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TWI267116B - Method of preventing photoresist poisoning of a low-dielectric-constant insulator - Google Patents

Method of preventing photoresist poisoning of a low-dielectric-constant insulator

Info

Publication number
TWI267116B
TWI267116B TW94123699A TW94123699A TWI267116B TW I267116 B TWI267116 B TW I267116B TW 94123699 A TW94123699 A TW 94123699A TW 94123699 A TW94123699 A TW 94123699A TW I267116 B TWI267116 B TW I267116B
Authority
TW
Taiwan
Prior art keywords
low
dielectric
forming
layer
constant insulator
Prior art date
Application number
TW94123699A
Other languages
Chinese (zh)
Other versions
TW200603239A (en
Inventor
Chung-Chi Ko
Syun-Ming Jang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/890,622 external-priority patent/US7172964B2/en
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW200603239A publication Critical patent/TW200603239A/en
Application granted granted Critical
Publication of TWI267116B publication Critical patent/TWI267116B/en

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  • Formation Of Insulating Films (AREA)

Abstract

A method comprises forming a low-dielectric constant (low-k) layer over a semiconductor substrate, forming an anti-reflective layer over the low-k layer, forming at least one opening in the anti-reflective layer and in the low-k layer, forming a nitrogen-free liner in the at least one opening, and forming at least one recess through the nitrogen-free liner, the anti-reflective layer, and at least partially into the low-k layer, the at least one recess is disposed over the at least one opening.
TW94123699A 2004-07-14 2005-07-13 Method of preventing photoresist poisoning of a low-dielectric-constant insulator TWI267116B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/890,622 US7172964B2 (en) 2004-06-21 2004-07-14 Method of preventing photoresist poisoning of a low-dielectric-constant insulator

Publications (2)

Publication Number Publication Date
TW200603239A TW200603239A (en) 2006-01-16
TWI267116B true TWI267116B (en) 2006-11-21

Family

ID=38191758

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94123699A TWI267116B (en) 2004-07-14 2005-07-13 Method of preventing photoresist poisoning of a low-dielectric-constant insulator

Country Status (1)

Country Link
TW (1) TWI267116B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385757B (en) * 2005-07-06 2013-02-11 瑞薩電子股份有限公司 Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385757B (en) * 2005-07-06 2013-02-11 瑞薩電子股份有限公司 Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device

Also Published As

Publication number Publication date
TW200603239A (en) 2006-01-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees