TWI277212B - Method of converting N face into Ga face for HEMT nitride buffer layer structure - Google Patents
Method of converting N face into Ga face for HEMT nitride buffer layer structure Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000010899 nucleation Methods 0.000 claims abstract description 20
- 230000006911 nucleation Effects 0.000 claims abstract description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 13
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 11
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 239000010980 sapphire Substances 0.000 claims description 13
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
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- 229910002704 AlGaN Inorganic materials 0.000 description 15
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
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AOC-05-31-TW 127721*2 九、發明説明· 【發明所屬之技術領域】 本發明係有關一種高功率電晶體（HEMT)之氮化物緩 衝層的晶體結構，尤指一種將緩衝層結構(bulk GaN)由N面 (000Ϊ)轉換為Ga面（0001)之方法。 【先前技術】 按，最近幾年網際網路與行動電話等資訊通信系統的發 展極為快速，要求通信網路高速化、大容量化已成為全球各 國的共識，而支撐1τ產業主要支柱就是化合物半導體元件 (device) 〇 典型的GaAs與InP等化合物半導體會被應用於高頻元 件，理由之〆是它的電子移動速度非常快。AlGaAs，InGaAs， InGaP等包含混晶半導體在内的化合物半導體都採用異質 (hetero)構造，因此可按照預期特性設計band結構。目前高 頻元件正朝著高速化與高功率化兩個方向發展，實際上高頻 元件必需根據使用要求，並考慮材料物性後才能決定最適當 的元件材料與結構。 而，以砷化鎵（GaAs)為主的高電子移動率電晶體（High Electron Mobility Transistor，HEMT)，或稱之為高功率電晶體， 係比矽具有一較高的電子移動率（大約是6000cm2/V-s)和一 較低電源極電阻，使得以GaAs為主的元件可以操作在更高 的頻率。然而，GaAs具有一相對小的能隙（室溫下為1.42電 子伏特）和相對小的崩潰電壓，因此阻礙了以GaAs為主的 HEMT在高頻時提供高功率。 -5-AOC-05-31-TW 127721*2 IX. INSTRUCTIONS OF THE INVENTION · Technical Field of the Invention The present invention relates to a crystal structure of a nitride buffer layer of a high power transistor (HEMT), and more particularly to a buffer layer structure. (bulk GaN) A method of converting from N face (000 Ϊ) to Ga face (0001). [Prior Art] According to the recent development of information communication systems such as Internet and mobile phones, the speed and capacity of communication networks have become the consensus of all countries in the world, and the main pillar supporting the 1τ industry is compound semiconductors. Devices 化合物 Typical compound semiconductors such as GaAs and InP are used in high-frequency components, for the reason that their electrons move very fast. Compound semiconductors including mixed crystal semiconductors such as AlGaAs, InGaAs, and InGaP use a hetero structure, so that the band structure can be designed in accordance with the intended characteristics. At present, high-frequency components are moving in the direction of high speed and high power. In fact, high-frequency components must be determined according to the requirements of use, and the material properties of materials can be used to determine the most appropriate component materials and structures. However, a high-electron Mobility Transistor (HEMT) based on gallium arsenide (GaAs), or a high-power transistor, has a higher electron mobility than 矽 (about 6000cm2/Vs) and a lower power supply pole resistor allow GaAs-based components to operate at higher frequencies. However, GaAs has a relatively small energy gap (1.42 electron volts at room temperature) and a relatively small breakdown voltage, thus preventing the GaAs-based HEMT from providing high power at high frequencies. -5-
AOC-05-31-TW 1277212 是以，AlGaN/GaN半導體材料製造的改良集中關注於 AlGaN/GaN高功率電晶體用在高頻、高溫及高功率應用的 發展上。AlGaN/GaN有著大能隙，高峰值和飽和電子速度 值。這些特性使得AlGaN/GaN高功率電晶體可以在較高的 頻率下提供高功率。且因「AlGaN/GaN異質結構及其相關 元件HEMT因其較高的二維電子氣濃度、移動率及由此導 致優越高頻、高壓、高溫性能，理所當然的受到業者的重視。 而薛麗君及王燕等人在AlGaN/GaN異質結構極化行為與二 維電子氣」一文中，揭示其特性的影響。AOC-05-31-TW 1277212 is based on the fact that improvements in the fabrication of AlGaN/GaN semiconductor materials have focused on the development of high-frequency, high-temperature and high-power applications for AlGaN/GaN high-power transistors. AlGaN/GaN has large energy gaps, high peaks and saturated electron velocity values. These characteristics allow AlGaN/GaN high power transistors to provide high power at higher frequencies. And because of the high two-dimensional electron gas concentration and mobility of the AlGaN/GaN heterostructure and its related components, HEMT is naturally taken seriously by the industry. Xue Lijun and Wang Yan et al. reveal the influence of their properties in the polarization behavior of AlGaN/GaN heterostructures and two-dimensional electron gas.
即，GaN，A1N通常有穩定的六方纖鋅礦（Wurtzite lattice) 和併穩的立方閃鋅礦（Zincblende lattice)兩種結構。由於晶 體結構各自特有的對稱性，形成異質結構時晶格不匹配，產 生應力導致這兩種結構晶體會由於壓電效應而極化 (Polarization)。而纖鋅礦結構的晶體由於強離子性還有沿六 方c軸的自發極化，即形成無數規則分布的帶負電和帶正電 的原子，通常在GaN晶體内部具有不同極性的小區域會互相 抵消，所以極化效應（Polarization)不會累積。但當其與 AlGaN形成異質結構時，界面處的突變使得在緊鄰界面處某 種電極性區域佔優勢，而且由於兩種不同的晶格結合時在界 面處導致的壓電極化，這種帶電極化被進一步增強了。That is, GaN, A1N usually has two structures of a stable Wurtzite lattice and a stable cubic Zincblende lattice. Due to the unique symmetry of the crystal structures, the lattice mismatch occurs when the heterostructure is formed, and the stress is generated, which causes the two crystals to be polarized due to the piezoelectric effect. The crystals of wurtzite structure have spontaneous polarization along the hexagonal c-axis due to strong ionicity, that is, the formation of a myriad of regularly distributed negatively charged and positively charged atoms. Usually, small regions with different polarities inside the GaN crystal will mutually Offset, so Polarization does not accumulate. However, when it forms a heterostructure with AlGaN, the abrupt change at the interface makes an electrode region predominating at the interface, and the piezoelectric polarization at the interface due to the combination of two different crystal lattices. Theization has been further enhanced.
GaN沿六方c軸的兩個相反方向呈現不同的原子序列， 如第一圖所示，基本面是由陽離子Ga和陰離子N構成的六方 結構原子層，Ga面（Ga-face)指Ga在{0001}方向雙面層的頂 部，對應[0001]極性；同理，N面（N-face)對應[000Ϊ]極性，重 要的是，(〇〇〇 1)和（000Ϊ)面不等效，物理和化學特性存在差異。GaN exhibits different atomic sequences along two opposite directions of the hexagonal c-axis. As shown in the first figure, the fundamental plane is a hexagonal atomic layer composed of a cation Ga and an anion N, and a Ga-face refers to Ga at { 0001} The top of the double-sided layer corresponds to the [0001] polarity; for the same reason, the N-face corresponds to the [000Ϊ] polarity, and it is important that the (〇〇〇1) and (000Ϊ) faces are not equivalent. There are differences in physical and chemical properties.
AOC-05-31-TW 1277212 · 進一步分析，Ga面、N面異質結構在拉伸、壓縮和其他 情況下的自發和壓電極化的方向，界面處自發極化或壓電極 化互相加強或減弱。晶體結構的突變引起極化電荷的累積， 如果極化誘生的薄層電荷密度為正，自由電子將傾向於補償 這些極化誘生電荷，若異質結構能帶彎曲產生的勢壁足够高， 且界面狀況良好，那麼這些補償電子將被限制在一個很薄的 電子勢阱（Potential well)中運動，开》成二維空穴氣（2DHG)。 反之，如果界面極化誘生電荷為負，則引起空穴在界面位置 的累積，可形成一維空穴氣。對Ga(Al)面AlGaN/GaN異質 結構，極化誘生電荷為正，由於兩種材料自發極化強弱的不 同也會引起電子在界面的累積。對N面材料，自發極化和壓 電極化均與Ga面結構反向，極化誘生電荷為負，空穴在界面 處累積；如果GaN生長在AlGaN上，兩種極化效應反向，但由 於強度不同，同樣可產生界面誘生電荷，是否有2DEG生成， 需視具體情況而定。 是以，由上述文獻資料分析得知，Ga面和N面生長的材 料極性（Polarity)不同，2DEG補償正的誘生電荷現象會在異 質結構的不同界面處存在，其整體效果如第二圖所示，了解 此一結果有助於HEMT等元件設計。 到目前為止，從熔體中生長GaN單晶體的問題尚未解 決，只能得到針狀或小尺寸的片狀GaN晶體。因此GaN材 料只能由異質磊晶生長，在諸多種基底材料中現在用得最多 的是藍寶石（Al2〇3)，以其為基底的GaN/GalnN藍、綠光發光 二極體（LED)已經商品化，另藍光雷射二極體（LD)已達到實 用階段。藍寶石具有與纖辞礦III族氮化物相同的對稱性， -7 -AOC-05-31-TW 1277212 · Further analysis, in the direction of spontaneous and piezoelectric polarization of Ga-face and N-face heterostructures under tensile, compressive and other conditions, spontaneous polarization or piezoelectric polarization at the interface reinforces or weakens each other. . The mutation of the crystal structure causes the accumulation of polarized charges. If the polarization-induced thin layer charge density is positive, the free electrons will tend to compensate for these polarization induced charges. If the heterogeneous structure can bend, the potential wall is high enough. And the interface is in good condition, then these compensating electrons will be limited to move in a very thin electronic well, which is a two-dimensional hole gas (2DHG). On the other hand, if the interface polarization induced charge is negative, the accumulation of holes at the interface position is caused, and one-dimensional hole gas can be formed. For the Ga(Al) plane AlGaN/GaN heterostructure, the polarization induced charge is positive, and the difference in the spontaneous polarization of the two materials also causes the electrons to accumulate at the interface. For the N-face material, the spontaneous polarization and the piezoelectric polarization are opposite to the Ga-face structure, the polarization induced charge is negative, and the holes accumulate at the interface; if GaN is grown on AlGaN, the two polarization effects are reversed. However, due to the different strengths, the interface induced charge can also be generated, and whether 2DEG is generated depends on the specific situation. Therefore, it is known from the above literature data that the polarity of the material on the Ga surface and the N surface is different, and the positive induced charge phenomenon of the 2DEG compensation exists at different interfaces of the heterostructure, and the overall effect is as shown in the second figure. As shown, understanding this result contributes to component design such as HEMT. So far, the problem of growing a GaN single crystal from a melt has not been solved, and only a needle-like or small-sized sheet-like GaN crystal can be obtained. Therefore, GaN materials can only be grown by heteroepitaxial epitaxy. Among the various base materials, sapphire (Al2〇3) is now used most, and GaN/GalnN blue and green light-emitting diodes (LEDs) based on it have been used. Commercialized, another blue laser diode (LD) has reached a practical stage. Sapphire has the same symmetry as the Quartet Group III nitride, -7 -
AOC-05-31-TW 1277212 · 其製備工藝成熟、價袼較低、可生長大直徑材料、高溫下 熱穩定性良好等一系列優點。但是，藍寶石不導電、解離困 難、晶格常數與GaN有近15%的差異，而且熱膨脹係數也相 差較大，常用的晶面為Ga(OOOl)面。磊晶生長GaN的方法主 要為金屬有機物氣相蠢晶（Metai-〇rganic Vapor Phase Epitaxy，MOVPE)，分子束磊晶（MBE)和氣相磊晶（νρΕ)。目前 MOVPE是在III-V族氮化物磊晶生長中使用得最多且材料 質量最好的方法。 【發明内容】 緣疋，本發明之主要目的，係在提供一種在磊晶過程中 幫助將N面（000Ϊ)的氮化鎵（GaN)緩衝體轉換為Ga面（〇〇〇1) 的GaN，俾作為GaN HEMT結構的運用，不僅可提高二維電 子氣（2DED)的濃度，而且還可提昇其電子移動率（M〇bmty)， 增進高功率電晶體的品質及使用壽命。 為達上述目的，本發明所採用之方法，其實施步驟包含 有： a) ·提供一藍寶石（A1203)基板； b) .在該藍寶石基板上成長氮化鋁（A1N)成核層 (nucleation); c) .在該成核層上成長氮化錄（GaN)緩衝以及 d) .在該GaN緩衝層上成長GaN系統電晶體蠢晶結構； 其特徵在於： 該基板在成長該成核層之前，先通入氨氣(顺3)做氣化 (Ni—)處理，且在此-氮化過程的最後8〜12秒將氨氣 (nh3)關 #，然 m m 甲基鋁（Trimethyl -8 -AOC-05-31-TW 1277212 · It has a series of advantages such as mature preparation process, low price, large diameter material and good thermal stability at high temperature. However, sapphire is not conductive, dissociated, lattice constant is nearly 15% different from GaN, and the coefficient of thermal expansion is also quite different. The commonly used crystal plane is Ga(OOOl) plane. The methods for epitaxial growth of GaN are mainly metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE) and vapor phase epitaxy (νρΕ). At present, MOVPE is the most used and best material quality in the III-V nitride epitaxial growth. SUMMARY OF THE INVENTION The main object of the present invention is to provide a GaN which assists in converting an N-plane (000 Å) gallium nitride (GaN) buffer to a Ga surface (〇〇〇1) during epitaxy. As a GaN HEMT structure, 俾 not only can increase the concentration of two-dimensional electron gas (2DED), but also increase its electron mobility (M〇bmty), and improve the quality and service life of high-power transistors. To achieve the above object, the method of the present invention comprises the steps of: a) providing a sapphire (A1203) substrate; b) growing an aluminum nitride (A1N) nucleation layer on the sapphire substrate. c) growing a nitride recording (GaN) buffer on the nucleation layer and d) growing a GaN system transistor silicial structure on the GaN buffer layer; characterized in that: the substrate is grown before the nucleation layer First, enter ammonia gas (cis 3) for gasification (Ni-) treatment, and in the last 8 to 12 seconds of the nitriding process, ammonia gas (nh3) is turned off #, then mm methyl aluminum (Trimethyl -8) -
AOC-05-31-TW 1277212 ·AOC-05-31-TW 1277212 ·
Ahmiiniiim，TMA1)之後，再成長該ain成核層及GaN緩衝層， 據以將該緩衝層之N面（000Ϊ)轉換為Ga面（0001)。 依據前揭發明特徵，其係包括使用MOVPE方法來形成， 但不限定於此；且該A1N成核層之厚度約為25〇人，而緩衝層 之厚度為2.5 //m。 【實施方式】 首先，請參閱第三、四圖所示，本發明高功率電晶體 (HEMT)氮化物緩衝結構由N面（000Ϊ)轉換為Ga面（0001)之 | 方法，包括使用MOVPE方法來形成為較佳，但不限定於 此，MBE、VPE等方法亦可視需求使用，其實施步驟包含： a) ·首先，如第三圖⑷所示，提供一藍寶石（Al2〇3)基板 (10);雖然基板（10)之材質亦可為碳化石夕（Sic)、石夕（si)，但仍以 藍寶石（Sapphire，Ah〇3)為較佳。本發明較佳實施例包括進 行基板（1 〇)之熱洗（Thermal Cleaning)步驟，此熱洗步驟可在 溫度1200°C之氫氣（H2)環境下進行，以清潔基板（1〇)，但不限 定於此。 b) .—般在高溫的解離（Desorption)之後，降至低溫成長 ® 氮化紹（A1N)成核層（20)前。會先通入氨氣（Nh3)做氮化 (Nitddation)處理，而本發明之特徵在於：該基板（1〇)在氮化 過程的最後8〜12秒將氨氣（NH3)關掉，然後通入少量的三曱 - 基鋁（Trimethyl Aluminium，TMA1)，之後成長低溫氮化鋁 (A1N)成核層（2〇)約25〇人。如第三圖（b)所示。 c) ·成長完成核層（20)之後，接著在該成核層（20)上成長 GaN緩衝層（30)約。如第三圖（c)所示。 而由A1N成核層（20)及GaN緩衝層（30)所構成之中間 -9-After Ahmiiniiim, TMA1), the ain nucleation layer and the GaN buffer layer are further grown, and the N face (000 Å) of the buffer layer is converted into a Ga face (0001). According to the features of the foregoing invention, the method includes, but is not limited to, using the MOVPE method; and the thickness of the A1N nucleation layer is about 25 Å, and the thickness of the buffer layer is 2.5 // m. [Embodiment] First, referring to the third and fourth figures, the method for converting a high power transistor (HEMT) nitride buffer structure of the present invention from N face (000 Ϊ) to Ga face (0001) includes using the MOVPE method. The method is preferably formed, but is not limited thereto, and methods such as MBE and VPE are also used as required, and the implementation steps include: a) First, as shown in the third figure (4), a sapphire (Al2〇3) substrate is provided ( 10); although the material of the substrate (10) may be carbonized stone (Sic) or Si Xi (si), sapphire (Sapphire, Ah〇3) is preferred. A preferred embodiment of the present invention includes a step of performing a thermal cleaning of a substrate (1 〇), which can be performed in a hydrogen (H 2 ) atmosphere at a temperature of 1200 ° C to clean the substrate (1 〇), but It is not limited to this. b). After the high temperature dissociation, it is reduced to the low temperature growth ® nitriding (A1N) nucleation layer (20). Nitrogen gas (Nh3) is first introduced for Nitrification treatment, and the present invention is characterized in that the substrate (1〇) turns off ammonia (NH3) in the last 8 to 12 seconds of the nitridation process, and then A small amount of Trimethyl Aluminium (TMA1) was introduced, and then a low-temperature aluminum nitride (A1N) nucleation layer (2〇) was grown to about 25 。. As shown in the third figure (b). c) After the completion of the completion of the core layer (20), a GaN buffer layer (30) is grown on the nucleation layer (20). As shown in the third figure (c). And the middle of the A1N nucleation layer (20) and the GaN buffer layer (30)
AOC-05-31-TW AOC-05-31-TW1277212 層（90a)，一般係於500〜600°C的低溫下於該藍寶石基板（10) 上成長，其先成長一崎嶇不平的柱狀A1N或GaN晶體，且以 不規格柱狀A1N或G a N晶體作為基礎，在上升的溫度下成長 晶體時，該晶體甚至在側方向上成長，當晶體成長到某一厚 度時，可相當地簡化平坦單一晶體成長。在低溫下成長之 A1N或GaN中間層（90a)上成長該GaN或AlGaN晶體之優 點為可改進在基板（10)與GaN/AlGaN之間晶格不匹配所導 致的缺點，且可改善膨脹係數差，然在低溫下於藍寶石（ai2o3) 基板（10)上成長之AlN/GaN中間層（90a)在晶體化開始時，控 制晶體性能，此又控制此後將成長之GaN或AlGaN晶體性 能，因為AlN/GaN上成長之GaN/AlGaN的晶體缺陷需視在 藍寶石基板（10)上成長之AlN/GaN的初始晶體而定。本發 明係要提供一高功率電晶體(HEMT)應用，於GaN，該電晶體 磊晶結構（90b)之元件層顯示對基板（晶體平面及極性）以及 元件層方向性有強力相依性。 如第四圖所示，形成AlN/GaN中間層（90a)之後，將溫度 提升至1100〜1200°C，並於此溫度環境下，在該GaN緩衝層 (30)上成長GaN系統電晶體磊晶結構(9〇b)，使其形成一高功 率電晶體（1〇〇)結構。此一元件層可為習知技術所形成，其大 體上包含有： 一由氮化鎵（GaN)所構成的通道層（4〇)係形成於該中間 之GaN緩衝層（30)上； 一由未摻雜氮化鋁鎵（U-AlGaN)所構成之障壁層（5〇)係 形成於該通道層（40)上； 位於AlGaN障壁層（50)上之歐姆接點，用以提供源極（s) •10-AOC-05-31-TW AOC-05-31-TW1277212 layer (90a), generally grown on the sapphire substrate (10) at a low temperature of 500~600 °C, which first grows a rugged columnar A1N Or a GaN crystal, and based on a non-standard columnar A1N or GaN crystal, the crystal grows even in the lateral direction when the crystal is grown at an elevated temperature, and is considerably simplified when the crystal grows to a certain thickness. Flat single crystal grows. The advantage of growing the GaN or AlGaN crystal on the A1N or GaN intermediate layer (90a) grown at a low temperature is that the disadvantages caused by lattice mismatch between the substrate (10) and GaN/AlGaN can be improved, and the expansion coefficient can be improved. Poor, the AlN/GaN intermediate layer (90a) grown on the sapphire (ai2o3) substrate (10) at low temperatures controls the crystal properties at the beginning of crystallization, which in turn controls the performance of the GaN or AlGaN crystals that will grow thereafter because The crystal defects of GaN/AlGaN grown on AlN/GaN depend on the initial crystal of AlN/GaN grown on the sapphire substrate (10). The present invention is directed to a high power transistor (HEMT) application in GaN. The device layer of the epitaxial structure (90b) exhibits strong dependence on the substrate (crystal plane and polarity) and the directionality of the device layer. As shown in the fourth figure, after the AlN/GaN intermediate layer (90a) is formed, the temperature is raised to 1100 to 1200 ° C, and the GaN system transistor Lei is grown on the GaN buffer layer (30) under the temperature environment. The crystal structure (9〇b) is such that it forms a high-power transistor (1〇〇) structure. The element layer can be formed by a conventional technique, and generally includes: a channel layer (4 Å) formed of gallium nitride (GaN) is formed on the GaN buffer layer (30) in the middle; A barrier layer (5〇) composed of undoped aluminum gallium nitride (U-AlGaN) is formed on the channel layer (40); an ohmic contact on the AlGaN barrier layer (50) is used to provide a source Pole (s) • 10-
AOC-05-31-TW 1277212 及汲極（D);以及 配置於源極（8)與汲極間（D)之非歐姆閘極（G)接點。 以上元件層形成於該基板（10)及中間層（90a)後，即可製 備完成一高功率電晶體（HEMT)。AOC-05-31-TW 1277212 and drain (D); and non-ohmic gate (G) contacts placed between source (8) and drain (D). After the element layer is formed on the substrate (10) and the intermediate layer (90a), a high power transistor (HEMT) can be fabricated.
藉助上揭技術手段及方法，本發明在製備HEMT的過程 中，針對該元件層之特性需求，利用在氮化過程中的最後 8〜12秒將氮氣（NH3)關掉，然後通入少量的三甲基鋁（TMA1)， 其化學式（CH3)3A1，作為鋁（A1)的來源，另能以三甲基鎵 (TMGa)作為Ga的來源，而以氨氣(NH3)作為N的來源，在反 應器内進行化學反應，且得以H2或N2作為載體氣體用於載 送A1及Ga的來源。 在成完的GaN緩衝層（30)，先利用濕蝕刻（Wet Etching) 將表面處理過後，以掃描電子顯微術（SEM)的顯影形態 (morphology)去判斷即可清楚發現，本發明利用一方法有功 於將N-face的bulk GaN轉換為Ga-face的bulk GaN，亦即將 緩衝層之N面（οοοϊ)轉換為Ga面（0001)，而此一轉換有助於 HEMT元件層中二維電子氣（2DEG)的濃度增加，電子移動率 亦得以提昇。By means of the above-mentioned technical means and methods, in the process of preparing the HEMT, the nitrogen (NH3) is turned off in the last 8 to 12 seconds in the nitriding process for the characteristic requirements of the element layer, and then a small amount is introduced. Trimethylaluminum (TMA1), which has the chemical formula (CH3)3A1, is a source of aluminum (A1), and can use trimethylgallium (TMGa) as a source of Ga and ammonia (NH3) as a source of N. A chemical reaction is carried out in the reactor, and H2 or N2 is used as a carrier gas for carrying the source of A1 and Ga. After the finished GaN buffer layer (30) is first treated by wet etching (Wet Etching), it is clearly determined by scanning electron microscopy (SEM) development morphology, and the present invention utilizes a The method is effective in converting N-face bulk GaN into Ga-face bulk GaN, that is, converting the N-plane (οοοϊ) of the buffer layer into Ga-face (0001), and this conversion contributes to two-dimensionality in the HEMT component layer. The concentration of electronic gas (2DEG) increases and the electron mobility increases.
Λ所述，本發明所揭示之技術手段，確具「新穎性」、 進步性 P 局· 」及「可供產業利用」等發明專利要件，祈請鈞 〜賜專利，以勵發明，無任德感。 大凡熟所揭露之圖式、說明，僅為本發明之較佳實施例: 變化^、、、$此項技藝人士，依本案精神範疇所作之修飾或等效 75應包括本案申請專利範圍内。 -11 -As described in the above, the technical means disclosed by the present invention have the invention patents such as "novelty", progressive P Bureau, and "available for industrial use", and pray for a patent to encourage invention. German sense. The drawings and descriptions disclosed in the above are merely preferred embodiments of the present invention: Variations, equivalents, or equivalents made by the skilled person in accordance with the spirit of the present invention shall be included in the scope of the patent application of the present application. -11 -
AOC-05-31-TW 1277212 · 【圖式簡單說明】 第一圖係習用文獻中有關GaN的原子序列結構示意 圖。 第二圖係習用文献中有關Ga面、N面AlGaN/GaN異 質結構中誘生電荷之不意圖。 第三圖係本發明磊晶過程之示意圖。 第四圖係本發明HEMT之結構截面圖。 > 【主要元件符號說明】 (10)基板 (20)成核層 (30)緩衝層 (40)通道層 (50)障壁層 (60)源極 (70)閘極 (80)没極 • (90a)中間層 (90b)電晶體磊晶結構 (100)高功率電晶體 -12-AOC-05-31-TW 1277212 · [Simplified Schematic] The first figure is a schematic diagram of the atomic sequence structure of GaN in the literature. The second figure is a discourse on the induced charge in the Ga surface and N-plane AlGaN/GaN heterostructures in the conventional literature. The third figure is a schematic diagram of the epitaxial process of the present invention. The fourth figure is a cross-sectional view of the structure of the HEMT of the present invention. > [Description of main component symbols] (10) Substrate (20) nucleation layer (30) Buffer layer (40) Channel layer (50) Barrier layer (60) Source (70) Gate (80) No pole • ( 90a) Intermediate layer (90b) transistor epitaxial structure (100) high power transistor-12-
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| CN104409497A (en) * | 2014-11-26 | 2015-03-11 | 西安电子科技大学 | La base gate based AlGaN/GaN high electron mobility transistor and manufacturing method |
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| US10672763B2 (en) | 2016-06-14 | 2020-06-02 | Chih-Shu Huang | Epitaxial structure of Ga-face group III nitride, active device, and method for fabricating the same |
| US12107187B2 (en) | 2019-12-05 | 2024-10-01 | Enkris Semiconductor, Inc. | Semiconductor structures and manufacturing methods thereof |
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