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TWI264131B - Nucleation layer for improved light extraction from light emitting device - Google Patents

Nucleation layer for improved light extraction from light emitting device

Info

Publication number
TWI264131B
TWI264131B TW091133123A TW91133123A TWI264131B TW I264131 B TWI264131 B TW I264131B TW 091133123 A TW091133123 A TW 091133123A TW 91133123 A TW91133123 A TW 91133123A TW I264131 B TWI264131 B TW I264131B
Authority
TW
Taiwan
Prior art keywords
nucleation layer
emitting device
light emitting
substrate
light extraction
Prior art date
Application number
TW091133123A
Other languages
English (en)
Other versions
TW200304232A (en
Inventor
Tetsuya Takeuchi
Michael R Krames
Junko Kobayashi
Original Assignee
Lumileds Lighting Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds Lighting Llc filed Critical Lumileds Lighting Llc
Publication of TW200304232A publication Critical patent/TW200304232A/zh
Application granted granted Critical
Publication of TWI264131B publication Critical patent/TWI264131B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)
TW091133123A 2001-11-13 2002-11-12 Nucleation layer for improved light extraction from light emitting device TWI264131B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/993,862 US6683327B2 (en) 2001-11-13 2001-11-13 Nucleation layer for improved light extraction from light emitting devices

Publications (2)

Publication Number Publication Date
TW200304232A TW200304232A (en) 2003-09-16
TWI264131B true TWI264131B (en) 2006-10-11

Family

ID=25540011

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091133123A TWI264131B (en) 2001-11-13 2002-11-12 Nucleation layer for improved light extraction from light emitting device

Country Status (4)

Country Link
US (1) US6683327B2 (zh)
JP (1) JP4714401B2 (zh)
DE (1) DE10253083A1 (zh)
TW (1) TWI264131B (zh)

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US6943381B2 (en) * 2004-01-30 2005-09-13 Lumileds Lighting U.S., Llc III-nitride light-emitting devices with improved high-current efficiency
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FI118196B (fi) * 2005-07-01 2007-08-15 Optogan Oy Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä
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US20060160345A1 (en) * 2005-01-14 2006-07-20 Xing-Quan Liu Innovative growth method to achieve high quality III-nitride layers for wide band gap optoelectronic and electronic devices
US7221000B2 (en) * 2005-02-18 2007-05-22 Philips Lumileds Lighting Company, Llc Reverse polarization light emitting region for a semiconductor light emitting device
US20090008652A1 (en) * 2005-03-22 2009-01-08 Sumitomo Chemical Company, Ltd. Free-Standing Substrate, Method for Producing the Same and Semiconductor Light-Emitting Device
JP2007048869A (ja) 2005-08-09 2007-02-22 Sony Corp ＧａＮ系半導体発光素子の製造方法
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KR20090064474A (ko) 2006-10-02 2009-06-18 일루미텍스, 인크. Ｌｅｄ 시스템 및 방법
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WO2009021201A1 (en) * 2007-08-08 2009-02-12 The Regents Of The University Of California Planar nonpolar m-plane group iii-nitride films grown on miscut substrates
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WO2009097611A1 (en) * 2008-02-01 2009-08-06 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
US7829358B2 (en) * 2008-02-08 2010-11-09 Illumitex, Inc. System and method for emitter layer shaping
KR101142672B1 (ko) * 2008-09-11 2012-05-11 스미토모덴키고교가부시키가이샤 질화물계 반도체 광소자, 질화물계 반도체 광소자용의 에피택셜 웨이퍼, 및 반도체 발광 소자를 제조하는 방법
TW201034256A (en) * 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
WO2010141943A1 (en) * 2009-06-05 2010-12-09 The Regents Of The University Of California LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
JP4450112B2 (ja) * 2009-06-29 2010-04-14 住友電気工業株式会社 窒化物系半導体光素子
JP2011023534A (ja) * 2009-07-15 2011-02-03 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子
US8449128B2 (en) * 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
CN102782966B (zh) * 2010-03-04 2017-04-26 加利福尼亚大学董事会 在C‑方向错切小于+/‑15度的m‑平面基底上的半极性III‑氮化物光电子装置
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CN104393125B (zh) * 2014-12-17 2017-05-10 安徽三安光电有限公司 一种发光元件的制备方法
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Also Published As

Publication number Publication date
DE10253083A1 (de) 2003-05-28
JP2003158294A (ja) 2003-05-30
TW200304232A (en) 2003-09-16
US20030089917A1 (en) 2003-05-15
US6683327B2 (en) 2004-01-27
JP4714401B2 (ja) 2011-06-29

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