I 1274791 九、發明說明： 【發明所屬之技術領域】 本發明係關於—種電漿處理裝置’尤指一種在一處於真 空之腔室中產生電襞且用該電漿處理半導體基板、LCD基板 及類似物之電漿處理裝置。 【先前技術】 、乂般而言…裝置用於製造半導體器件、液晶顯示器及 類似物之中，才木用電漿處理裝置來利用電裝處理一基板之 表面舉例而5，該電裝處理裝置包括一電裝钱刻裝置用 於蝕刻該基板、—用# A i 1, 反肖於在该基板上進行一化學汽相澱 理之電浆化學汽相殿積（CVD)裝置以及類似物。、 10及回20 /此％黎處理裝置1包括兩個平面電極 及20’ δ亥等平面電極在 广壯献^ ㈣心置之上部及下部部分彼此平 丁衣配。一基板s被安梦在_+ 衣在5亥專兩個電極中該下部電極20 於疋，訂部電極20亦稱作一基板安襄板。 如圖1所不，該電漿處 將一其#1、、， ^ 衣置1具有一内部頂升銷30以 邱§ : A錢理裝置中或運送出該處理裝置。兮内 福鎖3。穿過經由該下部 = i且在其穿過料通孔之以形成之通孔 此外，該電浆處理芒置^右守被向上及向下驅動。 中之氣體排出至外部…；：屮―空氣排出單元40以將其 /兮+將老 μ工乳排出單元40係連接至一安梦 在遠電漿處理裝置丨外部之 逆接主文衣 電漿處理裝置丨中衰’芬/ 7未顯示），以吸取及移除該 τ氣體及保持兮命 空狀態。 寻4电漿處理裝置1處於一真 1274791 該上部電極10相對定位於該下部電極20。該上部電極 1 0用作％體供應單元以供應—處理氣體至該等電極之 之空間及用作-電極。於是’如圖1所示，該上部電極二 具有一氣體分配板12以及—噴頭14;該喷頭14形成 個氣體擴散孔，每一 & $ t ^ ^ 一 甘孔具有一精細之直徑。從而，該處理 乳體經由該喷頭14均勻地供應至該等電極10與20之間之 空間。供應至該等電極之間空間之處理氣體藉由對該_ 極應用射頻能量而變成電漿，且藉由該電襞來處理該基： 之表面。 分配板12具有—板形狀，且係連接至—被 ;電裝處理裝置1外部之氣體源（未顯示)，以主要地分配 外部供應之處理氣體。於是，如圖2料，—用 :先確疋之方向上供給處理氣體之通$ i2a形成於將 ^里裝置u。該通道12a具有—自該氣體分配板^水 =壓進-縣確定深度之槽形狀。該等通孔m在該通 3V'末端處形成以穿過該氣體分配板12。此時，如圖 d所不’母一該等通孔i /、有一朝向該氣體分配板丨2 一底側逐漸增加之直徑。彳 ^ 攸而，该等通孔12b之每_ 具有一等腰的梯形形狀截面。 二而，傳統之電漿處理裝置之_在於提供至該上部電 舌、# 聪上具有该板形狀，從而其太、、少I 1274791 IX. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus, and more particularly to an apparatus for generating electricity in a chamber in a vacuum and processing the semiconductor substrate and the LCD substrate with the plasma. And similar plasma processing equipment. [Prior Art] In general, a device is used for manufacturing a semiconductor device, a liquid crystal display, and the like, and a plasma processing device is used to process a surface of a substrate by using an electric device. 5 An electric charging device is included for etching the substrate, using #A i 1, and a plasma chemical vapor deposition (CVD) device and the like for performing a chemical vapor deposition on the substrate. 10, and 20/%% of the processing device 1 includes two planar electrodes and a planar electrode such as 20' δ hai, which is arranged in the upper part and the lower part of the center. A substrate s is immersed in the _+ clothing in the two electrodes, and the lower electrode 20 is in the 疋, and the part electrode 20 is also referred to as a substrate ampule. As shown in Fig. 1, the plasma is provided with a #1, #, ^ clothing 1 having an internal jacking pin 30 for transporting the processing device.兮内福锁3. Passing through the through hole formed through the lower portion = i and passing through the material through hole. In addition, the plasma processing device is driven upward and downward. The gas in the middle is discharged to the outside...;: 空气- the air discharge unit 40 is connected to the old 工 工 排出 排出 40 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在The device 衰 ' 芬 / 7 is not shown) to absorb and remove the τ gas and maintain the simmer state. The 4th plasma processing apparatus 1 is in a true 1274791. The upper electrode 10 is relatively positioned on the lower electrode 20. The upper electrode 10 serves as a % body supply unit to supply a process gas to the space of the electrodes and as a -electrode. Thus, as shown in Fig. 1, the upper electrode 2 has a gas distribution plate 12 and a showerhead 14; the showerhead 14 forms a gas diffusion hole, and each & $t^^-glyph has a fine diameter. Thereby, the treated milk is uniformly supplied to the space between the electrodes 10 and 20 via the head 14. The process gas supplied to the space between the electrodes is converted into a plasma by applying RF energy to the electrode, and the surface of the substrate is treated by the electrode. The distribution plate 12 has a plate shape and is connected to a gas source (not shown) external to the electrical processing device 1 to mainly distribute the externally supplied process gas. Therefore, as shown in Fig. 2, the use of: the supply of the process gas in the direction of the first correction is formed by the device i. The passage 12a has a groove shape from the gas distribution plate, water, pressure, and county. The through holes m are formed at the end of the through 3V' to pass through the gas distribution plate 12. At this time, as shown in Fig. d, the through hole i / has a diameter which gradually increases toward the bottom side of the gas distribution plate 丨 2 .彳 ^ 攸, each of the through holes 12b has an isosceles trapezoidal shaped cross section. Second, the conventional plasma processing apparatus is provided to the upper electric tongue, and the #聪 has the shape of the board, so that it is too small
，V致該上部電極10之操作 /L 理裝置處理之基板尺寸增加時，當由該電榮處 9加吟，该電漿處理裝置亦按比例 曰加。結果，該氣體分 板12亦按比例增加，使上述之問 1274791 題更加嚴重。 it匕外’其問題在背S，备今七知 、田氣體分配板12完全形成爲具有 4板H則材料成本顯著增加，且維護該裝置將非常困 難，例如，爲維護該裝置則依、 則々分開整個氣體分配板。另外， 由於該氣體分配板按比例增加，在供應該處理氣體時會發 生該處理氣體之洩漏。 【發明内容】 提供本發明來解決上述 同碭，且本發明之目的係提供 包括一氣體分配板之電漿處 里衣置，其中該氣體分配板易 於製造、在供應處理氣體過 布r防止處理氣體之洩漏、以 及允許簡單之維護。 發明’上述及其他目的可藉由提供—電漿處理裝 電漿處理褒置用來在真空狀態下產生„及 對於-物體使用該電漿進行—預切定之處理，該電喂产 理二置包括-氣體供應器件，其中該氣體供括-複數個氣體輸送管，該等氣體輪送管在上部電極下:^_ 於一上部電極之-下部表面裝配，且在其卜仃 至一氣體供應通道以便在一水平 邛被連接 ^ 干方向上自該電滎# w壯职 外部輸送一處理氣體；複數個擴衣置 个夂双佃擴放兀件，其向 等氣體輸送管之另一側端部或中間部分以向至該 經由該等氣體輸送管供應之處理氣體；以及及育射 W擴散元件下面且具有複數個氣體擴散孔以將該：位 軋體均勻地排放進入該電漿處理裝置。 、q处理 1274791 忒等设數個氣體輸送管可徑向 周圍，以允—…1 罝在“體供應通道之 5午在水平方向上均句分配該處理氣體。 %極可在下部表面處形成有 舻於祥总 令干槽以接納該等氣 體輸达官，且該等氣體輸送管可被插 孔 匕邱雷^ & 寺才日中以減小該 上4電極之總厚度。藉由減小該上 一優點A — 电極之厚度可獲得之 1炎；爲—腔至之内 放時間。 处而減少吸取時間及排 該等氣體輸送管可被整體形成至該等擴散元件， ‘造該電漿處理裝置之製程，且去 γ 9 兮笙樜私-丄 、了 口亥寺氣體輸送管盥 生洩漏。 輪込该處理氣體時發 每-該等氣體輸送管可朝向該電漿處理裝置外部向下傾 斜，以使得輸送該處理氣體時氣流平穩。 、 每-該等氣體輸送管可具有兩個或多個轉接 元件，以便在整個電極上更均勾分配該處理氣體 該氣體供應n件可進―步包括—位於該氣體供 端之氣體輸送管緊固件，以將該等氣_以之:_ 搞接至該氣體供應通道之-端部，以便將自該電装處；; 置外部供應之處理乳體供應至該等氣體輸送管 將該氣體供應通道簡單組F i I^ ^ &向允許 且衣至該寺軋體輪送管以 造該等氣體輸送管。 間早衣 【實施方式】 將參考所附圖式來詳Λ祕p卡、 例。 ^地^本發明之較佳具體實施 9 1274791 如圖4所不，一根據本發明之電漿處理裝置丨〇〇通常具 有類似於傳統之電漿處理裝置丨之一結構及若干功能。然 而，本發明之電漿處理裝置100之一氣體供應器件具有與 »亥傳統之電漿處理裝置i之該組件不同之結構。從而，本 發明之該電聚處理裝置將特別地就該氣體供應器件進行描 述，且在此本文將省略其他部件之重複描述。 玉根據本具體實施例之氣體供應器件，包括複數個水平擴 政早兀11 2以及一喷頭i丨4。該等水平擴散單元丨丨2係連接 至-氣體供應通道116且藉由主要地在一水平方向上擴散 1理乳體用來將自外部供應之處理氣體分配至該電裝處 理裝置中各個位置’其中該氣體供應通道116係連接至該 電漿處理裝置之外部。 根據本具體實施例’該等水平擴散單元"2之每一單元 包括右干氣體輸送管112a以及若干擴散元件⑽。如圖5 中所不’該等氣體輸送| 112a係連接至該氣體供應通道 端#且该氣體供應通道116在另一端部係連接至 —夕部氣體源’該等氣體輸送管112a提供一用於水 =氣_。此時，該氣體供應通物具= :^ =、ί_)以控制—自該氣體源供應之氣體。每一 輸送U2a具有—管开彡結構，其可允許無线漏地 山”理氣體。從而，每一該等氣體輸送 ^部處係連接至該氣體供應通道n 二在：- 連接至—相關之擴散元件⑽。知部處係 儘管該等氣體輸送管112a可與地面水平，但是其亦可向 10 1274791 下傾斜，如圖4所示，以使得該處理氣體平穩流動。 較佳地’根據本具體實施例’該氣體供應器件進—步包 括-I禺接至該氣體供應通道116之—端部之氣體輸送管緊 固件118,如圖5所示。該氣體輸送管緊固件118具有―圓 柱形狀’且被輕接至該氣體供應通道116之-下端部。該 氣體輸送管緊固件118將該等氣體輸送f u㈣接至^ 體供應通道U6。同樣地，其用來將複數個氣體輸送管^ 至該氣體供應通道。從而’當使用該氣體輪送管緊固件時， 其具有-易於製造及安裝該等氣體輸送管之優點。 ▲該等擴散元件⑽爲向下擴散該處理氣體之部件，其中 該處理氣體經由該等氣體輸送管U2a在水平方向上被輸 达。根據本具體實施例，每一該等擴散元件Η此具有一圓 錐形狀，其直徑向下逐漸增加。從而藉由料擴散元^ 112b向下擴政该處理氣體時係徑向擴展。 根據本具體實施例，該等複數個氣體輸送管U2a較佳地 以一徑向結構耦接至該氣體供應通道i丨6 (如圖5所示）， 以將該處理氣體擴散至該電漿處理裝置中各個位置。由於 本具體實施例之該等氣體輸送管U2a具有—簡單之結構， 所以其可易於製造及改變結構。從而，如果在用該電槳處 理基板後確定未均勾地進行該氣體供應，則可調節該等氣 體輸送管U2a之長度、位置或其數量以構造新的水‘擴： 單元。 在該傳統之電漿處理裝置中，如圖丨所示，該厚的氣體 分配板位於該上部電極之下來分配該處理氣體。相反，根 1274791 據本發明，代替該氣體 L槪 邊虱體供應器件1有 個配備在該上部電極 ’、 抛政早兀，以便減小該上部電 該上部帝朽+史 、> 忒上邛電極。特別地，當 體輸逆& 11 9 /成有若干槽以接納該等氣 濃輸运官112a，且接著該等翁妒 一 π.日丨 寺孔體輪迗管U2a被插至該等枰 、Λ、 邛兒極之整個厚度。此時，亦必項 减小该氣體供應通道工丨6 ’、 我没且由於該氣體輸送管緊 口件118必須被插至該 Μ 邛私極之一下部分，所以 電極之下部分必須 丄口丨 118。 形成有一槽以接納該氣體輸送管緊固件 仏管该等擴散元件、^ ^ 輸送管U2a 12b被^“各自純至該等氣體 a之末鳊，但是該等擴散元件 ，體輪” 112a之中間部分。此外，一 112a可包括兩或多個 ”體輪迗吕 氣體輸送管112m ，散元件112b。在該單一 之情況下，兮匕兩或多個耗接至其之擴散元件⑽ 中將_ 軋體可經由該等水平擴散單元擴散至哕 穿置十叮由 更夕位置，從而該處理氣體在該電漿處理 衣置中可更均勻地分配。 处里 根據本發明，呤癸产 -單—元件或可；=體輸送管及該等擴散元件可形成爲 此耦接。 /成爲分開之凡件，該等分開之元件可彼 該噴頭11 4且古_』 112下方形成有複^構，其中在該等水平擴散單元 散單元112^有设數個氣體擴散孔’其用來將自該等水平擴 …之處理氣體均勻地擴散進該電漿處理裝置 12 1274791 中。 根據本發明之該電漿處理之 供靡哭杜6 4 炎”、、έ舄·由於該氣體 ί、應叩件包括該等簡單之水平擴散單元 ϋ ^ ik m ^ ^ 來在水平方向上擴 體，所以該氣體供應器件可減少製造成本及重 二"：：安裝及操作。此外，該氣體供應器件可易於 斥3或連接用於維護該電漿處理裝置。 根據本發明之該電聚處理裝置之另—優點爲：由 平擴散單元112 氣 、〜欠 〈孔版輸运官具有完整之管形When V is used to increase the size of the substrate processed by the operation/L device of the upper electrode 10, the plasma processing device is also scaled up when it is twisted by the electric device. As a result, the gas dividing plate 12 is also proportionally increased, making the above-mentioned problem 1274791 more serious. It's a problem with the back S, the current gas distribution board 12 is completely formed with 4 plates H, the material cost is significantly increased, and it is very difficult to maintain the device, for example, to maintain the device Then 々 separate the entire gas distribution plate. In addition, since the gas distribution plate is proportionally increased, leakage of the process gas occurs when the process gas is supplied. SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a plasma-in-suit garment comprising a gas distribution plate, wherein the gas distribution plate is easy to manufacture, and the processing gas is supplied to prevent the treatment. Gas leakage and easy maintenance. The above and other objects of the invention can be achieved by providing a plasma treatment plasma treatment device for generating a vacuum state and for pre-cutting the plasma for the object. Including a gas supply device, wherein the gas is provided with a plurality of gas delivery tubes under the upper electrode: ^_ is assembled on a lower surface of an upper electrode, and is supplied to the gas supply The passage is for conveying a process gas from the outside of the electric raft to the outside of the electric raft, and the plurality of splicing and splicing elements are disposed on the other side of the equal gas delivery pipe. The end portion or the intermediate portion is disposed to the processing gas supplied through the gas delivery tubes; and the blasting W diffusion member has a plurality of gas diffusion holes to uniformly discharge the:-position rolling body into the plasma processing Device, q processing 1274791 忒, etc. Several gas delivery pipes can be radially around to allow the ... -1 罝 to distribute the process gas in the horizontal direction at 5 noon of the body supply channel. % can be formed at the lower surface to form a dry trough to accommodate the gas delivery officers, and the gas delivery pipes can be removed by the jack 匕Qiu Lei ^ & Temple to reduce the upper 4 The total thickness of the electrodes. By reducing the thickness of the last advantage A - the thickness of the electrode can be obtained; At the same time, the suction time is reduced and the gas delivery pipes can be integrally formed to the diffusion elements, 'the process of making the plasma processing device, and the γ 9 兮笙樜 丄 丄 了 了 了 口 口 气体 气体 气体 气体 气体A leak occurred. When the process gas is rim, each of the gas delivery pipes may be inclined downward toward the outside of the plasma processing apparatus to make the gas flow smooth when the process gas is delivered. Each of the gas delivery tubes may have two or more switching elements to more evenly distribute the processing gas over the entire electrode. The gas supply n may further include - gas delivery at the gas supply end a pipe fastener to connect the gas to the end of the gas supply passage so as to supply the externally supplied treated milk to the gas delivery pipe A simple set of gas supply channels F i I ^ ^ & to allow the clothes to the temple rolling wheel to make the gas delivery pipes. Early morning clothes [Embodiment] The details of the p-cards will be described with reference to the drawings. DETAILED DESCRIPTION OF THE INVENTION 9 1274791 A plasma processing apparatus according to the present invention generally has a structure similar to that of a conventional plasma processing apparatus and several functions. However, one of the gas supply devices of the plasma processing apparatus 100 of the present invention has a structure different from that of the conventional plasma processing apparatus i. Thus, the electropolymerization apparatus of the present invention will be specifically described with respect to the gas supply device, and repeated description of other components will be omitted herein. The gas supply device according to this embodiment includes a plurality of horizontal expansion ports 11 and a nozzle i丨4. The horizontal diffusion unit 丨丨2 is connected to the gas supply passage 116 and is configured to distribute the processing gas supplied from the outside to each position in the electrical processing device by mainly diffusing the first emulsion in a horizontal direction. 'The gas supply passage 116 is connected to the outside of the plasma processing apparatus. Each unit of the horizontal diffusion unit "2 according to this embodiment includes a right dry gas delivery tube 112a and a plurality of diffusion elements (10). As shown in FIG. 5, the gas delivery | 112a is connected to the gas supply channel end # and the gas supply channel 116 is connected to the other end of the gas supply channel 116. The gas delivery tubes 112a provide a use. In water = gas _. At this time, the gas supply means = :^ =, ί_) to control the gas supplied from the gas source. Each of the transport U2a has a tube opening structure that allows the wireless leakage of the gas to the ground. Thus, each of the gas delivery portions is connected to the gas supply channel n at: - connected to - related The diffusion element (10). Although the gas delivery tube 112a can be level with the ground, it can also be tilted downwards to 10 1274791, as shown in Figure 4, so that the process gas flows smoothly. Preferably In the present embodiment, the gas supply device further includes a gas delivery tube fastener 118 that is coupled to the end of the gas supply passage 116, as shown in Figure 5. The gas delivery tube fastener 118 has " The cylindrical shape 'is lightly connected to the lower end of the gas supply passage 116. The gas delivery tube fastener 118 connects the gas delivery uf(iv) to the body supply passage U6. Similarly, it is used to feed a plurality of gases The delivery tube is connected to the gas supply passage. Thus, when the gas delivery tube fastener is used, it has the advantage of being easy to manufacture and install the gas delivery tubes. ▲ The diffusion elements (10) diffuse the processing gas downward. Parts Wherein the process gas is delivered in the horizontal direction via the gas delivery tubes U2a. According to the embodiment, each of the diffusion elements has a conical shape, the diameter of which gradually increases downward, thereby diffusing by the material. The plurality of gas delivery tubes U2a are preferably coupled to the gas supply channel i丨6 in a radial configuration according to the embodiment. Figure 5) is used to diffuse the process gas to various locations in the plasma processing apparatus. Since the gas delivery tubes U2a of the present embodiment have a simple structure, they can be easily fabricated and changed in structure. If it is determined that the gas supply is not uniformly performed after the substrate is processed by the electric paddle, the length, position or the number of the gas delivery pipes U2a may be adjusted to construct a new water expansion unit. In the plasma processing apparatus, as shown in FIG. ,, the thick gas distribution plate is located below the upper electrode to distribute the processing gas. In contrast, the root 1247791 is replaced by the gas L according to the present invention. The carcass supply device 1 has an electrode disposed on the upper electrode, to reduce the upper portion of the upper electrode, and the upper electrode. In particular, when the body is reversed & / There are a number of slots to receive the gas-enriched transport officers 112a, and then the Weng-Zi-Yi-Yu-Shu rim tube U2a is inserted into the entire thickness of the 枰, Λ, 邛. At this time, it is also necessary to reduce the gas supply passage process 6', I have not and since the gas delivery pipe tight member 118 has to be inserted into one of the lower part of the 邛 邛 private pole, the lower part of the electrode must be 丄 丨118. Forming a groove to receive the gas delivery tube fastener, the diffusion element, and the delivery tube U2a 12b are "purified to the end of the gas a, but the diffusion element, the body wheel" 112a The middle part. In addition, a 112a may include two or more "body wheel 迗L gas delivery tubes 112m, dispersing elements 112b. In this single case, two or more of the diffusion elements (10) that are owed to them will be _ rolled bodies It can be diffused through the horizontal diffusion unit to the 哕 置 叮 叮 叮 , , , , , , , , , , , , , 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该Or the body duct and the diffusing elements may be formed to be coupled thereto. / As a separate piece, the separate elements may be formed under the nozzle 11 and the lower portion 112, wherein In the horizontal diffusion unit, the plurality of gas diffusion holes 112 are provided for uniformly diffusing the processing gas from the horizontal diffusion into the plasma processing apparatus 12 1274791. The electricity according to the present invention The supply of pulp treatment is 靡 杜 6 6 6 6 6 6 6 6 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于Devices can reduce manufacturing costs and weight two ":: Installation and operation. In addition, the gas supply device can be easily repelled or connected for maintenance of the plasma processing apparatus. Another advantage of the electropolymerization apparatus according to the present invention is that the flat diffusion unit 112 gas, ~ owed to the stencil transporter has a complete tubular shape
輸送該處理氧辦日本叮h 仗而S 孔體日守可完全防止處理氣體之沒漏。 ^據本發日月之該„處理裝置之又—優點爲：由於令等 軋體輸廷管及該等擴散元 、 豆结構m且 千，、有間早之結構’且易於改變 “而可易於對其調整以達到期望之結果。 應瞭解爲說明性目的描述 式，且太心“ 凡“1 4具體貫施例及所附圖 且本兔明由下麵的申請專利範圍 :此項軸將瞭解，在不偏離所附之申請專利範；中:; 之本务明之乾圍及精神之情況下，允許進行 增加及替代。 口種更改 【圖式簡單說明】 從上面結合所附圖式 發明之上述及其他目晰地瞭解本 、 的及4寸被，在該等圖式中： 圖1爲圖解—偉姑夕+淑：+ 得、、先之电漿處理裝置的構造 圖2爲圖解該傳移之+將* X向視圖， 圖； 傳統之电漿處理裝置的構造之上部透視 13 1274791 圖3爲圖解該傳統之電漿處理裝置的構造之下部透視 圖； 圖4爲圖解根據本發明一具體實施例之一電漿處理裝置 的構造之截面視圖，以及 圖5爲圖解根據本發明一具體實施例之該電漿處理裝置 一水平擴散單元的構造之透視圖。 【主要元件符號說明】The treatment of oxygen is carried out in Japan, and the S-hole body can completely prevent the leakage of the processing gas. According to the date of the present month, the advantages of the treatment device are: due to the fact that the rolling tube and the diffusing element, the bean structure are m and thousands, and the structure is early and easy to change. It is easy to adjust to achieve the desired result. It should be understood that the description is for illustrative purposes, and is too """""""""""""""""""""""""""" Fan; Zhong:; In the case of the basics of the Ming and the spirit, the increase and substitution are allowed. Mouth change [Simplified description of the drawings] From the above, the above and other contents of the invention of the present invention are clearly understood in the drawings: Figure 1 is an illustration - Wei Gu Xi + Shu : + The structure of the plasma processing device is shown in Fig. 2 is a diagram showing the transfer of the + X direction, Fig.; The structure of the conventional plasma processing device is a perspective 13 1274791. Fig. 3 is a diagram illustrating the conventional FIG. 4 is a cross-sectional view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention, and FIG. 5 is a view illustrating the plasma according to an embodiment of the present invention. A perspective view of the construction of a horizontal diffusion unit of the processing device. [Main component symbol description]
1 電漿處理裝置 10 上部電極 12 氣體分配板 12a 通道 12b 通孔 14 喷頭 20 下部電極 22 通孔 30 内部頂升銷 40 空氣排出單元 100 電漿處理裝置 110 上部電極 112 水平擴散單元 112a 氣體輸送管 112b 擴散元件 114 喷頭 116 氣體供應通道 1274791 118 緊固件 120 下部電極 122 通孔 130 内部頂升銷 140 空氣排出單元 MFC 質量流控制器 S 基板1 plasma processing device 10 upper electrode 12 gas distribution plate 12a channel 12b through hole 14 nozzle 20 lower electrode 22 through hole 30 internal jacking pin 40 air discharge unit 100 plasma processing device 110 upper electrode 112 horizontal diffusion unit 112a gas delivery Tube 112b Diffusion Element 114 Head 116 Gas Supply Channel 1274791 118 Fastener 120 Lower Electrode 122 Through Hole 130 Internal Top Pin 140 Air Discharge Unit MFC Mass Flow Controller S Substrate