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TWI263231B - Parallel compression test circuit of memory device - Google Patents

Parallel compression test circuit of memory device

Info

Publication number
TWI263231B
TWI263231B TW093139261A TW93139261A TWI263231B TW I263231 B TWI263231 B TW I263231B TW 093139261 A TW093139261 A TW 093139261A TW 93139261 A TW93139261 A TW 93139261A TW I263231 B TWI263231 B TW I263231B
Authority
TW
Taiwan
Prior art keywords
compression test
parallel compression
test circuit
memory device
input
Prior art date
Application number
TW093139261A
Other languages
English (en)
Other versions
TW200615976A (en
Inventor
Taek-Seung Kim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200615976A publication Critical patent/TW200615976A/zh
Application granted granted Critical
Publication of TWI263231B publication Critical patent/TWI263231B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31917—Stimuli generation or application of test patterns to the device under test [DUT]
    • G01R31/31919—Storing and outputting test patterns
    • G01R31/31921—Storing and outputting test patterns using compression techniques, e.g. patterns sequencer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/40—Response verification devices using compression techniques
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G11C2029/2602—Concurrent test

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW093139261A 2004-11-15 2004-12-17 Parallel compression test circuit of memory device TWI263231B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040093222A KR100694418B1 (ko) 2004-11-15 2004-11-15 메모리 장치의 병렬 압축 테스트 회로

Publications (2)

Publication Number Publication Date
TW200615976A TW200615976A (en) 2006-05-16
TWI263231B true TWI263231B (en) 2006-10-01

Family

ID=36575792

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093139261A TWI263231B (en) 2004-11-15 2004-12-17 Parallel compression test circuit of memory device

Country Status (3)

Country Link
US (1) US7187195B2 (zh)
KR (1) KR100694418B1 (zh)
TW (1) TWI263231B (zh)

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CN102110479A (zh) * 2009-12-28 2011-06-29 海力士半导体有限公司 包括数据压缩测试电路的半导体存储装置

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CN102110479B (zh) * 2009-12-28 2015-01-28 海力士半导体有限公司 包括数据压缩测试电路的半导体存储装置

Also Published As

Publication number Publication date
KR20060054611A (ko) 2006-05-23
TW200615976A (en) 2006-05-16
US20060123291A1 (en) 2006-06-08
KR100694418B1 (ko) 2007-03-12
US7187195B2 (en) 2007-03-06

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