TWI263870B - Imprinting process - Google Patents

Abstract

An imprinting process is disclosed. The imprinting process comprises: providing an imprinting mold, wherein a surface of the imprinting mold has a pattern; forming a thermally stable polymer layer to cover the surface of the imprinting mold, wherein the thermally stable polymer layer fills and levels up the pattern of the imprinting mold, so as to make a surface of the thermally stable polymer layer have a complementary pattern corresponding to the pattern; forming a photoresist layer to cover the thermally stable polymer layer; forming a transparent substrate to cover the photoresist layer; performing an irradiating step to polymerize the photoresist layer; removing the imprinting mold; and performing a patterning step to transform the complementary pattern on the thermally stable polymer layer onto the transparent substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an imprinting process, and more particularly to a nanoimprinting process. [Prior Art] The current nanoimprint technology firstly applies an etch resist uniformly on a substrate, and then presses the imprint template on the etch barrier layer, thereby transferring the pattern on the imprint template to the etch barrier. Floor. If it is distinguished by the temperature of the imprint process, it can be divided into a high temperature imprint process and a low temperature imprint process. Referring to Figs. 1 to 3, the i-th to the third drawings show a cross-sectional view of a conventional high temperature imprint process. In the high-temperature imprinting process, the substrate is first provided, and then the etching barrier layer 1〇2 is coated on the substrate 1〇〇. Among them, the material of the etched P spacer 102 needs to be a thermoplastic polymer material. Next, as shown in Fig. 1, an imprint template 1〇4 is provided, and the imprint template 104 has a pattern 106 on its surface. Next, a heating step is performed to make the process temperature greater than the glass transition temperature (Tg) of the etch barrier layer 102. The embossing template ι 4 is then pressed down onto the etch barrier layer 102 to transfer the pattern 1 〇 6 of the embossing stencil 1 〇 4 to the π ^ barrier layer 102 as shown in FIG. Then, the heat source is removed, and the squeezing action is performed, and the embossing template i 〇4 is removed from the etch barrier layer 1 to obtain an embossed pattern complementary to the pattern 丨〇6 of the embossing template i 〇4. 1〇8 is on the barrier layer 102 of the substrate 100, as shown in FIG. In May, please refer to Figure 4 to Figure 6. Figure 4 to Figure 6 show the private profile of the conventional 1263870 low C-print. In the low temperature imprint process, the substrate 200 is first provided, and then the photoresist layer 202 is coated on the surface of the substrate 200. The material of the photoresist layer 2〇2 is an illuminating polymerizable material. Next, as shown in Fig. 4, an imprint template 204 is provided having a pattern 206 on the surface of the imprint template 2G4. Wherein, the imprint template 2〇4 is a light transmissive template. Subsequently, the imprint template 204 is pressed down on the photoresist layer 2〇2, and the photoresist layer 202 is filled into the imprinting mold to reverse the image of the image b2〇". The light is again applied to the imprint template 204 as shown in Fig. 5. Among them, the light 2 〇 8 is ultraviolet light. The short-wavelength ultraviolet light is irradiated for a short period of time to cause the photoresist layer 202 to be polymerized and cured. Then, the dicing step is performed, and the embossing template 204 I is etched by the etched template, and the etched pattern 21 complementary to the pattern 206 of the embossing template 204 is etched on the substrate 2 〇〇. On the barrier layer 202, as shown in FIG. In the current high-temperature imprinting process, it is necessary to heat up to the glass transition temperature of the resist to perform the imprinting operation, and the resist is filled in the micropattern of the imprint template. Since the shrinkage of the resister only needs to consider the shrinkage of the polymer after heating and cooling, it has the advantage of dimensional stability. However, higher operating temperatures can deform the substrate and are not suitable for plastic substrates in the flexible region, especially for low glass transition temperatures; in addition, high temperature imprinting processes require higher than the resist glass transition temperature. Under the 'Shi Gaoqian', the fluid resist is filled into the dust-printing template. At this time, the fluidity of the resist cannot completely fill the micro-scale pattern, so it is not suitable for the transfer of micro-scale patterns. On the other hand, in the low-temperature imprinting process, the photoresist monomer must first be patterned and then subjected to photopolymerization. The polymerization of the photoresist 1263870 is uniform and fast, and an appropriate amount of bridging agent is usually added to the photoresist formulation, but this causes a large dimensional shrinkage. Since low temperature imprint technology does not require high temperature and high pressure, it is more suitable for pattern transfer of photoresists on some plastic substrates, and the transfer and release of this technology can be completed in a few seconds. However, a special quartz template is required for the low-temperature imprinting process to make the short-wavelength light source penetrate to provide polymerization energy, so the cost is high; in addition, when the photoresist is polymerized, a bridging reaction occurs, and thus the shrinkage deformation of the transfer pattern is also More serious. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an imprint process suitable for imprinting of micron-to-nano-scale patterns, which combines the advantages of both high-temperature imprinting and low-temperature imprinting. The new formulation allows the embossing to be applied to both soft and hard substrates to improve the shortcomings of existing embossing techniques. Another object of the present invention is to provide an imprint process that can be operated at low temperatures not possible with high temperature imprinting. Therefore, the present invention can be applied to a flexible substrate, and has a low operating pressure, and a soft and hard template can be employed. Moreover, the present invention has better dimensional stability and good etch selectivity as compared with the low temperature imprint process. According to the above object of the present invention, an imprint process is provided, comprising at least: providing an imprint template, wherein one surface of the imprint template has a pattern; forming a thermally stable polymer layer covering the imprint template described above : on the surface, wherein the thermally stable polymer layer is filled with the imprint template, and the surface of the thermally stable polymer layer is in surface contact with the surface of the imprint template 1263870. a complementary pattern of the pattern; forming a photoresist layer covering the thermal stable polymer layer; forming a moon-permeable substrate overlying the photoresist layer; performing an irradiation step to generate the photoresist layer Polymerizing, flipping the above-mentioned imprint template and removing the imprint template 'to expose the complementary pattern on the surface of the thermally stable polymer layer' and performing a patterning step whereby the thermally stable polymer layer is The complementary pattern on the surface is transferred to a transparent substrate. According to a preferred embodiment of the present invention, between the step of providing an imprint template and the step of forming a thermally stable polymer layer, at least the surface of the imprint template is removed by using a surfactant having a lower surface activity. Mold processing to facilitate the smooth removal of the imprint template after the pattern transfer is completed. As can be seen from the above, the imprint process of the present invention is suitable for the fabrication of micron or nanoscale patterns, has the ability to operate at low temperatures, is suitable for a variety of stencils, requires no downforce, has low shrinkage, and can be applied to flexible substrates. Advantages of the material [Embodiment] The present invention discloses an imprint process suitable for making micro or nano patterns, and can be fabricated at low operating temperatures and low operating pressures, and is suitable for 4 flex substrates. Excellent dimensional stability. In order to make the description of the present invention more detailed and complete, reference is made to the following description and in conjunction with the diagram of Figure 7-12. Referring to Figures 7 through 12, Figures 7 through 12 illustrate a cross-sectional view of an imprint process in accordance with the preferred embodiment of the present invention. In the imprint process of this 1263870, an imprint template 300 is first provided, wherein the imprint template 300 has a microstructured pattern 302 on its surface, and the imprint template 3 is as shown in FIG. In the present invention, the imprint template 3 can be a soft or rigid template such as glass, quartz, tantalum wafer or rubber. Next, before the imprinting using the imprint template 300, it is preferable to perform the mold release treatment on the imprint template 300. The mold release process of the embossing template 3 is firstly immersed in the absolute alcohol/secondary water solution, wherein the volume ratio of the absolute alcohol to the secondary water is preferably 丨: 丨. The imprint template 300 is then immersed in absolute alcohol. When the imprinting template is sequentially immersed in the absolute alcohol/secondary aqueous solution and absolute alcohol, the ultrasonic oscillating treatment is performed by using, for example, an ultrasonic cleaner, wherein the ultrasonic oscillating treatment is preferably performed for 2 〇 minutes. Next, the imprint template 300 is dried by, for example, nitrogen gas, 2), and the impurities and moisture on the imprint template 3 are surely removed. Subsequently, the imprint template 300 is immersed in a solution of the low surface active release agent, and preferably allowed to stand in a dry environment for 4 hours, thereby modifying the surface of the imprint template 3 crucible to facilitate pressure The stamp 3 can be easily removed from the resist after the end of the stamp to form a complete resist pattern transfer. Wherein, the above low surface active releasing agent is preferably, for example, 1H, 1H, 2H, 2h-perfluorodecyl-trichlorodecane (lH, lH'2H'2H-perfluor〇decyl-trichl〇rosuane) or ten Octadecyltrichlorosilane (〇TS), in solution. For example, when the embossing template 3 is a ruthenium wafer and an octadecyltrichlorosilane solution is used, the surface of the ruthenium wafer can be modified to be self-assembled by the octadecane 1263870-based three-gas sinter. The monolayer, that is, the functional group based on the surface of the sheet is converted from a hydroxyl group (-_ to a functional group of a trifluoromethyl(fluorene) fluorenyl group (_cH3). After the release of the surface of the imprint template 300 is completed, The imprint template 300 is immersed in the thermally stable polymer solution. At the same time, the ultrasonic shock is preferably used for, for example, an ultrasonic shock absorber for 2 minutes, whereby the microstructure of the pattern 302 on the imprint template 300 is used. The bubble is removed, and the thermally stable polymer can be surely filled in the recessed area of 3〇2, and the thermally stable polymer film 3〇4 is formed to fill the pattern 302 on the surface of the stamping template 300. After the formation of the 瘥 瘥 1 1 1 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲 疋鬲In the thermally stable polymer film 304 As shown in Fig. 8, the orbital shifting south molecular polymer film 3〇4 and the thermally stable polymer film 3〇6 constitute a thermally stable polymer stack layer, wherein the above-mentioned teaching stabilizes high tr polymer The solution is preferably a chlorobenzene solution of a thermally stable polymer 0 heat = a toluene solution of a polymer. In the present invention, a thermally stable 冋 knife 4 film _ and a thermally stable polymer film 306 are: The material may preferably be a dry-type polymer material or a low heat-shrinkable two-substrate material which is resistant to reactive ion energy such as _ / = RIE. In a preferred embodiment of the present invention, the heat stable high score "Do not film 304 and the thermally stable polymer film 3 is polymethyl methacrylate, /, u material can be ^ ^ [poJy (methyl Methyacrylate), polystyrene (Ps) or polycarbonate (PC), wherein the molecular weight of polymethylpropane I263870 is preferably 7 〇〇〇〇. Forming a thermally stable polymer film 3〇 6 The speed of coating is controlled at 1000 rpm (four), and:: will be strictly turned to the second. After spin coating to form a heat release, the male 仃 30, ^ ^ % 疋 刀 knife polymer film 306, ^ P row: baking treatment 'to remove the residual solution. Here, it is preferred: 'After each spin coating, the baking treatment is preferably performed at a temperature of 1 〇 5. Bake for 5 minutes. ^ Preferred embodiment [multiple spin coating concentration is about (10); A: =: = benzene solution to make the formed thermally stable polymer poly: ^ 306 surface is better flat ' Further, the thermally stable polymer can be composed of 6 mainly composed of a polymethyl methacrylate with a small shrinkage ratio, and a thermally stable polymer film 3 ( After the formation of the film 4G with the hot 敎 high score ^Do not film 3G6, the photoresist layer is formed by a spin coating technique, for example, by using a spin coating technique. The photoresist layer 3 〇 8 can be a hardened prepolymer. Layer (PhQtc) eurable 〇Ug.· U(4), the material of the barrier layer 3G8 is preferably a low-viscosity photoresist to improve the uniformity of the coating of the photoresist layer. The low-viscosity photoresist includes at least Agents, monomers and prepolymers. In a preferred embodiment of the invention: the photoresist comprises: a photoinitiator, an approx. <prepolymer' When 40% of the bifunctional base is used in the photoresist layer 308, it can be rotated in two stages. The soil is first transferred at a speed of 1000 rPm for τ seconds, so that the photoresist can be filled with thermally stable polymer. Film 306, and fill in the heat stable high 12 1263870, " the film on the 3〇6 unevenness. Then at 4 (8) rpm rpm for 3 〇 seconds, so that the photoresist is thermally stable polymer The thin film 3 06 ^^1/, a uniform thin layer, so that the surface of the photoresist layer 3 〇 8 can be made more flat. ^ After the photoresist layer 308 is formed, The substrate 31 is applied to the photoresist layer 3 to form a structure as shown in Fig. 9, wherein the substrate 3 10 can be, for example, a twinned conductor substrate, a conductive glass, a printed circuit board or a transparent eve. In the present invention, the material of the substrate 31 is preferably transparent, and the substrate, preferably 10, is flexible. In a preferred embodiment of the invention, the substrate 3 1 is made of indium tin oxide ( The stacked structure of the ITO) layer and the polyester (PET) layer is in contact with the indium tin oxide layer and the photoresist layer 3〇8. Next, referring to FIG. 10, the light 312 is irradiated on the substrate 310 at a distance f, whereby the photoresist of the photoresist layer 308 is completely polymerized. Among them, ",,, and the day of the shoot is better to last about 3 sec. The light 3 1 2 is not limited to a deep ultraviolet region or a near ultraviolet region as long as it contains an ultraviolet region, and the light 3D does not need to be a single wavelength. Then, the imprint template 300 and the material layer thereon may be turned over so that the imprint template 300 is positioned above the thermally stable polymer film 3〇4. Further, the imprint template 3 is separated from the thermally stable polymer film 304, and the imprint template 3 is removed. In this way, a pattern 314 complementary to the pattern 302 of the original imprint template 300 can be formed on the surface of the thermally stable polymer film 3〇4 above the substrate 310, as shown in FIG. One of the features of the present invention is that since the thermostable polymer polymerization 13 port 63870/specific film 300 is not heated to above its glass transition temperature, pattern imprinting can be performed at a low temperature, and thus it can be applied to less resistant. High temperature flexible substrate. Further, the formation of the pattern 314 on the surface of the thermally stable polymer film 3〇4 does not require the use of a downforce, so that the present invention has a low operating pressure, and a soft and hard template can be used for pattern imprinting.

After the embossing is completed and a pattern 314 complementary to the pattern 3〇2 is formed over the substrate 3 10, a patterning step of the substrate 31 is performed to transfer the pattern 314 on the surface of the thermally stable polymer film 304 to The patterned substrate 3 on the substrate 3u is etched for 10 days, and the heat-stabilized polymer film 306 of the heat-stabilized polymer layer of the 分 and y is removed by, for example, dry-cutting. Until a portion of the photoresist layer is exposed, wherein the exposed region of the photoresist layer 308 is below the recessed region of the pattern 314. In a preferred embodiment of the invention, the engraved substrate is first 310 together with the 纴 纴 . 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Molecular polymer film 304 and thermally stable polymer /

Dry etching is performed. In the present invention, the use of the photoresist layer 308 of the 浔膘 、 306, ^ & 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The depth of the pattern above the substrate 31 will be an acute one, using, for example, a dry type (10), and holding the plasma-removed portion of the plasma containing the rat gas in the oxygen plasma. The resist layer, until the photoresist underneath the recessed area of the pattern 314 of the heat-stable film 304 exposes the underlying material 310ΑΙ»^^ to remove the substrate 0. Among them, the inclusion of gas-filled electric equipment 14 1263870 1=two! Except for exposure; photoresist layer 3 ° 8. The depressed area to be imaged is removed from the turbulent Ϊ 1G, and a part of i j10 is moved, for example, in a wet manner. In this way, the heat stable high score: the pattern 314 of the film is transferred to the surface of the substrate 310, and the pattern 316 is formed on the surface of the soil 310, as shown in Fig. 12. In the preferred embodiment of the present invention, the above-described wet residual is the substrate 31 together with the residual substrate 310. In the acid solution of the present invention, the imprint process of the present invention can be used to fabricate micron- or nano-scale patterns, and the imprint process of the present invention can be imprinted at high temperature. Operating at low temperatures that cannot be achieved by law. Therefore, it can be applied not only to a flexible substrate but also to a low operating pressure and to a soft and hard template, which has excellent applicability. As is apparent from the above preferred embodiment of the present invention, the embossed pattern of the present invention has better dimensional stability and good cost selectivity as compared with the low temperature imprint process. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and any skilled person skilled in the art can make various changes and modifications without departing from the scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 to Fig. 3 are cross-sectional views showing a process of conventional high temperature imprinting. 4 to 6 are cross-sectional views showing a process of conventional low temperature imprinting. 15 1263870 FIGS. 7 through 12 are cross-sectional views showing a process of imprinting in accordance with a preferred embodiment of the present invention. Brief Description of Component Representation Symbol 100: Substrate 102: Etch Barrier Layer 104: Imprint Template 108: Imprint Pattern 202: Photoresist Layer 206: Pattern 2 1 0: Imprint Pattern 302: Pattern 106: Pattern 200: Substrate 204: Imprint template 208: Light 300: Imprint template

3 04 : Thermally stable polymer film 3 06 : Thermally stable polymer film 3 1 0 : Substrate 314 : Pattern 308 : Photoresist layer 3 12 : Light 316 : Pattern

16

Claims (1)

1263870 Picking up, patent application range 1 · An imprinting process, comprising at least: providing an imprint template, wherein one surface of the imprint template has a pattern; forming a layer of thermally stable polymer covering the pressure On the surface of the printing template, wherein the thermally stable polymer layer fills the pattern of the imprint template and the thermally stable polymer layer has a surface on the surface of the imprint template Forming a complementary pattern of the pattern; forming a photocurable 预lig〇mer layer over the thermally stable polymer layer; forming a transparent substrate overlying the photohardenable prepolymer On the layer; performing an illuminating step whereby the photohardenable prepolymer layer is polymerized; and the embossing template is removed. 2. The imprint process of claim 1, wherein the material of the imprint template is selected from the group consisting of glass, quartz, germanium wafers, and rubber. 3. The imprint process of claim i, wherein the step of providing the imprint template and the step of forming the thermally stable polymer layer further comprises at least the surface of the imprint template - Demoulding treatment. 17 1263870 The release process described in item 3 of the scope of the application, the direct and medium mold treatment includes at least: 〃 an absolute wine bubble step; a first immersion step is performed on the imprint template by a first immersion solution, wherein during the first y 're-bubble step and the second immersing step, the illumination is simultaneously oscillated Processing; performing the drying step on the imprint template; and operating on a low surface... ^^ raw release agent to the imprint template for a third soaking of the ultrasonic wave 6: at the ==: item of the imprint process 'where dry step 7 war two m" 4 said imprint process 'Where the dry. ^ The patented yoke of the fourth aspect of the embossed f surface active release agent is 1H (1) light, wherein the low-grade is 1 Η, 1 Η, 2 Η, 2 Η-perfluoro fluorenyl heart is as low as the patent The imprinting process of item 4, wherein the 18 1263870, 14 release agent is octadecyltrichloromethane (OTS). The electro imprint process described in claim 4 of the patent scope, wherein the Further, the step is to leave the imprint template for 4 hours in a dry environment. 1 The printing process described in the first paragraph of the patent application, wherein the heat: ^ points + polymer layer material is resistant to reaction A polymer material having a low-heat-shrinkable polymer material, or a low-heat-shrinkable polymer material. The embossing process as described in claim 1, wherein the material of the heat % 疋南 molecular polymer layer is linearly high. Molecular material. u• The imprint process described in claim 1, wherein the thermally stable polymer The material is selected from the group consisting of poly(mercapto acrylate) (PMMA), polystyrene (ps), and polycarbonate (pc). 14. Imprinting as described in claim 1 The process, wherein the step of forming the thermal stability molecular polymer layer comprises at least: providing a thermally stable polymer solution; immersing the imprint template in the thermally stable polymer solution to form a first heat Stabilizing a polymer film to fill the pattern on the surface of the imprint template; and performing at least one spin coating step to form a second thermally stable polymer film covering the first thermally stable polymer The embossing process of the invention of claim 14, wherein the thermally stable polymer solution is a chlorobenzene solution of a thermally stable polymer. The embossing process according to Item 14, wherein the thermally stable polymer solution is a benzene solution of a thermally stable polymer. 1 7. The imprint process described in claim 14, wherein the step of forming the first thermally stable polymer film further comprises at least an ultrasonic vibration treatment. 1 8. The imprint process of claim 17, wherein the ultrasonic oscillating process is performed for 20 minutes. 19. The imprint process of claim 14, wherein the spin coating step comprises at least controlling a rotational speed of 1 revolutions per minute (rpm) and the spin coating step is performed for 30 seconds. 20. The imprint process of claim 14, wherein after the spin coating step, at least one baking treatment is performed. 2 1. The imprint process as claimed in claim 20, wherein the 20 1263870 bake treatment is based on, w & (: 5 minutes. 22 r • The imprinting process described in item 14 of the patent application section is 6%. The concentration of the solution is 6%. 23 · If the scope of patent application is 1 In the embossing process described in the section, the material of the pre-I layer is a low-viscosity photoresist. 24. The imprinting low-viscosity photoresist according to claim 23 of the patent application includes at least an initiator, Monomer and prepolymer 25. The imprint process described in claim 23, the viscosity photoresist comprises 5% photoinitiator, 5 % prepolymer, 5% monomer and 40% difunctional Monomer 26. The embossing process as described in the scope of the patent application, the step of photohardening the prepolymer layer is carried out using a spin coating technique 27 as described in the patent application 帛 2 The step of forming the photohardenable prepolymer layer comprises: performing at a first rotational speed for 10 seconds, wherein the first rotational speed is and at a second rotational speed for 30 seconds, wherein the second rotational speed is Light, wherein the > wherein the low monofunctional group forms a ruthenium therein, wherein the shape is 1 rpm 4000rpm 〇21 !26387〇28· The embossing process described in claim 1, the coffin is selected from the group consisting of a silicon wafer, a semiconductor substrate, a conductive discontinuity, a printed circuit board, and a transparent conductive plastic. The embossing process of claim 1, wherein the transparent substrate is formed by stacking a layer of indium tin oxide (yttrium) and a layer of polyester (ΡΕΤ) and the oxidation The indium tin layer is in contact with the photohardenable prepolymer layer. The embossing process of claim 1, wherein the illuminating step is performed by using a light source over the transparent substrate for 30 seconds. The light source includes at least an ultraviolet light region. The embossing process of claim 1, wherein the step of removing the embossed slab includes at least flipping the embossing template so that the embossing template is located Above the thermally stable polymer layer. 32. The imprinting process of claim 1, wherein after the step of removing the embossed slab, at least one patterning step is performed. 3 hot thrips molecular polymer The embossing process on the surface of the substrate is transferred to the transparent substrate. The embossing process of claim 32, wherein the patterning step comprises at least a 亍-^ ^ * a private Etching to remove a portion of the thermally stable polymer poly 22 1263870 mouth layer until a portion of the photohardenable prepolymer layer is exposed; a second dry etch is performed to remove the exposed photohardenable a prepolymer layer and the thermally stable polymer layer until a portion of the transparent substrate is exposed; and performing a wet etching to expose a portion of the transparent substrate to form the transparent substrate Complementary pattern. The embossing process of claim 33, wherein the first dry etching comprises at least using oxygen plasma. The embossing process of claim 33, wherein the second dry etching comprises at least an oxygen plasma and a fluorine-containing plasma. The embossing process of claim 33, wherein the 'fool etching" comprises at least an oxalic acid solution using 〇·1N. 37. The embossing process comprises at least: embossing template, wherein one surface of the embossing template has a pattern; forming a layer of thermally stable polymer covering the surface of the embossing template a layer of a thermally stable polymer layer filling the pattern of the imprint template and having a complementary pattern with respect to the pattern on the surface of the thermally stable polymer layer in contact with the surface of the imprint template; a photoresist layer is coated on the thermally stable polymer layer; 23 1263870 forms a transparent substrate over the photoresist layer; an irradiation step is performed to thereby polymerize the photoresist layer; and the imprint template is flipped And removing the imprint template to expose the complementary pattern on the surface of the thermally stable germanium molecular polymer layer; and performing a patterning step whereby the thermally stable polymer layer is on the surface The complementary pattern is transferred to the transparent substrate. 3: The embossing process of claim 37, wherein the material of the embossed ruthenium is selected from the group consisting of glass, quartz, tantalum wafers, and rubber. Stomach 39. The imprint process as described in claim 37, in the step of providing a stamping plate and the step of forming the thermally stable polymer layer, > including the imprint template The surface is subjected to a release treatment. 4. The embossing process of claim 39, wherein the demolding process comprises at least: a second aqueous solution of the imprinting template to perform a first dipping in an absolute alcohol/foaming step; W > trough liquid performs a second soaking step on the imprint template, wherein during the first -, -, - soaking step and the second soaking step, an ultrasonic shock processing is simultaneously performed; The template is subjected to a drying step of γ ^ 久 ;; and a third immersion 24 Ϊ 263870 step is performed on the imprint template with a low surface active release agent.浐 4 1 · The imprint process described in claim 40, wherein the absolute alcohol/secondary aqueous solution has a volume ratio of absolute alcohol to secondary water of 1:1. An embossing process as described in claim 4, wherein the ultrasonic oscillating process is performed for 20 minutes. 43. The imprint process of claim 4, wherein the drying step utilizes nitrogen. 44. The embossing process as described in claim 4, wherein the surface active release agent is selected from the group consisting of m, m, 2H, 2H_perfluorodecyl _3, "X and 18 A group consisting of alkyl dichloromethane. The third: 5, ^, the embossing process described in claim 40, wherein the package step is to dry the imprint template for 4 hours in a dry environment. For example, in the embossing process described in claim 37, wherein: the material of the molecular polymer layer is selected from the group consisting of high glass transition temperature materials and linear polymer materials. The embossing process as described in claim 37, wherein the material of the ruthenium molecular polymer layer is selected from the group consisting of polymethyl methacrylate 25 1263870 vinegar, polystyrene and polycarbonate. 48. The embossing process of claim 37, wherein the step of forming the thermally stable polymer layer comprises at least: providing a thermally stable polymer solution; immersing the embossing template In the thermally stable polymer solution, Forming a first-thermally stable polymer film to fill the imprint template: the pattern on the surface; and performing at least one spin coating step to form a second thermally stable polymer film covering the first The embossing process of claim 48, wherein the thermally stable polymer solution is selected from the group consisting of a chlorobenzene solution from a thermally stable polymer. And a toluene solution of a thermally stable polymer: one group. 50. The imprint process described in claim 48 of the patent scope, when the step of forming the first thermally stable polymer film is further At least one ultrasonic oscillating process is performed. 51. The embossing process as described in claim 5, wherein the ultrasonic oscillating process is performed for 2 minutes. 52. The pressure as recited in claim 48 The printing process, wherein the 26 1263870 spin coating is applied to the coating step: at least the control - the rotational speed is 1000 rpm' and the rotation is every 30 seconds. 53. The transfer coating step is as claimed. After the embossing process described in item 4, the at least one baking process is performed at least. The embossing process described in item 53 of the patent application range is at 105 ° C. Take 5 minutes. The molybdenum molybdenum patent range is the 4th item of the patent. The heat stable high 2 π A, the concentration of the knife polymer solution is 16 〇 / 〇 56 · The imprint process described in claim 37, the bean photoresist The material of the layer is a photohardening prepolymer material. 57. The imprint process described in claim 37, wherein the photoresist layer is made of a low viscosity photoresist. The embossing process of claim 57, wherein the low-drill photoresist comprises at least an initiator, a monomer, and a prepolymer. 59. The imprint process of claim 57, wherein the low viscosity photoresist comprises 5% photoinitiator, 5% prepolymer, 5% monofunctional monomer, and 40% difunctional group. monomer. 27 1263870 60. The step of applying the patent layer to the photoresist layer comprises the steps of at least the stamping process described in item 37, wherein the spin coating technique is used, and the photoresist layer is formed and The first rotational speed is performed for 10 seconds, wherein the first rotational speed is 10 and the first rotational speed is 30 seconds, wherein the second rotational speed is 4 rpm. 6 1 . The imprint process as claimed in claim 3, wherein the substrate is selected from the group consisting of a germanium wafer, a semiconductor substrate, a conductive glass, a printed circuit board, and a transparent conductive plastic. . The embossing process of claim 37, wherein the transparent substrate is formed by stacking an indium tin oxide layer and a polyester layer, and the indium tin oxide layer is in contact with the photoresist layer. 63. The embossing process of claim 37, wherein the step is to illuminate the transparent substrate with a light source for at least 30 seconds, the light source comprising at least an ultraviolet region. 64β is removed as shown in the embossing process described in claim 37. Before the step of imprinting the template, at least the flipping of the imprint template is performed such that the imprint template is positioned above the thermally stable polymer layer. 28 l26387〇ΖΓ ^ Figure 2. The imprint process described in claim 37, wherein the step of at least one comprises: a first dry etching of the human swarf to remove a portion of the thermally stable polymer Gathering the layer until a portion of the photoresist layer is exposed; a second dry etch is performed to remove the exposed photoresist layer and the layer of the polymer layer until the exposed portion a transparent substrate; and 'transparent etching to expose a portion of the transparent substrate' to form the complementary pattern on the substrate. 66. The imprint process described in the scope of claim 2, the dry button engraving includes at least the use of oxygen plasma. The middle side 67. The embossing process as described in claim 65, wherein the dry-type enrichment comprises at least the use of oxygen electropolymerization and the inclusion of electricity. 68. The subtractive characterization as described in claim 65 of the patent application includes at least the use of the oxalic acid solution of (10). 69. An embossing process, comprising at least: providing an embossing mold handle, wherein, one of the surfaces of the embossing template has a pattern for performing a mold release treatment on the side surface of the embossing template Forming a thermally stable polymer 哿-^^5 layer covering the agricultural surface of the embossing template, wherein the thermostable macro-returning polymer layer fills the embossing template 29 1263870 a pattern 'and a surface of the thermally stable polymer layer in contact with the surface of the imprint template having a complementary pattern with respect to the pattern; forming a photoresist layer overlying the thermally stable polymer Forming a transparent substrate over the photoresist layer; performing an irradiation step to thereby produce the photoresist layer. removing the imprint template to expose the thermally stable polymer V: and layer The complementary pattern on the surface. 70. The imprint process of claim 69, after the step of removing the imprint template, further comprises at least performing a patterning step by using the surface of the thermally stable polymer layer The complementary pattern transfer 30