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TWI264967B - Plasma producing device with gas hybrid unit and method thereof - Google Patents

Plasma producing device with gas hybrid unit and method thereof Download PDF

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Publication number
TWI264967B
TWI264967B TW92137403A TW92137403A TWI264967B TW I264967 B TWI264967 B TW I264967B TW 92137403 A TW92137403 A TW 92137403A TW 92137403 A TW92137403 A TW 92137403A TW I264967 B TWI264967 B TW I264967B
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gas
plasma
pressure
mixing
ratio
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TW92137403A
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Chinese (zh)
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TW200522800A (en
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Chih-Hsin Chen
Wen-Nan Huang
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Ind Tech Res Inst
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Abstract

A device that producing plasma is constructed by a plasma-generating unit and a gas hybrid unit. The gas hybrid unit provides hybrid gas to the plasma-generating unit for generating plasma. The gas hybrid unit includes a control module and two containers that respectively store the inert gas and the source gas. The control module can regulate the quantity for the same formula of the plasma in an easy way according to the ratios of the pressure for the inert gas and the source gas to the plasma-reacting area, and the ratio of the two former pressure ratios, respectively. Thus, the plasma generated via the device is applicable to many purposes, such as disinfectant and sterilant usages.

Description

1264967 九、發明說明: 【發明所屬之技術領域】 電漿氣體混成單元,特別 漿產生裝置與方法。 ^ 本發明係關於一種電漿產生裝置及其 是指一種便於控制電漿配方及生成量之電 【先前技術】1264967 IX. Description of the invention: [Technical field to which the invention pertains] Plasma gas mixing unit, special slurry generating device and method. The present invention relates to a plasma generating apparatus and to an electric power for controlling the plasma formulation and the amount of electricity generated. [Prior Art]

的样生電漿之氣體來源通常並非單—成分…般需要大比例 Ϊ體與少量的源氣體(S〇UrCe gas)作混合。然而,其混合比 4雷ΐ為定的配方’於大量使科以—次混合好的配方氣體產 4 士ϋ亚"、、太大的困難,可是如若有多次重新混合的需求及電禁 ,成1有所差異時,隨著氣體消耗而壓力遞次變動的情形下,要 =次,合作業都能獲得相同配方比例之混合氣體,並獲得所需特定 成I的電漿,在現存電漿生成相關技術與方法上,未 與討論。 q q >冊从The gas source of the sample-like plasma is usually not a single-component...the large proportion of the gas is mixed with a small amount of source gas (S〇UrCe gas). However, the mixture is more stable than the 4 Thunder formula, which is too difficult for a large amount of formula gas to be mixed with a good formula, but if there are multiple remixing needs and electricity Forbidden, when there is a difference in 1 and the pressure changes with the gas consumption, the cooperation industry can obtain the mixed gas of the same formula ratio and obtain the specific plasma of the desired I. The related technologies and methods for existing plasma generation are not discussed. q q > book from

電漿之用途廣泛地於磁控能源、材料應用、環保應用、太空天 文ϋί、加速态之反應機制、慣性能源等許多先進研究領域和課題, 扮演著核心技術角色之一,也對諸多技術領域產生了應用與推進升 力,也催化了技術之能量;近年以來,將電漿原理所促使之 氣恶氧化反應進行,而應用於去除氣態污染物已陸續研究發展中; 諸如電子束阳咖0!^6&111)法、電暈放電((::麵仙1^咖职)法、微波 (Microwave)法、尚頻波(Racji〇 Frequency,RF)法、介電質放電 (Dielectric Barrier Discharge,DBD)法等,皆已被證實具有一定的處理 效果。其中,微波法及高頻波電漿產生的操作較適用在低壓之條件, 其於空氣污染物去除的應用上便受到限制。但電子束法、電暈放電 法及介電質放電法,在一般室溫、常壓下即可能進行有效放電,是 現今非熱電漿(Non_Thermal Plasmas,NTPs)去除氣態污染物的研究 主流;此外,熱電漿(Thermal Plasmas)生成方式如電漿火炬(piasma Torch)及電漿玻璃法(piasmas vitrification)等,亦可在半導體廢氣消毒 1264967 處理上,具有功效。 審究中華民國專利, 用的作法,雖已有所牿定姆从水產生並能於消毒殺菌之技術搭配應 成之機制上,較為缺乏·和設計成果呈現,但於電漿生 利用蒸氣來提供溫調機構設計上之濾淨功能,再 用電燈高壓端之動作來自力®日月,公告號:524709) ’·以應 一啊。聰圍内= 里,運用掃描線圈 學或化工科_之^=定電子的分布方向,作為適於醫 號:4刪),·而對^殺清潔之密閉式消毒(發明,公告 【發明内容】 需之決問題’在於習用技術中對於生成電漿所 罐嫩方比例,《 單兀疋用以提供混合氣體,供電漿生成單元產生電漿,而具有 到電漿產生裝置之功能;電漿氣體混成單元包含第一、第2容哭盘 =空制模組,第-、第二容II分別儲放—惰性氣體與—源氣體,^ 例 制,組則控制雜氣體與I氣體之混合;其中,控麵組係根據^ 性氣體壓力與電漿反應區壓力之比值、源氣體壓力與電漿反應區芦 力之比值,以及該二比值間之比例關係,來控制惰性氣體與源 混合前之壓力,進而控制電漿產生單元之氣體生成量及配方^ 再進-步闡明與歸結,本發明即提供了電I氣體混成控制方 法,其特徵在於根據相關電漿生成需求氣體壓力與反應環境壓力之 比值關係,以及比值間之比例關係,以控制惰性氣體與源氣體混合 1264967 •ii ’ ίί控制電漿生成單元之電襞氣體生成之操作變數。 於任意二種氣體之混成作業。 ^工制方法,亦適用 者之ίϊϊϊΐ之功效’在於以惰性氣體、源氣體與電聚反雇區- ίΐΐ: f匕值及比例關係,去控制電漿氣體生成ϊ,並;二j 水生成早兀產生電漿,可作為消毒殺菌之用。 猎電 【實施方式】 石月參閱「第1圖,本發明第一較佳f 漿氣體混成裝置100,主要;3 一者,係為一電 組130所構成。 要匕糾^110、弟二容器120與控制模 中則氣體(例如氦氣)’而第二容㈣ 可藉由-電二此 120分別連接第—暫存室第 ^^㈣與苐二谷器 :室:^=『此项室7門=第2開 成早兀200 ’並利用控制閥15〇 曰田γ达至電水生 容器⑽、第—暫存室llm第;容謂與第二 123、壓力計114盥124,電將 —~刀別设有壓力計113與 反應區(圖未示)亦設有成電漿氣體之電漿 值傳送,麵組13〇,以達醉確的自输各位麵力數 與第制第—暫存室U1 體的混合時點;且第-暫存室lu3閥控制源氣體與惰性氣 ⑴、】22必須予以關閉,亦Him通時,屢力間 氣與混合不可同時進行。 暫存至111與弟二暫存室121之進 本發明所提纖馳峨謝綱_氣體與源 1264967 制,來控制或調整_氣體生成量及配方比例,而且 二興為惰性氣體壓力丫與1漿反應區壓力w之比值y/w,及源 反應區壓力w之比值B/w,而非特定之壓力比值; v/w^/J7K氣體配方之惰性氣體與源氣體的混合比例,兩者之 ⑱、以=__輕定’例如Y/w=5(B/w)。當源氣體或惰性 至第—暫存室111與第二暫存室121之後,第—容器110 之壓力,會隨著所剩惰性氣體或源氣體之減少逐漸下 Ϊ ’ f!1定的第—暫存室111與第二暫存室121壓力也會逐次降 σ基於壓力比值之比例關係以及電漿反應區之壓力,可運算出每 ^操作之目標壓力值,藉由惰性氣體與源氣體之壓力控制,ί控制 或调整電漿氣體生成量。 工 本發,以壓力比例控制混合電漿氣體體積及配方比例之控制方 式’可以藉由波以耳定律(Boyle,sLaw)予以驗證。 工 依據波以耳定律(衡定狀態下,溫度一定,氣體之壓力與 反比),當源氣體之第二暫存室121之壓力為B大氣壓、容量/為A井, 一暫存室111為γ大氣壓’x升,而電漿氣體集成處 上冤水生成早兀200之電漿反應區,圖未示)之壓力為%大氣壓, ^理的忽略通管之體積,與氣體混合後之溫度變化(當然,溫控環境 可=強化該設定之合理性),則混合後之氣體體積Z升可經下列^ (1) (2) />.以壓力與體積之乘積」=09抓7^7^11 + ^4.5 = (1 + 乂 + 2)| Χ :第一暫存室111容量 Υ:第一暫存室111之惰性氣體壓力 A :第二暫存室121容量 B :第二暫存室121之源氣體壓力 W:電漿反應區之壓力 1264967 z:電漿反應區之混合氣體體積 承力第一、第二暫存室U1、121之容量X及A為固定, 二:、此合氣體體積Z之決定變數,只要控制第-、第二暫存室 卜界壓力(電聚反應區)之比值,亦即對Y/W及B/W進行 宏^入P此控制混合氣體的體積Z,進而決定電漿生成量;欲得到特 卿定比例關係)與特定生成量2的電裝, Ί且僅4握軌體、惰性氣體與電漿反應區三者之壓力丫、 L 至2c _混合氣體體積z (縱 一 H暫存至M力與電漿反應區壓力比值y/w (右侧橫軸)、第 (第左;,軸)其雜關聯之數值 R卜R2二二d Γ W ’ 2A至2C圖即分別顯示在 曰: 5R2㈣形下’藉由壓力之調整將能使電聚 ίΪΐί'Ι ;; ; * 2〇 而能;^用,中、:注:tR1、與R2之比例和生成氣體體積Z之關係, ^每生,5需求之電漿生成量和配方間之比例變化。 田二、、,貝務上第一、第二暫存室並非絕對 , 雜雷將嘴主壯叙電㈣毒裝置採用封閉式消毒的方式, 非熱電漿氣體輸送至特定位置,其應用 liii;消t 藉由吹送出的電浆氣體對待消毒物如 雪將包隔間310與第二隔間32〇,第一隔間310中設有 電ΐιι ίLD、電聚氣體混成單元312與風扇313。電漿生成單 、氣體= 介帝所#電子束法及電萆放電法亦適用於本發明。 電l g大,;I電放電之動作是漸由絕緣狀態 1264967 (insulation)至崩潰(breakdown),終而發生放電現象;而電漿生成前之 氣體的狀態亦會漸次產生變化,而使反應之氣體激化為第四態之電 漿能態。 歸結整理放電動作相關之階段說明如下: (1)在供給電壓為零之狀態,縱有電子擴散與游離輕射線作用, 但極為些微,其產生的電流極低,無法使通入的反應氣體進行電漿 生成反應。 (2)供給電壓逐漸增加,反應氣體區域中的電子量也會隨之增 加’在未達到反應氣體所需之崩潰電壓(brakdown v〇itage)之前,兩 才f間的電場無法提供電子足夠的能量(加速能量)與氣體分子進行非 彈性碰4里(inelastic collisions),而電子數目便未能大量增加,故反應 區域仍可視為絕緣狀態、無放電現象發生。 (3)供給電壓繼續提高,持續至電場足以致使區域内的電子與氣 體分子進行雜性碰撞時,f子將有大量增加之現象(離子化的非彈 性碰撞所肇生)’當f子密度高於環境條件臨界辦,在祕之間便 可觀見微絲狀放電(micjO_diseharge)、光閃(lumi_)的現象,此時 之電流值讀升無加電_提高成高_之轉換,即電流值大幅 增加,放電現象展現,而電漿氣體便開始生成。 ί同:漿單元312包含前述的第一、第二容器與控制模組 例所述方式,藉由控制惰性氣體、源氣體分別與 電水反應區£力之比值,決定雜電漿生成量。風扇313產生氣 亚將產生之非熱電漿送往第二隔間32〇。 、'脸中具有—感應器321,用以感應人手或待消毒物, 至電漿混成單元312之控制模組,而啟動電漿生 iii 外更設置—調節風扇322,可用以調節出風時 關補充的是’本發明之電漿氣體混成單元,並不限於 體之调配,任'一兩個第 <一翁㈣纺?哲 ^ ^ ’ 根據第-氣體壓力與外界(指心、、曰入二㈣才工制— P介W日礼體此合處,例如第丨圖中氣閥15〇^ 10 1264967 側)Μ力之比值、弟一氣體壓力與外界壓力之比值,以及此二比值 間之比例關係,即能控制第一氣體與第二氣體混合前之壓力,便進 而控制其混合氣體體積及配方比例。 再者,本發明除了裝置上之貢獻外,亦提供電漿氣體(或者任 意兩氣體)之混成控制方法,其特點即為根據惰性氣體(或第一氣 體)壓力與電漿反應區(或氣體混合處)壓力之比值、源氣體(或 第二氣體)壓力與電漿反應區(或氣體混合處)壓力之比值,以及 該二比值間之比例關係,來控制惰性氣體(或第一氣體)與源氣體 (或第二氣體)混合前之壓力,進而控制電漿產生單元之電漿氣體 生成量(或混合氣體體積)及配方比例。 =上所述者,僅為本發明較佳之實施例而已,並非用以限定本 發明實施之範圍,熟習此技藝者經本發明之揭露後,所據以修改替 換者’均屬基於本發明技術思想之衍生創作。 因此,在不脫離本發明之技術思想範圍下所作之均等變化與修 飾,皆應涵蓋於本發明之申請專利範圍内。 … 【圖式簡單說明】 ^ 1圖係本發明第一較佳實施例之實施示意圖; 第2Α至2D_林發明各權力比健辭,與混合氣體體積之關 係圖,及 第3圖係本發明第二較佳實施例之實施示意圖。 【主要元件符號說明】 電漿氣體混成裝置 100 第一容器 110 第一暫存室 111 第一閥門 112 第一壓力計組 113 、 114 第二容器 120 1264967 第二暫存室 121 閥門 122 第二壓力計組 123 、 124 控制模組 130 氣閥 140 控制閥 150 電漿生成單元 200 壓力計 210 非熱電漿消毒裝置 300 第一隔間 310 電漿生成單元 311 電漿氣體混成單元 312 風扇 313 第二隔間 320 感應器 321 調節風扇 322The use of plasma is widely used in many advanced research fields and topics such as magnetron energy, materials application, environmental protection applications, space astronomy, acceleration mechanism, inertial energy, etc., and plays a core role in many technical fields. The application and propulsion of lift have also catalyzed the energy of technology; in recent years, the gas oxidation reaction promoted by the plasma principle has been carried out, and the application to remove gaseous pollutants has been continuously researched and developed; such as electron beam yang coffee 0! ^6&111) method, corona discharge ((::面仙1^咖职) method, microwave (Microwave) method, Racji〇Frequency (RF) method, Dielectric Barrier Discharge, The DBD) method has been proven to have a certain processing effect. Among them, the microwave method and the high-frequency plasma generated operation are more suitable for the low pressure condition, which is limited in the application of air pollutant removal. , corona discharge method and dielectric discharge method, it is possible to carry out effective discharge under normal room temperature and normal pressure, which is the removal of gaseous pollution by non-thermal plasmas (NTPs). In addition, the production of Thermal Plasmas, such as the plasma torch (piasma Torch) and the plasma glass method (piasmas vitrification), can also be used in the treatment of semiconductor exhaust gas disinfection 1264967. The method of using the Republic of China patents, although there is a mechanism for the combination of technology that can be produced from water and can be disinfected and sterilized, is relatively lacking and design results, but the use of steam in plasma to provide temperature regulation The filtering function of the mechanism design, and then the action of the high-voltage end of the electric light comes from the force of the day and the moon, the announcement number: 524709) '· should be one. Congwei inside = inside, using scanning coils or chemical science _ ^ ^ = the direction of the distribution of electrons, as suitable for medical number: 4 delete), · and ^ kill clean closed disinfection (invention, announcement [invention content 】 The problem of need is 'the ratio of the tenderness of the pot for the generation of plasma in the conventional technology. The single raft is used to provide the mixed gas, the power supply slurry generating unit produces the plasma, and has the function of the plasma generating device; the plasma The gas mixing unit comprises a first and a second crying disc = an empty module, the first and second volumes II respectively store the inert gas and the source gas, and the group controls the mixing of the heterogas and the I gas. Wherein, the control surface group controls the mixing of the inert gas and the source according to the ratio of the gas pressure to the pressure of the plasma reaction zone, the ratio of the source gas pressure to the resilience of the plasma reaction zone, and the proportional relationship between the two ratios. The former pressure, and thus the gas generation amount and the formulation of the plasma generating unit, further clarify and conclude, the present invention provides an electric I gas mixing control method, which is characterized in that the gas pressure and reaction are generated according to the relevant plasma generation demand. ring The relationship between the ratio of the ambient pressure and the ratio between the ratios to control the mixing of the inert gas with the source gas. 1264967 • ii ' ίί Control the operating variables of the electric gas generation of the plasma generating unit. Mixing of any two gases. ^ The technical method, as well as the effect of the application, is to control the generation of plasma gas by inert gas, source gas and electro-aggregation area - 匕 : f匕 value and proportional relationship;兀 电 兀 兀 电 电 。 。 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 石 石 石 石130. It is necessary to correct the ^110, the second container 120 and the control module in the gas (such as helium) and the second capacity (four) can be connected to the first temporary storage room by the second - 120 (4) With the 苐二谷器: Room: ^= "This room 7 doors = the second opening into the early 200" and using the control valve 15 Putian γ to reach the electric aquatic container (10), the first temporary storage room llm; With the second 123, the pressure gauge 114盥124, the electric will be equipped with a pressure gauge 113 The reaction zone (not shown) is also provided with the plasma value of the plasma gas, and the quilt is 13 〇, so as to achieve the mixing time of the number of the face forces of the self-transmission and the U1 body of the first-stage temporary storage chamber; And the first-stage storage chamber lu3 valve controls the source gas and the inert gas (1), 22 must be closed, and when the Him is on, the intermittent gas and the mixture cannot be simultaneously performed. Temporarily stored in the 111 and the second temporary storage room 121 The invention provides a method for controlling or adjusting the amount of gas generated and the proportion of the formula, and the ratio of the inert gas pressure 丫 to the pressure w of the slurry reaction zone y/w, and The ratio of the source reaction zone pressure w is B/w, not the specific pressure ratio; the mixing ratio of the inert gas to the source gas of the v/w^/J7K gas formulation, 18 of which is lightly determined by =__' /w=5(B/w). After the source gas or inert to the first temporary storage chamber 111 and the second temporary storage chamber 121, the pressure of the first container 110 gradually decreases with the decrease of the remaining inert gas or source gas. - the pressure of the temporary storage chamber 111 and the second temporary storage chamber 121 are also gradually decreased by σ based on the proportional relationship of the pressure ratio and the pressure of the plasma reaction zone, and the target pressure value per operation can be calculated by the inert gas and the source gas. The pressure control, ί controls or adjusts the amount of plasma gas generated. The method of controlling the volume of the mixed plasma gas and the proportion of the formulation by the pressure ratio can be verified by Boyle, sLaw. According to the wave-to-ear law (the temperature is constant, the pressure of the gas is inversely proportional), when the pressure of the second temporary storage chamber 121 of the source gas is B atmospheric pressure, the capacity is A well, and the temporary storage chamber 111 is γ atmospheric pressure 'x liter, and the plasma gas is integrated into the plasma reaction zone of the early 兀 200, the pressure of the graph is not shown), the pressure is % atmospheric pressure, the volume of the tube is ignored, and the temperature after mixing with the gas Change (of course, the temperature control environment can = enhance the rationality of the setting), then the volume of the gas after mixing Z liter can be obtained by the following ^ (1) (2) />. The product of pressure and volume" = 09 scratch 7 ^7^11 + ^4.5 = (1 + 乂+ 2)| Χ : First temporary storage chamber 111 capacity Υ: inert gas pressure A of the first temporary storage chamber 111: second temporary storage chamber 121 capacity B: second The source gas pressure of the temporary storage chamber 121: the pressure of the plasma reaction zone is 1264967 z: the mixed gas volume bearing force of the plasma reaction zone is the first and the second temporary storage chambers U1, 121, and the capacities X and A are fixed, two: The determining variable of the combined gas volume Z, as long as the ratio of the first and second temporary storage chamber pressures (electropolymerization reaction zone) is controlled, that is, the macro/input of Y/W and B/W is performed. P This controls the volume Z of the mixed gas, which in turn determines the amount of plasma generated; the ratio of the specific amount of the mixture is required to be obtained, and the specific amount of electricity is 2, and only 4 of the rail body, the inert gas and the plasma reaction zone are included. Pressure 丫, L to 2c _ mixed gas volume z (longitudinal H is temporarily stored to the M force and plasma reaction zone pressure ratio y/w (right horizontal axis), first (left;, axis) The value R R R2 22 d Γ W ' 2A to 2C are respectively displayed in the 曰: 5R2 (four) shape 'by the adjustment of the pressure will be able to make electricity Ϊΐ Ι Ι ; ; ; ; * 2 〇 〇 ; ; ^ ^ , : Note: the relationship between the ratio of tR1 and R2 and the volume Z of the generated gas, ^ the ratio of the amount of plasma generated per generation, the demand for 5, and the ratio between the formulations. Tian Er, ,, Bei, first and second The storage room is not absolute, the mine will use the closed disinfection method, and the non-thermal plasma gas is transported to a specific location, and its application liii; eliminates the use of plasma gas to treat the disinfectant. The snow compartment 101 and the second compartment 32 are provided, and the first compartment 310 is provided with an electric ΐ ι LD, an electropolymerized gas mixing unit 312 and a fan 31. 3. Plasma generation sheet, gas = Jiedi Institute #electron beam method and electric discharge method are also applicable to the present invention. The electric lg is large; the action of the I electric discharge is gradually from the insulation state 1264967 (insulation) to the collapse (breakdown) ), the discharge phenomenon occurs at the end; and the state of the gas before the plasma generation also gradually changes, and the gas of the reaction is intensified into the plasma state of the fourth state. The stages related to the summary discharge operation are as follows: 1) In the state where the supply voltage is zero, the electron diffusion and the free light ray act, but they are extremely small, and the generated current is extremely low, so that the reaction gas to be passed cannot be subjected to the plasma generation reaction. (2) The supply voltage is gradually increased, and the amount of electrons in the reaction gas region is also increased. 'Before the breakdown voltage (brakdown v〇itage) required for the reaction gas is reached, the electric field between the two is not sufficient to provide electrons. The energy (accelerated energy) and the gas molecules undergo inelastic collisions, and the number of electrons cannot be increased in a large amount, so the reaction area can still be regarded as an insulating state and no discharge phenomenon occurs. (3) The supply voltage continues to increase until the electric field is sufficient to cause the electrons in the region to collide with the gas molecules, and the f-sub-subject will increase a lot (the ionized inelastic collision occurs) 'when the f-sub-density Above the threshold of environmental conditions, you can see the phenomenon of microfilament discharge (micjO_diseharge) and light flash (lumi_) between the secrets. At this time, the current value is read up without power-on _ increase to high _ conversion, that is, current The value increases dramatically, the discharge phenomenon appears, and the plasma gas begins to form.浆: The slurry unit 312 includes the first and second containers and the control module as described above, and determines the amount of hybrid plasma generated by controlling the ratio of the inert gas and the source gas to the electrolysis reaction zone. The fan 313 generates a non-thermal plasma generated by the gas to the second compartment 32. The sensor has a sensor 321 for sensing a human hand or a disinfectant to the control module of the plasma mixing unit 312, and a plasma generator iii is further provided to adjust the fan 322, which can be used to adjust the wind. What is added is that the 'plasma gas mixing unit of the present invention is not limited to the blending of the body, and is 'one or two' < one Weng (four) spinning? Zhe ^ ^ ' According to the first - gas pressure and the outside world (referring to the heart, into the second (four) only work system - P-W-day ceremony body, such as the gas valve 15〇^ 10 1264967 side in the figure) The ratio, the ratio of the gas pressure to the external pressure, and the proportional relationship between the two ratios, that is, the pressure before mixing the first gas and the second gas, thereby controlling the volume of the mixed gas and the proportion of the formulation. Furthermore, in addition to the contribution of the device, the present invention also provides a method for controlling the mixing of plasma gas (or any two gases), which is characterized by an inert gas (or first gas) pressure and a plasma reaction zone (or gas). The mixing ratio), the ratio of the pressure of the source gas (or the second gas) to the pressure of the plasma reaction zone (or gas mixture), and the ratio between the two ratios to control the inert gas (or the first gas) The pressure before mixing with the source gas (or the second gas), thereby controlling the plasma gas generation amount (or mixed gas volume) of the plasma generation unit and the formulation ratio. The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Those skilled in the art after the disclosure of the present invention, based on the modification of the present invention, are based on the technical idea of the present invention. Derivative creation. Therefore, the equivalent changes and modifications made without departing from the scope of the invention may be covered by the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [1] Fig. 1 is a schematic view showing the implementation of the first preferred embodiment of the present invention; the second to 2D_lin inventions each of the power ratios, the relationship with the volume of the mixed gas, and the third figure A schematic diagram of the implementation of the second preferred embodiment of the invention. [Main component symbol description] Plasma gas mixing device 100 First container 110 First temporary storage chamber 111 First valve 112 First pressure gauge group 113, 114 Second container 120 1264967 Second temporary storage chamber 121 Valve 122 Second pressure Meter group 123, 124 Control module 130 Air valve 140 Control valve 150 Plasma generating unit 200 Pressure gauge 210 Non-thermostatic slurry disinfection device 300 First compartment 310 Plasma generating unit 311 Plasma gas mixing unit 312 Fan 313 Second partition Between 320 sensors 321 to adjust the fan 322

1212

Claims (1)

1264967 十、申請專利範圍: 1· 一種電漿產生裝置,包含·· #一電漿氣體混成單元,包含一第一容器、一第二容器與一控 ,模f,其中該第一容器與該第二容器係分別儲放一惰性氣體與 一源氣體’該控制模組則控制該惰性氣體與該源氣體之混合;及 一電漿生成單元,具有一電漿反應區,將該惰性氣體與該源 氣體生成電漿氣體; 具中 孩彳工制模組係根據該惰性氣體壓力與該電漿反應區屬 力之比值、該源氣體壓力與該電漿反應區壓力之比值,以及該二1264967 X. Patent application scope: 1. A plasma generating device, comprising: a plasma gas mixing unit, comprising a first container, a second container and a control, a mold f, wherein the first container and the first container The second container stores an inert gas and a source gas respectively; the control module controls mixing of the inert gas and the source gas; and a plasma generating unit has a plasma reaction zone, and the inert gas is The source gas generates a plasma gas; the module with the middle child is based on the ratio of the pressure of the inert gas to the force of the reaction zone of the plasma, the ratio of the pressure of the source gas to the pressure of the reaction zone of the plasma, and the second 比值間之比例關係,控制該惰性氣體與該源氣體混合前之壓力, ^而控制該生成單元之«氣體生成量及配方比例,其中智 2. m體I力將γ與該電裝反舰壓力w之比值Y/w,及該源制 反力B與该電漿反應區壓力w之比值B/w,Y/w= w 項所述之電漿產生裝置,其中該第一容器儀 ^暫存至,该苐二容器則連接一第二暫存室,且該箄玄 ίίίί暫存室間分別設有—閥門’以控制該惰性氣體與該源氣 3·如申請專利範圍第2項所述之電漿 間具有通管相互通連,並設有二The proportional relationship between the ratios, controlling the pressure of the inert gas before mixing with the source gas, and controlling the amount of gas generated and the proportion of the formulation of the generating unit, wherein the wisdom 2. m body I force γ and the electric equipment anti-ship The ratio Y/w of the pressure w, and the ratio of the source reaction force B to the plasma reaction zone pressure w/w, Y/w=w, the plasma generating device, wherein the first container device ^ Temporarily stored, the second container is connected to a second temporary storage room, and a valve is respectively disposed between the temporary storage chambers to control the inert gas and the source gas. 3. For example, the second item of the patent application scope The plasma has a through pipe connected to each other and is provided with two 述找置,糾料-暫存室 模組。 刀別又有一勤計,將無力數值傳送至該控制 5·如申請專利範圍第1項所述之電漿 元係藉由熱電漿生成其中該電漿生成單 聚玻璃法,而非熱電漿生成方漿火炬法或電 法、電暈放電法。 J馮電貝放電法,或電子束 6.如申凊專利範圍第1項所述 玉水產生表置’其中更包含-風 13 1264967 8. 9· 10, 扇,用以產生氣流將該電漿生成單 定位置。 元提供之電漿氣體輸送至 一特 ^申請專利制第〗項所述之電漿產生裝置,其中更包含 ί申用手ί制毒物,啟誠襲該非熱_肖毒裝^該第一隔間係設置該電漿生成單元蝴漿 i該第二隔間則設有一調節風扇,以調整 請範圍第1項所述之1漿產生裝置,其巾該第一容器與 =弟-谷⑤及該電漿生成單元之電漿反應區分別設有一壓力、 计,將其壓力數值傳送至該控制模組。 種電裝氣體混成單元,包含: 一第一容器,儲放一惰性氣體; 一第二容器,儲放一源氣體;及Said to find, correcting - temporary room module. The knife has another diligent measure, and transmits the powerless value to the control. 5. The plasma element described in item 1 of the patent application is generated by pyroelectric plasma in which the plasma is formed into a monodisperse glass method instead of pyroelectric generation. Square pulp torch method or electric method, corona discharge method. J Feng electric shell discharge method, or electron beam 6. The jade water production table described in the first item of the application scope of the application, which contains - wind 13 1264967 8. 9· 10, fan, used to generate airflow to the plasma Generate a single location. The plasma gas supplied by Yuan is transported to the plasma generating device described in the special patent application system, which further includes the toxic substance made by the hand, and the qi is attacked by the non-heat _ xiao poisoning ^ the first partition The plasma generating unit is provided with a regulating fan. The second compartment is provided with an adjusting fan to adjust the first pulp generating device according to the first item of the scope, and the first container and the younger-valley 5 and The plasma reaction zone of the plasma generating unit is respectively provided with a pressure and a meter, and the pressure value thereof is transmitted to the control module. The electric gas mixing unit comprises: a first container for storing an inert gas; and a second container for storing a source gas; ^ ^控制模組,控制該惰性氣體與該源氣體之混合,以提供混 合後氣體至-電漿生成單元之電漿反應區巾,生成電漿氣體; 其中,該控制模組係根據該惰性氣體壓力與該電漿反應區壓 力之比值、該源氣體壓力與該電漿反應區壓力之比值,以及該二 比值間之比例關係,控制該惰性氣體與該源氣體混合前之壓力, 進而,制該電漿生成單元之電漿氣體生成量及配方比例,其中該 ,性氣體壓力Y與該電漿反應區壓力w之比值Y/w,及該源氣體 墨力B與該電漿反應區壓力W之比值B/W,Y/W=5(B/W)。 11· ^申請專利範圍第1〇項所述之電漿氣體混成單元,其中該第一容 ,係連接一第一暫存室,該第二容器則連接一第二暫存室,且該 等容器與該等暫存室間分別設有一閥門,以控制該惰性氣體與該 源氣體之釋放。^ ^ control module, controlling the mixing of the inert gas and the source gas to provide a plasma reaction zone of the mixed gas to the plasma generating unit to generate a plasma gas; wherein the control module is based on the inertia a ratio of a gas pressure to a pressure of the plasma reaction zone, a ratio of the source gas pressure to a pressure of the plasma reaction zone, and a ratio between the two ratios, controlling a pressure before mixing the inert gas with the source gas, and further The plasma gas generating amount and the formula ratio of the plasma generating unit, wherein the ratio Y/w of the gas pressure Y to the plasma reaction zone pressure w, and the source gas ink force B and the plasma reaction zone The ratio of the pressure W is B/W, and Y/W = 5 (B/W). 11. The plasma gas mixing unit of claim 1, wherein the first volume is connected to a first temporary storage chamber, and the second container is connected to a second temporary storage chamber, and the second container is connected to a second temporary storage chamber. A valve is disposed between the container and the temporary storage chambers to control the release of the inert gas and the source gas. 12·如申請專利範圍第11項所述之電漿氣體混成單元,其中該第一暫 存室與該第二暫存室間具有通管相互通連,並設有一氣閥透過該 控制模組控制其混合。 14 1264967 13.=,專利範圍第_所述之電漿氣體混成單元, 控制模組。 麼力什,將其壓力數值傳送至該 Μ. = 5月專利I已圍第10項所述之電 容器及該電裝生成單元之電裝反應區分^ 力计,將其壓力數值傳送至該控制模組。 I 15.=請專利範圍第1G項所述之電漿氣體混成單元,且中 成:T係藉由熱魏生成方式或非熱電漿生成方式,:將 體=將其中熱電漿生成方式可為電浆:法 放^熱電—式則可為介電質放電法,或電 16· —種氣體混成單元,包含: 一第一容器,儲放一第一氣體; 一第二容器,儲放一第二氣體;及 -控制模組,控制該第一氣體與該第二氣體之混合氣體壓 刀, 其士,該控制模組係根據該第一氣體壓力與混合處壓力之比 值4第一氣體壓力與混合處壓力之比值,以及該二比值間之比 例關J,,控繼第—氣體與該第二氣體混合前之壓力,進而控 合氣體生成量及配方比例,其中該第—氣體壓力Υ與該混 &amp;处壓力W之比值γ/w,及該第二氣體壓力Β與該混合處壓力w 之比值B/W,Y/W=5(B/W)。 17.如申請專利範圍第16項所述之氣體混成 苴 連接-第-暫存室,該第二容器則連接_第二暫存室,且^ = 裔與該等暫存室間分別設有—閥門,以控制該第—氣體與該 氣體之釋放。 队如申: 青專利範圍第Π項所述之氣體混成單元,其中該第一暫存室 巧該第二暫存室間具有通管相互通連,並設有透過該控制 拉組控制其混合。 15 1264967 19·如申請專利範圍第Η項所述之氣體混成單元’其中該苐一暫存室 與該第二暫存室分別設有一壓力計’將其壓力數值傳送至該控制 模組。 2〇·如申請專利範圍第16項所述之氣體混成單元,其中該第一容器與 該第二容器及氣體混合處分別設有一壓力計,將其壓力數值傳送 至該控制模組。 21· —種電漿氣體混成控制方法,透過控制一惰性氣體與一源氣體之 混合,決定其混合氣體於一電漿反應區所生成電漿氣體之生成量 及配方比例,其特徵在於根據該惰性氣體壓力與該電漿反應區壓 力之比值、該源氣體壓力與該電漿反應區壓力之比值,以及該二 比值間之比例關係,控制該惰性氣體與該源氣體混合前之壓力, 進而控制該電漿產生單元之電漿氣體生成量及配方比例,其中該 惰性氣體壓力Υ與該電漿反應區壓力W之比值Y/W,及該源氣體 壓力Β與該電漿反應區壓力W之比值B/W,Y/W=5(B/W)。 22·如申請專利範圍第21項所述之電漿氣體混成控制方法,其中該惰 性氣體與該源氣體可藉由熱電漿生成方式或非熱電漿生成 生成電漿,而於消毒殺菌之應用,其中熱電漿生成方式可為電^ 火炬法或電漿玻璃法,而非熱電漿生成方式則可為介 = 法,或電子束法、電暈放電法。 、” 23.如申請專利範圍第21項所述之電漿氣體混成控制方法,豆 性氣體與該源氣體係分別儲放於一第一容器與一第二哭。〜h 24·如申請專利範圍第23項所述之電漿氣體混成控制方法= -容器係連接-第-暫存室,該第二容器則連接二/暫二 且戎等谷态與該等暫存室間分別設有一閥門,, 與該源氣體之釋放。 彳工制表生軋體 25.如申請專利範圍第24項所述之電漿氣體混成控 -暫存室與該第二暫存室間具有通管相互H。、2第 制其混合。 、逆並叹有一虱閥控 26· -種氣體混成控制方法,用以控制一第一氣體與一第二氣體之、、曰 16 1264967 合氣體生成量及配方比例,其特徵在於根據該第一氣體壓力與混 合處壓力之比值、該第二氣體壓力與混合處壓力之比值,以及該 ^比值間之比例關係,來控制該第一氣體與該第二氣體混合前之 予力,進而控制其混合氣體生成量及配方比例,其中該第一氣體 與該混合處壓力〜之比值Y/w,及該第二氣體壓力B與該混 a處壓力W之比值b/W,Y/W=5(B/W)。 27· 圍第26項所述之氣體混成控制方法,其中該第-氣 豆/、μ弟—氣體係分別儲放於一第一容器鱼一第—容哭The plasma gas mixing unit of claim 11, wherein the first temporary storage chamber and the second temporary storage chamber are connected to each other, and a gas valve is disposed through the control module. Control its mixing. 14 1264967 13.=, the plasma gas mixing unit described in the patent scope, the control module. Mo Lishi, the pressure value is transmitted to the Μ. = May Patent I has passed the capacitor described in item 10 and the electrical component of the electrical equipment generation unit, and the pressure value is transmitted to the control. Module. I 15.=Please request the plasma gas mixing unit described in the scope of the patent range 1G, and the medium: T system is generated by the thermal or non-thermal plasma generation method: the body = the thermal plasma generation method can be Plasma: Method: Thermoelectric-type can be a dielectric discharge method, or a 16-gas mixing unit, comprising: a first container for storing a first gas; a second container for storing one a second gas; and a control module, controlling a mixed gas pressing knife of the first gas and the second gas, the control module is based on a ratio of the first gas pressure to a mixing pressure 4 The ratio of the pressure to the pressure at the mixing point, and the ratio between the two ratios, controlling the pressure before the mixing of the first gas and the second gas, thereby controlling the amount of gas generated and the proportion of the formula, wherein the first gas pressure The ratio Υ/w of the pressure to the pressure W at the mixing &amp; and the ratio of the second gas pressure Β to the pressure w at the mixing point B/W, Y/W = 5 (B/W). 17. The gas mixing entanglement-first temporary storage chamber according to claim 16 of the patent application, wherein the second container is connected to the second temporary storage chamber, and the *** and the temporary storage rooms are respectively provided a valve to control the release of the first gas and the gas. The gas mixing unit of the third aspect of the invention, wherein the first temporary storage chamber has a communication tube between the second temporary storage chambers, and is provided with a control group to control the mixing thereof. . 15 1264967 19. The gas mixing unit of claim </ RTI> wherein the first temporary storage chamber and the second temporary storage chamber are respectively provided with a pressure gauge to transmit the pressure value thereof to the control module. The gas mixing unit of claim 16, wherein the first container and the second container and the gas mixture are respectively provided with a pressure gauge, and the pressure value is transmitted to the control module. 21· a plasma gas mixing control method for controlling the amount of plasma gas generated by a mixed gas in a plasma reaction zone and a formula ratio by controlling mixing of an inert gas and a source gas, wherein a ratio of an inert gas pressure to a pressure of the plasma reaction zone, a ratio of the source gas pressure to a pressure of the plasma reaction zone, and a ratio between the two ratios, controlling a pressure before mixing the inert gas with the source gas, and further Controlling the plasma gas generation amount and the formula ratio of the plasma generating unit, wherein the ratio of the inert gas pressure Υ to the plasma reaction zone pressure W is Y/W, and the source gas pressure Β and the plasma reaction zone pressure W The ratio B/W, Y/W=5 (B/W). The method of controlling a plasma gas mixture according to claim 21, wherein the inert gas and the source gas are generated by a pyroelectric generation method or a non-thermal plasma to generate a plasma, and in the application of sterilization, The pyroelectric generation method may be an electric torch method or a plasma glass method, and the non-thermal plasma generation method may be a medium method, an electron beam method or a corona discharge method. 23. The plasma gas mixing control method according to claim 21, wherein the soybean gas and the source gas system are respectively stored in a first container and a second crying. The plasma gas mixing control method according to item 23 of the scope==the container is connected to the first temporary storage chamber, and the second container is connected to the second/temporary two and the valley state and the temporary storage chamber are respectively provided with one The valve, and the release of the source gas. The finished watchmaking body rolling body 25. The plasma gas mixing control-temporary chamber and the second temporary storage chamber have a communication tube between the temporary storage chamber as described in claim 24 H., 2, the second system of its mixing. The reverse and the sigh of a valve control 26 - a gas mixing control method for controlling the gas generation amount and formula of a first gas and a second gas, 曰16 1264967 a ratio characterized by controlling the first gas and the second gas according to a ratio of the first gas pressure to the mixing pressure, a ratio of the second gas pressure to the mixing pressure, and a proportional relationship between the ratios Pre-mixing force to control its mixed gas The ratio and the proportion of the formula, wherein the ratio of the first gas to the pressure at the mixing point Y/w, and the ratio of the second gas pressure B to the pressure W at the mixing a b/W, Y/W=5 (B /W). 27. The gas mixing control method according to Item 26, wherein the first gas-bean/, μ-di-gas system is stored in a first container fish 28·ΐ=Γί圍第27項所述之氣體混成控制方該第一容 苐—暫存室’該第二容器則連接-第二暫存室,且該 第:存室間分別設有-闕門,以控制該第-氣體與該 混合。 、令逋&amp;相互通連,並設有一氣閥控制其 或26項所述之氣體混成控制方 χ:第一暫存室容量;28·ΐ=Γί The gas mixing control unit described in item 27, the first container-temporary chamber, the second container is connected to the second temporary storage chamber, and the first: storage chamber is respectively provided with - a trick to control the mixing of the first gas with the gas. And 逋&amp; are connected to each other and are provided with a gas valve to control or the gas mixing control method described in item 26: the first temporary storage chamber capacity; γ•第一暫存室之惰性氣體壓力; A:第二暫存室容量; B·第二暫存室之源氣體壓力; W:電漿反應區之壓力;及 Z:電漿反應區之混合氣體體積。 17 1264967 七、指定代表圖: (一) 本案指定代表圖為:第(1 )圖。 (二) 本代表圖之元件符號簡單說明: 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式: 電漿氣體混成裝置 100 第一容器 110 第一暫存室 111 第一閥門 112 第一壓力計組 113 、 114 第二容器 120 第二暫存室 121 第二閥門 122 第二壓力計組 123 、 124 控制模組 130 氣閥 140 控制閥 150 電漿生成單元 200 壓力計 210γ• inert gas pressure in the first temporary storage chamber; A: second temporary storage chamber capacity; B. source gas pressure in the second temporary storage chamber; W: pressure in the plasma reaction zone; and Z: plasma reaction zone Mixed gas volume. 17 1264967 VII. Designated representative map: (1) The representative representative of the case is: (1). (2) A brief description of the symbol of the representative figure: 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: Plasma gas mixing device 100 First container 110 First temporary storage chamber 111 First valve 112 First pressure gauge group 113, 114 second container 120 second temporary storage chamber 121 second valve 122 second pressure gauge group 123, 124 control module 130 air valve 140 control valve 150 plasma generating unit 200 pressure gauge 210
TW92137403A 2003-12-30 2003-12-30 Plasma producing device with gas hybrid unit and method thereof TWI264967B (en)

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Publication number Priority date Publication date Assignee Title
TWI392521B (en) * 2009-01-06 2013-04-11 Spencer Szu-Ping Kuo Plasma torch air purifier

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WO2020259578A1 (en) * 2019-06-24 2020-12-30 Evernew Biotech, Inc. Plasma device including two gas inlets

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Publication number Priority date Publication date Assignee Title
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