1273686 九、發明說明： 【發明所屬之技術領域】 本發明係有關於影像感測器晶片之半導體封裝技術，特 別係有關於一種影像感測器之玻璃覆晶封裝構造 (Chip_〇n-Glass (COG) package) 〇 【先前技術】 在早期的影像感測器封裝構造中，影像感測器晶片係黏 鲁 ιΛ於印刷電路板上，利用銲線達到兩者電性連接。一光學 玻璃係在封裝前預先貼設在晶片之主動面上，或是在封裝之 後黏著一設在基板上之擋牆上，故整個封裝的厚度變得較 厚。近年來影像感測器封裝構造係嘗試變更為玻璃覆晶 (Chip-〇n-Giass，COG)封裝，影像感測器晶片具有電鍍形 成之金凸塊，以接合於一具線路層之玻璃基板上，同時省除 打線之步驟，符合目前半導體產品輕、薄、短、小之要求， 然而點膠膠體在點塗過程中會流動以包覆影像感測器晶片 鲁 之凸塊，其流動性常污染影像感測器晶片之光感測區。此 外，點膠膠體之烘烤過程中，會產生揮發性氣體而污染該光 感測區。 如第1圖所示’習知影像感測器之玻璃覆晶封裝構造1 〇〇 係包含一玻璃基板110、一影像感測器晶片12〇以及一點塗 膠體130。該影像感測器晶片120之一主動面121係包含有 一光感測區122，複數個電鍍形成之金凸塊123係設置在該 主動面121上且位在該光感測區122之外圍。該玻璃基板110 之一線路層上係包含有複數個連接墊111，以供將該些金凸 1273686 塊123之接合。而可使用底部填充膠（underfill material)之點 塗膠體130形成於該玻璃基板110與該影像感測器晶片ι2〇 之間。通常電鍍金凸塊123硬質較高，該玻璃基板110與該 影像感測器晶片120之間的間隙無縮小彈性，該點塗膠體 130會任意流動，而污染至該感測區122，發生光折射與光 干擾之問題，導致影像感測失真。此外，通常該點塗膠體13 〇 須加熱烘烤以達到固化，在烘烤該點塗膠體130時，該點塗 > 膠體130會排出揮發性氣體，使該影像感測器晶片12〇之該 光感測區122受到污染，造成該光感測區122内之影像感測 元件故障或感測靈敏度劣化。 【發明内容】 本發明之主要目的係在於提供一種影像感測器之玻璃覆 晶封裝構造，一玻璃基板係具有一可環繞一光感測區之密閉 播環’且一影像感測器晶片之主動面上係設置有複數個可變 形凸塊（deformable bumps)，當該些可變形凸塊接合至該玻 > 璃基板之連接墊時可縮小影像感測器晶片與玻璃基板之間 的間隙’使該密閉擋環更易於阻擋一點塗膠體流入該影像感 測器晶片之光感測區，確保影像感測器之點膠效果。 本發明之次一目的係在於提供一種影像感測器之玻璃覆 晶封裝構造，其中所使用的點塗膠體係為具有固化收縮性之 非導電膠（NCP，Non-Conductive Paste)，能在點塗膠體固化 時進一步縮小影像感測器晶片與玻璃基板之間的間隙，使該 欲閉播環更具有隔絕氣體之功效，防止點塗膠體於固化時產 生之揮發氣體滲入該光感測區内。 1273686 本毛明之再一目的係在於提供一種影像感測器之玻螭覆 晶封裝構造，其中該玻璃基板係缺乏防銲層，而使該密閉擋 ί衣與该些連接墊為表面浮凸，以使該些可變形凸塊當接合至 該玻璃基板之連接墊時能具有較大變形量，不發生斷路與接 合失敗之問題。 依據本發明，一種影像感測器之玻璃覆晶封裝構造主要 包含一玻璃基板、一影像感測器晶片以及一點塗膠體。該坡 _ 璃基板係具有複數個連接墊以及一密閉檔環。該影像感測器 晶片係設於該玻璃基板上，該影像感測器晶片係具有一主動 面，該主動面係包含一光感測區，並於該主動面上設置有複 數個可變形凸塊，以接合至該些連接墊。該點塗膠體係形成 於該玻璃基板上並局部填充在該玻璃基板與該影像感測器 晶片之間，以包覆該些可變形凸塊。其中，該密閉擋環係環 繞於該光感測區之外，以阻擋該點塗膠體流入該光感測區 内。 > 【實施方式】 依據本發明之第一具體實施例，配合第2至4圖揭示一 種影像感測器之玻璃覆晶封裝構造。如第2圖所示，該影像 感測器之玻璃覆晶封裝構造200主要包含一玻璃基板21〇、 一影像感測器晶片220以及一點塗膠體230。該玻璃基板21〇 係承載該影像感測器晶片220並提供電訊轉接與光接受路徑 之功能。該點塗膠體230係局部密封該影像感測器晶片22〇 並牢固結合該影像感測器晶片220至該玻璃基板210。於_ 具體結構中，該玻璃覆晶封裝構造200係可另包含有一軟性 1273686 電路板240，其係貼設於該玻璃基板2 1 〇之其中一側。 如第2及3圖所示，該玻璃基板2 10係具有複數個連接 塾211以及一密閉擋環2丨2。該些連接墊2丨丨係排列於該密 閉擋環2 12之周邊外圍。另，該玻璃基板2 1 〇係可另具有複 數個外接墊213，藉由線路電性連接對應之連接墊211並可 排列於該玻璃基板2 1 0之同一側邊，以供接合該軟性電路板 240或其它外導接元件。其中，該密閉擋環2丨2與該些連接 墊2 11之材質係為金（au)，具有防銹之功效，不需要另行電 鍍。而該密閉擋環212與該些連接墊211之底層係形成有一 黏著層214’以固著於該玻璃基板210，在無防銲層之保護 下仍不易剝離。其中，該黏著層之材質係可為鈦_鶴（丁丨_ W)。 該影像感測器晶片220係設於該玻璃基板210上，該影 像感測器晶片2 2 0係具有一主動面2 2 1及一相對之背面 222。該主動面221係包含一光感測區223，其内設有影像感 測元件，使該影像感測器晶片220為一 CMOS影像感測晶片 或其它感測器晶片。並於該主動面22 1上設置有複數個可變 形凸塊224(deformable bump)，其係位於該主動面221處之 複數個銲墊225上，以接合至該些連接墊211。其中，在第 2圖中之該些可變形凸塊224係為已變形之後，在第4圖中 之該些可變形凸塊224係為變形之前，其高度可控制在 10〜50微米。在晶片接合之後，該些可變形凸塊224之變形 量約為百分五十或更多。通常該些可變形凸塊224係為打線 形成之結線凸塊（stud bump)或其它軟質導電凸塊，例如是利 用打線機台將金線之一結球端燒焊於該些銲墊225上並隨即 12736861273686 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor package technology for an image sensor chip, and more particularly to a glass flip chip package structure of an image sensor (Chip_〇n-Glass) (COG) package) 先前 [Prior Art] In the early image sensor package construction, the image sensor chip was glued to the printed circuit board, and the wire was used to electrically connect the two. An optical glass is pre-applied to the active surface of the wafer before packaging, or adhered to a barrier wall provided on the substrate after the package, so that the thickness of the entire package becomes thicker. In recent years, image sensor package structures have been attempted to be changed to Chip-〇n-Giass (COG) packages, and image sensor wafers have gold bumps formed by electroplating to bond to a glass substrate of a circuit layer. At the same time, the steps of wire-cutting are eliminated, which meets the requirements of light, thin, short and small semiconductor products. However, the dispensing gel will flow during the dot coating process to cover the bumps of the image sensor wafer, and its liquidity The light sensing area of the image sensor wafer is often contaminated. In addition, during the baking process of the gelatin gel, volatile gases are generated to contaminate the light sensing region. As shown in Fig. 1, the glass flip chip package structure 1 of the conventional image sensor includes a glass substrate 110, an image sensor wafer 12A, and a dot adhesive body 130. The active surface 121 of the image sensor wafer 120 includes a light sensing region 122, and a plurality of plated gold bumps 123 are disposed on the active surface 121 and located outside the light sensing region 122. One of the circuit layers of the glass substrate 110 includes a plurality of connection pads 111 for bonding the gold bumps 1273686. The adhesive 130 may be formed between the glass substrate 110 and the image sensor wafer ι2〇 using an underfill material. Generally, the gold-plated bumps 123 are harder, and the gap between the glass substrate 110 and the image sensor wafer 120 is not reduced. The dot-coated gel 130 flows arbitrarily, and pollutes the sensing region 122 to generate light. Refraction and light interference problems cause image sensing distortion. In addition, usually, the point coating body 13 does not need to be heated and baked to achieve curing. When the point is applied to the coating body 130, the point coating > the colloid 130 discharges volatile gas to make the image sensor wafer 12 The light sensing area 122 is contaminated, causing the image sensing element in the light sensing area 122 to malfunction or the sensing sensitivity to deteriorate. SUMMARY OF THE INVENTION The main object of the present invention is to provide a glass flip chip package structure of an image sensor, wherein a glass substrate has a closed broadcast ring that surrounds a light sensing area and an image sensor chip The active surface is provided with a plurality of deformable bumps, which can reduce the gap between the image sensor wafer and the glass substrate when the deformable bumps are bonded to the connection pads of the glass substrate 'This sealing ring is easier to block a little glue from flowing into the light sensing area of the image sensor wafer, ensuring the dispensing effect of the image sensor. A second object of the present invention is to provide a glass flip-chip package structure of an image sensor, wherein the dot-coating system used is a non-conductive adhesive (NCP, Non-Conductive Paste) capable of curing shrinkage. When the glue is cured, the gap between the image sensor wafer and the glass substrate is further reduced, so that the ring to be closed has the function of shielding gas, and the volatile gas generated during the curing of the point coating colloid is prevented from infiltrating into the light sensing region. . 1273686 A further object of the present invention is to provide a glass flip chip package structure of an image sensor, wherein the glass substrate lacks a solder resist layer, and the sealing film and the connection pads are surface relief. In order to make the deformable bumps have a large amount of deformation when joined to the connection pads of the glass substrate, the problem of disconnection and joint failure does not occur. According to the present invention, a glass flip chip package structure of an image sensor mainly comprises a glass substrate, an image sensor wafer and a point coating gel. The slab substrate has a plurality of connection pads and a closed stop ring. The image sensor chip is disposed on the glass substrate, the image sensor chip has an active surface, the active surface includes a light sensing area, and a plurality of deformable convexities are disposed on the active surface Blocks to bond to the connection pads. The dot coating system is formed on the glass substrate and partially filled between the glass substrate and the image sensor wafer to cover the deformable bumps. Wherein the sealing ring is looped outside the light sensing area to block the point of the gel from flowing into the light sensing area. [Embodiment] According to a first embodiment of the present invention, a glass flip chip package structure of an image sensor is disclosed in conjunction with FIGS. 2 to 4. As shown in FIG. 2, the glass flip chip package structure 200 of the image sensor mainly comprises a glass substrate 21, an image sensor wafer 220 and a dot coating body 230. The glass substrate 21 is configured to carry the image sensor wafer 220 and provide a function of a telecommunications transfer and a light receiving path. The dot adhesive body 230 partially seals the image sensor wafer 22 and firmly bonds the image sensor wafer 220 to the glass substrate 210. In a specific structure, the glass flip chip package structure 200 may further include a flexible 1273686 circuit board 240 attached to one side of the glass substrate 2 1 . As shown in Figs. 2 and 3, the glass substrate 2 10 has a plurality of connection ports 211 and a hermetic ring 2丨2. The connection pads 2 are arranged on the periphery of the periphery of the closed retaining ring 2 12 . In addition, the glass substrate 2 1 may further have a plurality of external pads 213 electrically connected to the corresponding connection pads 211 by wires and may be arranged on the same side of the glass substrate 2 1 0 for bonding the flexible circuits. Plate 240 or other external guiding element. The material of the sealing ring 2丨2 and the connecting pads 2 11 is made of gold (au), and has the function of preventing rust, and does not need to be separately plated. The sealing ring 212 and the bottom layer of the connecting pads 211 are formed with an adhesive layer 214' to be fixed to the glass substrate 210, and are not easily peeled off without the protection of the solder resist layer. The material of the adhesive layer may be titanium_he ((丨_W). The image sensor wafer 220 is disposed on the glass substrate 210. The image sensor wafer 220 has an active surface 2 2 1 and an opposite back surface 222. The active surface 221 includes a light sensing region 223 having an image sensing component therein, such that the image sensor wafer 220 is a CMOS image sensing wafer or other sensor wafer. A plurality of deformable bumps 224 are disposed on the active surface 22 1 and are disposed on the plurality of pads 225 at the active surface 221 to be bonded to the connection pads 211. Wherein, after the deformable bumps 224 in Fig. 2 are deformed, the deformable bumps 224 in Fig. 4 are controlled to have a height of 10 to 50 μm before being deformed. After the wafer is bonded, the deformable bumps 224 are deformed by about fifty percent or more. Generally, the deformable bumps 224 are stud bumps or other soft conductive bumps formed by wire bonding, for example, a ball end of a gold wire is soldered to the solder pads 225 by using a wire bonding machine. Immediately 1273686
截斷，以形成該些可變形凸塊224。因此，能有效縮小該影 像感測器晶片220之該主動面221與該玻璃基板2ι〇之玻璃 表面之間的間隙，進而使該密閉擋環212發揮最大擋膠功 能。所以該玻璃基板21G之設計上，該㈣擋環212可與該 些連接墊211約為等高即可發揮擋膠效果。在本實施例中， 該密閉擋環212與該些連接墊211係形成於同一線路層，以 降低該密閉擋環212之成本。此外，在本實施例中，於晶片 接合之後，該玻璃基板2 1 0與該影像感測器晶片22〇之間的 間隙係介於1 0〜22微米（包含該些連接墊211之厚度）。較佳 地，該些可變形凸塊224所產生之變形使該密閉擋環212接 觸該影像感測器晶片220之該主動面22 1，以達到阻擋該點 塗膠體230之流動與固化時揮發性氣體擴散之功效。再如第 2圖所示，該些可變形凸塊224於變形後之高度係可小於該 些連接墊211之厚度，該些可變形凸塊224與對應該些連接 墊211之接合關係可為金_金鍵合（Au_Au〜“丨叫），其鍵合 方式可採用熱壓合、超音波壓合、或上述兩種方法的組合。 該點塗膠體230係形成於該玻璃基板21〇上並局部填充 在該玻璃基板210與該影像感測器晶片22〇之間，以包覆該 些可變形凸塊224。其中，該密閉擋環212係環繞於該光感 測區223之外，以阻擋該點塗膠體23〇流入該光感測區223 内。較佳地，該點塗膠體230係為具有固化收縮性之非導電 膠（Non-Conductive Paste，NCP)，故能在該點塗膠體23〇之 固化時進一步縮小該影像感測器晶片22〇與該玻璃基板2丄〇 之間的間隙，使該密閉擋環2丨2更具有隔絕氣體之功效，防 10 1273686 止點塗膠體230於固化時產生 223内。然而，在本實施例中， 明該點塗膠體230係為非導電膠（NCp) 之揮發氣體滲入該光感測區 儘管以較佳的具體實施例說 然在不同實施例的 運用中，該點塗膠體23G係可選自於高流動底部填充膠、非 流動底部填充膠與防水膠之其中之一。Truncated to form the deformable bumps 224. Therefore, the gap between the active surface 221 of the image sensor wafer 220 and the glass surface of the glass substrate 2 ι can be effectively reduced, and the sealing ring 212 can be maximized. Therefore, in the design of the glass substrate 21G, the (four) retaining ring 212 can be about the same height as the connecting pads 211 to exert a blocking effect. In this embodiment, the sealing ring 212 and the connecting pads 211 are formed on the same circuit layer to reduce the cost of the sealing ring 212. In addition, in this embodiment, after the wafer is bonded, the gap between the glass substrate 210 and the image sensor wafer 22 is 10 to 22 micrometers (including the thickness of the connection pads 211). . Preferably, the deformation caused by the deformable bumps 224 causes the sealing ring 212 to contact the active surface 22 of the image sensor wafer 220 to block the flow of the adhesive body 230 and volatilize during curing. The effect of sexual gas diffusion. As shown in FIG. 2 , the height of the deformable bumps 224 after deformation may be smaller than the thickness of the connection pads 211 , and the joint relationship between the deformable bumps 224 and the corresponding connection pads 211 may be Gold-gold bonding (Au_Au~ "squeaking"), the bonding method may be hot pressing, ultrasonic pressing, or a combination of the above two methods. The point coating body 230 is formed on the glass substrate 21 and partially Filled between the glass substrate 210 and the image sensor wafer 22A to cover the deformable bumps 224. The sealing ring 212 surrounds the light sensing region 223 to block The dot coating body 23 〇 flows into the light sensing region 223. Preferably, the dot coating body 230 is a non-conductive adhesive (Non-Conductive Paste, NCP) having a curing shrinkage property, so that the gel can be applied at this point. When the curing is performed, the gap between the image sensor wafer 22〇 and the glass substrate 2丄〇 is further reduced, so that the sealing ring 2丨2 has the function of shielding gas, and the anti-gas coating body 230 is protected against 10 1273686. Produced within 223 upon curing. However, in this embodiment, the point is The gel coat 230 is a non-conductive paste (NCp) volatilized gas that penetrates into the light sensing region. Although in a preferred embodiment, the use of different embodiments, the dot coat 23G may be selected from high flow. One of the underfill, non-flow underfill and waterproof glue.
車乂佳地"亥玻璃基板2 1 0係缺乏防銲層，而使該密閉擋 環212與該些連接塾211為表面浮凸於該玻璃基板21〇之玻 璃表面，##減少基板構件之功效。並幻吏得該些可變形凸 塊224當接合至該玻璃基板21〇之該些連接塾2ιι時能具有 較大變形#，不發生斷路與接合失敗之問題。The ruthless glass substrate 2 1 0 lacks a solder resist layer, and the sealing ring 212 and the connecting ports 211 are surface-embossed on the glass surface of the glass substrate 21, ## reduction of the substrate member The effect. It is also illusory that the deformable bumps 224 can have a large deformation when joined to the plurality of ports 2 of the glass substrate 21, and there is no problem of disconnection and joint failure.
以上所述，僅是本#明的較佳實施例而已，並非對本發 明作任何形式上的限制，雖然本發明已以較佳實施例揭露如 、r、、i而並非用以限定本發明，任何熟悉本項技術者，在不 脫離本發明之中請專利範圍内，所作的任何簡單修改、等效 性變化與修飾，皆涵蓋於本發明的技術範圍内。 【圖式簡單說明】 :1圖·習知影像感測器之玻璃覆晶封裝構造之截面示意圖。 ^依據本發明之一具體實施例，一種影像感測器之玻 ^ 璃覆晶封裝構造之截面示意圖。 第3圖·㈣本發明之—具體實施例’該影像感測器之玻璃 第4 ·覆晶封裝構造其玻璃基板之上表面示意圖。 0依據本發明之一具體實施例，該影像感測器之玻璃 覆晶封裝構造於覆晶接合時之截面示意圖。 【主要元件符號說明】 11 1273686The above description is only a preferred embodiment of the present invention, and is not intended to limit the invention in any way, and the present invention has been disclosed in the preferred embodiments, such as r, i, and is not intended to limit the invention. Any simple modifications, equivalent changes, and modifications made by those skilled in the art without departing from the scope of the invention are included in the technical scope of the present invention. [Simplified description of the drawings]: Fig. 1 is a schematic cross-sectional view of a glass flip chip package structure of a conventional image sensor. According to one embodiment of the present invention, a cross-sectional view of a glass flip chip package structure of an image sensor. Fig. 3 (4) The present invention - a specific embodiment of the glass of the image sensor. The fourth embodiment of the flip chip package structure is a schematic view of the upper surface of the glass substrate. 0 is a schematic cross-sectional view of a glass flip chip package structure of the image sensor during flip chip bonding, in accordance with an embodiment of the present invention. [Main component symbol description] 11 1273686
100影像感測器之玻璃覆晶封裝構造 110玻璃基板 111連接墊 120影像感測晶片121主動面 123電鍍金凸塊 130點塗膠體 200影像感測器之玻璃覆晶封裝構造 210玻璃基板 211連接墊 213外接墊 214黏著層 220影像感測晶片221主動面 223光感測區 224可變形凸塊 230點塗膠體 240軟性電路板 12 2光感測區 2 12密閉擋環 222背面 225銲墊100-image sensor glass-on-chip package structure 110 glass substrate 111 connection pad 120 image sensing wafer 121 active surface 123 electroplated gold bump 130 dot coating colloid 200 image sensor glass flip-chip package structure 210 glass substrate 211 connection Pad 213 external pad 214 adhesive layer 220 image sensing wafer 221 active surface 223 light sensing area 224 deformable bump 230 point coating colloid 240 flexible circuit board 12 2 light sensing area 2 12 closed ring 222 back 225 pad
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