TWI268619B - Systems and methods involving thin film transistors - Google Patents
Systems and methods involving thin film transistorsInfo
- Publication number
- TWI268619B TWI268619B TW094142110A TW94142110A TWI268619B TW I268619 B TWI268619 B TW I268619B TW 094142110 A TW094142110 A TW 094142110A TW 94142110 A TW94142110 A TW 94142110A TW I268619 B TWI268619 B TW I268619B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- systems
- thin film
- diffusion barrier
- film transistors
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 238000005984 hydrogenation reaction Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Thin Film Transistor (AREA)
Abstract
Systems and methods for enhancing performance of a hydrogenation treatment are provided. A representative system comprises a thin film transistor (TFT) comprising a substrate, a diffusion barrier layer positioned on the substrate, a pad layer positioned on the diffusion barrier layer, and a polysilicon layer positioned on the pad layer, a gate insulating layer positioned on the polysilicon layer. The thickness of the pad layer is equal to or less than the thickness of the diffusion barrier layer. The diffusion barrier layer retards hydrogen atoms from diffusing from the silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094142110A TWI268619B (en) | 2005-11-30 | 2005-11-30 | Systems and methods involving thin film transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094142110A TWI268619B (en) | 2005-11-30 | 2005-11-30 | Systems and methods involving thin film transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI268619B true TWI268619B (en) | 2006-12-11 |
| TW200721499A TW200721499A (en) | 2007-06-01 |
Family
ID=57912092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094142110A TWI268619B (en) | 2005-11-30 | 2005-11-30 | Systems and methods involving thin film transistors |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI268619B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI575293B (en) * | 2007-07-20 | 2017-03-21 | 半導體能源研究所股份有限公司 | Liquid crystal display device |
-
2005
- 2005-11-30 TW TW094142110A patent/TWI268619B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200721499A (en) | 2007-06-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |