TWI263691B - Sputtering target and method for producing the same - Google Patents
Sputtering target and method for producing the sameInfo
- Publication number
- TWI263691B TWI263691B TW92104304A TW92104304A TWI263691B TW I263691 B TWI263691 B TW I263691B TW 92104304 A TW92104304 A TW 92104304A TW 92104304 A TW92104304 A TW 92104304A TW I263691 B TWI263691 B TW I263691B
- Authority
- TW
- Taiwan
- Prior art keywords
- sputtering target
- sintered body
- sputtering
- oxide
- producing
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000005336 cracking Methods 0.000 abstract 1
- 230000008929 regeneration Effects 0.000 abstract 1
- 238000011069 regeneration method Methods 0.000 abstract 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Ceramic Products (AREA)
Abstract
A sputtering target is characterized in that the sputtering target will not form cracking, be damaged or generate abnormal discharge during sputtering, and can perform stable sputtering at a high speed, and can obtain a phase change photo recording medium with excellent recording regeneration characteristics under high productivity. The sputtering target is formed of a sintered body sintered from more than one oxide and more than one carbide. Furthermore, the sintered body contains 0.1 wt% to 20 wt% of carbon content, and has a relative density of more than 70%. Particularly, the sintered body is formed of Mo oxide and silicon carbide, and contains 0.1 wt% to 20 wt% of silicon carbide, and has a relative density of more than 70%.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002054738 | 2002-02-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200303931A TW200303931A (en) | 2003-09-16 |
| TWI263691B true TWI263691B (en) | 2006-10-11 |
Family
ID=27784598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92104304A TWI263691B (en) | 2002-02-28 | 2003-02-27 | Sputtering target and method for producing the same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN1441082A (en) |
| TW (1) | TWI263691B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5651095B2 (en) * | 2010-11-16 | 2015-01-07 | 株式会社コベルコ科研 | Oxide sintered body and sputtering target |
| JP2013047361A (en) * | 2011-08-29 | 2013-03-07 | Mitsubishi Materials Corp | Sputtering target, method for production thereof, thin film using the target, and thin film sheet and laminated sheet provided with the thin film |
| CN108655403B (en) * | 2018-06-25 | 2020-08-28 | 河南科技大学 | Preparation method of high-purity tantalum target material for electronic material |
| JP2020041217A (en) * | 2018-09-07 | 2020-03-19 | 三菱マテリアル株式会社 | Optical functional film, sputtering target, and method for manufacturing sputtering target |
-
2003
- 2003-02-27 TW TW92104304A patent/TWI263691B/en not_active IP Right Cessation
- 2003-02-27 CN CN03104948A patent/CN1441082A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW200303931A (en) | 2003-09-16 |
| CN1441082A (en) | 2003-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |