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TWI267997B - Micro-lens of image sensor - Google Patents

Micro-lens of image sensor Download PDF

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Publication number
TWI267997B
TWI267997B TW94121694A TW94121694A TWI267997B TW I267997 B TWI267997 B TW I267997B TW 94121694 A TW94121694 A TW 94121694A TW 94121694 A TW94121694 A TW 94121694A TW I267997 B TWI267997 B TW I267997B
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TW
Taiwan
Prior art keywords
light
lens
microlens
shielding layer
image sensor
Prior art date
Application number
TW94121694A
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Chinese (zh)
Other versions
TW200701494A (en
Inventor
Bo-Jung Rung
Tzu-Han Lin
Fang-Chang Liou
Original Assignee
Visera Technologies Co Ltd
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Priority to TW94121694A priority Critical patent/TWI267997B/en
Application granted granted Critical
Publication of TWI267997B publication Critical patent/TWI267997B/en
Publication of TW200701494A publication Critical patent/TW200701494A/en

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  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

This invention relates to a micro-lens for image sensor. It comprises a lens, a light-blocking layer, and a light-filtering layer. The lens possesses a bottom face. The light-blocking layer is adhered to the bottom face of the lens. It is utilized to control the amount of light that passes through the lens. The light-filtering layer is adhered to the light-blocking layer. By means of this way, using light-blocking layer, it achieves the purpose of improving optical characteristics. Eventually, the micro-lens has smaller volume and smaller area.

Description

1267997 九、發明說明: 【發明所屬之技術領域】 本發明係與影像感測器有關,特別是指一種影像感測 器之微透鏡。 5【先前技術】 、1267997 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to an image sensor, and more particularly to a microlens of an image sensor. 5 [prior art],

如第三圖所示,係為一種用於可照像手機内之CMOSAs shown in the third figure, it is a kind of CMOS used in photo-enabled mobile phones.

影像感測器(90),感測器(90)包含有一電路板(91),電路板 (91)設有一感測晶片(92),以及一環設於感測晶片(92)之承 置座(93),承置座(93)頂部設有一微透鏡(94)以及一定位座 ίο (95),定位座(95)係用以容設微透鏡(94),並且螺合於承置 座(93),承置座(93)内部另設有一濾光板(96),濾光板(96) 係位於微透鏡(94)與感測晶片(92)之間,當外界環境的光線 經由微透鏡(94)射入承置座(93)内部時,藉由濾光板(96)過 濾掉光線中之紅外線,同時使光線成像在感測晶片(92)上, 15感測晶片(92)接收到光線後產生出電氣訊號,即可用以提供 應用影像感測器(90)之電子產品使用。 然而 隹上返歇凋态(yu)之組成結構中,由於感測晶片 (92)所能接收的光線數量,僅僅藉由定位座(95)之開口大小 所控制,使得感測器(9〇)戶斤具有的光學特性較為單純,益法 變化;同時,微透鏡㈣與據光板(96)必須利用承置座㈣ 座,才能相互固定’因而造成整體影像感測器之體 ,幸又大’虽電子產品的結構朝越來越小型化之方向設計 牯,具有較大體積之感測器常會造成設 的困擾,使得電子產品的體積不易縮小。胁配使用上 4 20 1267997 【發明内容】 因此,本發明之主要目的乃在於提供_種影像感測器 之微透鏡,其可調整射入光線之數量,藉以增加影像感測 5器之光學特性。 本發明之另一目的則在於提供一種影像感測器之微透 鏡,其具有/慮光及遮光的功能,同時體積及面積皆較小, • 進而減少該影像感測器的體積。 為達成前揭目的,本發明所提供影像感測器之微透 10鏡,包含有一鏡片、一遮光層,以及一濾光層··該鏡片具 有一底面,該遮光層係貼附於該鏡片之底面,且用以控制 光線通過該鏡片的數量,該濾光層則貼附於該遮光層;藉 此,本發明所提供之微透鏡利用遮光層即可達到增加光學 特性的目的,同時體積及面積也較小。 15 • 【實施方式】 以下’茲配合圖式舉一較佳實施例,藉以對本發明之 細部結構與功效作詳細說明,其中所用各圖式之簡要說明 如下: -20 第一圓係為本發明一較佳實施例之剖視圖; 第二圖係為本發明一較佳實施例之應用示意圖;以及 第三圖係為習用影像感測器之剖視圖。 請參閲第一及第二圖所示,係為本發明一較佳實施例 所提供影像感測器之微透鏡(10),微透鏡(10)係設於一感測 5 1267997 晶片(40),感測晶片(40)為利用cSP(Chip Scale Package)方 式製成之互補性氧化金屬半導體晶片(ComplementaryAn image sensor (90), the sensor (90) includes a circuit board (91), the circuit board (91) is provided with a sensing chip (92), and a ring is disposed on the mounting base of the sensing chip (92) (93) The top of the socket (93) is provided with a microlens (94) and a positioning seat ίο (95). The positioning seat (95) is for accommodating the microlens (94) and screwed into the socket. (93), a filter plate (96) is further disposed inside the socket (93), and the filter plate (96) is located between the microlens (94) and the sensing wafer (92), when the light of the external environment passes through the microlens (94) When entering the inside of the socket (93), the infrared light in the light is filtered by the filter plate (96) while the light is imaged on the sensing wafer (92), and the sensing wafer (92) is received. An electrical signal is generated after the light is used to provide an electronic product for applying the image sensor (90). However, in the composition of the back-rest state (yu), since the amount of light that the sensing wafer (92) can receive is controlled only by the size of the opening of the positioning seat (95), the sensor (9〇) The optical characteristics of the households are relatively simple and the benefits are changed. At the same time, the microlens (4) and the light board (96) must be fixed by the mounting seat (four), which can cause the whole image sensor body, which is fortunately large. 'Although the structure of electronic products is designed to be more and more miniaturized, sensors with larger volumes often cause problems, making the size of electronic products difficult to shrink. The present invention is directed to providing a microlens of an image sensor that can adjust the amount of incident light to increase the optical characteristics of the image sensing device. . Another object of the present invention is to provide a micro-mirror of an image sensor having the function of/lighting and shading while having a small volume and area, and thereby reducing the volume of the image sensor. In order to achieve the foregoing, the micro-transmission 10 mirror of the image sensor of the present invention comprises a lens, a light shielding layer, and a filter layer. The lens has a bottom surface, and the light shielding layer is attached to the lens. The bottom surface of the lens is used to control the amount of light passing through the lens, and the filter layer is attached to the light shielding layer; thereby, the microlens provided by the invention can achieve the purpose of increasing optical characteristics by using a light shielding layer, and the volume is simultaneously And the area is also small. 15 [Embodiment] The following is a detailed description of the preferred embodiment of the present invention, and the detailed description of the structure and function of the present invention is as follows: -20 The first circular system is the present invention. A cross-sectional view of a preferred embodiment; a second view of a preferred embodiment of the present invention; and a third view of a conventional image sensor. Referring to the first and second figures, a microlens (10) of an image sensor according to a preferred embodiment of the present invention is provided. The microlens (10) is disposed on a sensing 5 1267997 wafer (40). The sensing wafer (40) is a complementary oxidized metal semiconductor wafer fabricated by a cSP (Chip Scale Package) method (Complementary)

Metal-Oxide Semiconductor,CMOS),感測晶片(40)具有一板 體(41),以及一設於板體(41)底侧之光學感應部(42),而微 5透鏡(1〇)包含有一鏡片(20)、一遮光層(30),以及一濾光層 (35) 〇 該鏡片(20)係為利用透明UV聚合材料經模製成形方 • 式(uv RePlication Pr〇cess)製成,使鏡片(20)具有一呈凸起 狀之頂面(22),以及一呈平坦狀之底面(24)。 ίο 該遮光層(30)具有一隔離區(32),以及一位於隔離區(32) 中央之透光區(34),遮光層(3〇)係利用黏接塗料貼合於鏡片 (20)之底面(24),使外界環境中之光線經由鏡片(2〇)之頂面 (22)射入後,僅能從底面(24)對應於透光區(34)之區域穿射 出去。 15 該濾光層(35)係為IR-CUT形式,濾光層(35)係利用黏 • 接塗料貼合遮光層(3〇)與感測晶片(40)之板體(41)之間,濾 光層(35)用以過濾光線中之紅外線。 經由上述結構,如第二圖所示,當微透鏡(10)設於感測 晶片(40)時,外界環境中的光線在射入鏡片(2〇)之頂面(22) 2〇後,光線經由鏡片(20)之底面(24)自遮光層(30)之透光區(34) 穿射出鏡片(20),而穿過透光區(34)之光線再穿過濾光層 (35) ’利用濾光層(35)過濾掉光線中之紅外線之後進入感測 晶片(40)之板體(41),進而成像於光學感應部(42),使光學 感應部(42)偵測到光線並產生電性變化,藉以提供電氣訊號 6 1267997 給應用感測晶片(40)之電子產品使用;微透鏡⑴利用遮光 層⑽之透光區(34)的面積尺寸來調整穿過鏡片(2〇)之光線 數量,而來自外界環境的射人級,在經過鏡片⑽以及遮 光層(30)之後可產生不_對焦距離,亦即造减測晶片 光線特性不同,相較於制之影像感測麗, 明二> 遮光層可產生多種光學特性;同時,由於本發 構之高/If件彻相互貼合之方式結合,使得整體結 =,:積與面積皆較小。 的目^所提供之微透鏡即可綱增加光學特性 骚積及面積亦較小。 1267997 【圖式簡單說明】 第一圖係本發明一較佳實施例之剖視圖; 第二圖係本發明一較佳實施例之應用示意圖;以及 第三圖係習用影像感測器之剖視圖。 【主要元件符號說明】 10微透鏡 20鏡片 22頂面 24底面 30遮光層 32隔離區 34透光區 35濾光層 40感測晶 10 41板體 42光學感應部Metal-Oxide Semiconductor (CMOS), the sensing wafer (40) has a plate body (41), and an optical sensing portion (42) disposed on the bottom side of the plate body (41), and the micro 5-lens (1) includes There is a lens (20), a light shielding layer (30), and a filter layer (35). The lens (20) is made of a transparent UV polymer material by a uv RePlication Pr〇cess. The lens (20) has a convex top surface (22) and a flat bottom surface (24). The light shielding layer (30) has an isolation region (32) and a light transmission region (34) located at the center of the isolation region (32), and the light shielding layer (3) is adhered to the lens (20) by using an adhesive coating. The bottom surface (24) allows the light in the external environment to be incident through the top surface (22) of the lens (2), and can only be penetrated from the bottom surface (24) corresponding to the light-transmitting region (34). 15 The filter layer (35) is in the form of an IR-CUT, and the filter layer (35) is adhered between the light shielding layer (3〇) and the plate body (41) of the sensing wafer (40) by an adhesive coating. The filter layer (35) is used to filter infrared rays in the light. Through the above structure, as shown in the second figure, when the microlens (10) is disposed on the sensing wafer (40), the light in the external environment is incident on the top surface (22) of the lens (2), Light passes through the light-transmissive area (34) of the light-shielding layer (30) through the bottom surface (24) of the lens (20) to exit the lens (20), and the light passing through the light-transmitting area (34) passes through the filter layer (35). 'Using the filter layer (35) to filter out the infrared rays in the light and then enter the plate body (41) of the sensing wafer (40), and then image the optical sensing portion (42), so that the optical sensing portion (42) detects the light. And generating an electrical change to provide an electrical signal 6 1267997 for use in an electronic product to which the sensing wafer (40) is applied; the microlens (1) is sized to pass through the lens using the area of the light transmissive region (34) of the light shielding layer (10) (2〇 The amount of light, and the shooting level from the external environment, after passing through the lens (10) and the light shielding layer (30) can produce a non-focus distance, that is, the light characteristics of the wafer are different, compared to the image sensing Li, Ming 2 > The light-shielding layer can produce a variety of optical properties; at the same time, due to the high/If of the hair structure, the way they fit together Together, so that the whole area of the junction = ,: product are small. The microlens provided by the target can increase the optical characteristics, and the accumulation and area are also small. 1267997 BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a cross-sectional view of a preferred embodiment of the present invention; the second drawing is a schematic view of an application of a preferred embodiment of the present invention; and the third drawing is a cross-sectional view of a conventional image sensor. [Main component symbol description] 10 microlens 20 lens 22 top surface 24 bottom surface 30 light shielding layer 32 isolation area 34 light transmission area 35 filter layer 40 sensing crystal 10 41 plate body 42 optical sensing portion

Claims (1)

1267997 十、申請專利範圍: 1·一種微透鏡,包含有: 一鏡片,該鏡片具有一底面; 一遮光層,該遮光層係貼附於該鏡片之底面,該遮光 層用以控制光線通過該鏡片的數量;以及 5 一濾光層,該濾光層係貼附於該遮光層。 2.依據申請專利範圍第丨項所述之微透鏡,其中該鏡片 係為透明UV聚合材料經模製成形方式(uv Replication Process)製成。 3·依據申請專利範圍第1項所述之微透鏡,其中該濾光 ίο層係用以過濾光線中之紅外線(IR)。 4·依據申請專利範圍第1項所述之微透鏡,其中該遮光 層具有一隔離區,以及一位於該隔離區中央之透光區,該 遮光層設於該鏡片之底面時,射入該鏡片之光線僅能自該 透光區穿射出該鏡片。 15 5·依據申請專利範圍第1項所述之微透鏡,其中該鏡片 具有一呈凸起狀之頂面,而該底面係呈平坦狀。 91267997 X. Patent Application Range: 1. A microlens comprising: a lens having a bottom surface; a light shielding layer attached to a bottom surface of the lens, the light shielding layer for controlling light to pass through a number of lenses; and a filter layer attached to the light shielding layer. 2. The microlens of claim 3, wherein the lens is made of a transparent UV polymeric material by a uv Replication process. 3. The microlens according to claim 1, wherein the filter layer is used to filter infrared rays (IR) in the light. The microlens according to claim 1, wherein the light shielding layer has an isolation region and a light transmission region located at a center of the isolation region, and the light shielding layer is disposed on the bottom surface of the lens. The light from the lens can only exit the lens from the light transmissive area. The microlens of claim 1, wherein the lens has a convex top surface and the bottom surface is flat. 9
TW94121694A 2005-06-28 2005-06-28 Micro-lens of image sensor TWI267997B (en)

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TWI267997B true TWI267997B (en) 2006-12-01
TW200701494A TW200701494A (en) 2007-01-01

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