that one electron line is about 25 〇 nA, and four 'electron beams are obtained as 1 '〇A (2 times in the past). By increasing the number of electron lines, the current can be increased and a high throughput can be obtained. Further, compared with the conventional one, the irradiation point is small (the area is about 1/80), and the charging can be controlled to be 1/20 or less of the conventional one due to the movement. Although not shown in the figure, in addition to the lens, the device further includes: a field-restricting gate; a deflector (calibrator) for adjusting the number of poles of four or more poles of the electronic bobbin; (stigmator); equipment required for illumination and imaging of electronic wires such as complex quadrupole lenses (quadrupole lenses) for adjusting the electronic velocity shape, i is manufactured below, with reference to the 50th and 51st drawings, An embodiment of a method of manufacturing a semiconductor device of the present invention will be described. Fig. 50 is a flow chart showing an embodiment of a method of manufacturing a semiconductor device of the present invention. The process of this embodiment includes the following main processes. (Ό wafer fabrication process for wafers (or wafer preparation process for preparing wafers) (step 1400). (2) Manufacture of reticle process for twilight reticle (or reticle preparation process for reticle) (Step 1401) 〇 (3) A wafer processing procedure for performing necessary processing on the wafer (Step 1402). (4) The wafer formed on the wafer can be cut and made available to 〜 — —丨 — 丨丨丨—I ---------Book --------- (Please read the phonetic on the back first? Then fill out this page) This paper scale applies to Chinese national standards ( CNS) A4 specification (210x297 mm 144 312767 ^86776 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention description ((4)) Action wafer assembly process (step 1403). (5) Used to check the completed wafer Wafer inspection process (step 1401) 〇 In addition, each of the above main processes includes several sub-processes. In the above main process, the system has a decisive influence on the performance of the semiconductor device: (3) the wafer processing process. The circuit diagram designed by Lieutenant is stacked on the wafer in sequence and formed into more The number is used as a memory or Mpu action film. The wafer processing process includes the following processes: (A) a film for forming an electric conductor film or wiring portion as an insulating layer, or a metal film forming an electrode portion. Forming a process (using cvd or sputtering, etc.) (B) An oxidation process for oxidizing the film layer or the wafer substrate. (C) Using a photomask for selective processing of the film layer or the wafer substrate ( The grating is formed by a microfabrication step of forming a photoresist pattern. (D) An etching process for processing a thin film layer or a substrate according to a photoresist pattern. (E) Ion/impurity implantation diffusion process. (F) Photoresist stripping process (G) Inspect the process of the processed wafer. In addition, the wafer processing process only processes the necessary layers to process the semiconductor device according to the design operation. Figure 51A shows the core of the wafer processing process that constitutes Figure 50. The process of the microfilm step process includes the following processes: 312767 — II-----i^w· 1111111 ^'1 —----I (Please read the notes on the back and fill in the form) Page) 1286776 Economy Intellectual Property Office Staff Consumer Cooperative Printed 312767 A7 ___B7_____________ V. INSTRUCTIONS (146) (a) Apply a photoresist photoresist coating process on the wafer forming the circuit pattern in the previous stage process (step 1500). The exposure photoresist process (step 1501). (c) a developing process for developing the exposed photoresist to obtain a photoresist pattern (step 1502). (d) for stabilizing the imaged light The annealing process of the resist pattern (step 1503) 〇 The above-mentioned semiconductor device process, wafer processing process, and microfilm process are well known, and therefore will not be described in detail herein. In the inspection process of the above (G), the defect inspection method and the defect inspection device related to the present invention are used, and even the semiconductor device having the fine pattern can be inspected in a good throughput state, so that the full inspection can be performed. 'Improve the yield of products and prevent the shipment of plague products. Check the following for the inspection sequence in the inspection process of (G) above. Generally speaking, the defect inspection equipment using electronic wires is very expensive. At the same time, the throughput is lower than other programming equipment. Therefore, the current system is Used after the most important process to be inspected (eg, etching, film formation or CMp (Chemical Mechanical Polishing) flattening, etc.). The inspected wafer is positioned on the ultra-precision X-Y stage by an atmospheric transfer system and a vacuum transfer system, and then fixed by an electrostatic chuck mechanism, and then the defects are inspected in the order of (Fig. 51B). First, use the optical microscope to determine the position of each wafer in accordance with the actual needs, or to apply the Chinese National Standard (CNS) A4 regulations (210 X 297 public) to the high paper size of each place — — — — — — — — — — iAwi ·1111111 ^ !1111111 ^^1 (Please read the notes on the back and fill out this page)

1286776 V. Description of the invention (remembered by 147 degrees of detection. In addition, the optical microscope can obtain an optical microscope image of the defect and compare it with the image of the electron line. Then, match the type of wafer ( After any process, or the size of the wafer is 2〇cm or 3〇Cm, etc., the information of the processing program is input to the device and the following inspection site designation, electro-optical system setting, and inspection condition setting are performed. Simultaneous defect inspection while performing image acquisition. Comparison between circuits, die comparison, etc., can be performed by using a high-speed information processing system with calculation function, and output the result to crt or the like as needed, or Memory. Defects include particle defects, shape defects (pattern defects), and electrical defects (wiring or poor conduction such as wiring or through-holes), etc., and can automatically distinguish the types of defects, the size of defects, or the classification of fatal defects in a timely manner. Use of major defects in the wafer, etc.) can be detected by comparing the abnormalities to achieve the detection of electrical defects. Poor electron beam irradiation (about 亀v), forming a normal positive charge, and ^ is lower than the use, it can be distinguished from the normal place. In this case, the electron beam irradiation mechanism refers to: the electronic used for general inspection In addition to the illumination mechanism, a low potential (energy) electron beam generator (thermal electron generation, UV/photoelectron) installed to highlight the contrast formed by the potential difference. The low-potential (energy) electron beam is generated and irradiated before the inspection electron beam is irradiated to the inspection target area. The X-ray inspection (4) When the sub-line itself is a map projection method that can be positively charged, 'depending on the type' does not require a different low-potential electron line generating mechanism. Further, for a reference potential of a test such as a wafer, a defect can be detected by applying a positive potential or a negative potential (which occurs when the ease of flow changes in the forward or reverse direction of the element). In addition to this, you can also use the online paper scale. _ Home Standard (CNS) A4 g (2) Q χ 公 ^ ^

Ait/ 312767 --------^ --------- (Please read the phonetic on the back first? Then fill out this page) 礞. 1286776 A7 B7 V. Invention description (148) Wide detection device Or calibration accuracy test (please read the phonetic note on the back? Please fill out this page again) Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed This paper scale applies China National Standard (CNS) A4 specification (210 X 297 mm) 312767

Claims (1)

Japanese Patent Application No. 90115554 (Patent No. 90115554) (Aug. 18, 1995) • An inspection apparatus comprising: a light beam generating device that irradiates charged particles to an object to be inspected, While decelerating the charged particles, the secondary charged particles generated by the charged particles being projected on the sample to be inspected are subjected to an accelerated deceleration electric field type objective lens; the detector for detecting the secondary charged particles; and the electric field and the magnetic field are positive a field in which the secondary charged particles are deflected toward the detector direction; and disposed between the decelerating electric field type objective lens and the sample to be inspected, 'the axis of the charged particle is substantially axisymmetric, The electrode located at the electric field intensity of the charged particle irradiation surface of the sample to be inspected may be controlled. The inspection apparatus of claim i, wherein the voltage supplied to the electrode for controlling the electric field intensity is controlled in accordance with the type of the sample to be inspected. The inspection apparatus according to the first aspect of the patent application, wherein the sample to be inspected is a semiconductor wafer, and a voltage supplied to the electrode for controlling the electric field intensity is performed according to whether the semiconductor wafer has a through-body. control. 4. The inspection apparatus according to any one of the third to third aspects of the invention, wherein the foregoing inspection apparatus is for correcting the national standard (CNS) of the paper country (10) during the manufacture of the semiconductor device or after the manufacture of the semiconductor device 312767. Violet) 1286776 H3 Used to check the defects of the semiconductor wafer of the sample being inspected. 5. An inspection apparatus for inspecting a sample defect, comprising: a charged particle irradiation mechanism capable of irradiating the -sub-charged particles to the sample; and mapping the secondary charged particles discharged from the sample by the irradiation of the primary charged particles a projection projection mechanism for imaging and imaging; a detection mechanism that images the image formed by the mapping projection mechanism as an electronic image of the sample and detects the image; and determines the sample defect according to the electronic image detected by the detection mechanism The defect determining means supplies electrons having a lower energy than the primary charged particles to the sample at least during the detection of the electronic image by the detecting means. &quot; 6 - An inspection apparatus for inspecting sample defects, comprising: a charged particle irradiation mechanism capable of irradiating primary charged particles to the sample; ^ Printed by the Central Bureau of Standards Staff Welfare Committee of the Ministry of Economic Affairs A projection projection mechanism for imaging and projecting secondary charged particles released from the sample by imaging the charged particles; and imaging the image formed by the mapping projection mechanism as an electronic image of the sample and detecting the detected image A mechanism for determining a defect of the sample defect based on an electronic image detected by the detecting means, and a UV photoelectron supply mechanism capable of supplying UV photoelectrons to the sample. • A method for inspecting sample defects, which is characterized by the inclusion of the Chinese National Standard (CNS) Α4 specification (210Χ297 mm) 2 312767 Revision 1286776 1286776 H3 f The apparatus for moving the sample to an arbitrary position to irradiate the charged particle beam to the sample surface, wherein the xy stage is provided with a non-contact support supported by the hydrostatic bearing. a mechanism; and a vacuum sealing mechanism of the difference (4) gas (4), between the portion irradiated by the charged particle beam on the sample surface and the support portion of the χγ_stage hydrostatic bearing, the separation of the conductance is reduced • Pull 71W 9 A pressure difference is generated between the charged particle beam irradiation area and the hydrostatic bearing support. The charged particle beam device of the first aspect of the invention, wherein the partition wall has a differential exhaust structure built therein. 12. The charged particle beam device of claim 1 or item n, wherein the aforementioned partition wall has a cold trap function. 13. The charged particle east device of claim 10 or 11, wherein the partition wall is disposed adjacent to the charged particle beam irradiation position and the vicinity of the hydrostatic bearing. _ 14·If the charged particle beam device of the Scope or the third item of the patent scope is applied, the employee of the Central Bureau of Standards of the Ministry of Economic Affairs shall print the gas system nitrogen supplied to the hydrostatic bearing of the χγ stage. Or inert gas. The charged particle beam device of claim 1 or claim 5, wherein the surface treatment is performed to reduce the gas released from the surface of the member opposite to the hydrostatic bearing of the χγ stage. . 16—The wafer defect inspection equipment uses the device of the patent application scope item 1Q or 11 to inspect the defects on the surface of the semiconductor wafer. This paper scale is applicable to China National Standard (CNS) A4 specification (210X297 mm). 4 312767 Revision 1286776 H3 17. An exposure apparatus that uses the patent application scope or item u, and is placed on the surface of a semiconductor wafer. Or the optical thumb depicts the circuit pattern of the semiconductor device. 18. The device of claim 1, wherein the device is used to manufacture a semiconductor. The 19' charged particle beam device irradiates a charged particle beam on a carrier σ. The sample device is characterized in that: the XY carrier port is in the inside of the body, and is supported by the housing in a non-contact manner by a hydrostatic bearing, and vacuum is exhausted to the housing that houses the stage. The charged particle beam is irradiated onto the sample surface of the ▼ electro-particle beam device. A differential exhaust mechanism for exhausting the charged particle irradiation region on the sample surface is provided around the enthalpy. The charged particle beam device of claim 19, wherein the gas system supplied to the hydrostatic bearing of the crucible stage has a nitrogen gas or an inert gas. The nitrogen gas or the inert gas is discharged from a casing accommodating the stage. Pressure and re-supply to the above-mentioned hydrostatic bearing. The Central Bureau of Standards and Staff Welfare Committee of the Ministry of Economic Affairs printed 2 1 · a type of wafer inspection equipment, using the device described in the scope of application of the patent scope i 9 or 20 Check Defects on the surface of a semiconductor wafer. 22—A type of exposure apparatus that uses a device of claim 19 or 2 to depict a circuit pattern of a semiconductor device on a semiconductor wafer surface or a grating. The device of the 19th or the 2nd item, wherein the device is used for manufacturing a semiconductor. The paper size towel (Home Standard (CNS) A4 specification (210X297 public) 5 312767 revision