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TWI268547B - In situ surface contaminant removal for ion implanting - Google Patents

In situ surface contaminant removal for ion implanting

Info

Publication number
TWI268547B
TWI268547B TW094128295A TW94128295A TWI268547B TW I268547 B TWI268547 B TW I268547B TW 094128295 A TW094128295 A TW 094128295A TW 94128295 A TW94128295 A TW 94128295A TW I268547 B TWI268547 B TW I268547B
Authority
TW
Taiwan
Prior art keywords
wafer
contaminants
removal
ion implanting
contaminant removal
Prior art date
Application number
TW094128295A
Other languages
English (en)
Other versions
TW200614352A (en
Inventor
walther Steve
Mehta Sandeep
Variam Naushad
Jeong Ukyo
Original Assignee
Varian Semiconductor Equipment Ass Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Ass Inc filed Critical Varian Semiconductor Equipment Ass Inc
Publication of TW200614352A publication Critical patent/TW200614352A/zh
Application granted granted Critical
Publication of TWI268547B publication Critical patent/TWI268547B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0055—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ion implantation
    • H10P30/20—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/002—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H10P30/204—
    • H10P30/21—
    • H10P52/00—
    • H10P70/12—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW094128295A 2004-08-20 2005-08-19 In situ surface contaminant removal for ion implanting TWI268547B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/922,710 US20060040499A1 (en) 2004-08-20 2004-08-20 In situ surface contaminant removal for ion implanting

Publications (2)

Publication Number Publication Date
TW200614352A TW200614352A (en) 2006-05-01
TWI268547B true TWI268547B (en) 2006-12-11

Family

ID=35910169

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094128295A TWI268547B (en) 2004-08-20 2005-08-19 In situ surface contaminant removal for ion implanting

Country Status (6)

Country Link
US (2) US20060040499A1 (zh)
JP (1) JP2008511139A (zh)
KR (1) KR20070041595A (zh)
CN (1) CN101006198A (zh)
TW (1) TWI268547B (zh)
WO (1) WO2006023637A2 (zh)

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US20060040499A1 (en) * 2004-08-20 2006-02-23 Steve Walther In situ surface contaminant removal for ion implanting
US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
KR101264687B1 (ko) * 2006-06-21 2013-05-16 엘지디스플레이 주식회사 인쇄장비, 패턴형성방법 및 이를 이용한 액정표시장치제조방법
WO2009146744A1 (de) * 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
JP5395405B2 (ja) 2008-10-27 2014-01-22 東京エレクトロン株式会社 基板洗浄方法及び装置
CN101935883B (zh) * 2010-09-10 2012-05-02 北京工业大学 超高真空离子源晶片清洗系统
US8742373B2 (en) * 2010-12-10 2014-06-03 Varian Semiconductor Equipment Associates, Inc. Method of ionization
JP5750951B2 (ja) 2011-03-14 2015-07-22 富士通株式会社 エッチングする方法及びエッチング装置
CN102644052B (zh) * 2012-05-03 2014-02-05 中国科学院光电技术研究所 一种配置紫外光照射清洁功能的真空镀膜机
CN103894377B (zh) * 2013-12-25 2017-07-21 韦小凤 一种紫外光和等离子体联合清洗器
WO2015126802A1 (en) * 2014-02-20 2015-08-27 Corning Incorporated Uv photobleaching of glass having uv-induced colorization
CN104465292B (zh) * 2014-11-28 2017-05-03 上海华力微电子有限公司 一种离子注入机的预处理方法
GB201615114D0 (en) * 2016-09-06 2016-10-19 Spts Technologies Ltd A Method and system of monitoring and controlling deformation of a wafer substrate
US10224212B2 (en) * 2017-01-27 2019-03-05 Lam Research Corporation Isotropic etching of film with atomic layer control
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN109546012B (zh) * 2018-11-23 2021-10-26 京东方科技集团股份有限公司 有机膜的刻蚀方法和显示基板显示区域电路的修补方法
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
CN112921272A (zh) * 2021-01-26 2021-06-08 西安钛斗金属制品科技有限公司 一种低摩擦TiN膜层的制备方法
CN112820813A (zh) * 2021-02-20 2021-05-18 聚灿光电科技（宿迁）有限公司 烤箱及可见光通信用led晶圆片
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
CN114496852B (zh) * 2022-01-25 2022-11-29 永耀实业(深圳)有限公司 一种用于集成电路生产线的离子注入机
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
CN117051370B (zh) * 2023-08-17 2025-10-21 中国人民解放军国防科技大学 一种激光诱导等离子体注入底材的装置

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Also Published As

Publication number Publication date
US20060040499A1 (en) 2006-02-23
TW200614352A (en) 2006-05-01
US20080185537A1 (en) 2008-08-07
WO2006023637A3 (en) 2007-03-01
CN101006198A (zh) 2007-07-25
US7544959B2 (en) 2009-06-09
WO2006023637A2 (en) 2006-03-02
KR20070041595A (ko) 2007-04-18
JP2008511139A (ja) 2008-04-10

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees