1264128 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種散熱片的製造方法及其產品，特 別疋指一種用於半導體元件的微型散熱片的製造方法及其 產品。 【先前技術】 隨著電子產品功能需求愈來愈高，半導體元件例如IC 晶片、LED晶片等的單位體積（面積）的運作功率必須隨 之提昇，同時，隨著半導體元件單位體積（面積）的運作 功率的提幵，其運作時所產生的熱也會隨之增加；而半導 體兀件運作時若無法適時將熱導離，會因為熱蓄積而產生 例如漏電、元件失效等各種運作上的問題，因此，如何解 決半導體元件的散熱問題，是業界、學界研究發展的目標 之—° >閱圖1，之前，半導體元件1〇〇，例如led晶片，所 使用的散熱片1，僅為利用具有高熱傳導係數之金屬，例如 銅、，銀、金’或銘等，直接在其上以機鍍、蒸鑛等各種方 式形f薄層’或是先成型後再黏著連結至半導體元件100 上，藉此將半導體元件1GG運作時產生的熱導離半導體元 本身進而維持半導體元件100的運作正常。 但是，由於此等金屬的熱傳導模型，是藉由電子振動 將熱能擴散傳遞，因此熱傳導較慢；而隨著半導體元件100 運：功率愈見提高，單位運作時間内單位體積所產生的埶 心之增加’因此’此類利料有高熱傳導係數金屬形成 1264128 散熱片1以協助半導體元件100散熱的方式，由於散熱傳 導速率較慢而無法與半導體元件100發熱功率相匹配，而 逐漸不敷半導體元件100的散熱需求。 目釗’由於以「碳」所構成的鑽石結構，是以「晶格 振動」方式（即聲子振動方式）傳導熱，其導熱效率為銀 、銅（熱傳導最快的已知金屬元素）的三至五倍，同時也 是電的絕緣體，因此被學界、業界視為解決半導體元件 熱問題的關鍵材料。 但是，鑽石的成長極為緩慢，且須在高溫下進行，所 以製程成本十分昂貴，因此若完全製成散熱片的形式供半 導體兀件100月文熱使用’其成本太高而不合實際需求；較 為適當的解決方式是以鑽石薄膜結合散熱佳的金屬層，而 可利用鑽石薄膜快速的將熱傳導至金屬層上而達到散熱的 效果，同時，也符合實際生產製成成本需求。 而，要利用鑽石製造供半導體元件1〇〇散熱的散熱元 件’必須先在可連結至半導體元# 100的導熱金屬，例如 銅層上成長出鑽石薄膜’再將成長有鑽石薄膜的導熱金屬 層與半導體元#刚連結，而經由導熱金屬層、鑽石薄膜 將半導體元件㈣❹生的熱快料離半導體元件1〇〇 〇 然而’熱傳導性佳的金屬，例如銅、銀的表面性質與 鑽石並不相匹配，且其熔點遠低於鑽石晶種的成長溫度， 因此並無法順利成長品質合乎應用的鑽石薄膜。 因此，即便目前已知鑽石是最有希望解決目前半導體 1264128 元件散熱問題的材料’但是’若是無法在熱傳導性佳的金 屬上；I貝利、且低成本的成長出品質合乎應用要求的鑽石薄 膜結構’進而應用於半導體元件刚±以供散熱，仍^ 法應用具有超高熱傳導能力的鑽石，解決半導體元件_ 的散熱問題。 【發明内容】 因此，本發明之㈣，即在提供一種具有鑽石層之散 熱片的製造方法及其產品，以製造出具有品f合乎應用1 具有超高熱傳導效能之鑽石層的散熱片，而可與半導體元 件相連結以供半導體元件散熱之用。 几 於是，本發明一種具有鑽石㉟之散熱片&製造方法， 包含以下步驟。 (A) 在一基材表面形成一鑽石層。 (B) 活化該鑽石層表面成一第一成長面。 (C) 在該第—成長面上以具有高熱傳導係數的金屬形 成一第一金屬膜。 (D) 在該第一金屬膜上形成一增厚層。 ⑻移除該基材，使該鑽石層相反於該第一成長面的 一底面裸露。 (F)活化該底面成一第二成長面。 在該第二成長面上以具有高熱傳導係數的金屬形成一 第二金屬膜。[Technical Field] The present invention relates to a method of manufacturing a heat sink and a product thereof, and in particular to a method of manufacturing a micro heat sink for a semiconductor element and a product thereof. [Prior Art] As the functional requirements of electronic products become higher and higher, the operating power per unit volume (area) of semiconductor components such as IC chips, LED chips, etc. must be increased, and at the same time, with the unit volume (area) of semiconductor components The increase in operating power will increase the heat generated during operation. If the semiconductor components fail to conduct heat in time, various operational problems such as leakage and component failure may occur due to heat accumulation. Therefore, how to solve the problem of heat dissipation of semiconductor components is the goal of research and development in the industry and the academic world. -1, before, semiconductor device 1 such as led wafer, the heat sink 1 used is only utilized. A metal having a high heat transfer coefficient, such as copper, silver, gold, or stencil, is directly formed thereon by machine plating, steaming, or the like, or is formed into a thin layer or bonded and bonded to the semiconductor device 100. Thereby, the heat generated when the semiconductor element 1GG operates is guided away from the semiconductor element itself to maintain the normal operation of the semiconductor element 100. However, due to the heat conduction model of these metals, the thermal energy is diffused and transmitted by the electronic vibration, so the heat conduction is slow; and as the semiconductor component 100 is operated: the power is increased, and the unit volume generated during the unit operating time is Increasing 'so' such a material has a high heat transfer coefficient metal to form 1264128 heat sink 1 to assist the heat dissipation of the semiconductor device 100, because the heat conduction rate is slow, and can not match the heat power of the semiconductor device 100, and gradually less than the semiconductor device 100 heat dissipation requirements. I saw that the diamond structure consisting of "carbon" conducts heat in a "lattice vibration" manner (ie, phonon vibration), and its thermal conductivity is silver or copper (a known metal element with the fastest heat conduction). Three to five times, and also an insulator of electricity, it is regarded by the academic community and the industry as a key material to solve the thermal problem of semiconductor components. However, the growth of diamonds is extremely slow and must be carried out at high temperatures, so the process cost is very expensive. Therefore, if the form of the heat sink is completely made for the semiconductor element, the cost is too high and it is not practical; The appropriate solution is to use a diamond film to combine the heat-dissipating metal layer, and the diamond film can quickly transfer heat to the metal layer to achieve heat dissipation, and at the same time meet the actual production cost requirements. However, it is necessary to use a diamond to manufacture a heat dissipating component for dissipating heat from a semiconductor device. A diamond film must be grown on a thermally conductive metal such as a copper layer that can be bonded to the semiconductor element 100, and a thermally conductive metal layer having a diamond film grown thereon. Just joined to the semiconductor element #, and the thermal material generated by the semiconductor element (4) is transferred from the semiconductor element 1 via the thermally conductive metal layer or the diamond film. However, the surface properties of the metal having good thermal conductivity, such as copper and silver, are not Matching, and its melting point is much lower than the growth temperature of diamond seeds, so it is not possible to smoothly grow the quality of the diamond film. Therefore, even though diamonds are currently known to be the most promising material for solving the heat dissipation problem of current semiconductor 1264128 components, 'if it is not possible on metals with good thermal conductivity; I. Bailey, and low-cost growth of diamond film with quality requirements. The structure 'is further applied to the semiconductor element just for heat dissipation, and the diamond having ultra-high thermal conductivity is still applied to solve the heat dissipation problem of the semiconductor element. SUMMARY OF THE INVENTION Therefore, (4) of the present invention provides a method for manufacturing a heat sink having a diamond layer and a product thereof, and a heat sink having a diamond layer having an ultrahigh heat transfer performance in accordance with Application 1 is produced. It can be connected to a semiconductor element for heat dissipation of the semiconductor element. Thus, the present invention provides a heat sink & method of manufacturing a diamond 35 comprising the following steps. (A) Forming a diamond layer on the surface of a substrate. (B) activating the surface of the diamond layer to form a first growth surface. (C) Forming a first metal film on the first growth surface with a metal having a high heat transfer coefficient. (D) forming a thickened layer on the first metal film. (8) removing the substrate such that the diamond layer is exposed opposite to a bottom surface of the first growth surface. (F) activating the bottom surface into a second growth surface. A second metal film is formed on the second growth surface by a metal having a high thermal conductivity.
元件熱連接，以㈣半導體元件運作時產生的熱導離 7 1264128 半導體元件，其包含 結單元。 該鑽石層，具有 一鑽石層、一強化支撐單元 相反之一第一成長面與一第 ，及一連 一成長面 、該強化支撐單元以一具有高熱傳導係數的第-金屬形 成’具有-自該第—成長面相反於㈣二成長面方向形成 的第一金屬膜，及-自該第-金屬膜上向相反於該第二成 長面方向形成的增厚層’用以支撐該鑽石層結構。 °亥連、、、。單疋以一具有高熱傳導係數的第二金屬形成， /、有开V成在4第二成長面上的第二金屬冑，可與該 體70件直接接觸連結，以將該半㈣元件運 經由該鑽石層迅速導離該半導體4。 的’、，、 【實施方式】 有關本發明之I、+、U β 月J迷及其他技術内容、特點與功效，在 以下配合參考圖或+ 一個較佳實施例的詳細說明中，將 清楚的呈現。 ^ 2本'明破詳細描述之前，要注意的是，在以下的說 月内合中自似的兀件是以相同的編號來表示。 參閱圖2、· 2 , 口 3,本發明具有鑽石層之散熱片的一較佳 實施例，是可製偌Φ 出如圖2所示具有鑽石層之散熱片2,進 而如圖3所示與丰逡 — 可將半導體元彳1(Γ^Λ1(Κ)，例如LED晶片連接，而 運作時產生的熱，經由具有鑽石層之 散”、、片2導離半導體元件1〇〇。 具有鑽石層之散熱片2包含一鑽石層21、一強化支撐 1264128 早兀22，及一連結單元23。 成長面211與一第二成長面212。 如八強t支撐早^ 22以具有高熱傳導係數的第-金屬，例 最二二銀、Γ、路、銘、鐵、嫣等形成，在此以具有 取 4勢與呵熱傳導率的銅為例說明 22具有-自第-成長面2U相反於第二成長…= :的第-金屬臈221，及一自第一金屬膜221上更向相反於 弟一成長面212方向形成的增厚層222’第-金屬膜221的 厚度介於（U〜2鋒，增厚層222的厚度介於是丨⑽〜3〇〇_ ’本例是《 100#m為例說明，用卩支撐鑽石I 21的結構 連結單兀23與強化支撐單元22相類似，也是以一具 有高熱傳導係數的第二金屬，例如金、銅、銀、鈦、鉻、 鋁等形成，在此以具有最佳成本優勢與高熱傳導率的銅為 例說明，連結單元23具有一形成在第二成長面212上，且 厚度不大於2/zm的第二金屬膜231。由於鑽石表面特性穩 定無法直接利用銀膠或是導熱膠等與半導體元件1〇〇連結 ’所以必須利用此第二金屬膜23丨作為一接著面，再與半 導體元件100直接接觸連結，或以導熱膠、銀膠等貼黏在 半導體元件100上，以將半導體元件1〇〇運作時產生的熱 經由鑽石層21迅速導離半導體元件1 〇〇 ;此外，亦可以利 用此第二金屬膜231形成預定圖像，配合半導體元件1〇〇 的電路配置作為電極與其他元件及電路相連接使用。 1264128 ^所不，具有鑽石層之散熱片2以第 =者面’利用導熱膠、銀膠等與半導體…。。黏貼 屬膜231而當+導體…00作動發熱時，可藉由第二金 =將熱快速傳導至鑽石層21，利用鑽石本身利用，「 B曰口振動」方式快速將熱傳遞至第一金屬冑221與増厚層 =本/ 將半導體元件⑽的熱導離半導體元件 進而達到使半導體元件刚穩^運作的功效。 _上述具有鑽石層之散熱片2在配合以下如圖4、圖5所 -有鑽石層之散熱片的製造方法的說明冑主 楚地明白。 田』尺/月 百先進行步驟4卜在表面粗糖度不大於Q 的多孔 矽基材51表面，以化學蒸鍍沉積法（pVD)成長形成鑽石 層21。由於以化學蒸鑛沉積法切基材51上成長形成鑽石 層21的過程細節，以為業界所周知，且並非本發明創作重 點所在，諒可不對此步驟多加闞述。 接著進行步驟42，在lx 1〇_3〜5χ 1〇·1τ〇ΓΓ的壓力，以 及25°C〜20(TC的溫度下，將氮氣在一以鑽石為電極、射頻 (RF) 13·56ΜΗζ形成之電場中游離成氬離子，並以氬離子 濺射鑽石層21表面而將其活化成第一成長面211。 然後進行步驟43，在不破真空的狀態下（在此，是不 將成長有鑽石層21的矽基材51移出，而與步驟12在相同 的反應腔中進行後續過程），在第一成長面211上以銅為靶 材’錢艘形成厚度介於〇1〜2 的第一金屬膜221。 由於鑽石層21表面已利用氬離子活化，因此，激發出 10 1264128 的銅離子在表面性暂知^ 、 貝相匹配的狀態下，是均勻地附著在第 成長面211形成楚 . 风弟一金屬膜221。再者，此過程改以蒸鍍 方式，亦可以將銅均勺 J -J形成弟一金屬膜221，由於濺鍍與茱 鑛技術的過m以為業界所壯，且歸本發明創作 重點所在，故不再對此步驟多加闡述。 再進行步驟44 . ^ ^ ^ 以弟一金屬膜221為晶種以電鍍增厚 $成厚度為1〇〇"m的增厚層222,而使第-金屬膜221 θ旱層222共同形成強化支撐單元22，用以後續移除石夕 土材51之後’支撐厚度僅為15〜5G// m的鑽石層21的結構 〇 在此要特別祝明的是，本步驟亦可以改用其他製程如 擴放或燒結的方式進行，其過程是在第一金屬膜⑵上， 置附銅或是其他類似例如金、銀、鈦、鉻、铭、鐵、鶴等 屬的叙末或片狀物’再以燒結方式與第一金屬冑Μi連 結形成增厚層222,進而與第—金屬膜221共⑽成強化支 撐單元22。 夕接著進行步•驟45，利用研磨方式及/或化學餘刻方式移 ”夕孔夕基材51，使鑽石層21相反於第一成長面212的底 面裸露。 $然後進行步驟46，類似於步驟12的過程，在1χ 1〇_ X 1〇 Τ〇ΓΓ的壓力，以及25°C〜200°C的溫度下，將氬氣 在一以鑽石為電極、射頻（RF) 13·56ΜΗζ形成之電場中游 離成氬離子，並以氬離子濺射鑽石層21底面將其活化成第 二成長面212。 1264128 取後進行步驟47，類似於步 的狀態下(在此亦是不將 二程，在不破真空 h移出，而與步驟】 化支接…的鑽石層 在第二成長面212 μ 的反應财進行後續過程）， 大於第為μ，_输形成厚度不 述且有鑽;^之:1’成為連結單元23,即完成上 層之散熱片2的製備，進而可如圖3所示，利 用弟一金屬膜231作為接 上，Μ接者面’直接連結至半導體元件1()〇 或疋再利用銀膠、導熱膠等與半導體元件⑽黏貼成 體而將半導體元件1 00 i軍你η主立 件1〇〇。 運作時產生的熱導離半導體元 由上述說明可知，本發 製造方法，主要是蓉= '種具有鑽石層之散熱片的 ;’s銀等具有咼熱傳導係數的金屬 ，因為表面性質匹配、蒸鍍時的蒸氣壓、熔點等因素，而 無法直接在其上成長鑽石層，因此，轉換整個成長順序， =利用目前較成熟的化學蒸鍍技術，切基材51上成長品 貝幾近完美的鑽石I 21’之後’再利用氯離子活化鑽石層 表面’並在不破真空的狀態下，滅鍍成長出銅、銀等第 一金屬膜221 ’再電鍍增厚之後，形成足以支撐鑽石層21 結構的強化支撐單a 22,之後，再研磨及/或化 學餘刻移除 矽基材51c，並利用相類似的過程，在鑽石層21另一面成 長出用於與半導體元件1〇〇相連結之接著面用的第二金屬 膜231，而完成具有鑽石層之散熱片2的製造。且，以本發 明之製造方法所製造出來的成品，由於鑽石層21品質完^ 且以強化支撐單元22完整地支撐其結構，因此可充分發 12 1264128 揮其預定的散熱效果，在同樣以約150μηι厚的散熱片相比 較，以本發明之製造方法所製造出來之成品的導（散）熱 速率估算為以銅為主要成分金屬所製成的散熱片的3倍以 上，確實達到本發明的創作目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及δ兒明書内谷所作之簡單的等效變化與修飾，皆仍屬 本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一不意圖，說明習知一以導熱性佳的金屬形成 之散熱片與-半導體元件連結的態樣，並說明散熱片導離 半導體元件作動時產生的熱； 圖2是一示意、圖，說明本發明具有鑽石|之散熱片的 一較佳實施例； 具有鑽石層之散熱片與一 元件作動時產生的熱的狀 圖3是一示意圖，說明圖2 半導體元件連結’並導離半導體 態； 圖4是一流程圖，句日 ^ ^ °兄明製造如圖2之具有鑽石層之散 ,、、、片時，其製造方法之# v鄉41至步驟44的過程；及 圖5是一流程圖，今 熱片時，其製造方法之牛、如圖2之具有鑽石層之散 v驟45至步驟48的過程。 13 1264128 【主要元件符號說明】 100 半導體元件 23 連結單元 1 散熱片 231 第二金屬膜 2 具有鑽石層之散熱 41 步驟 片 42 步驟 21 鑽石層 43 步驟 211 第一成長面 44 步驟 212 第二成長面 45 步驟 22 強化支撐單元 46 步驟 221 第一金屬膜 47 步驟 222 增厚層 51 矽基材 14The component is thermally connected to (4) the thermal conduction generated by the operation of the semiconductor component. 7 1264128 The semiconductor component comprises a junction cell. The diamond layer has a diamond layer, a reinforcing support unit opposite one of the first growth surface and a first, and a continuous growth surface, the reinforcement support unit is formed by a first metal having a high thermal conductivity. The first growth surface is opposite to the first metal film formed in the direction of the (four) growth plane, and the thickening layer formed on the first metal film opposite to the second growth surface is used to support the diamond layer structure. °Hailian,,,. The single crucible is formed by a second metal having a high thermal conductivity, and the second metal crucible having an opening V to be formed on the second growth surface of the fourth growth surface can be directly contacted with the body 70 to transport the semi-four component. The semiconductor 4 is rapidly guided away through the diamond layer. ',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Presentation. ^ 2 Before this detailed description, it should be noted that in the following, the components in the month are represented by the same number. Referring to Figures 2, 2 and 3, a preferred embodiment of the heat sink having a diamond layer of the present invention is capable of producing a heat sink 2 having a diamond layer as shown in Fig. 2, and further shown in Fig. 3. With the 逡 逡 - the semiconductor element 彳 1 (Γ Λ Κ Κ , , , , , LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED 可 可 可 可 可 可 可 可 可The heat sink 2 of the diamond layer comprises a diamond layer 21, a reinforcing support 1264128 early 22, and a connecting unit 23. The growth surface 211 and a second growth surface 212. For example, the eight strong t support early 22 to have a high heat transfer coefficient The first metal, for example, the second two silver, bismuth, road, inscription, iron, bismuth, etc., here as an example of copper having a potential of 4 and heat conductivity 22 has - from the first - growth surface 2U opposite to The second metal 221 of the second growth...=: and the thickened layer 222' of the thickened layer 222' formed from the first metal film 221 in the direction opposite to the growth surface 212 of the second metal film 221 is (U ~2 front, thick layer 222 thickness is between 丨(10)~3〇〇_ 'This example is "100#m as an example, using 卩 to support diamond I 21 The structural connecting unit 23 is similar to the reinforcing supporting unit 22, and is also formed of a second metal having a high thermal conductivity, such as gold, copper, silver, titanium, chromium, aluminum, etc., thereby having the best cost advantage and high. The copper of the thermal conductivity is taken as an example. The connecting unit 23 has a second metal film 231 formed on the second growth surface 212 and having a thickness of not more than 2/zm. Since the surface characteristics of the diamond are stable, it is not possible to directly use the silver paste or the thermal adhesive. The semiconductor element 1 is connected to the semiconductor device 100, so that the second metal film 23 is used as a bonding surface, and then directly bonded to the semiconductor device 100, or adhered to the semiconductor device 100 with a thermal conductive paste, a silver paste, or the like. The heat generated when the semiconductor element 1 is operated is rapidly guided away from the semiconductor element 1 through the diamond layer 21; further, the second metal film 231 can be used to form a predetermined image, and the circuit configuration of the semiconductor element 1 is used as The electrode is connected to other components and circuits. 1264128 ^No, the heat sink 2 with the diamond layer uses the thermal adhesive, silver paste, etc. and the semiconductor. When the +-conductor 00 is activated, the heat can be quickly transmitted to the diamond layer 21 by the second gold=, and the heat is quickly transferred to the first metal by the use of the diamond itself.胄221 and 増 thick layer=本/ The heat of the semiconductor element (10) is guided away from the semiconductor element to achieve the effect of the semiconductor element being rigidly operated. _ The above-mentioned heat sink 2 having a diamond layer is matched as shown in Figs. 4 and 5 below. - Description of the manufacturing method of the heat sink with diamond layer. The main understanding is that the surface of the porous tantalum substrate 51 having a surface roughness of not more than Q is subjected to chemical vapor deposition. (pVD) grows to form a diamond layer 21. Since the details of the process of growing the diamond layer 21 on the substrate 51 by chemical vapor deposition are well known in the art and are not the focus of the present invention, it is not necessary to repeat this step. Then proceed to step 42, at a pressure of lx 1〇_3~5χ 1〇·1τ〇ΓΓ, and at a temperature of 25 ° C to 20 (TC), nitrogen is used as a diamond, and the radio frequency (RF) is 13.56ΜΗζ. The formed electric field is freed into argon ions, and the surface of the diamond layer 21 is sputtered with argon ions to activate it into the first growth surface 211. Then, step 43 is performed, without breaking the vacuum (here, it will not grow) The ruthenium substrate 51 of the diamond layer 21 is removed, and the subsequent process is performed in the same reaction chamber as in step 12), and the first growth surface 211 is made of copper as a target material to form a thickness of 〇1~2. A metal film 221. Since the surface of the diamond layer 21 has been activated by argon ions, the copper ions excited by 10 1264128 are uniformly attached to the first growth surface 211 in a state where the surface is temporarily known and matched. The wind brother has a metal film 221. Moreover, the process is changed to the evaporation method, and the copper-junction J-J can also be formed into a metal film 221, which is strong in the industry due to the sputtering and antimony mining technology. And it is the focus of the creation of this invention, so this step will not be elaborated. Further, step 44 is performed. ^ ^ ^ The mother metal film 221 is used as a seed crystal to thicken the thick layer 222 into a thickness of 1 〇〇 " m, and the first metal film 221 θ dry layer 222 is formed. The reinforcing support unit 22 is used for the subsequent removal of the structure of the diamond layer 21 having a thickness of only 15 to 5 G//m after the Shixia soil material 51. It is particularly important to note that this step can also be changed to other The process is carried out in the manner of expansion or sintering, which is carried out on the first metal film (2), with copper or other similar genus such as gold, silver, titanium, chromium, Ming, iron, crane, etc. The material 'is further joined to the first metal 胄Μi by sintering to form a thickening layer 222, and further (10) with the first metal film 221 to form a strengthening support unit 22. Then, step 45 is performed, using a grinding method and/or a chemical residue. The engraved mode shifts the substrate 51 so that the diamond layer 21 is exposed opposite to the bottom surface of the first growth surface 212. Then, step 46 is performed, similar to the process of step 12, at 1χ 1〇_ X 1〇Τ〇ΓΓ The pressure, and the temperature of 25 ° C ~ 200 ° C, the argon gas in a diamond as the electrode, radio frequency (RF) 13.5 The electric field formed by 6ΜΗζ is freed into argon ions, and the bottom surface of the diamond layer 21 is sputtered with argon ions to activate it into the second growth surface 212. 1264128 is taken after step 47, similar to the step state (here is not In the second pass, the vacuum layer is removed without breaking the vacuum, and the diamond layer in the step of ... is in the second growth surface of 212 μ of the reaction proceeds for the subsequent process), greater than the first μ, the thickness of the formation is not described and there is a drill; ^1: 1' becomes the connecting unit 23, that is, the preparation of the heat sink 2 of the upper layer is completed, and as shown in FIG. 3, the metal film 231 is attached as the upper surface, and the surface of the solder joint is directly connected to the semiconductor element 1 ( ) 〇 or 疋 re-use silver paste, thermal conductive adhesive, etc., and the semiconductor component (10) is adhered to the body and the semiconductor component 1 00 i military η main stand 1 〇〇. The thermal conduction of the semiconductor element generated during operation is known from the above description. The manufacturing method of the present invention is mainly a powder of a heat sink having a diamond layer, and a metal having a heat transfer coefficient such as silver, because the surface properties are matched and steamed. The vapor pressure, melting point and other factors during plating cannot directly grow the diamond layer on it. Therefore, the whole growth sequence is converted. = Using the more mature chemical vapor deposition technology, the growth of the substrate 51 is almost perfect. After the diamond I 21 're-uses the chloride ion to activate the surface of the diamond layer' and under the condition of not breaking the vacuum, the first metal film 221 ' of copper, silver and the like is grown by de-plating, and then thickened by electroplating to form a structure sufficient to support the diamond layer 21 The reinforced support sheet a 22, after which the ruthenium substrate 51c is removed by grinding and/or chemical re-etching, and a similar process is used to grow on the other side of the diamond layer 21 for connection with the semiconductor device 1 Next, the second metal film 231 is used to complete the manufacture of the heat sink 2 having the diamond layer. Moreover, in the finished product manufactured by the manufacturing method of the present invention, since the quality of the diamond layer 21 is completed and the structure is completely supported by the reinforcing support unit 22, the predetermined heat dissipation effect can be fully generated by 12 1264128. Compared with a 150 μη thick heat sink, the heat transfer rate of the finished product produced by the manufacturing method of the present invention is estimated to be more than three times that of a heat sink made of copper as a main component metal, and indeed achieves the present invention. Creative purpose. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention cannot be limited thereto, that is, the simple equivalent change made by the patent application scope and the valley of the δ 儿书. And modifications are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a state in which a heat sink formed of a metal having good thermal conductivity is bonded to a semiconductor element, and a heat generated when the heat sink is guided away from the operation of the semiconductor element; 2 is a schematic view showing a preferred embodiment of a heat sink having a diamond of the present invention; a heat generating sheet having a diamond layer and heat generated when a component is actuated; FIG. 3 is a schematic view showing the semiconductor of FIG. The component is connected 'and guided away from the semiconductor state; FIG. 4 is a flow chart. The sentence is made by the ^^ ° brother to produce the diamond layer as shown in Fig. 2, and the film is manufactured. The process of 44; and FIG. 5 is a flow chart, in the case of the hot film, the process of manufacturing the cow, as shown in FIG. 2, having the process of dispersing the diamond layer from step 45 to step 48. 13 1264128 [Description of main component symbols] 100 Semiconductor component 23 Connection unit 1 Heat sink 231 Second metal film 2 Heat dissipation with diamond layer 41 Step sheet 42 Step 21 Diamond layer 43 Step 211 First growth surface 44 Step 212 Second growth surface 45 Step 22 Strengthen the support unit 46 Step 221 First metal film 47 Step 222 Thicken layer 51 矽 Substrate 14