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TWI266357B - Pattern forming method and method for manufacturing semiconductor device - Google Patents

Pattern forming method and method for manufacturing semiconductor device

Info

Publication number
TWI266357B
TWI266357B TW094108797A TW94108797A TWI266357B TW I266357 B TWI266357 B TW I266357B TW 094108797 A TW094108797 A TW 094108797A TW 94108797 A TW94108797 A TW 94108797A TW I266357 B TWI266357 B TW I266357B
Authority
TW
Taiwan
Prior art keywords
substrate
coating film
order
resist
resist film
Prior art date
Application number
TW094108797A
Other languages
English (en)
Other versions
TW200540972A (en
Inventor
Hirokazu Kato
Yasunobu Onishi
Daisuke Kawamura
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW200540972A publication Critical patent/TW200540972A/zh
Application granted granted Critical
Publication of TWI266357B publication Critical patent/TWI266357B/zh

Links

Classifications

    • H10P76/4085—
    • H10P76/2042—

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW094108797A 2004-03-24 2005-03-22 Pattern forming method and method for manufacturing semiconductor device TWI266357B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004087419A JP4016009B2 (ja) 2004-03-24 2004-03-24 パターン形成方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200540972A TW200540972A (en) 2005-12-16
TWI266357B true TWI266357B (en) 2006-11-11

Family

ID=34990362

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108797A TWI266357B (en) 2004-03-24 2005-03-22 Pattern forming method and method for manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US20050214695A1 (zh)
JP (1) JP4016009B2 (zh)
CN (1) CN1673873A (zh)
TW (1) TWI266357B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019161A (ja) * 2005-07-06 2007-01-25 Dainippon Screen Mfg Co Ltd パターン形成方法及び被膜形成装置
JP2007073684A (ja) 2005-09-06 2007-03-22 Toshiba Corp パターン形成方法
US7417469B2 (en) * 2006-11-13 2008-08-26 International Business Machines Corporation Compensation for leakage current from dynamic storage node variation by the utilization of an automatic self-adaptive keeper
US7790360B2 (en) * 2007-03-05 2010-09-07 Micron Technology, Inc. Methods of forming multiple lines
WO2012128251A1 (ja) 2011-03-24 2012-09-27 日産化学工業株式会社 ポリマー含有現像液
JP2013172082A (ja) * 2012-02-22 2013-09-02 Toshiba Corp パターン形成方法、半導体装置の製造方法および塗布装置
JP5857001B2 (ja) * 2013-07-19 2016-02-10 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理用記録媒体
KR20160045058A (ko) * 2013-08-23 2016-04-26 닛산 가가쿠 고교 가부시키 가이샤 레지스트 패턴에 도포되는 도포액 및 반전패턴의 형성방법
CN106030418B (zh) 2014-02-26 2019-10-11 日产化学工业株式会社 涂布于抗蚀剂图案的含有聚合物的涂布液
KR102533967B1 (ko) 2015-05-25 2023-05-18 닛산 가가쿠 가부시키가이샤 레지스트 패턴 도포용 조성물
US11009795B2 (en) * 2016-03-30 2021-05-18 Nissan Chemical Corporation Aqueous solution for resist pattern coating and pattern forming methods using the same
KR102628534B1 (ko) * 2016-09-13 2024-01-26 에스케이하이닉스 주식회사 반도체 기판의 처리 방법
WO2018066517A1 (ja) 2016-10-04 2018-04-12 日産化学工業株式会社 溶剤置換法を用いたレジストパターン塗布用組成物の製造方法
WO2020203852A1 (ja) 2019-03-29 2020-10-08 日産化学株式会社 レジストパターンメタル化プロセス用組成物
US12068158B2 (en) * 2021-04-23 2024-08-20 Changxin Memory Technologies, Inc. Method for fabricating semiconductor structure
CN115241047B (zh) * 2021-04-23 2024-09-13 长鑫存储技术有限公司 半导体结构的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6221562B1 (en) * 1998-11-13 2001-04-24 International Business Machines Corporation Resist image reversal by means of spun-on-glass
US6329124B1 (en) * 1999-05-26 2001-12-11 Advanced Micro Devices Method to produce high density memory cells and small spaces by using nitride spacer
JP3343341B2 (ja) * 2000-04-28 2002-11-11 ティーディーケイ株式会社 微細パターン形成方法及びそれに用いる現像／洗浄装置、及びそれを用いためっき方法、及びそれを用いた薄膜磁気ヘッドの製造方法
JP3848070B2 (ja) * 2000-09-27 2006-11-22 株式会社東芝 パターン形成方法
JP2004103926A (ja) * 2002-09-11 2004-04-02 Renesas Technology Corp レジストパターン形成方法とそれを用いた半導体装置の製造方法およびレジスト表層処理剤
KR100493029B1 (ko) * 2002-10-26 2005-06-07 삼성전자주식회사 반도체 소자의 미세 패턴 형성방법
TWI281690B (en) * 2003-05-09 2007-05-21 Toshiba Corp Pattern forming method, and manufacturing method for semiconductor using the same
US7119025B2 (en) * 2004-04-08 2006-10-10 Micron Technology, Inc. Methods of eliminating pattern collapse on photoresist patterns

Also Published As

Publication number Publication date
US20050214695A1 (en) 2005-09-29
JP4016009B2 (ja) 2007-12-05
JP2005277052A (ja) 2005-10-06
CN1673873A (zh) 2005-09-28
TW200540972A (en) 2005-12-16

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees