1266675 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種應用於研磨介電層之化學機械研磨 =台與控制介電層厚度之方法，尤指—種以同位方式監測 ;1電層經歷化學機械研磨製程後之厚度，並即時利用化學 屋式蝕刻方式進一步修正介電層厚度的化學機械研磨機台 與其方法。 【先前技術】 化學機械研磨（chemical mechanical polishing，CMP)技術 為目前提供超大型積體電路(VLSI)之全面性平坦化最重要 的技術之一，因此被廣泛地應用於在半導體製程例如金屬 内連線製程中。 化學機械研磨技術可用來均勻地去除一晶圓上具有不 規則表面（topographical)的目標薄膜層（target thin film)，使 晶圓在經過化學機械研磨製程處理後能夠具有一平坦且規 則（regular andplanar)的表面，以確保在後續的黃光製程中 之聚焦深度(depth of focus，DOF)。而為了控制所移除之目 標薄膜層的厚度，化學機械研磨製程終點必須被精確的偵 測並且被迅速地決定，以即時停止化學機械研磨製程。 一般而言，為了避免過度研磨，化學機械研磨製程之目 1266675 標薄膜層厚度控制主要係仰賴一設置於目標薄膜層下方之 研磨停止層（Stop layer)判斷是否應停止化學機械研磨製 程。研磨停止層的研磨速率（rem〇val rate)通常需小於其上 之目4示薄膜層，換句話說，目標研磨層被研磨的速率需大 於目標研磨層下方之研磨停止層。然而在實際應用上部分 進行化學機械研磨製程之目標薄膜層並未具有研磨停止 層，因此無法藉由研磨停止層決定化學機械研磨製程終 點，在此狀況下若產生過度研磨的狀況，則必須進行一再 沉積(re-deposition)製程，以於化學機械研磨後之目標薄膜 層上再沉積相同之薄膜層，藉使目標薄膜層之厚度達到預 定要求。 請參考第1圖，第1圖為習知控制化學機械研磨製程之 目標薄膜層厚度之方法流程圖。如第1圖所示，習知控制 化學機械研磨製程之目標薄膜層厚度之方法包含有下列步 驟： 步驟10 :開始； 步驟12 :將晶圓載入化學機械研磨機台； 步驟14 :對晶圓上之目標薄膜層進行—化學機械研磨製程； 步驟16 :將晶圓載出化學機械研磨機台； 步驟18 :侧目標薄膜層之厚度是衫於財厚度，若 是則進行步驟22,若4度大於預定厚度則進行 1266675 步驟12,若厚度小於預定厚度則進行步驟2〇; 步驟20 :進行一沉積製程，並進行步驟18 ;以及 步驟22 :結束。 請參考第2圖，帛2圖為習知控制目標薄膜層之方法的 後饋控制（feedback control)機制的示意圖。如第2圖所示， 欲進行化學機械研磨製程之晶圓I，2,3(標號u，s代表晶圓 •載入之順序)依序被載入化學機械研磨機台30,並進行一化 學機械研磨製程’當晶圓i完成化學機械研磨製程後即被 載出，並傳輸至一厚度量測儀器32量測晶圓i上之目標薄 膜層的厚度與預定厚度之差異。隨後，再將此一資訊傳回 化學機械研磨機台30並調整製程參數以修正晶圓2,3上之 目標薄膜層的厚度，*晶圓丨上之目標薄膜層的厚度若未 達預定厚度，則會再重新載人化學機械研 3()進 ·-次化學機械研磨製程，若目標_層之厚/已小於預定 $度，則晶圓！會被傳送至-沉積機台（圖未示），並進行 —再沉積製程以修正目標薄膜層之厚度。因此，習知控制 目標薄膜層之方法係利用後饋控制機制來控制目標薄膜層 之厚度。 “ /由上述可知，習知技藝係待晶圓載出化學機械研磨機台 後，再利用後饋控制調整後續晶圓之製程參數、或重覆進 行化學機械研磨製程，亦或是利用再沉積製程來控制目標 1266675 薄膜層之厚度，而上述作法將大幅增加了化學機械研磨製 程之製程時間（cycle time)與成本。 【發明内容】 本發明之目的之一在於提供一種應用於研磨介電層之 化學機械研磨機台與控制介電層厚度之方法，以節省化學 機械研磨製程之製程時間與成本。 根據本發明之申請專利範圍，係提供一種應用於研磨介 電層之化學機械研磨機台。上述化學機械研磨機台包含有 一化學機械研磨單元，用以研磨一介電層；一厚度監測單 元，用以監測該介電層於研磨後之一厚度指標；以及一厚 度修正單元，用以依據該厚度指標以蝕刻方式進一步縮減 該介電層之厚度；其中該化學機械研磨單元、該厚度監測 單元與該厚度修正單元係以同位方式（in-situ)設置。 根據本發明之申請專利範圍，另提供一種應用於化學機 械研磨製程之控制介電層厚度之方法。上述方法包含有首 先利用一化學機械研磨單元研磨一介電層，接著利用一厚 度監測單元監測已研磨完畢之該介電層，並測得一厚度指 標，隨後再利用一厚度修正單元依據該厚度指標以蝕刻方 式縮減該介電層之厚度，其中上述步驟係採同位方式進行。 1266675 為了使貴審查委員能更近一步了解本發明之特徵及技 術内容，請參閱以下有關本發明之詳細說明與附圖。然而 所附圖式僅供參考與輔助說明用，並非用來對本發明加以 限制者。 【實施方式】 請參考第3圖，第3圖為本發明一較佳實施例應用於化 _ 學機械研磨製程之控制介電層厚度之方法流程圖。由第3 圖可知，本發明應用於化學機械研磨製程之控制介電層厚 度之方法包含有下列步驟： 步驟40 :開始； 步驟42 :將晶圓載入化學機械研磨機台.； 步驟44:利用一化學機械研磨單元進行一化學機械研磨 製程，研磨晶圓上之介電層； ® 步驟46:利用一厚度監測單元監測已研磨完畢之介電層 的厚度已量測一厚度指標，並藉由厚度指標判 斷介電層之厚度是否已達預定厚度，若是則進 行步驟50，若否則進行步驟48 ; 步驟48:利用一厚度修正單元依據厚度監測單元所量測 出之厚度指標進一步縮減介電層之厚度至預 定厚度；以及 步驟50 :結束。 1266675 由上述流程步射知，本發明㈣讀層厚度之方法俜 ，化學機械研磨製程完畢後，同位量測介電層之厚度判斷 疋否達到駭厚度，接著再同位進行-厚度紅步驟將介 電層之厚度賴至敢厚度。舉例纽，介電層之初始厚 、為20千埃而預<厚度為1()千埃，則依據本發明之方 法係先進仃-化學機械研磨製料磨介電層之厚度，接著 利用-厚度監測單元以同位方式量測介電層之厚度，若介 電層之厚度經量測為1G.6千埃，則利用—厚度修正單元進 一步縮減介電層之厚度至1〇千埃。 值得說明的是本發明之厚度修正單元係利用化學座式 麵刻方式縮減介電層之厚度，而此一作法之優點在於化學 5钱刻速率雖較化學機械研磨速率緩慢，但化學澄式蝕 d製㈣Λ穩疋且易控制’因此相較於化學機械研磨，化學 =式钱刻可精確將介電層之厚度㈣在10千埃。以上述實 若化學料_速㈣每6G秒1千埃，則化學 至^刻需要36秒時間將介電層之厚度由1()6千埃縮減 埃。另外，為了更料地控制介電層之厚度，厚声 =元與厚度修正單元更可形成-封閉迴圈控制，亦： 單元可定期監測介電層之厚度並調整化學澄式餘 避免因製程變異導致介電層之厚度有所偏 舉例來說，當化學溼式飾列推y· 止化學、、m , 丁了 15秒後，可暫時停 式姓刻並再度量測介電層之厚度，若介電層之厚 1266675 度減為10.35千埃，則表示化學溼式蝕刻速率並無變化而 可繼續進行化學溼式蝕刻21秒直至介電層之厚度減為10 千埃，而若介電層之厚度結量測後有所偏差，則可計算出 化學溼式蝕刻之實際速率並調整後續製程時間，或調整化 學溼式蝕刻之製程參數以確保介電層之厚度可有效掌控。 另外，由於化學機械研磨速率較不穩定，因此為避免介電 層化學機械研磨製程中即過度研磨而使厚度小於目標厚 • 度，除上述直接將介電層之預定厚度設為目標厚度之作 法，亦可將化學機械研磨製程所欲研磨之介電層的厚度設 定為略大於預定厚度，例如將化學機械研磨製程所欲研磨 之介電層的厚度先設定為11千埃，而預定厚度則為1〇千 埃，如此一來即時化學機械研磨速率較預期為高亦不致產 生過度研磨的問題。 I 請參考第4圖，第4圖為本發明一較佳實施例應用於研 磨介電層之化學機械研磨機台之功能方塊示意圖。如第4 圖所示，本發明之化學機械研磨機台60包含有一晶圓傳輸 單元62、一化學機械研磨單元64、一厚度監測單元66， 以及一厚度修正單元68。本發明之化學機械研磨機台60 主要係應用於研磨介層層，例如氧化矽層、氮化矽層、氮 氧化矽層或多晶矽層等。晶圓傳輸單元62係用以載入、載 出晶圓，以及於化學機械研磨機台60内之各單元間傳輸晶 圓。化學機械研磨單元64為進行化學機械研磨製程之用， 11 1266675 其類型不限而可為單片式、多片式等各式化學機械研磨設 備。厚度監測單元66亦可為各式用以測量膜厚之測量設 備，例如光學式厚度測量裝置或接觸式厚度測量裝置等， 並以同位方式設置於化學機械研磨機台60之内。隨著採用 之測量技術不同，厚度監測單元66可獲得一厚度指標，例 如介電層之反射率或電阻等，並經由計算得出介電層之厚 度，藉以作為厚度修正單元68進一步縮減介電層之厚度的 • 依據。厚度修正單元68可為一化學溼式蝕刻設備，同樣以 同位方式直接設置於化學機械研磨機台60内，並依據厚度 監測單元66所提供之厚度資訊，利用化學溼式蝕刻修正介 電之厚度以達到預定厚度。另外，厚度修正單元68所使用 之蝕刻液則係視欲蝕刻之介電層材質不同，而為氫氟酸、 磷酸、硝酸或其它適合之蝕刻液。 φ 此外，本發明之化學機械研磨機台60另可包含有一清 洗單元70，用以進行一後化學機械研磨清洗(post CMP clean)製程，以去晶圓於化學機械研磨製程後所產生之微粒 污染，而值得說明的是本發明之厚度修正單元68與清洗單 元70可分別獨立設置於化學機械研磨機台60，或亦可視 需要將厚度修正單元68整合於清洗單元70之内。 由上述可知本發明控制介電層厚度之方法係將厚度監 測單元66與厚度修正單元68同位設置於化學機械研磨機 12 1266675 台60内，當厚度監測單元66量測出介電層之一-預定厚度之偏差值後，即將此資訊傳遞至^度:際，度與 68，藉以達到即時控制介電層厚度之優點正單元 控制介電層厚度之方法係採用前饋控制機制。言主’切明 圖，第5圖為本發明控制介電層厚度之方法的rf考第5 (feed forward)機制的示意圖。如第5圖所* =只控制1266675 IX. Description of the invention: [Technical field of the invention] The present invention relates to a method for chemical mechanical polishing of a polishing dielectric layer = a table and a control of the thickness of the dielectric layer, in particular, the same type of monitoring; The chemical mechanical polishing machine and its method for further correcting the thickness of the dielectric layer by the thickness of the chemical mechanical polishing process and the chemical house etching method. [Prior Art] Chemical mechanical polishing (CMP) technology is one of the most important technologies for providing comprehensive planarization of ultra-large integrated circuits (VLSI), and is therefore widely used in semiconductor processes such as metals. In the connection process. Chemical mechanical polishing techniques can be used to evenly remove a target thin film with a topographical on a wafer, allowing the wafer to have a flat and regular pattern after chemical mechanical polishing. The surface to ensure depth of focus (DOF) in subsequent yellow light processes. In order to control the thickness of the removed target film layer, the chemical mechanical polishing process endpoint must be accurately detected and quickly determined to immediately stop the CMP process. In general, in order to avoid excessive grinding, the 1266675 standard film thickness control of the chemical mechanical polishing process mainly relies on a stop layer disposed under the target film layer to determine whether the chemical mechanical polishing process should be stopped. The rem〇val rate of the polishing stop layer is usually less than the film layer shown above. In other words, the target polishing layer is ground at a rate greater than the polishing stop layer below the target polishing layer. However, in the practical application, the target film layer of the chemical mechanical polishing process does not have a polishing stop layer, so the end point of the chemical mechanical polishing process cannot be determined by the polishing stop layer. In this case, if excessive polishing occurs, it must be performed. A re-deposition process is performed to deposit the same film layer on the target film layer after chemical mechanical polishing, so that the thickness of the target film layer reaches a predetermined requirement. Please refer to Fig. 1. Fig. 1 is a flow chart showing a method for controlling the thickness of a target film layer in a chemical mechanical polishing process. As shown in FIG. 1, the conventional method for controlling the thickness of the target film layer of the chemical mechanical polishing process comprises the following steps: Step 10: Start; Step 12: Loading the wafer into the chemical mechanical polishing machine; Step 14: Crystallizing The target film layer on the circle is subjected to a chemical mechanical polishing process; Step 16: The wafer is loaded onto the chemical mechanical polishing machine; Step 18: The thickness of the side target film layer is the thickness of the shirt, and if yes, proceed to step 22, if 4 degrees If the thickness is less than the predetermined thickness, step 1226 is performed. If the thickness is less than the predetermined thickness, step 2 is performed; step 20: performing a deposition process and performing step 18; and step 22: ending. Please refer to FIG. 2, which is a schematic diagram of a feedback control mechanism of a conventional method for controlling a target film layer. As shown in Fig. 2, the wafers I, 2, and 3 (labeled u, s representing the wafer loading sequence) to be subjected to the chemical mechanical polishing process are sequentially loaded into the chemical mechanical polishing machine 30, and one is performed. The chemical mechanical polishing process is carried out after the wafer i completes the chemical mechanical polishing process, and is transferred to a thickness measuring instrument 32 to measure the difference between the thickness of the target film layer on the wafer i and the predetermined thickness. Then, the information is transmitted back to the chemical mechanical polishing machine 30 and the process parameters are adjusted to correct the thickness of the target film layer on the wafers 2, 3, and the thickness of the target film layer on the wafer is less than the predetermined thickness. , will re-load the chemical mechanical research 3 () into the - chemical mechanical polishing process, if the target _ layer thickness / has been less than a predetermined $ degrees, the wafer! It will be transferred to a deposition machine (not shown) and a redeposition process will be performed to correct the thickness of the target film layer. Therefore, the conventional method of controlling the target film layer utilizes a feedforward control mechanism to control the thickness of the target film layer. " / As can be seen from the above, the conventional technology is to wait for the wafer to carry out the chemical mechanical polishing machine, and then use the feedforward control to adjust the process parameters of the subsequent wafer, or repeat the chemical mechanical polishing process, or use the redeposition process. To control the thickness of the target 1266675 film layer, the above method will greatly increase the cycle time and cost of the chemical mechanical polishing process. SUMMARY OF THE INVENTION One object of the present invention is to provide a method for applying a dielectric layer. A chemical mechanical polishing machine and a method of controlling the thickness of the dielectric layer to save the processing time and cost of the chemical mechanical polishing process. According to the patent application scope of the present invention, a chemical mechanical polishing machine for applying a dielectric layer is provided. The chemical mechanical polishing machine comprises a chemical mechanical polishing unit for grinding a dielectric layer, a thickness monitoring unit for monitoring a thickness index of the dielectric layer after grinding, and a thickness correction unit for The thickness index further reduces the thickness of the dielectric layer by etching; wherein the chemical mechanical polishing The thickness monitoring unit and the thickness correction unit are disposed in an in-situ manner. According to the patent application scope of the present invention, a method for controlling the thickness of a dielectric layer applied to a chemical mechanical polishing process is provided. Including first grinding a dielectric layer by using a chemical mechanical polishing unit, and then monitoring the polished dielectric layer by using a thickness monitoring unit, and measuring a thickness index, and then using a thickness correction unit according to the thickness index The etching method reduces the thickness of the dielectric layer, wherein the above steps are performed in the same manner. 1266675 In order to enable the reviewing committee to further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings related to the present invention. The drawings are for illustrative purposes only and are not intended to limit the invention. [Embodiment] Please refer to FIG. 3, which is a preferred embodiment of the present invention. A flow chart of a method for controlling the thickness of a dielectric layer in a polishing process. As can be seen from FIG. 3, the present invention is applied to chemical mechanical research. The method of controlling the thickness of the dielectric layer of the grinding process comprises the following steps: Step 40: Start; Step 42: Loading the wafer into the chemical mechanical polishing machine. Step 44: Performing a chemical mechanical polishing process using a chemical mechanical polishing unit Grinding the dielectric layer on the wafer; ® Step 46: Using a thickness monitoring unit to monitor the thickness of the ground dielectric layer, measuring a thickness index, and determining whether the thickness of the dielectric layer has reached by the thickness index a predetermined thickness, if yes, proceeding to step 50, if otherwise proceeding to step 48; step 48: further reducing the thickness of the dielectric layer to a predetermined thickness by using a thickness correction unit according to the thickness index measured by the thickness monitoring unit; and step 50: ending 1266675 According to the above process step, the method of (4) reading the layer thickness of the invention, after the chemical mechanical polishing process is completed, the thickness of the in-situ measurement dielectric layer is judged to be 骇 thickness, and then the in-situ-thickness red step will be The thickness of the dielectric layer depends on the thickness. For example, the initial thickness of the dielectric layer is 20 kilo angstroms and the thickness is 1 () kilo angstroms, and the thickness of the dielectric layer is advanced by the 仃-chemical mechanical polishing method according to the method of the present invention, and then utilized. The thickness monitoring unit measures the thickness of the dielectric layer in an in-situ manner. If the thickness of the dielectric layer is measured to be 1 G.6 kilo angstroms, the thickness of the dielectric layer is further reduced to 1 〇 angstrom by the thickness correction unit. It is worth noting that the thickness correction unit of the present invention reduces the thickness of the dielectric layer by means of a chemical pedestal engraving, and the advantage of this method is that the chemical etch rate is slower than the chemical mechanical polishing rate, but the chemical etch is etched. d system (four) is stable and easy to control 'so therefore compared to chemical mechanical polishing, the chemical = type of money can accurately the thickness of the dielectric layer (four) at 10 thousand angstroms. With the above-mentioned actual chemical material _speed (four) every 1G angstroms per 6G seconds, it takes 36 seconds for the chemical layer to reduce the thickness of the dielectric layer by 1 () 6 kilo angstroms. In addition, in order to control the thickness of the dielectric layer more materially, the thick sound=element and the thickness correction unit can form a closed loop control, and the unit can periodically monitor the thickness of the dielectric layer and adjust the chemical formula to avoid the process. The variation causes the thickness of the dielectric layer to be biased. For example, when the chemical wet type pushes the y· stop chemistry, m, and after 15 seconds, the thickness of the dielectric layer can be temporarily stopped and the thickness of the dielectric layer measured. If the thickness of the dielectric layer is 1,266,675 degrees, which is reduced to 10.35 kilo angstroms, it means that the chemical wet etching rate is unchanged, and the chemical wet etching can be continued for 21 seconds until the thickness of the dielectric layer is reduced to 10 kilo angstroms. If the thickness of the electrical layer is measured and the deviation is measured, the actual rate of chemical wet etching can be calculated and the subsequent process time can be adjusted, or the process parameters of the chemical wet etching can be adjusted to ensure that the thickness of the dielectric layer can be effectively controlled. In addition, since the chemical mechanical polishing rate is relatively unstable, in order to avoid the excessive thickness of the dielectric layer during the chemical mechanical polishing process, the thickness is less than the target thickness, and the predetermined thickness of the dielectric layer is directly set as the target thickness. The thickness of the dielectric layer to be ground by the chemical mechanical polishing process may be set to be slightly larger than a predetermined thickness. For example, the thickness of the dielectric layer to be ground by the chemical mechanical polishing process is first set to 11 kilo angstroms, and the predetermined thickness is It is 1 〇 angstrom, so that the instantaneous chemical mechanical polishing rate is higher than expected without causing excessive grinding. I Please refer to FIG. 4, which is a functional block diagram of a chemical mechanical polishing machine for polishing a dielectric layer according to a preferred embodiment of the present invention. As shown in Fig. 4, the chemical mechanical polishing machine 60 of the present invention comprises a wafer transfer unit 62, a chemical mechanical polishing unit 64, a thickness monitoring unit 66, and a thickness correction unit 68. The chemical mechanical polishing machine 60 of the present invention is mainly applied to an abrasive interlayer such as a ruthenium oxide layer, a tantalum nitride layer, a ruthenium oxynitride layer or a polysilicon layer. Wafer transfer unit 62 is used to load, load, and transfer wafers between cells within chemical mechanical polishing machine 60. The chemical mechanical polishing unit 64 is used for the chemical mechanical polishing process, and the type 11 1266675 is not limited to a single-piece, multi-piece chemical mechanical polishing apparatus. The thickness monitoring unit 66 may also be a variety of measuring devices for measuring the film thickness, such as an optical thickness measuring device or a contact thickness measuring device, and disposed in the same manner in the chemical mechanical polishing machine table 60. Depending on the measurement technique employed, the thickness monitoring unit 66 can obtain a thickness index, such as the reflectivity or resistance of the dielectric layer, and calculate the thickness of the dielectric layer, thereby further reducing the dielectric as the thickness correcting unit 68. • The basis of the thickness of the layer. The thickness correction unit 68 can be a chemical wet etching apparatus, which is also directly disposed in the chemical mechanical polishing machine 60 in the same manner, and corrects the thickness of the dielectric by chemical wet etching according to the thickness information provided by the thickness monitoring unit 66. To reach a predetermined thickness. Further, the etching liquid used by the thickness correcting unit 68 is made of hydrofluoric acid, phosphoric acid, nitric acid or other suitable etching liquid depending on the material of the dielectric layer to be etched. In addition, the chemical mechanical polishing machine 60 of the present invention may further comprise a cleaning unit 70 for performing a post CMP clean process to remove particles generated by the wafer after the chemical mechanical polishing process. Contamination, it is worth noting that the thickness correction unit 68 and the cleaning unit 70 of the present invention can be independently disposed on the chemical mechanical polishing machine 60, or the thickness correction unit 68 can be integrated into the cleaning unit 70 as needed. It can be seen from the above that the method for controlling the thickness of the dielectric layer of the present invention places the thickness monitoring unit 66 and the thickness correcting unit 68 in the same position in the chemical mechanical grinder 12 1266675, and when the thickness monitoring unit 66 measures one of the dielectric layers - After the deviation of the predetermined thickness, the information is transmitted to the degree: degree, and 68, in order to achieve the advantage of instantaneous control of the thickness of the dielectric layer. The method of controlling the thickness of the dielectric layer by the positive unit adopts a feedforward control mechanism. The main figure is shown in Fig. 5, which is a schematic diagram of the rf test 5 (feed forward) mechanism of the method for controlling the thickness of the dielectric layer of the present invention. As shown in Figure 5 = only control
載入化學機械研磨機台6。後’首先即利用化學::圓2 元64進行-化學機械研磨製程。接著將晶圓72 ^研磨早 度監測單it 66量測出厚度·，以計算出介電層之=厚 度與預定厚度之差異的資訊。隨後此—資訊會先被傳送^ 厚度修正單元68, _晶圓72亦會被傳送至厚度修& 元68並依據上述資訊進行化學溼式蝕刻以修正晶\面72^Loaded into the chemical mechanical grinding machine table 6. After the first use of chemistry:: round 2 yuan 64 - chemical mechanical polishing process. Next, the wafer 72 is ground and the early monitor unit is measured to measure the thickness to calculate the difference between the thickness of the dielectric layer and the predetermined thickness. Subsequently, the information will be transmitted first, the thickness correction unit 68, and the wafer 72 will also be transferred to the thickness repair & element 68 and chemical wet etching according to the above information to correct the crystal surface 72^
之介電層的厚度。因此，本發明控制介電層厚度之方法係 採用前饋控制，同時對每一晶圓72均分別進行^度監測糸 並針對晶圓7 2之研磨狀況不同直接以同位方式利用:學 溼式蝕刻進行不同程度之厚度修正，故可大幅節省製程"'時 間與成本。 以上所述僅為本發明之較佳實施例，凡依本發明申，專 利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範"圍。 【圖式簡單說明】 第1圖為習知控制化學機械研磨製程之目標薄膜層厚度之方法流程圖。 13 1266675 第2圖為習知控制目標薄膜層之方法的後饋控制機制的示意圖。 第3圖為本發明一較佳實施例應用於化學機械研磨製程之 控制介電層厚度之方法流程圖。 第4圖為本發明一較佳實施例應用於研磨介電層之化學機 械研磨機台之功能方塊示意圖。 第5圖為本發明控制介電層厚度之方法的前饋控制機制的示意圖。 【主要元件符號說明】 10 步驟 12 步驟 14 步驟 16 步驟 18 步驟 20 步驟 22 步驟 1，2,3 晶圓 30 化學機械研磨機台 32 厚度量測儀器 40 步驟 42 步驟 44 步驟 46 步驟 48 步驟 50 步驟 60 化學機械研磨機台 62 晶圓傳輸單元 64 化學機械研磨單元 66 厚度監測單元 68 厚度修正單元 70 清洗單元 72 晶圓 14The thickness of the dielectric layer. Therefore, the method for controlling the thickness of the dielectric layer of the present invention adopts feedforward control, and each wafer 72 is separately monitored and directly used in the same manner for the grinding condition of the wafer 72: learning wet type The etching is performed with varying degrees of thickness correction, so that the process " time and cost can be greatly saved. The above is only the preferred embodiment of the present invention, and all changes and modifications made to the patent scope are intended to be encompassed by the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a method for controlling the thickness of a target film layer of a chemical mechanical polishing process. 13 1266675 Figure 2 is a schematic diagram of a feedforward control mechanism of a conventional method of controlling a target film layer. Figure 3 is a flow chart of a method for controlling the thickness of a dielectric layer applied to a chemical mechanical polishing process in accordance with a preferred embodiment of the present invention. Figure 4 is a functional block diagram of a chemical mechanical polishing machine for applying a dielectric layer in accordance with a preferred embodiment of the present invention. Figure 5 is a schematic diagram of a feedforward control mechanism of the method of controlling the thickness of a dielectric layer of the present invention. [Main component symbol description] 10 Step 12 Step 14 Step 16 Step 18 Step 20 Step 22 Step 1, 2, 3 Wafer 30 Chemical mechanical polishing machine 32 Thickness measuring instrument 40 Step 42 Step 44 Step 46 Step 48 Step 50 Step 60 chemical mechanical polishing machine 62 wafer transfer unit 64 chemical mechanical polishing unit 66 thickness monitoring unit 68 thickness correction unit 70 cleaning unit 72 wafer 14