(1) 1277149 玖、發明說明 【發明所屬之技術領域】 本發明係關於半導體裝置的製造方法、半導體製造裝 置的自動運轉方法及自動運轉系統、以及CMP ( Chemical Mechanical Polishing :化學機械硏磨）裝置的自動運轉方 法，特別是關於有效適用於多種少量生產之半導體裝置之 製造工程的 APC(Advanced Process Control:先進製程控 制）技術之技術。 【先前技術】 A 、 /. 本發明人所討的技術中，例如，在半導體製造裝置 之CMP裝^於硏磨初期，由於硏磨率不穩定故，乃 思考將(^擬:晶)片夢成起始虛擬晶片做初期硏磨，在硏磨率 —----------------〆夕 -..........- 一.. .. -一.…..―， 穩定後，才產品晶圓，以謀求處理的穩定化及精度的 提升。 …^ 、〜\ . ... 但是，在多數之情形下，需要各別設g虛擬晶圓之 理條件（程式）和產品晶圓之處理條件（程ϋΓ 了本來， 在往0指示、控制產品的處理條件之自動化邁進上，虛擬 / 〜 一…...............…............................ 晶,的處理成爲瓶頸。 半導體製造裝置之CMP裝置的自動運轉方法中，有 由硏磨前之膜厚資料和硏磨後的膜厚資料之差，以及實際 的硏磨時間，以算出最新的硏磨率，由工廠的主電腦將製 程程式資訊當成最佳程式而設定於CMP裝置之方法（例 如’參考專利文獻1 )。 (2) 1277149 另外，存在有以前饋式決定進行CMP後的膜厚之條 件，以進行以後之蝕刻處理的方法（例如，參考專利文獻 2 ) ° 另外，存在有對硏磨後的晶圓m見^光線，藉由光 ——一s'. 學感測器以測量晶圓的膜厚，將測量結果送回控制部，以 設定下一晶圓的硏磨時間之方法（例如，參考專利文獻 3 ) ° 另外，存在有在硏磨中，對晶圓照射紅外雷射光束， 一-~~~·- — --- 藉由測量反射光的都卜勒位移量，以測量硏磨膜厚的變化 之方法（例如，參考專利文獻4 )。 另外，存在有在CMP中，由晶圓的反射光強度、頻 率頻譜以界定不是受到裝置圖案的影響之比較平坦的區 域’以高精度地測量晶圓的膜厚之方法（例如，參考專利 文獻5 )。 另外，存在有由投入的批量之硏磨前的膜厚資料和硏 磨後的膜厚資料的差和實際的硏磨時間，以算出最新的硏 磨率’當成變動參數加以保存，配合程式固定部份和程式 變動部份而當成最佳程式以設定在CMP裝置之方法（例 如’參考專利文獻6 )。 另外，存在有以CMP裝置加工前導晶圓，測量其之 膜厚，依據其測量結果，設定本體晶圓的硏磨時間以做加 工’測量、計算殘留膜厚，以判定需要再硏磨之晶圓的方 法（例如，參考專利文獻7 )。 [專利文獻1 ] -6- (3) 1277149 日本專利特開平1 1 - 1 8 6204號公報 [專利文獻2] 日本專利特開2 0 0 2 - 1 5 1 4 6 5號公報 [專利文獻3] 日本專利特開0 8 - 1 7 7 6 8號公報 [專利文獻4] 日本專利特開2000-3 5 3 1 6號公報 [專利文獻5] 曰本專利特開2003 -4272 1號公報 [專利文獻6] 曰本專利特開平1卜1 8 6204號公報 [專利文獻7] 曰本專利特開2000- 1 5 5 74號公報 【發明內容】 可是，在如前述之CMP裝置的自動化技術中，本發 明人檢討的結果，以下之事情變得很淸楚。 例如，如前述般，在將虛擬晶圓當成起始虛擬晶圓而 硏磨之情形，需要各別設定虛擬晶圓之處理條件（程式） 和產品晶圓之處理條件（程式），本來，在往只指示、控 」_.......一...... ； 制產品的處理條件之自動化邁進上，虛擬晶圓的處理成爲 瓶頸。 在CMP (化學機械硏磨）工程中，爲了可無人化運 轉，進而必須廢止先於產品處理之作業。其對里有記載於 一々——一一‘.'一一一一 —— 一-— (4) 1277149 專利文獻1之方法。專利文獻1所記載之方法係配合 CMP前後的製程，利用主電腦而高精度地進行裝置的製 造。但是，在批量篆置„^mm —^一..一 -— 量裝置有位於與硏磨裝置不同場所之„憒.胜.，其之搬運控制 變得複雜。另外，加工結果藉由測量知道爲止，須花時 間，控制上產生延遲，控制精度降麗.，瓦里逐:ί 刻變化的CMP工程中，處理的響應性並不充#。 v. , ............... ...............—〜，-一* 另外，專利文獻2所記載之方法係前饋CMP後的膜 厚，以使用於特別是蝕刻工程的控制，但是，並無對於 CMP之回饋，或者對於CMP後之CVD工程之回饋。 因此，本發明之目的在於提供：於CMP工程等人工 作業比率高的半導體製造工程中，推進自動化，可謀求少 人化合理化、處理能力提升、投資金額壓縮、間接業務效 率提升之半導體裝置之製造方法、半導體裝置的自動化運 轉方法及自動運轉系統、及CMP裝置的自動運轉方法。 本發明之前述以及其他目的和新的特徵，由本說明書 之記載以及所附圖面，理應會變得淸楚。 [解決課題之手段] 如簡單說明在本申請案所揭示之發明中的代表性者的 槪要，則如下述： 即依據本發明之半導體裝置之製造方法、半導體製造 裝置的自動運轉方法及自動運轉系統、及C Μ P裝置的自 動運轉方法係在CMP處理中，只將產品晶圓的處理程式 (5) 1277149 (處理條件）由主電腦下載於CMP裝置，在_處理產品晶 遷y事先決定的處理ilii?—虛擬晶圓的處理，藉 、此，以實現無m轉。 另外，藉由將搭載於無人化運轉之CMP裝置的膜厚 -〆· -〜.二—..' '.....-............ ...—...…. ......... -, - _ 〜一…(1) 1277149 TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, an automatic operation method of the semiconductor manufacturing apparatus, an automatic operation system, and a CMP (Chemical Mechanical Polishing) device. The automatic operation method, in particular, the technology of APC (Advanced Process Control) technology which is effectively applied to the manufacturing process of a plurality of small-scale semiconductor devices. [Prior Art] A, /. In the technique discussed by the present inventors, for example, in the initial stage of honing of a semiconductor manufacturing apparatus, since the honing rate is unstable, it is considered to be a film. Dreaming into the initial virtual chip to do the initial honing, in the honing rate ----------------- 〆 - -........ - one.. - One...-, After the stabilization, the product wafer is processed to improve the stability and accuracy of the processing. ...^,~\ . . . . However, in most cases, it is necessary to set the conditions (programs) of the virtual wafers and the processing conditions of the product wafers. The automation of the processing conditions of the product is on, virtual / ~ a......................................... ........ The processing of crystals becomes a bottleneck. In the automatic operation method of the CMP apparatus of the semiconductor manufacturing apparatus, there is a difference between the film thickness data before honing and the film thickness data after honing, and the actual The method of setting the honing rate to the CMP device by calculating the latest honing rate by the main computer of the factory as the best program (for example, 'Reference Patent Document 1). (2) 1277149 In addition, there are The feed method determines the condition of the film thickness after CMP for the subsequent etching treatment (for example, refer to Patent Document 2). In addition, there is a light for the honed wafer m, by light - a method of measuring the film thickness of the wafer and sending the measurement result back to the control unit to set the honing time of the next wafer (for example Reference Patent Document 3) ° In addition, there is an infrared laser beam that is irradiated to the wafer during honing, and a measurement is performed by measuring the Doppler shift amount of the reflected light. A method of honing the change in film thickness (for example, refer to Patent Document 4). In addition, there is a relatively flat region defined by the reflected light intensity and frequency spectrum of the wafer in CMP to define that it is not affected by the pattern of the device. A method of measuring the film thickness of a wafer with high precision (for example, refer to Patent Document 5). In addition, there is a difference between the film thickness data before the honing of the input batch and the film thickness data after honing, and the actual flaw. The grinding time is calculated by calculating the latest honing rate as a variation parameter, and matching the program fixed portion and the program variation portion as a preferred program to set the CMP device (for example, 'Reference Patent Document 6). There is a processing wafer processed by a CMP device, and the film thickness is measured. According to the measurement result, the honing time of the body wafer is set to be processed to measure and calculate the residual film thickness to determine the wafer to be honed. (For example, refer to Patent Document 7). [Patent Document 1] -6- (3) 1277149 Japanese Patent Laid-Open Publication No. Hei No. 1 - 1 8 6204 [Patent Document 2] Japanese Patent Laid-Open No. 2 0 0 2 - 1 5 Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. 2000-158. In the automation technology of the CMP apparatus as described above, the results of the review by the inventors have made the following things very difficult. For example, as described above, in the case of considering a virtual wafer as a starting virtual wafer, it is necessary to separately set processing conditions (programs) of the virtual wafer and processing conditions (programs) of the product wafer, originally, To the instruction and control only _....... one... The automation of the processing conditions of the manufactured products has made the processing of virtual wafers a bottleneck. In the CMP (Chemical Mechanical Honing) project, in order to be unmanned, it is necessary to abolish operations prior to product handling. The method of Patent Document 1 is described in the pair of one--one ‘.’ one-one one-one--(4) 1277149. The method described in Patent Document 1 is based on a process before and after CMP, and the device is manufactured with high precision using a host computer. However, in the batch setting „^mm—^一..一——the measuring device has a different location from the honing device, and its handling control becomes complicated. In addition, the processing results are known by measurement, and it takes time to delay the control, and the control accuracy is reduced. In the CMP project where the etch is changed, the responsiveness of the processing is not charged. v. , .................................~~, -1* In addition, the method described in Patent Document 2 is The film thickness after CMP is applied for control, especially for etching engineering, but there is no feedback for CMP or feedback for CVD engineering after CMP. In view of the above, it is an object of the present invention to provide a semiconductor device for manufacturing a semiconductor manufacturing project having a high labor ratio, such as a CMP project, and to promote automation, and to reduce the number of people, improve processing power, reduce investment amount, and improve indirect business efficiency. The method, the automatic operation method of the semiconductor device, the automatic operation system, and the automatic operation method of the CMP device. The above and other objects and novel features of the present invention will become apparent from the description and appended claims. [Means for Solving the Problem] The brief description of the representative of the invention disclosed in the present application is as follows: the method for manufacturing a semiconductor device according to the present invention, the automatic operation method for the semiconductor manufacturing device, and the automatic The operation system and the automatic operation method of the C Μ P device are only used to download the product wafer processing program (5) 1277149 (processing conditions) from the host computer to the CMP device during the CMP process, and process the product y The decision to deal with ilii? - virtual wafer processing, borrowed, to achieve no m transfer. In addition, by the film thickness of the CMP device to be mounted on the unmanned operation - 〆· -.2 -..' '.....-............ ...…. ......... -, - _ ~One…
測量裝置的測量資料與硏磨時間等處理資料一同由 CMP __^ -—…〜一 ——π料叫〜仰 ' ' 、-· —.. .一一,一‘一-···u-·，一w.· . 裝置傳送給主電腦，令依據„屋童亂資料以變.置c ... .................. __........· 一.^ ' 的程式之條件成爲可能，藉由前述膜厚測量資料以前饋式 地活用於下一工程的處理條件，省略下一工程之測量工 程。 另外」依據本發明之半導jtm霊的自動運轉系統 係可由潔淨室外的終端藉由網路以變更位於主電腦內之每 一產品的處理程式之參數的系統。 具體如下= (1) 依據本發明之半導體裝置之製造方法，其特徵 爲具有·_由主電腦對於半導體製造裝置傳送產品晶圓之處 理條件之步驟，J □依J盾裏.先定..敗處理條件，在前述半導 體製造裝置中自動地處理龜擬„晶,麗ϋ麗_，和依循前述所 傳送之產品晶圓之處理條件，在前述半導體製造裝置中處 理前述產品晶圓之步驟。 (2) 前述（1)之半導體裝置之製造方法，進而具 有：在前亂ΙΛ _之處理中途或結束時，藉由搭載在前 述半導體_製_造名。屬之膜暴測量裝置以測量形成在前述產品 一·一‘一 '‘ . ·…了 . 晶圓i: _ 之膜肩J黑厚之步驟，和將前述測量之膜厚資料及前 述半導體製造裝置的處理資料傳送給前述主電腦之步驟， -9- (6) 1277149 和依據前述所傳送之膜厚資料及處理資料，於前述主電腦 決定在前述半導體製造裝置中，之後所處理之產品晶圓的 處理條件之步驟。 (3) 前述（1)之半導體裝置之製造方法，進而具 有：在前述產品晶圓之處理中途或結束時，藉由搭載在前 述半導體製造裝置之膜厚測量裝置以測量形成在前述產品 晶圓上之膜的膜厚之步驟，和將前述測量之膜厚資料傳送 給前述主電腦之步驟，和依據前述所傳送之膜厚資料，於 前述主電腦決定前述產品晶圓之下一工程的處理條件之步 驟。 (4) 前述（2)之半導體裝置之製造方法，進而具 有：依據前述所傳送之膜厚資料，在前述主電腦中決定前 述產品晶圓之下一工程的處理條件之步驟。 (5 )依據本發明之半導體製造裝置的自動運轉方 法，其特徵爲具有：將產品晶圓之處理條件由主電腦傳送 給半導體製造裝置之步驟，和依循事先所決定的處理條 件，在前述半導體製造裝置中，自動地處理虛擬晶圓之步 驟，和依循前述所傳送之產品晶圓的處理條件，在前述半 導體製造裝置中處理前述產品晶圓之步驟。 (6)前述（5)之半導體製造裝置的自動運轉方法， 進而具有：在前述產品晶圓之處理中途或結束時，藉由搭 載在前述半導體製造裝置之膜厚測量裝置以測量形成在前 述產品晶圓上之膜的膜厚之步驟，和將前述測量之膜厚資 料及前述半導體製造裝置的處理資料傳送給前述主電腦之 -10- (7) 1277149 步驟，和依據前述所傳送之膜厚資料及處理資料，於前述 主電腦決定在前述半導體製造裝置中，之後所處理之產品 晶圓的處理條件之步驟。 (7) 前述（5)之半導體製造裝置的自動運轉方法， 進而具有：在前述產品晶圓之處理中途或結束時，藉由搭 載在前述半導體製造裝置之膜厚測量裝置以測量形成在前 述產品晶圓上之膜的膜厚之步驟，和將前述測量之膜厚資 料傳送給前述主電腦之步驟，和依據前述所傳送之膜厚資 料，於前述主電腦決定前述產品晶圓之下一工程的處理條 件之步驟。 (8) 前述（6)之半導體製造裝置的自動運轉方法， 進而具有：依據前述所傳送之膜厚資料，在前述主電腦中 決定前述產品晶圓之下一工程的處理條件之步驟。 (9 )依據本發明之CMP裝置的自動運轉方法，其特 徵爲具有：將產品晶圓之處理條件由主電腦傳送給C Μ P 裝置之步驟，和依循事先所決定的處理條件，在前述 CMP裝置中’自動地處理虛擬晶圓之步驟，和依循前述 所傳送之產品晶圓的處理條件，在前述CMP裝置中處理 則述產品晶圓之步驟。 (1 〇 )目II述（9 )之C Μ Ρ裝置的自動運轉方法，進而 具有：在則述產品晶圓之處理中途或結束時，藉由搭載在 前述CMP裝置之膜厚測量裝置以測量形成在前述產品晶 圓上之Θ吴的膜厚之步驟，和將前述測量之膜厚資料及前述 CMP裝置的處理資料傳送給前述主電腦之步驟，和依據 -11 - 1277149 (8) 前述所傳送之膜厚資料及處理資料，於前述主電腦決定在 前述C MP裝置中，之後所處理之產品晶圓的硏磨時間之 步驟。 (1 1 )前述（9 )之CMP裝置的自動運轉方法，進而 具有：在前述產品晶圓之處理中途或結束時，藉由搭載在 前述C MP裝置之膜厚測量裝置以測量形成在前述產品晶 圓上之膜的膜厚之步驟，和將前述測量之膜厚資料傳送給 前述主電腦之步驟，和依據前述所傳送之膜厚資料，於前 述主電腦決定前述產品晶圓之下一工程的處理條件之步 驟。 (12 )前述（10 )之CMP裝置的自動運轉方法，進 而具有：依據前述所傳送之膜厚資料，在前述主電腦中決 定前述產品晶圓之下一工程的處理條件之步驟。 (1 3 )依據本發明之半導體製造裝置的自動運轉系 統，其特徵爲：具有保有產品晶圓之處理條件之主電腦， 和控制半導體製造裝置之裝置控制部，前述裝置控制部係 在由前述主電腦對前述半導體製造裝置傳送前述產品晶圓 之處理條件時，依循事先決定之處理條件，在前述半導體 製造裝置中自動地處理虛擬晶圓（將被硏磨膜之薄膜形成 當成前處理所施行之虛擬晶圓），依循前述所傳送之產品 晶圓的處理條件，在前述半導體製造裝置中處理前述產品 晶圓。 (14)前述（13)之半導體製造裝置的自動運轉系 統，其中，前述裝置控制部係在前述產品晶圓之處理中途 -12- 1277149 Ο) 或結束時，藉由搭載在前述半導體製造裝置之膜厚測量裝 置，以測量形成在前述產品晶圓上之膜的膜厚，將前述測 量之膜厚資料及前述半導體裝置之處理資料傳送給前述主 電腦，前述主電腦依據前述所傳送之膜厚資料及處理資 料，決定在前述半導體製造裝置中，在之後所處理之產品 晶圓的處理條件。 (1 5 )前述（1 3 )之半導體製造裝置的自動運轉系 統，前述裝置控制部係在前述產品晶圓之處理中途或結束 φ 時，藉由搭載在前述半導體製造裝置之膜厚測量裝置，以 測量形成在前述產品晶圓上之膜的膜厚，將前述測量之膜 厚資料傳送給前述主電腦，前述主電腦依據前述所傳送之 膜厚資料，決定前述產品晶圓之下一工程的處理條件。 ' (16)前述（13)〜（15)之半導體製造裝置的自動 „ 運轉系統，前述主電腦和前述裝置控制部係藉由網路而連 接，可由連接於前述網路而位於潔淨室外之終端變更前述 主電腦內之前述產品晶圓的處理條件。 · 因此，如依據前述之半導體裝置之製造方法、半導體 製造裝置的自動運轉方法及自動運轉系統、及CMP裝置 的自動運轉方法，作業人員之等待時間減少，可少人化合 理化，提升處理能力，投資金額得以壓縮，間接業務效率 提升，配線層間膜厚的精度提升，產品之產品率也得以提 升。 【實施方式】 -13- 1277149 (10) 以下’依據圖面詳細說明本發明之實施形態。另外， 在說明實施形態之全部圖中，對於同一構件賦予相同符 號，省略其之重複說明。 第1圖係顯示在本發明之一實施形態中，半導體製造 裝置的自動運轉系統的構造及自動運轉方法之說明圖，第 2圖係顯示在本實施形態中，CMp裝置的處理流程說明 圖，第3 ( a )圖係顯示在本實施形態中的s TI構造之剖 面圖，第3 ( b )圖係顯示在本實施形態中的S TI處理流 程說明圖’第4 ( a )圖係顯示在本實施形態中的ild構 造之剖面圖’第4 ( b )圖係顯示在本實施形態中的ILD 的處理流程說明圖，第5 ( a )圖係顯示在本實施形態中 的IMD構造之剖面圖，第5 ( b )圖係顯示在本實施形態 中的IMD的處理流程說明圖，第6圖係顯示在本實施形 態中’半導體裝置之製造方法的一例之流程圖。 首先’依據第1圖，說明本實施形態之半導體製造裝 置的自動運轉系統的構造及自動運轉方法的一例。本實施 形態之半導體製造裝置，例如設爲CMP裝置1 1，由··控 制C Μ P裝置1 1之裝置控制部1 2、由虛擬晶圓用埠1 3及 產品晶圓用埠1 4所成之載入埠、進行晶圓的硏磨之硏磨 部1 5、進行晶圓的淸洗之淸洗部1 6、測量形成在晶圓上 之膜的膜厚之膜厚測量裝置1 7等所構成，設置在潔淨室 內。C Μ Ρ裝置1 1係藉由潔淨室內的網路1 8而與主電腦 1 9連接。 主電腦1 9係管理半導體製造工程’保有產品晶圓之 -14- (11) 1277149 產品晶圓的處理程式2 4、各產品·工程之參數2 5等資 訊。在主電腦1 9中，由各產品·工程之參數2 5等可計算 CMP裝置1 1的產品晶圓之硏磨時間ΡΤ(Ι)。所計算的硏 磨時間ΡΤ(Ι)則被取入產品晶圓之處理程式24。而且，藉 由從主電腦19將產品晶圓之處理程式24下載於CMP裝 置1 1，CMP裝置1 1可自動運轉。 在潔淨室內的網路1 8連接有終端2 0等，在潔淨室外 的網路2 1連接有終端22、23等，潔淨室內的網路1 8和 潔淨室外的網路2 1係相互連接。而且，可由終端2 0、 22、23等對保存在主電腦19或CMP裝置1 1之資料進行 閱覽或編輯。 CMP裝置1 1的虛擬晶圓之CMP處理係如第1圖之箭 頭所示般，具有：首先，虛擬晶圓由虛擬晶圓用瑋1 3被 移送於硏磨部1 5，在硏磨部1 5中，虛擬晶圓經過硏磨 後，被移往淸洗部1 6，在淸洗部1 6中，虛擬晶圓受到淸 洗後，被儲存於虛擬晶圓用埠1 3之各步驟。作爲前處 理，對此處所使用之虛擬晶圓施以被硏磨膜之薄膜形成X 程，更提高作爲起始虛擬晶圓之功能。例如，在產品晶圓 中硏磨金屬膜之情形下，當成前處理施以相同金屬膜或氧 化膜（Si02膜等）形成工程，另外，在產品硏磨絕緣膜之 情形下，當成前處理同樣地施以氧化膜（Si 02膜等）形成 工程。接著，產品晶圓之CMP處理係具有：由產品晶圓 用埠1 4對於硏磨部1 5移送產品晶圓，在硏磨部1 5中將 產品晶圓做完硏磨後，移送於淸洗部1 6，在淸洗部1 6中 -15- (12) 1277149 將產品晶圓淸洗後，移送於膜厚測量裝置1 7，在膜厚測 量裝置1 7中’測量形成在產品晶圓上之膜的膜厚後，儲 存於產品晶圓用埠1 4之各步驟。膜厚之測量資料和^ΜΡ 裝置的處理資料係當成結束資料26，由CMP裝置i 1被 送往主電腦1 9。 接著，依據第2圖〜第6圖，說明在本實施形態中包 含前述之CMP處理工程的半導體裝置之製造方法及半導 體製造裝置的自動運轉方法之一例。本實施形態之半導體 裝置之製造方法及半導體製造裝置的自動運轉方法，在 C MP處理工程中，係具有以下各步驟。 如第2圖所示般，CMP裝置1 1事先保有虛擬晶圓的 處理程式（處理條件）27，在產品晶圓之處理程式24由 主電腦1 9被下載於CMP裝置1 1時，依循事先決定的處 理條件，自動地處理虛擬晶圓2 8。非產品之晶圓被當成 開始虛擬晶圓或起始虛擬晶圓在由硏磨部1 5及淸洗部1 6 所形成的晶圓處理部29中，進行CMP處理。在CMP處 理後，虛擬晶圓28被儲存在晶圓儲存部3 0。在產品晶圓 之處理程式24由主電腦19被下載於CMP裝置1 1時，藉 由自動地處理虛擬晶圓2 8，半導體製造工程的自動化變 得容易。 虛擬晶圓2 8係佔有載入埠中的1個，或儲存在CMP 裝置1 1內保有虛擬晶圓2 8用的緩衝槽。CMP裝置1 1內 的裝置控制部1 2雖處理由虛擬晶圓之處理程式2 7所決定 的片數，但是，進行應均等使用所儲存之虛擬晶圓2 8而 -16- (13) 1277149 令依序處理虛擬晶圓28之棚架管理。另外，CMP裝置1 1 內的裝置控制部1 2管理虛擬晶圓2 8的使用次數或累積使 用量，在到達特定的使用量（時間、次數等）時，產生警 示。超過使用量之虛擬晶圓在被儲存於移載體時，對主電 腦1 9送出卸載之要求，超過使用量之虛擬晶圓自動地被 卸載。 虛擬晶圓2 8之處理後，依循自主電腦1 9所下載之產 品晶圓之處理程式24，產品晶圓3 1在晶圓處理部29中 進行CMP處理。 藉由搭載於CMP裝置1 1的膜厚測量裝置1 7，在產 品晶圓3 1之硏磨、淸洗的中途或結束時，至少1次測量 形成在產品晶圓3 1上之膜的膜厚，膜厚的測量雖也可在 硏磨前爲之，但是，在前工程中已經測量膜厚之情形，可 由該硏磨前之膜厚和硏磨厚的膜厚計算硏磨率故，並不特 別需要硏磨前的膜厚測量。 之後，產品晶圓3 1的CMP處理結束後，由CMP裝 置1 1將由硏磨頭及硏磨墊的使用時間、硏磨時間、硏磨 壓力、旋轉數、漿料量等處理資料和膜厚測量資料所成之 結束資料26傳送給主電腦1 9。 然後，依據由CMP裝置1 1所傳送之膜厚測量資料及 處理資料和產品晶圓之各硏磨層的參數，在主電腦1 9中 決定接著處理之產品晶圓的硏磨時間等處理條件。 如以上般’錯由即時更新處理條件的最新資訊，即時 之回饋成爲可能。作爲將最新資訊回饋給接著處理之批次 -17- (14) 1277149 的方法，例如藉由下述式子來決定硏磨時間pt(i)。 硏磨時間 PT(I)= f(硏磨前膜厚（I )、硏磨前膜厚 (1-1 )、硏磨後膜厚（1-1 )、硏磨後膜厚（1-1 )、硏磨 墊使用時間、各產品·工程之參數） 另外，硏磨率RR可藉由下述式子來計算。 硏磨率RR(I-1) = (硏磨前膜厚（1-1)-硏磨後膜厚（I-1 ) )/硏磨後膜厚（1-1 ) 另外，在前述式子中，I係表示處理號碼之自然數。 硏磨時間 PT(I)係就每一硏磨頭所計算，被下載於 CMP裝置1 1。在計算之際，硏磨前膜厚（I )係使用硏磨 前的絕緣膜 CVD(Chemical Vapor Deposition:化學氣相 沈積)工程等之膜厚測量資料。即使在前工程之C VD工程 等中，雖期望以搭載在CVD裝置之膜厚測量裝置就每一 晶圓所測量的膜厚資料，但是，也可爲批次內之1片以上 的晶圓的測量値。 另外，還由CMP裝置1 1所傳送之膜厚資料，主電腦 1 9前饋式的決定產品晶圓3 1之下一工程（蝕刻、C V D 等）的處理條件。藉此，可省略作爲下一工程的前處理之 膜厚測量工程。 例如，在進行如第3 ( a )圖所示之元件分離之 STI(Shall〇w Trench Isolation:淺溝槽絕緣）工程中，於矽 基板40之上圖案形成氮化膜35，塡埋氧化膜36，進行 C Μ P硏磨後，進行氮化膜3 5之蝕刻的情形，在c Μ P裝置 1 1所測量之C Μ Ρ硏磨後的膜厚測量資料3 2可前饋式的 -18· (15) 1277149 使用在決定下一蝕刻工程之處理程式（處理條件（第3 (b )圖）。在此情形，在C Μ P工程和蝕刻工程之間’不 含被追加的膜厚測量工程故，自動化可容易實現。另外’ 測量全部晶圓故，比起每一片地決定處理條件’可做高精 度的控制。 另外，例如在與如第4(a)圖所示之M0S(Metal 0xide Semiconductor:金屬氧化半導體）形成後之弟1金屬配線 間的層間膜IL D (I n t e r 1 e b e 1 D i e 1 e t c r i c :層間介電質）的平 坦化工程中，在矽基板4 1之上形成氧化膜4 3、多晶石夕 4 2、源極·汲極4 6、氧化膜3 7，進行C Μ P硏磨後’藉由 CVD護罩以形成氧化膜45之情形，由CMP裝置1 1所傳 送之C Μ Ρ硏磨後的膜厚測量資料3 3係前饋式的被使用在 決定下一絕緣膜CVD護罩工程的處理條件上（第4(b) 圖）。在CMP工程和絕緣膜CVD護罩工程之間不含膜厚 測量工程故，自動化可容易實現。另外，測量全部晶圓 故，比起每一片地決定處理條件，可做高精度的控制。 另外，在例如如第5 ( a)圖所示之金屬配線形成後的金 屬層間膜IMD(Inter Metal Dielectric:層間金屬介電質） 的平坦化工程中，於形成矽基板上的氧化膜44、鎢49(插 塞）、阻障層48(Ti + TiN)、鋁50、阻障層47(Ti + TiN)、氧 化膜38，進行CMP硏磨後，藉由CVD護罩以形成氧化膜 3 9之情形，由CMP裝置所傳送之硏磨後的膜厚測量資料 34係前饋式的被使用在決定下一絕緣膜CVD護罩工程之 處理條件上（第5(b)圖）。在CMP工程和絕緣膜CVD護 -19- (16) 1277149 罩工程之間不含被追加的膜厚測量工程故，自動化可容易 實現。另外’測量全部晶圓故，比起每一片地決定處理條 件，可做高精度的控制。 以上所述之回饋及前饋之參數可在潔淨室外之終端 2 2、2 3做編輯、確認故，間接業務可有效率化，控制精 度得以格外提升。在潔淨室外的編輯、確認作業之終端 22、23係連接於與主電腦或CMP裝置相同或不同的基幹 網路。藉此，可分散網路的處理負荷，變成可做更高響應 性之處理。 接著，依據第6圖槪略說明包含前述之CMP處理的 半導體裝置之製造方法的一例。藉由該製造方法所製造的 半導體裝置，例如係在晶圓的主面上具有 η通道型 MISFET等之裝置。 在η通道型MIS FET完成後，例如藉由在晶圓上以 CVD法堆積氧化矽膜，形成層間絕緣膜（步驟S61 )。接 著’藉由基於CMP法之硏磨，令此層間絕緣膜平坦化 (步驟S 6 2 )。 接著，藉由將以微影法所被圖案化之光阻膜當成遮罩 之蝕刻，在晶圓主面之η型半導體領域上之層間絕緣膜設 置連接孔（步驟S 6 3 )。 接著，藉由濺鍍法，例如在晶圓上堆積氮化鈦等阻障 層導體膜，進而藉由CVD法，例如在阻障層導體膜上堆 積鎢等導電性膜（步驟S64 )。 接著，藉由例如CMP法以去除層間絕緣膜上之阻障 -20- (17) 1277149 層導體膜以及導電性膜，在連接孔內殘留阻障層導體膜 導電性膜，形成由阻障層導體膜及導電性膜所成之插 (步驟S 6 5 )。 接著，藉由在晶圓上依序由下層起堆積Ti(鈦）膜、 合金膜及氮化欽膜，形成導電性膜（步驟S 6 6 )。 接著，藉由以由微影法所圖案化之光阻膜爲遮罩， 刻導電性膜，形成由導電性膜所成之配線，製造半導體 置（步驟S 6 7 )。 以上，雖依據實施形態而具體說明由本發明人所完 之發明，但是，本發明並不限定於前述實施形態，在不 離其要至之範圍內，不用說可有種種變更可能性。 例如，在前述實施形態中，雖就適合於C Μ P裝置 情形做說明，但是，並不限定於此，也可使用於濺鍍 置、CVD裝置等其他的半導體製造裝置。例如，在濺 裝置中，爲了靶之表面狀態穩定化，分別區要起始虛擬 理，可適用前述實施形態之虛擬處理的方法。另外，在 要膜厚測量之CVD裝置中，於裝置內配備前述實施形 之膜厚測量部，藉由將測量資料前饋式的使用於下一工 之CMP工程等，也可使用此方法。 [發明效果] 如簡單說明由本申請案所揭示發明中之代表性者所 得之效果，則如下述： (1 )在維修等人工作業比率高的CMP工程中，藉 及 塞 Α1 倉虫 裝 成 脫 之 裝 鍍 處 需 態 程 獲 由 -21 - (18) 1277149 令CMP工程自動化，少人化合理化成爲可能。 (2 )藉由作業人員等待時間的最小化，可提升裝置 的稼動率至極限，處理能力提升、投資金額壓縮皆可能。 (3 )由潔淨室外可令處理程式之條件最佳化，間接 業務效率得以提升。 (4 )配線層間膜厚之精度提升，產品產品率得以提 升0The measurement data of the measuring device is together with the processing data such as the honing time by CMP __^ - -...~ one - π material called ~ Yang ' ', -· -.. . One, one 'one-···u- ·, a w.·. The device is transmitted to the main computer, so that according to the "children's messy information to change. Set c ... .................. __... The condition of the program of ..... is made possible by the film thickness measurement data being used for the processing conditions of the next project, and the measurement project of the next project is omitted. The semi-guided jtm霊 automatic operation system is a system that can change the parameters of the processing program of each product located in the host computer through the network by the terminal outside the clean room. Specifically, as follows: (1) A method of manufacturing a semiconductor device according to the present invention, characterized in that it has a step of processing conditions for transferring a product wafer by a host computer to a semiconductor manufacturing device, J □ according to J Shield. The processing conditions for the processing of the product wafer in the semiconductor manufacturing apparatus are automatically processed in the semiconductor manufacturing apparatus described above, and the processing conditions of the wafer of the product to be transferred are automatically processed. (2) The method of manufacturing a semiconductor device according to the above (1), further comprising: forming a film storm measuring device mounted on the semiconductor device in the middle or at the end of the process of the preceding device In the foregoing product, the first step of the film i: _ is performed, and the film thickness information of the film and the processing data of the semiconductor manufacturing device are transmitted to the host computer. The step -9-(6) 1277149 and the film thickness data and processing data transmitted according to the foregoing are determined by the host computer in the semiconductor manufacturing device, and the processing strip of the processed product wafer afterwards (3) The method of manufacturing a semiconductor device according to (1), further comprising: forming a film thickness measuring device mounted on the semiconductor manufacturing device in the middle or at the end of processing of the product wafer a step of film thickness of the film on the product wafer, and a step of transferring the measured film thickness data to the host computer, and determining, according to the film thickness information transmitted above, the underlying wafer of the product (4) The method of manufacturing a semiconductor device according to the above (2), further comprising: determining, in the host computer, processing conditions of a project under the product wafer in accordance with the film thickness information transmitted (5) The automatic operation method of the semiconductor manufacturing apparatus according to the present invention, characterized by the steps of: transferring the processing conditions of the product wafer from the host computer to the semiconductor manufacturing apparatus, and following the processing conditions determined in advance, In the foregoing semiconductor manufacturing apparatus, the step of automatically processing the dummy wafer, and following the processing of the transferred product wafer The step of processing the product wafer in the semiconductor manufacturing apparatus. (6) The automatic operation method of the semiconductor manufacturing apparatus according to (5), further comprising: mounting in the middle or at the end of processing of the product wafer a film thickness measuring device of the semiconductor manufacturing apparatus for measuring a film thickness of a film formed on the product wafer, and transmitting the measured film thickness data and processing data of the semiconductor manufacturing device to the host computer - 10-(7) 1277149 The steps of determining the processing conditions of the product wafer to be processed in the semiconductor manufacturing apparatus and the subsequent processing according to the film thickness data and the processing data transmitted by the host computer. (7) (5) The automatic operation method of the semiconductor manufacturing apparatus further includes: measuring a film thickness measurement device mounted on the semiconductor manufacturing device to measure the formation on the product wafer during or after the processing of the product wafer a step of film thickness of the film, and a step of transferring the film thickness data of the foregoing measurement to the host computer, and according to the foregoing The film thickness is sent to the aforementioned computer to determine the processing conditions of a project under the wafer of the aforementioned product. (8) The automatic operation method of the semiconductor manufacturing apparatus according to (6) above, further comprising the step of determining processing conditions of the next product of the product wafer in the host computer based on the film thickness information transmitted. (9) An automatic operation method of a CMP apparatus according to the present invention, comprising: a step of transferring a processing condition of a product wafer from a host computer to a C Μ P device, and following a predetermined processing condition, in said CMP The step of 'automatically processing the virtual wafers in the device, and the step of processing the product wafers in the CMP device according to the processing conditions of the product wafers transferred as described above. (1) The automatic operation method of the C Μ Ρ device of (9), further comprising: measuring the film thickness measurement device mounted on the CMP device during or after the processing of the product wafer a step of forming a film thickness on the product wafer, and a step of transferring the measured film thickness data and the processing data of the CMP device to the host computer, and according to -11 - 1277149 (8) The film thickness data and the processing data to be transferred are determined by the main computer to determine the honing time of the product wafer to be processed in the C MP device. (1) The automatic operation method of the CMP apparatus according to the above (9), further comprising: measuring a film thickness measurement device mounted on the C MP device in the middle or at the end of the processing of the product wafer to form the product a step of film thickness of the film on the wafer, and a step of transferring the film thickness data of the foregoing measurement to the host computer, and determining the underlying work of the product wafer on the host computer according to the film thickness data transmitted as described above The steps of the processing conditions. (12) The automatic operation method of the CMP apparatus according to (10) above, further comprising the step of determining a processing condition of a project under the product wafer in the host computer in accordance with the film thickness data transmitted. (1) An automatic operation system of a semiconductor manufacturing apparatus according to the present invention, comprising: a host computer that holds processing conditions of a product wafer; and a device control unit that controls the semiconductor manufacturing apparatus, wherein the device control unit is When the host computer transmits the processing conditions of the product wafer to the semiconductor manufacturing apparatus, the dummy wafer is automatically processed in the semiconductor manufacturing apparatus according to a predetermined processing condition (the film formation of the honing film is performed as a pre-processing) The virtual wafer) processes the product wafer in the semiconductor manufacturing apparatus in accordance with the processing conditions of the product wafer to be transferred. (14) The automatic operation system of the semiconductor manufacturing apparatus according to the above (13), wherein the device control unit is mounted on the semiconductor manufacturing device at the end of the processing of the product wafer -12-1277149 或) a film thickness measuring device for measuring a film thickness of a film formed on the product wafer, and transmitting the measured film thickness data and processing data of the semiconductor device to the host computer, wherein the host computer transmits the film thickness according to the film thickness The data and the processing data determine the processing conditions of the product wafer to be processed later in the semiconductor manufacturing apparatus. (1) The automatic operation system of the semiconductor manufacturing apparatus according to the above (13), wherein the device control unit is mounted on the film thickness measuring device of the semiconductor manufacturing device when the product wafer is processed or finished φ. The film thickness of the film formed on the product wafer is measured, and the measured film thickness data is transmitted to the host computer, and the host computer determines the underlying work of the product wafer according to the film thickness data transmitted. Processing conditions. (16) The automatic operation system of the semiconductor manufacturing apparatus of (13) to (15), wherein the main computer and the device control unit are connected by a network, and may be located at a terminal outside the clean room connected to the network. The processing conditions of the product wafer in the host computer are changed. Therefore, according to the manufacturing method of the semiconductor device described above, the automatic operation method of the semiconductor manufacturing apparatus, the automatic operation system, and the automatic operation method of the CMP apparatus, the worker The waiting time is reduced, the rationalization is reduced, the processing capacity is improved, the investment amount is compressed, the indirect business efficiency is improved, the precision of the film thickness between the wiring layers is improved, and the product rate of the product is also improved. [Embodiment] -13- 1277149 (10) In the following description of the embodiments, the same reference numerals are given to the same members, and the description thereof will not be repeated. The first figure shows an embodiment of the present invention. Description of the structure of the automatic operation system of the semiconductor manufacturing apparatus and the automatic operation method Fig. 2 is a flow chart showing the processing flow of the CMp device in the present embodiment, and Fig. 3(a) is a cross-sectional view showing the s TI structure in the present embodiment, and Fig. 3(b) is shown in the figure. Explanation of S TI Process Flow in the Embodiment FIG. 4( a ) is a cross-sectional view showing the ild structure in the present embodiment. FIG. 4( b ) shows the processing flow of the ILD in the present embodiment. Fig. 5(a) is a cross-sectional view showing the IMD structure in the present embodiment, and Fig. 5(b) is a flow chart showing the processing flow of the IMD in the present embodiment, and Fig. 6 is shown in the figure. In the embodiment, a flow chart of an example of a method of manufacturing a semiconductor device will be described. First, an example of a structure and an automatic operation method of an automatic operation system of a semiconductor manufacturing apparatus according to the present embodiment will be described with reference to Fig. 1. A semiconductor manufacturing apparatus of the present embodiment. For example, it is assumed that the CMP device 1 1 controls the C Μ P device 1 1 device control unit 1 2, and the virtual wafer 埠 1 3 and the product wafer 埠 14 are loaded and loaded. Wafer honing section 1 5, wafer processing The rinsing unit 1 is configured to measure the film thickness of the film formed on the wafer, and is disposed in the clean room. The C Ρ device 1 1 is used in the clean room network. 1 8 and connected to the main computer 19. The main computer 1 9 series management semiconductor manufacturing engineering 'preservation of product wafer-14- (11) 1277149 product wafer processing program 2 4, each product · engineering parameters 2 5 In the main computer 19, the honing time Ι(Ι) of the product wafer of the CMP device 1 can be calculated from the parameters of each product and engineering, etc. The calculated honing time Ι(Ι) is The processing program 24 of the product wafer is taken in. Further, by downloading the processing program 24 of the product wafer from the host computer 19 to the CMP device 1, the CMP device 1 1 can be automatically operated. The network 18 in the clean room is connected to the terminal 20, and the terminals 22, 23, etc. are connected to the network 2 1 in the clean room, and the network 18 in the clean room and the network 2 1 in the clean room are connected to each other. Further, the data stored in the host computer 19 or the CMP device 1 1 can be viewed or edited by the terminals 20, 22, 23 or the like. The CMP processing of the dummy wafer of the CMP apparatus 1 is as follows, as shown by the arrow in FIG. 1, first, the dummy wafer is transferred from the dummy wafer 玮1 to the honing unit 15 in the honing section. In 1 5, after the virtual wafer is honed, it is moved to the rinsing unit 16. In the rinsing unit 16, the dummy wafer is washed and stored in the virtual wafer 埠1 3 steps. . As a pre-processing, the virtual wafer used here is subjected to a film of a honed film to form a X-pass, thereby improving the function as a starting virtual wafer. For example, in the case of honing a metal film in a product wafer, the same metal film or oxide film (SiO 2 film, etc.) is applied as a pre-treatment, and in the case where the product is honed, the pre-treatment is the same. An oxide film (Si 02 film, etc.) is applied to the surface. Next, the CMP process of the product wafer has: transferring the product wafer to the honing part 15 by the product wafer ,1 4, honing the product wafer in the honing part 15 and transferring it to the 淸Washing unit 1 6 in the rinsing unit 16 -15- (12) 1277149 After the product wafer is rinsed, it is transferred to the film thickness measuring device 17 and is measured in the film thickness measuring device 17 After the film thickness of the film on the circle is stored, it is stored in each step of the product wafer. The measurement data of the film thickness and the processing data of the device are regarded as the end data 26, which is sent to the host computer 19 by the CMP device i1. Next, an example of a method of manufacturing a semiconductor device including the above-described CMP process and an automatic operation method of the semiconductor device in the present embodiment will be described with reference to Figs. 2 to 6 . The method for manufacturing a semiconductor device and the method for automatically operating the semiconductor device according to the present embodiment have the following steps in the CMP process. As shown in Fig. 2, the CMP apparatus 1 1 holds the processing program (processing condition) 27 of the virtual wafer in advance, and when the processing program 24 of the product wafer is downloaded from the CMP apparatus 1 1 by the host computer 19, The virtual wafer 28 is automatically processed by the determined processing conditions. The non-product wafer is subjected to CMP processing as the starting virtual wafer or the starting virtual wafer in the wafer processing unit 29 formed by the honing portion 15 and the rinsing portion 16. After the CMP process, the dummy wafer 28 is stored in the wafer storage portion 30. When the processing program 24 of the product wafer is downloaded from the host computer 19 to the CMP apparatus 1, the automation of the semiconductor manufacturing process is facilitated by automatically processing the dummy wafers 28. The virtual wafer 28 is occupied by one of the loading cassettes or is stored in a buffer tank for holding the dummy wafer 28 in the CMP apparatus 11. The device control unit 1 in the CMP device 1 1 processes the number of slices determined by the virtual wafer processing program 27, but performs the equal use of the stored virtual wafers 28 - 16 - (13) 1277149 The scaffolding management of the virtual wafer 28 is processed in sequence. Further, the device control unit 1 2 in the CMP apparatus 1 1 manages the number of uses of the virtual wafer 28 or the cumulative usage amount, and generates an alarm when a specific usage amount (time, number of times, etc.) is reached. When the virtual wafer exceeding the usage amount is stored in the carrier, the main computer is sent out and unloaded, and the virtual wafer exceeding the usage amount is automatically unloaded. After the processing of the virtual wafer 28, the product wafer 31 is subjected to CMP processing in the wafer processing unit 29 in accordance with the processing program 24 of the product wafer downloaded from the self-computer 19. The film thickness of the film formed on the product wafer 31 is measured at least once by the film thickness measuring device 17 mounted on the CMP apparatus 1 1 during or after the honing or rinsing of the product wafer 31 Thickness, film thickness measurement can also be done before honing, but the film thickness has been measured in the previous project, the honing rate can be calculated from the film thickness before honing and the thickness of the honing thickness. Film thickness measurement before honing is not particularly required. After that, after the CMP process of the product wafer 31 is completed, the processing time, the honing time, the honing pressure, the number of revolutions, the amount of the slurry, and the like, and the film thickness of the honing head and the honing pad are used by the CMP apparatus 1 1 . The end data 26 resulting from the measurement data is transmitted to the host computer 1 9 . Then, based on the film thickness measurement data and the processing data transmitted by the CMP device 11 and the parameters of the respective honing layers of the product wafer, the processing conditions such as the honing time of the subsequently processed product wafer are determined in the host computer 19. . As the above, the latest information on the processing conditions is updated by the instant, and instant feedback is possible. As a method of feeding back the latest information to the batch -17-(14) 1277149 to be processed, for example, the honing time pt(i) is determined by the following equation. Honing time PT(I)=f (film thickness before honing (I), film thickness before honing (1-1), film thickness after honing (1-1), film thickness after honing (1-1 ), the use time of the honing pad, the parameters of each product and engineering) In addition, the honing rate RR can be calculated by the following formula. Honing rate RR(I-1) = (film thickness before honing (1-1) - film thickness after honing (I-1)) / film thickness after honing (1-1) In addition, in the above formula Medium, I is the natural number of the processing number. The honing time PT(I) is calculated for each honing head and downloaded to the CMP apparatus 11. In the calculation, the film thickness before honing (I) is a film thickness measurement data such as a CVD (Chemical Vapor Deposition) project before honing. Even in the C VD project of the former engineering, it is desirable to use the film thickness measurement device mounted on the CVD device for the film thickness measurement of each wafer, but it may be one or more wafers in the batch. The measurement 値. In addition, the film thickness data transmitted by the CMP device 1 is used to determine the processing conditions of the underlying process (etching, C V D, etc.) of the product wafer 31 under the feedforward type of the main computer. Thereby, the film thickness measurement project as the pre-processing of the next project can be omitted. For example, in an STI (Shall〇w Trench Isolation) project in which element isolation as shown in FIG. 3(a) is performed, a nitride film 35 is patterned on the germanium substrate 40, and a buried oxide film is formed. 36. After performing C Μ P honing, the etching of the nitride film 35 is performed, and the film thickness measurement data of the C Μ honing measured by the c Μ P device 1 1 can be feedforward- 18· (15) 1277149 Used in the processing of the next etching process (processing conditions (Fig. 3 (b)). In this case, there is no additional film thickness between the C Μ P engineering and the etching process. For measurement engineering, automation can be easily realized. In addition, 'measure all wafers, and determine processing conditions per piece' can be controlled with high precision. In addition, for example, with MOS as shown in Figure 4(a) ( In the planarization process of the interlayer film IL D (I nter 1 ebe 1 D ie 1 etcric) of the metal wiring layer after the metal 0xide semiconductor is formed, the metal oxide semiconductor is formed on the germanium substrate 4 1 Forming an oxide film 43, a polycrystalline stone 4, a source/drain 4, and an oxide film 3 After C Μ P honing 'in the case of forming the oxide film 45 by the CVD mask, the C Μ honing film thickness measurement data transmitted by the CMP device 1 3 is used in the feedforward type. The processing conditions of the next insulating film CVD shield project (Fig. 4(b)). There is no film thickness measurement between the CMP project and the insulating film CVD shield project, so automation can be easily realized. For the wafer, the high-precision control can be performed to determine the processing conditions for each piece. In addition, for example, the metal interlayer film IMD (Inter Metal Dielectric) after the metal wiring is formed as shown in Fig. 5 (a) In the planarization process of dielectric), an oxide film 44 on a germanium substrate, tungsten 49 (plug), barrier layer 48 (Ti + TiN), aluminum 50, barrier layer 47 (Ti + TiN), The oxide film 38 is subjected to CMP honing, and a CVD mask is used to form the oxide film 39. The honed film thickness measurement data 34 transmitted by the CMP device is used in the feedforward type. Insulation film CVD shield engineering processing conditions (Fig. 5(b)). CMP engineering and insulating film CVD protection -19- (16) 12771 49 There is no additional film thickness measurement between the cover projects, so automation can be easily realized. In addition, 'all wafers are measured, and high-precision control can be performed to determine the processing conditions for each piece. The parameters of the feedforward can be edited and confirmed in the terminals 2 2 and 2 3 of the clean room. The indirect business can be efficient and the control precision can be improved. The terminals 22 and 23 for editing and confirming operations outside the clean room are connected to the same or different backbone network as the host computer or CMP device. As a result, the processing load of the network can be dispersed, and processing becomes more responsive. Next, an example of a method of manufacturing a semiconductor device including the above-described CMP process will be briefly described based on Fig. 6 . The semiconductor device manufactured by the above-described manufacturing method is, for example, an apparatus having an n-channel type MISFET or the like on the main surface of the wafer. After completion of the n-channel type MIS FET, an interlayer insulating film is formed by, for example, depositing a hafnium oxide film on a wafer by a CVD method (step S61). Then, the interlayer insulating film is planarized by honing based on the CMP method (step S 6 2 ). Then, by etching the photoresist film patterned by the lithography method as a mask, a connection hole is provided in the interlayer insulating film on the n-type semiconductor region of the main surface of the wafer (step S63). Then, a barrier film conductor film such as titanium nitride is deposited on the wafer by a sputtering method, and a conductive film such as tungsten is deposited on the barrier layer conductor film by a CVD method (step S64). Then, for example, a CMP method is used to remove the barrier -20-(17) 1277149 layer conductor film and the conductive film on the interlayer insulating film, and the barrier layer conductor film conductive film remains in the connection hole to form a barrier layer. The conductor film and the conductive film are interposed (step S65). Next, a Ti (titanium) film, an alloy film, and a nitride film are sequentially deposited on the wafer from the lower layer to form a conductive film (step S66). Next, a conductive film is formed by using a photoresist film patterned by a lithography method to form a conductive film, thereby forming a semiconductor-made wiring (step S67). Although the invention made by the inventors of the present invention has been specifically described above based on the embodiments, the present invention is not limited to the above-described embodiments, and it is needless to say that various modifications are possible without departing from the scope of the invention. For example, in the above embodiment, the case where the C Μ P device is suitable is described. However, the present invention is not limited thereto, and may be used in other semiconductor manufacturing apparatuses such as a sputtering apparatus and a CVD apparatus. For example, in the sputtering apparatus, in order to stabilize the surface state of the target, the virtual area is started in each of the regions, and the method of virtual processing in the above embodiment can be applied. Further, in the CVD apparatus for film thickness measurement, the film thickness measuring section of the above-described embodiment is provided in the apparatus, and this method can also be used by using the measurement data feedforward type for the next work of CMP engineering or the like. [Effects of the Invention] The effects obtained by the representative of the invention disclosed in the present application will be briefly described as follows: (1) In a CMP project having a high labor ratio such as maintenance, the scorpion 1 is loaded with a worm. The required state of the plating is obtained by the 21 - (18) 1277149 to automate the CMP project, making it possible to rationalize the number of people. (2) By minimizing the waiting time of the operator, the utilization rate of the device can be increased to the limit, and the processing capacity can be improved and the investment amount can be compressed. (3) The conditions of the processing program can be optimized by the clean room, and the indirect business efficiency can be improved. (4) The accuracy of the film thickness between the wiring layers is improved, and the product product rate is increased by 0.
【圖式簡單說明】 第1圖係顯示在本發明之一實施形態中，半導體製造 裝置的自動運轉系統的構造及自動運轉方法之說明圖。 第2圖係顯示在本實施形態中，CMP裝置的處理流 程說明圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing a structure and an automatic operation method of an automatic operation system of a semiconductor manufacturing apparatus according to an embodiment of the present invention. Fig. 2 is a view showing the processing flow of the CMP apparatus in the present embodiment.
第3 ( a )圖係顯示在本實施形態中的 STI構造之剖 面圖，第3 ( b )圖係顯示在本實施形態中的STI處理流 程說明圖。 第4 ( a )圖係顯示在本實施形態中的ILD構造之剖 面圖’第4 ( b )圖係顯示在本實施形態中的ILD的處理 流程說明圖。 第5 ( a )圖係顯示在本實施形態中的IMD構造之剖 面圖’第5 ( b )圖係顯示在本實施形態中的imd的處理 流程說明圖。 第6圖係顯示在本實施形態中，半導體裝置之製造方 法的一例之流程圖。 -22- (19) (19)1277149 主要元件對照表 1 1 : CMP裝置 1 2 :裝置控制部 13:虛擬晶圓用ί阜 1 4 :產品晶圓用璋 1 5 :硏磨部 1 6 :淸洗部 0 1 7 :膜厚測量裝置 1 8 :潔淨室內之網路 1 9 :主電腦 20、 22、 23:終端 ， 2 1 :潔淨室外之網路 _ 24:產品晶圓之處理程式 2 5 :各產品·工程之參數 2 6 :結束資料 φ 2 7 :虛擬晶圓之處理程式 2 8 :虛擬晶圓 2 9 :晶圓處理部 3 0 :晶圓儲存部 3 1 :產品晶圓 3 2、3 3、3 4 :膜厚測量資料 35 :氮化膜（SiN ) 36、37、38、39、43、44、45:氧化膜（Si02) -23- (20) (20)1277149 4 0、4 1 :矽基板 42 :多晶矽 46 :源極·汲極 47、48 :阻障層（Ti+TiN ) 49 :鎢（W ) ，50 :鋁（A1 )Fig. 3(a) is a cross-sectional view showing the STI structure in the present embodiment, and Fig. 3(b) is a view showing the STI processing flow in the present embodiment. Fig. 4(a) is a cross-sectional view showing the ILD structure in the present embodiment. Fig. 4(b) is a flow chart showing the processing of the ILD in the present embodiment. Fig. 5(a) is a cross-sectional view showing the IMD structure in the present embodiment. Fig. 5(b) is a flow chart showing the processing of imd in the present embodiment. Fig. 6 is a flow chart showing an example of a method of manufacturing a semiconductor device in the present embodiment. -22- (19) (19) 1277149 Main component comparison table 1 1 : CMP device 1 2 : Device control unit 13 : For virtual wafers 4 1 4 : Product wafer 璋 1 5 : Honing unit 1 6 : Washing unit 0 1 7 : Film thickness measuring device 1 8 : Network in clean room 1 9 : Main computer 20, 22, 23: Terminal, 2 1 : Clean outdoor network _ 24: Product wafer processing program 2 5: Parameters of each product and engineering 2 6 : End data φ 2 7 : Virtual wafer processing program 2 8 : Virtual wafer 2 9 : Wafer processing unit 3 0 : Wafer storage unit 3 1 : Product wafer 3 2, 3 3, 3 4: Film thickness measurement data 35: nitride film (SiN) 36, 37, 38, 39, 43, 44, 45: oxide film (Si02) -23- (20) (20) 1277149 4 0, 4 1 : 矽 substrate 42 : polysilicon 46 : source · drain 47, 48 : barrier layer (Ti + TiN ) 49 : tungsten (W ) , 50 : aluminum (A1 )
-24--twenty four-