1273984 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種流體喷射裝置及其製造方法，且 特別是有關於一種微流體喷射裝置及其製造方法。 【先前技術】 微流體喷射裝置近來已廣泛地運用於資訊產業，例如 噴墨印表機或類似設備中。隨著微系統工程(micro system engineering)的逐步開發，此種流體喷射裝置逐漸有其他眾 多領域之應用，例如燃料喷射系統(fuel injection system)、 細胞篩選（cell sorting)、藥物釋放系統（drug delivery system)、噴印光刻技術(print lithography)及微喷射推進系 統（micro jet propulsion system)等。 第1圖揭示一種採用喷孔片貼合技術之流體喷射裝置 1〇〇，請參照第1圖，一基底102上包括一用以驅動流體之 加熱器104，基底102中係形成有一流體通道106，且基底 102上係形成有一侧壁結構層1〇8,另外，利用微影及蝕刻 技術在一噴孔片110上形成喷孔112,並將製作好喷孔112 之喷孔片110接合於侧壁結構層108上。 第2A〜2B圖揭示一種習知的單石化的流體喷射裝置 200之製造方法，首先，請參照第2A圖，提供一基底202， 並於基底202上形成一圖形化之犧牲層204，後續，形成 一結構層206覆蓋犧牲層204及基底202。 接下來，請參照第2B圖，圖形化結構層206以形成一 喷孔208，蝕刻基底202，以形成流體通道210，並移除犧 0535-A21414TWF(N2)；A05211；WAYNE 5 1273984 、 牲層204，以形成流體腔212。在上述一般的習知技術中， * 在無論是單石化製程或是喷孔片貼合技術中，喷孔Π 2、 208大小均限制於光罩和黃光製程線寬極限，且一但選定 特定之光罩，則喷孔大小無法更動，或需要改變喷孔之尺 寸時，則必須另外使用不同的光罩。 _ 【發明内容】 根據上述問題，本發明之目的為提供一種流體喷射裝 置及其製造方法，其喷孔尺寸不限制於光罩和黃光製程線 • 寬極限，且在製程上較具彈性。 根據上述目的，本發明提供一種喷孔片之製造方法。 首先，圖形化基板以形成一喷孔，其後，形成一内襯層， 以減小喷孔之尺寸，其中内襯層僅位於喷孔之側壁上。 本發明提供一種流體喷射裝置之製造方法。首先，形 成一圖案化之犧牲層於基底上，形成一結構層於犧牲層和 基底上。其後，圖形化結構層，以形成一喷孔，移除犧牲 _ 層，以形成一流體腔。接著，於喷孔之側壁上，形成一内 襯層，以減小喷孔之尺寸。 本發明提供一種流體喷射裝置之製造方法。首先，形 ^ 成一侧壁結構層於基底上，以定義出預定形成一流體腔之 區域。其後，提供一基板，並圖形化基板，以形成一喷孔。 後續，於喷孔之侧壁上，形成一内襯層，以縮小喷孔之尺 寸，將具有縮小尺寸喷孔之基板接合於側壁結構層上，以 形成一流體腔。 本發明提供一種流體噴射裝置，包括一設置於基底上 0535-A21414TWF(N2)；A05211 ；WAYNE 6 !273984 之侧壁結構層，一設置於侧壁結構層上之喷孔片，以形成 售 一流體腔，其中噴孔片包栝一喷孔及一内襯層，僅位於咳 孔之侧壁上。 【實施方式】 以下將以實施例詳細說明做為本發明之參考，且範挪 • 係伴隨著圖式說明之。在圖式或描述中，相似或相同之鄯 - 分係使用相同之圖號。在圖式中，實施例之形狀或是厚度 _ 可擴大，以簡化或是方便標示。圖式中各元件之部分將以 刀別4田述說明之，值得注意的是’圖中未緣示或描述之元 件’可以具有各種熟習此技藝之人士所知的形式。此外， 當敘述一層係位於一基板或是另一層上時，此層可直接位 於基板或是另一層上，或是其間亦可以有中介層。 第3A圖〜第3F圖揭示本發明一實施例喷孔片之製造 ， 方法’首先，請參照第3A圖，提供一基板302，基板302 ^ 可由例如金或是鎳之金屬所組成，或是例如光阻之高分子 _ 材料所組成，此外，基板302亦可以是陶瓷材料等其它材 料所組成。接下來，利用習知的微影及蝕刻方法或是鑽孔 '方去，於基板302上形成一喷孔304，喷孔304之直徑可 - 依照產品需求或是製程搭配決定，一般來說，喷孔3〇4之 直徑係介於50μπι〜200μηι。 接下來，請芩照第3Β圖，形成一犧牲層3〇6於基板 302上，犧牲層306可以為例如光阻之高分子，但本發明 不限於此，犧牲層306亦可以為例如氧化石夕或氮化石夕之介 電材料，或是其它材料所組成。.需注意的是犧牲層3〇6不 0535-Α21414TWF(N2)；A05211 ； WAYNE n 1273984 乂成於貝孔304之側壁上，為達成此目的可使用例如噴灑 P y coat)之㈣技術形成犧牲層，噴丨麗之技術係利用嘴 :來回掃描’塗佈而形成犧牲層306,此種方法較不易於 ::孔:〇4之侧壁3〇8上形成犧牲層，而犧牲層3〇6僅會形 、二貝孔3〇4外之基板302表面，而噴灑技術之掃描速度 ^流速等製程參逮則可依照噴孔之大小決定之。另外，亦 了使用額外之微影及㈣製程㈣形成於喷孔侧壁 犧牲層。 〜BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a fluid ejection device and a method of fabricating the same, and more particularly to a microfluid ejection device and a method of fabricating the same. [Prior Art] Microfluid ejection devices have recently been widely used in the information industry, such as ink jet printers or the like. With the gradual development of micro system engineering, such fluid ejection devices are gradually being used in many other fields, such as fuel injection systems, cell sorting, drug delivery systems (drug delivery). System), print lithography, and micro jet propulsion system. 1 shows a fluid ejection device 1A using a orifice sheet bonding technique. Referring to FIG. 1, a substrate 102 includes a heater 104 for driving a fluid, and a fluid passage 106 is formed in the substrate 102. And a sidewall structure layer 1 〇 8 is formed on the substrate 102. Further, an irradiance 112 is formed on the orifice sheet 110 by lithography and etching, and the orifice sheet 110 on which the orifice 112 is formed is bonded to the orifice sheet 110. On the sidewall structure layer 108. 2A-2B illustrate a conventional method for manufacturing a single petrochemical fluid ejection device 200. First, referring to FIG. 2A, a substrate 202 is provided, and a patterned sacrificial layer 204 is formed on the substrate 202, and subsequently, A structural layer 206 is formed overlying the sacrificial layer 204 and the substrate 202. Next, referring to FIG. 2B, the structural layer 206 is patterned to form a nozzle hole 208, the substrate 202 is etched to form the fluid channel 210, and the sacrifice 0535-A21414TWF(N2); A05211; WAYNE 5 1273984, the layer is removed. 204 to form a fluid chamber 212. In the above conventional techniques, * in either the single petrochemical process or the orifice bonding technique, the sizes of the orifices Π 2, 208 are limited to the limits of the mask and the yellow line width, and are selected For a specific reticle, if the size of the orifice cannot be changed, or if the size of the orifice needs to be changed, a different reticle must be used. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a fluid ejecting apparatus and a method of fabricating the same, which are not limited in size to a mask and a yellow process line, and are more flexible in the process. In accordance with the above objects, the present invention provides a method of manufacturing an orifice sheet. First, the substrate is patterned to form an orifice, and thereafter an inner liner is formed to reduce the size of the orifice, wherein the inner liner is located only on the sidewall of the orifice. The present invention provides a method of manufacturing a fluid ejection device. First, a patterned sacrificial layer is formed on the substrate to form a structural layer on the sacrificial layer and the substrate. Thereafter, the structural layer is patterned to form an orifice and the sacrificial layer is removed to form a fluid chamber. Next, an inner liner is formed on the side wall of the orifice to reduce the size of the orifice. The present invention provides a method of manufacturing a fluid ejection device. First, a sidewall structure layer is formed on the substrate to define a region where a fluid chamber is to be formed. Thereafter, a substrate is provided and the substrate is patterned to form an orifice. Subsequently, an inner liner is formed on the sidewall of the orifice to reduce the size of the orifice, and the substrate having the reduced orifice is joined to the sidewall structure layer to form a fluid chamber. The present invention provides a fluid ejection device comprising a sidewall structure layer disposed on a substrate 0535-A21414TWF(N2); A05211; WAYNE 6 !273984, and a orifice sheet disposed on the sidewall structure layer to form a first-class product. The body cavity, wherein the orifice sheet comprises an orifice and an inner liner, and is only located on the side wall of the cough. [Embodiment] Hereinafter, a detailed description of the embodiments will be made as a reference for the present invention, and the description will be made with the accompanying drawings. In the drawings or descriptions, similar or identical 鄯-segments use the same figure number. In the drawings, the shape or thickness _ of the embodiment can be expanded to simplify or facilitate the marking. Portions of the various elements of the drawings will be described in the drawings, and it is noted that the elements that are not shown or described in the drawings may be in a form known to those skilled in the art. In addition, when a layer is placed on a substrate or another layer, the layer may be directly on the substrate or another layer, or may have an interposer therebetween. 3A to 3F illustrate the manufacture of an orifice sheet according to an embodiment of the present invention. First, referring to FIG. 3A, a substrate 302 is provided. The substrate 302 can be composed of a metal such as gold or nickel, or For example, the photoresist polymer is composed of materials, and the substrate 302 may be made of other materials such as ceramic materials. Next, using a conventional lithography and etching method or drilling, a hole 304 is formed on the substrate 302. The diameter of the nozzle 304 can be determined according to product requirements or process combinations. Generally, The diameter of the orifice 3〇4 is between 50 μm and 200 μm. Next, please refer to FIG. 3 to form a sacrificial layer 3〇6 on the substrate 302. The sacrificial layer 306 may be a polymer such as a photoresist, but the invention is not limited thereto, and the sacrificial layer 306 may also be, for example, an oxidized stone. Xi or nitrite dielectric materials, or other materials. It should be noted that the sacrificial layer 3〇6 is not 0535-Α21414TWF(N2); A05211; WAYNE n 1273984 is formed on the sidewall of the beacon 304, and for this purpose, a technique such as spraying the Py coat can be used to form a sacrifice. Layer, squirting technology uses the mouth: scan back and forth 'coating to form the sacrificial layer 306, this method is less easy:: hole: the sacrificial layer is formed on the sidewall 3〇8 of the crucible 4, and the sacrificial layer 3〇 6 Only the surface of the substrate 302 outside the shape of the two-hole hole 3〇4, and the scanning speed of the spraying technique, such as the flow rate, can be determined according to the size of the nozzle hole. In addition, additional lithography is used and (4) process (4) is formed on the sacrificial layer of the sidewall of the nozzle. ~
後續’請參照帛3C目，以金屬鍍膜法形成一電鑛起始 :10於犧牲層306上和噴孔之側壁3〇8，金屬鍍膜法可 2例如物理氣相沉積或蒸鍍法等之金屬沉積製程，而雷 鍍=始層31〇可以為Ti、Tiw、Cr、Au、Ni、Cu或/和U ，金屬所組成。較佳者，電鍍起始層310可包括鈦金屬声 曰位於放金屬層上之金金屬層，鈦金屬係用於增進金屬與 之附著力，厚度較佳為小於麵埃，金金屬層係 用乂备笔鍍起始作用，厚度可約為2〇〇〇埃〜8〇〇〇埃。此外， ^鍍起始層亦可包括鈦金屬層和位於鈦金屬層上之錄金屬 运:另外，在本發明之較佳實施例中，基板302之底部係 不形成有電魏始層。在本發明之_實施射，在形成喷 L 3CH日守’可使用較大尺寸之喷孔304(例如直徑2〇〇μιη以 之i孔）’以使在形成電鍍起始層31〇a時，可使電鍍起 始層310a均勻的形成於噴孔之側壁308上。 、.接著，請參照第3D圖，進行一掀除製程〇ift_〇ff)，移 除犧牲層306，並藉以移除位於犧牲層3〇6上之電鍍起妒 0^A21414TWF(N2)；A05211；WAYNE ο 1273984 “ 層310，僅保留位於喷孔侧壁308上之電鍍起始層31加。 ' 以例如高分子之犧牲層306為例’可使用移除劑（stripper) 移除犧牲層306，以例如光阻之犧牲層為例，可使用顯影 製程移除犧牲層306,另外，以例如介電層之犧牲層為例， 可使用例如濕钱刻之等向性钱刻移除犧牲層306。 . 其後，請參照第3E圖，以一電鍍方法於電鍍起始層 310a上形成一電鍍層312,由於在電鍍製程之電鍵液中: 僅有電鍍起始層310&表面會產生反應，因此，電鍍層312 • 僅會形成於喷孔304中之電鍍起始層31〇a上，其中電鐘層 312和電鍍起始層310a構成一内襯層314,以縮小嗔孔3〇4 之尺寸。需注意的是，在電鍍製程中，喷孔304内之電鐘 層312會隨著電鍍時間增加而增厚，因此，喷孔3〇4尺寸 也隨之縮小’嘴孔304尺寸之縮小置在定電流之條件下盘 電鍍時間成正比，因此，藉由控制電鍍之時間，即可控制 喷孔304之尺寸。 接下來，請參照第3F圖，一基底300上包括一用以驅 ⑩ 動流體之流體驅動元件322 ’基底300中係形成有一流體 通道324，且基底300上係形成有一侧壁結構層326，並將 包括縮小喷孔之基板302(亦即喷孔片）接合於侧壁結構層 326上，以形成流體腔328。 第4A圖〜第4H圖係揭示本發明一實施例以單石化方 法製造流體喷射裝置之製程剖面示意圖，首先，請參照第 4A圖，提供一基底400，基底400包括石夕、玻璃，和/或其 它材料所組成，較佳者，基底400係為一發基底，其後， 0535-A21414TWF(N2)；A05211 ；WAYNE 9 Ϊ273984 於基底400上形成一例如多晶矽或金屬組成之控制閘極 402，接著，形成例如氧化矽、氮化矽或氮氧化矽所組成之 第一介電層404,覆蓋控制閘極402和部分基底4〇〇。後續， 形成例如鋁或銅之第一導電層406於閘極介電層4〇4和部 刀基底400上，其中，位於控制閘極402兩侧之第一導電 • 層406可分別供作源極407和汲極409，而控制閘極4〇2 • 及其相關電路係為本實施例流體喷射裝置之流體控制元件 413 〇 接著，形成一例如氧化矽、氮化矽或氮氧化矽所組成 之第二介電層408於部分第一導電層406、第一介電層4〇4 和基底400上，需注意的是，第二介電層4〇8暴露部9分第 一導電層406和部分之汲極4〇7,以做為插塞(via)，後續， 形成一電阻層416覆蓋部份第一導電層406和部分源極 ，4的上，接著，形成一例如鋁或銅之第二導電層々a於雷 •阻層416上’其中第二導電層418和電阻層416緊密連結。 _後績，以例如微影蝕刻製程圖形化第二導電層418和電阻 層416接著，圖案化加熱元件區之第二導電層Μ。 .分電阻層-裸露，如此，電阻層416和其下之第= •層406構成-加熱元件415、其後，形成一例如包括敗 和SiN之鈍化層420於第二導電層418和電阻層416上， 並形成一例如Ta所組成之金屬保護層422於加熱元件々Μ 之電阻層416上，後續，圖案化鈍化層42〇以形成接觸塾 417 〇 接下來，經由例如沉積或塗佈，並進行微影定義步驟，Subsequent 'please refer to 帛3C, to form an electric ore starting by metal coating method: 10 on the sacrificial layer 306 and the side wall 3〇8 of the orifice, and the metal coating method can be 2, for example, physical vapor deposition or vapor deposition. The metal deposition process, and the thunder plating = the initial layer 31 can be composed of Ti, Tiw, Cr, Au, Ni, Cu or / and U, metal. Preferably, the plating initiation layer 310 may include a gold metal layer on which the titanium metal sonar is placed on the metal layer, and the titanium metal is used to enhance the adhesion of the metal, and the thickness is preferably less than the surface area, and the gold metal layer is used. The initial effect of the pen plating is about 2 angstroms to 8 angstroms. In addition, the plating initiation layer may also include a titanium metal layer and a metal layer on the titanium metal layer: in addition, in the preferred embodiment of the invention, the bottom layer of the substrate 302 is not formed with an electrical layer. In the present invention, in the formation of the spray L 3CH, the larger size of the orifice 304 (for example, the diameter of 2 μμη i hole) can be used to make the plating initiation layer 31〇a The plating starting layer 310a can be uniformly formed on the sidewall 308 of the nozzle hole. Next, please refer to the 3D figure, perform a process 〇ift_〇ff), remove the sacrificial layer 306, and thereby remove the electroplating 妒0^A21414TWF(N2) located on the sacrificial layer 3〇6; A05211; WAYNE ο 1273984 "Layer 310, only the plating initiation layer 31 on the sidewall 308 of the orifice is left. ' For example, the sacrificial layer 306 of the polymer can be used to remove the sacrificial layer using a stripper. 306. Taking a sacrificial layer such as a photoresist as an example, the sacrificial layer 306 may be removed using a development process. In addition, for example, a sacrificial layer of a dielectric layer may be used, for example, an isotropic burn-off is sacrificed. Layer 306. Thereafter, referring to FIG. 3E, a plating layer 312 is formed on the plating starting layer 310a by an electroplating method, because in the electrosetting solution of the electroplating process: only the electroplating starting layer 310 & The reaction, therefore, the plating layer 312 is only formed on the plating starting layer 31〇a in the nozzle hole 304, wherein the electric clock layer 312 and the plating starting layer 310a constitute an inner liner layer 314 to reduce the pupil 3〇 4 dimensions. It should be noted that in the electroplating process, the electric clock layer 312 in the nozzle hole 304 will follow the electroplating process. When the thickness is increased and thickened, the size of the orifice 3〇4 is also reduced. The reduction of the size of the nozzle hole 304 is proportional to the plating time under the condition of constant current. Therefore, by controlling the plating time, it can be controlled. The size of the nozzle hole 304. Next, referring to FIG. 3F, a substrate 300 includes a fluid driving element 322 for driving a fluid, and a fluid passage 324 is formed in the substrate 300, and the substrate 300 is formed with a fluid passage 324. The sidewall structure layer 326 and the substrate 302 (ie, the orifice sheet) including the reduced orifice are joined to the sidewall structure layer 326 to form a fluid chamber 328. Figures 4A to 4H show an embodiment of the present invention. A schematic cross-sectional view of a process for manufacturing a fluid ejecting apparatus by a single petrochemical method. First, referring to FIG. 4A, a substrate 400 is provided. The substrate 400 comprises a stone, a glass, and/or other materials. Preferably, the substrate is 400. A primary substrate, thereafter, 0535-A21414TWF(N2); A05211; WAYNE 9 Ϊ 273984 forms a control gate 402, such as polysilicon or metal, on the substrate 400, followed by formation of, for example, hafnium oxide, tantalum nitride or nitrogen. The first dielectric layer 404 composed of the ruthenium cover covers the control gate 402 and a portion of the substrate 4 〇〇. Subsequently, a first conductive layer 406 such as aluminum or copper is formed on the gate dielectric layer 4 〇 4 and the knive base 400, wherein the first conductive layer 406 on both sides of the control gate 402 can be used as the source 407 and the drain 409, respectively, and the control gate 4 〇 2 and its related circuit are the fluid ejection of the embodiment. The fluid control element 413 of the device then forms a second dielectric layer 408, such as hafnium oxide, tantalum nitride or hafnium oxynitride, on portions of the first conductive layer 406, the first dielectric layer 4〇4, and the substrate 400. In addition, it should be noted that the second dielectric layer 4〇8 exposed portion 9 is divided into the first conductive layer 406 and a portion of the drain 4〇7 as a via, and subsequently, a resistive layer 416 is formed to cover A portion of the first conductive layer 406 and a portion of the source, 4, and then a second conductive layer, such as aluminum or copper, is formed on the barrier layer 416. The second conductive layer 418 and the resistive layer 416 are closely coupled. . After the performance, the second conductive layer 418 and the resistive layer 416 are patterned by, for example, a photolithography process, and then the second conductive layer 加热 of the heating element region is patterned. The sub-resistive layer - bare, such that the resistive layer 416 and the underlying layer 406 form a heating element 415, thereafter forming a passivation layer 420 comprising, for example, a dissipative SiN to the second conductive layer 418 and the resistive layer 416, and a metal protective layer 422, such as Ta, is formed on the resistive layer 416 of the heating element ,, and subsequently, the passivation layer 42 is patterned to form a contact 塾 417. Next, via, for example, deposition or coating, And perform lithography definition steps,
〇535-A21414TWF(N2)；A05211 ；WAYNE 10 1273984 =-圖形化之第1牲層424於基底 在本實施你丨中繁—^ A r, 卑 面40 1上， 面。第-犧牲層424 J I為與流體控制元件413之同― 光阻和/或聚合物之高八^例如氧化物之介電層或是例如 度可介於一〜子層戶斤組成，第1牲層似之厚 接下來’請參照第同、 或是墓鍍法，形成.雷心二’以例如物理氣相沉積法(pVD) 疋'、、、以域讀起始層426 / 牲層424上，電缠起始層你需和其下之;=二 有良好之附著性，較佳者，電鐘起始層3可 層和位於鈦金屬層上之銅金屬u括鈦至屬 兵日日片表面之附者力，厚度較佳為小於 蜀 用以當電鍍起始作用，产痄了从4 、 矢’銅至屬係 ^田电狀鄕用&度可約為2GGG埃〜8_拔。此冰 電鑛起始層426亦可包括鈦全^ 、 、 金屬層。後續，以旋轉塗体位於敎金屬層上之鎳 圖案化之光阻層似，圖==續的微影製程，形成一 上之預疋㈣科之位置與預定形成結構層以外之 接^观—結構層伽於第 因此，在魏之製对，結==液中不會產生反應’ 428 ^ ^ ^ ^ /v ^ 曰43〇會形成在未被光阻層 428復盍之部分，其中結構層43〇之厚度可介於 5μπι〜ΙΟΟμιη。後續，請參照第4C圖 、 或電漿灰化移除上述光阻層428«彡、去除離_Γ) 之後，可於結構層430巾形成 移除上从阻層428 貝孔432。在此需注意的〇 535-A21414TWF (N2); A05211; WAYNE 10 1273984 = - Graphical first layer 424 on the substrate In this implementation, you can use -^ A r, 卑面40 1, face. The first sacrificial layer 424 JI is the same as the fluid control element 413 - the photoresist and/or the high dielectric layer of the polymer, such as an oxide layer, or the degree may be, for example, one to the sub-layer, the first The thickness of the layer is similar. 'Please refer to the same, or tomb plating method to form. Leixin II' to, for example, physical vapor deposition (pVD) 疋 ', ,, read the initial layer 426 / layer On 424, the initial layer of electric winding needs to be underneath; =2 has good adhesion, preferably, the initial layer of the electric clock is 3 layers and the copper metal on the titanium metal layer is included in the titanium. The surface of the surface of the Japanese film, the thickness is preferably less than 蜀 used for the initial role of electroplating, calving from 4, y 'copper to genus ^ 电 电 & & & & & 度 度 度 度 度 度 度 度 〜 〜 〜 〜 8_ pull. The iceberg initiation layer 426 can also include a titanium full, metal layer. Subsequently, the nickel-patterned photoresist layer on the ruthenium metal layer is rotated, and the lithography process is continued, forming a position on the top of the pre- 疋 (4) branch and a predetermined structure layer. - the structural layer is gamma. Therefore, in the case of Wei, the reaction will not occur in the junction == liquid ' 428 ^ ^ ^ ^ /v ^ 曰43〇 will form part of the retracement without the photoresist layer 428, The thickness of the structural layer 43 can be between 5 μπι and ΙΟΟμιη. Subsequently, please refer to FIG. 4C, or plasma ashing to remove the photoresist layer 428 «彡, remove _ Γ 之后), after the formation layer 430 can be removed to remove the upper barrier layer 428 hole 432. Need to pay attention here
0535-A21414TWF(N2);A05211 ；WAYNE 1273984 是，雖然本發明揭示上述移除光阻層428以形成喷孔432 的方法，但本發明不限於此，本發明亦可先形成結構層 430，再進行一微影蝕刻步驟圖形化結構層43〇，以定義出 喷孔432。後續，移除喷孔432内之電鍍起始層426。 接著，請參照第4D圖，進行一例如微影蝕刻方法，或 喷沙法，圖形化基底之第二面403，以形成一流體通道 434，暴露出第一犧牲層424，之後，經由流體通道434， 以一蝕刻方法，移除第一犧牲層424,以形成連通流體通 道434之流體腔436。當第一犧牲層424是高分子所組成 時’可以電漿灰化方法或是以去除劑（stripper)移除高分子 所組成之第一犧牲層424。本發明不限於此，亦即，形成 流體通道434的步驟順序可交換，例如，可先經由喷孔432 移除第一犧牲層424，之後，再於基底4〇〇之第二面403 形成流體通道434。 接下來，請參照第4E圖，形成一第二犧牲層48〇於結 構層430上，第二犧牲層480之組成和形成方法係可類似 於上述實施例，為簡潔，在此不詳細描述。需注意的是第 二犧牲層480不形成於喷孔432之側壁上。 後續，請參照第4F圖，以金屬鍍膜法形成一電鍍起始 層482於第一犧牲層480上和噴孔432之侧壁，金屬鍍膜 法可以為例如物理氣相沉積等之金屬沉積製程，而電鍍起 始層482可以為Ti、TiW、Cr、Au、州、&或％ Ta之金 屬所組成’同樣的，犧牲層480之組成和形成方法係可類 似於上述貫施例，為間潔，在此不詳細描述。 0535-A21414TWF(N2)；A05211 ；WAYNE ίο 1273984 請參照第4G圖，谁耔—抓队细 丁批^除2程（lift-off)，移除第二 犧牲層480，並藉以移除位於繁_ ，、 於弟—犧牲層480上之電鍍起 始層482，僅保留位於喷孔彳丨 、贺孔432侧壁上之部分電鍍起始層 482a。以例如高分子之笫一膳 · 卜 乐—犧牲層48〇為例，可使用移除 : :Γ)移除第二犧牲層480，以例如光阻之第二犧牲 層彻為例，可❹㈣製程移除第二犧牲層彻’另外， = 电層之第—犧牲層480為例，可使用例如濕蝕刻 之寺向性蝕刻移除第二犧牲層480。 请茶照第4H圖，以《一雷赛古、ι+Λ ^ ^ ^ 包鏡方法於笔鍍起始層480a上 ^-電鍍層綱，由於在電鑛製程之電鐘液中，僅有電 ，起始層482a表面會產生反應，因此，電鐘層僅會形 ^實孔432中之電鍍起始層482a上，其中電鍵層484和 电鍍起始層482a構成一内襯層4%，以縮小噴孔432之尺 寸。需注意的是，在電鍍製程中，噴孔松内之電鐘層彻 會隨著電鍍時間增加而增厚，因此，噴孔432尺寸也隨之 縮小’熟432尺寸之縮小量在定電流之條件下於電鍍時 間成正比，因此，藉由控制電鍍之時間，即可控制喷孔432 之尺寸。、 根據上述實施例，需要改變噴孔之尺寸時，不須另外 使用不同的光罩’即可改變噴孔之大小，可減少光罩之製 作成本，且製程較具彈性。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何_此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤舞，因此本發明之保護 0535-A21414TWF(N2)；A05211 ；WAYNE 13 1273984 範圍當視後附之申請專利範圍所界定者為準。0535-A21414TWF(N2); A05211; WAYNE 1273984. Although the present invention discloses the above method of removing the photoresist layer 428 to form the nozzle hole 432, the present invention is not limited thereto, and the present invention may also form the structural layer 430 first. A lithography etching step is performed to pattern the structural layer 43A to define the orifices 432. Subsequently, the plating initiation layer 426 in the orifice 432 is removed. Next, referring to FIG. 4D, a second image 403 of the substrate is patterned, such as a lithography process, or a sandblasting method to form a fluid channel 434, exposing the first sacrificial layer 424, and then passing through the fluid channel. 434, the first sacrificial layer 424 is removed by an etching method to form a fluid chamber 436 that communicates with the fluid channel 434. When the first sacrificial layer 424 is composed of a polymer, the first sacrificial layer 424 composed of a polymer may be removed by a plasma ashing method or a stripper. The present invention is not limited thereto, that is, the steps of forming the fluid passage 434 may be sequentially exchanged, for example, the first sacrificial layer 424 may be removed first through the injection hole 432, and then the fluid may be formed on the second surface 403 of the substrate 4 Channel 434. Next, referring to FIG. 4E, a second sacrificial layer 48 is formed on the structural layer 430. The composition and formation method of the second sacrificial layer 480 can be similar to the above embodiment, and is not described in detail herein. It should be noted that the second sacrificial layer 480 is not formed on the sidewall of the nozzle hole 432. Subsequently, referring to FIG. 4F, a plating initiation layer 482 is formed on the first sacrificial layer 480 and the sidewall of the nozzle hole 432 by a metal plating method, and the metal plating method may be a metal deposition process such as physical vapor deposition. The plating initiation layer 482 may be composed of Ti, TiW, Cr, Au, state, & or % Ta metal. Similarly, the composition and formation method of the sacrificial layer 480 may be similar to the above embodiment. Clean, not described in detail here. 0535-A21414TWF(N2);A05211 ;WAYNE ίο 1273984 Please refer to Figure 4G, who will remove the second sacrificial layer 480 and remove the second sacrificial layer 480. The plating initiation layer 482 on the sacrificial layer 480 retains only a portion of the plating initiation layer 482a on the sidewalls of the orifice 孔 and the hole 432. For example, in the case of a polymer 笫 膳 · 卜 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二The process removes the second sacrificial layer and, in addition, the first sacrificial layer 480 of the electrical layer, the second sacrificial layer 480 can be removed using, for example, wet etching. Please refer to the 4th picture of the tea photo, with a "Lei Saigu, ι+Λ ^ ^ ^ encapsulation method on the pen plating initial layer 480a ^ - electroplating layer, because in the electric bell process of the electric clock, only Electrically, the surface of the starting layer 482a will react. Therefore, the electric clock layer will only form the plating starting layer 482a in the hole 432, wherein the electric bonding layer 484 and the plating starting layer 482a constitute an inner liner 4%. To reduce the size of the orifice 432. It should be noted that in the electroplating process, the electric clock layer in the nozzle hole is thickened with the increase of the plating time. Therefore, the size of the nozzle hole 432 is also reduced. The condition is proportional to the plating time, so the size of the orifice 432 can be controlled by controlling the plating time. According to the above embodiment, when the size of the nozzle hole needs to be changed, the size of the nozzle hole can be changed without using a different mask, and the manufacturing cost of the mask can be reduced, and the process is more flexible. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and it is intended that the invention may be modified and practiced without departing from the spirit and scope of the invention. Protection of the Invention 0535-A21414TWF (N2); A05211; WAYNE 13 1273984 The scope of the invention is defined by the scope of the appended claims.
0535-A21414TWF(N2)；A05211 ； WAYNE Η 1273984 【圖式簡單說明】 第1圖揭示一種習知的流體喷射裝置。 第2A〜2B圖揭示一種習知的單石化的流體喷射裝置之 製造方法。 第3A圖〜第3F圖揭示本發明一實施例喷孔片之喷孔 之製造方法。 第4A圖〜第4H圖係揭示本發明一實施例以單石化方 法製造流體喷射裝置之製程剖面示意圖。 【主要元件符號說明】 100〜流體喷射裝置； 102〜基底； 104〜加熱器； 106〜流體通道； 108〜侧壁結構層； 110〜喷孔片； 112〜噴孔； 200〜流體喷射裝置； 202〜基底； 204〜犧牲層； 206〜結構層； 208〜喷孔； 210〜流體通道； 212〜流體腔； 302〜基板； 304〜喷孔； 306〜犧牲層； 308〜侧壁； 310〜電鍍起始層； 310a〜電鍍起始層； 312〜電鍍層； 314〜内襯層； 300〜基底； 322〜流體驅動元件； 324〜流體通道； 326〜侧壁結構層； 3 28〜流體腔； 400〜基底； 0535-A21414TWF(N2)；A05211 ；WAYNE 15 1273984 ’ 402〜控制閘極； • 406〜第一導電層； 408〜第二介電層； 413〜流體控制元件； 416〜電阻層； 418〜第二導電層； 422〜金屬保護層； 426〜電鑑起始層； • 430〜結構層； 434〜流體通道； 480〜第二犧牲層； 484〜電鍍層； 404〜第一介電層； 407〜源極； 409〜汲極； 415〜加熱元件； 417〜接觸墊； 420〜鈍化層； 424〜第一犧牲層； 428〜圖案化之光阻層； 432〜喷孔； 436〜流體腔； 482〜電鍍起始層； 490〜内概層。 0535-A21414TWF(N2)；A05211 ；WAYNE 160535-A21414TWF(N2); A05211; WAYNE Η 1273984 [Schematic Description of the Drawing] Fig. 1 discloses a conventional fluid ejection device. Figures 2A to 2B show a conventional method of manufacturing a single petrochemical fluid ejecting apparatus. 3A to 3F are views showing a method of manufacturing the orifice of the orifice sheet according to an embodiment of the present invention. 4A to 4H are schematic cross-sectional views showing a process of manufacturing a fluid ejecting apparatus by a single petrochemical method according to an embodiment of the present invention. [Description of main components] 100~ fluid ejection device; 102~ substrate; 104~heater; 106~ fluid channel; 108~ sidewall structure layer; 110~ orifice sheet; 112~ orifice; 200~ fluid ejection device; 202~substrate; 204~sacrificial layer; 206~structural layer; 208~spray hole; 210~fluid channel; 212~fluid cavity; 302~substrate; 304~spray hole; 306~sacrificial layer; 308~sidewall; Plating starting layer; 310a~ plating starting layer; 312~ plating layer; 314~ inner liner layer; 300~ substrate; 322~ fluid drive element; 324~ fluid passage; 326~ sidewall structure layer; 400~substrate; 0535-A21414TWF(N2); A05211; WAYNE 15 1273984 '402~ control gate; • 406~first conductive layer; 408~second dielectric layer; 413~fluid control element; 416~resistive layer 418~second conductive layer; 422~metal protective layer; 426~electron starting layer; 430~structural layer; 434~fluid channel; 480~second sacrificial layer; 484~electroplated layer; Electrical layer; 407~source; 409~ 415~ heating element; 417~ contact pad; 420~passivation layer; 424~first sacrificial layer; 428~patterned photoresist layer; 432~spray hole; 436~fluid cavity; 482~electroplating starting layer; 490~ inner layer. 0535-A21414TWF(N2); A05211; WAYNE 16